TW202023009A - Temperature adjusting equipment of high-temperature oven for greatly enhancing heating and cooling efficiency of gas and effectively reducing production cost - Google Patents
Temperature adjusting equipment of high-temperature oven for greatly enhancing heating and cooling efficiency of gas and effectively reducing production cost Download PDFInfo
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本發明係屬電子封裝的技術領域,尤指其技術上提供一高溫烘箱的溫度調整設備,藉由氣體再處理裝置中的冷卻器來冷卻由處理腔室流出的氣體,透過加熱器來加熱該氣體再處理裝置內之氣體,再利用氣體回收器將氣體送回處理腔室內,大幅度提高了氣體的加熱及冷卻效率,並達到氣體回收再利用之目的,有效降低生產成本。 The present invention belongs to the technical field of electronic packaging, and particularly refers to the technically providing a high-temperature oven temperature adjustment equipment. The gas flowing out of the processing chamber is cooled by the cooler in the gas reprocessing device, and the gas is heated by the heater. The gas in the gas reprocessing device is reused by the gas recovery device to send the gas back to the processing chamber, which greatly improves the heating and cooling efficiency of the gas, and achieves the purpose of gas recovery and reuse, effectively reducing production costs.
近年來電子技術日新月異,利用積體電路元件所組成的電子產品,已成為現代人日常生活中不可或缺的工具。在半導體封裝的製程之中,冷卻製程與加熱製程往往扮演著重要的角色,並且經常需要在這些冷卻製程與加熱製程之間進行切換。例如,從高溫冷卻至低溫或者從高溫冷卻至低溫然後再加熱至高溫等等,其冷卻及/或加熱速率愈快,則製程效率愈高。在習知的冷卻製程中,經常係直接在處理腔室內採用氣冷式或水冷式冷卻器進行氣體冷卻,然而由於腔體的熱容量太大,致無法達到快速冷卻的效果,另,在習知的加熱製程中,經常係直接在處理腔室內採用加熱器進行氣體加熱,同樣由於腔體的熱容量太大,致無法達到快速加熱的效果,因此,為了達到快速冷卻及快速加熱的效果,習知冷卻製程往往採用直接排放高溫的氣體,然後再通入低溫的氣體,以達到快速冷卻的效果。然而,因為必須排空原本既存的高溫氣體,然後再從外部通入新的低溫氣體,因此,無法有效利用原本既存的氣體,導致氣體成本的浪費。在上述情況下,若進一步希望使製程溫度回到降溫前的溫度等級(或者甚至達到比降溫前更高的溫度等級),則必須先將低溫氣體排空,然後再從外部通入新的高溫氣體,同樣導致氣體成本的浪費。又,在加熱製程中有部份的製程化學品會因揮發或蒸發而瀰漫於處理腔室中,當冷卻製程時,飄散在處理腔室中的氣態製程化學品發生冷凝而形成汙染物附著在腔體內壁,造成機台維護成本提高與產能降低,另,習知半導體封裝製程所使用之烘箱是以熱對流的方式加熱,這樣的加熱方式必須於烘腔內部置入一組風扇使內部 加熱的氣體產生對流,為了快速升溫以及升溫時的均溫性必須考慮加速加熱氣體的流動,如此氣體的擾動所造成對於烘烤產品的震動對許多半導體元件來說存在著難以臆測的風險,實有加以改良的必要。 In recent years, electronic technology has been advancing with each passing day. Electronic products composed of integrated circuit components have become an indispensable tool in modern people’s daily life. In the semiconductor packaging process, the cooling process and the heating process often play an important role, and it is often necessary to switch between the cooling process and the heating process. For example, cooling from high temperature to low temperature or cooling from high temperature to low temperature and then heating to high temperature, etc., the faster the cooling and/or heating rate, the higher the process efficiency. In the conventional cooling process, air-cooled or water-cooled coolers are often used directly in the processing chamber for gas cooling. However, the heat capacity of the cavity is too large to achieve rapid cooling effects. In addition, in the conventional In the heating process, the heater is often used directly in the processing chamber for gas heating. Also, because the heat capacity of the chamber is too large, the effect of rapid heating cannot be achieved. Therefore, in order to achieve the effect of rapid cooling and rapid heating, the conventional The cooling process often uses the direct discharge of high-temperature gas, and then the low-temperature gas is introduced to achieve the effect of rapid cooling. However, since the existing high-temperature gas must be evacuated, and then new low-temperature gas must be introduced from the outside, the existing gas cannot be effectively used, resulting in waste of gas costs. In the above circumstances, if it is further desired to return the process temperature to the temperature level before cooling (or even reach a higher temperature level than before cooling), the low-temperature gas must be evacuated first, and then a new high temperature is introduced from the outside Gas also leads to waste of gas costs. In addition, during the heating process, some of the process chemicals will be diffused in the processing chamber due to volatilization or evaporation. When the process is cooled, the gaseous process chemicals floating in the processing chamber are condensed to form pollutants attached to it. The inner wall of the cavity increases the maintenance cost of the machine and reduces the production capacity. In addition, the oven used in the conventional semiconductor packaging process is heated by heat convection. This heating method requires a set of fans to be placed inside the oven to make the inside The heated gas produces convection. In order to increase the temperature quickly and the uniformity of the temperature rise, it is necessary to consider accelerating the flow of the heated gas. The vibration of the baked product caused by such gas disturbance poses an unpredictable risk for many semiconductor components. There is a need for improvement.
是以,針對上述習知半導體封裝因製程切換所存在之問題點,如何開發一種更具理想實用性並兼顧經濟效益之溫度調整設備,實為相關業者積極研發突破之目標及方向。 Therefore, in view of the above-mentioned problems of conventional semiconductor packaging due to process switching, how to develop a temperature adjustment device that is more ideal and practical while taking into account economic benefits is actually the goal and direction of the relevant industry to actively research and develop breakthroughs.
