TW202040809A - Transparent light emitting device display - Google Patents

Transparent light emitting device display Download PDF

Info

Publication number
TW202040809A
TW202040809A TW109108675A TW109108675A TW202040809A TW 202040809 A TW202040809 A TW 202040809A TW 109108675 A TW109108675 A TW 109108675A TW 109108675 A TW109108675 A TW 109108675A TW 202040809 A TW202040809 A TW 202040809A
Authority
TW
Taiwan
Prior art keywords
transparent
emitting device
light
film
adhesive layer
Prior art date
Application number
TW109108675A
Other languages
Chinese (zh)
Other versions
TWI761789B (en
Inventor
李基碩
李建錫
李承憲
Original Assignee
南韓商Lg化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商Lg化學股份有限公司 filed Critical 南韓商Lg化學股份有限公司
Publication of TW202040809A publication Critical patent/TW202040809A/en
Application granted granted Critical
Publication of TWI761789B publication Critical patent/TWI761789B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04Polyurethanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04Polysiloxanes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A transparent light emitting device display according to an exemplary embodiment of the present application comprises: a transparent substrate; a conductive metal pattern provided on the transparent substrate; a light emitting device provided on at least a part of the conductive metal pattern; a first transparent adhesive layer provided on the transparent substrate, the conductive metal pattern, and the light emitting device; a UV-cut film provided on the first transparent adhesive layer; and a second transparent adhesive layer provided on the UV-cut film.

Description

透明發光裝置顯示器Transparent light emitting device display

本申請案主張於2019年3月27日在韓國智慧財產局提出申請的韓國專利申請案第10-2019-0035155號的優先權及權利,所述韓國專利申請案的全部內容併入本案供參考。This application claims the priority and rights of the Korean patent application No. 10-2019-0035155 filed with the Korean Intellectual Property Office on March 27, 2019. The entire content of the Korean patent application is incorporated into this case for reference. .

本申請案是有關於一種透明發光裝置顯示器。This application relates to a transparent light-emitting device display.

近來,韓國已藉由結合先進的資訊通訊(information and communication technology,ICT)技術及發光二極體(light emitting diode,LED)技術在公園及市中心創建豪華的廣告牌及各種景觀照明而為城市居民提供了資訊及具有吸引力的事物。具體而言,使用氧化銦錫(indium tin oxide,ITO)透明電極材料的透明LED顯示器為其中LED被施加在玻璃與玻璃之間、或者施加有LED的透明膜被貼附至玻璃的一個表面的顯示器,並且具有如下優點:由於電線是不可見的,因此可具有豪華的外觀。出於此種原因,已將透明LED顯示器用於酒店、百貨商店等的室內,並且其在達成建築物外牆上的媒體立面(media facade)方面的重要性正在增加。Recently, South Korea has become a city by combining advanced information and communication technology (ICT) technology and light emitting diode (LED) technology to create luxurious billboards and various landscape lighting in parks and downtowns. Residents provided information and attractive things. Specifically, a transparent LED display using indium tin oxide (ITO) transparent electrode material is one in which an LED is applied between glass and glass, or a transparent film applied with an LED is attached to one surface of the glass Display, and has the following advantages: Since the wires are invisible, it can have a luxurious appearance. For this reason, transparent LED displays have been used indoors in hotels, department stores, etc., and their importance in achieving media facades on exterior walls of buildings is increasing.

對於用於觸控螢幕等的透明電極而言,由於電極是透明的並且電流流過電極,因此隨著智慧型裝置的普及,對透明電極的需求激增,並且在透明電極中,最常用的透明電極是作為銦及錫的氧化物的氧化銦錫(ITO)。然而,作為ITO透明電極材料的主要原材料的銦在世界範圍內儲量小,且僅在例如中國等一些國家生產,且其生產成本高。此外,銦的缺點在於:由於電阻值未被均勻施加,因此要顯示的LED光並非為恆定的。出於此種原因,在使用利用ITO作為高效能、低成本的透明電極材料的透明LED時存在限制。For transparent electrodes used in touch screens, etc., since the electrodes are transparent and current flows through the electrodes, with the popularity of smart devices, the demand for transparent electrodes has surged, and among the transparent electrodes, the most commonly used transparent The electrode is indium tin oxide (ITO) which is an oxide of indium and tin. However, indium, which is the main raw material of the ITO transparent electrode material, has small reserves worldwide and is only produced in some countries such as China, and its production cost is high. In addition, the disadvantage of indium is that since the resistance value is not uniformly applied, the LED light to be displayed is not constant. For this reason, there are limitations in using transparent LEDs that use ITO as a high-performance, low-cost transparent electrode material.

儘管ITO確實在透明電極材料中佔最大比例並且已被用作透明電極材料,但由於例如經濟可行性及有限的效能等限制,利用新材料的研究及技術開發一直在進行。已作為下一代新材料引起關注的透明電極材料的實例包括金屬網(metal mesh)、奈米線(Ag奈米線)、碳奈米管(carbon nanotube,CNT)、導電聚合物、石墨烯等。其中,金屬網是佔替代ITO的材料的85%的一種新材料,且具有高導電性及低成本,且在其利用方面市場不斷擴大。Although ITO does account for the largest proportion of transparent electrode materials and has been used as a transparent electrode material, due to limitations such as economic feasibility and limited efficiency, research and technological development using new materials have been ongoing. Examples of transparent electrode materials that have attracted attention as a next-generation new material include metal mesh, nanowire (Ag nanowire), carbon nanotube (CNT), conductive polymer, graphene, etc. . Among them, the metal mesh is a new material that accounts for 85% of the materials that replace ITO, and has high conductivity and low cost, and the market for its utilization is expanding.

利用金屬網的透明LED顯示器較現有的ITO透明顯示器更容易維護,並且不僅可大大減少資源及顯著改善環境污染預防,而且由於製造成本的降低而具有經濟效益。此外,利用金屬網的透明LED顯示器可擴展並應用於各種應用,並且具有作為新的透明電極材料而應用及利用於各種產品的潛力。The transparent LED display using metal mesh is easier to maintain than the existing ITO transparent display, and not only can greatly reduce resources and significantly improve the prevention of environmental pollution, but also has economic benefits due to the reduction of manufacturing costs. In addition, the transparent LED display using the metal mesh can be expanded and applied to various applications, and has the potential to be applied as a new transparent electrode material and used in various products.

[技術問題][technical problem]

本申請案致力於提供一種透明發光裝置顯示器。 [技術解決方案]This application is dedicated to providing a transparent light emitting device display. [Technical Solution]

本申請案的示例性實施例提供一種透明發光裝置顯示器,包括: 透明基板; 導電金屬圖案,設置在所述透明基板上; 發光裝置,設置在所述導電金屬圖案的至少一部分上; 第一透明黏著劑層,設置在所述透明基板、所述導電金屬圖案及所述發光裝置上; 紫外線截止膜(UV-cut film),設置在所述第一透明黏著劑層上;以及 第二透明黏著劑層,設置在所述紫外線截止膜上。 [有利效果]An exemplary embodiment of the present application provides a transparent light-emitting device display, including: Transparent substrate A conductive metal pattern arranged on the transparent substrate; A light emitting device arranged on at least a part of the conductive metal pattern; The first transparent adhesive layer is disposed on the transparent substrate, the conductive metal pattern and the light-emitting device; A UV-cut film (UV-cut film) is disposed on the first transparent adhesive layer; and The second transparent adhesive layer is arranged on the ultraviolet cut-off film. [Advantageous effect]

根據本申請案的示例性實施例,透明發光裝置顯示器可包括紫外線截止膜,從而防止構成透明發光裝置顯示器的組件由於紫外線而劣化。According to an exemplary embodiment of the present application, the transparent light emitting device display may include an ultraviolet cut-off film, thereby preventing deterioration of components constituting the transparent light emitting device display due to ultraviolet rays.

此外,根據本申請案的示例性實施例,可在第一透明黏著劑層上包括紫外線截止膜,藉此使包括第一透明黏著劑層的結構平坦化,且因此可確保透明發光裝置顯示器的外觀特性。In addition, according to an exemplary embodiment of the present application, an ultraviolet cut-off film may be included on the first transparent adhesive layer, thereby flattening the structure including the first transparent adhesive layer, and therefore, the display of the transparent light-emitting device can be ensured Appearance characteristics.

下文中,將詳細描述本申請案。Hereinafter, this application will be described in detail.

在本申請案中,「透明」旨在意指在可見光區域(400奈米至700奈米)中具有約80%或大於80%的透射率特性。In this application, "transparent" is intended to mean a transmittance characteristic of about 80% or more in the visible light region (400 nm to 700 nm).

透明LED顯示器是藉由將LED裝置安裝至透明電極基板上而製造的產品,並且被設計成藉由在頂部層疊黏著劑層而易於貼附至玻璃窗及自玻璃窗拆卸。在將黏著劑層層疊至上面安裝有LED裝置的電極膜的頂部的製程中,LED裝置與電極膜之間的階梯差(step difference)導致黏著劑層表面的平整度降低,且然後發生入射光的畸變,從而導致窗的功能劣化。為了防止此種情況,已提出了一種層疊基板的方法,其中在所述基板的頂部設置有透明且平坦的黏著劑層。The transparent LED display is a product manufactured by mounting the LED device on a transparent electrode substrate, and is designed to be easily attached to and detached from the glass window by laminating an adhesive layer on the top. In the process of laminating the adhesive layer on top of the electrode film on which the LED device is mounted, the step difference between the LED device and the electrode film causes the flatness of the adhesive layer surface to decrease, and then incident light occurs Distortion of the window, resulting in deterioration of the function of the window. To prevent this, a method of stacking substrates has been proposed in which a transparent and flat adhesive layer is provided on the top of the substrate.

藉由將透明的LED顯示器貼附至形成建築物外牆的玻璃窗以同時執行豪華顯示器及透明窗的功能,可賦予現有窗新的價值。如上所述,當透明的LED顯示器安裝在建築物的外牆上時,產品長時間暴露於自然光,使得需要產品具有抗紫外線的耐久性。By attaching the transparent LED display to the glass window forming the outer wall of the building to perform the functions of the luxurious display and the transparent window at the same time, new value can be given to the existing window. As described above, when a transparent LED display is installed on an external wall of a building, the product is exposed to natural light for a long time, so that the product is required to have durability against ultraviolet rays.

作為相關技術中的透明LED膜基板,聚萘二甲酸乙二醇酯(polyethylene naphthalate,PEN)當長時間暴露於紫外線時具有顏色變黃的黃化現象(yellowing phenomenon),並且層疊型透明LED膜亦可具有環氧系結合層因紫外線而黃化的問題。黃化進展得越多,產品的透射率變得越低,並且由於產品的外觀不佳,因此需要減輕此種現象。As a transparent LED film substrate in the related art, polyethylene naphthalate (PEN) has a yellowing phenomenon in which the color turns yellow when exposed to ultraviolet rays for a long time, and a laminated transparent LED film There may also be a problem of yellowing of the epoxy bonding layer due to ultraviolet rays. The more yellowing progresses, the lower the transmittance of the product becomes, and due to the poor appearance of the product, this phenomenon needs to be alleviated.

本申請案旨在防止當構成透明LED膜的材料長時間暴露於紫外線時出現的黃化現象。This application aims to prevent the yellowing phenomenon that occurs when the material constituting the transparent LED film is exposed to ultraviolet rays for a long time.

根據本申請案的示例性實施例的透明發光裝置顯示器包括:透明基板;導電金屬圖案,設置在所述透明基板上;發光裝置,設置在所述導電金屬圖案的至少一部分上;第一透明黏著劑層,設置在所述透明基板、所述導電金屬圖案及所述發光裝置上;紫外線截止膜,設置在所述第一透明黏著劑層上;以及第二透明黏著劑層,設置在所述紫外線截止膜上。The transparent light-emitting device display according to the exemplary embodiment of the present application includes: a transparent substrate; a conductive metal pattern disposed on the transparent substrate; a light-emitting device disposed on at least a part of the conductive metal pattern; a first transparent adhesive An agent layer, arranged on the transparent substrate, the conductive metal pattern, and the light emitting device; an ultraviolet cut-off film, arranged on the first transparent adhesive layer; and a second transparent adhesive layer, arranged on the UV cut film on.

在本申請案的示例性實施例中,所述紫外線截止膜可在可見光區域(380奈米≦λ≦780奈米)中具有85%或大於85%的透射率,並且在紫外線(λ<380奈米)區域中具有小於1%的透射率。In an exemplary embodiment of the present application, the ultraviolet cut-off film may have a transmittance of 85% or more than 85% in the visible light region (380nm≦λ≦780nm), and have a transmittance of 85% or more in the ultraviolet light (λ<380 nm). Nano) area has a transmittance of less than 1%.

在本申請案的示例性實施例中,所述紫外線截止膜可為包含紫外線吸收劑的透明膜。此外,在本申請案的另一示例性實施例中,所述紫外線截止膜可包括:透明膜;以及紫外線截止塗層,設置在所述透明膜上。In an exemplary embodiment of the present application, the ultraviolet cut-off film may be a transparent film including an ultraviolet absorber. In addition, in another exemplary embodiment of the present application, the ultraviolet cut-off film may include: a transparent film; and an ultraviolet cut-off coating layer disposed on the transparent film.

透明膜可由以下構成:胺基甲酸酯樹脂;聚醯亞胺樹脂;聚酯樹脂;(甲基)丙烯酸酯系聚合物樹脂;聚烯烴系樹脂,例如聚乙烯或聚丙烯等。此外,透明基板可為可見光透射率為80%或大於80%的膜,例如聚對苯二甲酸乙二醇酯(polyethylene terephthalate,PET)、環烯烴聚合物(cyclic olefin polymer,COP)、聚萘二甲酸乙二醇酯(PEN)、聚醚碸(polyethersulfone,PES)、聚碳酸酯(polycarbonate,PC)、聚甲基丙烯酸甲酯(polymethyl methacrylate,PMMA)及乙醯賽璐珞(acetyl celluloid)。The transparent film may be composed of: urethane resin; polyimide resin; polyester resin; (meth)acrylate polymer resin; polyolefin resin such as polyethylene or polypropylene. In addition, the transparent substrate may be a film with a visible light transmittance of 80% or greater, such as polyethylene terephthalate (PET), cyclic olefin polymer (COP), polynaphthalene Ethylene dicarboxylate (PEN), polyethersulfone (PES), polycarbonate (PC), polymethyl methacrylate (PMMA) and acetyl celluloid (acetyl celluloid).

更具體而言,包含紫外線吸收劑的透明膜可使用藉由以下方式獲得的材料來製備:向上述透明膜材料中添加紫外線吸收劑,並對透明膜材料執行擠出製程等。More specifically, a transparent film containing an ultraviolet absorber can be prepared using a material obtained by adding an ultraviolet absorber to the above-mentioned transparent film material, and performing an extrusion process on the transparent film material.

此外,可藉由在透明膜上塗佈紫外線截止塗佈組成物來製備紫外線截止膜。In addition, the UV cut film can be prepared by coating the UV cut coating composition on the transparent film.

紫外線截止塗佈組成物可包含紫外線吸收劑、可光固化樹脂、光起始劑及有機溶劑。The ultraviolet cut-off coating composition may include an ultraviolet absorber, a photocurable resin, a photoinitiator, and an organic solvent.

較佳地,紫外線吸收劑在380奈米的波長下具有0.01至0.10的消光係數值。較佳地,紫外線吸收劑選自由三嗪系紫外線吸收劑組成的群組。以100重量份的形成紫外線截止膜的塗層的塗佈液組成物的固體含量計,紫外線吸收劑的含量可為0.1重量份至5.0重量份。Preferably, the ultraviolet absorber has an extinction coefficient value of 0.01 to 0.10 at a wavelength of 380 nm. Preferably, the ultraviolet absorber is selected from the group consisting of triazine-based ultraviolet absorbers. The content of the ultraviolet absorbent may be 0.1 to 5.0 parts by weight based on 100 parts by weight of the solid content of the coating liquid composition forming the coating layer of the ultraviolet cut-off film.

當以100重量份的形成紫外線截止膜的塗層的塗佈液組成物的固體含量計,紫外線吸收劑的含量小於0.1重量份時,可能發生紫外線未被充分阻擋的問題。此外,當紫外線吸收劑的含量大於5.0重量份時,大量的單分子紫外線吸收劑被添加至黏合劑中,且因此平均分子量可降低,使得耐久性可劣化,並且關於樹脂及紫外線吸收劑的相容性,當包含大量紫外線吸收劑時,其中紫外線吸收劑在塗佈後的高溫乾燥製程期間逸出此遷移問題會進一步加劇,使得存在有不利於可加工性的趨勢。When the content of the ultraviolet absorber is less than 0.1 parts by weight based on 100 parts by weight of the solid content of the coating liquid composition forming the coating layer of the ultraviolet cut-off film, the problem of insufficient UV blocking may occur. In addition, when the content of the ultraviolet absorber is more than 5.0 parts by weight, a large amount of single-molecule ultraviolet absorber is added to the binder, and thus the average molecular weight may be reduced, so that durability may be deteriorated, and there is a concern about the relative relationship between the resin and the ultraviolet absorber Compatibility. When a large amount of UV absorbers are included, the migration problem of UV absorbers escaping during the high-temperature drying process after coating will be further aggravated, making it tend to be detrimental to processability.

作為可光固化樹脂,可具體使用丙烯酸系樹脂,且舉例而言,可使用反應性丙烯酸酯寡聚物、多官能丙烯酸酯單體或其混合物。作為反應性丙烯酸酯的寡聚物,可使用胺基甲酸酯丙烯酸酯寡聚物、環氧丙烯酸酯寡聚物、聚酯丙烯酸酯、聚醚丙烯酸酯或其混合物。作為多官能丙烯酸酯單體,可使用二季戊四醇六丙烯酸酯、二季戊四醇羥基五丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三丙烯酸酯、三亞甲基丙基三丙烯酸酯、丙氧基化甘油三丙烯酸酯、三羥甲基丙烷乙氧基三丙烯酸酯、1,6-己二醇二丙烯酸酯、丙氧基化甘油三丙烯酸酯、三丙二醇二丙烯酸酯、乙二醇二丙烯酸酯或其混合物。As the photocurable resin, an acrylic resin can be specifically used, and for example, a reactive acrylate oligomer, a multifunctional acrylate monomer, or a mixture thereof can be used. As the oligomer of the reactive acrylate, urethane acrylate oligomer, epoxy acrylate oligomer, polyester acrylate, polyether acrylate, or a mixture thereof can be used. As a multifunctional acrylate monomer, dipentaerythritol hexaacrylate, dipentaerythritol hydroxypentaacrylate, pentaerythritol tetraacrylate, pentaerythritol triacrylate, trimethylene propyl triacrylate, propoxylated glycerol triacrylate can be used , Trimethylolpropane ethoxy triacrylate, 1,6-hexanediol diacrylate, propoxylated glycerol triacrylate, tripropylene glycol diacrylate, ethylene glycol diacrylate or mixtures thereof.

考量到在施加紫外線截止塗佈組成物時賦予恰當的黏度以實現容易的可使用性、將最終形成的膜的膜強度等,可以按100重量份的可光固化樹脂計較佳地為50重量份至500重量份、更佳地為100重量份至400重量份、且最佳地為150重量份至350重量份的量使用有機溶劑。在此種情況下,作為可使用的有機溶劑的類型,可使用選自由例如醇、乙酸酯、酮、溶纖劑、二甲基甲醯胺、四氫呋喃、丙二醇單甲醚、甲苯及二甲苯組成的群組中的一者或一或多者的混合物,但有機溶劑並非僅限於此。在此種情況下,醇的實例包括甲醇、乙醇、異丙醇、丁醇、異丁醇、二丙酮醇等,但並非僅限於此。此外,作為乙酸酯,可使用乙酸甲酯、乙酸乙酯、乙酸異丙酯、乙酸丁酯或乙酸溶纖劑,且作為酮,可使用甲基乙基酮、甲基異丁基酮、乙醯丙酮或丙酮,但乙酸酯及酮並非僅限於此。In consideration of the application of the UV cut coating composition, the appropriate viscosity is imparted to achieve easy workability, the film strength of the film to be finally formed, etc., it may be preferably 50 parts by weight based on 100 parts by weight of the photocurable resin The organic solvent is used in an amount of 500 parts by weight, more preferably 100 parts by weight to 400 parts by weight, and most preferably 150 parts by weight to 350 parts by weight. In this case, as the type of organic solvent that can be used, for example, alcohol, acetate, ketone, cellosolve, dimethylformamide, tetrahydrofuran, propylene glycol monomethyl ether, toluene, and xylene can be used. One or a mixture of one or more of the group, but the organic solvent is not limited to this. In this case, examples of alcohol include methanol, ethanol, isopropanol, butanol, isobutanol, diacetone alcohol, etc., but are not limited to these. In addition, as the acetate, methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate, or cellosolve acetate can be used, and as the ketone, methyl ethyl ketone, methyl isobutyl ketone, Acetylacetone or acetone, but acetate and ketones are not limited to this.

作為光起始劑,可使用此項技術中已知的光起始劑。As the photoinitiator, a photoinitiator known in the art can be used.

紫外線截止塗佈組成物可包含調平劑、潤濕劑及消泡劑中的一或多者作為添加劑。以100份的可光固化樹脂計,可各自以在0.01重量份至10重量份範圍內的量包含所述添加劑。調平劑用於使利用塗佈組成物塗佈的塗膜的表面均勻。此外,由於潤濕劑用於降低塗佈組成物的表面能,因此當以塗佈組成物塗佈透明基板層時,潤濕劑有助於塗佈組成物被均勻施加。可添加消泡劑以移除塗佈組成物中的氣泡。形成塗層的塗佈液組成物的固體含量意指除溶劑之外的組分。The UV cut coating composition may include one or more of a leveling agent, a wetting agent, and a defoaming agent as additives. The additives may each be included in an amount ranging from 0.01 parts by weight to 10 parts by weight based on 100 parts of the photocurable resin. The leveling agent is used to make the surface of the coating film coated with the coating composition uniform. In addition, since the wetting agent is used to reduce the surface energy of the coating composition, when the transparent substrate layer is coated with the coating composition, the wetting agent helps the coating composition to be uniformly applied. A defoamer can be added to remove bubbles in the coating composition. The solid content of the coating liquid composition forming the coating layer means components other than the solvent.

較佳地,紫外線截止塗層的厚度為3微米至10微米。Preferably, the thickness of the UV cut-off coating is 3 to 10 microns.

此外,較佳地,紫外線截止膜具有50微米至250微米的厚度。當紫外線截止膜具有小於50微米的厚度時,可使用性不佳,並且可能難以藉由膜層疊來控制黏著劑層的平整度。此外,當紫外線截止膜的厚度大於250微米時,光學材料的物理性質(例如,透射率及霧度)可劣化,此增加製造成本並且不利於減輕產品的重量。In addition, preferably, the ultraviolet cut-off film has a thickness of 50 μm to 250 μm. When the ultraviolet cut-off film has a thickness of less than 50 microns, the workability is poor, and it may be difficult to control the flatness of the adhesive layer by film lamination. In addition, when the thickness of the ultraviolet cut-off film is greater than 250 microns, the physical properties of the optical material (for example, transmittance and haze) may be deteriorated, which increases manufacturing cost and is not conducive to reducing the weight of the product.

在本申請案的示例性實施例中,在透明基板與導電金屬圖案之間可更包括結合層。亦即,可在透明基板上設置結合層,並且可在結合層上設置導電金屬圖案。In an exemplary embodiment of the present application, a bonding layer may be further included between the transparent substrate and the conductive metal pattern. That is, a bonding layer may be provided on the transparent substrate, and a conductive metal pattern may be provided on the bonding layer.

此外,在本申請案的另一示例性實施例中,在透明基板上可更包括結合層,並且導電金屬圖案可以嵌入於結合層中的形式設置。在此種情況下,可將以嵌入於結合層中的形式設置的導電金屬圖案的至少一部分設置成與發光裝置接觸。In addition, in another exemplary embodiment of the present application, a bonding layer may be further included on the transparent substrate, and the conductive metal pattern may be embedded in the bonding layer. In this case, at least a part of the conductive metal pattern provided in the form of being embedded in the bonding layer may be provided in contact with the light emitting device.

結合層可包含熱固性結合劑組成物或可紫外線固化結合劑組成物、或其固化產物。The bonding layer may include a thermosetting bonding agent composition or an ultraviolet curable bonding agent composition, or a cured product thereof.

結合層可包含熱固性結合劑組成物或可紫外線固化結合劑組成物、或其固化產物。更具體而言,結合層可包含矽烷改質的環氧樹脂、雙酚A型苯氧基樹脂、起始劑及矽烷偶合劑,但並非僅限於此。結合層可具有8微米至50微米的厚度。當結合層滿足上述厚度範圍時,在嵌入設置在結合層上的金屬圖案的製程中對應於佈線電極部分的金屬圖案可被完全嵌入,並且當結合層的厚度超出上述厚度範圍時,佈線電極部分無法被完全嵌入,或者結合層的流動性可增加從而導致圖案斷接。更具體而言,當結合層的厚度小於金屬圖案的厚度的2.5倍時,不可能完全嵌入金屬圖案,且因此佈線電極部分的上表面被暴露出,使得可能引發由腐蝕導致的耐久性劣化,並且氣泡被捕獲在佈線電極部分之間的黏著劑層的上部,使得可能出現外觀缺陷。此外,當結合層的厚度大於金屬圖案的厚度的兩倍時,在藉由熱層疊製程進行的嵌入製程期間結合層的流動性可增加,使得可能導致佈線電極部分圖案的斷接。The bonding layer may include a thermosetting bonding agent composition or an ultraviolet curable bonding agent composition, or a cured product thereof. More specifically, the bonding layer may include a silane-modified epoxy resin, a bisphenol A phenoxy resin, an initiator, and a silane coupling agent, but it is not limited to this. The bonding layer may have a thickness of 8 to 50 microns. When the bonding layer satisfies the above-mentioned thickness range, the metal pattern corresponding to the wiring electrode portion can be completely embedded in the process of embedding the metal pattern provided on the bonding layer, and when the thickness of the bonding layer exceeds the above-mentioned thickness range, the wiring electrode portion It cannot be fully embedded, or the fluidity of the bonding layer may increase, resulting in pattern disconnection. More specifically, when the thickness of the bonding layer is less than 2.5 times the thickness of the metal pattern, it is impossible to completely embed the metal pattern, and therefore the upper surface of the wiring electrode portion is exposed, making it possible to induce durability deterioration due to corrosion, And air bubbles are trapped in the upper part of the adhesive layer between the wiring electrode parts, so that appearance defects may occur. In addition, when the thickness of the bonding layer is greater than twice the thickness of the metal pattern, the fluidity of the bonding layer may increase during the embedding process by the thermal lamination process, making it possible to cause disconnection of the wiring electrode portion pattern.

在本申請案的示例性實施例中,導電金屬圖案可包括佈線電極部分圖案及發光裝置安裝部分圖案,並且發光裝置可設置在發光裝置安裝部分圖案上。In an exemplary embodiment of the present application, the conductive metal pattern may include a wiring electrode part pattern and a light emitting device mounting part pattern, and the light emitting device may be disposed on the light emitting device mounting part pattern.

在本申請案中,佈線電極部分圖案可包括第一公共電極佈線部分圖案、第二公共電極佈線部分圖案及訊號電極佈線部分圖案。訊號電極佈線部分圖案可設置在第一公共電極佈線部分與第二公共電極佈線部分之間。在本申請案的示例性實施例中,第一公共電極佈線部分可為(+)公共電極佈線部分,且第二公共電極佈線部分可為(-)公共電極佈線部分。此外,第一公共電極佈線部分可為(-)公共電極佈線部分,且第二公共電極佈線部分可為(+)公共電極佈線部分。根據本申請案的示例性實施例,將通道形成為其中訊號電極佈線部分在(+)公共電極佈線部分與(-)公共電極佈線部分之間穿過的結構,使得電極佈線不針對每個發光裝置單獨設置,並且可被連接作為(+)公共電極佈線部分與(-)公共電極佈線部分之間的公共電極。In the present application, the wiring electrode portion pattern may include a first common electrode wiring portion pattern, a second common electrode wiring portion pattern, and a signal electrode wiring portion pattern. The signal electrode wiring portion pattern may be disposed between the first common electrode wiring portion and the second common electrode wiring portion. In an exemplary embodiment of the present application, the first common electrode wiring part may be a (+) common electrode wiring part, and the second common electrode wiring part may be a (-) common electrode wiring part. In addition, the first common electrode wiring part may be a (-) common electrode wiring part, and the second common electrode wiring part may be a (+) common electrode wiring part. According to an exemplary embodiment of the present application, the channel is formed as a structure in which the signal electrode wiring portion passes between the (+) common electrode wiring portion and the (-) common electrode wiring portion, so that the electrode wiring is not for each light emitting The device is separately provided and can be connected as a common electrode between the (+) common electrode wiring portion and the (-) common electrode wiring portion.

在本申請案中,發光裝置安裝部分圖案被配置成設置在使用焊料安裝發光元件的位置處。In the present application, the light emitting device mounting portion pattern is configured to be provided at a position where the light emitting element is mounted using solder.

在本申請案中,熟習此項技術者可考量透明發光裝置顯示器的使用等而適當地選擇發光裝置的數量,並且所述數量不受特別限制。更具體而言,發光裝置的數量與電極的電阻相關,並且當電極具有足夠低的電阻並且顯示器的面積為大時,發光裝置的數量可增加。當相同面積中發光裝置的數量增加時,解析度增加,並且當以相同間隔增加發光裝置的數量時,顯示器的面積增加,並且電源單元的電線可減少,使得熟習此項技術者可考量透明發光裝置顯示器的使用等來適當選擇發光裝置的數量。In this application, those skilled in the art can appropriately select the number of light-emitting devices in consideration of the use of transparent light-emitting device displays, and the number is not particularly limited. More specifically, the number of light emitting devices is related to the resistance of the electrode, and when the electrode has a sufficiently low resistance and the area of the display is large, the number of light emitting devices may increase. When the number of light-emitting devices in the same area increases, the resolution increases, and when the number of light-emitting devices is increased at the same interval, the area of the display increases, and the wires of the power supply unit can be reduced, so that those skilled in the art can consider transparent light emission The number of light-emitting devices is appropriately selected by the use of device displays, etc.

在本申請案的示例性實施例中,發光裝置可與訊號電極佈線部分圖案串聯連接,並且可與第一公共電極佈線部分圖案及第二公共電極佈線部分圖案串聯連接。由於第一公共電極佈線部分圖案及第二公共電極佈線部分圖案提供足夠量的電流用於驅動發光裝置,並且發送發光裝置的顏色訊號僅需要低電流來發送訊號,因此第一公共電極佈線部分圖案及第二公共電極佈線部分圖案可與訊號電極佈線部分圖案串聯連接。In the exemplary embodiment of the present application, the light emitting device may be connected in series with the signal electrode wiring portion pattern, and may be connected in series with the first common electrode wiring portion pattern and the second common electrode wiring portion pattern. Since the first common electrode wiring portion pattern and the second common electrode wiring portion pattern provide sufficient current for driving the light emitting device, and the color signal of the light emitting device only needs low current to transmit the signal, the first common electrode wiring portion pattern And the second common electrode wiring portion pattern may be connected in series with the signal electrode wiring portion pattern.

若發光裝置與各個電極並聯連接至電源單元,而不是如在本申請案中用於驅動所有發光裝置並發出訊號的結構,則每個電極的寬度需要不同(連接至最遠的發光裝置的電極的寬度最大),以便滿足取決於發光裝置的佈置距離的電阻值,並且由於由設置多個發光裝置此特性所導致的電極佈置面積的空間限制,難以構造具有低電阻的電極。If the light-emitting device and each electrode are connected in parallel to the power supply unit, instead of the structure used to drive all the light-emitting devices and emit signals as in this application, the width of each electrode needs to be different (the electrode connected to the farthest light-emitting device In order to meet the resistance value that depends on the arrangement distance of the light emitting device, and due to the space limitation of the electrode arrangement area caused by the feature of providing multiple light emitting devices, it is difficult to construct an electrode with low resistance.

在本申請案的示例性實施例中,第一公共電極佈線部分圖案、第二公共電極佈線部分圖案及訊號電極佈線部分圖案可藉由斷接部分彼此分離。斷接部分意指所述部分的一部分被截止以斷開電性連接的區域。斷接部分的寬度可指彼此分離的第一公共電極佈線部分圖案、第二公共電極佈線部分圖案及訊號電極佈線部分圖案中的最近端之間的距離。斷接部分的寬度可為80微米或小於80微米、60微米或小於60微米、40微米或小於40微米、或30微米或小於30微米,但並非僅限於此。斷接部分的寬度可為5微米或大於5微米。根據本申請案的示例性實施例,藉由使將第一公共電極佈線部分圖案、第二公共電極佈線部分圖案及訊號電極佈線部分圖案彼此分離的斷接部分的寬度最小化,可降低佈線的可識別性。In the exemplary embodiment of the present application, the first common electrode wiring portion pattern, the second common electrode wiring portion pattern, and the signal electrode wiring portion pattern may be separated from each other by the disconnection portion. The disconnected part means an area where a part of the part is cut off to disconnect the electrical connection. The width of the disconnection portion may refer to the distance between the closest ends of the first common electrode wiring portion pattern, the second common electrode wiring portion pattern, and the signal electrode wiring portion pattern that are separated from each other. The width of the disconnected portion can be 80 microns or less, 60 microns or less than 60 microns, 40 microns or less than 40 microns, or 30 microns or less than 30 microns, but it is not limited to this. The width of the disconnected portion may be 5 microns or greater. According to the exemplary embodiment of the present application, by minimizing the width of the disconnection portion separating the first common electrode wiring portion pattern, the second common electrode wiring portion pattern, and the signal electrode wiring portion pattern from each other, the wiring size can be reduced. Recognizable.

在本申請案的示例性實施例中,發光裝置安裝部分圖案的線寬可為100微米或大於100微米,並且可為100微米至1,000微米,但並非僅限於此。In an exemplary embodiment of the present application, the line width of the pattern of the light-emitting device mounting portion may be 100 μm or more, and may be 100 μm to 1,000 μm, but is not limited to this.

在本申請案的示例性實施例中,佈線電極部分圖案的線寬可為50微米或小於50微米、30微米或小於30微米、25微米或小於25微米及20微米或小於20微米,但並非僅限於此。佈線電極部分圖案的線寬越小,則佈線電極部分圖案在透射率及佈線的可識別性方面越有利,但可導致電阻的降低,並且在此種情況下,當佈線電極部分圖案的厚度增加時,可改善電阻的降低。佈線電極部分圖案可具有5微米或大於5微米的線寬。In the exemplary embodiment of the present application, the line width of the pattern of the wiring electrode portion may be 50 microns or less, 30 microns or less than 30 microns, 25 microns or less than 25 microns and 20 microns or less than 20 microns, but not Limited to this. The smaller the line width of the wiring electrode part pattern is, the more advantageous the wiring electrode part pattern is in terms of transmittance and recognizability of the wiring, but may result in a decrease in resistance, and in this case, when the thickness of the wiring electrode part pattern increases When, the resistance reduction can be improved. The wiring electrode part pattern may have a line width of 5 microns or more.

導電金屬圖案的材料不受特別限制,但較佳地包括金屬及金屬合金中的一或多者。導電金屬圖案可包含金、銀、鋁、銅、釹、鉬、鎳或其合金,但並非僅限於此。The material of the conductive metal pattern is not particularly limited, but preferably includes one or more of metals and metal alloys. The conductive metal pattern may include gold, silver, aluminum, copper, neodymium, molybdenum, nickel or alloys thereof, but it is not limited thereto.

導電金屬圖案的厚度不受特別限制,但可為3微米或大於3微米,並且自導電金屬圖案的導電性及形成製程的經濟可行性的視角來看,所述厚度可為3微米至20微米。The thickness of the conductive metal pattern is not particularly limited, but can be 3 microns or more, and from the perspective of the conductivity of the conductive metal pattern and the economic feasibility of the forming process, the thickness can be 3 to 20 microns .

在本申請案的示例性實施例中,第一透明黏著劑層及第二透明黏著劑層可各自獨立地包含矽酮系材料、丙烯酸系材料、胺基甲酸酯系材料及其衍生物中的一或多者。In the exemplary embodiment of the present application, the first transparent adhesive layer and the second transparent adhesive layer may each independently include silicone-based materials, acrylic-based materials, urethane-based materials, and derivatives thereof. One or more of.

更具體而言,第一透明黏著劑層可由用於黏著劑層的組成物形成,所述組成物包括:黏著劑樹脂,例如(甲基)丙烯酸系樹脂、胺基甲酸酯樹脂、矽酮樹脂及環氧樹脂;固化劑;光起始劑;以及矽烷偶合劑,但本發明並非僅限於此。舉例而言,(甲基)丙烯酸系樹脂可包括聚(甲基)丙烯酸烷基酯,並且聚(甲基)丙烯酸烷基酯可包括聚丙烯酸甲酯、聚丙烯酸乙酯、聚丙烯酸丙酯、聚丙烯酸丁酯、聚丙烯酸異丙酯、聚丙烯酸己酯、聚甲基丙烯酸己酯、聚丙烯酸乙基己酯、聚甲基丙烯酸乙基己酯及聚矽氧烷中的一或多者,並且並非僅限於此。作為胺基甲酸酯樹脂,可使用聚胺基甲酸酯樹脂,並且聚胺基甲酸酯樹脂可包含胺基甲酸酯基團作為不具有(甲基)丙烯酸酯基團的非(甲基)丙烯酸酯系樹脂。聚胺基甲酸酯樹脂可為市售產品,或者可藉由典型的方法合成。More specifically, the first transparent adhesive layer may be formed of a composition for the adhesive layer, the composition includes: an adhesive resin, such as (meth)acrylic resin, urethane resin, silicone Resins and epoxy resins; curing agents; photoinitiators; and silane coupling agents, but the present invention is not limited to these. For example, the (meth)acrylic resin may include polyalkyl (meth)acrylate, and the polyalkyl (meth)acrylate may include polymethyl acrylate, polyethyl acrylate, polypropyl acrylate, One or more of polybutyl acrylate, polyisopropyl acrylate, polyhexyl acrylate, polyhexyl methacrylate, polyethylhexyl acrylate, polyethylhexyl methacrylate, and polysiloxane, And it is not limited to this. As the urethane resin, a polyurethane resin may be used, and the polyurethane resin may contain a urethane group as a non-(meth)acrylate group having no (meth)acrylate group. Base) Acrylic resin. The polyurethane resin may be a commercially available product, or may be synthesized by a typical method.

第二透明黏著劑層可包含矽酮系樹脂及固化劑。舉例而言,矽酮系樹脂可為含乙烯基的聚二甲基矽氧烷樹脂。更具體而言,含乙烯基的聚二甲基矽氧烷樹脂可由用於製備矽酮系橡膠的組成物製備,所述組成物包含乙烯基甲基二甲氧基矽烷、及不具有乙烯基的二甲基二甲氧基矽烷,所述乙烯基甲基二甲氧基矽烷是含乙烯基的矽酮單體。用於製備矽酮系橡膠的組成物可更包含除二甲基二甲氧基矽烷之外的其他典型矽酮單體,作為不具有乙烯基的矽酮單體。固化劑可包含具有二或更多個Si-H基團的矽酮系化合物,以便與矽酮系橡膠的可固化官能基進行氫化矽烷化反應(hydrosilylation)。固化劑可藉由熱及/或紫外線進行氫化矽烷化反應。以100重量份的矽酮系橡膠計,固化劑的含量可為0.1重量份至20重量份,具體而言為0.5重量份至18重量份,且具體而言為0.7重量份至15重量份。在上述範圍內,可存在一定固化程度的效果,其能夠表現出抗衝擊性效果。The second transparent adhesive layer may include silicone resin and curing agent. For example, the silicone resin may be a vinyl-containing polydimethylsiloxane resin. More specifically, the vinyl-containing polydimethylsiloxane resin can be prepared from a composition for preparing silicone rubber, the composition including vinyl methyl dimethoxy silane and no vinyl group The dimethyl dimethoxy silane, the vinyl methyl dimethoxy silane is a vinyl-containing silicone monomer. The composition used to prepare the silicone rubber may further contain other typical silicone monomers other than dimethyldimethoxysilane, as the silicone monomers without vinyl groups. The curing agent may include a silicone compound having two or more Si-H groups in order to perform a hydrosilylation reaction with the curable functional group of the silicone rubber. The curing agent can undergo a hydrosilylation reaction by heat and/or ultraviolet light. Based on 100 parts by weight of the silicone-based rubber, the content of the curing agent may be 0.1 to 20 parts by weight, specifically 0.5 to 18 parts by weight, and specifically 0.7 to 15 parts by weight. Within the above range, there may be an effect of a certain degree of curing, which can exhibit impact resistance effects.

第一透明黏著劑層被形成為具有較發光裝置的高度階梯差厚1.0毫米至10.0毫米的厚度,但並非僅限於所述厚度。當第一透明黏著劑層的厚度被形成為較發光裝置的高度差厚小於1.0毫米時,安裝在電極膜頂部上的發光裝置的表面無法被充分覆蓋,使得發光裝置在受到外部衝擊時可受到損壞,並且層疊在第一透明黏著劑層上的紫外線截止膜的黏著性質可劣化。此外,當第一透明黏著劑層的厚度被形成為較發光元件的高度階梯差大與所述高度差相差10.0毫米時,會發生不必要的材料消耗,此可不利於產品的重量減輕。The first transparent adhesive layer is formed to have a thickness that is 1.0 mm to 10.0 mm thicker than the height difference of the light emitting device, but is not limited to the thickness. When the thickness of the first transparent adhesive layer is formed to be less than 1.0 mm thicker than the height difference of the light-emitting device, the surface of the light-emitting device mounted on the top of the electrode film cannot be sufficiently covered, so that the light-emitting device can be exposed to external impact Damaged, and the adhesive properties of the ultraviolet cut-off film laminated on the first transparent adhesive layer may be deteriorated. In addition, when the thickness of the first transparent adhesive layer is formed to be larger than the height difference of the light-emitting element and 10.0 mm from the height difference, unnecessary material consumption will occur, which may not be conducive to the weight reduction of the product.

第二透明黏著劑層的厚度可為0.01毫米至10.0毫米,但並非僅限於此。當第二透明黏著劑層的厚度小於0.01毫米時,液體矽酮樹脂的調平性質劣化以形成第二透明黏著劑層,第二透明黏著劑層的厚度的均勻性可受損,並且擔心對在重覆貼附及拆卸產品的操作期間可能發生的物理損壞的耐久性,這並非為較佳的。此外,當第二透明黏著劑層的厚度大於10.0毫米時,會發生不必要的材料消耗,此可不利於產品的重量減輕。The thickness of the second transparent adhesive layer can be 0.01 mm to 10.0 mm, but it is not limited to this. When the thickness of the second transparent adhesive layer is less than 0.01 mm, the leveling properties of the liquid silicone resin deteriorate to form the second transparent adhesive layer, the uniformity of the thickness of the second transparent adhesive layer may be impaired, and there is a concern The durability of physical damage that may occur during repeated operations of attaching and removing the product is not preferable. In addition, when the thickness of the second transparent adhesive layer is greater than 10.0 mm, unnecessary material consumption will occur, which may not be conducive to the weight reduction of the product.

在本申請案的示例性實施例中,透明基板可為具有優異的透明度、表面光滑度、易操作性及防水性質的玻璃基板或透明塑膠基板,但其並非僅限於此,並且所述透明基板不受限制,只要所述透明基板是在電子裝置中通常使用的透明基板即可。具體而言,透明基板可由以下構成:玻璃;胺基甲酸酯樹脂;聚醯亞胺樹脂;聚酯樹脂;(甲基)丙烯酸酯系聚合物樹脂;聚烯烴系樹脂,例如聚乙烯或聚丙烯等。此外,透明基板可為可見光透射率為80%或大於80%的膜,例如聚對苯二甲酸乙二醇酯(PET)、環烯烴聚合物(COP)、聚萘二甲酸乙二醇酯(PEN)、聚醚碸(PES)、聚碳酸酯(PC)及乙醯賽璐珞。透明基板的厚度可為25微米至250微米,但並非僅限於此。In the exemplary embodiment of the present application, the transparent substrate may be a glass substrate or a transparent plastic substrate with excellent transparency, surface smoothness, easy handling, and waterproof properties, but it is not limited to this, and the transparent substrate It is not limited, as long as the transparent substrate is a transparent substrate commonly used in electronic devices. Specifically, the transparent substrate may be composed of: glass; urethane resin; polyimide resin; polyester resin; (meth)acrylate polymer resin; polyolefin resin, such as polyethylene or poly Propylene and so on. In addition, the transparent substrate may be a film with a visible light transmittance of 80% or more, such as polyethylene terephthalate (PET), cycloolefin polymer (COP), polyethylene naphthalate ( PEN), Polyether Sulfate (PES), Polycarbonate (PC) and Acetyl Celluloid. The thickness of the transparent substrate can range from 25 microns to 250 microns, but is not limited to this.

在下圖1及圖2中示意性地示出了根據本申請案的示例性實施例的透明發光裝置顯示器。更具體而言,下圖1示出在透明基板與導電金屬圖案之間包括結合層的透明發光裝置顯示器,且下圖2示出在透明基板上包括結合層的透明發光裝置顯示器,其中導電金屬圖案以嵌入於結合層中的形式設置。The transparent light emitting device display according to the exemplary embodiment of the present application is schematically shown in the following FIGS. 1 and 2. More specifically, Figure 1 below shows a transparent light emitting device display including a bonding layer between a transparent substrate and a conductive metal pattern, and Figure 2 below shows a transparent light emitting device display including a bonding layer on the transparent substrate, wherein the conductive metal The pattern is set in the form of being embedded in the bonding layer.

在下文中,將藉由實例來舉例說明在本說明書中描述的示例性實施例。然而,所述示例性實施例的範圍不旨在受以下實例的限制。 實例 實例 1> Hereinafter, the exemplary embodiments described in this specification will be exemplified by examples. However, the scope of the exemplary embodiment is not intended to be limited by the following examples. < Example > < Example 1>

藉由對聚對苯二甲酸乙二醇酯(PET,由東麗工業公司(Toray Industries Inc.)製造的XG7PH2)進行電解鍍覆以形成銅(Cu)層而製備了在本申請案中使用的原材料,並且使用輥式層疊機(roll laminator)在100℃下將乾膜抗蝕劑(dry film resist,DFR,朝日化學工業公司(Asahi Chemical Industry)SPG-152)熱層疊在了金屬表面上。Prepared by electrolytic plating of polyethylene terephthalate (PET, XG7PH2 manufactured by Toray Industries Inc.) to form a copper (Cu) layer used in this application The raw material of the product, and the dry film resist (DFR, Asahi Chemical Industry SPG-152) was thermally laminated on the metal surface at 100°C using a roll laminator (roll laminator) .

將包括佈線電極部分圖案及發光裝置安裝部分圖案的光遮罩施加到了層疊有DFR的鍍Cu原材料的上表面,並使用準直曝光裝置(collimation light exposure device)以250毫焦耳/平方公分(mJ/cm2 )的光強度暴露於波長為365奈米波長的紫外線。此後,藉由顯影-蝕刻-剝落(development-etching-peeling)的濕法製程在結合層的頂部上形成了具有不平整結構的金屬圖案。將每個步驟中使用的所有溶液都保持在了室溫下。使用1.0重量%的Na2 CO3 水溶液作為顯影溶液,蝕刻劑為包含氯化鐵及鹽酸的混合溶液,且使用2.0重量%的NaOH水溶液作為剝離溶液。A light mask including the pattern of the wiring electrode part and the pattern of the light-emitting device mounting part was applied to the upper surface of the Cu-plated raw material laminated with DFR, and a collimation light exposure device was used at 250 millijoules/cm² (mJ /cm 2 ) is exposed to ultraviolet rays with a wavelength of 365 nanometers. Thereafter, a metal pattern with an uneven structure is formed on the top of the bonding layer by a wet process of development-etching-peeling. Keep all the solutions used in each step at room temperature. A 1.0% by weight Na 2 CO 3 aqueous solution was used as the developing solution, the etchant was a mixed solution containing ferric chloride and hydrochloric acid, and a 2.0% by weight NaOH aqueous solution was used as the peeling solution.

Cu佈線電極部分圖案是重覆的正方形網格圖案,並且具有24微米的線寬、300微米的節距、8微米的線高、以及寬度為60微米的斷接部分,所有所述圖案皆為相同的。The pattern of the Cu wiring electrode portion is a repeated square grid pattern, and has a line width of 24 microns, a pitch of 300 microns, a line height of 8 microns, and a disconnection portion with a width of 60 microns. All the patterns are identical.

在將焊膏網版印刷在電極焊盤部分上之後,在大約170℃的溫度下安裝並引入了發光裝置,並且使用焊膏藉由焊膏回焊製程結合發光裝置安裝部分與發光裝置。為在發光裝置及電極膜的頂部上形成第一黏著劑層,以每單位面積(1平方公分)的電極膜1克或少於1克的量施加第一黏著劑層組成物。在將黏著劑層在室溫下靜置10分鐘或大於10分鐘以藉由調平達成黏著劑層的平坦化之後,當相對於玻璃的黏著強度為100克力/英吋(gf/inch)或大於100克力/英吋時,使用層疊機將紫外線截止膜層疊在黏著劑層上。藉由用包含1.0重量份的紫外線吸收劑的組成物塗佈厚度為188微米的光學PET膜(由SKC公司製造的V5400)並在100℃下乾燥所述光學PET膜10分鐘而製造了紫外線截止膜。將用於形成第二黏著劑層的組成物施加到了紫外線截止膜的頂部,並將所述紫外線截止膜在室溫下靜置了48小時。After the solder paste was screen-printed on the electrode pad portion, the light-emitting device was installed and introduced at a temperature of about 170° C., and the light-emitting device mounting portion and the light-emitting device were combined through a solder paste reflow process using solder paste. To form the first adhesive layer on top of the light-emitting device and the electrode film, the first adhesive layer composition is applied in an amount of 1 gram or less per unit area (1 cm²) of the electrode film. After the adhesive layer is allowed to stand at room temperature for 10 minutes or more than 10 minutes to achieve the flattening of the adhesive layer by leveling, when the adhesive strength relative to the glass is 100 grams force/inch (gf/inch) Or when it is more than 100 grams force/inch, use a laminator to laminate the UV cut film on the adhesive layer. The ultraviolet cut-off was manufactured by coating an optical PET film (V5400 manufactured by SKC Corporation) with a thickness of 188 microns with a composition containing 1.0 part by weight of an ultraviolet absorber and drying the optical PET film at 100°C for 10 minutes membrane. The composition for forming the second adhesive layer was applied to the top of the ultraviolet cut-off film, and the ultraviolet cut-off film was allowed to stand at room temperature for 48 hours.

藉由用DY-39-067(陶氏化學公司(Dow Chemical))塗佈膜的兩個表面,使紫外線截止膜在室溫下靜置了90分鐘,以改善與矽酮黏著劑的黏著力,並且藉由向100重量份的包含含乙烯基的聚二甲基矽氧烷樹脂的斯爾歌德(Sylgard)184A(陶氏化學公司,固體含量:100重量%)中的包含固化劑的10重量份的Sylgard 184B(陶氏化學公司,固體含量:100重量%)中添加50重量份的甲基乙基酮、並攪拌所得混合物而製備了第一黏著劑層及第二黏著劑層的組成物。 實例 2> By coating both surfaces of the film with DY-39-067 (Dow Chemical), the UV cut film was allowed to stand at room temperature for 90 minutes to improve the adhesion to the silicone adhesive And by adding 100 parts by weight of Sylgard 184A (The Dow Chemical Company, solid content: 100% by weight) containing a vinyl-containing polydimethylsiloxane resin containing a curing agent 50 parts by weight of methyl ethyl ketone was added to Sylgard 184B (Dow Chemical Company, solid content: 100% by weight), and the resulting mixture was stirred to prepare the composition of the first adhesive layer and the second adhesive layer Things. < Example 2>

除了在實例1中使用層疊在第一黏著劑層頂部上的紫外線截止膜作為塗佈有包含2.0重量份的紫外線吸收劑的組成物的PMMA膜之外,以與實例1中相同的方式執行了製程。 實例 3> It was performed in the same manner as in Example 1, except that the ultraviolet cut-off film laminated on top of the first adhesive layer was used as the PMMA film coated with the composition containing 2.0 parts by weight of the ultraviolet absorber in Example 1. Process. < Example 3>

除了在實例1中使用塗佈有包含2.0重量份的紫外線吸收劑的組成物的PET膜作為層疊在第一黏著劑層頂部上的紫外線截止膜之外,以與實例1中相同的方式執行了製程。 比較例 1> It was performed in the same manner as in Example 1, except that a PET film coated with a composition containing 2.0 parts by weight of an ultraviolet absorber was used as the ultraviolet cut-off film laminated on top of the first adhesive layer in Example 1. Process. < Comparative example 1>

除了在實例1中將厚度為188微米的光學PET膜(由SKC公司製造的V5400)層疊在第一黏著劑層的頂部上之外,以與實例1中相同的方式執行了製程。 實例 4> Except that an optical PET film (V5400 manufactured by SKC Corporation) with a thickness of 188 μm was laminated on top of the first adhesive layer in Example 1, the process was performed in the same manner as in Example 1. < Example 4>

除了在實例1中使用銅箔層疊膜代替鍍Cu膜作為電極膜的原材料之外,以與實例1中相同的方式執行了製程。The process was performed in the same manner as in Example 1, except that a copper foil laminated film was used instead of the Cu-plated film as the raw material of the electrode film in Example 1.

銅箔層疊膜一般而言是具有與作為覆銅層疊體(Cu clad laminated,CCL)而被眾所習知的結構相同的結構的銅膜,並且藉由在透明基板上形成結合層、且然後與銅箔執行熱層疊來製備。藉由以35:33:30的重量比引入矽烷改質的環氧樹脂、雙酚A環氧樹脂及苯氧基樹脂、並用甲基乙基酮(methyl ethyl ketone,MEK)稀釋所得的混合物而製備了用於結合層的塗佈溶液。使所製備的溶液在厚度為100微米的PET膜上經受逗點塗佈(comma coating),並在130℃下經受3分鐘的高溫乾燥製程,以形成厚度為25微米的結合層。藉由使厚度為8微米的銅箔(由日進材料有限公司(ILJIN MATERIALS CO. LTD.)製造的LPF)與結合層在100℃的溫度下經受輥式層疊(roll lamination)而製備了銅箔層疊膜。在100℃的溫度下將乾膜抗蝕劑熱層疊到了所製造的銅箔層疊膜的銅箔的頂部上,並且使用對應於第一金屬箔圖案及第二金屬箔圖案的負型光遮罩及準直曝光裝置以250毫焦耳/平方公分的光強度暴露於波長為365奈米的紫外光。藉由顯影-蝕刻-剝落的濕法製程在結合層的頂部上形成了具有不平整結構的金屬圖案。將每個步驟中使用的所有溶液都保持在了室溫下。使用1.0重量%的Na2 CO3 水溶液作為顯影溶液,蝕刻劑為包含氯化鐵及鹽酸的混合溶液,且剝離溶液為2.0重量%的NaOH水溶液。為了平坦化結合層的表面並將金屬圖案嵌入於結合層中,使用輥式層疊機在100℃下熱層疊了金屬圖案膜及厚度為50微米的離型PET膜(由韓國澳帝樺(OPTIVER Korea)製造的SLF050-060)。在層疊有離型膜的狀態下執行了紫外線固化,並用波長為365奈米的紫外光以5,000毫焦耳/平方公分的光強度輻照了PET膜的表面。 實例 5> The copper foil laminated film is generally a copper film having the same structure as the structure known as a copper clad laminate (Cu clad laminated, CCL), and by forming a bonding layer on a transparent substrate, and then It is prepared by performing thermal lamination with copper foil. By introducing silane-modified epoxy resin, bisphenol A epoxy resin and phenoxy resin in a weight ratio of 35:33:30, and diluting the resulting mixture with methyl ethyl ketone (MEK) A coating solution for the bonding layer was prepared. The prepared solution was subjected to comma coating on a PET film with a thickness of 100 microns, and subjected to a high-temperature drying process at 130° C. for 3 minutes to form a bonding layer with a thickness of 25 microns. The copper foil was prepared by subjecting a copper foil (LPF manufactured by ILJIN MATERIALS CO. LTD.) and the bonding layer to a thickness of 8 microns to a roll lamination at a temperature of 100°C. Laminated film. The dry film resist was thermally laminated on the top of the copper foil of the manufactured copper foil laminate film at a temperature of 100°C, and a negative photomask corresponding to the first metal foil pattern and the second metal foil pattern was used And the collimated exposure device is exposed to ultraviolet light with a wavelength of 365 nanometers at a light intensity of 250 millijoules/cm². A metal pattern with uneven structure is formed on the top of the bonding layer by a wet process of developing-etching-peeling. Keep all the solutions used in each step at room temperature. A 1.0% by weight Na 2 CO 3 aqueous solution was used as the developing solution, the etchant was a mixed solution containing ferric chloride and hydrochloric acid, and the peeling solution was a 2.0% by weight NaOH aqueous solution. In order to flatten the surface of the bonding layer and embed the metal pattern in the bonding layer, a roll laminator was used to heat-laminate the metal pattern film and a release PET film with a thickness of 50 microns at 100°C (by OPTIVER Korea) SLF050-060). Ultraviolet curing was performed with the release film laminated, and the surface of the PET film was irradiated with ultraviolet light with a wavelength of 365 nanometers at a light intensity of 5,000 millijoules/cm². < Example 5>

除了在實例4中使用層疊在第一黏著劑層頂部上的紫外線截止膜作為塗佈有包含2.0重量份的紫外線吸收劑的組成物的PMMA膜之外,以與實例4中相同的方式執行了製程。 實例 6> It was performed in the same manner as in Example 4 except that the ultraviolet cut-off film laminated on top of the first adhesive layer was used as the PMMA film coated with the composition containing 2.0 parts by weight of the ultraviolet absorber in Example 4 Process. < Example 6>

除了在實例4中使用層疊在第一黏著劑層頂部上的紫外線截止膜作為塗佈有包含2.0重量份的紫外線吸收劑的組成物的PET膜作之外,以與實例4中相同的方式執行了製程。 比較例 2> Except that the UV cut film laminated on top of the first adhesive layer was used in Example 4 as the PET film coated with the composition containing 2.0 parts by weight of the UV absorber, it was performed in the same manner as in Example 4.了 Process. Comparative example 2>

除了在實例4中將厚度為188微米的光學PET膜(由SKC公司製造的V5400)層疊在第一黏著劑層的頂部上之外,以與實例4中相同的方式執行了製程。 實驗例 1> Except that an optical PET film (V5400 manufactured by SKC Corporation) with a thickness of 188 μm was laminated on top of the first adhesive layer in Example 4, the process was performed in the same manner as in Example 4. < Experimental example 1>

評估了在實例1至實例6中應用的紫外線截止膜及在比較例1及比較例2中應用的一般光學PET的光學特性,並示出於下表1及表3中。使用固體規格-3700(Solid spec-3700)裝置量測了光學特性。 [表1] 分類 膜類型 UV 吸收劑重量份 透射率 b* YI UVA (365 nm) 可見光 (380 nm至780 nm) UV截止膜#1 (在實例1及實例4中的應用) PET 1.0 7.2 90.5 0.62 1.20 UV截止膜#2 (在實例2及實例5中的應用) PMMA 2.0 0.0 90.8 1.00 1.59 UV截止膜#3 (在實例3及實例6中的應用) PET 2.0 0.8 91.7 0.40 0.72 裸PET膜 (在比較例1及比較例24中的應用) PET 0.0 83.7 89.9 0.36 0.82 The optical properties of the ultraviolet cut-off films used in Examples 1 to 6 and the general optical PET used in Comparative Examples 1 and 2 were evaluated, and are shown in Table 1 and Table 3 below. The optical properties were measured using a solid spec-3700 (Solid spec-3700) device. [Table 1] classification Membrane type Parts by weight of UV absorber Transmittance b* YI UVA (365 nm) Visible light (380 nm to 780 nm) UV cut-off film #1 (application in example 1 and example 4) PET 1.0 7.2 90.5 0.62 1.20 UV cut-off film #2 (application in example 2 and example 5) PMMA 2.0 0.0 90.8 1.00 1.59 UV cut-off film #3 (application in example 3 and example 6) PET 2.0 0.8 91.7 0.40 0.72 Bare PET film (application in Comparative Example 1 and Comparative Example 24) PET 0.0 83.7 89.9 0.36 0.82

作為量測光學性質的結果,可確認紫外線截止塗佈液組成物中紫外線吸收劑的重量份越高,則在UVA區域中的透光率變得越低,並且b*及YI值降低,而無論塗佈基板如何。 實驗例 2> As a result of measuring the optical properties, it can be confirmed that the higher the weight part of the ultraviolet absorber in the ultraviolet cut coating liquid composition, the lower the light transmittance in the UVA region becomes, and the b* and YI values decrease, and Regardless of the coated substrate. < Experimental example 2>

評估了在實例1至實例6及比較例1及比較例2中製備的透明發光裝置顯示器的黃色指數根據耐光性評估時間的變化,且結果示於下表2及圖4及圖5中。 耐光性評估裝置:由Q-LAB有限公司製造的QUV(光強度:750毫瓦/平方米) 光學性質量測裝置:COH-400(由日本電色工業株式會社(Nippon Denshoku Industries Co., Ltd.)製造) [表2] 黃色指數 耐光性評估(小時) 0 80 200 330 1,000 實例1 6.97 7.21 7.46 7.80 9.57 實例2 6.99 7.04 7.22 7.33 8.07 實例3 6.28 6.36 6.37 6.52 7.14 實例4 4.44 5.66 7.32 9.48 10.70 實例5 4.32 4.33 4.68 4.92 6.08 實例6 3.68 3.86 4.18 4.50 5.65 比較例1 6.23 8.27 10.07 11.84 16.90 比較例2 3.95 14.75 18.95 20.92 25.43 The changes in the yellow index of the transparent light emitting device displays prepared in Examples 1 to 6 and Comparative Examples 1 and 2 according to the light resistance evaluation time were evaluated, and the results are shown in Table 2 below and in FIGS. 4 and 5. Light resistance evaluation device: QUV (light intensity: 750 mW/m²) manufactured by Q-LAB Co., Ltd. Optical quality measuring device: COH-400 (made by Nippon Denshoku Industries Co., Ltd .) Manufacturing) [Table 2] Yellow index Lightfastness evaluation (hours) 0 80 200 330 1,000 Example 1 6.97 7.21 7.46 7.80 9.57 Example 2 6.99 7.04 7.22 7.33 8.07 Example 3 6.28 6.36 6.37 6.52 7.14 Example 4 4.44 5.66 7.32 9.48 10.70 Example 5 4.32 4.33 4.68 4.92 6.08 Example 6 3.68 3.86 4.18 4.50 5.65 Comparative example 1 6.23 8.27 10.07 11.84 16.90 Comparative example 2 3.95 14.75 18.95 20.92 25.43

如所述結果所示,可確認紫外線截止膜的UVA區域中的透光率越低,則由紫外線暴露引起的產品黃化越少。具體而言,由於在嵌入式電極膜中使用的結合層被紫外線嚴重黃化,因此防止黃化的效果大於突出電極膜的效果。As shown in the results, it can be confirmed that the lower the light transmittance in the UVA region of the ultraviolet cut film, the less yellowing of the product caused by ultraviolet exposure. Specifically, since the bonding layer used in the embedded electrode film is severely yellowed by ultraviolet rays, the effect of preventing yellowing is greater than the effect of protruding the electrode film.

如所述結果所示,根據本申請案的示例性實施例,透明發光裝置顯示器可包括紫外線截止膜,藉此防止構成透明發光裝置顯示器的組件由於紫外線而劣化。此外,根據本申請案的示例性實施例,可在第一透明黏著劑層上包括紫外線截止膜,藉此平坦化包括第一透明黏著劑層的結構,且因此,可確保透明發光裝置顯示器的外觀特性。As shown by the results, according to an exemplary embodiment of the present application, the transparent light emitting device display may include an ultraviolet cut-off film, thereby preventing the components constituting the transparent light emitting device display from being degraded due to ultraviolet rays. In addition, according to the exemplary embodiment of the present application, an ultraviolet cut-off film may be included on the first transparent adhesive layer, thereby planarizing the structure including the first transparent adhesive layer, and therefore, the transparent light emitting device display can be ensured Appearance characteristics.

10:透明基板 20:導電金屬圖案 30:發光裝置 40:第一透明黏著劑層 50:紫外線截止膜 60:第二透明黏著劑層 70:結合層 80:玻璃 90:黏著劑層 100:保護膜 110:撓性印刷電路板(FPCB)10: Transparent substrate 20: conductive metal pattern 30: Light-emitting device 40: The first transparent adhesive layer 50: UV cut film 60: second transparent adhesive layer 70: Bonding layer 80: glass 90: Adhesive layer 100: Protective film 110: Flexible printed circuit board (FPCB)

圖1及圖2是示意性示出根據本申請案示例性實施例的透明發光裝置顯示器的視圖。 圖3是示出根據本申請案的示例性實施例,在實例及比較例中應用的紫外線截止膜及一般光學膜的光學特性的視圖。 圖4是示出作為本申請案示例性實施例的實例1至實例3及比較例1中的透明發光裝置顯示器的耐光性評估結果的視圖。 圖5是示出作為本申請案示例性實施例的實例4至實例6及比較例2中的透明發光裝置顯示器的耐光性評估結果的視圖。1 and 2 are views schematically showing a transparent light emitting device display according to an exemplary embodiment of the present application. 3 is a view showing optical characteristics of ultraviolet cut-off films and general optical films used in Examples and Comparative Examples according to exemplary embodiments of the present application. 4 is a view showing the results of light resistance evaluation of transparent light emitting device displays in Examples 1 to 3 and Comparative Example 1 as exemplary embodiments of the present application. FIG. 5 is a view showing light resistance evaluation results of transparent light-emitting device displays in Examples 4 to 6 and Comparative Example 2 as exemplary embodiments of the present application.

10:透明基板 10: Transparent substrate

20:導電金屬圖案 20: conductive metal pattern

30:發光裝置 30: Light-emitting device

40:第一透明黏著劑層 40: The first transparent adhesive layer

50:紫外線截止膜 50: UV cut film

60:第二透明黏著劑層 60: second transparent adhesive layer

80:玻璃 80: glass

90:黏著劑層 90: Adhesive layer

100:保護膜 100: Protective film

110:撓性印刷電路板(FPCB) 110: Flexible printed circuit board (FPCB)

Claims (13)

一種透明發光裝置顯示器,包括: 透明基板; 導電金屬圖案,設置在所述透明基板上; 發光裝置,設置在所述導電金屬圖案的至少一部分上; 第一透明黏著劑層,設置在所述透明基板、所述導電金屬圖案及所述發光裝置上; 紫外線截止膜,設置在所述第一透明黏著劑層上;以及 第二透明黏著劑層,設置在所述紫外線截止膜上。A transparent light-emitting device display, including: Transparent substrate A conductive metal pattern arranged on the transparent substrate; A light emitting device arranged on at least a part of the conductive metal pattern; The first transparent adhesive layer is disposed on the transparent substrate, the conductive metal pattern and the light-emitting device; An ultraviolet cut-off film, arranged on the first transparent adhesive layer; and The second transparent adhesive layer is arranged on the ultraviolet cut-off film. 如請求項1所述的透明發光裝置顯示器,其中所述紫外線截止膜在可見光區域(380奈米≦λ≦780奈米)中具有85%或大於85%的透射率,並且 在紫外線(λ<380奈米)區域中具有小於1%的透射率。The transparent light-emitting device display according to claim 1, wherein the ultraviolet cut-off film has a transmittance of 85% or more in the visible light region (380nm≦λ≦780nm), and It has a transmittance of less than 1% in the ultraviolet (λ<380nm) region. 如請求項1所述的透明發光裝置顯示器,其中所述紫外線截止膜是包含紫外線吸收劑的透明膜。The transparent light-emitting device display according to claim 1, wherein the ultraviolet cut-off film is a transparent film containing an ultraviolet absorber. 如請求項1所述的透明發光裝置顯示器,其中所述紫外線截止膜包括:透明膜;以及紫外線截止塗層,設置在所述透明膜上。The transparent light emitting device display according to claim 1, wherein the ultraviolet cut-off film includes: a transparent film; and an ultraviolet cut-off coating provided on the transparent film. 如請求項1所述的透明發光裝置顯示器,更包括: 結合層,位於所述透明基板與所述導電金屬圖案之間。The transparent light-emitting device display according to claim 1, further comprising: The bonding layer is located between the transparent substrate and the conductive metal pattern. 如請求項1所述的透明發光裝置顯示器,更包括: 結合層,位於所述透明基板上, 其中所述導電金屬圖案以嵌入於所述結合層中的形式設置。The transparent light-emitting device display according to claim 1, further comprising: The bonding layer is located on the transparent substrate, The conductive metal pattern is arranged in a form of being embedded in the bonding layer. 如請求項6所述的透明發光裝置顯示器,其中以嵌入於所述結合層中的所述形式設置的所述導電金屬圖案的至少一部分被設置成與所述發光裝置接觸。The transparent light-emitting device display according to claim 6, wherein at least a part of the conductive metal pattern provided in the form embedded in the bonding layer is provided in contact with the light-emitting device. 如請求項5或6所述的透明發光裝置顯示器,其中所述結合層包含熱固性結合劑組成物或可紫外線固化結合劑組成物、或其固化產物。The transparent light-emitting device display according to claim 5 or 6, wherein the bonding layer comprises a thermosetting bonding agent composition or an ultraviolet curable bonding agent composition, or a cured product thereof. 如請求項1所述的透明發光裝置顯示器,其中所述導電金屬圖案包括佈線電極部分圖案及發光裝置安裝部分圖案,並且 所述發光裝置設置在所述發光裝置安裝部分圖案上。The transparent light-emitting device display according to claim 1, wherein the conductive metal pattern includes a wiring electrode part pattern and a light-emitting device mounting part pattern, and The light emitting device is arranged on the pattern of the light emitting device mounting portion. 如請求項9所述的透明發光裝置顯示器,其中所述佈線電極部分圖案具有50微米或小於50微米的線寬,並且 所述發光裝置安裝部分圖案具有100微米或大於100微米的線寬。The transparent light-emitting device display according to claim 9, wherein the wiring electrode part pattern has a line width of 50 microns or less, and The light-emitting device mounting portion pattern has a line width of 100 microns or more. 如請求項1所述的透明發光裝置顯示器,其中所述導電金屬圖案包含金、銀、鋁、銅、釹、鉬、鎳或其合金。The transparent light-emitting device display according to claim 1, wherein the conductive metal pattern includes gold, silver, aluminum, copper, neodymium, molybdenum, nickel or alloys thereof. 如請求項1所述的透明發光裝置顯示器,其中所述導電金屬圖案具有3微米至20微米的厚度。The transparent light-emitting device display according to claim 1, wherein the conductive metal pattern has a thickness of 3 to 20 microns. 如請求項1所述的透明發光裝置,其中所述第一透明黏著劑層及所述第二透明黏著劑層各自獨立地包含矽酮系材料、丙烯酸系材料、胺基甲酸酯系材料及其衍生物中的一或多者。The transparent light-emitting device according to claim 1, wherein the first transparent adhesive layer and the second transparent adhesive layer each independently include a silicone-based material, an acrylic-based material, a urethane-based material, and One or more of its derivatives.
TW109108675A 2019-03-27 2020-03-17 Transparent light emitting device display TWI761789B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0035155 2019-03-27
KR1020190035155A KR20200114055A (en) 2019-03-27 2019-03-27 Transparent light emitting device display

Publications (2)

Publication Number Publication Date
TW202040809A true TW202040809A (en) 2020-11-01
TWI761789B TWI761789B (en) 2022-04-21

Family

ID=72608616

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109108675A TWI761789B (en) 2019-03-27 2020-03-17 Transparent light emitting device display

Country Status (6)

Country Link
US (1) US20220190221A1 (en)
JP (1) JP7233802B2 (en)
KR (1) KR20200114055A (en)
CN (1) CN113574685A (en)
TW (1) TWI761789B (en)
WO (1) WO2020197112A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11947236B2 (en) * 2021-04-27 2024-04-02 GM Global Technology Operations LLC High contrast transparent display with automatic shading
WO2024049582A1 (en) * 2022-08-31 2024-03-07 Lumileds Llc Devices and methods preventing degradation of light emitting structures
WO2024075856A1 (en) * 2022-10-04 2024-04-11 엘지전자 주식회사 Transparent display device using light-emitting diode

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804102A (en) * 1995-12-22 1998-09-08 Mitsui Chemicals, Inc. Plasma display filter
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
KR20020044160A (en) * 2000-08-09 2002-06-14 사토 아키오 Optical members made of polyimide resins
JP4815768B2 (en) * 2003-08-22 2011-11-16 旭硝子株式会社 Display device and manufacturing method of display device
KR100872615B1 (en) * 2006-03-27 2008-12-09 도시바 라이텍쿠 가부시키가이샤 Ultraviolet cut material, Ultraviolet cut filter, discharge lamp and lighting apparatus
JP5266643B2 (en) * 2007-01-10 2013-08-21 凸版印刷株式会社 Letterpress for printing and method for producing letterpress for printing
JP2009158691A (en) * 2007-12-26 2009-07-16 Sharp Corp Organic device and manufacturing method thereof
JP2011071272A (en) * 2009-09-25 2011-04-07 Toshiba Corp Semiconductor light-emitting device and method for manufacturing the same
JP2011070090A (en) * 2009-09-28 2011-04-07 Toppan Printing Co Ltd Letterpress plate for letterpress printing and printing method
JP5762357B2 (en) * 2011-06-10 2015-08-12 富士フイルム株式会社 Coloring composition for electrowetting display, image display structure, and electrowetting display device
JP5823373B2 (en) * 2011-12-26 2015-11-25 富士フイルム株式会社 Coloring composition and image display structure
CN102646696B (en) * 2012-01-16 2014-10-22 京东方科技集团股份有限公司 Organic light-emitting diode display device, manufacturing method thereof and display system
KR20140002224A (en) * 2012-06-28 2014-01-08 코오롱인더스트리 주식회사 Transparent diplay module
KR101469485B1 (en) * 2012-08-13 2014-12-05 엘지디스플레이 주식회사 Organic Emitting Display Device and Method for Manufacturing the Same
TW201503442A (en) * 2013-07-03 2015-01-16 Formosen Material Technology Corp Flexible transparent organic light emitting diode lighting device and transparent liquid crystal display device using the same as backlight
KR20150033169A (en) 2013-09-23 2015-04-01 엘지디스플레이 주식회사 Light emitting diode package and liquid crystal display device using the same
CN105518885B (en) * 2013-12-02 2018-02-16 东芝北斗电子株式会社 Light-emitting device
CN106103095B (en) * 2014-03-21 2018-04-10 乐金显示有限公司 Encapsulate layered product, organic luminescent device and the manufacture method of the body and device
CN105446508B (en) * 2014-06-19 2018-12-25 宸鸿科技(厦门)有限公司 Touch control display apparatus
JP2018504622A (en) * 2014-11-11 2018-02-15 三星エスディアイ株式会社SAMSUNG SDI Co., LTD. Display window film and display device including the same
JP6419213B2 (en) * 2014-12-09 2018-11-07 三井化学株式会社 Surface sealing material for organic EL element and cured product thereof
JP6633622B2 (en) * 2015-05-01 2020-01-22 東芝ホクト電子株式会社 Light emitting module
JP6620464B2 (en) * 2015-08-26 2019-12-18 大日本印刷株式会社 Flexible transparent substrate and see-through type LED display device using the same
JP3203462U (en) * 2016-01-19 2016-03-31 株式会社スリーエス Display device
KR102027567B1 (en) * 2016-02-19 2019-10-01 삼성에스디아이 주식회사 Functional optical film and transparent display apparatus comprising the same
KR20170139924A (en) * 2016-06-10 2017-12-20 엘지전자 주식회사 Transparent light-emitting diode film
KR20180012679A (en) * 2016-07-27 2018-02-06 현상우 Transparent display apparatus and manufacturing method for the same
KR102605585B1 (en) * 2016-08-11 2023-11-24 삼성전자주식회사 Method of fabricating light emitting device package
US10763383B2 (en) * 2016-09-14 2020-09-01 The Boeing Company Nano-metal connections for a solar cell array
KR102008766B1 (en) * 2017-01-31 2019-08-09 주식회사 엘지화학 Laminate for manufacturing flexible substrate and process for manufacturing flexible substrate using same
JP2018185396A (en) * 2017-04-25 2018-11-22 株式会社K工房 LED display
KR102549995B1 (en) * 2017-05-05 2023-06-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Polymer films and display devices comprising such films
JP2018197830A (en) * 2017-05-25 2018-12-13 スタンレー電気株式会社 Transparent panel having light emitting function
US10665576B2 (en) * 2017-06-21 2020-05-26 Stanley Electric Co., Ltd. Optically transparent plate with light emitting function and method of producing the same
WO2019066336A1 (en) * 2017-09-26 2019-04-04 주식회사 엘지화학 Electrode substrate for transparent light-emitting diode display and method for manufacturing same
WO2020204176A1 (en) * 2019-04-03 2020-10-08 株式会社トクヤマ Photochromic optical article and method for manufacturing same
WO2021188044A1 (en) * 2020-03-19 2021-09-23 Panasonic Factory Solutions Asia Pacific A method and an apparatus for manufacturing a porous graphene layer across a precursor material layer on a substrate through thermally localized laser graphitisation
CA3178503A1 (en) * 2020-05-13 2021-11-18 National Research Council Of Canada Fiber bragg grating sensor in polymer-coated ultra-thin optical fibers and method for producing same

Also Published As

Publication number Publication date
KR20200114055A (en) 2020-10-07
US20220190221A1 (en) 2022-06-16
CN113574685A (en) 2021-10-29
JP2022524401A (en) 2022-05-02
WO2020197112A1 (en) 2020-10-01
JP7233802B2 (en) 2023-03-07
TWI761789B (en) 2022-04-21

Similar Documents

Publication Publication Date Title
TWI761789B (en) Transparent light emitting device display
KR102581899B1 (en) Transparent electrodes and electronic devices including the same
KR102202997B1 (en) Laminated structure manufacturing method, laminated structure, and electronic apparatus
TWI556269B (en) Transparent conductor, method for preparing the same and optical display including the same
CN201910421U (en) Planar structure for LED (light-emitting diode) device
JP2009059666A (en) Film with transparent conductive layer, flexible functional elements, and manufacturing methods therefor
JP6965436B2 (en) Embedded electrode substrate for transparent light emitting element display and its manufacturing method
TWI675244B (en) Electrode substrate for transparent light emitting device display and method for manufacturing thereof
KR102542685B1 (en) Film for lamination of transparent conductive layer, manufacturing method thereof, and transparent conductive film
CN104345929B (en) Touch-screen
JP2006202738A (en) Dispersed electroluminescence element and manufacturing method of the same
US11716818B2 (en) Embedded-type transparent electrode substrate and method for manufacturing same
TW201637842A (en) Film for stacking transparent conductive layer, manufacturing method thereof and transparent conductive film
KR20150034993A (en) Conductive coating composition containing metallic nanowires and forming method for conductive film using the same
JP2010020909A (en) Spontaneously light-emitting foldable sheet
KR20200118581A (en) Transparent substrate, embedded electrode substrate and method for manufacturing thereof
JP2009158953A (en) Wavelength conversion type light trapping film, wavelength conversion type light trapping film with mould film, and solar cell module using the same
JP2014079939A (en) Laminate film, and organic solar battery using the laminate film
KR20170036266A (en) Polyester film and manufacturing method thereof
JP6132699B2 (en) Transparent conductive sheet and touch panel using transparent conductive sheet
CN112738971A (en) Flexible circuit board containing transparent cover film and preparation method thereof
JP2008004502A (en) Dispersed electroluminescence element and its manufacturing method