TW202030898A - 形成用於電子裝置的電介質 - Google Patents

形成用於電子裝置的電介質 Download PDF

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TW202030898A
TW202030898A TW108133022A TW108133022A TW202030898A TW 202030898 A TW202030898 A TW 202030898A TW 108133022 A TW108133022 A TW 108133022A TW 108133022 A TW108133022 A TW 108133022A TW 202030898 A TW202030898 A TW 202030898A
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珍 瓊格曼
羅曼 福茲許
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英商弗萊克英納寶有限公司
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Abstract

一種形成限定一個或多個電子裝置的層的堆疊的方法，所述方法包括：在工件的區域上方沉積第一厚度的可固化、電介質或電介質前驅體材料；隨後至少在所述工件的所述區域上方使所述工件暴露於固化條件；以及在無任何中間圖案化操作的情況下，隨後在所述工件的所述區域上方沉積第二厚度的所述可固化材料；以及隨後至少在所述工件的所述區域上方使所述工件再次暴露於固化條件。

Description

形成用於電子裝置的電介質
發明領域 產生一起限定一個或多個電子裝置的層的堆疊涉及在所述堆疊內包含用於所述一個或多個電子裝置的電介質。
發明背景 本申請的發明人已經對形成用於電子裝置的電介質進行了廣泛研究，且已經發現能夠改進良率的技術。
發明概要 在此提供一種形成限定一個或多個電子裝置的層的堆疊的方法，所述方法包括：在工件的區域上方沉積第一厚度的可固化、電介質或電介質前驅體材料；隨後至少在所述工件的所述區域上方使所述工件暴露於固化條件；以及在無任何中間圖案化操作的情況下，隨後在所述工件的所述區域上方沉積第二厚度的所述可固化材料；以及隨後至少在所述工件的所述區域上方使所述工件再次暴露於固化條件。
根據一個實施例，所述一個或多個電子裝置包含一個或多個電晶體，且所述電介質或電介質前驅體材料是柵極電介質或柵極電介質前驅體材料。
根據一個實施例，使工件暴露於固化條件包括至少在所述工件的所述區域上方使工件暴露於固化輻射。
根據一個實施例，所述第一和第二厚度大體上相等。
根據一個實施例，可固化材料為可交聯材料，且固化輻射處於引起可交聯材料的交聯的一個或多個波長處。
根據一個實施例，所述方法包括：在所述第一固化之後且在沉積所述第二厚度的所述可固化材料之前，使工件至少在所述工件的所述區域上方經歷表面處理。
根據一個實施例，所述方法包括：沉積所述第二厚度的可固化材料包括形成所述可固化材料的溶液的膜；以及所述表面處理在所述工件的所述區域上方針對所述可固化材料的所述溶液增加工件的表面的潤濕性。
根據一個實施例，所述表面處理包括至少在所述工件的所述區域上方使工件暴露於等離子體或來自紫外燈的紫外輻射。
根據一個實施例：在沉積所述第一厚度的可固化材料之前，所述工件包含提供用於所述一個或多個電晶體的半導體溝道的半導體溝道材料層。
根據一個實施例：所述半導體溝道材料層是圖案化層：形成所述圖案化半導體溝道材料層包括經由電介質層使一層半導體溝道材料圖案化；以及所述方法包括在所述電介質層上沉積所述第一厚度的所述可固化材料。
在此還提供一種形成限定一個或多個電子裝置的層的堆疊的方法，所述方法包括：在工件上在所述工件的區域上方沉積電介質材料或電介質前驅體材料的受控量的溶液，以及隨後在工件上在所述工件的所述區域上方沉積電介質材料或電介質前驅體材料的第二受控量的所述溶液；其中在沉積電介質材料或電介質前驅體材料的所述第二受控量的所述溶液之前，使工件經歷表面處理以便在工件的所述區域上方針對柵極電介質材料或柵極電介質前驅體材料的所述溶液增加工件的表面的潤濕性。
根據一個實施例，所述一個或多個電子裝置包含一個或多個電晶體，且所述電介質或電介質前驅體材料是柵極電介質或柵極電介質前驅體材料。
根據一個實施例，所述表面處理包括使所述工件暴露於等離子體或來自紫外燈的紫外輻射。
較佳實施例之詳細說明 在下文中針對形成用於頂柵電晶體裝置的電介質的實例詳細描述本發明的第一實施例，但所述技術同等地適用于形成用於底柵電晶體裝置的電介質，且適用于形成用於依賴於經由電介質的電容耦合的例如電容器裝置等其它類型的電子裝置的電介質。
