TW202044376A - Wafer bonding film and manufacturing method capable of facilitating subsequent semiconductor packaging processing process and greatly improving overall processing efficiency and product yield - Google Patents

Abstract

The present invention relates to a wafer bonding film and a manufacturing method thereof. The wafer bonding film includes a wafer dicing carrier layer, an intermediate bonding layer, and a wafer bonding layer. The intermediate bonding layer is attached to the wafer dicing carrier layer. A wafer is placed on the wafer bonding layer, and the wafer bonding layer has excellent adhesion to the wafer. In particular, after irradiated with ultraviolet light, the wafer dicing carrier layer will reduce or lose its adhesion to the intermediate bonding layer, so the wafer can be placed on the wafer bonding layer quite firmly. In the meantime, the intermediate bonding layer can be easily detached from the wafer dicing carrier layer, which facilitates the subsequent semiconductor packaging processing process and greatly improves the overall processing efficiency and product yield.

Description

Wafer bonding film and manufacturing method

The present invention relates to a wafer bonding film and a manufacturing method, in particular to use an intermediate bonding layer and a wafer bonding layer to form a double-layer structure, and the intermediate bonding layer located under the double-layer structure is attached to the wafer cutting carrier layer, And the wafer is placed on the wafer bonding layer above the double-layer structure, and the wafer bonding layer has excellent adhesion to the wafer, and the wafer dicing carrier layer irradiated with ultraviolet light will reduce the adhesion or the intermediate bonding layer. Loss of adhesiveness, the wafer can be placed on the wafer bonding layer quite firmly, and the middle bonding layer can be easily separated from the wafer cutting carrier layer, which facilitates the subsequent semiconductor packaging process and greatly improves the overall processing efficiency and products Yield rate.

In the semiconductor manufacturing process, the wafer after the multi-channel lithography process already contains multiple dies, and each die contains electrical circuits. It needs to be cut appropriately to separate individual dies for subsequent wire bonding, Packaging process to form a commercially available integrated circuit (IC).

In order to cut the wafer to separate individual dies, it is necessary to fix the wafer on a specific carrier film first, and conventional technologies often use die attaching file (DAF) as the required carrier film. Specifically, the upper surface of the die attach film is used to place the wafer, and the lower surface of the die attach film is used to attach to the wafer dicing carrier layer, wherein the upper surface of the die attach film is opposite to The wafer has considerable adhesiveness to stabilize the wafer and avoid movement. After the wafer dicing carrier layer is irradiated with ultraviolet light, the lower surface of the die attach film will lose its adhesiveness, so it can be easily separated from each other.

In short, the die attach film must have strong adhesiveness to the wafer and low adhesiveness to the wafer dicing carrier layer.

In the conventional technology, the upper and lower interfaces of the die attach film are generally adjusted to a moderate level of attaching properties, and then a silicone coupling agent is added to improve the affinity to the wafer surface. However, the disadvantage of the above-mentioned conventional technology is that it cannot at the same time maintain a very low viscosity to the wafer dicing carrier layer. Therefore, there is a great need for an innovative wafer bonding film and manufacturing method to improve the overall wafer processing efficiency and product yield, so as to solve all the problems of the conventional technology.

The main purpose of the present invention is to provide a wafer bonding film, which includes a wafer dicing carrier layer, an intermediate bonding layer, and a wafer bonding layer that are electrically insulating and stacked sequentially from bottom to top, and the thickness of the middle bonding layer is greater than Or equal to the thickness of the wafer bonding layer, which can be used to bond and carry bonded wafers, and facilitate subsequent processing of the wafers.

Specifically, the wafer cutting carrier layer is electrically insulating, has an upper surface and a lower surface, and includes a first resin material, a photoinitiator, and a fluorine-modified acrylic resin. The fluorine-modified acrylic resin is The weight percentage in the supporting layer is 1 to 5%, and the first resin material includes acrylic resin.

The intermediate bonding layer is electrically insulating and has an upper surface and a lower surface. The lower surface of the intermediate bonding layer is attached to the upper surface of the wafer dicing carrier layer. In particular, the upper surface of the wafer dicing carrier layer faces the middle bonding layer. The bottom surface is sticky. In addition, the intermediate bonding layer includes a second resin material, a polycyclic resin, an inorganic material, and an intermediate bonding layer hardener, wherein the second resin material includes at least one of an epoxy resin and an acrylic resin, and the polycyclic resin includes a fluorene ring resin And at least one of the naphthalene ring resins, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%.

