TW202025288A - Plasma processing device to suppress the unstable discharge - Google Patents

Plasma processing device to suppress the unstable discharge Download PDF

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TW202025288A
TW202025288A TW108139432A TW108139432A TW202025288A TW 202025288 A TW202025288 A TW 202025288A TW 108139432 A TW108139432 A TW 108139432A TW 108139432 A TW108139432 A TW 108139432A TW 202025288 A TW202025288 A TW 202025288A
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plasma processing
mounting table
exhaust
exhaust port
processing device
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TWI812801B (en
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佐藤亮
山科井作
笠原稔大
本浩貴
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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Abstract

To provide technology to suppress the unstable discharge. The plasma processing device has: a processing chamber, in which a mounting table for mounting a substrate is provided, and plasma processing of the substrate is performed; a high-frequency power supply to apply the high-frequency power for biasing the mounting table; and a plurality of plate-shaped members formed of conductive materials, connected to the ground potential, and arranged on the inner surface of the processing chamber.

Description

電漿處理裝置Plasma processing device

本揭示關於電漿處理裝置。This disclosure relates to plasma processing equipment.

專利文獻1揭示之電漿處理裝置，係在用於載置基板的載置台之周圍，以將進行電漿處理的處理區域與連結於排氣系統的排氣區域隔開的方式，設置有由導電性材料形成且設為接地電位的複數個隔開構件。 [先前技術文獻] [專利文獻]The plasma processing apparatus disclosed in Patent Document 1 is located around a mounting table on which a substrate is placed. The processing area for plasma processing is separated from the exhaust area connected to the exhaust system. A plurality of partition members formed of conductive material and set to ground potential. [Prior Technical Literature] [Patent Literature]

[專利文獻1]特開2015-216260號公報[Patent Document 1] JP 2015-216260 A

[發明所欲解決之課題][The problem to be solved by the invention]

本揭示提供抑制不穩定的放電之技術。 [用以解決課題的手段]The present disclosure provides techniques for suppressing unstable discharge. [Means to solve the problem]

本揭示之一態樣的電漿處理裝置，係具有：處理室；高頻電源；及複數個板狀構件。處理室，係於內部設置有用於載置基板的載置台，且實施對基板之電漿處理。高頻電源，係對載置台施加偏壓用之高頻電力。複數個板狀構件，係由導電性材料形成，且連接於接地電位，配置於處理室之內面。 [發明效果]A plasma processing device of one aspect of the present disclosure has: a processing chamber; a high-frequency power supply; and a plurality of plate-shaped members. The processing chamber is equipped with a mounting table for mounting the substrate inside, and performs plasma processing on the substrate. The high-frequency power supply is the high-frequency power used to bias the mounting table. The plurality of plate-shaped members are formed of conductive materials, connected to the ground potential, and arranged on the inner surface of the processing chamber. [Invention Effect]

依據本揭示，可以抑制不穩定的放電。According to the present disclosure, unstable discharge can be suppressed.

以下，參照圖面詳細說明本案揭示的電漿處理裝置之實施形態。又，本實施形態並非用來限定揭示的電漿處理裝置者。Hereinafter, an embodiment of the plasma processing apparatus disclosed in this application will be described in detail with reference to the drawings. In addition, this embodiment is not intended to limit the disclosed plasma processing apparatus.

在平板顯示器(FPD)之製造工程中，存在對玻璃基板等之基板進行電漿蝕刻或成膜處理等之電漿處理工程。電漿處理中使用電漿蝕刻裝置或電漿CVD成膜裝置等之各種電漿處理裝置。In the manufacturing process of flat panel displays (FPD), there is a plasma processing process in which substrates such as glass substrates are subjected to plasma etching or film formation processing. Various plasma processing equipment such as plasma etching equipment or plasma CVD film forming equipment are used for plasma processing.

電漿處理裝置中，為了有效地引入電漿中之離子，因此對載置基板的載置台施加高頻偏壓。大型之基板之情況下，電漿處理裝置中，係對載置台施加高電力之高頻偏壓。但是，對載置台施加高電力之高頻電力之情況下，在排氣系統等中會發生不穩定放電之情況。因此，期待抑制不穩定的放電。In the plasma processing device, in order to efficiently introduce ions in the plasma, a high-frequency bias is applied to the mounting table on which the substrate is mounted. In the case of large substrates, in the plasma processing device, high-power high-frequency bias is applied to the mounting table. However, when high-frequency high-frequency power is applied to the mounting table, unstable discharge may occur in the exhaust system, etc. Therefore, it is expected to suppress unstable discharge.

[電漿處理裝置之構成] 首先，對實施形態的電漿處理裝置10之構成進行說明。圖1係表示實施形態的電漿處理裝置之概略構成之一例之垂直剖面圖。本實施形態的電漿處理裝置10，係構成為生成感應耦合電漿，例如對FPD用玻璃基板這樣的矩形之基板進行蝕刻處理或灰化(ashing)處理等之感應耦合電漿處理的感應耦合型之電漿處理裝置。[Constitution of Plasma Processing Device] First, the configuration of the plasma processing apparatus 10 of the embodiment will be described. Fig. 1 is a vertical cross-sectional view showing an example of the schematic configuration of the plasma processing apparatus of the embodiment. The plasma processing apparatus 10 of this embodiment is configured to generate inductively coupled plasma, for example, inductively coupled plasma processing such as etching processing or ashing processing on rectangular substrates such as glass substrates for FPD Type of plasma processing device.

電漿處理裝置10具有由導電性材料例如內壁面實施了陽極氧化處理的鋁形成的角筒形狀之氣密的本體容器1。本體容器1以可以分解方式組裝，藉由接地線1a接地。本體容器1係藉由介質壁2按上下劃分為天線室3與處理室4。介質壁2構成處理室4之天井壁。介質壁2係由Al2 O3 等之陶瓷、石英等構成。The plasma processing apparatus 10 has an airtight main body container 1 in a rectangular tube shape formed of a conductive material such as aluminum whose inner wall surface has been anodized. The main body container 1 is assembled in a decomposable manner, and is grounded by a ground wire 1a. The main body container 1 is divided up and down into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2. The media wall 2 constitutes the patio wall of the processing chamber 4. The dielectric wall 2 is made of ceramics such as Al 2 O 3 , quartz, etc.

於本體容器1中的天線室3之側壁3a與處理室4之側壁4a之間設置有朝內側突出的支撐棚架5。介質壁2載置於支撐棚架5之上。Between the side wall 3a of the antenna chamber 3 and the side wall 4a of the processing chamber 4 in the main container 1 is provided a support shelf 5 protruding inward. The medium wall 2 is placed on the supporting shelf 5.

於介質壁2之下側部分嵌入有處理氣體供給用之噴淋筐體11。噴淋筐體11，係設置成為十字狀，成為對介質壁2由下進行支撐的構造例如樑構造。又，對上述介質壁2進行支撐的噴淋筐體11，係成為藉由複數根吊帶(未圖示)從本體容器1之天井被懸吊的狀態。支撐棚架5及噴淋筐體11可以藉由介質構件披覆。A shower housing 11 for supplying processing gas is embedded in the lower part of the medium wall 2. The shower housing 11 is arranged in a cross shape, and has a structure that supports the medium wall 2 from below, such as a beam structure. In addition, the shower housing 11 supporting the medium wall 2 is in a state of being suspended from the patio of the main body container 1 by a plurality of straps (not shown). The supporting shelf 5 and the spraying box 11 can be covered by a medium member.

噴淋筐體11，係由導電性材料，較好是金屬例如以不產生污染物的方式內面或外面實施了陽極氧化處理的鋁構成。於噴淋筐體11形成有水平延伸的氣體流路12。於氣體流路12連通有朝下方延伸的複數個氣體吐出孔12a。另一方面，於介質壁2之上面中央以與氣體流路12連通的方式設置有氣體供給管20a。氣體供給管20a，係從本體容器1之天井貫穿外側，連接於包含處理氣體供給源及閥系統等處理氣體供給系統20。因此，電漿處理中，從處理氣體供給系統20供給的處理氣體，係經由氣體供給管20a供給至噴淋筐體11之氣體流路12，並從形成於噴淋筐體11之下面的氣體吐出孔12a吐出至處理室4內。The shower housing 11 is made of a conductive material, preferably a metal, such as aluminum whose inner surface or outer surface has been anodized so as not to generate contaminants. A gas flow path 12 extending horizontally is formed in the shower housing 11. A plurality of gas discharge holes 12a extending downward are communicated with the gas flow path 12. On the other hand, a gas supply pipe 20 a is provided in the center of the upper surface of the medium wall 2 so as to communicate with the gas flow path 12. The gas supply pipe 20a penetrates the outside from the patio of the main container 1 and is connected to a processing gas supply system 20 including a processing gas supply source and a valve system. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied to the gas flow path 12 of the shower housing 11 via the gas supply pipe 20a, and from the gas formed under the shower housing 11 The discharge hole 12a discharges into the processing chamber 4.

於天線室3內配設有高頻(RF)天線13。高頻天線13，係將由銅或鋁等之良導電性之金屬形成的天線線13a配置成為環狀或渦卷狀等之習知使用的任意之形狀。高頻天線13為具有複數個天線部的多重天線亦可。A high frequency (RF) antenna 13 is arranged in the antenna room 3. The high-frequency antenna 13 is an antenna wire 13a made of a metal with good conductivity, such as copper or aluminum, arranged in any conventionally used shape such as a loop or a spiral shape. The high-frequency antenna 13 may be a multiple antenna having a plurality of antenna units.

