TW202124969A - Adjustable microelectromechanical system (MEMS) probe card and assembling method thereof which can shorten the spacing by improving the bending performance of the probe to solve the problem caused by the restriction of the spacing - Google Patents
Adjustable microelectromechanical system (MEMS) probe card and assembling method thereof which can shorten the spacing by improving the bending performance of the probe to solve the problem caused by the restriction of the spacing Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
- G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
- G01R1/06744—Microprobes, i.e. having dimensions as IC details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
Abstract
Description
本發明所公開的內容係有關一種可調型微機電系統(MEMS)探針卡。The content disclosed in the present invention relates to an adjustable microelectromechanical system (MEMS) probe card.
除非在本說明書中有明確指示,否則在本部分中進行說明的內容並不是與本申請的申請專利範圍相關的現有技術,並不能因為包含於本部分而被認定為是現有技術。Unless there is a clear instruction in this specification, the content described in this section is not the prior art related to the scope of the patent application of this application, and cannot be regarded as prior art because it is included in this section.
微機電系統(MEMS,Micro-Electro-Mechanical System)是一種透過微製造技術將機械元件、感測器、執行器以及電子設備集成到如矽基板等普通基板上的系統。Micro-Electro-Mechanical System (MEMS, Micro-Electro-Mechanical System) is a system that integrates mechanical components, sensors, actuators, and electronic devices on common substrates such as silicon substrates through micro-manufacturing technology.
在利用積體電路(IC)製程程序(例如互補金屬氧化物半導體(CMOS)、雙極(Bipolar)或雙極互補金屬氧化物半導體(BICMOS)工程)製造出電子設備的同時,利用為了形成機械以及電子機械裝置而對矽晶圓的特定部分進行選擇性蝕刻或追加全新結構層的可相容的“微加工(micromachining)”工程製造出微機械元件。While using integrated circuit (IC) process procedures (such as complementary metal oxide semiconductor (CMOS), bipolar (Bipolar) or bipolar complementary metal oxide semiconductor (BICMOS) engineering) to manufacture electronic devices, the use of As well as electronic mechanical devices, a compatible "micromachining" process that selectively etches specific parts of the silicon wafer or adds a new structural layer to manufacture micromechanical components.
微機電系統(MEMS)裝置包括微米級別(米的100萬分之1)單位的微型結構體。Microelectromechanical system (MEMS) devices include microstructures in units of micrometers (one millionth of a meter).
微機電系統(MEMS)技術的重要部分是源自於積體電路(IC)技術。例如,與積體電路相同,微機電系統(MEMS)結構體是以薄膜形態實現並利用光刻方法形成圖案。An important part of MEMS technology is derived from integrated circuit (IC) technology. For example, like the integrated circuit, the micro-electromechanical system (MEMS) structure is realized in the form of a thin film and patterned by photolithography.
而且與積體電路相同,微機電系統(MEMS)結構體是通過一系列的蒸鍍、光刻以及蝕刻在晶圓上進行製造。And like the integrated circuit, the micro-electromechanical system (MEMS) structure is manufactured on the wafer through a series of evaporation, photolithography, and etching.
微機電系統(MEMS)結構體的複雜性越高,其微機電系統(MEMS)裝置的製造工程的複雜性也會隨之增加。The higher the complexity of the MEMS structure, the more complicated the manufacturing engineering of the MEMS device.
例如,微機電系統(MEMS)探針的排列能夠被裝配成探針卡。探針卡是電子測試系統與待測半導體晶圓之間的介面。For example, the array of microelectromechanical system (MEMS) probes can be assembled into a probe card. The probe card is the interface between the electronic test system and the semiconductor wafer to be tested.
探針卡在測試系統與晶圓上的回路之間提供電氣路徑,因此可以在對晶圓上的晶片進行切割和封裝之前在晶圓級別上對回路進行有效性檢查以及測試。The probe card provides an electrical path between the test system and the circuit on the wafer, so the validity of the circuit can be checked and tested at the wafer level before the wafer on the wafer is diced and packaged.
如圖1所示,在微機電系統(MEMS)探針卡M中結合有上部板100’以及下部板200’且在其內部安裝有多個探針500’,在各個探針500’的上端結合有微型電子邏輯電路(MLC)700’,在微型電子邏輯電路(MLC)700’上連接有多個矽仲介層750’,矽仲介層750’形成於印刷電路板800’上,而在印刷電路板800’的上部結合有上部固定件900’。As shown in FIG. 1, an upper board 100' and a lower board 200' are combined in a microelectromechanical system (MEMS) probe card M, and a plurality of probes 500' are installed in the probe card M, and the upper end of each probe 500' Combined with a micro electronic logic circuit (MLC) 700', a plurality of silicon interposers 750' are connected to the micro electronic logic circuit (MLC) 700'. The silicon interposers 750' are formed on the printed circuit board 800', and the printed circuit board The upper part of the circuit board 800' is combined with an upper fixing member 900'.
