TW202131466A - 板上封裝顯示元件及其製造方法 - Google Patents
板上封裝顯示元件及其製造方法 Download PDFInfo
- Publication number
- TW202131466A TW202131466A TW109103482A TW109103482A TW202131466A TW 202131466 A TW202131466 A TW 202131466A TW 109103482 A TW109103482 A TW 109103482A TW 109103482 A TW109103482 A TW 109103482A TW 202131466 A TW202131466 A TW 202131466A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- micro
- emitting diode
- layer
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 239000011265 semifinished product Substances 0.000 claims description 12
- 230000003666 anti-fingerprint Effects 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 claims description 11
- 230000003667 anti-reflective effect Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 238000001746 injection moulding Methods 0.000 claims description 4
- 229920005787 opaque polymer Polymers 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 75
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0273—Diffusing elements; Afocal elements characterized by the use
- G02B5/0278—Diffusing elements; Afocal elements characterized by the use used in transmission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
一種板上封裝顯示元件,包含一基板、多數成陣列排列的微發光二極體晶片、一遮光層,及一抗眩光層。該等微發光二極體晶片彼此成一間隙間隔設置於該基板的第一表面,該遮光層由不透光高分子材料構成,位於該第一表面並填置於該間隙,該抗眩光層直接覆蓋該遮光層及該等微發光二極體晶片,且該抗眩光層具有一自遠離該基板的表面向下形成的圖案化微結構。此外,本發明還同時提供一種板上封裝顯示元件的製造方法。
Description
本發明是有關於一種顯示元件及其製造方法,特別是指一種板上封裝(Chip on board,COB)顯示元件及其製造方法。
雖著發光元件的體積要求越來越輕薄短小,且亮度要求越來越高,一般的表面封裝(SMD)已無法滿足需求。因此,板上封裝(Chip on board,COB),已成為新一代熱門封裝技術。
板上封裝(COB)LED顯示器,是利用將LED裸晶晶片直接安裝在例如電路板,與該電路板電連接,之後再藉由封裝膠封裝蓋覆該等LED晶片,將該等晶片及電路板封裝成一體,因此,可具有較佳的散熱性,以及更高的光通量。
因此,本發明的目的,即在提供一種可防眩光的板上封裝(COB)顯示元件。
於是,本發明的板上封裝(COB)顯示元件,包含一基板、多數微發光二極體晶片、一遮光層,及一抗眩光層。
該基板具有彼此反向的一第一表面及一第二表面。
該等微發光二極體晶片(Micro LED chips)彼此成一間隙並成陣列排列設置於該基板的第一表面。
該遮光層由不透光高分子材料構成,位於該第一表面並填置於該間隙。
該抗眩光層直接覆蓋該遮光層及該等微發光二極體晶片,且該抗眩光層具有一自遠離該基板的表面向下形成的圖案化微結構。
此外,本發明的另一目的,即在提供一種板上封裝(COB)顯示元件的製作方法。
於是,本發明板上封裝(COB)顯示元件的製作方法,包含以下步驟。
將多數成陣列排列的微發光二極體晶片直接固設於一基板的表面,並令該等微發光二極體晶片彼此呈一間隙。
利用噴印方式於該間隙填置不透光材料,於該間隙形成一遮光層,得到一半成品。
準備一模具,該模具於鄰近該半成品的微發光二極體晶片的表面設有一離型層,且該離型層於鄰近該等微發光二極體晶片的表面具有一由凹凸結構形成的微圖案。
