TW202129741A - Cooling apparatus, cooling method and method for manufacturing semiconductor package - Google Patents

Abstract

The subject of the present invention is to provide a cooling technique for quickly and evenly reducing the temperature of a heated rectangular substrate and a method for manufacturing semiconductor package in high quality. The solution of the present invention provides a cooling apparatus, which comprises: a cooling plate for cooling a substrate from lower side that has been positioned at a cooling position; a lifting mechanism, which may move the substrate up and down in the vertical direction with respect to the cooling plate between a standby position higher than the cooling position and the cooling position; and, a correction mechanism having a correction member, wherein the correction member may be abutted against the upper side of the periphery of the substrate. The correction member may position the correction member at the cooling position near the four edges of the substrate that has been positioned at the cooling position, so as to correct the periphery of the substrate to the cooling position and control the posture of the substrate.

Description

Cooling device, cooling method, and manufacturing method of semiconductor package

The present invention relates to a cooling device and a cooling method for cooling a rectangular substrate, and a manufacturing method for manufacturing a semiconductor package using the above-mentioned substrate.

In recent years, in the field of semiconductor devices, the demand for smaller and thinner devices has been increasing. In order to meet this demand, attention has been paid to fan-out panel-level packaging (FOPLP), which uses rectangular substrates to manufacture semiconductor packages. In order to use the FOPLP technology to manufacture semiconductor packages, for example, it has been proposed to advantageously use the substrate processing apparatus described in Japanese Patent Laid-Open No. 2019-36654.

In the device described in Japanese Patent Laid-Open No. 2019-36654, as a part of the manufacturing of semiconductor packages, the following exposure step is performed before the exposure and development step is performed on the substrate. In the pre-exposure step, a photosensitive treatment liquid is coated on the surface of the substrate by the coating part. Then, the solvent of the treatment liquid coated on the surface of the substrate is evaporated by the reduced pressure by the reduced-pressure drying section, and the substrate is dried under reduced pressure. In addition, the substrate subjected to the reduced-pressure drying treatment is heat-processed by the pre-baking section. Thereby, the treatment liquid on the surface of the substrate is cured to form a cured film. Then, the substrate is transferred from the pre-baking part to the exposure part, even if the substrate is waiting for a certain period of time on the transfer stage, and the natural heat dissipation (air cooling) in the standby is used to cool the temperature of the substrate to a suitable temperature by The temperature at which the exposure unit performs the exposure step (hereinafter referred to as "first temperature").

In the FOPLP technology, the substrate has a rectangular shape and is made larger. In addition, during the manufacturing of the semiconductor package, a plurality of layers are laminated on the top of the substrate. Due to these factors, there is a tendency for the warpage of the substrate to become larger in the above-mentioned pre-exposure step. In addition, in semiconductor packaging, the cured film often contains a resin material, and a plurality of layers are arranged to be laminated on the top of the substrate. Therefore, there is a tendency that the heat capacity of the substrate on which the cured film is laminated and formed becomes large. As a result, it takes time for the substrate to cool down on the transfer table, and so-called overbake in which excessive heat is applied to the cured film may be generated. Due to these factors, it is difficult to form a cured film with good film quality on the substrate, and it is difficult to form a good pattern shape and a uniform pattern size in the plane through the exposure and development steps of the cured film. This point has become a major factor hindering the manufacture of high-quality semiconductor packages using FOPLP technology.

In view of this, the present invention was accomplished in view of the above-mentioned problems, and its purpose is to provide a cooling technology that can uniformly cool a heat-treated rectangular substrate in a short time, and can manufacture high-quality semiconductor packages. The manufacturing method of the semiconductor package.

The first aspect of the present invention is a cooling device for cooling a rectangular substrate; it is characterized in that it is provided with: a cooling plate that cools the substrate positioned at the cooling position from below; and a lifting mechanism that is positioned vertically The base plate is raised and lowered relative to the cooling plate between the standby position higher than the cooling position and the cooling position; By positioning the correction member at the cooling position near the four sides of the substrate positioned at the cooling position, the peripheral edge of the substrate is corrected at the cooling position to control the posture of the substrate.

In addition, the second aspect of the present invention is characterized in that it has the following steps: a step of positioning the rectangular substrate at a predetermined cooling position relative to the cooling plate; The step of lowering the upper correction member from a position higher than the cooling position toward the substrate positioned at the cooling position, and positioning the correction member at the cooling position near the four sides of the substrate, and correcting the peripheral edge of the substrate at the cooling position; and The step of cooling the substrate by the cooling plate while maintaining the positioning of the correction member at the cooling position.

In addition, a third aspect of the present invention is provided with an exposure and development step of exposing and developing the cured film formed on the substrate adjusted to the first temperature, and forming and curing on the substrate before the exposure and development step The method for manufacturing a semiconductor package in the pre-exposure step of the film is characterized in that the pre-exposure step has: a coating step, which coats the treatment liquid containing the material constituting the cured film on the top of the substrate; and the heating step, which coats the substrate. The substrate with the treatment liquid is heated to a second temperature higher than the first temperature to form a solidified film; and a cooling step of positioning the substrate with the solidified film above the cooling plate to cool the substrate to the first temperature.

As described above, according to the present invention, the heat-treated rectangular substrate can be cooled uniformly in a short time. In addition, since the pre-exposure step included in the manufacturing method of the semiconductor package includes a cooling step, the semiconductor package can be manufactured with high quality. The cooling step positions the substrate above the cooling plate to cool the substrate.

