CN111952166A - Wafer bonding film and manufacturing method thereof - Google Patents

Wafer bonding film and manufacturing method thereof Download PDF

Info

Publication number
CN111952166A
CN111952166A CN201910415032.0A CN201910415032A CN111952166A CN 111952166 A CN111952166 A CN 111952166A CN 201910415032 A CN201910415032 A CN 201910415032A CN 111952166 A CN111952166 A CN 111952166A
Authority
CN
China
Prior art keywords
wafer
layer
bonding layer
resin
intermediate bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910415032.0A
Other languages
Chinese (zh)
Inventor
范家彰
周弘海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ultra Pak Industries Co ltd
Ultra Pak Ind Co Ltd
Original Assignee
Ultra Pak Industries Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultra Pak Industries Co ltd filed Critical Ultra Pak Industries Co ltd
Priority to CN201910415032.0A priority Critical patent/CN111952166A/en
Publication of CN111952166A publication Critical patent/CN111952166A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Abstract

The invention relates to the field of semiconductors, in particular to a wafer bonding film and a manufacturing method thereof. The wafer bonding film of the present invention comprises: the wafer cutting bearing layer, middle tie layer, wafer tie layer to by the middle tie layer attached to the wafer cutting bearing layer, and settle the wafer by the wafer tie layer, and the wafer tie layer has good stickness to the wafer, especially the wafer cutting bearing layer after shining the ultraviolet light can reduce stickness or lose stickness to middle tie layer, therefore the wafer can be fairly firm settling on the wafer tie layer, middle tie layer can break away from the wafer cutting bearing layer very easily simultaneously, conveniently carry out subsequent semiconductor packaging processing procedure, improve whole treatment effeciency and product yield by a wide margin.

