TW202023818A - 積層體及積層體之製造方法 - Google Patents

積層體及積層體之製造方法 Download PDF

Info

Publication number
TW202023818A
TW202023818A TW108131615A TW108131615A TW202023818A TW 202023818 A TW202023818 A TW 202023818A TW 108131615 A TW108131615 A TW 108131615A TW 108131615 A TW108131615 A TW 108131615A TW 202023818 A TW202023818 A TW 202023818A
Authority
TW
Taiwan
Prior art keywords
oxide
laminate
glass plate
laminated body
coating layer
Prior art date
Application number
TW108131615A
Other languages
English (en)
Other versions
TWI716991B (zh
Inventor
山本浩史
赤尾安彦
藤原晃男
今城信彦
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202023818A publication Critical patent/TW202023818A/zh
Application granted granted Critical
Publication of TWI716991B publication Critical patent/TWI716991B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/225—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2456—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/212—TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/281—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/29—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)
  • Glass Compositions (AREA)

Abstract

本發明之積層體係具有玻璃板及被覆層者，且上述被覆層含有選自由氮化矽、氧化鈦、氧化鋁、氧化鈮、氧化鋯、銦錫氧化物、氧化矽、氟化鎂及氟化鈣所組成之群中之1種以上之成分，玻璃板之厚度dg與被覆層之厚度dc之比(dc/dg)為0.05×10-3 ～1.2×10-3 之範圍，上述積層體於自重撓曲修正條件下之曲率半徑r1為10 m～150 m。

Description

積層體及積層體之製造方法
本發明係關於一種積層體及積層體之製造方法，具體而言，係關於一種於半導體封裝之製造步驟中用於支持加工基板之支持玻璃基板。
於晶圓級封裝體(WLP，Wafer Level Package)中，提出有扇出(fan-out)型WLP。已知於扇出型WLP中，為了抑制加工基板之尺寸變化，使用支持加工基板之玻璃基板(專利文獻1)。
然而，於WLP之製造步驟中，如圖1所示，具有：於支持玻璃101積層剝離層102之步驟、於剝離層102設置半導體晶片103後用樹脂104進行密封而製成樹脂模製物之步驟等高溫條件之步驟。有因於該等步驟中產生之熱，而於支持玻璃101、剝離層102、半導體晶片103及樹脂104之積層體產生翹曲之情況。並且，有於支持玻璃101與包含剝離層102、半導體晶片103及樹脂104之加工基板之分離後亦於加工基板直接產生翹曲之情況。
作為翹曲之改善對策，研究出藉由使用翹曲更小之支持玻璃基板加以改善，但並未進行以藉由使支持玻璃基板預先朝與WLP之製造步驟中產生之翹曲相反之方向翹曲而抵消WLP之製造步驟中產生之翹曲為目的之研究。
又，已知藉由於玻璃基板被覆薄膜而產生翹曲(專利文獻2)，但對於使玻璃板以更薄之薄膜有效率地產生翹曲之技術未作研究。 先前技術文獻 專利文獻
專利文獻1：日本特開2017-30997號公報 專利文獻2：國際公開第2017/204167號
[發明所欲解決之問題]
雖然藉由使被覆層變厚而增大積層體之翹曲較為容易，但由於扇出型WLP之製造步驟中加工基板與支持基板之分離可藉由對剝離層進行可見光波長之雷射照射而實現，故而會因被覆層之材質或被覆層之厚度而阻礙雷射之透過，故而成為問題。
於此種狀況下，期待一種維持可見光透過性並且具有較大之翹曲之支持玻璃基板材料。 [解決問題之技術手段]
本發明者發現，藉由具有特定之翹曲與構成之積層體及基於特定條件之積層體之製造方法，可解決上述問題。
即，本發明提供一種積層體，其係具有玻璃板及被覆層者，且 上述被覆層含有選自由氮化矽、氧化鈦、氧化鋁、氧化鈮、氧化鋯、銦錫氧化物、氧化矽、氟化鎂及氟化鈣所組成之群中之1種以上之成分， 玻璃板之厚度dg與被覆層之厚度dc之比為 dc/dg=0.05×10-3 ～1.2×10-3 之範圍， 上述積層體於自重撓曲修正條件下之曲率半徑r1為10 m～150 m。 [發明之效果]
藉由本發明，可提供一種維護可見光透過性並且具有較大之翹曲之積層體。進而，藉由使用該積層體作為支持玻璃基板，可實現尺寸精度較高之WLP之製造。
對本發明之積層體及積層體之製造方法進行說明。再者，於本說明書中，表示數值範圍之波浪符號「～」只要無特別說明，則表示包含其前後所記載之數值作為下限值及上限值。
[玻璃組成] 本發明之積層體中所使用之玻璃板之組成並無特別限定，可使用可見光透過率較高之公知之組成。具體而言，可使用波長400 nm～1000 nm下之透過率之最低值(T%)為60%以上者。
作為較佳之組成，可列舉： 以氧化物基準之質量%表示為 SiO2 ：40%～70%、 B2 O3 ：0%～15%、 MgO：0%～10%、 CaO：0%～10%、 SrO：0%～13%、 BaO：0%～40%、 Na2 O：0%～30%、 K2 O：0%～13%、 Al2 O3 ：0.5%～15% 之範圍之組成。
作為尤佳之組成，可列舉： 以氧化物基準之質量%表示為 SiO2 ：49%～70%、 B2 O3 ：4%～13%、 MgO：0%～0.5%、 CaO：0%～8%、 SrO：0%～8%、 BaO：0%～13%、 Na2 O：4%～15%、 K2 O：0.1%～13%、 Al2 O3 ：4%～13% 之範圍之組成。
若組成為該範圍，則可見光透過率優異。又，關於高熱膨脹係數之玻璃組成，因熱處理造成之翹曲之影響增大，故而本發明之效果尤其大。
[玻璃板] 玻璃板可用於本發明之積層體。玻璃板係藉由將上述玻璃組成成形為特定之形狀(例如，四邊形或圓盤狀)之板而製造。
