TW202132511A - Dicing die-bonding film - Google Patents

Abstract

A dicing die bond film according to the present invention includes a dicing tape, and a die bond layer laminated on an adhesive layer of the dicing tape, wherein a Hansen solubility parameter distance Ra calculated using a Hansen solubility parameter (δ_dA , δ_pA , δ_hA ) of the adhesive layer, which is represented by three-dimensional coordinates, and a Hansen solubility parameter (δ_dD , δ_pD , δ_hD ) of the die bond layer, which is represented by three-dimensional coordinates, is 3 or more and 14 or less.

Description

Diced wafer

The present invention relates to a diced chip mucous film.

In the past, it is known that in the manufacture of semiconductor devices, a dicing die-bonding film is used in order to obtain a semiconductor wafer for die-bonding. The aforementioned chip dicing die film includes a chip dicing tape laminated with an adhesive layer on a substrate layer, and a chip dicing layer laminated on the adhesive layer of the chip dicing tape in a peelable manner.

In addition, as a method of obtaining a semiconductor wafer (Die) for die bonding using the aforementioned die-cutting die-bonding film, a method having the following steps is known: a half-cutting step, which is performed by dicing the semiconductor wafer The semiconductor wafer to be processed into a die is to form grooves; the back grinding step is to grind the semiconductor wafer after the half-cutting step to reduce the thickness; the mounting step is to grind the semiconductor wafer after the back grinding step One side (for example, the side opposite to the circuit side) is attached to the die-bonding layer to fix the semiconductor wafer to the dicing tape; the expansion step is to expand the distance between the semi-cut semiconductor wafers; the notch maintenance step , Which is to maintain the distance between the semiconductor wafers; the picking step, which is to peel off the bonding layer and the adhesive layer, and take out the semiconductor wafer in the state where the bonding layer is attached; and the bonding step, which is to paste The semiconductor chip in the state with the die-bonding layer attached is then attached to the bonded body (such as a mounting substrate, etc.). Furthermore, in the aforementioned incision maintaining step, hot air (for example, 100 to 130°C) is blown to the dicing tape to heat shrink the dicing tape (after heat shrinking), and then cool and solidify to maintain the cut. The distance between adjacent semiconductor wafers (notches). In addition, in the aforementioned expansion step, the aforementioned die-bonding layer is cut into a size equivalent to the size of a plurality of singulated semiconductor chips.

However, after the die-bonding layer is singulated, the outer peripheral portion of the semiconductor wafer with the die-bonding layer may float from the surface of the adhesive layer.

In order to suppress such wafer floating, for example, Patent Document 1 describes the use of a dicing tape having specific physical properties. It is described in detail that the following dicing tape is used, and the stress relaxation rate after 1000 seconds after stretching 30% under the temperature condition of 23°C in at least one direction is 45% or more, and the stress relaxation rate in at least one direction is above 23°C The stress value after 1000 seconds after 30% extension under temperature conditions is 4 MPa or less. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2019-16633

[The problem to be solved by the invention]

However, it can be said that sufficient research has not been conducted on the suppression of wafer floating that occurs after the die-bonding layer is singulated.

Furthermore, as described above, although the die-bonding layer is peeled off (separated) from the adhesive layer in the pickup step, the die-bonding layer and the adhesive layer are in contact before the pickup step. Therefore, sometimes the components contained in the die-bonding layer transfer to the adhesive layer, or the components contained in the adhesive layer transfer to the die-bonding layer. In this way, if component transfer occurs between the die-bonding layer and the adhesive layer, the die-bonding layer and the adhesive layer sometimes no longer meet the required characteristics of each, so they are not good. However, it can be said that sufficient research has not been conducted on suppressing the transfer of components between the aforementioned crystal bonding layer and the aforementioned adhesive layer.

Therefore, the subject of the present invention is to provide a diced die sticking film that can more suppress the floating of the wafer that occurs after the die bond layer is singulated, and can more suppress the transfer of components between the die bond layer and the adhesive layer. [Technical means to solve the problem]

The dicing chip adhesive film of the present invention includes: a chip dicing tape with an adhesive layer laminated on a substrate layer; and a chip bonding layer laminated on the adhesive layer of the chip dicing tape; The Solubility parameter distance Ra is 3 or more and 14 or less. The above-mentioned Hansen solubility parameter distance Ra is represented by the Hansen solubility parameters (δ _dA , δ _pA , δ _hA ) of the aforementioned adhesive layer expressed by three-dimensional coordinates and expressed by three-dimensional coordinates The Hansen solubility parameters (δ _dD , δ _pD , and δ _hD ) of the aforementioned adhesive layer are calculated using the following formula (1).

(其中，δ_dD 及δ_dA 為分散項，δ_pD 及δ_pA 為極性項，δ_hD 及δ_hA 為氫鍵項)[Number 1]

(Among them, δ _dD and δ _dA are dispersion terms, δ _pD and δ _pA are polar terms, and δ _hD and δ _hA are hydrogen bonding terms)

For the aforementioned diced chip adhesive film, it is preferable to be: the difference between the value of _{the dispersion term δ dA of the Hansen solubility parameter of the adhesive layer and the value of the dispersion term δ dD} of the Hansen solubility parameter of the aforementioned adhesive layer The absolute value is 0.4 or more and 3.0 or less.

For the aforementioned diced chip adhesive film, preferably: the absolute value of the difference between _{the polarity term δ pA} of the Hansen solubility parameter of the adhesive layer and the polarity term δ _{pD of the Hansen solubility parameter of the aforementioned adhesive layer} It is 1.5 or more and 10.0 or less.

For the aforementioned diced chip adhesive film, preferably: _{the value of the hydrogen bond term δ hA of the Hansen solubility parameter of the adhesive layer and the value of the hydrogen bond term δ hD} of the Hansen solubility parameter of the aforementioned adhesive layer The absolute value of the difference is 0.5 or more and 6.5 or less.

The peeling force of the die-bonding layer relative to the adhesive layer is preferably 0.5 N/20 mm or more.

Hereinafter, an embodiment of the present invention will be described.

[Cut crystal stick film] As shown in FIG. 1, the chip dicing die film 20 of this embodiment includes a dicing tape 10 laminated with an adhesive layer 2 on a substrate layer 1, and an adhesive layer 2 laminated on the dicing tape 10晶层3。 Crystal layer 3. In the dicing die bonding film 20, a semiconductor wafer is attached to the die bonding layer 3. In the dicing of the semiconductor wafer using the dicing die bonding film 20, the die bonding layer 3 is also diced together with the semiconductor wafer. The die bonding layer 3 is cut into a size equivalent to the size of a plurality of singulated semiconductor chips. In this way, a semiconductor wafer with die bonding layer 3 can be obtained.

The Hansen solubility parameter distance Ra of the diced wafer 20 of the present embodiment is 3 or more and 14 or less. The Hansen solubility parameter distance Ra is represented by the three-dimensional coordinates of the Hansen solubility parameter of the adhesive layer 2 (δ _dA , Δ _pA , δ _{hA ) and the Hansen solubility parameters (δ dD} , δ _pD , δ _hD ) of the sticky crystal layer 3 represented by three-dimensional coordinates are calculated using the following formula (1).

(其中，δ_dD 及δ_dA 為分散項，δ_pD 及δ_pA 為極性項，δ_hD 及δ_hA 為氫鍵項)[Number 2]

(Among them, δ _dD and δ _dA are dispersion terms, δ _pD and δ _pA are polar terms, and δ _hD and δ _hA are hydrogen bonding terms)

The Hansen solubility parameter divides the Hildebrand dissolution parameter into three components: a dispersion term, a polar term, and a hydrogen bond term. The dispersion term, the polar term, and the hydrogen bond term can be represented by three-dimensional coordinates. For example, when evaluating the mutual solubility (compatibility) of component A and component B, if the three-dimensional coordinates of component A and the three-dimensional coordinates of component B are in an adjacent positional relationship, it is judged that the compatibility is high. If the three-dimensional coordinates of the component and the three-dimensional coordinates of the B component are in a distant positional relationship, it is judged that the compatibility is low. That is, the smaller the value of the Hansen solubility parameter distance Ra calculated using the above formula (1), the higher the compatibility of component A and component B will be judged, the larger the value of Ra will be, the phase between component A and component B will be judged The lower the solubility. Furthermore, the aforementioned dispersion term is a term related to Van der Waals force, the aforementioned polar term is a term related to dipole moment, and the aforementioned hydrogen bond term is a term related to hydrogen bonding.

_{The dispersion term δ dA} , the polarity term δ _pA and the hydrogen bond term δ _{hA in} the Hansen solubility parameter of the adhesive layer 2 _{, and the dispersion term δ dD} , the polarity term δ _pD and hydrogen in the Hansen solubility parameter of the adhesive layer 3 The key term δ _hD can be obtained using the Hansen Solubility sphere method, using three-dimensional coordinates.

