TW202032741A - Laser bonding apparatus used in nitrogen atmosphere - Google Patents

Abstract

The present invention relates to a laser bonding apparatus used in nitrogen atmosphere, and more particularly to a laser bonding apparatus used in nitrogen atmosphere that is applied to irradiate laser beam on a chip for bonding in nitrogen atmosphere formed by using nitrogen, which is one of inert gases. Because the laser bonding apparatus used in nitrogen atmosphere performs the bonding in nitrogen atmosphere, the present invention has the advantage of eliminating the problems caused by oxidation to achieve a bonding process with high quality and reliability. Moreover, because the laser bonding apparatus used in nitrogen atmosphere according to the present invention does not cause the temperature of the semiconductor chip itself to be greatly increased during the semiconductor chip bonding process, there is an effect of solving the problems that may occur due to damage or thermal expansion of the semiconductor chip.

Description

Laser connection device for semiconductor chip in nitrogen environment

The present invention relates to a laser bonding device used in a nitrogen environment, and more specifically to a nitrogen gas used for bonding wafers by irradiating laser light in a nitrogen environment formed by using nitrogen as a kind of inert gas Environmental laser bonding device.

A semiconductor chip bonding device is a device that picks up a semiconductor chip formed on a wafer, or cuts a semiconductor chip on the wafer and attached it to an adhesive film called a blue sheet, and transfers it to It is used for the lead frame or the target of the substrate in the next process and attaches it.

The semiconductor wafer bonding apparatus as described above includes a reflow process as one of the general heat treatment processes. The reflow process is a process in which heat is applied to the semiconductor wafer transferred to the target to bond the connection part of the semiconductor wafer and the connection part of the target to each other. Such a general reflow process has the problem that it takes a lot of time and causes the temperature of the semiconductor wafer itself to rise excessively. Depending on the circumstances, the semiconductor chip may be thermally damaged due to the reflow process.

In order to solve the above-mentioned problems, a laser bonding is developed that does not significantly increase the temperature of the semiconductor wafer itself and can quickly increase the temperature of the solder bumps or solder balls of the semiconductor wafer to be bonded to the target.

On the other hand, if the bonding as described above is achieved in air, various problems due to oxidation will occur. Solder melted in an oxygen environment has low surface tension and low absolute bonding strength, and voids are formed in the bonding part, which may cause poor bonding. In addition, oxidation causes pollution to peripheral components such as semiconductor wafers and printed circuit boards (PCBs). Therefore, this type of pollution also requires additional cleaning processes. As a result, there is a problem that the laser bonding realized in the air has low bonding quality.

In order to solve this problem, it is suitable to perform bonding in a vacuum state. However, in order to perform the process in a vacuum state, additional equipment such as a vacuum pump and a clean room is required, so there is a problem of large investment costs. Therefore, it is effective to perform laser bonding in a nitrogen environment using nitrogen which is a kind of inert gas.

[The problem to be solved by the invention]

The present invention is proposed to solve the above-mentioned problems, and its purpose is to provide a nitrogen environment that can quickly heat the solder bumps or solder balls of a semiconductor wafer and bond the semiconductor wafer to a target in a nitrogen environment The laser joining device. [Means to solve the problem]

In order to achieve the object, the laser bonding device for nitrogen environment according to the present invention is characterized by including: a target mounting unit for mounting a target on which a plurality of semiconductor wafers are arranged; a laser head, The wafer is irradiated with laser light so that a plurality of semiconductor wafers arranged on the target mounted on the target mounting unit can be bonded to the target; and a nitrogen gas supply unit having a device arranged around the target mounting unit The transfer member and the nitrogen discharge port formed in the transfer member are used to supply nitrogen gas to the target mounted on the target mounting unit. [Effects of the invention]

Since the laser bonding device used in a nitrogen environment according to the present invention can perform bonding in a nitrogen environment, it has the following advantages: it can block the problems caused by oxidation and complete the bonding process with high quality and reliability.

In addition, since the temperature of the semiconductor wafer itself is not increased significantly during the bonding process of the semiconductor wafer, there is an effect of solving problems that may occur due to damage or thermal expansion of the semiconductor wafer.