於天線線13a之端子22連接有朝天線室3之上方延伸的供電構件16。於供電構件16之上端透過供電線19連接於高頻電源15。又，於供電線19設置有匹配器14。另外，高頻天線13，係透過由絕緣構件形成的間隔件17而與介質壁2分離。電漿處理時，係從高頻電源15例如將頻率為13.56MHz之高頻電力供給至高頻天線13。藉此，於處理室4內形成感應電場，藉由感應電場使由噴淋筐體11供給的處理氣體電漿化，生成感應耦合電漿。The terminal 22 of the antenna wire 13a is connected to a power feeding member 16 extending upward of the antenna chamber 3. The upper end of the power supply member 16 is connected to a high-frequency power source 15 through a power supply line 19. In addition, a matching device 14 is provided on the power supply line 19. In addition, the high-frequency antenna 13 is separated from the dielectric wall 2 through a spacer 17 formed of an insulating member. In plasma processing, the high-frequency power supply 15 supplies high-frequency power with a frequency of, for example, 13.56 MHz to the high-frequency antenna 13. As a result, an induced electric field is formed in the processing chamber 4, and the processing gas supplied from the shower housing 11 is plasma-formed by the induced electric field to generate inductively coupled plasma.

於處理室4內之底壁4b上隔著介質壁2而與高頻天線13呈對置的方式設置有載置台23，載置台23具有用於載置矩形狀之基板G之載置面23c。載置台23係透過絕緣體構件24被固定。絕緣體構件24呈框狀。載置台23具有由導電性材料例如表面實施了陽極氧化處理的鋁構成的本體23a；及以包圍本體23a之外周的方式設置的絕緣體筐23b。載置於載置台23的基板G係藉由靜電吸盤(未圖示)吸附保持。A mounting table 23 is provided on the bottom wall 4b in the processing chamber 4 to face the high-frequency antenna 13 with the dielectric wall 2 interposed therebetween. The mounting table 23 has a mounting surface 23c for mounting a rectangular substrate G. . The mounting table 23 is fixed through the insulator member 24. The insulator member 24 has a frame shape. The mounting table 23 has a main body 23a made of a conductive material such as aluminum whose surface has been anodized, and an insulator basket 23b provided to surround the outer periphery of the main body 23a. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).

進行基板G之搬出入之升降銷(未圖示)透過本體容器1之底壁4b、絕緣體構件24插通於載置台23中。升降銷，係藉由設置於本體容器1外的升降機構(未圖示)進行升降驅動進行基板G之搬出入。又，載置台23為藉由升降機構可以升降的構造。Lift pins (not shown) for carrying in and out of the substrate G are inserted into the mounting table 23 through the bottom wall 4b of the main body container 1 and the insulator member 24. The lift pins are driven by a lift mechanism (not shown) provided outside the main container 1 to lift and drive the substrate G to carry in and out. In addition, the mounting table 23 has a structure that can be raised and lowered by a lifting mechanism.

載置台23之本體23a係藉由供電線25透過匹配器26連接於偏壓用之高頻電源27。電漿處理中，高頻電源27係將高頻偏壓(偏壓用高頻電力)施加於載置台。高頻偏壓之頻率例如6MHz。處理室4內生成的電漿中之離子，係藉由偏壓用之高頻電力有效地被引入至基板G。The main body 23a of the mounting table 23 is connected to a high-frequency power supply 27 for bias through a matching device 26 through a power supply line 25. In the plasma processing, the high-frequency power supply 27 applies a high-frequency bias (high-frequency power for bias) to the mounting table. The frequency of the high-frequency bias is, for example, 6 MHz. The ions in the plasma generated in the processing chamber 4 are effectively introduced to the substrate G by high-frequency power for bias.

又，於載置台23內，為了對基板G之溫度進行控制，因此設置有由陶瓷加熱器等之加熱手段或冷媒流路等形成的溫度控制機構及溫度感測器(都未圖示)。Moreover, in the mounting table 23, in order to control the temperature of the substrate G, a temperature control mechanism and a temperature sensor (neither shown) formed by heating means such as a ceramic heater or a refrigerant flow path are provided.

另外，載置台23，在載置基板G時，於基板G之背面側形成有冷卻空間(未圖示)。於冷卻空間連接有以規定之壓力供給作為熱傳導用氣體之He氣體之He氣體流路28。如此般，藉由對基板G之背面側供給熱傳導用氣體，在真空下可以使基板G之溫度控制性良好。In addition, the mounting table 23 has a cooling space (not shown) formed on the back side of the substrate G when the substrate G is mounted. A He gas flow path 28 for supplying He gas as a heat conduction gas at a predetermined pressure is connected to the cooling space. In this way, by supplying the heat conduction gas to the back side of the substrate G, the temperature controllability of the substrate G can be improved under vacuum.

於處理室4之底壁4b之底部中央形成有開口部4c。供電線25、He氣體流路28、及溫度控制機構之配管或配線係通過開口部4c導出至本體容器1外。An opening 4c is formed in the center of the bottom of the bottom wall 4b of the processing chamber 4. The power supply line 25, the He gas flow path 28, and the piping or wiring of the temperature control mechanism are led out of the main body container 1 through the opening 4c.

在處理室4之四個側壁4a之中之一個設置有對基板G進行搬出入之搬出入口29a及對其進行開關的閘閥29。One of the four side walls 4a of the processing chamber 4 is provided with a carry-out inlet 29a for carrying in and out of the substrate G and a gate valve 29 for opening and closing it.

於處理室4之底壁4b，於載置台23之側部設置有排氣口30。排氣口30係以成為較載置台23之載置面23c低的位置的方式設置於底壁4b。於排氣口30設置有排氣部40。排氣部40具有：連接於排氣口30的排氣配管31；藉由調整排氣配管31之開度來控制處理室4內之壓力的自動壓力控制閥(APC)32；及使處理室4內透過排氣配管31實施排氣的真空泵33。藉由真空泵33實施處理室4內之排氣，電漿處理中，對自動壓力控制閥(APC)32之開度進行調整而將處理室4內設定、維持於規定之真空氛圍。The bottom wall 4b of the processing chamber 4 is provided with an exhaust port 30 on the side of the mounting table 23. The exhaust port 30 is provided in the bottom wall 4b so as to be a position lower than the mounting surface 23c of the mounting table 23. As shown in FIG. An exhaust portion 40 is provided in the exhaust port 30. The exhaust portion 40 has: an exhaust pipe 31 connected to the exhaust port 30; an automatic pressure control valve (APC) 32 that controls the pressure in the processing chamber 4 by adjusting the opening of the exhaust pipe 31; and makes the processing chamber A vacuum pump 33 for exhausting the inside of 4 through an exhaust pipe 31. The vacuum pump 33 is used to exhaust the processing chamber 4. During plasma processing, the opening of the automatic pressure control valve (APC) 32 is adjusted to set and maintain the processing chamber 4 in a predetermined vacuum atmosphere.

圖2係表示實施形態的處理室內之構成之一例之水平剖面圖。圖2係表示從上方觀察到的處理室4內之載置台23附近的剖面圖。在處理室4內，於中央配置有載置台23。為了載置矩形狀之基板G，載置台23之載置面23c形成為矩形狀。排氣口30係在處理室4之載置台23之周圍形成有複數個。本實施形態中，在矩形狀之載置台23之各邊之兩端附近分別設置有排氣口30。又，排氣口30之數量或位置係依據裝置之大小適當地設定。例如排氣口30沿著處理室4之各側壁4a設置各1個亦可。Fig. 2 is a horizontal sectional view showing an example of the structure of the processing chamber of the embodiment. FIG. 2 is a cross-sectional view of the vicinity of the mounting table 23 in the processing chamber 4 as viewed from above. In the processing chamber 4, a mounting table 23 is arranged in the center. In order to mount the rectangular substrate G, the mounting surface 23c of the mounting table 23 is formed in a rectangular shape. A plurality of exhaust ports 30 are formed around the mounting table 23 of the processing chamber 4. In this embodiment, exhaust ports 30 are respectively provided in the vicinity of both ends of each side of the rectangular mounting table 23. In addition, the number or positions of the exhaust ports 30 are appropriately set according to the size of the device. For example, one exhaust port 30 may be provided along each side wall 4a of the processing chamber 4.

在處理室4之內面(側壁4a之內側部分)與載置台23之間設置有隔開構件50。本實施形態中，係在載置台23之各邊之側面側，以藉由1個隔開構件50覆蓋2個排氣口30的方式設置有4片隔開構件50。如圖1所示，處理室4係藉由隔開構件50隔開為對基板G進行電漿處理的處理區域41，及與排氣口30連結的排氣區域42。處理區域41為處理室4之中較隔開構件50更上方之區域，係形成對基板G進行電漿處理之感應耦合電漿的區域。排氣區域42為處理室4之中較隔開構件50更下方之區域，係導入來自處理區域41之處理氣體，將其實施排氣的區域。A partition member 50 is provided between the inner surface of the processing chamber 4 (the inner part of the side wall 4 a) and the mounting table 23. In the present embodiment, four partition members 50 are provided on the side surface of each side of the mounting table 23 so that two exhaust ports 30 are covered by one partition member 50. As shown in FIG. 1, the processing chamber 4 is partitioned by a partition member 50 into a processing area 41 where the substrate G is subjected to plasma processing, and an exhaust area 42 connected to the exhaust port 30. The processing area 41 is an area above the partition member 50 in the processing chamber 4, and is an area where inductively coupled plasma for plasma processing of the substrate G is formed. The exhaust area 42 is an area below the partition member 50 in the processing chamber 4, and is an area where the processing gas from the processing area 41 is introduced and exhausted.

隔開構件50，係由金屬等之導電性材料形成，形成為不具有開口部的矩形之板材。各隔開構件50，係以上面成為較載置台23之載置面23c低的位置的方式配置於載置台23之各側面。各隔開構件50係藉由接地線50a連接於接地電位。又，將隔開構件50電連接於側壁4a，而透過本體容器1接地亦可。The partition member 50 is formed of a conductive material such as metal, and is formed as a rectangular plate without openings. Each partition member 50 is arranged on each side surface of the mounting table 23 so that the upper surface becomes a position lower than the mounting surface 23c of the mounting table 23. As shown in FIG. Each partition member 50 is connected to the ground potential via a ground wire 50a. In addition, the partition member 50 may be electrically connected to the side wall 4a, and may be grounded through the main body container 1.

鄰接的隔開構件50彼此，係以在其間形成有將供給至處理區域41的氣體導引至排氣區域42之門口60的方式予以分離配置。本實施形態中，門口60係存在於隔開構件50之形成面之四個角。處理室4之處理區域41之氣體係由各門口60流入排氣區域42，從各排氣口30進行排氣。The adjacent partition members 50 are separated from each other so that a door 60 for guiding the gas supplied to the processing area 41 to the exhaust area 42 is formed therebetween. In this embodiment, the door opening 60 is present at the four corners of the forming surface of the partition member 50. The gas system of the treatment area 41 of the treatment chamber 4 flows into the exhaust area 42 from each door opening 60 and exhausts from each exhaust port 30.

於排氣區域42配置有複數個翼片61。圖2中，係在被隔開構件50覆蓋的部分並列配置有複數個翼片61。翼片61係由金屬等之導電性材料形成，形成為矩形之板狀構件。各翼片61，係以排氣口30之上部以外之部分與處理室4之底面(底壁4b)連接，以長邊方向成為與載置台23之側面並行的方向的方式被配置。亦即，各翼片61，於排氣區域42中，係以形成朝向排氣口30之排氣之氣流的方式予以配置。各翼片61之間隔設為10~200mm為較佳。各翼片61係藉由未圖示之接地構件連接於接地電位。又，將各翼片61之至少一部分電連接於隔開構件50，透過隔開構件50接地亦可。A plurality of fins 61 are arranged in the exhaust area 42. In FIG. 2, a plurality of fins 61 are arranged in parallel on the part covered by the partition member 50. The fin 61 is formed of a conductive material such as metal, and is formed as a rectangular plate-shaped member. Each fin 61 is connected to the bottom surface (bottom wall 4b) of the processing chamber 4 with the part other than the upper part of the exhaust port 30, and is arrange|positioned so that the longitudinal direction may become a direction parallel to the side surface of the mounting table 23. That is, the fins 61 are arranged in the exhaust area 42 to form an air flow of exhaust toward the exhaust port 30. The interval between the fins 61 is preferably 10 to 200 mm. Each fin 61 is connected to the ground potential by a grounding member not shown. In addition, at least a part of each fin 61 is electrically connected to the partition member 50, and the partition member 50 may be grounded.

翼片61與隔開構件50連接亦可。圖3A係表示實施形態的翼片之構成之一例之斜視圖。如圖3A所示，各翼片61於處理室4之底面(底壁4b)係以豎立之狀態被固定，上部與隔開構件50連接。藉此，各翼片61可以透過隔開構件50接地。The fin 61 may be connected to the partition member 50. Fig. 3A is a perspective view showing an example of the structure of the fin of the embodiment. As shown in FIG. 3A, each fin 61 is fixed in an upright state on the bottom surface (bottom wall 4b) of the processing chamber 4, and the upper part is connected to the partition member 50. Thereby, each fin 61 can be grounded through the partition member 50.

又，翼片61與隔開構件50間形成間隙亦可。圖3B係表示實施形態的翼片之另一構成之一例之斜視圖。如圖3B所示，各翼片61係在處理室4之底面(底壁4b)以豎立之狀態被固定，上部不與隔開構件50連接，具有間隙。隔開構件50之上面暴露於電漿中，因此基於電漿之條件而會有成為高溫的情況。另一方面，翼片61被隔開構件50覆蓋而不暴露於電漿中，因此不會如隔開構件50般高溫。藉由不將翼片61與隔開構件50連接而予以分離，則即使隔開構件50成為高溫之情況下亦可以抑制隔開構件50與翼片61之熱膨脹之差異引起的變形。In addition, a gap may be formed between the fin 61 and the partition member 50. Fig. 3B is a perspective view showing an example of another configuration of the fin of the embodiment. As shown in FIG. 3B, each fin 61 is fixed in an upright state on the bottom surface (bottom wall 4b) of the processing chamber 4, and the upper part is not connected to the partition member 50, and has a gap. The upper surface of the partition member 50 is exposed to plasma, and therefore may become high temperature based on the conditions of the plasma. On the other hand, the fin 61 is covered by the partition member 50 and is not exposed to the plasma, so it is not as high as the partition member 50. By not connecting and separating the fin 61 and the partition member 50, even when the partition member 50 becomes high temperature, the deformation due to the difference in thermal expansion between the partition member 50 and the fin 61 can be suppressed.

回至圖1。於排氣口30分別設置有排氣網部70。圖4A係表示實施形態的排氣網部之構成之一例之斜視圖。圖4B係表示實施形態的排氣網部之構成之一例之剖面圖。排氣網部70係具有框架71。框架71具有與排氣口30對應之尺寸之開口，可以安裝於排氣口30。於框架71之開口設置有第1開口擋板72。又，於框架71，以與第1開口擋板72重疊的方式隔開間隔設置有第2開口擋板73及第3開口擋板74。亦即，於排氣網部70係在上下設置有三段之開口擋板。第1開口擋板72、第2開口擋板73及第3開口擋板74，係由金屬等之導電性材料形成，具有多數之開口。例如第1開口擋板72、第2開口擋板73及第3開口擋板74，係由形成有多數狹縫的構件或網孔構件、具有多數沖孔的構件形成。Go back to Figure 1. An exhaust net portion 70 is respectively provided in the exhaust port 30. Fig. 4A is a perspective view showing an example of the structure of the exhaust net portion of the embodiment. Fig. 4B is a cross-sectional view showing an example of the structure of the exhaust net portion of the embodiment. The exhaust net portion 70 has a frame 71. The frame 71 has an opening corresponding to the size of the exhaust port 30 and can be installed in the exhaust port 30. A first opening shutter 72 is provided in the opening of the frame 71. In addition, the frame 71 is provided with a second opening shutter 73 and a third opening shutter 74 at intervals so as to overlap with the first opening shutter 72. In other words, the exhaust net portion 70 is provided with three-stage opening baffles up and down. The first opening baffle 72, the second opening baffle 73, and the third opening baffle 74 are formed of a conductive material such as metal and have a large number of openings. For example, the first opening shutter 72, the second opening shutter 73, and the third opening shutter 74 are formed of a member having many slits, a mesh member, or a member having many punching holes.

第1開口擋板72安裝於框架71之開口，藉由未圖示之接地構件被接地。另一方面，第2開口擋板73及第3開口擋板74，係透過絕緣性之絕緣構件75，且以與第1開口擋板72重疊的方式安裝於框架71。第2開口擋板73及第3開口擋板74成為電性浮動狀態。彼等三段之開口擋板彼此以可以穩定放電的隔開被配置。第1開口擋板72與第2開口擋板73之間隔及第1開口擋板72與第2開口擋板73之間隔之較佳範圍為1~20mm。The first opening baffle 72 is attached to the opening of the frame 71, and is grounded by a grounding member (not shown). On the other hand, the second opening baffle 73 and the third opening baffle 74 pass through the insulating insulating member 75 and are attached to the frame 71 so as to overlap the first opening baffle 72. The second opening shutter 73 and the third opening shutter 74 are in an electrically floating state. The opening baffles of these three sections are arranged to be separated from each other for stable discharge. The preferable range of the interval between the first opening baffle 72 and the second opening baffle 73 and the distance between the first opening baffle 72 and the second opening baffle 73 is 1-20 mm.

回至圖1。實施形態的電漿處理裝置10具有由微處理器(電腦)構成的控制部100、使用者介面101及記憶部102。控制部100對電漿處理裝置10之各構成部例如閥、高頻電源、真空泵等送出指令，對彼等進行控制。又，使用者介面101具有操作員為了管理電漿處理裝置10而進行指令輸入等之輸入操作的鍵盤或使電漿處理裝置10之運轉狀況可視化而予以顯示的顯示器等。使用者介面101連接於控制部100。記憶部102記憶有在控制部100之控制下實現電漿處理裝置10所執行的各種處理之控制程式，或對應於處理條件而於電漿處理裝置10之各構成部執行處理之程式亦即處理配方。記憶部102連接於控制部100。處理配方記憶於記憶部102之中之記憶媒體。記憶媒體可以是內建於電腦的硬碟或半導體記憶體，亦可以是CDROM、DVD、快閃記憶體等之可攜性者。又，從其他之裝置例如透過専用線路適當地傳送配方亦可。必要時，依據來自使用者介面101之指示等而從記憶部102呼叫任意之處理配方使控制部100執行，並在控制部100之控制下，進行電漿處理裝置10中之期待之處理。Go back to Figure 1. The plasma processing apparatus 10 of the embodiment has a control unit 100, a user interface 101, and a memory unit 102 composed of a microprocessor (computer). The control unit 100 sends commands to various components of the plasma processing apparatus 10, such as valves, high-frequency power supplies, and vacuum pumps, to control them. In addition, the user interface 101 has a keyboard for the operator to perform input operations such as command input in order to manage the plasma processing apparatus 10, a display for visualizing and displaying the operating conditions of the plasma processing apparatus 10, and the like. The user interface 101 is connected to the control unit 100. The memory unit 102 stores control programs that implement various processes performed by the plasma processing device 10 under the control of the control unit 100, or programs that perform processing in each component of the plasma processing device 10 according to processing conditions, that is, processing formula. The storage unit 102 is connected to the control unit 100. The processing formula is stored in the storage medium in the storage unit 102. The storage medium can be a hard disk or semiconductor memory built into the computer, or it can be a portable CDROM, DVD, flash memory, etc. In addition, the recipe may be appropriately transmitted from other devices, for example, through a dedicated line. When necessary, according to instructions from the user interface 101, an arbitrary processing recipe is called from the storage unit 102 to execute the control unit 100, and under the control of the control unit 100, the desired processing in the plasma processing apparatus 10 is performed.

接著，對使用以上構成之電漿處理裝置10對基板G實施電漿處理例如電漿蝕刻或電漿灰化時的處理動作進行說明。Next, the processing operation when performing plasma processing, such as plasma etching or plasma ashing, on the substrate G using the plasma processing apparatus 10 configured as above will be described.

首先，電漿處理裝置10將閘閥29設為開放之狀態。基板G藉由搬送機構(未圖示)從搬出入口29a被搬入處理室4內，載置於載置台23之載置面23c。電漿處理裝置10係藉由靜電吸盤(未圖示)將基板G固定於載置台23上。接著，電漿處理裝置10從處理氣體供給系統20經由噴淋筐體11之氣體吐出孔12a將處理氣體供給至處理室4內。又，電漿處理裝置10，係藉由自動壓力控制閥(APC)32控制壓力之同時，藉由真空泵33從排氣口30經由排氣配管31對處理室4內實施真空排氣，藉此，將處理室內例如維持於0.66~26.6Pa左右之壓力氛圍。First, the plasma processing apparatus 10 sets the gate valve 29 to an open state. The substrate G is carried into the processing chamber 4 from the carry-out entrance 29 a by a carrying mechanism (not shown), and is placed on the placing surface 23 c of the placing table 23. The plasma processing apparatus 10 fixes the substrate G on the mounting table 23 by an electrostatic chuck (not shown). Next, the plasma processing apparatus 10 supplies the processing gas into the processing chamber 4 from the processing gas supply system 20 through the gas discharge hole 12 a of the shower housing 11. In addition, the plasma processing apparatus 10 controls the pressure by the automatic pressure control valve (APC) 32, and vacuum exhausts the processing chamber 4 from the exhaust port 30 through the exhaust pipe 31 by the vacuum pump 33, thereby , Maintain a pressure atmosphere of about 0.66~26.6Pa in the processing chamber, for example.

又，此時，為了迴避基板G之溫度上升或溫度變化，因此電漿處理裝置10經由He氣體流路28對基板G之背面側之冷卻空間供給作為熱傳導用氣體之He氣體。At this time, in order to avoid temperature rise or temperature change of the substrate G, the plasma processing apparatus 10 supplies He gas as a heat conduction gas to the cooling space on the back side of the substrate G via the He gas flow path 28.

接著，電漿處理裝置10從高頻電源15例如將13.56MHz之高頻施加於高頻天線13，藉此，透過介質壁2而在處理室4內形成均勻的感應電場。藉由這樣形成的感應電場，在處理室4內使處理氣體電漿化，生成高密度之感應耦合電漿。藉由該電漿對基板G進行電漿處理，例如對基板G之規定之膜進行電漿蝕刻或電漿灰化。此時同時，電漿處理裝置10係從高頻電源27將作為高頻偏壓之例如頻率為6MHz之高頻電力施加於載置台23，使處理室4內生成的電漿中之離子有效地被引入至基板G。Next, the plasma processing apparatus 10 applies a high frequency of, for example, 13.56 MHz from the high frequency power supply 15 to the high frequency antenna 13 to thereby form a uniform induced electric field in the processing chamber 4 through the dielectric wall 2. By the induced electric field formed in this way, the processing gas is plasma-formed in the processing chamber 4 to generate high-density inductively coupled plasma. The substrate G is subjected to plasma processing by the plasma, for example, plasma etching or plasma ashing is performed on a predetermined film of the substrate G. At the same time, the plasma processing device 10 applies high-frequency power, such as a high-frequency bias voltage, for example, a frequency of 6 MHz to the mounting table 23 from the high-frequency power supply 27, so that the ions in the plasma generated in the processing chamber 4 are effectively It is introduced to the substrate G.

處理氣體，係於處理室4內之處理區域41電漿化而被供作為電漿處理之後，藉由真空泵33進行吸引，而從形成於鄰接的隔開構件50之間之門口60到達排氣區域42，從排氣口30經由排氣配管31進行排氣。The processing gas is plasmaized in the processing area 41 in the processing chamber 4 and supplied as a plasma treatment, and is sucked by the vacuum pump 33 to reach the exhaust gas from the door 60 formed between the adjacent partition members 50 In the area 42, exhaust is performed from the exhaust port 30 through the exhaust pipe 31.

於此，隨著基板G越大型化，電漿處理裝置10需要對載置台23施加高電力之高頻電力。但是，電漿處理裝置10對載置台23施加高電力之高頻電力時，會產生電弧放電或成為電性不穩定。例如基板G之尺寸為第8世代之尺寸(2160mm×2460mm)以上之尺寸時，電漿處理裝置10需要對載置台23施加更高電力之高頻電力。但是，電漿處理裝置10中，隨著可以處理的基板G之尺寸變為越大，作為對置電極而發揮功能的處理室4之內面(側壁4a之內側部分)之面積相對於基板G的載置台23之面積的比率降低。結果，電漿處理裝置10中，隨著可以處理的基板G之尺寸變為越大，對於對置電極的返回電流密度增加，變為容易產生電弧放電等之電性不穩定。Here, as the substrate G becomes larger, the plasma processing apparatus 10 needs to apply high-frequency high-frequency power to the mounting table 23. However, when the plasma processing apparatus 10 applies high-frequency high-frequency power to the mounting table 23, arc discharge may occur or become electrically unstable. For example, when the size of the substrate G is larger than the size of the 8th generation (2160 mm×2460 mm), the plasma processing apparatus 10 needs to apply high-frequency power of higher power to the mounting table 23. However, in the plasma processing apparatus 10, as the size of the substrate G that can be processed becomes larger, the area of the inner surface (the inner part of the side wall 4a) of the processing chamber 4 that functions as a counter electrode is relative to that of the substrate G The ratio of the area of the mounting table 23 is reduced. As a result, in the plasma processing apparatus 10, as the size of the substrate G that can be processed becomes larger, the return current density to the counter electrode increases, and electrical instability such as arc discharge is likely to occur.

於此，實施形態的電漿處理裝置10中，係在處理室4之內壁與載置台23之間之位置設置有作為接地電位的複數量個翼片61或隔開構件50。圖5係示意表示處理室內之電性狀態之一例之圖。翼片61及隔開構件50係設為接地電位，藉此，作為相對於施加有高頻偏壓的對載置台23之對置電極而發揮功能。亦即，電漿處理裝置10係藉由配置翼片61及隔開構件50來擴大對置電極之面積。例如以使對置電極之面積相對於載置台23之面積成為能夠抑制電弧放電之產生的規定倍數(例如3倍)以上的方式來配置翼片61，將對置電極之面積予以擴大。藉此，電漿處理裝置10中，即使伴隨著基板G之大型化而使載置台23大型化之情況下，亦可以確保電氣穩定性，可以抑制不穩定的放電。Here, in the plasma processing apparatus 10 of the embodiment, a plurality of fins 61 or partition members 50 as a ground potential are provided between the inner wall of the processing chamber 4 and the mounting table 23. Fig. 5 is a diagram schematically showing an example of the electrical state in the processing chamber. The fin 61 and the partition member 50 are set to a ground potential, and thereby function as a counter electrode with respect to the counter mounting table 23 to which a high-frequency bias is applied. That is, the plasma processing apparatus 10 expands the area of the opposed electrode by arranging the fin 61 and the partition member 50. For example, the fins 61 are arranged such that the area of the counter electrode relative to the area of the mounting table 23 becomes a predetermined multiple (for example, 3 times) or more capable of suppressing the occurrence of arc discharge, and the area of the counter electrode is enlarged. Thereby, in the plasma processing apparatus 10, even when the mounting table 23 is enlarged with the enlargement of the substrate G, electrical stability can be ensured, and unstable discharge can be suppressed.

又，翼片61係並列配置於朝向排氣口30之排氣之氣流之上游側。藉此，電漿化之氣體朝向排氣口30流動時，接觸氣體翼片61而失活。藉此，可以抑制電漿化之氣體流入排氣口30而在排氣部40之內部產生不穩定的放電。In addition, the fins 61 are arranged side by side on the upstream side of the air flow of the exhaust toward the exhaust port 30. Thereby, when the plasmaized gas flows toward the exhaust port 30, it contacts the gas fin 61 and is deactivated. As a result, it is possible to prevent the plasmaized gas from flowing into the exhaust port 30 and generating an unstable discharge in the exhaust portion 40.

又，圖2之例中說明將翼片61僅配置於被隔開構件50覆蓋的部分之情況之例，但翼片61之配置不限定於此。欲使翼片61有助於對置電極之擴大之情況下，可以配置於處理室4之內面，設置於任意位置均可。例如將翼片61設置於側壁4a亦可。又，為了抑制附著之沈積等之副生成物掉落至載置台23之載置面23c，因此翼片61配置於較載置台23之載置面23c低的位置為較佳。In addition, in the example of FIG. 2, an example of the case where the fin 61 is arranged only in the part covered by the partition member 50 is described, but the arrangement of the fin 61 is not limited to this. If the fin 61 is intended to contribute to the expansion of the counter electrode, it can be arranged on the inner surface of the processing chamber 4 and can be arranged at any position. For example, the fin 61 may be provided on the side wall 4a. In addition, in order to prevent by-products such as attached deposits from falling onto the mounting surface 23c of the mounting table 23, the fin 61 is preferably arranged at a position lower than the mounting surface 23c of the mounting table 23.

又，翼片61使流向排氣口30的電漿化之氣體失活之情況下，針對排氣口30之排氣之氣流至少配置在比排氣口30更上游側即可。又，翼片61配置於與門口60對應之部分亦可。圖6A係表示翼片之配置之另一例之圖。圖6A之情況下，翼片61以包圍載置台23之周圍的方式並列配置亦可。藉此，對置電極之面積可以更擴大。又，翼片61至少配置在從門口60與排氣口30之間對應之部分亦可。又，在排氣區域42中相較於與排氣口30對應之區域而在排氣口30以外之區域(在底壁4b未設置有排氣口30之區域)配置更多翼片61亦可。圖6B係表示翼片之配置之另一例之圖。圖6B之情況下，翼片61之數量，相較於排氣口30而在排氣口30之間之部分配置更多數量之翼片61。藉由減少與排氣口30之上方對應之部分之翼片61之數量，可以使朝向排氣口30之排氣之氣流順暢。又，翼片61僅配置於排氣口30為止之排氣之氣流之上游側亦可。圖6C係表示翼片之配置之另一例之圖。圖6C之情況下，翼片61配置於排氣口30與門口60之間。In addition, when the fin 61 deactivates the plasma gas flowing to the exhaust port 30, the air flow of the exhaust gas to the exhaust port 30 may be arranged at least on the upstream side of the exhaust port 30. In addition, the fin 61 may be arranged at a portion corresponding to the doorway 60. Fig. 6A is a diagram showing another example of the arrangement of fins. In the case of FIG. 6A, the wings 61 may be arranged side by side so as to surround the periphery of the mounting table 23. Thereby, the area of the counter electrode can be enlarged. In addition, the fin 61 may be arranged at least in a corresponding portion between the door opening 60 and the exhaust port 30. In addition, in the exhaust area 42, more fins 61 are arranged in the area other than the exhaust port 30 (the area where the exhaust port 30 is not provided on the bottom wall 4b) than the area corresponding to the exhaust port 30. can. Fig. 6B is a diagram showing another example of the arrangement of fins. In the case of FIG. 6B, the number of fins 61 is greater than that of the exhaust ports 30, and a larger number of fins 61 are arranged between the exhaust ports 30. By reducing the number of fins 61 corresponding to the upper portion of the exhaust port 30, the air flow of the exhaust toward the exhaust port 30 can be made smooth. In addition, the fin 61 may be arranged only on the upstream side of the airflow of the exhaust gas to the exhaust port 30. Fig. 6C is a diagram showing another example of the arrangement of the fins. In the case of FIG. 6C, the fin 61 is arranged between the exhaust port 30 and the door opening 60.

又，翼片61曝露於電漿亦可。圖7A~圖7C係表示翼片之配置之另一例之圖。圖7A~圖7C之情況下，隔開構件50係設置於與載置台23之各邊之排氣口30對應之部分。各邊之排氣口30之間之部分未被隔開構件50覆蓋，並列設置有複數個翼片61a。翼片61a未被隔開構件50覆蓋，因此暴露於電漿中。被隔開構件50覆蓋的排氣區域42之一方側(四個角之相反側)係藉由密封板80密封。藉此，來自翼片61a側之排氣未流入排氣口30。另一方面，在排氣區域42之四個角側未被密封，並列設置有複數個翼片61b。處理室4之處理區域41之氣體，係從門口60經由翼片61b之間流入排氣區域42，從各排氣口30進行排氣。該情況下，翼片61a作為相對於載置台23的對置電極而直接發揮功能，因此可以提高對置電極之擴大效果。In addition, the fin 61 may be exposed to plasma. 7A to 7C are diagrams showing another example of the arrangement of the fins. In the case of FIGS. 7A to 7C, the partition member 50 is provided at a portion corresponding to the exhaust port 30 on each side of the mounting table 23. The part between the exhaust ports 30 on each side is not covered by the partition member 50, and a plurality of fins 61a are arranged in parallel. The fin 61a is not covered by the partition member 50 and therefore is exposed to plasma. One side (the side opposite to the four corners) of the exhaust area 42 covered by the partition member 50 is sealed by a sealing plate 80. Thereby, the exhaust gas from the side of the fin 61 a does not flow into the exhaust port 30. On the other hand, the four corner sides of the exhaust area 42 are not sealed, and a plurality of fins 61b are arranged in parallel. The gas in the processing area 41 of the processing chamber 4 flows into the exhaust area 42 from the door opening 60 through between the fins 61 b, and is exhausted from the exhaust ports 30. In this case, the fin 61a directly functions as a counter electrode with respect to the mounting table 23, so that the expansion effect of the counter electrode can be improved.

但是實施形態的電漿處理裝置10中，即使設置複數個翼片61，亦因為處理條件，藉由真空泵33之吸引而使電漿被吸引至排氣口30附近而有侵入排氣部40之內部之情況。因此，電漿處理裝置10中，基於侵入之電漿，例如會有在自動壓力控制閥(APC)32附近產生放電發光(電弧放電)，使其表面之陽極氧化皮膜等被消耗之情況。However, in the plasma processing apparatus 10 of the embodiment, even if a plurality of fins 61 are provided, due to the processing conditions, the plasma is drawn to the vicinity of the exhaust port 30 by the suction of the vacuum pump 33, and some intrusion into the exhaust portion 40 The internal situation. Therefore, in the plasma processing apparatus 10, due to the intrusion of plasma, for example, discharge light (arc discharge) may be generated near the automatic pressure control valve (APC) 32, and the anodic oxide film on the surface may be consumed.

相對於此，例如於排氣口30僅設置接地的第1開口擋板72。圖8A係對僅設置有第1開口擋板之情況下之作用效果進行說明之圖。該情況下，電漿因第1開口擋板72而失活，因此電漿之侵入排氣部40被抑制，可以抑制自動壓力控制閥(APC)32附近之放電引起的發光(電弧放電)。但是，處理室4中若接地電位產生偏差，於其上方區域會產生不穩定的輝光放電，放電來回不斷地閃爍，處理室4內之電漿變為不穩定。In contrast to this, for example, only the first opening shutter 72 that is grounded is provided in the exhaust port 30. Fig. 8A is a diagram illustrating the effect of the case where only the first opening baffle is provided. In this case, the plasma is deactivated by the first opening baffle 72, so the penetration of the plasma into the exhaust portion 40 is suppressed, and light emission (arc discharge) caused by discharge near the automatic pressure control valve (APC) 32 can be suppressed. However, if the ground potential in the processing chamber 4 is deviated, an unstable glow discharge will be generated in the upper area, the discharge will flicker continuously, and the plasma in the processing chamber 4 will become unstable.

又，例如於排氣口30僅設置浮動狀態之第2開口擋板73。圖8B係對僅設置有第2開口擋板之情況下之作用效果進行說明之圖。該情況下，第2開口擋板73為電漿電位，因此於其上方區域不會產生不穩定的輝光放電。但是，浮動狀態之第2開口擋板73中，電漿未失活，因此無法有效防止電漿之侵入排氣部40，無法充分抑制自動壓力控制閥(APC)32之附近之放電引起的發光(電弧放電)。In addition, for example, only the second opening flap 73 in a floating state is provided at the exhaust port 30. Fig. 8B is a diagram for explaining the effect when only the second opening baffle is provided. In this case, the second opening baffle 73 has a plasma potential, so unstable glow discharge does not occur in the upper region. However, in the second opening baffle 73 in the floating state, the plasma is not inactivated, so the plasma cannot be effectively prevented from entering the exhaust portion 40, and the light emission caused by the discharge near the automatic pressure control valve (APC) 32 cannot be sufficiently suppressed. (Arc discharge).