玻璃板之成形方法並無限定，可使用例如浮式法、熔融法及滾壓法等公知之方法。又，於本發明中，為了使積層體大幅地翹曲，較佳為使被覆前之玻璃板具有一定之翹曲。
關於較佳之被覆前之玻璃板之翹曲，玻璃板於自重撓曲修正條件(對玻璃晶圓本來具有之翹曲量進行修正所得之值；於重力下會產生因自重所引起之'撓曲'，但為去除其所得之值)下之曲率半徑r0較佳為200 m～500 m，進而較佳為300 m～400 m。藉由使被覆前之玻璃板之翹曲為該範圍，下述藉由被覆所獲得之積層體之翹曲增大。
處於此種條件之玻璃板係藉由例如自利用浮式法所製造之素板將具有該範圍之翹曲之部分切出而容易地獲得。
玻璃板之板厚(dg)較佳為0.3 mm～3.0 mm。進而較佳為0.5 mm～2.0 mm，尤佳為0.7 mm～1.2～ mm。藉由為該範圍，作為積層體之強度優異，重量亦成為容許範圍。又，玻璃板亦可使用經化學強化者。
[被覆層] 於本發明中，藉由於上述玻璃板被覆薄膜，而形成被覆層。被覆層含有選自由氮化矽、氧化鈦、氧化鋁、氧化鈮、氧化鋯、銦錫氧化物、氧化矽、氟化鎂及氟化鈣所組成之群中之1種以上之成分。氮化矽及氧化鈦之可見光透過性及使積層體翹曲之效果優異，故而較佳。
作為被覆方法，可使用濺鍍法、離子輔助蒸鍍法及霧劑沈積法等公知之方法。其中，濺鍍法使積層體翹曲之效果優異，故而較佳。並且，被覆係藉由對具有上述翹曲之玻璃板之凸面側進行，而增大玻璃板之翹曲。
被覆層(dc)之厚度較佳為0.05 μm～1.2 μm。進而較佳為0.1 μm～1.0 μm，尤佳為0.4 μm～0.6 μm。藉由為該範圍，可兼顧積層體之翹曲之大小與可見光透過性之高度。
[積層體] 本發明之積層體具有上述玻璃板及上述被覆層。又，自重撓曲修正條件下之曲率半徑r1為10 m～150 m，較佳為30 m～100 m之範圍。藉由為該範圍，可製造尺寸精度較高之WLP。
又，玻璃板之厚度dg及被覆層之厚度dc之比為dc/dg=0.05×10-3 ～1.2×10-3 ，較佳為0.4×10-3 ～0.5×10-3 之範圍。藉由為該範圍，可兼顧積層體之翹曲之大小與可見光透過性之高度。
積層體之厚度較佳為0.3 mm～3.5 mm。更佳為0.5 mm～2.5 mm，尤佳為0.7 mm～1.3 mm。藉由為該範圍，可兼顧積層體之強度與可見光透過性之高度。
又，積層體之形狀較佳為四邊形或圓盤狀。
該積層體可適當地用作支持玻璃基板。
[積層體之製造方法] 本發明之積層體係藉由於上述玻璃板進行上述被覆而製造。作為較佳之製造方法之具體例，為具有如下步驟之條件，即，如圖2所示，於具有自重撓曲修正條件下之曲率半徑200 m～500 m之翹曲之玻璃板11之凸側，進行含有選自由氮化矽、氧化鈦、氧化鋁、氧化鈮、氧化鋯、銦錫氧化物、氧化矽、氟化鎂及氟化鈣所組成之群中之1種以上之成分的薄膜(被覆層)12之被覆。藉由於該條件下進行製造，可適當地獲得積層體10於自重撓曲修正條件下之曲率半徑r1為10 m～150 m以下之積層體10。
於所獲得之積層體10之剝離層12設置半導體晶片13後，藉由以樹脂14將半導體晶片13密封，而獲得樹脂模製物。即便將積層體10之剝離層12上之半導體晶片13及樹脂14分離，亦可抑制包含半導體晶片13及樹脂14之加工基板產生翹曲。 [實施例]
以下，藉由實施例及比較例更具體地說明本發明，但只要發揮本發明之效果，則可適當變更實施形態。
＜評價用樣品形狀＞ 使用對直徑150 mm(6英吋)、板厚1.0 mm之圓盤狀之玻璃板於表1中記載之條件下進行被覆而成者。
＜測定條件、評價條件＞ [玻璃板之厚度(dg)及被覆層之厚度(dc)之測定] 於室溫條件下使用雷射位移計(神津精機公司製造之Dyvoce)，測定被覆前之玻璃板及被覆後之積層體之厚度，求出dg及dc。
[玻璃板及積層體之曲率半徑(r0、r1)] 對於樣品，使用雷射位移計(神津精機公司製造之Dyvoce)，藉由根據雙面差量模式之自重撓曲修正求出樣品本來具有之翹曲量，並以此為基準藉由形狀模擬而算出。然後，由利用模擬所獲得之形狀而求出曲率半徑。