Hereinafter, with reference to the accompanying drawings, the laser bonding device used in a nitrogen environment according to the present invention will be described.

First, referring to FIG. 1, the first embodiment of the laser bonding device for nitrogen environment according to the present invention will be described. FIG. 1 is a perspective view of a laser bonding device used in a nitrogen environment according to a first embodiment of the present invention.

1, the laser bonding device used in a nitrogen environment of this embodiment includes a target mounting unit 100, a laser head 200, and a nitrogen supply unit 300.

The target mounting unit 100 is configured to transfer and fix a target on which a plurality of semiconductor wafers are arranged. The target of this embodiment includes all kinds of objects that can be bonded to semiconductor wafers. As an example of such a target, a substrate such as a printed circuit board (PCB) can be cited. The semiconductor chip can be placed on the target by means such as pre-bonding. Here, pre-bonding refers to a bonding process of grafting the semiconductor wafer and the target with an adhesive material before the connecting portions such as solder bumps formed on the semiconductor wafer and the connecting portions such as pads of the target are completely bonded.

The target mounting unit 100 transfers the target loaded in a separate device to the laser bonding device for nitrogen environment according to this embodiment. The target mounting unit 100 fixes the transferred target to the lower part of the laser head 200. The target mounting unit 100 fixes the target by means such as vacuum adsorption.

The laser head 200 attaches a plurality of semiconductor wafers pre-bonded to the target to the target. The laser head 200 includes a light source that generates laser light. The laser light generated in the light source of the laser head 200 is transmitted to the semiconductor wafer, and the laser light joins the semiconductor wafer and the target. In the case of this embodiment, the laser head 200 includes an infrared camera, a height sensor, and a vision camera. The infrared camera of the laser head 200 is set on the laser head 200 to measure the temperature of the semiconductor wafer. The height sensor measures the distance between the laser head 200 and the semiconductor wafer. The vision camera checks the alignment state of the semiconductor wafer and the laser head 200.

1, the nitrogen supply unit 300 includes a transmission member 310, a nitrogen discharge port 320 and a gas adjustment part 330.

The transmission member 310 includes a transmission frame 311, a transparent member 312 and a supply flow path 313.

The transfer frame 311 is formed so as to cover the target. The transmission frame 311 is formed in a form in which the central part facing the laser head 200 is opened. The transfer frame 311 can be made to a size similar to the target, and can be made larger than the target as appropriate. 1, in the case of this embodiment, the transfer frame 311 is made larger than the target. The transmission frame 311 is arranged between the laser head 200 and the target.

The transparent part 312 is provided in the transfer frame 311. The transparent part 312 is arranged in the central part of the transfer frame 311. The transparent member 312 is formed of a transparent material so that the laser light irradiated from the laser head 200 is transmitted to the target fixed on the lower side of the transmission frame 311. In the case of this embodiment, the transparent member 312 is formed of Quartz.

The supply flow path 313 is formed in the transfer frame 311. The supply flow path 313 is formed so as to allow the flow of nitrogen gas. In the case of this embodiment, the supply channel 313 is formed on both sides of the transmission frame 311. The supply flow path 313 is connected to a nitrogen gas tank storing nitrogen gas.

The nitrogen discharge port 320 is formed in the transfer frame 311 and connected to the supply flow path 313. In the case of this embodiment, the nitrogen discharge ports 320 are formed in the form of slits on both sides of the transmission frame 311. The nitrogen gas of the supply channel 313 is supplied to the target through the nitrogen discharge port 320.

In the case of this embodiment, the gas regulator 330 is provided at the front end of the supply flow path 313. The gas adjustment unit 330 adjusts the amount of nitrogen gas passed through the supply flow path 313. When the gas adjusting unit 330 adjusts the amount of nitrogen gas supplied from the supply flow path 313, it also adjusts the amount of nitrogen gas supplied to the target via the nitrogen discharge port 320 at the same time.

Hereinafter, the operation of the laser bonding device for nitrogen atmosphere according to the first embodiment constructed as described above will be described.