在下文中針對形成用於控制像素電極陣列的電晶體陣列的實例詳細描述本發明的第一實施例，但所述技術同等地適用於形成例如用於邏輯電路的電晶體和/或電容器等用於其它功能的一個或多個電子裝置。
在下文中針對在經由額外柵極電介質層圖案化的半導體溝道材料層上方形成柵極電介質的實例詳細描述本發明的第一實施例，但所述技術同等地適用於在以除經由額外柵極電介質層以外的方式圖案化的半導體溝道材料層上方形成柵極電介質，且適用於在未圖案化半導體溝道材料層上方形成柵極電介質。
針對形成包含有機半導體溝道的一個或多個電晶體(被稱作有機薄膜電晶體(OTFT))的柵極電介質的實例描述本發明的第一實施例，但所述技術同等地適用于形成用於包含其它類型的半導體溝道的一個或多個電晶體的柵極電介質。
第一實施例涉及在(例如塑膠)支撐膜上原位形成一起限定一個或多個電晶體(例如，電晶體陣列)的導體、半導體和電介質層的堆疊。
圖1和2示出用於在限定一個或多個電晶體的源極電極和漏極電極4、6的源極-漏極導體圖案上方形成有機聚合物半導體溝道材料的圖案化層8b的實例技術，所述圖案化層8b是原位形成在支撐元件2上。支撐元件2可例如包括在上面原位形成例如平坦化層和/或濕氣阻擋層等一個或多個層的塑膠支撐膜。圖1和2僅展示單一對源極電極/漏極電極，但源極-漏極導體圖案可同等地限定：(i)源極導體陣列，每一源極導體提供用於電晶體的有源矩陣陣列的電晶體的相應行的源極電極，且每一源極導體延伸超出所述電晶體陣列；以及(ii)漏極導體陣列，每一漏極導體提供用於電晶體陣列的相應電晶體的漏極電極。
有機聚合物半導體溝道材料的溶液通過例如旋塗技術大體上均勻地沉積在包含上文所描述的源極-漏極導體圖案的工件上方，以形成連續/未圖案化層8a。半導體溝道材料的此連續層8a的形成之前可以是例如在源極-漏極導體圖案上形成自組裝有機材料單層，這促進電荷載流子在源極-漏極導體圖案和半導體溝道材料之間的轉移。
電介質材料(或電介質材料的前驅體)的溶液通過例如旋塗技術大體上均勻地沉積在所得工件(包含有機半導體溝道材料的連續層8a)上方，以形成連續/未圖案化層。在此實例中，如下文所論述，使用介電常數比稍後沉積的電介質材料低的可固化電介質材料。
通過連續層10a的選擇性區的固化和連續層10a中因此形成的潛在溶解度圖像的顯影使可固化電介質材料的連續層10a圖案化，以通過例如反應性離子蝕刻技術形成用於使半導體溝道材料8a的連續層圖案化的掩模10b。連續層10a的選擇性固化包括使連續層10a穿過圖案化光掩模暴露於引起可固化材料中的交聯的波長處的輻射，所述交聯減小從其沉積可固化材料的溶劑中的溶解度。
可交聯材料的受控量的溶液通過例如旋塗技術大體上均勻地沉積在包含圖案化半導體和電介質層8b、10b的所得工件的上部工作表面的區域上方，以形成連續層12a。如下文相對於圖7和8所提到，上面沉積可交聯材料的受控量的所述溶液的區域可以是從其同時產生多個電晶體陣列裝置的大面積工件40一側的整個區域。
所得工件經受烘焙工藝以移除溶劑，且接著至少在連續層12a的區域上方(以及從工件的上面形成連續層12a的一側)暴露於引起可交聯材料的交聯的一個或多個波長處的固化輻射(例如紫外(UV)輻射)。所得工件接著至少在固化後的連續柵極電介質層12b的區域上方經受表面處理，所述表面處理針對可交聯材料的相同溶液增強固化後電介質層12b的表面的潤濕性。此表面處理可例如涉及至少在固化後電介質層12b的區域上方使工件暴露於等離子體(例如氬等離子體)，或至少在固化後電介質層的區域上方使工件暴露於來自UV燈的紫外(UV)輻射(例如約254nm處的UV或約185nm處的UV臭氧)。在此實例中，工件經受額外烘焙以完成固化工藝。
在經過固化和表面處理的電介質層12c不進行任何中間圖案化的情況下(即，在上面沉積可固化材料的溶液的整個區域上方保持第一柵極電介質層的情況下)，在不沉積任何介入層的情況下，在上面沉積可交聯材料的第一受控量的溶液的工件的相同區域上方大體上均勻地沉積第二受控量的完全相同的可交聯材料溶液，以在經過固化和表面處理的電介質層12c上直接形成連續層14a。所述沉積條件和沉積技術對於沉積第一受控量的可交聯材料溶液是相同的；例如可使用相同旋塗技術。
所得工件經受烘焙工藝以移除溶劑，且接著至少在連續層14a的區域上方(以及從工件的上面形成連續層14a的一側)暴露於引起可交聯材料的交聯的一個或多個波長處的固化輻射(例如紫外(UV)輻射)。在此實例中，工件再次經受額外烘焙以完成固化工藝。
緊接在固化之後，所得固化後的電介質層14b佔據由下層的經過固化和表面處理的電介質層12c佔據的大體上所有區；大體上不存在工件的由兩個柵極電介質層12c、14b中的僅一個佔據的區。所述技術不排除在第二固化操作之後使所述兩個柵極電介質層12c、14b中的一個或兩個圖案化，但在形成上部柵極電介質層之前不進行下部柵極電介質層的圖案化。
