TW202204561A - Method for producing electronic device - Google Patents

Method for producing electronic device Download PDF

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Publication number
TW202204561A
TW202204561A TW110121126A TW110121126A TW202204561A TW 202204561 A TW202204561 A TW 202204561A TW 110121126 A TW110121126 A TW 110121126A TW 110121126 A TW110121126 A TW 110121126A TW 202204561 A TW202204561 A TW 202204561A
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TW
Taiwan
Prior art keywords
adhesive
adhesive film
resin layer
electronic component
film
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TW110121126A
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Chinese (zh)
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安井浩登
栗原宏嘉
木下仁
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日商三井化學東賽璐股份有限公司
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Publication of TW202204561A publication Critical patent/TW202204561A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

A method for producing an electronic device at least includes: a step (A) of preparing a structural body (100) comprising an electronic component (30) having a circuit forming surface (30A) and an adhesive film (50) attached to the circuit forming surface (30A) side of the electronic component (30); a step (B) of back grinding a surface of the electronic component (30) opposite to the circuit forming surface (30A) side; and a step (C) of removing the adhesive film (50) from the electronic component (30) after irradiating the adhesive film (50) with ultraviolet rays, wherein the adhesive film (50) comprises a base material layer (10) and an ultraviolet-curable type of adhesive resin layer (20) provided on one surface side of the base material layer (10), and in the step (C), the elongation at break of the adhesive resin layer (20) after irradiation with ultraviolet rays is 20% or more and 200% or less.

Description

電子裝置的製造方法Manufacturing method of electronic device

本發明是有關於一種電子裝置的製造方法。The present invention relates to a manufacturing method of an electronic device.

於電子裝置的製造步驟中，於研磨電子零件的步驟中，為了將電子零件固定、或防止電子零件的損傷，而於電子零件的電路形成面上貼附黏著性膜。 於此種黏著性膜中，通常使用於基材膜上積層有黏著性樹脂層的膜。In the manufacturing step of the electronic device, in the step of polishing the electronic component, in order to fix the electronic component or prevent damage to the electronic component, an adhesive film is attached to the circuit formation surface of the electronic component. In such an adhesive film, a film in which an adhesive resin layer is laminated on a base film is generally used.

隨著高密度安裝技術的進步，要求半導體晶圓等電子零件的薄厚化，要求進行薄厚加工至例如50 μm以下的厚度。 作為此種薄厚加工之一，有先切割法，即於電子零件的研磨加工之前，於電子零件的表面形成既定深度的槽，繼而藉由進行研磨將電子零件單片化。另外，有先隱形法，即於研磨加工之前，藉由向電子零件內部照射雷射而形成改質區域，繼而藉由進行研磨將電子零件單片化。With the advancement of high-density mounting technology, thinning of electronic components such as semiconductor wafers is required, and thinning processing to a thickness of 50 μm or less, for example, is required. As one of such thin-thickness processing, there is a dicing method, that is, prior to the grinding process of the electronic component, a groove of a predetermined depth is formed on the surface of the electronic component, and then the electronic component is singulated by grinding. In addition, there is a stealth-first method, that is, before polishing, a modified region is formed by irradiating the inside of the electronic component with a laser, and then the electronic component is singulated by polishing.

作為與此種先切割法、先隱形法用的黏著性膜相關的技術，例如可列舉專利文獻1（日本專利特開2014-75560號公報）及專利文獻2（日本專利特開2016-72546號公報）中記載者。Examples of technologies related to such adhesive films for the pre-cut method and pre-stealth method include Patent Document 1 (Japanese Patent Laid-Open No. 2014-75560 ) and Patent Document 2 (Japanese Patent Laid-Open No. 2016-72546 ). Bulletin).

於專利文獻1中記載了一種表面保護片材，於基材上具有黏著劑層，且滿足下述必要條件（a）～必要條件（d）。 （a）所述基材的楊氏模量為450 MPa以上 （b）所述黏著劑層於25℃下的儲存彈性係數為0.10 MPa以上 （c）所述黏著劑層於50℃下的儲存彈性係數為0.20 MPa以下 （d）所述黏著劑層的厚度為30 μm以上 於專利文獻1中記載了此種表面保護片材於工件的背面研磨步驟時抑制水自切斷工件而形成的間隙浸入工件的被保護表面（淤泥浸入），從而能夠防止工件的被保護表面的污染。Patent Document 1 describes a surface protection sheet having an adhesive layer on a base material and satisfying the following requirements (a) to (d). (a) The Young's modulus of the base material is 450 MPa or more (b) The storage elastic modulus of the adhesive layer at 25°C is 0.10 MPa or more (c) The storage elastic modulus of the adhesive layer at 50°C is 0.20 MPa or less (d) The thickness of the adhesive layer is 30 μm or more In Patent Document 1, it is described that such a surface protection sheet can prevent water from entering the protected surface of the workpiece (sludge intrusion) from the gap formed by cutting the workpiece during the back grinding step of the workpiece, thereby preventing the protected surface of the workpiece. Pollution.

於專利文獻2中記載了一種半導體晶圓表面保護用黏著膠帶，其特徵在於：具有基材樹脂膜以及形成於所述基材樹脂膜的至少單面側的放射線硬化性的黏著劑層，所述基材樹脂膜具有至少一層拉伸彈性係數為1 GPa～10 GPa的剛性層，且使所述黏著劑層放射線硬化後的剝離角度30°下的剝離力為0.1 N/25 mm～3.0 N/25 mm。 於專利文獻2中記載了藉由此種半導體晶圓表面保護用黏著膠帶，於應用了先切割法或先隱形法的半導體晶圓的背面研磨步驟中，可抑制經單片化的半導體晶片的劃痕偏離，並且於不損壞或污染半導體晶圓的情況下進行加工。 [現有技術文獻] [專利文獻]Patent Document 2 describes an adhesive tape for protecting the surface of a semiconductor wafer, comprising a base resin film and a radiation-curable adhesive layer formed on at least one side of the base resin film, The base resin film has at least one rigid layer with a tensile modulus of elasticity of 1 GPa to 10 GPa, and the adhesive layer has a peeling force of 0.1 N/25 mm to 3.0 N at a peel angle of 30° after radiation curing /25mm. In Patent Document 2, it is described that the adhesive tape for protecting the surface of a semiconductor wafer can suppress the singulation of semiconductor wafers in a back grinding step of a semiconductor wafer to which a dicing-first method or a stealth-first method is applied. Scratches are deflected and processed without damaging or contaminating the semiconductor wafer. [Prior Art Literature] [Patent Literature]

專利文獻1：日本專利特開2014-75560號公報 專利文獻2：日本專利特開2016-72546號公報Patent Document 1: Japanese Patent Laid-Open No. 2014-75560 Patent Document 2: Japanese Patent Laid-Open No. 2016-72546

[發明所欲解決之課題][The problem to be solved by the invention]

根據本發明者等人的研究，明確到例如於使用了先切割法或先隱形法等的電子裝置的製造製程中，於背面研磨步驟後自電子零件剝離黏著性膜時，於電子零件側容易產生殘膠。According to the study by the present inventors, for example, in a manufacturing process of an electronic device using a dicing-first method or a stealth-first method, etc., when the adhesive film is peeled off from the electronic component after the back grinding step, it is easy to peel off the adhesive film on the electronic component side. Residual glue is produced.

本發明是鑒於所述情況而成，提供一種電子裝置的製造方法，能夠抑制於背面研磨步驟後，自電子零件剝離黏著性膜時的電子零件側的殘膠。 [解決課題之手段]The present invention has been made in view of the above-mentioned circumstances, and provides a method of manufacturing an electronic device capable of suppressing adhesive residue on the electronic component side when peeling the adhesive film from the electronic component after the back grinding step. [Means of Solving Problems]

本發明者等人為達成所述課題反覆進行了努力研究。其結果發現藉由將照射紫外線後的黏著性樹脂層的斷裂伸長率調整為特定的範圍，能夠抑制於背面研磨步驟後，自電子零件剝離黏著性膜時的電子零件側的殘膠。The inventors of the present invention have repeatedly made intensive studies to achieve the above-mentioned problems. As a result, it was found that adhesive residue on the electronic component side when peeling the adhesive film from the electronic component after the back grinding step can be suppressed by adjusting the elongation at break of the adhesive resin layer after ultraviolet irradiation to a specific range.

根據本發明，提供一種以下所示的電子裝置的製造方法。According to this invention, the manufacturing method of the electronic device shown below is provided.

[1] 一種電子裝置的製造方法，至少包括： 步驟（A），準備結構體，所述結構體包括具有電路形成面的電子零件、以及貼合於所述電子零件的所述電路形成面側的黏著性膜； 步驟（B），對所述電子零件的與所述電路形成面側為相反側的面進行背面研磨；以及 步驟（C），對所述黏著性膜照射紫外線之後自所述電子零件除去所述黏著性膜，其中， 所述黏著性膜包括基材層以及設置於所述基材層的其中一面側的紫外線硬化型的黏著性樹脂層， 於所述步驟（C）中，照射紫外線之後的所述黏著性樹脂層的斷裂伸長率為20%以上且200%以下。 [2] 如所述[1]所述的電子裝置的製造方法，其中， 所述步驟（A）包括： 步驟（A1），選自對所述電子零件進行半切的步驟（A1-1）及對於所述電子零件照射雷射而於所述電子零件上形成改質層的步驟（A1-2）中的至少一種；以及 步驟（A2），於所述步驟（A1）之後，於所述電子零件的所述電路形成面側貼附所述黏著性膜。 [3] 如所述[1]或[2]所述的電子裝置的製造方法，其中， 於所述步驟（C）中，藉由對所述黏著性膜照射200 mJ/cm2 以上且2000 mJ/cm2 以下的劑量的紫外線，使所述黏著性樹脂層光硬化，而降低所述黏著性樹脂層的黏著力，之後自所述電子零件除去所述黏著性膜。 [4] 如所述[1]至[3]中任一項所述的電子裝置的製造方法，其中， 所述黏著性樹脂層包含分子中具有聚合性碳-碳雙鍵的(甲基)丙烯酸系樹脂以及光起始劑。 [5] 如所述[1]至[4]中任一項所述的電子裝置的製造方法，其中， 所述黏著性樹脂層的厚度為5 μm以上且300 μm以下。 [6] 如所述[1]至[5]中任一項所述的電子裝置的製造方法，其中， 構成所述基材層的樹脂包含選自聚烯烴、聚酯、聚醯胺、聚丙烯酸酯、聚甲基丙烯酸酯、聚氯乙烯、聚偏二氯乙烯、聚醯亞胺、聚醚醯亞胺、乙烯-乙酸乙烯酯共聚物、聚丙烯腈、聚碳酸酯、聚苯乙烯、離子聚合物、聚碸、聚醚碸及聚苯醚中的一種或兩種以上。 [發明的效果][1] A method of manufacturing an electronic device, comprising at least: Step (A), preparing a structure including an electronic component having a circuit-forming surface, and the circuit-forming surface side attached to the electronic component the adhesive film; step (B), performing back grinding on the surface of the electronic component on the side opposite to the circuit forming surface side; and step (C), irradiating the adhesive film with ultraviolet rays from the The electronic component removes the adhesive film, wherein the adhesive film includes a base material layer and a UV-curable adhesive resin layer disposed on one side of the base material layer, in the step (C) , the elongation at break of the adhesive resin layer after ultraviolet irradiation is 20% or more and 200% or less. [2] The method for manufacturing an electronic device according to [1], wherein the step (A) includes: a step (A1) selected from the step of half-cutting the electronic part (A1-1) and At least one of the steps (A1-2) of irradiating the electronic component with a laser to form a modified layer on the electronic component; and a step (A2), after the step (A1), on the electronic component The said adhesive film is adhered to the said circuit formation surface side of a component. [3] The method of manufacturing an electronic device according to the above [1] or [2], wherein in the step (C), the adhesive film is irradiated by 200 mJ/cm 2 or more and 2000 The ultraviolet rays at a dose of mJ/cm 2 or less photo-harden the adhesive resin layer to reduce the adhesive force of the adhesive resin layer, and then remove the adhesive film from the electronic component. [4] The method for producing an electronic device according to any one of [1] to [3], wherein the adhesive resin layer contains (methyl) having a polymerizable carbon-carbon double bond in the molecule Acrylic resin and photoinitiator. [5] The method for producing an electronic device according to any one of [1] to [4], wherein the adhesive resin layer has a thickness of 5 μm or more and 300 μm or less. [6] The method for producing an electronic device according to any one of the above [1] to [5], wherein the resin constituting the base material layer contains a resin selected from the group consisting of polyolefin, polyester, polyamide, polyamide Acrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, One or more of ionomers, polysaccharides, polyethersaccharides and polyphenylene ethers. [Effect of invention]

根據本發明，可提供一種電子裝置的製造方法，能夠抑制於背面研磨步驟後，自電子零件剝離黏著性膜時的電子零件側的殘膠。ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of an electronic device can be provided which can suppress the adhesive residue on the electronic component side when peeling an adhesive film from an electronic component after a back grinding|polishing process.

