CN107533303B

CN107533303B - Exposure apparatus, method for manufacturing flat panel display, method for manufacturing device, and exposure method

Info

Publication number: CN107533303B
Application number: CN201680020549.4A
Authority: CN
Inventors: 内藤一夫; 青木保夫; 长岛雅幸
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 2015-03-31
Filing date: 2016-03-31
Publication date: 2021-04-30
Anticipated expiration: 2036-03-31
Also published as: KR102549056B1; TW202041978A; JPWO2016159200A1; CN107533303A; KR20170128601A; TW202316204A; JP6855008B2; TW202401146A; TW201643558A; WO2016159200A1

Abstract

A liquid crystal exposure apparatus (10) for performing scanning exposure by irradiating a substrate (P) with Illumination Light (IL) through a projection optical system (30) and driving the projection optical system (PL) relative to the substrate (P) is provided with alignment microscopes (62, 64) for detecting a mark (Mk) provided on the substrate (P), a 1 st drive system for driving the alignment microscopes (62, 64), a 2 nd drive system for driving the projection optical system (40), and a control device for controlling the 1 st and the 2 nd drive systems so that the alignment microscopes (62, 64) are driven before the projection optical system (40) is driven. Thus, the production time required for the exposure process can be suppressed.

Description

Exposure apparatus, method for manufacturing flat panel display, method for manufacturing device, and exposure method

Technical Field

The present invention relates to an exposure apparatus, a method for manufacturing a flat panel display, a method for manufacturing a device, and a method for exposing, and more particularly, to an exposure apparatus and a method for forming a predetermined pattern on an object by performing scanning exposure in which an energy beam is scanned in a predetermined scanning direction on the object, and a method for manufacturing a flat panel display or a device including the exposure apparatus or the method.

Background

Conventionally, in a photolithography process for manufacturing electronic devices (microdevices) such as liquid crystal display devices and semiconductor devices (integrated circuits, etc.), an exposure apparatus is used which transfers a pattern formed on a mask or reticle (hereinafter, collectively referred to as "mask") onto a glass plate or a wafer (hereinafter, collectively referred to as "substrate") using an energy beam.

As such an exposure apparatus, a beam scanning type scanning exposure apparatus is known which scans exposure illumination light (energy beam) in a predetermined scanning direction while keeping a mask and a substrate substantially stationary, thereby forming a predetermined pattern on the substrate (for example, see patent document 1).

In the exposure apparatus described in patent document 1, in order to correct a position error between an exposure target region on a substrate and a mask, measurement (alignment measurement) of marks on the substrate and the mask is performed by an alignment microscope through a projection optical system while the projection optical system is moved in a direction opposite to a scanning direction during exposure, and the position error between the substrate and the mask is corrected based on the measurement result. Here, since the alignment mark on the substrate is measured by the projection optical system, the alignment operation and the exposure operation are performed sequentially (serially), and it is very difficult to suppress the processing time (production time) required for the exposure processing of all the substrates.

Prior art documents

[ patent document 1] Japanese patent application laid-open No. 2000-12422

Disclosure of Invention

Means for solving the problems

The present invention has been made in view of the above circumstances, and an exposure apparatus according to claim 1 is an exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the exposure apparatus including: a mark detection unit for detecting a mark provided on the object; a 1 st drive system for driving the mark detection part; a 2 nd drive system for driving the projection optical system; and a control device for controlling the 1 st and 2 nd driving systems in such a manner that the mark detection unit is driven before the projection optical system is driven.

The method for manufacturing a flat panel display according to claim 2 of the present invention includes an operation of exposing the object by using the exposure apparatus of the present invention, and an operation of developing the exposed object.

The method for manufacturing a device according to claim 3 of the present invention includes an operation of exposing the object by using the exposure apparatus of the present invention, and an operation of developing the exposed object.

An exposure method according to claim 4 of the present invention is an exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the method including: a mark detection unit for detecting a mark provided on the object; driving of the mark detection section using the 1 st drive train; driving the projection optical system using a 2 nd drive system; and controlling the 1 st and 2 nd driving systems so that the mark detection unit is driven before the projection optical system is driven.

The method for manufacturing a flat panel display according to claim 5 of the present invention includes an operation of exposing the object by the exposure method of the present invention and an operation of developing the exposed object.

The method for manufacturing a device according to claim 6 of the present invention includes an operation of exposing the object by the exposure method of the present invention and an operation of developing the exposed object.

Drawings

Fig. 1 is a conceptual diagram of a liquid crystal exposure apparatus of embodiment 1.

Fig. 2 is a block diagram showing the input/output relationship of a main controller configured to center the control system of the liquid crystal exposure apparatus of fig. 1.

Fig. 3 is a diagram for explaining the configuration of the projection system main body and the measurement system of the alignment microscope.

Fig. 4(a) to 4(d) are views (1 to 4) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation.

Fig. 5(a) to 5(d) are views (5 to 8) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation.

Fig. 6(a) to 6(c) are views (9 to 11) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation.

Fig. 7(a) to 7(c) are views (12 to 15) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation.

Fig. 8(a) to 8(d) are views (1 to 4) for explaining the operation of the alignment system of embodiment 2.

Fig. 9(a) and 9(b) are diagrams (1 and 2) for explaining the alignment system and the operation of the projection optical system according to embodiment 3.

Fig. 10 is a view showing a modification (1) of the projection optical system and the drive system of the alignment system.

Fig. 11 is a view showing a modification (2) of the projection optical system and the drive system of the alignment system.

Fig. 12 is a conceptual diagram of module replacement of the liquid crystal exposure apparatus.

[ description of main element symbols ]

10: liquid crystal exposure apparatus 20: lighting system

30: mask stage device 40: projection optical system

50: substrate stage device 60: alignment system

M: mask P: substrate

Detailed Description

EXAMPLE 1

Hereinafter, embodiment 1 will be described with reference to fig. 1 to 7 (c).

A conceptual diagram of a liquid crystal exposure apparatus 10 of embodiment 1 is shown in fig. 1. The liquid crystal exposure apparatus 10 is a projection exposure apparatus of a step & scan system, a so-called scanner, in which a rectangular (square) glass substrate P (hereinafter simply referred to as a substrate P) used in, for example, a liquid crystal display device (flat panel display) is used as an exposure object.

The liquid crystal exposure apparatus 10 includes an illumination system 20 for irradiating illumination light IL as an exposure energy beam, and a projection optical system 40. Hereinafter, a direction parallel to the optical axis of the illumination light IL irradiated from the illumination system 20 to the substrate P through the projection optical system 40 will be referred to as a Z-axis direction, and X-axis and Y-axis orthogonal to each other in a plane orthogonal to the Z-axis will be set for explanation. In the coordinate system of the present embodiment, the Y axis is substantially parallel to the gravity direction. Thus, the XZ plane is substantially parallel to the horizontal plane. The rotation (inclination) direction around the Z axis is referred to as θ Z direction.

Here, in the present embodiment, a plurality of exposure target regions (appropriately called divisional regions or shot regions) are set on one substrate P, and a mask pattern is sequentially transferred to these plurality of shot regions. In the present embodiment, a case where 4 divisional areas are set on the substrate P (a case where 4 planes are taken) is explained, but the number of divisional areas is not limited thereto and may be changed as appropriate.

In the liquid crystal exposure apparatus 10, although the exposure operation of the so-called step-and-scan method is performed, during the scanning exposure operation, the mask M and the substrate P are substantially in a stationary state, and the illumination system 20 and the projection optical system 40 (illumination light IL) are moved in a long stroke in the X-axis direction (appropriately called the scanning direction) with respect to the mask M and the substrate P, respectively (see white arrows in fig. 1). In contrast, in the stepping operation performed to change the divisional areas to be exposed, the mask M is moved in steps in the X-axis direction by a predetermined stroke, and the substrate P is moved in steps in the Y-axis direction by a predetermined stroke (see the black arrows in fig. 1).

Fig. 2 is a block diagram showing the input/output relationship of the main controller 90 for overall controlling each component of the liquid crystal exposure apparatus 10. As shown in fig. 2, liquid crystal exposure apparatus 10 includes illumination system 20, mask stage device 30, projection optical system 40, substrate stage device 50, alignment system 60, and the like.