Description

Wafer bonding film and manufacturing method thereof
Technical Field
The invention relates to the field of semiconductors, in particular to a wafer bonding film and a manufacturing method thereof.
Background
In a semiconductor process, a wafer after multiple photolithography and etching processes already includes a plurality of dies, and each die includes an electrical circuit, and appropriate dicing is required to separate individual dies for subsequent wire bonding and packaging processes to form commercially available Integrated Circuits (ICs).
In order to cut the wafer to separate individual dies, the wafer is first mounted on a specific carrier film, and the conventional technology often uses a Die Attachment Film (DAF) as the required carrier film. Specifically, the upper surface of the die attach film is used for placing a wafer, and the lower surface of the die attach film is used for attaching to the wafer dicing carrier layer, wherein the upper surface of the die attach film has considerable viscosity to the wafer to stabilize the wafer and prevent the wafer from moving, and the wafer dicing carrier layer loses viscosity to the lower surface of the die attach film after being irradiated with ultraviolet light, so that the die attach film and the wafer dicing carrier layer can be easily separated from each other.
In short, the die attach film must have a strong adhesion to the wafer and a low adhesion to the dicing carrier layer.
In the prior art, the upper and lower interfaces of the die attach film are generally adjusted to a proper degree of attachment property, and then a siloxane coupling agent is added to improve the affinity to the wafer surface. However, the above-mentioned conventional techniques have a disadvantage in that the adhesion to the dicing carrier layer cannot be maintained low at the same time. Therefore, there is a need for a novel wafer bonding film and method for making the same that improves the overall wafer processing efficiency and product yield, thereby solving all of the above-mentioned problems of the prior art.
Disclosure of Invention
The invention mainly aims to provide a wafer bonding film, which comprises a wafer cutting bearing layer, an intermediate bonding layer and a wafer bonding layer which have electrical insulation and are stacked from bottom to top in sequence, wherein the thickness of the intermediate bonding layer is greater than or equal to that of the wafer bonding layer, so that the wafer cutting bearing film can be used for jointing and bearing a jointed wafer, and the subsequent treatment of the wafer is convenient.
Specifically, the dicing carrier layer has electrical insulation, an upper surface and a lower surface, and comprises a first resin material, a photo initiator, and a fluorine modified acrylic resin, wherein the fluorine modified acrylic resin is 1-5% by weight of the dicing carrier layer, and the first resin material comprises an acrylic resin.
The middle joint layer is electrically insulating and has an upper surface and a lower surface, the lower surface of the middle joint layer is attached to the upper surface of the wafer cutting bearing layer, and particularly, the upper surface of the wafer cutting bearing layer has viscosity to the lower surface of the middle joint layer. In addition, the intermediate bonding layer comprises a second resin material, a polycyclic resin, an inorganic material and an intermediate bonding layer hardening agent, wherein the second resin material comprises at least one of epoxy resin and acrylic resin, the polycyclic resin comprises at least one of fluorene ring resin and naphthalene ring resin, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%.
The wafer bonding layer is electrically insulating and has an upper surface and a lower surface, the lower surface of the wafer bonding layer is attached to the upper surface of the middle bonding layer, and the upper surface of the wafer bonding layer has viscosity to the wafer and is used for attaching and placing the wafer. In addition, the wafer bonding layer comprises a third resin material and a wafer bonding hardening agent, wherein the third resin material comprises at least one of epoxy resin and acrylic resin.
And the light initiator of the wafer cutting bearing layer promotes the wafer cutting bearing layer to react when ultraviolet light is irradiated, and after the reaction, the upper surface of the wafer cutting bearing layer loses viscosity to the lower surface of the middle bonding layer and is separated from the middle bonding layer.
Another object of the present invention is to provide a method for manufacturing a wafer bonding film, comprising: coating a first mixture on a substrate, and standing to form a wafer cutting bearing layer, wherein the first mixture comprises a first resin material, a light initiator and fluorine modified acrylic resin, the weight percentage of the fluorine modified acrylic resin in the wafer cutting bearing layer is 1-5%, and the first resin material comprises acrylic resin; coating a second mixture on the wafer cutting bearing layer, and standing to form an intermediate bonding layer, wherein the second mixture comprises a second resin material, a polycyclic resin, an inorganic material and an intermediate bonding layer hardening agent, the second resin material comprises at least one of epoxy resin and acrylic resin, the polycyclic resin comprises at least one of fluorene ring resin and naphthalene ring resin, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%; coating a third mixture on the intermediate bonding layer, and forming a wafer bonding layer after standing, wherein the third mixture comprises a third resin material and a wafer bonding hardening agent, and the third resin material comprises at least one of epoxy resin and acrylic resin; and removing the substrate to obtain a wafer bonding film comprising a wafer dicing bearing layer, an intermediate bonding layer and a wafer bonding layer which are stacked in sequence from bottom to top.
