TW202101008A - Apparatus of testing a semiconductor device and method of testing a semiconductor device - Google Patents
Apparatus of testing a semiconductor device and method of testing a semiconductor device Download PDFInfo
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- TW202101008A TW202101008A TW109121246A TW109121246A TW202101008A TW 202101008 A TW202101008 A TW 202101008A TW 109121246 A TW109121246 A TW 109121246A TW 109121246 A TW109121246 A TW 109121246A TW 202101008 A TW202101008 A TW 202101008A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0425—Test clips, e.g. for IC's
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/14—Braking arrangements; Damping arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/18—Screening arrangements against electric or magnetic fields, e.g. against earth's field
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2865—Holding devices, e.g. chucks; Handlers or transport devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
Description
本公開是關於一種測試半導體裝置之設備及測試半導體裝置之方法。更特別地,本公開是 關於一種藉由使用探針卡將電信號施加到半導體裝置來測試半導體裝置的設備和測試半導體裝置的方法。The present disclosure relates to a device for testing semiconductor devices and a method for testing semiconductor devices. More particularly, the present disclosure relates to an apparatus for testing a semiconductor device and a method of testing the semiconductor device by applying an electrical signal to the semiconductor device using a probe card.
一般而言,諸如積體電路裝置的半導體裝置可藉由對半導體晶圓重複執行一系列半導體製造程序來製造。例如,可藉由對晶圓重複執行以下程序來製造半導體裝置:用於在晶圓上形成薄膜的沉積程序,用於將薄膜轉化成具有電特性的圖案的蝕刻程序,用於將雜質注入或擴散到圖案中的離子注入程序或擴散程序,用於從具有圖案的晶圓中去除殘留物的清洗程序和漂洗程序。Generally speaking, semiconductor devices such as integrated circuit devices can be manufactured by repeatedly performing a series of semiconductor manufacturing processes on a semiconductor wafer. For example, a semiconductor device can be manufactured by repeating the following procedures on a wafer: a deposition process for forming a thin film on a wafer, an etching process for converting a thin film into a pattern with electrical characteristics, and an etching process for implanting impurities or The ion implantation process or diffusion process that diffuses into the pattern is a cleaning process and a rinsing process used to remove residue from a patterned wafer.
在藉由一系列半導體製造程序來製造半導體裝置後,可執行用於測試半導體裝置的電特性的測試程序。探針台可藉由使用探針卡和測試器兩者來執行測試程序,其中具有多個針的探針卡將裝入到探針台中,且測試器連接到探針卡以向半導體裝置提供電信號。After the semiconductor device is manufactured through a series of semiconductor manufacturing procedures, a test procedure for testing the electrical characteristics of the semiconductor device can be performed. The probe station can execute the test procedure by using both a probe card and a tester, where a probe card with multiple pins will be loaded into the probe station, and the tester is connected to the probe card to provide semiconductor devices electric signal.
對於測試程序而言,探針卡可設置在測試室的頂部部分,且晶圓可設置在卡盤上並在探針卡下方與探針卡相對。卡盤驅動單元可驅動配置成支承晶圓的卡盤使晶圓對準探針卡。如此,形成於晶圓上的半導體裝置與形成於探針卡上的針相互連接,使得測試器能夠藉由探針卡向半導體裝置提供電信號以檢查半導體裝置的電性能。For the test procedure, the probe card can be set in the top part of the test chamber, and the wafer can be set on the chuck and opposite to the probe card under the probe card. The chuck driving unit may drive a chuck configured to support the wafer to align the wafer with the probe card. In this way, the semiconductor device formed on the wafer and the needle formed on the probe card are connected to each other, so that the tester can provide electrical signals to the semiconductor device through the probe card to check the electrical performance of the semiconductor device.
