CN102011175A - Flow guide cylinder used for czochralski silicon single crystal growth finance - Google Patents
Flow guide cylinder used for czochralski silicon single crystal growth finance Download PDFInfo
- Publication number
- CN102011175A CN102011175A CN 201010565419 CN201010565419A CN102011175A CN 102011175 A CN102011175 A CN 102011175A CN 201010565419 CN201010565419 CN 201010565419 CN 201010565419 A CN201010565419 A CN 201010565419A CN 102011175 A CN102011175 A CN 102011175A
- Authority
- CN
- China
- Prior art keywords
- silicon single
- single crystal
- guide shell
- flow guide
- guide cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a flow guide cylinder used for a czochralski silicon single crystal growth finance. The flow guide cylinder comprises a flow guide cylinder body, wherein the flow guide cylinder body has a conical cylindrical structure which has a large upper part and a small lower part; and a plurality of shunt grooves are uniformly reserved on the lower end part of the flow guide cylinder body annularly. The flow guide cylinder used for the czochralski silicon single crystal growth finance has a simple structure and a reasonable design, is safe to use, can effectively improve the growth efficiency of silicon single crystals, and can be widely used in czochralski silicon single crystal growth equipment.
Description
Technical field
The invention belongs to silicon single-crystal and prepare equipment technical field, be specifically related to a kind of vertical pulling silicon single crystal growing furnace guide shell.
Background technology
Silicon single-crystal is a main raw material of making unicircuit and solar cell, the growth of silicon single-crystal mainly utilizes vertical pulling silicon single crystal growing furnace, the policrystalline silicon starting material are put into crucible, by well heater the policrystalline silicon starting material are melted, then, the method that guides, upwards lifts by seed crystal grows the ideal silicon single-crystal.In the silicon single-crystal growth process process that upwards lifts continuously, process gas (high-purity argon gas) charges into from the silicon single crystal growing furnace top, in order to guarantee the timely eliminating of stablizing growth fast and volatile matter of silicon single-crystal, guide shell is installed on crucible, argon gas is discharged from silicon single crystal growing furnace bottom bleeding point by vacuum pump through the inwall of guide shell and stay-warm case again.But, in the silicon monocrystal growth process, form the annular slit between silicon single crystal bar and the guide shell lower end, when argon gas stream during through the guide shell lower end, according to fluid mechanics principle, in case silicon single crystal bar and guide shell lower end decentraction will produce the uneven slit of width between silicon single crystal bar and the guide shell lower end, uneven argon gas flows will cause that silicon single crystal bar rocks, thereby influences the normal growth of silicon single-crystal.
Summary of the invention
The purpose of this invention is to provide a kind of vertical pulling silicon single crystal growing furnace guide shell simple in structure, easy to use, can effectively change the gas flow model between silicon single crystal bar and the guide shell lower end, avoiding rocking of silicon single crystal bar, and then improved production efficiency.
The technical solution adopted in the present invention is, a kind of vertical pulling silicon single crystal growing furnace guide shell comprises the guide shell body, and the guide shell body is up big and down small taper tubular structure, and the bottom of guide shell body is evenly distributed in the form of a ring and has a plurality of splitter boxs.
The longitudinal cross-section of splitter box is arch, rectangle, trapezoidal, circular arc or trilateral.
Vertical pulling silicon single crystal growing furnace of the present invention is installed uses the vertical pulling silicon single crystal growing furnace of guide shell when work, after argon gas enters from the top of vertical pulling silicon single crystal growing furnace, conflux by the guide shell body, pass through the shunting of splitter box again, just changed the argon gas stream movable model between silicon single crystal bar and the guide shell bottom, improved the argon gas flow-pattern, stablized flowing of argon gas, thereby avoid producing the silicon single crystal bar shaking phenomenon, promoted the stability of silicon monocrystal growth, improved production efficiency.
Description of drawings
Fig. 1 is the structural representation of vertical pulling silicon single crystal growing furnace of the present invention with guide shell;
Fig. 2 is that the K of Fig. 1 is to view;
Fig. 3 is the structural representation that is equipped with on the vertical pulling silicon single crystal growing furnace usefulness vertical pulling silicon single crystal growing furnace of guide shell of the present invention;
Wherein, 1. guide shell body, 2. splitter box, 3. drop-bottom, 4. venting port, 5. stove tube, 6. crucible shaft, 7. stay-warm case, 8. well heater, 9. crucible, 10. polysilicon solution, 11. silicon single crystal bars, 12. bells, 13. steel-wire flexible-shafts.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
As depicted in figs. 1 and 2, vertical pulling silicon single crystal growing furnace of the present invention comprises guide shell body 1 with guide shell, and guide shell body 1 is up big and down small taper tubular structure, and the bottom of guide shell body 1 has a plurality of splitter boxs 2, and splitter box 2 in the form of a ring and uniform distribution.Wherein, according to the size of guide shell body 1 and the concrete processing requirement of silicon monocrystal growth, select the quantity of splitter box 2, and the longitudinal cross-section shape of selecting splitter box 2, its longitudinal cross-section shape can be arch, rectangle, trapezoidal, circular arc, trilateral or other shapes.In the present embodiment, the quantity of splitter box 2 is 12, and its longitudinal cross-section is an arch.