A substrate processing apparatus equipped with a cooling unit, which is an example of the cooling device of the present invention, is a part of the manufacturing of semiconductor packages and performs a pre-exposure step before the substrate is exposed and developed. In particular, the substrate processing apparatus has the following technical features as detailed later: in the final stage of the pre-exposure step, the substrate is cooled by a cooling unit with a correction function. Hereinafter, after describing the overall configuration and outline operation of the substrate processing apparatus, the configuration and operation of the cooling section will be described in detail.

Fig. 1 is a plan view showing the overall configuration of a substrate processing apparatus equipped with a first embodiment of the cooling device of the present invention. In addition, FIG. 2 is a block diagram showing the electrical configuration of the substrate processing apparatus shown in FIG. 1. The substrate processing apparatus 1 includes an indexing unit 2, a coating unit 3, a reduced-pressure drying unit 4, a heating unit 5, a cooling device 100 that functions as a cooling unit 6, a conveying unit 7, and a control unit 8. In order to uniformly display the directions in the following figures, as shown in Figure 1, set the XYZ orthogonal coordinate axes. Among them, the XY plane shows the horizontal plane. In addition, the Z axis shows the vertical axis, and more specifically, the (-Z) direction shows the vertical downward direction.

The indexing part 2 is provided with an indexing robot arm 2A and a transfer table 2B. In addition, the side surface on the (-X) side of the index portion 2 is capable of mounting one or more storage boxes C, and the storage boxes C contain a plurality of rectangular-shaped substrates S used in the manufacture of semiconductor packages. The index robot 2A takes out the unprocessed substrates S stored in the storage box C one by one and places them on the transfer table 2B. In addition, as the pre-exposure step, the coating process performed by the coating section 3, the reduced pressure drying process performed by the reduced pressure drying section 4, the heating process performed by the heating section 5, and After the cooling process performed by the cooling unit 6, the substrate S placed on the transfer table 2B is stored in the storage box C. As shown by the arrow in the figure, the indexing robot arm 2A can move in the Y direction for accessing to each storage box C.

In the substrate processing apparatus 1, a stack in which the heating unit 5 is stacked and arranged above the cooling unit 6 is provided. In addition, as shown in FIG. 1, the stack, the conveying unit 7 and the reduced-pressure drying unit 4 are arranged side by side in the Y direction on the (+X) side of the transfer table 2B. In addition, the coating section 3 is arranged on the (+X) side of the conveying section 7. That is, the transfer table 2B, the stack (=heating part 5+cooling part 6), the coating part 3, and the reduced-pressure drying part 4 are arranged so as to surround the conveying part 7. Furthermore, when the pre-exposure step does not need to include the reduced-pressure drying process, the substrate processing apparatus 1 that is not equipped with the reduced-pressure drying unit 4 may also be used.

The control unit 8 in charge of the operation of the substrate processing apparatus 1 includes a CPU (Central Processing Unit) 81 that executes a control program prepared in advance. Each part of the above-mentioned substrate processing apparatus 1 operates according to a control program executed by the CPU 81. The control unit 8 is further provided with a memory 82, a memory 83, an interface 84, etc., wherein the memory 82 is for long-term storage of the control program to be executed by the CPU 81, various setting data, etc., and the memory 83 is temporarily stored in the CPU 81 for execution The data required in the control program, the interface 84 is used to exchange information between external devices and operators. Each of these components can be set to be roughly the same as the hardware of ordinary personal computers. That is, by preparing an appropriate control program, a personal computer having a well-known configuration can be used as the control unit 8. Then, the control unit 8 configured in this way controls each unit of the device in the following manner according to the control program to execute the pre-exposure step.

FIG. 3 is a flow chart showing the pre-exposure step performed by the substrate processing apparatus, and illustrates the specific content of the pre-exposure step when focusing on one substrate. In addition, in this figure, the pre-exposure step in the substrate processing apparatus 1 shown in FIG. 1 is compared with the pre-exposure step in the prior art. In the substrate processing apparatus 1, as shown in the flowchart on the left side of the figure, a piece of unprocessed substrate S is taken out from the containing box C and transferred to the transfer table 2B (step S1). The substrate S on the transfer table 2B is conveyed by the conveying section 7 in the order of the coating section 3, the reduced-pressure drying section 4, the heating section 5, and the cooling section 6, and the following processes are performed in each section. That is, in the coating section 3, a photosensitive resist solution (hereinafter, simply referred to as a resist solution) having photosensitivity is applied to the surface of the substrate S (step S2: coating treatment). In the reduced-pressure drying section 4, the solvent of the photoresist liquid coated on the surface of the substrate S is evaporated by reducing the pressure (step S3: reduced-pressure drying treatment). In the heating section 5, the substrate S subjected to the reduced-pressure drying process is heated to cure the photoresist component on the surface of the substrate S (step S4: heating process). Thereby, a cured film of the treatment liquid, that is, a photoresist film, is formed on the surface of the substrate S. At this stage, since the temperature of the substrate S (hereinafter referred to as the "second temperature") is higher than the first temperature suitable for the exposure step performed by the exposure section, the substrate S is cooled by the cooling section 6 to lower the temperature to The first temperature (step S5: cooling process). In this way, the substrate S having the photoresist film and having reached the first temperature is transferred from the cooling part 6 to the transfer table 2B by the conveying part 7 (step S6), and is stored in the storage box C by the index robot 2A (Step S7).

On the other hand, in the prior art, as shown in the flowchart on the right side of the figure, steps S1 to S4 are performed in the same way as the present invention to form a photoresist film as a cured film on the unprocessed substrate S, but it is accepted The heat-treated substrate S is directly transferred to the transfer table 2B by the transfer unit 7 (step S6). Then, the substrate S stands by on the transfer table 2B, is cooled to the first temperature by natural heat dissipation, so-called air cooling (step S8: air cooling process), and is stored in the storage box C by the indexing robot 2A (Step S7).