Therefore, the double-layer structure is formed by the middle bonding layer and the wafer bonding layer, the middle bonding layer positioned below the double-layer structure is attached to the wafer cutting bearing layer, the wafer is arranged on the wafer bonding layer positioned above the double-layer structure, particularly, the wafer bonding layer has excellent viscosity to the wafer, and the wafer cutting bearing layer irradiated with ultraviolet light reduces the viscosity or loses the viscosity to the middle bonding layer. Obviously, the wafer can be firmly arranged on the wafer bonding layer, and meanwhile, the middle bonding layer can be easily separated from the wafer cutting bearing layer, so that the subsequent semiconductor packaging processing procedure is conveniently carried out, and the overall processing efficiency and the product yield are greatly improved.
Drawings
FIG. 1 is a schematic view of a wafer bonding film according to a first embodiment of the present invention.
FIG. 2 is a flowchart illustrating a method of fabricating a wafer bonding film according to a second embodiment of the present invention;
FIGS. 3-7 are schematic views illustrating the application of the wafer bonding film of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be provided in conjunction with the drawings and reference numerals to enable those skilled in the art to make and use the invention.
Referring to fig. 1, a wafer bonding film according to a first embodiment of the present invention is shown. As shown in fig. 1, the Wafer bonding film of the present invention includes a dicing carrier layer 10, an intermediate bonding layer 20, and a Wafer bonding layer 30 stacked in sequence from bottom to top and having electrical insulation properties, which can be used to bond and carry a bonded Wafer (Wafer)40, thereby facilitating subsequent dicing and packaging processes.
Specifically, the dicing carrier layer 10 has an upper surface and a lower surface, and comprises a first resin material, a photo initiator, and a fluorine-modified acrylic resin, wherein the first resin material comprises an acrylic resin, and the weight percentage of the fluorine-modified acrylic resin in the entire dicing carrier layer is 1-5%.
The intermediate bonding layer 20 has an upper surface and a lower surface, and includes a second resin material, a polycyclic resin, an inorganic material, and an intermediate bonding layer hardening agent. The lower surface of the intermediate bonding layer 20 is attached to the upper surface of the dicing carrier layer 10, and the upper surface of the dicing carrier layer 10 has adhesiveness to the lower surface of the intermediate bonding layer 20. Further, the second resin material may include at least one of an epoxy resin and an acrylic resin, the polycyclic resin may include at least one of a fluorene ring resin and a naphthalene ring resin, and the inorganic material may include silicon dioxide (SiO)2) And the weight percentage of the intermediate bonding layer 20 is 50-80%.
The thickness of the intermediate bonding layer 20 is specifically designed to be greater than or equal to the thickness of the wafer bonding layer 10, and the glass transition temperature (Tg) of the intermediate bonding layer 20 is between 120 ℃ and 220 ℃. The intermediate bonding layer 20 has a coefficient of thermal expansion of 20 to 50ppm/K at the glass transition temperature or lower, and the intermediate bonding layer 20 has a coefficient of thermal expansion of 120 to 250ppm/K at the glass transition temperature or higher.
Furthermore, the wafer bonding layer 30 has an upper surface and a lower surface, and includes a third resin material and a wafer bonding curing agent. The lower surface of the wafer bonding layer 30 is attached to the upper surface of the intermediate bonding layer 20, and the upper surface of the wafer bonding layer 30 has an adhesive property to the wafer 40 for attaching and placing the wafer 40. Further, the third resin material includes at least one of an epoxy resin and an acrylic resin.
More specifically, the photo initiator of the dicing carrier layer 10 may cause the dicing carrier layer 10 to generate a specific reaction when Ultraviolet (UV) light is irradiated, and after the reaction, the upper surface of the dicing carrier layer 10 may lose adhesion to the lower surface of the intermediate bonding layer 20 and separate from each other. In particular, fluorine modified acrylic resin can be used to modify the surface properties of the dicing tape 10 after a specific reaction, such as increasing the surface tension, so that it can be easily separated from the intermediate bonding layer 20.
The wafer bonding film of the present invention is to firmly bond and position the wafer 40 so as to facilitate the subsequent dicing process of the wafer 40 to form a plurality of dies or chips (chips), and at the same time, the dicing carrier layer 10 is easily separated from the intermediate bonding layer 20 after the irradiation of ultraviolet light, so the moisture permeability of the intermediate bonding layer 20 is especially designed to be less than 10-15g/m2Day, and the water vapor transmission rate of the wafer bonding layer 30 is less than 10-15g/m2Day. In addition, the thickness of the dicing carrier layer 10 is specifically designed to be between 20 and 50 μm for proper mechanical strength, and the thickness of the wafer bonding layer 30 and the thickness of the intermediate bonding layer 20 are 5 to 80 μm in total.