以下，對於本發明的實施形態，使用圖式進行說明。再者，於所有圖式中，對同樣的構成要素標註共通的符號，且適當地省略說明。另外，圖為概略圖，與實際的尺寸比率不一致。再者，數值範圍的「A～B」若無特別說明，則表示A以上且B以下。另外，本實施形態中，所謂「(甲基)丙烯酸」是指丙烯酸、甲基丙烯酸或者丙烯酸及甲基丙烯酸的兩者。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in all drawings, the common code|symbol is attached|subjected to the same component, and description is abbreviate|omitted suitably. In addition, the drawing is a schematic drawing, and does not match the actual size ratio. In addition, "A to B" in a numerical range means A or more and B or less unless otherwise specified. In addition, in this embodiment, "(meth)acrylic acid" means acrylic acid, methacrylic acid, or both of acrylic acid and methacrylic acid.

圖1是示意性表示本發明的實施形態的黏著性膜50的結構的一例的剖面圖。圖2的（A）至（C）是示意性地表示本發明的實施形態的電子裝置的製造方法的一例的剖面圖。 本實施形態的電子裝置的製造方法至少包括：步驟（A），準備結構體100，所述結構體100包括具有電路形成面30A的電子零件30、以及貼合於電子零件30的電路形成面30A側的黏著性膜50；步驟（B），對電子零件30的與電路形成面30A側為相反側的面進行背面研磨；以及步驟（C），對黏著性膜50照射紫外線之後自電子零件30除去黏著性膜50，其中，黏著性膜50包括基材層10以及設置於基材層10的其中一面側的紫外線硬化型的黏著性樹脂層20，並且於步驟（C）中，照射紫外線之後（紫外線硬化後）的黏著性樹脂層20的斷裂伸長率為20%以上且200%以下。 此處，紫外線硬化後的黏著性樹脂層20的斷裂伸長率是利用以下的方法測定的值。 （方法） 將黏著性樹脂層20與基材層10一同，切成長度110 mm、寬度10 mm，並以初期的夾盤間距離Lo為50 mm的方式利用拉伸試驗機（例如島津製作所，奧拓古拉夫（AUTOGRAPH）AGS-X）夾持。以30 mm/分鐘的速度拉伸樣品，將藉由目視於黏著性樹脂層20上觀測到斷裂的點作為斷裂點，將此時的夾盤間距離設為L。斷裂伸長率（%）藉由（L-Lo）/Lo×100（%）求出。 另外，關於紫外線硬化後的黏著性樹脂層20的斷裂伸長率，亦可另外準備與本實施方式的電子裝置的製造方法中使用的黏著性樹脂層20相同者，採用利用下述方法測定所述黏著性樹脂層20的斷裂伸長率而得的值。 於經電暈處理的乙烯-乙酸乙烯酯共聚物擠出膜（MFR：1.7 g/10 min、乙酸乙烯酯含量：9質量%、厚度：140 μm）的電暈處理面上，積層厚度、組成等與本實施形態的黏著性膜50的黏著性樹脂層20相同者，製作進而於該黏著性樹脂層20側積層有經矽酮脫模處理的聚對苯二甲酸乙二酯膜等脫模膜（隔離膜）的狀態下的測定用樣品。 作為積層方法，例如可列舉以下的方法。 於經矽酮脫模處理的聚對苯二甲酸乙二酯膜的脫模處理面上形成黏著性樹脂層20，繼而，於黏著性樹脂層20上貼合經電暈處理的乙烯-乙酸乙烯酯共聚物膜，獲得積層體。繼而，將所獲得的積層體於烘箱中於40℃下加熱3天，使其熟化。 繼而，自所獲得的積層體的乙烯-乙酸乙烯酯共聚物膜側，對於黏著性樹脂層20照射紫外線，使黏著性樹脂層20進行光硬化。繼而，將黏著性樹脂層20進行光硬化後的積層體切成長度110 mm、寬度10 mm，將作為隔離膜的聚對苯二甲酸乙二酯膜自積層體上剝除。 繼而，將黏著性樹脂層20與乙烯-乙酸乙烯酯共聚物膜一同，以初期的夾盤間距離Lo為50 mm的方式利用拉伸試驗機（例如島津製作所，奧拓古拉夫（AUTOGRAPH）AGS-X）夾持。以30 mm/分鐘的速度拉伸樣品，將藉由目視於黏著性樹脂層20上觀測到斷裂的點作為斷裂點，將此時的夾盤間距離設為L。斷裂伸長率（%）藉由（L-Lo）/Lo×100（%）求出。FIG. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 according to an embodiment of the present invention. (A) to (C) of FIG. 2 are cross-sectional views schematically showing an example of a method of manufacturing an electronic device according to an embodiment of the present invention. The manufacturing method of the electronic device of the present embodiment includes at least step (A) of preparing a structure 100 including an electronic component 30 having a circuit forming surface 30A and a circuit forming surface 30A attached to the electronic component 30 . the adhesive film 50 on the side; step (B), back-grinding the surface of the electronic component 30 on the opposite side to the circuit forming surface 30A; and step (C), irradiating the adhesive film 50 with ultraviolet rays from the electronic component 30 The adhesive film 50 is removed, wherein the adhesive film 50 includes the base material layer 10 and the ultraviolet curable adhesive resin layer 20 disposed on one side of the base material layer 10 , and in step (C), after irradiating ultraviolet rays The elongation at break of the adhesive resin layer 20 (after UV curing) is 20% or more and 200% or less. Here, the elongation at break of the adhesive resin layer 20 after ultraviolet curing is a value measured by the following method. (method) The adhesive resin layer 20 and the base material layer 10 are cut into a length of 110 mm and a width of 10 mm, and the initial distance Lo between the chucks is 50 mm using a tensile testing machine (for example, Shimadzu Corporation, Autoglav). (AUTOGRAPH) AGS-X) clamping. The sample was pulled at a speed of 30 mm/min, and the point at which the breakage was observed on the adhesive resin layer 20 by visual observation was taken as the breaking point, and the distance between the chucks at this time was set to L. The elongation at break (%) was obtained by (L-Lo)/Lo×100 (%). In addition, regarding the elongation at break of the adhesive resin layer 20 after UV curing, the same adhesive resin layer 20 as the adhesive resin layer 20 used in the manufacturing method of the electronic device of the present embodiment may be prepared separately and measured by the following method. The value obtained by the elongation at break of the adhesive resin layer 20 . On the corona-treated surface of a corona-treated ethylene-vinyl acetate copolymer extruded film (MFR: 1.7 g/10 min, vinyl acetate content: 9 mass %, thickness: 140 μm), the thickness and composition of the laminate It is the same as the adhesive resin layer 20 of the adhesive film 50 of the present embodiment, and the adhesive resin layer 20 side is produced and laminated with a silicone release-treated polyethylene terephthalate film or the like. A sample for measurement in the state of a film (separator). As a lamination method, the following methods are mentioned, for example. An adhesive resin layer 20 is formed on the release-treated surface of the silicone release-treated polyethylene terephthalate film, and then, corona-treated ethylene-vinyl acetate is laminated on the adhesive resin layer 20 An ester copolymer film was obtained to obtain a laminate. Next, the obtained laminated body was heated at 40 degreeC for 3 days in an oven, and was made to age. Next, the adhesive resin layer 20 was irradiated with ultraviolet rays from the ethylene-vinyl acetate copolymer film side of the obtained laminate to photocured the adhesive resin layer 20 . Next, the laminated body after photocuring the adhesive resin layer 20 was cut into a length of 110 mm and a width of 10 mm, and the polyethylene terephthalate film as a separator was peeled off from the laminated body. Next, together with the ethylene-vinyl acetate copolymer film, the adhesive resin layer 20 was subjected to a tensile testing machine (eg, Shimadzu Corporation, AUTOGRAPH) AGS- X) Clamping. The sample was pulled at a speed of 30 mm/min, and the point at which the breakage was observed on the adhesive resin layer 20 by visual observation was taken as the breaking point, and the distance between the chucks at this time was set to L. The elongation at break (%) was obtained by (L-Lo)/Lo×100 (%).

如上所述，根據本發明者等人的研究，明確到於使用了例如先切割法或先隱形法等的電子裝置的製造製程中，於背面研磨步驟後自電子零件剝離黏著性膜時，電子零件側容易產生殘膠。 其理由尚不明確，但與通常的電子零件的背面研磨步驟不同，需要自切斷後的電子零件剝離黏著性膜50，因此認為切斷後的電子零件的邊緣部容易產生殘膠。 本發明者等人為達成所述課題反覆進行了努力研究。其結果，首次發現藉由將紫外線硬化後的黏著性樹脂層20的斷裂伸長率調整為所述範圍，可抑制於背面研磨步驟後，自電子零件30剝離黏著性膜50時的電子零件30側的殘膠。As described above, according to the study by the present inventors, it has become clear that in the manufacturing process of electronic devices using, for example, the dicing-first method or the stealth-first method, when the adhesive film is peeled off from the electronic parts after the back grinding step, the electronic Residual glue is easily generated on the part side. The reason for this is not clear, but unlike a normal back-grinding step for electronic components, the adhesive film 50 needs to be peeled off from the electronic components after cutting, so it is thought that adhesive residues are likely to occur at the edges of the electronic components after cutting. The inventors of the present invention have repeatedly made intensive studies to achieve the above-mentioned problems. As a result, it was found for the first time that by adjusting the elongation at break of the adhesive resin layer 20 after ultraviolet curing to the above-mentioned range, the electronic component 30 side when the adhesive film 50 is peeled off from the electronic component 30 after the back grinding step can be suppressed. glue residue.

本實施形態的電子裝置的製造方法中，步驟（C）中照射紫外線之後的黏著性樹脂層20的斷裂伸長率為20%以上且200%以下，但就設計藉由使黏著性樹脂層20具有適度的韌性而不易產生殘膠的黏著性樹脂層20的觀點而言，調整為較佳為30%以上，更佳為40%以上，而且較佳為150%以下，更佳為100%以下，進而佳為80%以下。 步驟（C）中照射紫外線之後的黏著性樹脂層20的斷裂伸長率例如可藉由控制構成黏著性樹脂層20的黏著性樹脂或交聯劑、光起始劑的種類或調配比例、黏著性樹脂中的各單體的種類或含有比例、步驟（C）中的紫外線照射條件（例如，紫外線量、照射強度、照射時間）來控制於所述範圍內。In the manufacturing method of the electronic device of the present embodiment, the elongation at break of the adhesive resin layer 20 after irradiation with ultraviolet rays in the step (C) is 20% or more and 200% or less. From the viewpoint of the adhesive resin layer 20 having moderate toughness and not easy to produce residual glue, it is preferably adjusted to 30% or more, more preferably 40% or more, and preferably 150% or less, more preferably 100% or less, More preferably, it is 80% or less. The elongation at break of the adhesive resin layer 20 after being irradiated with ultraviolet rays in step (C) can be controlled, for example, by controlling the adhesive resin or cross-linking agent constituting the adhesive resin layer 20 , the type or mixing ratio of the photoinitiator, the adhesiveness The kind and content ratio of each monomer in the resin, and the ultraviolet irradiation conditions (for example, the amount of ultraviolet rays, the irradiation intensity, and the irradiation time) in the step (C) are controlled within the above-mentioned ranges.

1. 黏著性膜 如圖1所示，本實施形態的黏著性膜50包括基材層10以及設置於基材層10的其中一面側的紫外線硬化型的黏著性樹脂層20。1. Adhesive film As shown in FIG. 1 , the adhesive film 50 of the present embodiment includes a base material layer 10 and an ultraviolet curable adhesive resin layer 20 provided on one side of the base material layer 10 .

就機械特性與操作性的平衡而言，本實施形態的黏著性膜50整體的厚度較佳為50 μm以上且600 μm以下，更佳為50 μm以上且400 μm以下，進而佳為50 μm以上且300 μm以下。In terms of the balance between mechanical properties and handleability, the thickness of the entire adhesive film 50 of the present embodiment is preferably 50 μm or more and 600 μm or less, more preferably 50 μm or more and 400 μm or less, and still more preferably 50 μm or more. and 300 μm or less.