探針800’是一定長度的主體的下端尖銳形成且在上端形成有頭部的導電性針狀體,因為考慮到彎曲彈性而以具有預應力的彎曲一定曲率的狀態結合。The probe 800' is a conductive needle-shaped body formed with a sharp lower end of a body of a certain length and a head formed on the upper end, and is combined in a pre-stressed and bent state with a certain curvature in consideration of bending elasticity.
當設備與探針下端的前端部接觸時探針會發生彎曲,而頻繁的彎曲變形會造成疲勞的累積並進一步導致變形或受損的問題。When the device is in contact with the front end of the lower end of the probe, the probe will bend, and frequent bending deformation will cause the accumulation of fatigue and further lead to the problem of deformation or damage.
[先行技術文獻] (專利文獻1)大韓民國專利申請第10-2008-0000248號。[Advanced Technical Literature] (Patent Document 1) Korean Patent Application No. 10-2008-0000248.
本發明所公開的內容的目的在於提供一種可以通過改善探針的彎曲性能而縮短間距並藉此解決因為間距的制約而導致的問題的可調型微機電系統(MEMS)探針卡及其裝配方法。The purpose of the disclosure of the present invention is to provide a tunable microelectromechanical system (MEMS) probe card and its assembly which can shorten the pitch by improving the bending performance of the probe and thereby solve the problems caused by the restriction of the pitch method.
實施例的目的可以透過在由上部板以及下部板結合而成且在其內部安裝有多個探針的微機電系統(MEMS)探針卡中,在上部板上形成多個第1針孔,包括形成於第1針孔的一側的第1空間以及形成於第1針孔的另一側的第2空間,上述第1空間的寬度大於第2空間的可調型微機電系統(MEMS)探針卡達成。The purpose of the embodiment can be achieved by forming a plurality of first pinholes on the upper plate in a micro-electromechanical system (MEMS) probe card which is formed by a combination of an upper plate and a lower plate and has a plurality of probes installed therein. A tunable microelectromechanical system (MEMS) including a first space formed on one side of the first pinhole and a second space formed on the other side of the first pinhole, the width of the first space is greater than that of the second space The probe card is reached.
在實施例中,探針包括以一定長度形成的主體、在上述主體的上端形成的頭部以及在主體的下端尖銳形成的前端部,上述主體的寬度a小於厚度b。In an embodiment, the probe includes a main body formed with a certain length, a head formed at the upper end of the main body, and a tip portion formed sharply at the lower end of the main body, and the width a of the main body is smaller than the thickness b.
根據所公開的實施例,可以透過改善探針的彎曲性能而縮短間距,而且可以透過上部板與下部板結合之後的各個第1針孔與第2針孔的位置偏差而進一步提升探針的彎曲性能,從而在與設備接觸時更加彈性地實現彎曲。According to the disclosed embodiment, the pitch can be shortened by improving the bending performance of the probe, and the bending of the probe can be further improved by the position deviation of the first pinhole and the second pinhole after the upper plate and the lower plate are combined. Performance, so that it can bend more elastically when in contact with the device.
接下來,配合圖式對較佳實施例進行詳細的說明如下。Next, the preferred embodiment is described in detail in conjunction with the drawings as follows.
在下述內容中進行說明的實施例只是為了便於具有本發明所屬技術領域具有通常知識者可以輕易地實施本發明,本發明的技術思想以及範疇並不因此而受到限定。The embodiments described in the following content are only for the convenience of those who have ordinary knowledge in the technical field to which the present invention belongs can easily implement the present invention, and the technical idea and scope of the present invention are not limited thereby.
此外,圖式中所圖示的構成要素的大小或形狀等可能會為了說明的明確性以及便利性而進行誇張圖示,而且在考慮到本發明的構成以及作用的前提下做出特殊定義的術語可能會因為使用者、應用者的意圖或慣例而發生變化,而上述術語應以本說明書中的整體內容為基礎做出定義。In addition, the size or shape of the constituent elements illustrated in the drawings may be exaggerated for clarity and convenience of description, and are specifically defined in consideration of the structure and function of the present invention. Terms may change due to the intentions or conventions of users and users, and the above-mentioned terms should be defined on the basis of the overall content in this specification.