The illumination system 20 includes an illumination system main body 22 including a light source (for example, a mercury lamp) or the like of the illumination light IL (see fig. 1). In the scanning exposure operation, the main control device 90 controls the drive system 24 including, for example, a linear motor, to scan and drive the illumination system main body 22 in the X-axis direction by a predetermined long stroke. The main control device 90 obtains the position information of the illumination system main body 22 in the X-axis direction by the measurement system 26 including, for example, a linear encoder, and performs the position control of the illumination system main body 22 based on the position information. In the present embodiment, for example, g-line, h-line, i-line, or the like is used as the illumination light IL.

Mask stage device 30 includes a stage main body 32 that holds mask M. Stage body 32 can be moved in steps in the X-axis direction and the Y-axis direction as appropriate by a drive system 34 including, for example, a linear motor. When the X-axis direction is a stepping operation for changing the divisional area of the exposure target, main control device 90 controls drive system 34 to step stage main body 32 in the X-axis direction. As will be described later, when the Y-axis direction is a stepping operation of changing the area (position) to be subjected to scanning exposure in the divisional area to be exposed, main control device 90 controls drive system 34 to step stage main body 32 in the Y-axis direction. The drive system 34 can drive the mask M in the 3-degree-of-freedom (X, Y, θ z) direction in the XY plane in an appropriate minute manner during the alignment operation described later. The position information of the mask M is obtained by a measurement system 36 including a linear encoder, for example.

The projection optical system 40 includes a projection system main body 42 including an optical system for forming an erect positive image of a mask pattern on a substrate P (see FIG. 1) with an equal magnification. The projection system main body 42 is disposed in a space formed between the substrate P and the mask M (see fig. 1). In the scanning exposure operation, the main controller 90 controls the drive system 44 including, for example, a linear motor, to scan and drive the projection system main body 42 in the X-axis direction by a predetermined long stroke in synchronization with the illumination system main body 22. The main control device 90 obtains the position information of the projection system main body 42 in the X-axis direction by the measurement system 46 including, for example, a linear encoder, and performs the position control of the projection system main body 42 based on the position information.

Returning to fig. 1, in the liquid crystal exposure apparatus 10, when the illumination area IAM on the mask M is illuminated with the illumination light IL from the illumination system 20, a projection image (partial erected image) of the mask pattern in the illumination area IAM is formed on the substrate P at an illumination area (exposure area IA) of the illumination light IL conjugate to the illumination area IAM through the projection optical system 40 with the illumination light IL passing through the mask M. The illumination light IL (illumination area IAM and exposure area IA) is relatively moved in the scanning direction with respect to the mask M and the substrate P to perform a scanning exposure operation. That is, in the liquid crystal exposure apparatus 10, a pattern of the mask M is generated on the substrate P by the illumination system 20 and the projection optical system 40, and the pattern is formed on the substrate P by exposing the sensitive layer (resist layer) on the substrate P with the illumination light IL.

Here, in the present embodiment, the illumination area IAM generated on the mask M by the illumination system 20 includes a pair of rectangular areas separated in the Y-axis direction. The Y-axis direction length of one rectangular region is set to, for example, 1/4 set as the Y-axis direction length of the pattern surface of the mask M (that is, the Y-axis direction length of each divisional region set on the substrate P). The distance between the pair of rectangular regions is also set to 1/4, for example, which is the same as the length of the pattern surface of the mask M in the Y-axis direction. Therefore, exposure area IA formed on substrate P similarly includes a pair of rectangular areas separated in the Y-axis direction. In this embodiment, in order to completely transfer the pattern of the mask M to the substrate P, although the secondary scanning exposure operation is required for one divided region, there is an advantage that the illumination system main body 22 and the projection system main body 42 can be miniaturized. Specific examples of the scanning exposure operation will be described later.

Substrate stage device 50 includes a stage main body 52 for holding a back surface (a surface opposite to an exposure surface) of substrate P. Returning to fig. 2, when the stepping operation of the divisional area of the exposure target is changed in the Y-axis direction, main control device 90 controls drive system 54 including, for example, a linear motor or the like, and thereby step-drives stage main body 52 in the Y-axis direction. The drive system 54 can slightly drive the substrate P in the 3-degree-of-freedom (X, Y, θ z) direction in the XY plane during a substrate alignment operation described later. The positional information of substrate P (stage body 52) is obtained by a measurement system 56 including, for example, a linear encoder.

Returning to fig. 1, the alignment system 60 is provided with, for example, 2

alignment microscopes

62, 64. The alignment microscopes 62 and 64 are arranged in a space formed between the substrate P and the mask M (a position between the substrate P and the mask M in the Z-axis direction), and detect an alignment mark Mk (hereinafter, simply referred to as a mark Mk) formed on the substrate P and a mark (not shown) formed on the mask M. In the present embodiment, 1 mark Mk (for 1 divisional area, for example, 4 marks) is formed near each of the four corners of each divisional area, and the mark of the mask M is formed at a position corresponding to the mark Mk through the projection optical system 40. The number and positions of the marks Mk and the marks of the mask M are not limited to these, and may be changed as appropriate. In addition, in each drawing, the mark Mk is shown to be actually larger for the sake of understanding.

One alignment microscope 62 is disposed on the + X side of the projection system body 42, and the other alignment microscope 64 is disposed on the-X side of the projection system body 42. The alignment microscopes 62 and 64 each have a pair of detection fields (detection regions) separated in the Y axis direction, and can simultaneously detect, for example, 2 marks Mk separated in the Y axis direction in one divisional region.

The alignment microscopes 62 and 64 can simultaneously (in other words, without changing the positions of the alignment microscopes 62 and 64) detect the marks formed on the mask M and the marks Mk formed on the substrate P. The main controller 90 obtains relative positional displacement information between the marks formed on the mask M and the marks Mk formed on the substrate P, and performs relative positioning between the substrate P and the mask M in the XY plane to correct the positional displacement (cancel or reduce) each time the mask M performs an X-step operation or a Y-step operation on the substrate P, for example. The alignment microscopes 62 and 64 are integrally configured by a mask detection unit for detecting (observing) the mark of the mask M and a substrate detection unit for detecting (observing) the mark Mk of the substrate P, by a common housing or the like, and are driven by a drive system 66 through the common housing. Alternatively, the mask detecting unit and the substrate detecting unit may be constituted by separate cases, and in this case, it is preferable that the mask detecting unit and the substrate detecting unit are movable by substantially common drive system 66 with the same operation characteristics, for example.

The main controller 90 (see fig. 2) controls the drive system 66 including, for example, a linear motor, and drives the

alignment microscopes

62 and 64 in the X-axis direction independently for a predetermined long stroke. The main controller 90 obtains position information in the X-axis direction of each of the

alignment microscopes

62 and 64 by the measurement system 68 including, for example, a linear encoder, and independently controls the positions of the

alignment microscopes

62 and 64 based on the position information. In addition, the projection system main body 42 and the

alignment microscopes

62 and 64 have almost the same position in the Y-axis direction, and the movable ranges thereof partially overlap with each other.

Here, although the

alignment microscopes

62 and 64 of the alignment system 60 and the projection system main body 42 of the projection optical system 40 are physically (mechanically) independent (separate) elements and are driven (speed and position) and controlled independently of each other by the main control device 90 (see fig. 2), the drive system 66 for driving the

alignment microscopes

62 and 64 and the drive system 44 for driving the projection system main body 42 share a part of, for example, a linear motor, a linear guide, and the like in the drive system in the X-axis direction, and the drive characteristics of the

alignment microscopes

62 and 64 and the projection system main body 42 or the control characteristics by the main control device 90 are substantially equal.

