TW202105764A - 電子器件之製造方法 - Google Patents

電子器件之製造方法 Download PDF

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TW202105764A
TW202105764A TW109111429A TW109111429A TW202105764A TW 202105764 A TW202105764 A TW 202105764A TW 109111429 A TW109111429 A TW 109111429A TW 109111429 A TW109111429 A TW 109111429A TW 202105764 A TW202105764 A TW 202105764A
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solar cell
wafer
electronic device
cell structure
film
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TW109111429A
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TWI843839B (zh
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石崎順也
古屋翔吾
秋山智弘
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日商信越半導體股份有限公司
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Abstract

本發明係一種電子器件之製造方法，係將具有「包含了太陽電池構造之驅動電路」的電子器件加以製造的方法，其包含以下步驟：將具有「在初始基板上藉由磊晶成長而形成且由化合物半導體構成之複數獨立太陽電池構造」的第一晶圓、與形成有複數獨立驅動電路的第二晶圓加以接合而成為接合晶圓，以使得該複數太陽電池構造與該複數驅動電路互相疊合的步驟；進行配線，以使得在該接合晶圓中可從該複數太陽電池構造分別將電力供給至該複數驅動電路的步驟；及切割該接合晶圓，藉此製造具有包含了該太陽電池構造之驅動電路的電子器件的步驟。藉此，本發明提供一種電子器件之製造方法，可在一個晶片上具備驅動電路與太陽電池構造，並抑制製造成本。

Description

電子器件之製造方法
本發明係關於一種電子器件之製造方法。
IoT（Internet of Things：物聯網）用之感測器等電子器件，需要小型且以低功率損耗驅動的晶片，並且要求價格便宜。在如此之電子器件中，對於穩定動作而言，較為理想係將電源設於外部，並藉由外部供給電力驅動各種感測器，但配線所需的設置成本較大，而使價格便宜的感測器設置變得困難。從而，IoT用之感測器需要實現不必電線作為驅動電源的器件。
又，電子器件為了價格便宜必須為小型。為了實現以上條件，電子器件中必須以一個晶片實現驅動電路及驅動電源電力接收元件。以無線獲得電源的方式雖可選擇微波或是光線中的任一者，但微波因距離而導致的輸出減衰較大，不適合作為分散配置之IoT用感測器的供電方式。
從而，就IoT感測器用途而言，以光無線供電方式較為適當。
光無線供電的電力接收元件為太陽電池，但難以將驅動電路與電力接收元件設於一個晶片。為此，可先設置驅動電路範圍，並在有別於驅動電路範圍的區域中，形成電力接收用（光接收用）的太陽電池元件。
然而，設置驅動電路的Si(矽)系太陽電池的電力接收效率不高，並且需要較大的面積。
其結果，難以製作價格便宜的元件。為了提高電力接收元件的效率，亦可在太陽電池部磊晶成長由化合物半導體構成之太陽電池。
然而，若欲在Si基板上磊晶成長化合物半導體太陽電池，則與Si基板的晶格不匹配會較大。其結果，為了提高結晶品質而形成高效率之電力接收用太陽電池，必須精心構製用於磊晶成長的緩衝層等，導致磊晶成本增加。
