CN219861678U - Water-cooling heat shield with annular magnetic field generating device - Google Patents
Water-cooling heat shield with annular magnetic field generating device Download PDFInfo
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- CN219861678U CN219861678U CN202321357079.4U CN202321357079U CN219861678U CN 219861678 U CN219861678 U CN 219861678U CN 202321357079 U CN202321357079 U CN 202321357079U CN 219861678 U CN219861678 U CN 219861678U
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- 238000001816 cooling Methods 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 239000000110 cooling liquid Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 238000007789 sealing Methods 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 230000000712 assembly Effects 0.000 claims description 7
- 238000000429 assembly Methods 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 230000005347 demagnetization Effects 0.000 abstract 1
- 239000000155 melt Substances 0.000 description 24
- 239000012535 impurity Substances 0.000 description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 14
- 239000002826 coolant Substances 0.000 description 13
- 239000012530 fluid Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000979 retarding effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
Abstract
The utility model relates to the technical field of auxiliary equipment of a single crystal furnace, in particular to a water-cooling heat shield with an annular magnetic field generating device, which comprises a magnetic field generating device, an inner shell and an outer shell, wherein a lifting channel is arranged on the inner shell, a heat exchange space is arranged between the inner shell and the outer shell, a cooling liquid inlet and a cooling liquid outlet are arranged on the inner shell, the magnetic field generating device comprises an electromagnet assembly which is in an annular structure and is positioned in the heat exchange space, and a magnetic field control device which is positioned outside the heat exchange space, the electromagnet assembly is positioned at the lower side of the heat exchange space and is close to one side of the lifting channel, the electromagnet assembly is vertically arranged along the extending direction of the lifting channel, and a sealing layer is arranged at the outer side of the electromagnet assembly. According to the utility model, the electromagnet assembly is arranged in the heat exchange space without occupying space, the heat exchange space is circularly cooled by using the cooling liquid, and the demagnetization or damage of the electromagnet assembly caused by the high temperature of the silicon solution is avoided.
Description
Technical Field
The utility model relates to the technical field of auxiliary equipment of a single crystal furnace, in particular to a water-cooling heat shield with an annular magnetic field generating device.
Background
The Czochralski method is the most widely applied technology for producing monocrystalline silicon at present, a water-cooling heat shield is auxiliary equipment of a monocrystalline furnace for realizing heat transfer between materials between two or more fluids with different temperatures, heat is transferred from a fluid with higher temperature to a fluid with lower temperature, the temperature of the fluid reaches the index specified by a process, when the Czochralski method is used for growing monocrystalline silicon, high-purity solid polycrystalline silicon raw materials are melted in a crucible of the monocrystalline furnace to form melt, a seed crystal is lowered by a seed crystal lifting mechanism to be contacted with the melt in a molten state in a rotary crucible, then the seed crystal is rotationally lifted from a lifting channel of the water-cooling heat shield according to a certain technological method, and the melt is solidified around the seed crystal to form a monocrystalline silicon rod.
When the conventional Czochralski method is used for growing crystals, a heating mode of surrounding the crucible by a heater is adopted, and because of non-uniformity of a temperature field, heat convection of the melt generated by a temperature gradient exists in the melt in the crucible, vortex flow is easy to occur in the melt, the shape of a crystal-melt interface, the uniformity of the temperature gradient and the distribution of impurity concentration are difficult to control, and balance of point defects is difficult to reach.
In order to comprehensively improve the impurity distribution and the material characteristics related to the impurities of the Czochralski single crystal, an external magnetic field is introduced into a melt space during crystal growth, and the conductive melt is blocked by Lorentz force during movement convection in the magnetic field, thus the method is a magnetic field Czochralski single crystal technology.
As disclosed in chinese patent document CN113638037a, in the method for preparing single crystal silicon and single crystal furnace, the magnetic field generator is mounted on the periphery of the furnace body, so that the magnetic field generator is far away from the silicon solution and the pulling channel in the crucible, and meanwhile, the magnetic field generator has a relatively large structure and needs to occupy a certain volume.