本實施形態的黏著性膜50亦可於無損本發明的效果的範圍內，於各層之間設置凹凸吸收性樹脂層或黏接層、抗靜電層（未圖示）等其他層。藉由凹凸吸收性樹脂層可提高黏著性膜50的凹凸吸收性。藉由黏接層可提高各層之間的黏接性。另外，藉由抗靜電層可提高黏著性膜50的抗靜電性。In the adhesive film 50 of the present embodiment, other layers such as a concavo-convex absorbent resin layer, an adhesive layer, and an antistatic layer (not shown) may be provided between the layers within a range that does not impair the effects of the present invention. The unevenness absorptivity of the adhesive film 50 can be improved by the unevenness absorptive resin layer. The adhesiveness between the layers can be improved by the adhesive layer. In addition, the antistatic property of the adhesive film 50 can be improved by the antistatic layer.

接下來，對構成本實施形態的黏著性膜50的各層進行說明。Next, each layer constituting the adhesive film 50 of the present embodiment will be described.

＜基材層＞ 基材層10是出於使黏著性膜50的操作性或機械特性、耐熱性等特性更良好的目的而設置的層。 基材層10若具有可耐受對電子零件30進行加工時所施加的外力的機械強度，則並無特別限定，例如可列舉樹脂膜。 作為構成基材層10的樹脂，例如可列舉選自以下化合物中的一種或兩種以上：聚乙烯、聚丙烯、聚(4-甲基-1-戊烯)、聚(1-丁烯)等聚烯烴；聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等聚酯；尼龍-6、尼龍-66、聚己二醯間苯二甲胺等聚醯胺；(甲基)丙烯酸系樹酯；聚氯乙烯；聚偏二氯乙烯；聚醯亞胺；聚醚醯亞胺；乙烯-乙酸乙烯酯共聚物；聚丙烯腈；聚碳酸酯；聚苯乙烯；離子聚合物；聚碸；聚醚碸；聚醚醚酮等。 該些中，就使機械物性及透明性良好的觀點而言，較佳為選自聚丙烯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚醯胺、聚醯亞胺、乙烯-乙酸乙烯酯共聚物及聚對苯二甲酸丁二酯中的一種或兩種以上，更佳為選自聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯中的一種或兩種以上。<Substrate layer> The base material layer 10 is a layer provided for the purpose of improving the handling properties of the adhesive film 50, mechanical properties, and properties such as heat resistance. The base material layer 10 is not particularly limited as long as it has mechanical strength capable of withstanding an external force applied when the electronic component 30 is processed, and examples thereof include resin films. The resin constituting the base material layer 10 may be, for example, one or two or more selected from the group consisting of polyethylene, polypropylene, poly(4-methyl-1-pentene), and poly(1-butene). Polyolefins such as polyethylene terephthalate; polyesters such as polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate; nylon-6, nylon-66, polyhexamethylene diamide-m-xylylenediamine (meth)acrylic resin; polyvinyl chloride; polyvinylidene chloride; polyimide; polyetherimide; ethylene-vinyl acetate copolymer; polyacrylonitrile; polycarbonate ; Polystyrene; Ionic polymers; Among these, from the viewpoint of improving mechanical properties and transparency, those selected from polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyimide are preferred. , one or more of ethylene-vinyl acetate copolymer and polybutylene terephthalate, more preferably one or more selected from polyethylene terephthalate, polyethylene naphthalate or two or more.

基材層10可為單層，亦可為兩種以上的層。 另外，為了形成基材層10而使用的樹脂膜的形態可為延伸膜，亦可為於單軸方向或雙軸方向上延伸的膜，但就提高基材層10的機械強度的觀點而言，較佳為於單軸方向或雙軸方向上延伸的膜。就抑制研磨後的電子零件的翹曲的觀點而言，較佳為預先對基材層10進行退火處理。為了改良與其他層的黏接性，亦可對基材層10進行表面處理。具體而言，亦可進行電暈處理、電漿處理、下塗（under coat）處理、底塗（primer coat）處理等。The base material layer 10 may be a single layer, or may be two or more layers. In addition, the form of the resin film used for forming the base material layer 10 may be a stretched film or a film extending in a uniaxial direction or a biaxial direction, but from the viewpoint of improving the mechanical strength of the base material layer 10 , preferably a film extending in a uniaxial direction or a biaxial direction. From the viewpoint of suppressing warpage of the polished electronic component, it is preferable to perform an annealing treatment on the base material layer 10 in advance. In order to improve the adhesion with other layers, the substrate layer 10 may also be subjected to surface treatment. Specifically, corona treatment, plasma treatment, under coat treatment, primer coat treatment, and the like may be performed.

就獲得良好的膜特性的觀點而言，基材層10的厚度較佳為20 μm以上且250 μm以下，更佳為30 μm以上且200 μm以下，進而佳為50 μm以上且150 μm以下。From the viewpoint of obtaining good film properties, the thickness of the base material layer 10 is preferably 20 μm or more and 250 μm or less, more preferably 30 μm or more and 200 μm or less, and still more preferably 50 μm or more and 150 μm or less.

＜黏著性樹脂層＞ 本實施形態的黏著性膜50包括紫外線硬化型的黏著性樹脂層20。 黏著性樹脂層20為設置於基材層10的其中一面側的層，且為於將黏著性膜50貼附於電子零件30的電路形成面30A上時，與電子零件30的電路形成面30A接觸而黏著的層。<Adhesive resin layer> The adhesive film 50 of this embodiment includes the adhesive resin layer 20 of an ultraviolet curable type. The adhesive resin layer 20 is a layer provided on one side of the base material layer 10 , and is used to connect the circuit forming surface 30A of the electronic component 30 when the adhesive film 50 is attached to the circuit forming surface 30A of the electronic component 30 . layers that are in contact and adhered.

構成黏著性樹脂層20的黏著劑可列舉：(甲基)丙烯酸系黏著劑、矽酮系黏著劑、胺基甲酸酯系黏著劑、烯烴系黏著劑、苯乙烯系黏著劑等。該些中，就可容易地調整黏接力的方面等而言，較佳為將(甲基)丙烯酸系樹脂作為基礎聚合物的(甲基)丙烯酸系黏著劑。As an adhesive which comprises the adhesive resin layer 20, a (meth)acrylic-type adhesive, a silicone-type adhesive, a urethane-type adhesive, an olefin-type adhesive, a styrene-type adhesive, etc. are mentioned. Among these, the (meth)acrylic-type adhesive which uses a (meth)acrylic-type resin as a base polymer is preferable from the point which can adjust the adhesive force easily.

另外，作為構成黏著性樹脂層20的黏著劑，較佳為使用藉由紫外線而使黏著力下降的紫外線交聯型黏著劑。 由紫外線交聯型黏著劑構成的黏著性樹脂層20由於藉由紫外線的照射而交聯，黏著力顯著減小，因此容易將電子零件30自黏著性膜50剝離。Moreover, as an adhesive which comprises the adhesive resin layer 20, it is preferable to use the ultraviolet-crosslinking type adhesive whose adhesive force is reduced by ultraviolet rays. The adhesive resin layer 20 made of the ultraviolet cross-linkable adhesive is cross-linked by irradiation with ultraviolet rays, and the adhesive force is significantly reduced, so that the electronic component 30 can be easily peeled off from the adhesive film 50 .

(甲基)丙烯酸系黏著劑中所含的(甲基)丙烯酸系樹脂例如可列舉：(甲基)丙烯酸酯化合物的均聚物、(甲基)丙烯酸酯化合物與共聚單體的共聚物等。(甲基)丙烯酸酯化合物例如可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸羥基乙酯、(甲基)丙烯酸羥基丙酯、(甲基)丙烯酸二甲基胺基乙酯、(甲基)丙烯酸縮水甘油酯等。該些(甲基)丙烯酸酯化合物可單獨使用一種，亦可併用兩種以上。 另外，構成(甲基)丙烯酸系共聚物的共聚單體例如可列舉：乙酸乙烯酯、(甲基)丙烯腈、苯乙烯、(甲基)丙烯酸、衣康酸、(甲基)丙烯醯胺、羥甲基(甲基)丙烯醯胺、馬來酸酐等。該些共聚單體可單獨使用一種，亦可併用兩種以上。The (meth)acrylic resin contained in the (meth)acrylic adhesive includes, for example, a homopolymer of a (meth)acrylate compound, a copolymer of a (meth)acrylate compound and a comonomer, and the like. . For example, the (meth)acrylate compound includes methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylate base) hydroxyethyl acrylate, hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate, and the like. These (meth)acrylate compounds may be used alone or in combination of two or more. In addition, examples of comonomers constituting the (meth)acrylic copolymer include vinyl acetate, (meth)acrylonitrile, styrene, (meth)acrylic acid, itaconic acid, and (meth)acrylamide. , hydroxymethyl (meth) acrylamide, maleic anhydride, etc. These comonomers may be used alone or in combination of two or more.

紫外線交聯型的(甲基)丙烯酸系黏著劑可例示如下的黏著劑，其包含分子中具有聚合性碳-碳雙鍵的(甲基)丙烯酸系樹脂、及光起始劑，且所述黏著劑視需要藉由交聯劑而使所述(甲基)丙烯酸系樹脂進行交聯而獲得。紫外線交聯型的(甲基)丙烯酸系黏著劑亦可更包含於分子內具有兩個以上的聚合性碳-碳雙鍵的低分子量化合物。The ultraviolet-crosslinkable (meth)acrylic adhesive can be exemplified by an adhesive containing a (meth)acrylic resin having a polymerizable carbon-carbon double bond in the molecule, and a photoinitiator, and the The adhesive is obtained by crosslinking the (meth)acrylic resin with a crosslinking agent as needed. The ultraviolet-crosslinking type (meth)acrylic adhesive may further include a low-molecular-weight compound having two or more polymerizable carbon-carbon double bonds in the molecule.

分子中具有聚合性碳-碳雙鍵的(甲基)丙烯酸系樹脂具體而言是以如下方式獲得。首先，使具有乙烯性雙鍵的單體與具有官能基（P）的共聚合性單體進行共聚合。繼而，使該共聚物中所含的官能基（P）和具有可與該官能基（P）產生加成反應、縮合反應等的官能基（Q）的單體，以殘留該單體中的雙鍵的狀態進行反應，於共聚物分子中導入聚合性碳-碳雙鍵。Specifically, the (meth)acrylic resin having a polymerizable carbon-carbon double bond in the molecule is obtained as follows. First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Then, the functional group (P) contained in the copolymer and a monomer having a functional group (Q) that can undergo an addition reaction, condensation reaction, etc. with the functional group (P) are made to remain in the monomer. The state of the double bond is reacted, and a polymerizable carbon-carbon double bond is introduced into the copolymer molecule.

作為所述具有乙烯性雙鍵的單體，例如自(甲基)丙烯酸甲酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸乙酯等丙烯酸烷基酯及甲基丙烯酸烷基酯單體、乙酸乙烯酯之類的乙烯酯、(甲基)丙烯腈、(甲基)丙烯醯胺、苯乙烯等具有乙烯性雙鍵的單體中，使用一種或兩種以上。Examples of the monomer having an ethylenic double bond include methyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, butyl (meth)acrylate, and ethyl (meth)acrylate. Monomers such as alkyl acrylate and alkyl methacrylate, vinyl esters such as vinyl acetate, (meth)acrylonitrile, (meth)acrylamide, styrene and other monomers with vinyl double bonds Among them, one or two or more are used.

所述具有官能基（P）的共聚合性單體可列舉：(甲基)丙烯酸、馬來酸、(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸縮水甘油酯、N-羥甲基(甲基)丙烯醯胺、(甲基)丙烯醯氧基乙基異氰酸酯等。該些可為一種，亦可將兩種以上組合使用。 所述具有乙烯性雙鍵的單體與具有官能基（P）的共聚合性單體的比例較佳為，所述具有乙烯性雙鍵的單體為70質量%～99質量%，具有官能基（P）的共聚合性單體為1質量%～30質量%。進而佳為，所述具有乙烯性雙鍵的單體為80質量%～95質量%，具有官能基（P）的共聚合性單體為5質量%～20質量%。 所述具有官能基（Q）的單體例如可列舉與所述具有官能基（P）的共聚合性單體相同的單體。Examples of the copolymerizable monomer having a functional group (P) include (meth)acrylic acid, maleic acid, 2-hydroxyethyl (meth)acrylate, glycidyl (meth)acrylate, N- Methylol (meth)acrylamide, (meth)acryloyloxyethyl isocyanate, etc. These may be one type, or two or more types may be used in combination. The ratio of the monomer having an ethylenic double bond to the copolymerizable monomer having a functional group (P) is preferably such that the monomer having an ethylenic double bond is 70% by mass to 99% by mass and has a functional group (P). The copolymerizable monomer of the group (P) is 1% by mass to 30% by mass. Furthermore, it is preferable that the monomer which has the said ethylenic double bond is 80 mass % - 95 mass %, and the copolymerizable monomer which has a functional group (P) is 5 mass % - 20 mass %. Examples of the monomer having the functional group (Q) include the same monomers as the copolymerizable monomer having the functional group (P).