其結果，亦會使元件製造成本變得昂貴。 ［習知技術文獻］ ［專利文獻］
［專利文獻1］日本特開2018-148074號公報 ［專利文獻2］日本特開2013-4632號公報 ［專利文獻3］日本特開2008-210886號公報
［發明所欲解決之問題］
作為在電子器件設置追加元件的技術而言，有將功能層與基體加以接合的技術。作為有關功能層與基體之接合的技術，列舉有專利文獻1～3。在專利文獻1中，記載了以BCB（Benzocyclobutene：苯環丁烯）接合功能層與基體的技術。在專利文獻2中，揭露了犧牲層蝕刻的技術。在專利文獻3中，揭露了在驅動電路基板倒裝接合晶片的技術。然而，關於在一個晶片中具備驅動電路與太陽電池構造的電子器件之製造方法的技術，在專利文獻1～3中並未揭露。
本發明係鑑於上述問題而完成者，其目的在於提供一種電子器件之製造方法，可在一個晶片中具備驅動電路與太陽電池構造，並且抑制製造成本。 ［解決問題之手段］
為了達成上述目的，本發明係提供一種電子器件之製造方法，係將具有「包含了太陽電池構造之驅動電路」的電子器件加以製造之方法，其特徵包含以下步驟： 將具有「在初始基板上藉由磊晶成長而形成且由化合物半導體構成之複數獨立太陽電池構造」的第一晶圓、及形成有複數獨立驅動電路的第二晶圓加以接合而成為接合晶圓，以使得該複數太陽電池構造與該複數驅動電路互相疊合的步驟； 進行配線，以使得在該接合晶圓中，可從該複數太陽電池構造分別將電力供給至該複數驅動電路的步驟；及 將該接合晶圓加以切割，藉此將具有「包含了該太陽電池構造之驅動電路」之電子器件加以製造的步驟。
如此，藉由將具有複數獨立太陽電池構造之第一晶圓、與形成有複數獨立驅動電路之第二晶圓接合，以使得該複數太陽電池構造與該複數驅動電路互相疊合，可使電子器件之面積極小化。從而，可抑制具有「包含了太陽電池構造之驅動電路」之電子器件的製造成本。
又，較佳係使用熱固性黏接劑進行該接合。
如此，藉由使用熱固性黏接劑進行接合，可在低溫下進行接合。又，因此，由於不會因接合所需要之熱處理而使太陽電池構造及驅動電路部的物理性質改變，故可在太陽電池構造及驅動電路形成後進行接合步驟。
此時，可將該熱固性黏接劑的厚度設在2.0μm以上。
如此，藉由以2.0μm以上的厚度設置熱固性黏接劑，可強化黏接力。
又，較佳係在進行該接合之後，從該接合晶圓分離該初始基板。
如此，藉由將初始基板從接合晶圓分離，可再使用初始基板，亦可使成本降低。
又，在本發明之電子器件之製造方法中，可藉由以下步驟進行該配線：設置接墊電極，以使得在進行該接合前，可在該第二晶圓中對該驅動電路供給電力；形成太陽電池構造用電極，以使得在進行該接合之前及後的至少一者中，可從該第一晶圓的太陽電池構造取出電力；及將該接墊電極及該太陽電池構造用電極電性連接。
在本發明的電子器件之製造方法中，具體而言，可透過上述的方式進行配線。 ［發明效果］
在本發明的電子器件之製造方法中，可將具有「包含了太陽電池構造之驅動電路」的電子器件之面積極小化。從而，可抑制電子器件的製造成本。
如上述般IoT用的感測器等電子器件需要小型且以低功率損耗驅動之晶片，並且要求價格便宜。對於穩定動作而言，較為理想係將電源設於外部，並藉由外部供給電力驅動各種感測器，但配線所需的設置成本較大，而使價格便宜的感測器設置變得困難。從而，IoT用之感測器需要實現不必電線作為驅動電源的器件。本案發明人重複進行探討發現：只要將具有「在基板上藉由磊晶成長而形成且由化合物半導體構成之複數獨立太陽電池構造」的第一晶圓、及形成有複數獨立驅動電路的第二晶圓加以接合，以使得該複數太陽電池構造與該複數驅動電路互相疊合，並進行電極設置及配線，以使得可從該複數太陽電池構造分別將電力供給至該複數驅動電路後，進行切割，藉此將具有「包含了太陽電池構造之驅動電路」的電子器件加以製造，便可將電子器件之面積極小化，並可抑制製造成本，因而完成本發明。
