TW202101008A - Apparatus of testing a semiconductor device and method of testing a semiconductor device - Google Patents

Apparatus of testing a semiconductor device and method of testing a semiconductor device Download PDF

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TW202101008A
TW202101008A TW109121246A TW109121246A TW202101008A TW 202101008 A TW202101008 A TW 202101008A TW 109121246 A TW109121246 A TW 109121246A TW 109121246 A TW109121246 A TW 109121246A TW 202101008 A TW202101008 A TW 202101008A
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chuck
probe card
wafer
semiconductor device
card
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TW109121246A
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Chinese (zh)
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TWI805930B (en
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金勇九
崔時龍
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南韓商細美事有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • G01R1/0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0425Test clips, e.g. for IC's
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07314Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/14Braking arrangements; Damping arrangements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/18Screening arrangements against electric or magnetic fields, e.g. against earth's field
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2865Holding devices, e.g. chucks; Handlers or transport devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00Magnets
    • H01F7/06Electromagnets; Actuators including electromagnets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

Disclosed is an apparatus for testing semiconductor devices, which includes a test chamber; a card holder arranged at the upper part of the test chamber and configured to hold a probe card, wherein the probe card transmits electrical signals to a semiconductor device formed on the wafer; a chuck located in the test chamber, wherein the chuck is set to support the wafer in the test chamber and faces the chuck; a chuck driving unit configured to drive the chuck to allow the semiconductor device to be in contact with the probe card; and a magnetic force generating unit configured to generate electromagnetic force between the card holder and the chuck to increase the load applied between the probe card and the wafer. Therefore, the probe card and the wafer can be firmly connected to each other.

Description

測試半導體裝置之設備及測試半導體裝置之方法Equipment for testing semiconductor device and method for testing semiconductor device

本公開是關於一種測試半導體裝置之設備及測試半導體裝置之方法。更特別地,本公開是 關於一種藉由使用探針卡將電信號施加到半導體裝置來測試半導體裝置的設備和測試半導體裝置的方法。The present disclosure relates to a device for testing semiconductor devices and a method for testing semiconductor devices. More particularly, the present disclosure relates to an apparatus for testing a semiconductor device and a method of testing the semiconductor device by applying an electrical signal to the semiconductor device using a probe card.

一般而言,諸如積體電路裝置的半導體裝置可藉由對半導體晶圓重複執行一系列半導體製造程序來製造。例如,可藉由對晶圓重複執行以下程序來製造半導體裝置:用於在晶圓上形成薄膜的沉積程序,用於將薄膜轉化成具有電特性的圖案的蝕刻程序,用於將雜質注入或擴散到圖案中的離子注入程序或擴散程序,用於從具有圖案的晶圓中去除殘留物的清洗程序和漂洗程序。Generally speaking, semiconductor devices such as integrated circuit devices can be manufactured by repeatedly performing a series of semiconductor manufacturing processes on a semiconductor wafer. For example, a semiconductor device can be manufactured by repeating the following procedures on a wafer: a deposition process for forming a thin film on a wafer, an etching process for converting a thin film into a pattern with electrical characteristics, and an etching process for implanting impurities or The ion implantation process or diffusion process that diffuses into the pattern is a cleaning process and a rinsing process used to remove residue from a patterned wafer.

在藉由一系列半導體製造程序來製造半導體裝置後,可執行用於測試半導體裝置的電特性的測試程序。探針台可藉由使用探針卡和測試器兩者來執行測試程序,其中具有多個針的探針卡將裝入到探針台中,且測試器連接到探針卡以向半導體裝置提供電信號。After the semiconductor device is manufactured through a series of semiconductor manufacturing procedures, a test procedure for testing the electrical characteristics of the semiconductor device can be performed. The probe station can execute the test procedure by using both a probe card and a tester, where a probe card with multiple pins will be loaded into the probe station, and the tester is connected to the probe card to provide semiconductor devices electric signal.

對於測試程序而言,探針卡可設置在測試室的頂部部分,且晶圓可設置在卡盤上並在探針卡下方與探針卡相對。卡盤驅動單元可驅動配置成支承晶圓的卡盤使晶圓對準探針卡。如此,形成於晶圓上的半導體裝置與形成於探針卡上的針相互連接,使得測試器能夠藉由探針卡向半導體裝置提供電信號以檢查半導體裝置的電性能。For the test procedure, the probe card can be set in the top part of the test chamber, and the wafer can be set on the chuck and opposite to the probe card under the probe card. The chuck driving unit may drive a chuck configured to support the wafer to align the wafer with the probe card. In this way, the semiconductor device formed on the wafer and the needle formed on the probe card are connected to each other, so that the tester can provide electrical signals to the semiconductor device through the probe card to check the electrical performance of the semiconductor device.

另一方面,隨著形成於探針卡上的針的數量增加,可能需要增加卡盤驅動單元的剛性和容量。近來,有增加包含在卡盤驅動單元中的馬達、LM導件、滾珠螺桿等的尺寸的趨勢。On the other hand, as the number of pins formed on the probe card increases, it may be necessary to increase the rigidity and capacity of the chuck drive unit. Recently, there is a trend to increase the size of motors, LM guides, ball screws, etc. included in the chuck drive unit.

特別地,隨著需要施加到針上的總負載增加到1000kg或更多,卡盤驅動單元的尺寸增加,從而增加了整個探針台的尺寸。In particular, as the total load that needs to be applied to the needle increases to 1000 kg or more, the size of the chuck drive unit increases, thereby increasing the size of the entire probe station.