於此，實施形態的電漿處理裝置10中，係在排氣口30設置上下重疊有三段之開口擋板的排氣網部70。圖8C係對實施形態的設置有排氣網部之情況下之作用效果進行說明之圖。實施形態的電漿處理裝置10中，係設置下段側之接地的第1開口擋板72，於其上段側(排氣路徑之上游側)重疊設置浮動狀態之第2開口擋板73及第3開口擋板74重疊設置。亦即，浮動狀態之第2開口擋板73及第3開口擋板74成為電漿電位，與接地的第1擋板之間產生電位差。因此藉由對彼等之開口擋板間之間隔適當地調整而於彼等之間形成穩定的放電將電漿予以保持。透過第2開口擋板73及第3開口擋板74的離子或電子會被電漿捕獲。藉此，推測為在從第3開口擋板74至第1開口擋板72之間形成無閃爍之穩定的輝光放電。又，被吸引至排氣口30的電漿，因下段側之第1開口擋板72而失活，因此可以抑制自動壓力控制閥(APC)32之附近之放電引起的發光(電弧放電)。另外，上段側之第2開口擋板73及第3開口擋板74為電漿電位因此可以緩和處理室4之接地電位之偏差。又，藉由彼等可以在處理室4內生成穩定的電漿。又，藉由重疊設置浮動狀態之第2開口擋板73及第3開口擋板74，使流入的電漿沿著水平方向擴散。因此可以緩和排氣網部70之面內之電漿之局部性集中，可以抑制不穩定的輝光放電，於處理室4內可以生成穩定的電漿。Here, in the plasma processing apparatus 10 of the embodiment, the exhaust port 30 is provided with an exhaust net portion 70 in which three stages of opening baffles are stacked up and down. Fig. 8C is a diagram for explaining the effect of the embodiment when the exhaust net portion is provided. In the plasma processing apparatus 10 of the embodiment, the grounded first opening baffle 72 on the lower side is provided, and the second opening baffle 73 and the third opening in a floating state are overlapped on the upper side (upstream side of the exhaust path). The opening baffles 74 are overlapped. That is, the second opening baffle 73 and the third opening baffle 74 in the floating state become the plasma potential, and a potential difference is generated between the first baffle that is grounded. Therefore, by appropriately adjusting the interval between their opening baffles, a stable discharge is formed between them to maintain the plasma. The ions or electrons passing through the second opening baffle 73 and the third opening baffle 74 are captured by the plasma. As a result, it is estimated that a stable glow discharge without flicker is formed between the third opening baffle 74 and the first opening baffle 72. In addition, the plasma attracted to the exhaust port 30 is deactivated by the first opening flap 72 on the lower stage side, so that light emission (arc discharge) caused by the discharge near the automatic pressure control valve (APC) 32 can be suppressed. In addition, the second opening baffle 73 and the third opening baffle 74 on the upper stage side have a plasma potential, so the deviation of the ground potential of the processing chamber 4 can be alleviated. In addition, they can generate stable plasma in the processing chamber 4. In addition, by overlapping the second opening baffle 73 and the third opening baffle 74 in a floating state, the inflowing plasma is diffused in the horizontal direction. Therefore, the localized concentration of plasma in the surface of the exhaust net portion 70 can be alleviated, unstable glow discharge can be suppressed, and stable plasma can be generated in the processing chamber 4.

如以上般，本實施形態的電漿處理裝置10具有處理室4、高頻電源15、及複數個翼片61。處理室4係在內部設置有用於載置基板G的載置台23，實施對基板G之電漿處理。高頻電源15係對載置台23施加偏壓用之高頻電力。複數個翼片61，係由導電性材料形成，且連接於接地電位，配置於處理室4之內面。藉此，電漿處理裝置10可以抑制不穩定的放電。As described above, the plasma processing apparatus 10 of the present embodiment includes the processing chamber 4, the high-frequency power supply 15, and a plurality of fins 61. The processing chamber 4 is provided with a mounting table 23 for mounting the substrate G inside, and plasma processing of the substrate G is performed. The high-frequency power supply 15 is high-frequency power for applying a bias voltage to the mounting table 23. The plurality of fins 61 are formed of conductive materials, connected to the ground potential, and arranged on the inner surface of the processing chamber 4. Thereby, the plasma processing apparatus 10 can suppress unstable discharge.

又，電漿處理裝置10還具有排氣口30及隔開構件50。排氣口30，設置於載置台23之周圍的比起載置台23之用於載置基板G的載置面23c低的位置，對處理室4內實施排氣。隔開構件50，係由導電性材料形成，且連接於接地電位，以覆蓋排氣口30的方式配置，將處理室4隔開為對基板G進行電漿處理的處理區域41，及與排氣口30連結的排氣區域42。翼片61係至少配置於排氣區域42內的相對於朝向排氣口30之排氣之氣流比起排氣口30之更上游側。藉此，於電漿處理裝置10中，藉由翼片61可以使流向排氣口30的電漿化之氣體失活，因此可以抑制不穩定的放電。In addition, the plasma processing apparatus 10 further has an exhaust port 30 and a partition member 50. The exhaust port 30 is provided around the mounting table 23 at a position lower than the mounting surface 23 c of the mounting table 23 for mounting the substrate G to exhaust the inside of the processing chamber 4. The partition member 50 is formed of a conductive material, is connected to the ground potential, and is arranged to cover the exhaust port 30, partitions the processing chamber 4 into a processing area 41 for plasma processing of the substrate G, and The exhaust area 42 to which the port 30 is connected. The fin 61 is arranged at least in the exhaust region 42 on the upstream side of the exhaust port 30 with respect to the air flow of the exhaust toward the exhaust port 30. Thereby, in the plasma processing apparatus 10, the fin 61 can deactivate the plasma-forming gas flowing to the exhaust port 30, so that unstable discharge can be suppressed.

又，隔開構件50，係在載置台23之周圍，以在鄰接的隔開構件50之間形成有門口60的方式分離配置複數個。翼片61係至少配置於被隔開構件50覆蓋的部分。藉此，電漿處理裝置10中，可以抑制翼片61暴露於電漿中。又，電漿處理裝置10中，藉由配置於被隔開構件50覆蓋的部分之翼片61可以形成朝向排氣口30之排氣之氣流之同時，可以使電漿化之氣體失活。In addition, the partition members 50 are attached to the periphery of the mounting table 23, and a plurality of partition members 50 are separated and arranged so that a door opening 60 is formed between adjacent partition members 50. The fin 61 is arranged at least in the part covered by the partition member 50. Thereby, in the plasma processing apparatus 10, exposure of the fin 61 to the plasma can be suppressed. In addition, in the plasma processing apparatus 10, the fins 61 arranged at the portion covered by the partition member 50 can form an exhaust gas flow toward the exhaust port 30, and can deactivate the plasma gas.

又，隔開構件50，係在載置台23之周圍，以在鄰接的隔開構件50之間形成有門口60的方式分離配置複數個。翼片61係至少配置於從排氣口30至門口60之部分。藉此，電漿處理裝置10中，可以抑制翼片61暴露於電漿中。又，電漿處理裝置10中，藉由配置於從排氣口30至門口60之部分的翼片61可以形成朝向排氣口30之排氣之氣流之同時可以使電漿化之氣體失活。In addition, the partition members 50 are attached to the periphery of the mounting table 23, and a plurality of partition members 50 are separated and arranged so that a door opening 60 is formed between adjacent partition members 50. The fin 61 is arranged at least from the exhaust port 30 to the door opening 60. Thereby, in the plasma processing apparatus 10, exposure of the fin 61 to the plasma can be suppressed. In addition, in the plasma processing apparatus 10, the fins 61 arranged in the portion from the exhaust port 30 to the door opening 60 can form an exhaust gas flow toward the exhaust port 30 and at the same time deactivate the plasma gas. .

又，翼片61係以包圍載置台23之周圍的方式配置。藉此，電漿處理裝置10中，可以增大對置電極之面積，可以確保電氣穩定性。In addition, the fin 61 is arranged so as to surround the periphery of the mounting table 23. Thereby, in the plasma processing apparatus 10, the area of the counter electrode can be increased, and electrical stability can be ensured.

又，隔開構件50，相較於排氣口30係在排氣口30以外配置有更多。藉此，電漿處理裝置10中，可以使朝向排氣口30之排氣之氣流順暢。In addition, the partition member 50 is more arranged outside the exhaust port 30 than the exhaust port 30. Thereby, in the plasma processing apparatus 10, the airflow of the exhaust gas toward the exhaust port 30 can be smoothed.

又，翼片61與隔開構件50被連接。藉此，電漿處理裝置10中，可以經由隔開構件50使翼片61接地。In addition, the fin 61 and the partition member 50 are connected. Thereby, in the plasma processing apparatus 10, the fin 61 can be grounded via the partition member 50.

又，於翼片61與隔開構件50之間形成間隙。藉此，電漿處理裝置10中，可以抑制在隔開構件50與翼片61之間熱膨脹之差異引起的變形。In addition, a gap is formed between the fin 61 and the partition member 50. Thereby, in the plasma processing apparatus 10, the deformation caused by the difference in thermal expansion between the partition member 50 and the fin 61 can be suppressed.

