TW202041978A - Exposure apparatus, manufacturing method of flat panel display, device manufacturing method, and exposure method - Google Patents

Abstract

This liquid crystal exposure device (10) which performs scanning exposure by irradiating a substrate (P) with illuminating light (IL) via a projection optical system (30), and driving the projection optical system (PL) relative to the substrate (P), is equipped with alignment microscopes (60) which perform mark detection of marks (Mk) provided on a substrate (P), a first drive system that drives the alignment microscopes (60), a second drive system that drives the projection optical system (PL), and a control device that controls the first and second drive systems in such a manner that the alignment microscopes (60) are driven before the projection optical system (PL) is driven. As a result of this configuration it is possible to minimize tact time required for exposure.

Description

Exposure device, manufacturing method of flat panel display, device manufacturing method, and exposure method

The present invention relates to an exposure device, a method for manufacturing a flat panel display, a method for manufacturing a device, and an exposure method. In detail, it relates to the formation of a predetermined pattern on the object by scanning the object with an energy beam in a predetermined scanning direction. The exposure device and method, and the manufacturing method of the flat panel display or device including the aforementioned exposure device or method.

For a long time, the lithography process for manufacturing electronic components (microcomponents) such as liquid crystal display components and semiconductor components (integrated circuits, etc.) has used an exposure device that uses an energy beam to form the mask or reticle ( Hereinafter, the pattern collectively referred to as "mask") is transferred to a glass plate or wafer (hereinafter, collectively referred to as "substrate").

As this type of exposure device, there is known a line beam scanning type that scans the exposure illumination light (energy beam) in a predetermined scanning direction in a state where the photomask and the substrate are substantially stationary, thereby forming a predetermined pattern on the substrate. Scanning exposure device (for example, refer to Patent Document 1).

The exposure device described in the above-mentioned Patent Document 1 is to correct the positional error between the exposure target area on the substrate and the photomask by moving the projection optical system in a direction opposite to the scanning direction during exposure, while passing through the projection optical system for alignment The quasi-microscope measures the marks on the substrate and the mask (alignment measurement), and corrects the position error of the substrate and the mask based on the measurement results. Here, since the alignment mark on the substrate is measured through the projection optical system, the alignment action and the exposure action are performed sequentially. It is very important to suppress the processing time (production time) required for the exposure processing of all substrates. difficult. Advanced technical literature

[Patent Document 1] Japanese Patent Application Publication No. 2000-12422

Means to solve the problem

The present invention is completed under the above circumstances. The exposure device of the first aspect irradiates an object with illumination light through a projection optical system, and drives the projection optical system with respect to the object to perform scanning exposure, and includes: a mark detection unit for performing Mark detection of a mark provided on the object; a first drive system that drives the mark detection part; a second drive system that drives the projection optical system; and a control device that is performed before the drive of the projection optical system The driving mode of the mark detection unit controls the first and second driving systems.

The method for manufacturing a flat panel display according to the second aspect of the present invention includes the operation of exposing the object using the exposure device of the present invention and the operation of developing the object after exposure.

The device manufacturing method of the third aspect of the present invention includes the operation of exposing the object using the exposure device of the present invention and the operation of developing the object after exposure.

The exposure method of the fourth aspect of the present invention is to irradiate an object with illumination light through a projection optical system, and drive the projection optical system with respect to the object to perform scanning exposure, which includes: using a mark detection unit to perform a mark on the object Mark detection; drive of the mark detection unit using the first drive system; drive of the projection optical system using the second drive system; and drive the mark detection unit before driving the projection optical system Control of the first and second drive systems.

The manufacturing method of the flat panel display according to the fifth aspect of the present invention includes the operation of exposing the object using the exposure method of the present invention and the operation of developing the object after exposure.

The device manufacturing method of the sixth aspect of the present invention includes the operation of exposing the object using the exposure method of the present invention and the operation of developing the object after exposure.

"First Embodiment" Hereinafter, the first embodiment will be described using FIGS. 1 to 7(c).

Fig. 1 shows a conceptual diagram of the liquid crystal exposure apparatus 10 of the first embodiment. The liquid crystal exposure device 10 uses, for example, a rectangular (square) glass substrate P (hereinafter, simply referred to as substrate P) used in liquid crystal display devices (flat-panel displays) as the exposure target. The projection exposure device, the so-called scanner.

The liquid crystal exposure apparatus 10 has an illumination system 20 that irradiates illumination light IL as an energy beam for exposure, and a projection optical system 40. Hereinafter, the direction parallel to the optical axis of the illumination light IL irradiated on the substrate P from the illumination system 20 through the projection optical system 40 is referred to as the Z-axis direction, and is set to the X-axis orthogonal to each other in a plane orthogonal to the Z-axis And Y axis for illustration. Furthermore, in the coordinate system of this embodiment, the Y-axis system is substantially parallel to the direction of gravity. Therefore, the XZ plane is substantially parallel to the horizontal plane. In addition, the direction of rotation (tilt) around the Z axis will be described as the θz direction.

Here, in the present embodiment, a plurality of exposure target areas (referred to as a division area or shot area as appropriate) are set on one substrate P, and a photomask is sequentially transferred to these plural shot areas pattern. In addition, although the present embodiment is described for a case where four divided areas are set on the substrate P (a so-called case of taking four sides), the number of divided areas is not limited to this and can be changed appropriately.

In addition, in the liquid crystal exposure device 10, although the so-called step-and-scan exposure operation is performed, during the scanning exposure operation, the mask M and the substrate P are substantially stationary, and the illumination system 20 and the projection optical system 40 (illumination The light IL) moves with a long stroke in the X-axis direction (appropriately called the scanning direction) relative to the mask M and the substrate P (refer to the white arrow in FIG. 1). On the other hand, during the stepping operation to change the area of the exposure target, the mask M is moved stepwise with a predetermined stroke in the X-axis direction, and the substrate P is stepped with a predetermined stroke in the Y-axis direction (refer to the figure respectively) 1 black arrow).

FIG. 2 shows a block diagram of the input/output relationship of the main control device 90 that controls the components of the liquid crystal exposure device 10 in an integrated manner. As shown in FIG. 2, the liquid crystal exposure apparatus 10 includes an illumination system 20, a mask stage device 30, a projection optical system 40, a substrate stage device 50, an alignment system 60, and the like.

The lighting system 20 includes a lighting system main body 22 including a light source (for example, a mercury lamp) and the like of the illuminating light IL (see FIG. 1). During the scanning exposure operation, the main control device 90 controls, for example, the drive system 24 including a linear motor, so that the illumination system body 22 is scanned and driven in the X-axis direction with a predetermined long stroke. The main control device 90 obtains the position information of the lighting system main body 22 in the X-axis direction through the measurement system 26 including, for example, a linear encoder, and performs position control of the lighting system main body 22 based on the position information. In this embodiment, as the illumination light IL, for example, g-line, h-line, i-line, etc. are used.

The mask stage device 30 includes a stage body 32 that holds the mask M. The stage main body 32 can be moved in appropriate steps in the X-axis direction and the Y-axis direction by a drive system 34 including a linear motor, for example. When the X-axis direction is a stepping action for changing the divided area of the exposure object, the main control device 90 controls the drive system 34 to step-drive the stage body 32 in the X-axis direction. Furthermore, as will be described later, when the Y-axis direction is to change the area (position) for scanning exposure in the area (position) of the exposure target, the main control device 90 controls the drive system 34 to move the stage body 32 steps Advance drive in the Y-axis direction. The drive system 34 can drive the mask M in the 3-degree-of-freedom (X, Y, θz) direction in the XY plane in an appropriate micro-width during the alignment operation described later. The position information of the mask M is obtained by, for example, a measurement system 36 including a linear encoder.

The projection optical system 40 includes a projection system main body 42 including an optical system in which an upright image of a mask pattern is formed on a substrate P (see FIG. 1) in an equal magnification system. The projection system main body 42 is arranged in a space formed between the substrate P and the mask M (refer to FIG. 1). During the scanning exposure operation, the main control device 90 controls the drive system 44 including a linear motor to drive the projection system body 42 in the X axis direction with a predetermined long stroke in synchronization with the illumination system body 22, for example. The main control device 90 obtains the position information of the projection system body 42 in the X-axis direction through a measurement system 46 including a linear encoder, for example, and performs position control of the projection system body 42 based on the position information.