The three-dimensional coordinates (δ _dA , δ _pA , and δ _hA ) of the adhesive layer 2 can be obtained by the following operation using the Hansen dissolving sphere method. (1) As a sample for evaluation, a part of the adhesive layer 2 is taken out of the die-cut die-bonding film 20 so that the die-bonding layer 3 and the base material layer 1 are not mixed. (2) The evaluation sample (the removed adhesive layer 2) is added to the evaluation solvent so that the concentration becomes 0.5 mg/mL. As the solvent for this evaluation, a solvent with known Hansen solubility parameters, that is, a solvent with known values of the dispersion term, the polarity term, and the hydrogen bond term, was used. In this embodiment, as such a solvent, acetone, toluene, ethyl acetate, ethanol, chloroform, dimethyl sulfoxide, N-methylformamide, N,N-dimethylformamide, N- Methylpyrrolidone, γ-butyrolactone, 1,1,2,2-tetrabromoethane, 1-butanol, 4-methyl-2-pentanone, 2-propanol, cyclohexane, methyl Amide, 2-methoxyethanol, acetic acid, benzyl alcohol, ethanolamine, methyl ethyl ketone, methyl cyclohexane, tetrahydrofuran, aniline, 1,4-dioxane, salicylaldehyde, ethylene glycol. That is, the evaluation sample is added to each of the above-mentioned evaluation solvents, respectively. (3) Without impregnating, stirring, etc., each evaluation solvent to which the evaluation sample is added, and after allowing it to stand at room temperature (23±2°C) under light-shielding conditions for 24 hours, evaluate the evaluation test for each evaluation solvent The degree of swelling. (4) Using the analysis software "Hansen Solubility Parameter in Practice (HSPiP) Ver.4", the Hansen solubility parameters (dispersion term, polarity term and hydrogen bond term) of the above-mentioned evaluation solvents are set in three-dimensional space with coordinates (δ _d , δ _p , δ _h ) for drawing. (5) Determine the good solvent for the adhesive layer 2 and the poor solvent for the adhesive layer 2 based on the evaluation results of the state of the evaluation sample in the above-mentioned evaluation solvents, and enter the results in the form of scores In the analysis software "HSPiP", the analysis software "HSPiP" is used to make the Hansen dissolving ball in such a way that the good solvent becomes the inner side and the poor solvent becomes the outer side. In addition, the center coordinates of the aforementioned Hansen dissolving sphere are obtained, and the center coordinates are used as the Hansen solubility parameters (δ _dA , δ _pA , and δ _hA ) of the adhesive layer 2. In addition, the judgment of a good solvent and a poor solvent is based on the following score. ˙ 1 Score evaluation sample in more than 55% of the swelling ratio of Sr occurs swollen state in the presence of, or presenting the evaluation sample is completely dissolved in the solvent of the state evaluation, or evaluation of the evaluation sample with a solvent It exists in a state of being broken into roughly the same size. In addition, the swelling rate Sr refers to the following value: measuring the maximum diameter of the evaluation sample before adding the solvent (for example, measuring the long diameter in the case of an elliptical shape, and measuring the diameter in the case of a circular shape), adding the solvent and After standing still, calculate the degree to which the maximum diameter becomes larger, and obtain the value from this. That is, the swelling rate Sr is calculated using the following formula. Sr(%)=[(Maximum diameter of evaluation sample after adding solvent and standing)-(Maximum diameter of evaluation sample before adding solvent)]/(Maximum diameter of evaluation sample before adding solvent ) × 100 ˙ score 2 for evaluation sample was 20% or more and 55% or less of the swelling ratio of Sr occurs a state in which swelling of (the evaluation sample was confirmed swollen with, but not the extent) in the presence of, or, The sample for evaluation is in a state where part of it is clearly dissolved but not completely dissolved, or the sample for evaluation is present in a state of being only partially broken in the solvent for evaluation. ˙The evaluation sample with a score of 0 exists in a state where the swelling rate Sr of more than 0% and less than 20% is swollen (the swelling is not basically confirmed by visual inspection in the evaluation sample), or the evaluation sample It is completely insoluble in the evaluation solvent.

Regarding the adhesive layer 3, the Hansen dissolving ball method can also be used to obtain the Hansen solubility parameters (δ _dD , δ _pD , δ _hD ) in the three-dimensional space in the same manner as the above-mentioned adhesive layer 2. Regarding the die-bonding layer 3, a sample obtained by cutting out a 1 cm square from the die-bonding layer 3 can be used as an evaluation sample. Furthermore, in the case of the die-bonding layer 3, the judgment of a good solvent and a poor solvent is based on the following scores. ˙ Score 1 visually, the sample for evaluation is completely dissolved in the solvent for evaluation (excluding fillers that precipitate) ˙ Score 2 visually, it is confirmed that the sample for evaluation is dissolved in the solvent for evaluation, but it is confirmed Dissolve the residue. Specifically, because a part of the evaluation sample was dissolved, the evaluation sample cut into a 1 cm square was in a state of missing corners. ˙With a score of 0, it is not visually confirmed that the evaluation sample is dissolved in the evaluation solvent. Specifically, since the evaluation sample did not dissolve at all, the evaluation sample cut into 1 cm square did not show a missing corner.

_{By combining the dispersion term δ dA} , the polarity term δ _pA and the hydrogen bond term δ _hA of the adhesive layer 2 obtained in the above manner, and the dispersion term δ _dD , the polarity term δ _pD and the hydrogen bond term δ of the adhesive layer 3 _{hD is} substituted into the above formula (1), so that the Hansen solubility parameter distance Ra can be calculated.

Here, as described above, when evaluating the compatibility of the A component and the B component, the smaller the value of the Hansen solubility parameter distance Ra is, it is judged that the higher the compatibility of the A component and the B component, the greater the value of Ra. It is judged that the compatibility of the A component and the B component is lower. Therefore, if the Hansen solubility parameter (δ_dA ,δ_pA ,δ_hA ) And the Hansen solubility parameter (δ_dD ,δ_pD ,δ_hD ) Substituting the above formula (1) and the calculated Hansen solubility parameter distance Ra becomes smaller, the affinity between the adhesive layer 2 and the adhesive layer 3 becomes higher. Therefore, the adhesive layer 3 can be sufficiently maintained in the adhesive剂层2。 Agent layer 2. However, corresponding to the higher affinity, the components contained in the die-bonding layer 3 (organic components other than polymers (such as thermosetting resins such as epoxy resins, curing agents for thermosetting resins, thermosetting catalysts (curing accelerators)), etc. ) It is easy to transfer to the adhesive layer 2 or the components contained in the adhesive layer 2 (for example, a photopolymerization initiator, an adhesion imparting agent, etc. described later) are easily transferred to the crystal bonding layer 3. In addition, the Hansen solubility parameter of the adhesive layer 2 (δ_dA ,δ_pA ,δ_hA ) And the Hansen solubility parameter (δ_dD ,δ_pD ,δ_hD ) Is substituted into the above formula (1) and the calculated Hansen solubility parameter distance Ra is larger, corresponding to the lower the affinity between the adhesive layer 2 and the sticky crystal layer 3, and the components contained in the sticky crystal layer 3 are difficult to adhere to The agent layer 2 transfers, or the components contained in the adhesive layer 2 are difficult to transfer to the crystal bonding layer 3. However, corresponding to the lowering of the affinity, the crystal bonding layer 3 cannot be sufficiently held on the adhesive layer 2. Therefore, for the chip adhesive film 20, it is necessary to set the Hansen solubility parameter distance Ra calculated from the Hansen solubility parameter of the adhesive layer 2 and the Hansen solubility parameter of the adhesive layer 3 to an appropriate value. However, for the diced die sticking film 20 of the present embodiment, as described above, since the Hansen solubility parameter distance Ra is 3 or more and 14 or less, it is possible to suppress the components contained in the die sticking layer 3 from going to the adhesive layer. 2 Transfer, or the components contained in the adhesive layer 2 are transferred to the die-bonding layer 3, and the die-bonding layer 3 can be sufficiently held on the adhesive layer 2. Thereby, it is possible to relatively suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to relatively suppress the transfer of components between the die-bonding layer 3 and the adhesive layer 2.

As described above, the dicing die bonding film 20 of this embodiment is used by attaching a semiconductor wafer to the die bonding layer 3, and the Hansen solubility parameter before attaching to the semiconductor wafer (that is, before the mounting step described later) The distance Ra may be 3 or more and 14 or less. In addition, after the dicing die bonding film 20 of this embodiment is attached to the semiconductor wafer and before the semiconductor wafer with the die bonding layer is recovered (that is, during the mounting step, the expansion step, and the notch maintenance step described later), the Hansen solubility The parameter distance Ra can be 3 or more and 14 or less. Furthermore, when the adhesive layer 2 includes the radiation-curable adhesive described later, the dicing die bonding film 20 of this embodiment is attached to the semiconductor wafer and before the radiation is irradiated, the Hansen solubility parameter distance Ra can be 3 or more And below 14. Furthermore, as described later, when the adhesive layer 2 contains a radiation-curable adhesive, the diced die-cutting film 20 of this embodiment can exceed 14 after being irradiated with radiation. As a result, the affinity between the adhesive layer 2 and the die-bonding layer 3 becomes relatively low. Therefore, the semiconductor wafer with the die-bonding layer 3 attached is easily recovered in the pickup step described later.

For the chip adhesive film 20 of this embodiment, the difference between _{the value of the dispersion term δ dA of the Hansen solubility parameter of the adhesive layer 2 and the value of the dispersion term δ dD} of the Hansen solubility parameter of the adhesive layer 3 The absolute value is preferably 0.4 or more and 3.0 or less. _{In addition, the value of the dispersion term δ dA} of the Hansen solubility parameter of the adhesive layer 2 is preferably 14 or more and 18 or less. Thereby, it is possible to further suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to further suppress the transfer of components between the die-bonding layer 3 and the adhesive layer 2.

For the chip adhesive film 20 of this embodiment, the difference between _{the value of the polarity term δ pA of the Hansen solubility parameter of the adhesive layer 2 and the value of the polarity term δ pD} of the Hansen solubility parameter of the adhesive layer 3 The absolute value is preferably 1.5 or more and 10.0 or less. _{In addition, the value of the polarity term δ pA} of the Hansen solubility parameter of the adhesive layer 2 is preferably 2 or more and 10 or less. Thereby, it is possible to further suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to further suppress the transfer of components between the die-bonding layer 3 and the adhesive layer 2.

For the chip adhesive film 20 of this embodiment, the value of the hydrogen bond term δ _{hA of the Hansen solubility parameter of the adhesive layer 2 and the value of the hydrogen bond term δ hD} of the Hansen solubility parameter of the adhesive layer 3 The absolute value of the difference is preferably 0.5 or more and 6.5 or less. _{In addition, the value of the hydrogen bond term δ hA} of the Hansen solubility parameter of the adhesive layer 2 is preferably 3 or more and 11.5 or less. Thereby, it is possible to further suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to further suppress the transfer of components between the die-bonding layer 3 and the adhesive layer 2.

For the chip adhesive film 20 of this embodiment, the peeling force of the chip adhesive layer 3 with respect to the adhesive layer 2 is preferably 0.5 N/20 mm or more. By setting the peeling force of the die-bonding layer 3 with respect to the adhesive layer 2 within the above-mentioned numerical range, the die-bonding layer 3 can be appropriately held by the adhesive layer 2, thereby further suppressing the adhesion of the die-bonding layer The wafer floats after singulation. In addition, the peeling force of the die-bonding layer 3 with respect to the adhesive layer 2 is preferably 5 N/20 mm or less.

The peeling force of the die-bonding layer 3 relative to the adhesive layer 2 can be measured by a T-type peeling test. The T-type peel test can be performed in the following way: a sample of 20 mm wide×120 mm long is cut out from the die-cut die-bonding film 20 with the substrate tape attached to the exposed surface of the die-bonding layer 3 as the measurement With the sample, a tensile tester (for example, trade name "TG-1kN", manufactured by Minebea Mitsumi) is used, and the temperature is 25°C and the tensile speed is 300 mm/min. Furthermore, when the adhesive contained in the adhesive layer 2 is a radiation curable adhesive (for example, an ultraviolet curable adhesive), for the sample for measurement before the adhesive layer 2 is irradiated with radiation (for example, ultraviolet irradiation), Perform the aforementioned T-type peel test.