又，翼片61，係在長邊方向與載置台23之側面並行的方向配置有複數個。藉此，電漿處理裝置10中，可以不遮斷排氣之氣流而設置翼片61。In addition, a plurality of fins 61 are arranged in a direction parallel to the side surface of the mounting table 23 in the longitudinal direction. Thereby, in the plasma processing apparatus 10, the fin 61 can be provided without blocking the flow of exhaust gas.

又，翼片61連接於處理室4之底面。藉此，電漿處理裝置10中，翼片61可以配置於垂直方向，可以將多數翼片61以較少的配置空間進行配置，因此藉由較少的配置空間可以增大對置電極之面積。In addition, the fin 61 is connected to the bottom surface of the processing chamber 4. Thereby, in the plasma processing apparatus 10, the fins 61 can be arranged in the vertical direction, and most of the fins 61 can be arranged with less arrangement space. Therefore, the area of the counter electrode can be increased with less arrangement space. .

又，於翼片61之端部，在與載置台23之側面交叉的交叉方向設置有密封板80。藉此，電漿處理裝置10中，可以藉由密封板80對排氣之氣流進行調整。In addition, at the end of the fin 61, a sealing plate 80 is provided in an intersecting direction intersecting the side surface of the mounting table 23. Thereby, in the plasma processing apparatus 10, the air flow of the exhaust gas can be adjusted by the sealing plate 80.

又，於排氣口30，係從排氣路徑之下游朝向上游，設置由導電性材料形成，具有複數個開口的第1開口擋板72、第2開口擋板73及第3開口擋板74。第1開口擋板72被接地。第2開口擋板73及第3開口擋板74設為電性浮動狀態。藉此，電漿處理裝置10中，從第3開口擋板74至第1開口擋板72之間可以產生無閃爍之穩定的輝光放電，於處理室4內可以生成穩定的電漿。Furthermore, at the exhaust port 30, from the downstream to the upstream of the exhaust path, a first opening baffle 72, a second opening baffle 73, and a third opening baffle 74 formed of a conductive material and having a plurality of openings are provided. . The first opening shutter 72 is grounded. The second opening shutter 73 and the third opening shutter 74 are set in an electrically floating state. Thereby, in the plasma processing apparatus 10, a stable glow discharge without flicker can be generated between the third opening baffle 74 to the first opening baffle 72, and stable plasma can be generated in the processing chamber 4.

以上，針對實施形態進行說明，但此次揭示的實施形態全部之點應視為僅為例示並非用來限制者。實際上，上述實施形態可以多樣的形態具體呈現。又，上述實施形態，在不脫離申請專利範圍及其要點之情況下，可以各種形態進行省略、置換、變更。Above, the embodiment has been described, but all the points of the embodiment disclosed this time should be regarded as merely illustrative and not restrictive. In fact, the above-mentioned embodiment can be embodied in various forms. In addition, the above-mentioned embodiments can be omitted, replaced, and changed in various forms without departing from the scope of the patent application and the gist thereof.

例如上述實施形態中說明將翼片61豎立於處理室4之底面(底壁4b)之狀態下進行配置之情況下之例，但不限定於此。翼片61從載置台23之側面及處理室4之側面(側壁4a)垂直地並列設置複數個亦可。該情況下，翼片61以從載置台23之側面及處理室4之側面交替且成為彼此互異的方式進行配置亦可。各翼片61之前端側俯視狀態之情況下重疊亦可。又，翼片61，至少在排氣口30附近，以越接近排氣口30之下側，越減少從載置台23之側面及處理室4之側面起之高度為較佳。圖9係表示翼片之配置之另一例之圖。4個翼片61從載置台23之側面及處理室4之側面交替且成為彼此不同的方式予以配置。上側之2個翼片61之前端側，從上方俯視狀態之情況下呈重疊。又，4個翼片61，越接近排氣口30之下側，從載置台23之側面及處理室4之側面起之高度變為越小。藉此，各翼片61之間之排氣可以順暢地流入排氣口30。如此般，藉由設置翼片61可以抑制電漿被吸引至排氣口30。For example, in the above-mentioned embodiment, an example in the case of arranging the fins 61 upright on the bottom surface (bottom wall 4b) of the processing chamber 4 has been described, but it is not limited to this. A plurality of fins 61 may be vertically juxtaposed from the side surface of the mounting table 23 and the side surface (side wall 4a) of the processing chamber 4. In this case, the fins 61 may be arranged so as to alternate from the side surface of the mounting table 23 and the side surface of the processing chamber 4 and to be mutually different. The front end side of each fin 61 may be overlapped in a plan view state. In addition, the fin 61 is at least in the vicinity of the exhaust port 30, and the closer to the lower side of the exhaust port 30, the lower the height from the side surface of the mounting table 23 and the side surface of the processing chamber 4 is. Fig. 9 is a diagram showing another example of the arrangement of fins. The four fins 61 are arranged alternately and differently from the side surface of the mounting table 23 and the side surface of the processing chamber 4. The front end sides of the two upper fins 61 overlap when viewed from above. In addition, as the four fins 61 are closer to the lower side of the exhaust port 30, the height from the side surface of the mounting table 23 and the side surface of the processing chamber 4 becomes smaller. Thereby, the exhaust gas between the fins 61 can flow into the exhaust port 30 smoothly. In this way, the provision of the fin 61 can prevent the plasma from being attracted to the exhaust port 30.

又，上述實施形態中示出翼片61與載置台23並列配置之情況，但不限定於此。翼片61不與載置台23並列亦可。例如翼片61基於門口60與排氣口30之位置而不與載置台23並列亦可。Moreover, in the above-mentioned embodiment, the case where the fin 61 and the mounting table 23 are arranged side by side is shown, but it is not limited to this. The fin 61 may not be juxtaposed with the mounting table 23. For example, the fin 61 may not be aligned with the mounting table 23 based on the positions of the door opening 60 and the exhaust port 30.

又，上述實施形態中，作為感應耦合型之電漿處理裝置10而示出在處理室之上部透過介質窗(介質壁2)設置有高頻天線之情況，但亦適用於不透過介質窗而透過金屬窗設置高頻天線之情況。該情況下，處理氣體之供給，不從樑構造等之十字狀之噴淋筐體而是在金屬窗設置氣體噴淋進行供給亦可。In addition, in the above-mentioned embodiment, as the inductively coupled plasma processing apparatus 10, a case where a high-frequency antenna is provided on the upper part of the processing chamber through a dielectric window (dielectric wall 2), but it is also applicable to a non-transmitting dielectric window. The high-frequency antenna is installed through the metal window. In this case, the process gas may be supplied not from a cross-shaped shower cabinet such as a beam structure, but a gas shower is installed on a metal window.

另外，上述實施形態中示出將門口60形成於處理室之四個角之例，但不限定於此。In addition, the above-mentioned embodiment shows an example in which the door opening 60 is formed at the four corners of the processing chamber, but it is not limited to this.

另外，上述實施形態中示出排氣網部70適用於排氣機構之孔部分之例，但只要是窗口(viewport)或基板搬出入口等設置於電漿處理裝置10之處理容器的開口即可適用。In addition, the above-mentioned embodiment shows an example in which the exhaust mesh portion 70 is applied to the hole portion of the exhaust mechanism, but it may be an opening provided in the processing container of the plasma processing apparatus 10, such as a viewport or a substrate carry-out entrance. Be applicable.

另外，上述實施形態說明進行電漿蝕刻或電漿灰化之裝置，但亦適用於CVD成膜等之其他之電漿處理裝置10。另外，上述實施形態中示出使用FPD用之矩形基板作為基板的例，但亦適用於處理其他之矩形基板之情況，不限定於矩形例如半導體晶圓等之圓形之基板亦可以適用。In addition, the above-mentioned embodiment described an apparatus for performing plasma etching or plasma ashing, but it is also applicable to other plasma processing apparatuses 10 such as CVD film formation. In addition, the above embodiment shows an example of using a rectangular substrate for FPD as a substrate, but it is also applicable to the case of processing other rectangular substrates, and it is not limited to a rectangular substrate such as a round substrate such as a semiconductor wafer.