於具有乙烯性雙鍵的單體與具有官能基（P）的共聚合性單體的共聚物中，導入聚合性碳-碳雙鍵時進行反應的官能基（P）與官能基（Q）的組合理想為羧基與環氧基、羧基與氮丙啶基、羥基與異氰酸酯基等容易產生加成反應的組合。另外，並不限於加成反應，只要為羧酸基與羥基的縮合反應等可容易地導入聚合性碳-碳雙鍵的反應，則可使用任意的反應。In a copolymer of a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P), a functional group (P) and a functional group (Q) that react when a polymerizable carbon-carbon double bond is introduced The ideal combination is a combination of carboxyl group and epoxy group, carboxyl group and aziridine group, hydroxyl group and isocyanate group, etc., which is easy to generate addition reaction. Moreover, it is not limited to an addition reaction, Any reaction can be used as long as it is a reaction which can easily introduce a polymerizable carbon-carbon double bond, such as a condensation reaction of a carboxylic acid group and a hydroxyl group.

作為分子中具有兩個以上的聚合性碳-碳雙鍵的低分子量化合物，例如可列舉：三丙二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二-三羥甲基丙烷四丙烯酸酯等。該些可使用一種或兩種以上。相對於所述(甲基)丙烯酸系樹脂100質量份，分子中具有兩個以上的聚合性碳-碳雙鍵的低分子量化合物的添加量較佳為0.1質量份～20質量份，更佳為5質量份～18質量份。Examples of low molecular weight compounds having two or more polymerizable carbon-carbon double bonds in the molecule include tripropylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylol Methane tetraacrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, di-trimethylolpropane tetraacrylate, etc. One or two or more of these can be used. The addition amount of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 20 parts by mass relative to 100 parts by mass of the (meth)acrylic resin. 5 parts by mass to 18 parts by mass.

光起始劑例如可列舉：安息香、異丙基安息香醚、異丁基安息香醚、二苯甲酮、米其勒酮（Michler's ketone）、氯硫雜蒽酮、十二烷基硫雜蒽酮、二甲基硫雜蒽酮、二乙基硫雜蒽酮、苯乙酮二乙基縮酮、苄基二甲基縮酮、1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、2-苄基-2-二甲基胺基-4'-嗎啉代苯丁酮、2,2-二甲氧基-2-苯基苯乙酮、2-二甲基胺基-2-(4-甲基苄基)-1-(4-嗎啉-4-基-苯基)丁烷-1-酮等。該些可使用一種或兩種以上。相對於所述(甲基)丙烯酸系樹脂100質量份，光起始劑的添加量較佳為0.1質量份～15質量份，更佳為1質量份～10質量份，進而佳為4質量份～10質量份。Examples of the photoinitiator include benzoin, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, and dodecylthioxanthone , dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl ketal Alkyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4'-morpholino acetophenone, 2,2-dimethoxy-2-phenylphenethyl ketone, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)butan-1-one, and the like. One or two or more of these can be used. The addition amount of the photoinitiator is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, and still more preferably 4 parts by mass relative to 100 parts by mass of the (meth)acrylic resin. ~10 parts by mass.

所述紫外線硬化型黏著劑中亦可添加交聯劑。交聯劑例如可列舉：山梨糖醇聚縮水甘油醚、聚丙三醇聚縮水甘油醚、季戊四醇聚縮水甘油醚、二丙三醇聚縮水甘油醚等環氧系化合物，四羥甲基甲烷-三-β-氮丙啶基丙酸酯、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶羧基醯胺)、N,N'-六亞甲基-1,6-雙(1-氮丙啶羧基醯胺)等氮丙啶系化合物，四亞甲基二異氰酸酯、六亞甲基二異氰酸酯、聚異氰酸酯等異氰酸酯系化合物等。所述紫外線硬化型黏著劑可為溶劑類型、乳膠類型、熱熔類型等的任一種。A cross-linking agent may also be added to the UV-curable adhesive. Examples of the crosslinking agent include epoxy-based compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglyceryl polyglycidyl ether, tetramethylolmethane-triglycidyl ether, and the like. -β-aziridine propionate, trimethylolpropane-tri-β-aziridine propionate, N,N'-diphenylmethane-4,4'-bis(1-aziridine aziridine-based compounds such as pyridinecarboxyamide), N,N'-hexamethylene-1,6-bis(1-aziridinecarboxyamide), tetramethylene diisocyanate, hexamethylene diisocyanate Isocyanate-based compounds such as isocyanates and polyisocyanates, and the like. The UV-curable adhesive may be any of a solvent type, a latex type, a hot melt type, and the like.

交聯劑的含量通常較佳為交聯劑中的官能基數不會多於(甲基)丙烯酸系樹脂中的官能基數的程度的範圍。但是，於交聯反應中新產生官能基的情況、或交聯反應緩慢的情況等，視需要亦可過量地含有。 就提高黏著性樹脂層20的耐熱性或與密合力的平衡的觀點而言，相對於(甲基)丙烯酸系樹脂100質量份，(甲基)丙烯酸系黏著劑中的交聯劑的含量較佳為0.1質量份以上且15質量份以下，更佳為0.5質量份以上且5質量份以下。The content of the crosslinking agent is usually preferably within a range in which the number of functional groups in the crosslinking agent does not exceed the number of functional groups in the (meth)acrylic resin. However, when a functional group is newly generated during the crosslinking reaction, or when the crosslinking reaction is slow, it may be contained in excess if necessary. From the viewpoint of improving the heat resistance of the adhesive resin layer 20 or the balance with the adhesive force, the content of the crosslinking agent in the (meth)acrylic adhesive is relatively high relative to 100 parts by mass of the (meth)acrylic resin. Preferably it is 0.1 mass part or more and 15 mass parts or less, More preferably, it is 0.5 mass part or more and 5 mass parts or less.

黏著性樹脂層20例如可藉由於基材層10上塗佈黏著劑塗佈液而形成。 作為塗佈黏著劑塗佈液的方法，例如可採用輥塗佈機法、反向輥塗佈機法、凹版輥法、棒塗法、缺角輪塗佈機法、模塗佈機法等現有公知的塗佈方法。所塗佈的黏著劑的乾燥條件並無特別限制，通常較佳為於80℃～200℃的溫度範圍內乾燥10秒～10分鐘。進而佳為於80℃～170℃下乾燥15秒～5分鐘。為了充分促進交聯劑與(甲基)丙烯酸系樹脂的交聯反應，亦可於黏著劑塗佈液的乾燥結束後，於40℃～80℃下加熱5小時～300小時左右。The adhesive resin layer 20 can be formed by, for example, applying an adhesive coating liquid on the base material layer 10 . As a method of applying the adhesive coating liquid, for example, a roll coater method, a reverse roll coater method, a gravure roll method, a bar coater method, a notch coater method, a die coater method, etc. can be used There are known coating methods. The drying conditions of the applied adhesive are not particularly limited, but are usually preferably dried in a temperature range of 80°C to 200°C for 10 seconds to 10 minutes. More preferably, it is dried for 15 seconds to 5 minutes at 80°C to 170°C. In order to fully promote the crosslinking reaction of the crosslinking agent and the (meth)acrylic resin, after drying of the adhesive coating liquid is completed, it may be heated at 40°C to 80°C for about 5 hours to 300 hours.

本實施形態的黏著性膜50中，黏著性樹脂層20的厚度較佳為5 μm以上且300 μm以下，更佳為10 μm以上且100 μm以下，進而佳為10 μm以上且50 μm以下。若黏著性樹脂層20的厚度為所述範圍內，則對電子零件30的表面的黏著性與操作性的平衡良好。In the adhesive film 50 of the present embodiment, the thickness of the adhesive resin layer 20 is preferably 5 μm or more and 300 μm or less, more preferably 10 μm or more and 100 μm or less, and still more preferably 10 μm or more and 50 μm or less. When the thickness of the adhesive resin layer 20 is within the above-mentioned range, the balance between the adhesiveness to the surface of the electronic component 30 and the handleability is favorable.

2. 電子裝置的製造方法 本實施形態的電子裝置的製造方法至少包括以下三個步驟。 （A）準備結構體100的步驟，所述結構體100包括具有電路形成面30A的電子零件30及貼合於電子零件30的電路形成面30A側的黏著性膜50； （B）對電子零件30的與電路形成面30A側為相反側的面進行背面研磨的步驟；以及 （C）對黏著性膜50照射紫外線之後自電子零件30除去黏著性膜50的步驟。 而且，其特徵在於，於步驟（C）中，照射紫外線之後的黏著性樹脂層20的斷裂伸長率為20%以上且200%以下。 以下，對本實施形態的電子裝置的製造方法的各步驟進行說明。2. Manufacturing method of electronic device The manufacturing method of the electronic device of the present embodiment includes at least the following three steps. (A) the step of preparing the structure 100 including the electronic component 30 having the circuit forming surface 30A and the adhesive film 50 attached to the circuit forming surface 30A side of the electronic component 30 ; (B) a step of back grinding the surface of the electronic component 30 on the opposite side to the circuit forming surface 30A; and (C) The step of removing the adhesive film 50 from the electronic component 30 after irradiating the adhesive film 50 with ultraviolet rays. Moreover, it is characterized in that, in step (C), the breaking elongation of the adhesive resin layer 20 after ultraviolet irradiation is 20% or more and 200% or less. Hereinafter, each step of the manufacturing method of the electronic device of the present embodiment will be described.

（步驟（A）） 首先，準備如下的結構體100，所述結構體100包括：具有電路形成面30A的電子零件30；及貼合於電子零件30的電路形成面30A側的黏著性膜50。 此種結構體100例如可藉由將脫模膜自黏著性膜50的黏著性樹脂層20剝離，使黏著性樹脂層20的表面露出，並於該黏著性樹脂層20上貼附電子零件30的電路形成面30A來製作。(step (A)) First, the structure 100 including the electronic component 30 having the circuit forming surface 30A and the adhesive film 50 bonded to the circuit forming surface 30A side of the electronic component 30 is prepared. Such a structure 100 can be, for example, peeled off from the adhesive resin layer 20 of the adhesive film 50 by a release film to expose the surface of the adhesive resin layer 20 , and the electronic component 30 can be attached to the adhesive resin layer 20 . The circuit formation surface 30A is produced.

此處，於黏著性膜50上貼附電子零件30的電路形成面30A時的條件並無特別限定，例如，溫度可設為20℃～80℃，壓力可設為0.05 MPa～0.5 MPa，貼附速度可設為0.5 mm/秒～20 mm/秒。Here, the conditions for adhering the circuit forming surface 30A of the electronic component 30 to the adhesive film 50 are not particularly limited. For example, the temperature can be set to 20° C. to 80° C. The attachment speed can be set from 0.5 mm/sec to 20 mm/sec.

步驟（A）較佳為更包括：選自對電子零件30進行半切的步驟（A1-1）及對於電子零件30照射雷射而於電子零件30上形成改質層的步驟（A1-2）中的至少一種的步驟（A1），以及於步驟（A1）之後於電子零件30的電路形成面30A側貼附黏著性膜50的步驟（A2）。 如上所述，於使用了先切割法或先隱形法等的電子裝置的製造製程中，於背面研磨步驟後自電子零件30剝離黏著性膜50時，於電子零件30側容易產生殘膠，因此於使用了先切割法或先隱形法等的電子裝置的製造製程中，可適宜地應用本實施形態的電子裝置的製造方法。因此，較佳為進行成為先切割法的所述步驟（A1-1）或成為先隱形法的所述步驟（A1-2）的製造方法。The step (A) preferably further comprises: a step (A1-1) selected from half-cutting the electronic part 30 and a step (A1-2) of irradiating a laser on the electronic part 30 to form a modified layer on the electronic part 30 At least one of the step (A1) and the step (A2) of attaching the adhesive film 50 to the circuit forming surface 30A side of the electronic component 30 after the step (A1). As described above, in the manufacturing process of an electronic device using the dicing-first method or the stealth-first method, etc., when the adhesive film 50 is peeled off from the electronic component 30 after the back grinding step, adhesive residue is likely to be generated on the electronic component 30 side. The manufacturing method of the electronic device of this embodiment can be suitably applied to the manufacturing process of the electronic device using the dicing-first method, the stealth-first method, or the like. Therefore, it is preferable to perform the manufacturing method of the said step (A1-1) which becomes the first dicing method or the said step (A1-2) which becomes the first stealth method.

於步驟（A2）中，可將黏著性膜50加溫並貼附於電子零件30的電路形成面30A上。藉此，可長時間地使黏著性樹脂層20與電子零件30的黏接狀態良好。加溫溫度並無特別限定，例如為60℃～80℃。In step (A2), the adhesive film 50 can be heated and attached to the circuit forming surface 30A of the electronic component 30 . Thereby, the adhesive state of the adhesive resin layer 20 and the electronic component 30 can be made favorable for a long time. The heating temperature is not particularly limited, but is, for example, 60°C to 80°C.