有鑑於此,發明人本於多年從事相關產品之製造開發與設計經驗,針對上述之目標,詳加設計與審慎評估後,終得一確具實用性之本發明。 In view of this, the inventor has been engaged in the manufacturing, development and design of related products for many years. Aiming at the above-mentioned goals, after detailed design and careful evaluation, the inventor finally obtained a practical invention.
欲解決之技術問題點:習知半導體封裝在製程切換時由於腔體的熱容量太大無法達到快速冷卻及快速加熱的效果,為了提升冷卻及加熱的效果,冷卻製程時往往採用直接排放高溫的氣體,然後再通入低溫的氣體,導致氣體成本的浪費,加熱製程時為了使溫度能夠快速達到降溫前的溫度等級,必須先將低溫氣體排空,然後再從外部通入新的高溫氣體,同樣導致氣體成本的浪費,另,習知半導體封裝製程所使用之烘箱是以熱對流的方式加熱,為了快速升溫以及升溫時的均溫性必須考慮加速加熱氣體的流動,這樣氣體的擾動所造成對於烘烤產品的震動對許多半導體元件來說存在著難以臆測的風險,實有加以改良的必要。 Technical problem to be solved: The conventional semiconductor package cannot achieve rapid cooling and rapid heating due to the large heat capacity of the cavity during process switching. In order to improve the cooling and heating effect, the cooling process often uses direct discharge of high-temperature gas , And then pass in low-temperature gas, which leads to waste of gas cost. In order to make the temperature quickly reach the temperature level before cooling during the heating process, the low-temperature gas must be evacuated first, and then new high-temperature gas is introduced from the outside. This leads to a waste of gas cost. In addition, the oven used in the conventional semiconductor packaging process is heated by thermal convection. In order to increase the temperature quickly and the temperature uniformity during the temperature increase, the acceleration of the heating gas flow must be considered. For many semiconductor components, the vibration of the baked product presents an unpredictable risk, and it is necessary to improve it.
解決問題之技術特點:為改善上述之問題,本發明第一實施例係提供一種高溫烘箱的溫度調整設備,包括:一烘箱,該烘箱包含一烘箱腔體、至少一進氣岐管、至少一排氣岐管、一內框套、至少一加熱元件及一腔門,該烘箱腔體內部形成一處理腔室,該處理腔室一側裝設至少一該進氣岐管,另一側裝設至少一該排氣岐管,至少一該進氣岐管外周貫設複數個進氣孔,至少一該排氣岐管外周貫設複數個排氣孔,該烘箱腔體內璧環設該內框套,該內框套內部形成一環狀的容置空間,該容置空間內設置至少一該加熱元件,透過至少一該加熱元件對該內框套加熱,再經由該內框套以熱輻射方式對該處理腔室加熱,該腔門可垂直升降地設置於該烘箱腔體底部,該腔門內表面設置一處理框架,該處理框架上可放置待處理 標的物,該待處理標的物可以是半導體晶片。 Technical features for solving the problem: In order to improve the above problem, the first embodiment of the present invention provides a high-temperature oven temperature adjustment equipment, including: an oven, the oven includes an oven cavity, at least one intake manifold, at least one An exhaust manifold, an inner frame sleeve, at least one heating element, and a chamber door. The oven cavity forms a processing chamber. One side of the processing chamber is equipped with at least one intake manifold, and the other side is installed At least one of the exhaust manifolds is provided, at least one of the intake manifolds is provided with a plurality of intake holes through the outer circumference, at least one of the exhaust manifolds is provided with a plurality of exhaust holes through the outer circumference, and the oven cavity is surrounded by the inner A frame sleeve is formed inside the inner frame sleeve. At least one heating element is arranged in the accommodating space. The inner frame sleeve is heated by the at least one heating element, and then the inner frame sleeve is heated The processing chamber is heated by radiation, the door can be vertically raised and lowered at the bottom of the oven cavity, the inner surface of the door is provided with a processing frame, and the processing frame can be placed The target, the target to be processed may be a semiconductor wafer.
一氣體再處理裝置,該處理腔室內的氣體流入該氣體再處理裝置,藉由該氣體再處理裝置處理該氣體。該氣體再處理裝置包含一冷卻器、一加熱器以及一氣體回收器,藉由該冷卻器來冷卻該氣體再處理裝置內之氣體。藉由該加熱器來加熱經由該氣體再處理裝置流回該處理腔室之氣體。利用該氣體回收器將該處理腔室內的氣體吸入該氣體再處理裝置,該吸入之氣體可直接排出該氣體再處理裝置或經再處理後流回該處理腔室,該氣體回收器為一風扇。 A gas reprocessing device, the gas in the processing chamber flows into the gas reprocessing device, and the gas is processed by the gas reprocessing device. The gas reprocessing device includes a cooler, a heater and a gas recovery device, and the gas in the gas reprocessing device is cooled by the cooler. The heater is used to heat the gas flowing back to the processing chamber through the gas reprocessing device. Use the gas recovery device to suck the gas in the processing chamber into the gas reprocessing device. The inhaled gas can be directly discharged from the gas reprocessing device or flow back to the processing chamber after reprocessing. The gas recovery device is a fan .
前述,至少一該加熱元件係為加熱套或加熱棒。 In the foregoing, at least one of the heating elements is a heating jacket or a heating rod.