將該半成品以該等微發光二極體晶片朝向該離型層的方向置於該模具中,利用模注方式於該半成品與該離型層之間注入一透明的光學膠材並令該光學膠材硬化,其中,該光學膠材於硬化的同時會將該離型層的微圖案轉印,而於硬化的光學膠材表面形成一圖案化微結構,以得到一覆蓋該遮光層及該等微發光二極體晶片的抗眩光層。
本發明的功效在於:藉由在該等微發光二極體晶片的間隙形成遮光材料,並利用圖案化的離形膜配合模注方式,直接將透光材料覆蓋在微發光二極體晶片並在該透光材料硬化的同時將該離形膜的微圖案轉印到硬化後的透光材料表面,而形成一層抗眩光膜,而得到一可防漏光及抗眩光的板上封裝顯示元件。
在本發明被詳細描述的前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。
參閱圖1,本發明板上封裝(COB)顯示元件的一第一實施例,包含一基板2、多數微發光二極體晶片3、一電子元件單元4、一遮光層5、一抗眩光層6、一抗反射層7,及一抗指紋層8。
該基板2可以是選自透光或不透光的材料,例如玻璃、陶瓷等,或是具有控制電路的電路板,具有彼此反向的一第一表面21及一第二表面22。於本實施例中該基板2是以玻璃基板為例,且該玻璃基板2具有一可用以與該等微發光二極體晶片3及該電子元件4電連接的電連接線路(圖未示)。
該等微發光二極體晶片(Micro LED chips)3是選自可以發出相同或不同之色光的裸晶晶片,並透過焊料(圖未示)直接焊接於該第一表面21並與該電連接線路電連接,且該等微發光二極體晶片3是以陣列排列方式成一間隙間隔分佈設置於該第一表面21。於本實施例中該等微發光二極體晶片3是以分別可發出紅光、綠光及藍光的微發光二極體晶片3為例說明。
該電子元件單元4可包含多數不同的主動元件41及/或被動元件42,例如電晶體、整容器、電阻、電容、電感等。該等主動元件41及/或被動元件42可透過該電連接線路而與至少部分的該等微發光二極體晶片3電連接,以用於控制該等微發光二極體晶片3,並可用以與外部的控制電路(圖未示)電連接。
該遮光層5由不透光高分子材料構成,位於該第一表面21並填置於該等微發光二極體晶片3之間的間隙。
詳細的說,該遮光層5可以是選自一般常用的黑色樹脂(Black matrix,BM),且該遮光層5的高度不大於該等微發光二極體晶片3的厚度,透過於該等微發光二極體晶片3之間的間隙填置不透光的遮光層5,可避免相鄰之微發光二極體晶片3發出的光相互干擾,並可提升該等微發光二極體晶片3的正向出光效率。
該抗眩光層6覆蓋該遮光層5及該等微發光二極體晶片3,且該抗眩光層6具有一透明的光學膠材構成的透光本體61,以及形成於該透明本體61遠離該基板2的表面的圖案化微結構62。該圖案化微結構62可以是規則或不規則的均勻分佈於該表面611的凹凸圖案,透過該圖案化微結構62可令光於接觸該圖案化微結構62時達成散射的效果而可降低光反射。
該抗反射層7可以是選自折射率介於該等晶片的材料及空氣之間的透光材料,或是由多層高、低折射率材料堆疊而成(例如可由TiO2
/NB2
O5
/SiO2
交錯堆疊,且是以低折射率材料位於最外層)。該抗反射層7覆蓋該抗眩光層6反向該基板2的表面,用於降低該等微發光二極體晶片3對外發出的光的全反射,以提升該板上封裝顯示元件的出光效率。
該抗指紋層8可以是選自含氟化合物或矽烷化合物,覆蓋該抗反射層7反向該基板2的表面,用於降低使用者於接觸該顯示元件表面時的油汙殘留。
茲將前述該板上封裝顯示元件實施例的製作方法說明如下。
配合參閱圖2、3,首先進行步驟91,於該基板2設置多數成陣列排列的微發光二極體晶片3。
詳細的說,該步驟91是利用焊料,直接將該等微發光二極體晶片3焊接於該基板2的第一表面21,並令該等微發光二極體晶片3彼此呈一間隙間隔設置。
接著,進行步驟92,於該等微發光二極體晶片3的間隙形成該遮光層5。
該步驟92是利用噴墨印刷方式,於該間隙填置不透光材料(例如黑色樹脂,BM),將該不透光材料乾燥硬化,於該間隙形成該遮光層5,得到一半成品100。
接著,進行步驟93,準備一可容設該半成品100的模具101。
詳細的說,該模具101於鄰近該半成品100的微發光二極體晶片3的表面設有一離型層102,且該離型層102於鄰近該等微發光二極體晶片3的表面具有一由凹凸結構形成的微圖案103。
然後,進行步驟94,形成覆蓋該等微發光二極體晶片3的抗眩光層6。
詳細的說,該步驟94是將該半成品100以該等微發光二極體晶片3朝向該離型層102的方向置於該模具100中,利用模注方式,於該半成品100與該離型層102之間注入一透明的光學膠材並將該光學膠材硬化而得到該透光本體61,其中,該光學膠材於硬化的同時會將該離型層102的微圖案103轉印,而於該透光本體61表面形成與該微圖案103相應的圖案化微結構62,以得到該覆蓋該遮光層5及該等微發光二極體晶片3的抗眩光層6。
接著,進行步驟95,於該抗眩光層6表面形成該抗反射層7。
詳細的說,該步驟95是利用低溫真空鍍膜方式,於該抗眩光層6表面沉積形成一層由折射率介於該等微發光二極體晶片與空氣之間的透明材料構成的該抗反射層7,或是由多層透明的高、低折射率材料堆疊而成的該抗反射層7。於本實施例中,該抗反射層7是以低溫真空鍍膜方式於該抗眩光層6表面沉積堆疊多層高、低折射率材料(TiO2