將黏著性膜50貼附於電子零件上的操作亦有利用人手來進行的情況，但通常可利用安裝有卷狀黏著性膜的被稱為自動黏貼機的裝置來進行。The operation of attaching the adhesive film 50 to the electronic component may be performed manually, but it is usually performed by a device called an automatic sticker on which a roll-shaped adhesive film is attached.

貼附於黏著性膜50上的電子零件30並無特別限定，較佳為具有電路形成面30A的電子零件30。例如可列舉半導體晶圓、環氧模製晶圓、模製面板、模製陣列封裝（molding array package）、半導體基板等，較佳為半導體晶圓及環氧模製晶圓。 另外，半導體晶圓例如可列舉矽晶圓、藍寶石晶圓、鍺晶圓、鍺-砷晶圓、鎵-磷晶圓、鎵-砷-鋁晶圓、鎵-砷晶圓、鉭酸鋰晶圓等，但適宜地使用矽晶圓。環氧模製晶圓可列舉藉由作為扇出（fan-out）型晶圓級封裝（Wafer Level Packaging，WLP）的製作方法之一的嵌入式晶圓級球柵陣列（Embedded Wafer Level Ball Grid Array，EWLB）製程而製作的晶圓。 具有電路形成面的半導體晶圓及環氧模製晶圓並無特別限定，例如使用表面形成有配線、電容器、二極體或電晶體等電路者。另外，亦可對電路形成面進行電漿處理。The electronic component 30 attached to the adhesive film 50 is not particularly limited, but is preferably the electronic component 30 having the circuit forming surface 30A. For example, a semiconductor wafer, an epoxy-molded wafer, a molded panel, a molding array package, a semiconductor substrate, etc. are mentioned, and a semiconductor wafer and an epoxy-molded wafer are preferable. In addition, examples of semiconductor wafers include silicon wafers, sapphire wafers, germanium wafers, germanium-arsenic wafers, gallium-phosphorus wafers, gallium-arsenic-aluminum wafers, gallium-arsenic wafers, and lithium tantalate crystals. circle, etc., but silicon wafers are suitably used. Epoxy-molded wafers include embedded wafer level ball grid array (Embedded Wafer Level Ball Grid), which is one of the fabrication methods of fan-out type wafer level packaging (WLP). Array, EWLB) process wafers. The semiconductor wafer and epoxy-molded wafer having a circuit forming surface are not particularly limited, and for example, those having circuits such as wirings, capacitors, diodes, and transistors formed on the surface are used. In addition, plasma treatment may be performed on the circuit formation surface.

電子零件30的電路形成面30A例如可藉由具有凸塊電極等而成為凹凸面。 另外，凸塊電極例如為將電子裝置安裝於安裝面時，相對於安裝面上所形成的電極而接合，並形成電子裝置與安裝面（印刷基板等的安裝面）之間的電性連接者。 凸塊電極例如可列舉：球狀凸塊（ball bump）、印刷凸塊、螺柱凸塊（stud bump）、鍍覆凸塊、柱形凸塊（pillar bump）等凸塊電極。即，凸塊電極通常為凸電極。該些凸塊電極可單獨使用一種，亦可併用兩種以上。 凸塊電極的高度及直徑並無特別限定，分別較佳為10 μm～400 μm，更佳為50 μm～300 μm。此時的凸塊間距亦無特別限定，較佳為20 μm～600 μm，更佳為100 μm～500 μm。 另外，構成凸塊電極的金屬種並無特別限定，例如可列舉：焊料、銀、金、銅、錫、鉛、鉍及該些的合金等，但黏著性膜50適宜地用於凸塊電極為焊料凸塊的情形。該些金屬種可單獨使用一種，亦可併用兩種以上。The circuit formation surface 30A of the electronic component 30 can be a concavo-convex surface by having bump electrodes or the like, for example. In addition, when the electronic device is mounted on the mounting surface, for example, the bump electrodes are bonded to electrodes formed on the mounting surface, and form an electrical connection between the electronic device and the mounting surface (mounting surface such as a printed circuit board). . Examples of the bump electrodes include bump electrodes such as ball bumps, printed bumps, stud bumps, plated bumps, and pillar bumps. That is, the bump electrodes are generally bump electrodes. These bump electrodes may be used alone or in combination of two or more. The height and diameter of the bump electrodes are not particularly limited, but are preferably 10 μm to 400 μm, respectively, and more preferably 50 μm to 300 μm. The bump pitch at this time is also not particularly limited, but is preferably 20 μm to 600 μm, more preferably 100 μm to 500 μm. In addition, the metal species constituting the bump electrodes is not particularly limited, and examples thereof include solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof. The adhesive film 50 is preferably used for the bump electrodes. In the case of solder bumps. These metal species may be used alone or in combination of two or more.

（步驟（B）） 繼而，對電子零件30的與電路形成面30A側為相反側的面（亦稱為背面）進行背面研磨。 此處，所謂背面研磨，是指於不會使電子零件破損的情況下，進行薄化加工至既定的厚度為止。 例如，於研磨機的夾盤工作台（chuck table）等上固定結構體100，對電子零件的背面（電路非形成面）進行研磨。(step (B)) Next, the surface (also referred to as the back surface) on the opposite side to the circuit forming surface 30A side of the electronic component 30 is back-polished. Here, back-grinding refers to thinning processing to a predetermined thickness without damaging electronic components. For example, the structural body 100 is fixed to a chuck table of a polishing machine or the like, and the back surface (circuit non-formation surface) of the electronic component is polished.

於此種背面研磨操作中，將電子零件30研磨至厚度成為所期望的厚度以下為止。研磨前的電子零件的厚度是根據電子零件30的直徑、種類等來適當決定，研磨後的電子零件30的厚度是根據所獲得的晶片的尺寸、電路的種類等來適當決定。 另外，於電子零件30被半切，或者藉由雷射照射而形成有改質層的情況下，如圖1所示藉由步驟（B）將電子零件30單片化。In such a back grinding operation, the electronic component 30 is ground until the thickness is equal to or less than a desired thickness. The thickness of the electronic component before polishing is appropriately determined according to the diameter, type, etc. of the electronic component 30 , and the thickness of the electronic component 30 after polishing is appropriately determined according to the size of the obtained wafer, the type of circuit, and the like. In addition, when the electronic component 30 is half-cut or a modified layer is formed by laser irradiation, the electronic component 30 is singulated by step (B) as shown in FIG. 1 .

背面研磨方式並無特別限定，可採用公知的研磨方式。各種研磨可一面將水供給至電子零件與研磨石上而冷卻一面進行。視需要可於研磨步驟的最後進行作為不使用研磨水的研磨方式的乾式拋光（dry polishing）步驟。背面研磨結束後，視需要進行化學蝕刻。化學蝕刻是利用以下等方法來進行：於選自由包含氫氟酸、硝酸、硫酸、乙酸等單獨或者混合液的酸性水溶液，氫氧化鉀水溶液、氫氧化鈉水溶液等鹼性水溶液所組成的群組中的蝕刻液中，以黏貼有黏著性膜50的狀態浸漬電子零件。該蝕刻是出於電子零件背面所產生的應變的去除、電子零件的進一步薄層化、氧化膜等的去除、將電極形成於背面時的預處理等的目的而進行。蝕刻液是根據所述目的來適當選擇。The back grinding method is not particularly limited, and a known grinding method can be employed. Various grindings can be performed while supplying water to the electronic parts and the grinding stone and cooling. If necessary, a dry polishing step as a polishing method that does not use polishing water may be performed at the end of the polishing step. After the back grinding is completed, chemical etching is performed if necessary. Chemical etching is carried out by the following methods: in the group consisting of an acidic aqueous solution containing hydrofluoric acid, nitric acid, sulfuric acid, acetic acid, etc. alone or in mixture, an alkaline aqueous solution such as potassium hydroxide aqueous solution, sodium hydroxide aqueous solution, etc. The electronic component is immersed in the etching liquid in the state where the adhesive film 50 is adhered. This etching is performed for the purpose of removing the strain generated on the back surface of the electronic component, further reducing the thickness of the electronic component, removing oxide films and the like, and preprocessing when forming electrodes on the back surface. The etching solution is appropriately selected according to the purpose.

（步驟（C）） 繼而，於對黏著性膜50照射紫外線之後自電子零件30除去黏著性膜50。於步驟（C）中，藉由對黏著性膜50照射例如200 mJ/cm2 以上且2000 mJ/cm2 以下的劑量的紫外線，使黏著性樹脂層20光硬化，而降低黏著性樹脂層20的黏著力，之後自電子零件30除去黏著性膜50。 另外，紫外線照射例如可使用高壓水銀燈並使用主波長365 nm的紫外線來進行。 紫外線的照射強度例如為50 mW/cm2 以上且500 mW/cm2 以下。(Step (C)) Next, after irradiating the adhesive film 50 with ultraviolet rays, the adhesive film 50 is removed from the electronic component 30 . In step (C), by irradiating the adhesive film 50 with ultraviolet rays at a dose of, for example, 200 mJ/cm 2 or more and 2000 mJ/cm 2 or less, the adhesive resin layer 20 is photohardened, and the adhesive resin layer 20 is lowered. The adhesive force is obtained, and then the adhesive film 50 is removed from the electronic component 30 . In addition, ultraviolet irradiation can be performed using, for example, a high-pressure mercury lamp and ultraviolet rays having a dominant wavelength of 365 nm. The irradiation intensity of the ultraviolet rays is, for example, 50 mW/cm 2 or more and 500 mW/cm 2 or less.

於自電子零件30除去黏著性膜之前，亦可於切割膠帶或帶有晶粒附接膜的切割膠帶上裝配電子零件30。自電子零件30除去黏著性膜50的操作亦有利用人手來進行的情況，但通常可利用被稱為自動剝除機的裝置來進行。 剝離了黏著性膜50之後的電子零件30的表面視需要亦可進行清洗。清洗方法可列舉：水清洗、溶劑清洗等濕式清洗；電漿清洗等乾式清洗等。於濕式清洗的情況下，亦可併用超音波清洗。該些清洗方法可根據電子零件表面的污染狀況來適當選擇。The electronic part 30 may also be assembled on dicing tape or dicing tape with a die attach film before the adhesive film is removed from the electronic part 30 . The operation of removing the adhesive film 50 from the electronic component 30 may be performed manually, but it is usually performed by a device called an automatic peeler. The surface of the electronic component 30 after peeling off the adhesive film 50 may be cleaned as needed. Examples of cleaning methods include wet cleaning such as water cleaning and solvent cleaning, and dry cleaning such as plasma cleaning. In the case of wet cleaning, ultrasonic cleaning can also be used together. These cleaning methods can be appropriately selected according to the contamination condition of the surface of the electronic parts.

（其他步驟） 進行了步驟（A）～步驟（C）之後，亦可進而進行將所獲得的半導體晶片安裝於電路基板上的步驟等。該些步驟可基於公知的資訊來進行。(other steps) After steps (A) to (C) are performed, a step of mounting the obtained semiconductor wafer on a circuit board and the like may be further performed. These steps can be performed based on known information.

以上，對本發明的較佳實施形態進行了敘述，但該些為本發明的例示，亦可採用所述以外的多種構成。 [實施例]The preferred embodiments of the present invention have been described above, but these are examples of the present invention, and various configurations other than those described above may be employed. [Example]

以下，藉由實施例及比較例來對本發明進行具體說明，但本發明並不限定於此。 與黏著性膜的製作有關的詳情如以下所述。Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples, but the present invention is not limited thereto. Details about the production of the adhesive film are as follows.

＜基材層＞ 基材層1：聚對苯二甲酸乙二酯膜（東洋紡公司製造，製品名：E7180，厚度：50 μm，單面電暈處理品）<Substrate layer> Base material layer 1: polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 μm, single-sided corona-treated product)

基材層2：包含低密度聚乙烯膜/聚對苯二甲酸乙二酯膜/低密度聚乙烯膜的積層膜（總厚度：110 μm） 於聚對苯二甲酸乙二酯膜（東麗公司製造，製品名：露米勒（LUMIRROR）S10，厚度：50 μm）的兩側層壓低密度聚乙烯膜（密度：0.925 kg/m3 ，厚度：30 μm）而獲得。對所獲得的積層膜的單側實施電暈處理。Substrate layer 2: Laminated film comprising low density polyethylene film/polyethylene terephthalate film/low density polyethylene film (total thickness: 110 μm) on polyethylene terephthalate film (Toray It is obtained by laminating low-density polyethylene film (density: 0.925 kg/m 3 , thickness: 30 μm) on both sides of the company, product name: LUMIRROR S10, thickness: 50 μm. Corona treatment was performed on one side of the obtained laminated film.