另一方面,隨著形成於探針卡上的針的數量增加,可能需要增加卡盤驅動單元的剛性和容量。近來,有增加包含在卡盤驅動單元中的馬達、LM導件、滾珠螺桿等的尺寸的趨勢。On the other hand, as the number of pins formed on the probe card increases, it may be necessary to increase the rigidity and capacity of the chuck drive unit. Recently, there is a trend to increase the size of motors, LM guides, ball screws, etc. included in the chuck drive unit.
特別地,隨著需要施加到針上的總負載增加到1000kg或更多,卡盤驅動單元的尺寸增加,從而增加了整個探針台的尺寸。In particular, as the total load that needs to be applied to the needle increases to 1000 kg or more, the size of the chuck drive unit increases, thereby increasing the size of the entire probe station.
本發明的實施例提供了一種用於測試半導體裝置的設備,其能夠應對用於晶圓牢固接觸探針卡所需負載的增加。Embodiments of the present invention provide an apparatus for testing semiconductor devices, which can cope with an increase in load required for a wafer to firmly contact a probe card.
本發明的實施例提供了一種用於測試半導體裝置的方法,其能夠應對晶圓牢固接觸探針卡所需負載的增加。The embodiment of the present invention provides a method for testing a semiconductor device, which can cope with an increase in load required for a wafer to firmly contact a probe card.
根據本發明的示例性實施例,公開了一種用於測試半導體裝置的設備,該設備包括測試室;設置在測試室的上部並配置為保持探針卡的卡座,該探針卡將電信號傳輸到形成於晶圓上的半導體裝置;位於測試室中的卡盤,卡盤設置為在測試室內支承晶圓並面向卡座;配置為驅動卡盤以使半導體裝置接觸探針卡的卡盤驅動單元;以及配置為在卡座和卡盤之間產生電磁力以增加施加於探針卡和晶圓之間的負載的磁力產生單元。According to an exemplary embodiment of the present invention, an apparatus for testing a semiconductor device is disclosed. The apparatus includes a test chamber; a card holder arranged at the upper part of the test chamber and configured to hold a probe card, and the probe card transmits electrical signals. Transfer to the semiconductor device formed on the wafer; a chuck located in the test chamber, the chuck is set to support the wafer in the test chamber and face the chuck; the chuck configured to drive the chuck so that the semiconductor device contacts the probe card A drive unit; and a magnetic force generating unit configured to generate electromagnetic force between the card holder and the chuck to increase the load applied between the probe card and the wafer.
在一個示例性實施例中,磁力產生單元可包括設置為環繞卡盤外周的電磁體構件,該電磁體構件利用電力產生磁場。In an exemplary embodiment, the magnetic force generating unit may include an electromagnet member disposed to surround the outer circumference of the chuck, and the electromagnet member generates a magnetic field using electric power.
在此,磁力產生單元還可包括磁性構件,其鄰近卡座設置以面向電磁體構件,且磁性構件設置為增加電磁場。Here, the magnetic force generating unit may further include a magnetic member disposed adjacent to the holder to face the electromagnet member, and the magnetic member is disposed to increase the electromagnetic field.
而且,磁力產生單元還可包括電源和電源控制器,電源用於向電磁體構件提供電力,電源控制器用於調節電力的大小。Moreover, the magnetic force generating unit may further include a power source and a power source controller, the power source is used to provide power to the electromagnet member, and the power source controller is used to adjust the size of the power.
在一個示例性實施例中,緩衝構件可進一步設置於磁力產生單元和卡座之間,且緩衝構件配置為緩解發生在探針卡的針和半導體裝置的焊盤之間的衝擊。In an exemplary embodiment, a buffer member may be further provided between the magnetic force generating unit and the card holder, and the buffer member is configured to relieve an impact occurring between the needle of the probe card and the pad of the semiconductor device.
在一個示例性實施例中,緩衝構件可包括阻尼器、彈簧和彈性板中的至少一個。In an exemplary embodiment, the buffer member may include at least one of a damper, a spring, and an elastic plate.
在此,緩衝構件可設置在磁力產生單元上。Here, the buffer member may be provided on the magnetic force generating unit.
