CN107430354B - Exposure apparatus, method for manufacturing flat panel display, method for manufacturing device, and exposure method - Google Patents

Exposure apparatus, method for manufacturing flat panel display, method for manufacturing device, and exposure method Download PDF

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Publication number
CN107430354B
CN107430354B CN201680020548.XA CN201680020548A CN107430354B CN 107430354 B CN107430354 B CN 107430354B CN 201680020548 A CN201680020548 A CN 201680020548A CN 107430354 B CN107430354 B CN 107430354B
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optical system
projection optical
driving
mark
exposure
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CN107430354A (en
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内藤一夫
青木保夫
长岛雅幸
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Abstract

A liquid crystal exposure apparatus (10) for irradiating a substrate (P) with Illumination Light (IL) through a projection optical system (40) and performing scanning exposure by driving the projection optical system (40) with respect to the substrate (P) is provided with an alignment system (60) for detecting a mark (Mk) provided on the substrate (P), a 1 st drive system for driving the alignment system (60), a 2 nd drive system for driving the projection optical system (40), and a control device for controlling the 1 st and 2 nd drive systems so that the projection optical system (40) and the alignment system (60) do not contact each other. Thus, contact between the projection optical system (40) and the alignment system (60) can be avoided.

Description

Exposure apparatus, method for manufacturing flat panel display, method for manufacturing device, and exposure method
Technical Field
The present invention relates to an exposure apparatus, a method for manufacturing a flat panel display, a method for manufacturing a device, and a method for exposing, and more particularly, to an exposure apparatus and a method for forming a predetermined pattern on an object by performing scanning exposure in which an energy beam is scanned in a predetermined scanning direction on the object, and a method for manufacturing a flat panel display or a device including the exposure apparatus or the method.
Background
Conventionally, in a photolithography process for manufacturing electronic devices (microdevices) such as liquid crystal display devices and semiconductor devices (integrated circuits, etc.), an exposure apparatus is used which transfers a pattern formed on a mask or reticle (hereinafter, collectively referred to as "mask") onto a glass plate or a wafer (hereinafter, collectively referred to as "substrate") using an energy beam.
As such an exposure apparatus, a beam scanning type scanning exposure apparatus is known which scans exposure illumination light (energy beam) in a predetermined scanning direction while keeping a mask and a substrate substantially stationary, thereby forming a predetermined pattern on the substrate (for example, see patent document 1).
In the exposure apparatus described in patent document 1, in order to correct a position error between an exposure target region on a substrate and a mask, measurement (alignment measurement) of marks on the substrate and the mask is performed by an alignment microscope through a projection optical system while the projection optical system is moved in a direction opposite to a scanning direction during exposure, and the position error between the substrate and the mask is corrected based on the measurement result. Here, since the alignment mark on the substrate is measured by the projection optical system, the alignment operation and the exposure operation are performed sequentially (serially), and it is very difficult to suppress the processing time (cycle time) required for the exposure processing of all the substrates.
Prior art documents
[ patent document 1] Japanese patent application laid-open No. 2000-12422
Disclosure of Invention
Means for solving the problems
The present invention has been made in view of the above problems, and a 1 st exposure apparatus according to 1 st aspect of the present invention is an exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the apparatus including: a mark detection part for detecting a mark provided on the object, a 1 st drive system for driving the mark detection part, a 2 nd drive system for driving the projection optical system, and a control device for controlling the 1 st and 2 nd drive systems so as to prevent the projection optical system and the mark detection part from contacting each other.
A 2 nd exposure apparatus according to claim 2 of the present invention is an exposure apparatus for performing scanning exposure by irradiating illumination light to an object through a projection optical system and driving the projection optical system with respect to the object, the apparatus comprising: a mark detection part for detecting a mark provided on the object, a 1 st drive system for driving the mark detection part, a 2 nd drive system for driving the projection optical system, and a control device for controlling at least one of the 1 st and 2 nd drive systems so that the distance between the projection optical system and the mark detection part is not less than a predetermined distance when at least one of the projection optical system and the mark detection part is driven during the scanning exposure.
A 3 rd exposure apparatus according to claim 3 of the present invention is an exposure apparatus for performing a scanning exposure operation by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the exposure apparatus including: a mark detection part for detecting a mark provided on the object, a 1 st drive system for driving the mark detection part, a 2 nd drive system for driving the projection optical system, and a control device for controlling the 1 st and 2 nd drive systems to drive the projection optical system and the mark detection part at different drive speeds, respectively, in at least a part of the scanning exposure operation.
A 4 th exposure apparatus according to claim 4 of the present invention is an exposure apparatus for performing scanning exposure by irradiating illumination light on an object through a projection optical system and driving the projection optical system with respect to the object, the exposure apparatus including: a mark detection part for detecting a mark provided on the object, a 1 st drive system for driving the mark detection part, a 2 nd drive system for driving the projection optical system, and a control device for controlling the 1 st and 2 nd drive systems so that a stop position at which the projection optical system stops being driven does not overlap with a stop position at which the mark detection part stops being driven.
A 5 th exposure apparatus according to claim 5 of the present invention is an exposure apparatus for performing scanning exposure by irradiating illumination light to an object through a projection optical system and driving the projection optical system with respect to the object, the exposure apparatus including: a mark detection unit for detecting a mark provided on the object, a 1 st drive system for driving the mark detection unit, a 2 nd drive system for driving the projection optical system, and a control device for controlling the 1 st and 2 nd drive systems so that a drive start timing of the projection optical system is different from a drive start timing of the mark detection unit.
A 6 th exposure apparatus according to 6 th aspect of the present invention is an exposure apparatus for performing a scanning exposure operation by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the exposure apparatus including: a mark detection section for detecting a mark provided on the object, and a control device for controlling the positions of the projection optical system and the mark detection section during the scanning exposure so that the relative positional relationship therebetween is not changed.
A 7 th exposure apparatus according to claim 7 of the present invention is an exposure apparatus for forming a predetermined pattern on an object by an exposure operation of irradiating an object with illumination light through a projection optical system and performing exposure by driving the projection optical system in a 1 st direction with respect to the object, the exposure apparatus including: a mark detection unit for detecting a mark provided on the object, a 1 st drive system for driving the mark detection unit in the 1 st direction, and a 2 nd drive system for driving the projection optical system and the 1 st drive system separately and independently in the 1 st direction.
The method for manufacturing a flat panel display according to claim 8 of the present invention comprises: the exposure of the object and the development of the object after the exposure are performed by using any one of the exposure apparatuses 1 to 7 of the present invention.
The device manufacturing method according to claim 9 of the present invention includes: the exposure of the object and the development of the object after the exposure are performed by using any one of the exposure apparatuses 1 to 7 of the present invention.
A 1 st exposure method according to an aspect 10 of the present invention is an exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the method including: detecting a mark provided on the object by using a mark detecting section; driving the mark detection unit using a 1 st drive system; driving the projection optical system using a 2 nd drive system; and control of the 1 st and 2 nd drive systems in such a manner that the projection optical system and the mark detection section do not contact each other.
A 2 nd exposure method according to 11 of the present invention is an exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the method including: detecting a mark provided on the object by using a mark detecting section; driving the mark detection unit using a 1 st drive system; driving the projection optical system using a 2 nd drive system; and controlling at least one of the 1 st and 2 nd driving systems so that the distance between the projection optical system and the mark detection unit is not less than a predetermined distance when at least one of the projection optical system and the mark detection unit is driven during the scanning exposure.
A 3 rd exposure method according to the 12 th aspect of the present invention is an exposure method for performing scanning exposure by irradiating illumination light to an object through a projection optical system and driving the projection optical system with respect to the object, the method including: detecting a mark provided on the object by using a mark detecting section; driving the mark detection unit using a 1 st drive system; driving the projection optical system using a 2 nd drive system; and control of the 1 st and 2 nd drive systems in such a manner that the projection optical system and the mark detection section are driven at different drive speeds during at least part of the scanning exposure operation.
A 4 th exposure method according to 13 of the present invention is an exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the exposure method including: detecting a mark provided on the object by using a mark detecting section; driving the mark detection unit using a 1 st drive system; driving the projection optical system using a 2 nd drive system; and control of the 1 st and 2 nd drive systems so that a stop position at which the drive of the projection optical system is stopped does not overlap with a stop position at which the drive of the mark detection unit is stopped.
A 5 th exposure method according to claim 14 of the present invention is an exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the exposure method including: detecting a mark provided on the object by using a mark detecting section; driving the mark detection unit using a 1 st drive system; driving the projection optical system using a 2 nd drive system; and control of the 1 st and 2 nd driving systems so that the driving start timing of the projection optical system is different from the driving start timing of the mark detection unit.