本發明的實施例提供了一種用於測試半導體裝置的設備,其能夠應對用於晶圓牢固接觸探針卡所需負載的增加。Embodiments of the present invention provide an apparatus for testing semiconductor devices, which can cope with an increase in load required for a wafer to firmly contact a probe card.

本發明的實施例提供了一種用於測試半導體裝置的方法,其能夠應對晶圓牢固接觸探針卡所需負載的增加。The embodiment of the present invention provides a method for testing a semiconductor device, which can cope with an increase in load required for a wafer to firmly contact a probe card.

根據本發明的示例性實施例,公開了一種用於測試半導體裝置的設備,該設備包括測試室;設置在測試室的上部並配置為保持探針卡的卡座,該探針卡將電信號傳輸到形成於晶圓上的半導體裝置;位於測試室中的卡盤,卡盤設置為在測試室內支承晶圓並面向卡座;配置為驅動卡盤以使半導體裝置接觸探針卡的卡盤驅動單元;以及配置為在卡座和卡盤之間產生電磁力以增加施加於探針卡和晶圓之間的負載的磁力產生單元。According to an exemplary embodiment of the present invention, an apparatus for testing a semiconductor device is disclosed. The apparatus includes a test chamber; a card holder arranged at the upper part of the test chamber and configured to hold a probe card, and the probe card transmits electrical signals. Transfer to the semiconductor device formed on the wafer; a chuck located in the test chamber, the chuck is set to support the wafer in the test chamber and face the chuck; the chuck configured to drive the chuck so that the semiconductor device contacts the probe card A drive unit; and a magnetic force generating unit configured to generate electromagnetic force between the card holder and the chuck to increase the load applied between the probe card and the wafer.

在一個示例性實施例中,磁力產生單元可包括設置為環繞卡盤外周的電磁體構件,該電磁體構件利用電力產生磁場。In an exemplary embodiment, the magnetic force generating unit may include an electromagnet member disposed to surround the outer circumference of the chuck, and the electromagnet member generates a magnetic field using electric power.

在此,磁力產生單元還可包括磁性構件,其鄰近卡座設置以面向電磁體構件,且磁性構件設置為增加電磁場。Here, the magnetic force generating unit may further include a magnetic member disposed adjacent to the holder to face the electromagnet member, and the magnetic member is disposed to increase the electromagnetic field.

而且,磁力產生單元還可包括電源和電源控制器,電源用於向電磁體構件提供電力,電源控制器用於調節電力的大小。Moreover, the magnetic force generating unit may further include a power source and a power source controller, the power source is used to provide power to the electromagnet member, and the power source controller is used to adjust the size of the power.

在一個示例性實施例中,緩衝構件可進一步設置於磁力產生單元和卡座之間,且緩衝構件配置為緩解發生在探針卡的針和半導體裝置的焊盤之間的衝擊。In an exemplary embodiment, a buffer member may be further provided between the magnetic force generating unit and the card holder, and the buffer member is configured to relieve an impact occurring between the needle of the probe card and the pad of the semiconductor device.

在一個示例性實施例中,緩衝構件可包括阻尼器、彈簧和彈性板中的至少一個。In an exemplary embodiment, the buffer member may include at least one of a damper, a spring, and an elastic plate.

在此,緩衝構件可設置在磁力產生單元上。Here, the buffer member may be provided on the magnetic force generating unit.

在一個示例性實施例中,測試室可包括形成於其上壁上用於容納探針卡的接收槽。In an exemplary embodiment, the test chamber may include a receiving groove formed on an upper wall thereof for receiving the probe card.

在一個示例性實施例中,電磁波遮罩構件可進一步鄰近接收槽設置。In an exemplary embodiment, the electromagnetic wave shield member may be further disposed adjacent to the receiving groove.

在此,電磁波遮罩構件可沿接收槽的內側壁設置。Here, the electromagnetic wave shielding member may be provided along the inner side wall of the receiving groove.

而且,電磁波遮罩構件可包括金屬薄膜。Also, the electromagnetic wave shield member may include a metal thin film.

根據本發明的示例性實施例,公開了一種用於測試半導體裝置的方法,該方法包括:將配置為向形成於晶圓上的半導體裝置傳輸電信號的探針卡安裝在卡座中;將晶圓安裝在設置為面向卡座的卡盤上;驅動卡盤首先使半導體裝置接觸探針卡,並使用電磁力增加施加在探針卡和晶圓之間的負載。According to an exemplary embodiment of the present invention, a method for testing a semiconductor device is disclosed. The method includes: installing a probe card configured to transmit electrical signals to a semiconductor device formed on a wafer in a holder; The wafer is mounted on a chuck set to face the chuck; the drive chuck first makes the semiconductor device contact the probe card and uses electromagnetic force to increase the load applied between the probe card and the wafer.

在一個示例性實施例中,驅動卡盤進一步可包括使半導體裝置對準探針卡。In an exemplary embodiment, driving the chuck may further include aligning the semiconductor device with the probe card.

在一個示例性實施例中,增加探針卡和晶圓之間的負載可包括調整施加到鄰近卡盤設置的電磁體構件的電力值。In an exemplary embodiment, increasing the load between the probe card and the wafer may include adjusting the value of electric power applied to an electromagnet member disposed adjacent to the chuck.

