TW202022172A - A split draft tube - Google Patents
A split draft tube Download PDFInfo
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- TW202022172A TW202022172A TW108144466A TW108144466A TW202022172A TW 202022172 A TW202022172 A TW 202022172A TW 108144466 A TW108144466 A TW 108144466A TW 108144466 A TW108144466 A TW 108144466A TW 202022172 A TW202022172 A TW 202022172A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
Description
本發明涉及半導體晶體生長領域,特別是涉及一種分體式導流筒。The present invention relates to the field of semiconductor crystal growth, in particular to a split flow guide tube.
在使用拉晶爐通過直拉法生長半導體單晶的過程中,導流筒是拉晶爐中控制熱場的重要部件,可以起到引導氬氣流及控制熱場溫度梯度的作用。目前,現有的導流筒結構已無法滿足單晶生長新工藝的不斷發展對於熱場分佈愈加精細的控制要求。此外,在直拉法生長單晶的過程中,導流筒的底部還常常會被坩堝中熔融的物料沾汙,為了避免影響單晶生長品質,當物料沾汙達到一定程度後一般會對整個導流筒進行更換,這就會額外增加設備的維護成本和時間。In the process of using a crystal pulling furnace to grow a semiconductor single crystal by the Czochralski method, the flow guide cylinder is an important part of the crystal pulling furnace to control the thermal field, and can play a role in guiding the argon gas flow and controlling the temperature gradient of the thermal field. At present, the existing guide tube structure can no longer meet the requirements of the continuous development of new single crystal growth processes for more and more precise control of the thermal field distribution. In addition, during the Czochralski method of growing single crystals, the bottom of the guide tube is often contaminated by the molten material in the crucible. In order to avoid affecting the quality of single crystal growth, when the material contamination reaches a certain level, it will generally affect the entire The guide tube is replaced, which will increase the maintenance cost and time of the equipment.
因此,有必要提出一種新的分體式導流筒,解決上述問題。Therefore, it is necessary to propose a new split guide tube to solve the above problems.
鑒於以上所述現有技術的缺點,本發明的目的在於提供一種分體式導流筒,用於解決現有技術中頻繁更換導流筒導致產能低下的問題。In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a split flow guide tube to solve the problem of low productivity caused by frequent replacement of the flow guide tube in the prior art.
為實現上述目的及其它相關目的,本發明提供了一種分體式導流筒,包括: 上筒體,包含導通所述上筒體的頂部和底部的上通孔; 下筒體,包含導通所述下筒體的頂部和底部的下通孔,所述下筒體的頂部可拆卸式連接於所述上筒體的底部,使所述上通孔和所述下通孔相連通並一同構成導流通孔。In order to achieve the above-mentioned objects and other related objects, the present invention provides a split-type deflector, including: The upper cylinder includes an upper through hole that connects the top and bottom of the upper cylinder; The lower cylinder includes a lower through hole that connects the top and bottom of the lower cylinder, and the top of the lower cylinder is detachably connected to the bottom of the upper cylinder, so that the upper through hole and the lower The through holes communicate with each other and together constitute a flow-through hole.
作為本發明的一種可選方案,所述下筒體的頂部內表面和所述上筒體的底部內表面連接部分為直紋曲面。As an optional solution of the present invention, the connecting portion between the top inner surface of the lower cylinder and the bottom inner surface of the upper cylinder is a straight curved surface.
作為本發明的一種可選方案,所述下筒體的頂部通過旋轉脫扣結構連接所述上筒體的底部。As an optional solution of the present invention, the top of the lower cylinder is connected to the bottom of the upper cylinder through a rotary tripping structure.
作為本發明的一種可選方案,所述下筒體的頂部通過銷接結構連接所述上筒體的底部。As an optional solution of the present invention, the top of the lower cylinder is connected to the bottom of the upper cylinder through a pin connection structure.
作為本發明的一種可選方案,所述導流通孔的徑向尺寸自上而下逐漸減小。As an optional solution of the present invention, the radial size of the flow-conducting hole gradually decreases from top to bottom.
作為本發明的一種可選方案,所述下筒體的高度占所述上筒體的高度的四分之一至二分之一。As an optional solution of the present invention, the height of the lower cylinder occupies one quarter to one half of the height of the upper cylinder.
作為本發明的一種可選方案,所述分體式導流筒的外壁的徑向尺寸自上而下逐漸減小。As an optional solution of the present invention, the radial dimension of the outer wall of the split guide tube gradually decreases from top to bottom.