本發明係將具有「包含了太陽電池構造之驅動電路」的電子器件加以製造之方法，其包含以下步驟。亦即：（a）將具有「在初始基板上藉由磊晶成長而形成且由化合物半導體構成之複數獨立太陽電池構造」的第一晶圓、及形成有複數獨立驅動電路的第二晶圓加以接合而成為接合晶圓，以使得該複數太陽電池構造與該複數驅動電路互相疊合的步驟；（b）進行配線，以使得在該接合晶圓中，可從該複數太陽電池構造分別將電力供給至該複數驅動電路的步驟；及（c）將該接合晶圓進行切割，藉此將具有「包含了該太陽電池構造之驅動電路」的電子器件加以製造的步驟。
以下，基於圖式說明本發明之實施態樣。
（第一實施態樣） 首先，準備具有「在初始基板上藉由磊晶成長而形成且由化合物半導體構成之複數獨立太陽電池構造」的第一晶圓。在圖1及圖2係顯示第一晶圓100的概略。第一晶圓100係在初始基板10上藉由磊晶成長，而形成複數太陽電池構造101。
更具體而言，可如以下方式形成太陽電池構造，但太陽電池構造可採用由化合物半導體構成之各種構造。首先，準備第一晶圓100，該第一晶圓100係在由GaAs(砷化鎵)構成的初始基板10上，形成例如厚度0.5μm的p-GaAs緩衝層（未圖示）、例如厚度0.3μm的p-AlAs(砷化鋁)犧牲層11、例如厚度0.3μm的p-GaAs接觸層12、例如厚度0.2μm的p-In0.5 Ga0.5 P(磷化銦鎵)窗口層13、例如厚度0.5μm的p-GaAs射極層14、例如厚度3.5μm的n-GaAs基極層15、例如厚度0.05μm的由n-In0.5 Ga0.5 P構成之BSF（Back Surface Field：背面電場）層16，並具有太陽電池構造。在圖1的階段中，尚未進行元件分離，因此太陽電池構造並未獨立。太陽電池構造的各層之構成及組成、厚度等可適當設計。例如，此處In0.5 Ga0.5 P只要在假性晶格匹配的條件下進行疊設即可，並且只要膜厚在臨界膜厚以下，便不限定於例示之組成。
接著，在第一晶圓100上藉由P-CVD法（電漿-化學氣相沉積法）形成例如0.1μm的SiO2 膜17，並在SiO2 膜17上藉由旋轉塗佈法形成例如0.2μm的BCB（苯環丁烯）膜18作為熱固性的黏接劑。BCB膜（亦即，熱固性黏接劑）18的厚度較佳係在0.05μm以上，更佳係在0.1μm以上。如此之厚度的BCB膜18可實現更良好的晶圓接合。BCB膜18的厚度（熱固性黏接劑的厚度）可設在2.0μm以下，再者可設在1.0μm以下。若為如此之BCB膜18的厚度，則可抑制成本的上升。又，若為如此之厚度，則可減少因接合壓力而產生之變形量，且對於分離圖案之側面的附著量亦不會增加，而可容易地進行其後之犧牲層蝕刻及圖案化步驟。
在實施態樣中，係例示在第一晶圓100形成有SiO2 膜17的構造，但SiO2 膜17係BCB膜18的黏接增強層。因此，並不一定要設置SiO2 膜17。作為可在本發明使用之熱固性黏接劑較佳係使用BCB（苯環丁烯）樹脂，但並不限定於此。
在BCB膜18的塗佈後，較佳係藉由100℃左右的熱處理預先蒸發溶劑。
又，亦可將BCB膜等熱固性黏接劑的厚度設在2.0μm以上。藉由將熱固性黏接劑以2.0μm以上的厚度設置，可強化黏接力。特別是，在進行犧牲層蝕刻以分離初始基板，並僅留下磊晶層時，可更有效地防止磊晶層剝離。在使熱固性黏接劑成為3.0μm以上之厚度這樣的厚膜時，亦可藉由在一次塗佈黏接劑後，進行加熱之硬化處理，並進一步進行塗佈而疊加的手法來形成厚膜。
接著，在BCB膜18上藉由光蝕刻步驟，形成「在預定進行用於使太陽電池構造獨立之元件分離的部分（元件分離預定部）形成有開口之光阻圖案」。藉由在含氟氣體（NF3 (三氟化氮)或是SF6 (六氟化硫)等）與Ar(氬)氣體的混合電漿環境氣體下進行ICP（Inductive Coupled Plasma：電感耦合電漿）處理，而進行BCB膜18及SiO2 膜17的圖案成形。
關於ICP處理的條件，例如可將環境氣體壓力設為1.0Pa、將NF3 與Ar氣體的總流量設為50sccm。然而，只要係可進行BCB/SiO2 之圖案成形的條件，並不限定於此條件。
