TW202040679A - Substrate processing method and substrate processing system - Google Patents

Abstract

A substrate processing method includes a first etching step, a suspending step, and a second etching step. In the first etching step, a plurality of laminated layers including a silicon nitride layer are etched by supplying a first phosphorus liquid (L1) to a substrate (W) while the substrate (W) is rotated. The substrate (W) has a three-dimensional layered structure in which the laminated layers face each other with a void therethrough. In the suspending step, etching on the laminated layers in the first etching step is suspended in a state in which the silicon nitride layer remains. In the second etching step, suspended etching on the laminated layers is resumed with the substrate (W) immersed in a second phosphorus liquid (L2) reserved in a processing tank (310).

Description

Substrate processing method and substrate processing system

The present invention relates to a substrate processing method and a substrate processing system, which include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for organic EL (Electroluminescence), FED (Field Emission Display) substrates, substrates for optical displays, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, and substrates for solar cells (hereinafter referred to as substrates) are supplied with phosphoric acid solution To process.

The substrate processing for supplying and processing a processing solution containing phosphoric acid is performed, for example, to remove a silicon nitride film (SiN). The treatment liquid containing phosphoric acid can be used to control the concentration of silica in the treatment liquid, the temperature of the treatment liquid, the concentration, etc., while suppressing the etching of the silicon oxide film, while etching the silicon nitride film. Patent Document 1 describes that the silicon nitride film is selectively etched with respect to the silicon oxide film.

As a method of implementing such a substrate processing (hereinafter referred to as phosphoric acid etching) using a processing solution containing phosphoric acid, there is known a so-called single-chip processing using a single-chip processing device, which holds the substrate horizontally and one piece Processing the substrates piece by piece, and so-called batch processing performed by a batch processing device, processes the substrates by immersing the substrate in a processing tank in which a processing liquid has been stored.

For example, in batch processing, a plurality of substrates are placed on an elevator configured to hold the plurality of substrates in an upright posture, and the elevator is immersed in a processing tank, thereby processing the plurality of substrates at a time. Therefore, it has the advantage that the yield of batch processing is higher than that of single chip processing. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2018-133551

(The problem to be solved by the invention)

In recent years, in addition to the processing of substrates with three-dimensional structures, the high integration of three-dimensional NAND devices has caused the silicon precipitated by phosphoric acid etching to be implanted in the gaps between the pillars, which hinders the gap between the pillars. Etching replacement tends to make the problem of suppressing the etching of the deep part of the pattern more pronounced. Among them, the three-dimensional structure is formed on a substrate with a plurality of pillars of a laminated structure including a silicon nitride film. As mentioned above, because batch processing is to process a plurality of substrates collectively, the yield of batch processing is higher than that of single-chip processing. However, compared with single-chip processing, batch processing is difficult to finely control the flow state of the etchant on the substrate due to the structure of the batch processing device.

The present invention was completed in view of the above-mentioned problems, and its object is to provide a substrate processing method and a substrate processing system that can suppress the decrease in the yield of phosphoric acid treatment and suppress the precipitation of silicon-containing substances. (Technical means to solve the problem)

According to one aspect of the present invention, a substrate processing method includes a substrate holding step, a first etching step, an interrupting step, a moving step, and a second etching step. In the substrate holding step, the substrate is held by the substrate holding portion, and the substrate has a three-dimensional stacked structure in which a plurality of stacked layers including silicon nitride layers face each other through a gap. In the first etching step, while the substrate held by the substrate holding portion is rotated, the first phosphoric acid solution is supplied to the substrate to etch the plurality of build-up layers. In the interrupting step, the etching of the plurality of build-up layers performed in the first etching step is interrupted while the silicon nitride layer remains. In the moving step, the substrate is taken out from the substrate holding portion and moved toward the processing tank. In the second etching step, the substrate is immersed in the second phosphoric acid solution stored in the processing tank, and the etching of the plurality of stacked layers that has been interrupted is restarted.

In one embodiment, the first phosphoric acid solution contains silicon with a predetermined concentration before being supplied to the substrate. The second phosphoric acid solution contains silicon with a predetermined concentration before the substrate is immersed in the processing tank. The silicon concentration of the second phosphoric acid solution is set to be lower than the silicon concentration of the first phosphoric acid solution.

In one embodiment, in the first etching step, the silicon concentration of the first phosphoric acid solution remaining on the substrate or the first phosphoric acid solution flowing out of the substrate is measured, based on the measurement of the first phosphoric acid solution As a result of the measurement of the silicon concentration, the aforementioned interruption step is started.

In one embodiment, the interrupt step is started based on the measurement result being below a predetermined threshold value.

In one embodiment, the time from the start of the first etching step to the start of the interrupt step is based on the establishment of the etching process conditions of the first etching step and the time from the start of the first etching step to the start of the interrupt step The query form of the relationship is determined.

In one embodiment, the time for etching the substrate with the second phosphoric acid solution in the second etching step is longer than the time for etching the substrate with the first phosphoric acid solution in the first etching step.

In one embodiment, the temperature of the first phosphoric acid solution discharged toward the substrate is higher than the set temperature of the second phosphoric acid solution.

According to another aspect of the present invention, the substrate processing system processes a substrate having a three-dimensional layered structure in which a plurality of layers including silicon nitride layers are opposed to each other through a gap. The above-mentioned substrate processing system includes a single-chip processing device and a batch processing device. The single-chip processing apparatus includes: a substrate holding portion that holds the substrate; and a phosphoric acid solution supply portion that supplies a first phosphoric acid solution for performing a first etching process to the substrate. The substrate held by the substrate holding portion is rotated to perform etching of the plurality of build-up layers of the substrate. The batch processing apparatus has a processing tank for storing a second phosphoric acid solution for performing a second etching process, and the second etching process is interrupted by the first etching process in a state where the silicon nitride layer remains. After the etching of the above-mentioned multiple layers, the etching of the above-mentioned multiple layers that has been interrupted is restarted (Compared with the effect of previous technology)

According to the present invention, it is possible to suppress the decrease in the yield of phosphoric acid treatment and to suppress the precipitation of silicon-containing substances.

Hereinafter, embodiments of the substrate processing system and substrate processing method of the present invention will be described with reference to the drawings. In addition, in the drawings, the same or corresponding parts are given the same reference signs without repeating the description. Furthermore, in the specification of the present application, in order to facilitate the understanding of the invention, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are described. Typically, the X axis and Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

1, an embodiment of the substrate processing system 100 of the present invention will be described. FIG. 1 is a schematic diagram of a substrate processing system 100 of this embodiment.

The substrate processing system 100 processes the substrate W. The substrate processing system 100 processes the substrate W by performing at least one of etching, surface treatment, property addition, processing film formation, removal of at least a part of the film, and cleaning.

The substrate W has a relatively thin plate shape. Typically, the substrate W has a thin, substantially circular plate shape. The substrate W has a three-dimensional laminated structure in which a plurality of laminated layers including silicon nitride layers face each other through gaps. The details of the structure of the substrate W will be described later with reference to FIG. 3.

The substrate processing system 100 etches a plurality of build-up layers of the substrate W with phosphoric acid solution. Here, the substrate processing system 100 processes the substrates W one by one with the phosphoric acid solution, or collects a plurality of substrates W and performs etching with the phosphoric acid solution.

The substrate processing system 100 includes a single wafer processing device 200 and a batch processing device 300. Here, the single-chip processing apparatus 200 and the batch processing apparatus 300 are mutually arranged nearby. Typically, the single chip processing device 200 and the batch processing device 300 face each other. For example, the single-chip processing apparatus 200 and the batch processing apparatus 300 are surrounded and arranged by a continuous outer wall.

In the substrate processing system 100 of this embodiment, first, the single-chip processing apparatus 200 starts the etching of the plurality of build-up layers of the substrate W and interrupts in the middle, and then, the batch processing apparatus 300 restarts the etching of the plurality of build-up layers of the substrate W .

The single-chip processing apparatus 200 processes the substrates W one by one. Here, the single wafer processing apparatus 200 processes the substrate W with the phosphoric acid solution L1. In this specification, the phosphoric acid solution used for phosphoric acid treatment of the substrate W in the wafer processing apparatus 200 is described as phosphoric acid solution L1, and the phosphoric acid solution L1 may be described as the first phosphoric acid solution. In addition, in this specification, there is a description that the etching process first performed by the phosphoric acid solution L1 in the wafer processing apparatus 200 is described as the first etching process or the first etching step.

The wafer processing apparatus 200 supplies the phosphoric acid liquid L1 to the substrate W. Typically, the phosphoric acid liquid L1 is supplied to the substrate W while being heated to a high temperature. Typically, in the wafer processing apparatus 200, the substrate W is arranged such that the normal line of the main surface is parallel to the vertical direction (Z direction).

The wafer processing apparatus 200 includes a chamber 202, a substrate holding part 210, and a phosphoric acid solution supply part 220. The chamber 202 has a substantially box shape with an internal space. A substrate holding part 210 and a phosphoric acid solution supply part 220 are housed in the chamber 202.

In addition, the chamber 202 accommodates the substrate W. The substrates W are stored in the chamber 202 one by one. The substrate W is stored in the chamber 202 and processed in the chamber 202.

The substrate holding portion 210 holds the substrate W. In addition, the substrate holding portion 210 rotates together with the substrate W while holding the substrate W. For example, the substrate holding portion 210 may be a clamping type that clamps the end of the substrate W.

Alternatively, the substrate holding portion 210 may have any mechanism for holding the substrate W from the back surface. For example, the substrate holding portion 210 may also be a vacuum type. In this case, the substrate holding portion 210 holds the substrate W horizontally by adsorbing the center portion of the back surface (lower surface) of the substrate W, which is a non-element forming surface, to the upper surface. Alternatively, the substrate holding portion 210 may also be a combination of a clamping type and a vacuum type in which a plurality of chuck pins are brought into contact with the peripheral end surface of the substrate W.

The phosphoric acid liquid supply unit 220 supplies the phosphoric acid liquid L1 to the substrate W. By supplying the phosphoric acid liquid L1 to the substrate W by the phosphoric acid liquid supply part 220, the substrate W can be subjected to phosphoric acid treatment. For example, in a state where the substrate W held by the substrate holding unit 210 is rotated, the phosphoric acid liquid supply unit 220 supplies the phosphoric acid liquid L1 to the substrate W.