在一個示例性實施例中,測試室可包括形成於其上壁上用於容納探針卡的接收槽。In an exemplary embodiment, the test chamber may include a receiving groove formed on an upper wall thereof for receiving the probe card.
在一個示例性實施例中,電磁波遮罩構件可進一步鄰近接收槽設置。In an exemplary embodiment, the electromagnetic wave shield member may be further disposed adjacent to the receiving groove.
在此,電磁波遮罩構件可沿接收槽的內側壁設置。Here, the electromagnetic wave shielding member may be provided along the inner side wall of the receiving groove.
而且,電磁波遮罩構件可包括金屬薄膜。Also, the electromagnetic wave shield member may include a metal thin film.
根據本發明的示例性實施例,公開了一種用於測試半導體裝置的方法,該方法包括:將配置為向形成於晶圓上的半導體裝置傳輸電信號的探針卡安裝在卡座中;將晶圓安裝在設置為面向卡座的卡盤上;驅動卡盤首先使半導體裝置接觸探針卡,並使用電磁力增加施加在探針卡和晶圓之間的負載。According to an exemplary embodiment of the present invention, a method for testing a semiconductor device is disclosed. The method includes: installing a probe card configured to transmit electrical signals to a semiconductor device formed on a wafer in a holder; The wafer is mounted on a chuck set to face the chuck; the drive chuck first makes the semiconductor device contact the probe card and uses electromagnetic force to increase the load applied between the probe card and the wafer.
在一個示例性實施例中,驅動卡盤進一步可包括使半導體裝置對準探針卡。In an exemplary embodiment, driving the chuck may further include aligning the semiconductor device with the probe card.
在一個示例性實施例中,增加探針卡和晶圓之間的負載可包括調整施加到鄰近卡盤設置的電磁體構件的電力值。In an exemplary embodiment, increasing the load between the probe card and the wafer may include adjusting the value of electric power applied to an electromagnet member disposed adjacent to the chuck.
而且,增加探針卡與晶圓之間的負載可進一步包括利用鄰近卡座設置的磁性構件,以面向電磁體構件。Moreover, increasing the load between the probe card and the wafer may further include using a magnetic member disposed adjacent to the card holder to face the electromagnet member.
在一個示例性實施例中,增加探針卡和晶圓之間的負載可包括緩解發生在探針卡的針和半導體裝置的焊盤之間的衝擊。In an exemplary embodiment, increasing the load between the probe card and the wafer may include mitigating the impact that occurs between the pins of the probe card and the pads of the semiconductor device.
在一個示例性實施例中,將探針卡安裝在卡座中可包括將探針卡定位在形成於測試室的上壁上的接收槽中。In an exemplary embodiment, installing the probe card in the holder may include positioning the probe card in a receiving groove formed on the upper wall of the test chamber.
在一個示例性實施例中,可藉由探針卡將電信號從測試器施加到半導體裝置。In an exemplary embodiment, the electrical signal may be applied from the tester to the semiconductor device by a probe card.
在此,將電信號施加到半導體裝置可包括將電磁波與測試器遮罩。Here, applying the electrical signal to the semiconductor device may include shielding the electromagnetic wave with the tester.