Returning to FIG. 1, in the liquid crystal exposure device 10, when the illumination area IAM on the mask M is illuminated with the illumination light IL from the illumination system 20, the illumination light IL passing through the mask M is used to illuminate the illumination area through the projection optical system 40 The projection image of the mask pattern in the area IAM (part of the erect image) is formed on the substrate P and the illumination area (exposure area IA) of the illumination light IL conjugated with the illumination area IAM. And relative to the mask M and the substrate P, the illuminating light IL (illumination area IAM and exposure area IA) is relatively moved in the scanning direction to perform scanning exposure. That is, in the liquid crystal exposure device 10, the pattern of the mask M is generated on the substrate P by the illumination system 20 and the projection optical system 40, and the sensing layer (resist layer) on the substrate P is exposed by the illumination light IL, This pattern is formed on the substrate P.

Here, in this embodiment, the illumination area IAM generated on the mask M by the illumination system 20 includes a pair of rectangular areas separated in the Y-axis direction. The length in the Y-axis direction of a rectangular area is set to, for example, 1/4 of the length in the Y-axis direction of the pattern surface of the mask M (that is, the length in the Y-axis direction of each partitioned area set on the substrate P). In addition, the interval between a pair of rectangular regions is similarly set to, for example, 1/4 of the length of the pattern surface of the mask M in the Y-axis direction. Therefore, the exposure area IA generated on the substrate P also includes a pair of rectangular areas separated in the Y-axis direction. In this embodiment, in order to completely transfer the pattern of the mask M to the substrate P, although it is necessary to perform a secondary scanning exposure operation for a divided area, it has the advantage that the illumination system main body 22 and the projection system main body 42 can be miniaturized. Specific examples of scanning exposure operations will be described later.

The substrate stage device 50 has a stage body 52 holding the back surface (the surface opposite to the exposure surface) of the substrate P. Returning to FIG. 2, when changing the stepping action of the area of the exposure target in the Y-axis direction, the main control device 90 controls the drive system 54 including a linear motor to drive the stage body 52 in the Y-axis direction. . The driving system 54 can slightly drive the substrate P in the direction of 3 degrees of freedom (X, Y, θz) in the XY plane during the substrate alignment operation described later. The position information of the substrate P (the stage body 52) is obtained by, for example, a measurement system 56 including a linear encoder.

Returning to FIG. 1, the alignment system 60 includes, for example, two alignment microscopes 62 and 64. The alignment microscopes 62 and 64 are arranged in the space formed between the substrate P and the mask M (the position between the substrate P and the mask M in the Z-axis direction) to detect the alignment mark Mk ( Hereinafter, only the mark Mk) and the mark (not shown) formed on the mask M are referred to. In the present embodiment, one mark Mk is formed near the four corners of each divided area (one divided area, for example, four). The mark of the mask M is formed on the corresponding mark Mk through the projection optical system 40 position. In addition, the number and positions of the marks Mk and the marks of the mask M are not limited to these, and can be changed appropriately. In addition, in each drawing, for ease of understanding, the mark Mk is displayed larger than it actually is.

One of the alignment microscopes 62 is arranged on the +X side of the projection system main body 42, and the other alignment microscope 64 is arranged on the -X side of the projection system main body 42. The alignment microscopes 62 and 64 respectively have a pair of detection fields (detection areas) separated in the Y-axis direction, and can simultaneously detect, for example, two marks Mk separated in the Y-axis direction in a divided area.

In addition, the alignment microscopes 62 and 64 can simultaneously detect the mark formed on the mask M and the mark Mk formed on the substrate P (in other words, without changing the positions of the alignment microscopes 62 and 64). The main control device 90 obtains the relative positional deviation between the mark formed on the mask M and the mark Mk formed on the substrate P every time the mask M performs the X stepping operation or the substrate P performs the Y stepping operation. Information, and perform the relative positioning of the substrate P and the mask M in the direction along the XY plane to correct the position offset (cancel or reduce). In addition, the alignment microscopes 62 and 64 are integrally composed of a mask detection unit that detects (observes) the mark of the mask M, and a substrate detection unit that detects (observes) the mark Mk of the substrate P by a common box. It is driven by the drive train 66 through the common box. Alternatively, the photomask detection unit and the substrate detection unit may be composed of separate boxes, etc. In this case, it is preferable to be configured such that, for example, the photomask detection unit and the substrate detection unit can be substantially identical to each other by a substantially common drive system 66. Moving the mask M according to the operating characteristics.

The main control device 90 (refer to FIG. 2) controls the drive system 66 including a linear motor to independently drive the alignment microscopes 62 and 64 in the X-axis direction with a predetermined long stroke. In addition, the main control device 90 obtains position information in the X-axis direction of each of the alignment microscopes 62 and 64 through a measurement system 68 including a linear encoder, etc., and independently performs the alignment of the alignment microscopes 62 and 64 based on the position information. Position control. In addition, the projection system main body 42 and the alignment microscopes 62 and 64 have almost the same positions in the Y-axis direction, and their movable ranges partially overlap with each other.

Here, although the alignment microscopes 62 and 64 of the alignment system 60 and the projection system body 42 of the projection optical system 40 are physically (mechanically) independent (separated) elements, they are controlled by the main control device 90 (refer to FIG. 2) The drive (speed and position) is controlled independently of each other, but the drive system 66 that drives the alignment microscopes 62 and 64 and the drive system 44 that drives the projection system body 42 share a linear motor, A part of the linear guide, etc., is substantially equivalent to the driving characteristics of the alignment microscopes 62, 64 and the projection system main body 42, or the control characteristics of the main control device 90.

To give a specific example, for example, when the alignment microscopes 62, 64 and the projection system main body 42 are driven in the X-axis direction by a moving coil linear motor, the drive system 66 and the drive system 44 share a fixed magnetic Body (such as permanent magnet, etc.) unit. In contrast, the movable sub-coil units are aligned with the microscopes 62 and 64, and the projection system main body 42 is independently provided. The main control device 90 (refer to FIG. 2) individually supplies power to the coil unit, and independently controls the The drive of the quasi-microscopes 62 and 64 in the X-axis direction (speed, and position), and the drive of the projection system body 42 in the X-axis direction (speed, and position). Therefore, the main control device 90 can change (arbitrarily change) the interval (distance) between the alignment microscopes 62 and 64 and the projection system main body 42 in the X-axis direction. In addition, the main control device 90 may also move the alignment microscopes 62 and 64 and the projection system main body 42 at different speeds in the X-axis direction.

The main control device 90 (refer to FIG. 2) uses the alignment microscope 62 (or the alignment microscope 64) to detect a plurality of marks Mk formed on the substrate P, and based on the detection result (position information of the plurality of marks Mk), it is known Full wafer enhanced alignment (EGA) method calculates the arrangement information (including information related to the position (coordinate value), shape, etc.) of the partition area where the mark Mk of the inspection object is formed.

Specifically, in the scanning exposure operation, when the projection system main body 42 is driven in the +X direction, the main control device 90 (refer to FIG. 2) uses the +X provided in the projection system main body 42 before the scanning exposure operation. The alignment microscope 62 on the side performs position detection of a plurality of marks Mk to calculate the arrangement information of the divided areas of the exposure object. In the scanning exposure operation, when the projection system main body 42 is driven in the -X direction, before the scanning exposure operation, a plurality of markings are performed using the alignment microscope 64 arranged on the -X side of the projection system main body 42 The position detection of Mk is used to calculate the arrangement information of the area of the exposed object. Based on the calculated arrangement information, the main control device 90 performs precise positioning (substrate alignment action) in the 3-degree-of-freedom direction in the XY plane of the substrate P while appropriately controlling the illumination system 20 and the projection optical system 40 to partition the object Scanning exposure of the area (transfer of mask pattern).

Next, the measurement system 46 (refer to FIG. 2) used to obtain the position information of the projection system main body 42 of the projection optical system 40 and the measurement used to obtain the position information of the alignment microscope 62 of the alignment system 60 will be described. It is the specific composition of 68.