First, the target placement unit 100 transfers the target to the lower part of the laser head 200. When the transfer of the target is completed, the target placement unit 100 vacuum sucks the target and fixes the position of the target.

Next, the process in which the nitrogen supply unit 300 supplies nitrogen to the target and creates a nitrogen environment around the target will be described.

The nitrogen gas stored in the nitrogen tank is transferred through the supply flow paths 313 formed on both sides of the transfer frame 311. The nitrogen gas passed through the supply flow path 313 is injected from the nitrogen discharge port 320 of the nitrogen supply unit 300. As described above, the nitrogen discharge ports 320 are formed in the form of slits on both sides of the transfer frame 311. The nitrogen gas injected through the nitrogen gas discharge port 320 flows from the side of the target toward the target. The nitrogen gas flowing in from both sides concentrates on the center part of the target. The upper side of the target is closed by the transparent member 312 provided on the transfer frame 311, so the nitrogen gas flows out in the direction of fixing the target. Thereby, a nitrogen atmosphere is formed around the target.

As described above, when a nitrogen environment is formed around the target, laser light is irradiated from the light source of the laser head 200. The laser light is transmitted through the transparent member 312 of the transmitting member 310 to a target fixed on the lower side of the laser head 200. When the laser light is transmitted to the semiconductor wafer pre-bonded to the target, the temperature of the connection portion such as the solder bump formed on the semiconductor wafer instantly rises. Therefore, the connection part of the semiconductor wafer is melted. The infrared camera of the laser head 200 photographs the connection part of the semiconductor wafer, and determines whether the temperature of the connection part rises to the melting point. If the temperature of the connection part rises above the melting point, the laser head 200 stops irradiating the laser light. When the laser light irradiation is terminated, the temperature of the connecting portion of the semiconductor wafer drops instantaneously, and the connecting portion of the semiconductor wafer instantaneously solidifies. Thereby, the connection part of the semiconductor wafer and the connection part of the target are joined.

The laser bonding device for nitrogen environment according to the present embodiment bonds the semiconductor wafer to the target by laser bonding using laser light. Unlike the heat treatment process that is generally widely used, laser bonding can only rapidly increase the temperature of the junction formed on the semiconductor wafer. In the case of this embodiment, the semiconductor wafer is bonded to the target by laser bonding. Therefore, it is possible to effectively prevent thermal damage that may occur due to an excessive increase in the temperature of the semiconductor wafer itself. In addition, the problem of poor alignment between the semiconductor wafer and the target caused by the thermal expansion of the semiconductor wafer can be significantly reduced.

In addition, in the case of the laser bonding device used in a nitrogen environment according to the present embodiment, it is configured to be able to perform laser bonding after forming a nitrogen environment around the target. The nitrogen gas is continuously injected from the nitrogen gas outlet 320 of the nitrogen gas supply unit 300 to maintain the blocking state between the target and the surrounding air. When a nitrogen environment is formed, the concentration of oxygen becomes lower, so the problem of oxidation formed at the junction between the target and the semiconductor can be effectively solved. As a result, the laser bonding device for use in a nitrogen atmosphere according to the present embodiment improves inspection reliability by minimizing the contamination of the bonding site due to oxidation, and reduces the defect rate such as voids that may occur at the bonding site. Improve bonding quality. The solder melted in a nitrogen environment has a higher surface tension than the solder melted in a normal air environment, so that the semiconductor wafer and the target can be more closely bonded. In summary, the laser bonding device used in a nitrogen environment according to the present embodiment can perform laser bonding in a nitrogen environment, thereby obtaining a high-quality bonding result.

On the other hand, as described above, the gas regulator 330 provided at the tip of the supply flow path 313 adjusts the amount of nitrogen gas supplied from the supply flow path 313. If the amount of nitrogen gas supplied from the supply flow path 313 is adjusted, the amount of nitrogen gas injected through the nitrogen discharge port 320 can be adjusted. As a result, the gas adjustment unit 330 can adjust the amount of nitrogen gas discharged from the nitrogen gas discharge port 320. At the time when the supply of nitrogen gas to the target is started, the gas adjustment part 330 is adjusted to fully inject nitrogen gas from the nitrogen discharge port 320. With the operation of the gas regulating part 330, the concentration of nitrogen can be rapidly increased. When the concentration of nitrogen is sufficiently increased, the gas adjustment part 330 is adjusted to reduce the amount of nitrogen injected through the nitrogen discharge port 320, and the amount of gas injection is adjusted to maintain the concentration of nitrogen during the operation. Through the operation of the gas regulating part 330, a nitrogen environment can be quickly formed, and the cost increase caused by excessive use of nitrogen can be effectively solved.