The phosphoric acid liquid L1 is, for example, an aqueous solution containing phosphoric acid as a main component. The concentration of phosphoric acid in the phosphoric acid liquid L1 is preferably 50% or more, more preferably 65% or more, and still more preferably 80% or more. However, the concentration of phosphoric acid in the phosphoric acid solution L1 can also be adjusted appropriately as needed.

The batch processing apparatus 300 processes the substrate W. The batch processing apparatus 300 collectively processes a plurality of substrates W. For example, the batch processing apparatus 300 collectively processes 5 or more and 100 or less substrates W. Here, the batch processing apparatus 300 processes the substrate W with the phosphoric acid solution L2. In this specification, the phosphoric acid solution used in the phosphoric acid treatment of the substrate W in the batch processing apparatus 300 is described as the phosphoric acid solution L2, and the phosphoric acid solution L2 may be described as the second phosphoric acid solution. In addition, in this specification, the etching process performed by the phosphoric acid solution L2 in the batch processing apparatus 300 after the first etching process may be described as the second etching process or the second etching step. In addition, in this specification, the phosphoric acid liquid L1 and the phosphoric acid liquid L2 may be included and described as the phosphoric acid liquid L.

The batch processing apparatus 300 immerses the substrate W in the stored phosphoric acid liquid L2. The phosphoric acid liquid L2 is heated to a high temperature. Typically, in the batch processing apparatus 300, the substrate W is arranged such that the normal line of the main surface becomes the vertical direction (here, the Y direction) with respect to the vertical direction.

The phosphoric acid liquid L2 is, for example, an aqueous solution containing phosphoric acid as a main component. The concentration of phosphoric acid in the phosphoric acid liquid L2 is preferably 50% or more, more preferably 65% or more, and still more preferably 80% or more. However, the concentration of phosphoric acid in the phosphoric acid solution L2 can also be adjusted appropriately as needed.

The phosphoric acid liquid L may contain sulfuric acid in addition to phosphoric acid which is the main component. By changing the concentration balance of phosphoric acid and sulfuric acid, the etching rate of the silicon nitride layer can be maintained high, and the etching of the silicon oxide layer can be suppressed. The etching rate of the silicon nitride layer and/or the ratio (selection ratio) of the etching rate of the silicon nitride layer and the silicon oxide layer is in addition to the concentration and/or temperature of the phosphoric acid solution L, and is also matched with the phosphoric acid solution L The silicon concentration varies.

Furthermore, the concentration of phosphoric acid in phosphoric acid solution L2 can also be equal to the concentration of phosphoric acid in phosphoric acid solution L1. In addition, the phosphoric acid concentration in phosphoric acid solution L2 can also be higher than that in phosphoric acid solution L1. Or, the phosphoric acid concentration in phosphoric acid solution L2 may be lower than that in phosphoric acid solution L1.

The batch processing device 300 includes a processing tank 310 and a stowage part 320. The processing tank 310 stores phosphoric acid liquid. A plurality of substrates W can be stored on the storage portion 320. The stowage part 320 is immersed in the processing tank 310 in a state where a plurality of substrates W are loaded. Thereby, a plurality of substrates W are collected and processed in batches.

The silicon nitride layer of the substrate W is etched by the phosphoric acid treatment in the single-chip processing device 200 and the batch processing device 300. The etching rate of the silicon nitride layer varies with the temperature of the phosphoric acid solution L. The higher the temperature of the phosphoric acid solution L, the more the etching rate of the silicon nitride layer increases.

The temperature of phosphoric acid liquid L2 can also be equal to the temperature of phosphoric acid liquid L1. In this case, the etching rate of the substrate W in the single-piece processing can be approximately equal to the etching rate of the substrate W in the batch processing. For example, set the temperature of phosphoric acid solution L1 to 150°C to 180°C, and set the temperature of phosphoric acid solution L2 to 150°C to 180°C.

Furthermore, the temperature of the phosphoric acid liquid L1 may fall between the phosphoric acid liquid supply part 220 and the substrate W. Therefore, in order to make the etching rate of the phosphoric acid treatment in the monolithic processing apparatus 200 equal to the etching rate of the phosphoric acid treatment in the batch processing apparatus 300, the temperature of the phosphoric acid liquid L1 is adjusted outside the chamber 202 in the monolithic processing apparatus 200 In this case, it is preferable to set the set temperature of the phosphoric acid liquid L1 in the single-chip processing apparatus 200 to be higher than the temperature of the phosphoric acid liquid L2 in the processing tank 310 of the batch processing apparatus 300. For example, set the temperature of phosphoric acid solution L1 to 165°C to 195°C, and set the temperature of phosphoric acid solution L2 to 150°C to 180°C. In this way, by setting the temperature of the phosphoric acid liquid L1 discharged toward the substrate W in the wafer processing apparatus 200 to be higher than the set temperature of the phosphoric acid liquid L2, the temperature of the phosphoric acid liquid L1 and the substrate W can be made to be the same The temperature is roughly equal. However, the temperature of the phosphoric acid liquid L1 can also be lower than the temperature of the phosphoric acid liquid L2.

Furthermore, in the case of processing the substrate W with the phosphoric acid solution L, when there is a silicon oxide layer on the substrate W, the silicon oxide layer may be etched together with the silicon nitride layer by the phosphoric acid solution L. In addition, in the case of processing the substrate W with the phosphoric acid solution L, when there is a polysilicon film on the substrate W, the polysilicon film may be etched together with the silicon nitride layer by the phosphoric acid solution L.

Typically, when the concentration of phosphoric acid solution L is higher, the etching selection ratio of phosphoric acid solution L (etching depth of silicon nitride layer/etching depth of silicon oxide layer and etching depth of silicon nitride layer/etching depth of polysilicon film) ) Will decrease in inverse proportion. Therefore, in the case of etching the silicon nitride layer with a higher etching selection ratio, it is preferable that the concentration of the phosphoric acid solution L be lower. For example, when the concentration of phosphoric acid in the phosphoric acid solution L is below 85%, the silicon nitride layer can be etched with a higher etching selection ratio.

In addition, it is preferable to dissolve silicon in the phosphoric acid solution L to set the silicon concentration of the phosphoric acid solution L. The higher the silicon concentration of the phosphoric acid solution L, the more the etching rate of the silicon oxide layer can be reduced. Therefore, in order to increase the etching selection ratio, it is preferable to increase the silicon concentration of the phosphoric acid solution L.

On the other hand, by etching the silicon nitride layer, silicon produced as a reactant is eluted into the phosphoric acid solution L. Thereby, around the etching part of the silicon nitride layer, the silicon concentration contained in the phosphoric acid solution L increases locally. When the silicon concentration exceeds the silicon solubility in the phosphoric acid solution L, silicon is precipitated.

In the single-wafer processing, it is easy to perform processing in a manner that efficiently replaces the processing liquid on the pattern of the substrate W on the substrate W on the structure of the single-wafer processing apparatus. Therefore, even if the concentration of silicon contained in the phosphoric acid solution L on the substrate W temporarily exceeds the silicon solubility of the phosphoric acid solution L, it is easier to flow the phosphoric acid solution L before precipitation. Therefore, in the single-chip processing, even if the concentration of silicon contained in the phosphoric acid solution L is set to a higher value, the phosphoric acid solution L on the substrate W can still flow efficiently and be replaced, and it can be Avoid or inhibit silicon precipitation.

Here, the higher the silicon concentration, the more selective the silicon nitride layer can be etched. Therefore, it is preferable to set the silicon concentration contained in the phosphoric acid solution L to a higher value in the single-chip processing.

On the other hand, in batch processing, since a plurality of substrates W are arranged facing each other in the processing tank, it is difficult to cover the entire surface of each substrate W and generate a flow of processing liquid on the substrate W in a vertical direction. Therefore, in the deep portion of the pattern recess formed on the substrate W, the replacement property of the processing liquid is poor. Therefore, if the silicon concentration contained in the phosphoric acid solution L on the substrate W temporarily exceeds the silicon solubility of the phosphoric acid solution L, there is a high possibility that silicon will directly precipitate inside the pattern.

Therefore, even if the silicon concentration is higher, the silicon nitride layer can be etched more selectively. In batch processing, setting the silicon concentration contained in the phosphoric acid solution L to a higher value is accompanied by silicon precipitation. The risk. Therefore, the silicon concentration of phosphoric acid solution L2 is preferably set to be lower than that of phosphoric acid solution L1. For example, the predetermined silicon concentration set in advance before the substrate W is immersed in the processing tank 310 as the phosphoric acid solution L2 may be set to be higher than the predetermined silicon concentration set in advance before the phosphoric acid solution L1 is supplied to the substrate W Lower. However, the silicon concentration of phosphoric acid solution L1 can also be equal to the silicon concentration of phosphoric acid solution L2. Alternatively, the silicon concentration of phosphoric acid solution L1 can be lower than that of phosphoric acid solution L2.

Furthermore, as shown in FIG. 1, when the substrate processing system 100 includes a single-chip processing device 200 and a batch processing device 300, the single-chip processing device 200 preferably includes a plurality of single-chip processing units. With a plurality of single chip processing units, different substrates W can be processed in a single chip in the same time zone.

In the substrate processing system 100 shown in FIG. 1, the single chip processing apparatus 200 includes a single chip processing section 200A, a single chip processing section 200B, a single chip processing section 200C, and a single chip processing section 200D. Each of the single chip processing units 200A to 200D can process the substrate W one by one. Therefore, in the substrate processing system 100, the single-chip processing apparatus 200 can process four substrates W in the same time zone. Each of the single chip processing sections 200A to 200D includes a chamber 202, a substrate holding section 210, and a phosphoric acid solution supply section 220.

According to the substrate processing system 100 of this embodiment, the reduction in the yield of phosphoric acid treatment can be suppressed, and the precipitation of silicon-containing substances can be suppressed. In the case of performing phosphoric acid treatment on the substrate W only by single-chip processing, although the yield of the substrate W is low, the concentration of silicon in the phosphoric acid solution is difficult to increase. On the other hand, when the substrate W is subjected to phosphoric acid treatment only by batch processing, although the yield is high, the silicon concentration of the phosphoric acid solution is locally increased, and there are cases where silicon-containing substances are deposited on the substrate W. . In particular, when the silicon concentration of the phosphoric acid solution L is set to be high in advance in order to increase the selection ratio, the silicon concentration tends to increase locally, and silicon-containing substances are likely to precipitate.

For example, when the temperature and composition of the phosphoric acid solution during the phosphoric acid treatment period are constant, the silicon nitride layer dissolves more in the early stage of the phosphoric acid treatment period, and the silicon nitride layer dissolves less after the middle period. . Therefore, in the substrate processing system 100 of this embodiment, in the initial stage of the phosphoric acid treatment period, the substrate W is subjected to single-chip treatment to suppress the precipitation of silicon-containing substances, and after the etching is temporarily interrupted, the substrate W is subjected to Batch processing increases the output of phosphoric acid processing.

Herein, referring to FIGS. 1 and 2, the substrate processing method of this embodiment will be described. FIG. 2 is a flowchart showing a substrate processing method performed by the substrate processing system 100 of this embodiment. In the substrate processing method of this embodiment, the substrate W is processed with the phosphoric acid solution L.

In step S1, the substrate W is monolithically processed with phosphoric acid solution L1. The single wafer processing apparatus 200 processes the substrate W with the phosphoric acid solution L1. In the wafer processing apparatus 200, the substrate holding section 210 rotates while holding the substrate W, and the phosphoric acid liquid supply section 220 supplies the phosphoric acid liquid L1 to the substrate W. The monolithic processing continues until a part of the predetermined etching amount in the silicon nitride layer of the substrate W is etched. After that, the etching is temporarily interrupted, and the substrate W is taken out from the substrate holding portion 210 of the wafer processing apparatus 200 and moved to the batch processing apparatus 300.

In step S2, the substrate W is batch processed with phosphoric acid solution L2. The batch processing apparatus 300 processes the substrate W with the phosphoric acid solution L2. In the batch processing apparatus 300, the substrate W is immersed in the processing tank 310. The batch process continues until the etching of the predetermined etching amount in the silicon nitride layer of the substrate W is completed.

Furthermore, the processing time for processing the substrate W with the phosphoric acid solution L2 in the batch processing device 300 is preferably longer than the processing time for the substrate W with the phosphoric acid solution L1 in the single-wafer processing device 200. In addition, the thickness of the silicon nitride layer of the substrate W to be etched in the batch processing apparatus 300 is preferably greater than the thickness of the silicon nitride layer of the substrate W to be etched in the monolithic processing apparatus 200.

In addition, it is preferable not to process the substrate W with another chemical solution between the single-chip processing by the phosphoric acid solution L1 in step S1 and the batch processing by the phosphoric acid solution L2 in step S2. Thereby, as the etching treatment of the silicon nitride layer, the etching treatment by the phosphoric acid solution L2 can be restarted after the etching treatment by the phosphoric acid solution L1. Furthermore, when the etching is interrupted, it can also be between the single-chip processing by the phosphoric acid solution L1 in step S1 and the batch processing by the phosphoric acid solution L2 in step S2 on the substrate W Perform rinsing treatment and/or drying treatment by rinsing liquid.

As described above, the substrate W is subjected to phosphoric acid treatment. By phosphoric acid treatment, the silicon nitride layer of the substrate W is etched. Typically, in the silicon nitride layer and the silicon oxide layer of the substrate W, the silicon nitride layer is selectively etched.

The substrate processing system 100 of this embodiment is suitable for use when etching a silicon nitride layer from a substrate W having a fine multilayer structure. For example, the substrate W is a memory used in a NAND structure. As an example, the substrate W is suitable for use in a three-dimensional structure NAND memory.

Next, referring to Figs. 1 to 3, the substrate processing method of this embodiment will be schematically described. 3(a) and 3(b) are schematic diagrams of the substrate W before being processed by the substrate processing method of this embodiment. Fig. 3(a) is a schematic enlarged cross-sectional view of the substrate W cut along the XZ section, and Fig. 3(b) is a schematic enlarged cross-sectional view of the substrate W of Fig. 3(a) cut along the line IIIB-IIIB.

As shown in FIGS. 3(a) and 3(b), the substrate W has a base material S and a multilayer structure M. The build-up structure M is a three-dimensional build-up structure in which a plurality of build-up layers including silicon nitride layers face each other through a gap D. Here, the substrate W is arranged to expand on the XY plane. The substrate S is a thin film extending on the XY plane. The laminated structure M is arranged on the upper surface of the base S. The laminated structure M extends from the upper surface of the base S in the Z direction. A gap D is formed in the multilayer structure M. Here, the gap D reaches the substrate S, and a part of the substrate S is exposed.

The multilayer structure M has a plurality of silicon oxide layers Ma and a plurality of silicon nitride layers Ea. The silicon oxide layer Ma and the silicon nitride layer Ea are alternately laminated. Each of the plurality of silicon oxide layers Ma and silicon nitride layers Ea extends parallel to the upper surface of the substrate S.

Pillars Mb are embedded in the multilayer structure M. The pillar Mb is formed of a material that is not etched by the phosphoric acid solution L. For example, the pillar Mb is formed of a silicon oxide layer or a metal film.

The substrate W is subjected to phosphoric acid treatment in the substrate processing system 100. By phosphoric acid treatment, the silicon nitride layer Ea of the substrate W is etched.

FIG. 3(c) is a schematic enlarged cross-sectional view of the substrate W processed by the substrate processing method of the present embodiment cut along the XZ section. As shown in FIG. 3(c), the silicon nitride layer Ea is removed from the build-up structure M by phosphoric acid treatment, and the silicon oxide layer Ma and the pillars Mb that have not been etched by the phosphoric acid solution L remain in the build-up structure M. A plurality of pillars Mb are provided between two adjacent silicon oxide layers Ma. The two adjacent silicon oxide layers Ma are supported by pillars Mb. As described above, the silicon nitride layer Ea is etched from the substrate W by phosphoric acid treatment.

Next, the phosphoric acid treatment of the substrate W performed by the substrate processing system 100 of this embodiment will be described with reference to FIGS. 1 to 4. 4(a) to 4(e) are schematic enlarged cross-sectional views of the upper surface of the substrate S of the substrate W being cut perpendicularly.

As shown in FIG. 4(a), the substrate W has a base material S and a multilayer structure M. The multilayer structure M has a plurality of silicon oxide layers Ma, a plurality of silicon nitride layers Ea, and pillars Mb. The substrate W is installed in the wafer processing apparatus 200. In the single wafer processing apparatus 200, the substrate W is arranged such that the normal direction of the upper surface of the substrate S is parallel to the Z direction.

As shown in FIG. 4(b), when the substrate W is subjected to phosphoric acid treatment, a part of the silicon nitride layer Ea is removed.

As shown in FIG. 4(c), when the phosphoric acid treatment of the substrate W continues, a part of the silicon nitride layer Ea is removed. After that, the substrate W is carried out from the wafer processing apparatus 200 and carried in to the batch processing apparatus 300.

As shown in FIG. 4(d), in the batch processing apparatus 300, the substrate W is arranged such that the normal direction of the upper surface of the substrate S is parallel to the X direction. When the substrate W is subjected to phosphoric acid treatment in the batch processing apparatus 300, a part of the silicon nitride layer Ea is removed.

As shown in FIG. 4(e), when the substrate W is further subjected to phosphoric acid treatment in the batch processing apparatus 300, a predetermined amount of silicon nitride layer Ea is etched from the substrate W.

As described above, in the substrate processing method of this embodiment, the substrate W can be subjected to phosphoric acid treatment to remove the silicon nitride layer Ea from the substrate W. In the substrate processing method of this embodiment, when the area of the interface between the phosphoric acid solution and the silicon nitride layer Ea is relatively wide, the substrate W is processed in a single piece. In this case, the silicon concentration in the phosphoric acid solution for processing the substrate W can be prevented from exceeding the saturated concentration, and the precipitation of silicon-containing substances from the phosphoric acid solution can be suppressed. Conversely, when the area of the interface between the phosphoric acid solution and the silicon nitride layer Ea is relatively narrow, the substrate W is batch processed with the phosphoric acid solution. In this case, since the concentration of silicon in the phosphoric acid solution for processing the substrate W does not exceed the saturation concentration, the yield of phosphoric acid treatment can be improved. Thereby, the substrate processing time can be shortened and the defects of the substrate processing can be suppressed.

On the other hand, in the case where the silicon nitride layer of the substrate W is etched only by single-chip processing, although defects are not likely to occur, the yield of substrate processing becomes low. In addition, when the silicon nitride layer of the substrate W is etched only by batch processing, although the yield of substrate processing can be increased, because more silicon nitride layers are dissolved in the phosphoric acid solution, there are some A situation where the concentration of silicon in the phosphoric acid solution increases locally. In particular, when the diameter of the gap D of the substrate W is small, the phosphoric acid solution in the gap D is difficult to circulate, so the silicon concentration in the phosphoric acid solution tends to increase. In this case, when the silicon concentration in the phosphoric acid solution exceeds the saturation concentration, there is a case that once the dissolved dissolved matter is precipitated from the phosphoric acid solution.

FIG. 5 is a schematic diagram of the substrate W deposited from the dissolved substance P in the phosphoric acid solution. In FIG. 5, the dissolved substance P once dissolved in the phosphoric acid solution precipitates in the multilayer structure M. For example, after the silicon nitride layer near the substrate S is dissolved in the phosphoric acid solution, when the phosphoric acid solution passes through the gap D of the multilayer structure from the surface of the substrate S, when the silicon concentration of the phosphoric acid solution rises and exceeds the saturation concentration, there is The case where the dissolved matter P precipitates from the phosphoric acid solution to the layered structure M.

In contrast, in the substrate processing system 100 of the present embodiment, when the area of the silicon nitride layer in contact with the phosphoric acid solution is relatively wide, the phosphoric acid treatment can be suppressed by the monolithic processing device 200 When the concentration of silicon in the phosphoric acid solution increases, the precipitation of dissolved substances can be suppressed. On the other hand, when the area of the silicon nitride layer in contact with the phosphoric acid solution is relatively narrow, the batch processing device 300 is used to process the silicon nitride layer, which can quickly etch the silicon nitride layer with the phosphoric acid solution and improve The output of phosphoric acid treatment.

Next, referring to FIG. 6, the results of the phosphoric acid treatment performed by the batch treatment device and the results of the phosphoric acid treatment performed by the single-chip treatment device are compared and explained. 6(a) is a schematic diagram of the batch processing apparatus 700, and FIG. 6(b) is a schematic diagram showing the flow F1 of the phosphoric acid solution on the substrate W during substrate processing by the batch processing apparatus 700, and FIG. 6( c) is a schematic diagram of the substrate W being processed in the batch processing apparatus 700. Here, the batch processing apparatus 700 processes the substrate W using a phosphoric acid solution that dissolves silicon at a high concentration.

As shown in FIG. 6(a), the batch processing apparatus 700 has a processing tank 710, a circulation path 720, a pump 730, and a filter 740. A phosphoric acid solution that dissolves silicon at a high concentration is stored in the processing tank 710. The circulation path 720 connects a part of the treatment tank 710 with another part of the treatment tank 710 outside the treatment tank 710. The pump 730 and the filter 740 are provided in the circulation path 720. The phosphoric acid solution in the treatment tank 710 is circulated through the circulation path 720 by the pump 730. The filter 740 removes particles in the circulation path 720. For example, the filter 740 removes silicon-containing substances in the phosphoric acid solution.

As shown in FIG. 6(b), in the case of batch processing, the phosphoric acid solution flows in the gap D of the substrate W along with the flow F1. For example, in the batch processing apparatus 700, when an upward flow is formed in the phosphoric acid liquid in the processing tank 710, the phosphoric acid liquid flows in the direction of the arrow U. Therefore, the phosphoric acid solution in the gap D of the substrate W flows along with the flow F1. However, since the flow of the upflow is not so strong, a certain degree of phosphoric acid liquid remains in the gap D, which increases the silicon concentration in the phosphoric acid liquid.

Therefore, as shown in FIG. 6(c), when the batch-processed substrate W is observed with a microscope, it is confirmed that there are many silicon-containing substances on the substrate W.

Fig. 6(d) is a schematic diagram of the single-chip processing apparatus 800, and Fig. 6(e) is a schematic diagram showing the flow F2 of phosphoric acid solution to the substrate W during substrate processing by the single-chip processing apparatus 800, Fig. 6( f) is a schematic diagram of the substrate W being processed in the single-chip processing apparatus 800. Here, the wafer processing apparatus 800 processes the substrate W using a phosphoric acid solution that dissolves silicon at a high concentration.

As shown in FIG. 6(d), the single wafer processing apparatus 800 has a phosphoric acid solution supply part 820. In the wafer processing apparatus 800, the phosphoric acid liquid supply part 820 supplies the phosphoric acid liquid to the substrate W rotating at a high speed. The substrate W is subjected to phosphoric acid treatment by the phosphoric acid solution supplied to the substrate W. As the substrate W rotates, the phosphoric acid solution supplied to the substrate W flows toward the outside on the upper surface of the substrate W by centrifugal force.

As shown in FIG. 6(e), when the phosphoric acid treatment is performed, the phosphoric acid solution flows in the gap D of the substrate W along with the flow F2. For example, in the wafer processing apparatus 800, when the phosphoric acid solution is supplied while rotating the substrate W, the phosphoric acid solution flows in the direction of the arrow R. Therefore, the phosphoric acid solution in the gap D of the substrate W flows along with the flow F2. In the single-chip processing, since the substrate W is rotated at a high speed, the phosphoric acid solution in the gap D is quickly replaced, and the increase of the silicon concentration in the phosphoric acid solution can be suppressed.

Therefore, as shown in FIG. 6(f), when the single-piece processed substrate W is observed under a microscope, the silicon-containing material observed on the substrate W is very small.

From the comparison of Fig. 6(b) and Fig. 6(e), it can be understood that the flow of phosphoric acid solution in batch processing is relatively slow, while the flow of phosphoric acid solution in single-chip processing is relatively fast. Even if an upward flow is formed in the phosphoric acid solution in batch processing, it is still inferior to the flow of phosphoric acid solution caused by rotation in the monolithic processing. Therefore, in the single-chip processing, the phosphoric acid solution in which silicon is dissolved quickly flows from the gap D to the outside, and the phosphoric acid solution in the single-chip processing has a low silicon concentration. On the other hand, in the batch process, since the phosphoric acid solution in which silicon is dissolved tends to stay in the gap D, the silicon concentration of the phosphoric acid solution in the batch process becomes higher.

Therefore, from the comparison of Fig. 6(c) and Fig. 6(f), it can be understood that the amount of silicon-containing substances deposited on the substrate W in the batch process increases. On the other hand, in the single-chip process, The amount of silicon-containing substances on the substrate W is reduced.

As described above, in the single wafer processing, the phosphoric acid liquid L in the gap D of the substrate W is easily replaced due to the rapid flow of the phosphoric acid liquid. Therefore, even if the silicon concentration in the phosphoric acid liquid L in the gap D becomes locally high, the phosphoric acid liquid L still flows from the gap D of the substrate W to the outside, and therefore it is difficult for the silicon-containing material to precipitate to the substrate W. On the other hand, in batch processing, since the flow of the phosphoric acid solution is relatively slow, it is difficult to replace the phosphoric acid solution in the gap D of the substrate W. Therefore, when the silicon concentration in the phosphoric acid liquid L in the gap D becomes locally high, it is difficult for the phosphoric acid liquid L to flow from the gap D of the substrate W to the outside. Therefore, there is a possibility that silicon-containing substances may precipitate on the substrate W.

Furthermore, in the substrate processing system 100, when the single-chip processing apparatus 200 and the batch processing apparatus 300 perform phosphoric acid treatment on the substrate W, the number of substrates processed per unit time by the single-chip processing apparatus 200 is smaller than Preferably, it is approximately equal to the number of substrates processed by the batch processing apparatus 300 per unit time. In this case, the batch processing apparatus 300 can sequentially process the substrates W processed in the single-chip processing apparatus 200, so the idle time of any one of the single-chip processing apparatus 200 and the batch processing apparatus 300 can be reduced. In addition, in this specification, there are cases where the number of substrates processed per unit time is described as "processing capacity".

For example, in the substrate processing system 100, there are four single-chip processing units of the single-chip processing device 200 relative to one batch processing device 300. The processing time is preferably 1/4 times the batch processing time. For example, relative to the single chip processing time of 10 minutes, the batch processing time is preferably 40 minutes.

In this case, in the substrate processing system 100, since each of the four single-chip processing sections performs processing in 10 minutes, the processing capacity of the single-chip processing apparatus 200 is 24 WPH (=4×60/10). In addition, when the batch processing device 300 processes 16 substrates in 40 minutes, the processing capacity of the batch processing device 300 is 24 WPH (=16×60/40). Therefore, by continuously repeating the single-chip processing and batch processing by the single-chip processing device 200 and the batch processing device 300, the idle time of both can be reduced.

Furthermore, in the substrate processing system 100, it is preferable to set it to match the single-chip processing time, the number of single-chip processing units, and the number of substrates W processed by the batch processing device 300, so that the batch processing device The processing capacity of 300 becomes approximately equal to that of the single-chip processing device 200.

For example, when the time required to etch a predetermined amount of silicon nitride layer is 1 hour, and the time in which there is a possibility of precipitation of silicon-containing substances is 15 minutes, the single-chip processing time is set to 15 minutes, and the batch The processing time is set to 45 minutes. In this case, when the number of substrates W that can be loaded on the batch processing device 300 is set to 30, if the single chip processing device 200 has 10 single chip processing units, the processing capacity of the batch processing device 300 It becomes approximately equal to the processing capacity of the single-chip processing device 200. At this time, the processing capacity of the single-chip processing apparatus 200 is 40 WPH, the processing capacity of the batch processing apparatus 300 is 40 WPH, and the overall processing capacity of the substrate processing system 100 is 40 WPH.

Furthermore, when the time required to etch the silicon nitride layer is 1 hour, when only the batch processing device is used for phosphoric acid treatment, since the number of substrates W that can be loaded on the batch processing device is 30, The processing capacity is 30WPH. On the other hand, when phosphoric acid treatment is performed only with a single-chip processing device having 10 single-chip processing sections, the processing capacity is 10 WPH. In contrast, in the substrate processing system 100 of the present embodiment, by appropriately adjusting the single-chip processing time, batch processing time, and the number of single-chip processing sections of the single-chip processing apparatus 200, it is possible to realize and separate batch processing. The processing device has the same processing capacity as the batch processing.

Furthermore, in the above description of the processing capacity, in order to avoid overcomplicating the description, the single-chip processing time is set equal to the phosphoric acid processing time, and the batch processing time is set equal to the phosphoric acid processing time, but the actual Above, even when the single-chip processing apparatus 200 only performs phosphoric acid treatment, there are cases where the single-chip processing time becomes longer than the phosphoric acid treatment time. In addition, even when the batch processing apparatus 300 only performs phosphoric acid processing, there are cases where the batch processing time becomes longer than the phosphoric acid processing time. In particular, from the viewpoint of heat resistance, the single wafer processing apparatus 200 may not be able to continuously supply the high-temperature phosphoric acid liquid L1 for a long period of time and may intermittently supply the phosphoric acid liquid L1. In this case, the processing time for a single chip becomes longer than the phosphoric acid processing time. In addition, even in the batch processing apparatus 300, for the preparation and post-processing of phosphoric acid treatment, the batch processing time becomes longer than the phosphoric acid processing time. Therefore, the single-chip processing device and batch processing time are preferably set based on the phosphoric acid processing time of the single-chip processing device 200 and the batch processing device 300.

Furthermore, referring to FIG. 1 and in the above description, the single-chip processing apparatus 200 supplies the phosphoric acid liquid L1 to the substrate W, but the single-chip processing apparatus 200 may also supply other liquids to the substrate W.

Next, referring to FIG. 7, the single-chip processing apparatus 200 in the substrate processing system 100 of this embodiment will be described. FIG. 7 is a schematic diagram of the single chip processing device 200. Furthermore, the single wafer processing apparatus 200 shown in FIG. 7 has the structure of the substrate holding portion 210 and the phosphoric acid solution supply portion 220, and further includes the rinse solution supply portion 230 and the cup 270. The wafer processing apparatus 200 in the substrate processing system 100 has the same configuration. Therefore, in order to avoid redundant content, repeated descriptions are omitted.

In addition to the chamber 202, the substrate holding portion 210, and the phosphoric acid solution supply portion 220, the single chip processing apparatus 200 further includes a rinse solution supply portion 230. A substrate holding portion 210, a phosphoric acid solution supply portion 220, and a rinse solution supply portion 230 are housed in the chamber 202.

The phosphoric acid liquid supply unit 220 supplies the phosphoric acid liquid L1 to the substrate W. The substrate W is subjected to phosphoric acid treatment by supplying the phosphoric acid liquid L1 to the substrate W.

The rinse liquid supply part 230 supplies the rinse liquid Lr to the substrate W. The substrate W is rinsed by supplying the rinse liquid Lr to the substrate W. The rinse liquid Lr is, for example, pure water (Deionzied Water). Furthermore, the rinsing liquid Lr is not limited to pure water, but can also be carbonated water, electrolyzed ionized water, hydrogen water, ozone water, IPA (isopropyl alcohol), and hydrochloric acid water with a dilution concentration (for example, about 10~100ppm) Any of them.

In addition, as shown in FIG. 7, the single-chip processing apparatus 200 preferably further includes a cup 270. At least one of the phosphoric acid liquid L1 and the rinse liquid Lr supplied to the substrate W can be recovered by the cup 270.

As described above, the substrate holding portion 210 may also be of a vacuum type. The substrate holding portion 210 includes a rotating base 211, a plurality of chuck pins 212, a rotating shaft 213, and a rotating motor 214. Here, the rotating base 211 has a disc shape. The rotating base 211 is held in a horizontal posture. Each of the plurality of chuck pins 212 is above the rotating base 211 to hold the substrate W in a horizontal posture. The rotating shaft 213 extends downward from the central part of the rotating base 211. The rotation motor 214 rotates the rotation shaft 213 in the rotation direction Dr to rotate the substrate W and the rotation base 211 around the rotation axis AX1.

As shown in FIG. 7, the phosphoric acid liquid supply unit 220 includes a phosphoric acid liquid nozzle 221, a phosphoric acid liquid pipe 222, a phosphoric acid liquid valve 223, and a phosphoric acid liquid temperature adjustment device 224. The phosphoric acid liquid nozzle 221 discharges the phosphoric acid liquid L1 toward the substrate W held by the substrate holding portion 210. The phosphoric acid liquid pipe 222 supplies the phosphoric acid liquid L1 to the phosphoric acid liquid nozzle 221. The phosphoric acid liquid valve 223 switches the supply of the phosphoric acid liquid L1 from the phosphoric acid liquid pipe 222 to the phosphoric acid liquid nozzle 221 and the stop of the supply. The phosphoric acid liquid temperature adjustment device 224 raises the temperature of the phosphoric acid liquid L1 supplied to the phosphoric acid liquid nozzle 221 to a temperature higher than room temperature.

When the phosphoric acid liquid valve 223 is opened, the phosphoric acid liquid L1 whose temperature has been adjusted by the phosphoric acid liquid temperature adjusting device 224 is supplied to the phosphoric acid liquid nozzle 221 from the phosphoric acid liquid pipe 222 and discharged from the phosphoric acid liquid nozzle 221. The phosphoric acid liquid temperature adjustment device 224 maintains the temperature of the phosphoric acid liquid L1 at a fixed temperature in the range of 80 to 215°C, for example. The temperature of the phosphoric acid liquid L1 adjusted by the phosphoric acid liquid temperature adjusting device 224 may be the boiling point of the concentration, or may be a temperature below the boiling point. For example, the phosphoric acid solution is an aqueous solution containing phosphoric acid as the main component. The concentration of phosphoric acid in the phosphoric acid solution L1 is, for example, in the range of 50% to 100%, preferably around 80%.

The phosphoric acid liquid supply unit 220 includes a nozzle arm 225 and a phosphoric acid liquid nozzle moving unit 226. The phosphoric acid liquid nozzle 221 is installed at the front end of the nozzle arm 225. The phosphoric acid liquid nozzle moving unit 226 rotates the nozzle arm 225 around the substrate holding unit 210 around the rotation axis AX2 extending in the vertical direction, and moves the nozzle arm 225 in the vertical direction along the rotation axis AX2. Thereby, the phosphoric acid liquid nozzle moving part 226 moves the phosphoric acid liquid nozzle 221 in the horizontal direction and/or the vertical direction. In addition, the phosphoric acid liquid nozzle moving unit 226 causes the phosphoric acid liquid nozzle 221 to be supplied to the processing position of the upper surface of the substrate W with the phosphoric acid liquid L1 discharged from the phosphoric acid liquid nozzle 221, and the phosphoric acid liquid nozzle 221 is retracted to the periphery of the substrate W in a plan view. Move in the horizontal direction between the retracted positions.

The rinse liquid supply part 230 includes a rinse liquid nozzle 231, a rinse liquid pipe 232, and a rinse liquid valve 233. The rinse liquid nozzle 231 discharges the rinse liquid Lr toward the substrate W held by the substrate holding portion 210. The rinse liquid nozzle 231 is a fixed nozzle that discharges the rinse liquid Lr in a state where the discharge port of the rinse liquid nozzle 231 is stationary. The rinse liquid pipe 232 supplies the rinse liquid Lr to the rinse liquid nozzle 231. The rinse liquid valve 233 switches the supply of the rinse liquid Lr from the rinse liquid pipe 232 to the rinse liquid nozzle 231 and the stop of the supply.

When the rinse liquid valve 233 is opened, the rinse liquid Lr supplied from the rinse liquid pipe 232 to the rinse liquid nozzle 231 is discharged from the rinse liquid nozzle 231 toward the center of the upper surface of the substrate W. Furthermore, the rinse liquid supply part 230 may be provided with a rinse liquid nozzle moving part. The rinse liquid nozzle moving unit moves the rinse liquid nozzle 231 to move the discharge position of the rinse liquid Lr on the upper surface of the substrate W.

As shown in FIG. 7, the cup 270 is arranged outside the substrate W held by the substrate holding portion 210 (the direction away from the rotation axis AX1). The cup 270 has a substantially cylindrical shape. The cup 270 surrounds the rotating base 211. The cup 270 receives the processing liquid discharged from the substrate W.

When the processing liquid is supplied to the substrate W in a state where the substrate holding portion 210 rotates the substrate W, the processing liquid supplied to the substrate W is thrown away to the periphery of the substrate W. When the processing liquid is supplied to the substrate W, the cup 270 opened upward is arranged above the spin base 211. Therefore, processing liquids such as phosphoric acid liquid L1, chemical liquid, and rinse liquid discharged around the substrate W are received by the cup 270. Next, the processing liquid (waste liquid) received by the cup 270 is sent to a recovery device or a waste liquid device not shown.

As explained with reference to FIG. 7, the wafer processing apparatus 200 can supply the rinse liquid Lr to the substrate W. In addition, in the above description with reference to FIGS. 1 and 2, after the substrate W is monolithically processed with the phosphoric acid solution L1, the substrate W is continuously processed in batches with the phosphoric acid solution L2. However, this embodiment does not Not limited to this. The substrate W may also be rinsed between the single-chip processing by the phosphoric acid solution L1 and the batch processing by the phosphoric acid solution L2.

Here, the substrate processing method of this embodiment will be described with reference to FIG. 1, FIG. 7, and FIG. 8. FIG. FIG. 8 is a flowchart for explaining the substrate processing method of this embodiment. In the substrate processing method of this embodiment, single-chip processing is performed in step S1, and then batch processing is performed in step S2.

In step S1a, the substrate W is carried into the single chip processing apparatus 200. The substrate W is held by the substrate holding portion 210.

In step S1b, the substrate W is subjected to phosphoric acid treatment. The substrate W is rotated while the substrate holding section 210 holds the substrate W, and at the same time, the phosphoric acid liquid supply section 220 supplies the phosphoric acid liquid L1 to the substrate W.

In step S1c, the substrate W is rinsed. In a state where the substrate holding unit 210 rotates the substrate W, the rinse liquid supply unit 230 supplies the rinse liquid Lr to the substrate W.

In step S1d, the substrate W is dried. The phosphoric acid liquid supply unit 220 and the rinse liquid supply unit 230 do not supply the phosphoric acid liquid L1 and the rinse liquid Lr, and the substrate holding unit 210 rotates the substrate W while holding the substrate W. The substrate W is dried by the rotation of the substrate W.

In step S2a, the substrate W is carried into the batch processing apparatus 300. For example, the substrate W is carried out from the single chip processing apparatus 200 and carried into the batch processing apparatus 300. In the batch processing apparatus 300, the substrate W is stacked on the loading part 320. A plurality of substrates W are stored in the stowage part 320.

In step S2b, the substrate W is immersed in the processing tank 310. The phosphoric acid solution L2 is stored in the processing tank 310, and the substrate W is processed with the phosphoric acid solution L2. The substrate processing method of this embodiment is performed as described above.

Furthermore, the single wafer processing apparatus 200 described above with reference to FIG. 7 can supply the phosphoric acid solution and the rinse solution to the substrate W, but this embodiment is not limited to this. The single-chip processing apparatus 200 may further supply other liquid to the substrate W.

Here, the single-chip processing apparatus 200 in the substrate processing system 100 of this embodiment will be described with reference to FIG. 9. FIG. 9 is a schematic diagram of the single chip processing device 200. Furthermore, the single wafer processing apparatus 200 shown in FIG. 9 has the same configuration as the above-mentioned wafer processing apparatus 200 with reference to FIG. 7 except that it is further provided with a chemical liquid supply unit 240 and an etching liquid supply unit 250. Therefore, in order to avoid redundant content, repeated descriptions are omitted.

In addition to the chamber 202, the substrate holding portion 210, the phosphoric acid solution supply portion 220, and the rinse solution supply portion 230, the single chip processing apparatus 200 further includes a chemical solution supply portion 240 and an etching solution supply portion 250. The chemical liquid supply part 240 and the etching liquid supply part 250 are housed in the chamber 202.

The chemical liquid supply unit 240 supplies the chemical liquid Lc to the substrate W. By supplying the chemical liquid Lc to the substrate W, the chemical liquid treatment is performed on the substrate W. The liquid medicine Lc contains ammonia. For example, the chemical liquid Lc includes a mixed liquid of ammonia and hydrogen peroxide (a mixed liquid of NH ₄ OH and H ₂ O ₂ : SC1). Or, the liquid medicine Lc may also be a liquid containing ammonium hydroxide (NH ₄ OH).

The substrate W is etched by the chemical liquid Lc containing ammonia. In particular, the silicon oxide layer of the substrate W is etched by the chemical liquid Lc. In addition, the substrate W is processed with the chemical liquid Lc containing ammonia, thereby forming a protective film on the processed substrate W. The protective film can suppress the deterioration of the characteristics of the substrate W.

Furthermore, the protective film may be removed after the protective film is formed on the surface of the substrate W by the chemical treatment. However, the interval between the removal of the protective film and the start of the next processing of the substrate W is preferably short. For example, the interval after the protective film is removed to the start of the next processing of the substrate W is preferably within 48 hours, and more preferably within 24 hours. In addition, when it takes time after the protective film is removed to start the next process, it is preferable that the protective film is not removed and the protective film is formed on the surface of the substrate W until the next process is started. With the protective film, the generation of impurities caused by residual phosphorus can be suppressed.

The temperature of the liquid medicine Lc is preferably higher than room temperature. For example, the temperature of the chemical liquid Lc is preferably 60°C or more and 80°C or less. When the temperature of the liquid medicine Lc is higher than room temperature, the processing time of liquid medicine can be shortened. However, the temperature of the liquid medicine Lc can also be room temperature, or the temperature of the liquid medicine Lc can also be lower than room temperature.

The liquid medicine supply unit 240 includes a liquid medicine nozzle 241, a liquid medicine pipe 242, a liquid medicine valve 243, and a liquid medicine nozzle moving unit 244. The chemical liquid nozzle 241 discharges the chemical liquid Lc toward the substrate W held by the substrate holding portion 210. The liquid medicine Lc contains SC1. The chemical liquid pipe 242 supplies the chemical liquid Lc to the chemical liquid nozzle 241. The liquid medicine valve 243 switches the supply and stop of the liquid medicine Lc from the liquid medicine pipe 242 to the liquid medicine nozzle 241. When the liquid medicine valve 243 is opened, the liquid medicine Lc is supplied from the liquid medicine pipe 242 to the liquid medicine nozzle 241 and discharged from the liquid medicine nozzle 241.

The liquid chemical nozzle moving part 244 moves the liquid chemical nozzle 241 in the horizontal direction and/or the vertical direction. The liquid chemical nozzle moving unit 244 causes the liquid chemical nozzle 241 to be supplied to the processing position on the upper surface of the substrate W when the liquid Lc discharged from the liquid chemical nozzle 241 is supplied to the processing position, and the liquid chemical nozzle 241 is retracted to the periphery of the substrate W in a plan view. Move in the horizontal direction between positions.

The etching liquid supply part 250 supplies the etching liquid Le to the substrate W. The etching solution Le is used for etching the substrate W, for example.

As described above, the chemical liquid Lc is a liquid containing ammonia, and the substrate W is etched by the supply of the chemical liquid Lc. However, the etching liquid Le and the chemical liquid Lc are not the same. The etching rate of the substrate W by the etching solution Le is different from the etching rate of the substrate W by the chemical solution Lc. For example, it is preferable that the etching rate of the substrate W by the etching solution Le is greater than the etching rate of the substrate W by the chemical solution Lc. Thereby, the etching time of the substrate W can be shortened.

In addition, the composition of the etching solution Le may be different from the composition of the chemical solution Lc. For example, hydrofluoric acid may also be used as the etching liquid Le. Since the etching rate of hydrofluoric acid is higher than that of the liquid containing ammonia, the etching time of the substrate W can be shortened.

The etching liquid supply part 250 includes an etching liquid nozzle 251, an etching liquid pipe 252, an etching liquid valve 253, and an etching liquid nozzle moving part 254. The etching liquid nozzle 251 discharges the etching liquid Le toward the substrate W held by the substrate holding portion 210. The etching liquid pipe 252 supplies the etching liquid Le to the etching liquid nozzle 251. The etching liquid valve 253 switches the supply of the etching liquid Le from the etching liquid pipe 252 to the etching liquid nozzle 251 and the stopping of the supply. When the etching liquid valve 253 is opened, the etching liquid Le is supplied from the etching liquid pipe 252 to the etching liquid nozzle 251 and is discharged from the etching liquid nozzle 251.

The etching liquid nozzle moving part 254 moves the etching liquid nozzle 251 in the horizontal direction and/or the vertical direction. The etching liquid nozzle moving part 254 moves the etching liquid nozzle 251 in the horizontal direction between the processing position and the retreat position. When the etching liquid nozzle 251 moves to the processing position, the etching liquid Le discharged from the etching liquid nozzle 251 is supplied to the upper surface of the substrate W. When the etching liquid nozzle 251 moves to the retreat position, the etching liquid nozzle 251 retreats to the periphery of the substrate W in a plan view.

Here, the substrate processing method of this embodiment will be described with reference to FIGS. 1, 9 and 10. FIG. 10 is a flowchart for explaining the substrate processing method of this embodiment.

In step S1a, the substrate W is carried into the single chip processing apparatus 200. The substrate W is held by the substrate holding portion 210.

In step S1b, the substrate W is subjected to phosphoric acid treatment. The substrate holding portion 210 rotates the substrate W while holding the substrate W. The phosphoric acid liquid supply unit 220 supplies the phosphoric acid liquid L1 to the substrate W.

In step S1c, the substrate W is rinsed. The substrate holding unit 210 rotates the substrate W, and the rinse liquid supply unit 230 supplies the rinse liquid Lr to the substrate W.

In step S1d, the substrate W is dried. The phosphoric acid solution L1 and the rinse solution Lr are not supplied to the substrate W, and the substrate holding portion 210 rotates the substrate W while holding the substrate W. The substrate W is dried by the rotation of the substrate W.

In step S2a, the substrate W is carried into the batch processing apparatus 300. The substrate W is carried out from the wafer processing apparatus 200 and carried in to the batch processing apparatus 300. In the batch processing apparatus 300, the substrate W is stacked on the loading part 320. A plurality of substrates W are stored in the stowage part 320.

In step S2b, the substrate W is subjected to phosphoric acid treatment. The stowage 320 immerses the substrate W in the phosphoric acid liquid L2 of the processing tank 310.

In step S3a, the substrate W is carried into the single-chip processing apparatus 200. The substrate W is carried out from the batch processing apparatus 300 and carried into the single wafer processing apparatus 200. The substrate W is held by the substrate holding portion 210.

In step S3b, the substrate W is rinsed. The substrate holding portion 210 rotates the substrate W while holding the substrate W. The rinse liquid supply part 230 supplies the rinse liquid Lr to the substrate W. The phosphoric acid on the surface of the substrate W can be removed by the rinse liquid Lr.

In step S3c, the substrate W is etched. In a state where the substrate holding unit 210 rotates the substrate W, the etching liquid supply unit 250 supplies the etching liquid Le to the substrate W. The substrate W is efficiently etched by the etching liquid Le.

In step S3d, the substrate W is treated with a chemical solution. In a state where the substrate holder 210 rotates the substrate W, the chemical liquid supply unit 240 supplies the chemical liquid Lc to the substrate W. The substrate W is etched by the chemical liquid Lc, and a protective film is formed on the surface of the substrate W.

In step S3e, the substrate W is rinsed. In a state where the substrate holding unit 210 rotates the substrate W, the rinse liquid supply unit 230 supplies the rinse liquid Lr to the substrate W.

In step S3f, the substrate W is dried. The phosphoric acid solution L1, the rinse solution Lr, the chemical solution Lc, and the etching solution Le are not supplied to the substrate W, and the substrate holding portion 210 rotates the substrate W while holding the substrate W. The substrate W is dried by the rotation of the substrate W.

In step S3g, the substrate W is carried out from the wafer processing apparatus 200. As described above, by the substrate processing method of this embodiment, the silicon nitride layer of the substrate W can be preferably etched.

Furthermore, in the description with reference to FIG. 10, the etching process is performed in step S3c between the rinse process of step S3b and the chemical solution process of step S3d, but the present embodiment is not limited to this. The etching process of step S3c can also be omitted.

The substrate processing system 100 stores a computer program of a predetermined program, and the substrate processing system 100 may control the single chip processing apparatus 200 and the batch processing apparatus 300 in a manner of operating according to the determined program. Alternatively, in the substrate processing system 100, the single-chip processing apparatus 200 and the batch processing apparatus 300 are controlled based on the measurement result. For example, it is also possible to control the single chip processing apparatus 200 and the batch processing apparatus 300 based on the measurement result of the phosphoric acid liquid L.

For example, it is also possible to measure the silicon concentration of the phosphoric acid solution L1, and control the single chip processing device 200 and the batch processing device 300 based on the measurement result of the silicon concentration. For example, the silicon concentration of the phosphoric acid solution L1 flowing out from the substrate W can also be measured. Alternatively, the silicon concentration of the phosphoric acid solution L1 remaining on the substrate W may be measured. In addition, in one example, the interruption step may be started based on the case where the measurement result becomes below the predetermined threshold value, and the substrate W may be moved from the single-chip processing apparatus 200 to the batch processing apparatus 300.

Or, it can also be that the time from the start of the first etching step to the start of the interrupt step is based on a query form that establishes the relationship between the etching process conditions of the first etching step and the time from the start of the first etching step to the start of the interrupt step (Look Up Table: LUT) and decided. It is also possible to change various etching treatment conditions such as phosphoric acid concentration, silicon concentration, and liquid temperature at the start of the treatment of the phosphoric acid solution L1 in the first etching step, and experimentally determine the optimum for each etching treatment condition The time from the start of the first etching step to the start of the interrupt step. It is also possible to store in the memory unit 520 the LUT representing the correspondence between the plurality of times from the start of the first etching step to the start of the interrupt step and the plurality of processing conditions of the first etching step obtained in this way (for example, FIG. 14) . In this case, the above-mentioned correspondence stored as the LUT is read from the memory unit 520, and the time from the start of the first etching step to the start of the interruption step is determined based on this, so that it can be compared with the first etching step Start the interruption step at the optimal time point corresponding to the processing conditions.

Next, the substrate processing system 100 of this embodiment will be described with reference to FIG. 11. FIG. 11 is a schematic diagram of the substrate processing system 100 of this embodiment. The substrate processing system 100 shown in FIG. 11 has the same configuration as the substrate processing system 100 described above with reference to FIG. 1 except that the single chip processing apparatus 200 is further provided with a silicon concentration meter. Therefore, in order to avoid redundant content, repeated descriptions are omitted.

In the substrate processing system 100, the single chip processing apparatus 200 further includes a silicon concentration meter 280 and a pipe 282. The piping 282 is connected to the chamber 202 of the single chip processing part 200A-200D. The phosphoric acid liquid L1 after processing the substrate W in the single-piece processing units 200A to 200D flows through the pipe 282.

The silicon concentration meter 280 is connected to the pipe 282. The silicon concentration meter 280 measures the silicon concentration of the phosphoric acid solution after phosphoric acid treatment.

For example, the silicon concentration meter 280 measures the silicon concentration of the phosphoric acid solution after processing the substrate W with the phosphoric acid solution L1 in the chamber 202. In the case where the silicon concentration measured in the silicon concentration meter 280 is high, when the substrate W is directly subjected to batch processing, there is a possibility that silicon-containing substances may be deposited on the substrate W. On the other hand, when the silicon concentration measured in the silicon concentration meter 280 is low, even if the substrate W is treated with the phosphoric acid solution L2 in the batch processing apparatus 300, there is a possibility that silicon-containing substances may be deposited on the substrate W Still low.

Therefore, when the measured value of the silicon concentration meter 280 is lower than the threshold value, the phosphoric acid liquid supply part 220 interrupts the supply of the phosphoric acid liquid L1 to stop the processing by the single-chip processing apparatus 200, and the substrate W is transferred from the single wafer processing device 200 to the batch processing device 300, and phosphoric acid processing in the batch processing device 300 is started. Thereby, batch processing can be started quickly according to the processing conditions of the substrate W, and the phosphoric acid processing time can be shortened.

In addition, the silicon concentration meter 280 shown in FIG. 11 measures the silicon concentration of the phosphoric acid liquid L1 flowing out of the substrate W, but this embodiment is not limited to this. Alternatively, the silicon concentration meter measures the silicon concentration of the phosphoric acid solution L1 remaining on the substrate.

Furthermore, it is preferable that the substrate processing system 100 further includes a transfer unit that transfers the substrate W processed by the single-chip processing apparatus 200 to the batch processing apparatus 300.

Hereinafter, referring to FIG. 12, an embodiment of the substrate processing system 100 of the present invention will be described. FIG. 12 is a schematic diagram of the substrate processing system 100 of this embodiment. The substrate processing system 100 shown in FIG. 12 has the same structure as the substrate processing system 100 described above with reference to FIG. 1 except for the structure of the single wafer processing apparatus 200 and the stowage section 320, and further includes the transfer section 400. Therefore, in order to avoid redundant content, repeated descriptions are omitted.

The substrate processing system 100 further includes a transfer unit 400 in addition to the single wafer processing apparatus 200 and the batch processing apparatus 300. The transfer unit 400 transfers the substrate W from the wafer processing apparatus 200 to the batch processing apparatus 300. Furthermore, the transfer unit 400 may further transfer the substrate W from the batch processing apparatus 300 to the single wafer processing apparatus 200.

The chamber 202 is provided with an opening 202a, and the opening 202a is provided with a baffle 204 for opening and closing the opening 202a. In the state where the shutter 204 opens the opening 202a, the substrate W can move from the outside to the inside of the chamber 202, or from the inside to the outside. Therefore, the opening 202a of the chamber 202 functions as an entrance and exit of the substrate W.

The transfer unit 400 transfers the substrate W between the single wafer processing apparatus 200 and the batch processing apparatus 300. For example, the transfer unit 400 transfers the substrate W to the wafer processing apparatus 200. In addition, the transfer unit 400 carries out the substrate W from the wafer processing apparatus 200. Furthermore, the transfer unit 400 transfers the substrate W to the batch processing apparatus 300. In addition, the transfer unit 400 carries out the substrate W from the batch processing apparatus 300.

The transfer part 400 has an arm part 402, a rotating table 404, and an elevating part 406. The arm 402 can extend and contract in the X-axis direction. The arm 402 supports the substrate W from below. By the arm 402, the substrate W can be carried in to the single-chip processing apparatus 200, and the substrate W can be carried in from the single-chip processing apparatus 200. The arm 402 is installed on the upper surface of the rotating table 404.

The rotating table 404 can rotate around the Z axis. Through the rotation of the rotating table 404, the arm 402 can reach the single chip processing device 200 or the batch processing device 300.

The elevating part 406 raises and lowers the arm part 402 and the rotating table 404 in the Z-axis direction. With the lifting of the lifting portion 406, the arm portion 402 can reach the single-piece processing portion 200A that is configured to be higher.

The stowage part 320 has a grip part 322, a rotation part 324, and a support part 326. The holding portion 322 holds the substrate W. The holding portion 322 receives the substrate W from the arm portion 402 and holds the substrate W. A plurality of grooves are provided in the holding portion 322, and the substrate W is embedded in the plurality of grooves.

The rotating part 324 supports the grip part 322. The rotating part 324 rotates the grip part 322 around the rotating shaft along the Z-axis direction.

The supporting portion 326 supports the holding portion 322 and the rotating portion 324. The support portion 326 rotates the grip portion 322 and the rotation portion 324 by 180° around the rotation axis along the X-axis direction. Due to this rotation, the grip portion 322 rotates until the horizontal holding state of the substrate W is held horizontally through the vertical holding state of the substrate W being held vertically, and then the horizontal holding state is again returned. The substrate W is immersed in the processing tank 310 while being held by the holding portion 322. Furthermore, it is also possible that the supporting portion 326 can move parallel to the Y direction.

Furthermore, the substrate processing system 100 stores a computer program with a predetermined program, or in the substrate processing system 100, the single chip processing device 200 and the batch processing device 300 are controlled by operating in accordance with the determined program. , And the transfer unit 400. Alternatively, in the substrate processing system 100, the single-chip processing apparatus 200, the batch processing apparatus 300, and the transfer unit 400 are controlled based on the measurement result. For example, it is also possible to control the single-chip processing apparatus 200, the batch processing apparatus 300, and the transfer part 400 based on the measurement result of the phosphoric acid liquid L.

Hereinafter, referring to FIG. 13, an embodiment of the substrate processing system 100 of the present invention will be described. FIG. 13 is a schematic plan view of the substrate processing system 100 of this embodiment.

The substrate processing system 100 includes a plurality of load ports LP, an indexer robot IR, a single chip processing device 200, a batch processing device 300, and a transfer unit 400. The single chip processing apparatus 200 is arranged on one side along the X direction in the substrate processing system 100, and the batch processing apparatus 300 is arranged on the other side along the X direction.

The single chip processing apparatus 200 includes a plurality of single chip processing units. In FIG. 13, for the convenience of description, the single-chip processing sections are all labeled as the single-chip processing section 200A. In the substrate processing system 100, the tower TW is formed by stacking three single chip processing parts 200A, and four towers TW are provided.

Each of the load ports LP is stacked and accommodates a plurality of substrates W. The indexer robot IR transfers the substrate W between the load port LP and the transfer unit 400. The transfer unit 400 transfers the substrate W between the indexer robot IR and the single chip processing apparatus 200. In addition, the transfer unit 400 transfers the substrate W between the single wafer processing apparatus 200 and the batch processing apparatus 300.

In this substrate processing system 100, the single-chip processing apparatus 200 has 16 single-chip processing units 200A for one batch processing apparatus 300. When the batch processing apparatus 300 processes 64 substrates W at a time, the single-chip processing time is preferably 1/4 times the batch processing time. For example, for a single chip processing time of 10 minutes, the batch processing time is preferably 40 minutes.

Next, referring to FIGS. 7, 9, and FIGS. 12 to 14, the substrate processing system 100 of this embodiment will be described. FIG. 14 is a block diagram of the substrate processing system 100. The substrate processing system 100 further includes a control unit 500. The control unit 500 controls the single-chip processing device 200, the batch processing device 300, and the transfer unit 400.

The control unit 500 controls the wafer processing apparatus 200 so that the wafer processing apparatus 200 processes the substrate W. For example, the control unit 500 moves the baffle 204 to control the opening and closing of the opening 202 a of the chamber 202.

In addition, the control unit 500 controls the phosphoric acid liquid supply unit 220, the rinse liquid supply unit 230, the chemical liquid supply unit 240, and the etching liquid supply unit 250. For example, the control unit 500 controls the phosphoric acid liquid valve 223, the rinse liquid valve 233, the chemical liquid valve 243, and the etching liquid valve 253, and controls the supply of the phosphoric acid liquid L1, the rinse liquid Lr, the chemical liquid Lc, and the etching liquid Le. Furthermore, the control unit 500 controls the phosphoric acid liquid nozzle moving unit 226, the chemical liquid nozzle moving unit 244, and the etching liquid nozzle moving unit 254, and controls the positions of the phosphoric acid liquid valve 223, the chemical liquid valve 243, and the etching liquid valve 253.

The control unit 500 controls the transfer unit 400 so that the transfer unit 400 transfers the substrate W from the wafer processing apparatus 200 to the batch processing apparatus 300. In addition, the control unit 500 may also control the transfer unit 400 such that the transfer unit 400 transfers the substrate W from the batch processing apparatus 300 to the single wafer processing apparatus 200.

The control unit 500 controls the batch processing apparatus 300 so that the batch processing apparatus 300 processes the substrate W. For example, the control unit 500 controls the processing tank 310 to store the phosphoric acid liquid L2 in the processing tank 310. In addition, the control unit 500 controls the stowage unit 320 so that the stowage unit 320 receives the substrate W from the transfer unit 400 and soaks the received substrate W in the phosphoric acid solution in the processing tank 310.

The control unit 500 includes a processor 510 and a memory unit 520. The processor 510 has, for example, a central processing unit (CPU). Alternatively, the processor 510 may also have a general-purpose computing machine.

The memory part 520 stores data and computer programs. The storage unit 520 includes a main storage device and an auxiliary storage device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk drive. The memory 520 may also include removable media. The processor 510 executes the computer program stored in the storage unit 520 to execute the substrate processing method.