圖1係對適用實施例的可調型微機電系統(MEMS)探針卡進行圖示的截面圖,圖2係對適用實施例的可調型微機電系統(MEMS)探針卡的裝配順序進行圖示的示意圖,圖3係對適用實施例的探針的變形前以及變形後進行圖示的示意圖,圖4係對適用實施例的探針的另一實施例進行圖示的正面圖。FIG. 1 is a cross-sectional view illustrating an adjustable microelectromechanical system (MEMS) probe card of an applicable embodiment, and FIG. 2 is an assembly sequence of an adjustable microelectromechanical system (MEMS) probe card of an applicable embodiment For schematic diagrams, FIG. 3 is a schematic diagram illustrating the probe of the applicable embodiment before and after deformation, and FIG. 4 is a front view of another embodiment of the probe of the applicable embodiment.
如圖1至圖4所示,適用實施例的可調型微機電系統(MEMS)探針卡,
在由上部板100以及下部板100結合而成且在其內部安裝有多個探針500的微機電系統(MEMS)探針卡中,
在上述上部板100上形成多個第1針孔310,包括形成於第1針孔310的一側的第1空間321以及形成於第1針孔310的另一側的第2空間322,上述第1空間321的寬度大於第2空間322。As shown in Figures 1 to 4, the adjustable microelectromechanical system (MEMS) probe card of the applicable embodiment,
In a micro-electromechanical system (MEMS) probe card that is formed by combining the
在下部板200上形成可供探針500結合的多個第2針孔220。下部板200包括與上部板100的第1空間321對應的第3空間323以及與上部板100的第2空間322對應的第4空間324,上述第4空間324的寬度大於第3空間323。The
較佳地,第1針孔310以及第2針孔220透過相互錯位配置而形成位置偏差。借助於如上所述的位置偏差,在上述板100以及下部板200結合時,結合到各個第1針孔310以及第2針孔220中的探針500將進入壓曲狀態。Preferably, the
上述探針500包括以一定長度形成的主體520、在上述主體520的上端形成的頭部540以及在主體520的下端尖銳形成的前端部560,上述主體520的寬度a小於厚度b。The
如圖4所示,適用其他實施例的探針500b在主體520的兩側面形成多個凹槽522。As shown in FIG. 4, the
藉此,可以減小形成凹槽522的部位的厚度並增加彈性力,從而提升彎曲特性。Thereby, the thickness of the portion where the
參閱圖3,P1為探針被壓曲之前的狀態,而P2為探針被壓曲之後的狀態。Referring to Figure 3, P1 is the state before the probe is buckled, and P2 is the state after the probe is buckled.
① 在寬度a小於厚度b即a<b的情況下,
探針500的壓曲的變形方向為-X、+X方向,即左右彎曲可能比較容易,但是會因為厚度b變大(針的厚度變厚)而導致間距的制約。① When the width a is less than the thickness b, that is, a<b,
The direction of deformation of the buckling of the
② 反之,在寬度a以及厚度b相同即a=b的情況下,
探針500的壓曲的變形方向將難以預測(-X、+X方向,-Z、+Z方向)。
從而,會因為厚度b變大(幀的厚度變厚)而導致間距的制約。② Conversely, when the width a and the thickness b are the same, that is, a=b,
The direction of deformation of the buckling of the
③ 較佳地,如圖3的截面圖所示,
在寬度a大於厚度b即a>b的情況下,
探針500的壓曲的變形方向為-Z、+Z方向。
從而,可以透過厚度b的變小(幀的厚度變薄)而縮短間距。
藉此,可以在縮短間距的同時滿足截面長度a>b的條件。③ Preferably, as shown in the cross-sectional view of Figure 3,
In the case where the width a is greater than the thickness b, that is, a>b,
The deformation directions of the buckling of the
接下來,將參閱圖2對裝配工程進行說明。Next, the assembly process will be explained with reference to FIG. 2.
(步驟1)
將上部板100以及下部板200配置成相互相向的狀態。
此時,探針500將處於直線狀態。(step 1)
The
(步驟2)
接下來,通過移動上部板100而將其排列成與下部板200一致的狀態。
在上述過程中,探針500的主體520將發生彎曲而進入壓曲狀態。(Step 2)
Next, by moving the
(步驟3)
當從下部板200的第2針孔220裸露到外部的探針500的前端560與安置在設備600中的晶圓板發生接觸時,在加壓力的作用下探針500的主體520將發生彎曲並進一步加劇其壓曲狀態。
如上所述,因為處於寬度大於厚度的狀態,因此上述探針500的壓曲將主要在前後方向即-Z、+Z方向上發生。
透過如上所述的探針500的厚度差異,可以縮短間距。(Step 3)
When the
雖然結合較佳實施例進行了說明,但是本發明所屬技術領域具有通常知識者可以在不脫離發明的要旨以及範圍的情況下進行各種修改以及變形,而如上所述的變更以及修改都屬於隨附的發明申請專利範圍的範圍之內。Although described in conjunction with the preferred embodiments, those with ordinary knowledge in the technical field to which the present invention pertains can make various modifications and variations without departing from the spirit and scope of the invention, and the above-mentioned changes and modifications are all attached herewith. The invention is within the scope of the patent application.