Therefore, there is a need to develop a monocrystalline silicon auxiliary device that does not occupy space and has a magnetic flux range that can cover the pulling channel and the silicon solution in the crucible, so as to improve the use experience of the monocrystalline furnace.
Disclosure of Invention
Aiming at the technical problems that the prior magnetic field generator is far away from silicon solution and a lifting channel in a crucible, the magnetic field generator has a huge structure and needs to occupy a certain volume, the utility model adopts the technical scheme that:
the utility model provides a water-cooling heat shield with cyclic annular magnetic field generating device, includes magnetic field generating device, is located inner shell, the shell of silicon liquid level upside, the inner shell is equipped with the lift passageway that supplies the silicon crystal bar to pass through, the inner shell with be equipped with the heat transfer space between the shell, be equipped with on the inner shell respectively with coolant liquid entry and the coolant liquid export of heat transfer space intercommunication, magnetic field generating device is including being located be annular structure's electromagnet assembly in the heat transfer space and be located the magnetic field controlling means outside the heat transfer space, electromagnet assembly is located heat transfer space downside and be close to one side of lift passageway, electromagnet assembly is followed the vertical setting of lift passageway extending direction, the electromagnet assembly outside is equipped with the sealing layer.
According to some embodiments of the utility model, the magnetic field generating device further comprises a conductive member connected between the magnetic field control device and the electromagnet assembly, a sealing layer is arranged on the outer side of the conductive member, and the conductive member extends from the inside of the heat exchange space to the outside of the heat exchange space along the cooling liquid inlet and/or the cooling liquid outlet.
According to some embodiments of the utility model, the magnetic field control device is provided with a magnetic field strength detection unit.
According to some embodiments of the utility model, the electromagnet assembly is provided with a plurality of electromagnet assemblies and is distributed along the heat exchange space to form an annular structure.
According to some embodiments of the utility model, the inner housing comprises an inner sloped section and an inner constant section, the outer housing comprises a first outer constant section, a first outer sloped section, and a second outer constant section, and the electromagnet assembly is located between the inner constant section and the second outer constant section.
According to some embodiments of the utility model, the inner inclined section gradually decreases from top to bottom, and the inner diameter of the bottom end of the inner inclined section is equal to the inner diameter of the inner constant section.
According to some embodiments of the utility model, the first outer inclined section gradually decreases from top to bottom, and an inner diameter of a bottom end of the first outer inclined section is equal to an inner diameter of the second outer constant section.
According to some embodiments of the utility model, the inclination of the inner inclined section is equal to the inclination of the first outer inclined section, and the height of the electromagnet assembly is close to the height of the inner constant section and/or the second outer constant section.
According to some embodiments of the utility model, a lower flange for sealing the bottom of the inner shell and the bottom of the outer shell is arranged between the bottom of the inner shell and the bottom of the outer shell, and a cooling gap is formed between the bottom of the electromagnet assembly and the upper side of the lower flange.
According to some embodiments of the utility model, the coolant inlet is a multi-cornered elongated duct, the end of the coolant inlet is connected to the heat exchanging space, the head end of the coolant inlet extends upward along the inner housing shaft, the coolant outlet is a multi-cornered elongated duct, the end of the coolant outlet is connected to the heat exchanging space, and the head end of the coolant outlet extends upward along the inner housing shaft.
The beneficial effects of the utility model are as follows:
1. according to the utility model, the magnetic field structure is changed through the electromagnet assembly, lorentz force opposite to the movement direction of the melt is generated, the viscosity of the molten silicon is increased, the thermal convection of fluid is retarded, the impurity content in the silicon liquid is reduced, the electromagnet assembly which is arranged at the periphery of the lifting channel is rotated in the production process of the crystal bar, the magnetic field intensity is improved, the rotation speed of the crystal bar is further accelerated, the crystal pulling speed is further accelerated, the crystal pulling time is shortened, the magnetic field control device is utilized to adjust the lifting speed of the crystal bar according to the field condition, so that a product with better quality is obtained, the electromagnet assembly which is provided with a sealing layer and is annularly arranged is positioned at one side close to the lifting channel, the magnetic line range of the electromagnet assembly can cover the lifting channel, and the melt generates Lorentz force opposite to the movement direction of the melt in the rotation and upward movement process, so that the impurity which is segregated from the crystal-melt interface is more quickly and evenly distributed by all the silicon melt, and the impurity distribution of the grown crystal is not easy to be enriched below the crystal-melt interface, thereby improving the axial and radial uniformity of the impurity distribution of the crystal is improved.