作為本發明的一種可選方案,所述上筒體和所述下筒體的組成材料包含石墨。As an optional solution of the present invention, the constituent material of the upper cylinder and the lower cylinder includes graphite.
作為本發明的一種可選方案,所述下筒體為多個,分別具有不同的下底面構造,且可選地與所述上筒體的底部連接。As an optional solution of the present invention, there are a plurality of the lower cylinders, each having a different lower bottom surface structure, and is optionally connected to the bottom of the upper cylinder.
作為本發明的一種可選方案,所述下筒體的下底面包含平面。As an optional solution of the present invention, the lower bottom surface of the lower cylinder includes a flat surface.
作為本發明的一種可選方案,所述下筒體的下底面上形成有凹槽。As an optional solution of the present invention, a groove is formed on the lower bottom surface of the lower cylinder.
作為本發明的一種可選方案,所述凹槽包含環狀凹槽結構,且所述環狀凹槽結構的圓心位於所述導流通孔的軸線上。As an optional solution of the present invention, the groove includes an annular groove structure, and the center of the annular groove structure is located on the axis of the guide flow hole.
如上所述,本發明提供了一種分體式導流筒,通過引入可拆卸連接的上筒體和下筒體,針對不同類型的半導體單晶生長更換不同結構的下筒體;當下筒體出現物料沾汙時,只需要更換下筒體,減少了維護成本和時間,避免了因頻繁更換整個導流筒而降低設備產能的問題。As mentioned above, the present invention provides a split-type deflector cylinder. By introducing a detachable upper cylinder body and a lower cylinder body, the lower cylinder body of different structure is replaced for the growth of different types of semiconductor single crystals; materials appear in the lower cylinder body. When contaminated, only the lower cylinder needs to be replaced, which reduces maintenance costs and time, and avoids the problem of reducing equipment productivity due to frequent replacement of the entire deflector.
以下通過特定的具體實例說明本發明的實施方式,本領域技術人員可由本說明書所揭露的內容輕易地瞭解本發明的其它優點與功效。本發明還可以通過另外不同的具體實施方式加以實施或應用,本說明書中的各項細節也可以基於不同觀點與應用,在沒有背離本發明的精神下進行各種修飾或改變。The following describes the implementation of the present invention through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
請參閱圖1至圖18。需要說明的是,本實施例中所提供的圖示僅以示意方式說明本發明的基本構想,雖圖示中僅顯示與本發明中有關的組件而非按照實際實施時的元件數目、形狀及尺寸繪製,其實際實施時各元件的形態、數量及比例可為一種隨意的改變,且其元件佈局形態也可能更為複雜。 實施例一Please refer to Figure 1 to Figure 18. It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of the invention in a schematic way, although the illustrations only show components related to the invention instead of the number, shape, and shape of the components in actual implementation. For the size drawing, the shape, number, and ratio of each element can be changed at will during actual implementation, and the element layout form may be more complicated. Example one