而且,增加探針卡與晶圓之間的負載可進一步包括利用鄰近卡座設置的磁性構件,以面向電磁體構件。Moreover, increasing the load between the probe card and the wafer may further include using a magnetic member disposed adjacent to the card holder to face the electromagnet member.

在一個示例性實施例中,增加探針卡和晶圓之間的負載可包括緩解發生在探針卡的針和半導體裝置的焊盤之間的衝擊。In an exemplary embodiment, increasing the load between the probe card and the wafer may include mitigating the impact that occurs between the pins of the probe card and the pads of the semiconductor device.

在一個示例性實施例中,將探針卡安裝在卡座中可包括將探針卡定位在形成於測試室的上壁上的接收槽中。In an exemplary embodiment, installing the probe card in the holder may include positioning the probe card in a receiving groove formed on the upper wall of the test chamber.

在一個示例性實施例中,可藉由探針卡將電信號從測試器施加到半導體裝置。In an exemplary embodiment, the electrical signal may be applied from the tester to the semiconductor device by a probe card.

在此,將電信號施加到半導體裝置可包括將電磁波與測試器遮罩。Here, applying the electrical signal to the semiconductor device may include shielding the electromagnetic wave with the tester.

根據本發明的示例性實施例,公開了一種用於測試半導體裝置的設備,該設備包括測試室;設置在測試室的上部並配置成保持探針卡的卡座,探針卡將電信號傳輸到形成於晶圓上的半導體裝置;位於測試室中的卡盤,卡盤設置為在測試室內支承晶片並面向卡座;配置為驅動卡盤以使半導體裝置接觸探針卡的卡盤驅動單元;以及配置為在卡座和卡盤之間產生電磁力以增加施加於探針卡和晶圓之間的負載的磁力產生單元,其中,磁力產生單元包括設置為環繞卡盤外周的電磁體構件,該電磁體構件利用電力產生磁場,和鄰近卡座設置以面向電磁體構件的磁性構件,磁性構件設置為增加電磁場。According to an exemplary embodiment of the present invention, an apparatus for testing a semiconductor device is disclosed. The apparatus includes a test chamber; a card holder arranged in the upper part of the test chamber and configured to hold a probe card, and the probe card transmits electrical signals. To the semiconductor device formed on the wafer; the chuck located in the test chamber, the chuck is set to support the wafer in the test chamber and face the chuck; the chuck drive unit configured to drive the chuck so that the semiconductor device contacts the probe card And a magnetic force generating unit configured to generate electromagnetic force between the holder and the chuck to increase the load applied between the probe card and the wafer, wherein the magnetic force generating unit includes an electromagnet member arranged to surround the periphery of the chuck The electromagnet member uses electric power to generate a magnetic field, and is disposed adjacent to the holder to face the magnetic member of the electromagnet member, and the magnetic member is arranged to increase the electromagnetic field.

根據上述本公開的示例性實施例,用於測試半導體裝置的設備包括電磁力產生單元,其用於產生施加於卡座和卡盤之間的電磁力。因此,當探針卡和晶圓之間的所需負載隨著形成於探針卡中的針的數量的增加而增加時,電磁力產生單元可增加負載以應對所需的負載。此外,電磁力產生單元可藉由部分分擔豎直驅動模組的載量而部分縮小豎直驅動模組。According to the exemplary embodiment of the present disclosure described above, the apparatus for testing a semiconductor device includes an electromagnetic force generating unit for generating an electromagnetic force applied between the chuck and the chuck. Therefore, when the required load between the probe card and the wafer increases as the number of pins formed in the probe card increases, the electromagnetic force generating unit can increase the load to cope with the required load. In addition, the electromagnetic force generation unit can partially reduce the vertical drive module by partially sharing the load of the vertical drive module.

本公開的上述概述並不旨在描述本公開的每個圖示實施例或每個實施方式。更特別地,以下詳細描述和申請專利範圍舉例說明了這些實施例。The above summary of the present disclosure is not intended to describe each illustrated embodiment or every implementation of the present disclosure. More specifically, the following detailed description and patent application exemplify these embodiments.

雖然各種實施例可做出各種修改和替代形式,但其具體細節已在圖中以示例方式示出,並將詳細描述。然而,應理解,本發明並不是將所主張的發明限於所描述的特定實施例。相反,本發明涵蓋了落在本發明主題如申請專利範圍限定的實質和範圍內的所有修改、等同物和替代物。Although various modifications and alternative forms can be made to the various embodiments, the specific details thereof have been shown by way of example in the drawings and will be described in detail. However, it should be understood that the present invention does not limit the claimed invention to the specific embodiments described. On the contrary, the present invention covers all modifications, equivalents and alternatives falling within the spirit and scope of the subject matter of the present invention as defined by the scope of the patent application.

以下,參照圖式詳細描述關於滾道單元和具有該滾道單元的OHT的具體實施例。然而,本發明可以不同形式體現,並且不應解釋為限於本文所述的實施例。相反,提供這些實施例使得本公開是徹底和完整的,並將本發明的範圍充分傳達給本領域的技術人員。相同的圖式符號說明在全文中指代相同的元件。在圖中,為了說明的清楚,誇大了層和區域的尺寸。Hereinafter, specific embodiments of the raceway unit and the OHT with the raceway unit will be described in detail with reference to the drawings. However, the present invention may be embodied in different forms and should not be construed as being limited to the embodiments described herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. The same drawing symbols refer to the same elements throughout the text. In the figure, for clarity of description, the sizes of layers and regions are exaggerated.

諸如第一、第二等的術語可用於描述各種元件,但由上述術語描述的上述元件不應受到限制。上述術語僅用於區分一個元件與另一個元件。例如,在本發明中,在不脫離範圍的情況下,第一元件可類似地命名為第二元件,第二元件也可類似地命名為第一元件。Terms such as first, second, etc. can be used to describe various elements, but the above elements described by the above terms should not be limited. The above terms are only used to distinguish one element from another. For example, in the present invention, without departing from the scope, the first element may be similarly named as the second element, and the second element may also be similarly named as the first element.

本文使用的術語僅用於描述特定示例性實施例的目的,並不旨在限制本發明的構思。如本文所使用的,單數形式「一」和「該」也旨在包括複數形式,除非上下文清楚地另外表明。還應理解,當在本說明書中使用術語「包括」時,表明所述特徵、整數、步驟、操作、元件及/或元件的存在,但並不排除一個或多個其他特徵、整數、步驟、操作、元件、元件及/或其組合的存在或附加。The terminology used herein is only for the purpose of describing specific exemplary embodiments and is not intended to limit the concept of the present invention. As used herein, the singular forms "a" and "the" are also intended to include the plural form, unless the context clearly indicates otherwise. It should also be understood that when the term "comprises" is used in this specification, it indicates the existence of the features, integers, steps, operations, elements, and/or elements, but does not exclude one or more other features, integers, steps, The presence or addition of operations, elements, elements and/or combinations thereof.

除非另有定義,否則本文中使用的所有術語(包括技術和科學術語)具有與本發明構思所屬領域的普通技術人員通常理解相同的含義。還應理解,諸如常用詞典中定義的那些術語應解釋為具有與其在相關領域上下文中相一致的含義,且不應以理想化或過度形式化的方式解釋,除非本文中明確定義。Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the inventive concept belongs. It should also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their context in the relevant field, and should not be interpreted in an idealized or over-formalized manner unless explicitly defined herein.

圖1是根據本發明一實施例之用於測試半導體裝置的設備的截面圖。圖2是圖1中卡盤和卡盤驅動單元的截面圖。圖3是圖1中卡座的截面圖。FIG. 1 is a cross-sectional view of an apparatus for testing a semiconductor device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view of the chuck and the chuck drive unit in Fig. 1. Fig. 3 is a cross-sectional view of the card holder in Fig. 1.

參照圖1至圖3,根據本發明一實施例之用於測試半導體裝置的設備100可使用探針卡20對形成於晶圓10上的半導體裝置進行電特性檢查。1 to 3, the apparatus 100 for testing a semiconductor device according to an embodiment of the present invention can use the probe card 20 to perform electrical characteristics inspection on the semiconductor device formed on the wafer 10.

該設備100包括測試室105、卡盤130、卡盤驅動單元120、卡座110和電磁力產生單元150。The device 100 includes a test chamber 105, a chuck 130, a chuck drive unit 120, a chuck 110, and an electromagnetic force generating unit 150.

測試室105可提供用於對形成於晶圓10上的半導體裝置執行電性能檢查的處理空間。The test chamber 105 may provide a processing space for performing electrical performance inspection on the semiconductor device formed on the wafer 10.

卡盤130設置於處理空間中。卡盤130可支承晶圓10。卡盤130可藉由使用靜電力或真空力將晶圓10固定在其上表面。The chuck 130 is disposed in the processing space. The chuck 130 can support the wafer 10. The chuck 130 can fix the wafer 10 on its upper surface by using electrostatic force or vacuum force.

卡盤驅動單元120設置在卡盤130下方。卡盤驅動單元120驅動卡盤130以移動晶圓10從而使半導體裝置接觸探針卡20,使得半導體的焊盤與探針卡20的針接觸。The chuck drive unit 120 is provided under the chuck 130. The chuck driving unit 120 drives the chuck 130 to move the wafer 10 so that the semiconductor device contacts the probe card 20 so that the pad of the semiconductor contacts the needle of the probe card 20.

更具體地,卡盤驅動單元120包括旋轉模組121、豎直驅動模組123、第一水平驅動模組124和第二水平驅動模組125。More specifically, the chuck drive unit 120 includes a rotation module 121, a vertical drive module 123, a first horizontal drive module 124 and a second horizontal drive module 125.

旋轉模組121使得卡盤130旋轉。因此,晶圓10旋轉以與探針卡20沿R方向對準。The rotating module 121 rotates the chuck 130. Therefore, the wafer 10 is rotated to be aligned with the probe card 20 in the R direction.

豎直驅動模組123調整卡盤130的豎直位置。因此,定位在卡盤130上的晶圓10可與探針卡20接觸,或者可與探針卡20隔開。The vertical driving module 123 adjusts the vertical position of the chuck 130. Therefore, the wafer 10 positioned on the chuck 130 may be in contact with the probe card 20 or may be separated from the probe card 20.

同時,第一和第二水平驅動模組124和125可使卡盤130沿第一水平方向和垂直於第一水平方向的第二水平方向移動。因此,第一和第二水平驅動模組124和125調整卡盤130的水平位置。At the same time, the first and second horizontal driving modules 124 and 125 can move the chuck 130 in a first horizontal direction and a second horizontal direction perpendicular to the first horizontal direction. Therefore, the first and second horizontal driving modules 124 and 125 adjust the horizontal position of the chuck 130.

卡座110設置在測試室105的上部。卡座110可配置為保持探針卡20。卡座110可藉由夾持方式或卡合方式保持探針卡20。The card holder 110 is arranged at the upper part of the test chamber 105. The holder 110 may be configured to hold the probe card 20. The holder 110 can hold the probe card 20 in a clamping manner or a clamping manner.

電磁力產生單元150在卡座110和卡盤130之間產生電磁力。因此,可增加施加於保持在卡座110上的探針卡20與支承在卡盤130上的晶圓10之間的負載。The electromagnetic force generating unit 150 generates electromagnetic force between the chuck 110 and the chuck 130. Therefore, the load applied between the probe card 20 held on the holder 110 and the wafer 10 supported on the chuck 130 can be increased.

因此,當探針卡20和晶圓10之間所需的負載隨著形成於探針卡20上的針22的數量增加而增加時,電磁力產生單元150可應對所需負載的增加。Therefore, when the load required between the probe card 20 and the wafer 10 increases as the number of pins 22 formed on the probe card 20 increases, the electromagnetic force generating unit 150 can cope with the increase in the required load.

另一方面,電磁力產生單元150可與豎直驅動模組123分擔增加的所需負載,以使豎直驅動模組123的尺寸小型化。On the other hand, the electromagnetic force generating unit 150 can share the increased required load with the vertical driving module 123, so that the size of the vertical driving module 123 can be miniaturized.

在本發明的一個實施例中,磁力產生單元150設置為環繞卡盤130的外周。磁力產生單元150可包括能夠利用電力產生磁場的電磁體構件151。In an embodiment of the present invention, the magnetic force generating unit 150 is arranged to surround the outer circumference of the chuck 130. The magnetic force generating unit 150 may include an electromagnet member 151 capable of generating a magnetic field using electric power.

電磁體構件151包括磁體(未示出)和圍繞磁體的線圈(未示出),電流流過該線圈。在這種情況下,電磁體構件151可藉由調整流過線圈的電流大小來控制電磁力的大小。相應地,可調整晶圓10和探針卡20之間牢固接觸所需的過驅動值。在此,過驅動值(over-driving value)可對應於藉由將支承晶圓10的卡盤130提升至比參考位置高的豎直位置的接觸力,所以探針卡20和晶圓10可更牢固地連接,以使至半導體裝置的電連接牢固。The electromagnet member 151 includes a magnet (not shown) and a coil (not shown) surrounding the magnet, and current flows through the coil. In this case, the electromagnet member 151 can control the magnitude of the electromagnetic force by adjusting the magnitude of the current flowing through the coil. Accordingly, the overdrive value required for firm contact between the wafer 10 and the probe card 20 can be adjusted. Here, the over-driving value can correspond to the contact force by lifting the chuck 130 supporting the wafer 10 to a vertical position higher than the reference position, so the probe card 20 and the wafer 10 can be The connection is firmer to make the electrical connection to the semiconductor device firm.

因此,可容易地控制各種類型半導體裝置所需的各種過驅動值。Therefore, various overdrive values required for various types of semiconductor devices can be easily controlled.

此外,藉由對電流的導通/斷開控制,可容易地開啟或關閉晶圓10和探針卡20之間的電磁力。In addition, by controlling the on/off of the current, the electromagnetic force between the wafer 10 and the probe card 20 can be easily turned on or off.

另一方面,電磁體構件151設置於卡盤130的外周上,其與測試器30隔開相對較長。因此,可抑制電磁體構件151產生的電磁波干擾測試器30的測試步驟。On the other hand, the electromagnet member 151 is provided on the outer circumference of the chuck 130, which is relatively long apart from the tester 30. Therefore, the electromagnetic wave generated by the electromagnet member 151 can be suppressed from interfering with the test procedure of the tester 30.

在本發明的一個實施例中,磁力產生單元150還可包括磁性構件155。磁性構件155臨近卡座110設置,以面向電磁體構件151。設置磁性構件155以進一步增加電磁場。因此,電磁體構件151和磁性構件155可提高電磁力。In an embodiment of the present invention, the magnetic force generating unit 150 may further include a magnetic member 155. The magnetic member 155 is disposed adjacent to the holder 110 to face the electromagnet member 151. The magnetic member 155 is provided to further increase the electromagnetic field. Therefore, the electromagnet member 151 and the magnetic member 155 can increase the electromagnetic force.

在本發明的一個示例性實施例中,磁力產生單元150還可包括電源153和電源控制器154。電源153向包括在電磁體構件151中的線圈提供電力。電源控制器154調整電源153提供的電力的大小。因此,由於流過電磁體構件151的電流大小被控制,電磁體構件151產生的電磁力的大小可被調整。In an exemplary embodiment of the present invention, the magnetic force generating unit 150 may further include a power source 153 and a power source controller 154. The power supply 153 supplies power to the coil included in the electromagnet member 151. The power supply controller 154 adjusts the amount of power provided by the power supply 153. Therefore, since the magnitude of the current flowing through the electromagnet member 151 is controlled, the magnitude of the electromagnetic force generated by the electromagnet member 151 can be adjusted.

在本發明的一個實施例中,設備100還可包括緩衝構件170。In an embodiment of the present invention, the device 100 may further include a buffer member 170.

緩衝構件170設置於磁力產生單元150和卡座110之間。例如,緩衝構件170可插在電磁體構件151和磁性構件155之間。因此,當探針卡20和晶圓10藉由電磁力在高負載下接觸時,可減輕對包含在探針卡20中的針22的衝擊,以防止探針卡20損壞。The buffer member 170 is disposed between the magnetic force generating unit 150 and the holder 110. For example, the buffer member 170 may be inserted between the electromagnet member 151 and the magnetic member 155. Therefore, when the probe card 20 and the wafer 10 are in contact with each other under a high load by electromagnetic force, the impact to the needle 22 included in the probe card 20 can be reduced to prevent the probe card 20 from being damaged.

緩衝構件170可包括阻尼器、彈簧、和彈性板等中的至少一個。或者,當探針卡20和晶圓10接觸時,緩衝構件170可包括減輕對包含在探針卡20中的針22的衝擊的其他構件。The buffer member 170 may include at least one of a damper, a spring, an elastic plate, and the like. Alternatively, when the probe card 20 and the wafer 10 are in contact, the buffer member 170 may include other members that reduce the impact on the needle 22 included in the probe card 20.

在本發明的一個示例性實施例中,測試室105的上壁設有用於容納探針卡20的接收槽105a。鄰近接收槽105a可額外設置電磁波遮罩構件180。In an exemplary embodiment of the present invention, the upper wall of the test chamber 105 is provided with a receiving groove 105 a for receiving the probe card 20. An electromagnetic wave shield member 180 may be additionally provided adjacent to the receiving slot 105a.

在此,電磁波遮罩構件180可沿接收槽105a的內壁設置。即,電磁波遮罩構件180可抑制驅動磁力產生單元150時產生的電磁波傳播通過接收槽105a到測試器30中。因此,在對半導體裝置執行檢測過程時,電磁波遮罩構件180可藉由阻擋磁力產生單元150產生的電磁波來防止測試器30在檢測過程發生錯誤。Here, the electromagnetic wave shield member 180 may be provided along the inner wall of the receiving groove 105a. That is, the electromagnetic wave shield member 180 can suppress the electromagnetic wave generated when the magnetic force generating unit 150 is driven from propagating through the receiving groove 105 a into the tester 30. Therefore, when performing the inspection process on the semiconductor device, the electromagnetic wave shield member 180 can prevent the tester 30 from making an error during the inspection process by blocking the electromagnetic wave generated by the magnetic force generating unit 150.

在此,電磁波遮罩構件180可包括金屬薄膜。電磁波遮罩構件180可藉由濺射程序和噴塗程序形成。Here, the electromagnetic wave shield member 180 may include a metal thin film. The electromagnetic wave shield member 180 may be formed by a sputtering process and a spraying process.

圖4是根據本發明的一個示例性實施例之用於測試半導體裝置的方法的流程圖。FIG. 4 is a flowchart of a method for testing a semiconductor device according to an exemplary embodiment of the present invention.

參照圖1和圖4,公開了根據本發明的一個示例性實施例用於測試半導體裝置的方法。將用於向形成於晶圓上的半導體裝置傳送電信號的探針卡20安裝在卡座110上(步驟S110)。同時,將晶圓安裝在面向卡座的卡盤130上(步驟S130)。1 and 4, a method for testing a semiconductor device according to an exemplary embodiment of the present invention is disclosed. The probe card 20 for transmitting electrical signals to the semiconductor device formed on the wafer is mounted on the holder 110 (step S110). At the same time, the wafer is mounted on the chuck 130 facing the chuck (step S130).

在將晶圓10對準探針卡20後,驅動卡盤130使半導體裝置10與探針卡20接觸(步驟S150)。After the wafer 10 is aligned with the probe card 20, the chuck 130 is driven to bring the semiconductor device 10 into contact with the probe card 20 (step S150).

藉由使用電磁力來增加探針卡20和半導體裝置之間的負載(步驟S170)。因此,形成於探針卡20上的針22可更可靠地連接到半導體裝置的焊盤上。The load between the probe card 20 and the semiconductor device is increased by using electromagnetic force (step S170). Therefore, the pins 22 formed on the probe card 20 can be more reliably connected to the pads of the semiconductor device.

在此,在藉由電磁力增加探針卡20和晶圓10之間的負載的同時,可調整施加到鄰近卡盤130設置的電磁體構件151的電力值。因此,由於流過電磁體構件151的電流大小被控制,可調整電磁體構件151產生的電磁力的大小。Here, while the load between the probe card 20 and the wafer 10 is increased by the electromagnetic force, the value of the electric power applied to the electromagnet member 151 provided adjacent to the chuck 130 can be adjusted. Therefore, since the magnitude of the current flowing through the electromagnet member 151 is controlled, the magnitude of the electromagnetic force generated by the electromagnet member 151 can be adjusted.

之後,藉由探針卡20向形成於晶圓10上的半導體裝置施加測試信號。在此,測試半導體裝置的設備100可連接到測試器30,以檢查半導體裝置10的電性能。測試器30藉由探針卡20將測試信號施加到形成於晶圓10上的半導體裝置,以使用半導體裝置輸出的信號來檢查晶圓10的電性能。After that, the probe card 20 applies a test signal to the semiconductor device formed on the wafer 10. Here, the equipment 100 for testing the semiconductor device may be connected to the tester 30 to check the electrical performance of the semiconductor device 10. The tester 30 applies a test signal to the semiconductor device formed on the wafer 10 through the probe card 20 to use the signal output from the semiconductor device to check the electrical performance of the wafer 10.

儘管已參考具體實施例描述了無線電力傳輸設備和無線電力傳輸方法,但它們並不限於此。因此,本領域技術人員應容易地理解,在不脫離本發明之由所附申請專利範圍限定的實質和範圍的情況下,可對其進行各種修改和改變。Although the wireless power transmission device and the wireless power transmission method have been described with reference to specific embodiments, they are not limited thereto. Therefore, those skilled in the art should easily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention defined by the scope of the appended patent application.

10:晶圓 20:探針卡 22:針 30:測試器 100:用於測試半導體裝置的設備 105:測試室 105a:接收槽 110:卡座 120:卡盤驅動單元 121:旋轉模組 123:豎直驅動模組 124:第一水平驅動模組 125:第二水平驅動模組 130:卡盤 150:磁力產生單元 151:電磁體構件 153:電源 154:電源控制器 155:磁性構件 170:緩衝構件 180:電磁波遮罩構件 S110、S130、S150、S170:步驟10: Wafer 20: Probe card 22: Needle 30: Tester 100: Equipment for testing semiconductor devices 105: test room 105a: receiving slot 110: deck 120: chuck drive unit 121: Rotation module 123: Vertical drive module 124: The first horizontal drive module 125: second horizontal drive module 130: Chuck 150: Magnetic force generating unit 151: Electromagnet component 153: Power 154: Power Controller 155: Magnetic component 170: Cushion member 180: Electromagnetic wave shield component S110, S130, S150, S170: steps

結合圖式,根據以下描述可更詳細地理解示例性實施例。其中:With reference to the drawings, the exemplary embodiments can be understood in more detail based on the following description. among them:

圖1是根據本發明一實施例之用於測試半導體裝置的設備的截面圖;1 is a cross-sectional view of an apparatus for testing semiconductor devices according to an embodiment of the present invention;

圖2是圖1中卡盤和卡盤驅動單元的截面圖;Figure 2 is a cross-sectional view of the chuck and the chuck drive unit in Figure 1;

圖3是圖1中卡座的截面圖;以及Figure 3 is a cross-sectional view of the card holder in Figure 1; and

圖4是根據本發明一示例性實施例之用於測試半導體裝置的方法的流程圖。FIG. 4 is a flowchart of a method for testing a semiconductor device according to an exemplary embodiment of the present invention.

10:晶圓 10: Wafer

20:探針卡 20: Probe card

22:針 22: Needle

30:測試器 30: Tester

100:用於測試半導體裝置的設備 100: Equipment for testing semiconductor devices

105:測試室 105: test room

110:卡座 110: deck

120:卡盤驅動單元 120: chuck drive unit

121:旋轉模組 121: Rotation module

123:豎直驅動模組 123: Vertical drive module

124:第一水平驅動模組 124: The first horizontal drive module

125:第二水平驅動模組 125: second horizontal drive module

130:卡盤 130: Chuck

150:磁力產生單元 150: Magnetic force generating unit

151:電磁體構件 151: Electromagnet component

155:磁性構件 155: Magnetic component

Claims (20)