/NB2
O5
/SiO2
)而得。
然後,進行步驟96,於該抗反射層7表面形成該抗指紋層8。
詳細的說,該抗指紋層8選自含氟化合物或矽烷化合物,可以利用低溫真空鍍膜,而於該抗反射層7的頂面形成該抗指紋層8。
最後,進行步驟97,於該基板2的第二表面22設置該電子元件4。
詳細的說,該步驟97是將所要的電子元件4(主動元件41、被動元件42),設置於該基板2的第二表面22並完成相關的電連接,即可製得如圖1所示的該板上封裝顯示元件。
綜上所述,本發明該板上封裝顯示元件的製作方法,透過於模注過程配合利用具有該微圖案103的離型層102,因此,可在將光學膠材硬化的同時即形成由該離型層103轉印而來的圖案化微結構62。不僅製程簡易,且因使用離型層102為媒介,因此,於成型後易於離型,無需像習知為了在模注成形體上形成微結構,因此,需要在模具101的內表面配合形成微圖案,或是為了成形後易於離形,而需要在模具101的內表面塗佈離形助劑以協助離形的問題,而可增加模具的應用性並避免離形助劑殘留而對後續鍍膜的影響。此外,配合利用低溫鍍膜沉積形成該抗反射層7及/或抗指紋層8,還可避免一般高溫濺鍍對該基板2的影響,而可更適用於不同種類的基板2。
此外,本發明的板上封裝顯示元件,藉由在該等微發光二極體晶片3的間隙形成遮光層5,並直接於該等微發光二極體晶片3上形成覆蓋該等微發光二極體晶片3的抗眩光層5,因此,本發明該板上封裝顯示元件可同時達到防漏光及抗眩光的效果。而再配合抗反射層7及抗指紋層8等功能層,還可進一步令該板上封裝顯示元件具有低反射及表面抗汙的功效,故確實能達成本發明的目的。
惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。
2:基板
21:第一表面
22:第二表面
3:微發光二極體晶片
4:電子元件單元
41:主動元件
42:被動元件
5:遮光層
6:抗眩光層
61:透光本體
62:圖案化微結構
7:抗反射層
8:抗指紋層
91~97:步驟
100:半成品
101:模具
102:離形層
103:微圖案
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:
圖1是本發明板上封裝顯示元件的實施例的一側式圖;
圖2是本發明該實施例的製作方法的一文字流程圖;及
圖3是輔助說明本發明該製作方法的一流程示意圖。
2:基板
21:第一表面
22:第二表面
3:微發光二極體晶片
4:電子元件單元
41:主動元件
42:被動元件
5:遮光層
6:抗眩光層
61:透光本體
62:圖案化微結構
7:抗反射層
8:抗指紋層
Claims (10)
- 一種板上封裝顯示元件,包含: 一基板,具有彼此反向的一第一表面及一第二表面; 多數成陣列排列的微發光二極體晶片,彼此成一間隙間隔設置於該基板的第一表面; 一遮光層,由不透光高分子材料構成,位於該第一表面並填置於該間隙;及 一抗眩光層,由透明的光學膠材構成,直接覆蓋該遮光層及該等微發光二極體晶片,且該抗眩光層具有一自遠離該基板的表面向下形成的圖案化微結構。
- 如請求項1所述的板上封裝顯示元件,還包含一覆蓋該抗眩光層反向該基板的表面的抗反射層。
- 如請求項2所述的板上封裝顯示元件,還包含一覆蓋該抗反射層反向該基板的表面的抗指紋層。
- 如請求項1所述的板上封裝顯示元件,其中,該遮光層的高度不大於該等微發光二極體晶片的高度。
- 如請求項1所述的板上封裝顯示元件,其中,該基板為具有一控制電路的電路板,該等微發光二極體晶片與該控制電路電連接。
- 如請求項1所述的板上封裝顯示元件,還包含多數設置該基板的第二表面,並與該等微發光二極體晶片訊號連接的主動元件及被動元件。
- 一種板上封裝顯示元件的製作方法,包含: 將多數成陣列排列的微發光二極體晶片直接固設於一基板的表面,並令該等微發光二極體晶片彼此呈一間隙; 利用噴印方式於該間隙填置不透光材料,於該間隙形成一遮光層,得到一半成品; 準備一模具,該模具於鄰近該半成品的微發光二極體晶片的表面設有一離型層,且該離型層於鄰近該等微發光二極體晶片的表面具有一由凹凸結構形成的微圖案;及 將該半成品以該等微發光二極體晶片朝向該離型層的方向置於該模具中,利用模注方式於該半成品與該離型層之間注入一透明的光學膠材並令該光學膠材硬化,其中,該光學膠材於硬化的同時會將該離型層的微圖案轉印,而於硬化的光學膠材表面形成一圖案化微結構,以得到一覆蓋該遮光層及該等微發光二極體晶片的抗眩光層。
- 如請求項7所述的板上封裝顯示元件的製作方法,還包含一第一鍍膜步驟,利用低溫真空鍍膜方式,於該抗眩光層表面沉積形成一抗反射層。
- 如請求項8所述的板上封裝顯示元件的製作方法,還包含一第二鍍膜步驟,利用塗佈或低溫真空鍍膜方式,於該抗反射層表面形成一抗指紋層。
- 如請求項9所述的板上封裝顯示元件的製作方法,其中,該基板具有一電連接線路,該等微發光二極體晶片與該電連接線路電連接,該板上封裝顯示元件製作方法還包含一電子元件設置步驟,於該基板反向該等微發光二極體晶片的表面設置多數電子元件,且該等電子元件與至少部分的該等微發光二極體晶片電連接。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109103482A TWI719823B (zh) | 2020-02-05 | 2020-02-05 | 板上封裝顯示元件及其製造方法 |