As shown in FIG. 3, the liquid crystal exposure apparatus 10 has a guide 80 for guiding the projection system main body 42 in the scanning direction. The guide 80 is composed of a member extending parallel to the scanning direction. The guide 80 also has the function of guiding the alignment microscope 62 to move in the scanning direction. In addition, in FIG. 7, although the guide 80 is shown between the mask M and the substrate P, in fact, the guide 80 is arranged in the Y-axis direction at a position avoiding the optical path of the illumination light IL.

The guide 80 is fixed with a scale 82 including at least a reflection type diffraction grating whose periodic direction is a direction parallel to the scanning direction (X-axis direction). In addition, the projection system main body 42 has a reading head 84 arranged opposite to the scale 82. In the present embodiment, an encoder system of the measuring system 46 (refer to FIG. 2) for obtaining the position information of the projection system main body 42 is formed by the above-mentioned scale 82 and the reading head 84. In addition, the alignment microscopes 62 and 64 each have a reading head 86 arranged opposite to the scale 82 (in FIG. 3, the alignment microscope 64 is not shown). In this embodiment, an encoder system is formed of the measurement system 68 (refer to FIG. 2) for obtaining the position information of the alignment microscopes 62 and 64 by the above-mentioned scale 82 and the reading head 86. Here, the reading heads 84 and 86 can respectively irradiate the encoder measuring light beam to the scale 82, receive the light beam transmitted through the scale 82 (reflected light beam on the scale 82), and output relative position information to the scale 82 according to the received light result.

As described above, in this embodiment, the scale 82 constitutes the measurement system 46 (refer to FIG. 2) for obtaining the position information of the projection system main body 42 and also constitutes the measurement system 46 for obtaining the position information of the alignment microscopes 62 and 64. Measurement system 68 (refer to Figure 2). That is, the projection system main body 42 and the alignment microscopes 62 and 64 perform position control based on the common coordinate system (length measurement axis) set by the diffraction grating formed on the scale 82. In addition, the driving system 44 (refer to FIG. 2) for driving the projection system main body 42 and the driving system 66 (refer to FIG. 2) for driving the alignment microscopes 62 and 64 may be partially shared or completely independent. Element composition.

In addition, the encoder system constituting the aforementioned measurement systems 46 and 68 may be a linear (1DOF) encoder system whose length measurement axis is only in the X-axis direction (scanning direction), or may have a plurality of length measurement axes. For example, by arranging a plurality of reading heads 84 and 86 at predetermined intervals in the Y-axis direction, the amount of rotation in the θz direction of the projection system main body 42 and the alignment microscopes 62 and 64 can be obtained. In addition, it is also possible to form an XY 2-dimensional diffraction grating on the scale 82, and a 3DOF encoder system with a length measuring axis in the X, Y, and θz directions of 3 degrees of freedom. Furthermore, a plurality of well-known two-dimensional reading heads that can measure length in the direction orthogonal to the scale plane in addition to the periodic direction of the diffraction grating can also be used as the reading heads 84 and 86 to obtain the projection system body 42 , Align the position information of the 6-DOF direction of the microscope 62 and 64.

Next, an example of the operation of the liquid crystal exposure device 10 during the scanning exposure operation will be described using FIGS. 4(a) to 7(c). The following exposure operations (including alignment measurement operations) are performed under the management of the main control device 90 (not shown in FIGS. 4(a) to 7(c). Refer to FIG. 2).

In this embodiment, the first divided area in the exposure sequence (hereinafter referred to as the first irradiation area S ₁ ) is set on the -X side and -Y side of the substrate P. In addition, the symbols S ₂ to S ₄ assigned to the divided areas on the substrate P respectively represent the second to fourth irradiation areas in the order of exposure.

FIG. 4 (a), the exposure prior to the start, the alignment projection system and the microscope body 42 of each 62, arranged at the initial position based on a plan view is set to the first irradiation region of _a side of the S -X. At this time, the projection system main body 42 and the alignment microscopes 62 and 64 are arranged close to each other in the X-axis direction. In addition, the Y-axis position of the detection field of view of the alignment microscope 62 is almost identical to the Y-axis position of the mark Mk formed in the first and fourth irradiation regions S ₁ and S ₄ .

Next, the main control unit 90, FIG. 4 (b), the alignment microscope 62 is driven in the + X direction, detecting the formation of the -X side end of the first region S ₁ of the 4 markers e.g. Mk formed in For example, there are two marks Mk near the part (refer to the thick circle mark in Figure 4(b). The same applies below). Further, the main control unit 90, FIG. 4 (c), the alignment microscope 62 is further driven in the + X direction, formed in the first detecting region S ₁ of the 4 markers e.g. Mk formed on the + X side For example, there are two marks Mk near the end. And, FIG. 4 (b), the projection system main body 42, although the system is stopped, it can be started within the detectable label Mk first irradiation region S ₁ in the alignment microscope 62, the mark being detected in the Mk, For example, during the period during which the mark Mk on the -X side is detected and moved to the mark Mk on the +X side (specifically, just before the mark Mk on the +X side is detected), the acceleration of the projection system main body 42 is started.

Main control unit 90, based on the detection of e.g. 4 Mk marks formed in the first irradiation region S ₁ of the result (position information) to determine the arrangement of the first region S ₁ information. Main control unit 90, FIG. 4 (d) illustrated, while precision positioning (alignment operation of the substrate) 3 degrees of freedom within the XY plane of the substrate P based on the first region S ₁ of the arrangement of the information, while the lighting system body projection system main body 42 of the illumination system 20 of the (not shown in FIG. 4 (d). Referring to FIG. 1) 22 driven in synchronism in the + X direction, for the first irradiation region S scanning exposure to ₁ the first time the .

Further, the main control unit 90, and to the start of the irradiation region ₁ of a first scan exposure operation of S in parallel, using the alignment microscope 62 detecting the formation of the ₄ (the first irradiation area + X side S ₁ of 4 irradiation region S For example, among the four marks Mk in the division area), two marks Mk are formed near the end on the -X side.

Main control unit 90, for example two marks Mk detection result, the irradiation region acquired prior to the first ₁ S 1 (stored in the memory device not shown) in accordance with the fourth irradiation area S ₄ of the new acquisition of For example, the detection results of 4 marks are calculated by EGA to update the arrangement information of the first irradiation area S ₁ . Main control unit 90, based on this side can be precisely positioned appropriately 3 degrees of freedom within the XY plane of the substrate P by the alignment of the updated information, while the first irradiation region continuation line S of the scanning exposure operation _1. To obtain a first arrangement of the irradiation region S ₁ mark position information is used within the fourth region S ₄ information, and only be provided in accordance with the irradiation of the first region S ₁ are arranged four markers Mk obtained information comparison, It is possible to obtain the arrangement information considering the statistical tendency in a wide range, which can improve the alignment accuracy of the first irradiation area S ₁ .

In addition, the main control device 90, as shown in FIG. 5(a), drives the projection system main body 42 in the +X direction to perform scanning exposure, and further drives the alignment microscope 62 in the +X direction to detect the formation in the fourth irradiation S ₄ within the region, for example, 4 marks Mk formed in the vicinity of the + X side end portion of Mk, for example, two marks. Main control unit 90, may be a detection result according to the fourth irradiation area of a new acquisition of S ₄ of, for example, two marks Mk, the mark Mk Obtaining previously (in this example, the Department of the irradiation area in the S ₁ 1 of example 4 Mk numerals, and the fourth irradiation area S ₄ of e.g. two marks Mk) of the detection result EGA calculation, to update the arrangement of the first region S ₁ information. Main control unit 90 can be performed while precise alignment based on this 3 degrees of freedom within the XY plane of the substrate P by the alignment information updates, while line 1 continued scanning the irradiation region S ₁ exposure operation.

As described above, in this embodiment, the alignment microscope 62 that is arranged in front of the scanning direction (+X direction) relative to the projection system main body 42 can be used, and at the same time (in parallel) the detection is performed on the more exposed area IA (illumination light IL) formed in the scanning At least a part of the movement of the mark Mk in the forward direction (+X direction) and the scanning exposure operation of scanning the projection system main body 42 in the +X direction. In this way, the time required for a series of actions including the alignment action and the scanning exposure action can be shortened. In addition, the main control device 90 can appropriately perform EGA calculations each time the marks Mk set at different positions are sequentially measured, so as to update the arrangement information of the divided areas of the exposure object. Accordingly, it is possible to improve the alignment accuracy of the divided areas of the exposure object.