根據本發明的示例性實施例,公開了一種用於測試半導體裝置的設備,該設備包括測試室;設置在測試室的上部並配置成保持探針卡的卡座,探針卡將電信號傳輸到形成於晶圓上的半導體裝置;位於測試室中的卡盤,卡盤設置為在測試室內支承晶片並面向卡座;配置為驅動卡盤以使半導體裝置接觸探針卡的卡盤驅動單元;以及配置為在卡座和卡盤之間產生電磁力以增加施加於探針卡和晶圓之間的負載的磁力產生單元,其中,磁力產生單元包括設置為環繞卡盤外周的電磁體構件,該電磁體構件利用電力產生磁場,和鄰近卡座設置以面向電磁體構件的磁性構件,磁性構件設置為增加電磁場。According to an exemplary embodiment of the present invention, an apparatus for testing a semiconductor device is disclosed. The apparatus includes a test chamber; a card holder arranged in the upper part of the test chamber and configured to hold a probe card, and the probe card transmits electrical signals. To the semiconductor device formed on the wafer; the chuck located in the test chamber, the chuck is set to support the wafer in the test chamber and face the chuck; the chuck drive unit configured to drive the chuck so that the semiconductor device contacts the probe card And a magnetic force generating unit configured to generate electromagnetic force between the holder and the chuck to increase the load applied between the probe card and the wafer, wherein the magnetic force generating unit includes an electromagnet member arranged to surround the periphery of the chuck The electromagnet member uses electric power to generate a magnetic field, and is disposed adjacent to the holder to face the magnetic member of the electromagnet member, and the magnetic member is arranged to increase the electromagnetic field.
根據上述本公開的示例性實施例,用於測試半導體裝置的設備包括電磁力產生單元,其用於產生施加於卡座和卡盤之間的電磁力。因此,當探針卡和晶圓之間的所需負載隨著形成於探針卡中的針的數量的增加而增加時,電磁力產生單元可增加負載以應對所需的負載。此外,電磁力產生單元可藉由部分分擔豎直驅動模組的載量而部分縮小豎直驅動模組。According to the exemplary embodiment of the present disclosure described above, the apparatus for testing a semiconductor device includes an electromagnetic force generating unit for generating an electromagnetic force applied between the chuck and the chuck. Therefore, when the required load between the probe card and the wafer increases as the number of pins formed in the probe card increases, the electromagnetic force generating unit can increase the load to cope with the required load. In addition, the electromagnetic force generation unit can partially reduce the vertical drive module by partially sharing the load of the vertical drive module.
本公開的上述概述並不旨在描述本公開的每個圖示實施例或每個實施方式。更特別地,以下詳細描述和申請專利範圍舉例說明了這些實施例。The above summary of the present disclosure is not intended to describe each illustrated embodiment or every implementation of the present disclosure. More specifically, the following detailed description and patent application exemplify these embodiments.
雖然各種實施例可做出各種修改和替代形式,但其具體細節已在圖中以示例方式示出,並將詳細描述。然而,應理解,本發明並不是將所主張的發明限於所描述的特定實施例。相反,本發明涵蓋了落在本發明主題如申請專利範圍限定的實質和範圍內的所有修改、等同物和替代物。Although various modifications and alternative forms can be made to the various embodiments, the specific details thereof have been shown by way of example in the drawings and will be described in detail. However, it should be understood that the present invention does not limit the claimed invention to the specific embodiments described. On the contrary, the present invention covers all modifications, equivalents and alternatives falling within the spirit and scope of the subject matter of the present invention as defined by the scope of the patent application.
以下,參照圖式詳細描述關於滾道單元和具有該滾道單元的OHT的具體實施例。然而,本發明可以不同形式體現,並且不應解釋為限於本文所述的實施例。相反,提供這些實施例使得本公開是徹底和完整的,並將本發明的範圍充分傳達給本領域的技術人員。相同的圖式符號說明在全文中指代相同的元件。在圖中,為了說明的清楚,誇大了層和區域的尺寸。Hereinafter, specific embodiments of the raceway unit and the OHT with the raceway unit will be described in detail with reference to the drawings. However, the present invention may be embodied in different forms and should not be construed as being limited to the embodiments described herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. The same drawing symbols refer to the same elements throughout the text. In the figure, for clarity of description, the sizes of layers and regions are exaggerated.
諸如第一、第二等的術語可用於描述各種元件,但由上述術語描述的上述元件不應受到限制。上述術語僅用於區分一個元件與另一個元件。例如,在本發明中,在不脫離範圍的情況下,第一元件可類似地命名為第二元件,第二元件也可類似地命名為第一元件。Terms such as first, second, etc. can be used to describe various elements, but the above elements described by the above terms should not be limited. The above terms are only used to distinguish one element from another. For example, in the present invention, without departing from the scope, the first element may be similarly named as the second element, and the second element may also be similarly named as the first element.