2. According to the utility model, the electromagnet assembly with the sealing layer is arranged in the heat exchange space without occupying space, and meanwhile, the cooling liquid is used for circularly cooling the heat exchange space, so that the electromagnet assembly is prevented from being demagnetized or damaged due to high temperature of the silicon solution, and the service life of the electromagnet assembly is prolonged.
Drawings
Fig. 1 is a schematic view of a water-cooled heat shield with an annular magnetic field generating device according to the present utility model.
Fig. 2 is a schematic diagram of a water-cooled heat shield with an annular magnetic field generator according to the present utility model.
Detailed Description
Embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.
The utility model provides a water-cooling heat shield with cyclic annular magnetic field generating device as shown in fig. 1 and 2, includes magnetic field generating device, is located inner shell 1, the shell 2 of silicon liquid level upside, inner shell 1 is equipped with the lift passageway 7 that supplies the silicon crystal bar to pass through, inner shell 1 with be equipped with heat transfer space 3 between the shell 2, be equipped with on the inner shell 1 respectively with cooling liquid entry 4 and cooling liquid outlet 5 of heat transfer space 3 intercommunication, magnetic field generating device is including being located be annular structure's electromagnet assembly 6 in heat transfer space 3 and be located the magnetic field controlling means outside the heat transfer space 3, electromagnet assembly 6 is located heat transfer space 3 downside and be close to one side of lift passageway 7, electromagnet assembly 6 is followed lift passageway 7 extending direction is vertical to be set up, the electromagnet assembly 6 outside is equipped with the sealing layer. Further, the annular electromagnet assembly is simple in structure, low in cost and suitable for being installed in a heat exchange space.
After the polycrystalline silicon material is heated and melted to form a melt, the melt can conduct electricity, at the moment, the conductive melt moves in a magnetic field applied by the electromagnet assembly, and current microelements in the melt can cut magnetic lines of force, so that the magnetic field applied by the electromagnet assembly applies ampere force to the melt, and the direction of the ampere force is opposite to the moving direction of the current microelements, so that the heat convection of fluid can be blocked, the scouring of the fluid to the inner wall of the crucible is reduced, the impurity content in silicon liquid is reduced, and the overall quality balance of crystals is effectively improved.
According to the utility model, the magnetic field structure is changed through the electromagnet assembly, lorentz force opposite to the movement direction of the melt is generated, the viscosity of the molten silicon is increased, the thermal convection of fluid is retarded, the impurity content in the silicon liquid is reduced, the electromagnet assembly which is arranged at the periphery of the lifting channel is rotated in the production process of the crystal bar, the magnetic field intensity is improved, the rotation speed of the crystal bar is further accelerated, the crystal pulling speed is further accelerated, the crystal pulling time is shortened, the magnetic field control device is utilized to adjust the lifting speed of the crystal bar according to the field condition, so that a product with better quality is obtained, the electromagnet assembly which is provided with a sealing layer and is annularly arranged is positioned at one side close to the lifting channel, the magnetic line range of the electromagnet assembly can cover the lifting channel, and the melt generates Lorentz force opposite to the movement direction of the melt in the rotation and upward movement process, so that the impurity which is segregated from the crystal-melt interface is more quickly and evenly distributed by all the silicon melt, and the impurity distribution of the grown crystal is not easy to be enriched below the crystal-melt interface, thereby improving the axial and radial uniformity of the impurity distribution of the crystal is improved.
According to the utility model, the electromagnet assembly with the sealing layer is arranged in the heat exchange space without occupying space, and meanwhile, the cooling liquid is used for circularly cooling the heat exchange space, so that the electromagnet assembly is prevented from being demagnetized or damaged due to high temperature of the silicon solution, and the service life of the electromagnet assembly is prolonged.