前述,在至少一該進氣岐管內的氣體,經由各該進氣孔噴出,擾動該處理腔室內的氣體,並藉由至少一該排氣岐管將該處理腔室內的氣體排出而形成熱對流,促進該處理腔室內部的溫度調節,有效提升氣體溫度分布的均勻性。 As mentioned above, the gas in at least one of the intake manifolds is ejected through each of the intake holes to disturb the gas in the processing chamber, and the gas in the processing chamber is discharged by at least one of the exhaust manifolds. Heat convection promotes temperature regulation inside the processing chamber and effectively improves the uniformity of gas temperature distribution.
本發明第二實施例係提供一種高溫烘箱的溫度調整設備,包括:一烘箱,該烘箱包含一烘箱腔體、至少一進氣岐管、至少一排氣岐管、至少一加熱套及一腔門,該烘箱腔體內部形成一處理腔室,該處理腔室一側裝設至少一該進氣岐管,另一側裝設至少一該排氣岐管,至少一該進氣岐管外周貫設複數個進氣孔,至少一該排氣岐管外周貫設複數個排氣孔,該烘箱腔體外璧環設至少一該加熱套,至少一該加熱套對該烘箱腔體外璧加熱,再經由該烘箱腔體以熱輻射方式對該處理腔室加熱,該腔門可垂直升降地設置於該烘箱腔體底部,該腔門內表面設置一處理框架,該處理框架上可放置待處理標的物,該待處理標的物可以是半導體晶片。 The second embodiment of the present invention provides a temperature adjustment device for a high-temperature oven, which includes: an oven, which includes an oven cavity, at least one intake manifold, at least one exhaust manifold, at least one heating jacket, and a cavity Door, the inside of the oven cavity forms a processing chamber, and at least one intake manifold is installed on one side of the processing chamber, at least one exhaust manifold is installed on the other side, and at least one intake manifold outer periphery A plurality of air inlet holes are arranged, at least one exhaust manifold is provided with a plurality of air outlet holes on the periphery, at least one heating jacket is arranged on the outer wall of the oven cavity, and at least one heating jacket heats the outer wall of the oven cavity, The processing chamber is heated by heat radiation through the oven cavity. The door can be vertically raised and lowered at the bottom of the oven cavity. The inner surface of the cavity door is provided with a processing frame on which the processing frame can be placed. The target, the target to be processed may be a semiconductor wafer.
一氣體再處理裝置,該處理腔室內的氣體流入該氣體再處理裝置,藉由該氣體再處理裝置處理該氣體。該氣體再處理裝置包含一冷卻器、一加熱器以及一氣體回收器,藉由該冷卻器來冷卻該氣體再處理裝置內之氣體。藉由該加熱器來加熱經由該氣體再處理裝置流回該處理腔室之氣體。利用該氣體回收器將該處理腔室內的氣體吸入該氣體再處理裝置,該吸入之氣體可直接排出該氣體再處理裝置或經再處理後流回該處理腔室,該氣體回收器為一風扇。 A gas reprocessing device, the gas in the processing chamber flows into the gas reprocessing device, and the gas is processed by the gas reprocessing device. The gas reprocessing device includes a cooler, a heater and a gas recovery device, and the gas in the gas reprocessing device is cooled by the cooler. The heater is used to heat the gas flowing back to the processing chamber through the gas reprocessing device. Use the gas recovery device to suck the gas in the processing chamber into the gas reprocessing device. The inhaled gas can be directly discharged from the gas reprocessing device or flow back to the processing chamber after reprocessing. The gas recovery device is a fan .
前述,在至少一該進氣岐管內的氣體,經由各該進氣孔噴 出,擾動該處理腔室內的氣體,並藉由至少一該排氣岐管將該處理腔室內的氣體排出而形成熱對流,促進該處理腔室內部的溫度調節,有效提升氣體溫度分布的均勻性。 As mentioned above, the gas in at least one of the intake manifolds is injected through each of the intake holes Out, disturb the gas in the processing chamber, and exhaust the gas in the processing chamber through at least one exhaust manifold to form thermal convection, promote the temperature regulation inside the processing chamber, and effectively improve the uniformity of the gas temperature distribution Sex.
本發明第三實施例係提供一種高溫烘箱的溫度調整設備,包括:一烘箱,該烘箱包含一烘箱腔體、至少一進氣岐管、至少一排氣岐管、至少一加熱元件及一腔門,該烘箱腔體內部形成一處理腔室,該處理腔室一側裝設至少一該進氣岐管,另一側裝設至少一該排氣岐管,至少一該進氣岐管外周貫設複數個進氣孔,至少一該排氣岐管外周貫設複數個排氣孔,至少一該加熱元件設置於該烘箱腔體內璧與至少一該進氣岐管旁側間,氣體在至少一該進氣岐管內,經由各該進氣孔噴出,讓至少一該加熱元件以熱對流方式對該處理腔室加熱,該腔門可垂直升降地設置於該烘箱腔體底部,該腔門內表面設置一處理框架,該處理框架上可放置待處理標的物,該待處理標的物可以是半導體晶片。 The third embodiment of the present invention provides a temperature adjustment device for a high-temperature oven, including: an oven including an oven cavity, at least one intake manifold, at least one exhaust manifold, at least one heating element, and a cavity Door, the inside of the oven cavity forms a processing chamber, and at least one intake manifold is installed on one side of the processing chamber, at least one exhaust manifold is installed on the other side, and at least one intake manifold outer periphery A plurality of air inlet holes are arranged, at least one exhaust manifold is arranged with a plurality of air outlet holes, at least one heating element is arranged between the oven cavity and at least one side of the inlet manifold, and the gas is At least one of the intake manifolds is sprayed out through each of the intake holes to allow at least one of the heating elements to heat the processing chamber in a thermal convection manner. The chamber door can be vertically raised and lowered at the bottom of the oven cavity. A processing frame is arranged on the inner surface of the cavity door, and an object to be processed can be placed on the processing frame, and the object to be processed can be a semiconductor wafer.