The base layer 1 supports the adhesive layer 2. The base material layer 1 is produced using a resin film. Examples of the resin contained in the resin film include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, wholly aromatic polyamide, poly Vinyl chloride, polyvinylidene chloride, polyphenylene sulfide, fluororesin, cellulose resin, silicone resin, etc.

Examples of polyolefins include homopolymers of α-olefins, copolymers of two or more kinds of α-olefins, block polypropylene, random polypropylene, one or more kinds of α-olefins, and other vinyl groups. Copolymers of monomers, etc.

The homopolymer of α-olefin is preferably a homopolymer of α-olefin having 2 or more and 12 or less carbon atoms. As such a homopolymer, ethylene, propylene, 1-butene, 4-methyl-1-pentene, etc. are mentioned.

Examples of copolymers of two or more α-olefins include ethylene/propylene copolymers, ethylene/1-butene copolymers, ethylene/propylene/1-butene copolymers, and ethylene/carbon atoms of 5 to 12 Α-olefin copolymers, propylene/ethylene copolymers, propylene/1-butene copolymers, propylene/α-olefin copolymers with 5 to 12 carbon atoms, etc.

Examples of copolymers of one or more types of α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA) and the like.

The polyolefin may be what is called an α-olefin-based thermoplastic elastomer. Examples of the α-olefin-based thermoplastic elastomer include those obtained by combining a propylene-ethylene copolymer and a propylene homopolymer, or a propylene-ethylene-α-olefin terpolymer having 4 or more carbon atoms. As a commercially available product of the α-olefin-based thermoplastic elastomer, for example, Vistamaxx 3980 (manufactured by ExxonMobil Chemical Company) which is a propylene-based elastomer resin can be cited.

The resin film may contain one kind of the aforementioned resins, or two or more kinds of the aforementioned resins. Furthermore, when the adhesive layer 2 contains an ultraviolet curable adhesive described later, it is preferable that the resin film forming the base layer 1 be constructed in a manner having ultraviolet light transmittance.

The base material layer 1 may have a single-layer structure or a multilayer structure. The base material layer 1 may be obtained by non-stretch forming, or may be obtained by stretch forming, and is preferably obtained by stretch forming. When the base material layer 1 has a laminated structure, the base material layer 1 preferably has a layer containing an elastomer (hereinafter referred to as an elastomer layer) and a layer containing a non-elastomeric body (hereinafter referred to as a non-elastomeric layer). By providing the base layer 1 with an elastomer layer and a non-elastomeric layer, the elastomer layer can function as a stress relaxation layer that relaxes tensile stress. That is, since the tensile stress generated in the base layer 1 can be relatively reduced, the base layer 1 can be made to have an appropriate hardness and relatively easy to elongate. Thereby, it is possible to improve the dicing performance of dicing a semiconductor wafer into a plurality of semiconductor wafers. In addition, during the cutting in the expanding step, it is possible to prevent the base layer 1 from being broken and damaged. Furthermore, in this specification, the elastomer layer refers to a low elastic modulus layer whose tensile storage modulus at room temperature is lower than that of the non-elastomeric layer. As the elastomer layer, a tensile storage modulus at room temperature of 10 MPa or more and 200 MPa or less can be cited. As a non-elastomeric layer, a tensile storage modulus at room temperature of 200 MPa or more and 500 MPa can be cited as a non-elastomeric layer. The following ones.

The elastomer layer may include one type of elastomer or two or more types of elastomers, and preferably includes an α-olefin-based thermoplastic elastomer and EVA (ethylene-vinyl acetate copolymer). The non-elastomeric layer may include one type of non-elastomeric body, or two or more types of non-elastomeric body, and preferably contains the metallocene PP described later. When the base layer 1 has an elastomer layer and a non-elastomeric layer, the base layer 1 is preferably formed as a three-layer structure (non-elastomeric layer) with the elastomer layer as the center layer and non-elastomeric layers on opposite sides of the center layer. /Elastomer layer/Non-elastomeric layer).

In addition, as described above, in the incision maintaining step, hot air (e.g., 100 to 130°C) is blown to the diced die-cutting film maintained at room temperature (e.g., 23°C), so that the die-cutting die-cut film After thermal shrinkage occurs, it is cooled and solidified. Therefore, the outermost layer of the substrate layer 1 preferably contains a resin having a melting point close to the temperature of the hot air blown to the dicing belt. Thereby, the outermost layer melted by blowing hot air can be solidified more quickly. As a result, the incision can be maintained more sufficiently in the incision maintaining step.

The base layer 1 is a laminated structure of an elastomer layer and a non-elastomeric layer. When the elastomer layer contains an α-olefin-based thermoplastic elastomer and the non-elastomeric layer contains polyolefins such as metallocene PP described later, the elastomer layer preferably contains The total mass of the elastomer of the elastomer layer is 50% by mass or more and 100% by mass or less of α-olefin-based thermoplastic elastomer, more preferably 70% by mass or more and 100% by mass or less, and more preferably 80% by mass or more And 100% by mass or less, particularly preferably 90% by mass or more and 100% by mass or less, and most preferably 95% by mass or more and 100% by mass or less. By including the α-olefin-based thermoplastic elastomer in the aforementioned range, the affinity between the elastomer layer and the non-elastomeric layer becomes high, and therefore, the base layer 1 can be extrusion-molded relatively easily. In addition, the elastomer layer can be made to function as a stress relaxation layer, and therefore, the semiconductor wafer attached to the dicing tape can be diced efficiently.

When the base material layer 1 has a laminated structure of an elastomer layer and a non-elastomeric layer, the base material layer 1 is preferably made by co-extruding an elastomer and a non-elastomeric body to form a co-extruded structure of an elastomer layer and a non-elastomeric layer. Obtained by extrusion molding. As the co-extrusion molding, any appropriate co-extrusion molding that is usually performed in the production of films, sheets, etc. can be adopted. In the co-extrusion molding, from the viewpoint that the base material layer 1 can be obtained efficiently and inexpensively, it is preferable to use an inflation method or a co-extrusion T-die method.

When the base material layer 1 forming the laminated structure is obtained by co-extrusion, the elastomer layer and the non-elastomeric layer are heated and brought into contact in a molten state. Therefore, the elastomer and the non-elastomeric layer are preferably used. The melting point difference is small. By making the difference in melting point small, it is possible to prevent any one of the elastomer or the non-elastomer, which has a low melting point, from being overheated. Therefore, it is possible to suppress any one of the elastomer or the non-elastomer which has a low melting point. Those who generate by-products due to thermal degradation. In addition, it is also possible to suppress the occurrence of build-up failure between the elastomer layer and the non-elastomeric layer due to excessive decrease in the viscosity of either the elastomer or the non-elastomeric body which has a low melting point. The difference in melting point between the elastomer and the non-elastomeric body is preferably 0°C or more and 70°C or less, more preferably 0°C or more and 55°C or less. The melting point of the aforementioned elastomer and the aforementioned non-elastomeric body can be measured by differential scanning calorimetry (DSC) analysis. For example, by using a differential scanning calorimeter device (manufactured by TA INSTRUMENTS, model: DSC Q2000), heating to 200°C at a heating rate of 5°C/min under nitrogen gas flow, and obtaining the peak temperature of the endothermic peak Determination.

The thickness of the substrate layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, still more preferably 55 μm or more and 170 μm or less, most preferably 60 μm or more and 160 μm or less . By setting the thickness of the base material layer 1 within the aforementioned range, the dicing tape can be manufactured efficiently, and the semiconductor wafer attached to the dicing tape can be efficiently diced. The thickness of the base material layer 1 can be obtained by, for example, using a dial gauge (manufactured by PEACOCK, model: R-205), measuring the thickness of any five randomly selected points, and arithmetically averaging these thicknesses.

In the base material layer 1 formed by laminating an elastomer layer and a non-elastomeric layer, the thickness of the non-elastomeric layer relative to the thickness of the elastomer layer is preferably 1/25 or more and 1/3 or less, more preferably 1/25 or more And 1/3.5 or less, more preferably 1/25 or more and 1/4 or less, particularly preferably 1/22 or more and 1/4 or less, most preferably 1/20 or more and 1/4 or less. By setting the ratio of the thickness of the non-elastomeric layer to the thickness of the elastomeric layer in the above range, the semiconductor wafer attached to the dicing tape can be cut more efficiently.

The elastomer layer may have a single-layer (one-layer) structure or a multilayer structure. The elastomer layer is preferably a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and most preferably a 1-layer structure. When the elastomer layer has a laminated structure, all layers may include the same elastomer, or at least two layers may include different elastomers.

The non-elastomeric layer may have a single-layer (one-layer) structure or a multilayer structure. The non-elastomeric layer is preferably a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and most preferably a 1-layer structure. When the non-elastomeric layer has a laminated structure, all layers may contain the same non-elastomeric body, or at least two layers may contain different non-elastomeric bodies.

The non-elastomeric layer preferably contains as a non-elastomeric polypropylene resin (hereinafter referred to as metallocene PP) as a polymerization product obtained by using a metallocene catalyst. As the metallocene PP, a propylene/α-olefin copolymer which is a polymerization product of a metallocene catalyst can be cited. By including the metallocene PP in the non-elastomeric layer, the dicing tape can be efficiently manufactured, and the semiconductor wafer attached to the dicing tape can be efficiently diced. In addition, as a commercially available metallocene PP, WINTEC WFX4M (manufactured by Nippon Polypropylene Co., Ltd.) can be cited.

Here, the metallocene catalyst includes a transition metal compound of Group 4 of the Periodic Table (the so-called metallocene compound) and a co-catalyst that can react with the metallocene compound to activate the metallocene compound into a stable ionic state. As the catalyst, the transition metal compound of Group 4 of the periodic table includes a ligand having a cyclopentadienyl skeleton, and the metallocene catalyst includes an organoaluminum compound as necessary. The metallocene compound is a cross-linked metallocene compound capable of stereoregular polymerization of propylene.

Among the aforementioned propylene/α-olefin copolymers as the polymerization product of the metallocene catalyst, the propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst is preferably used as the metallocene catalyst. Among the propylene/α-olefin random copolymers of the polymerization product, it is preferably selected from the propylene/α-olefin random copolymer with a carbon number of 2 as the polymerization product of the metallocene catalyst, and the polymerization product as the metallocene catalyst Propylene/α-olefin random copolymer with carbon number 4, and propylene/α-olefin random copolymer with carbon number 5 as the polymerization product of metallocene catalyst. Among them, the best is Propylene/ethylene random copolymer as the polymerization product of metallocene catalyst.

