TW202101594A - 提供摻雜矽的方法 - Google Patents

提供摻雜矽的方法 Download PDF

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TW202101594A
TW202101594A TW109109406A TW109109406A TW202101594A TW 202101594 A TW202101594 A TW 202101594A TW 109109406 A TW109109406 A TW 109109406A TW 109109406 A TW109109406 A TW 109109406A TW 202101594 A TW202101594 A TW 202101594A
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substrate
layer
silicon oxide
diffusion barrier
barrier layer
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普魯夏坦 庫瑪
更瑋 蔣
史貴凡迪 巴頓 Ｊ 凡
騰飛 繆
喬瑟夫 Ｒ 亞伯
艾里恩 拉芙依
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美商蘭姆研究公司
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Abstract

提供一種摻雜基板的方法。在該基板的表面形成氧化矽擴散障礙層。至少一摻雜劑層被沉積在氧化矽擴散障礙層上。沉積一帽層在至少一層的摻雜劑層之上以形成基板、氧化矽擴散障礙層、至少一層摻雜劑層、及帽層的一堆疊。退火該堆疊。移除帽層、至少一種摻雜劑層，及氧化矽擴散障礙層。

Description

提供摻雜矽的方法
[相關申請案的交互參照]本申請案主張以下優先權：美國專利申請案第62/822423號，申請於西元2019年3月22日，上述申請案的全部內容藉由參照全部於此納入。
本揭露關聯於半導體元件的形成。更具體而言，本揭露關聯於有摻雜矽區域的半導體元件的形成。
在半導體元件的形成，一基板，如一矽基板，可能以摻雜劑加以摻雜。有時候使用均勻摻雜分布。其他時候則使用非均勻摻雜分布。
為了實現前述及根據本揭露的目的，提供一種摻雜基板的方法。在一基板的表面上形成氧化矽擴散障礙層。至少一層摻雜劑層沉積在氧化矽擴散障礙層上。帽層沉積在至少一層摻雜劑層上以形成基板、氧化矽擴散障礙層、至少一層摻雜劑層，及帽層的一堆疊。退火該堆疊。移除帽層、至少一層摻雜劑層、及氧化矽擴散障礙層。
以下將在本揭露的實施方法與結合附隨圖示，更詳細的描述本揭露的這些與其他特徵。
本揭露現在將參考如隨附圖示所示的若干較佳實施例加以詳細描述。在以下的敘述中，數個具體細節為了提供對本揭露完整的理解加以闡明。然而，顯而易見地，對熟悉本技藝者，本揭露可能不以若干或全部這些具體細節加以實踐。在其他情況下，為免不必要地模糊本揭露，習知的處理步驟且/或結構並未詳細描述。
硼矽玻璃（boron silicate glass, BSG）膜的沉積係使用氧化硼（B2 O3 ）及氧化矽（SiO2 ）的奈米層合堆疊並在頂端加上覆蓋氧化物以防外部擴散。在氧化硼與SiO2 沉積的期間，因為氧化電漿與矽基板的交互作用，會形成無控制的介面氧化物。這通常導致在矽基板的邊緣的介面氧化物厚度較薄，導致較高的硼擴散。
為了增進對實施例的了解，圖1是一實施例的流程圖。提供一基板（步驟104）。圖2A是在一實施例中的基板200的橫剖面示意圖。基板200可能是在其他層上形成的多晶矽。