In addition, when the main control device 90 drives the projection system main body 42 in the +X direction for scanning exposure, it can arrange the alignment microscope 64 behind the projection system main body 42 in the scanning direction (−X direction) to follow Drive in the +X direction in the manner of the projection system main body 42 (refer to Fig. 5(a) and Fig. 5(b)). At this time, the main control device 90 can use the alignment microscope 64 to detect the mark Mk formed behind the scanning direction (−X direction) of the exposure area IA (illumination light IL), and use the detection result for the EGA calculation.

As described above, in this embodiment, the illumination area IAM (refer to FIG. 1) generated on the mask M and the exposure area IA generated on the substrate P are separated in the Y-axis direction as a pair of rectangular areas, so The pattern image transferred to the mask M of the substrate P by one scanning exposure action is formed in a pair of strip-shaped regions (half area of the full area of a divided area) separated in the Y-axis direction and extending in the X-axis direction.

Next, the main control unit 90, FIG. 5 (b), the first irradiation region to perform the S ₁ 2nd (backward path) scan exposure operation, the mask M and the substrate P in the -Y direction of the stepping movement ( Refer to the black arrow in Figure 5(b)). The step movement amount of the substrate P at this time is, for example, a length of 1/4 of the length of a divided area in the Y-axis direction. At this time, in the step movement of the substrate P and the mask M in the -Y direction, it is better to be able to maintain the relative positional relationship between the substrate P and the mask M (or, to correct the relative positional relationship The way) to make the step movement better.

In this embodiment, the first irradiation region S 2 of the scanning exposure operation _1, FIG. 5 (c), the Department of the projection system main body 42 to be moved in the -X direction. Main control unit 90, the alignment microscope 64 is driven in the -X direction to form in the first detection region S of e.g. ₁ + X side end portion in the vicinity of the marker Mk (not shown). Main control unit 90, while the arrangement according to this detection result of the alignment microscope 64 and the irradiation of the first region S ₁ of the precise positioning information of the 3 degrees of freedom within the XY plane of the substrate P, while for the first irradiation region S ₁ The second scanning exposure action. Accordingly, as shown in FIG. 5(d), the mask pattern transferred by the first scanning exposure action and the mask pattern transferred by the second scanning exposure action are in the first irradiation area S ₁ In internal bonding, the entire pattern of the mask M is transferred to the first irradiation area S ₁ . In addition, the alignment operation of the second scanning exposure corresponding to the first shot area S ₁ only needs to be measured in the XY plane based on the mark of the mask M and the mark Mk of the substrate P each of two points (+X side mark) The position deviation of the 3 degrees of freedom (X, Y, θz) direction, so compared with the first alignment action, can substantially shorten the time required for alignment.

When the scanning exposure of the first shot area S ₁ is finished, the main control device 90 performs the scanning exposure operation of the second shot area S ₂ (the division area on the +Y side of the first shot area S ₁ ) to make the substrate After P moves step by step in the -Y direction, the scanning exposure of the second irradiation area S ₂ is performed in the same procedure as the scanning exposure operation of the first irradiation area S ₁ described above.

That is, the second region S of the first scan of exposure operation _2, FIG. 6 (a), the lines _2, 3 and the second irradiation area S to align the microscope according to the second irradiation region 62 is detected within ₃ S (Division area on the +X side of the second irradiated area S ₂ ) The detection result of the mark Mk in the second irradiated area S ₂ is obtained. The arrangement information of the second irradiated area S ₂ is obtained. Based on the arrangement information, the 3-degree-of-freedom direction in the XY plane of the substrate P Precise positioning. Wherein the marker Mk within the irradiation area S ₃ of the third detection operation (alignment and updating the information) and irradiation of the second region S ₂ of the scanning exposure operation is at least partly in parallel. In addition, the main control device 90, after stepping the substrate P and the mask M in the -Y direction, uses the alignment microscope 64 to detect, for example, the mark Mk (formed in the second irradiation area S ₂ near the +X side end). Not shown). Main control unit 90, while the alignment microscope 64 based on this result and the second region S ₂ of the information are arranged for precise positioning of the 3 degrees of freedom within the XY plane of the substrate P, while FIG. 6 (b) shown in FIG. , While moving the projection system main body 42 in the -X direction, the second scanning exposure operation for the second irradiation area S ₂ is performed.

When the second region S ₂ of the end of the scanning exposure, the main control unit 90, by making the mask M (see FIG. 1) toward the + X direction stepping movement, so that the irradiation of the third mask M and the substrate P Area S _{3 is} opposite. Main control unit 90 to the microscope 62 detects the alignment mark Mk -X formed, for example within the irradiation area S ₃ of the third portion in the vicinity of the side end. Main control unit 90, in this state, as shown in FIG 6 (c), the main body 42 while the projection system moves toward the + X direction, while scanning exposure operation on the third irradiation area S ₃ of the first times. At this time, the aligning (precision positioning substrate P) control, depending on the irradiation system ₃ of the third area S and the arrangement information of the alignment microscope 62 for the detection result. The third irradiation area S ₃ of the arrangement of the obtained information system ₂ according to the first exposure shot area S irradiated with the second and third region S _2, S ₃ position marker within the Mk be calculated, the alignment microscope 62 , only 3 according to the first irradiation region on the mask M and S ₃ each mark to mark marked Mk photomask M is disposed under the state of the substrate P and the two points, measuring the degree of freedom in the XY plane 3 ( X, Y, θz) direction position deviation. Therefore, compared with the first alignment shot areas S ₂ of 2, can shorten the time required essence of the third region S ₃ of the alignment.

Thereafter, the main control unit 90, to perform a third irradiation area S ₃ of the second scanning exposure operation, in FIG. 7 (a), the mask M and the substrate P in the + Y direction of the stepping movement. Accordingly, the position of the inspection field of view of the alignment microscope 64 in the Y-axis direction is almost the same as the position of the mark Mk formed in the second and third irradiation regions S ₂ and S ₃ in the Y-axis direction.

The main control device 90 uses the same procedure as the first scanning exposure operation for the first shot area S ₁ described above (except that the alignment microscope used for the detection of the mark Mk is different) to perform the third shot area S ₃ The second scan exposure action. That is, the main control unit 90, a third irradiation area S ₃ of the second scanning exposure operation, in FIG. 7 (b), before the projection system main body 42, detected by the alignment microscope 64 is irradiated is formed in the third within the region S ₃ 4 markers Mk e.g., depending on the detection result, the main control unit 90 updates the third irradiation area S ₃ of the arrangement information. Main control unit 90, while based on this 3 degrees of freedom for precise positioning of the substrate P within the XY plane of the aligned updated information, while a third scan the irradiation area S ₃ of the exposure operation. And, in parallel with the scan exposure operation, the alignment microscope 64, 7 (c), the detection form ₂ in the second irradiation region S as shown in, for example, 4 marks Mk. Main control unit 90, the update information while the third region S ₃ are arranged according to the position of the newly acquired information of the marker Mk, while in parallel with this third irradiation area S ₃ of the second scanning exposure operation right.

The following, although not shown, while the main control unit 90 appropriately based substrate P Y step operation, while for the first irradiation region 4 S ₄ of the scanning exposure. This fourth irradiation area S ₄ of the scanning exposure operation, because of the substantially identical to the third irradiation area S ₃ of the scanning exposure operation, so the description thereof is omitted.

In addition, in the scanning exposure operation of the third and fourth irradiation regions S ₃ and S ₄ , the alignment microscope 62 can be used together with the alignment microscope 64 to detect the mark Mk, and use these alignment microscopes 62 and 64 Output the arrangement information of the updated zone. Further, the irradiation of the second region S ₂ of the divisional areas after exposure are arranged in the evaluation information of the divisional area, such that prior to use the divisional areas of the exposure position of the obtained mark information of Mk. Specifically, for example when seeking a fourth arrangement information region S _4, the main control unit 90 using the first and second lines, although the irradiation area S ₁ 4, S labeled Mk ₄ within the location, but also with this The position information of the marker Mk in the second and third irradiation areas S ₂ and S ₃ obtained previously is used together.