請參閱圖1至圖3,本發明提供了一種分體式導流筒10,包括:Please refer to Figures 1 to 3, the present invention provides a split-
上筒體101,包含導通所述上筒體101的頂部和底部的上通孔103a;下筒體102,包含導通所述下筒體102的頂部和底部的下通孔103b,所述下筒體102的頂部可拆卸式連接於所述上筒體101的底部,使所述上通孔103a和所述下通孔103b相連通並一同構成導流通孔103。The
本發明所提供的分體式導流筒10由上筒體101和下筒體102共同構成,所述下筒體102的頂部連接所述上筒體101的底部,且這種連接是可拆卸式的,即所述下筒體102可以從所述上筒體101上拆卸分離。所述上筒體101包含導通其頂部和底部的上通孔103a,所述下筒體102包含導通其頂部和底部的下通孔103b,所述上通孔103a和所述下通孔103b共同組成導流通孔103。如圖1所示,是本發明的一個實施例所提供的所述分體式導流筒10的橫截面示意圖,圖2是其俯視圖,圖3是其仰視圖。The
作為示例,請參閱圖1及圖4至圖6,所述下筒體102的頂部通過旋轉脫扣結構104連接所述上筒體101的底部。本實施例中通過旋轉脫扣結構104實現所述上筒體101與所述下筒體102的可拆卸連接。如圖1所示,在所述下筒體102的頂部兩側成對設置有卡扣104a,其頂端設有向所述分體式導流筒10軸線方向伸出的突出部,所述突出部嵌入並固定於所述上筒體101上。具體地,如圖4至圖6,是所述下筒體102通過所述旋轉脫扣結構104連接於所述上筒體101的過程。在所述下筒體102的頂部設置有卡扣104a,所述卡扣104a的頂端設有向所述分體式導流筒10軸線方向伸出的突出部,在所述上筒體101的底部對應位置設置有卡槽104b,所述卡槽104b分為位於左側的嵌入槽及位於右側的固定槽,所述嵌入槽的深度可以容納包含所述突出部的所述卡扣104a進入所述嵌入槽中,所述固定槽在其頂端的深度可以容納所述卡扣104a的突出部嵌入,而其他部位的深度遠小於所述突出部的嵌入深度。在圖4中,將所述上筒體101和所述下筒體102對準並貼合,其中所述卡扣104a對準所述卡槽104b的所述嵌入槽。在圖5中,所述卡扣104a向上進入所述卡槽104b的所述嵌入槽中,從俯視方向看逆時針轉動所述下筒體102。在圖6中,通過轉動所述下筒體102,所述卡扣104a從所述嵌入槽移動到所述固定槽中,由於所述固定槽在其頂端的深度可以容納所述卡扣104a的突出部嵌入,而其他部位的深度遠小於所述突出部的嵌入深度,所述卡扣104a通過所述突出部固定於所述固定槽中,從而實現了所述下筒體102與所述上筒體101的可拆卸式連接。當需要拆卸所述下筒體102時,只需從俯視方向看順時針轉動所述下筒體102至所述嵌入槽中,就可向下移動並拆卸所述下筒體102。需要指出的是,本實施例中的所述旋轉脫扣結構成對設置於所述分體式導流筒10上相對的兩側,而在本發明的其他實施例中,所述旋轉脫扣結構的數量還可以大於兩個,並等間距環繞分佈於所述上筒體101與所述下筒體102的連接處。所述旋轉脫扣結構也不限於本實施例中所述設置於所述分體式導流筒10的外壁,在其他實施方案中,也可以設置於所述分體式導流筒10的內壁。此外,除了本實施例所採用的所述旋轉脫扣結構外,在本發明的其他實施方案中,所述上筒體101與所述下筒體102的可拆卸連接還可以採用銷接、螺紋連接、直接卡扣(非旋轉)等其他可能的連接方式。As an example, please refer to FIGS. 1 and 4 to 6, the top of the
作為示例,如圖1所示,所述下筒體102的頂部內表面和所述上筒體101的底部內表面連接部分為直紋曲面。所述直紋曲面的定義為可以由一條直線通過連續運動構成的曲面,即所述直紋曲面是光滑平順的,不會出現曲折突變。在本實施例中,在所述下筒體102的頂部內表面和所述上筒體101的底部內表面的連接部位採用直紋曲面,也即是說連接部位的形貌是光滑的,不會對所述導流通孔103內的氣流流動造成擾動,確保了晶體生長過程中氬氣氣流不會出現湍流,晶體可以穩定地生長。As an example, as shown in FIG. 1, the connecting portion between the top inner surface of the
作為示例,如圖1所示,所述導流通孔103的徑向尺寸自上而下逐漸減小。在本發明中,所述導流通孔103的徑向尺寸自上而下逐漸減小指的是形成所述導流通孔103的導流筒內壁的形貌是光滑漸變的,且自上而下逐漸減小。所述導流通孔103由所述上通孔103a和所述下通孔103b所共同構成。在拉晶爐生長單晶的過程中,作為保護氣體的氬氣一般從爐體上方通入,通過徑向尺寸自上而下逐漸減小的漏斗狀設計,可以將氬氣氣流集中于單晶的生長介面附近,在保護單晶生長的同時,還可以通過冷卻,提高生長介面附近的溫度梯度,加快單晶的生長速度。此外,考慮到導流筒內壁上如果存在突出結構可能會引起湍流,造成晶體生長失穩,引入光滑漸變的內壁形貌也確保了氬氣氣流流動平穩而不會出現湍流。可選地,所述導流通孔呈上寬下窄的倒圓臺形狀,通過引入倒圓臺形狀的漸變光滑的側壁,避免了所述導流筒在引導氬氣氣流時可能產生的湍流,使氬氣氣流平穩可控地流向晶體生長介面,以利於提高單晶生長品質。As an example, as shown in FIG. 1, the radial size of the flow-conducting
作為示例,如圖1所示,所述下筒體102的高度占所述上筒體101的高度的四分之一至二分之一。可選地,所述下筒體102的高度占所述上筒體101的高度的三分之一。在設計所述下筒體102占整個所述分體式導流筒10的比例時,一方面希望盡可能減少所述下筒體102的占比,以減少更換下筒體帶來的部件維護成本;另一方面,也要考慮物料沾汙的分佈範圍,盡可能地將會被物料沾汙到的部位設計入所述下筒體102所占範圍中,以此僅通過更換所述下筒體102就可去除筒體上的物料沾汙。在本實施例中,選取所述下筒體102的高度占所述上筒體101的高度的三分之一。As an example, as shown in FIG. 1, the height of the
作為示例,如圖1所示,所述分體式導流筒10的外壁的徑向尺寸自上而下逐漸減小。雖然影響單晶生長的熱場因素主要由所述分體式導流筒10內部的結構所決定,但所述分體式導流筒10的外壁形貌也對爐體內的對流條件具有一定影響。在本實施例中,所述分體式導流筒10的外壁的徑向尺寸自上而下逐漸減小。可選的,所述分體式導流筒10的內壁與外壁徑向尺寸在同一高度的差值是固定的,即所述分體式導流筒10在各處的筒壁厚度是相同的。As an example, as shown in FIG. 1, the radial dimension of the outer wall of the
作為示例,所述上筒體101和所述下筒體102的組成材料包含石墨。石墨具有耐高溫、導熱性能強、抗腐蝕性能好及使用壽命長等特點,是一種理想的用於高溫爐體的部件材料。在本發明的其他實施例中,所述組成材料還包括碳化矽、陶瓷或石英等其他耐高溫材料。As an example, the constituent materials of the
作為示例,如圖1至圖3所示,在所述上筒體101外壁的頂部兩側的相對位置還設有一對掛鉤結構101a。所述掛鉤結構101a可以用來連接升降導杆,所述升降導杆可以通過所述掛鉤結構101a固定所述分體式導流筒10並控制所述分體式導流筒10升降,調節所述分體式導流筒10在爐體內的相對位置。As an example, as shown in Figs. 1 to 3, a pair of
作為示例,所述下筒體102的下底面包含平面。如圖7所示,是採用下底面為平面結構的所述分體式導流筒10在單晶生長時的示意圖。在生長用於磊晶基板的單晶矽時,一般要求加強單晶生長介面附近的散熱,因此將所述下筒體102的下底面設計為平面結構,以利於對流散熱。在圖7中,從上方通入的氬氣氣流在所述分體式導流筒10的引導下向下方流動,而從坩堝001中的物料液面處會由於加熱產生向上的熱對流,兩者在晶錠002的生長介面附近相遇,並向所述分體式導流筒10的週邊擴散,即所述氬氣氣流會帶走從物料液面處對流的部分熱量。當所述下筒體102的下底面設計為平面結構時,所述氬氣氣流更容易從所述下筒體102的下底面擴散到所述分體式導流筒10的週邊,加強了熱場的散熱,進而提高了生長介面附近的溫度梯度,以利於用於磊晶基板片的單晶矽的生長。
實施例二As an example, the lower bottom surface of the
如圖8和圖9所示,本實施例所提供的分體式導流筒20由上筒體201和下筒體202共同構成,所述下筒體202的頂部通過旋轉脫扣結構204連接於所述上筒體201的底部。上通孔203a和下通孔203b相連通並一同構成導流通孔203。本實施例中的方案與實施例一的不同之處在於,所述下筒體202的下底面上形成有具有儲熱作用的凹槽202a。所述凹槽202包含環狀凹槽結構,且所述環狀凹槽結構的圓心位於所述導流通孔203的軸線上。圖8是所述分體式導流筒20的橫截面示意圖,圖9是其仰視圖。As shown in Figures 8 and 9, the
如圖10所示,是採用下底面上形成有凹槽202a的所述分體式導流筒10在單晶生長時的示意圖。在生長用於拋光片的單晶矽時,需要減少單晶生長介面附近的散熱,因此在所述下筒體202的下底面上形成有凹槽202a,通過凹槽結構進行儲熱,從而減少散熱。在圖10中,從上方通入的氬氣氣流在所述分體式導流筒20的引導下向下方流動,而從坩堝001中的物料液面處會由於加熱產生向上的熱對流,兩者在晶錠002的生長介面附近相遇,並沿著所述分體式導流筒20的底部向週邊擴散,即所述氬氣氣流會帶走從物料液面處對流的部分熱量,而通過在所述下筒體202的下底面上形成有凹槽202a,則氣流在通過所述凹槽202a會有部分熱量停留並儲存於所述凹槽202a中,這就減少了整個系統的散熱,使晶體生長介面附近可以保留更多熱量,以利於用於拋光片的單晶矽生長。在本實施例中,所述凹槽202a包含一圈環狀凹槽結構,在本發明的其他實施例中,所述凹槽202a還可以採用多圈具有相同圓心的環狀凹槽結構,或者採用以其他任何可能的幾何圖案排布在所述下筒體202的下底面上的凹槽結構。
實施例三As shown in FIG. 10, it is a schematic diagram of the
作為示例,所述下筒體為多個,分別具有不同的下底面構造,且可選地與所述上筒體的底部連接。在實際生產過程中,可能會出現根據不同的晶體生長需求,更換具有不同下底面結構的導流筒。本實施例所實施的方案與實施例一及實施例二的不同之處在於,在一套本發明所述的分體式導流筒中,一個上筒體對應設置多個下筒體,所述下筒體根據拉晶爐所要生長的不同類型的單晶對應設置。例如,用於磊晶基板片的單晶矽的生長對應設置如實施例一中所述的下底面為平面結構的下筒體,用於拋光片的單晶矽的生長對應設置如實施例二中所述的底面具有環狀凹槽結構的下筒體。在所述拉晶爐生長不同類型的單晶時,針對性地通過拆卸方式更換對應的下筒體;設置多個同一類下筒體,在所述下筒體上所沾汙的物料達到一定程度後,也可以及時更換所述下筒體。本實施例不但減少了筒體更換的部件成本和維護時間,也減少了更換後對筒體進行烘烤等復機措施所耗費的時間。 