A 6 th exposure method according to 15 of the present invention is an exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, the exposure method including: detecting a mark provided on the object by using a mark detecting section; and controlling the position of the projection optical system and the position of the mark detection section so that the relative positional relationship therebetween is not changed in the scanning exposure.
A 7 th exposure method according to 16 of the present invention is an exposure method for forming a predetermined pattern on an object by an exposure operation of irradiating an object with illumination light through a projection optical system and performing exposure by driving the projection optical system in a 1 st direction with respect to the object, the method including: detecting a mark provided on the object by using a mark detecting section; driving the mark detection unit in the 1 st direction by using a 1 st drive system; and driving the projection optical system in the 1 st direction by using a 2 nd driving system separately and independently from the 1 st driving system.
The method for manufacturing a flat panel display according to claim 17 of the present invention comprises: exposure of the object by the exposure method of any one of the 1 st to 7 th exposure methods of the present invention, and development of the object after the exposure.
The device manufacturing method according to claim 18 of the present invention includes: exposure of the object by the exposure method of any one of the 1 st to 7 th exposure methods of the present invention, and development of the object after the exposure.
Drawings
Fig. 1 is a conceptual diagram of a liquid crystal exposure apparatus according to an embodiment.
FIG. 2 is a block diagram showing the input/output relationship of a main controller configured by centering on the control of the liquid crystal exposure apparatus of FIG. 1.
Fig. 3(a) to 3(d) are views (1 to 4) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation.
Fig. 4(a) to 4(c) are views (5 to 7) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation.
Fig. 5 is a diagram for explaining the configuration of the alignment system according to modification 1.
Fig. 6 is a diagram for explaining the configuration of the alignment system according to modification 2.
Fig. 7 is a diagram for explaining the configuration of the projection system main body and the measurement system of the alignment microscope.
Fig. 8 is a view showing a modification (1) of the projection optical system and the drive system of the alignment system.
Fig. 9 is a view showing a modification (2) of the projection optical system and the drive system of the alignment system.
Fig. 10 is a conceptual diagram showing module replacement in the liquid crystal exposure apparatus.
[ description of main element symbols ]
10: liquid crystal exposure apparatus 20: lighting system
30: mask stage device 40: projection optical system
50: substrate stage device 60: alignment system
M: mask P: substrate
Detailed Description
An embodiment will be described below with reference to fig. 1 to 7.
Fig. 1 shows a conceptual diagram of a liquid crystal exposure apparatus 10 according to an embodiment. The liquid crystal exposure apparatus 10 is a projection exposure apparatus of a step & scan system, a so-called scanner, in which a rectangular (square) glass substrate P (hereinafter simply referred to as a substrate P) used in, for example, a liquid crystal display device (flat panel display) is used as an exposure object.
The liquid crystal exposure apparatus 10 includes an illumination system 20 for irradiating illumination light IL as an exposure energy beam, and a projection optical system 40. Hereinafter, a direction parallel to the optical axis of the illumination light IL irradiated from the illumination system 20 to the substrate P through the projection optical system 40 will be referred to as a Z-axis direction, and X-axis and Y-axis orthogonal to each other in a plane orthogonal to the Z-axis will be set for explanation. In the coordinate system of the present embodiment, the Y axis is substantially parallel to the gravity direction. Thus, the XZ plane is substantially parallel to the horizontal plane. The rotation (inclination) direction around the Z axis is referred to as θ Z direction.
Here, in the present embodiment, a plurality of exposure target regions (appropriately called divisional regions or shot regions) are set on one substrate P, and a mask pattern is sequentially transferred to these plurality of shot regions. In the present embodiment, a case where 4 divisional areas are set on the substrate P (a case where 4 planes are taken) is explained, but the number of divisional areas is not limited thereto and may be changed as appropriate.
In the liquid crystal exposure apparatus 10, although the exposure operation of the so-called step-and-scan method is performed, during the scanning exposure operation, the mask M and the substrate P are substantially in a stationary state, and the illumination system 20 and the projection optical system 40 (illumination light IL) are moved in a long stroke in the X-axis direction (appropriately called the scanning direction) with respect to the mask M and the substrate P, respectively (see white arrows in fig. 1). In contrast, in the stepping operation performed to change the divisional areas to be exposed, the mask M is moved in steps in the X-axis direction by a predetermined stroke, and the substrate P is moved in steps in the Y-axis direction by a predetermined stroke (see the black arrows in fig. 1).
Fig. 2 is a block diagram showing the input/output relationship of the main controller 90 for overall controlling each component of the liquid crystal exposure apparatus 10. As shown in fig. 2, liquid crystal exposure apparatus 10 includes illumination system 20, mask stage device 30, projection optical system 40, substrate stage device 50, alignment system 60, and the like.
The illumination system 20 includes an illumination system main body 22 including a light source (for example, a mercury lamp) or the like of the illumination light IL (see fig. 1). In the scanning exposure operation, the main control device 90 controls the drive system 24 including, for example, a linear motor, to scan and drive the illumination system main body 22 in the X-axis direction by a predetermined long stroke. The main control device 90 obtains the position information of the illumination system main body 22 in the X-axis direction by the measurement system 26 including, for example, a linear encoder, and performs the position control of the illumination system main body 22 based on the position information. In the present embodiment, for example, g-line, h-line, i-line, or the like is used as the illumination light IL.
Mask stage device 30 includes a stage main body 32 that holds mask M. Stage body 32 can be moved in steps in the X-axis direction and the Y-axis direction as appropriate by a drive system 34 including, for example, a linear motor. When the X-axis direction is a stepping operation for changing the divisional area of the exposure target, main control device 90 controls drive system 34 to step stage main body 32 in the X-axis direction. As will be described later, when the Y-axis direction is a stepping operation of changing the area (position) to be subjected to scanning exposure in the divisional area to be exposed, main control device 90 controls drive system 34 to step stage main body 32 in the Y-axis direction. The drive system 34 can drive the mask M in the 3-degree-of-freedom (X, Y, θ z) direction in the XY plane in an appropriate minute manner during the alignment operation described later. The position information of the mask M is obtained by a measurement system 36 including a linear encoder, for example.
The projection optical system 40 includes a projection system main body 42 including an optical system for forming an erect positive image of a mask pattern on a substrate P (see FIG. 1) with an equal magnification. The projection system main body 42 is disposed in a space formed between the substrate P and the mask M (see fig. 1). In the scanning exposure operation, the main controller 90 controls the drive system 44 including, for example, a linear motor, to scan and drive the projection system main body 42 in the X-axis direction by a predetermined long stroke in synchronization with the illumination system main body 22. The main control device 90 obtains the position information of the projection system main body 42 in the X-axis direction by the measurement system 46 including, for example, a linear encoder, and performs the position control of the projection system main body 42 based on the position information.
Returning to fig. 1, in the liquid crystal exposure apparatus 10, when the illumination area IAM on the mask M is illuminated with the illumination light IL from the illumination system 20, a projection image (partial erected image) of the mask pattern in the illumination area IAM is formed on the substrate P at an illumination area (exposure area IA) of the illumination light IL conjugate to the illumination area IAM through the projection optical system 40 with the illumination light IL passing through the mask M. The illumination light IL (illumination area IAM and exposure area IA) is relatively moved in the scanning direction with respect to the mask M and the substrate P to perform a scanning exposure operation. That is, in the liquid crystal exposure apparatus 10, a pattern of the mask M is generated on the substrate P by the illumination system 20 and the projection optical system 40, and the pattern is formed on the substrate P by exposing the sensitive layer (resist layer) on the substrate P with the illumination light IL.
Here, in the present embodiment, the illumination area IAM generated on the mask M by the illumination system 20 includes a pair of rectangular areas separated in the Y-axis direction. The Y-axis direction length of one rectangular region is set to, for example, 1/4 set as the Y-axis direction length of the pattern surface of the mask M (that is, the Y-axis direction length of each divisional region set on the substrate P). The distance between the pair of rectangular regions is also set to 1/4, for example, which is the same as the length of the pattern surface of the mask M in the Y-axis direction. Therefore, exposure area IA formed on substrate P similarly includes a pair of rectangular areas separated in the Y-axis direction. In this embodiment, in order to completely transfer the pattern of the mask M to the substrate P, although the secondary scanning exposure operation is required for one divided region, there is an advantage that the illumination system main body 22 and the projection system main body 42 can be miniaturized. Specific examples of the scanning exposure operation will be described later.
Substrate stage device 50 includes a stage main body 52 for holding a back surface (a surface opposite to an exposure surface) of substrate P. Returning to fig. 2, when the stepping operation of the divisional area of the exposure target is changed in the Y-axis direction, main control device 90 controls drive system 54 including, for example, a linear motor or the like, and thereby step-drives stage main body 52 in the Y-axis direction. The drive system 54 can slightly drive the substrate P in the 3-degree-of-freedom (X, Y, θ z) direction in the XY plane during a substrate alignment operation described later. The positional information of substrate P (stage body 52) is obtained by a measurement system 56 including, for example, a linear encoder.