在BCB膜18/SiO2 膜17的開口圖案成形後，去除光阻圖案。例如，可進行灰化處理而去除光阻，但並不限定於此，亦可藉由有機清洗或其他脫脂處理而去除。
在蝕刻BCB膜18/SiO2 膜17的開口時，對GaAs層而言係以酒石酸過氧化氫混合溶液加以蝕刻，對InGaP而言係以鹽酸燐酸混合液加以蝕刻，以蝕刻元件分離預定部（參照圖2）。又，由於酒石酸過氧化氫混合溶液對於InGaP具有蝕刻選擇性，鹽酸燐酸混合液對於GaAs具有蝕刻選擇性，故可為了蝕刻各層，而適當切換。如圖2所示，藉由以上步驟，可準備具有由化合物半導體構成之複數獨立太陽電池構造101的第一晶圓100。
接著，有別於上述第一晶圓100，準備形成有複數獨立驅動電路的第二晶圓。第二晶圓較佳係以在矽（Si）基板形成驅動電路的方式而加以準備。具體而言，如圖3所示，準備在Si基板（驅動電路基板20）上具有驅動電路與輸入用之電力接收墊部（接墊電極22、23）的第二晶圓200。驅動電路係配合所需之功能而形成，但較佳係在電力接收墊（接墊電極22、23）連接有防止來自太陽電池構造之電流逆流的整流用二極體之構成。在圖3中，係顯示形成有複數獨立驅動電路201（以虛線包圍之部分為各個驅動電路）的例子。
接著，較佳係將SiO2 膜21以例如0.1μm的厚度成膜在驅動電路基板表面（參照圖3）。
在實施態樣中，係例示在驅動電路基板上形成有SiO2 膜21的構造，但由於SiO2 膜21為上述熱固性黏接劑，亦即BCB膜的黏接增強層，因此並不一定要設置SiO2 膜21。
接著，如圖4所示，將第一晶圓100及第二晶圓200接合而成為接合晶圓，以使複數太陽電池構造101與複數驅動電路201互相疊合。接合後，第一晶圓100及第二晶圓200係構成接合晶圓300（在圖4中係顯示緊接於接合之前的態樣）。此處，更具體而言，係將第一晶圓100及第二晶圓200進行對準，而使第二晶圓200側之接墊（接墊電極22、23）的位置成為預定位置，並將第一晶圓100及第二晶圓200相向而疊合，例如一邊施加300℃的熱與250N/cm2 左右的壓力一邊進行接合（參照圖4）。經由BCB膜18的接合溫度較佳係設在150℃以上，更佳係設在210℃以上。BCB硬化時間係越高溫越快，但從盡可能抑制驅動基板之特性變化的觀點來看，較佳係設在400℃以下，更佳係設在320℃以下。
又，接合壓力較佳係設在2N/cm2 以上，更佳係設在5N/cm2 以上。雖然接合壓力越大越容易獲得接合，故希望越大越好，但由於因接合壓力而產生之變形量會變大，且附著於分離圖案之側面的附著量會增加，而使其後之犧牲層蝕刻及圖案化步驟變得困難，因此較佳係設在500N/cm2 以下，更佳係設在250N/cm2 以下。
在接合後，進行犧牲層11的蝕刻。在由AlAs所構成之犧牲層的情況，蝕刻係以含氟溶液進行。由於元件分離預定部會形成開口，因此含氟液會迅速地到達AlAs犧牲層，以蝕刻犧牲層。由於含氟液對犧牲層以外的層具有蝕刻選擇性，故僅會選擇性地去除AlAs犧牲層。藉由使犧牲層消失，作為太陽電池構造101的磊晶層會殘留於第二晶圓200，而GaAs初始基板10會分離（參照圖5）。
分離之GaAs初始基板10可再使用於磊晶成長用基板。初始基板10亦可根據需要再次拋光表面而加以使用。
接著，藉由光蝕刻法對接合晶圓300形成「一部分形成有開口之圖案」，並形成BSF層16露出之圖案。在形成BSF層16露出之圖案後，去除光阻（參照圖6）。為了使BSF層16露出，可使用前述選擇蝕刻液，亦可應用ICP等乾式製程。
在BSF層16的露出部形成後，例如以0.1μm厚的SiO2 膜31被覆整個晶圓。接著，藉由光蝕刻法，形成「一部分形成有開口之圖案」，並形成「p-GaAs接觸層12上的一部分與BSF層16上的一部分形成有開口之圖案」，且以含氟溶液進行蝕刻，藉此將SiO2 膜31的一部分形成開口。在將SiO2 膜31的一部分形成開口後，去除光阻（參照圖7）。
接著，在SiO2 開口部形成電極32、33（圖8）。
例如，與p-GaAs接觸層12接觸之電極33，係以含有Be(鈹)的Au(金)形成0.5μm厚的電極，與BSF層16接觸的電極32，係以含有Ge(鍺)的Au形成0.5μm厚的電極。電極材料並不限定於此，只要能形成歐姆接觸亦可選擇任何材料。