Specifically, for example, when the

alignment microscopes

62 and 64 and the projection system main body 42 are driven in the X-axis direction by moving-coil linear motors, the drive system 66 and the drive system 44 share a fixed ferromagnetic member (e.g., a permanent magnet) unit. On the other hand, the movable sub-coil units are provided independently of the

alignment microscopes

62 and 64 and the projection system main body 42, and the main controller 90 (see fig. 2) independently controls the driving (speed and position) of the

alignment microscopes

62 and 64 in the X-axis direction and the driving (speed and position) of the projection system main body 42 in the X-axis direction by individually supplying power to the coil units. Therefore, the main controller 90 can change (arbitrarily change) the distance between the

alignment microscopes

62 and 64 and the projection system main body 42 in the X-axis direction. In addition, the main controller 90 may move the

alignment microscopes

62 and 64 and the projection system main body 42 at different speeds in the X-axis direction.

The main controller 90 (see fig. 2) detects the plurality of marks Mk formed on the substrate P using the alignment microscope 62 (or the alignment microscope 64), and calculates arrangement information (including information on the position (coordinate value), shape, and the like of the divisional area) of the divisional area where the mark Mk to be detected is formed, based on the detection result (position information of the plurality of marks Mk) by a known full wafer enhanced alignment (EGA) method.

Specifically, when the projection system main body 42 is driven in the + X direction during the scanning exposure operation, the main control device 90 (see fig. 2) performs position detection of the plurality of marks Mk using the alignment microscope 62 disposed on the + X side of the projection system main body 42 before the scanning exposure operation, and calculates the arrangement information of the divisional areas to be exposed. In addition, when the projection system main body 42 is driven in the-X direction during the scanning exposure operation, the alignment microscope 64 disposed on the-X side of the projection system main body 42 is used to detect the positions of the plurality of marks Mk before the scanning exposure operation, so as to calculate the arrangement information of the divisional areas to be exposed. The main controller 90 performs a scanning exposure operation (transfer of a mask pattern) on a target region by appropriately controlling the illumination system 20 and the projection optical system 40 while performing a precise positioning (substrate alignment operation) in the 3-degree-of-freedom direction in the XY plane of the substrate P based on the calculated arrangement information.

Next, a specific configuration of the measurement system 46 (see fig. 2) for obtaining the positional information of the projection system main body 42 of the projection optical system 40 and the measurement system 68 for obtaining the positional information of the alignment microscope 62 of the alignment system 60 will be described.

As shown in fig. 3, the liquid crystal exposure apparatus 10 has a guide 80 for guiding the projection system main body 42 in the scanning direction. The guide 80 is constituted by a member extending parallel to the scanning direction. The guide 80 also has a function of guiding the movement of the alignment microscope 62 in the scanning direction. Although the guide 80 is shown between the mask M and the substrate P in fig. 7, the guide 80 is actually disposed in a position avoiding the optical path of the illumination light IL in the Y-axis direction.

A scale 82 including at least a reflection-type diffraction grating having a periodic direction (X-axis direction) parallel to the scanning direction is fixed to the guide 80. The projection system main body 42 has a head 84 disposed opposite to the scale 82. In the present embodiment, an encoder system is formed in which the measurement system 46 (see fig. 2) for obtaining the positional information of the projection system main body 42 is configured by the scale 82 and the head 84. The alignment microscopes 62 and 64 each have a head 86 (the alignment microscope 64 is not shown in fig. 3) disposed to face the scale 82. In the present embodiment, an encoder system is formed in which the scale 82 and the head 86 constitute a measurement system 68 (see fig. 2) for obtaining positional information of the

alignment microscopes

62 and 64. The

heads

84 and 86 can emit encoder measuring beams to the scale 82, receive beams transmitted through the scale 82 (reflected beams on the scale 82), and output relative position information on the scale 82 based on the light reception results.

As described above, in the present embodiment, the scale 82 constitutes the measurement system 46 (see fig. 2) for obtaining the positional information of the projection system main body 42 and also constitutes the measurement system 68 (see fig. 2) for obtaining the positional information of the

alignment microscopes

62 and 64. That is, the projection system main body 42 and the

alignment microscopes

62 and 64 perform position control based on a common coordinate system (longitudinal axis) set by a diffraction grating formed on the scale 82. The drive system 44 (see fig. 2) for driving the projection system main body 42 and the drive system 66 (see fig. 2) for driving the

alignment microscopes

62 and 64 may be partially common or may be completely independent.

The encoder systems constituting the

measurement systems

46 and 68 may be linear (1DOF) encoder systems having only one longitudinal axis in the X-axis direction (scanning direction), for example, or may have a plurality of longitudinal axes. For example, a plurality of

heads

84 and 86 are arranged at predetermined intervals in the Y-axis direction, and the amount of rotation in the θ z direction of the projection system main body 42 and the

alignment microscopes

62 and 64 can be determined. Further, a 3DOF encoder system may be used in which an XY 2-dimensional diffraction grating is formed on the scale 82 and has a longitudinal axis in the 3-degree-of-freedom direction of the X, Y and θ z directions. Further, a plurality of known 2-dimensional heads capable of measuring the length in the direction perpendicular to the scale surface in addition to the periodic direction of the diffraction grating may be used as the

heads

84 and 86 to obtain the position information in the 6-degree-of-freedom direction of the projection system main body 42 and the

alignment microscopes

62 and 64.

Next, an example of the operation of the liquid crystal exposure apparatus 10 in the scanning exposure operation will be described with reference to fig. 4(a) to 7 (c). The following exposure operation (including the alignment measurement operation) is performed by the main controller 90 (not shown in fig. 4 a to 7 c) under the control of fig. 2.

In the present embodiment, the division region with the first exposure order (hereinafter referred to as the 1 st shot region S)₁) Is set on the-X side and the-Y side of the substrate P. The symbol S given to the divisional area on the substrate P₂～S₄The exposure sequences are represented by irradiation areas of 2 nd to 4 th.

As shown in FIG. 4(a), before the exposure is started, the projection system main body 42 and the

alignment microscopes

62 and 64 are arranged in the 1 st irradiation region S in plan view₁The initial position on the-X side of (1). At this time, the projection system main body 42 and the

alignment microscopes

62 and 64 are disposed close to each other in the X-axis direction. The Y-axis direction position of the detection field of the alignment microscope 62 is aligned with the irradiation regions S formed in the 1 st and 4 th₁、S₄The Y-axis direction positions of the inner marks Mk are almost coincident.

Subsequently, as shown in fig. 4(b), the main controller 90 drives the alignment microscope 62 in the + X direction, and detects the irradiation region S formed in the 1 st region₁For example, 2 marks Mk formed in the vicinity of the end at the-X side among the inner, for example, 4 marks Mk (see bold circle mark in fig. 4 (b): the same applies hereinafter). Further, as shown in fig. 4(c), the main controller 90 drives the alignment microscope 62 in the + X direction to detect the irradiation region S formed in the 1 st shot region S₁For example, 2 markers Mk formed in the vicinity of the + X-side end among the inner, for example, 4 markers Mk. In addition, in FIG. 4(b), although the projection system main body 42 is stopped, the 1 st irradiation region S may be started in the alignment microscope 62₁After the detection of the inner marker Mk, during the detection of the marker Mk, for example, during a period after the detection of the marker Mk on the-X side and during the movement to the marker Mk on the + X side (specifically, immediately before the detection of the marker Mk on the + X side), the acceleration of the projection system main body 42 is started.

A main control device 90 formed in the 1 st irradiation area S₁The 1 st irradiation region S is obtained from the detection results (position information) of 4 marks Mk₁Arrangement information of the optical fiber. The main controller 90, as shown in FIG. 4(d), controls the irradiation region S according to the 1 st irradiation region₁The arrangement information of the substrate P is used to perform a precision positioning (substrate alignment operation) in a 3-degree-of-freedom direction in the XY plane of the substrate P, and to synchronously drive the projection system main body 42 and the illumination system main body 22 (not shown in FIG. 4 (d); refer to FIG. 1) of the illumination system 20 in the + X direction, so as to perform a 1 st illumination region S₁The 1 st scanning exposure.

The main control device 90 controls the irradiation region S of the 1 st region₁In parallel with the start of the 1 st scanning exposure operationThe alignment microscope 62 is used to detect the region S formed in the 4 th shot region₄(1 st irradiation region S₁The + X-side segmented region) of the marks Mk, for example, 2 marks Mk formed near the-X-side end.

