CN219861679U - Be applied to magnetic ring water-cooling heat shield of single crystal growing furnace - Google Patents
Be applied to magnetic ring water-cooling heat shield of single crystal growing furnace Download PDFInfo
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- CN219861679U CN219861679U CN202321357209.4U CN202321357209U CN219861679U CN 219861679 U CN219861679 U CN 219861679U CN 202321357209 U CN202321357209 U CN 202321357209U CN 219861679 U CN219861679 U CN 219861679U
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 161
- 239000013078 crystal Substances 0.000 title claims abstract description 71
- 238000001816 cooling Methods 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000000110 cooling liquid Substances 0.000 claims abstract description 25
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000002826 coolant Substances 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 239000000155 melt Substances 0.000 description 23
- 239000012535 impurity Substances 0.000 description 14
- 239000012530 fluid Substances 0.000 description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to the technical field of auxiliary equipment of a single crystal furnace, in particular to a magnetic ring water-cooling heat shield applied to the single crystal furnace, which comprises an inner shell and an outer shell which are positioned on the upper side of a silicon liquid level, wherein the inner shell is provided with a lifting channel for a silicon crystal rod to pass through, a heat exchange space is arranged between the inner shell and the outer shell, a cooling liquid inlet and a cooling liquid outlet which are respectively communicated with the heat exchange space are arranged on the inner shell, the heat exchange space is provided with a magnetic device with an annular structure, the magnetic device is vertically arranged along the extending direction of the lifting channel, the magnetic device is positioned on the lower side of the heat exchange space and is close to one side of the lifting channel, the side area of the magnetic device is larger than the bottom area of the magnetic device, and the magnetic device is a ferromagnetic piece. According to the utility model, the magnetic ring is added to change the magnetic field structure, so that the crystal bar is increased in rotation speed, the crystal pulling time is reduced, the magnetic device is arranged in the heat exchange space without occupying space, the heat exchange space is circularly cooled by using the cooling liquid, and the magnetic device is prevented from being demagnetized or damaged due to the high temperature of the silicon solution, so that the service life of the magnetic device is prolonged.
Description
Technical Field
The utility model relates to the technical field of auxiliary equipment of a single crystal furnace, in particular to a magnetic ring water-cooling heat shield applied to the single crystal furnace.
Background
The Czochralski method is the most widely applied technology for producing monocrystalline silicon at present, a water-cooling heat shield is auxiliary equipment of a monocrystalline furnace for realizing heat transfer between materials between two or more fluids with different temperatures, heat is transferred from a fluid with higher temperature to a fluid with lower temperature, the temperature of the fluid reaches the index specified by a process, when the Czochralski method is used for growing monocrystalline silicon, high-purity solid polycrystalline silicon raw materials are melted in a crucible of the monocrystalline furnace to form melt, a seed crystal is lowered by a seed crystal lifting mechanism to be contacted with the melt in a molten state in a rotary crucible, then the seed crystal is rotationally lifted from a lifting channel of the water-cooling heat shield according to a certain technological method, and the melt is solidified around the seed crystal to form a monocrystalline silicon rod.
When the conventional Czochralski method is used for growing crystals, a heating mode of surrounding the crucible by a heater is adopted, and because of non-uniformity of a temperature field, heat convection of the melt generated by a temperature gradient exists in the melt in the crucible, vortex flow is easy to occur in the melt, the shape of a crystal-melt interface, the uniformity of the temperature gradient and the distribution of impurity concentration are difficult to control, and balance of point defects is difficult to reach.
In order to comprehensively improve the impurity distribution and the material characteristics related to the impurities of the Czochralski single crystal, an external magnetic field is introduced into a melt space during crystal growth, and the conductive melt is blocked by Lorentz force during movement (convection) in the magnetic field, thus the method is a magnetic field Czochralski single crystal technology.
As disclosed in chinese patent document CN113638037a, in the method for preparing single crystal silicon and single crystal furnace, the magnetic field generator is mounted on the periphery of the furnace body, so that the magnetic field generator is far away from the silicon solution and the pulling channel in the crucible, and meanwhile, the magnetic field generator has a relatively large structure and needs to occupy a certain volume.
Therefore, there is a need to develop a monocrystalline silicon auxiliary device that does not occupy space and has a magnetic flux range that can cover the pulling channel and the silicon solution in the crucible, so as to improve the use experience of the monocrystalline furnace.
Disclosure of Invention
Aiming at the technical problems that the prior magnetic field generator is far away from silicon solution and a lifting channel in a crucible, the magnetic field generator has a huge structure and needs to occupy a certain volume, the utility model adopts the technical scheme that:
the utility model provides a be applied to magnetic ring water-cooling heat shield of single crystal growing furnace, includes inner shell and the shell that is located the silicon liquid level upside, the inner shell is equipped with the lift passageway that supplies the silicon crystal bar to pass through, the inner shell with be equipped with the heat transfer space between the shell, be equipped with on the inner shell respectively with coolant liquid entry and the coolant liquid export of heat transfer space intercommunication, the heat transfer space is equipped with annular structure's magnetic device, magnetic device follows lift passageway extending direction is vertical to be set up, magnetic device is located heat transfer space downside and be close to one side of lift passageway, magnetic device's side area is greater than its bottom area, magnetic device is ferromagnetic piece.
According to some embodiments of the utility model, the magnetic device is an integrally formed structure.
According to some embodiments of the utility model, the magnetic device is provided with a plurality of ring-shaped structures distributed along the heat exchanging space.
According to some embodiments of the utility model, the inner housing comprises an inner inclined section and an inner constant section, the outer housing comprises a first outer constant section, a first outer inclined section and a second outer constant section, the magnetic means being located between the inner constant section and the second outer constant section.
According to some embodiments of the utility model, the inner inclined section gradually decreases from top to bottom, and the inner diameter of the bottom end of the inner inclined section is equal to the inner diameter of the inner constant section.
According to some embodiments of the utility model, the first outer inclined section gradually decreases from top to bottom, and an inner diameter of a bottom end of the first outer inclined section is equal to an inner diameter of the second outer constant section.
According to some embodiments of the utility model, the inclination of the inner inclined section is equal to the inclination of the first outer inclined section.
According to some embodiments of the utility model, the height of the magnetic means is close to the height of the inner constant section and/or the second outer constant section.
According to some embodiments of the utility model, a lower flange for closing the bottom of the inner shell and the bottom of the outer shell is arranged between the bottom of the inner shell and the bottom of the outer shell, and a cooling gap is formed between the bottom of the magnetic device and the upper side of the lower flange.
According to some embodiments of the utility model, the coolant inlet is a multi-cornered elongated duct, the end of the coolant inlet is connected to the heat exchanging space, the head end of the coolant inlet extends axially upward along the inner shell, the coolant outlet is a multi-cornered elongated duct, the end of the coolant outlet is connected to the heat exchanging space, and the head end of the coolant outlet extends axially upward along the inner shell.
The beneficial effects of the utility model are as follows:
1. according to the utility model, the magnetic field structure is changed through the magnetic device, lorentz force opposite to the movement direction of the melt is generated, the viscosity of the melt is increased, the thermal convection of fluid is retarded, the impurity content in the silicon liquid is reduced, the crystal bar is rotated in the production process, the magnetic device arranged at the periphery of the pulling channel improves the magnetic field intensity, the rotation speed of the crystal bar is further accelerated, the crystal pulling speed is further accelerated, the crystal pulling time is shortened, the annularly arranged magnetic device is positioned at one side close to the pulling channel, the magnetic force line range of the annularly arranged magnetic device can cover the pulling channel, the magnetic device generates Lorentz force opposite to the movement direction of the melt in the rotating and upward movement process of the melt, the stirring effect is realized, the impurities which are continuously segregated from the crystal-melt interface are more quickly and evenly distributed by all the silicon melt, and are not easy to enrich below the crystal-melt interface, and thus the axial and radial uniformity of the impurity distribution of the grown crystal is improved.
2. According to the utility model, the magnetic device is arranged in the heat exchange space without occupying space, and meanwhile, the cooling liquid is used for circularly cooling the heat exchange space, so that the demagnetizing or damaging of the magnetic device caused by the high temperature of the silicon solution is avoided, and the service life of the magnetic device is prolonged.
Drawings
Fig. 1 is a schematic diagram of a magnetic ring water-cooling heat shield applied to a single crystal furnace.
Fig. 2 is a schematic diagram of a magnetic field of a magnetic ring water-cooling heat shield applied to a single crystal furnace.
Detailed Description
Embodiments of the present utility model will be described in detail below with reference to the accompanying drawings.