Hereinafter, referring to FIGS. 2 and 3, the second embodiment of the laser bonding device for nitrogen environment according to the present invention will be described. 2 is a perspective view of a laser bonding device for nitrogen environment according to a second embodiment of the present invention, and FIG. 3 is a cross-sectional view of the laser bonding device for nitrogen environment shown in FIG. 2 along line III-III.

Referring to FIG. 2, the laser bonding device used in a nitrogen environment of this embodiment includes a target mounting unit 100, a laser head 200 and a nitrogen supply unit 400. The rest of the configuration except for the nitrogen gas supply unit 400 is the same as the configuration of the first embodiment described above, so detailed description is omitted. The components other than the nitrogen supply unit 400 use the same part numbers as in the first embodiment.

The nitrogen supply unit 400 of this embodiment includes a transmission member 410, a nitrogen discharge port 420 and a gas adjustment part 430.

2 and 3, the transmission member 410 includes a transmission plate 411, a plurality of through ports 412, and a supply flow path 413.

The transfer plate 411 is formed in a plate shape and is arranged on the upper side of the target. A plurality of transmission ports 412 are formed in the transfer plate 411 at positions corresponding to the semiconductor wafer arranged on the target. The transmission port 412 is formed to penetrate the transmission plate 411. The laser light irradiated from the laser head is transmitted to the target fixed on the lower side of the transmission plate 411 through the transmission port 412.

The supply flow path 413 is formed inside the transfer plate 411. The supply flow path 413 distributes nitrogen gas to the permeation port 412.

In the case of this embodiment, there are a plurality of nitrogen discharge ports 420. The nitrogen discharge ports 420 are arranged along the inner wall of the permeation port 412. The nitrogen discharge port 420 is connected to the supply flow path 413. Referring to FIG. 3, at the portion connected to the nitrogen gas discharge port 420, the supply flow path 413 is formed obliquely so that the nitrogen gas discharge port 420 faces the semiconductor wafer fixed to the lower side of the transfer plate 411. 3, the supply flow path 413 is formed obliquely in the lower direction and is connected to the nitrogen gas discharge port 420.

In the case of this embodiment, the gas regulator 430 is provided at the tip of the supply flow path 413. The gas adjustment unit 430 adjusts the amount of nitrogen gas passed through the supply flow path 413. If the gas regulator 430 adjusts the amount of nitrogen gas supplied from the supply flow path 413, the amount of nitrogen gas supplied to the target via the nitrogen discharge port 420 can also be adjusted simultaneously.

In the case of this embodiment, the gas regulator 430 is provided at the tip of the supply flow path 413. The gas adjustment unit 430 adjusts the amount of nitrogen gas passed through the supply flow path 413. If the gas regulator 430 adjusts the amount of nitrogen gas supplied from the supply flow path 413, the amount of nitrogen gas supplied to the target via the nitrogen discharge port 420 can also be adjusted simultaneously.

Hereinafter, the operation of the laser bonding device for nitrogen atmosphere according to the second embodiment constructed as described above will be described.

As shown in the first embodiment, the target to which the semiconductor wafer is pre-bonded is transferred to the lower side of the laser head 200 and fixed by the target mounting unit 100 of the target mounting unit 100.