一種用於測試半導體裝置的設備,其特徵在於,該設備包括: 測試室; 設置在該測試室的上部的卡座,該卡座配置為保持探針卡,該探針卡將電信號傳輸到形成於晶圓上的半導體裝置; 位於該測試室中的卡盤,該卡盤設置為在該測試室內支承該晶圓並面向該卡座; 配置為驅動該卡盤以使該半導體裝置接觸該探針卡的卡盤驅動單元;以及 配置為在該卡座和該卡盤之間產生電磁力以增加施加於該探針卡和該晶圓之間的負載的磁力產生單元。A device for testing semiconductor devices, characterized in that the device includes: Test room A card holder provided at the upper part of the test chamber, the card holder being configured to hold a probe card, and the probe card transmits electrical signals to a semiconductor device formed on a wafer; A chuck located in the test chamber, the chuck is arranged to support the wafer in the test chamber and face the chuck; A chuck drive unit configured to drive the chuck so that the semiconductor device contacts the probe card; and A magnetic force generating unit configured to generate electromagnetic force between the card holder and the chuck to increase the load applied between the probe card and the wafer. 如請求項1記載的設備,其中該磁力產生單元包括設置為環繞該卡盤的外周的電磁體構件,該電磁體構件利用電力產生磁場。The device according to claim 1, wherein the magnetic force generating unit includes an electromagnet member arranged to surround the outer circumference of the chuck, and the electromagnet member generates a magnetic field by using electric power. 如請求項2記載的設備,其中該磁力產生單元還包括鄰近該卡座設置以面向該電磁體構件的磁性構件,且該磁性構件設置為增加該電磁場。The device according to claim 2, wherein the magnetic force generating unit further includes a magnetic member disposed adjacent to the holder to face the electromagnet member, and the magnetic member is configured to increase the electromagnetic field. 如請求項2記載的設備,其中該磁力產生單元還包括用於向該電磁體構件提供電力的電源,和用於調節該電力的大小的電源控制器。The device according to claim 2, wherein the magnetic force generating unit further includes a power source for supplying power to the electromagnet member, and a power source controller for adjusting the magnitude of the power. 如請求項1記載的設備,還包括設置於該磁力產生單元和該卡座之間的緩衝構件,且該緩衝構件配置為緩解在該探針卡的針和該半導體裝置的焊盤之間發生的衝擊。The device as recited in claim 1, further comprising a buffer member provided between the magnetic force generating unit and the card holder, and the buffer member is configured to relieve the occurrence between the needle of the probe card and the pad of the semiconductor device. The impact. 如請求項1記載的設備,其中該緩衝構件包括阻尼器、彈簧和彈性板中的至少一個。The device according to claim 1, wherein the buffer member includes at least one of a damper, a spring, and an elastic plate. 如請求項5記載的設備,其中該緩衝構件設置於該磁力產生單元上。The device according to claim 5, wherein the buffer member is disposed on the magnetic force generating unit. 如請求項1記載的設備,其中該測試室包括形成於其上壁上用於容納該探針卡的接收槽。The device according to claim 1, wherein the test chamber includes a receiving slot formed on the upper wall of the test chamber for accommodating the probe card. 如請求項1記載的設備,還包括鄰近該接收槽設置的電磁波遮罩構件。The device as recited in claim 1, further comprising an electromagnetic wave shield member arranged adjacent to the receiving slot. 如請求項9記載的設備,其中該電磁波遮罩構件沿該接收槽的內側壁設置。The device according to claim 9, wherein the electromagnetic wave shielding member is arranged along the inner side wall of the receiving groove. 如請求項9記載的設備,其中該電磁波遮罩構件包括金屬薄膜。The device according to claim 9, wherein the electromagnetic wave shielding member includes a metal thin film. 一種用於測試半導體裝置的方法,該方法包括: 將配置為向形成於晶圓上的半導體裝置傳輸電信號的探針卡安裝在卡座中; 將晶圓安裝在設置為面向該卡座的卡盤上; 驅動該卡盤首先使該半導體裝置接觸該探針卡;以及 使用電磁力增加施加於該探針卡和該晶圓之間的負載。A method for testing a semiconductor device, the method comprising: Mounting a probe card configured to transmit electrical signals to the semiconductor device formed on the wafer in the holder; Mount the wafer on the chuck set to face the card seat; Driving the chuck to first make the semiconductor device contact the probe card; and The electromagnetic force is used to increase the load applied between the probe card and the wafer. 如請求項12記載的方法,其中驅動該卡盤還包括使該半導體裝置對準該探針卡。The method according to claim 12, wherein driving the chuck further includes aligning the semiconductor device with the probe card. 如請求項12記載的方法,其中增加該探針卡和該晶圓之間的負載包括調整施加於鄰近該卡盤設置的電磁體構件的電力值。The method of claim 12, wherein increasing the load between the probe card and the wafer includes adjusting the value of electric power applied to an electromagnet member disposed adjacent to the chuck. 如請求項14記載的方法,其中增加該探針卡與該晶圓之間的負載還包括利用鄰近該卡座設置以面向該電磁體構件的磁性構件。The method according to claim 14, wherein increasing the load between the probe card and the wafer further includes using a magnetic member disposed adjacent to the card socket to face the electromagnet member. 如請求項12記載的方法,其中增加該探針卡和該晶圓之間的負載包括緩解在該探針卡的針和該半導體裝置的焊盤之間發生的衝擊。The method according to claim 12, wherein increasing the load between the probe card and the wafer includes alleviating an impact occurring between the needle of the probe card and the pad of the semiconductor device. 如請求項12記載的方法,其中將該探針卡安裝在該卡座中包括將該探針卡定位在形成於測試室的上壁上的接收槽中。The method according to claim 12, wherein installing the probe card in the holder includes positioning the probe card in a receiving groove formed on an upper wall of the test chamber. 如請求項12記載的方法,還包括藉由該探針卡將電信號從測試器施加到該半導體裝置。The method according to claim 12, further comprising applying an electrical signal from the tester to the semiconductor device through the probe card. 如請求項18記載的方法,其中將該電信號施加至該半導體裝置包括將電磁波與該測試器遮罩。The method according to claim 18, wherein applying the electrical signal to the semiconductor device includes shielding an electromagnetic wave with the tester. 一種用於測試半導體裝置的設備,該設備包括: 測試室; 設置在該測試室的上部的卡座,該卡座配置成保持探針卡,該探針卡將電信號傳輸到形成於晶圓上的半導體裝置; 位於該測試室中的卡盤,該卡盤設置為在該測試室內支承該晶圓並面向該卡座; 配置為驅動該卡盤以使該半導體裝置接觸該探針卡的卡盤驅動單元;以及 配置為在該卡座和該卡盤之間產生電磁力以增加施加於該探針卡和該晶圓之間的負載的磁力產生單元, 其中,該磁力產生單元包括設置為環繞該卡盤的外周的電磁體構件,該電磁體構件利用電力產生磁場,和鄰近該卡座設置以面向該電磁體構件的磁性構件,該磁性構件設置為增加該電磁場。A device for testing semiconductor devices, the device comprising: Test room A card holder provided at the upper part of the test chamber, the card holder being configured to hold a probe card, the probe card transmitting electrical signals to a semiconductor device formed on a wafer; A chuck located in the test chamber, the chuck is arranged to support the wafer in the test chamber and face the chuck; A chuck drive unit configured to drive the chuck so that the semiconductor device contacts the probe card; and A magnetic force generating unit configured to generate electromagnetic force between the card holder and the chuck to increase the load applied between the probe card and the wafer, Wherein, the magnetic force generating unit includes an electromagnet member arranged to surround the outer circumference of the chuck, the electromagnet member generates a magnetic field using electric power, and a magnetic member disposed adjacent to the holder to face the electromagnet member, and the magnetic member is arranged as Increase the electromagnetic field.
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