The magnetic ring water-cooling heat shield for the single crystal furnace comprises an inner shell 1 and an outer shell 2 which are positioned on the upper side of a silicon liquid level, wherein a lifting channel 7 for a silicon crystal rod to pass through is formed in the inner shell 1, a heat exchange space 3 is formed between the inner shell 1 and the outer shell 2, a cooling liquid inlet 5 and a cooling liquid outlet 4 which are respectively communicated with the heat exchange space 3 are formed in the inner shell 1, a magnetic device 6 with an annular structure is arranged in the heat exchange space 3, the magnetic device 6 is vertically arranged along the extending direction of the lifting channel 7, the magnetic device 6 is positioned at the bottom of the heat exchange space 3 and is close to one side of the lifting channel 7, the side area of the magnetic device 6 is larger than the bottom area of the magnetic device 6, the magnetic device 6 is a ferromagnetic piece, and the magnetic device 6 is of an integrated structure. Alternatively, the ferromagnetic member may include, but is not limited to, any of samarium cobalt magnets, neodymium iron boron magnets, and ferric oxide magnets. The annular ferromagnetic piece has simple integral structure and low cost, and is suitable for being installed in a heat exchange space.
After the polycrystalline silicon material is heated and melted to form a melt, the melt can conduct electricity, at the moment, the conductive melt moves in a magnetic field applied by a magnetic device, and current microelements in the melt can cut magnetic lines of force, so that the magnetic field applied by the magnetic device applies ampere force to the melt, and the direction of the ampere force is opposite to the moving direction of the current microelements, so that the heat convection of fluid can be retarded, the scouring of the fluid to the inner wall of a crucible is reduced, the impurity content in silicon liquid is reduced, and the overall quality balance of crystals is effectively improved.
According to the utility model, the magnetic field structure is changed through the magnetic device, lorentz force opposite to the movement direction of the melt is generated, the viscosity of the melt is increased, the thermal convection of fluid is retarded, the impurity content in the silicon liquid is reduced, the crystal bar is rotated in the production process, the magnetic device arranged at the periphery of the pulling channel improves the magnetic field intensity, the rotation speed of the crystal bar is further accelerated, the crystal pulling speed is further accelerated, the crystal pulling time is shortened, the annularly arranged magnetic device is positioned at one side close to the pulling channel, the magnetic force line range of the annularly arranged magnetic device can cover the pulling channel, the magnetic device generates Lorentz force opposite to the movement direction of the melt in the rotating and upward movement process of the melt, the stirring effect is realized, the impurities which are continuously segregated from the crystal-melt interface are more quickly and evenly distributed by all the silicon melt, and are not easy to enrich below the crystal-melt interface, and thus the axial and radial uniformity of the impurity distribution of the grown crystal is improved.
According to the utility model, the magnetic device is arranged in the heat exchange space without occupying space, and meanwhile, the cooling liquid is used for circularly cooling the heat exchange space, so that the demagnetizing or damaging of the magnetic device caused by the high temperature of the silicon solution is avoided, and the service life of the magnetic device is prolonged.
Alternatively, in some embodiments, the ferromagnetic piece may include a first magnetic pole and a second magnetic pole, the first magnetic pole and the second magnetic pole being opposite in polarity, the first magnetic pole may be disposed on top of the ferromagnetic piece, the second magnetic pole may be disposed on the bottom of the ferromagnetic piece, or the first magnetic pole may be disposed on the outside of the ferromagnetic piece, the second magnetic pole may be disposed on the inside of the ferromagnetic piece, specifically, the first magnetic pole may be one of the N-pole and the S-pole, and the second magnetic pole may be the other of the N-pole and the S-pole.
Optionally, in order to better cover the pull-up channel with the magnetic field line range of the magnetic device, the axial direction of the magnetic device is parallel to the axial direction of the pull-up channel.
The magnetic ring water-cooling heat shield applied to the single crystal furnace is shown in fig. 1 and 2, the magnetic device 6 is a ferromagnetic piece, and the magnetic device 6 is provided with a plurality of magnetic devices and is distributed along the heat exchange space 3 to form an annular structure. Specifically, the ferromagnetic pieces are of a split structure, and the plurality of ferromagnetic pieces are distributed in sequence along the circumferential direction of the annular cavity of the heat exchange space, so that the layout flexibility of the magnetic device can be improved.