在基板200的表面上形成氧化矽擴散障礙層。在此實施例中，使用原子層沉積（atomic layer deposition, ALD）製程以沉積氧化矽沉積層。圖3A是處理室300的切開俯視示意圖，該處理室有四個處理站可能被用在原子層沉積製程。圖3B為圖3A所示之處理室300的切開示意側視圖。處理室300有一室壁304。四個處理站位於室壁304之內。每個處理站含有一基座312，該基座擔任基板支撐件以支撐晶圓308、噴淋頭316（用以提供氣體至位於噴淋頭316之下的晶圓308）、以及歧管320，該歧管連接噴淋頭316至氣源322。在此實施例中，氣源322包含第一氣源328、第二氣源332、及主要吹掃氣源336。次要吹掃出氣口324與次要吹掃氣源326呈流體連通。在此實施例中，次要吹掃出氣口324呈圍繞歧管320的圓柱形套環之形狀。該圓柱形套環有複數個孔使次要吹掃氣體能夠沿徑向方向在噴淋頭316頂部上方向外流動。載環310圍繞晶圓308。載環310的一部分在晶圓308下方。載環310可能為介電陶瓷材料，如氧化鋁。載環310可能被用於將晶圓308移入及移出處理室300及移動於各種不同的室之間。控制器335可控制地連接到氣源322、次要吹掃氣源326、射頻（radio frequency, RF）功率系統340、及真空系統344。此一室的一個例子為由Lam Research Corporation of Fremont, CA 所製造的Striker® Oxide系統。基板200在晶圓308之上以堆疊的方式形成。
圖4係為了形成氧化矽擴散障礙的原子層沉積製程的流程圖。提供次要吹掃氣體的流（步驟404）。在此例中，該次要吹掃氣體為氧（O2 ）。氧為該次要吹掃氣體的至少一種成分氣體。該次要吹掃氣體348由次要吹掃出氣口324流過噴淋頭316的頂部以形成次要吹掃氣體幕352在噴淋頭316的外緣周圍。
同時伴隨著該次要吹掃氣體的流動（步驟404），設有一原子層沉積製程（步驟408），其沉積了一ALD層。該原子層沉積製程（步驟408）包含複數的循環，其中每一循環包含提供第一反應氣體（步驟412）、吹掃第一反應氣體（步驟414）、提供第二反應氣體（步驟416），及吹掃第二反應氣體（步驟418）。原子層沉積製程（步驟408）的配方的示例提供了第一反應氣體，如400 sccm的胺基矽烷（步驟412）。含矽的前驅層被沉積。在0.4秒後，將經由噴淋頭316的第一反應氣體的流動停止。第一吹掃氣體經噴淋頭316流至站（步驟414）。在此例中，該第一吹掃氣體為氬（Ar）。該第一吹掃氣體的流動係加以停止。第二反應氣體經噴淋頭316流至處理室內（步驟416）。在該例中，第二反應氣體不含氧且包含惰性氣體，如13000 sccm的Ar。將第二反應氣體轉變為電漿。在此例中，以13.56 (百萬赫茲) MHz的頻率提供100到500瓦的RF功率。來自第二反應氣體的電漿以及次要吹掃氣體將沉積的含矽前驅層轉變為氧化矽，其為ALD層的一部分。在0.25秒後，進入處理室的第二反應氣體的流動停止。吹掃氣體流入處理室內，以吹掃第二反應氣體（步驟418）。第二吹掃氣體的流動停止。循環接著自將前驅氣體流入處理室的步驟開始重複。循環會重複直到氧化矽擴散障礙層完成。
圖2B為基板200在氧化矽擴散障礙層204沉積之後的橫剖面示意圖。不預期地發現，藉由不經噴淋頭提供氧氣而在次要吹掃氣體的流動中提供氧，會形成氧化矽擴散障礙層204，其在基板200外緣周圍較在基板200中心上方來得厚。
接著，至少一層摻雜劑層沉積在氧化矽擴散障礙層204之上（步驟112）。在此例中，五層摻雜劑層形成在氧化矽擴散障礙層204之上。圖2C為基板200在五層摻雜劑層形成在氧化矽擴散障礙層204之上後的橫剖面示意圖。在此例中，五層摻雜劑層為第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220，及第五含硼層224。在此實施例中，第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220，及第五含硼層224皆為氧化硼層。陰影表示硼的所在。第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220，及第五含硼層224可能以ALD製程沉積。
如此的ALD製程可能使包含硼酸三甲酯（TMB）的第一摻雜劑反應氣體流動。第一摻雜劑反應氣體形成為電漿以沉積含硼前驅層。在第一摻雜劑反應氣體的吹掃之後，使包含氧的第二摻雜劑反應氣體流動。第二摻雜劑反應氣體形成為電漿以自含硼前驅層形成氧化硼層。該製程重複複數的循環。在其他實施例中，第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220，及第五含硼層224可藉由電漿輔助原子層沉積（PEALD）製程、電漿輔助化學氣相沉積（PECVD）製程，或化學氣相沉積（CVD）製程加以形成。在其他實施例中，其他相似的製程可能被用以沉積第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220，及第五含硼層224。