在此實例中，導體材料通過例如比如濺鍍等氣相沉積技術大體上均勻地沉積在包含上部固化後柵極電介質層14b的所得工件的上部工作表面上方，以形成連續層。使導體材料的連續層圖案化(通過例如使用臨時抗蝕劑的光刻技術)以限定提供用於所述一個或多個電晶體的柵極電極的一個或多個柵極導體16。根據另一實例，通過印刷技術形成柵極導體圖案。
在上文所提及的產生電晶體的有源矩陣陣列的實例中，圖案化導體層限定柵極導體陣列，每一柵極導體提供用於電晶體陣列的電晶體的相應列的柵極電極，且每一柵極導體延伸超出電晶體陣列。每一漏極導體(其可例如在堆疊內的較高層級處形成像素電極或以導電方式連接到相應像素電極)與柵極導體和源極導體的相應唯一組合相關聯，且可經由柵極導體和源極導體的在電晶體陣列外部的部分獨立地定址。如上文所提及，此技術同等地適用於形成例如用於邏輯電路的電晶體等具有其它功能的電晶體，其中電接觸件可(或可不)在包含電晶體的電路區域內。
參考圖7和8：在一個批量生產實例中，上面形成兩個上部柵極電介質層12c、14b的工件包含大面積單元40(包括大面積塑膠支撐片)，其稍後被切割(連同單元40上原位形成的層一起)以產生具有小於大面積單元40的對應尺寸(例如寬度)的尺寸(例如寬度)D1、D2的多個裝置。大面積單元40包含限定用於所述多個裝置中的每一個的上文提及的源極-漏極導體圖案的導體圖案，且上文提及的半導體溝道材料8a的連續層在如上文所描述的圖案化之前在大面積單元的大體上整個區域上方連續地延伸。此批量生產技術涉及在大面積單元40的整個區域上方大體上均勻地兩次沉積(在相同條件下且通過相同沉積技術)上文提及的可交聯材料的受控量的溶液，且在所述兩次沉積之間進行中間固化和表面處理；且在第二固化操作之後，所得兩個柵極電介質層12b、14b各自佔據大面積單元40的大體上整個區域。如上文所提及，所述技術並不排除兩個柵極電介質層12c、14b中的一個或兩個的後續圖案化；且可採用此稍後圖案化來例如向下形成到漏極導體6的通孔以促進漏極導體6和稍後階段處形成的相應像素電極之間的導電連接。
本申請的發明人已發現，與其它方面相同的技術相比，上文所描述的技術實現具有較好良率的生產工藝，在所述其它方面相同的技術中，具有相同組成的兩個柵極電介質層12c、14b被單個上部柵極電介質層代替，所述單個上部柵極電介質層具有與兩個上部柵極電介質層10b、12c相同的組成且具有與兩個上部柵極電介質層12c、14b的組合厚度大體上相同的厚度。本申請的發明人將此良率改進歸於兩個因素：(i)可交聯材料的較好交聯；以及(ii)柵極電介質中的針孔對半導體和柵極電極之間的漏電流的影響減小。對於後者，本申請的發明人認為，兩個柵極電介質層的下部柵極電介質層的上部表面的上文所描述的表面處理具有以下效果：較好地防止兩個柵極電介質層的下部柵極電介質層中的針孔(由溶液沉積工藝產生)傳播到兩個柵極電介質層的上部柵極電介質層中並穿過所述上部柵極電介質層。
還可在經由除照射技術以外的技術(例如涉及通過熱傳導加熱工件的熱固化技術)執行固化時，在某一程度上實現上文提及的交聯的改進。
通過上文描述的技術產生的電子裝置(例如，電晶體、電晶體陣列和/或電容器)可在例如顯示裝置、感測器裝置和邏輯電路等多種多樣的裝置中使用。
除了上文明確提及的任何修改之外，所屬領域的技術人員還將清楚，可以在本發明的範圍內對所描述的實施例進行各種其它修改。
申請人在此單獨公開本文描述的每一個個別特徵及兩個或更多個此類特徵的任意組合，以所屬領域的技術人員的普通知識，能夠總體上基於本說明書實行此類特徵或組合，而不考慮此類特徵或特徵的組合是否能解決本文所公開的任何問題；且不對申請專利範圍的範圍造成限制。申請人指示本發明的各方面可由任何此類個別特徵或特徵的組合構成。
2:支撐元件 4:源極電極 6:漏極電極 8a:圖案化層；連續層 8b:圖案化層；圖案化半導體 10a、12a、14a:連續層 10b:掩模；電介質層 12b、12c、14b:電介質層 16:柵極導體 40:工件；大面積單元 D1、D2:寬度
在下文中僅以示例的方式並參考附圖詳細地描述本發明的實施例，附圖中： 圖1和2示出在根據本發明的第一實施例的實例工藝之前的半導體圖案化步驟； 圖3示出在根據本發明的第一實施例的實例工藝中的固化柵極電介質層的形成； 圖4示出在根據本發明的第一實施例的實例工藝中的固化柵極電介質層的表面處理步驟； 圖5示出在根據本發明的第一實施例的實例工藝中的固化第二柵極電介質層的形成； 圖6示出來自根據本發明的第一實施例的實例工藝的第二柵極電介質層上方的柵極導體的形成；以及 圖7和8示出根據第一實施例的實例工藝在批量生產技術中的使用。
2:支撐元件
4:源極電極
6:漏極電極
8a:圖案化層；連續層
10a:連續層