In the state as described above, the nitrogen supply unit 400 forms a nitrogen atmosphere at the target. The nitrogen gas stored in the nitrogen tank is transmitted through the supply flow path 413 of the transmission member 410. The nitrogen gas flowing along the supply flow path 413 is distributed and discharged to the target through the nitrogen gas discharge port 420 formed in the transmission port 412 of the transmission member 410. Nitrogen gas is sprayed together from a plurality of nitrogen gas discharge ports 420 formed to directly discharge nitrogen gas toward the semiconductor wafer. With this supply of nitrogen, a nitrogen atmosphere is rapidly formed around the target. As described above, the supply flow path 413 connected to the nitrogen discharge port 420 is formed obliquely, so the nitrogen discharged through the nitrogen discharge port 420 is directly injected to the semiconductor wafer. In this way, the laser bonding device for a nitrogen environment according to the present embodiment can directly spray nitrogen gas to the semiconductor wafer through the multiple nitrogen discharge ports 420 formed in the multiple permeation ports 412, thereby rapidly forming a nitrogen environment. In addition, the direct injection of nitrogen can effectively block the air around the semiconductor wafer from the semiconductor wafer.

As described above, when a nitrogen environment is formed around the target, laser light is irradiated from the light source of the laser head 200. The laser light is transmitted to the target fixed on the lower side of the laser head 200 through the transmission port 412 formed in the transmission plate 411. When the laser light is transmitted to the semiconductor wafer pre-bonded to the target, the temperature of the connection portion such as the solder bump formed on the semiconductor wafer instantly rises. Therefore, the connection part of the semiconductor wafer is melted. The infrared camera of the laser head 200 photographs the connection part of the semiconductor chip and determines whether the temperature of the connection part rises to the melting point. If the temperature of the connection part rises above the melting point, the laser head 200 stops irradiating the laser light. When the laser light irradiation is terminated, the temperature of the connecting portion of the semiconductor wafer drops instantaneously, and the connecting portion of the semiconductor wafer instantaneously solidifies. Thereby, the connection part of the semiconductor wafer and the connection part of the target are joined.

The laser bonding device for nitrogen environment according to the present embodiment bonds the semiconductor wafer to the target by laser bonding using laser light. Unlike the heat treatment process that is generally widely used, laser bonding can only rapidly increase the temperature of the junction formed on the semiconductor wafer. In the case of this embodiment, the semiconductor wafer is bonded to the target by laser bonding. Therefore, it is possible to effectively prevent thermal damage that may occur due to an excessive increase in the temperature of the semiconductor wafer itself. In addition, the problem of poor alignment between the semiconductor wafer and the target caused by the thermal expansion of the semiconductor wafer can be significantly reduced.

According to the case of the laser bonding device used in the nitrogen environment of the present embodiment, it is configured to be able to perform laser bonding after forming a nitrogen environment around the target. By continuously injecting nitrogen gas from the nitrogen gas outlet 420 of the nitrogen gas supply unit 400, the target can be kept blocked from the surrounding air. When a nitrogen environment is formed, the concentration of oxygen becomes lower, so the problem of oxidation formed at the junction between the target and the semiconductor can be effectively solved. As a result, the laser bonding device for use in a nitrogen atmosphere according to the present embodiment improves inspection reliability by minimizing the contamination of the bonding site due to oxidation, and reduces the defect rate such as voids that may occur at the bonding site. Improve bonding quality. The solder melted in a nitrogen environment has a higher surface tension than the solder melted in a normal air environment, so that the semiconductor wafer and the target can be more closely bonded. In summary, the laser bonding device used in a nitrogen environment according to the present embodiment can perform laser bonding in a nitrogen environment, thereby obtaining a high-quality bonding result.

On the other hand, as described above, the gas adjustment part 430 of the nitrogen gas supply unit 400 adjusts the amount of nitrogen gas passed through the supply flow path 413. If the amount of nitrogen gas passed through the supply flow path 413 is adjusted, the amount of nitrogen gas injected from the nitrogen discharge port 420 can be adjusted. In other words, the gas adjustment unit 430 can adjust the amount of nitrogen gas injected through the nitrogen gas discharge port 420. At the point in time when nitrogen is supplied to the target, the gas adjustment part 430 is adjusted to sufficiently inject nitrogen from the nitrogen discharge port 420. With the operation of the gas regulating part 430, the concentration of nitrogen can be rapidly increased. When the concentration of nitrogen is sufficiently increased, the gas adjustment part 430 is adjusted to reduce the amount of nitrogen injected through the nitrogen discharge port 420, and the amount of gas injection is adjusted to maintain the concentration of nitrogen during the operation. Through the operation of the gas regulating part 430, a nitrogen environment can be quickly formed, and the cost increase caused by excessive use of nitrogen can be effectively solved.