In this way, in this embodiment, in the pre-exposure step performed as one of the rings in the manufacture of the semiconductor package, instead of the previous air cooling process (step S8), cooling is performed by the cooling section 6 described below. Processing (step S5). Hereinafter, the configuration and operation of the cooling device 100 functioning as the cooling unit 6 and the technical significance of the cooling process performed in the pre-exposure step will be described.

Fig. 4 is a diagram showing the first embodiment of the cooling device of the present invention. In addition, FIG. 5 is a cross-sectional view taken along the line A-A in FIG. 4. As shown in FIG. 4, the cooling device 100 is provided with the chamber 10 which accommodates the board|substrate S. As shown in FIG. The chamber 10 has a box-shaped structure in which a top plate 11, a side plate 12, a bottom plate 13, and a gate 14 are combined.

The gate 14 is openably and closably attached to an opening 15 provided on one side of the chamber 10, and is pressed against the side of the chamber 10 via a gasket (not shown) in the closed state, thereby closing the opening 15. On the other hand, in the open state of the gate 14 shown by the dotted line in FIG. 4, the substrate S can be exchanged with the outside through the opened opening 15. That is, the substrate S held by the conveying part 7 (FIG. 1) is carried into the chamber 10 through the opening 15. In addition, the cooling-processed substrate S in the chamber 10 is transported to the outside by the transport unit 7.

A cooling plate 20 is provided at the bottom of the chamber 10. A plurality of recesses (not shown) are provided on the upper surface of the cooling plate 20, and a spherical body 21 with a depth slightly larger than the diameter of the recess is fitted into each recess. The top of the spheres 21 can be used to support the substrate S from below, and the substrate S carried in from the outside is placed on the sphere 21 such that the surface on which the photoresist film is formed faces upward. In this way, the substrate S is positioned in a state in which a minute space called a proximity gap is formed on the upper surface of the self-cooling plate 20. In this specification, the position of the substrate S positioned and subjected to cooling treatment (in this specification, the height position of the upper surface of the substrate S in the vertical direction Z) is referred to as the "cooling position".

As shown in FIG. 4, in order to perform cooling treatment on the substrate S positioned at the cooling position (symbol P1 in FIGS. 8A to 8D and 9A to 9D), a cooling medium such as cooling water is formed inside the cooling plate 20 The flow path 22 of the flow. Then, in response to a cooling command from the control unit 8, the refrigerant supply unit 23 supplies the refrigerant to one end of the flow path 22. In addition, the refrigerant discharged from the other end of the flow path 22 returns to the refrigerant supply part 23. The cooling plate 20 is cooled by the circulating supply of such a refrigerant, and the radiant heat from the substrate S positioned at the cooling position P1 is effectively absorbed to cool the substrate S. Therefore, the substrate S can be cooled down faster than the air cooling process on the transfer table. In addition, as a specific structure of the cooling plate 20, another structure other than the supply of refrigerant, such as a Peltier element, can be used. In addition, the number and positions of the spheres 21 can be appropriately set according to the plane size of the substrate S and the like.

In order to smoothly transfer the substrate S between the cooling plate 20 and the conveying section 7 (FIG. 1 ), the cooling device 100 is provided with an elevating mechanism 30. Specifically, the bottom plate 13 and the cooling plate 20 of the chamber 10 are provided with a plurality of through holes 31 extending in the vertical direction Z, and the lift pins 32 are respectively inserted through the through holes 31 thereof. The lower end of each lift pin 32 is fixed to the lift member 33. The elevating member 33 is supported by the elevating pin drive portion 34 so as to be freely raised and lowered in the up-and-down direction. The lift pin drive unit 34 operates in response to a lift command from the control unit 8 to lift the lift member 33 up and down. Thereby, each lifting pin 32 is lifted and lowered integrally, and the lifting pin 32 moves between an upper position where the upper end thereof protrudes above the sphere 21 of the cooling plate 20 and a lower position where the upper end is retracted from the sphere 21 to the lower side.

FIG. 4 shows a state in which the lift pin is located in the lower position. In this state, the upper end of the lift pin 32 is separated from the base plate S. As shown in FIG. Therefore, the substrate S is supported by the ball 21 from below to form a proximity gap. In this way, the substrate S is positioned at the cooling position P1. On the other hand, when the lift pin 32 rises, the upper end of the lift pin 32 abuts against the bottom surface of the substrate S to push the substrate S up. Thereby, by positioning the substrate S at the standby position (the position of the broken line in the figure) separated upward from the cooling position P1, the substrate S can be transferred by the conveying unit 7. On the other hand, when the lift pin 32 that does not support the substrate S rises to the upper position, the substrate S before the cooling process can be transported to the standby position by the transport unit 7. In this way, the substrate S becomes transferable between the conveying unit 7 and the cooling device 100.

In this embodiment, a correction mechanism 40 is provided, and the cooling process of the substrate S is uniformly performed in order to correct the warpage of the substrate S. Specifically, the four corner portions of the cooling plate 20 are provided with through holes 41 along the vertical direction Z. In addition, corresponding to the four through holes 41, the bottom plate 13 of the chamber 10 is also provided with through holes 42 along the vertical direction Z. At each corner of the cooling plate 20, the through holes 41 and 42 are inserted through the lifting columns 43. A connecting piece 44 is installed at the upper end of each lifting column 43. In addition, the frame-shaped (or frame-shaped) support portion 45 is supported above the cooling plate 20 via the four connecting members 44. On the other hand, the lower end of each lifting column 43 is fixed to the lifting member 46. The elevating member 46 is supported by the elevating column driving portion 47 so as to be lifted and lowered in the vertical direction. The elevating column drive unit 47 operates in response to an elevating command from the control unit 8 to raise and lower the elevating member 46. Thereby, each lifting column 43 is raised and lowered integrally, and the support part 45 is moved in the vertical direction Z. As shown in FIG.