本文使用的術語僅用於描述特定示例性實施例的目的,並不旨在限制本發明的構思。如本文所使用的,單數形式「一」和「該」也旨在包括複數形式,除非上下文清楚地另外表明。還應理解,當在本說明書中使用術語「包括」時,表明所述特徵、整數、步驟、操作、元件及/或元件的存在,但並不排除一個或多個其他特徵、整數、步驟、操作、元件、元件及/或其組合的存在或附加。The terminology used herein is only for the purpose of describing specific exemplary embodiments and is not intended to limit the concept of the present invention. As used herein, the singular forms "a" and "the" are also intended to include the plural form, unless the context clearly indicates otherwise. It should also be understood that when the term "comprises" is used in this specification, it indicates the existence of the features, integers, steps, operations, elements, and/or elements, but does not exclude one or more other features, integers, steps, The presence or addition of operations, elements, elements and/or combinations thereof.
除非另有定義,否則本文中使用的所有術語(包括技術和科學術語)具有與本發明構思所屬領域的普通技術人員通常理解相同的含義。還應理解,諸如常用詞典中定義的那些術語應解釋為具有與其在相關領域上下文中相一致的含義,且不應以理想化或過度形式化的方式解釋,除非本文中明確定義。Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the inventive concept belongs. It should also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their context in the relevant field, and should not be interpreted in an idealized or over-formalized manner unless explicitly defined herein.
圖1是根據本發明一實施例之用於測試半導體裝置的設備的截面圖。圖2是圖1中卡盤和卡盤驅動單元的截面圖。圖3是圖1中卡座的截面圖。FIG. 1 is a cross-sectional view of an apparatus for testing a semiconductor device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view of the chuck and the chuck drive unit in Fig. 1. Fig. 3 is a cross-sectional view of the card holder in Fig. 1.
參照圖1至圖3,根據本發明一實施例之用於測試半導體裝置的設備100可使用探針卡20對形成於晶圓10上的半導體裝置進行電特性檢查。1 to 3, the
該設備100包括測試室105、卡盤130、卡盤驅動單元120、卡座110和電磁力產生單元150。The
測試室105可提供用於對形成於晶圓10上的半導體裝置執行電性能檢查的處理空間。The
卡盤130設置於處理空間中。卡盤130可支承晶圓10。卡盤130可藉由使用靜電力或真空力將晶圓10固定在其上表面。The
卡盤驅動單元120設置在卡盤130下方。卡盤驅動單元120驅動卡盤130以移動晶圓10從而使半導體裝置接觸探針卡20,使得半導體的焊盤與探針卡20的針接觸。The
更具體地,卡盤驅動單元120包括旋轉模組121、豎直驅動模組123、第一水平驅動模組124和第二水平驅動模組125。More specifically, the
旋轉模組121使得卡盤130旋轉。因此,晶圓10旋轉以與探針卡20沿R方向對準。The
豎直驅動模組123調整卡盤130的豎直位置。因此,定位在卡盤130上的晶圓10可與探針卡20接觸,或者可與探針卡20隔開。The
同時,第一和第二水平驅動模組124和125可使卡盤130沿第一水平方向和垂直於第一水平方向的第二水平方向移動。因此,第一和第二水平驅動模組124和125調整卡盤130的水平位置。At the same time, the first and second horizontal driving
卡座110設置在測試室105的上部。卡座110可配置為保持探針卡20。卡座110可藉由夾持方式或卡合方式保持探針卡20。The
電磁力產生單元150在卡座110和卡盤130之間產生電磁力。因此,可增加施加於保持在卡座110上的探針卡20與支承在卡盤130上的晶圓10之間的負載。The electromagnetic
因此,當探針卡20和晶圓10之間所需的負載隨著形成於探針卡20上的針22的數量增加而增加時,電磁力產生單元150可應對所需負載的增加。Therefore, when the load required between the
另一方面,電磁力產生單元150可與豎直驅動模組123分擔增加的所需負載,以使豎直驅動模組123的尺寸小型化。On the other hand, the electromagnetic
在本發明的一個實施例中,磁力產生單元150設置為環繞卡盤130的外周。磁力產生單元150可包括能夠利用電力產生磁場的電磁體構件151。In an embodiment of the present invention, the magnetic
電磁體構件151包括磁體(未示出)和圍繞磁體的線圈(未示出),電流流過該線圈。在這種情況下,電磁體構件151可藉由調整流過線圈的電流大小來控制電磁力的大小。相應地,可調整晶圓10和探針卡20之間牢固接觸所需的過驅動值。在此,過驅動值(over-driving value)可對應於藉由將支承晶圓10的卡盤130提升至比參考位置高的豎直位置的接觸力,所以探針卡20和晶圓10可更牢固地連接,以使至半導體裝置的電連接牢固。The
因此,可容易地控制各種類型半導體裝置所需的各種過驅動值。Therefore, various overdrive values required for various types of semiconductor devices can be easily controlled.