將被覆前之玻璃板於自重撓曲修正條件下之曲率半徑設為r0，將被覆後之積層體之玻璃板於自重撓曲修正條件下之曲率半徑設為r1。
[翹曲之評價] 通常被覆層越厚，則藉由被覆所產生之翹曲越大。因此，翹曲之評價係關於下述式所示之R進行。評價A～D中，將A、B及C設為合格。 式：R=r1(m)×dc(μm) 評價： A：R≦30、 B：30＜R≦50、 C：50＜R＜70、 D：70≦R
[可見光透過性] 對於樣品，於室溫條件下使用分光透過率測定機(日本分光公司製造之V-700)，測定波長400-1000 nm下之透過率之最低值(T%)。評價A～C中，將A或B設為合格。 評價： A：80%≦T、 B：60%≦T＜80%、 C：T＜60%
[實施例1] 藉由浮式法而獲得組成1(以質量%計，SiO2 ：56.9%、Al2 O3 ：8.1%、CaO：2.3%、SrO：12.3%、BaO：20.4%)之玻璃之素板(縱橫1000 mm、厚度1.4 mm)。自上述素板之中心部裁切出半徑75 mm(直徑：150 mm)之圓形作為圓盤狀玻璃板。於進行倒角加工後，利用雙面研磨機(浜井製作所公司製造之16B-N/F)進行研磨而將板厚(dg)調整為1.0 mm。該玻璃板之曲率半徑r0(源自浮式法)於自重撓曲修正條件下為370 m。
其後，於濺鍍裝置(ULVAC公司製造之SIV-345XYSSS)中使用矽靶，藉由反應性濺鍍，於玻璃板之翹曲之凸面側以膜之壓縮應力成為1 GPa之方式形成氮化矽膜。被覆層之厚度(dc)為0.5 μm。將評價結果示於表1。
[實施例2～實施例7及比較例1～4] 變更為表1中記載之條件，除此以外，與實施例1同樣地進行操作。將評價結果示於表1。
[表1]
   玻璃 組成 被覆層 被覆方法 dc (μm) dg (mm) dc/dg (×10-3 ) r0 (m) r1 (m) 評價
T(%) R=r1×dc
實施例1 組成1 氮化矽 濺鍍 0.5 1 0.5 370 55 84(A) 27.5(A)
實施例2 組成2 氮化矽 濺鍍 0.5 1 0.5 370 54 84(A) 27(A)
實施例3 組成1 氧化鈦 濺鍍 0.4 1 0.4 370 60 75(B) 24(A)
實施例4 組成1 氮化矽 濺鍍 1 1 1 370 37 60(B) 37(B)
實施例5 組成1 氮化矽 濺鍍 0.1 1 0.1 370 113 87(A) 11.3(A)
實施例6 組成1 氮化矽 離子蒸鍍 0.5 1 0.5 370 100 83(A) 50(B)
實施例7 組成1 氮化矽 霧劑沈積法 0.7 1 0.7 370 98 80(A) 68.6(C)
比較例1 組成1 鉻 濺鍍 0.5 1 0.5 370 70 ≦50(D) 35(B)
比較例2 組成1 氧化鉭 濺鍍 0.8 1 0.8 370 640 84(A) 512(D)
比較例3 組成1 氮化矽 濺鍍 1.5 1 1.5 370 11 55(D) 16.5(A)
比較例4 組成1 氮化矽 濺鍍 0.5 1 0.5 1000 194 84(A) 97(D)
(質量%) ・組成1： SiO2 ：56.9%、 Al2 O3 ：8.1%、 CaO：2.3%、 SrO：12.3%、 BaO：20.4% ・組成2： SiO2 ：68.9%、 Al2 O3 ：5.9%、 MgO：4.1%、 CaO：7.3%、 Na2 O：14.6%、 K2 O：0.2%
本申請案係主張基於2018年12月21日向日本專利廳提出申請之日本專利特願2018-240262號之優先權者，將日本專利特願2018-240262號之全部內容引用於本申請案中。
10:積層體 11:玻璃板 12:薄膜(被覆層) 13:半導體晶片 14:樹脂 101:支持玻璃 102:剝離層 103:半導體晶片 104:樹脂
圖1係先前之WLP製造步驟(至支持基板剝離為止)之1例。 圖2係使用本發明之積層體作為支持玻璃基板之WLP製造步驟(至支持基板剝離為止)之1例。
10:積層體
11:玻璃板
12:薄膜(被覆層)
13:半導體晶片
14:樹脂