接著，藉由光蝕刻法形成「被覆驅動電路部上之SiO2 膜21形成有開口的光阻圖案」。形成開口後，例如藉由以含氟溶液所進行之蝕刻，而使驅動電路部的接墊電極22、23露出（圖9的露出部35）。
接著，將驅動基板上之接墊電極22、23與磊晶層部之電極（電極32、33）連結而形成金屬配線36、37。藉由光蝕刻法形成開口圖案，例如蒸鍍0.5μm的Al層，並藉由剝離法形成配線圖案（參照圖10）。藉此，在接合晶圓300中進行配線，以使得可從複數太陽電池構造101分別將電力供給至複數驅動電路201。
在此第一實施態樣中，係藉由以下步驟進行配線：在進行接合前，於第二晶圓200中設置接墊電極22、23，以使得可將電力供給至驅動電路201（圖3）；在進行接合後，形成太陽電池構造用電極32、33，以使得從可第一晶圓100的太陽電池構造101取出電力；及將接墊電極22、23及太陽電池構造用電極32、33電性連接。
以上述方式，製作圖10所示之接合晶圓（電子器件製造用晶圓）400。在接合晶圓400中，係形成複數電子器件構造301。藉由切割如此之接合晶圓400，並個別分離電子器件構造301，可製造具有「包含了太陽電池構造101之驅動電路201」的電子器件。
（第二實施態樣） 接著，說明將第一實施態樣之中段步驟加以變更而成的本發明之第二實施態樣。第二實施態樣基本上係與第一實施態樣相同，但配線方式有所不同。在進行第二實施態樣中所形成之電子器件用的接合前，於第二晶圓200設置接墊電極22、23，以使得可對驅動電路供給電力此點係與第一實施態樣相同，但在進行接合前，預先形成太陽電池構造用電極52，以使得可從第一晶圓的太陽電池構造取出電力此點係與第一實施態樣不同（參照圖11）。以下，係著眼於與第一實施態樣之差異點，來說明第二實施態樣。與第一實施態樣本質上相同的構成器件係使用相同符號而說明。
首先，準備具有「在初始基板上藉由磊晶成長而形成且由化合物半導體構成之複數獨立太陽電池構造」的第一晶圓。此處準備的第一晶圓，係與第一實施態樣相同，在初始基板10上藉由磊晶成長，而形成複數太陽電池構造（參照圖1及圖2）。更具體而言，係準備具有太陽電池構造的第一晶圓100，該太陽電池構造係在在由GaAs所構成之初始基板10上形成有例如厚度0.5μm的p-GaAs緩衝層、例如厚度0.3μm的p-AlAs犧牲層11、例如厚度0.3μm的p-GaAs接觸層12、例如厚度0.2μm的p-In0.5 Ga0.5 P窗口層13、例如厚度0.5μm的p-GaAs射極層14、例如厚度3.5μm的n-GaAs基極層15、例如厚度0.05μm的由n-In0.5 Ga0.5 P所構成的BSF層16。太陽電池構造的各層之構成或組成、厚度等可適當設計。例如，此處In0.5 Ga0.5 P只要在假性晶格匹配的條件下進行疊設即可，並且只要膜厚在臨界膜厚以下，便不限定於例示之組成。
接著，形成與第一晶圓100之BSF層16之一部分接觸的N型電極52（圖11參照）。如此預先形成電極52此點係與第一實施態樣的差異。以下，關於圖1～9，係置換成如圖11般形成有與BSF層16之一部分接觸的N型電極52者而加以說明。
N型電極52係以含有Ge的Au形成例如0.5μm厚的電極。電極材料並不限定於此，只要能形成歐姆接點，亦可選擇任何材料。
接著，在形成有N型電極52的第一晶圓100上，藉由P-CVD法形成例如0.1μm的SiO2 膜17，並在SiO2 膜17上，藉由旋轉塗佈法，形成例如0.2μm的BCB（苯環丁烯）膜18作為熱固性的黏接劑。BCB膜（亦即，熱固性黏接劑）18的厚度較佳係在0.05μm以上，更佳係在0.1μm以上。如此之厚度的BCB18膜，可實現更良好的晶圓接合。BCB膜18的厚度（熱固性黏接劑的厚度）可設在2.0μm以下，再者可設在1.0μm以下。若為如此之BCB膜18的厚度，則可抑制成本的上升。又，若為如此之厚度，則可減少因接合壓力而產生之變形量，且附著於分離圖案之側面的附著量亦不會增加，而可容易地進行其後之犧牲層蝕刻及圖案化步驟。