帽層沉積在摻雜劑層之上（步驟116）。在此實施例中，帽層以PEALD製程、ALD製程、PECVD，或CVD製程中的至少其中之一加以沉積。在此實施例中，該帽層係氧化矽帽層。在其他實施例中，其他相似的製程可能被用來沉積帽層。圖2D是在帽層228已沉積而形成堆疊232之後基板200的橫剖面示意圖。較理想的情況為，帽層228足夠稠密以限制來自堆疊232的摻雜劑的外擴散。
退火堆疊232（步驟120）。在此例中，退火製程係原位執行或藉由在不同的爐中加熱而執行。堆疊232在氮（nitrogen, N2 ）或氬蒙氣中被加熱至超過700o C的溫度。退火製程將摻雜劑自第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220，及第五含硼層224經由氧化矽擴散障礙層204轉移到基板200。圖2E是退火製程後的堆疊232的橫剖面示意圖。陰影表示基板200的摻雜以硼，並且自第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220，及第五含硼層224之硼的空乏。
帽層228、第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220、第五含硼層224、及氧化矽擴散障礙層204自堆疊232移除（步驟124）。使用氫氟酸（HF）的一濕蝕刻可能被用以自堆疊232移除帽層228、第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220、第五含硼層224，及氧化矽擴散障礙層204。圖2F是在移除帽層228、第一含硼層208、第二含硼層212、第三含硼層216、第四含硼層220、第五含硼層224，及氧化矽擴散障礙層204之後的堆疊232的橫剖面示意圖。剩下摻雜基板200。在此實施例中，該摻雜基板200為BSG。
藉由具有獨立步驟的氧化矽擴散障礙層204的形成（步驟104），氧化矽擴散障礙層204的厚度可能被控制。氧化矽擴散障礙層204的被控制的厚度提供對基板200的摻雜劑的濃度分布的控制。此實施例提供在整個晶圓的下伏矽元件更均勻的摻雜。一目標是使晶圓上的每個晶粒中的每個元件性能相匹配。
圖3C是圖3B所示之區域3C的放大視圖。第一間隙364是晶圓308與載環310間的一段距離。第二間隙368是載環310與基座312間的一段距離。O形環360在基座312與晶圓308之間。如果第一間隙364被增加以增強在晶圓308邊緣的電漿，被增強的電漿因為稠化導致在晶圓308邊緣周圍的氧化矽擴散障礙層204的較低的厚度。在此實施例中，第一間隙364減少，所以氧化矽擴散障礙層204在基板308邊緣周圍的厚度增加。
在其他實施例中，沉積至少一層摻雜劑層在氧化矽擴散障礙層204之上（步驟112）的操作沉積了氧化磷（P2 O5 ）的第一含磷層。第一含磷層可能藉由ALD製程或就氧化硼沉積所述製程加以沉積。其他實施例可能沉積一含砷層以提供砷摻雜劑。在其他實施例中，第二摻雜劑反應氣體含有一惰性氣體與氧。在若干實施例中，在一晶圓上的基板200的一區域可能以硼摻雜，且基板200的另一區域可能以另外的摻雜劑摻雜，如磷或砷。在不同的實施例中，基板200可能為矽（Si）、碳化矽（SiC）、砷化鎵（GaAs），或氮化鎵（GaN）。基板200可能為晶圓或在沉積在晶圓上的一層。
在另外的實施例中，與沉積在靠近基板邊緣的含矽前驅層相比，在靠近基板中心沉積一較厚層的含矽前驅層。在如此的實施例中，沉積的氧化矽擴散障礙層204在靠近基板200中心處係與在基板200邊緣處相比較厚。
在另一實施例中，藉由加熱基板200，可能形成氧化矽擴散障礙層204（步驟108）。基板200是被非均勻加熱的，使得氧化矽擴散障礙層204的厚度是非均勻的。例如，與在基板200的中心相比，基板200周圍的邊緣係加熱至較高的溫度。因此，與基板200的中心相比，氧化矽擴散障礙層204在基板200的邊緣較厚。在此例中，氧化矽自基板200的頂端面形成，而非將氧化矽沉積在基板200上。可能藉由在整個基座312提供非均勻加熱，以提供基板200的非均勻加熱。氧在加熱矽的期間加以提供，以形成氧化矽。在若干實施例中，基板200被加熱至在200o C至900o C的範圍間的一溫度，以形成氧化矽擴散障礙層204。更具體而言，基板200被加熱至在200o C至650o C的範圍間的一溫度，以形成氧化矽擴散障礙層204。甚至更具體而言，基板200被加熱至在200o C至400o C的範圍間的一溫度，以形成氧化矽擴散障礙層204。