一氣體再處理裝置,該處理腔室內的氣體流入該氣體再處理裝置,藉由該氣體再處理裝置處理該氣體。該氣體再處理裝置包含一冷卻器、一加熱器以及一氣體回收器,藉由該冷卻器來冷卻該氣體再處理裝置內之氣體。藉由該加熱器來加熱經由該氣體再處理裝置流回該處理腔室之氣體。利用該氣體回收器將該處理腔室內的氣體吸入該氣體再處理裝置,該吸入之氣體可直接排出該氣體再處理裝置或經再處理後流回該處理腔室,該氣體回收器為一風扇。 A gas reprocessing device, the gas in the processing chamber flows into the gas reprocessing device, and the gas is processed by the gas reprocessing device. The gas reprocessing device includes a cooler, a heater and a gas recovery device, and the gas in the gas reprocessing device is cooled by the cooler. The heater is used to heat the gas flowing back to the processing chamber through the gas reprocessing device. Use the gas recovery device to suck the gas in the processing chamber into the gas reprocessing device. The inhaled gas can be directly discharged from the gas reprocessing device or flow back to the processing chamber after reprocessing. The gas recovery device is a fan .
前述,至少一該加熱元件係為加熱套或加熱棒。 In the foregoing, at least one of the heating elements is a heating jacket or a heating rod.
前述,該高溫烘箱的溫度調整設備更包含一氣體輸送單元,該氣體輸送單元包含一氣體輸入管路、一氣體排出管路、一氣體回收管路及一氣體排放管路,該氣體輸入管路一端連接至少一該進氣岐管,另一端連接一氣體源或連結該氣體回收管路,該氣體源係為一空氣壓縮機或廠務氣體管路,該氣體源將一預定壓力的氣體經由該氣體輸入管路輸入該處理腔室,該氣體排出管路一端連接至少一該排氣岐管,另一端連接該氣體再處理裝置,該氣體回收管路一端連接該氣體輸入管路,抑或直接連結至少一該進氣岐管,另一端連接該氣體再處理裝置,該氣體排放管路一端連接該氣體再處理裝置,藉由排放該氣體再處理裝置內之氣體至外界。 As mentioned above, the temperature adjustment equipment of the high-temperature oven further includes a gas delivery unit that includes a gas input pipeline, a gas discharge pipeline, a gas recovery pipeline, and a gas discharge pipeline. The gas input pipeline One end is connected to at least one of the intake manifold, and the other end is connected to a gas source or connected to the gas recovery pipeline. The gas source is an air compressor or a service gas pipeline. The gas source passes a predetermined pressure of gas through The gas input pipeline is input into the processing chamber, one end of the gas discharge pipeline is connected to at least one exhaust manifold, the other end is connected to the gas reprocessing device, one end of the gas recovery pipeline is connected to the gas input pipeline, or directly At least one of the intake manifolds is connected, the other end is connected to the gas reprocessing device, and one end of the gas discharge pipeline is connected to the gas reprocessing device, by discharging the gas in the gas reprocessing device to the outside.
前述,各該進氣孔呈等間距排列設置。 As mentioned above, the air intake holes are arranged at equal intervals.
前述,各該排氣孔呈等間距排列設置。 As mentioned above, the vent holes are arranged at equal intervals.
前述,該腔門係以氣壓式、液壓式或馬達驅動方式開啟、關閉。 As mentioned above, the cavity door is opened and closed by pneumatic, hydraulic or motor drive.
前述,該氣體再處理裝置更包含至少一過濾器,透過至少一該過濾器過濾流出該處理腔室的氣體。 As mentioned above, the gas reprocessing device further includes at least one filter, and the gas flowing out of the processing chamber is filtered through the at least one filter.
前述,該氣體再處理裝置更包含一觸媒轉換器,在加熱此氣體期間藉由該觸媒轉換器處理該氣體。 As mentioned above, the gas reprocessing device further includes a catalytic converter, and the gas is processed by the catalytic converter during the heating of the gas.
前述,當該處理腔室的製程需求溫度較高時,可在該氣體離開該氣體再處理裝置之後並且返回到該處理腔室內之前,於該氣體回收管路設置一加熱器及一觸媒轉換器,以進一步加熱及/或處理離開氣體再處理裝置的氣體,俾能縮短在該處理腔室內加熱氣體的時間及/或利用催化反應將此氣體進行進一步淨化。 As mentioned above, when the process temperature requirement of the processing chamber is relatively high, a heater and a catalytic converter can be installed in the gas recovery pipeline after the gas leaves the gas reprocessing device and before returning to the processing chamber. To further heat and/or process the gas leaving the gas reprocessing device, so as to shorten the time for heating the gas in the processing chamber and/or further purify the gas by catalytic reaction.
前述,該氣體夾雜氣態製程化學品流入各該排氣孔,經由至少一排氣岐管流出該處理腔室外。 As mentioned above, the gas mixed with gaseous process chemicals flows into each of the exhaust holes, and flows out of the processing chamber through at least one exhaust manifold.
前述,當該腔門開啟時同步將該處理框架移出該處理腔室外,可輕易地放置、取出標的物,該腔門關閉時同步將該處理框架移入該處理腔室內,有效節省人力作業成本。 As mentioned above, when the door is opened, the processing frame is synchronously moved out of the processing chamber, and the object can be easily placed and taken out. When the door is closed, the processing frame is moved into the processing chamber synchronously, effectively saving labor cost.