The wafer bonding layer is electrically insulating and has an upper surface and a lower surface. The lower surface of the wafer bonding layer is attached to the upper surface of the intermediate bonding layer, and the upper surface of the wafer bonding layer is adhesive to the wafer , For attaching and placing wafers. In addition, the wafer bonding layer includes a third resin material and a wafer bonding hardener, wherein the third resin material includes at least one of epoxy resin and acrylic resin.

Furthermore, the photo-initiator of the wafer dicing carrier layer promotes the reaction of the wafer dicing carrier layer when irradiated with ultraviolet light, and after the reaction, the upper surface of the wafer dicing carrier layer loses adhesion to the lower surface of the intermediate bonding layer. Sexually separate from each other.

Another object of the present invention is to provide a method for manufacturing a wafer bonding film, including: coating a first mixture on a substrate, and forming a wafer dicing carrier layer after standing, the first mixture containing a first resin material, light Starter and fluorine-modified acrylic resin. The weight percentage of fluorine-modified acrylic resin in the wafer cutting carrier layer is 1~5%. The first resin material contains acrylic resin; the second resin material is coated on the wafer cutting carrier layer. The second mixture includes a second resin material, a polycyclic resin, an inorganic material, and an intermediate bonding layer hardener, and the second resin material includes at least one of an epoxy resin and an acrylic resin , The polycyclic resin includes at least one of fluorene ring resin and naphthalene ring resin, and the weight percentage of the inorganic material in the intermediate bonding layer is 50~80%; the third mixture is coated on the intermediate bonding layer and left to stand still Then the wafer bonding layer is formed, the third mixture includes a third resin material and a wafer bonding hardener, the third resin material includes at least one of epoxy resin and acrylic resin; and the substrate is removed to obtain a bottom-up The wafer bonding film of the wafer dicing carrier layer, the intermediate bonding layer and the wafer bonding layer are stacked in sequence.

Therefore, the present invention uses the intermediate bonding layer and the wafer bonding layer to form a double-layer structure, and the intermediate bonding layer located under the double-layer structure is attached to the wafer cutting carrier layer, and the wafer bonding layer located above the double-layer structure Place the wafer, especially, the wafer bonding layer has excellent adhesion to the wafer, and the wafer dicing carrier layer irradiated with ultraviolet light will reduce or lose its adhesion to the intermediate bonding layer. Obviously, the wafer can be placed on the wafer bonding layer quite firmly, and at the same time, the intermediate bonding layer can be easily separated from the wafer cutting carrier layer, which facilitates the subsequent semiconductor packaging process and greatly improves the overall processing efficiency and products Yield rate.

The following is a more detailed description of the implementation of the present invention in conjunction with the drawings and component symbols, so that those who are familiar with the art can implement it after studying this manual.

Please refer to the first figure, which is a schematic diagram of a wafer bonding film according to a first embodiment of the present invention. As shown in the first figure, the wafer bonding film of the present invention includes a wafer dicing carrier layer 10, an intermediate bonding layer 20, and a wafer bonding layer 30 that are electrically insulating and stacked sequentially from bottom to top, which can be used for bonding, Carrying a bonding wafer (Wafer) 40 to facilitate subsequent cutting and packaging processing.

Specifically, the wafer dicing carrier layer 10 has an upper surface and a lower surface, and includes a first resin material, a photoinitiator, and a fluorine-modified acrylic resin. The first resin material includes acrylic resin and a fluorine-modified acrylic resin. The weight percentage of resin in the entire wafer dicing carrier layer is 1-5%.

In addition, the intermediate bonding layer 20 has an upper surface and a lower surface, and includes a second resin material, a polycyclic resin, an inorganic material, and an intermediate bonding layer hardener. The lower surface of the intermediate bonding layer 20 is attached to the upper surface of the wafer dicing carrier layer 10, and the upper surface of the wafer dicing carrier layer 10 has adhesiveness to the lower surface of the intermediate bonding layer 20. Further, the second resin material includes at least one of epoxy resin and acrylic resin, and the polycyclic resin may include at least one of fluorene ring resin and naphthalene ring resin, and the inorganic material may include silicon dioxide (SiO ₂ ) , And the weight percentage in the intermediate bonding layer 20 is 50-80%.