Claims (7)

  1. 一種積層體，其係具有玻璃板及被覆層者，且 上述被覆層含有選自由氮化矽、氧化鈦、氧化鋁、氧化鈮、氧化鋯、銦錫氧化物、氧化矽、氟化鎂及氟化鈣所組成之群中之1種以上之成分， 上述玻璃板之厚度dg與上述被覆層之厚度dc之比(dc/dg)為0.05×10-3 ～1.2×10-3 之範圍， 上述積層體於自重撓曲修正條件下之曲率半徑r1為10 m～150 m。
  2. 如請求項1之積層體，其中上述dg為0.3 mm～3.0 mm之範圍， 上述dc為0.05 μm～1.2 μm之範圍。
  3. 如請求項1或2之積層體，其中上述玻璃板中所使用之玻璃之組成以質量%計為 SiO2 ：40%～70%、 B2 O3 ：0%～15%、 MgO：0%～10%、 CaO：0%～10%、 SrO：0%～13%、 BaO：0%～40%、 Na2 O：0%～30%、 K2 O：0%～13%、 Al2 O3 ：0.5%～15% 之範圍。
  4. 如請求項1至3中任一項之積層體，其中上述積層體之形狀為四邊形或圓盤狀。
  5. 如請求項1至4中任一項之積層體，其中上述積層體為支持玻璃基板用途。
  6. 一種如請求項1至5中任一項之積層體之製造方法，其具有如下步驟：於具有自重撓曲修正條件下之曲率半徑r0為200 m～500 m之翹曲之玻璃板之凸側，進行含有選自由氮化矽、氧化鈦、氧化鋁、氧化鈮、氧化鋯、銦錫氧化物、氧化矽、氟化鎂及氟化鈣所組成之群中之1種以上之成分的薄膜之被覆。
  7. 如請求項6之積層體之製造方法，其中上述被覆之方法為濺鍍法。
TW108131615A 2018-12-21 2019-09-03 積層體及積層體之製造方法 TWI716991B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018240262 2018-12-21
JP2018-240262 2018-12-21

Publications (2)

Publication Number Publication Date
TW202023818A true TW202023818A (zh) 2020-07-01
TWI716991B TWI716991B (zh) 2021-01-21

Family

ID=71102744

Family Applications (3)

Application Number Title Priority Date Filing Date
TW110101898A TWI781519B (zh) 2018-12-21 2019-09-03 積層體及積層體之製造方法
TW108131615A TWI716991B (zh) 2018-12-21 2019-09-03 積層體及積層體之製造方法
TW111138335A TWI828360B (zh) 2018-12-21 2019-09-03 積層體及積層體之製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW110101898A TWI781519B (zh) 2018-12-21 2019-09-03 積層體及積層體之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW111138335A TWI828360B (zh) 2018-12-21 2019-09-03 積層體及積層體之製造方法

Country Status (5)