Hereinafter, referring to FIG. 4, a third embodiment of the laser bonding device for nitrogen environment according to the present invention will be described. Fig. 4 is a perspective view of a laser bonding device for a nitrogen environment according to a third embodiment of the present invention.

Referring to FIG. 4, the laser bonding device for nitrogen environment according to this embodiment includes a target mounting unit 100, a laser head 200 and a nitrogen supply unit 500. The rest of the configuration except for the nitrogen gas supply unit 500 is the same as the configuration of the first embodiment described above, so detailed description is omitted. The components other than the nitrogen supply unit 500 use the same part numbers as in the first embodiment.

The nitrogen supply unit 500 of this embodiment includes a transmission component 510, a nitrogen discharge port 520 and a gas adjustment part 530.

The transmission part 510 includes a plurality of nitrogen pipes 511. The nitrogen pipe 511 is a pipe in the form of a pipe formed so as to allow the flow of nitrogen. Referring to FIG. 4, the nitrogen pipe 511 of this embodiment is arranged to surround the four sides of the target. The nitrogen discharge port 520 is formed in the nitrogen pipe 511 so as to face the target.

The gas adjustment part 530 is provided at the tip of the nitrogen pipe 511 and adjusts the amount of nitrogen gas transferred from the nitrogen tank to the nitrogen pipe 511. By adjusting the amount of nitrogen flowing in the nitrogen pipe 511, the amount of nitrogen sprayed from the nitrogen discharge port 520 formed in the nitrogen pipe 511 can also be adjusted at the same time.

Hereinafter, the operation of the laser bonding device for nitrogen atmosphere of the third embodiment constructed as described above will be described.

As shown in the first embodiment, the target on which the semiconductor wafer is pre-bonded is transferred to the lower side of the laser head 200 and fixed by the target mounting unit of the target mounting unit 100.

In the state described above, the nitrogen supply unit 500 forms a nitrogen atmosphere at the target. The nitrogen gas stored in the nitrogen gas tank moves to a nitrogen gas pipe 511 arranged around the target. The nitrogen gas flowing along the nitrogen pipe 511 is injected through the nitrogen discharge port 420 formed in the nitrogen pipe 511. As described above, the nitrogen discharge port 520 is formed in the nitrogen pipe 511 so as to face the target, and therefore the nitrogen gas injected from the nitrogen discharge port 520 is directly injected to the semiconductor wafer pre-bonded to the target. Nitrogen gas is injected together from the nitrogen gas outlet 520 formed by the nitrogen gas pipes 511 arranged on the four sides of the target, and a nitrogen atmosphere is quickly formed. In this way, the laser bonding device used in a nitrogen environment according to the present embodiment can directly spray nitrogen gas to the semiconductor wafer through the nitrogen discharge port 520 formed in the nitrogen pipe 511 arranged around the target, thereby rapidly forming a nitrogen environment. In addition, the direct injection of nitrogen can effectively block the air around the semiconductor wafer from the semiconductor wafer.

As described above, when a nitrogen environment is formed around the target, laser light is irradiated from the light source of the laser head 200. The laser light is transmitted to a target fixed on the lower side of the laser head 200. When the laser light is transmitted to the semiconductor wafer pre-bonded to the target, the temperature of the connection portion such as the solder bump formed on the semiconductor wafer instantly rises. Therefore, the connection part of the semiconductor wafer is melted. The infrared camera of the laser head 200 photographs the connection part of the semiconductor chip and determines whether the temperature of the connection part rises to the melting point. If the temperature of the connection part rises above the melting point, the laser head 200 stops irradiating the laser light. When the laser light irradiation is terminated, the temperature of the connecting portion of the semiconductor wafer drops instantaneously, and the connecting portion of the semiconductor wafer instantaneously solidifies. Thereby, the connection part of the semiconductor wafer and the connection part of the target are joined.