Referring to fig. 2, a flow chart of a method for fabricating a wafer bonding film according to a second embodiment of the present invention is shown. As shown in fig. 2, the method for fabricating a wafer bonding film according to the second embodiment of the present invention includes steps S10, S20, S30, and S40.
First, in step S10, the method of the present invention applies a first mixture on a substrate, such as a glass plate, a plastic plate, or a metal plate, and forms a dicing carrier layer after standing for a predetermined time. The first mixture comprises a first resin material, a light initiator and fluorine modified acrylic resin, wherein the first resin material comprises acrylic resin, and the weight percentage of the fluorine modified acrylic resin in the dicing carrier layer is 1-5%.
Then, step S20 is performed, in which a second mixture is further applied to the dicing carrier layer formed in step S10, and an intermediate bonding layer is formed after standing for a predetermined time. The second mixture comprises a second resin material, a polycyclic resin, an inorganic material and an intermediate bonding layer hardening agent, wherein the second resin material comprises at least one of epoxy resin and acrylic resin, the polycyclic resin comprises at least one of fluorene ring resin and naphthalene ring resin, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%.
In step S30, the third mixture is coated on the intermediate bonding layer one, and the wafer bonding layer is formed after standing for a predetermined time. The third mixture may include a third resin material and a die bonding hardener, wherein the third resin material includes at least one of an epoxy resin and an acrylic resin.
Finally, step S40 is performed to remove the substrate, so as to obtain the wafer bonding film including the wafer dicing carrier layer, the intermediate bonding layer and the wafer bonding layer stacked in sequence from bottom to top, that is, the wafer bonding film itself is a thin film with a three-layer stacked structure.
It is noted that the wafer bonding film manufactured by the manufacturing method of the second embodiment of the present invention has substantially the same characteristics as the wafer bonding film of the first embodiment, and thus the description thereof is omitted.
To further illustrate the features of the wafer bonding film of the present invention, please refer to fig. 3 to 7, which are schematic views of the application of the wafer bonding film of the present invention, and take wafer dicing as an example. As shown in fig. 3, a wafer 40 is first attached to the wafer bonding layer 30 having tackiness in the wafer bonding film of the present invention, thereby being fixed, and further pressed against the wafer bonding layer 30 and near the periphery of the wafer 40 by a ring frame 50. In fig. 4, a wafer 40 is diced by a wafer dicing tool 60 to form a plurality of scribe lines C, for example, using an optical laser or a mechanical dicing blade.
In fig. 5, the dicing carrier 10 is irradiated with the ultraviolet light L, for example, from bottom to top, so that the dicing carrier 10 reacts to greatly reduce the adhesion of the intermediate bonding layer 20, or even lose the adhesion. Next, in fig. 6, a die clamper 70, such as a suction cup, is used to take out the individual dies 41 separated by the scribe line C from bottom to top in the wafer 40, so as to improve the taking-out efficiency of the dies 41, and a die pusher 71 is further used to push the dies 41 from bottom to top toward the lower surface of the dicing carrier layer 10.
In addition, the die 41 may be disposed on the chip carrier 80 and attached to the chip carrier 80 by the intermediate bonding layer 20, i.e., the wafer bonding layer 30 is sandwiched between the intermediate bonding layer 20 and the chip carrier 80, or the dies 41 may be stacked into a multi-layer structure, as shown in fig. 7, and then the multi-layer structure is disposed on the chip carrier 80. At this time, the die 41 is already mounted on the chip carrier 80, and the required wire bonding and packaging processes can be performed to complete the electrical connection and protect the die 41 from the external environment.
In summary, the present invention is characterized in that a double-layer structure is formed by the middle bonding layer and the wafer bonding layer, the middle bonding layer located below the double-layer structure is attached to the dicing carrier layer, and the wafer is placed on the wafer bonding layer located above the double-layer structure, particularly, the wafer bonding layer has excellent adhesion to the wafer, and the dicing carrier layer irradiated with ultraviolet light has reduced adhesion or lost adhesion to the middle bonding layer, so that the wafer can be placed on the wafer bonding layer firmly, and meanwhile, the middle bonding layer can be easily separated from the dicing carrier layer, thereby facilitating the subsequent semiconductor packaging process.
The foregoing is illustrative of the preferred embodiment of the present invention and is not to be construed as limiting thereof, since any modification and variation of the present invention disclosed herein may be made without departing from the spirit and scope of the invention.
[ notation ] to show
10 cutting the bearing layer on the wafer;
20 an intermediate bonding layer;
30 wafer bonding layer;
40 wafers;
41 crystal grains;
50 an annular frame;
60 a wafer cutting tool;
70 chip gripper;
71 a chip pusher;
80 a chip carrier;
c, cutting a channel;
l ultraviolet light;
s10, S20, S30 and S40.