在不同的實施例中，基座形式的基板支撐件有數個加熱區。在一實施例中，基板支撐件有超過20個獨立控制的加熱區。獨立控制的加熱區被用來獨立地加熱基板的不同部分達到不同溫度。這些區可能為環狀或長方形或其他不同的形狀及不同形狀的組合。在不同的實施例中，為了改正其他非均勻性，獨立控制的加熱區可能設定為在整個基板提供一非均勻溫度分布，以產生一厚度較均勻的氧化矽擴散障礙層204。該其他非均勻性可能是非均勻氣流。該較均勻的氧化矽擴散障礙層204可能被用以提供整個基板200更均勻的摻雜濃度。在其他實施例中，該非均勻溫度分布提供一調整過的氧化矽擴散障礙層204，其有著非均勻厚度。該基板200非均勻地加熱，使得較厚的氧化矽擴散障礙層204形成在基板200的較高溫的區域上。在若干實施例中，該氧化矽擴散障礙層204的非均勻厚度可能被用以提供基板200較均勻濃度的摻雜。在其他實施例中，氧化矽擴散障礙層204的非均勻厚度可能被用以提供基板200的調整過的非均勻濃度摻雜。氧化矽擴散障礙層204的非均勻厚度可能被用以控制摻雜濃度的均勻性。
在例示實施例中，次要吹掃氣體可能包含O2 、N2 、Ar、一氧化碳（CO）、二氧化碳（CO2 ）、臭氧（O3 ），或氦（He）。在其他例示實施例中，次要吹掃氣體可能為O2 與N2 的混合物，有著介在3:1至1:3的範圍間的分子數流量比。在其他例示實施例中，次要吹掃氣體可能為O2 與Ar或He的混合物，有著介在3:1至1:3的範圍間的分子數流量比。其他氣體，其對ALD製程為惰性且在ALD製程期間不被電漿點燃，可能被用在其他實施例中。因為該次要吹掃氣體不被ALD製程點燃且為惰性，該次要吹掃氣體提供相鄰站之間的隔離，避免串擾。
圖5是高階方塊圖，表示電腦系統500，其適合用於實現在實施例中使用的控制器335。該電腦系統可能有許多物理形式，範圍涵蓋自積體電路、印製電路板、及小型手持裝置到巨大的超級電腦。電腦系統500包含一個或更多的處理器502，且進一步可以包含電子顯示裝置504（用以顯示圖像、文字，或其他資料）、主記憶體506（例如，隨機存取記憶體（RAM））、儲存裝置508（例如，硬式磁碟機）、可移式儲存裝置510（例如，光碟機）、人機介面裝置512（例如，鍵盤、觸控螢幕、輔助鍵盤、滑鼠或其他點選裝置），及通信介面514（例如，無線網路介面）。該通信介面514允許軟體與資料在電腦系統500及外部裝置間透過鏈接傳輸。該系統可能也包含通信基礎架構516（例如，通信匯流排、交錯匯流條，或網路），其連接前述提及的裝置/模組。
藉由通信介面514傳輸的資訊可能以訊號（如電子、電磁、光學，或其他能夠被通信介面514接收的訊號）的形式，其經由一通信鏈接，該通信鏈接攜帶訊號且可能使用導線或電纜、光纖、電話線、蜂窩式無線電話鏈接、射頻鏈接，及/或其他通信通道加以實現。以如此的通信介面，可以預期在施行上述的方法步驟的進程中該一個或更多的處理器502可能接收來自網路的資訊，或可能輸出資訊至網路。除此之外，方法實施例可能單獨地在處理器上執行，或者可能偕同分擔該處理一部分的遠端處理器在網路（如網際網路）上執行。
所謂「非暫態電腦可讀取媒體」係用於普遍地指涉如主要記憶體、次要記憶體、可移式儲存器，及儲存裝置（如硬碟、快閃記憶體、磁片驅動記憶體、光碟，及持續記憶體的其他形式），且不應被理解為涵蓋暫態標的，如載波或訊號。電腦碼的例子包含機器碼（如由編譯器所產生的），及包含更高階碼的檔案（其被電腦以直譯器執行）。電腦可讀取媒體也可能為電腦碼，該電腦碼由電腦資訊訊號傳輸，該訊號被包含於載波中且代表一連串可被處理器執行的指令。
雖然本揭露已描述在數個較佳實施例的方面，仍存有改變、修改，及各種不同的替代等價者，以上皆在本揭露的範圍中。值得注意的是，本揭露的實施方法及設備存有許多替代方式。因此，以下所附的專利請求項旨在被理解為包含所有如此的改變、修改、置換，及各種不同的替代等價者，皆在本揭露的真實精神與範圍之中。