The main control device 90 can be used to obtain the 4 th irradiation area S₄The detection result of, for example, 2 marks Mk in the image and the 1 st irradiation region S obtained previously (stored in a memory device (not shown))₁The detection results of, for example, 4 markers in the image are subjected to EGA calculation to update the 1 st irradiation region S₁Arrangement information of the optical fiber. The main control device 90 can proceed the 1 st irradiation region S while properly performing the precision positioning in the 3 degree of freedom direction in the XY plane of the substrate P based on the updated arrangement information₁Scanning exposure operation. To find the 1 st irradiation area S₁Using the arrangement information of the 4 th irradiation region S₄Position information of the mark therein, and the mark is formed only on the 1 st shot region S₁The 4 marks Mk are compared to obtain the arrangement information, the arrangement information considering the statistical tendency in a wide range can be obtained, and the 1 st irradiation region S can be improved₁The alignment accuracy of (2).

Further, as shown in fig. 5(a), the main controller 90 drives the projection system main body 42 in the + X direction to perform the scanning exposure operation, and further drives the alignment microscope 62 in the + X direction to detect the irradiation region S formed in the 4 th irradiation region S₄For example, 2 markers Mk formed in the vicinity of the + X-side end among the inner, for example, 4 markers Mk. The main control device 90 can be used to obtain the 4 th irradiation area S₄The detection result of the 2 markers Mk and the marker Mk acquired before (in this example, the 1 st irradiation region S) in the image are obtained₁For example, 4 marks Mk and 4 th irradiation region S₄E.g. 2 markers Mk) is subjected to EGA calculation to update the 1 st illumination region S₁Arrangement information of the optical fiber. The main control device 90 can proceed the precision positioning of 3 degree of freedom direction in the XY plane of the substrate P based on the updated arrangement information and proceed the 1 st irradiation area S₁Scanning exposure operation.

As described above, in the present embodiment, at least a part of the operation of detecting the mark Mk where the exposure area IA (illumination light IL) is formed in the front of the scanning direction (+ X direction) and the scanning exposure operation of scanning the projection system main body 42 in the + X direction can be performed simultaneously (in parallel) using the alignment microscope 62 disposed in the front of the scanning direction (+ X direction) with respect to the projection system main body 42. Thus, the time required for a series of operations including the alignment operation and the scanning exposure operation can be shortened. In addition, the main controller 90 can appropriately perform EGA calculation each time the marks Mk provided at different positions are measured sequentially, for example, to update the arrangement information of the divisional areas to be exposed. This can improve the alignment accuracy of the divisional area to be exposed.

Further, when the projection system main body 42 is driven in the + X direction for the scanning exposure operation, the main controller 90 can drive the alignment microscope 64 disposed rearward (in the-X direction) in the scanning direction with respect to the projection system main body 42 in the + X direction so as to follow the projection system main body 42 (see fig. 5 a and 5 b). At this time, the main controller 90 detects the mark Mk formed in the rear of the scanning direction (the (-X direction) in the exposure area IA (the illumination light IL) using the alignment microscope 64, and uses the detection result for EGA calculation.

As described above, in the present embodiment, since illumination area IAM (see fig. 1) generated on mask M and exposure area IA generated on substrate P are a pair of rectangular areas separated in the Y axis direction, the pattern image of mask M transferred to substrate P by the one-time scanning exposure operation is formed in a pair of belt-like areas (half of the total area of one divided area) extending in the X axis direction and separated in the Y axis direction.

Next, as shown in FIG. 5(b), the main controller 90 performs the 1 st irradiation region S₁The 2 nd (repeating) scanning exposure operation of (1) moves the substrate P and the mask M step by step in the-Y direction (see black arrow in fig. 5 (b)). The step movement amount of the substrate P at this time is, for example, 1/4, which is the length of one divisional area in the Y-axis direction. In this case, it is preferable that the substrate P and the mask M be moved in steps in the-Y direction so that the relative positional relationship between the substrate P and the mask M does not change (or so that the relative positional relationship can be corrected)) So that the stepping movement thereof is preferable.

In this embodiment, the 1 st irradiation region S₁The 2 nd scanning exposure operation(s) is performed by moving the projection system main body 42 in the-X direction as shown in fig. 5 (c). A main control device 90 for driving the alignment microscope 64 in the-X direction to detect the 1 st irradiation region S₁For example, a mark Mk (not shown) near the end of the + X side inside. The main control device 90, based on the detection result of the alignment microscope 64 and the 1 st irradiation area S₁The arrangement information of the first and second alignment marks is used to perform a fine positioning in a 3-degree-of-freedom direction in the XY plane of the substrate P and to perform a 1 st irradiation region S₁The 2 nd scanning exposure action. Accordingly, as shown in FIG. 5(d), the mask pattern transferred by the 1 st scanning exposure and the mask pattern transferred by the 2 nd scanning exposure are in the 1 st shot region S₁Inner bonding, the pattern of the mask M is entirely transferred to the No. 1 irradiation region S₁. And corresponding to the 1 st irradiation region S₁The alignment operation of the 2 nd scanning exposure in (2) is performed by measuring the positional deviation in the 3 degree of freedom (X, Y, θ z) direction in the XY plane from the marks at 2 points (+ X-side marks) of the marks Mk of the mask M and the marks Mk of the substrate P, and therefore, the time required for alignment can be substantially shortened as compared with the alignment operation of (1) st.

When irradiating the 1 st irradiation region S₁When the scanning exposure is finished, the main control device 90 performs the irradiation of the 2 nd irradiation area S₂(1 st irradiation region S₁The + Y-side divisional area) of the substrate P is moved stepwise in the-Y direction to the 1 st shot area S₁The same procedure as in the scanning exposure operation is performed for the 2 nd irradiation region S₂Scanning exposure.

That is, the 2 nd irradiation region S₂The 1 st scanning exposure operation (S) is based on the 2 nd shot region S detected by the alignment microscope 62 as shown in FIG. 6(a)₂And the 3 rd irradiation region S₃(2 nd irradiation region S₂The + X-side divisional area) to obtain the 2 nd irradiation area S₂Based on the arrangement information, the 3 degree of freedom in the XY plane of the substrate P is performedAnd (4) precisely positioning. Wherein the 3 rd irradiation region S₃The detection operation (and updating of arrangement information) of the inner mark Mk and the 2 nd irradiation region S₂Is parallel. The main controller 90 moves the substrate P and the mask M in steps in the-Y direction, and then detects, for example, the 2 nd irradiation region S formed near the + X-side end portion with the alignment microscope 64₂Inner marker Mk (not shown). The main control device 90, based on the detection result of the alignment microscope 64 and the 2 nd irradiation area S₂The arrangement information of the first and second alignment marks is used to precisely position the substrate P in the 3-degree-of-freedom direction in the XY plane, and the 2 nd irradiation region S is irradiated while moving the projection system body 42 in the-X direction as shown in FIG. 6(b)₂The 2 nd scanning exposure action.

When irradiating the 2 nd irradiation region S₂When the scanning exposure is finished, the main controller 90 moves the mask M (see fig. 1) in steps in the + X direction to move the mask M and the 3 rd shot area S on the substrate P₃Are opposite. A main control device 90 for detecting the light beam formed in the No. 3 irradiation region S by the alignment microscope 62₃Marker Mk in the vicinity of the end on the inner-X side. In this state, as shown in fig. 6(c), the main controller 90 moves the projection system main body 42 in the + X direction and performs the irradiation of the 3 rd irradiation region S₃The 1 st scanning exposure operation. The alignment (precision positioning of the substrate P) is controlled in view of the 3 rd irradiation region S₃The arrangement information and the detection result of the alignment microscope 62. No. 3 irradiation region S₃The arrangement information is based on making the 2 nd irradiation region S₂The 2 nd and 3 rd irradiation regions S obtained during exposure₂、S₃The position of the inner mark Mk is calculated by irradiating the No. 3 irradiation region S with the alignment microscope 62₃The marks of the mask M and the marks Mk of the substrate P in the state of being arranged to face the mask M may be measured for positional deviation in the 3-degree-of-freedom (X, Y, θ z) direction in the XY plane. Therefore, the 2 nd irradiation region S₂Can substantially shorten the 3 rd irradiation region S compared with the alignment₃The time required for alignment.