Furthermore, a computer program of a predetermined procedure is stored in the storage unit 520. Alternatively, the control unit 500 can control the single chip processing device 200, the batch processing device 300, and the transfer unit 400 in a manner to operate according to the determined procedure. . Alternatively, the control unit 500 may control the single chip processing device 200, the batch processing device 300, and the transfer unit 400 based on the measurement result. For example, the control unit 500 may control the single wafer processing device 200, the batch processing device 300, and the transfer unit 400 based on the measurement result of the phosphoric acid solution L.

In addition, in the above description with reference to FIGS. 1, 12 and 13, the single-chip processing apparatus 200 and the batch processing apparatus 300 are arranged close to each other, but the present embodiment is not limited to this. The single chip processing device 200 and the batch processing device 300 may also be arranged in separate places. For example, the single-chip processing device 200 and the batch processing device 300 may also be separated from the machine itself that transfers the substrate W by moving in parallel. However, preferably, the single-chip processing device 200 and the batch processing device 300 are arranged in a clean room where the same environment is controlled.

Next, the substrate processing system 100 of this embodiment will be described with reference to FIG. 15. FIG. 15 is a schematic diagram of the substrate processing system 100. The substrate processing system 100 includes a single wafer processing apparatus 200, a batch processing apparatus 300, and a transfer unit 400.

The wafer processing apparatus 200 processes the substrate W with phosphoric acid solution. The transfer unit 400 transfers the substrate W from the single wafer processing apparatus 200 to the batch processing apparatus 300. The transfer part 400 moves to the vicinity of the wafer processing apparatus 200, and the substrate W is carried out. After that, the transfer unit 400 moves from the vicinity of the single-chip processing device 200 to the vicinity of the batch processing device 300 along the X direction, and is stored on the stowage portion 320 of the batch processing device 300.

In addition to the arm portion 402, the rotating table 404, and the lifting portion 406, the transfer portion 400 further includes a guide portion 408. The guide portion 408 extends from the vicinity of the single-chip processing device 200 along the X direction to the vicinity of the batch processing device 300. The lifting part 406 can move in the X direction along the guiding part 408.

The batch processing apparatus 300 processes the substrate W with the phosphoric acid solution L2. The stowage 320 collects a plurality of substrates W and immerses them in the processing tank 310. As described above, the substrate W is processed.

Above, the embodiments of the present invention have been described with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and the present invention can be implemented in various aspects within the scope not departing from the gist. In addition, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, some constituent elements may be deleted from all the constituent elements shown in the embodiment. Furthermore, it is also possible to appropriately combine the constituent elements of different embodiments. The drawing is a schematic representation of each component on the main body for easy understanding. The thickness, length, number, interval, etc. of each component in the figure may also be different from the actual situation due to the state of the drawing. situation. In addition, the material, shape, size, etc. of each component shown in the above-mentioned embodiment are merely examples, and are not particularly limited, and various changes can be made within a range that does not substantially deviate from the effects of the present invention. (Industrial availability)

The present invention can be preferably used in a substrate processing system and a substrate processing method for phosphoric acid processing of a substrate.

100: Substrate processing system 200: Single chip processing device 200A~200D: Single chip processing department 202: Chamber 202a: opening 204: Baffle 210: Board holding part 211: Rotating Base 212: Chuck pin 213: Rotation axis 214: Rotating Motor 220: Phosphoric acid liquid supply part 221: Phosphoric acid liquid nozzle 222: Phosphoric acid liquid piping 223: Phosphoric Acid Liquid Valve 224: Phosphoric acid liquid temperature adjustment device 225: nozzle arm 226: Phosphoric acid liquid nozzle moving part 230: flushing fluid supply part 231: Washing fluid nozzle 232: flushing fluid piping 233: flushing fluid valve 240: Liquid medicine supply department 241: Liquid Nozzle 242: Chemical piping 243: Liquid Valve 244: Chemical liquid nozzle moving part 250: Etching solution supply part 251: Etching liquid nozzle 252: Etching solution piping 253: Etching Liquid Valve 254: Etching liquid nozzle moving part 270: Cup 280: Silicon concentration meter 282: Piping 300: Batch processing device 310: processing tank 320: Stowage Department 322: Grip 324: Rotating part 326: Support 400: Transfer Department 402: Arm 404: Rotating table 406: Lifting Department 408: Guiding Department 500: Control Department 510: processor 520: Memory Department 700: Batch processing device 710: processing tank 720: Loop Path 730: Pump 740: filter 800: Single chip processing device 820: Phosphoric acid liquid supply part AX1: Rotation axis AX2: axis of rotation D: gap Dr: rotation direction Ea: silicon nitride layer F1, F2: Flow IR: Indexer Robot L: Phosphoric acid solution L1: The first phosphoric acid solution L2: 2nd phosphoric acid solution Lc: liquid medicine Le: etching solution LP: load port Lr: rinse fluid M: Layered structure Ma: Silicon oxide layer Mb: pillar P: dissolved matter R: Arrow S: Substrate TW: Tower U: Arrow W: substrate

FIG. 1 is a schematic diagram of the substrate processing system of this embodiment. FIG. 2 is a flowchart for explaining the substrate processing method of this embodiment. 3(a) and (b) are schematic views of the substrate before phosphoric acid treatment by the substrate processing method of this embodiment, and FIG. 3(c) is a schematic view of the substrate after phosphoric acid treatment by the substrate processing method of this embodiment. Fig. 4(a) is a schematic diagram of a substrate before being processed by a single-chip processing device in the substrate processing system of this embodiment, and Fig. 4(b) is a schematic diagram of a substrate before being processed by the single-chip processing device in the substrate processing system of this embodiment Figure 4(c) is a schematic diagram of a substrate processed by a single-chip processing device in the substrate processing system of this embodiment, and Figure 4(d) is a schematic diagram of the substrate processing system of this embodiment A schematic diagram of a substrate before being processed by the batch processing device. FIG. 4(e) is a schematic diagram of the substrate after being processed by the batch processing device in the substrate processing system of this embodiment. FIG. 5 is a schematic diagram of a substrate processed by the substrate processing apparatus of the comparative example. Figure 6(a) is a schematic diagram of a batch processing device, Figure 6(b) is a schematic diagram showing the flow of phosphoric acid solution near the substrate during substrate processing by the batch processing device, and Figure 6(c) is a batch A schematic diagram of the substrate being processed by the secondary processing device. Figure 6(d) is a schematic diagram of the single-chip processing device, and Figure 6(e) shows the flow of phosphoric acid near the substrate during substrate processing by the single-chip processing device. Schematic diagram, Fig. 6(f) is a schematic diagram of a substrate processed by a single-chip processing device. FIG. 7 is a schematic diagram of a single-chip processing device in the substrate processing system of this embodiment. FIG. 8 is a flowchart for explaining the substrate processing method of this embodiment. Fig. 9 is a schematic diagram of a single chip processing device in the substrate processing system of this embodiment. FIG. 10 is a flowchart for explaining the substrate processing method of this embodiment. FIG. 11 is a schematic diagram of the substrate processing system of this embodiment. FIG. 12 is a schematic diagram of the substrate processing system of this embodiment. FIG. 13 is a schematic diagram of the substrate processing system of this embodiment. Fig. 14 is a block diagram of the substrate processing system of this embodiment. FIG. 15 is a schematic diagram of the substrate processing system of this embodiment.

100: Substrate processing system

200: Single chip processing device

200A~200D: Single chip processing department

202: Chamber

210: Board holding part

220: Phosphoric acid liquid supply part

300: Batch processing device

310: processing tank

320: Stowage Department

L1: The first phosphoric acid solution

L2: 2nd phosphoric acid solution

W: substrate

Claims (8)

A substrate processing method, which includes the following steps: A substrate holding step of holding the substrate by the substrate holding portion, the substrate having a three-dimensional layered structure in which a plurality of layers including silicon nitride layers face each other through a gap; The first etching step includes rotating the substrate held by the substrate holding portion while supplying a first phosphoric acid solution to the substrate to etch the plurality of build-up layers; An interrupting step, which interrupts the etching of the plurality of build-up layers performed by the first etching step while the silicon nitride layer remains; A moving step, which takes out the substrate from the substrate holding portion and moves it toward the processing tank; and In the second etching step, the substrate is immersed in the second phosphoric acid solution stored in the processing tank, and the etching of the plurality of stacked layers that has been interrupted is restarted. Such as the substrate processing method of claim 1, wherein: The first phosphoric acid solution contains silicon of a predetermined concentration before being supplied to the substrate, The second phosphoric acid solution contains a predetermined concentration of silicon before the substrate is immersed in the processing tank, The silicon concentration of the second phosphoric acid solution is set to be lower than the silicon concentration of the first phosphoric acid solution. The substrate processing method of claim 1 or 2, wherein, in the first etching step, the silicon concentration of the first phosphoric acid solution remaining on the substrate or the first phosphoric acid solution flowing out of the substrate is measured , Based on the measurement result of the silicon concentration of the first phosphoric acid solution, the interrupt step is started. The substrate processing method of claim 3, wherein the interrupt step is started based on the measurement result being below a predetermined threshold value. The substrate processing method of claim 3, wherein the time from the start of the first etching step to the start of the interruption step is based on the etching process conditions of the first etching step and the start of the first etching step to the interruption step The time to start is determined by establishing the query form of the relationship. The substrate processing method of claim 1 or 2, wherein the time for etching the substrate with the second phosphoric acid solution in the second etching step is greater than the time for etching the substrate with the first phosphoric acid solution in the first etching step Longer. The substrate processing method of claim 1 or 2, wherein the temperature of the first phosphoric acid solution discharged toward the substrate is higher than the set temperature of the second phosphoric acid solution. A substrate processing system that processes a substrate. The substrate has a three-dimensional layered structure in which a plurality of layers including silicon nitride layers oppose each other through a gap; the substrate processing system is provided with a single-chip processing device and batch processing Device, The above single chip processing device has: A substrate holding portion that holds the above-mentioned substrate; and A phosphoric acid solution supply unit for supplying a first phosphoric acid solution for performing a first etching process to the substrate, and the first etching process is to perform the plurality of substrates while rotating the substrate held by the substrate holding unit A build-up of etching; The batch processing apparatus has a processing tank for storing a second phosphoric acid solution for performing the second etching process, and the second etching process is interrupted by the first etching process in a state where the silicon nitride layer remains. After the etching of the plurality of build-up layers, the interrupted etching of the plurality of build-up layers is restarted.

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