Compared with the existing magnetic field generator with a huge structure, the electromagnet assembly is closer to the lifting channel, and the electromagnet assembly is adjusted by the magnetic field control device, so that the same effect of the existing magnetic field generator can be achieved by using the electromagnet assembly with a relatively small volume.
Optionally, in order to better cover the pull-up channel with the magnetic field line range of the electromagnet assembly, the axial direction of the electromagnet assembly is parallel to the axial direction of the pull-up channel.
A water-cooled heat shield with an annular magnetic field generating device as shown in fig. 1 and 2, the magnetic field generating device further comprises a conductive member connected between the magnetic field control device and the electromagnet assembly 6, a sealing layer is arranged on the outer side of the conductive member, and the conductive member extends from the inside of the heat exchanging space 3 to the outside of the heat exchanging space 3 along the cooling liquid inlet 4 and/or the cooling liquid outlet 5. Further, the sealing layer is not limited to a waterproof coating, a silicone gel, a silicone potting adhesive, and the like. The operation stability of the electromagnet assembly and the conductive piece can be further ensured.
Alternatively, in some embodiments, the conductive member may extend from within the heat exchange space along the coolant inlet to outside the heat exchange space.
Alternatively, in some embodiments, the conductive member may extend from within the heat exchanging space along the coolant outlet to outside the heat exchanging space.
A water-cooled heat shield with an annular magnetic field generating device as shown in fig. 1 and 2, the magnetic field control device being provided with a magnetic field strength detecting unit. The magnetic field intensity detection unit is provided with a plurality of sensors and can detect the magnetic field intensity in the single crystal furnace, the magnetic field intensity is adjusted by utilizing the magnetic field control device so that the magnetic field intensity is used for adjusting the melt movement retarding speed, the rotating speed of the single crystal silicon can be further controlled by adjusting the magnetic field intensity through the magnetic field control device in the single crystal silicon pulling process so as to control the generation quality of the single crystal silicon, optionally, in some embodiments, the surface of the magnetic field intensity detection unit is provided with a sealing layer, and the magnetic field intensity detection unit can be positioned on the upper side close to the inner shell or on the side close to the silicon liquid level in the heat exchange channel.
As shown in fig. 1 and 2, the electromagnet assembly 6 is provided with a plurality of water-cooling heat shields with annular magnetic field generating devices and is distributed along the heat exchange space 3 to form an annular structure. The plurality of electromagnet assemblies are distributed in turn along the circumferential direction of the annular cavity of the heat exchange space, so that the layout flexibility of the electromagnet assemblies can be improved, and magnetic fields generated by the plurality of electromagnet assemblies can be overlapped to retard the thermal convection of fluid from more directions and reduce the impurity content in silicon liquid. Optionally, in some embodiments, a plurality of electromagnet assemblies are connected to a plurality of conductive members, wherein a portion of the conductive members extend from within the heat exchange space along the coolant inlet to outside the heat exchange space, and another portion of the conductive members extend from within the heat exchange space along the coolant outlet to outside the heat exchange space.
A water-cooled heat shield with an annular magnetic field generating device as shown in fig. 1 and 2, the inner housing 1 comprises an inner inclined section 11 and an inner constant section 12, the outer housing 2 comprises a first outer constant section 21, a first outer inclined section 22 and a second outer constant section 23, and the electromagnet assembly 6 is located between the inner constant section 12 and the second outer constant section 23. Optionally, the ring width of the electromagnet assembly 6 is close to the distance between the inner constant section 12 and the second outer constant section 23. The heat exchange space formed between the inner constant section and the second outer constant section is regular in structure, and the electromagnet assembly can be conveniently accommodated.