1:本體容器 2:介質壁(介質構件) 3:天線室 4:處理室 13:高頻天線 14:匹配器 15:高頻電源 16:供電構件 19:供電線 20:處理氣體供給系統 23:載置台 23c:載置面 27:高頻電源 30:排氣口 31:排氣配管 32:自動壓力控制閥(APC) 33:真空泵 40:排氣部 41:處理區域 42:排氣區域 50:隔開構件 60:門口 61,61a,61b:翼片 70:排氣網部 72:第1開口擋板 73:第2開口擋板 74:第3開口擋板 100:控制部 G:基板1: body container 2: Medium wall (medium member) 3: Antenna room 4: Processing room 13: high frequency antenna 14: matcher 15: High frequency power supply 16: power supply component 19: Power supply line 20: Process gas supply system 23: Mounting table 23c: Mounting surface 27: High frequency power supply 30: exhaust port 31: Exhaust pipe 32: Automatic Pressure Control Valve (APC) 33: Vacuum pump 40: Exhaust 41: Processing area 42: Exhaust area 50: Partitioning member 60: Doorway 61, 61a, 61b: wings 70: Exhaust network department 72: The first opening baffle 73: The second opening baffle 74: 3rd opening baffle 100: Control Department G: substrate

[圖1]圖1係表示實施形態的電漿處理裝置之概略構成之一例之垂直剖面圖。 [圖2]圖2係表示實施形態的處理室內之構成之一例之水平剖面圖。 [圖3A]圖3A係表示實施形態的翼片之構成之一例之斜視圖。 [圖3B]圖3B係表示實施形態的翼片之另一構成之一例之斜視圖。 [圖4A]圖4A係表示實施形態的排氣網部之構成之一例之斜視圖。 [圖4B]圖4B係表示實施形態的排氣網部之構成之一例之剖面圖。 [圖5]圖5係示意表示處理室內之電性的狀態之一例之圖。 [圖6A]圖6A係表示翼片之配置之另一例之圖。 [圖6B]圖6B係表示翼片之配置之另一例之圖。 [圖6C]圖6C係表示翼片之配置之另一例之圖。 [圖7A]圖7A係表示翼片之配置之另一例之圖。 [圖7B]圖7B係表示翼片之配置之另一例之圖。 [圖7C]圖7C係表示翼片之配置之另一例之圖。 [圖8A]圖8A係說明僅設置有第1開口擋板之情況下之作用效果之圖。 [圖8B]圖8B係說明僅設置有第2開口擋板之情況下之作用效果之圖。 [圖8C]圖8C係表示實施形態的設置有排氣網部之情況下之作用效果之圖。 [圖9]圖9係表示翼片之配置之另一例之圖。[Fig. 1] Fig. 1 is a vertical sectional view showing an example of a schematic configuration of a plasma processing apparatus according to an embodiment. [Fig. 2] Fig. 2 is a horizontal sectional view showing an example of the structure of the processing chamber of the embodiment. [Fig. 3A] Fig. 3A is a perspective view showing an example of the structure of the fin of the embodiment. [Fig. 3B] Fig. 3B is a perspective view showing an example of another configuration of the fin of the embodiment. [Fig. 4A] Fig. 4A is a perspective view showing an example of the structure of the exhaust net portion of the embodiment. [Fig. 4B] Fig. 4B is a cross-sectional view showing an example of the configuration of the exhaust net portion of the embodiment. [Fig. 5] Fig. 5 is a diagram schematically showing an example of the electrical state in the processing chamber. [Fig. 6A] Fig. 6A is a diagram showing another example of the arrangement of fins. [Fig. 6B] Fig. 6B is a diagram showing another example of the arrangement of fins. [Fig. 6C] Fig. 6C is a diagram showing another example of the arrangement of fins. [Fig. 7A] Fig. 7A is a diagram showing another example of the arrangement of fins. [Fig. 7B] Fig. 7B is a diagram showing another example of the arrangement of fins. [Fig. 7C] Fig. 7C is a diagram showing another example of the arrangement of the fins. [Fig. 8A] Fig. 8A is a diagram illustrating the effect of the case where only the first opening shutter is provided. [Fig. 8B] Fig. 8B is a diagram illustrating the effect when only the second opening shutter is provided. [Fig. 8C] Fig. 8C is a diagram showing the effect of the embodiment in the case where the exhaust net portion is provided. [Fig. 9] Fig. 9 is a diagram showing another example of the arrangement of the fins.

23:載置台 23: Mounting table

23a:本體 23a: body

23b:絕緣體筐 23b: Insulator basket

30:排氣口 30: exhaust port

33:真空泵 33: Vacuum pump

40:排氣部 40: Exhaust

50:隔開構件 50: Partitioning member

61:翼片 61: Wing

70:排氣網部 70: Exhaust network department

72:第1開口擋板 72: The first opening baffle

73:第2開口擋板 73: The second opening baffle

74:第3開口擋板 74: 3rd opening baffle

G:基板 G: substrate

Claims (12)

一種電漿處理裝置，其特徵為具有： 處理室，係於內部設置有用於載置基板的載置台，且實施對基板之電漿處理； 高頻電源，係對前述載置台施加偏壓用之高頻電力；及 複數個板狀構件，係由導電性材料形成，且連接於接地電位，配置於前述處理室之內面。A plasma processing device, which is characterized by having: The processing chamber is equipped with a mounting table for placing the substrate inside, and performs plasma processing on the substrate; The high-frequency power supply is the high-frequency power used to bias the aforementioned mounting table; and The plurality of plate-shaped members are formed of conductive materials, connected to the ground potential, and arranged on the inner surface of the aforementioned processing chamber. 如請求項1之電漿處理裝置，其中還具有： 排氣口，係設置於前述載置台之周圍的比起前述載置台之載置基板的載置面低的位置，且對前述處理室內實施排氣；及 隔開構件，係由導電性材料形成，且連接於接地電位，以覆蓋前述排氣口的方式配置，用於將前述處理室隔開為對前述基板進行電漿處理的處理區域，和與前述排氣口連結的排氣區域件； 前述板狀構件，係至少配置於前述排氣區域內的相對於朝向前述排氣口之排氣之氣流比起前述排氣口更上游側。Such as the plasma processing device of claim 1, which also has: The exhaust port is provided around the mounting table at a position lower than the mounting surface of the substrate on the mounting table, and exhausts the processing chamber; and The partition member is formed of a conductive material, is connected to the ground potential, is arranged to cover the exhaust port, and is used to partition the processing chamber into a processing area for plasma processing of the substrate, and Exhaust area parts connected with exhaust ports; The plate-shaped member is arranged at least in the exhaust area on the upstream side of the exhaust gas flow toward the exhaust port than the exhaust port. 如請求項2之電漿處理裝置，其中 前述隔開構件，係在前述載置台之周圍，以在鄰接的前述隔開構件之間形成門口的方式分離配置複數個， 前述板狀構件，係至少配置於被前述隔開構件覆蓋的部分。Such as the plasma processing device of claim 2, where The partitioning member is attached to the periphery of the mounting table, and a plurality of partitioning members are separated and arranged to form a doorway between the adjacent partitioning members, The plate-shaped member is arranged at least in a portion covered by the partition member. 如請求項2之電漿處理裝置，其中 前述隔開構件，係在前述載置台之周圍，以在鄰接的前述隔開構件之間形成門口的方式分離配置複數個， 前述板狀構件，係至少配置於從前述排氣口置前述門口之部分。Such as the plasma processing device of claim 2, where The partitioning member is attached to the periphery of the mounting table, and a plurality of partitioning members are separated and arranged to form a doorway between the adjacent partitioning members, The plate-shaped member is arranged at least at a portion of the door opening from the exhaust port. 如請求項2至4中任一項之電漿處理裝置，其中 前述板狀構件，係以包圍前述載置台之周圍的方式配置。Such as the plasma processing device of any one of claims 2 to 4, wherein The plate-shaped member is arranged so as to surround the periphery of the mounting table. 如請求項2至5中任一項之電漿處理裝置，其中 前述板狀構件，相比於前述排氣口係在前述排氣口以外配置有更多。Such as the plasma processing device of any one of claims 2 to 5, wherein The plate-shaped member is arranged more than the exhaust port system outside the exhaust port. 如請求項2至6中任一項之電漿處理裝置，其中 前述板狀構件與前述隔開構件係被連接。Such as the plasma processing device of any one of claims 2 to 6, wherein The aforementioned plate-shaped member and the aforementioned partition member are connected. 如請求項2至6中任一項之電漿處理裝置，其中 於前述板狀構件與前述隔開構件之間形成有間隙。Such as the plasma processing device of any one of claims 2 to 6, wherein A gap is formed between the plate-shaped member and the partition member. 如請求項2至8中任一項之電漿處理裝置，其中 前述板狀構件為長邊方向配置於與前述載置台之側面並行的方向。Such as the plasma processing device of any one of claims 2 to 8, wherein The said plate-shaped member is arrange|positioned in the direction parallel to the side surface of the said mounting base in a longitudinal direction. 如請求項2至9中任一項之電漿處理裝置，其中 前述板狀構件係連接於前述處理室之底面。Such as the plasma processing device of any one of claims 2 to 9, wherein The plate-shaped member is connected to the bottom surface of the processing chamber. 如請求項2至10中任一項之電漿處理裝置，其中 於前述板狀構件之端部，在與前述載置台之側面交叉的交叉方向設置有密封板。Such as the plasma processing device of any one of claims 2 to 10, wherein At the end of the plate-shaped member, a sealing plate is provided in an intersecting direction that intersects the side surface of the mounting table. 如請求項2至11中任一項之電漿處理裝置，其中 於前述排氣口，從排氣路徑之下游朝向上游，配置有由導電性材料形成，且具有複數個開口的第1開口擋板、第2開口擋板及第3開口擋板， 前述第1開口擋板被接地， 前述第2開口擋板及前述第3開口擋板設為電性浮動狀態。Such as the plasma processing device of any one of claims 2 to 11, wherein At the aforementioned exhaust port, from downstream to upstream of the exhaust path, a first opening baffle, a second opening baffle, and a third opening baffle formed of a conductive material and having a plurality of openings are arranged. The aforementioned first opening baffle is grounded, The second opening baffle and the third opening baffle are set in an electrically floating state.
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KR102214790B1 (en) 2021-02-09
TWI812801B (en) 2023-08-21

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