此外,藉由對電流的導通/斷開控制,可容易地開啟或關閉晶圓10和探針卡20之間的電磁力。In addition, by controlling the on/off of the current, the electromagnetic force between the
另一方面,電磁體構件151設置於卡盤130的外周上,其與測試器30隔開相對較長。因此,可抑制電磁體構件151產生的電磁波干擾測試器30的測試步驟。On the other hand, the
在本發明的一個實施例中,磁力產生單元150還可包括磁性構件155。磁性構件155臨近卡座110設置,以面向電磁體構件151。設置磁性構件155以進一步增加電磁場。因此,電磁體構件151和磁性構件155可提高電磁力。In an embodiment of the present invention, the magnetic
在本發明的一個示例性實施例中,磁力產生單元150還可包括電源153和電源控制器154。電源153向包括在電磁體構件151中的線圈提供電力。電源控制器154調整電源153提供的電力的大小。因此,由於流過電磁體構件151的電流大小被控制,電磁體構件151產生的電磁力的大小可被調整。In an exemplary embodiment of the present invention, the magnetic
在本發明的一個實施例中,設備100還可包括緩衝構件170。In an embodiment of the present invention, the
緩衝構件170設置於磁力產生單元150和卡座110之間。例如,緩衝構件170可插在電磁體構件151和磁性構件155之間。因此,當探針卡20和晶圓10藉由電磁力在高負載下接觸時,可減輕對包含在探針卡20中的針22的衝擊,以防止探針卡20損壞。The
緩衝構件170可包括阻尼器、彈簧、和彈性板等中的至少一個。或者,當探針卡20和晶圓10接觸時,緩衝構件170可包括減輕對包含在探針卡20中的針22的衝擊的其他構件。The
在本發明的一個示例性實施例中,測試室105的上壁設有用於容納探針卡20的接收槽105a。鄰近接收槽105a可額外設置電磁波遮罩構件180。In an exemplary embodiment of the present invention, the upper wall of the
在此,電磁波遮罩構件180可沿接收槽105a的內壁設置。即,電磁波遮罩構件180可抑制驅動磁力產生單元150時產生的電磁波傳播通過接收槽105a到測試器30中。因此,在對半導體裝置執行檢測過程時,電磁波遮罩構件180可藉由阻擋磁力產生單元150產生的電磁波來防止測試器30在檢測過程發生錯誤。Here, the electromagnetic
在此,電磁波遮罩構件180可包括金屬薄膜。電磁波遮罩構件180可藉由濺射程序和噴塗程序形成。Here, the electromagnetic
圖4是根據本發明的一個示例性實施例之用於測試半導體裝置的方法的流程圖。FIG. 4 is a flowchart of a method for testing a semiconductor device according to an exemplary embodiment of the present invention.