The supporting portion 45 is arranged so as to face the entire peripheral portion Sa of the upper surface of the substrate S from the upper surface of the substrate S to be cooled by the cooling plate 20. That is, the lower surface 451 (FIG. 6) of the support portion 45 is opposed to the entire circumference of the peripheral portion Sa. In addition, a plurality of correction pins 48 are vertically provided on the lower surface 451 of the self-supporting portion 45 toward the vertical downward direction.

Fig. 6 is a diagram for explaining the attachment of the correction pin to the support part. A plurality of (16 in this embodiment, as shown in FIG. 5) through holes 452 are bored in the support portion 45, and the correction pins 48 are detachably installed with respect to each through hole 452. More specifically, as shown in FIG. 6, the lower end 481 of the correction pin 48 is extended vertically downward with a small front end. On the other hand, the upper end portion 482 of the correction pin 48 is processed to a thickness of the through hole 452 that can be inserted and removed, and the outer peripheral surface thereof is tapped with a male thread. In addition, the correction pin 48 is fixed to the support part 45 using two nuts 483 and 484 in a state where the lower end part 481 protrudes vertically downward from the support part 45. That is, in a state where the lower nut 483 is screwed to the upper end 482 of the correcting pin 48, the upper end 482 of the correcting pin 48 is inserted into the through hole 452 to protrude from the upper surface of the support portion 45, and then The upper nut 484 is installed on the protruding part, and the lower nut 483 and the upper nut 484 are clamped into the support part 45, so that the correction pin 48 is supported on the support part 45. In this embodiment, since the correcting pin 48 is configured as described above, by adjusting the screwing positions of the lower nut 483 and the upper nut 484 with respect to the upper end 482 of the correcting pin 48, it is possible to accurately adjust The sag amount DR of the lower end 481 of the support portion 45 with respect to the support portion 45. For example, when the amount of warpage of the substrate S is large, it is preferable to adjust so that the amount of sag is also large.

Furthermore, in FIGS. 4 and 5, correction pins 48 are installed in all 16 through holes 452 as the "correction member" of the present invention, and the 16 correction pins 48 are mounted on the support portion 45 The four corner correction pins 48a correspond to the "corner pins" of the present invention. In addition, for example, instead of attaching the correction pins 48 to all the through holes 452, the correction pins 48 may be alternately installed.

When the vertical movement command is issued from the control unit 8 in a state where the correction pin 48 is attached to the support portion 45 in this manner, the elevating member 46 moves up and down in the Z direction to move the correction pin 48 in the vertical direction together. Thereby, the warpage of the substrate S can be corrected.

In addition, in the cooling device 100, an exhaust mechanism 50 is provided in order to correct and control the warpage of the central portion of the substrate S which is difficult to be corrected by the correction pin 48. Specifically, as shown in FIG. 4, the bottom plate 13 and the cooling plate 20 of the chamber 10 are provided with a plurality of through holes 51 extending in the vertical direction Z. In this embodiment, the through-holes 51 are arranged such that the upper end openings are located directly below the center portion of the lower surface of the substrate S positioned at the cooling position P1. In addition, a suction portion 52 is openly connected to the lower end of each through hole 51. Therefore, when the suction unit 52 operates in response to the exhaust command from the control unit 8, the air flows from the space SP sandwiched between the center of the bottom surface of the substrate S at the cooling position P1 and the top surface of the cooling plate 20 (FIGS. 8C, 9A). Etc.) It is discharged through the through hole 51. Thereby, a negative pressure is applied to the substrate S from the side of the cooling plate 20, and during the cooling process of the substrate S, the central portion of the substrate S is restricted from warping upwards beyond the cooling position P1, so as to control the substrate S cooled by the cooling plate 20 posture. That is, the exhaust mechanism 50 is composed of the through hole 51 and the suction portion 52, and serves as an auxiliary correction function of the substrate S.

Next, referring to FIGS. 7, 8A to 8D, and 9A to 9D, the cooling process performed by the cooling device 100 will be described. Furthermore, the warped shape of the substrate S subjected to the heat treatment (step S4) has two types of concave shape and convex shape. Therefore, the cooling process performed by the cooling device 100 will be described below with reference to FIG. 7, and the correction of the substrate S warped into a concave shape will be appropriately described with reference to FIGS. 8A to 8D, and with reference to FIGS. 9A to 9D The correction of the substrate S warped in a convex shape will be described.

FIG. 7 is a flowchart showing the cooling action performed by the cooling device shown in FIG. 4. In addition, FIGS. 8A to 8D are diagrams schematically showing the main steps of the cooling action on the substrate that is warped into a concave shape. In addition, FIGS. 9A to 9D are diagrams schematically showing the main steps of the cooling action on the substrate that is warped into a convex shape. This cooling process is realized by the control unit 8 executing the above-mentioned control program and causing each part of the device to perform predetermined actions. First, each part of the cooling device 100 is initialized to an initial state for receiving the substrate S. In the initial state, the shutter 14 is closed, and the refrigerant is circulated and supplied by the refrigerant supply part 23 to prepare for cooling by the cooling plate 20. After the cooling preparation is completed, the substrate S is carried into the chamber 10. That is, at the point when the substrate is loaded in, the lift pin 32 is positioned at the upper position, and the correction pin 48 is positioned at a position much higher than the lift pin 32 (retracted position). Then, by opening the shutter 14, the substrate S can be carried in from the outside. In this state, the substrate S is carried into the chamber 10 by the conveying part 7 (FIG. 1 ), and the substrate S is transferred from the conveying part 7 to the lift pins 32 (step S51).