The thickness of the intermediate bonding layer 20 is specifically designed to be greater than or equal to the thickness of the wafer bonding layer 10, and the glass transition temperature (Tg) of the intermediate bonding layer 20 is between 120°C and 220°C. In addition, the thermal expansion coefficient of the intermediate bonding layer 20 is between 20 and 50 ppm/K when the glass transition temperature is below, and the thermal expansion coefficient of the intermediate bonding layer 20 is between 120 and 250 ppm/K when the glass transition temperature is above.

Furthermore, the wafer bonding layer 30 has an upper surface and a lower surface, and includes a third resin material and a wafer bonding hardener. The lower surface of the wafer bonding layer 30 is attached to the upper surface of the intermediate bonding layer 20, and the upper surface of the wafer bonding layer 30 has adhesiveness to the wafer 40 and is used for attaching and placing the wafer 40. Further, the third resin material includes at least one of epoxy resin and acrylic resin.

More specifically, the photo-initiator of the wafer dicing carrier layer 10 can promote a specific reaction of the wafer dicing carrier layer 10 when irradiated with ultraviolet light (UV), and after the reaction, the wafer dicing carrier layer The upper surface of 10 will lose its adhesion to the lower surface of the intermediate bonding layer 20 and separate from each other. In particular, the fluorine-modified acrylic resin can be used to change the surface characteristics of the wafer dicing carrier layer 10 after a specific reaction, such as increasing the surface tension, so that it is easily separated from the intermediate bonding layer 20.

The main purpose of the wafer bonding film of the present invention is to firmly bond and place the wafer 40 to facilitate subsequent dicing of the wafer 40 to form multiple dies or chips. At the same time, the wafer is cut and carried. The layer 10 is easily separated from the intermediate bonding layer 20 after being irradiated with ultraviolet light. Therefore, the water vapor transmission rate of the intermediate bonding layer 20 is specially designed to be lower than 10-15g/m2*day, and the wafer bonding layer 30 The water vapor penetration rate is lower than 10-15g/m2*day. In addition, in order to achieve proper mechanical strength, the thickness of the wafer dicing carrier layer 10 is specially designed to be between 20 and 50 μm, and the thickness of the wafer bonding layer 30 and the thickness of the intermediate bonding layer 20 in total are between 5 and 80 μm. .

In addition, please refer to the second figure, which is an operation flowchart of the method for manufacturing a wafer bonding film according to the second embodiment of the present invention. As shown in the second figure, the manufacturing method of the wafer bonding film according to the second embodiment of the present invention includes steps S10, S20, S30, and S40 for manufacturing the wafer bonding film.

First, in the manufacturing method of the present invention, in step S10, the first mixture is coated on a substrate, such as a glass plate, a plastic plate, or a metal plate, and the wafer cutting carrier layer is formed after standing for a predetermined period of time. The first mixture contains a first resin material, a photoinitiator, and a fluorine-modified acrylic resin, wherein the first resin material contains acrylic resin, and the weight percentage of the fluorine-modified acrylic resin in the wafer cutting carrier layer is 1 to 5 %.

Next, step S20 is performed, which is mainly to further coat the second mixture on the wafer cutting carrier layer formed in the above step S10, and form an intermediate bonding layer after standing for a predetermined period of time. The second mixture includes a second resin material, a polycyclic resin, an inorganic material, and an intermediate bonding layer hardener, wherein the second resin material includes at least one of an epoxy resin and an acrylic resin, and the polycyclic resin includes a fluorene ring resin and a naphthalene resin. At least one of the cyclic resins, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%.

In step S30, the third mixture is coated on the intermediate bonding layer, and the wafer bonding layer is formed after standing for a predetermined period of time. The third mixture may include a third resin material and a wafer bonding hardener, wherein the third resin material includes at least one of epoxy resin and acrylic resin.

Finally, step S40 is performed to remove the substrate to obtain a wafer bonding film including a wafer dicing carrier layer, an intermediate bonding layer, and a wafer bonding layer stacked sequentially from bottom to top, that is, the wafer bonding film itself is A film with a three-layer stacked structure.

It should be noted that the wafer bonding film manufactured by the manufacturing method of the second embodiment of the present invention has substantially the same features as the wafer bonding film of the first embodiment, and therefore will not be repeated.