As shown in fig. 1 and 2, the inner inclined section 11 gradually decreases from top to bottom, and the inner diameter of the bottom end of the inner inclined section 11 is equal to the inner diameter of the inner constant section 12; the first outer inclined section 22 gradually decreases from top to bottom, and the inner diameter of the bottom end of the first outer inclined section 22 is equal to the inner diameter of the second outer constant section 23; the inclination of the inner inclined section 11 is equal to the inclination of the first outer inclined section 22, and the height of the electromagnet assembly 6 is close to the height of the inner constant section 12 and/or the second outer constant section 23. Further, as a preferred embodiment of the utility model, but not limited thereto, the inner inclined section is inclined from top to bottom toward the central axis of the inner shell, the first outer inclined section is inclined from top to bottom toward the central axis of the outer shell, and the inner inclined section and the inner constant section, and the first outer constant section, the first outer inclined section and the second outer constant section are arranged to gradually increase the heat exchange space from top to bottom and then keep constant, so that the heat dissipation of the crystal is enhanced when the monocrystalline silicon rod is pulled, the temperature gradient of the crystal growth front edge is improved, the leveling of the monocrystalline growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of monocrystalline silicon is improved. Alternatively, the height of the inner constant section and the second outer constant section are close, and the magnetic force line range of the electromagnet assembly can better cover the pulling channel close to the silicon solution because the side area of the electromagnet assembly is larger than the bottom area of the electromagnet assembly.
As shown in fig. 1 and 2, a water-cooling heat shield with an annular magnetic field generating device is arranged between the bottom of the inner shell 1 and the bottom of the outer shell 2, a lower flange 8 for sealing the bottom and the bottom of the inner shell and the bottom of the outer shell 2 are arranged, and a cooling gap 9 is formed between the bottom of the electromagnet assembly 6 and the upper side of the lower flange 8. The electromagnet assembly can be connected in the heat exchange space in a welding, clamping and other modes, and particularly, the electromagnet assembly is connected on the outer wall of one side of the inner shell, which is close to the silicon solution. Optionally, form the cooling space between the outer periphery side of electromagnet assembly and the outer invariable section's of second inner wall, the cooling space makes the coolant liquid can cool off electromagnet assembly's outer wall, upside and bottom, avoids the high temperature of silicon solution to lead to electromagnet assembly degaussing or damaging to improve electromagnet assembly's life.
As shown in fig. 1 and 2, the cooling liquid inlet 4 is an elongated pipe with multiple corners, the tail end of the cooling liquid inlet 4 is connected with the heat exchange space 3, the head end of the cooling liquid inlet 4 extends upwards along the axis of the inner shell 1, the cooling liquid outlet 5 is an elongated pipe with multiple corners, the tail end of the cooling liquid outlet 5 is connected with the heat exchange space 3, and the head end of the cooling liquid outlet 5 extends upwards along the axis of the inner shell 1. Further, as a preferred embodiment of the utility model, but not limited thereto, the cooling liquid can be water as a medium, and has the advantages of easy replacement and low cost, water enters the heat exchange space from the tail end of the cooling liquid inlet, water filling the whole heat exchange space can take away the latent heat of crystallization of the silicon crystal rod and flow outwards through the cooling liquid outlet, and the temperature gradient of the crystal growth front is ensured by circulating cooling, thereby being beneficial to leveling the crystal growth interface, further eliminating the crystal distortion phenomenon and improving the quality of the monocrystalline silicon.
As shown in fig. 1 to 2, the embodiment of example 1 is as follows:
the conducting piece extends to the outside of the heat exchange space 3 from the inside of the heat exchange space 3 along the cooling liquid inlet 4, a plurality of electromagnet assemblies 6 are sequentially distributed along the circumferential direction of the annular cavity of the heat exchange space 3, the axial direction of each electromagnet assembly 6 is parallel to the axial direction 7 of the lifting channel, the conducting piece and each electromagnet assembly 6 are both provided with sealing layers, each electromagnet assembly 6 is located between the inner constant section 12 and the second outer constant section 23, the height of each inner constant section 12 and the height of each second outer constant section 23 are close to each other, the height of each electromagnet assembly 6 is close to the height of each second outer constant section 23, the annular width of each electromagnet assembly 6 is close to the distance between each inner constant section 12 and each second outer constant section 23, a cooling gap 8 is formed between the bottom of each electromagnet assembly 6 and the upper side of the lower flange 7, and a cooling gap 8 is formed between the outer circumferential side of each electromagnet assembly 6 and the inner wall of each second outer constant section 23.