對照先前技術之功效:本發明之高溫烘箱的溫度調整設備,藉由加熱器來加熱經由該氣體再處理裝置流回該處理腔室之氣體,縮短在處理腔室內加熱氣體的時間,有效提升氣體的加熱效率;利用氣體回收器將該處理腔室內的氣體吸入該氣體再處理裝置,該吸入之氣體經再處理後流回該處理腔室,達到氣體回收再利用之目的,有效降低生產成本;處理腔室內的氣體夾雜氣態製程化學品在製程完成後經由氣體排出管路流入該氣體再處理裝置,透過至少一該過濾器濾除氣體中的製程化學品汙染物,可避免氣體回收再利用時處理腔室遭受汙染;處理腔室內的氣體流入氣體再處理裝置,藉由冷卻器來冷卻該氣體,相較於直接在較高溫該處理腔室內進行氣體冷卻,且又無烘箱腔體熱容量太大的影響,可有效提升氣體的冷卻效率;氣體經由各該進氣孔噴出,擾動處理腔室內的氣體,形成熱對流,促進處理腔室內部的溫度調節,有效提升氣體溫度分布的均勻性。 Compared with the effect of the prior art: the temperature adjustment equipment of the high temperature oven of the present invention uses a heater to heat the gas flowing back to the processing chamber through the gas reprocessing device, shortening the time for heating the gas in the processing chamber, and effectively increasing the gas Use a gas recovery device to suck the gas in the processing chamber into the gas reprocessing device, and the inhaled gas flows back to the processing chamber after reprocessing, achieving the purpose of gas recovery and reuse, effectively reducing production costs; The gas mixed with gaseous process chemicals in the processing chamber flows into the gas reprocessing device through the gas exhaust pipe after the process is completed, and the process chemical pollutants in the gas are filtered out through at least one of the filters, which can avoid gas recovery and reuse. The processing chamber is contaminated; the gas in the processing chamber flows into the gas reprocessing device, and the gas is cooled by a cooler. Compared with the gas cooling directly in the processing chamber at a higher temperature, the heat capacity of the oven without the oven is too large The effect of, can effectively improve the cooling efficiency of the gas; the gas is ejected through each of the inlet holes, disturbing the gas in the processing chamber, forming thermal convection, promoting the temperature adjustment inside the processing chamber, and effectively improving the uniformity of the gas temperature distribution.
有關本發明所採用之技術、手段及其功效,茲舉數較佳實施例並配合圖式詳細說明於後,相信本發明上述之目的、構造及特徵,當可由之得一深入而具體的瞭解。 With regard to the techniques, methods and effects adopted by the present invention, a few preferred embodiments and detailed descriptions are given in conjunction with the drawings. I believe that the above-mentioned objectives, structures and features of the present invention should be understood in detail. .
2‧‧‧烘箱 2‧‧‧Oven
5‧‧‧氣體輸送單元 5‧‧‧Gas delivery unit
6‧‧‧氣體再處理裝置 6‧‧‧Gas reprocessing device
20‧‧‧烘箱腔體 20‧‧‧Oven cavity
21‧‧‧進氣岐管 21‧‧‧Intake Manifold
211‧‧‧進氣孔 211‧‧‧Air Inlet
22‧‧‧排氣岐管 22‧‧‧Exhaust Manifold
221‧‧‧排氣孔 221‧‧‧Exhaust hole
23‧‧‧內框套 23‧‧‧Inner frame cover
231‧‧‧容置空間 231‧‧‧accommodating space
24‧‧‧加熱元件 24‧‧‧Heating element
24a‧‧‧加熱套 24a‧‧‧Heating jacket
25‧‧‧腔門 25‧‧‧cavity door
27‧‧‧處理腔室 27‧‧‧Processing chamber
28‧‧‧處理框架 28‧‧‧Processing framework
51‧‧‧氣體輸入管路 51‧‧‧Gas input pipeline
52‧‧‧氣體排出管路 52‧‧‧Gas discharge line
53‧‧‧氣體回收管路 53‧‧‧Gas recovery pipeline
54‧‧‧氣體排放管路 54‧‧‧Gas discharge pipeline
55‧‧‧氣體源 55‧‧‧Gas source
61‧‧‧冷卻器 61‧‧‧Cooler
62‧‧‧過濾器 62‧‧‧Filter
63‧‧‧加熱器 63‧‧‧Heater
64‧‧‧觸媒轉換器 64‧‧‧Catalyst converter
65‧‧‧氣體回收器 65‧‧‧Gas recovery device
66‧‧‧加熱器 66‧‧‧Heater
67‧‧‧觸媒轉換器 67‧‧‧Catalyst converter
第1圖係本發明之第一實施例之高溫烘箱的溫度調整設備示意圖。 Figure 1 is a schematic diagram of the temperature adjustment equipment of the high temperature oven of the first embodiment of the present invention.
第2圖係本發明之第一實施例之烘箱構造示意圖。 Figure 2 is a schematic diagram of the oven structure of the first embodiment of the present invention.
第3圖係本發明之第二實施例之高溫烘箱的溫度調整設備示意圖。 Figure 3 is a schematic diagram of the temperature adjustment equipment of the high temperature oven of the second embodiment of the present invention.
第4圖係本發明之第二實施例之烘箱構造示意圖。 Figure 4 is a schematic diagram of the oven structure of the second embodiment of the present invention.
第5圖係本發明之第三實施例之高溫烘箱的溫度調整設備示意圖。 Fig. 5 is a schematic diagram of the temperature adjustment equipment of the high-temperature oven of the third embodiment of the present invention.
第6圖係本發明之第三實施例之烘箱構造示意圖。 Figure 6 is a schematic diagram of the oven structure of the third embodiment of the present invention.