參照圖1和圖4,公開了根據本發明的一個示例性實施例用於測試半導體裝置的方法。將用於向形成於晶圓上的半導體裝置傳送電信號的探針卡20安裝在卡座110上(步驟S110)。同時,將晶圓安裝在面向卡座的卡盤130上(步驟S130)。1 and 4, a method for testing a semiconductor device according to an exemplary embodiment of the present invention is disclosed. The
在將晶圓10對準探針卡20後,驅動卡盤130使半導體裝置10與探針卡20接觸(步驟S150)。After the
藉由使用電磁力來增加探針卡20和半導體裝置之間的負載(步驟S170)。因此,形成於探針卡20上的針22可更可靠地連接到半導體裝置的焊盤上。The load between the
在此,在藉由電磁力增加探針卡20和晶圓10之間的負載的同時,可調整施加到鄰近卡盤130設置的電磁體構件151的電力值。因此,由於流過電磁體構件151的電流大小被控制,可調整電磁體構件151產生的電磁力的大小。Here, while the load between the
之後,藉由探針卡20向形成於晶圓10上的半導體裝置施加測試信號。在此,測試半導體裝置的設備100可連接到測試器30,以檢查半導體裝置10的電性能。測試器30藉由探針卡20將測試信號施加到形成於晶圓10上的半導體裝置,以使用半導體裝置輸出的信號來檢查晶圓10的電性能。After that, the
儘管已參考具體實施例描述了無線電力傳輸設備和無線電力傳輸方法,但它們並不限於此。因此,本領域技術人員應容易地理解,在不脫離本發明之由所附申請專利範圍限定的實質和範圍的情況下,可對其進行各種修改和改變。Although the wireless power transmission device and the wireless power transmission method have been described with reference to specific embodiments, they are not limited thereto. Therefore, those skilled in the art should easily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention defined by the scope of the appended patent application.
10:晶圓
20:探針卡
22:針
30:測試器
100:用於測試半導體裝置的設備
105:測試室
105a:接收槽
110:卡座
120:卡盤驅動單元
121:旋轉模組
123:豎直驅動模組
124:第一水平驅動模組
125:第二水平驅動模組
130:卡盤
150:磁力產生單元
151:電磁體構件
153:電源
154:電源控制器
155:磁性構件
170:緩衝構件
180:電磁波遮罩構件
S110、S130、S150、S170:步驟10: Wafer
20: Probe card
22: Needle
30: Tester
100: Equipment for testing semiconductor devices
105:
結合圖式,根據以下描述可更詳細地理解示例性實施例。其中:With reference to the drawings, the exemplary embodiments can be understood in more detail based on the following description. among them:
圖1是根據本發明一實施例之用於測試半導體裝置的設備的截面圖;1 is a cross-sectional view of an apparatus for testing semiconductor devices according to an embodiment of the present invention;
圖2是圖1中卡盤和卡盤驅動單元的截面圖;Figure 2 is a cross-sectional view of the chuck and the chuck drive unit in Figure 1;
圖3是圖1中卡座的截面圖;以及Figure 3 is a cross-sectional view of the card holder in Figure 1; and
圖4是根據本發明一示例性實施例之用於測試半導體裝置的方法的流程圖。FIG. 4 is a flowchart of a method for testing a semiconductor device according to an exemplary embodiment of the present invention.
10:晶圓 10: Wafer
20:探針卡 20: Probe card
22:針 22: Needle
30:測試器 30: Tester
100:用於測試半導體裝置的設備 100: Equipment for testing semiconductor devices
105:測試室 105: test room
110:卡座 110: deck
120:卡盤驅動單元 120: chuck drive unit
121:旋轉模組 121: Rotation module
123:豎直驅動模組 123: Vertical drive module
124:第一水平驅動模組 124: The first horizontal drive module
125:第二水平驅動模組 125: second horizontal drive module
130:卡盤 130: Chuck
150:磁力產生單元 150: Magnetic force generating unit
151:電磁體構件 151: Electromagnet component
155:磁性構件 155: Magnetic component
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