In this way, the substrate S before the cooling process is at the standby position while being supported by the lift pins 32 while waiting for the start of the cooling process. When the shutter 14 is closed after the conveying unit 7 is retracted, the lift pins 32 are lowered by a predetermined distance, and the substrate S is positioned at the cooling position P1 (step S52). In this way, the substrate S is disposed close to the cooling plate 20, and the cooling process of the substrate S is started by the cooling plate 20. In addition, as shown in FIGS. 8A and 9A, the suction part 52 operates in synchronization with the start of the lowering of the lift pin 32, and is clamped from the center part of the bottom of the substrate S at the cooling position P1 and the space SP above the cooling plate 20 The exhaust is started (step S53). Furthermore, in the present embodiment, although the start of the exhaust is linked to the lowering of the lift pin 32, the exhaust may be started before the substrate S descends to the cooling position P1 or after it is positioned at the cooling position P1.

After the substrate S is positioned at the cooling position P1, the support portion 45 moves vertically downward, and the correction pin 48 descends toward the peripheral edge Sa of the upper surface of the substrate S positioned at the cooling position P1. Then, as shown in FIGS. 8B and 9B, when the front end of the lower end 481 of the correction pin 48 is located at the cooling position P1, the lowering of the correction pin 48 is stopped (step S54). Then, the correction pin 48 positioned at the cooling position restricts the displacement of the substrate S during the cooling of the substrate S, and controls the posture of the substrate S. This is because the substrate S rarely has a flat posture in the horizontal direction before and during cooling, and the substrate S is often partially warped into a concave or convex shape. For example, at the point when the correction pin 48 starts to fall, the substrate S is warped into a concave shape (or also referred to as a "valley shape") as shown in FIG. . In this case, the peripheral edge portion Sa is pressed vertically downward by the lower end 481 of the correction pin 48 during the movement of the correction pin 48. As a result, as shown in FIG. 8B, the peripheral edge portion Sa of the substrate S is positioned at the cooling position P1. In this way, the warpage is corrected by the correction pin 48. On the other hand, at the point when the correction pin 48 starts to fall, the substrate S is warped into a convex shape (or also referred to as "peak shape") as shown in FIG. 9A, that is, the peripheral portion Sa of the substrate S is warped downward In this case, the correction pin 48 is positioned at the cooling position P1 without contacting the peripheral edge portion Sa of the substrate S.

While the front end of the lower end 481 of the correction pin 48 is positioned at the cooling position P1 while the cooling plate 20 is being cooled by the cooling plate 20, the substrate S is cooled and shrunk, but the lower and upper sides of the substrate S are There is a time difference in shrinkage. More specifically, as shown in FIGS. 8C and 9C, the lower side area of the substrate S is cooled and shrunk earlier than the upper side area of the substrate S. In addition, in FIGS. 8C and 9C, in order to visually display the temperature of each part of the substrate, dots are added to the cooled area, and on the other hand, hatching is added to the uncooled area.

In this way, due to the difference in the cooling progress between the lower surface area and the upper surface area of the substrate S, the central portion of the substrate S may be warped upward. Although the amount of warpage is different in accordance with the set temperature during the heat treatment, that is, the value of the second temperature, the structure of the substrate S, etc., as the amount of warpage increases, the time required to cool the center of the substrate S becomes longer . However, in this embodiment, since the exhaust gas from the space SP sandwiched between the center of the lower surface of the substrate S and the upper surface of the cooling plate 20 is continuously performed during the cooling process, the substrate can be vented from the cooling plate 20 side. Negative pressure is applied to the central part of S to suppress the upward warping of the central part of the substrate S. As a result, as shown in FIGS. 8D and 9D, while correcting the substrate S to a flat posture, the entire substrate S is cooled to the first temperature. In this manner, in this embodiment, the posture of the substrate S under cooling is controlled based on the combination of the correction performed by the correction pin 48 positioned at the cooling position and the correction performed by the exhaust mechanism 50.

When the temperature of the entire substrate S is lowered to the first temperature, it is judged as "Yes" in step S55, so the exhaust by the suction part 52 is stopped, and the correction pin 48 is positioned at a relatively standby position (substrate The position above the transfer position of S), that is, the above-mentioned retreat position (step S56). Then, the substrate S is unloaded to the outside (step S57). That is, the substrate S is separated from the cooling plate 20 by the lift pin 32 ascending, the gate 14 is opened to allow the conveying section 7 to enter, and the substrate S is transferred from the lift pin 32 to the conveying section 7 to be carried out.

As described above, according to the present embodiment, the correction pin 48 is provided to abut the peripheral portion Sa of the upper surface of the substrate S. Then, in the cooling process, the correction pins 48 are positioned at the cooling position near the four sides of the substrate S positioned at the cooling position P1. Therefore, even if the entire peripheral portion Sa or a part of the substrate S has been warped before the cooling process, it can be corrected at the cooling position P1 by abutting against the correction pin 48. In addition, even if the peripheral edge portion of the substrate S is to be warped upward beyond the cooling position P1 during the cooling of the substrate S, the warpage can be restricted by the contact with the correction pin 48. In addition, even if the center portion of the substrate S is to be warped upward due to the different cooling progress in the substrate S, the warpage can be suppressed by the exhaust from the space SP, and the cooling process can be performed in a flatter substrate posture. As a result, the cooling process can be performed uniformly in the surface of the substrate S.

In addition, by using the aforementioned cooling device 100 to cool the substrate S in the pre-exposure step, so-called over-baking in which excessive heat is applied to the photoresist film can be prevented, and a high-quality photoresist film can be obtained. That is, compared with the prior art, the pre-exposure step can be performed in a short time and with high quality.