基材層3：包含聚對苯二甲酸乙二酯膜/乙烯-乙酸乙烯酯共聚物膜/丙烯酸膜的積層膜（總厚度：145 μm） 將聚對苯二甲酸乙二酯膜（東洋紡公司製造，製品名：E7180，厚度：50 μm）與乙烯-乙酸乙烯酯共聚物（三井陶氏聚合化學（MITSUI DOW POLYCHEMICAL）股份有限公司製造，MFR：2.5 g/10分鐘）膜（厚度：70 μm）藉由於乙烯-乙酸乙烯酯共聚物膜的與聚對苯二甲酸乙二酯膜的貼合面側實施電暈處理來進行積層。進而，對乙烯-乙酸乙烯酯共聚物膜的聚對苯二甲酸乙二酯膜的相反面側亦實施電暈處理。 接著，於經脫模處理的聚對苯二甲酸乙二酯膜（隔離膜）的脫模面上將如下所示的基材用的丙烯酸系樹脂塗佈液以乾燥厚度成為20 μm的方式進行塗佈並加以乾燥，並經由乙烯-乙酸乙烯酯共聚物膜貼合於所述包含聚對苯二甲酸乙二酯膜/乙烯-乙酸乙烯酯共聚物膜的積層膜上，並進行熟化（40℃，3天）。繼而，剝離隔離膜，獲得基材層3。Substrate layer 3: Laminated film comprising polyethylene terephthalate film/ethylene-vinyl acetate copolymer film/acrylic film (total thickness: 145 μm) A polyethylene terephthalate film (manufactured by Toyobo Co., Ltd., product name: E7180, thickness: 50 μm) and ethylene-vinyl acetate copolymer (manufactured by MITSUI DOW POLYCHEMICAL Co., Ltd., MFR : 2.5 g/10 minutes) film (thickness: 70 μm), which was laminated by corona treatment on the bonding surface side of the ethylene-vinyl acetate copolymer film and the polyethylene terephthalate film. Furthermore, corona treatment was also performed on the opposite surface side of the polyethylene terephthalate film of the ethylene-vinyl acetate copolymer film. Next, on the release surface of the polyethylene terephthalate film (separator film) subjected to the release treatment, the acrylic resin coating liquid for the base material shown below was applied so as to have a dry thickness of 20 μm. Coated and dried, and attached to the laminate film comprising the polyethylene terephthalate film/ethylene-vinyl acetate copolymer film via the ethylene-vinyl acetate copolymer film, and cured (40 °C, 3 days). Next, the separator was peeled off to obtain the base material layer 3 .

＜基材用的丙烯酸系樹脂塗佈液＞ 使用作為聚合起始劑的4,4'-偶氮雙-4-氰基戊酸（大塚化學公司製造，製品名：ACVA）0.5質量份，將丙烯酸丁酯74質量份、甲基丙烯酸甲酯14質量份、甲基丙烯酸-2-羥基乙酯9質量份、甲基丙烯酸2質量份、丙烯醯胺1質量份、聚氧乙烯壬基丙烯基苯基醚硫酸銨的水溶液（第一工業製藥公司製造，製品名：阿庫隆（AQUARON）HS-1025）3質量份於去離子水中於70℃下乳化聚合9小時。聚合結束後，利用氨水調整為PH=7，獲得固體成分濃度42.5%的丙烯酸聚合物水系乳液。接下來，相對於所述丙烯酸聚合物水系乳液100質量份，使用氨水調整為PH=9以上，同時調配氮丙啶系交聯劑﹝日本觸媒化學工業製造，凱美特（CHEMITITE）PZ-33﹞0.75質量份及二乙二醇單丁醚5質量份，獲得基材用的塗佈液。<Acrylic resin coating liquid for base material> Using 0.5 parts by mass of 4,4'-azobis-4-cyanovaleric acid (manufactured by Otsuka Chemical Co., Ltd., product name: ACVA) as a polymerization initiator, 74 parts by mass of butyl acrylate, methyl methacrylate 14 parts by mass, 9 parts by mass of 2-hydroxyethyl methacrylate, 2 parts by mass of methacrylic acid, 1 part by mass of acrylamide, an aqueous solution of polyoxyethylene nonylpropenyl phenyl ether ammonium sulfate (Daiichi Kogyo Pharmaceutical Manufactured by the company, product name: AQUARON (AQUARON) HS-1025) 3 parts by mass were emulsified and polymerized in deionized water at 70° C. for 9 hours. After the polymerization was completed, the pH was adjusted to 7 with ammonia water to obtain an acrylic polymer aqueous emulsion with a solid content concentration of 42.5%. Next, with respect to 100 parts by mass of the acrylic polymer water-based emulsion, ammonia water was used to adjust the pH to 9 or more, and at the same time, an aziridine-based crosslinking agent (manufactured by Nippon Shokubai Chemical Industry Co., Ltd., CHEMITITE) PZ- 33﹞0.75 parts by mass and 5 parts by mass of diethylene glycol monobutyl ether to obtain a coating liquid for a substrate.

＜(甲基)丙烯酸系樹脂溶液＞ (甲基)丙烯酸系樹脂溶液1： 使丙烯酸乙酯49質量份、丙烯酸-2-乙基己酯20質量份、丙烯酸甲酯21質量份、甲基丙烯酸縮水甘油酯10質量份、及作為聚合起始劑的過氧化苯甲醯系聚合起始劑0.5質量份於甲苯65質量份及乙酸乙酯50質量份中於80℃下進行10小時反應。反應結束後，將所獲得的溶液冷卻，於冷卻了的溶液中加入二甲苯25質量份、丙烯酸5質量份、以及十四烷基二甲基苄基氯化銨0.5質量份，一面吹入空氣一面於85℃下進行32小時反應，從而獲得(甲基)丙烯酸系樹脂溶液1。<(Meth)acrylic resin solution> (Meth)acrylic resin solution 1: 49 parts by mass of ethyl acrylate, 20 parts by mass of 2-ethylhexyl acrylate, 21 parts by mass of methyl acrylate, 10 parts by mass of glycidyl methacrylate, and benzyl peroxide as a polymerization initiator 0.5 mass part of polymerization initiators were reacted in 65 mass parts of toluene and 50 mass parts of ethyl acetate at 80 degreeC for 10 hours. After completion of the reaction, the obtained solution was cooled, and 25 parts by mass of xylene, 5 parts by mass of acrylic acid, and 0.5 part by mass of tetradecyldimethylbenzyl ammonium chloride were added to the cooled solution while blowing air. The (meth)acrylic resin solution 1 was obtained by performing the reaction at 85° C. for 32 hours.

(甲基)丙烯酸系樹脂溶液2： 使丙烯酸正丁酯77質量份、甲基丙烯酸甲酯16質量份、丙烯酸-2-羥基乙酯16質量份及作為聚合起始劑的過氧化-2-乙基己酸第三丁酯0.3質量份於甲苯20質量份及乙酸乙酯80質量份中於85℃下進行10小時反應。反應結束後，將所述溶液冷卻，向其中加入甲苯30質量份、甲基丙烯醯氧基乙基異氰酸酯（昭和電工製造，製品名：卡蘭茨（KARENZ）MOI）7質量份及二月桂酸二丁基錫0.05質量份，一面吹入空氣一面於85℃下進行12小時反應，從而獲得(甲基)丙烯酸系樹脂溶液2。(Meth)acrylic resin solution 2: 77 parts by mass of n-butyl acrylate, 16 parts by mass of methyl methacrylate, 16 parts by mass of 2-hydroxyethyl acrylate, and 0.3 mass parts of tert-butyl peroxy-2-ethylhexanoate as a polymerization initiator parts were reacted at 85° C. for 10 hours in 20 parts by mass of toluene and 80 parts by mass of ethyl acetate. After the reaction was completed, the solution was cooled, and 30 parts by mass of toluene, 7 parts by mass of methacryloyloxyethyl isocyanate (manufactured by Showa Denko, product name: KARENZ MOI), and dilauric acid were added. 0.05 mass part of dibutyltin was reacted at 85 degreeC for 12 hours, blowing in air, and the (meth)acrylic-type resin solution 2 was obtained.

(甲基)丙烯酸系樹脂溶液3： 使丙烯酸乙酯30質量份、丙烯酸甲酯11質量份、丙烯酸-2-乙基己酯26質量份、丙烯酸-2-羥基乙酯7質量份、及作為聚合起始劑的過氧化苯甲醯系聚合起始劑0.8質量份於甲苯7質量份及乙酸乙酯50質量份中於80℃下進行9小時反應。反應結束後，將所獲得的溶液冷卻，於冷卻了的溶液中加入甲苯25質量份，從而獲得(甲基)丙烯酸系樹脂溶液3。(Meth)acrylic resin solution 3: 30 parts by mass of ethyl acrylate, 11 parts by mass of methyl acrylate, 26 parts by mass of 2-ethylhexyl acrylate, 7 parts by mass of 2-hydroxyethyl acrylate, and benzyl peroxide as a polymerization initiator 0.8 parts by mass of the polymerization initiator was reacted in 7 parts by mass of toluene and 50 parts by mass of ethyl acetate at 80° C. for 9 hours. After completion of the reaction, the obtained solution was cooled, and 25 parts by mass of toluene was added to the cooled solution to obtain a (meth)acrylic resin solution 3 .

＜斷裂伸長率評價用黏著性膜＞ 藉由向丙烯酸系樹脂溶液中加入表1中所示的添加劑，製備黏著性樹脂層用的黏著劑塗佈液。將所述塗佈液塗佈於經矽酮脫模處理的聚對苯二甲酸乙二酯膜（隔離膜）的脫模處理面上，於120℃下乾燥3分鐘，形成厚度20 μm的黏著性樹脂層。繼而，於黏著性樹脂層上，貼合經電暈處理的乙烯-乙酸乙烯酯共聚物擠出膜（MFR：1.7 g/10 min，乙酸乙烯酯含量：9質量%，厚度：140 μm）的電暈處理面，獲得積層體。繼而，利用烘箱將所獲得的積層體於40℃下加熱3天，使其熟化。<Adhesive film for evaluation of elongation at break> An adhesive coating liquid for an adhesive resin layer was prepared by adding the additives shown in Table 1 to the acrylic resin solution. The coating solution was applied to the release-treated surface of the silicone release-treated polyethylene terephthalate film (separator film), and dried at 120° C. for 3 minutes to form an adhesive with a thickness of 20 μm. resin layer. Then, on the adhesive resin layer, a corona-treated ethylene-vinyl acetate copolymer extruded film (MFR: 1.7 g/10 min, vinyl acetate content: 9 mass %, thickness: 140 μm) was pasted. The surface was corona-treated to obtain a laminate. Next, the obtained laminated body was heated at 40 degreeC for 3 days in an oven, and it was made to age.

＜黏著力及先切割評價用黏著性膜＞ 藉由向丙烯酸系樹脂溶液中加入表1中所示的添加劑，製備黏著性樹脂層用的黏著劑塗佈液。將所述塗佈液塗佈於經矽酮脫模處理的聚對苯二甲酸乙二酯膜（隔離膜）上。繼而，於120℃下乾燥3分鐘，形成厚度20 μm的黏著性樹脂層，並使其貼合於基材層上。關於基材層1及基材層2，使其貼合於電暈處理面上。關於基材層3，剝除隔離膜，使其貼合於丙烯酸層側。利用烘箱將所獲得的積層體於40℃下加熱3天，使其熟化。<Adhesive film for evaluation of adhesion and pre-cutting> An adhesive coating liquid for an adhesive resin layer was prepared by adding the additives shown in Table 1 to the acrylic resin solution. The coating liquid was coated on a polyethylene terephthalate film (separator film) subjected to silicone release treatment. Then, it dried at 120 degreeC for 3 minutes, and formed the adhesive resin layer with a thickness of 20 micrometers, and made it stick to the base material layer. The base material layer 1 and the base material layer 2 were bonded to the corona-treated surface. As for the base material layer 3, the release film was peeled off, and it was made to stick to the acrylic layer side. The obtained laminated body was heated at 40 degreeC for 3 days in an oven, and it was made to age.