A magnetic ring water-cooling heat shield applied to a single crystal furnace as shown in fig. 1 and 2, the inner shell 1 comprises an inner inclined section 11 and an inner constant section 12, the outer shell 2 comprises a first outer constant section 21, a first outer inclined section 22 and a second outer constant section 23, and the magnetic device 6 is positioned between the inner constant section 12 and the second outer constant section 23. Optionally, the loop width of the magnetic means 6 is close to the distance between the inner constant section 12 and the second outer constant section 23. The heat exchange space formed between the inner constant section and the second outer constant section is regular in structure, and the magnetic device can be conveniently accommodated.
As shown in fig. 1 and 2, the inner inclined section 11 gradually decreases from top to bottom, the inner diameter of the bottom end of the inner inclined section 11 is equal to the inner diameter of the inner constant section 12, the first outer inclined section 22 gradually decreases from top to bottom, the inner diameter of the bottom end of the first outer inclined section 22 is equal to the inner diameter of the second outer constant section 23, and the inclination of the inner inclined section 11 is equal to the inclination of the first outer inclined section 22. Further, as a preferred embodiment of the utility model, but not limited thereto, the inner inclined section is inclined from top to bottom toward the central axis of the inner shell, the first outer inclined section is inclined from top to bottom toward the central axis of the outer shell, and the inner inclined section and the inner constant section, and the first outer constant section, the first outer inclined section and the second outer constant section are arranged to gradually increase the heat exchange space from top to bottom and then keep constant, so that the heat dissipation of the crystal is enhanced when the monocrystalline silicon rod is pulled, the temperature gradient of the crystal growth front edge is improved, the leveling of the monocrystalline growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of monocrystalline silicon is improved.
A magnetic ring water-cooling heat shield for a single crystal furnace as shown in fig. 1 and 2, wherein the height of the magnetic device 6 is close to the height of the inner constant section 12 and/or the second outer constant section 23. Alternatively, the heights of the inner constant section and the second outer constant section are close, and the magnetic force line range of the magnetic device can better cover the pulling channel close to the silicon solution because the side area of the magnetic device is larger than the bottom area of the magnetic device.
As shown in fig. 1 and 2, a magnetic ring water-cooling heat shield applied to a single crystal furnace is arranged between the bottom of the inner shell 1 and the bottom of the outer shell 2, a lower flange 8 for sealing the bottom and the bottom of the inner shell and the bottom of the outer shell 2 are arranged, and a cooling gap 9 is formed between the bottom of the magnetic device 6 and the upper side of the lower flange 8. The magnetic device can be connected in the heat exchange space in a welding, clamping and other modes, and particularly, the magnetic device is connected on the outer wall of one side of the inner shell, which is close to the silicon solution. Optionally, form the cooling space between the outer periphery side of magnetic means and the outer invariable section's of second inner wall, the cooling space makes the coolant liquid can cool off magnetic means's outer wall, upside and bottom, avoids the high temperature of silicon solution to lead to magnetic means degaussing or damaging to improve magnetic means's life.
The magnetic ring water-cooling heat shield for the single crystal furnace is shown in fig. 1 and 2, the cooling liquid inlet 5 is a multi-corner slender pipeline, the tail end of the cooling liquid inlet 5 is connected with the heat exchange space 3, the head end of the cooling liquid inlet 5 extends upwards along the axial direction of the inner shell 1, the cooling liquid outlet 4 is a multi-corner slender pipeline, the tail end of the cooling liquid outlet 4 is connected with the heat exchange space 3, and the head end of the cooling liquid outlet 4 extends upwards along the axial direction of the inner shell 1. Further, as a preferred embodiment of the utility model, but not limited thereto, the cooling liquid can be water as a medium, and has the advantages of easy replacement and low cost, water enters the heat exchange space from the tail end of the cooling liquid inlet, water filling the whole heat exchange space can take away the latent heat of crystallization of the silicon crystal rod and flow outwards through the cooling liquid outlet, and the temperature gradient of the crystal growth front is ensured by circulating cooling, thereby being beneficial to leveling the crystal growth interface, further eliminating the crystal distortion phenomenon and improving the quality of the monocrystalline silicon. In order to improve the service life of the magnetic device, a sealing element can be additionally arranged on the surface of the magnetic device, and the sealing element is not limited to waterproof coating, silica gel, organic silicon pouring sealant and the like.