Regarding the aforementioned propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst, from the viewpoints of the co-extrusion film-forming property with the aforementioned elastomer layer and the dicing property of the semiconductor wafer attached to the dicing tape , Preferably having a melting point of 80°C or more and 140°C or less, particularly 100°C or more and 130°C or less. The melting point of the aforementioned propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst can be determined by the aforementioned method.

Here, if the aforementioned elastomer layer is arranged on the outermost layer of the base layer 1, when the base layer 1 is made into a roll, the aforementioned elastomer layers arranged on the outermost layer will easily adhere to each other (easy to stick together) . Therefore, it becomes difficult to unwind the base material layer 1 from the roll. In contrast, the preferred form of the base layer 1 of the aforementioned laminated structure is non-elastomeric layer/elastomeric layer/non-elastomeric layer, that is, the non-elastomeric layer is arranged on the outermost layer, so the base layer 1 of this form is resistant to blocking The performance becomes excellent. Thereby, it is possible to suppress the delay in the manufacture of the semiconductor device using the dicing tape 10 due to adhesion.

The aforementioned non-elastomeric layer preferably contains a resin having a melting point of 100°C or more and 130°C or less and a molecular weight dispersion (mass average molecular weight/number average molecular weight) of 5 or less. As such resin, metallocene PP can be mentioned. By making the non-elastomeric layer contain the aforementioned resin, the non-elastomeric layer can be cooled and solidified more quickly in the incision maintaining step. Therefore, it is possible to more sufficiently suppress the shrinkage of the base material layer 1 after thermally shrinking the dicing tape. Thereby, in the incision maintaining step, the incision can be maintained more sufficiently.

The adhesive layer 2 contains an adhesive. The adhesive layer 2 holds the semiconductor wafer for singulation into semiconductor wafers by adhesion.

As the aforementioned adhesive, an adhesive capable of reducing the adhesive force by an external action during the use of the dicing tape 10 (hereinafter referred to as an adhesive reduction type adhesive) can be cited.

When using an adhesive with reduced adhesion as an adhesive, during the use of the dicing tape 10, the adhesive layer 2 can be used separately to show a higher adhesion state (hereinafter referred to as a high adhesion state) and a lower show The state of adhesion (hereinafter referred to as low adhesion state). For example, when the semiconductor wafer attached to the dicing tape 10 is used for dicing, high adhesion is used in order to prevent the singulated semiconductor wafers from floating or peeling off the adhesive layer 2 by dicing the semiconductor wafer. state. In contrast, after dicing the semiconductor wafer, in order to pick up a plurality of singulated semiconductor wafers, a low adhesion state is used so that the plurality of semiconductor wafers can be easily picked up from the adhesive layer 2.

As the aforementioned adhesion-reducing adhesive, for example, an adhesive that can be cured by irradiating radiation during the use of the dicing tape 10 (hereinafter referred to as a radiation curing adhesive).

As the aforementioned radiation-curable adhesive, for example, an adhesive of a type that is cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays. Among them, it is preferable to use an adhesive that is cured by irradiating ultraviolet rays (ultraviolet curing adhesive).

As the aforementioned radiation-curable adhesive, for example, an additive type radiation-curable adhesive, which contains a basic polymer as the main component, and a radiation polymerizable carbon-carbon double bond with functional groups such as radiation polymerizable Monomer component or radiation polymerizable oligomer component. As the aforementioned base polymer, an acrylic polymer is preferably used.

Examples of the acrylic polymer include those containing monomer units derived from (meth)acrylate. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. As the aforementioned acrylic polymer, it is preferable to use, for example, 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), and isonon acrylate. Esters (INA), lauryl acrylate (LA), 4-propenylmorpholine (AMCO), 2-isocyanatoethyl methacrylate (MOI), etc. Only one type of these acrylic polymers may be used, or two or more types may be used in combination.

The adhesive layer 2 may include an external crosslinking agent. As the external crosslinking agent, any type can be used as long as it can react with a base polymer (for example, an acrylic polymer) to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

Examples of the radiation polymerizable monomer components include (meth) urethane acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. Meth) acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, etc. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene. The content ratio of the radiation polymerizable monomer component and the radiation polymerizable oligomer component in the aforementioned radiation curable adhesive can be selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

The aforementioned radiation curable adhesive preferably contains a photopolymerization initiator. As the photopolymerization initiator, for example, α-keto alcohol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, aromatic sulfonyl chloride-based compounds, photoactive oxime-based compounds, two Benzophenone-based compounds, thioxanthone-based compounds, camphorquinone, halogenated ketones, acylphosphine oxide, acylphosphonate, and the like.

When the adhesive layer 2 contains an external crosslinking agent, the adhesive layer 2 preferably contains 0.1 parts by mass or more and 3 parts by mass or less of the external crosslinking agent. Moreover, when the adhesive layer 2 contains a photopolymerization initiator, the adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the photopolymerization initiator.

The adhesive layer 2 may contain a crosslinking accelerator, an adhesion-imparting agent, an anti-aging agent, a coloring agent such as a pigment or a dye, and the like in addition to the aforementioned components.

The thickness of the adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and still more preferably 5 μm or more and 25 μm or less.

The die-bonding layer 3 preferably has thermosetting properties. By making the die-bonding layer 3 contain at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group, the die-bonding layer 3 can be given thermosetting properties.

When the die-bonding layer 3 contains a thermosetting resin, examples of such thermosetting resins include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimides. Resin etc. Among them, epoxy resin is preferably used.

Examples of epoxy resins include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and fluorene type. , Phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type ring Oxy resin.

Examples of phenol resins used as curing agents for epoxy resins include novolak-type phenol resins, resol-type phenol resins, and polyhydroxystyrenes such as poly(p-hydroxystyrene).

When the die-bonding layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such a thermoplastic resin include an acrylic resin containing a thermosetting functional group. As an acrylic resin in the acrylic resin containing a thermosetting functional group, the thing containing the monomer unit derived from (meth)acrylate is mentioned. For thermosetting resins with thermosetting functional groups, the curing agent can be selected according to the type of thermosetting functional group.

From the viewpoint of allowing the curing reaction of the resin component to proceed sufficiently or increasing the curing reaction speed, the die-bonding layer 3 may contain a thermosetting catalyst (curing accelerator). Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihaloborane-based compounds.

The die bonding layer 3 may include a thermoplastic resin. The thermoplastic resin acts as a binder. Examples of thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutadiene resin. , Polycarbonate resin, thermoplastic polyimide resin, polyamide 6, polyamide 6,6 and other polyamide resins, phenoxy resins, acrylic resins, saturated polyester resins such as PET or PBT, polyamides Amine imine resin, fluororesin, etc. Only one type of the above-mentioned thermoplastic resin may be used, or two or more types may be used in combination. As the above-mentioned thermoplastic resin, an acrylic resin is preferred from the viewpoint that there are few ionic impurities and high heat resistance to easily ensure connection reliability by the die-bonding layer.

It is preferable that the said acrylic resin contains the monomer unit derived from (meth)acrylic acid ester as a polymer which is the most monomer unit by mass ratio. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. The above-mentioned acrylic resin may contain monomer units derived from other components that can be copolymerized with (meth)acrylate. As the above-mentioned other components, for example, carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, etc. Functional monomers, various multifunctional monomers, etc. From the viewpoint of achieving high cohesion in the sticky layer, the above-mentioned acrylic resin is preferably a (meth)acrylate (especially an alkyl (meth)acrylate with an alkyl group of 4 or less carbon atoms) and a carboxyl group Copolymers of monomers, nitrogen-containing monomers, multifunctional monomers (especially polyglycidyl-based multifunctional monomers), more preferably ethyl acrylate and butyl acrylate, acrylic acid, acrylonitrile, (methyl ) Copolymer of polyglycidyl acrylate.

According to requirements, the die-bonding layer 3 may contain one or more than two other components. Examples of other components include flame retardants, silane coupling agents, and ion scavengers.

The thickness of the die bond layer 3 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less.

Furthermore, the viscosity change measured by using a rheometer (for example, HAAKE MARS III manufactured by Thermo Fisher Scientific) for the adhesive layer 3 is preferably 300% or less. If the viscosity change of the die stick layer 3 is 300% or less, the affinity between the adhesive layer 2 and the die stick layer 3 can be relatively reduced. As a result, it is considered that the transfer of components from the die stick layer 3 to the adhesive layer 2 can be sufficiently suppressed Therefore, it is considered that it is possible to suppress the change in the characteristics of the die-bonding layer 3.

The diced die bonding film 20 of this embodiment can be used as an auxiliary tool for manufacturing semiconductor integrated circuits, for example. Hereinafter, a specific example of using the dicing die bonding film 20 will be described. Hereinafter, an example of using the dicing die attach film 20 in which the base layer 1 is one layer will be described.

The method of manufacturing a semiconductor integrated circuit has the following steps: a half-cutting step, which is to form grooves on a semiconductor wafer to be processed into a die by cutting the semiconductor wafer; and a back grinding step, which is The semiconductor wafer after the half-cutting step is ground to reduce the thickness; the mounting step is to attach one side of the semiconductor wafer after the back grinding step (for example, the side opposite to the circuit surface) to the die bonding layer 3. The semiconductor wafer is fixed to the dicing tape 10; the expansion step is to expand the distance between the semiconductor wafers processed by half-cutting; the incision maintaining step is to maintain the distance between the semiconductor wafers; the picking step is to bond the die layer 3 and the adhesive layer 2 are peeled off, and the semiconductor chip (Die) is taken out in the state where the die bonding layer 3 is attached; and the die bonding step is to make the semiconductor wafer in the state where the die bonding layer 3 is attached (Die) ) Followed by the body. When performing these steps, the dicing tape (chip dicing film) of this embodiment is used as a manufacturing auxiliary tool.

In the half-cutting step, as shown in FIG. 2A and FIG. 2B, a half-cutting process for cutting the semiconductor integrated circuit into small pieces (Die) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W on the opposite side to the circuit surface (see FIG. 2A). In addition, the dicing ring R is attached to the wafer processing tape T (see FIG. 2A). In the state where the wafer processing tape T is attached, a groove for dividing is formed (refer to FIG. 2B). In the back grinding step, as shown in FIGS. 2C and 2D, the semiconductor wafer is ground to make the thickness thinner. Specifically, the back polishing tape G is attached to the surface where the grooves are formed, and on the other hand, the wafer processing tape T attached first is peeled off (see FIG. 2C). The grinding process is performed with the back grinding tape G attached until the semiconductor wafer W reaches a predetermined thickness (refer to FIG. 2D).