＜評價方法＞ （1）紫外線硬化後的黏著性樹脂層的斷裂伸長率 自斷裂伸長率評價用黏著性膜的乙烯-乙酸乙烯酯共聚物擠出膜側，對於黏著性樹脂層於25℃的環境下使用高壓水銀燈以照射強度100 mW/cm2 照射紫外線量為1080 mJ/cm2 的主波長365 nm的紫外線。繼而，切成長度110 mm、寬度10 mm，自積層體剝除作為隔離膜的聚對苯二甲酸乙二酯膜。 繼而，將黏著性樹脂層與乙烯-乙酸乙烯酯共聚物擠出膜一同，以初期的夾盤間距離Lo為50 mm的方式利用拉伸試驗機（島津製作所，製品名：奧拓古拉夫（AUTOGRAPH）AGS-X）夾持。以30 mm/分鐘的速度拉伸樣品，將藉由目視於黏著性樹脂層上觀測到斷裂的點作為斷裂點，將此時的夾盤間距離設為L。斷裂伸長率（%）藉由（L-Lo）/Lo×100（%）求出。評價以N=2實施，將其值加以平均來作為測定值。<Evaluation method> (1) Elongation at break of adhesive resin layer after ultraviolet curing Under the environment, a high-pressure mercury lamp was used to irradiate ultraviolet rays having a dominant wavelength of 365 nm with an ultraviolet amount of 1080 mJ/cm 2 at an irradiation intensity of 100 mW/cm 2 . Next, it cut into length 110mm, width 10mm, and peeled off the polyethylene terephthalate film as a release film from the laminated body. Next, together with the ethylene-vinyl acetate copolymer extruded film, the adhesive resin layer was subjected to a tensile testing machine (Shimadzu Corporation, product name: AUTOGRAPH) so that the initial distance Lo between the chucks was 50 mm. ) AGS-X) Clamping. The sample was pulled at a speed of 30 mm/min, and the point at which a break was observed on the adhesive resin layer by visual observation was taken as the break point, and the distance between the chucks at this time was set to L. The elongation at break (%) was obtained by (L-Lo)/Lo×100 (%). The evaluation was performed with N=2, and the values were averaged to obtain the measured value.

（2）黏著力評價 被接著體晶圓： 將矽鏡面晶圓（4吋單面鏡面晶圓）的鏡面藉由紫外線（Ultraviolet，UV）臭氧清洗裝置（科技視野（Technovision）公司製造、UV-208）進行臭氧清洗（臭氧處理時間：60秒）。其後，利用乙醇擦拭晶圓鏡面，將所得者作為被接著體晶圓。(2) Adhesion evaluation Bonded body wafer: The mirror surface of a silicon mirror wafer (4-inch single-sided mirror wafer) was ozone cleaned by an ultraviolet (Ultraviolet, UV) ozone cleaning device (manufactured by Technovision, UV-208) (ozone treatment time: 60 seconds) ). After that, the mirror surface of the wafer was wiped with ethanol, and the resultant was used as a wafer to be bonded.

紫外線照射前黏著力： 於23℃、50%RH的環境下，將黏著力評價用黏著性膜切成橫向寬度50 mm，剝除隔離膜，使用手動輥將黏著性膜經由其黏著性樹脂層貼附於被接著體晶圓鏡面上，放置1小時。放置後，使用拉伸試驗機（島津製作所，製品名：奧拓古拉夫（AUTOGRAPH）AGS-X）夾持黏著性膜的一端，以剝離角度：180度、剝離速度：300 mm/分鐘自被接著體晶圓的表面剝離黏著性膜。測定此時的應力，並換算為N/25 mm，求出黏著力。評價以N=2實施，將其值加以平均來作為測定值。 紫外線照射後黏著力：於23℃、50%RH的環境下，將黏著力評價用黏著性膜切成橫向寬度50 mm，剝除隔離膜，使用手動輥將黏著性膜經由其黏著性樹脂層貼附於被接著體晶圓鏡面上，放置1小時。放置後，於25℃的環境下使用高壓水銀燈以照射強度100 mW/cm2 對黏著性膜照射紫外線量為1080 mJ/cm2 的主波長365 nm的紫外線。其後，使用拉伸試驗機（島津製作所，製品名：奧拓古拉夫（autograph）AGS-X）夾持黏著性膜的一端，以剝離角度：180度、剝離速度：300 mm/分鐘自被接著體晶圓的表面剝離黏著性膜。測定此時的應力，並換算為N/25 mm，求出黏著力。評價以N=2實施，將其值加以平均來作為測定值。Adhesion before ultraviolet irradiation: In an environment of 23°C and 50% RH, cut the adhesive film for adhesive force evaluation into a transverse width of 50 mm, peel off the release film, and use a manual roller to pass the adhesive film through the adhesive resin layer. It was attached to the mirror surface of the adherend wafer and left for 1 hour. After standing, one end of the adhesive film was clamped with a tensile tester (Shimadzu Corporation, product name: AUTOGRAPH AGS-X), and self-bonding was performed at a peeling angle: 180 degrees and a peeling speed: 300 mm/min. The surface of the bulk wafer peels off the adhesive film. The stress at this time was measured and converted into N/25 mm to obtain the adhesive force. The evaluation was performed with N=2, and the values were averaged to obtain the measured value. Adhesion after ultraviolet irradiation: In an environment of 23°C and 50% RH, cut the adhesive film for adhesive force evaluation into a transverse width of 50 mm, peel off the release film, and use a manual roller to pass the adhesive film through the adhesive resin layer. It was attached to the mirror surface of the adherend wafer and left for 1 hour. After standing, the adhesive film was irradiated with ultraviolet rays having a dominant wavelength of 365 nm with an ultraviolet dose of 1080 mJ/cm 2 using a high-pressure mercury lamp at an irradiation intensity of 100 mW/cm 2 in an environment of 25°C. After that, one end of the adhesive film was sandwiched by a tensile tester (Shimadzu Corporation, product name: Autograph AGS-X), and self-adhering was performed at a peeling angle: 180 degrees and a peeling speed: 300 mm/min. The surface of the bulk wafer peels off the adhesive film. The stress at this time was measured and converted into N/25 mm to obtain the adhesive force. The evaluation was performed with N=2, and the values were averaged to obtain the measured value.

殘膠評價： 藉由目視觀察所述剝離後的被接著體晶圓，按照以下基準進行評價。 ○（良）：未確認到殘膠 ×（差）：確認到殘膠Residual glue evaluation: The bonded body wafer after the peeling was visually observed and evaluated according to the following criteria. ○ (Good): Residual glue not confirmed × (poor): Residual glue confirmed

（3）先切割法評價 評價晶圓1： 使用切割鋸，對鏡面晶圓（8吋鏡面晶圓，直徑：200±0.5 mm，厚度：725±50 μm，單面鏡面）的鏡面進行半切，獲得評價晶圓1。（刀片：ZH05-SD3500-N1-70-DD，晶片尺寸：5 mm×8 mm，切口深度：58 μm，刀片旋轉速度：30000 rpm）。利用光學顯微鏡觀察評價晶圓1，結果劃痕寬度為35 μm。(3) Evaluation of the first cutting method Evaluation Wafer 1: Using a dicing saw, half-cut the mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200±0.5 mm, thickness: 725±50 μm, single-sided mirror surface) to obtain evaluation wafer 1. (Blade: ZH05-SD3500-N1-70-DD, wafer size: 5 mm × 8 mm, kerf depth: 58 μm, blade rotation speed: 30000 rpm). The evaluation wafer 1 was observed and evaluated with an optical microscope, and as a result, the scratch width was 35 μm.

評價晶片2： 使用切割鋸，對鏡面晶圓（8吋鏡面晶圓，直徑：200±0.5 mm，厚度：725±50 μm，單面鏡面）的鏡面實施第一階段的半切（刀片：Z09-SD2000-Y1 58×0.25A×40×45E-L，晶片尺寸：5 mm×8 mm，切口深度：15 μm，刀片旋轉速度：30000 rpm）。利用光學顯微鏡進行觀察，結果劃痕寬度為60 μm。繼而，實施第二階段的半切（刀片：ZH05-SD3500-N1-70-DD，晶片尺寸：5 mm×8 mm，切口深度：58 μm，刀片旋轉速度：30000 rpm），獲得評價晶圓2。Evaluation Wafer 2: Using a dicing saw, perform the first-stage half-cut on the mirror surface of a mirror wafer (8-inch mirror wafer, diameter: 200±0.5 mm, thickness: 725±50 μm, single-sided mirror surface) (blade: Z09-SD2000-Y1 58 × 0.25A × 40 × 45E-L, wafer size: 5 mm × 8 mm, kerf depth: 15 μm, blade rotation speed: 30000 rpm). Observation with an optical microscope showed that the scratch width was 60 μm. Next, a second-stage half-cut (blade: ZH05-SD3500-N1-70-DD, wafer size: 5 mm×8 mm, kerf depth: 58 μm, blade rotation speed: 30,000 rpm) was performed, and evaluation wafer 2 was obtained.

先切割法： 使用膠帶層壓機（日東電工公司製造，DR3000II），將先切割評價用黏著性膜貼附於所述評價晶圓的經半切的面上（23℃，貼附速度：5 mm/分鐘，貼附壓力：0.36 MPa）。 繼而，使用研磨機（grinder）（迪思科（DISCO）公司製造，DGP8760）對所述晶圓進行背面研磨（粗磨削及精密磨削，精密磨削量：40 μm，無拋光，研磨後厚度：38 μm），並加以單片化。 關於先切割時的晶片飛散，於實施背面研磨後，藉由目視並按照以下基準進行評價。 ○（良）：包含三角角部在內，未確認到晶片飛散 ×（差）：包含三角角部在內，確認到晶片飛散Cut first: Using a tape laminator (manufactured by Nitto Denko Co., Ltd., DR3000II), an adhesive film for pre-dicing evaluation was attached to the half-cut surface of the evaluation wafer (23° C., attaching speed: 5 mm/min, attaching Attachment pressure: 0.36 MPa). Next, the wafer was back-grinded (rough grinding and fine grinding, fine grinding amount: 40 μm, no polishing, thickness after grinding) using a grinder (DGP8760, manufactured by DISCO) : 38 μm) and singulated. The wafer scattering at the time of pre-dicing was evaluated by the following criteria by visual observation after back grinding. ○ (good): Including the triangle corners, no wafer scattering was confirmed × (poor): Wafer scattering was confirmed including the triangle corners

進而，進行UV照射及先切割評價用黏著性膜剝離，評價先切割法後的殘膠。 UV照射是於25℃的環境下使用高壓水銀燈以照射強度100 mW/cm2 對先切割評價用黏著性膜照射紫外線量為1080 mJ/cm2 的主波長365 nm的紫外線。 先切割評價用黏著性膜的剝離按照以下的程序進行。首先，使用晶圓裝配機（日東電工公司製造，MSA300），將另外準備的切割膠帶（用作裝配用膠帶）經由該切割膠帶的黏著面貼附於8吋晶圓用環形框架及所述經單片化的晶圓的晶圓側。繼而，使用膠帶剝離機（日東電工公司製造，HR3000III），藉由剝離膠帶（拉斯廷系統（Lasting System）公司製造，PET38REL）自晶圓切口部剝離先切割評價用黏著性膜。裝置剝離性按照以下基準進行評價。 ○（良）：第一次可將先切割評價用黏著性膜自晶圓剝離 ×（差）：第一次無法將先切割評價用黏著性膜自晶圓剝離Furthermore, UV irradiation and peeling of the adhesive film for pre-cut evaluation were performed, and the residual adhesive after the pre-cut method was evaluated. UV irradiation was performed by irradiating the adhesive film for pre-cut evaluation with ultraviolet rays having a dominant wavelength of 365 nm with an ultraviolet dose of 1080 mJ/cm 2 using a high-pressure mercury lamp at an irradiation intensity of 100 mW/cm 2 in an environment of 25°C. The peeling of the adhesive film for pre-cut evaluation was performed according to the following procedure. First, using a wafer mounter (manufactured by Nitto Denko Co., Ltd., MSA300), a separately prepared dicing tape (used as a tape for assembly) was attached to the ring frame for 8-inch wafers and the above-mentioned dicing tape through the adhesive surface of the dicing tape. Wafer side of a singulated wafer. Next, the adhesive film for pre-dicing evaluation was peeled off from the wafer notch portion using a tape peeling machine (manufactured by Nitto Denko Co., Ltd., HR3000III) with a peeling tape (manufactured by Lasting Systems, Inc., PET38REL). The device peelability was evaluated according to the following criteria. ○ (good): The adhesive film for pre-dicing evaluation can be peeled off the wafer for the first time × (poor): The adhesive film for pre-dicing evaluation cannot be peeled off from the wafer for the first time

關於先切割法後的經單片化的晶圓上的殘膠，使用光學顯微鏡（奧林巴斯（OLYMPUS）公司製造），並按照以下基準進行評價。 ○（良）：未確認到殘膠 ×（差）：確認到殘膠The adhesive residue on the singulated wafer after the pre-dicing method was evaluated according to the following criteria using an optical microscope (manufactured by OLYMPUS). ○ (Good): Residual glue not confirmed × (poor): Residual glue confirmed

[實施例1] 對於(甲基)丙烯酸系樹脂溶液1（固體成分）100質量份，添加作為光起始劑的2,2-二甲氧基-2-苯基苯乙酮（IGM公司製造，商品名：奧尼拉德（OMNIRAD）651）6.9質量份、異氰酸酯系交聯劑（三井化學公司製造，商品名：奧萊斯特（OLESTER）P49-75S）0.93質量份，獲得黏著性樹脂層用的黏著劑塗佈液1。藉由所述方法，製作斷裂伸長率評價用黏著性膜、黏著力評價用黏著性膜及先切割評價用黏著性膜。另外，基於先前所敘述的評價方法，實施紫外線硬化後的黏著材的斷裂伸長率、黏著力評價及先切割法評價。將結果示於表1中。[Example 1] To 100 parts by mass of the (meth)acrylic resin solution 1 (solid content), as a photoinitiator, 2,2-dimethoxy-2-phenylacetophenone (manufactured by IGM, trade name: Austrian) was added 6.9 parts by mass of OMNIRAD 651, 0.93 parts by mass of an isocyanate-based crosslinking agent (manufactured by Mitsui Chemicals Co., Ltd., trade name: OLESTER P49-75S) to obtain an adhesive for an adhesive resin layer Coating Liquid 1. By this method, the adhesive film for elongation at break evaluation, the adhesive film for adhesive force evaluation, and the adhesive film for pre-cut evaluation were produced. Moreover, based on the evaluation method described above, the elongation at break of the adhesive material after ultraviolet curing, the adhesive force evaluation, and the pre-cut method evaluation were implemented. The results are shown in Table 1.