Thereafter, the main control device90, for irradiating the 3 rd irradiation region S₃The 2 nd scanning exposure operation (c) is to step the substrate P and the mask M in the + Y direction as shown in fig. 7 (a). Accordingly, the position of the microscope 64 in the Y-axis direction in the detection field of view is aligned with the irradiation regions S formed in the 2 nd and 3 rd regions₂、S₃The positions of the inner marks Mk in the Y axis direction are almost the same.

A main control device 90 for controlling the irradiation of the 1 st irradiation region S₁The same procedure as in the 1 st scanning exposure operation (except that the alignment microscope used for the detection of the mark Mk is different), the 3 rd irradiation region S is irradiated₃The 2 nd scanning exposure action. That is, the main control device 90 irradiates the 3 rd irradiation region S₃The 2 nd scanning exposure operation (S) is performed by inspecting the 3 rd irradiation region S formed in the front of the projection system main body 42 by the alignment microscope 64 as shown in fig. 7(b)₃For example, 4 marks Mk, and the main control device 90 updates the 3 rd irradiation region S according to the detection result₃Arrangement information of the optical fiber. The main control device 90, based on the updated arrangement information, performs precision positioning in 3 degree of freedom direction in XY plane of the substrate P, and simultaneously performs the 3 rd irradiation region S₃Scanning exposure operation. In parallel with this scanning exposure operation, the microscope 64 is aligned, and the 2 nd irradiation region S formed in the image is detected as shown in fig. 7(c)₂E.g. 4 markers Mk. The main control device 90 updates the 3 rd irradiation area S based on the position information of the newly acquired mark Mk₃The arrangement information of the first and second light sources, and a side of the 3 rd irradiation region S₃The 2 nd scanning exposure action.

Hereinafter, although not shown, the main controller 90 performs the Y-stepping operation of the substrate P as appropriate and performs the irradiation of the 4 th irradiation region S₄Scanning exposure. To this 4 th irradiation region S₄The scanning exposure operation of (3) is performed in such a manner that the irradiation region S is irradiated₃The scanning exposure operation is substantially the same, and therefore, the description thereof is omitted.

In addition, in the No. 3 and No. 4 irradiation region S₃、S₄In the scanning exposure operation of (3), the alignment microscope 62 is used together with the alignment microscope 64 to detect the mark Mk, and the outputs of the

alignment microscopes

62 and 64 are usedThe arrangement information of the updated region is obtained. In addition, the 2 nd irradiation region S₂When the arrangement information of the divided regions is obtained by exposing the subsequent divided regions, the position information of the mark Mk obtained by exposing the divided regions can be used. Specifically, for example, the 4 th irradiation region S is obtained₄In the arrangement information of (1 st and (4 th), the main control device 90 uses the 1 st and (4 th) irradiation areas S₁、S₄The position information of the inner mark Mk, but the 2 nd and 3 rd irradiation regions S obtained before may be used together with the position information₂、S₃Position information of the inner marker Mk.

According to the present embodiment described above, since the

alignment microscopes

62 and 64 are moved in the scanning direction separately and independently from the projection system main body 42, at least a part of the scanning exposure operation and the alignment operation can be performed simultaneously (in parallel). Accordingly, the time required for a series of operations including the alignment operation and the scanning exposure operation, that is, the series of processing times (production times) required for the exposure processing of the substrate P can be shortened.

Further, since the

alignment microscopes

62 and 64 are disposed on one side and the other side of the projection system main body 42 in the scanning direction, the time required for a series of operations including the alignment operation and the scanning exposure operation can be shortened regardless of the scanning direction (forward scanning and backward scanning) during the scanning exposure operation.

EXAMPLE 2

Next, a liquid crystal exposure apparatus according to embodiment 2 will be described with reference to fig. 8(a) to 8 (d). The configuration of the liquid crystal exposure apparatus according to embodiment 2 is the same as that of embodiment 1 except for the configuration and operation of the alignment system, and therefore, only the differences will be described below, and the same reference numerals as those of embodiment 1 are given to the elements having the same configuration and function as those of embodiment 1, and the description thereof will be omitted.

In the above-described embodiment 1, the alignment microscopes 62 and 64 (see fig. 1) are arranged in front of and behind the projection system main body 42 in the scanning direction (+ X side and-X side), respectively, whereas in the present embodiment 2, as shown in fig. 8a, the alignment microscope 162 is provided only on the + X side of the projection system main body 42.

In contrast to

alignment microscopes

62 and 64 of embodiment 1 described above, which have a pair of detection fields separated in the Y-axis direction (see fig. 4(b), for example), alignment microscope 162 has, for example, 4 detection fields separated in the Y-axis direction. The alignment microscope 162 has, for example, 4 detection fields, and the intervals between the detection fields are set so that the marks Mk crossing the, for example, 2 divisional areas adjacent to each other in the Y-axis direction can be detected simultaneously.

In the embodiment 2, the main controller 90 (see fig. 2) irradiates the 1 st irradiation region S as shown in fig. 8(b) and 8(c)₁Before the scanning exposure operation of (1), while driving the alignment microscope 162 in the + X direction, for example, a total of 16 marks Mk formed on the substrate P are detected, and the 1 st irradiation region S is obtained from the detection result of the marks Mk₁And the 1 st irradiation region S is performed by driving the projection system main body 42 in the + X direction as shown in FIG. 8(d) while performing the precise position control of the substrate P according to the arrangement information₁Scanning exposure operation.

In the embodiment 2, since the alignment microscope 162 has, for example, 4 detection fields in the Y-axis direction, the marks Mk (all the marks Mk in the embodiment 2) formed at a wider range of the substrate P can be detected by moving the alignment microscope 62 once in the + X direction. Therefore, compared to example 1, a series of processing times (production times) required for the exposure processing of the substrate P can be further shortened.

In embodiment 2, similarly to embodiment 1, the movement of the divisional areas to be exposed is performed by performing the Y-step operation of the substrate P and/or the X-step operation of the mask M (see fig. 1). In the present embodiment 2, the irradiation region S is in the 1 st irradiation region S₁Before the scanning exposure, all the marks Mk formed on the substrate P are detected, and hence the 2 nd irradiation region S₂In subsequent scanning exposures, no EGA calculation is required. Of course, the 2 nd irradiation region S may be set₂During the subsequent scanning exposure, the alignment measurement (EGA calculation) is performed again to update the arrangement information of each divisional area.

EXAMPLE 3

Next, a liquid crystal exposure apparatus according to embodiment 3 will be described with reference to fig. 9(a) and 9 (b). The configuration of the liquid crystal exposure apparatus according to embodiment 3 is the same as that of embodiment 1 except for the configuration and operation of the alignment system, and therefore, only the differences will be described below, and the same reference numerals as those of embodiment 1 are given to the elements having the same configuration and function as those of embodiment 1, and the description thereof will be omitted.

While the alignment system 60 in the above-described embodiment 1 has the

alignment microscopes

62 and 64 in front and rear sides (+ X side and-X side) of the projection system main body 42 in the scanning direction, the present embodiment 3 is different in that the alignment microscope 62 is provided only on the + X side of the projection system main body 42.

In the embodiment 3, the main controller 90 (see fig. 2) returns the alignment microscope 62 and the projection system main body 42 to the predetermined initial positions when the substrate P is Y-stepped with respect to the projection system main body 42. Specifically, for example, as shown in FIG. 9(a), the 1 st irradiation region S₁When the scanning exposure operation of (2) is finished, the main controller 90 performs a stepping operation of the substrate P in the-Y direction Y (see black arrows in fig. 9 b) as shown in fig. 9 b, similarly to the above-described embodiment 1.