The laser bonding device for nitrogen environment according to the present embodiment bonds the semiconductor wafer to the target by laser bonding using laser light. Unlike the heat treatment process that is generally widely used, laser bonding can only rapidly increase the temperature of the junction formed on the semiconductor wafer. In the case of this embodiment, the semiconductor wafer is bonded to the target by laser bonding. Therefore, it is possible to effectively prevent thermal damage that may occur due to an excessive increase in the temperature of the semiconductor wafer itself. In addition, the problem of poor alignment between the semiconductor wafer and the target caused by the thermal expansion of the semiconductor wafer can be significantly reduced.

According to the case of the laser bonding device used in the nitrogen environment of the present embodiment, it is configured to be able to perform laser bonding after forming a nitrogen environment around the target. By continuously spraying nitrogen gas from the nitrogen gas outlet 520 of the nitrogen gas supply unit 500, the air around the target is blocked from the target. When a nitrogen environment is formed, the concentration of oxygen becomes lower, so the problem of oxidation formed at the junction between the target and the semiconductor can be effectively solved. As a result, the laser bonding device for use in a nitrogen environment according to the present embodiment minimizes the contamination of the bonding part due to oxidation, improves inspection reliability, and reduces defective rates such as voids that may occur at the bonding part. Improve bonding quality. The solder melted in a nitrogen environment has a higher surface tension than the solder melted in a normal air environment, so that the semiconductor wafer and the target can be more closely bonded. In summary, the laser bonding device used in a nitrogen environment according to the present embodiment can perform laser bonding in a nitrogen environment, thereby obtaining a high-quality bonding result.

On the other hand, as described above, the gas regulator 530 of the nitrogen gas supply unit 500 provided at the tip of the nitrogen pipe 511 regulates the amount of nitrogen gas injected through the nitrogen gas discharge port 520. At the time when the supply of nitrogen gas to the target is started, the gas adjustment part 530 is adjusted to fully inject nitrogen gas from the nitrogen gas discharge port 520. With the operation of the gas regulating part 530, the concentration of nitrogen can be rapidly increased. When the concentration of nitrogen is sufficiently increased, the gas adjustment part 530 is adjusted to reduce the amount of nitrogen injected through the nitrogen discharge port 520, and the amount of gas injection is adjusted to maintain the concentration of nitrogen during the operation. Through the operation of the gas regulating part 530, a nitrogen environment can be quickly formed, and the cost increase caused by excessive use of nitrogen can be effectively solved.

As mentioned above, the present invention has been described with preferred examples, but the scope of the present invention is not limited to the form described and illustrated above.

For example, the laser head 200 including an infrared camera, a height sensor, and a vision camera is described above. However, the main function of the laser head is to generate laser light and irradiate the semiconductor chip, such as an infrared camera, a height sensor The components such as the vision camera can be omitted no matter how many.

In the above description, the target mounting unit 100 vacuum suctions and fixes the target, but the position of the target can be fixed by various known configurations of the target mounting unit. For example, the target mounting unit 100 may fix the target by a method such as a jig that fixes the position of the target.

In addition, the gas regulating parts 330, 430, and 530 of the nitrogen gas supply units 300, 400, and 500 described above may be omitted.

In addition, in the case of the first embodiment above, it is described that the transparent member 312 of the transmission member 310 opposite to the laser head 200 is formed of a transparent material such as quartz to transmit laser light, but the transparent member can be changed to be capable of transmitting laser light. Various transparent materials.

In addition, in the case of the first embodiment above, it is explained that the supply flow path 313 of the transmission member 310 is formed on both sides of the transmission frame 311, and the nitrogen outlet 320 connected to the supply flow path 313 is also formed in the form of a slit in the transmission Both sides of the frame 311, but the position where the supply flow path is formed at the transfer frame can be changed in various ways. In the same way, the formation position of the nitrogen discharge port may be changed variously, and the form of the nitrogen discharge port may be changed to various forms other than the slit form.

In addition, the transmission port 412 of the transmission member 410 of the second embodiment described above is formed to penetrate the transmission plate 411, but the transmission port 412 may be formed of a transparent material. That is, the transparent member of the second embodiment may be made of a material such as quartz in the same way as the transparent member of the first embodiment.