As shown in fig. 1 to 2, the implementation of the present embodiment is as follows:
the magnetic device 6 is a ferromagnetic piece, the magnetic device 6 is in an integral structure and is positioned between the inner constant section 12 and the second outer constant section 23, the heights of the inner constant section 12 and the second outer constant section 23 are close to each other, the height of the magnetic device 6 is close to the height of the second outer constant section 23, the magnetic device 6 comprises a first magnetic pole and a second magnetic pole, the first magnetic pole is arranged at the top of the magnetic device 6, the second magnetic pole is arranged at the bottom of the magnetic device 6, the polarities of the first magnetic pole and the second magnetic pole are opposite, the annular width of the magnetic device 6 is close to the distance between the inner constant section 12 and the second outer constant section 23, a cooling gap 8 is formed between the bottom of the magnetic device 6 and the upper side of the lower flange 7, and a cooling gap 8 is formed between the outer peripheral side of the magnetic device 6 and the inner wall of the second outer constant section 23.
The inner inclined section 11 gradually decreases from top to bottom, the inner diameter of the bottom end of the inner inclined section 11 is equal to the inner diameter of the inner constant section 12, the inner diameter of the bottom end of the first outer inclined section 22 is equal to the inner diameter of the second outer constant section 23, and the inclination of the inner inclined section 11 is equal to the inclination of the first outer inclined section 22. The inner inclined section 11 is inclined from top to bottom towards the central axis direction of the inner shell 1, the first outer inclined section 22 is inclined from top to bottom towards the central axis direction of the outer shell 2, and the heat exchange space 3 is kept constant after being gradually increased from top to bottom by arranging the inner inclined section 11, the inner constant section 12, the first outer constant section 21, the first outer inclined section 22 and the second outer constant section 23, so that heat dissipation of crystals is enhanced when a monocrystalline silicon rod is pulled, the temperature gradient of the crystal growth front edge is improved, the leveling of a monocrystalline growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of monocrystalline silicon is improved.
According to the utility model, the magnetic field structure is changed by adding the magnetic device 6, lorentz force opposite to the movement direction of the melt is generated, the viscosity of the molten silicon is increased, the thermal convection of fluid is retarded, the impurity content in the silicon liquid is reduced, the crystal rod rotates in the production process, the obstruction is reduced, the rotation speed of the crystal rod is increased, the crystal pulling speed is further increased, the crystal pulling time is shortened, the annularly arranged magnetic device 6 is positioned at one side close to the pulling channel 7, the magnetic line range can cover the pulling channel 7, the magnetic device 6 generates Lorentz force opposite to the movement direction of the melt in the rotation and upward movement process, the stirring effect is realized, the impurities continuously segregated from the crystal-melt interface are more quickly and evenly distributed by all silicon melt, and are not easy to enrich below the crystal-melt interface, so that the axial and radial uniformity of the impurity distribution of the grown crystal is improved. According to the utility model, the magnetic device 6 is arranged in the heat exchange space without occupying space, and meanwhile, the cooling liquid is used for circularly cooling the heat exchange space 3, so that the magnetic device 6 is prevented from being demagnetized or damaged due to high temperature of the silicon solution, and the service life of the magnetic device 6 is prolonged.
After the polycrystalline silicon material is heated and melted to form a melt, the melt is conductive, and at the moment, the conductive melt moves in a magnetic field applied by the magnetic device 6, and current microelements in the melt cut magnetic lines of force, so that the magnetic field applied by the magnetic device 6 applies ampere force to the polycrystalline silicon material, and the direction of the ampere force is opposite to the movement direction of the current microelements, so that the heat convection of fluid can be blocked, the scouring of the fluid to the inner wall of a crucible is reduced, the impurity content in silicon liquid is reduced, and the overall quality balance of crystals is effectively improved.
Water enters the heat exchange space 3 from the tail end of the cooling liquid inlet 5, the water filling the whole heat exchange space 3 can take away the crystallization latent heat of the silicon crystal rod and outwards flows out through the cooling liquid outlet 4, and the temperature gradient of the crystal growth front is guaranteed through circular cooling, so that the leveling of a single crystal growth interface is facilitated, the crystal distortion phenomenon is eliminated, and the quality of single crystal silicon is improved.
The foregoing examples are provided to further illustrate the technical contents of the present utility model for the convenience of the reader, but are not intended to limit the embodiments of the present utility model thereto, and any technical extension or re-creation according to the present utility model is protected by the present utility model. The protection scope of the utility model is subject to the claims.
Claims (10)
1. Be applied to magnetic ring water-cooling heat shield of single crystal growing furnace, including inner shell (1) and shell (2) that are located silicon liquid level upside, its characterized in that: the utility model discloses a silicon crystal rod, including inner shell (1), heat transfer space (3) are equipped with between inner shell (1) and shell (2), be equipped with on inner shell (1) respectively with coolant liquid entry (5) and coolant liquid export (4) of heat transfer space (3) intercommunication, heat transfer space (3) are equipped with annular structure's magnetic means (6), magnetic means (6) are followed carry and draw vertical setting of passageway (7) extending direction, magnetic means (6) are located heat transfer space (3) downside just is close to carry one side of drawing passageway (7), the lateral surface of magnetic means (6) is greater than its bottom surface, magnetic means (6) are ferromagnetic piece.
2. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in claim 1, wherein: the magnetic device (6) is of an integrated structure.
3. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in claim 1, wherein: the magnetic device (6) is provided with a plurality of annular structures which are distributed along the heat exchange space (3).
4. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in claim 1, wherein: the inner shell (1) comprises an inner inclined section (11) and an inner constant section (12), the outer shell (2) comprises a first outer constant section (21), a first outer inclined section (22) and a second outer constant section (23), and the magnetic device (6) is located between the inner constant section (12) and the second outer constant section (23).
5. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in claim 4, wherein: the inner inclined section (11) gradually decreases from top to bottom, and the inner diameter of the bottom end of the inner inclined section (11) is equal to the inner diameter of the inner constant section (12).
6. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in claim 4, wherein: the first outer inclined section (22) gradually decreases from top to bottom, and the inner diameter of the bottom end of the first outer inclined section (22) is equal to the inner diameter of the second outer constant section (23).
7. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in claim 4, wherein: the inclination of the inner inclined section (11) is equal to the inclination of the first outer inclined section (22).
8. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in claim 4, wherein: the height of the magnetic means (6) is close to the height of the inner constant section (12) and/or the second outer constant section (23).
9. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in any one of claims 1 to 8, wherein: a lower flange (8) for sealing the bottom of the inner shell (1) and the bottom of the outer shell (2) is arranged between the bottom of the magnetic device (6) and the upper side of the lower flange (8), and a cooling gap (9) is formed between the bottom of the magnetic device and the upper side of the lower flange (8).
10. The magnetic ring water-cooling heat shield applied to a single crystal furnace as claimed in any one of claims 1 to 8, wherein: the cooling liquid inlet (5) is a multi-corner slender pipeline, the tail end of the cooling liquid inlet (5) is connected with the heat exchange space (3), the head end of the cooling liquid inlet (5) extends upwards along the axial direction of the inner shell (1), the cooling liquid outlet (4) is a multi-corner slender pipeline, the tail end of the cooling liquid outlet (4) is connected with the heat exchange space (3), and the head end of the cooling liquid outlet (4) extends upwards along the axial direction of the inner shell (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321357209.4U CN219861679U (en) | 2023-05-30 | 2023-05-30 | Be applied to magnetic ring water-cooling heat shield of single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321357209.4U CN219861679U (en) | 2023-05-30 | 2023-05-30 | Be applied to magnetic ring water-cooling heat shield of single crystal growing furnace |
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| Publication Number | Publication Date |
|---|---|
| CN219861679U true CN219861679U (en) | 2023-10-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202321357209.4U Active CN219861679U (en) | 2023-05-30 | 2023-05-30 | Be applied to magnetic ring water-cooling heat shield of single crystal growing furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN219861679U (en) |
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2023
- 2023-05-30 CN CN202321357209.4U patent/CN219861679U/en active Active
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Effective date of registration: 20240528 Address after: 710100 No. 388, middle route, Xi'an, Shaanxi, Changan District Patentee after: LONGI GREEN ENERGY TECHNOLOGY Co.,Ltd. Country or region after: China Address before: 528400 second floor, building B, No. 30, Yanjiang East Fifth Road, Torch Development Zone, Zhongshan City, Guangdong Province (residence declaration) Patentee before: Zhongshan Huichuang Precision Technology Co.,Ltd. Country or region before: China |