In order to verify this effect, prepare a glass substrate of length 510×width 510×thickness 1.1mm with a photoresist film formed on the surface, heat the glass substrate to 110°C as an example of the second temperature, and place it directly on the transfer table 2B Naturally dissipate heat on the top. Then, the time required for the temperature of the central part and the peripheral part of the glass substrate to drop to the first temperature (here, 40°C) was measured. In addition, the uniformity of the film quality of the photoresist film formed on the cooled glass substrate was observed. The measurement and observation results are shown in the column "Air cooling at the transfer station" in Table 1 below. That is, the time required for cooling of the central part and the peripheral part of the glass substrate is "600 seconds". In addition, the film quality of the photoresist film after cooling is not uniform, which is not suitable for the manufacture of semiconductor packages. That is, after the exposure and development steps of the photoresist film, it is difficult to form a good pattern shape and to form a uniform pattern size in the surface.

第一實施形態之冷卻部 80 80 ◎ 第二實施形態之冷卻部 160 80 ○ 冷卻板 180 80 △ [Table 1] Cooling method Cooling time (seconds) Uniformity of membrane quality Central part Peripheral Air cooling at the transfer table 600 600

Cooling part of the first embodiment 80 80 ◎ Cooling part of the second embodiment 160 80 ○ Cooling plate 180 80 △

In contrast, when the temperature of the glass substrate is lowered from the second temperature (110°C) to the first temperature (40°C) using the cooling device 100 shown in FIG. As shown in the column of "Cooling Device", the time required to cool the central part and peripheral part of the glass substrate is "80 seconds". In this way, by using the cooling device 100, the temperature can be lowered to the first temperature suitable for the exposure process in a short time, which can effectively prevent over-baking. In addition, the uniformity of the film quality of the photoresist film after cooling is also very high. Through the exposure and development steps of the photoresist film, a good pattern shape and uniform pattern size can be formed in the surface. Furthermore, the "cooling device of the second embodiment" and "cooling plate" in Table 1 show the above-mentioned measurement and observation results using the cooling device described later.

In this first embodiment, the lifting column 43, the lifting member 46, and the lifting column driving portion 47 function as the "moving mechanism" of the present invention. In addition, step S2, step S4, and step S5 correspond to the "coating step", the "heating step", and the "cooling step" of the present invention, respectively.

In addition, the present invention is not limited to the above-mentioned embodiment, and various modifications other than the above can be made as long as it does not deviate from the scope of its essence. For example, in the first embodiment, although the correction performed by the correction pin 48 is combined with the correction performed by the exhaust mechanism 50, it is also possible to use only the correction performed by the correction pin 48, which is different from the previous one. Compared with technology, the pre-exposure step can still be performed in a short time and with high quality. That is, a device (the second embodiment) in which the exhaust mechanism 50 is removed from the cooling device 100 can also be used as the cooling unit 6 of the substrate processing device 1. That is, in addition to exhausting the space SP, it is possible to perform substrate correction by the correcting mechanism 40 in the same manner as in the first embodiment, while cooling uniformly in the surface of the substrate S in the same manner as in the first embodiment. deal with. For example, when the above-mentioned glass substrate is cooled by the cooling device of the second embodiment, as shown in the column of the "cooling device of the second embodiment" in the above Table 1, although the cooling device in the center is The time required is slightly longer than that of the first embodiment, but can be significantly shortened compared to the prior art. In addition, the uniformity of the film quality of the photoresist film after cooling is also high, and through the exposure and development steps of the photoresist film, a good pattern shape and uniform pattern size can be formed in the surface.

In addition, in the cooling devices of the first and second embodiments described above, although 16 correcting pins 48 are mounted on the frame-shaped support portion 45, the number of correcting pins 48 is not limited to this, and can be matched with the substrate The size and shape of S are appropriately changed. In addition, regarding the structure of the support portion 45, for example, as shown in FIGS. 10 and 11, a combination of a plurality of support members 45A to 45D (third embodiment, fourth embodiment) may also be used. In addition, the supporting members 45A to 45D may be configured to move in the vertical direction Z together, or the supporting members 45A to 45D may be configured to move in the vertical direction Z individually.

In addition, in the cooling device of the above-mentioned embodiment, a plurality of correction pins 48 are used to press the peripheral portion Sa of the upper surface of the substrate S dispersedly along the four sides of the substrate S to correct the warpage of the substrate S. However, as shown in FIG. 12, it is also It is possible to use a correction block 49 (fifth embodiment) that extends along the edge of the substrate S and has a lower end in a plane perpendicular to the extension direction that is processed into a small shape at the tip. In this case, the peripheral edge Sa of the upper surface of the substrate S can be continuously pressed along the edge of the substrate S to correct the warpage of the substrate S. Furthermore, the symbol 491 in the same figure is used to install the correction block 49 on the shaft portion of the support portion 45.

In addition, in the cooling device of the above embodiment, the lower end of the correcting member (correcting pin 48 or correcting block 49) is processed into a sharp shape so that it is in point contact or line contact with the peripheral portion Sa on the upper surface of the substrate S, but The shape of the lower end is not limited to this. For example, as shown in FIG. 13, the lower end of the correcting block 49 can also be processed into a contact surface 492 with a certain width W. In this case, the correcting block 49 can be connected to the peripheral portion Sa of the upper surface of the substrate S. The warpage of the peripheral edge portion Sa of the substrate S is corrected by surface contact (sixth embodiment).

In addition, in the cooling device of the above embodiment, a moving mechanism (lifting column 43, lifting member 46, and lifting column driving portion 47) is provided, and the moving mechanism is independent of the lifting of the substrate S by the lifting mechanism 30. It is used to move each correction pin 48 in the vertical direction Z, but it can also be constructed in such a way that the lifting mechanism 30 is synchronized with the raising and lowering of the substrate S to move the correction pin 48 in the vertical direction Z. In this case, no moving mechanism is needed, and the simplification of the device configuration and cost reduction can be sought.