Country Link
US (2) US11594426B2 (zh)
JP (3) JP6885476B2 (zh)
CN (2) CN111741936B (zh)
TW (3) TWI781519B (zh)
WO (1) WO2020129297A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023127000A (ja) * 2020-08-06 2023-09-13 Ａｇｃ株式会社 積層体の製造方法、積層体および半導体パッケージの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4066344A (en) * 1976-08-30 1978-01-03 Dipak Chandra Talapatra Light-weight arch type structures for large reflective mirrors
JP4613706B2 (ja) * 2004-11-24 2011-01-19 住友金属鉱山株式会社 吸収型多層膜ｎｄフィルター
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
JP5238924B2 (ja) * 2006-11-09 2013-07-17 並木精密宝石株式会社 単結晶基板及び窒化物半導体単結晶の製造方法
JP5471612B2 (ja) * 2009-06-22 2014-04-16 日立金属株式会社 圧電性薄膜素子の製造方法及び圧電薄膜デバイスの製造方法
JP6191138B2 (ja) 2012-01-12 2017-09-06 日本電気硝子株式会社 ガラス
EA030714B1 (ru) * 2012-03-05 2018-09-28 Сэн-Гобэн Гласс Франс Стекло, снабженное покрытием, отражающим тепловое излучение
JP2013253317A (ja) * 2012-05-08 2013-12-19 Fujifilm Corp 半導体装置用基板、半導体装置、調光型照明装置、自己発光表示装置、太陽電池および反射型液晶表示装置
JPWO2016017645A1 (ja) * 2014-08-01 2017-07-06 旭硝子株式会社 無機膜付き支持基板およびガラス積層体、ならびに、それらの製造方法および電子デバイスの製造方法
JP6627388B2 (ja) * 2014-12-16 2020-01-08 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層体
CN107614452A (zh) * 2015-05-28 2018-01-19 旭硝子株式会社 玻璃基板及层叠基板
JP2017030997A (ja) 2015-07-30 2017-02-09 日本電気硝子株式会社 薄膜付き強化ガラス基板の製造方法及び薄膜付き強化ガラス基板
CN105448666A (zh) * 2015-12-02 2016-03-30 苏州工业园区纳米产业技术研究院有限公司 利用二氧化硅的应力来改变晶圆硅片基体弯曲度的方法
JP7047757B2 (ja) 2016-05-25 2022-04-05 Ａｇｃ株式会社 無アルカリガラス基板、積層基板、およびガラス基板の製造方法
WO2018051987A1 (ja) * 2016-09-16 2018-03-22 旭硝子株式会社 ガラス基板、および積層基板
EP3560899B1 (en) * 2016-12-21 2022-02-02 LG Chem, Ltd. Method for manufacturing curved laminated glass and curved laminated glass

Also Published As

Publication number Publication date
CN111741936B (zh) 2023-05-05
US20230187227A1 (en) 2023-06-15
US11594426B2 (en) 2023-02-28
JP2021138611A (ja) 2021-09-16
TWI781519B (zh) 2022-10-21
JP7131654B2 (ja) 2022-09-06
JP2022164734A (ja) 2022-10-27
US20200279756A1 (en) 2020-09-03
US11817328B2 (en) 2023-11-14
TWI828360B (zh) 2024-01-01
WO2020129297A1 (ja) 2020-06-25
JPWO2020129297A1 (ja) 2021-02-15
JP6885476B2 (ja) 2021-06-16
TW202304709A (zh) 2023-02-01
TWI716991B (zh) 2021-01-21
TW202134055A (zh) 2021-09-16
CN116496000A (zh) 2023-07-28
CN111741936A (zh) 2020-10-02
JP7338761B2 (ja) 2023-09-05

Similar Documents

Publication Publication Date Title
US20210293995A1 (en) Cover glass and process for producing the same
US20180038995A1 (en) Base with low-reflection film
TW201708142A (zh) 玻璃基板、積層基板、及玻璃基板之製造方法
US10882778B2 (en) Glass substrate, laminated substrate, laminate, and method for producing semiconductor package
TW201609417A (zh) 蓋玻璃
CN108238726B (zh) 包括有硬质材料涂层的抗反射涂层系统的衬底及制造方法
TWI716991B (zh) 積層體及積層體之製造方法
TW201827370A (zh) 玻璃基板及積層基板
TW201808845A (zh) 無鹼玻璃基板、積層基板、及玻璃基板之製造方法
JP6223116B2 (ja) 無機光学素子
CN105204685A (zh) 一种抗刮抗指纹触摸屏及其制备方法
JP2018002552A (ja) 強化ガラスの製造方法および強化ガラス製造装置
TW201800358A (zh) 強化玻璃板及強化玻璃板的製造方法
EP3365295B1 (en) Ultraviolet light-resistant articles and methods for making the same
KR101792594B1 (ko) 사파이어 글래스 및 그의 제조방법
TW202237395A (zh) 積層構件
TW201815701A (zh) 圓盤狀玻璃及其製造方法
TWI846902B (zh) 積層構件
JP2023037490A (ja) 反射防止膜付き光学部材、及びその製造方法
KR20220117560A (ko) 성장성 이물 및 헤이즈 발생이 억제된 펠리클 구조의 포토마스크
TW202128589A (zh) 支持玻璃基板及積層體