參閱第1及第2圖所示,本發明第一實施例係提供一種高溫烘箱的溫度調整設備,包括:一烘箱2,該烘箱2包含一烘箱腔體20、至少一進氣岐管21、至少一排氣岐管22、一內框套23、至少一加熱元件24及一腔門25,該烘箱腔體20內部形成一處理腔室27,該處理腔室27一側裝設至少一該進氣岐管21,另一側裝設至少一該排氣岐管22,至少一該進氣岐管21外周貫設複數個進氣孔211,各該進氣孔211呈等間距排列設置,至少一該排氣岐管22外周貫設複數個排氣孔221,各該排氣孔221呈等間距排列設置,該烘箱腔體20內璧環設該內框套23,該內框套23內部形成一環狀的容置空間231,該容置空間231設置至少一該加熱元件24,至少一該加熱元件24係為加熱套或加熱棒,透過至少一該加熱元件24對該內框套23加熱,再經由該內框套23以熱輻射方式對該處理腔室27加熱,使該處理腔室27籠罩在高溫及高壓的工作環境中,該處理腔室27內之工作溫度介於攝氏20度(室溫)至攝氏1500度的範圍,工作壓力變化範圍介於1大氣壓(atm)至100大氣壓(atm)之間,在至少一該進氣岐管21內的氣體,經由各該進氣孔211噴出,擾動該處理腔室27內的氣體,並藉由至少一該排氣岐管將該處理腔室內的氣體排出而形成熱對流,促進該處理腔室27內部的溫度調節,有效提升氣體溫度分布的均勻性,該腔門25可垂直升降地設置於
該烘箱腔體20底部,該腔門25係以氣壓式、液壓式或馬達驅動方式開啟、關閉,該腔門25內表面設置一處理框架28,該處理框架28上可放置待處理標的物,該待處理標的物可以是半導體晶片。
Referring to Figures 1 and 2, the first embodiment of the present invention provides a high-temperature oven temperature adjustment equipment, including: an
一氣體輸送單元5,該氣體輸送單元5包含一氣體輸入管路51、一氣體排出管路52、一氣體回收管路53及一氣體排放管路54,該氣體輸入管路51一端連接至少一該進氣岐管21,另一端連接一氣體源55或連結該氣體回收管路53,該氣體源55係為一空氣壓縮機或廠務氣體管路,該氣體源55將一預定壓力的氣體經由該氣體輸入管路51輸入該處理腔室27,該氣體排出管路52一端連接至少一該排氣岐管22,該氣體回收管路53一端連接該氣體輸入管路51,抑或直接連結至少一該進氣岐管21。
A
一氣體再處理裝置6,該氣體再處理裝置6包含一冷卻器61、至少一過濾器62、一加熱器63、一觸媒轉換器64以及一氣體回收器65,該氣體排出管路52另一端連接該氣體再處理裝置6,該處理腔室27內的氣體可經由氣體排出管路52流入該氣體再處理裝置6,藉由該冷卻器61來冷卻該氣體,透過至少一該過濾器62過濾流出該處理腔室27的氣體。藉由該加熱器63來加熱經由該氣體再處理裝置6流回該處理腔室27之氣體,並在加熱此氣體期間藉由該觸媒轉換器64處理該氣體,例如透過觸媒轉換器64利用催化反應將此氣體進行淨化(例如,將此氣體中的CO、HC、NO x等等成分轉換為對人體無害的氣體,如CO 2、H 2 O、N 2、O 2等等)。觸媒轉換器64可例如含有銠、鉑、鈀等等的金屬以作為催化劑。觸媒轉換器64可為二元觸媒轉換器、三元觸媒轉換器或二元觸媒轉換器與三元觸媒轉換器的組合。該氣體回收管路53另一端連接該氣體再處理裝置6,利用該氣體回收器65將該處理腔室27內的氣體吸入該氣體再處理裝置6,該吸入之氣體可直接排出該氣體再處理裝置6或經再處理後流回該處理腔室27,該氣體回收器65為一風扇。
A
參閱第3及第4圖所示(其中和第一實施例相同的元件使用相同的元件符號),本發明第二實施例係提供一種高溫烘箱的溫度調整設備,包括:一烘箱2,該烘箱2包含一烘箱腔體20、至少一進氣岐管21、至少一排氣岐管22、至少一加熱套24a及一腔門25,該烘箱腔體20內部形成一處理腔室27,該處理腔室27一側裝設至少一該進氣岐管21,另一側裝
設至少一該排氣岐管22,至少一該進氣岐管21外周貫設複數個進氣孔211,各該進氣孔211呈等間距排列設置,至少一該排氣岐管22外周貫設複數個排氣孔221,各該排氣孔221呈等間距排列設置,該烘箱腔體20外璧環設至少一該加熱套24a,至少一該加熱套24a對該烘箱腔體20外璧加熱,再經由該烘箱腔體20以熱輻射方式對該處理腔室27加熱,使該處理腔室27籠罩在高溫及高壓的工作環境中,該處理腔室27內之工作溫度介於攝氏20度(室溫)至攝氏1500度的範圍,工作壓力變化範圍介於1大氣壓(atm)至100大氣壓(atm)之間,在至少一該進氣岐管21內的氣體,經由各該進氣孔211噴出,擾動該處理腔室27內的氣體,並藉由至少一該排氣岐管將該處理腔室內的氣體排出而形成熱對流,促進該處理腔室27內部的溫度調節,有效提升氣體溫度分布的均勻性,該腔門25可垂直升降地設置於該烘箱腔體20底部,該腔門25係以氣壓式、液壓式或馬達驅動方式開啟、關閉,該腔門25內表面設置一處理框架28,該處理框架28上可放置待處理標的物,該待處理標的物可以是半導體晶片。
Referring to Figures 3 and 4 (where the same components as the first embodiment use the same component symbols), the second embodiment of the present invention provides a high-temperature oven temperature adjustment equipment, including: an
一氣體輸送單元5,該氣體輸送單元5包含一氣體輸入管路51、一氣體排出管路52、一氣體回收管路53及一氣體排放管路54,該氣體輸入管路51一端連接至少一該進氣岐管21,另一端連接一氣體源55或連結該氣體回收管路53,該氣體源55係為一空氣壓縮機或廠務氣體管路,該氣體源55將一預定壓力的氣體經由該氣體輸入管路51輸入該處理腔室27,該氣體排出管路52一端連接至少一該排氣岐管22,該氣體回收管路53一端連接該氣體輸入管路51,抑或直接連結至少一該進氣岐管21。
A