實施例四As an example, there are a plurality of lower cylinders, each having a different lower bottom surface structure, and optionally connected to the bottom of the upper cylinder. In the actual production process, it may happen that according to different crystal growth requirements, the guide tube with a different bottom surface structure may be replaced. The difference between the scheme implemented in this embodiment and the first and second embodiments is that, in a set of the split guide tube according to the present invention, an upper tube body is provided with a plurality of lower tube bodies corresponding to each other. The barrel is correspondingly arranged according to different types of single crystals to be grown in the crystal pulling furnace. For example, the growth of monocrystalline silicon used for epitaxial wafers is correspondingly set up as described in the first embodiment. The lower bottom surface is a flat structure of the lower cylinder, and the growth of monocrystalline silicon used for polishing wafers is correspondingly set up as the second embodiment. The bottom surface of the lower cylinder has an annular groove structure. When the crystal pulling furnace grows different types of single crystals, the corresponding lower cylinder is replaced by disassembly; a plurality of lower cylinders of the same type are set, and the material contaminated on the lower cylinder reaches a certain level. After that, the lower cylinder can also be replaced in time. This embodiment not only reduces the component cost and maintenance time of the cylinder body replacement, but also reduces the time consumed by the re-machine measures such as baking the cylinder body after the replacement. Example four
如圖11至圖12所示,是本實施例所提供的一種分體式導流筒30,其中,圖11是本實施例所提供的一種分體式導流筒30的橫截面示意圖,圖12是圖11中AA’處的截面示意圖。本實施例和實施例一的不同之處在於,所述分體式導流筒30採用銷接方式進行連接,下筒體302的頂部通過銷接結構305連接上筒體301的底部。具體地,所述上筒體301的底部嵌套於下筒體302的頂部週邊,所述銷接結構305設有多個銷孔,貫穿所述上筒體301和所述下筒體302。圓柱銷305a插設于銷孔中,並固定上筒體301和下筒體302。如圖12所示,本實施例中共成對設置了2個圓柱銷305a。當然,在本發明的其他實施方案中,所述圓柱銷305a的數量及佈局可以根據實際需要靈活變更。如圖13至圖14所示,是本實施例中上筒體301和下筒體302的銷接過程。在圖13中,所述下筒體302的頂部設置有若干個盲孔305b,所述上筒體301的底部設置有若干個與所述盲孔305b的數量及位置對應的通孔305c,且所述上筒體301的底部可以緊密嵌套於所述下筒體302的頂部外側。在圖14中,所述上筒體301的底部嵌套於所述下筒體302的頂部,且所述盲孔305b連通所述通孔305c,並共同形成銷孔。在所述銷孔中插入所述圓柱銷305a,以形成穩固的銷接結構305,如圖11所示。需要指出的是,本實施例中,所述下筒體302的頂部設置的是所述盲孔305b,在本發明的其他實施案例中,也可以改為通孔,這並不影響所述銷接結構305的實施。
實施例五As shown in Figures 11 to 12, there is a
如圖15至圖16所示,是本實施例所提供的一種分體式導流筒40,其中,圖15是本實施例所提供的一種分體式導流筒40的橫截面示意圖,圖16是圖15中AA’處的截面示意圖。本實施例和實施例一的不同之處在於,所述分體式導流筒40採用銷接方式進行連接,下筒體402的頂部通過銷接結構405連接上筒體401的底部;而與實施例四的不同之處在於,本實施例中,所述下筒體402的頂部嵌套於所述上筒體401的底部週邊。所述銷接結構405設有多個銷孔,貫穿所述上筒體401和所述下筒體402。圓柱銷405a插設于銷孔中,並固定上筒體401和下筒體402。如圖12所示,本實施例中共成對設置了2個圓柱銷405a。當然,在本發明的其他實施方案中,所述圓柱銷405a的數量及佈局可以根據實際需要靈活變更。如圖17至圖18所示,是本實施例中上筒體401和下筒體402的銷接過程。在圖17中,所述下筒體402的頂部設置有若干個通孔405c,所述上筒體401的底部設置有若干個與所述通孔405c的數量及位置對應的盲孔405b,且所述下筒體402的頂部可以緊密嵌套於所述上筒體401的底部外側。在圖18中,所述上筒體401的底部嵌套於所述下筒體402的頂部,且所述盲孔405b連通所述通孔405c,並共同形成銷孔。在所述銷孔中插入所述圓柱銷405a,以形成穩固的銷接結構405,如圖15所示。需要指出的是,本實施例中,所述上筒體401的底部設置的是所述盲孔305b,在本發明的其他實施案例中,也可以改為通孔,這並不影響所述銷接結構305的實施。As shown in Figures 15 to 16, it is a split
綜上所述,本發明提供了一種分體式導流筒,包括:上筒體,包含導通所述上筒體的頂部和底部的上通孔;下筒體,包含導通所述下筒體的頂部和底部的下通孔,所述下筒體的頂部可拆卸式連接於所述上筒體的底部,使所述上通孔和所述下通孔相連通並一同構成導流通孔。本發明所提供的分體式導流筒,通過引入可拆卸連接的上筒體和下筒體,針對不同類型的半導體單晶更換不同結構的下筒體;當下筒體出現物料沾汙時,只需要更換下筒體,減少了維護成本和時間,避免了因頻繁更換整個導流筒而降低設備產能的問題。In summary, the present invention provides a split diversion tube, including: an upper tube body, including upper through holes that communicate with the top and bottom of the upper tube body; There are lower through holes at the top and bottom, and the top of the lower cylinder is detachably connected to the bottom of the upper cylinder, so that the upper through hole and the lower through hole are connected to form a flow-through hole. The split diversion tube provided by the present invention introduces a detachable upper tube body and a lower tube body to replace the lower tube body with different structures for different types of semiconductor single crystals; when the lower tube body is contaminated with materials, only The lower cylinder needs to be replaced, reducing maintenance costs and time, and avoiding the problem of reducing equipment productivity due to frequent replacement of the entire deflector.
本發明已經利用上述實施例進行了說明,但應當理解的是,上述實施例只是用於舉例和說明的目的,而非意在將本發明限制於所描述的實施例範圍內。此外本領域技術人員可以理解的是,本發明並不局限於上述實施例,根據本發明的教導還可以做出更多種的變型和修改,這些變型和修改均落在本發明所要求保護的範圍以內。本發明的保護範圍由附屬的申請專利範圍及其等效範圍所界定。The present invention has been described using the above-mentioned embodiments, but it should be understood that the above-mentioned embodiments are only for the purpose of illustration and description, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above-mentioned embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications fall under the protection of the present invention. Within the range. The scope of protection of the present invention is defined by the scope of the attached patent application and its equivalent scope.