在本實施態樣中，係例示了在第一晶圓100形成有SiO2 膜17的構造，但SiO2 膜17為BCB膜18的黏接增強層。因此，並不一定要設置SiO2 膜17。
在BCB膜18的塗佈後，較佳係藉由100℃左右的熱處理預先蒸發溶劑。
又，與第一實施態樣相同，亦可將BCB膜等熱固性黏接劑的厚度設在2.0μm以上。
接著，在BCB膜18上，藉由光刻步驟形成「在元件分離預定部形成有開口之光阻圖案」。藉由在含氟氣體（NF3 或是SF6 等）與Ar氣體的混合電漿環境氣體下進行ICP（電感耦合電漿）處理，而進行BCB膜18及SiO2 膜17的圖案成形。
關於ICP處理的條件，例如可將環境氣體壓力設為1.0Pa、將NF3 與Ar氣體的總流量設為50sccm。然而，只要係可進行BCB/SiO2 之圖案成形的條件，並不限定於此條件。
在BCB膜18/SiO2 膜17的開口圖案成形後，去除光阻圖案。例如，可進行灰化處理而去除光阻，但並不限定於此，亦可藉由有機清洗或其他脫脂處理而去除。
在蝕刻BCB膜18/SiO2 膜17的開口時，對GaAs層而言係以酒石酸過氧化氫混合溶液加以蝕刻，對InGaP而言係以鹽酸燐酸混合液加以蝕刻，以蝕刻元件分離預定部（參照圖2）。又，由於酒石酸過氧化氫混合溶液對InGaP具有蝕刻選擇性，鹽酸燐酸混合液對GaAs具有蝕刻選擇性，故可為了蝕刻各層而適當切換。如圖2所示，藉由以上步驟，可準備具有由化合物半導體構成之複數獨立太陽電池構造的第一晶圓100。
接著，在BCB膜18上，藉由光刻步驟形成「在N電極部52形成有開口的光阻圖案」。
藉由在含氟氣體（NF3 或是SF6 等）與Ar氣體的混合電漿環境氣體下進行ICP處理，而進行BCB膜及SiO2 膜的圖案成形。
接著，準備形成有複數獨立驅動電路的第二晶圓。如圖3所示，準備在Si基板上具有驅動電路與輸入用之電力接收墊部（接墊電極22、23）的第二晶圓200。驅動電路係配合所需之功能而形成，但較佳係在電力接收墊（接墊電極22、23）連接有防止來自太陽電池構造之電流逆流的整流用二極體之構成。此時，如圖11所示，接墊電極22其位置係形成為「與形成於第一晶圓之N型電極52一致」。
接著，較佳係將SiO2 膜21以例如0.1μm的厚度成膜在驅動電路基板表面（參照圖3）。
在本實施態樣中，係例示在驅動電路基板上形成有SiO2 膜21之構造，但由於SiO2 膜21係上述熱固性黏接劑亦即BCB膜的黏接增強層，因此並不一定要設置SiO2 膜21。
接著，將第一晶圓100及第二晶圓200接合而成為接合晶圓，以使得複數太陽電池構造與複數驅動電路互相疊合。接合後，第一晶圓100及第二晶圓200係構成接合晶圓300。更具體而言，將第一晶圓100及第二晶圓200進行對準，以使得第二晶圓200側之接墊（接墊電極22、23）的位置成為預定位置，並將第一晶圓100及第二晶圓200相向而疊合，例如一邊施加300℃的熱與250N/cm2 左右的壓力，一邊進行接合（參照圖4）。經由BCB膜18之接合溫度較佳係設在150℃以上，更佳係設在210℃以上。BCB硬化時間係越高溫越快，但從盡可能抑制驅動基板之特性變化的觀點來看，較佳係設在400℃以下，更佳係設在320℃以下。在第二實施態樣中，特別是如圖11所示，以使第二晶圓200的接墊電極22與形成於第一晶圓100之N型電極52位置一致的方式加以接合。
又，接合壓力較佳係設在2N/cm2 以上，更佳係設在5N/cm2 以上。雖然接合壓力越大越容易獲得接合，故希望越大越好，但由於因接合壓力所產生的變形量會變大，且附著於分離圖案之側面的附著量會增加，而使其後之犧牲層蝕刻及圖案化步驟變得困難，因此較佳係設在500N/cm2 以下，更佳係設在250N/cm2 以下。
接合後，進行犧牲層11的蝕刻。在AlAs之犧牲層的情況，蝕刻係以含氟溶液進行。由於元件分離預定部會形成開口，因此含氟液會迅速地到達AlAs犧牲層，並蝕刻犧牲層。由於含氟液對犧牲層以外的層具有蝕刻選擇性，故僅會選擇性地去除AlAs犧牲層。藉由使犧牲層消失，作為太陽電池構造的磊晶層會殘留於第二晶圓200，而GaAs初始基板10會分離（參照圖5）。