100:上部板
200:下部板
220:第2針孔
310:第1針孔
321:第1空間
322:第2空間
323:第3空間
324:第4空間
500:探針
500b:探針
520:主體
522:凹槽
540:頭部
560:前端部
600:設備
100’:上部板
200’:下部板
500’:探針
700’:微型電子邏輯電路(MLC)
750’:矽仲介層
800’:印刷電路板
900’:上部固定件
a:寬度
b:厚度
M:微機電系統(MEMS)探針卡100: upper plate
200: lower plate
220: 2nd pinhole
310: 1st pinhole
321: first space
322: Second Space
323: The 3rd Space
324: The 4th Space
500:
圖1係對適用實施例的可調型微機電系統(MEMS)探針卡進行圖示的截面圖。 圖2係對適用實施例的可調型微機電系統(MEMS)探針卡的裝配順序進行圖示的示意圖。 圖3係對適用實施例的探針的變形前以及變形後進行圖示的示意圖。 圖4係對適用實施例的探針的另一實施例進行圖示的正面圖。FIG. 1 is a cross-sectional view illustrating a tunable microelectromechanical system (MEMS) probe card of the applicable embodiment. 2 is a schematic diagram illustrating the assembly sequence of the adjustable micro-electromechanical system (MEMS) probe card of the applicable embodiment. Fig. 3 is a schematic diagram illustrating the probe before and after the deformation of the applied embodiment. Fig. 4 is a front view illustrating another embodiment of the probe to which the embodiment is applied.
100’:上部板100’: Upper plate
200’:下部板200’: Lower plate
500’:探針500’: Probe
700’:微型電子邏輯電路(MLC)700’: Miniature Electronic Logic Circuit (MLC)
750’:矽仲介層750’: Silicon Intermediate Layer
800’:印刷電路板800’: Printed Circuit Board
900’:上部固定件900’: Upper fixing
M:微機電系統(MEMS)探針卡M: Microelectromechanical system (MEMS) probe card
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JP3099947B2 (en) * | 1997-02-03 | 2000-10-16 | 日本電子材料株式会社 | Vertical probe card |
KR101225300B1 (en) | 2006-06-27 | 2013-01-22 | 엘지디스플레이 주식회사 | Liquid crystal display device and fabricating method for the same |
JP2010091349A (en) * | 2008-10-06 | 2010-04-22 | Japan Electronic Materials Corp | Vertical probe card |
JP5868239B2 (en) * | 2012-03-27 | 2016-02-24 | 株式会社日本マイクロニクス | Probes and probe cards |
KR101299725B1 (en) * | 2012-04-30 | 2013-08-28 | 디플러스(주) | Bucking probe pin |
JP2014112046A (en) * | 2012-12-05 | 2014-06-19 | Micronics Japan Co Ltd | Probe, probe assembly, and probe card |
TWI530691B (en) * | 2015-02-04 | 2016-04-21 | 旺矽科技股份有限公司 | Probe head and upper guider plate |
KR101859388B1 (en) * | 2016-09-19 | 2018-06-28 | 피엠피(주) | Vertical Probe Card |
KR101886536B1 (en) * | 2016-12-27 | 2018-08-07 | 주식회사 텝스 | Straight needle probe card with adjustable probe force |
TWI644104B (en) * | 2017-03-17 | 2018-12-11 | 旺矽科技股份有限公司 | Probe, probe head and method of manufacturing probe head |
KR20180131312A (en) * | 2017-08-04 | 2018-12-10 | 주식회사 새한마이크로텍 | Vertical probe pin and probe pin assembly with the same |
KR101962644B1 (en) * | 2017-08-23 | 2019-03-28 | 리노공업주식회사 | A test probe and test device using the same |
CN109581006B (en) * | 2017-09-29 | 2021-09-07 | 中华精测科技股份有限公司 | Probe device and rectangular probe thereof |
TWI646332B (en) * | 2017-11-01 | 2019-01-01 | 中華精測科技股份有限公司 | Probe card device and signal transfer module thereof |
KR101980865B1 (en) * | 2017-11-28 | 2019-05-23 | 주식회사 에스디에이 | Probe Card |
TWI641840B (en) * | 2018-04-16 | 2018-11-21 | 中華精測科技股份有限公司 | Probe head and rectangular probe thereof |
TWI642942B (en) * | 2018-04-18 | 2018-12-01 | 中華精測科技股份有限公司 | Probe card device and rectangular probe thereof |
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