According to the embodiment described above, since the alignment microscopes 62 and 64 and the projection system main body 42 move in the scanning direction separately and independently, at least a part of the scanning exposure operation and the alignment operation can be performed simultaneously (in parallel). Therefore, the time required for a series of operations including the alignment operation and the scanning exposure operation, that is, the series of processing time (production time) required for the exposure processing of the substrate P can be reduced.

In addition, since the alignment microscopes 62 and 64 are respectively arranged on one side and the other side of the projection system main body 42 in the scanning direction, it can be shortened regardless of the scanning direction (forward scanning and double scanning) during scanning exposure. It includes the time required for a series of actions of the alignment action and the scanning exposure action.

"Second Embodiment" Next, the liquid crystal exposure apparatus of 2nd Embodiment is demonstrated using FIG. 8(a)-FIG. 8(d). The configuration of the liquid crystal exposure apparatus of the second embodiment is the same as that of the above-mentioned first embodiment except for the difference in the configuration and operation of the alignment system. Therefore, only the differences will be described below, and the difference from the above-mentioned first embodiment Elements with the same configuration and function are assigned the same reference numerals as in the above-mentioned first embodiment, and their description is omitted.

In the above-mentioned first embodiment, alignment microscopes 62 and 64 (see FIG. 1) are respectively arranged in front and back (+X side and -X side) of the projection system main body 42 in the scanning direction. In contrast, this second embodiment In Fig. 8(a), the alignment microscope 162 is provided only on the +X side of the projection system main body 42.

In addition, compared to the alignment microscopes 62 and 64 of the first embodiment described above, which have a pair of detection fields separated in the Y-axis direction (see FIG. 4(b), etc.), the alignment microscope 162 has a pair of detection fields separated in the Y-axis direction. For example, 4 detection fields. For example, the four detection fields of the alignment microscope 162 are set to be separated from each other so as to be able to simultaneously detect the marks Mk formed across, for example, two divided regions formed in the Y-axis direction.

The second aspect of the present embodiment, the main control unit 90 (see FIG. 2), FIG. 8 (b) and FIG. 8 (c), before the first irradiation area S ₁ of the scanning exposure operation, while aligning the microscope 162 driven in the + X direction, while for a total of 16 marks Mk of detecting, for example, is formed on the substrate P, to obtain the arrangement of the first region S ₁ of the information based on the detection of this tag Mk of the results, and the side view of the arrangement of the information for the substrate P the precise position control, while FIG. 8 (d) shown in the projection system body 42 is driven in the + X direction of the first region S ₁ of the scanning exposure operation.

In the second embodiment, the alignment microscope 162 has, for example, four inspection fields in the Y-axis direction. Therefore, by moving the alignment microscope 62 in the +X direction once, it is possible to inspect a larger area of the substrate P. Mark Mk (in this second embodiment, all markers Mk). Therefore, compared with the first embodiment, a series of processing time (production time) required for the exposure processing of the substrate P can be further shortened.

In this second embodiment, similar to the above-mentioned first embodiment, the Y stepping action of the substrate P and/or the X stepping action of the mask M (refer to FIG. 1) are performed to perform the exposure target The movement of the zoning area. Further, in the present second embodiment, since the system before the first irradiation region S scan of _an exposure, detecting the formation of the substrate P all tags Mk, so when the second irradiation region S after the _second scanning exposure, without re EGA calculation. Of course, it is also possible to perform alignment measurement (EGA calculation) again during scanning exposure after the second irradiation area S ₂ to update the arrangement information of each division area.

"The third embodiment" Next, the liquid crystal exposure apparatus of 3rd Embodiment is demonstrated using FIG. 9(a) and FIG. 9(b). The configuration of the liquid crystal exposure apparatus of the third embodiment is the same as that of the above-mentioned first embodiment except for the difference in the configuration and operation of the alignment system. Therefore, only the differences will be described below, and the difference from the above-mentioned first embodiment Elements with the same configuration and function are assigned the same reference numerals as in the above-mentioned first embodiment, and their description is omitted.

In the first embodiment described above, the alignment system 60 has alignment microscopes 62 and 64 before and after the scanning direction (+X side and -X side) of the projection system main body 42. In contrast, the third embodiment differs from this. This is that the alignment microscope 62 is provided only on the +X side of the projection system main body 42.

In the third embodiment, the main control device 90 (see FIG. 2) returns the alignment microscope 62 and the projection system main body 42 to a predetermined initial position when the substrate P is Y-stepped with respect to the projection system main body 42. Specifically, FIG. 9 (a), when the completion of the first irradiation region of the S ₁ scan exposure operation, the main control unit 90 of the first embodiment of the same, FIG. 9 (b), the Stepping the substrate P in the -Y direction Y (refer to the black arrow in Figure 9(b)).

In addition, the main control device 90, in parallel with the Y stepping motion of the substrate P in the -Y direction, drives the alignment microscope 62 and the projection system main body 42 in the -X direction to return them (refer to Figure 9(b)) White arrow) to the initial position (refer to Figure 4 (a)). In this embodiment, the initial positions of the alignment microscope 62 and the projection system main body 42 are near the -X side end of the respective movable ranges. Thereafter, the main control unit 90, the alignment microscope 42 are driven in the + X direction and the projection system main body 62, according to carry out the first irradiation region S ₁ of the second scanning exposure operation right. Further, also before this second scanning exposure operation, the alignment microscope 62 to be formed in the detection operation of the substrate P labeled Mk, according to its output, the update arrangement of the first region S ₁ information.

According to the third embodiment, even if there is only one alignment microscope 62, the same effect as the above-mentioned first embodiment can be obtained.

In addition, the configuration of the first to third embodiments described above can be appropriately changed. For example, in the second embodiment described above, the alignment microscope 162 may be arranged on both sides (+X side and −X side) of the projection system main body 42 in the scanning direction, as in the first embodiment described above. In this case, even if the scanning direction is the -X direction, alignment measurement can be performed before the projection system main body 42 moves.

Further, the above-described first embodiment, although all lines S at the end of the first detectable label Mk irradiation area _1, the start of the first irradiation area S ₁ of the scanning exposure operation, but is not limited thereto, and may also be formed on the first a plurality of measurement Mk markers within the _irradiation area S 1, the start of the first irradiation area S ₁ of the scanning exposure operation.

In addition, in each of the above embodiments, the alignment measurement operation and the scanning exposure operation are performed in parallel on a single substrate P, but it is not limited to this. For example, two substrates P may be prepared and scanning exposure of one of the substrates P may be performed. The alignment measurement on the other substrate P is performed on one side.

Further, in each embodiment, although the system after the first irradiation region S scan of _an exposure setting the second irradiation region S Scan side ₂ of the exposure of the first region S ₁ of the + Y (on), but not limited thereto, also in the first region S ₁ scan of the exposure Secondly, a fourth irradiation area S ₄ of the scanning exposure. This case, for example, may be used by the first irradiation region S ₁ on the reticle, the irradiation region 4 and a second mask to S ₄ of the (total two mask), the first and second irradiation region of 4 S ₁ and S ₄ continuously perform scanning exposure. Further, also after the first irradiation region of the S ₁ scan exposure, the mask M to the stepping movement in the + X direction for the first irradiation region 4 S ₄ of the scanning exposure.

In addition, in each of the above-mentioned embodiments, although the mark Mk is formed in each division area (the first to fourth irradiation areas S ₁ to S ₄ ), it is not limited to this, and may be formed in the area between adjacent division areas ( The so-called scribe line).

In addition, in each of the above-mentioned embodiments, although a pair of the illumination area IAM and the exposure area IA separated in the Y-axis direction are generated on the mask M and the substrate P (see FIG. 1), the illumination area IAM and the exposure area IA The shape and length are not limited to this, and can be changed appropriately. For example, the length in the Y-axis direction of the illumination area IAM and the exposure area IA may be equal to the length in the Y-axis direction of the pattern surface of the mask M and a partitioned area on the substrate P, respectively. In this case, the transfer of the mask pattern is completed by performing one scan exposure operation for each divided area. Alternatively, the illumination area IAM and the exposure area IA may be an area whose length in the Y-axis direction is half of the length in the Y-axis direction of a pattern surface of the mask M and a partitioned area on the substrate P, respectively. In this case, as in the above-mentioned embodiment, the scanning exposure operation must be performed twice for one divided area.