Claims (13)

  1. 一種形成限定一個或多個電子裝置的層的堆疊的方法，其特徵在於：所述方法包括：在工件的區域上方沉積第一厚度的可固化、電介質或電介質前驅體材料；隨後至少在所述工件的所述區域上方使所述工件暴露於固化條件；以及在無任何中間圖案化操作的情況下，隨後在所述工件的所述區域上方沉積第二厚度的所述可固化材料；以及隨後至少在所述工件的所述區域上方使所述工件再次暴露於固化條件。
  2. 如請求項1所述的方法，其中所述一個或多個電子裝置包含一個或多個電晶體，且所述電介質或電介質前驅體材料是柵極電介質或柵極電介質前驅體材料。
  3. 如請求項1或2所述的方法，其中使所述工件暴露於固化條件包括至少在所述工件的所述區域上方使所述工件暴露於固化輻射。
  4. 如請求項1至3中任一項所述的方法，其中所述第一和第二厚度大體上相等。
  5. 如請求項3所述的方法，其中所述可固化材料為可交聯材料，且所述固化輻射處於引起所述可交聯材料的交聯的一個或多個波長處。
  6. 如請求項1至5中任一項所述的方法，其中包括：在所述第一固化之後且在沉積所述第二厚度的所述可固化材料之前，至少在所述工件的所述區域上方使所述工件經歷表面處理。
  7. 如請求項6所述的方法，其中沉積所述第二厚度的可固化材料包括形成所述可固化材料的溶液的膜；且所述表面處理在所述工件的所述區域上方針對所述可固化材料的所述溶液增加所述工件的表面的潤濕性。
  8. 如請求項7所述的方法，其中所述表面處理包括至少在所述工件的所述區域上方使所述工件暴露於等離子體或來自紫外燈的紫外輻射。
  9. 如請求項1至8中任一項所述的方法，其中在沉積所述第一厚度的可固化材料之前，所述工件包含提供用於所述一個或多個電晶體的半導體溝道的半導體溝道材料層。
  10. 如請求項9所述的方法，其中所述半導體溝道材料層為圖案化層，且其中形成所述圖案化半導體溝道材料層包括經由電介質層使一層半導體溝道材料圖案化；且其中所述方法包括在所述電介質層上沉積所述第一厚度的所述可固化材料。
  11. 一種形成限定一個或多個電子裝置的層的堆疊的方法，其特徵在於：所述方法包括：在工件上在所述工件的區域上方沉積電介質材料或電介質前驅體材料的受控量的溶液，以及隨後在所述工件上在所述工件的所述區域上方沉積電介質材料或電介質前驅體材料的第二受控量的所述溶液；其中在沉積電介質材料或電介質前驅體材料的所述第二受控量的所述溶液之前，使所述工件經歷表面處理以便在所述工件的所述區域上方針對柵極電介質材料或柵極電介質前驅體材料的所述溶液增加所述工件的表面的潤濕性。
  12. 如請求項1所述的方法，其中所述一個或多個電子裝置包含一個或多個電晶體，且所述電介質或電介質前驅體材料是柵極電介質或柵極電介質前驅體材料。
  13. 如請求項11或12所述的方法，其中所述表面處理包括使所述工件暴露於等離子體或來自紫外燈的紫外輻射。
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