In the mounting step, as shown in FIGS. 3A to 3B, after the dicing ring R is mounted on the adhesive layer 2 of the dicing tape 10, a semi-cut semiconductor is attached to the exposed surface of the die bonding layer 3 Wafer W (refer to FIG. 3A). After that, the back polishing tape G is peeled off from the semiconductor wafer W (see FIG. 3B).

In the expansion step, as shown in FIGS. 4A to 4C, the dicing ring R is fixed to the holder H of the expansion device. The dicing die sticking film 20 is lifted up from the lower side using the lifting member U included in the expanding device, so that the dicing die sticking film 20 is stretched to expand in the plane direction (see FIG. 4B). Thereby, the semi-cut semiconductor wafer W is cut under a specific temperature condition. The above-mentioned temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. The extended state is released by lowering the lifting member U (refer to FIG. 4C). Furthermore, in the expansion step, as shown in FIGS. 5A to 5B, the dicing tape 10 is stretched under higher temperature conditions (for example, room temperature (23° C.)) to expand the area. Thereby, the cut adjacent semiconductor wafers are separated in the plane direction of the film surface, and the gap is further enlarged.

In the notch maintenance step, as shown in FIG. 6, hot air (for example, 100-130°C) is blown to the dicing tape 10 to heat shrink the dicing tape 10, and then it is cooled and solidified to maintain the cut adjacent semiconductor wafers. The distance between (cut).

_{Here, as described above, the Hansen solubility parameters (δ dA} , δ _pA , δ _hA ) of the adhesive layer 2 represented by three-dimensional coordinates and the viscosity represented by three-dimensional coordinates of the diced wafer 20 of this embodiment The Hansen solubility parameters (δ _dD , δ _pD , δ _hD ) of the crystal layer 3 are calculated using the following formula (1), and the distance Ra of the Hansen solubility parameter is 3 or more and 14 or less. Therefore, the adhesion of the crystal layer 3 can be suppressed. The contained components (such as the aforementioned thermal curing catalyst) are transferred to the adhesive layer 2 or the components contained in the adhesive layer 2 (such as the aforementioned external crosslinking agent and photopolymerization initiator) are transferred to the adhesive layer 3, and, The die-bonding layer 3 can be sufficiently held on the adhesive layer 2. Therefore, the floating of the wafer that occurs after the die-bonding layer is singulated can be relatively suppressed, and the component transfer between the die-bonding layer 3 and the adhesive layer 2 can be relatively suppressed.

(其中，δ_dD 及δ_dA 為分散項，δ_pD 及δ_pA 為極性項，δ_hD 及δ_hA 為氫鍵項)[Number 3]

(Among them, δ _dD and δ _dA are dispersion terms, δ _pD and δ _pA are polar terms, and δ _hD and δ _hA are hydrogen bonding terms)

In the pick-up step, as shown in FIG. 7, the semiconductor wafer in the state where the die bonding layer 3 is attached is peeled off from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised, and the semiconductor wafer to be picked up is lifted up via the dicing tape 10. Use the suction jig J to hold the semiconductor chip being lifted. Furthermore, when the adhesive layer 2 contains a radiation-curable adhesive, it is preferable to irradiate radiation so that the Hansen solubility parameter distance Ra reaches 14. The intensity of the irradiated radiation is appropriately selected according to the type of radiation curing adhesive. Thereby, the affinity between the adhesive layer 2 and the die-bonding layer 3 can be relatively reduced, and therefore, the semiconductor chip with the die-bonding layer 3 can be easily recovered.

In the die bonding step, the semiconductor chip in the state where the die bonding layer 3 is attached is attached to the adherend.

The matters disclosed in this manual include the following.

(1) A dicing chip adhesive film, comprising: a chip dicing tape laminated with an adhesive layer on a substrate layer; and a chip bonding layer laminated on the adhesive layer of the chip dicing tape, the chip bonding The Hansen solubility parameter distance Ra of the film is 3 or more and 14 or less. The above-mentioned Hansen solubility parameter distance Ra is based on the Hansen solubility parameters (δ _dA , δ _pA , δ _hA ) of the aforementioned adhesive layer represented by three-dimensional coordinates. _{The Hansen solubility parameters (δ dD} , δ _pD , and δ _hD ) of the aforementioned sticky crystal layer represented by three-dimensional coordinates are calculated using the following formula (1).

(其中，δ_dD 及δ_dA 為分散項，δ_pD 及δ_pA 為極性項，δ_hD 及δ_hA 為氫鍵項)[Number 4]

(Among them, δ _dD and δ _dA are dispersion terms, δ _pD and δ _pA are polar terms, and δ _hD and δ _hA are hydrogen bonding terms)

According to this configuration, it is possible to relatively suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to relatively suppress the transfer of components between the die-bonding layer and the adhesive layer.

(2) The diced chip adhesive film described in (1) above, wherein _{the value of the dispersion term δ dA of the Hansen solubility parameter of the adhesive layer and the value of the dispersion term δ dD} of the Hansen solubility parameter of the aforementioned adhesive layer The absolute value of the difference is 0.4 or more and 3.0 or less. (3) The diced wafer described in (2) above, wherein the dispersion term δ _dA of the Hansen solubility parameter of the adhesive layer has a value of 14 or more and 18 or less.

According to this configuration, it is possible to further suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to further suppress the transfer of components between the die-bonding layer and the adhesive layer.

(4) The diced wafer described in any one of (1) to (3) above, wherein _{the value of the polarity term δ pA} of the Hansen solubility parameter of the adhesive layer and the Hansen solubility of the aforementioned adhesive layer The absolute value of the difference of the polarity term δ _pD of the parameter is 1.5 or more and 10.0 or less. (5) The diced wafer described in (4) above, wherein the polarity term δ _pA of the Hansen solubility parameter of the adhesive layer has a value of 2 or more and 10 or less.

According to this configuration, it is possible to further suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to further suppress the transfer of components between the die-bonding layer and the adhesive layer.

(6) The diced wafer described in any one of (1) to (5) above, wherein the value _{of the hydrogen bond term δ hA of the Hansen solubility parameter of the adhesive layer is the same as that of the Hansen layer of the adhesive layer.} The absolute value of the difference in the value of the hydrogen bond term δ _{hD of the solubility parameter is 0.5 or more and 6.5 or less.} (7) The diced wafer described in (6) above, wherein the value of the hydrogen bond term δ _hA of the Hansen solubility parameter of the adhesive layer is 3 or more and 11.5 or less.

According to this configuration, it is possible to further suppress the floating of the wafer that occurs after the die-bonding layer is singulated, and it is possible to further suppress the transfer of components between the die-bonding layer and the adhesive layer.

(8) The diced mucosal film as described in any one of (1) to (7) above, wherein The peeling force of the die-bonding layer relative to the adhesive layer is 0.5 N/20 mm or more. (9) As the diced wafer described in (8) above, where The peeling force of the die-bonding layer with respect to the adhesive layer is 5 N/20 mm or less.

According to this structure, the die-bonding layer can be appropriately held in the adhesive layer, and therefore, it is possible to further suppress the floating of the wafer that occurs after the die-bonding layer is singulated.

Furthermore, the dicing die-cut film of the present invention is not limited to the foregoing embodiment. In addition, the diced chip mucous film of the present invention is not limited by the aforementioned effects. The diced die attach film of the present invention can be modified in various ways without departing from the scope of the present invention. Example

Next, the present invention will be further specifically explained by citing examples. The following examples are used to further illustrate the present invention in detail, and do not limit the scope of the present invention.

之圓形，從而得到330 mm

之附有黏晶層之PET隔離膜。 其次，從切晶帶A去除PET隔離膜而使黏著劑層之一面露出後，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫(23±2℃)下將附有黏晶層之PET隔離膜貼合於切晶帶A，藉此得到切晶黏晶膜A。 即，實施例1之切晶帶A係聚烯烴膜、黏著劑層、黏晶層及PET隔離膜依次積層而構成者。[Example 1] <Preparation of crystal cutting tape> 11 parts by mass of 2-hydroxyethyl acrylate (hereinafter referred to as HEA) as a monomer were added to a reaction vessel equipped with a condenser, a nitrogen introduction tube, a thermometer, and a stirring device, 89 parts by mass of isononyl acrylate (hereinafter referred to as INA), 0.2 parts by mass of azobisisobutyronitrile (hereinafter referred to as AIBN) as a thermal polymerization initiator, and further, so that the concentration of the aforementioned monomers reaches 38% After adding butyl acetate as a reaction solvent, polymerization was performed at 62° C. for 4 hours under a nitrogen stream, and polymerization treatment was performed at 75° C. for 2 hours to obtain acrylic polymer A. To the acrylic polymer A, 12 parts by mass of 2-methacryloxyethyl isocyanate (hereinafter referred to as MOI) and 0.06 parts by mass of dibutyltin dilaurate were added to the acrylic polymer A, and the process was carried out at 50°C for 12 hours under air flow. The addition reaction treatment gave acrylic polymer A'. Next, with respect to 100 parts by mass of the acrylic polymer A', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution A). Next, use an applicator to apply the adhesive solution A on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was used as a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain diced tape A . <Preparation of the die-bonding layer> With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by NAGASE CHEMTEX, with a mass average molecular weight of 900,000), 200 parts by mass of epoxy resin (trade name "KI -3000-4", manufactured by Toto Chemical Industry Co., Ltd.), 200 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.), 350 parts by mass (calculated as silica filler) of silica filler ( Trade name "SE2050-MCV", manufactured by ADMATECHS, with an average particle size of 500 nm) and 2 parts by mass of a curing accelerator (trade name "CUREZOL 2PHZ-PW", manufactured by Shikoku Kasei Kogyo Co., Ltd.) are added to methyl ethyl In the ketone, an adhesive composition A having a solid content concentration of 30% by mass was prepared. Next, use an applicator to apply the adhesive composition A on the silicone release treatment surface of the PET release film (thickness 50 μm) with the silicone release treatment surface to form a coating film. The membrane is subjected to solvent removal treatment at 120°C for 2 minutes. In this way, a crystal bonding layer with a thickness (average thickness) of 10 μm was formed on the PET isolation film. ＜Production of chip adhesive film＞ By punching the PET isolation film with the crystal adhesion layer (hereinafter referred to as the PET isolation film with the crystal adhesion layer) into 330 mm

The round shape to get 330 mm

The PET isolation film with a sticky crystal layer. Next, after removing the PET isolation film from the dicing tape A to expose one side of the adhesive layer, use a laminator to contact the exposed surface of the die-bonding layer with the exposed surface of the adhesive layer at room temperature (23 Attach the PET isolation film with the die-bonding layer to the dicing tape A at ±2°C, thereby obtaining the die-cutting die-bonding film A. That is, the dicing tape A of Example 1 is composed of a polyolefin film, an adhesive layer, a crystal bonding layer, and a PET isolation film laminated in this order.