In addition, as in the above-mentioned embodiment, in order to form a mask pattern in a partitioned area, when the projection system main body 42 is reciprocated for joint exposure, it is possible to align the forward and reverse directions with different detection fields. The microscope is arranged before and after the projection system main body 42 in the scanning direction (X direction). In this case, for example, the alignment microscope for the forward path (for the first exposure operation) can be used to detect the marks Mk at the four corners of the zone area, and the alignment microscope for the return path (for the second exposure operation) can be used to detect the marks Mk near the junction. . Here, the term “joint part” refers to the joint part between the area exposed by scanning exposure in the past (the area where the pattern is transferred) and the area exposed by the scanning exposure of the double pass (the area where the pattern is transferred). As the mark Mk near the junction, the mark Mk may be formed on the substrate P in advance, or the exposed pattern may be used as the mark Mk. In each of the above embodiments, when the projection system main body 42 is driven in the +X direction to perform the scanning exposure operation, the alignment microscope 62 for the forward path and the alignment microscope 64 for the double path are the alignment microscope 64. In addition, when the projection system main body 42 is driven in the −X direction to perform a scanning exposure operation, the alignment microscope for the forward path is the alignment microscope 64, and the alignment microscope for the return path is the alignment microscope 62.

In addition, in the above-mentioned embodiment (and the first and second modification examples), the driving system 24 for driving the lighting system main body 22 of the lighting system 20 and the stage main body 32 for driving the mask stage device 30 The driving system 34 for driving the projection optical system body 42 of the projection optical system 40, the driving system 54 for driving the stage body 52 of the substrate stage device 50, and the driving system 54 for driving the alignment system 60 The driving system 66 of the alignment microscope 62 (refer to FIG. 2 respectively) is described as a linear motor, but it is used to drive the above-mentioned illumination system main body 22, stage main body 32, projection optical system main body 42, stage main body 52 and The type of the actuator of the alignment microscope 62 is not limited to this, and can be changed as appropriate. For example, various actuators such as a feed screw (ball screw) device and a belt drive device can be appropriately used.

In addition, in each of the above embodiments, although the projection system main body 42 and the alignment microscope 62 share a part of the drive system in the scanning direction (such as linear motors, guides, etc.), as long as they can drive the projection system main body 42 and the alignment microscope separately The microscope 62 is not limited to this. The drive system 66 for driving the alignment microscope 62 and the drive system 44 for driving the projection system main body 42 of the projection optical system 40 may be completely independent structures. That is, like the exposure apparatus 10A shown in FIG. 10, the projection optical system main body 42 of the projection optical system 40A and the alignment microscope 62 of the alignment system 60A can be arranged so that the Y positions do not overlap each other, The drive system 66 used to drive the alignment microscope 62 (for example, including linear motors, guides, etc.) and the drive system 44 (for example, including linear motors, guides, etc.) for driving the projection system main body 42 are completely independent structures. In this case, by stepping the substrate P in the Y-axis direction (reciprocating movement) before the scanning exposure operation of the divided area of the exposure object starts, the alignment measurement of the divided area is performed accordingly. In addition, as shown in the exposure apparatus 10B shown in FIG. 11, the driving system 44 (for example, including linear motors, guides, etc.) for driving the projection optical system main body 42 of the projection optical system 40B can be used with The drive system 66 (for example, including linear motors, guides, etc.) of the alignment microscope 62 included in the drive alignment system 60B is arranged so that the Y position does not overlap, so that the drive system 44 and the drive system 66 are completely independent.

In addition, in each of the above-mentioned embodiments, although the measurement system 26 for performing position measurement of the lighting system main body 22 of the lighting system 20 and the measurement system for performing position measurement of the stage main body 32 of the mask stage device 30 36. The measuring system 46 for measuring the position of the projection optical system body 42 of the projection optical system 40, the measuring system 56 for measuring the position of the stage body 52 of the substrate stage device 50, and the alignment The measurement system 68 (respectively refer to FIG. 2) for measuring the position of the alignment microscope 62 of the system 60 includes a linear encoder, but it is used to perform the above-mentioned illumination system body 22, stage body 32, and projection system projection. The types of measurement systems for the position measurement of the optical system main body 42, the stage main body 52 and the alignment microscope 62 are not limited to this, and can be changed as appropriate. For example, an optical interferometer can be appropriately used, or a measurement system that uses a linear encoder and an optical interferometer in combination. Various measurement systems such as.

Here, the illumination system 20, the mask stage device 30, the projection optical system 40, the substrate stage device 50, and the alignment system 60 may be modularized. Hereinafter, the lighting system 20 is called the lighting system module 12M, the mask stage device 30 is called the mask stage module 14M, the projection optical system 40 is called the projection optical system module 16M, and the substrate stage device 50 is called the substrate stage mold. The group 18M and the alignment system 60 are called the alignment system module 20M. Hereinafter, although they are appropriately referred to as "each module 12M to 20M", they are placed on the corresponding stands 28A to 28E to be physically independent of each other.

Therefore, as shown in FIG. 12, in the liquid crystal exposure apparatus 10, any (one or more) of the aforementioned modules 12M to 20M (in FIG. 12, for example, the substrate stage module 18M) , To be replaced independently of other modules. At this time, the module to be replaced is replaced with the stand 28A-28E supporting the module (the stand 28E in Fig. 12).

During the replacement operation of the modules 12M-20M described above, the modules 12M-20M (and the stand 28A-28E supporting the modules) as the replacement objects move in the X-axis direction along the surface of the floor 26. Therefore, it is preferable that the stands 28A-28E are provided with, for example, wheels that can easily move on the ground 26, or an air-floating device. As described above, in the liquid crystal exposure apparatus 10 of this embodiment, since any one of the modules 12M to 20M can be easily separated from other modules individually, it is excellent in maintainability. In addition, in FIG. 12, although the substrate stage module 18M and the gantry 28E move together in the +X direction (inside the paper surface) relative to other elements (projection optics module 16M, etc.), they are separated from other elements. However, the moving direction of the moving target module (and stand) is not limited to this. For example, it may be the -X direction (in front of the paper) or the +Y direction (above the paper). In addition, a positioning device to ensure the reproducibility of the positions of the stands 28A-28E on the ground 26 can also be installed. The positioning device can be installed on each stand 28A-28E, and can also reproduce the installation position of each stand 28A-28E by the cooperative action of the members provided on each stand 28A-28E and the members provided on the ground 26.

In addition, the liquid crystal exposure apparatus 10 of the present embodiment has a structure in which each of the above-mentioned modules 12M to 20M can be separated independently, so that each of the modules 12M to 20M can be upgraded individually. The so-called upgrading includes, for example, upgrading to cope with the enlargement of the exposure target substrate P, etc., and also includes the case where each module 12M-20M is replaced with a better performance although the substrate P has the same size.

Here, for example, when the substrate P is enlarged, only the area of the substrate P (in this embodiment, the size in the X-axis and Y-axis directions) increases, and the thickness of the substrate P (the size in the Z-axis direction) is generally substantial The above will not change. Therefore, for example, when the substrate stage module 18M of the liquid crystal exposure apparatus 10 is upgraded in response to the increase in the size of the substrate P, as shown in FIG. 12, the substrate stage module 18M is replaced with the newly inserted substrate stage module 18AM And the frame 28G supporting the substrate stage module 18AM, although the size in the X-axis and/or Y-axis direction will change, the size in the Z-axis direction will not change substantially. Similarly, the mask stage module 14M will not substantially change the size in the Z-axis direction due to the upgrade in response to the enlargement of the mask M.

In addition, for example, to expand the illumination area IAM and the exposure area IA (refer to FIG. 1 etc., respectively), the number of illumination optical systems of the illumination system module 12M and the projection lens module of the projection optical system module 16M can be increased. The number of groups is to upgrade the lighting system module 12M and the projection optical system module 16M respectively. Compared with the upgraded lighting system module and projection optical system module (none of which are not shown) after the upgrade, only the size of the X-axis and/or Y-axis direction has changed, and the size of the Z-axis direction will not change substantially.