Claims (10)

1. A wafer bonding film comprising:
the wafer cutting bearing layer is electrically insulating, has an upper surface and a lower surface, and comprises a first resin material, a light initiator and fluorine modified acrylic resin, wherein the weight percentage of the fluorine modified acrylic resin in the wafer cutting bearing layer is 1-5%, and the first resin material comprises acrylic resin;
an intermediate bonding layer, which is electrically insulating and has an upper surface and a lower surface, wherein the lower surface of the intermediate bonding layer is attached to the upper surface of the dicing carrier layer, the upper surface of the dicing carrier layer has viscosity to the lower surface of the intermediate bonding layer, the intermediate bonding layer comprises a second resin material, a polycyclic resin, an inorganic material and an intermediate bonding layer hardener, the second resin material comprises at least one of epoxy resin and acrylic resin, the polycyclic resin comprises at least one of fluorene ring resin and naphthalene ring resin, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%; and
the wafer jointing layer is electrically insulated and provided with an upper surface and a lower surface, the lower surface of the wafer jointing layer is attached to the upper surface of the middle jointing layer, the upper surface of the wafer jointing layer has viscosity to a wafer and is used for attaching and placing the wafer, the wafer jointing layer comprises a third resin material and a wafer jointing hardening agent, and the third resin material comprises at least one of epoxy resin and acrylic resin;
the thickness of the middle joint layer is larger than or equal to that of the wafer joint layer, the light initiator of the wafer cutting bearing layer enables the wafer cutting bearing layer to react when ultraviolet light is irradiated, and after the reaction, the upper surface of the wafer cutting bearing layer loses viscosity to the lower surface of the middle joint layer and is separated from the lower surface of the middle joint layer.
2. The wafer bonding film of claim 1, wherein a glass transition temperature of the intermediate bonding layer is between 120 ℃ and 220 ℃.
3. The wafer bonding film of claim 2, wherein the coefficient of thermal expansion of the intermediate bonding layer is between 20 and 50ppm/K below the glass transition temperature and between 120 and 250ppm/K above the glass transition temperature, and wherein the inorganic material comprises silicon dioxide.
4. The wafer bonding film of claim 1, wherein the wafer bonding layer has a moisture transmission rate of less than 10 "15 g/m2Day, and the moisture penetration of the intermediate bonding layer is less than 10-15g/m2Day.
5. The wafer bonding film of claim 1, wherein the thickness of the wafer bonding layer and the thickness of the intermediate bonding layer together are between 5 and 80 μm, and the thickness of the dicing carrier layer is between 20 and 50 μm.
6. A method for fabricating a wafer bonding film comprises:
coating a first mixture on a substrate, and standing to form a wafer cutting bearing layer, wherein the first mixture comprises a first resin material, a light initiator and fluorine modified acrylic resin, the weight percentage of the fluorine modified acrylic resin in the wafer cutting bearing layer is 1-5%, and the first resin material comprises acrylic resin;
coating a second mixture on the wafer cutting bearing layer, and forming an intermediate bonding layer after standing, wherein the second mixture comprises a second resin material, a polycyclic resin, an inorganic material and an intermediate bonding layer hardening agent, the second resin material comprises at least one of epoxy resin and acrylic resin, the polycyclic resin comprises at least one of fluorene ring resin and naphthalene ring resin, and the weight percentage of the inorganic material in the intermediate bonding layer is 50-80%;
coating a third mixture on the intermediate bonding layer, and forming a wafer bonding layer after standing, wherein the third mixture comprises a third resin material and a wafer bonding hardening agent, and the third resin material comprises at least one of epoxy resin and acrylic resin; and
removing the substrate to obtain a wafer bonding film comprising the wafer dicing carrier layer, the intermediate bonding layer and the wafer bonding layer stacked in sequence from bottom to top,
the thickness of the middle joint layer is larger than or equal to that of the wafer joint layer, the light initiator of the wafer cutting bearing layer enables the wafer cutting bearing layer to react when ultraviolet light is irradiated, and after the reaction, the upper surface of the wafer cutting bearing layer loses viscosity to the lower surface of the middle joint layer and is separated from the lower surface of the middle joint layer.
7. The method as claimed in claim 6, wherein the intermediate bonding layer has a glass transition temperature of 120 ℃ to 220 ℃.
8. The method of claim 7, wherein the intermediate bonding layer has a coefficient of thermal expansion of between 20 and 50ppm/K below the glass transition temperature, and a coefficient of thermal expansion of between 120 and 250ppm/K above the glass transition temperature, and wherein the inorganic material comprises silicon dioxide (SiO)2)。
9. The method of claim 6, wherein the wafer bonding layer has a moisture transmission rate of less than 10-15g/m2Day, and the moisture penetration of the intermediate bonding layer is less than 10-15g/m2Day.
10. The method of claim 6, wherein the thickness of the wafer bonding layer and the thickness of the intermediate bonding layer are 5 to 80 μm in total, and the thickness of the dicing carrier layer is 20 to 50 μm.
CN201910415032.0A 2019-05-17 2019-05-17 Wafer bonding film and manufacturing method thereof Pending CN111952166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910415032.0A CN111952166A (en) 2019-05-17 2019-05-17 Wafer bonding film and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910415032.0A CN111952166A (en) 2019-05-17 2019-05-17 Wafer bonding film and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN111952166A true CN111952166A (en) 2020-11-17