In addition, in the cooling device of the above-mentioned embodiment, the present invention is applied to a cooling device that performs cooling processing through a close gap, but the present invention can also be applied to a cooling device that directly places the substrate S on the cooling plate 20 for cooling processing. A cooling device, a cooling device that adsorbs the bottom surface of the substrate during the cooling process, and performs the cooling process, etc.

In addition, the cooling device of the above-mentioned embodiment is used as a cooling part of a substrate processing device for manufacturing semiconductor packages. The types of materials and laminates are not limited to this. In addition, the applicable object of the cooling device of the above embodiment is not limited to the substrate S used in the manufacture of semiconductor packages, and can be applied to all devices that cool rectangular-shaped substrates.

In addition, in the substrate processing apparatus 1, a cooling device having a correction mechanism and an exhaust mechanism or a cooling device having only a correction mechanism is used to perform the cooling process in the pre-exposure step that is performed as one of the steps of manufacturing the semiconductor package. However, it is possible to use a device in which both the correction mechanism 40 and the exhaust mechanism 50 are removed from the cooling device 100 shown in FIG. 4, that is, a device that only has the function of cooling the substrate by the cooling plate 20 for cooling treatment . For example, when the glass substrate is cooled by this cooling device, as shown in the column of "Cooling Plate" in Table 1, the time required for cooling the central part and the peripheral part is longer than that of the first embodiment. It is extended, but compared with the previous technology, the time can be greatly shortened. In addition, the uniformity of the film quality of the photoresist film after cooling is also greatly improved compared to the prior art, that is, the air cooling process is performed on the transfer table. Therefore, it is also possible to perform the cooling process in the pre-exposure step using a cooling device having only the function of cooling the substrate by the cooling plate 20.

The present invention is applicable to all substrate cooling technologies for cooling rectangular-shaped substrates and all manufacturing methods for manufacturing semiconductor packages using the above-mentioned substrates.

1: Substrate processing equipment 2: Index 2A: Index robotic arm 2B: Passing station 3: Coating Department 4: Decompression drying section 5: Heating part 6: Cooling part (cooling device) 7: Transport Department 8: Control Department 10: Chamber 11: Top plate 12: side panel 13: bottom plate 14: Gate 15: opening 20: Cooling plate 21: Sphere 22: Flow Path 23: Refrigerant Supply Department 30: Lifting mechanism 31: Through hole 32: lift pin 33: Lifting member 34: Lifting pin drive 40: Correctional Institution 41, 42: Through hole 43: Lifting column 44: Attachment 45: Support 45A~45D: Supporting member 46: Lifting member 47: Lifting column drive unit 48, 48a: Correction pin (correction component) 49: Correction block (correction component) 50: Exhaust mechanism 51: Through hole 52: Attraction Department 81: CPU (Central Processing Unit) 82: memory 83: memory 84: Interface 100: Cooling device 451: under the support 452: Through hole 481: lower end 482: upper end 483, 484: Nuts 491: Shaft C: Containment box P1: Cooling position S: substrate Sa: Peripheral part SP: Space Z: vertical direction

Fig. 1 is a plan view showing the overall configuration of a substrate processing apparatus equipped with a first embodiment of the cooling device of the present invention. FIG. 2 is a block diagram showing the electrical configuration of the substrate processing apparatus shown in FIG. 1. FIG. FIG. 3 is a flowchart showing the pre-exposure steps performed by the substrate processing apparatus. Fig. 4 is a diagram showing the first embodiment of the cooling device of the present invention. Fig. 5 is a sectional view taken along line A-A in Fig. 4; Fig. 6 is a diagram for explaining how the correction pin is installed on the support part. FIG. 7 is a flowchart showing the cooling action performed by the cooling device shown in FIG. 4. FIG. 8A is a diagram schematically showing the main steps of the cooling operation of the substrate that is warped into a concave shape. FIG. 8B is a diagram schematically showing the main steps of the cooling operation of the substrate that is warped into a concave shape. FIG. 8C is a diagram schematically showing the main steps of the cooling action on the substrate that is warped in a concave shape. FIG. 8D is a diagram schematically showing the main steps of the cooling operation of the substrate that is warped into a concave shape. Fig. 9A is a diagram schematically showing the main steps of the cooling action on the convexly warped substrate. FIG. 9B is a diagram schematically showing the main steps of the cooling operation on the substrate that is warped in a convex shape. Fig. 9C is a diagram schematically showing the main steps of the cooling action on the substrate that is warped in a convex shape. Fig. 9D is a diagram schematically showing the main steps of the cooling action on the convexly warped substrate. Fig. 10 is a diagram showing the third embodiment of the cooling device of the present invention. Fig. 11 is a diagram showing a fourth embodiment of the cooling device of the present invention. Fig. 12 is a diagram showing a fifth embodiment of the cooling device of the present invention. Fig. 13 is a diagram showing a sixth embodiment of the cooling device of the present invention.

