TW202044339A - 反射型光罩基底、反射型光罩及其製造方法、以及半導體裝置之製造方法 - Google Patents

反射型光罩基底、反射型光罩及其製造方法、以及半導體裝置之製造方法 Download PDF

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Publication number
TW202044339A
TW202044339A TW109107948A TW109107948A TW202044339A TW 202044339 A TW202044339 A TW 202044339A TW 109107948 A TW109107948 A TW 109107948A TW 109107948 A TW109107948 A TW 109107948A TW 202044339 A TW202044339 A TW 202044339A
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TW
Taiwan
Prior art keywords
film
absorber
reflective
reflective photomask
substrate
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Application number
TW109107948A
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English (en)
Chinese (zh)
Inventor
片岡瑞生
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日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202044339A publication Critical patent/TW202044339A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW109107948A 2019-03-13 2020-03-11 反射型光罩基底、反射型光罩及其製造方法、以及半導體裝置之製造方法 TW202044339A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-046108 2019-03-13
JP2019046108 2019-03-13

Publications (1)

Publication Number Publication Date
TW202044339A true TW202044339A (zh) 2020-12-01

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Family Applications (1)

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TW109107948A TW202044339A (zh) 2019-03-13 2020-03-11 反射型光罩基底、反射型光罩及其製造方法、以及半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US20220091498A1 (https=)
JP (1) JPWO2020184473A1 (https=)
KR (1) KR20210134605A (https=)
SG (1) SG11202107980SA (https=)
TW (1) TW202044339A (https=)
WO (1) WO2020184473A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
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TWI853621B (zh) * 2022-07-05 2024-08-21 日商Ａｇｃ股份有限公司 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法、及反射型光罩之製造方法
TWI855751B (zh) * 2022-07-05 2024-09-11 日商Ａｇｃ股份有限公司 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法、及反射型光罩之製造方法
TWI856458B (zh) * 2021-12-31 2024-09-21 南韓商Ｓｋ恩普士股份有限公司 空白罩幕、使用其的光罩以及半導體裝置的製造方法
TWI856588B (zh) * 2022-04-01 2024-09-21 日商Ａｇｃ股份有限公司 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法
TWI903182B (zh) * 2021-11-25 2025-11-01 日商Ｈｏｙａ股份有限公司 光罩基底、轉印用光罩、光罩基底之製造方法、轉印用光罩之製造方法、及顯示裝置之製造方法

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CN113238455B (zh) 2020-05-22 2024-12-20 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
US11829062B2 (en) * 2020-05-22 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
JP6966013B1 (ja) * 2020-10-14 2021-11-10 凸版印刷株式会社 反射型マスク及び反射型マスクの製造方法
KR102660636B1 (ko) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
JP2024142177A (ja) * 2023-03-29 2024-10-10 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに反射型マスク及び半導体装置の製造方法
TWI880298B (zh) * 2023-04-03 2025-04-11 韓商Ｓ＆Ｓ技術股份有限公司 具有吸收膜之用於ｅｕｖ微影的空白遮罩及使用其製造的光遮罩
JP7681153B1 (ja) 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法

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JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
WO2006030627A1 (ja) * 2004-09-17 2006-03-23 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランクスおよびその製造方法
JP4926523B2 (ja) * 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP5194888B2 (ja) 2007-09-27 2013-05-08 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法並びに半導体素子の製造方法
JP5332741B2 (ja) * 2008-09-25 2013-11-06 凸版印刷株式会社 反射型フォトマスク
JP6223756B2 (ja) * 2013-09-10 2017-11-01 Hoya株式会社 多層反射膜付き基板、ｅｕｖリソグラフィー用反射型マスクブランク、ｅｕｖリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法
TWI774375B (zh) * 2016-07-27 2022-08-11 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR102666821B1 (ko) * 2017-07-05 2024-05-16 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
JP6863169B2 (ja) * 2017-08-15 2021-04-21 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
JP6965833B2 (ja) * 2017-09-21 2021-11-10 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法
JP7263908B2 (ja) * 2018-06-13 2023-04-25 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク及び反射型マスクブランクの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI903182B (zh) * 2021-11-25 2025-11-01 日商Ｈｏｙａ股份有限公司 光罩基底、轉印用光罩、光罩基底之製造方法、轉印用光罩之製造方法、及顯示裝置之製造方法
TWI856458B (zh) * 2021-12-31 2024-09-21 南韓商Ｓｋ恩普士股份有限公司 空白罩幕、使用其的光罩以及半導體裝置的製造方法
TWI856588B (zh) * 2022-04-01 2024-09-21 日商Ａｇｃ股份有限公司 反射型遮罩基底、反射型遮罩、反射型遮罩基底之製造方法、及反射型遮罩之製造方法
TWI853621B (zh) * 2022-07-05 2024-08-21 日商Ａｇｃ股份有限公司 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法、及反射型光罩之製造方法
TWI855751B (zh) * 2022-07-05 2024-09-11 日商Ａｇｃ股份有限公司 反射型光罩基底、反射型光罩、反射型光罩基底之製造方法、及反射型光罩之製造方法

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Publication number Publication date
US20220091498A1 (en) 2022-03-24
JPWO2020184473A1 (https=) 2020-09-17
SG11202107980SA (en) 2021-09-29
WO2020184473A1 (ja) 2020-09-17
KR20210134605A (ko) 2021-11-10

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