Family

ID=73336913

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910415032.0A Pending CN111952166A (en) 2019-05-17 2019-05-17 Wafer bonding film and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN111952166A (en)

Similar Documents

Publication Publication Date Title
US11764177B2 (en) Bonded structure with interconnect structure
KR101176431B1 (en) Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
KR101043836B1 (en) Fabrication method of semiconductor integrated circuit device
JP4719042B2 (en) Manufacturing method of semiconductor device
WO2018216621A1 (en) Semiconductor device manufacturing method and expand tape
KR20140000249A (en) Stacked body and method for detaching stacked body
US10347509B1 (en) Molded cavity fanout package without using a carrier and method of manufacturing the same
US9281182B2 (en) Pre-cut wafer applied underfill film
US10424524B2 (en) Multiple wafers fabrication technique on large carrier with warpage control stiffener
US9362105B2 (en) Pre-cut wafer applied underfill film on dicing tape
WO2020136764A1 (en) Method for manufacturing electronic component package
US7842552B2 (en) Semiconductor chip packages having reduced stress
CN111952166A (en) Wafer bonding film and manufacturing method thereof
TWM587817U (en) Wafer bonding film
TW202044376A (en) Wafer bonding film and manufacturing method capable of facilitating subsequent semiconductor packaging processing process and greatly improving overall processing efficiency and product yield
WO2022118929A1 (en) Method for manufacturing semiconductor device
US20240112956A1 (en) Wafer composite, semiconductor device and methods of manufacturing a semiconductor circuit
TWI827779B (en) Chip-bonding integrated film and method for manufacturing semiconductor device
JP2008187203A (en) Method of manufacturing semiconductor device
JP2006140303A (en) Method for manufacturing semiconductor apparatus
US20190259675A1 (en) Glass frame fan out packaging and method of manufacturing thereof
CN113913122A (en) Production method of heating peelable adhesive tape
TW202230672A (en) Method for manufacturing semiconductor device
CN115692220A (en) Chip mounting process and structure
JP2005268552A (en) Semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination