CN219861677U - Be applied to magnetic ring heat exchanger of single crystal growing furnace - Google Patents
Be applied to magnetic ring heat exchanger of single crystal growing furnace Download PDFInfo
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- CN219861677U CN219861677U CN202321356938.8U CN202321356938U CN219861677U CN 219861677 U CN219861677 U CN 219861677U CN 202321356938 U CN202321356938 U CN 202321356938U CN 219861677 U CN219861677 U CN 219861677U
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- magnetic device
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- heat exchange
- shell
- single crystal
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 138
- 239000013078 crystal Substances 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 239000000110 cooling liquid Substances 0.000 claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 230000005347 demagnetization Effects 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 15
- 239000002826 coolant Substances 0.000 description 9
- 239000000155 melt Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of auxiliary equipment of a single crystal furnace, in particular to a magnetic ring heat exchanger applied to the single crystal furnace, which comprises an inner shell and an outer shell which are respectively positioned on the upper side of a silicon liquid level, wherein a heat exchange space is arranged between the inner shell and the outer shell, a cooling liquid inlet and a cooling liquid outlet which are respectively communicated with the heat exchange space are arranged on the inner shell, a magnetic device with an annular structure is arranged in the heat exchange space, a protruding part extending towards the peripheral side is arranged at the bottom of the outer shell, the magnetic device is positioned at the bottom of the heat exchange space and is close to the silicon liquid level, and the magnetic device is a ferromagnetic piece. According to the utility model, the magnetic device is arranged in the heat exchange space without occupying space, the magnetic device with the annular structure is positioned at the bottom of the heat exchange space and is close to the silicon liquid level, the magnetic force line range of the magnetic device is increased along with the increase of the area of the bottom of the shell, the magnetic force line range of the magnetic device can cover silicon solution in the crucible, the heat exchange space is circularly cooled by using cooling liquid, the demagnetization or damage of the magnetic device caused by the high temperature of the silicon solution is avoided, and the service life of the magnetic device is prolonged.
Description
Technical Field
The utility model relates to the technical field of auxiliary equipment of a single crystal furnace, in particular to a magnetic ring heat exchanger applied to the single crystal furnace.
Background
In recent years, photovoltaic power generation is increasingly being regarded as one of green energy and main energy for sustainable development of human beings, and is being greatly developed by people in various countries around the world. Monocrystalline silicon wafers have a wide market demand as a base material for photovoltaic power generation. The monocrystalline silicon wafer is usually obtained by slicing a monocrystalline silicon rod, and the monocrystalline silicon rod can be formed by growing and drawing silicon liquid.
The Czochralski (Czochralski) process, also known as Czochralski process, is an important process for producing silicon single crystals. In order to increase the crystal growth rate when growing silicon single crystals by the Czochralski method, a single crystal furnace auxiliary device such as a heat exchanger is usually provided in the furnace body to rapidly carry heat released when crystallizing the single crystal silicon rod out of the furnace through the heat exchanger. However, the heat exchanger can also reduce the temperature at the solid-liquid interface while taking away heat, aggravate the temperature difference inside the silicon liquid, because of temperature gradient, gravity, crucible and crystal bar rotation, and the like, there is complicated convection current in the silicon melt in the crucible, the oxygen-containing compound in the silicon liquid is brought to the solid-liquid interface and enters the monocrystalline silicon bar, and the unstable heat convection current can seriously influence the indexes such as the integrity, uniformity, oxygen content and the like of the silicon monocrystal, so that the oxygen content distribution in the monocrystalline silicon bar is uneven and even defects appear, and the product yield is reduced. In the prior art, in order to inhibit solution convection inside the silicon liquid, a magnetic control device is generally introduced into a single crystal silicon rod drawing device.
As disclosed in chinese patent document CN201485534U, a magnetic field device for preparing solar monocrystalline silicon is provided, and the magnetic field generating device is installed outside the furnace body, so that the magnetic field generating device is far away from the silicon solution in the crucible, and meanwhile, the magnetic field generating device has a relatively large structure and needs to occupy a certain volume.
Therefore, there is a need to develop a monocrystalline silicon auxiliary device that does not occupy space and has a magnetic field line range that can cover the silicon solution in the crucible, so as to improve the use experience of the monocrystalline furnace.
Disclosure of Invention
Aiming at the technical problems that the prior monocrystalline silicon auxiliary device occupies space and the magnetic force line range of the device is far away from the silicon solution in the crucible, the technical proposal adopted for solving the technical problems is as follows:
the utility model provides a be applied to magnetic ring heat exchanger of single crystal growing furnace, includes inner shell and the shell that is located the silicon liquid level upside respectively, the inner shell with be equipped with the heat transfer space between the shell, be equipped with on the inner shell respectively with coolant liquid entry and the coolant liquid export of heat transfer space intercommunication, the heat transfer space is equipped with annular structure's magnetic device, the bottom of shell is equipped with the bellying that extends to the week side, magnetic device is located the bottom of heat transfer space and be close to the silicon liquid level, magnetic device is ferromagnetic piece.
According to some embodiments of the utility model, the magnetic device is an integrally formed structure.
According to some embodiments of the utility model, the heat exchanging space is provided with a receiving cavity for receiving the magnetic device, the receiving cavity being located between an inner wall of the boss and an outer wall of the inner shell.
According to some embodiments of the utility model, the inner shell is provided with an inner inclined section and an inner constant section from top to bottom, the outer shell is provided with a first outer constant section, an outer inclined section and a second outer constant section from top to bottom, the protruding portion is located at the lower side of the second outer constant section, the outer diameter of the protruding portion is larger than the outer diameter of the second outer constant section, and the magnetic device is located between the outer wall of the protruding portion and the inner constant section.
According to some embodiments of the utility model, the magnetic device has a loop width greater than a distance between the inner constant section and the second outer constant section.
According to some embodiments of the utility model, the inner sloped section includes a first inner sloped section and a second inner sloped section, the slope of the first inner sloped section being greater than the slope of the second inner sloped section.
According to some embodiments of the utility model, the inner constant section has a vertical distance greater than a vertical distance of the second outer constant section, and the first inner inclined section has an equal slope to the outer inclined section.
According to some embodiments of the utility model, the magnetic device has a loop width that approximates the width of the boss.
According to some embodiments of the utility model, a lower flange for closing the bottom of the inner shell and the bottom of the outer shell is arranged between the bottom of the inner shell and the bottom of the outer shell, and a cooling gap is formed between the bottom of the magnetic device and the upper side of the lower flange.
According to some embodiments of the utility model, the coolant inlet is a multi-cornered elongated duct, the end of the coolant inlet is connected to the heat exchanging space, the head end of the coolant inlet extends axially upward along the inner shell, the coolant outlet is a multi-cornered elongated duct, the end of the coolant outlet is connected to the heat exchanging space, and the head end of the coolant outlet extends axially upward along the inner shell.
The beneficial effects of the utility model are as follows:
according to the utility model, the magnetic device is arranged in the heat exchange space without occupying space, the magnetic device with the annular structure is positioned at the bottom of the heat exchange space and is close to the silicon liquid level, the bottom area of the shell is increased by the bulge part extending towards the periphery, the magnetic force line range of the magnetic device is increased along with the increase of the bottom area of the shell, the magnetic force line range of the magnetic device can cover silicon solution in the crucible, and meanwhile, the heat exchange space is circularly cooled by using cooling liquid, so that the demagnetizing or damage of the magnetic device caused by the high temperature of the silicon solution is avoided, and the service life of the magnetic device is prolonged.
Drawings
Fig. 1 is a schematic diagram of a magnetic ring heat exchanger applied to a single crystal furnace.
Fig. 2 is a schematic diagram of a magnetic field of a magnetic ring heat exchanger applied to a single crystal furnace according to the present utility model.
Detailed Description
Embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.
The magnetic ring heat exchanger for the single crystal furnace comprises an inner shell 1 and an outer shell 2 which are respectively positioned on the upper side of a silicon liquid level, a heat exchange space 3 is arranged between the inner shell 1 and the outer shell 2, a cooling liquid inlet 4 and a cooling liquid outlet 5 which are respectively communicated with the heat exchange space 3 are arranged on the inner shell 1, a magnetic device 6 with an annular structure is arranged in the heat exchange space 3, a protruding part 20 extending towards the peripheral side is arranged at the bottom of the outer shell 2, the magnetic device 6 is positioned at the bottom of the heat exchange space 3 and is close to the silicon liquid level, the magnetic device 6 is a ferromagnetic piece, and the magnetic device 6 is of an integrated structure. Alternatively, the ferromagnetic member may include, but is not limited to, any of samarium cobalt magnets, neodymium iron boron magnets, and ferric oxide magnets. The annular ferromagnetic piece has simple integral structure and low cost, and is suitable for being installed in a heat exchange space. According to the utility model, the magnetic device is arranged in the heat exchange space without occupying space, the magnetic device with the annular structure is positioned at the bottom of the heat exchange space and is close to the silicon liquid level, the bottom area of the shell is increased by the bulge part extending towards the periphery, the magnetic force line range of the magnetic device is increased along with the increase of the bottom area of the shell, the magnetic force line range of the magnetic device can cover silicon solution in the crucible, and meanwhile, the heat exchange space is circularly cooled by using cooling liquid, so that the demagnetizing or damage of the magnetic device caused by the high temperature of the silicon solution is avoided, and the service life of the magnetic device is prolonged.
After the polycrystalline silicon material is heated and melted to form a melt, the melt can conduct electricity, at the moment, the conductive melt moves in a magnetic field applied by a magnetic device, and current microelements in the melt can cut magnetic lines of force, so that the magnetic field applied by the magnetic device applies ampere force to the melt, and the direction of the ampere force is opposite to the moving direction of the current microelements, so that the heat convection of fluid can be retarded, the scouring of the fluid to the inner wall of a crucible is reduced, the impurity content in silicon liquid is reduced, and the overall quality balance of crystals is effectively improved.
Alternatively, in some embodiments, the ferromagnetic piece may include a first magnetic pole and a second magnetic pole, the first magnetic pole and the second magnetic pole being opposite in polarity, the first magnetic pole may be disposed on top of the ferromagnetic piece, the second magnetic pole may be disposed on the bottom of the ferromagnetic piece, or the first magnetic pole may be disposed on the outside of the ferromagnetic piece, the second magnetic pole may be disposed on the inside of the ferromagnetic piece, specifically, the first magnetic pole may be one of the N-pole and the S-pole, and the second magnetic pole may be the other of the N-pole and the S-pole.
Alternatively, the axis of the magnetic device is parallel to the silicon solution level in order that the magnetic field line range of the magnetic device can better cover the silicon solution in the crucible.
As shown in fig. 1 and 2, the magnetic ring heat exchanger applied to the single crystal furnace is characterized in that the heat exchanging space 3 is provided with a containing cavity 31 for containing the magnetic device 6, and the containing cavity 31 is located between the inner wall of the protruding part 20 and the outer wall of the inner shell 1. Optionally, in some embodiments, the protrusion makes the volume of the accommodating cavity between the bottom of the outer shell and the bottom of the inner shell larger, so that the accommodating cavity is close to the silicon liquid level, and the magnetic force line range of the magnetic device can better cover the silicon solution in the crucible.
As shown in fig. 1 and 2, the inner shell 1 is provided with an inner inclined section 11 and an inner constant section 12 from top to bottom, the outer shell 2 is provided with a first outer constant section 21, an outer inclined section 22 and a second outer constant section 23 from top to bottom, the protruding portion 20 is located at the lower side of the second outer constant section 23, the outer diameter of the protruding portion 20 is larger than the outer diameter of the second outer constant section 23, and the magnetic device 6 is located between the outer wall of the protruding portion 20 and the inner constant section 12. Further, as a preferred embodiment of the utility model, but not limited to, the inner inclined section is inclined from top to bottom towards the central axis direction of the inner shell, the outer inclined section is inclined from top to bottom towards the central axis direction of the outer shell, the inner inclined section and the inner constant section, and the first outer constant section, the outer inclined section and the second outer constant section are arranged, so that the heat exchange space is gradually increased from top to bottom, the heat dissipation of crystals is enhanced when the monocrystalline silicon rod is pulled up through the circulating cooling of cooling liquid, the temperature gradient of the crystal growth front edge is improved, the leveling of the crystal growth interface is facilitated, the crystal distortion phenomenon is eliminated, the quality of monocrystalline silicon is improved, and optionally, in some embodiments, the inner wall of the protruding part is of a vertical structure, the section of the accommodating cavity is of a regular rectangular structure, and the magnetic device with a regular shape can be better accommodated.
A magnetic ring heat exchanger applied to a single crystal furnace as shown in fig. 1 and 2, the ring width of the magnetic device 6 is larger than the distance between the inner constant section 12 and the second outer constant section 23, and the ring width of the magnetic device 6 is close to the width of the boss 20. Optionally, the width of the accommodating cavity is larger than the distance between the inner constant section and the second outer constant section, the protruding portion extends outwards, so that the outer diameter of the protruding portion is larger than the distance between the second outer constant section, and when the ring width of the magnetic device is close to the width of the protruding portion, the ring width of the magnetic device is larger than the distance between the inner constant section and the second outer constant section, and the heat exchange space formed between the inner constant section and the second outer constant section limits the movement of the magnetic device, so that the magnetic device can be fixed in the accommodating cavity and cannot move upwards.
A magnetic ring heat exchanger applied to a single crystal furnace as shown in fig. 1 and 2, the inner inclined section 11 includes a first inner inclined section 111 and a second inner inclined section 112, the slope of the first inner inclined section 111 is greater than the slope of the second inner inclined section 112, the vertical distance of the inner constant section 12 is greater than the vertical distance of the second outer constant section 23, and the slopes of the first inner inclined section 111 and the outer inclined section 22 are equal. Optionally, the first interior inclination section from top to bottom inclines towards the central axis direction of the inner shell, and the second interior inclination section from top to bottom inclines towards the central axis direction of the inner shell, and compared with the arrangement that the first interior inclination section is directly connected with the inner constant section, the volume of the heat exchange space can be increased by adding the second interior inclination section, and the temperature gradient is further improved.
As shown in fig. 1 and 2, a magnetic ring heat exchanger applied to a single crystal furnace is provided, a lower flange 7 for sealing the bottom of the inner shell 1 and the bottom of the outer shell 2 is arranged between the bottom of the inner shell and the bottom of the outer shell, and a cooling gap 8 is formed between the bottom of the magnetic device 6 and the upper side of the lower flange 7. The magnetic device can be connected in the heat exchange space in a welding, clamping and other modes, and particularly, the magnetic device is connected on the outer wall of one side of the inner shell, which is close to the silicon solution.
Optionally, form the cooling space between magnetic means's periphery side and the inner wall of bellying, the cooling space makes the coolant liquid can cool off magnetic means's outer wall, upside and bottom, avoids the high temperature of silicon solution to lead to magnetic means degaussing or damaging to improve magnetic means's life.
As shown in fig. 1 and 2, the cooling liquid inlet 4 is a multi-corner elongated pipe, the tail end of the cooling liquid inlet 4 is connected with the heat exchange space 3, the head end of the cooling liquid inlet 4 extends upwards along the axial direction of the inner shell 1, the cooling liquid outlet 5 is a multi-corner elongated pipe, the tail end of the cooling liquid outlet 5 is connected with the heat exchange space 3, and the head end of the cooling liquid outlet 5 extends upwards along the axial direction of the inner shell 1. Specifically, the cooling liquid can be water as a medium, and has the advantages of easy replacement and low cost, water enters the heat exchange space from the tail end of the cooling liquid inlet, the water filling the whole heat exchange space can take away the crystallization latent heat of the silicon crystal rod and outwards flows out through the cooling liquid outlet, the temperature gradient of the crystal growth front edge is ensured through circular cooling, the leveling of the crystal growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of monocrystalline silicon is improved. In order to improve the service life of the magnetic device, a sealing element can be additionally arranged on the surface of the magnetic device, and the sealing element is not limited to waterproof coating, silica gel, organic silicon pouring sealant and the like.
As shown in fig. 1 to 2, the implementation of the present embodiment is as follows:
the magnetic device 6 is a ferromagnetic piece, the magnetic device 6 is in an integrated structure and is located between the inner wall of the protruding portion 20 and the second outer constant section 23, the magnetic device 6 comprises a first magnetic pole and a second magnetic pole, the first magnetic pole is arranged at the top of the magnetic device 6, the second magnetic pole is arranged at the bottom of the magnetic device 6, the polarities of the first magnetic pole and the second magnetic pole are opposite, the annular width of the magnetic device 6 is close to the width of the protruding portion 20, the annular width of the magnetic device 6 is larger than the distance between the inner constant section 12 and the second outer constant section 23, the width of the accommodating cavity 31 is larger than the distance between the inner constant section 12 and the second outer constant section 23, a cooling gap 8 is formed between the bottom of the magnetic device 6 and the upper side of the lower flange 7, and a cooling gap 8 is formed between the outer peripheral side of the magnetic device 6 and the inner wall of the protruding portion 20.
The vertical distance of the inner constant section 12 is greater than that of the second outer constant section 23, the slope of the first inner inclined section 111 is equal to that of the outer inclined section 22, the boss 20 is located at the lower side of the second outer constant section 23, the outer inclined section 22 is inclined from top to bottom towards the central axis direction of the outer shell 2, the first inner inclined section 111 is inclined from top to bottom towards the central axis direction of the inner shell 1, the second inner inclined section 112 is inclined from top to bottom towards the central axis direction of the inner shell 1, and the slope of the first inner inclined section 111 is greater than that of the second inner inclined section 112. By adding the second inner inclined section 112, the volume of the heat exchanging space 3 can be increased, further increasing the longitudinal temperature gradient.
After the polycrystalline silicon material is heated and melted to form a melt, the melt is conductive, and at the moment, the conductive melt moves in a magnetic field applied by the magnetic device 6, and current microelements in the melt cut magnetic lines of force, so that the magnetic field applied by the magnetic device 6 applies ampere force to the polycrystalline silicon material, and the direction of the ampere force is opposite to the movement direction of the current microelements, so that the heat convection of fluid can be blocked, the scouring of the fluid to the inner wall of a crucible is reduced, the impurity content in silicon liquid is reduced, and the overall quality balance of crystals is effectively improved.
Water enters the heat exchange space 3 from the tail end of the cooling liquid inlet 4, the water filling the whole heat exchange space 3 can take away the crystallization latent heat of the silicon crystal rod and outwards flows out through the cooling liquid outlet 5, and the temperature gradient of the crystal growth front is guaranteed through circular cooling, so that the leveling of a single crystal growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of single crystal silicon is improved.
The foregoing examples are provided to further illustrate the technical contents of the present utility model for the convenience of the reader, but are not intended to limit the embodiments of the present utility model thereto, and any technical extension or re-creation according to the present utility model is protected by the present utility model. The protection scope of the utility model is subject to the claims.