In parallel with the Y stepping operation of the substrate P in the-Y direction, the main controller 90 drives the alignment microscope 62 and the projection system main body 42 in the-X direction to return (see white arrows in fig. 9 b) to the initial position (see fig. 4 a). In this embodiment, the initial positions of the alignment microscope 62 and the projection system main body 42 are near the-X-side end of the movable range. Thereafter, the main controller 90 drives the alignment microscope 62 and the projection system main body 42 in the + X direction, respectively, to irradiate the 1 st irradiation region S₁The 2 nd scanning exposure action. Before the 2 nd scanning exposure operation, the alignment microscope 62 may be used to detect the mark Mk formed on the substrate P, and the 1 st irradiation region S may be updated based on the output of the mark Mk₁Arrangement information of the optical fiber.

According to the present embodiment 3, even if there is only one alignment microscope 62, the same effects as those of the above-described embodiment 1 can be obtained.

The structure of each of the embodiments 1 to 3 described above can be changed as appropriate. For example, in the above-described embodiment 2, the alignment microscopes 162 may be arranged on both sides (+ X side and-X side) of the projection system main body 42 in the scanning direction, as in the above-described embodiment 1. In this case, alignment measurement can be performed before the movement of the projection system body 42 even if the scanning direction is the-X direction.

In the above-described embodiment 1, the irradiation region S is set to the 1 st irradiation region S₁After the detection of all the marks Mk is completed, the 1 st irradiation region S is started₁The scanning exposure operation of (1) can be performed in the irradiation region S₁In the measurement of the plurality of marks Mk in the area, the 1 st irradiation region S is started₁Scanning exposure operation.

In the above embodiments, the alignment measurement operation and the scanning exposure operation are performed in parallel on a single substrate P, but the present invention is not limited thereto, and two substrates P may be prepared, and the alignment measurement may be performed on one substrate P while performing scanning exposure on the other substrate P.

In the above embodiments, the irradiation region S is set to the 1 st irradiation region S₁After the scanning exposure, the setting is performed in the 1 st irradiation region S₁The 2 nd irradiation region S on the + Y (upper) side of₂The scanning exposure of (1) can be performed in the irradiation region S₁Next to the scanning exposure, the 4 th irradiation region S is irradiated₄Scanning exposure. In this case, the irradiation region S can be formed by using, for example, the irradiation region S1₁A mask facing the light source and a 4 th irradiation region S₄The 1 st and 4 th irradiation regions S are irradiated with the opposite masks (two masks in total)₁、S₄Scanning exposure is continuously performed. In addition, the 1 st irradiation region S may be₁After the scanning exposure, the mask M is moved in steps in the + X direction to perform the 4 th shot region S₄Scanning exposure.

In the above embodiments, the mark Mk is formed in each of the divisional areas (the 1 st to 4 th irradiation areas S)₁～S₄) But not limited thereto, may be formed in regions between adjacent regionsSo called scribes line).

In each of the above embodiments, although a pair of illumination areas IAM and exposure areas IA separated in the Y axis direction are formed on mask M and substrate P, respectively (see fig. 1), the shapes and lengths of illumination areas IAM and exposure areas IA are not limited to these, and may be changed as appropriate. For example, the Y-axis direction lengths of illumination area IAM and exposure area IA may be equal to the Y-axis direction lengths of the pattern surface of mask M and one divided area on substrate P, respectively. In this case, the transfer of the mask pattern is completed by performing 1 scanning exposure operation on each divided region. Alternatively, illumination area IAM and exposure area IA may be one area whose Y-axis direction length is half the Y-axis direction length of the pattern surface of mask M and one divided area on substrate P, respectively. In this case, as in the above-described embodiment, it is necessary to perform 2 scanning exposure operations for one divisional area.

In the case where the projection system main body 42 is reciprocated to perform the joint exposure by forming one mask pattern in the divisional area as in the above-described embodiment, the forward and backward alignment microscopes having different detection fields can be arranged in the front and rear of the projection system main body 42 in the scanning direction (X direction). In this case, for example, the marks Mk at the four corners of the divided region may be detected by an alignment microscope for the forward path (1 st exposure operation), and the marks Mk near the joint may be detected by an alignment microscope for the backward path (2 nd exposure operation). Here, the joint portion is a joint portion between a region exposed by the scanning exposure of the forward path (a region to which a pattern is transferred) and a region exposed by the scanning exposure of the backward path (a region to which a pattern is transferred). The mark Mk near the joint may be formed on the substrate P in advance, or may be an exposed pattern. In each of the above embodiments, when the projection system main body 42 is driven in the + X direction to perform the scanning exposure operation, the forward alignment microscope is the alignment microscope 62, and the backward alignment microscope is the alignment microscope 64. When the projection system main body 42 is driven in the-X direction to perform the scanning exposure operation, the forward alignment microscope is the alignment microscope 64, and the backward alignment microscope is the alignment microscope 62.

In the above-described embodiment (and modifications 1 and 2), although the description has been made on the case where drive system 24 for driving illumination system main body 22 of illumination system 20, drive system 34 for driving stage main body 32 of mask stage device 30, drive system 44 for driving projection optical system main body 42 of projection optical system 40, drive system 54 for driving stage main body 52 of substrate stage device 50, and drive system 66 (see fig. 2, respectively) for driving alignment microscope 62 of alignment system 60 are linear motors, however, the types of actuators for driving illumination system main body 22, stage main body 32, projection optical system main body 42, stage main body 52, and alignment microscope 62 are not limited to these, various actuators such as a feed screw (ball screw) device and a belt drive device can be used as appropriate.

In the above embodiments, the projection system main body 42 and the alignment microscope 62 share a part of the drive system (for example, linear motor, guide, etc.) in the scanning direction, but the present invention is not limited to this as long as the projection system main body 42 and the alignment microscope 62 can be driven individually, and the drive system 66 for driving the alignment microscope 62 and the drive system 44 for driving the projection system main body 42 of the projection optical system 40 may be configured to be completely independent. That is, as in the exposure apparatus 10A shown in fig. 10, the projection optical system main body 42 of the projection optical system 40A and the alignment microscope 62 of the alignment system 60A are arranged so that the Y positions do not overlap each other, and the drive system 66 (including, for example, a linear motor, a guide, and the like) for driving the alignment microscope 62 and the drive system 44 (including, for example, a linear motor, a guide, and the like) for driving the projection system main body 42 can be completely independent from each other. In this case, the alignment measurement of the divisional area to be exposed is performed by stepping (reciprocating) the substrate P in the Y-axis direction before the start of the scanning exposure operation of the divisional area. As in the exposure apparatus 10B shown in fig. 11, the drive system 44 and the drive system 66 may be configured to be completely independent from each other by disposing the drive system 44 (including, for example, a linear motor, a guide, and the like) for driving the projection optical system main body 42 included in the projection optical system 40B and the drive system 66 (including, for example, a linear motor, a guide, and the like) for driving the alignment microscope 62 included in the alignment system 60B so that the Y positions do not overlap.

In the above-described embodiments, although the description has been made of the case where linear encoders are included in measurement system 26 for measuring the position of illumination system main body 22 of illumination system 20, measurement system 36 for measuring the position of stage main body 32 of mask stage device 30, measurement system 46 for measuring the position of projection optical system main body 42 of projection optical system 40, measurement system 56 for measuring the position of stage main body 52 of substrate stage device 50, and measurement system 68 for measuring the position of alignment microscope 62 of alignment system 60 (see fig. 2, respectively), the types of measurement systems for measuring the positions of illumination system main body 22, stage main body 32, projection optical system main body 42, stage main body 52, and alignment microscope 62 are not limited to these, and may be changed as appropriate, and, for example, an optical interferometer may be used as appropriate, And various measurement systems using a linear encoder and an optical interferometer in combination.

Here, illumination system 20, mask stage device 30, projection optical system 40, substrate stage device 50, and alignment system 60 may be modularized. Hereinafter, illumination system 20, mask stage device 30, projection optical system 40, projection optical system module 16M, substrate stage device 50, substrate stage module 18M, and alignment system 60 are referred to as alignment system module 20M. Hereinafter, the modules 12M to 20M are appropriately referred to as "modules", but are placed on the corresponding stands 28A to 28E so as to be physically independent from each other.