之附有黏晶層之PET隔離膜後，從切晶帶B去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶B，藉此得到切晶黏晶膜B。[Example 2] <Preparation of the dicing tape> To the same reaction vessel as the reaction vessel described in Example 1, 16 parts by mass of HEA as monomers, 84 parts by mass of butyl acrylate (hereinafter referred to as BA), 0.2 parts by mass of AIBN as a thermal polymerization initiator, and further, after adding butyl acetate as a reaction solvent so that the concentration of the aforementioned monomer becomes 32%, polymerization was carried out at 62°C for 4 hours under a nitrogen stream, and the temperature was 75°C. The polymerization treatment was performed for 2 hours, and acrylic polymer B was obtained. To this acrylic polymer B, 17 parts by mass of MOI and 0.09 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer B'. Next, with respect to 100 parts by mass of the acrylic polymer B', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution B). Next, use an applicator to apply the adhesive solution B on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain diced tape B . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape B to expose one side of the adhesive layer. Use a laminator to press the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. Then, attach the PET isolation film with the die-bonding layer to the dicing tape B at room temperature, thereby obtaining the die-cutting die-bonding film B.

之附有黏晶層之PET隔離膜後，從切晶帶C去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面抵接於黏著劑層之露出面之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶C，藉此得到切晶黏晶膜C。[Example 3] <Preparation of crystal cutting tape> To the same reaction vessel as that described in Example 1, 11 parts by mass of HEA as a monomer and 2-ethylhexyl acrylate (hereinafter referred to as 2EHA) were added. 89 parts by mass, 0.2 parts by mass of AIBN as a thermal polymerization initiator, and then butyl acetate as a reaction solvent was added so that the concentration of the aforementioned monomers became 36%, and polymerization was carried out at 62°C for 4 hours under a nitrogen stream , The polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic polymer C. To this acrylic polymer C, 13 parts by mass of MOI and 0.07 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer C'. Next, with respect to 100 parts by mass of the acrylic polymer C', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution C). Next, use an applicator to apply the adhesive solution C on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain diced tape C . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape C to expose one side of the adhesive layer. Use a laminator to contact the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. In the surface method, the PET isolation film with the crystal bonding layer is attached to the dicing tape C at room temperature, thereby obtaining the dicing chip adhesive film C.

之附有黏晶層之PET隔離膜後，從切晶帶D去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶D，藉此得到切晶黏晶膜D。[Example 4] <Preparation of crystal cutting tape> To the same reaction vessel as that described in Example 1, 24 parts by mass of HEA as a monomer, 76 parts by mass of INA, and AIBN as a thermal polymerization initiator were added to the reaction vessel. 0.2 parts by mass, further, butyl acetate as a reaction solvent was added so that the concentration of the aforementioned monomers became 32%, polymerization was carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic acid系polymer D. To this acrylic polymer D, 23 parts by mass of MOI and 0.12 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer D'. Next, with respect to 100 parts by mass of the acrylic polymer D', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution D). Next, use an applicator to apply the adhesive solution D on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm) was pasted on the adhesive layer and stored at 50°C for 24 hours to obtain a diced tape D . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape D to expose one side of the adhesive layer. Use a laminator to press the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. Then, the PET isolation film with the die-bonding layer is attached to the die-cutting tape D at room temperature, thereby obtaining the die-cutting die-bonding film D.

之附有黏晶層之PET隔離膜後，從切晶帶E去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶E，藉此得到切晶黏晶膜E。[Example 5] <Preparation of crystal cutting tape> Into the same reaction vessel as the reaction vessel described in Example 1, 42 parts by mass of HEA as a monomer, 58 parts by mass of INA, and AIBN as a thermal polymerization initiator were added 0.2 parts by mass, further, after adding butyl acetate as a reaction solvent so that the concentration of the aforementioned monomers became 30%, polymerization was carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic acid系polymer E. To this acrylic polymer E, 41 parts by mass of MOI and 0.21 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer E'. Next, with respect to 100 parts by mass of the acrylic polymer E', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution E). Next, use an applicator to apply the adhesive solution E on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was used as a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain diced tape E . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape E to expose one side of the adhesive layer. Use a laminator to press the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. Then, the PET isolation film with the die-bonding layer is attached to the dicing tape E at room temperature, thereby obtaining the die-cutting die-bonding film E.

之附有黏晶層之PET隔離膜後，從切晶帶F去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶F，藉此得到切晶黏晶膜F。[Example 6] <Preparation of crystal cutting tape> Into the same reaction vessel as that described in Example 1 was added 14 parts by mass of HEA, 71 parts by mass of 2EHA, and 4-acrylomorpholine ( Hereinafter referred to as ACMO) 15 parts by mass, 0.2 parts by mass of AIBN as a thermal polymerization initiator, and further, after adding butyl acetate as a reaction solvent so that the concentration of the aforementioned monomer becomes 34%, the mixture is heated to 62 parts under a nitrogen stream. Polymerization was performed at °C for 4 hours, and polymerization treatment was performed at 75 °C for 2 hours, and acrylic polymer F was obtained. To this acrylic polymer F, 15 parts by mass of MOI and 0.08 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer F'. Next, with respect to 100 parts by mass of the acrylic polymer F', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution F). Next, use an applicator to apply the adhesive solution F on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape F . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape F to expose one side of the adhesive layer. Use a laminator to press the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. Then, the PET isolation film with the die-bonding layer is attached to the die-cutting tape F at room temperature, thereby obtaining the die-cutting die-bonding film F.

之附有黏晶層之PET隔離膜後，從切晶帶G去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶G，藉此得到切晶黏晶膜G。[Comparative example 1] <Preparation of crystal cutting tape> Into the same reaction vessel as that described in Example 1, 5 parts by mass of HEA as a monomer, 95 parts by mass of lauryl acrylate (hereinafter referred to as LA), 0.2 parts by mass of AIBN as a thermal polymerization initiator, and further, after adding butyl acetate as a reaction solvent so that the concentration of the aforementioned monomer becomes 42%, polymerization was carried out at 62°C for 4 hours under a nitrogen stream, and the temperature was 75°C. The polymerization treatment was performed for 2 hours, and acrylic polymer G was obtained. To this acrylic polymer G, 15 parts by mass of MOI and 0.03 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under air flow to obtain acrylic polymer G′. Next, with respect to 100 parts by mass of the acrylic polymer G', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution G). Next, use an applicator to apply the adhesive solution G on the silicone release treatment surface of the PET separator (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was used as a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain diced tape G . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape G to expose one side of the adhesive layer. Use a laminator to press the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. Then, the PET isolation film with the die-bonding layer is attached to the die-cutting tape G at room temperature, thereby obtaining the die-cutting die-bonding film G.

之附有黏晶層之PET隔離膜後，從切晶帶H去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶H，藉此得到切晶黏晶膜H。[Comparative example 2] <Preparation of crystal cutting tape> To the same reaction vessel as that described in Example 1, 47 parts by mass of HEA as monomer, 53 parts by mass of INA, and AIBN as a thermal polymerization initiator were added to the reaction vessel. 0.2 parts by mass, further, after adding butyl acetate as a reaction solvent so that the concentration of the aforementioned monomers became 28%, polymerization was carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic acid系polymer H. To this acrylic polymer H, 156 parts by mass of MOI and 0.28 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under air flow to obtain acrylic polymer H'. Next, with respect to 100 parts by mass of the acrylic polymer H', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution H). Next, use an applicator to apply the adhesive solution H on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. Thereafter, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) manufactured by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was used as the base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain diced tape H . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape H to expose one side of the adhesive layer. Use a laminator to press the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. Then, the PET isolation film with the die-bonding layer is attached to the die-cutting tape H at room temperature, thereby obtaining the die-cutting die-bonding film H.

之附有黏晶層之PET隔離膜後，從切晶帶I去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將附有黏晶層之PET隔離膜貼合於切晶帶I，藉此得到切晶黏晶膜I。[Comparative Example 3] <Preparation of the dicing tape> Into the same reaction vessel as that described in Example 1, 19 parts by mass of HEA as monomers, 81 parts by mass of ethyl acrylate (hereinafter referred to as EA), 0.2 parts by mass of AIBN as a thermal polymerization initiator, and further, after adding butyl acetate as a reaction solvent so that the concentration of the aforementioned monomers became 30%, polymerization was carried out at 62°C for 4 hours under a nitrogen stream, and at 75°C The polymerization treatment was performed for 2 hours, and acrylic polymer I was obtained. To this acrylic polymer I, 121 parts by mass of MOI and 0.11 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50°C for 12 hours under an air stream to obtain an acrylic polymer I'. Next, with respect to 100 parts by mass of the acrylic polymer I', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Japan Polyurethane Co., Ltd.) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad 127", manufactured by IGM Corporation) 2 parts by mass to prepare an adhesive solution (hereinafter, also referred to as adhesive solution I). Next, use an applicator to apply the adhesive solution I on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry it at 120°C for 2 minutes. An adhesive layer with a thickness of 10 μm is formed. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain diced tape I . <Preparation of the die-bonding layer> It was produced in the same manner as in Example 1. <Production of slicing crystal sticking film> 330 mm was obtained in the same manner as in Example 1

After the PET isolation film with the die-bonding layer is attached, remove the PET isolation film from the dicing tape I to expose one side of the adhesive layer. Use a laminator to press the exposed surface of the die-bonding layer against the exposed surface of the adhesive layer. Then, attach the PET isolation film with the die-bonding layer to the dicing tape I at room temperature, thereby obtaining the die-cutting die-bonding film I.

(Hansen Solubility Parameter) For the crystal-cut mucous film described in each example, use the Hansen dissolving ball method to obtain the three-dimensional coordinates (δ _dA , δ _pA , δ _hA ) of the adhesive layer and the three-dimensional coordinates of the adhesive layer (δ _dD , δ _pD , δ _hD ).

Specifically, the three-dimensional coordinates (δ_dA ,δ_pA ,δ_hA ). (1) As a sample for evaluation, a part of the adhesive layer was taken out of the diced die sticking film so that the die sticking layer and the base material layer (polyolefin film) were not mixed. Furthermore, when collecting a sample for evaluation of the adhesive layer, the adhesive crystal layer was removed from the adhesive layer. (2) The evaluation sample (the removed adhesive layer) is added to the evaluation solvent so that the concentration becomes 0.5 mg/mL. As the solvent for this evaluation, a solvent with known Hansen solubility parameters, that is, a solvent with known values of the dispersion term, the polarity term, and the hydrogen bond term, was used. As such a solvent, acetone, toluene, ethyl acetate, ethanol, chloroform, dimethyl sulfide, N-methylformamide, N,N-dimethylformamide, and N-methylpyrrolidone are used. , Γ-butyrolactone, 1,1,2,2-tetrabromoethane, 1-butanol, 4-methyl-2-pentanone, 2-propanol, cyclohexane, formamide, 2- Methoxyethanol, acetic acid, benzyl alcohol, ethanolamine, methyl ethyl ketone, methyl cyclohexane, tetrahydrofuran, aniline, 1,4-dioxane, salicylaldehyde, ethylene glycol. That is, the evaluation sample is added to each of the above-mentioned evaluation solvents, respectively. (3) Without impregnating, stirring, etc., each evaluation solvent to which the evaluation sample is added, and after allowing it to stand at room temperature (23±2°C) under light-shielding conditions for 24 hours, evaluate the evaluation test for each evaluation solvent The degree of swelling. (4) Using the analysis software "Hansen Solubility Parameter in Practice (HSPiP) Ver.4", the Hansen solubility parameters (dispersion term, polarity term and hydrogen bond term) of the above-mentioned evaluation solvents are set in three-dimensional space with coordinates (δ_d ,δ_p ,δ_h ) For drawing. (5) Determine the good solvent for the adhesive layer and the poor solvent for the adhesive layer based on the evaluation results of the state of the evaluation sample in the above-mentioned evaluation solvents, and input the results into the analysis software in the form of scores In "HSPiP", the analysis software "HSPiP" is used to make Hansen dissolving balls in such a way that the good solvent becomes the inner side and the poor solvent becomes the outer side. In addition, obtain the center coordinates of the aforementioned Hansen dissolving sphere, and use the center coordinates as the Hansen solubility parameter of the adhesive layer (δ_dA ,δ_pA ,δ_hA ). In addition, the judgment of a good solvent and a poor solvent is based on the following score.˙ Score 1 The evaluation sample is present in a state where the swelling rate Sr exceeds 55%, or the evaluation sample is completely dissolved in the evaluation solvent, or the evaluation sample is crushed in the evaluation solvent It exists in a state of splitting into roughly the same size. Furthermore, the swelling rate Sr refers to the following value: measuring the maximum diameter of the evaluation sample before adding the solvent (for example, measuring the long diameter in the case of an elliptical shape, and measuring the diameter in the case of a circular shape), adding the solvent and After standing still, calculate the degree of increase in the maximum diameter to obtain the value. That is, the swelling rate Sr is calculated using the following formula. Sr(%)=[(Maximum diameter of evaluation sample after adding solvent and standing)-(Maximum diameter of evaluation sample before adding solvent)]/(Maximum diameter of evaluation sample before adding solvent )×100˙ Score 2 The evaluation sample is present in a state where swelling occurs with a swelling rate Sr of 20% or more and 55% or less (swelling is confirmed in the evaluation sample, but the degree is not large), or the evaluation sample shows a part The state is clearly dissolved but not completely dissolved, or the evaluation sample exists in the state of being only partially fragmented in the evaluation solvent.˙ Score 0 The evaluation sample is present in a state where swelling occurs with a swelling rate Sr of more than 0% and less than 20% (the swelling is hardly confirmed by visual inspection in the evaluation sample), or the evaluation sample does not dissolve at all For evaluation solvents.

For the three-dimensional coordinates (δ _dD , δ _pD , and δ _hD ) of the adhesive layer, it is also calculated by the same operation as the above-mentioned adhesive layer. In the collection of the sticky crystal layer, it is removed from the adhesive layer and then collected. A sample obtained by cutting a 1 cm square from the adhesive layer was used as an evaluation sample. Furthermore, in the case of the die-bonding layer, the judgment of good solvent and poor solvent is based on the following scores. ˙ Score 1 visually, the sample for evaluation is completely dissolved in the solvent for evaluation (excluding fillers that precipitate) ˙ Score 2 visually, it is confirmed that the sample for evaluation is dissolved in the solvent for evaluation, but it is confirmed Dissolve the residue. Specifically, because a part of the evaluation sample was dissolved, the evaluation sample cut into a 1 cm square was in a state of missing corners. ˙With a score of 0, it is not visually confirmed that the evaluation sample is dissolved in the evaluation solvent. Specifically, since the evaluation sample did not dissolve at all, the evaluation sample cut into 1 cm square did not show a missing corner.

In addition, the Hansen solubility parameter distance Ra is calculated using the following formula (1) based on the value of the three-dimensional coordinate of the adhesive layer and the value of the three-dimensional coordinate of the glue layer.

(其中，δ_dD 及δ_dA 為分散項，δ_pD 及δ_pA 為極性項，δ_hD 及δ_hA 為氫鍵項)[Number 5]

(Among them, δ _dD and δ _dA are dispersion terms, δ _pD and δ _pA are polar terms, and δ _hD and δ _hA are hydrogen bonding terms)

The three-dimensional coordinates (δ _dA , δ _pA , δ _hA ) of the adhesive layer and the three-dimensional coordinates (δ _dD , δ _pD , δ _hD ) of the adhesive layer obtained by the above method, the dispersion term of the adhesive layer and the adhesive crystal The absolute value of the difference between the dispersion term of the layer, the absolute value of the polarity term of the adhesive layer and the polarity term of the crystal bonding layer, the absolute value of the hydrogen bonding term of the adhesive layer and the hydrogen bonding term of the bonding crystal layer, and the Hansen solubility The parameter distance Ra is shown in Table 1 below.

×5 cm、載體之平均粒徑為3 μm)˙ 柱溫度：40℃˙ 柱流量：0.8 mL/min˙ 溶析液組成：超純水/乙腈之梯度條件˙ 注射量：10 μL˙ 檢測器：PDA檢測器˙ 檢測波長：260 nm 再者，光聚合起始劑之定量基於標準曲線及上述分析結果來進行。 將以上述方式測定之光聚合起始劑之轉移量示於下述表1。(Transfer amount of photopolymerization initiator) Regarding the dicing die-cut film described in each example, the amount of photopolymerization initiator transferred from the adhesive layer to the die-bonding layer was measured. The measurement of the transfer amount of the photopolymerization initiator is performed in the following manner. Furthermore, the following (1) to (4) are all performed in a dark place. (1) Strip about 0.1 g of the sticky crystal layer from the adhesive layer. (2) Add the stripped sticky crystal layer to 3 mL of chloroform solution, and then shake it overnight (about 16 hours) in a cool and dark place, thereby extracting the photopolymerization initiator into the chloroform solution. (3) Add 5 mL of methanol solution to the chloroform solution after extracting the photopolymerization initiator to re-precipitate the components other than the photopolymerization initiator, and filter the re-precipitated components with a membrane filter to obtain the photopolymerization The dissolving solution of the starting agent (a mixed solution of chloroform and methanol). (4) Analyze the dissolved solution of the aforementioned photopolymerization initiator by HPLC. The analysis based on HPLC was performed under the following conditions. Analysis equipment Waters, Acquity HPLC measurement conditions ˙Column : GL Science, Inert Sustain (registered trademark) C18 (4.6 mm

×5 cm, the average particle size of the carrier is 3 μm) ˙Column temperature: 40℃ ˙Column flow: 0.8 mL/min ˙Solution composition: gradient conditions of ultrapure water/acetonitrile ˙Injection volume: 10 μL ˙Detector : PDA detector ˙ detection wavelength: 260 nm Furthermore, the quantification of the photopolymerization initiator is based on the standard curve and the above analysis results. The transfer amount of the photopolymerization initiator measured in the above-mentioned manner is shown in Table 1 below.

(Peel force) Regarding the chip adhesive film described in each example, the peeling force of the chip adhesive layer relative to the adhesive layer was measured. The peeling force of the die-bonding layer relative to the adhesive layer is measured by a T-type peeling test. The T-type peel test was performed as follows: the PET separator was peeled from the die-bonding layer, an exposed surface was formed on the die-bonding layer, and a backing tape (trade name "ELP BT315", manufactured by Nitto Denko Corporation) was attached to the exposed surface. The obtained crystal-cut mucous film was cut into a sample with a width of 20 mm × a length of 120 mm, which was used as a measurement sample using a tensile tester (for example, trade name "TG-1kN", manufactured by Minebea Mitsumi) , Carried out under the conditions of a temperature of 25°C and a stretching speed of 300 mm/min. In addition, the measurement of the peeling force was performed with respect to the sample for measurement before ultraviolet irradiation. The peeling force measured in the above manner is shown in Table 1 below.

(Retention evaluation) On the dicing die attach film of Example 1 obtained in the above manner, the bare wafer (diameter 300 mm) and the die dicing ring were attached while heating at a temperature of 50-80°C. Secondly, using the chip separation device DDS230 (manufactured by DISCO), the semiconductor wafer and the die bonding layer were diced, and the wafer floating after dicing was evaluated. After the bare wafer is cut into a bare chip with a length of 10 mm × a width of 10 mm × a thickness of 0.055 mm, it is ground to a thickness of 0.030 mm. Furthermore, as a bare wafer, a warped wafer is used.