001:坩堝
002:晶錠
10、20、30、40:分體式導流筒
101、201、301、401:上筒體
101a:掛鉤結構
102、202、302、402:下筒體
103、203:導流通孔
103a、203a:上通孔
103b、203b:下通孔
104、204:轉脫扣結構
104a:卡扣
104b:卡槽
202a:凹槽
305、405:銷接結構
305a、405a:圓柱銷
305b、405b:盲孔
305c、405c:通孔
001: Crucible
002:
本發明的下列附圖在此作為本發明的一部分用於理解本發明。附圖中示出了本發明的實施例及其描述,用來解釋本發明的原理。 附圖中:The following drawings of the present invention are used here as a part of the present invention for understanding the present invention. The accompanying drawings show the embodiments of the present invention and the description thereof to explain the principle of the present invention. In the attached picture:
圖1顯示為本發明實施例一中提供的分體式導流筒的橫截面示意圖。Figure 1 shows a schematic cross-sectional view of a split guide tube provided in the first embodiment of the present invention.
圖2顯示為本發明實施例一中提供的分體式導流筒的俯視圖。FIG. 2 shows a top view of the split guide tube provided in the first embodiment of the present invention.
圖3顯示為本發明實施例一中提供的分體式導流筒的仰視圖。Figure 3 shows a bottom view of the split guide tube provided in the first embodiment of the present invention.
圖4至圖6顯示為本發明實施例一中提供的分體式導流筒的下筒體與上筒體通過旋轉脫扣結構連接的過程示意圖。4 to 6 are schematic diagrams showing the process of connecting the lower cylinder body and the upper cylinder body of the split guide tube provided in the first embodiment of the present invention through a rotary tripping structure.
圖7顯示為本發明實施例一中提供的分體式導流筒在單晶生長時的示意圖。FIG. 7 is a schematic diagram of the split guide tube provided in the first embodiment of the present invention during single crystal growth.
圖8顯示為本發明實施例二中提供的分體式導流筒的橫截面示意圖。FIG. 8 is a schematic cross-sectional view of the split guide tube provided in the second embodiment of the present invention.
圖9顯示為本發明實施例二中提供的分體式導流筒的仰視圖。Fig. 9 shows a bottom view of the split guide tube provided in the second embodiment of the present invention.
圖10顯示為本發明實施例二中提供的分體式導流筒在單晶生長時的示意圖。FIG. 10 is a schematic diagram of the split guide tube provided in the second embodiment of the present invention during single crystal growth.
圖11顯示為本發明實施例三中提供的分體式導流筒的橫截面示意圖。Figure 11 is a schematic cross-sectional view of the split guide tube provided in the third embodiment of the present invention.
圖12顯示為本發明實施例三中提供的分體式導流筒在圖11中AA’處的截面示意圖。Fig. 12 is a schematic cross-sectional view of the split guide tube provided in the third embodiment of the present invention at AA' in Fig. 11.
圖13至圖14顯示為本發明實施例三中提供的分體式導流筒的下筒體與上筒體通過銷接結構連接的過程示意圖。13 to 14 are schematic diagrams showing the process of connecting the lower cylinder body and the upper cylinder body of the split guide tube provided in the third embodiment of the present invention through a pin connection structure.
圖15顯示為本發明實施例四中提供的分體式導流筒的橫截面示意圖。Figure 15 is a schematic cross-sectional view of the split guide tube provided in the fourth embodiment of the present invention.
圖16顯示為本發明實施例四中提供的分體式導流筒在圖15中AA’處的截面示意圖。Fig. 16 is a schematic cross-sectional view of the split guide tube provided in the fourth embodiment of the present invention at AA' in Fig. 15.
圖17至圖18顯示為本發明實施例四中提供的分體式導流筒的下筒體與上筒體通過銷接結構連接的過程示意圖。FIGS. 17 to 18 are schematic diagrams showing the process of connecting the lower cylinder body and the upper cylinder body of the split guide tube provided in the fourth embodiment of the present invention through a pin connection structure.
10:分體式導流筒 10: Split guide tube
101:上筒體 101: Upper cylinder
101a:掛鉤結構 101a: hook structure
102:下筒體 102: lower cylinder
103:導流通孔 103: Guiding through holes
103a:上通孔 103a: upper through hole
103b:下通孔 103b: Lower through hole
104:轉脫扣結構 104: Turn trip structure
104a:卡扣 104a: buckle
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