分離之GaAs初始基板10可再使用於磊晶成長用基板。初始基板10亦可根據需要再次拋光表面而加以使用。
接著，藉由光蝕刻法，對接合晶圓300形成「一部分形成有開口之圖案」，並形成BSF層16露出之圖案。在BSF層16露出之圖案形成後，去除光阻（參照圖6）。為了使BSF層16露出，可使用前述之選擇蝕刻液，亦可應用ICP等的乾式製程。
在BSF層16的露出部形成後，例如以0.1μm厚的SiO2 膜31被覆整個晶圓。接著，藉由光蝕刻法，形成「一部形成有開口之圖案」，並形成「p-GaAs接觸層12上之一部分形成有開口之圖案」，且藉由以含氟溶液進行蝕刻而將SiO2 膜31的一部分形成開口。在將SiO2 膜31的一部形成開口後，去除光阻（參照圖7）。
接著，在SiO2 開口部形成電極53。
與p-GaAs接觸層12接觸的電極53，係以含有Be的Au形成例如0.5μm厚的電極。電極材料並不限定於此，只要能形成歐姆接點可選擇任何材料。
接著，藉由光蝕刻法形成「在被覆驅動電路部上之SiO2 膜21形成有開口之光阻圖案」。在開口後，例如藉由以含氟溶液所進行之蝕刻，而使驅動電路部的接墊電極23露出（圖9的露出部35）。
接著，將驅動基板上的接墊電極23與磊晶層部的電極（電極53）連結而形成金屬配線37。藉由光蝕刻法形成開口圖案，例如蒸鍍0.5μm的Al層，並藉由剝離法形成配線圖案（參照圖11）。在第二實施態樣中，如上所述，接墊電極22與N型電極52已進行位置對準（圖11參照），故不需要再次進行藉由金屬配線所進行之配線。
以上述方式，製作圖11所示之接合晶圓（電子器件製造用晶圓）500，藉由切割接合晶圓500，可製造具有「包含了太陽電池構造之驅動電路」的電子器件。
由於太陽電池（PV）會因為面積增大而使接收電力增加，故面積較大者在驅動電力此點係較為有利。在以往例子中，太陽電池構造部與驅動電路部係設置於同一面，並且為了使接收電力增加而使元件的面積變大。然而，在本發明中，由於係將電力接收部設在驅動電路部上，因此可將元件面積極小化。
又，特別是，藉由在接合時使用熱固性黏接劑，可將接合時溫度設為300℃之低溫。因此，由於不會有因接合所需之熱處理而導致驅動電路部的物理性質變化，故可在驅動電路形成後進行接合步驟。由於接合時的溫度為300℃之低溫，不會有因接合所需之熱處理而導致太陽電池構造部的物理性質變化，故可在太陽電池構造部的電極形成後進行接合步驟。
又，在本發明中，由於可將驅動電路基板與太陽電池構造部個別地形成，故有助於產率的提高。
又，在本發明中，由於將太陽電池構造部的輸出用電極與驅動電路部之輸入用電極的位置進行對準而接合，故可使配線形成精度與伴隨配線形成的產率提高。
又，在本發明中，係以各別步驟進行太陽電池構造部形成與驅動電路形成，藉此可防止伴隨疊設後之缺陷產生所致的產率降低。
又，在驅動電路部形成太陽電池構造的磊晶層時，伴隨緩衝層形成之材料成本係佔較大的比重，但藉由將太陽電池構造形成基板及步驟，與驅動電路形成基板及步驟分別分離，可各自以成本最少且最適合之設計形成，並可使總成本降低。
又，太陽電池構造之磊晶層的成本價格較高，初始基板的成本佔較大的比重。由於先進行太陽電池構造部的元件分離後再進行接合，故可應用磊晶剝離的製程，並透過剝離之初始基板的再次使用，可使磊晶成本降低。
又，本發明並不限定於上述實施態樣。上述實施態樣僅為例示，只要係具有與本發明之申請專利範圍所記載之技術思想實質上相同之構成，並發揮同樣作用效果的任何態樣，均包含於本發明的技術範圍內。
10:初始基板 11:p-AlAs犧牲層 12:p-GaAs接觸層 13:p-In0.5 Ga0.5 P窗口層 14:p-GaAs射極層 15:n-GaAs基極層 16:BSF層 17,21,31:SiO2 膜 18:BCB膜 20:驅動電路基板 22,23:接墊電極 32,33,52,53:電極 35:露出部 36,37:金屬配線 100:第一晶圓 101:太陽電池構造 200:第二晶圓 201:驅動電路 300,400,500:接合晶圓 301:電子器件構造