In order to further illustrate the characteristics of the wafer bonding film of the present invention more clearly, please refer to Figures 3 to 7, which are schematic diagrams of the application of the wafer bonding film of the present invention, and take wafer dicing as an example. As shown in the third figure, the wafer 40 is first attached to the adhesive wafer bonding layer 30 of the wafer bonding film of the present invention, and thus fixed, and the ring frame 50 is further pressed against the wafer bonding layer 30 Above and close to the periphery of the wafer 40. In the fourth figure, the wafer 40 is cut by a wafer cutting tool 60 to form a plurality of dicing lanes C, such as an optical laser or a mechanical dicing knife.

In the fifth figure, the wafer dicing carrier layer 10 is irradiated with ultraviolet light L, such as from bottom to top, so that the wafer dicing carrier layer 10 reacts to greatly reduce the adhesion to the intermediate bonding layer 20, or even loses adhesion. Sex. Then in the sixth figure, a wafer clamper 70, such as a suction cup, is used to take out the individual dies 41 divided by the dicing path C in the wafer 40 from bottom to top one by one, in order to improve the removal of the die 41 For efficiency, the wafer pusher 71 can be further used to push the die 41 toward the lower surface of the wafer cutting carrier layer 10 from bottom to top.

In addition, the above-mentioned die 41 can be placed on the wafer carrier 80 and attached to the wafer carrier 80 by the intermediate bonding layer 20, that is, the wafer bonding layer 30 is sandwiched between the intermediate bonding layer 20 and the chip carrier 80. Between the plates 80, or alternatively, the above-mentioned multiple dies 41 can be stacked into a multilayer structure, as shown in FIG. 7, and then the multilayer structure is placed on the wafer carrier 80. At this time, the die 41 has been placed on the chip carrier 80, and the required wire bonding and packaging processes can be performed to complete the electrical connection and protect the die 41 from the external environment.

In summary, the present invention is characterized in that the intermediate bonding layer and the wafer bonding layer are used to form a double-layer structure, and the intermediate bonding layer located under the double-layer structure is attached to the wafer dicing carrier layer, and the double-layer structure The upper wafer bonding layer houses the wafers. In particular, the wafer bonding layer has excellent adhesion to the wafer, and the wafer dicing carrier layer irradiated with ultraviolet light will reduce or lose its adhesion to the intermediate bonding layer. Therefore, the wafer can be placed on the wafer bonding layer quite firmly, and at the same time, the intermediate bonding layer can be easily separated from the wafer cutting carrier layer, which facilitates the subsequent semiconductor packaging process.

The above descriptions are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Therefore, any modifications or changes related to the present invention made under the same spirit of the invention , Should still be included in the scope of the invention's intention to protect.

10: Wafer cutting carrier layer 20: Intermediate bonding layer 30: Wafer bonding layer 40: Wafer 41: Die 50: ring frame 60: Wafer cutting tool 70: Wafer gripper 71: Wafer Pusher 80: chip carrier C: Cutting road L: Ultraviolet light S10, S20, S30, S40: steps

The first figure shows a schematic diagram of a wafer bonding film according to the first embodiment of the present invention. The second figure shows the operation flow chart of the manufacturing method of the wafer bonding film according to the second embodiment of the present invention. The third to seventh figures show schematic diagrams of the application of the wafer bonding film of the present invention.

10: Wafer cutting carrier layer

20: Intermediate bonding layer

30: Wafer bonding layer

40: Wafer

Claims (10)

A wafer bonding film includes: A wafer dicing carrier layer is electrically insulating, has an upper surface and a lower surface, and includes a first resin material, a light initiator, and a fluorine-modified acrylic resin. The fluorine-modified acrylic resin is on the crystal The weight percentage in the circular cut bearing layer is 1 to 5%, and the first resin material includes acrylic resin; An intermediate bonding layer is electrically insulating and has an upper surface and a lower surface. The lower surface of the intermediate bonding layer is attached to the upper surface of the wafer dicing carrier layer, and the upper surface of the wafer dicing carrier layer Adhesive to the lower surface of the intermediate bonding layer, the intermediate bonding layer includes a second resin material, a polycyclic resin, an inorganic material, and an intermediate bonding layer hardener, and the second resin material includes epoxy and acrylic At least one of the resins, the polycyclic resin includes at least one of a fluorene ring resin and a naphthalene ring resin, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%; and A wafer bonding layer is electrically insulating and has an upper surface and a lower surface. The lower surface of the wafer bonding layer is attached to the upper surface of the intermediate bonding layer, and the upper surface of the wafer bonding layer faces the same The wafer has adhesiveness for attaching and placing the wafer, and the wafer bonding layer includes a third resin material and a wafer bonding hardener, the third resin material includes at least epoxy resin and acrylic resin one of them; Wherein a thickness of the intermediate bonding layer is greater than or equal to a thickness of the wafer bonding layer, the photo-initiator of the wafer dicing carrier layer promotes a reaction of the wafer dicing carrier layer when irradiated with ultraviolet light, and After the reaction, the upper surface of the wafer dicing carrier layer loses its adhesion to the lower surface of the intermediate bonding layer and separates from each other. According to the wafer bonding film described in claim 1, wherein a glass transition temperature (Tg) of the intermediate bonding layer is between 120°C and 220°C. According to the wafer bonding film described in item 2 of the patent application, a thermal expansion coefficient of the intermediate bonding layer is between 20 and 50 ppm/K when the glass transition temperature is below, and a thermal expansion coefficient of the intermediate bonding layer is Above the glass transition temperature, it is between 120 and 250 ppm/K, and the inorganic material contains silicon dioxide (SiO ₂ ). According to the wafer bonding film described in item 1 of the scope of patent application, wherein a water vapor transmission rate of the wafer bonding layer is lower than 10-15 g/m2*day, and a water vapor transmission rate of the intermediate bonding layer Less than 10-15g/m2*day. According to the wafer bonding film described in claim 1, wherein the thickness of the wafer bonding layer and the thickness of the intermediate bonding layer total between 5 and 80 μm, and a thickness of the wafer dicing carrier layer is Between 20 and 50μm. A method for manufacturing a wafer bonding film, including: Coat a first mixture on a substrate, and form a wafer cutting carrier layer after standing. The first mixture includes a first resin material, a photoinitiator, and a fluorine-modified acrylic resin. The weight percentage of the prime modified acrylic resin in the wafer dicing bearing layer is 1 to 5%, and the first resin material includes acrylic resin; Coat a second mixture on the wafer dicing carrier layer, and form an intermediate bonding layer after standing. The second mixture includes a second resin material, a polycyclic resin, an inorganic material, and an intermediate bonding layer Hardener, the second resin material includes at least one of epoxy resin and acrylic resin, the polycyclic resin includes at least one of fluorene ring resin and naphthalene ring resin, and the weight of the inorganic material in the intermediate bonding layer The percentage is 50~80%; A third mixture is coated on the intermediate bonding layer, and a wafer bonding layer is formed after standing. The third mixture includes a third resin material and a wafer bonding hardener, and the third resin material includes a ring At least one of oxygen resin and acrylic resin; and Removing the substrate to obtain a wafer bonding film including the wafer dicing carrier layer, the intermediate bonding layer, and the wafer bonding layer stacked sequentially from bottom to top, Wherein a thickness of the intermediate bonding layer is greater than or equal to a thickness of the wafer bonding layer, the photo-initiator of the wafer dicing carrier layer promotes a reaction of the wafer dicing carrier layer when irradiated with ultraviolet light, and After the reaction, the upper surface of the wafer dicing carrier layer loses its adhesion to the lower surface of the intermediate bonding layer and separates from each other. According to the manufacturing method of the wafer bonding film described in item 6 of the scope of patent application, a glass transition temperature (Tg) of the intermediate bonding layer is between 120°C and 220°C. According to the manufacturing method of the wafer bonding film described in item 6 of the scope of patent application, a thermal expansion coefficient of the intermediate bonding layer is between 20 and 50 ppm/K when the glass transition temperature is lower than that of the intermediate bonding layer. The coefficient of thermal expansion is between 120 and 250 ppm/K above the glass transition temperature, and the inorganic material includes silicon dioxide (SiO ₂ ). According to the manufacturing method of the wafer bonding film described in item 6 of the scope of patent application, the water vapor transmission rate of the wafer bonding layer is lower than 10-15g/m2*day, and the water vapor of the intermediate bonding layer The penetration rate is lower than 10-15g/m2*day. According to the manufacturing method of the wafer bonding film described in item 6 of the scope of patent application, the thickness of the wafer bonding layer and the thickness of the intermediate bonding layer in total are between 5 and 80 μm, and the wafer cutting carrier layer The thickness is between 20 and 50 μm.

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