Therefore, in the liquid crystal exposure apparatus 10 of this embodiment, the stands 28A-28E supporting the respective modules 12M-20M and the stand 28A supporting the upgraded modules (refer to the stand 28G supporting the substrate stage module 18AM shown in FIG. 12 ), the dimension in the Z-axis direction is fixed. Here, the term “fixed size” means that the dimensions in the Z-axis direction of the stand before and after the replacement are the same, that is, the Z-axis dimension of the stand that supports modules with the same function is approximately constant. In this way, in the liquid crystal exposure apparatus 10 of the present embodiment, since the dimensions in the Z-axis direction of the respective stages 28A to 28E are fixed, the time required to design each module can be shortened.

In addition, in the liquid crystal exposure device 10, since the exposure surface of the substrate P and the pattern surface of the mask M are respectively parallel to the direction of gravity (so-called tandem arrangement), the illumination system module 12M and the mask stage module 14M, each module of the projection optics module 16M and the substrate stage module 18M are arranged in line on the ground 26. In this way, since the above-mentioned modules will not have the effect of each other's own weight, there is no need to arrange the substrate stage device, projection optical system, mask stage device and illumination system corresponding to the above-mentioned modules in the direction of gravity. Like a conventional exposure device, a high-rigidity main frame (body) supporting each element is provided. In addition, due to the simple structure, the installation work of the device, the maintenance work of each module 12M-20M, and the replacement work can be carried out easily and in a short time. In addition, since the above-mentioned modules can be arranged along the floor 26, the height of the entire device can be reduced. In this way, the chamber for accommodating the above-mentioned modules can be miniaturized, cost reduction is achieved, and the installation period is shortened.

Furthermore, in each of the above embodiments, the light source used in the illumination system 20 and the wavelength of the illumination light IL irradiated from the light source are not particularly limited, and may be, for example, ArF excimer laser light (wavelength 193nm), KrF excimer laser light (Wavelength 248nm) and other ultraviolet light, or F ₂ laser light (wavelength 157nm) and other vacuum ultraviolet light.

Furthermore, in the above-mentioned embodiment, although the main body 22 of the illumination system including the light source is driven in the scanning direction, it is not limited to this. For example, the light source may be fixed in the same way as the exposure device disclosed in Japanese Patent Laid-Open No. 2000-12422. Only the illumination light IL is scanned in the scanning direction.

In addition, the illumination area IAM and the exposure area IA are formed in the shape of a strip extending in the Y-axis direction in the above embodiment, but it is not limited to this. For example, as disclosed in the specification of US Patent No. 5,729,331, the plural numbers are arranged in a zigzag shape. Combine the regions.

In addition, in each of the above embodiments, the mask M and the substrate P are arranged perpendicular to the horizontal plane (so-called tandem arrangement), but the present invention is not limited to this. The mask M and the substrate P may be arranged parallel to the horizontal plane. In this case, the optical axis of the illumination light IL is approximately parallel to the direction of gravity.

In addition, although the micro-positioning in the XY plane of the substrate P is performed according to the result of the alignment measurement during the scanning exposure operation, it can also be parallel to this and the substrate can be obtained before the scanning exposure operation (or in parallel with the scanning exposure operation) The surface position information of P is used to control the surface position of the substrate P (so-called autofocus control) during the scanning exposure operation.

In addition, the use of the exposure device is not limited to the exposure device for liquid crystal that transfers the pattern of the liquid crystal display element to the square glass plate, but can also be widely applied to, for example, exposure devices for the manufacture of organic EL (Electro-Luminescence) panels and semiconductor manufacturing. The exposure equipment, the exposure equipment used to manufacture thin film magnetic heads, micromachines and DNA chips. In addition, not only micro-elements such as semiconductor components, but also photomasks or reticles used in photoexposure equipment, EUV exposure equipment, X-ray exposure equipment, and electronic line exposure equipment to transfer circuit patterns Exposure devices to glass substrates or silicon wafers.

In addition, the object to be exposed is not limited to a glass plate, and may be other objects such as a wafer, a ceramic substrate, a thin film member, or a mask master. In addition, when the exposure target is a substrate for a flat-panel display, the thickness of the substrate is not particularly limited, and includes, for example, a sheet (a flexible sheet-like member). In addition, the exposure apparatus of this embodiment is particularly effective when exposing a substrate with a side length or a diagonal length of 500 mm or more. In addition, when the substrate to be exposed is a flexible sheet (sheet), the sheet may be formed in a roll shape. In this case, there is no need to rely on the stepping action of the stage device, as long as the reel is rotated (winding), it is easy to change (step move) the area of the exposure object relative to the illumination area (illumination light).

Electronic components such as liquid crystal display components (or semiconductor components) are processed through the steps of designing the function and performance of the components, the steps of making a mask (or reticle) according to this design step, and the production of glass substrates (or wafers) Step: The photolithography step of transferring the pattern of the mask (reticle) to the glass substrate by the exposure device and the exposure method of the above embodiments, the developing step of developing the exposed glass substrate, and the remaining photoresist The exposed member of the part other than the part is manufactured by an etching step to remove the photoresist after etching, a photoresist removal step to remove unnecessary photoresist after etching, a component assembly step, an inspection step, and the like. In this case, in the lithography step, the aforementioned exposure method is performed using the exposure device of the aforementioned embodiment, and the device pattern is formed on the glass substrate. Therefore, a high-integrity device can be manufactured with good productivity. Availability on the industry

As explained above, the exposure device and method of the present invention are suitable for scanning and exposing objects. In addition, the manufacturing method of the flat panel display of the present invention is suitable for the production of flat panel displays. In addition, the device manufacturing method of the present invention is suitable for the production of micro devices.

10, 10A, 10B: LCD Exposure Unit 12M: Illumination System Module 14M: Mask Stage Module 16M: Projection Optics System Module 18M: Substrate Stage Module 18AM: Substrate Stage Module 20: Illumination System 20M: Alignment system module 22: Illumination system main body 28A-28G: stand 30: mask stage device 32: stage main body 40, 40A, 40B: projection optical system 42: projection system main body 44: drive system 46: measurement system 50 : Substrate stage device 52: stage body 60, 60A, 60B: alignment system 62, 64: alignment microscope 66: drive system 80: guide 82: ruler 84, 86: read head IA: exposure area IAM: illumination Area IL: Illumination light M: Mask Mk: Mark P: Substrate S ₁ to S ₄ : Irradiation area

Fig. 1 is a conceptual diagram of the liquid crystal exposure apparatus of the first embodiment. [FIG. 2] A block diagram showing the input/output relationship of the main control device with the control system of the liquid crystal exposure device of FIG. 1 as the center. [Figure 3] is a diagram for explaining the configuration of the projection system body and the measurement system of the alignment microscope. [Figure 4 (a) ~ Figure 4 (d)] are diagrams for explaining the operation of the liquid crystal exposure device during the exposure operation (Part 1 to Part 4). [Figures 5(a) to 5(d)] are diagrams for explaining the operation of the liquid crystal exposure device during the exposure operation (part 5 to part 8). [Fig. 6(a) to Fig. 6(c)] are diagrams for explaining the operation of the liquid crystal exposure device during the exposure operation (No. 9 to No. 11). [Fig. 7(a) to Fig. 7(c)] are diagrams for explaining the operation of the liquid crystal exposure device during the exposure operation (part 12 to part 15). [Figures 8(a) to 8(d)] are diagrams for explaining the operation of the alignment system of the second embodiment (part 1 to part 4). [Fig. 9(a) and Fig. 9(b)] are diagrams for explaining the operation of the alignment system and the projection optical system of the third embodiment (Part 1 and 2). [Fig. 10] A diagram showing a modification (Part 1) of the drive system of the projection optical system and the alignment system. [Fig. 11] A diagram showing a modification (Part 2) of the drive system of the projection optical system and the alignment system. [Figure 12] A conceptual diagram of module replacement of liquid crystal exposure device.