一氣體再處理裝置6,該氣體再處理裝置6包含一冷卻器61、至少一過濾器62、一加熱器63、一觸媒轉換器64以及一氣體回收器65,該氣體排出管路52另一端連接該氣體再處理裝置6,該處理腔室27內的氣體可經由氣體排出管路52流入該氣體再處理裝置6,藉由該冷卻器61來冷卻該氣體,透過至少一該過濾器62過濾流出該處理腔室27的氣體。藉由該加熱器63來加熱經由該氣體再處理裝置6流回該處理腔室27之氣體,並在加熱此氣體期間藉由該觸媒轉換器64處理該氣體。該氣體回收管路53另一端連接該氣體再處理裝置6,利用該氣體回收器65將該處理腔室27內的氣體吸入該氣體再處理裝置6,該吸入之氣體可直接排出該氣體再處理裝
置6或經再處理後流回該處理腔室27,該氣體回收器65為一風扇。
A
參閱第5及第6圖所示(其中和第一實施例相同的元件使用相同的元件符號),本發明第三實施例係提供一種高溫烘箱的溫度調整設備,包括:一烘箱2,該烘箱2包含一烘箱腔體20、至少一進氣岐管21、至少一排氣岐管22、至少一加熱元件24及一腔門25,該烘箱腔體20內部形成一處理腔室27,該處理腔室27一側裝設至少一該進氣岐管21,另一側裝設至少一該排氣岐管22,至少一該進氣岐管21外周貫設複數個進氣孔211,各該進氣孔211呈等間距排列設置,至少一該排氣岐管22外周貫設複數個排氣孔221,各該排氣孔221呈等間距排列設置,至少一該加熱元件24設置於該烘箱腔體20內璧與至少一該進氣岐管21旁側間,氣體在至少一該進氣岐管21內,經由各該進氣孔211噴出,讓至少一該加熱元件24以熱對流方式對該處理腔室27加熱,使該處理腔室27籠罩在高溫及高壓的工作環境中,該處理腔室27內之工作溫度介於攝氏20度(室溫)至攝氏1500度的範圍,工作壓力變化範圍介於1大氣壓(atm)至100大氣壓(atm)之間,該腔門25可垂直升降地設置於該烘箱腔體20底部,該腔門25係以氣壓式、液壓式或馬達驅動方式開啟、關閉,該腔門25內表面設置一處理框架28,該處理框架28上可放置待處理標的物,該待處理標的物可以是半導體晶片。
Referring to Figures 5 and 6 (where the same components as those in the first embodiment use the same component symbols), the third embodiment of the present invention provides a temperature adjustment device for a high-temperature oven, including: an
一氣體輸送單元5,該氣體輸送單元5包含一氣體輸入管路51、一氣體排出管路52、一氣體回收管路53及一氣體排放管路54,該氣體輸入管路51一端連接至少一該進氣岐管21,另一端連接一氣體源55或連結該氣體回收管路53,該氣體源55係為一空氣壓縮機或廠務氣體管路,該氣體源55將一預定壓力的氣體經由該氣體輸入管路51輸入該處理腔室27,該氣體排出管路52一端連接至少一該排氣岐管22,該氣體回收管路53一端連接該氣體輸入管路51,抑或直接連結至少一該進氣岐管21。
A
一氣體再處理裝置6,該氣體再處理裝置6包含一冷卻器61、至少一過濾器62、一加熱器63、一觸媒轉換器64以及一氣體回收器65,該氣體排出管路52另一端連接該氣體再處理裝置6,該處理腔室27內的氣體可經由氣體排出管路52流入該氣體再處理裝置6,藉由該冷卻器61來冷卻該氣體,透過至少一該過濾器62過濾流出該處理腔室27的氣體。藉由該加熱器63來加熱經由該氣體再處理裝置6流回該處理腔室27之氣體,
並在加熱此氣體期間藉由該觸媒轉換器64處理該氣體。該氣體回收管路53另一端連接該氣體再處理裝置6,利用該氣體回收器65將該處理腔室27內的氣體吸入該氣體再處理裝置6,該吸入之氣體可直接排出該氣體再處理裝置6或經再處理後流回該處理腔室27,該氣體回收器65為一風扇。
A
前述,該氣體排放管路54一端連接該氣體再處理裝置6,藉由排放該氣體再處理裝置6內之氣體至外界。
As mentioned above, one end of the
前述,當該處理腔室27的製程需求溫度較高時,可在該氣體離開該氣體再處理裝置6之後並且返回到該處理腔室27內之前,於該氣體回收管路53設置一加熱器66及一觸媒轉換器67,以進一步加熱及/或處理離開氣體再處理裝置6的氣體,俾能縮短在該處理腔室27內加熱氣體的時間及/或利用催化反應將此氣體進行進一步淨化。
As mentioned above, when the process requirement temperature of the
前述,該氣體夾雜氣態製程化學品流入各該排氣孔221,經由至少一排氣岐管22流出該處理腔室27外。
As mentioned above, the gas mixed with gaseous process chemicals flows into each of the exhaust holes 221 and flows out of the
前述,當該腔門25開啟時同步將該處理框架28移出該處理腔室27外,可輕易地放置、取出標的物,該腔門25關閉時同步將該處理框架28移入該處理腔室27內,有效節省人力作業成本。
As mentioned above, when the
本發明之高溫烘箱的溫度調整設備,藉由加熱器63來加熱經由該氣體再處理裝置6流回該處理腔室27之氣體,縮短在該處理腔室27內加熱氣體的時間,有效提升氣體的加熱效率。
The temperature adjustment equipment of the high-temperature oven of the present invention uses the
.本發明之高溫烘箱的溫度調整設備,利用氣體回收器65將該處理腔室27內的氣體吸入該氣體再處理裝置6,該吸入之氣體經再處理後流回該處理腔室27,達到氣體回收再利用之目的,有效降低生產成本。
The temperature adjustment equipment of the high-temperature oven of the present invention uses a
本發明之高溫烘箱的溫度調整設備,該處理腔室27內的氣體夾雜氣態製程化學品在製程完成後經由氣體排出管路52流入該氣體再處理裝置6,透過至少一該過濾器62濾除氣體中的製程化學品汙染物,可避免氣體回收再利用時該處理腔室27遭受汙染。
In the temperature adjustment equipment of the high-temperature oven of the present invention, the gas in the