Therefore, as shown in fig. 12, in liquid crystal exposure apparatus 10, any (1 or a plurality of) modules among modules 12M to 20M (in fig. 12, for example, substrate stage module 18M) can be replaced independently of the other modules. At this time, the module to be replaced is replaced integrally with the stages 28A to 28E (the stage 28E in fig. 12) supporting the module.

During the replacement operation of the modules 12M to 20M, the modules 12M to 20M to be replaced (and the stands 28A to 28E supporting the modules) move in the X-axis direction along the surface of the floor surface 26. Therefore, it is preferable that the stands 28A to 28E be provided with, for example, wheels or air-floating devices that can be easily moved on the floor surface 26. As described above, in the liquid crystal exposure apparatus 10 of the present embodiment, since any one of the modules 12M to 20M can be easily separated from the other modules individually, the maintenance and repair performance is excellent. In fig. 12, display substrate stage module 18M is moved in the + X direction (inside the paper surface) together with mount 28E with respect to the other elements (projection optical system module 16M and the like) so as to be separated from the other elements, but the moving direction of the moving object module (and mount) is not limited thereto, and may be, for example, the-X direction (in front of the paper surface) or the + Y direction (above the paper surface). Furthermore, a positioning device for ensuring the reproducibility of the position of each of the stands 28A to 28E after installation on the floor surface 26 may be provided. The positioning device may be provided on each of the stands 28A to 28E, or the positions of the stands 28A to 28E may be reproduced by the cooperative operation of members provided on the stands 28A to 28E and members provided on the floor surface 26.

In addition, since the liquid crystal exposure apparatus 10 of the present embodiment has a configuration in which the modules 12M to 20M can be independently separated, the modules 12M to 20M can be upgraded individually. The upgrade includes, for example, an upgrade for coping with an increase in size of the substrate P to be exposed, and also includes a case where the respective modules 12M to 20M are replaced with better performance although the size of the substrate P is the same.

Here, for example, when the substrate P is increased in size, only the area of the substrate P (in this embodiment, the dimensions in the X-axis and Y-axis directions) is increased, and the thickness of the substrate P (the dimension in the Z-axis direction) does not substantially change in general. Therefore, for example, when substrate stage module 18M of liquid crystal exposure apparatus 10 is upgraded in accordance with an increase in size of substrate P, as shown in fig. 12, substrate stage module 18AM and stage 28G supporting substrate stage module 18AM, which are newly inserted, change the size in the X-axis and/or Y-axis direction, but the size in the Z-axis direction does not substantially change. Similarly, the dimension of the mask stage module 14M in the Z-axis direction does not substantially change due to the upscaling of the mask M in accordance with the increase in size.

Further, for example, in order to enlarge illumination area IAM and exposure area IA (see fig. 1 and the like, respectively), illumination system module 12M and projection optical system module 16M can be upgraded by increasing the number of illumination optical systems included in illumination system module 12M and the number of projection lens modules included in projection optical system module 16M, respectively. In comparison with the illumination system module and the projection optical system module (both not shown) before the upgrade, the dimensions in the X-axis and/or Y-axis direction are changed, and the dimensions in the Z-axis direction are not substantially changed.

Therefore, in liquid crystal exposure apparatus 10 of the present embodiment, the dimensions in the Z-axis direction are fixed by stages 28A to 28E that support respective modules 12M to 20M and a stage that supports the respective modules after the upgrade (see stage 28G that supports substrate stage module 18AM shown in fig. 12). Here, the term "fixed size" means that the mount before replacement and the mount after replacement have the same size in the Z-axis direction, that is, the mount of the module having the same support function has a substantially constant size in the Z-axis direction. As described above, in the liquid crystal exposure apparatus 10 of the present embodiment, since the dimension of each of the stages 28A to 28E in the Z-axis direction is fixed, the time required for designing each module can be shortened.

In the liquid crystal exposure apparatus 10, since the exposure surface of the substrate P and the pattern surface of the mask M are parallel to the direction of gravity (so-called vertical arrangement), the illumination system module 12M, the mask stage module 14M, the projection optical system module 16M, and the substrate stage module 18M can be arranged in series on the floor surface 26. Since the modules do not act on each other by their own weight, it is not necessary to provide a high-rigidity main frame (body) for supporting the elements, as in a conventional exposure apparatus in which a substrate stage device, a projection optical system, a mask stage device, and illumination, which correspond to the modules, are arranged to overlap in the direction of gravity, for example. Further, the structure is simple, and the installation work of the apparatus, the maintenance work of each of the modules 12M to 20M, the replacement work, and the like can be easily performed in a short time. Further, since the modules can be arranged along the floor surface 26, the overall height of the apparatus can be reduced. Thus, the chamber for accommodating the modules can be miniaturized, the cost can be reduced, and the installation period can be shortened.

In each of the above embodiments, the wavelength of the light source used in the illumination system 20 and the illumination light IL emitted from the light source are not particularly limited, and may be, for example, ultraviolet light such as ArF excimer laser light (wavelength 193nm) and KrF excimer laser light (wavelength 248nm), or vacuum ultraviolet light such as F2 laser light (wavelength 157 nm).

In the above embodiment, the illumination system main body 22 including the light source is driven in the scanning direction, but the present invention is not limited thereto, and the light source may be fixed and only the illumination light IL may be scanned in the scanning direction, as in the exposure apparatus disclosed in, for example, japanese patent application laid-open No. 2000-12422.

Further, illumination area IAM and exposure area IA are formed in a band shape extending in the Y axis direction in the above embodiment, but the present invention is not limited thereto, and a plurality of areas arranged in a zigzag shape may be combined as disclosed in, for example, U.S. Pat. No. 5,729,331.

In the above embodiments, the mask M and the substrate P are arranged to be orthogonal to the horizontal plane (so-called column arrangement), but the present invention is not limited thereto, and the mask M and the substrate P may be arranged to be parallel to the horizontal plane. In this case, the optical axis of the illumination light IL is substantially parallel to the gravity direction.

Further, while the fine positioning of the substrate P in the XY plane is performed based on the result of the alignment measurement during the scanning exposure operation, the surface position information of the substrate P may be obtained prior to (or in parallel with) the scanning exposure operation, and the surface position control of the substrate P may be performed during the scanning exposure operation (so-called auto focus control).

The exposure apparatus is not limited to an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, and can be widely applied to an exposure apparatus for manufacturing an organic EL (Electro-Luminescence) panel, an exposure apparatus for manufacturing a semiconductor, and an exposure apparatus for manufacturing a thin film magnetic head, a micromachine, a DNA chip, and the like. In addition, the present invention is applicable not only to microdevices such as semiconductor devices, but also to exposure apparatuses that transfer a circuit pattern onto a glass substrate, a silicon wafer, or the like, in order to manufacture a mask or a reticle used in a light exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, or the like.

The object to be exposed is not limited to a glass plate, but may be another object such as a wafer, a ceramic substrate, a film member, or a mask master. When the exposure target is a substrate for a flat panel display, the thickness of the substrate is not particularly limited, and examples thereof include a sheet (a sheet member having flexibility). The exposure apparatus of the present embodiment is particularly effective when the object to be exposed is a substrate having a side length or diagonal length of 500mm or more. In the case where the substrate to be exposed is a flexible sheet (sheet), the sheet may be formed into a roll shape. In this case, the divisional area of the exposure target can be easily changed (moved in steps) with respect to the illumination area (illumination light) by rotating (winding) the drum without depending on the stepping operation of the stage device.

Electronic devices such as liquid crystal display devices (or semiconductor devices) are manufactured through a step of designing functions and performances of the devices, a step of fabricating a mask (or reticle) based on the designing step, a step of fabricating a glass substrate (or wafer), a photolithography step of transferring a mask (reticle) pattern to the glass substrate by the exposure apparatus and the exposure method thereof of each of the embodiments, a development step of developing the exposed glass substrate, an etching step of removing exposed members except for portions where the photoresist remains by etching, a photoresist removal step of removing unnecessary photoresist after etching, a device assembly step, an inspection step, and the like. In this case, since the exposure method is performed using the exposure apparatus of the above embodiment in the photolithography step to form the device pattern on the glass substrate, a device with high integration can be manufactured with good productivity.