CN202110074122.5A CN113224040A (zh) | 2020-02-05 | 2021-01-20 | 板载芯片封装显示元件及其制造方法 |
US17/163,750 US20210242373A1 (en) | 2020-02-05 | 2021-02-01 | Chip on board display device and method for making the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109103482A TWI719823B (zh) | 2020-02-05 | 2020-02-05 | 板上封裝顯示元件及其製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI719823B TWI719823B (zh) | 2021-02-21 |
TW202131466A true TW202131466A (zh) | 2021-08-16 |
Family
ID=75746003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109103482A TWI719823B (zh) | 2020-02-05 | 2020-02-05 | 板上封裝顯示元件及其製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20210242373A1 (zh) |
CN (1) | CN113224040A (zh) |
TW (1) | TWI719823B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210399041A1 (en) * | 2020-06-18 | 2021-12-23 | Seoul Semiconductor Co., Ltd. | Light emitting module having a plurality of unit pixels, method of fabricating the same, and displaying apparatus having the same |
CN115437180B (zh) * | 2022-09-02 | 2024-04-30 | 深圳市云密芯显示技术有限公司 | 一种led灯板及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002502128A (ja) * | 1998-02-02 | 2002-01-22 | ユニアックス コーポレイション | X−yアドレス指定可能な電気的マイクロスイッチアレイとこれを使用したセンサマトリックス |
JP4940088B2 (ja) * | 2007-10-12 | 2012-05-30 | 株式会社 日立ディスプレイズ | バックライト装置及び液晶表示装置 |
TW200929514A (en) * | 2007-12-20 | 2009-07-01 | Chi Mei Optoelectronics Corp | Liquid crystal display apparatus, backlight module and light emitting diode unit |
TWI533483B (zh) * | 2010-08-09 | 2016-05-11 | Lg伊諾特股份有限公司 | 發光裝置 |
TW201419063A (zh) * | 2012-11-06 | 2014-05-16 | Primax Electronics Ltd | 觸控顯示器 |
US9123866B2 (en) * | 2013-09-26 | 2015-09-01 | Seoul Viosys Co., Ltd. | Light emitting device having wide beam angle and method of fabricating the same |
US20170277324A1 (en) * | 2014-09-05 | 2017-09-28 | Amosense Co., Ltd. | Touch sensor for touch screen panel and manufacturing method therefor |
JP2017027872A (ja) * | 2015-07-27 | 2017-02-02 | ソニー株式会社 | 表示装置 |
JP6969553B2 (ja) * | 2016-07-04 | 2021-11-24 | Agc株式会社 | フィルムおよびその製造方法 |