As shown in Figure 3, for the structural representation of vertical pulling silicon single crystal growing furnace of the present invention with the vertical pulling silicon single crystal growing furnace of guide shell is installed.This vertical pulling silicon single crystal growing furnace comprises vacuum workshop and crystal growing chamber, the growth of silicon single-crystal is the policrystalline silicon starting material to be put into crucible 9 in that vacuum work is indoor, by well heater 8 the policrystalline silicon starting material are melted, then, the method growing silicon single crystal rod 11 that guides, upwards lifts by seed crystal.Wherein, vacuum workshop is made up of drop-bottom 3, stove tube 5 and bell 12, and the bottom of stove tube 5 is symmetrically arranged with two venting ports 4, and these two venting ports all are connected with vacuum pump.Be positioned at the central position of vacuum workshop, be provided with crucible 9 by the vertical crucible shaft 6 that is arranged on the drop-bottom 3 of interting, well heater 8 and stay-warm case 7 are installed around the crucible 9, crucible 9 inside fill the polysilicon solution 10 that the fusing of policrystalline silicon raw material forms.The top of crucible 9 is equipped with vertical pulling silicon single crystal growing furnace guide shell of the present invention.The indoor steel-wire flexible-shaft 13 that guides silicon single crystal bar 11 to do the rotary pulling growth movement that vertically is provided with of this crystal growth.
Silicon single crystal bar 11 is when growth, and crucible 9 is driven by crucible shaft 6 and rotates, while silicon single crystal bar 11 rotates the pulling growth that makes progress by steel-wire flexible-shaft 13.Simultaneously, argon gas charges into from the top of silicon single crystal growing furnace, through the conflux of guide shell body 1, passes through the shunting of a plurality of splitter boxs 2 again, and discharge from bleeding point 4 stay-warm case 7 backs of flowing through at last.Wherein, argon gas is when the annulus of flowing through between guide shell body 1 and the silicon single crystal bar 11, because the shunting of splitter box 2, can change the argon gas stream movable model between silicon single crystal bar 11 and the guide shell bottom, improved the argon gas flow-pattern, stablized flowing of argon gas, thereby avoided silicon single crystal bar 11 to rock, promote the stability of silicon monocrystal growth, improved production efficiency.
Vertical pulling silicon single crystal growing furnace of the present invention is simple in structure, reasonable in design, safe in utilization with guide shell, can effectively improve the growth efficiency of silicon single-crystal, can be widely used in the vertical pulling silicon single crystal growing equipment.
Claims (2)
1. vertical pulling silicon single crystal growing furnace guide shell, it is characterized in that, comprise guide shell body (1), described guide shell body (1) is up big and down small taper tubular structure, and the bottom of described guide shell body (1) is evenly distributed in the form of a ring and has a plurality of splitter boxs (2).
2. according to vertical pulling silicon single crystal growing furnace guide shell according to claim 1, it is characterized in that the longitudinal cross-section of described splitter box (2) is arch, rectangle, trapezoidal, circular arc or trilateral.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010565419 CN102011175A (en) | 2010-11-30 | 2010-11-30 | Flow guide cylinder used for czochralski silicon single crystal growth finance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010565419 CN102011175A (en) | 2010-11-30 | 2010-11-30 | Flow guide cylinder used for czochralski silicon single crystal growth finance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102011175A true CN102011175A (en) | 2011-04-13 |
Family
ID=43841496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010565419 Pending CN102011175A (en) | 2010-11-30 | 2010-11-30 | Flow guide cylinder used for czochralski silicon single crystal growth finance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102011175A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106929910A (en) * | 2015-12-30 | 2017-07-07 | 西安隆基硅材料股份有限公司 | Guide shell and the single crystal growing furnace thermal field with the guide shell |
| CN107130295A (en) * | 2017-04-17 | 2017-09-05 | 宜昌南玻硅材料有限公司 | A kind of elimination hidden device and method split of silicon plug |
| CN109468681A (en) * | 2018-11-30 | 2019-03-15 | 邢台晶龙新能源有限责任公司 | A kind of single crystal growing furnace argon gas energy conservation Supply Method |
| CN111321457A (en) * | 2018-12-13 | 2020-06-23 | 上海新昇半导体科技有限公司 | Split type draft tube |
