TW202044486A - 半導體裝置及攝像裝置 - Google Patents

半導體裝置及攝像裝置 Download PDF

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Publication number
TW202044486A
TW202044486A TW109106401A TW109106401A TW202044486A TW 202044486 A TW202044486 A TW 202044486A TW 109106401 A TW109106401 A TW 109106401A TW 109106401 A TW109106401 A TW 109106401A TW 202044486 A TW202044486 A TW 202044486A
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TW
Taiwan
Prior art keywords
substrate
wiring
imaging device
semiconductor substrate
insulating film
Prior art date
Application number
TW109106401A
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English (en)
Chinese (zh)
Inventor
長濱嘉彥
Original Assignee
日商索尼半導體解決方案公司
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Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202044486A publication Critical patent/TW202044486A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW109106401A 2019-03-07 2020-02-27 半導體裝置及攝像裝置 TW202044486A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019041133 2019-03-07
JP2019-041133 2019-03-07

Publications (1)

Publication Number Publication Date
TW202044486A true TW202044486A (zh) 2020-12-01

Family

ID=72337942

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109106401A TW202044486A (zh) 2019-03-07 2020-02-27 半導體裝置及攝像裝置

Country Status (4)

Country Link
US (1) US12501733B2 (https=)
JP (1) JPWO2020179494A1 (https=)
TW (1) TW202044486A (https=)
WO (1) WO2020179494A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7756713B2 (ja) * 2021-05-26 2025-10-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
JP2022184222A (ja) * 2021-05-31 2022-12-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子
US12046620B2 (en) * 2021-12-15 2024-07-23 Nanya Technology Corporation Optical semiconductor device with composite intervening structure

Family Cites Families (24)

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JPH07245306A (ja) 1994-01-17 1995-09-19 Sony Corp 半導体装置における膜平坦化方法
KR100286126B1 (ko) * 1999-02-13 2001-03-15 윤종용 다층의 패시배이션막을 이용한 도전층 사이에 공기 공간을 형성하는 방법
US7042095B2 (en) 2002-03-29 2006-05-09 Renesas Technology Corp. Semiconductor device including an interconnect having copper as a main component
JP2004193431A (ja) * 2002-12-12 2004-07-08 Renesas Technology Corp 半導体装置およびその製造方法
US20060183317A1 (en) * 2003-03-14 2006-08-17 Junji Noguchi Semiconductor device and a method of manufacturing the same
JP5204370B2 (ja) 2005-03-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4956919B2 (ja) * 2005-06-08 2012-06-20 株式会社日立製作所 半導体装置およびその製造方法
FR2888989B1 (fr) * 2005-07-21 2008-06-06 St Microelectronics Sa Capteur d'images
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide
JP5334434B2 (ja) 2007-06-04 2013-11-06 パナソニック株式会社 半導体装置の製造方法
JP5326949B2 (ja) 2009-09-09 2013-10-30 株式会社日立製作所 半導体装置
JP2012015400A (ja) 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2013149679A (ja) 2012-01-17 2013-08-01 Toshiba Corp 半導体装置
KR20130092884A (ko) * 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 반도체 소자의 배선 구조체 및 제조 방법
US8629524B2 (en) 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US8669135B2 (en) 2012-08-10 2014-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for fabricating a 3D image sensor structure
JP2014236183A (ja) 2013-06-05 2014-12-15 株式会社東芝 イメージセンサ装置及びその製造方法
JP2015023150A (ja) * 2013-07-19 2015-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6521586B2 (ja) * 2014-07-31 2019-05-29 キヤノン株式会社 固体撮像素子および撮像システム
KR102628719B1 (ko) 2016-02-12 2024-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN108140577B (zh) * 2016-02-23 2022-09-09 瑞萨电子株式会社 半导体器件及其制造方法
KR102491496B1 (ko) * 2018-01-05 2023-01-20 삼성전자주식회사 광전 소자, 이미지 센서 및 전자 장치
JP7353729B2 (ja) * 2018-02-09 2023-10-02 キヤノン株式会社 半導体装置、半導体装置の製造方法
US10468297B1 (en) * 2018-04-27 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-based etch-stop layer

Also Published As

Publication number Publication date
WO2020179494A1 (ja) 2020-09-10
JPWO2020179494A1 (https=) 2020-09-10
US20220123040A1 (en) 2022-04-21
US12501733B2 (en) 2025-12-16

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