104:步驟 108:步驟 112:步驟 116:步驟 120:步驟 124:步驟 200:基板 204:氧化矽擴散障礙層 208:第一含硼層 212:第二含硼層 216:第三含硼層 220:第四含硼層 224:第五含硼層 228:帽層 232:堆疊 300:處理室 304:室壁 308:晶圓 310:載環 312:基座 316:噴淋頭 320:歧管 322:氣源 324:次要吹掃出氣口 326:次要吹掃氣源 328:第一氣源 332:第二氣源 335:控制器 336:主要吹掃氣源 340:射頻功率系統 344:真空系統 348:次要吹掃氣體 352:次要吹掃氣體幕 360:O形環 364:第一間隙 368:第二間隙 404:步驟 408:步驟 412:步驟 414:步驟 416:步驟 418:步驟 500:電腦系統 502:處理器 504:電子顯示裝置 506:主記憶體 508:儲存裝置 510:可移式儲存裝置 512:人機介面裝置 514:通信介面 516:通信基礎架構
本揭露之闡明，以例示的方式，且非限制性的方式，在附隨圖示的圖中，並且其中相同的參考數字指涉相同的元件，且其中：
圖1為一實施例的流程圖。
圖2A到F為依照一實施例處理的基板的橫剖面示意圖。
圖3A是可能被用於一實施例的一處理室的切開俯視示意圖。
圖3B是圖3A所示之實施例的切開示意側視圖。
圖3C是圖3B中的區域3C的放大視圖。
圖4是更細節檢視原子層沉積製程的流程圖。
圖5是可能被用於實踐一實施例的電腦系統的示意圖。

Claims (13)

  1. 一種摻雜一基板的方法，包含： 在該基板的表面上形成氧化矽擴散障礙層； 沉積至少一摻雜劑層在該氧化矽擴散障礙層上； 沉積一帽層在該至少一摻雜劑層之上以形成該基板、該氧化矽擴散障礙層、該至少一摻雜劑層、及該帽層的一堆疊； 退火該堆疊；及 移除該帽層、該至少一摻雜劑層、及該氧化矽擴散障礙層。
  2. 如請求項1之方法，其中該基板有外緣及中心，且其中與在該基板的中心上相比，該氧化矽擴散障礙層在該基板的外緣上較厚。
  3. 如請求項2之方法，其中形成該氧化矽擴散障礙層的步驟包含加熱該基板，其中該基板的外緣被加熱至一溫度，該溫度高於該基板之中心的溫度。
  4. 如請求項1之方法，其中形成該氧化矽擴散障礙層的步驟包含提供一原子層沉積製程。
  5. 如請求項4之方法，其中該原子層沉積製程包含複數的循環，其中每一循環包含： 流動包含一含矽前驅物的第一反應氣體； 沉積含矽前驅層； 停止該第一反應氣體的流動； 流動第二反應氣體； 提供一RF功率以轉換該第二反應氣體為電漿；及 轉換該含矽前驅層為氧化矽；及 停止該第二反應氣體的流動。
  6. 如請求項5之方法，其中該基板位於處理室中的噴淋頭下方，其中流動該第二反應氣體的步驟自該噴淋頭流動該第二反應氣體，該方法進一步包含在該處理室之中從該噴淋頭外部流動含氧的次要吹掃氣體，，在該噴淋頭的外緣周圍形成一幕，其中第二反應氣體是無氧的。
  7. 如請求項5之方法，其中該基板位於處理室中的噴淋頭下方，其中流動該第二反應氣體的步驟自該噴淋頭流動該第二反應氣體，該方法進一步包含在該處理室之中從該噴淋頭外部流動含氧的次要吹掃氣體，，在該噴淋頭的外緣周圍形成一幕，其中第二反應氣體包含一惰性氣體與氧。
  8. 如請求項5之方法，其中，與該基板的外緣相比，較多的含矽前驅物沉積在該基板的中心附近。
  9. 如請求項1之方法，其中該摻雜劑層包含硼、磷、及砷其中至少一者的摻雜劑。
  10. 如請求項1之方法，其中該基板以Si、SiC、GaAs、或GaN至少其中之一所構成。
  11. 如請求項1之方法，其中該氧化矽擴散障礙層的厚度有一非均勻厚度以控制該基板的摻雜濃度的均勻性。
  12. 如請求項1之方法，其中該基板被支撐在一基板支撐件上方，其中形成該氧化矽擴散障礙層的步驟包含非均勻地加熱該基板支撐件以產生該基板支撐件的較高溫區域，俾以非均勻地加熱該基板以產生該基板的較高溫區域，其中該氧化矽擴散障礙層在該基板的較高溫區域上方被形成為較厚的。
  13. 如請求項1之方法，其中該基板被支撐在一基板支撐件上方，其中形成該氧化矽擴散障礙層的步驟包含非均勻地加熱該基板支撐件以產生該基板支撐件的較高溫區域，俾以非均勻地加熱該基板以產生該基板的較高溫區域，其中該氧化矽擴散障礙層在該基板上被形成為均勻的。
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