Claims (10)
1. Be applied to magnetic ring heat exchanger of single crystal growing furnace, including interior shell (1) and shell (2) that are located silicon liquid level upside respectively, its characterized in that: the heat exchange device comprises an inner shell (1) and an outer shell (2), wherein a heat exchange space (3) is arranged between the inner shell (1), a cooling liquid inlet (4) and a cooling liquid outlet (5) which are respectively communicated with the heat exchange space (3) are arranged on the inner shell (1), a magnetic device (6) with an annular structure is arranged in the heat exchange space (3), a protruding portion (20) extending towards the periphery is arranged at the bottom of the outer shell (2), the magnetic device (6) is located at the bottom of the heat exchange space (3) and is close to the silicon liquid level, and the magnetic device (6) is a ferromagnetic piece.
2. The magnetic ring heat exchanger for a single crystal furnace as claimed in claim 1, wherein: the magnetic device (6) is of an integrated structure.
3. The magnetic ring heat exchanger for a single crystal furnace as claimed in claim 1, wherein: the heat exchange space (3) is provided with a containing cavity (31) for containing the magnetic device (6), and the containing cavity (31) is positioned between the inner wall of the protruding part (20) and the outer wall of the inner shell (1).
4. The magnetic ring heat exchanger for a single crystal furnace as claimed in claim 1, wherein: the inner shell (1) is provided with an inner inclined section (11) and an inner constant section (12) from top to bottom, the outer shell (2) is provided with a first outer constant section (21), an outer inclined section (22) and a second outer constant section (23) from top to bottom, the protruding part (20) is positioned at the lower side of the second outer constant section (23), the outer diameter of the protruding part (20) is larger than the outer diameter of the second outer constant section (23), and the magnetic device (6) is positioned between the outer wall of the protruding part (20) and the inner constant section (12).
5. The magnetic ring heat exchanger for a single crystal furnace according to claim 4, wherein: the annular width of the magnetic means (6) is greater than the distance between the inner constant section (12) and the second outer constant section (23).
6. The magnetic ring heat exchanger for a single crystal furnace according to claim 4, wherein: the inner inclined section (11) comprises a first inner inclined section (111) and a second inner inclined section (112), the slope of the first inner inclined section (111) being greater than the slope of the second inner inclined section (112).
7. The magnetic ring heat exchanger for a single crystal furnace of claim 6, wherein: the vertical distance of the inner constant section (12) is greater than the vertical distance of the second outer constant section (23), and the slopes of the first inner inclined section (111) and the outer inclined section (22) are equal.
8. The magnetic ring heat exchanger for a single crystal furnace as claimed in claim 1, wherein: the ring width of the magnetic device (6) is close to the width of the protruding part (20).
9. A magnetic ring heat exchanger for a single crystal furnace according to any one of claims 1-8, wherein: a lower flange (7) for sealing the bottom of the inner shell (1) and the bottom of the outer shell (2) is arranged between the bottom of the magnetic device (6) and the upper side of the lower flange (7), and a cooling gap (8) is formed between the bottom of the magnetic device and the upper side of the lower flange (7).
10. A magnetic ring heat exchanger for a single crystal furnace according to any one of claims 1-8, wherein: the cooling liquid inlet (4) is a multi-corner slender pipeline, the tail end of the cooling liquid inlet (4) is connected with the heat exchange space (3), the head end of the cooling liquid inlet (4) extends upwards along the axial direction of the inner shell (1), the cooling liquid outlet (5) is a multi-corner slender pipeline, the tail end of the cooling liquid outlet (5) is connected with the heat exchange space (3), and the head end of the cooling liquid outlet (5) extends upwards along the axial direction of the inner shell (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321356938.8U CN219861677U (en) | 2023-05-30 | 2023-05-30 | Be applied to magnetic ring heat exchanger of single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321356938.8U CN219861677U (en) | 2023-05-30 | 2023-05-30 | Be applied to magnetic ring heat exchanger of single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219861677U true CN219861677U (en) | 2023-10-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321356938.8U Active CN219861677U (en) | 2023-05-30 | 2023-05-30 | Be applied to magnetic ring heat exchanger of single crystal growing furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219861677U (en) |
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2023
- 2023-05-30 CN CN202321356938.8U patent/CN219861677U/en active Active
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