本發明之高溫烘箱的溫度調整設備,該處理腔室27內的氣體可經由氣體排出管路52流入該氣體再處理裝置6,藉由該冷卻器61來冷卻該氣體,相較於直接在較高溫的該處理腔室27內進行氣體冷卻,且又無烘箱腔體20熱容量太大的影響,可有效提升氣體的冷卻效率。
In the temperature adjustment equipment of the high-temperature oven of the present invention, the gas in the
本發明之高溫烘箱的溫度調整設備,該氣體經由各該進氣孔211噴出,擾動該處理腔室27內的氣體,形成熱對流,促進該處理腔室27內部的溫度調節,有效提升氣體溫度分布的均勻性。
In the temperature adjustment device of the high-temperature oven of the present invention, the gas is ejected through each of the air inlet holes 211 to disturb the gas in the
本發明之高溫烘箱的溫度調整設備,提供熱輻射加熱方式來解決習知烘箱的問題,但因熱輻射所產生的熱與熱源距離的四次方呈反比而有加熱不均勻的問題,因而本發明更進一步如上所述導入了高壓氣體輔之以微量熱對流的解決方案。 The temperature adjustment equipment of the high-temperature oven of the present invention provides a heat radiation heating method to solve the problem of the conventional oven, but the heat generated by the heat radiation is inversely proportional to the fourth power of the heat source distance, and there is a problem of uneven heating. The invention further introduces the solution of introducing high pressure gas supplemented with trace heat convection as described above.
前文係針對本發明之較佳實施例為本發明之技術特徵進行具體之說明;惟,熟悉此項技術之人士當可在不脫離本發明之精神與原則下對本發明進行變更與修改,而該等變更與修改,皆應涵蓋於如下申請專利範圍所界定之範疇中。 The foregoing is a detailed description of the preferred embodiments of the present invention and the technical features of the present invention; however, those skilled in the art should make changes and modifications to the present invention without departing from the spirit and principle of the present invention. Such changes and modifications shall be covered in the scope defined by the scope of the following patent applications.
2‧‧‧烘箱 2‧‧‧Oven
5‧‧‧氣體輸送單元 5‧‧‧Gas delivery unit
6‧‧‧氣體再處理裝置 6‧‧‧Gas reprocessing device
20‧‧‧烘箱腔體 20‧‧‧Oven cavity
21‧‧‧進氣岐管 21‧‧‧Intake Manifold
211‧‧‧進氣孔 211‧‧‧Air Inlet
22‧‧‧排氣岐管 22‧‧‧Exhaust Manifold
221‧‧‧排氣孔 221‧‧‧Exhaust hole
23‧‧‧內框套 23‧‧‧Inner frame cover
231‧‧‧容置空間 231‧‧‧accommodating space
24‧‧‧加熱元件 24‧‧‧Heating element
25‧‧‧腔門 25‧‧‧cavity door
27‧‧‧處理腔室 27‧‧‧Processing chamber
28‧‧‧處理框架 28‧‧‧Processing framework
51‧‧‧氣體輸入管路 51‧‧‧Gas input pipeline
52‧‧‧氣體排出管路 52‧‧‧Gas discharge line
53‧‧‧氣體回收管路 53‧‧‧Gas recovery pipeline
54‧‧‧氣體排放管路 54‧‧‧Gas discharge pipeline
55‧‧‧氣體源 55‧‧‧Gas source
61‧‧‧冷卻器 61‧‧‧Cooler
62‧‧‧過濾器 62‧‧‧Filter
63‧‧‧加熱器 63‧‧‧Heater
64‧‧‧觸媒轉換器 64‧‧‧Catalyst converter
65‧‧‧氣體回收器 65‧‧‧Gas recovery device
66‧‧‧加熱器 66‧‧‧Heater
67‧‧‧觸媒轉換器 67‧‧‧Catalyst converter
Claims (16)
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CN201911085731.XA CN111271968A (en) | 2018-12-05 | 2019-11-08 | Temperature adjusting equipment of high-temperature oven |
US18/060,561 US20230090651A1 (en) | 2018-12-05 | 2022-11-30 | Temperature adjustment apparatus for high temperature oven |
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