圖1係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示第一晶圓的概略圖。 圖2係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示形成有黏接層之第一晶圓的概略圖。 圖3係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示第二晶圓的概略圖。 圖4係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示第一晶圓與第二晶圓之接合的概略圖。 圖5係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示從接合晶圓分離初始基板的概略圖。 圖6係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示接合晶圓之一部分加工的概略圖。 圖7係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示接合晶圓之SiO2 被覆的概略圖。 圖8係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示接合晶圓之電極形成的概略圖。 圖9係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示接合晶圓之接墊電極之露出的概略圖。 圖10係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示接合晶圓之配線的概略圖。 圖11係顯示本發明之電子器件之製程之進展過程的概略圖，並顯示由第二實施態樣所達成之接合晶圓的概略圖。
10:初始基板
11:p-AlAs犧牲層
12:p-GaAs接觸層
13:p-In0.5Ga0.5P窗口層
14:p-GaAs射極層
15:n-GaAs基極層
16:BSF層
100:第一晶圓

Claims (6)

  1. 一種電子器件之製造方法，係將具有包含了太陽電池構造之驅動電路的電子器件加以製造之方法，其特徵包含以下步驟： 將具有在初始基板上藉由磊晶成長而形成且由化合物半導體構成之複數獨立太陽電池構造的第一晶圓、與形成有複數獨立驅動電路的第二晶圓加以接合而成為接合晶圓，以使得該複數太陽電池構造與該複數驅動電路互相疊合的步驟； 進行配線，以使得在該接合晶圓中，可從該複數太陽電池構造分別將電力供給至該複數驅動電路的步驟；及 切割該接合晶圓，藉此將具有包含了該太陽電池構造之驅動電路的電子器件加以製造的步驟。
  2. 如請求項1所述之電子器件之製造方法，其中， 使用熱固性黏接劑進行該接合。
  3. 如請求項2所述之電子器件之製造方法，其中， 將該熱固性黏接劑的厚度設在2.0μm以上。
  4. 如請求項1至3中任一項所述之電子器件之製造方法，其中， 在進行完該接合後，從該接合晶圓分離該初始基板。
  5. 如請求項1至3中任一項所述之電子器件之製造方法，其中， 藉由以下程序，進行該配線： 設置接墊電極，以使得在進行該接合前，可於該第二晶圓中對該驅動電路供給電力； 形成太陽電池構造用電極，以使得在進行該接合之前及後的至少一者中，可從該第一晶圓的太陽電池構造取出電力；及 將該接墊電極及該太陽電池構造用電極電性連接。
  6. 如請求項4所述之電子器件之製造方法，其中， 藉由以下程序，進行該配線： 設置接墊電極，以使得在進行該接合前，可於該第二晶圓中對該驅動電路供給電力； 形成太陽電池構造用電極，以使得在進行該接合之前及後的至少一者中，可從該第一晶圓的太陽電池構造取出電力；及 將該接墊電極及該太陽電池構造用電極電性連接。
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