6: Cooling part (cooling device)

10: Chamber

11: Top plate

12: side panel

13: bottom plate

14: Gate

15: opening

20: Cooling plate

21: Sphere

22: Flow Path

23: Refrigerant Supply Department

30: Lifting mechanism

31: Through hole

32: lift pin

33: Lifting member

34: Lifting pin drive

40: Correctional Institution

41, 42: Through hole

43: Lifting column

44: Attachment

45: Support

46: Lifting member

47: Lifting column drive unit

48: Correction pin (correction component)

50: Exhaust mechanism

51: Through hole

52: Attraction Department

100: Cooling device

S: substrate

Sa: Peripheral part

Z: vertical direction

Claims (16)

A cooling device, which is a cooling device for cooling a rectangular-shaped substrate; it is characterized in that it is provided with: A cooling plate, which cools the above-mentioned substrate positioned at a cooling position from below; An elevating mechanism for raising and lowering the substrate relative to the cooling plate in a vertical direction between a standby position higher than the cooling position and the cooling position; and A corrective mechanism, which has a corrective member, which can abut on the upper surface of the peripheral portion of the above-mentioned base plate; The correction mechanism controls the posture of the substrate by positioning the correction member at the cooling position near the four sides of the substrate positioned at the cooling position, and correcting the peripheral portion of the substrate at the cooling position. The cooling device of claim 1, wherein the correction member positioned at the cooling position restricts the peripheral edge portion from warping upwards beyond the cooling position during the cooling of the substrate, and controls the cooling plate to be cooled by the cooling plate The posture of the above-mentioned substrate. The cooling device according to claim 1, which is provided with an exhaust mechanism which exhausts air from the space between the center part of the lower surface of the substrate and the upper surface of the cooling plate at the cooling position, and is opposed to the cooling plate side The above-mentioned substrate is given a negative pressure, In the cooling of the substrate, the exhaust mechanism restricts the central portion of the substrate from warping upward beyond the cooling position, and controls the posture of the substrate cooled by the cooling plate. Such as the cooling device of claim 1, wherein the above-mentioned correcting member is a correcting pin whose lower end is processed into a small shape at the front end, The correction mechanism has a plurality of the correction pins, and while supporting the upper end of the plurality of correction pins with a support portion, the lower end of each correction pin is in point contact with the peripheral portion of the upper surface of the substrate to control the substrate posture. The cooling device of claim 4, wherein four of the plurality of correction pins are corner pins that are respectively provided in such a way that they can make point contact with the four corners of the upper surface of the substrate. Such as the cooling device of claim 4, which is provided with a moving mechanism which is independent of the lifting of the substrate so that the support part is positioned below the cooling position and the lower end of each correction pin is positioned below the cooling position. The lower end of each correction pin moves between the upper position higher than the position of the cooling position. The cooling device of claim 6, wherein the moving mechanism is synchronized with the raising and lowering of the substrate, and the lower end of each correction pin is positioned below the cooling position and the lower end of each correction pin is raised to a high position. Move between the position above the position of the cooling position. According to the cooling device of any one of claims 4 to 7, wherein the plurality of correction pins can be detached and assembled freely with respect to the support portion, respectively. The cooling device according to claim 8, wherein, for each of the correction pins, the installation of the correction pins to the support portion can be adjusted in the vertical direction. A cooling method, characterized in that it has the following steps: The step of positioning the rectangular substrate at a predetermined cooling position relative to the cooling plate; The correcting member that can abut on the upper surface of the peripheral portion of the substrate is lowered from a position higher than the cooling position toward the substrate positioned at the cooling position, and the correcting member is positioned near the four sides of the substrate The cooling position, and the step of correcting the peripheral edge portion of the substrate at the cooling position; and The step of cooling the substrate by the cooling plate while maintaining the position of the correction member at the cooling position. The cooling method according to claim 10, wherein, by the correction member positioned at the cooling position, during the cooling of the substrate, the peripheral edge portion is restricted from being warped upward beyond the cooling position, and the control is controlled by the cooling plate The posture of the cooling substrate. The cooling method of claim 10 or 11, wherein, in the cooling of the substrate, air is discharged from the space between the center part of the lower surface of the substrate and the upper surface of the cooling plate which is sandwiched at the cooling position during the cooling of the substrate, and A negative pressure is applied to the substrate on the side of the cooling plate to restrict the step of warping the central portion of the substrate upward beyond the cooling position. A method for manufacturing a semiconductor package, comprising: an exposure and development step of exposing and developing a cured film formed on a substrate adjusted to a first temperature; and on the top of the substrate before the exposure and development step The pre-exposure step of forming the above-mentioned cured film; the manufacturing method of the semiconductor package is characterized in that: The above pre-exposure steps include: A coating step of coating the treatment liquid containing the material constituting the above-mentioned cured film on the upper surface of the above-mentioned substrate; A heating step of heating the substrate coated with the treatment liquid to a second temperature higher than the first temperature to form the cured film; and The cooling step includes positioning the substrate on which the cured film is formed above a cooling plate to cool the substrate to the first temperature. The method for manufacturing a semiconductor package according to claim 13, wherein the cooling step has the following steps: The step of positioning the substrate at a predetermined cooling position relative to the cooling plate; The correcting member that can abut on the upper surface of the peripheral portion of the substrate is lowered from a position higher than the cooling position toward the substrate positioned at the cooling position, and the correcting member is positioned near the four sides of the substrate The cooling position, and the step of correcting the peripheral edge portion of the substrate at the cooling position; and The step of cooling the substrate by the cooling plate while maintaining the position of the correction member at the cooling position. The method for manufacturing a semiconductor package according to claim 14, wherein the cooling step has the following steps: The step of controlling the posture of the substrate cooled by the cooling plate by restricting the peripheral edge portion from warping upwards beyond the cooling position during the cooling of the substrate by the correction member positioned at the cooling position. According to claim 14 or 15, the method of manufacturing a semiconductor package, wherein the cooling step has the following steps: In the cooling of the substrate, air is discharged from the space sandwiched between the center of the lower surface of the substrate and the upper surface of the cooling plate at the cooling position, and a negative pressure is applied to the substrate from the cooling plate side to restrict the substrate The central part warps upwards beyond the above-mentioned cooling position.

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