US20180120580A1 (en) * | 2016-10-28 | 2018-05-03 | 3M Innovative Properties Company | Light control film with varied viewing angle |
CN109841165B (zh) * | 2017-11-29 | 2021-11-16 | 利亚德光电股份有限公司 | 小间距led显示模块及其制作方法 |
TWI658301B (zh) * | 2017-12-22 | 2019-05-01 | 財團法人工業技術研究院 | 顯示裝置 |
US11101410B2 (en) * | 2018-05-30 | 2021-08-24 | Creeled, Inc. | LED systems, apparatuses, and methods |
KR102582647B1 (ko) * | 2018-10-10 | 2023-09-25 | 삼성디스플레이 주식회사 | 커버 윈도우 부재 및 이를 갖는 표시 장치 |
JP6680349B1 (ja) * | 2018-12-28 | 2020-04-15 | 日亜化学工業株式会社 | 発光モジュール |
-
2020
- 2020-02-05 TW TW109103482A patent/TWI719823B/zh active
-
2021
- 2021-01-20 CN CN202110074122.5A patent/CN113224040A/zh active Pending
- 2021-02-01 US US17/163,750 patent/US20210242373A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN113224040A (zh) | 2021-08-06 |
US20210242373A1 (en) | 2021-08-05 |
TWI719823B (zh) | 2021-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8486733B2 (en) | Package having light-emitting element and fabrication method thereof | |
US10600354B2 (en) | Small pitch direct view display and method of making thereof | |
TWI719823B (zh) | 板上封裝顯示元件及其製造方法 | |
CN107093680B (zh) | 金属辅助电极及使用其的显示器件的制造方法 | |
TWI740438B (zh) | 微型發光二極體的轉移方法 | |
CN109087935A (zh) | 显示基板及其制备方法、显示面板 | |
US20210159448A1 (en) | Packaging method for display panel, display device and manufacturing method thereof | |
TWM609847U (zh) | 顯示面板及顯示器 | |
CN111682094B (zh) | 一种led发光背板及其生产方法 | |
TWI531091B (zh) | 發光二極體封裝結構及其封裝方法 | |
EP1732132B1 (en) | Method for packaging an array-type modularized light-emitting diode structure | |
US10026757B1 (en) | Micro-light emitting display device | |
US20200035657A1 (en) | Electroluminescent device and method of manufacturing the same | |
CN103378263A (zh) | 发光二极管封装结构的制造方法 | |
TWI720418B (zh) | 半導體發光單元及其封裝方法 | |
TW202224035A (zh) | 發光顯示裝置的封裝方法及封裝結構 | |
TWI806751B (zh) | 半導體密封封裝結構及其製作方法 | |
WO2023208222A1 (zh) | 显示面板及其制造方法 | |
CN115274945B (zh) | 一种Micro-LED芯片封装方法 | |
JP7333844B2 (ja) | ディスプレイパネル | |
CN203192849U (zh) | 发光模块用基板 | |
TWI650882B (zh) | 可撓式超薄發光體結構及其製作方法 | |
TW201530836A (zh) | 發光二極體模組之構造 | |
WO2020244147A1 (zh) | 一种led面板灯及led面板灯的制作方法 | |
WO2021237606A1 (zh) | 一种 led 发光背板及其生产方法 |