10: Liquid crystal exposure device

20: Lighting Department

22: Lighting system body

30: Mask stage device

40: Projection Optics

42: projection system body

50: substrate stage device

52: carrier body

62, 64: Align the microscope

IA: exposure area

IAM: lighting area

IL: Illumination light

M: Mask

Mk: alignment mark

P: substrate

Claims (36)

An exposure device irradiates an object with illumination light through a projection optical system, and drives the projection optical system relative to the object to perform scanning exposure, and includes: The mark detection part is used to perform mark detection of the mark on the object; The first drive system drives the mark detection part; The second drive system drives the projection optical system; and The control device controls the first and second drive systems in such a way that the mark detection portion is driven before the projection optical system is driven. For example, the exposure device of the first item in the scope of patent application, wherein the control device controls the first and second drive systems by driving the projection optical system after at least a part of the mark detection performed by the mark detection section is completed . For example, the exposure device of item 1 or 2 of the scope of patent application, wherein the mark detection section has a first detection device arranged on one side of the projection optical system in the scanning direction of driving the projection optical system relative to the object, and The second detection device arranged on the other side of the projection optical system: The control device is used to drive the projection optical system according to the detection result of the first detection device during the scanning exposure from the other side to the side, and to drive the projection optical system from the side to the other side During scanning exposure, the first and second driving systems are controlled according to the detection result of the second detection device to drive the projection optical system. For example, the exposure device of item 3 of the scope of patent application, wherein the object has at least the first and second division areas with different positions; The control device is configured to drive and control the second detection device to detect the mark in the second division area before performing the scanning exposure from the side to the other side of the second division area The second drive system is controlled by position. For example, the exposure device of item 3 or 4 of the scope of patent application, wherein the control device is configured to move the first detection device and the projection optics from the other side during the scanning exposure from the other side to one side. The first and second drive systems are controlled by driving one side to the one side and the second detecting device from the other side to the one side. Such as the exposure device of any one of items 1 to 5 in the scope of the patent application, wherein the control device is performed in a manner that the mark detection action including the mark detection and at least part of the scan exposure action including the scanning exposure are performed in parallel control. For example, the exposure device of item 6 of the scope of patent application, wherein the mark detection action includes a detection position movement action of moving the mark detection portion to the position where the mark detection action is performed; The scanning exposure operation includes a movement operation of the projection optical system before the scanning exposure starts. For example, the exposure device of item 6 or 7 of the scope of patent application, wherein, the control device makes the driving speed of the projection optical system and the mark detection part in at least one of the mark detection operation and the scanning exposure operation The driving speed is different. For example, in the exposure device of item 8 of the scope of patent application, the driving speed of the mark detecting portion is slower when the mark detecting action is performed in parallel with the scanning exposure action than when only the mark detecting action is performed. For example, the exposure device of any one of items 1 to 9 in the scope of patent application, wherein the mark detection part is arranged to detect the direction crossing the scanning direction of the projection optical system relative to the object, and irradiate the illumination light Compared with the length of the area, the mark with a longer distance between the plural marks on the object. For example, the exposure device of item 10 of the scope of patent application, wherein the object has first and second divisional areas arranged side by side in a direction crossing the scanning direction; The mark detection unit is arranged to detect at least one mark on the first division area and at least one mark on the second division area in a direction crossing the scanning direction. The exposure device of item 11 of the scope of patent application, wherein the control device causes the object and the projection optical system to communicate with each other when the area for performing the exposure operation is changed from the first divided area to the second divided area The relative movement in the direction intersecting the scanning direction is parallel to the relative movement to move the mark detection portion and the projection optical system to the detection start position. For example, the exposure device of any one of items 1 to 12 in the scope of patent application, wherein the optical axis of the projection optical system is parallel to the horizontal plane; The object system is arranged in a state where the exposure surface irradiated by the illumination light is orthogonal to the horizontal plane. For example, the exposure device of item 13 of the scope of patent application, wherein the mark detection part and the projection optical system are configured to be separable from each other. Such as the exposure device of any one of the scope of patent application 1 to 14, wherein the object system is used for the substrate of a flat panel display device. Such as the exposure device of item 15 of the scope of patent application, wherein the length or diagonal length of at least one side of the substrate is more than 500mm. A method for manufacturing a flat panel display, which includes: The action of exposing the object by using the exposure device of any one of items 1 to 16 in the scope of patent application; and The action of developing the object after exposure. A component manufacturing method, which includes: The action of exposing the object by using the exposure device of any one of items 1 to 16 in the scope of patent application; and The action of developing the object after exposure. An exposure method is to irradiate an object with illumination light through a projection optical system, and drive the projection optical system relative to the object to perform scanning exposure, which includes: Use the mark detection unit to perform mark detection of the mark on the object; Use the drive of the mark detection part of the first drive system; Drive the projection optical system using the second drive system; and The control of the first and second drive systems is performed in a way that the drive of the mark detection portion is earlier than the drive of the projection optical system. For example, the exposure method of item 19 of the scope of patent application, wherein, in the control, the first and second driving systems are controlled by driving the projection optical system after at least part of the mark detection performed by the mark detection section is completed . For example, the exposure method of item 19 or 20 of the scope of patent application, wherein the mark detection part has a scanning direction that drives the projection optical system relative to the object, and the first detection device provided on the side of the projection optical system is The second detection device on the other side of the projection optical system; In the control, in the scanning exposure from the other side to the one side, the projection optical system is driven according to the detection result of the first detection device, and the projection optical system is driven from the one side to the other side. During scanning exposure, the first and second driving systems are controlled according to the detection result of the second detection device to drive the projection optical system. For example, the exposure method of item 21 of the scope of patent application, wherein the object has at least the first and second division areas with different positions; In the control, before performing the scanning exposure from the side to the other side of the second division area, the second detection device is driven and controlled to detect the mark in the second division area The second drive system is controlled by position. For example, the exposure method of item 21 or 22 of the scope of patent application, wherein, in the control, the first detection device and the projection optical system are removed from the scanning exposure from the other side to the side. The first and second driving systems are controlled by driving the other side to the one side and driving the second detection device from the other side to the one side. Such as the exposure method of any one of items 19 to 23 in the scope of the patent application, wherein the control is performed in a parallel manner in which the mark detection action including the mark detection and at least part of the scan exposure action including the scanning exposure are performed in parallel control. For example, the exposure method of item 24 of the scope of patent application, wherein the mark detection action includes a detection position movement action of moving the mark detection portion to the position where the mark detection action is performed; The scanning exposure operation includes a movement operation of the projection optical system before the scanning exposure starts. For example, the exposure method of item 24 or 25 of the scope of patent application, wherein, in the control, the driving speed of the projection optical system and the mark detection portion are set in at least one of the mark detection operation and the scanning exposure operation The driving speed is different. For example, in the exposure method of item 26 of the scope of patent application, the driving speed of the mark detection portion is slower when the mark detection action is performed in parallel with the scanning exposure action than when only the mark detection action is performed. For example, the exposure method of any one of items 19 to 27 in the scope of patent application, wherein the mark detection part is arranged to detect the direction crossing the scanning direction of the projection optical system relative to the object, and irradiate the illumination light Compared with the length of the area, the mark with a longer distance between the plural marks on the object. Such as the exposure method of item 28 of the scope of patent application, wherein the object has the first and second divisional areas arranged side by side in the direction crossing the scanning direction; The mark detection unit is arranged to detect at least one mark on the first division area and at least one mark on the second division area in a direction crossing the scanning direction. For example, the exposure method of item 29 of the scope of patent application, wherein, under the control, when the area for performing the exposure operation is changed from the first division area to the second division area, the object and the projection optical system The relative movement in the direction intersecting the scanning direction is parallel to the relative movement, and the mark detection unit and the projection optical system are moved to the detection start position. Such as the exposure method of any one of items 19 to 30 in the scope of patent application, wherein the optical axis of the projection optical system is parallel to the horizontal plane; The object system is arranged in a state where the exposure surface irradiated by the illumination light is orthogonal to the horizontal plane. Such as the exposure method of item 31 of the scope of patent application, wherein the mark detection part and the projection optical system are configured to be separable from each other. Such as the exposure method of any one of items 19 to 32 in the scope of patent application, wherein the object system is used for the substrate of a flat-panel display device. For example, the exposure method of item 33 in the scope of patent application, wherein the length of at least one side or the diagonal length of the substrate is more than 500mm. A method for manufacturing a flat panel display, which includes: The action of exposing the object by using any one of the exposure methods in the scope of patent application 19 to 34; and The action of developing the object after exposure. A component manufacturing method, which includes: The action of exposing the object by using any one of the exposure methods in the scope of patent application 19 to 34; and The action of developing the object after exposure.

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