Returning to fig. 1, the alignment system 60 is provided with an alignment microscope 62. The alignment microscope 62 is disposed in a space formed between the substrate P and the mask M (a position between the substrate P and the mask M in the Z-axis direction), and detects an alignment mark Mk (hereinafter, simply referred to as a mark Mk) formed on the substrate P and a mark (not shown) formed on the mask M. In the present embodiment, 1 mark Mk (for 1 divisional area, for example, 4 marks) is formed near each of the four corners of each divisional area, and the mark of the mask M is formed at a position corresponding to the mark Mk through the projection optical system 40. The number and positions of the marks Mk and the marks of the mask M are not limited to these, and may be changed as appropriate. In addition, in each drawing, the mark Mk is shown to be actually larger for the sake of understanding.
The alignment microscope 62 is disposed on the + X side of the projection system main body 42. The alignment microscope 62 has a pair of detection fields (detection regions) separated in the Y-axis direction, and can simultaneously detect, for example, 2 marks Mk separated in the Y-axis direction in one divisional region.
The alignment microscope 62 can simultaneously (in other words, without changing the position of the alignment microscope 62) detect the mark formed on the mask M and the mark Mk formed on the substrate P. The main controller 90 obtains relative positional displacement information between the marks formed on the mask M and the marks Mk formed on the substrate P, and performs relative positioning between the substrate P and the mask M in the XY plane to correct the positional displacement (cancel or reduce) each time the mask M performs an X-step operation or a Y-step operation on the substrate P, for example. The alignment microscope 62 is integrally configured by a mask detecting unit that detects (observes) the mark of the mask M and a substrate detecting unit that detects (observes) the mark Mk of the substrate P, by a common housing or the like, and is driven by a drive system 66 through the common housing. Alternatively, the mask detecting unit and the substrate detecting unit may be constituted by separate cases, and in this case, it is preferable that the mask detecting unit and the substrate detecting unit are movable by substantially common drive system 66 with the same operation characteristics, for example.
The main controller 90 (see fig. 2) drives the alignment microscope 62 in the X-axis direction by a predetermined stroke by controlling the drive system 66 (see fig. 2) including, for example, a linear motor. The main controller 90 obtains position information of the alignment microscope 62 in the X-axis direction by the measurement system 68 including, for example, a linear encoder, and performs position control of the alignment microscope 62 based on the position information. In addition, the driving system 66 may also have, for example, a linear motor for driving the alignment microscope 62 in the Y-axis direction.
Here, although the alignment microscope 62 of the alignment system 60 and the projection system main body 42 of the projection optical system 40 are physically (mechanically) independent (separate) elements and are driven (speed and position) and controlled independently of each other by the main control device 90 (see fig. 2), the drive system 66 for driving the alignment microscope 62 and the drive system 44 for driving the projection system main body 42 share a part of, for example, a linear motor, a linear guide, and the like in the drive system in the X-axis direction, and the drive characteristics of the alignment microscope 62 and the projection system main body 42 and the control characteristics by the main control device 90 are substantially equal.
Specifically, for example, when the alignment microscope 62 and the projection system main body 42 are driven in the X-axis direction by a moving-coil linear motor, the drive system 66 and the drive system 44 share a fixed sub-magnetic body (e.g., a permanent magnet) unit. On the other hand, the movable sub-coil unit is provided independently of the alignment microscope 62 and the projection system main body 42, and the main control device 90 (see fig. 2) independently controls the driving (speed and position) of the alignment microscope 62 in the X-axis direction and the driving (speed and position) of the projection system main body 42 in the X-axis direction by individually supplying power to the coil units. Therefore, the main controller 90 can change (arbitrarily change) the distance (distance) between the alignment microscope 62 and the projection system main body 42 in the X-axis direction. In addition, the main controller 90 may move the alignment microscope 62 and the projection system main body 42 in the X-axis direction at different speeds.
The main controller 90 (see fig. 2) detects the plurality of marks Mk formed on the substrate P using the alignment microscope 62, and calculates arrangement information (including information on the positions (coordinate values) and shapes of the divisional areas) of the divisional areas where the marks Mk to be detected are formed, based on the detection result (position information of the plurality of marks Mk) by a known full wafer enhanced alignment (EGA) method.
Specifically, in the scanning exposure operation, the main controller 90 (see fig. 2) performs, before the scanning exposure operation, position detection of, for example, 4 marks Mk formed at least in a divisional area to be exposed using the alignment microscope 62 disposed on the + X side of the projection system main body 42, and calculates arrangement information of the divisional area. The main control device 90 performs a scanning exposure operation (transfer of a mask pattern) on the divided region of the object by appropriately controlling the illumination system 20 and the projection optical system 40 while performing a precise positioning (substrate alignment operation) of the substrate P in the 3-degree-of-freedom direction in the XY plane based on the calculated arrangement information of the divided region of the exposure object.
Next, a specific configuration of the measurement system 46 (see fig. 2) for obtaining the positional information of the projection system main body 42 of the projection optical system 40 and the measurement system 68 for obtaining the positional information of the alignment microscope 62 of the alignment system 60 will be described.
As shown in fig. 7, the liquid crystal exposure apparatus 10 has a guide 80 for guiding the projection system main body 42 in the scanning direction. The guide 80 is constituted by a member extending parallel to the scanning direction. The guide 80 also has a function of guiding the movement of the alignment microscope 62 in the scanning direction. Although the guide 80 is shown between the mask M and the substrate P in fig. 7, the guide 80 is actually disposed in a position avoiding the optical path of the illumination light IL in the Y-axis direction.
A scale 82 including at least a reflection-type diffraction grating having a periodic direction (X-axis direction) parallel to the scanning direction is fixed to the guide 80. The projection system main body 42 has a head 84 disposed opposite to the scale 82. In the present embodiment, an encoder system is formed in which the measurement system 46 (see fig. 2) for obtaining the positional information of the projection system main body 42 is configured by the scale 82 and the head 84. The alignment microscope 62 has a head 86 disposed to face the scale 82. In the present embodiment, an encoder system is formed in which the scale 82 and the head 86 constitute a measurement system 68 (see fig. 2) for obtaining positional information of the alignment microscope 62. The heads 84 and 86 can emit encoder measuring beams to the scale 82, receive beams transmitted through the scale 82 (reflected beams on the scale 82), and output relative position information on the scale 82 based on the light reception results.
As described above, in the present embodiment, the scale 82 constitutes the measurement system 46 (see fig. 2) for obtaining the positional information of the projection system main body 42 and also constitutes the measurement system 68 (see fig. 2) for obtaining the positional information of the alignment microscope 62. That is, the projection system main body 42 and the alignment microscope 62 are position-controlled based on a common coordinate system (longitudinal axis) set by a diffraction grating formed on the scale 82. The drive system 44 (see fig. 2) for driving the projection system main body 42 and the drive system 66 (see fig. 2) for driving the alignment microscope 62 may be partially common or may be completely independent.
The encoder systems constituting the measurement systems 46 and 68 (see fig. 2, respectively) may be linear (1DOF) encoder systems having only one longitudinal measurement axis, for example, in the X-axis direction (scanning direction), or may have a plurality of longitudinal measurement axes. For example, the rotation amount in the θ z direction of the projection system main body 42 and the alignment microscope 62 can be obtained by arranging a plurality of heads 84 and 86 at a predetermined interval in the Y axis direction. Further, a 3DOF encoder system may be used in which an XY 2-dimensional diffraction grating is formed on the scale 82 and has a longitudinal axis in the 3-degree-of-freedom direction of the X, Y and θ z directions. Further, a plurality of known 2-dimensional heads capable of measuring the length in the direction perpendicular to the scale surface in addition to the periodic direction of the diffraction grating may be used as the heads 84 and 86 to obtain the position information in the 6-degree-of-freedom direction of the projection system main body 42 and the alignment microscope 62.
Here, in the present embodiment, the projection system main body 42 and the alignment microscope 62 are respectively disposed in the space between the substrate P and the mask M, and since the positions in the Y-axis direction are almost the same, the movable ranges thereof partially overlap each other.
Therefore, for example, when the projection system main body 42 is driven in the X-axis direction during the scanning exposure operation, the main controller 90 performs drive control (collision avoidance control) for avoiding collision between the projection system main body 42 and the alignment microscope 62. In other words, the main controller 90 performs drive control such that the projection system main body 42 and the alignment microscope 62 are not simultaneously arranged at the same position in the X-axis direction, and performs, for example, retraction control for retracting the alignment microscope 62 from the movement path (movement range) of the projection system main body 42.