The inner inclined section 11 gradually decreases from top to bottom, the inner diameter of the bottom end of the inner inclined section 11 is equal to the inner diameter of the inner constant section 12, the inner diameter of the bottom end of the first outer inclined section 22 is equal to the inner diameter of the second outer constant section 23, and the inclination of the inner inclined section 11 is equal to the inclination of the first outer inclined section 22. The inner inclined section 11 is inclined from top to bottom towards the central axis direction of the inner shell 1, the first outer inclined section 22 is inclined from top to bottom towards the central axis direction of the outer shell 2, and the heat exchange space 3 is kept constant after being gradually increased from top to bottom by arranging the inner inclined section 11, the inner constant section 12, the first outer constant section 21, the first outer inclined section 22 and the second outer constant section 23, so that heat dissipation of crystals is enhanced when a monocrystalline silicon rod is pulled, the temperature gradient of the crystal growth front edge is improved, the leveling of a monocrystalline growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of monocrystalline silicon is improved.
According to the utility model, the magnetic field structure is changed by adding the electromagnet assembly 6, the lorentz force opposite to the movement direction of the melt is generated, the viscosity of the melt is increased, the thermal convection of fluid is blocked, the impurity content in the silicon liquid is reduced, the crystal bar rotates in the production process, the blocking and the rotation speed of the crystal bar are reduced, the electromagnet assembly distributed at the periphery of the lifting channel 7 improves the magnetic field strength, the crystal pulling speed is further accelerated, the crystal pulling time is shortened, the magnetic field control device can be utilized to adjust the lifting speed of the crystal bar according to the field condition, so that a product with better quality is obtained, the annularly arranged electromagnet assembly 6 is positioned at one side close to the lifting channel 7, the magnetic force line range of the circularly arranged electromagnet assembly can cover the lifting channel 7, the lorentz force opposite to the movement direction of the melt is generated by the electromagnet assembly 6 in the rotation upward movement process of the melt, the stirring effect is realized, the impurities which are continuously segregated from the crystal-melt interface are more quickly and evenly distributed by the whole silicon melt, and are not easy to enrich below the crystal-melt interface, and thus the axial and radial uniformity of the distribution of crystal impurities is improved. According to the utility model, the electromagnet assembly 6 is arranged in the heat exchange space 3 without occupying space, and meanwhile, the heat exchange space 3 is circularly cooled by using the cooling liquid, so that the electromagnet assembly 6 is prevented from being demagnetized or damaged due to high temperature of the silicon solution, and the service life of the electromagnet assembly 6 is prolonged.
After the polycrystalline silicon material is heated and melted to form a melt, the melt is conductive, and at the moment, the conductive melt moves in a magnetic field applied by the electromagnet assembly 6, and current microelements in the melt cut magnetic lines of force, so that the magnetic field applied by the electromagnet assembly 6 applies ampere force to the conductive melt, and the direction of the ampere force is opposite to the movement direction of the current microelements, so that the heat convection of fluid can be blocked, the scouring of the fluid to the inner wall of a crucible is reduced, the impurity content in silicon liquid is reduced, and the overall quality balance of crystals is effectively improved.
Water enters the heat exchange space 3 from the tail end of the cooling liquid inlet 4, the water filling the whole heat exchange space 3 can take away the crystallization latent heat of the silicon crystal rod and outwards flows out through the cooling liquid outlet 5, and the temperature gradient of the crystal growth front is guaranteed through circular cooling, so that the leveling of a single crystal growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of single crystal silicon is improved.
The foregoing examples are provided to further illustrate the technical contents of the present utility model for the convenience of the reader, but are not intended to limit the embodiments of the present utility model thereto, and any technical extension or re-creation according to the present utility model is protected by the present utility model. The protection scope of the utility model is subject to the claims.