| WO2023185536A1 (en) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | Draft tube for pulling of single crystals and single crystal furnace provided with same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0733587A (en) * | 1993-07-20 | 1995-02-03 | Toshiba Corp | Production of single crystal and apparatus for pulling up single crystal |
| JPH0891980A (en) * | 1994-09-20 | 1996-04-09 | Mitsubishi Materials Corp | Apparatus for growing single crystal |
| CN1272146A (en) * | 1997-09-30 | 2000-11-01 | Memc电子材料有限公司 | Heat shield for crystal puller |
| JP2001002492A (en) * | 1999-06-17 | 2001-01-09 | Komatsu Electronic Metals Co Ltd | Method and device for producing single crystal |
| CN201890951U (en) * | 2010-11-30 | 2011-07-06 | 江苏华盛天龙光电设备股份有限公司 | Guide cylinder for straight pull silicon single crystal growing furnace |
-
2010
- 2010-11-30 CN CN 201010565419 patent/CN102011175A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0733587A (en) * | 1993-07-20 | 1995-02-03 | Toshiba Corp | Production of single crystal and apparatus for pulling up single crystal |
| JPH0891980A (en) * | 1994-09-20 | 1996-04-09 | Mitsubishi Materials Corp | Apparatus for growing single crystal |
| CN1272146A (en) * | 1997-09-30 | 2000-11-01 | Memc电子材料有限公司 | Heat shield for crystal puller |
| JP2001002492A (en) * | 1999-06-17 | 2001-01-09 | Komatsu Electronic Metals Co Ltd | Method and device for producing single crystal |
| CN201890951U (en) * | 2010-11-30 | 2011-07-06 | 江苏华盛天龙光电设备股份有限公司 | Guide cylinder for straight pull silicon single crystal growing furnace |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106929910A (en) * | 2015-12-30 | 2017-07-07 | 西安隆基硅材料股份有限公司 | Guide shell and the single crystal growing furnace thermal field with the guide shell |
| CN106929910B (en) * | 2015-12-30 | 2018-10-16 | 隆基绿能科技股份有限公司 | Guide shell and single crystal growing furnace thermal field with the guide shell |
| CN107130295A (en) * | 2017-04-17 | 2017-09-05 | 宜昌南玻硅材料有限公司 | A kind of elimination hidden device and method split of silicon plug |
| CN109468681A (en) * | 2018-11-30 | 2019-03-15 | 邢台晶龙新能源有限责任公司 | A kind of single crystal growing furnace argon gas energy conservation Supply Method |
| CN111321457A (en) * | 2018-12-13 | 2020-06-23 | 上海新昇半导体科技有限公司 | Split type draft tube |
| WO2023185536A1 (en) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | Draft tube for pulling of single crystals and single crystal furnace provided with same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102011175A (en) | Flow guide cylinder used for czochralski silicon single crystal growth finance | |
| CN103014852B (en) | A kind of method for casting efficient polycrystalline silicon ingot | |
| CN102345157A (en) | Continuous re-feeding production method of solar-grade Czochralski silicon | |
| CN103011567A (en) | Preparation method of quartz ceramic crucible | |
| CN102220632A (en) | Technical method of N-type Czochralski silicon monocrystal | |
| CN101545134B (en) | Method and device for preparing high-purity single crystal silicon bar by utilizing silicon material containing impurities | |
| CN107709634A (en) | The manufacture method of monocrystalline silicon | |
| CN201890951U (en) | Guide cylinder for straight pull silicon single crystal growing furnace | |
| CN201292418Y (en) | Monocrystalline silicon growth furnace | |
| CN201626998U (en) | Thermal field of czochralski silicon monocrystal | |
| CN104894644B (en) | Nitride crystal growing device and method | |
| CN202658261U (en) | Novel single crystal bar clamping mechanism for zone melting furnace | |
| CN203159740U (en) | Growth device for growing multiple crystals by adopting guided mode method | |
| CN201634795U (en) | Czochralski crystal furnace graphite crucible | |
| CN102011176A (en) | Silicon single crystal growth furnace with gas cold traps | |
| CN201924100U (en) | Silicon single crystal growth furnace with gas cold trap | |
| CN103160917A (en) | Drawing die plate for hollow silicon core | |
| CN202808987U (en) | Large-sized single crystal seed | |
| CN202530199U (en) | Assembly type high-temperature resistant crucible | |
| CN202297852U (en) | Secondary feeding device for czochralski single crystal furnace | |
| CN201276607Y (en) | Feeder for monocrystal silicon | |
| CN103436954A (en) | Seed crystal for seeding during manufacturing of silicon single crystal rod and manufacturing method of silicon single crystal rod | |
| CN203653760U (en) | Die for growing large-diameter tubular sapphire by using edge-defined film-fed growth method | |
| CN209276672U (en) | A kind of vertical pulling heavy Sb-admixed silicon monocrystal antimony source purifying plant | |
| CN200992592Y (en) | Crystal growing system by multi-crucible falling method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110413 |