Hereinafter, an operation example of the liquid crystal exposure apparatus 10 including collision avoidance control (retraction control) of the alignment microscope 62 in the scanning exposure operation will be described with reference to fig. 3(a) to 4 (c). The following exposure operation (including the alignment measurement operation) is performed under the control of the main controller 90 (not shown in fig. 3 a to 4 c, see fig. 2).
In the present embodiment, the division region with the first exposure order (hereinafter referred to as the 1 st shot region S)1) Is thatSet on the-X side and the-Y side of the substrate P. In fig. 3 a to 4 c, the rectangular region given with the symbol a represents the moving range (moving path) of the projection system main body 42 during the scanning exposure operation. The moving range a of the projection system body 42 is set mechanically and/or electrically, for example. The symbol S given to the divisional area on the substrate P2～S4The exposure sequences represent the 2 nd to 4 th irradiation regions.
As shown in FIG. 3(a), before the exposure is started, the projection system main body 42 and the alignment microscope 62 are arranged in the 1 st irradiation region S in a plan view1the-X side of (1). In the state (initial position) shown in fig. 3 a, the projection system main body 42 and the alignment microscope 62 are disposed close to each other in the X-axis direction.
Next, as shown in fig. 3(b), the main controller 90 drives the alignment microscope 62 in the + X direction. As described above, in the present embodiment, since the projection system main body 42 and the alignment microscope 62 can be independently driven and controlled in the X-axis direction (scanning direction), the main control device 90 drives only the alignment microscope 62 in the X-axis direction in a state where the projection system main body 42 is stopped. The main controller 90 moves the alignment microscope 62 in the + X direction and detects (see the bold line circle in FIG. 3 (b)) the 1 st irradiation region S1After the 4 marks Mk, the main controller 90 calculates the 1 st irradiation area S based on the mark detection result1Arrangement information of the optical fiber.
As shown in fig. 3(c), the main controller 90 starts acceleration of the projection system main body 42 in the + X direction independently of the alignment microscope 62 in parallel with the mark detection operation using the alignment microscope 62. Specifically, the main controller 90 detects the 1 st irradiation region S with the alignment microscope 62, for example1Immediately before the mark Mk on the + X side, the acceleration of the projection system main body 42 in the + X direction is started. As described above, in the present embodiment, after the alignment microscope 62 is moved in the + X direction (mark detection operation), the projection system main body 42 is moved in the + X direction (scanning exposure operation). Therefore, the distance (distance) between the projection system main body 42 and the alignment microscope 62 in the X-axis direction is wider than the initial position (before the start of the alignment operation) shown in fig. 3 a. In addition, the air conditioner is provided with a fan,preferably in the 1 st irradiation region S1Before the exposure operation is started, that is, the projection system main body 42 starts moving at a constant speed, the illumination light IL is irradiated to the substrate P (the 1 st irradiation region S)1) Before that, the 1 st irradiation region S is ended1The detection of, for example, 4 markers Mk, and the 1 st illumination region S has been determined from the 4 markers1Arrangement information of the optical fiber. As shown in fig. 3d, the main control device 90 synchronously drives the projection system main body 42 and the illumination system main body 22 (not shown in fig. 3d, see fig. 1) of the illumination system 20 in the + X direction to perform the irradiation of the 1 st irradiation region S11 st scanning exposure.
Furthermore, the 1 st irradiation region S may be irradiated1In parallel with the scanning exposure operation, the alignment microscope 62 is further driven in the + X direction to detect the shot region S formed in the 4 th shot region S4(1 st irradiation region S1The + X side divisional area) of the marks Mk. A main control device 90 for controlling the irradiation area S according to the 4 th irradiation area4Updating the 1 st irradiation region S as a result of detection of the mark in the image1Arrangement information of the optical fiber. To find the 1 st irradiation area S1Using the arrangement information of the 4 th irradiation region S4Position information of the mark therein, and the mark is formed only on the 1 st shot region S1Compared with the case of obtaining the arrangement information by using the 4 marks Mk, the arrangement information considering the statistical tendency of the wider range can be obtained, and the 1 st irradiation region S can be improved1The alignment accuracy of (2).
The main control device 90 controls the illumination system 20 to project the illumination light IL onto the substrate P through the mask M (not shown in fig. 3d, see fig. 1) and the projection system main body 42 while performing fine position control of the substrate P in accordance with the calculation result of the arrangement information, and forms a part of a mask pattern in the exposure area IA generated on the substrate P with the illumination light IL. As described above, in the present embodiment, since illumination area IAM (see fig. 1) generated on mask M and exposure area IA generated on substrate P are a pair of rectangular areas separated in the Y axis direction, the pattern image of mask M transferred to substrate P by the one-time scanning exposure operation is formed in a pair of belt-like areas (half of the total area of one divided area) extending in the X axis direction separated in the Y axis direction.
Here, when the 1 st irradiation region S1When the 1 st scanning exposure is completed, the projection system main body 42 passes over the substrate P and moves to the vicinity of the + X side end of the movement range a. At this time, the main controller 90 performs control to retract the alignment microscope 62 from the movement range a. For example, as shown in fig. 4 a, the main controller 90 drives the alignment microscope 62 in the-Y direction (downward) with respect to the substrate P so as to retract to the-Y side of the movement range a of the projection system main body 42. Accordingly, as shown in fig. 4(b), the projection system main body 42 passes through the + Y side (upper side) of the alignment microscope 62 without colliding with the alignment microscope 62. When the main controller 90 confirms that the position in the Y-axis direction of the projection system main body 42 does not overlap the position in the Y-axis direction of the alignment microscope 62, that is, as shown in fig. 3(a), the alignment microscope 62 is driven within the movement range a so as to be disposed in close proximity to the position where the projection system main body 42 and the alignment microscope 62 do not contact each other. Therefore, the interval between the projection system main body 42 and the alignment microscope 62 in the X-axis direction is narrower before the start or after the end of the scanning exposure operation (in other words, before the start or after the end of acceleration of the projection system main body 42 in the X-axis direction) than in the scanning exposure operation.
Next, the main control device 90 performs the 1 st irradiation region S1The 2 nd scanning exposure operation of (1) moves the substrate P and the mask M stepwise in the-Y direction as shown in fig. 4(b) (see black arrows in fig. 4 (b)). The step movement amount of the substrate P at this time is, for example, 1/4, which is the length of one divisional area in the Y-axis direction. In this case, in the step movement of the substrate P and the mask M in the-Y direction, it is preferable that the step movement is performed so that the relative positional relationship between the substrate P and the mask M does not change (or so that the relative positional relationship can be corrected).
Thereafter, as shown in FIG. 4(b), the main control device 90 drives the projection system main body 42 in the-X direction to perform the 1 st irradiation region S1The 2 nd (multiplexing) scanning exposure operation. Accordingly, the mask pattern transferred by the 1 st scanning exposure operation and the mask pattern transferred by the 2 nd scanning exposure operation are in the 1 st shot region S1Bonded therein, and the pattern of the mask M is transferred to the 1 st shot region S1. The main controller 90 returns the alignment microscope 62 from the retracted position to the movement range a of the projection system main body 42, and drives the projection system main body 42 in the-X direction. As shown in fig. 4(b), after the substrate P and the mask M are moved in steps in the-Y direction, alignment measurement of the substrate P and the mask M may be performed again before the 2 nd scanning exposure is started, and alignment between the substrate P and the mask M may be performed based on the result. Thus, the 1 st irradiation region S can be raised1The whole alignment precision is improved, and the 1 st irradiation region S is further improved1The transfer accuracy of the pattern of the mask M. In this case, the main controller 90 preferably performs the operation corresponding to the operation shown in fig. 3(a) to 3(d) and 4(a) (however, the operation is an operation in which the operation in the X-axis direction is reversed (opposite sign)) by returning the alignment microscope 62, which is temporarily retracted, to the-X side of the projection system main body 42.
Hereinafter, although not shown, the main control device 90 controls the irradiation area 22(1 st irradiation region S1The + Y-side divisional area) and the substrate P is moved stepwise in the-Y direction to make the 2 nd shot area S2Opposite to the mask M. To the 2 nd irradiation region S2The scanning exposure operation (including the retracting operation of the alignment microscope 62) of (1) is performed in the above-described irradiation region S1The scanning exposure operation is the same, and therefore, the description thereof is omitted. Thereafter, the main controller 90 performs the irradiation of the 3 rd and 4 th irradiation regions S while appropriately performing at least one of the X-step operation of the mask M and the Y-step operation of the substrate P3、S4Scanning exposure operation. At this time, the main controller 90 also performs the retraction control of the alignment microscope 62 in the same manner. In addition, the 2 nd irradiation region S2In the subsequent exposure of the divided regions, the position information of the mark obtained in the previous exposure of the divided regions may be used in obtaining the arrangement information of the divided regions. In addition, the 4 th irradiation region S may be performed4Using the 1 st irradiation region S1Alignment measurement result (result of EGA calculation). In this case, the 4 th irradiation region S is set to be4And lightWhen the mask M is disposed to face each other, the 4 th irradiation region S can be substantially shortened by measuring the positional shift in the 3-degree-of-freedom (X, Y, θ z) direction in the XY plane from the marks of the mask M and the marks of the 2 points of the mark Mk of the substrate P4The time required for alignment.
According to the liquid crystal exposure apparatus 10 of the embodiment described above, since the drive control (position and speed) in the scanning direction (X-axis direction) of the alignment microscope 62 and the projection system main body 42 can be independently controlled, the alignment microscope 62 can be used to perform the detection operation of the marks Mk before the projection system main body 42 is moved (accelerated) in the scanning direction, and the acceleration of the projection system main body 42 in the scanning direction (that is, the scanning exposure operation) can be started before the detection of all the required marks Mk is completed. Therefore, a series of processing time (cycle time) required for the exposure processing of the substrate P can be reduced. When the scanning exposure operation is not performed, for example, before the start of the alignment operation (before the acceleration of the projection system main body 42) and after the end of the scanning exposure operation (after the deceleration of the projection system main body 42), the alignment microscope 62 may be disposed in proximity to the projection system main body 42 as shown in fig. 3 (a). Therefore, the device size (footprint of the exposure device) required for performing scanning exposure in the X-axis direction can be suppressed. Further, since the movement range a of the projection system main body 42 can be set during the exposure operation in which the alignment microscope 62 is retracted for scanning, collision between the alignment microscope 62 and the projection system main body 42 can be avoided.
Here, illumination system 20, mask stage device 30, projection optical system 40, substrate stage device 50, and alignment system 60 may be modularized. Hereinafter, illumination system 20, mask stage device 30, projection optical system 40, projection optical system module 16M, substrate stage device 50, substrate stage module 18M, and alignment system 60 are referred to as alignment system module 20M. Hereinafter, the modules 12M to 20M are appropriately referred to as "modules", but are placed on the corresponding stands 28A to 28E so as to be physically independent from each other.
Therefore, as shown in fig. 10, in liquid crystal exposure apparatus 10, any (1 or a plurality of) modules among modules 12M to 20M (in fig. 10, for example, substrate stage module 18M) can be replaced independently of the other modules. At this time, the module to be replaced is replaced integrally with the stages 28A to 28E (the stage 28E in fig. 10) supporting the module.
During the replacement operation of the modules 12M to 20M, the modules 12M to 20M to be replaced (and the stands 28A to 28E supporting the modules) move in the X-axis direction along the floor surface 26. Therefore, it is preferable that the stands 28A to 28E be provided with, for example, wheels or air-floating devices that can be easily moved on the floor surface 26. As described above, in the liquid crystal exposure apparatus 10 of the present embodiment, since any one of the modules 12M to 20M can be easily separated from the other modules individually, the maintenance and repair performance is excellent. In fig. 10, display substrate stage module 18M is moved in the + X direction (inside the paper surface) together with mount 28E with respect to the other elements (projection optical system module 16M and the like) so as to be separated from the other elements, but the moving direction of the moving object module (and mount) is not limited thereto, and may be, for example, the-X direction (in front of the paper surface) or the + Y direction (above the paper surface). Furthermore, a positioning device for ensuring the reproducibility of the position of each of the stands 28A to 28E after installation on the floor surface 26 may be provided. The positioning device may be provided on each of the stands 28A to 28E, or the positions of the stands 28A to 28E may be reproduced by the cooperative operation of members provided on the stands 28A to 28E and members provided on the floor surface 26.
In addition, since the liquid crystal exposure apparatus 10 of the present embodiment has a configuration in which the modules 12M to 20M can be independently separated, the modules 12M to 20M can be upgraded individually. The upgrade includes, for example, an upgrade for coping with an increase in size of the substrate P to be exposed, and also includes a case where the respective modules 12M to 20M are replaced with better performance although the size of the substrate P is the same.
Here, for example, when the substrate P is increased in size, only the area of the substrate P (in this embodiment, the dimensions in the X-axis and Y-axis directions) is increased, and the thickness of the substrate P (the dimension in the Z-axis direction) does not substantially change in general. Therefore, for example, when substrate stage module 18M of liquid crystal exposure apparatus 10 is upgraded in accordance with an increase in size of substrate P, as shown in fig. 10, substrate stage module 18AM and stage 28G supporting substrate stage module 18AM, which are newly inserted, change the size in the X-axis and/or Y-axis direction, but the size in the Z-axis direction does not substantially change. Similarly, the dimension of the mask stage module 14M in the Z-axis direction does not substantially change due to the upscaling of the mask M in accordance with the increase in size.
Further, for example, in order to enlarge illumination area IAM and exposure area IA (see fig. 1 and the like, respectively), illumination system module 12M and projection optical system module 16M can be upgraded by increasing the number of illumination optical systems included in illumination system module 12M and the number of projection lens modules included in projection optical system module 16M, respectively. In comparison with the illumination system module and the projection optical system module (both not shown) before the upgrade, the dimensions in the X-axis and/or Y-axis direction are changed, and the dimensions in the Z-axis direction are not substantially changed.
Therefore, in liquid crystal exposure apparatus 10 of the present embodiment, the dimensions in the Z-axis direction are fixed by stages 28A to 28E that support respective modules 12M to 20M and a stage that supports the respective modules after the upgrade (see stage 28G that supports substrate stage module 18AM shown in fig. 10). Here, the term "fixed size" means that the mount before replacement and the mount after replacement have the same size in the Z-axis direction, that is, the mount of the module having the same support function has a substantially constant size in the Z-axis direction. As described above, in the liquid crystal exposure apparatus 10 of the present embodiment, since the dimension of each of the stages 28A to 28E in the Z-axis direction is fixed, the time required for designing each module can be shortened.
In the liquid crystal exposure apparatus 10, since the exposure surface of the substrate P and the pattern surface of the mask M are parallel to the direction of gravity (so-called vertical arrangement), the illumination system module 12M, the mask stage module 14M, the projection optical system module 16M, and the substrate stage module 18M can be arranged in series on the floor surface 26. Since the modules do not act on each other by their own weight, it is not necessary to provide a high-rigidity main frame (body) for supporting the elements, as in a conventional exposure apparatus in which a substrate stage device, a projection optical system, a mask stage device, and illumination, which correspond to the modules, are arranged in a manner overlapping in the direction of gravity, for example. Further, the structure is simple, and the installation work of the apparatus, the maintenance work of each of the modules 12M to 20M, the replacement work, and the like can be easily performed in a short time. Further, since the modules are arranged along the floor surface 26, the overall height of the apparatus can be reduced. Thus, the chamber for accommodating the modules can be miniaturized, the cost can be reduced, and the installation period can be shortened.
The configuration of the embodiment described above can be changed as appropriate. For example, in the above embodiment, the alignment microscope 62 is moved to the-Y side with respect to the movement range a of the projection system main body 42 to perform the retracting operation, but the retracting direction of the alignment microscope 62 is not limited to this as long as it can retract to the outside of the movement range a of the projection system main body 42, and for example, as in the 1 st modification shown in fig. 5, it may retract in the direction (X-axis direction) parallel to the scanning direction with respect to the movement range a of the projection system main body 42. Similarly, although not shown, the retreat direction of the alignment microscope 62 may be, for example, the + Y (upper) side, the + Z side (mask side), or the-Z side (substrate side) with respect to the movement range a of the projection system main body 42.
In the above-described embodiment (and modification 1), the alignment microscope 62 is moved in the direction orthogonal to or parallel to the direction of travel of the projection system main body 42 to perform the retracting operation, but the moving direction of the alignment microscope 62 during the retracting operation is not limited thereto, and may be, for example, the θ z direction (or other rotational direction) as in modification 2 shown in fig. 6. In addition, when the control for retracting the alignment microscope 62 in the direction other than the X-axis direction is performed, the relative positional relationship between the projection system main body 42 and the alignment microscope 62 in the Y-axis direction may be different from the initial position. In this case, the main controller 90 preferably performs calibration of the relative position (relative coordinates) between the projection system main body 42 and the alignment microscope 62 every time the retracting operation of the alignment microscope 62 is performed. In the above-described embodiment (and modification 1), the avoidance control of the alignment microscope 62 is performed not at the position on the substrate P, but may be performed at the position on the substrate P, that is, at the position where the Y-axis direction position and the X-axis direction position of the alignment microscope 62 overlap with the Y-axis direction position and the X-axis direction position of the substrate P.
In the above-described embodiment (and modifications 1 and 2), although the description has been made on the case where drive system 24 for driving illumination system main body 22 of illumination system 20, drive system 34 for driving stage main body 32 of mask stage device 30, drive system 44 for driving projection optical system main body 42 of projection optical system 40, drive system 54 for driving stage main body 52 of substrate stage device 50, and drive system 66 (see fig. 2, respectively) for driving alignment microscope 62 of alignment system 60 are linear motors, however, the types of actuators for driving illumination system main body 22, stage main body 32, projection optical system main body 42, stage main body 52, and alignment microscope 62 are not limited to these, various actuators such as a feed screw (ball screw) device and a belt drive device can be used as appropriate.
In the above-described embodiment (and 1 st and 2 nd modifications), the projection system main body 42 and the alignment microscope 62 share a part of the drive system (for example, a linear motor, a guide, or the like) in the scanning direction, but the present invention is not limited thereto as long as the projection system main body 42 and the alignment microscope 62 can be driven individually, and the drive system 66 for driving the alignment microscope 62 and the drive system 44 for driving the projection system main body 42 of the projection optical system 40 may be configured to be completely independent. That is, as in the exposure apparatus 10A shown in fig. 8, the projection optical system main body 42 of the projection optical system 40A and the alignment microscope 62 of the alignment system 60A are arranged so that the Y positions do not overlap each other, and the drive system 66 (including, for example, a linear motor, a guide, and the like) for driving the alignment microscope 62 and the drive system 44 (including, for example, a linear motor, a guide, and the like) for driving the projection optical system main body 42 can be completely independent from each other. In this case, the alignment measurement of the divisional area to be exposed is performed by stepping (reciprocating) the substrate P in the Y-axis direction before the start of the scanning exposure operation of the divisional area. As in the exposure apparatus 10B shown in fig. 9, the drive system 44 and the drive system 66 may be configured to be completely independent from each other by disposing the drive system 44 (including, for example, a linear motor, a guide, and the like) for driving the projection optical system main body 42 included in the projection optical system 40B and the drive system 66 (including, for example, a linear motor, a guide, and the like) for driving the alignment microscope 62 included in the alignment system 60B so that the Y positions do not overlap.
In the above-described embodiment (and modifications 1 and 2), although the description has been given of the case where measurement system 26 for performing position measurement of illumination system main body 22 of illumination system 20, measurement system 36 for performing position measurement of stage main body 32 of mask stage device 30, measurement system 46 for performing position measurement of projection optical system main body 42 of projection optical system 40, measurement system 56 for performing position measurement of stage main body 52 of substrate stage device 50, and measurement system 68 (each see fig. 2) for performing position measurement of alignment microscope 62 of alignment system 60 are all linear encoders, the types of measurement systems for performing position measurement of illumination system main body 22, stage main body 32, projection optical system main body 42, stage main body 52, and alignment microscope 62 are not limited to this, and may be changed as appropriate, for example, various measurement systems such as an optical interferometer and a measurement system using a linear encoder and an optical interferometer in combination can be suitably used.
In the above-described embodiment (and 1 st and 2 nd modifications), the pair of movable alignment microscopes 62 having the pair of detection fields of view is arranged on the + X side of the projection system main body 42, but the number of the movable alignment microscopes is not limited to this. For example, the alignment microscopes 62 may be disposed on the + X side and the-X side (one side and the other side in the scanning direction) of the projection system main body 42, respectively. In this case, by detecting the mark Mk using the alignment microscope 62 on the-X side before the 2 nd scanning exposure operation (that is, the scanning exposure operation performed by moving the projection system main body 42 in the-X direction) is performed on each divisional area, the 1 st shot area S can be increased while suppressing time loss1The overall alignment accuracy, and thus the pattern of the mask M, is improved for the 1 st shot region S1The transfer accuracy of (2).
In the above-described embodiment (and the following description including the modifications), the irradiation region S is set to the 1 st irradiation region S1After the scanning exposure, the setting is performed in the 1 st irradiation region S1The 2 nd irradiation region S on the + Y (upper) side of2The scanning exposure of (1) can be performed in the irradiation region S1Next to the scanning exposure, the 4 th irradiation region S is performed4Scanning exposure. In the case of this situation, the first and second,for example, by a mask facing the 1 st irradiation region S1 and the 4 th irradiation region S4The use of the opposite masks (2 masks in total) can continuously proceed the 1 st and 4 th irradiation regions S1、S4Scanning exposure. In addition, the 1 st irradiation region S1After the scanning exposure, the mask M is moved in steps in the + X direction to perform the 4 th shot region S4Scanning exposure.
In the above-described embodiment, the mark Mk is formed in each of the divisional areas (the 1 st to 4 th irradiation areas S)1～S4) But not limited thereto, may be formed in a region between adjacent divided regions (so-called scribe lines).
In the above-described embodiment, the pair of illumination areas IAM and exposure areas IA separated in the Y-axis direction are formed on the mask M and the substrate P, respectively (see fig. 1), but the shapes and lengths of the illumination areas IAM and exposure areas IA are not limited thereto, and may be changed as appropriate. For example, the Y-axis direction lengths of illumination area IAM and exposure area IA may be equal to the Y-axis direction lengths of the pattern surface of mask M and one divided area on substrate P, respectively. In this case, the transfer of the mask pattern is completed by performing the scanning exposure operation once for each divisional area. Alternatively, illumination area IAM and exposure area IA may be one area whose Y-axis direction length is half the Y-axis direction length of one divided area on the pattern surface of mask M and substrate P, respectively. In this case, as in the above-described embodiment, it is necessary to perform the joint exposure by performing the secondary scanning exposure operation on one divisional area.
Further, as in the above-described embodiment, when the projection system main body 42 is reciprocated to perform the junction exposure in order to form one mask pattern in the divisional area, the forward and backward alignment microscopes having different detection fields may be arranged in the front and rear of the projection system main body 42 in the scanning direction (X direction). In this case, the marks Mk at the four corners of the divided region can be detected by using the alignment microscope for the forward path (1 st exposure operation), and the marks Mk near the joint can be detected by using the alignment microscope for the backward path (2 nd exposure operation). Here, the joint portion is a joint portion between a region exposed by the scanning exposure of the forward path (a region to which a pattern is transferred) and a region exposed by the scanning exposure of the backward path (a region to which a pattern is transferred). The mark Mk near the joint may be formed on the substrate P in advance, or may be an exposed pattern.
In each of the above embodiments, the wavelength of the light source used in the illumination system 20 and the illumination light IL emitted from the light source are not particularly limited, and may be, for example, ultraviolet light such as ArF excimer laser light (wavelength 193nm) and KrF excimer laser light (wavelength 248nm), or vacuum ultraviolet light such as F2 laser light (wavelength 157 nm).
In the above-described embodiment, the illumination system main body 22 including the light source is driven in the scanning direction, but the present invention is not limited thereto, and the light source may be fixed and only the illumination light IL may be scanned in the scanning direction, as in the exposure apparatus disclosed in, for example, japanese patent application laid-open No. 2000-12422.
Further, illumination area IAM and exposure area IA are formed in a band shape extending in the Y axis direction in the above embodiment, but the present invention is not limited thereto, and a plurality of areas arranged in a zigzag shape may be combined as disclosed in, for example, U.S. Pat. No. 5,729,331.
In the above embodiments, the mask M and the substrate P are arranged to be orthogonal to the horizontal plane (so-called column arrangement), but the present invention is not limited thereto, and the mask M and the substrate P may be arranged to be parallel to the horizontal plane. In this case, the optical axis of the illumination light IL is substantially parallel to the gravity direction.
Further, while the fine positioning of the substrate P in the XY plane is performed based on the result of the alignment measurement during the scanning exposure operation, the surface position information of the substrate P may be obtained prior to (or in parallel with) the scanning exposure operation, and the surface position control of the substrate P may be performed during the scanning exposure operation (so-called auto focus control).
The exposure apparatus is not limited to an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern to a square glass plate, and can be widely applied to an exposure apparatus for manufacturing an organic EL (Electro-Luminescence) panel, an exposure apparatus for manufacturing a semiconductor, and an exposure apparatus for manufacturing a thin film magnetic head, a micromachine, a DNA chip, and the like. In addition, the present invention is applicable not only to microdevices such as semiconductor devices, but also to exposure apparatuses that transfer a circuit pattern onto a glass substrate, a silicon wafer, or the like, in order to manufacture a mask or a reticle used in a light exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, or the like.
The object to be exposed is not limited to a glass plate, but may be another object such as a wafer, a ceramic substrate, a film member, or a mask master. When the exposure target is a substrate for a flat panel display, the thickness of the substrate is not particularly limited, and examples thereof include a sheet (a sheet member having flexibility). The exposure apparatus of the present embodiment is particularly effective when the object to be exposed is a substrate having a side length or diagonal length of 500mm or more. In the case where the substrate to be exposed is a flexible sheet (sheet), the sheet may be formed into a roll shape. In this case, the divisional area of the exposure target can be easily changed (moved in steps) with respect to the illumination area (illumination light) by rotating (winding) the drum without depending on the stepping operation of the stage device.
Electronic devices such as liquid crystal display devices (or semiconductor devices) are manufactured through a step of designing functions and performances of the devices, a step of fabricating a mask (or reticle) based on the designing step, a step of fabricating a glass substrate (or wafer), a photolithography step of transferring a mask (reticle) pattern to the glass substrate by the exposure apparatus and the exposure method thereof of each of the embodiments, a development step of developing the exposed glass substrate, an etching step of removing exposed members except for portions where the photoresist remains by etching, a photoresist removal step of removing unnecessary photoresist after etching, a device assembly step, an inspection step, and the like. In this case, since the exposure method is performed using the exposure apparatus of the above embodiment in the photolithography step to form the device pattern on the glass substrate, a device with high integration can be manufactured with good productivity.
Industrial applicability
As described above, the exposure apparatus and method of the present invention are suitable for scanning exposure of an object. The method for manufacturing the flat panel display is suitable for producing the flat panel display. Furthermore, the component manufacturing method of the present invention is suitable for the production of microcomponents.

Claims (48)

1. An exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask without passing through the projection optical system;
a 1 st drive system for driving the mark detection part;
a 2 nd drive system for driving the projection optical system; and
a control device for controlling the 1 st and 2 nd driving systems to prevent the projection optical system and the mark detection portion from contacting each other;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control device controls the 1 st and 2 nd driving systems to drive the 2 nd detecting device to the one side of the 2 nd divisional area without contacting the projection optical system while driving the projection optical system to the one side according to a detection result of the mark formed on the object detected by the 1 st detecting device in the scanning exposure of the 1 st divisional area.
2. An exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask without passing through the projection optical system;
a 1 st drive system for driving the mark detection part;
a 2 nd drive system for driving the projection optical system; and
a control device for controlling at least one of the 1 st and 2 nd driving systems so that the projection optical system and the mark detection unit are spaced apart from each other by a predetermined distance or more when at least one of the projection optical system and the mark detection unit is driven during the scanning exposure;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control device controls the 1 st and 2 nd driving systems to drive the 2 nd detecting device to the one side of the 2 nd divisional area without contacting the projection optical system while driving the projection optical system to the one side according to a detection result of the mark formed on the object detected by the 1 st detecting device in the scanning exposure of the 1 st divisional area.
3. An exposure apparatus for performing a scanning exposure operation by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask without passing through the projection optical system;
a 1 st drive system for driving the mark detection part;
a 2 nd drive system for driving the projection optical system; and
a control device for controlling the 1 st and 2 nd driving systems to drive the projection optical system and the mark detection unit at different driving speeds, respectively, during at least part of the scanning exposure operation;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control device controls the 1 st and 2 nd driving systems to drive the 2 nd detecting device to the one side of the 2 nd divisional area without contacting the projection optical system while driving the projection optical system to the one side according to a detection result of the mark formed on the object detected by the 1 st detecting device in the scanning exposure of the 1 st divisional area.
4. An exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask without passing through the projection optical system;
a 1 st drive system for driving the mark detection part;
a 2 nd drive system for driving the projection optical system; and
a control device for controlling the 1 st and 2 nd driving systems to stop the driving of the projection optical system at a stop position not overlapping with the stop position at which the mark detection unit stops driving;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control device controls the 1 st and 2 nd driving systems to drive the 2 nd detecting device to the one side of the 2 nd divisional area without contacting the projection optical system while driving the projection optical system to the one side according to a detection result of the mark formed on the object detected by the 1 st detecting device in the scanning exposure of the 1 st divisional area.
5. An exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask without passing through the projection optical system;
a 1 st drive system for driving the mark detection part;
a 2 nd drive system for driving the projection optical system; and
a control device for controlling the 1 st and 2 nd driving systems so that the driving start timing of the projection optical system is different from the driving start timing of the mark detection unit;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control device controls the 1 st and 2 nd driving systems to drive the 2 nd detecting device to the one side of the 2 nd divisional area without contacting the projection optical system while driving the projection optical system to the one side according to a detection result of the mark formed on the object detected by the 1 st detecting device in the scanning exposure of the 1 st divisional area.
6. An exposure apparatus for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object; and
a control device for controlling the position of the projection optical system and the mark detection unit so that the relative positional relationship therebetween is not changed during the scanning exposure;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control device controls the 1 st and 2 nd driving systems to drive the 2 nd detecting device to the one side of the 2 nd divisional area without contacting the projection optical system while driving the projection optical system to the one side according to a detection result of the mark formed on the object detected by the 1 st detecting device in the scanning exposure of the 1 st divisional area.
7. The exposure apparatus according to any one of claims 1 to 6, wherein the control device controls the 1 st and 2 nd driving systems to drive the projection optical system to the other side based on a detection result of the mark formed on the object detected by the 2 nd detection device in the scanning exposure of the 2 nd divisional area.
8. The exposure apparatus according to any one of claims 1 to 6, wherein the control device makes the interval between the projection optical system and the mark detection section different between a 1 st state in which the scanning exposure is performed and a 2 nd state in which the illumination light is not applied to the object before or after the start of the scanning exposure.
9. The exposure apparatus according to claim 8, wherein the interval in the 1 st state is wider than the interval in the 2 nd state.
10. The exposure apparatus according to claim 8, wherein the projection optical system and the mark detection section in the 2 nd state are located at positions not overlapping with the object in a direction parallel to an optical axis of the projection optical system.
11. The exposure apparatus according to any one of claims 1 to 6, wherein the mark detection section is driven in a range that does not overlap with a part of a driving possible range of the projection optical system.
12. The exposure apparatus according to claim 11, wherein the mark detection section is driven in a wider range than the possible driving range.
13. The exposure apparatus according to any one of claims 1 to 6, wherein the control device controls a mark detection operation including an operation of detecting a mark formed on the object, in parallel with at least a part of a scanning exposure operation including the scanning exposure.
14. The exposure apparatus according to claim 13, wherein the mark detection operation includes an operation in which the mark detection section moves to a position where a mark formed on the object is detected;
the scanning exposure operation includes a movement operation of the projection optical system before the scanning exposure is started.
15. The exposure apparatus according to any one of claims 1 to 6, wherein the control device retreats the mark detection section from any one of a movable possible range of the scanning direction in which the projection optical system is driven and a direction intersecting the scanning direction.
16. The exposure apparatus according to claim 15 wherein the control device rotates the mark detection section about an axis parallel to the optical axis of the projection optical system so as to retreat from the movable range of the projection optical system.
17. The exposure apparatus according to any one of claims 1 to 6, wherein the mark detection section is configured to detect a mark in which a distance between a plurality of marks formed on the object in a direction intersecting the scanning direction is longer than a length of a region irradiated with the illumination light.
18. The exposure apparatus according to claim 17, wherein the object has 1 st and 2 nd divisional areas arranged in a direction intersecting the scanning direction;
the mark detection section is provided to simultaneously detect at least 1 mark formed on the 1 st divided region and at least 1 mark formed on the 2 nd divided region in the 2 nd direction.
19. The exposure apparatus according to any one of claims 1 to 6, wherein an optical axis of the projection optical system is parallel to a horizontal plane;
the object is disposed in a state where an exposure surface irradiated with the illumination light is orthogonal to the horizontal plane.
20. The exposure apparatus according to claim 19, wherein the mark detection section and the projection optical system are disposed so as to be separable from each other.
21. The exposure apparatus according to any one of claims 1 to 6, wherein the object is a substrate for a flat panel display device.
22. The exposure apparatus according to claim 21, wherein at least one side or diagonal of the substrate has a length of 500mm or more.
23. A method for manufacturing a flat panel display, comprising:
exposure of the object using the exposure apparatus according to any one of claims 1 to 22; and
and developing the exposed object.
24. A method for manufacturing a device, comprising:
exposure of the object using the exposure apparatus according to any one of claims 1 to 22; and
and developing the exposed object.
25. An exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask, the mark detection unit being not transparent to the projection optical system;
driving the mark detection unit using a 1 st drive system;
driving the projection optical system using a 2 nd drive system; and
control of the 1 st and 2 nd drive systems so that the projection optical system and the mark detection section do not contact each other;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control is to control the 1 st and 2 nd driving systems so that the projection optical system is driven to the one side and the 2 nd detecting device is driven to the one side of the 2 nd divisional area without contacting the projection optical system based on a detection result of the mark formed on the object detected by the 1 st detecting device during the scanning exposure of the 1 st divisional area.
26. An exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask, the mark detection unit being not transparent to the projection optical system;
driving the mark detection unit using a 1 st drive system;
driving the projection optical system using a 2 nd drive system; and
control of at least one of the 1 st and 2 nd drive systems in such a manner that the distance between the projection optical system and the mark detection unit is not less than a predetermined distance when at least one of the projection optical system and the mark detection unit is driven during the scanning exposure;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control is to control the 1 st and 2 nd driving systems so that the projection optical system is driven to the one side and the 2 nd detecting device is driven to the one side of the 2 nd divisional area without contacting the projection optical system based on a detection result of the mark formed on the object detected by the 1 st detecting device during the scanning exposure of the 1 st divisional area.
27. An exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask, the mark detection unit being not transparent to the projection optical system;
driving the mark detection unit using a 1 st drive system;
driving the projection optical system using a 2 nd drive system; and
control of the 1 st and 2 nd driving systems in such a manner that the projection optical system and the mark detection section are driven at different driving speeds during at least part of the scanning exposure operation;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control is to control the 1 st and 2 nd driving systems so that the projection optical system is driven to the one side and the 2 nd detecting device is driven to the one side of the 2 nd divisional area without contacting the projection optical system based on a detection result of the mark formed on the object detected by the 1 st detecting device during the scanning exposure of the 1 st divisional area.
28. An exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask, the mark detection unit being not transparent to the projection optical system;
driving the mark detection unit using a 1 st drive system;
driving the projection optical system using a 2 nd drive system; and
control of the 1 st and 2 nd drive systems so that a stop position at which driving of the projection optical system is stopped does not overlap a stop position at which driving of the mark detection unit is stopped;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control is to control the 1 st and 2 nd driving systems so that the projection optical system is driven to the one side and the 2 nd detecting device is driven to the one side of the 2 nd divisional area without contacting the projection optical system based on a detection result of the mark formed on the object detected by the 1 st detecting device during the scanning exposure of the 1 st divisional area.
29. An exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
a mark detection unit for detecting a mark formed on the object and a mark formed on the mask, the mark detection unit being not transparent to the projection optical system;
driving the mark detection unit using a 1 st drive system;
driving the projection optical system using a 2 nd drive system; and
control of the 1 st and 2 nd driving systems so that the driving start timing of the projection optical system is different from the driving start timing of the mark detection unit;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control is to control the 1 st and 2 nd driving systems so that the projection optical system is driven to the one side and the 2 nd detecting device is driven to the one side of the 2 nd divisional area without contacting the projection optical system based on a detection result of the mark formed on the object detected by the 1 st detecting device during the scanning exposure of the 1 st divisional area.
30. An exposure method for performing scanning exposure by irradiating an object with illumination light through a projection optical system and driving the projection optical system with respect to the object, comprising:
detecting a mark formed on the object by using a mark detecting section; and
controlling the position of the projection optical system and the position of the mark detection section so that the relative positional relationship therebetween is not changed during the scanning exposure;
the object has at least 1 st and 2 nd divisional areas that are different in position;
a mark detection unit having a 1 st detection device provided on one side of the projection optical system and a 2 nd detection device provided on the other side of the projection optical system in a scanning direction in which the projection optical system is driven with respect to the object;
the control is to control the 1 st and 2 nd driving systems so that the projection optical system is driven to the one side and the 2 nd detecting device is driven to the one side of the 2 nd divisional area without contacting the projection optical system based on a detection result of the mark formed on the object detected by the 1 st detecting device during the scanning exposure of the 1 st divisional area.
31. The exposure method according to any one of claims 25 to 30, wherein the control controls the 1 st and 2 nd driving systems to drive the projection optical system to the other side based on a detection result of the mark formed on the object detected by the 2 nd detection device in the scanning exposure of the 2 nd divisional area.
32. The exposure method according to any one of claims 25 to 30, wherein the control is such that the interval between the projection optical system and the mark detection section is made different between a 1 st state in which the scanning exposure is performed and a 2 nd state in which the illumination light is not irradiated to the object before or after the start or end of the scanning exposure.
33. The exposure method according to claim 32, wherein the interval in the 1 st state is wider than the interval in the 2 nd state.
34. The exposure method according to claim 32, wherein the projection optical system and the mark detection section in the 2 nd state are located at positions not overlapping with the object in a direction parallel to an optical axis of the projection optical system.
35. The exposure method according to any one of claims 25 to 30, wherein the mark detection section is driven in a range that does not overlap with a part of a driving possible range of the projection optical system.
36. The exposure method according to claim 35, wherein the mark detection section is driven over a wider range than the possible driving range.
37. The exposure method according to any one of claims 25 to 30, wherein the control is performed in parallel with at least a part of a mark detection operation including an operation of detecting a mark formed on the object and a scanning exposure operation including the scanning exposure.
38. The exposure method according to claim 37, wherein the mark detection operation includes an operation in which the mark detection section moves to a position where a mark formed on the object is detected;
the scanning exposure operation includes a movement operation of the projection optical system before the scanning exposure is started.
39. The exposure method according to any one of claims 25 to 30, wherein the control is such that the mark detection section is retracted from any one of the scanning direction in which the projection optical system is driven and a direction intersecting the scanning direction.
40. The exposure method according to claim 39, wherein in the control, the mark detection section is rotated about an axis parallel to an optical axis of the projection optical system so as to retreat from the movable range of the projection optical system.
41. The exposure method according to any one of claims 25 to 30, wherein the mark detection section is configured to detect a mark in which a distance between a plurality of marks formed on the object in a direction intersecting the scanning direction is longer than a length of a region irradiated with the illumination light.
42. The exposure method according to claim 41, wherein the object has 1 st and 2 nd divisional areas arranged in a direction intersecting the scanning direction;
the mark detection section is provided to simultaneously detect at least 1 mark formed on the 1 st divided region and at least 1 mark formed on the 2 nd divided region in the 2 nd direction.
43. The exposure method according to any one of claims 25 to 30, wherein an optical axis of the projection optical system is parallel to a horizontal plane;
the object is disposed in a state where an exposure surface irradiated with the illumination light is orthogonal to the horizontal plane.
44. The exposure method according to claim 43, wherein the mark detection section and the projection optical system are disposed so as to be separable from each other.
45. The exposure method according to any one of claims 25 to 30, wherein the object is a substrate for a flat panel display device.
46. The exposure method according to claim 45, wherein the length of at least one side or the diagonal length of the substrate is 500mm or more.
47. A method for manufacturing a flat panel display, comprising:
exposure of the object using the exposure method according to any one of claims 25 to 46; and
and developing the exposed object.
48. A method for manufacturing a device, comprising:
exposure of the object using the exposure method according to any one of claims 25 to 46; and
and developing the exposed object.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101738873A (en) * 2008-11-10 2010-06-16 优志旺电机株式会社 Exposure device
CN101738882A (en) * 2008-11-14 2010-06-16 优志旺电机株式会社 Alignment mark detecting method and apparatus
JP2013200506A (en) * 2012-03-26 2013-10-03 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
CN104024943A (en) * 2012-01-06 2014-09-03 V科技股份有限公司 Light exposure device and method for manufacturing exposed material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4029181B2 (en) * 1996-11-28 2008-01-09 株式会社ニコン Projection exposure equipment
JP2000012422A (en) 1998-06-18 2000-01-14 Nikon Corp Aligner
JP4172204B2 (en) * 2002-05-22 2008-10-29 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
TW201806001A (en) * 2003-05-23 2018-02-16 尼康股份有限公司 Exposure device and device manufacturing method
US7804582B2 (en) * 2006-07-28 2010-09-28 Asml Netherlands B.V. Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method
JP2013015761A (en) * 2011-07-06 2013-01-24 Topcon Corp Exposure device
CN103858208B (en) * 2011-08-10 2016-08-24 株式会社V技术 The alignment device of exposure device and alignment mark
JP6082884B2 (en) * 2012-06-12 2017-02-22 サンエー技研株式会社 Exposure apparatus and exposure method
US9269537B2 (en) * 2013-03-14 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. E-beam lithography with alignment gating

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101738873A (en) * 2008-11-10 2010-06-16 优志旺电机株式会社 Exposure device
CN101738882A (en) * 2008-11-14 2010-06-16 优志旺电机株式会社 Alignment mark detecting method and apparatus
CN104024943A (en) * 2012-01-06 2014-09-03 V科技股份有限公司 Light exposure device and method for manufacturing exposed material
JP2013200506A (en) * 2012-03-26 2013-10-03 Nikon Corp Exposure apparatus, exposure method and device manufacturing method

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