[實施例2～實施例10及比較例1及比較例2] 將黏著性樹脂層及基材層的種類變更為表1中所示者，除此以外，以與實施例1同樣的方式分別製作黏著性膜。另外，與實施例1同樣地分別進行各評價。將所獲得的結果分別示於表1中。 再者，表1中記載的化合物如下所述。 奧尼拉德（OMNIRAD）651（IGM公司製造）：2,2-二甲氧基-2-苯基苯乙酮 奧尼拉德（OMNIRAD）369（IGM公司製造）：2-苄基-2-二甲基胺基-4'-嗎啉代苯丁酮 阿羅尼斯（ARONIX）M400（東亞合成公司製造）：二季戊四醇五丙烯酸酯與二季戊四醇六丙烯酸酯的混合物 NK酯AD-TMP（新中村化學工業公司製造）：二-三羥甲基丙烷四丙烯酸酯[Example 2 to Example 10 and Comparative Example 1 and Comparative Example 2] An adhesive film was produced in the same manner as in Example 1, except that the types of the adhesive resin layer and the base material layer were changed to those shown in Table 1, respectively. In addition, each evaluation was performed similarly to Example 1, respectively. The obtained results are shown in Table 1, respectively. In addition, the compounds described in Table 1 are as follows. OMNIRAD 651 (manufactured by IGM): 2,2-dimethoxy-2-phenylacetophenone OMNIRAD 369 (manufactured by IGM): 2-benzyl-2-dimethylamino-4'-morpholinophenbutanone ARONIX M400 (manufactured by Toagosei Co., Ltd.): a mixture of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate NK Ester AD-TMP (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.): Di-trimethylolpropane tetraacrylate

[表1] 表1   實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 實施例8 實施例9 實施例10 比較例1 比較例2 黏著性膜 基材層   基材層1 基材層1 基材層1 基材層1 基材層1 基材層1 基材層1 基材層2 基材層3 基材層3 基材層1 基材層1 基材層厚度 μm 50 50 50 50 50 50 50 110 145 145 50 50 黏著性樹脂層 調配 (甲基)丙烯酸系樹脂溶液1 phr 100 100 100 100         100 100     (甲基)丙烯酸系樹脂溶液2 phr         100 100 100 100         (甲基)丙烯酸系樹脂溶液3 phr                     100 100 奧尼拉德（OMNIRAD）651 phr 6.9 6.9 6.9 6.9         6.9 6.9 6.9 6.9 奧尼拉德（OMNIRAD）369 phr         6 6 6 6         阿羅尼斯（ARONIX）M400 phr   5 30     11.6   11.6 11.6 11.6 10 50 NK酯AD-TMP phr       11.6     11.6           奧萊斯特（OLESTER）P49-75S phr 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.5 0.93 0.93 0.93 黏著性樹脂層厚度 μm 20 20 20 20 20 20 20 20 20 20 20 20 黏著性膜厚度 μm 70 70 70 70 70 70 70 130 165 165 70 70 黏著性樹脂層物性 斷裂伸長率 UV照射後 - 79% 58% 21% 53% 57% 47% 49% 47% 45% 47% 219% 17% 黏著性膜物性 180°黏著力 UV照射前 N/25 mm 6.9 8.7 6.81 2.4 10.9 10.99 5.6 7.13 12.7 11.6 14.06 5.41 UV照射後 N/25 mm 0.69 0.34 0.03 0.11 0.16 0.18 0.17 0.24 0.43 0.63 8.69 0.07 180°剝離試驗下的殘膠 - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 先切割法評價 評價晶圓 - 晶圓1 晶圓1 晶圓1 晶圓1 晶圓1 晶圓1 晶圓1 晶圓1 晶圓2 晶圓2 晶圓1 晶圓1 DBG後 晶片飛散 - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 裝配 剝離後 裝置剝離性 - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 殘膠 - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 × × [Table 1] Table 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 Comparative Example 1 Comparative Example 2 adhesive film substrate layer Substrate layer 1 Substrate layer 1 Substrate layer 1 Substrate layer 1 Substrate layer 1 Substrate layer 1 Substrate layer 1 Substrate layer 2 Substrate layer 3 Substrate layer 3 Substrate layer 1 Substrate layer 1 Substrate layer thickness μm 50 50 50 50 50 50 50 110 145 145 50 50 Adhesive resin layer preparation (Meth)acrylic resin solution 1 phr 100 100 100 100 100 100 (Meth)acrylic resin solution 2 phr 100 100 100 100 (Meth)acrylic resin solution 3 phr 100 100 OMNIRAD 651 phr 6.9 6.9 6.9 6.9 6.9 6.9 6.9 6.9 OMNIRAD 369 phr 6 6 6 6 ARONIX M400 phr 5 30 11.6 11.6 11.6 11.6 10 50 NK ester AD-TMP phr 11.6 11.6 OLESTER P49-75S phr 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.5 0.93 0.93 0.93 Adhesive resin layer thickness μm 20 20 20 20 20 20 20 20 20 20 20 20 adhesive film thickness μm 70 70 70 70 70 70 70 130 165 165 70 70 Adhesive resin layer physical properties Elongation at break After UV irradiation - 79% 58% twenty one% 53% 57% 47% 49% 47% 45% 47% 219% 17% Adhesive film properties 180° Adhesion Before UV irradiation N/25mm 6.9 8.7 6.81 2.4 10.9 10.99 5.6 7.13 12.7 11.6 14.06 5.41 After UV irradiation N/25mm 0.69 0.34 0.03 0.11 0.16 0.18 0.17 0.24 0.43 0.63 8.69 0.07 Adhesive residue under 180° peel test - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 First-cut evaluation Evaluate wafers - Wafer 1 Wafer 1 Wafer 1 Wafer 1 Wafer 1 Wafer 1 Wafer 1 Wafer 1 Wafer 2 Wafer 2 Wafer 1 Wafer 1 After DBG Chip flying - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 After assembly and stripping Device peelability - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Residue - 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 × ×

本申請案主張以2020年6月10日提出申請的日本申請特願2020-101120號為基礎的優先權，並將其全部揭示內容併入本申請案中。The present application claims priority based on Japanese Patent Application No. 2020-101120 for which it applied on June 10, 2020, and the entire disclosure thereof is incorporated into the present application.

10:基材層 20:黏著性樹脂層 30:電子零件 30A:電路形成面 50:黏著性膜 100:結構體10: Substrate layer 20: Adhesive resin layer 30: Electronic Parts 30A: circuit forming surface 50: Adhesive film 100: Structure

圖1是示意性地表示本發明的實施形態的黏著性膜的結構的一例的剖面圖。 圖2的（A）至（C）是示意性地表示本發明的實施形態的電子裝置的製造方法的一例的剖面圖。FIG. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film according to an embodiment of the present invention. (A) to (C) of FIG. 2 are cross-sectional views schematically showing an example of a method of manufacturing an electronic device according to an embodiment of the present invention.

10:基材層10: Substrate layer

20:黏著性樹脂層20: Adhesive resin layer

30:電子零件30: Electronic Parts

30A:電路形成面30A: circuit forming surface

50:黏著性膜50: Adhesive film

100:結構體100: Structure

Claims (6)

一種電子裝置的製造方法，至少包括： 步驟（A），準備結構體，所述結構體包括具有電路形成面的電子零件、以及貼合於所述電子零件的所述電路形成面側的黏著性膜； 步驟（B），對所述電子零件的與所述電路形成面側為相反側的面進行背面研磨；以及 步驟（C），對所述黏著性膜照射紫外線之後自所述電子零件除去所述黏著性膜，其中， 所述黏著性膜包括基材層以及設置於所述基材層的其中一面側的紫外線硬化型的黏著性樹脂層， 於所述步驟（C）中，照射紫外線之後的所述黏著性樹脂層的斷裂伸長率為20%以上且200%以下。A method of manufacturing an electronic device, comprising at least: step (A), preparing a structure including an electronic component having a circuit forming surface, and an adhesive film attached to the circuit forming surface side of the electronic component; step (B) of back grinding the surface of the electronic component on the opposite side to the circuit forming surface; and Step (C), removing the adhesive film from the electronic parts after irradiating the adhesive film with ultraviolet rays, wherein, The adhesive film includes a base material layer and a UV-curable adhesive resin layer disposed on one side of the base material layer, In the step (C), the elongation at break of the adhesive resin layer after ultraviolet irradiation is 20% or more and 200% or less. 如請求項1所述的電子裝置的製造方法，其中， 所述步驟（A）包括： 步驟（A1），選自對所述電子零件進行半切的步驟（A1-1）及對於所述電子零件照射雷射而於所述電子零件上形成改質層的步驟（A1-2）中的至少一種；以及 步驟（A2），於所述步驟（A1）之後，於所述電子零件的所述電路形成面側貼附所述黏著性膜。The method for manufacturing an electronic device according to claim 1, wherein, The step (A) includes: Step (A1), selected from the step (A1-1) of half-cutting the electronic part and the step (A1-2) of irradiating the electronic part with a laser to form a modified layer on the electronic part at least one; and In step (A2), after the step (A1), the adhesive film is attached to the circuit formation surface side of the electronic component. 如請求項1或請求項2所述的電子裝置的製造方法，其中， 於所述步驟（C）中，藉由對所述黏著性膜照射200 mJ/cm2 以上且2000 mJ/cm2 以下的劑量的紫外線，使所述黏著性樹脂層光硬化，而降低所述黏著性樹脂層的黏著力，之後自所述電子零件除去所述黏著性膜。The method for manufacturing an electronic device according to claim 1 or claim 2, wherein, in the step (C), the adhesive film is irradiated with 200 mJ/cm 2 or more and 2000 mJ/cm 2 or less. A dose of ultraviolet rays causes the adhesive resin layer to be photohardened, thereby reducing the adhesive force of the adhesive resin layer, and then the adhesive film is removed from the electronic part. 如請求項1或請求項2所述的電子裝置的製造方法，其中， 所述黏著性樹脂層包含分子中具有聚合性碳-碳雙鍵的(甲基)丙烯酸系樹脂以及光起始劑。The method for manufacturing an electronic device according to claim 1 or claim 2, wherein, The adhesive resin layer includes a (meth)acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator. 如請求項1或請求項2所述的電子裝置的製造方法，其中， 所述黏著性樹脂層的厚度為5 μm以上且300 μm以下。The method for manufacturing an electronic device according to claim 1 or claim 2, wherein, The thickness of the adhesive resin layer is 5 μm or more and 300 μm or less. 如請求項1或請求項2所述的電子裝置的製造方法，其中， 構成所述基材層的樹脂包含選自聚烯烴、聚酯、聚醯胺、聚丙烯酸酯、聚甲基丙烯酸酯、聚氯乙烯、聚偏二氯乙烯、聚醯亞胺、聚醚醯亞胺、乙烯-乙酸乙烯酯共聚物、聚丙烯腈、聚碳酸酯、聚苯乙烯、離子聚合物、聚碸、聚醚碸及聚苯醚中的一種或兩種以上。The method for manufacturing an electronic device according to claim 1 or claim 2, wherein, The resin constituting the base material layer is selected from the group consisting of polyolefin, polyester, polyamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyvinylidene chloride, polyimide, polyetherimide One or two or more of amine, ethylene-vinyl acetate copolymer, polyacrylonitrile, polycarbonate, polystyrene, ionomer, polyselenium, polyethersine and polyphenylene ether.
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CN115699263A (en) 2023-02-03
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