In addition, it is described above that the nitrogen discharge ports 420 of the second embodiment are arranged along the inner wall of the permeation port 412, but the nitrogen discharge ports may also be formed on the lower surface of the transfer plate. In this case, the nitrogen gas sprayed through the nitrogen discharge port can be sprayed directly to the target placed on the lower side of the transfer plate.

In addition, the nitrogen pipe 511 of the third embodiment described above is arranged to surround the four sides of the target, but the nitrogen pipe 511 is a configuration for supplying nitrogen to the target, and the position of the nitrogen pipe can be changed variously.

100: Target placement unit 200: Laser head 300, 400, 500: Nitrogen supply unit 310, 410, 510: transfer parts 311: Transfer Frame 312: Transparent parts 313, 413: supply flow path 320, 420, 520: nitrogen outlet 330, 430, 530: Gas regulator 411: Pass Board 412: Through the mouth 511: Nitrogen pipe III-III: Line

FIG. 1 is a perspective view of a laser bonding device used in a nitrogen environment according to a first embodiment of the present invention. Fig. 2 is a perspective view of a laser bonding device for a nitrogen environment according to a second embodiment of the present invention. 3 is a cross-sectional view of the laser bonding device used in a nitrogen environment shown in FIG. 2 along the line III-III. Fig. 4 is a perspective view of a laser bonding device for a nitrogen environment according to a third embodiment of the present invention.

100: Target placement unit

200: Laser head

400: Nitrogen supply unit

411: Pass Board

412: Through the mouth

420: Nitrogen outlet

430: Gas Regulation Department

III-III: Line

Claims (7)

A laser joining device used in a nitrogen environment, including: A target mounting unit for mounting a target, and the target is configured with a plurality of semiconductor wafers; A laser head for irradiating the plurality of semiconductor wafers with laser light so that the plurality of semiconductor wafers arranged on the target placed on the target mounting unit can be bonded to the target; and The nitrogen gas supply unit has a transfer member arranged around the target mounting unit and a nitrogen discharge port formed in the transfer member to supply nitrogen gas to the target mounted on the target mounting unit. The laser joining device for a nitrogen environment according to claim 1, wherein the transmission member of the nitrogen supply unit includes: The transfer frame is formed to cover the target; A transparent component formed of a transparent material and arranged in the transfer frame; and A supply flow path formed in the transfer frame for the nitrogen to flow, The nitrogen discharge port of the nitrogen supply unit is formed in the transfer frame in a manner of being connected to the supply flow path. The laser joining device for a nitrogen environment according to claim 1, wherein the transmission member of the nitrogen supply unit includes: A plate-shaped transfer plate is arranged on the upper side of the target; A plurality of transmission ports are formed so as to penetrate the transfer plate at positions corresponding to the plurality of semiconductor wafers arranged on the target; and A supply flow path formed in the transfer plate to distribute the nitrogen gas to the plurality of permeation ports, The nitrogen gas discharge port of the nitrogen gas supply unit has a plurality of ports, which are respectively connected to the supply flow path and are respectively formed in the plurality of permeation ports. The laser joining device for a nitrogen environment according to claim 3, wherein the plurality of nitrogen discharge ports of the nitrogen supply unit are respectively arranged along the inner wall of the plurality of permeation ports of the transmission member. The laser bonding device for a nitrogen environment according to claim 4, wherein the supply flow path of the transmission member of the nitrogen supply unit faces the plurality of nitrogen discharge ports of the nitrogen supply unit The plurality of semiconductor wafers are extended in an inclined direction and connected to the plurality of nitrogen discharge ports. The laser joining device for a nitrogen environment according to claim 1, wherein the transmission member of the nitrogen supply unit includes: A plurality of nitrogen pipes are formed in the form of pipes for the nitrogen to flow, The nitrogen discharge port of the nitrogen supply unit is formed in the plurality of nitrogen pipes. The laser joining device for a nitrogen environment according to any one of claim 1 to claim 6, wherein the nitrogen supply unit further includes: The gas adjustment part adjusts the amount of the nitrogen gas discharged from the nitrogen gas discharge port.

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