The warped wafer was fabricated as described below. First, the following (a) to (f) were dissolved in methyl ethyl ketone to obtain a warpage adjusting composition having a solid content concentration of 20% by mass. (a) Acrylic resin (manufactured by Nagase Chemical Corporation, trade name "SG-70L"): 5 parts by mass (b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name "JER828"): 5 parts by mass (c) Phenolic resin (manufactured by Meiwa Chemical Co., Ltd., trade name "LDR8210"): 14 parts by mass (d) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, trade name "MEH-8005"): 2 parts by mass (e) Spherical silicon dioxide (manufactured by Admatechs, trade name "SO-25R"): 53 parts by mass (f) Phosphorus catalyst (TPP-K): 1 part by mass After that, use an applicator to apply the aforementioned warpage adjustment composition to the silicone-treated surface of a PET release liner (thickness 50 μm) with a thickness of 25 μm, and dry at 130°C for 2 minutes The solvent is removed from the aforementioned warpage adjustment combination to obtain a warpage adjustment sheet in which a warpage adjustment layer is laminated on the aforementioned release liner. After that, use a laminator (made by MCK Corporation, model MRK-600) to attach the bare wafer to the unlaminated release liner of the warpage adjustment sheet under the conditions of 60°C, 0.1 MPa, and 10 mm/s. One side is placed in an oven and heated at 175°C for 1 hour to thermally cure the resin of the warpage adjustment layer, whereby the warpage adjustment layer shrinks to obtain a warped bare wafer. After shrinking the warpage adjustment layer, a wafer processing tape (manufactured by Nitto Denko Co., Ltd., trade name "V-12SR2") is attached to one side of the warped bare wafer where the warpage adjustment layer is not laminated. ), and then fix the dicing ring to the warped bare wafer via the aforementioned wafer processing tape. After that, the warpage adjustment layer is removed from the warped bare wafer. Using a dicing device (manufactured by DISCO, model 6361), the entire surface of the warped bare wafer from which the warpage adjustment layer has been removed (hereinafter referred to as one surface) is formed in a grid pattern (width 20 μm). A groove with a surface depth of 100 μm. After that, a back polishing tape is attached to one surface of the warped bare wafer, and the wafer processing tape is removed from the other side of the warped bare wafer (the side opposite to the aforementioned one surface). After that, use a back grinder (made by DISCO, model DGP8760) to grind the warped bare wafer from the other side until the thickness of the warped bare wafer reaches 30 μm (0.030 mm). The wafer serves as a warped wafer.

Specifically, the retentivity evaluation was evaluated as follows. First, using the cold expansion unit, under the conditions of expansion temperature of -15°C, expansion speed of 200 mm/sec, and expansion amount of 11 mm, the bare wafer and die bond layer are cut to obtain a semiconductor chip with die bond layer. . Secondly, expand under the conditions of room temperature, expansion speed of 1 mm/sec, and expansion amount of 7 mm. In addition, while maintaining the expanded state, the heating temperature is 200°C, the air volume is 40 L/min, the heating distance is 20 mm, and the rotation speed is 3°/sec. Part of the diced crystal adhesive film has heat shrinkage. Secondly, while keeping the dicing ring on the dicing die attach film, observe the semiconductor wafer with die attach layer from the side of the die dicing tape (the side of the polyolefin film as the base layer), and calculate the semiconductor wafer and die bond The contact rate of the layer is used to evaluate the retention. Specifically, using VHX-6000 (manufactured by KEYENCE), a microscope photograph was taken from the side of the dicing tape, and image analysis software (ImageJ) was used to perform image analysis on the photographed microscope photograph to measure that the semiconductor wafer was not adhered The area of the floating part of the crystal layer. In addition, the area of the semiconductor chip is calculated from the size of the semiconductor chip, and the contact rate between the semiconductor chip and the die-bonding layer is calculated from the area of the semiconductor chip and the area of the non-floating part of the semiconductor chip, and the evaluation is based on the value of the contact rate Retention. The evaluation of the retention was performed based on the following evaluation criteria. ◎: The contact rate is over 90% ○: The contact rate is more than 60% and less than 90% ×: The contact rate is less than 60% The evaluation results for the retention are shown in Table 1 below.

[Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Comparative example 1 Comparative example 2 Comparative example 3 Polymer composition of adhesive layer HEA 17 17 17 35 55 20 10 60 17 INA 83 65 45 40 BA 83 EA 83 2EHA 83 63 ACMO 17 KA 90 MOI 14 14 14 25 40 14 8 54 14 HSP evaluation of adhesive layer δ _dA 15.3 16.7 16.4 18.1 17.8 16.4 13.9 18.2 18.3 |δ _dA －δ _dD | 2.1 0.7 1.0 0.7 0.4 1.0 3.5 0.8 0.9 δ _{p A} 3.7 4.8 2.7 7.1 8.1 8.0 1.9 10.9 11.0 |δ _pA －δ _pD | 8.4 7.3 9.4 6.1 4.0 4.1 10.2 1.2 1.1 δ _hA 4.2 4.4 3.7 11.0 11.4 7.4 2.8 11.8 9.3 |δ _{h A} －δ _hD | 5.5 5.3 6.0 1.2 1.7 2.4 6.9 2.1 0.4 Ra 10.9 9.2 11.3 5.4 4.4 5.2 14.2 2.9 2.2 HSP evaluation of the sticky layer δ _dD 17.4 17.4 17.4 17.4 17.4 17.4 17.4 17.4 17.4 δ _pD 12.1 12.1 12.1 12.1 12.1 12.1 12.1 12.1 12.1 δ _{h D} 9.7 9.7 9.7 9.7 9.7 9.7 9.7 9.7 9.7 Transfer amount of photopolymerization initiator [ppm] 1100 1600 1300 1600 2200 1000 800 3900 4400 Peeling force [N/20 mm] 0.54 0.73 0.54 1.24 2.46 2.61 0.31 3.10 2.14 Retention evaluation 〇 〇 〇 ◎ ◎ ◎ X ◎ ◎

It can be seen from Table 1 that in the dicing mucous films of Examples 1 to 6 in which the Hansen solubility parameter distance Ra is 3 or more and 14 or less, the retention evaluation is ○ or ◎, the retention is good, and the photopolymerization starts The transfer amount of the agent from the adhesive layer to the sticky crystal layer also becomes a relatively low value below 2200 ppm. In contrast, it can be seen that in the diced die-cutting film of Comparative Example 1 where the Hansen solubility parameter distance Ra exceeds 14, the amount of photopolymerization initiator transferred from the adhesive layer to the die-cutting layer is a low value of 800 ppm , But the retention is evaluated as ×, and the retention is poor. In addition, it can be seen that the retention evaluation of the dicing die-cutting films of Comparative Examples 2 and 3 with the Hansen solubility parameter distance Ra less than 3 is both ◎, but the amount of photopolymerization initiator transferred from the adhesive layer to the die-sticking layer becomes Higher values above 3900 ppm. From the results, it can be seen that in order to more suppress the floating of the wafer that occurs after the die bond layer is singulated, and to more inhibit the transfer of components between the die bond layer and the adhesive layer, it is necessary to make the Hansen solubility parameter distance Ra 3 or more And below 14. In addition, in Table 1, as the component transfer between the adhesive layer and the adhesive layer, only the amount of the photopolymerization initiator transferred from the adhesive layer to the adhesive layer is described, but it is expected that the same may be possible. The transfer of the curing accelerator (thermal curing catalyst) contained in the crystal bonding layer to the adhesive layer occurs. [Mutual references of related applications]

This application claims the priority of Japanese Patent Application No. 2019-230419, and is incorporated into the description of the specification of this application by reference.

1: Substrate layer 2: Adhesive layer 3: Sticky crystal layer 10: Cut crystal belt 20: slicing and sticking film G: Back grinding tape H: Holder J: Adsorption fixture P: Pin member R: Slicing ring T: Tape for wafer processing U: Jack up member W: semiconductor wafer

FIG. 1 is a cross-sectional view showing the structure of a dicing die bond film according to an embodiment of the present invention. FIG. 2A is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. FIG. 2B is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. FIG. 2C is a cross-sectional view schematically showing the back grinding process in the manufacturing method of the semiconductor integrated circuit. FIG. 2D is a cross-sectional view schematically showing the back grinding process in the manufacturing method of the semiconductor integrated circuit. FIG. 3A is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. FIG. 3B is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. FIG. 4A is a cross-sectional view schematically showing an expansion step at a low temperature in the manufacturing method of a semiconductor integrated circuit. FIG. 4B is a cross-sectional view schematically showing an expansion step at a low temperature in the manufacturing method of a semiconductor integrated circuit. 4C is a cross-sectional view schematically showing the expansion step at low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 5A is a cross-sectional view schematically showing an expansion step at room temperature in the method of manufacturing a semiconductor integrated circuit. FIG. 5B is a cross-sectional view schematically showing the expansion step at room temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 6 is a cross-sectional view schematically showing the state of the cut maintenance step in the manufacturing method of the semiconductor integrated circuit. FIG. 7 is a cross-sectional view schematically showing the state of the pickup step in the manufacturing method of the semiconductor integrated circuit.

1: Substrate layer

2: Adhesive layer

3: Sticky crystal layer

10: Cut crystal belt

20: slicing and sticking film

Claims (5)

A dicing die-cutting film comprising: a die-cutting tape laminated with an adhesive layer on a substrate layer; and a die-cutting layer laminated on the adhesive layer of the die-cutting tape; The Solubility parameter distance Ra is 3 or more and 14 or less. The Hansen solubility parameter distance Ra is represented by the Hansen solubility parameters (δ _dA , δ _pA , δ _hA ) of the adhesive layer expressed by three-dimensional coordinates and expressed by three-dimensional coordinates _{The Hansen solubility parameters (δ dD} , δ _pD , δ _hD ) of the above-mentioned sticky crystal layer are calculated using the following formula (1), [Number 1]

Among them, δ _dD and δ _dA are dispersion terms, δ _pD and δ _pA are polar terms, and δ _hD and δ _hA are hydrogen bond terms. Such as the diced chip adhesive film of claim 1, wherein the absolute value of the difference between the value _{of the dispersion term δ dA of the Hansen solubility parameter of the adhesive layer and the value of the dispersion term δ dD} of the Hansen solubility parameter of the above-mentioned adhesive layer It is 0.4 or more and 3.0 or less. Such as the diced chip adhesive film of claim 1 or 2, wherein the difference between the value of _{the polarity term δ pA of the Hansen solubility parameter of the adhesive layer and the value of the polarity term δ pD} of the Hansen solubility parameter of the above-mentioned adhesive layer The absolute value is 1.5 or more and 10.0 or less. Such as the diced wafer of claim 1 or 2, wherein the value of the hydrogen bonding term δ _{hA of the Hansen solubility parameter of the adhesive layer and the value of the hydrogen bonding term δ hD} of the Hansen solubility parameter of the above-mentioned adhesive layer The absolute value of the difference is 0.5 or more and 6.5 or less. Such as the diced wafer of claim 1 or 2, where The peeling force of the die-bonding layer with respect to the adhesive layer is 0.5 N/20 mm or more.

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