Claims (10)
1. The utility model provides a water-cooling heat shield with cyclic annular magnetic field generating device, includes magnetic field generating device, is located inner shell (1), shell (2) of silicon liquid level upside, its characterized in that: the inner shell (1) is provided with a lifting channel (7) for a silicon crystal rod to pass through, a heat exchange space (3) is arranged between the inner shell (1) and the outer shell (2), a cooling liquid inlet (4) and a cooling liquid outlet (5) which are respectively communicated with the heat exchange space (3) are arranged on the inner shell (1), the magnetic field generating device comprises an electromagnet assembly (6) which is arranged in the heat exchange space (3) and is in an annular structure, and a magnetic field control device which is arranged outside the heat exchange space (3), the electromagnet assembly (6) is arranged at the lower side of the heat exchange space (3) and is close to one side of the lifting channel (7), the electromagnet assembly (6) is vertically arranged along the extending direction of the lifting channel (7), and a sealing layer is arranged outside the electromagnet assembly (6).
2. A water cooled heat shield with annular magnetic field generator as set forth in claim 1 wherein: the magnetic field generating device further comprises a conductive piece connected between the magnetic field control device and the electromagnet assembly (6), a sealing layer is arranged on the outer side of the conductive piece, and the conductive piece extends from the inside of the heat exchange space (3) to the outside of the heat exchange space (3) along the cooling liquid inlet (4) and/or the cooling liquid outlet (5).
3. A water cooled heat shield with annular magnetic field generator as set forth in claim 1 wherein: the magnetic field control device is provided with a magnetic field intensity detection unit.
4. A water cooled heat shield with annular magnetic field generator as set forth in claim 1 wherein: the electromagnet assemblies (6) are provided with a plurality of annular structures which are distributed along the heat exchange space (3).
5. A water cooled heat shield with annular magnetic field generator as set forth in claim 1 wherein: the inner shell (1) comprises an inner inclined section (11) and an inner constant section (12), the outer shell (2) comprises a first outer constant section (21), a first outer inclined section (22) and a second outer constant section (23), and the electromagnet assembly (6) is located between the inner constant section (12) and the second outer constant section (23).
6. A water cooled heat shield with annular magnetic field generator as set forth in claim 5 wherein: the inner inclined section (11) gradually decreases from top to bottom, and the inner diameter of the bottom end of the inner inclined section (11) is equal to the inner diameter of the inner constant section (12).
7. A water cooled heat shield with annular magnetic field generator as set forth in claim 5 wherein: the first outer inclined section (22) gradually decreases from top to bottom, and the inner diameter of the bottom end of the first outer inclined section (22) is equal to the inner diameter of the second outer constant section (23).
8. A water cooled heat shield with annular magnetic field generator as set forth in claim 5 wherein: the inclination of the inner inclined section (11) is equal to the inclination of the first outer inclined section (22), and the height of the electromagnet assembly (6) is close to the height of the inner constant section (12) and/or the second outer constant section (23).
9. A water cooled heat shield with toroidal magnetic field generating device as claimed in any one of claims 1 to 8, wherein: a lower flange (8) for sealing the bottom of the inner shell (1) and the bottom of the outer shell (2) is arranged between the bottom of the inner shell and the bottom of the outer shell, and a cooling gap (9) is formed between the bottom of the electromagnet assembly (6) and the upper side of the lower flange (8).
10. A water cooled heat shield with toroidal magnetic field generating device as claimed in any one of claims 1 to 8, wherein: the cooling liquid inlet (4) is a multi-corner slender pipeline, the tail end of the cooling liquid inlet (4) is connected with the heat exchange space (3), the head end of the cooling liquid inlet (4) extends upwards along the shaft of the inner shell (1), the cooling liquid outlet (5) is a multi-corner slender pipeline, the tail end of the cooling liquid outlet (5) is connected with the heat exchange space (3), and the head end of the cooling liquid outlet (5) extends upwards along the shaft of the inner shell (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321357079.4U CN219861678U (en) | 2023-05-30 | 2023-05-30 | Water-cooling heat shield with annular magnetic field generating device |
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| CN202321357079.4U CN219861678U (en) | 2023-05-30 | 2023-05-30 | Water-cooling heat shield with annular magnetic field generating device |
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