Industrial applicability

As described above, the exposure apparatus and method of the present invention are suitable for scanning exposure of an object. The method for manufacturing the flat panel display is suitable for producing the flat panel display. Furthermore, the component manufacturing method of the present invention is suitable for the production of microcomponents.

Claims

1. An exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:

a mark detection unit having a mask detection unit that is disposed between the object and the mask and detects a mark formed on the mask so as not to transmit through the projection optical system, and an object detection unit that is disposed between the object and the mask and detects a mark formed on the object so as not to transmit through the projection optical system;

a 1 st drive system for driving the mark detection part;

a 2 nd drive system for driving the projection optical system; and

a control device for controlling the 1 st and 2 nd driving systems in a manner that the mark detection part is driven before the projection optical system is driven;

a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;

the control device controls the 1 st and 2 nd driving systems so that the projection optical system is driven based on the detection result of the 1 st detection device during the scanning exposure from the other side to the one side, and the projection optical system is driven based on the detection result of the 2 nd detection device during the scanning exposure from the one side to the other side.

2. The exposure apparatus according to claim 1, wherein the control device controls the 1 st and 2 nd drive systems so as to drive the projection optical system after at least a part of the mark detection by the mark detection section is completed.

3. The exposure apparatus according to claim 1, wherein the object has at least 1 st and 2 nd divisional areas that differ in position;

the control device controls the 2 nd drive system to drive and control the 2 nd detection device to a position where the mark in the 2 nd divisional area can be detected before the scanning exposure from the one side to the other side of the 2 nd divisional area.

4. The exposure apparatus according to claim 1, wherein the control device controls the 1 st and 2 nd drive systems so that the 1 st detection device and the projection optical system are driven from the other side to the one side and the 2 nd detection device is driven from the other side to the one side in the scanning exposure from the other side to the one side.

5. The exposure apparatus according to claim 1 or 2, wherein the control device controls the mark detection operation including the mark detection in parallel with at least a part of the scanning exposure operation including the scanning exposure.

6. The exposure apparatus according to claim 5, wherein the mark detection operation includes a detection position movement operation in which the mark detection section moves to a position where the mark detection operation is performed;

the scanning exposure operation includes a movement operation of the projection optical system before the scanning exposure is started.

7. The exposure apparatus according to claim 5, wherein the control device is configured to make a driving speed of the projection optical system different from a driving speed of the mark detection unit in at least one of the mark detection operation and the scanning exposure operation.

8. The exposure apparatus according to claim 7, wherein a driving speed of the mark detection section is slower when the mark detection operation is performed in parallel with the scanning exposure operation than when only the mark detection operation is performed.

9. The exposure apparatus according to claim 5, wherein the mark detection section is configured to detect a mark in which a distance between the plurality of marks provided on the object is longer in a direction intersecting a scanning direction in which the projection optical system is driven with respect to the object than a length of an area irradiated with the illumination light.

10. The exposure apparatus according to claim 9, wherein the object has 1 st and 2 nd divisional areas arranged side by side in a direction intersecting the scanning direction;

the mark detection unit is provided to simultaneously detect at least 1 mark on the 1 st divisional area and at least 1 mark on the 2 nd divisional area in a direction intersecting the scanning direction.

11. The exposure apparatus according to claim 10, wherein the control device moves the object and the projection optical system relative to each other in a direction intersecting the scanning direction when changing the region in which the scanning exposure operation is performed from the 1 st divisional region to the 2 nd divisional region, and moves the mark detection unit and the projection optical system to a detection start position in parallel with the relative movement.

12. The exposure apparatus according to claim 1 or 2, wherein an optical axis of the projection optical system is parallel to a horizontal plane;

the object is disposed in a state where an exposure surface irradiated with the illumination light is orthogonal to the horizontal plane.

13. The exposure apparatus according to claim 12, wherein the mark detection section and the projection optical system are arranged so as to be separable from each other.

14. The exposure apparatus according to claim 1 or 2, wherein the object is a substrate for a flat panel display device.

15. The exposure apparatus according to claim 14, wherein the length of at least one side or the diagonal length of the substrate is 500mm or more.

16. A method for manufacturing a flat panel display, comprising:

an act of exposing the object using the exposure apparatus according to any one of claims 1 to 15; and

and developing the exposed object.

17. A method for manufacturing a device, comprising:

and developing the exposed object.

18. An exposure method for irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object to perform scanning exposure, comprising:

performing mark detection of a mark formed on a mask so as not to transmit through the projection optical system using a mask detection portion provided in a mark detection portion, performing mark detection of a mark formed on the object so as not to transmit through the projection optical system using an object detection portion provided in the mark detection portion, the mask detection portion and the object detection portion being disposed between the object and the mask;

driving of the mark detection section using the 1 st drive train;

driving the projection optical system using a 2 nd drive system; and

control of the 1 st and 2 nd driving systems in such a manner that the driving of the mark detection section precedes the driving of the projection optical system;

the control is such that the projection optical system is driven based on the detection result of the 1 st detection device in the scanning exposure from the other side to the one side, and the 1 st and 2 nd drive systems are controlled based on the detection result of the 2 nd detection device in the scanning exposure from the one side to the other side.

19. The exposure method according to claim 18, wherein the 1 st and 2 nd drive systems are controlled so as to drive the projection optical system after the control is performed such that at least a part of the mark detection by the mark detection section is completed.

20. The exposure method according to claim 18, wherein the object has at least 1 st and 2 nd divisional areas that differ in position;

the control is to control the 2 nd drive system so that the 2 nd detection device is drive-controlled to a position where the mark in the 2 nd divisional area can be detected before the scanning exposure from the one side to the other side of the 2 nd divisional area.

21. The exposure method according to claim 18, wherein the 1 st and 2 nd drive systems are controlled so that the 1 st detection device and the projection optical system are driven from the other side to the one side and the 2 nd detection device is driven from the other side to the one side in the scanning exposure from the other side to the one side.

22. The exposure method according to claim 18 or 19, wherein the control is performed in such a manner that a mark detection operation including the mark detection and at least a part of a scan exposure operation including the scan exposure are performed in parallel.

23. The exposure method according to claim 22, wherein the mark detection operation includes a detection position movement operation in which the mark detection section moves to a position where the mark detection operation is performed;

24. The exposure method according to claim 22, wherein the control is such that a driving speed of the projection optical system is made different from a driving speed of the mark detection section in at least one of the mark detection operation and the scanning exposure operation.

25. The exposure method according to claim 24, wherein a driving speed of the mark detection section is slower when the mark detection operation is performed in parallel with the scanning exposure operation than when only the mark detection operation is performed.

26. The exposure method according to claim 22, wherein the mark detection section is configured to detect a mark in which a distance between the plurality of marks provided on the object is longer in a direction intersecting a scanning direction in which the projection optical system is driven with respect to the object than a length of an area irradiated with the illumination light.

27. The exposure method according to claim 26, wherein the object has 1 st and 2 nd divisional areas arranged side by side in a direction intersecting the scanning direction;

28. The exposure method according to claim 27, wherein the control moves the object and the projection optical system relative to each other in a direction intersecting the scanning direction when changing the region in which the scanning exposure operation is performed from the 1 st divisional region to the 2 nd divisional region, and moves the mark detection section and the projection optical system to a detection start position in parallel with the relative movement.

29. The exposure method according to claim 18 or 19, wherein an optical axis of the projection optical system is parallel to a horizontal plane;

30. The exposure method according to claim 29, wherein the mark detection section and the projection optical system are arranged so as to be separable from each other.

31. The exposure method according to claim 18 or 19, wherein the object is a substrate for a flat panel display device.

32. The exposure method according to claim 31, wherein the length of at least one side or the diagonal length of the substrate is 500mm or more.

33. A method for manufacturing a flat panel display, comprising:

an act of exposing the object using the exposure method according to any one of claims 18 to 32; and

and developing the exposed object.

34. A method for manufacturing a device, comprising:

and developing the exposed object.