TW202020212A - Gas-mixing structure and reaction device - Google Patents

Abstract

The invention discloses a gas-mixing structure. The gas-mixing structure is used for mixing gas. The gas-mixing structure is internally provided with a gas-mixing chamber and a plurality of gas channels, wherein the gas-mixing chamber is provided with a top end and an opening end, the top end is in a dome shape, the gas channels communicate with the top end so as to communicate with the gas-mixingchamber, and the opening end is used for outflow of mixed gas. Through the gas-mixing structure, the gas can be uniformly mixed inside the gas-mixing chamber, through the design of the dome-shaped top end, gas can uniformly flow inside the gas-mixing chamber and can not accumulate in the corners, and furthermore, the gas-mixing chamber is easy to clean.

Description

Gas mixing structure and reaction equipment

The invention relates to a gas-mixing structure, in particular to a gas-mixing structure applied to a reaction device.

In the semiconductor coating process, the general principle is to allow one or more gases to enter the vacuum reaction chamber, and under a specific temperature, electric field, pressure and other conditions, a chemical reaction occurs on the substrate surface to produce a coating.

With the advancement of technology, the requirements for the uniformity of the quality of the coating are also increasing, and there are corresponding requirements for the uniform mixing of the various gases participating in the chemical reaction. However, the gas of different functions should be sprayed uniformly and symmetrically on the surface of the substrate, which is still a big challenge for the design of the mixed structure of the reaction gas.

In view of this, the object of the present invention is to provide a gas-mixing structure that can effectively mix gases.

The present invention provides a gas-mixing structure for mixing gases. The gas-mixing structure includes: a gas-mixing chamber; a plurality of gas channels; and wherein the gas-mixing chamber has a top end and an open end. The top end has a dome shape, the plurality of gas channels communicate with the top end and communicate with the gas mixing chamber, and the open end is used for the mixed gas to flow out.

Preferably, the plurality of gas channels are arranged symmetrically with respect to the central axis of the gas mixing chamber. Preferably, the aforementioned symmetrical configuration is a rotationally symmetrical configuration.

Preferably, the axes of the plurality of gas channels are radially spaced from the central axis of the gas mixing chamber. Preferably, the spacing distances between the axes of the plurality of gas inlet channels and the central axis of the mixing chamber in the radial direction are all equal. Preferably, the plurality of gas channels are located at the same height relative to the opening. Preferably, the diameter of the gas mixing chamber is greater than twice the diameter of the plurality of gas channels.

The present invention also provides a reaction device, comprising: the gas mixing structure as described above; and a reaction chamber, wherein the gas mixing structure is located above the reaction chamber, and the opening is in communication with the reaction chamber.

Preferably, at least one of the plurality of gas channels is located above the reaction chamber more than the opening.

By the invention of the present invention as described above, the gas can be uniformly mixed in the gas mixing chamber. In addition, by the design of the dome-shaped top, the gas can flow uniformly in the gas mixing chamber without accumulating in the corners. Easy to clean the air mixing room.

In order to facilitate the technical features, content and advantages of the present invention and the achievable effects, the present invention is described in detail in conjunction with the drawings and in the form of expressions of the embodiments, and the figures used therein are only for the purpose of The use of illustrations and auxiliary instructions is not limited to the drawings and styles, and may not be the true scale and precise configuration after the implementation of the present invention, so it should not be interpreted and limited to the actual relationship between the scale and configuration of the attached drawings. The scope of rights in implementation shall be stated first.

The "dome shape" in the present invention refers to a shape in which the cross-sectional area gradually increases from the sealed end of the cavity toward the open end thereof. The aforementioned "cross-section" refers to a cross-section perpendicular to the central axis of the cavity. The cross-section may have any shape, preferably a circle, an ellipse, or an equilateral polygon. When the cross-section is circular or elliptical, the "dome-shaped" sealing end system may assume a spherical dome shape with a specific radius of curvature. When the cross-section is an equilateral polygon, the "dome-shaped" sealing end system may present a dome-shaped or pyramid-shaped seal radius of a specific curvature, but not limited to this.

The "vortex" in the present invention refers to the fluid flowing in the cavity rotating around a specific central axis. Specifically, the "specific central axis" may be the central axis of the cavity, or an axis parallel to the central axis of the cavity.

The "symmetrical configuration" in the present invention refers to a configuration relationship, which exhibits various forms of symmetry with respect to the central axis of the cavity, which may be point symmetry, line symmetry, rotational symmetry, or plane symmetry. The "rotationally symmetrical configuration" in the present invention refers to a configuration relationship, which can still exhibit the same configuration configuration relationship after a specific angle around the central axis. Specifically, the specific angle can be 360/n, where n is natural Number of angles.

[First Embodiment]

Please refer to the first picture. The first figure shows a schematic structural diagram of the reaction device 10 according to the first embodiment of the present invention. As shown in the figure, the reaction device 10 includes a reaction portion 11; an etching gas generating portion 12; a gas box 13; and a gas mixing structure 14. In the first embodiment, an etching gas line 15 is provided between the reaction portion 11 and the etching gas generation chamber 14. A gas pipeline 16a and a gas pipeline 16b are provided between the gas box 13 and the gas mixing structure 14 for transmitting gas A and gas B into the gas mixing structure 14, respectively.

See the second picture. The second figure shows a partially enlarged cross-sectional view of the reaction apparatus 10 of the first embodiment of the present invention. As shown in the figure, an upper cover 112 for sealing the reaction chamber 111 is provided above the reaction portion 11. The gas mixing block 17 is disposed between the etching gas pipeline 15 and the reaction portion 11, and an etching gas channel 171 and a mixed gas channel 172 are formed inside. The etching gas channel 171 communicates with the openings of the etching gas pipeline 15 and the upper cover 112 so that the etching gas can be sent to the reaction chamber 111. The reaction chamber 111 is provided with a shower plate 113, so that the reaction gas sent into the reaction chamber 111 can be evenly sprayed onto the carrier tray 114 located below the shower plate 113. The mixed gas channel 172 of the gas mixing block 17 communicates with the etching gas channel 171 at one end and the open end 1412 of the gas mixing chamber 141 at the other end, so that the mixed gas A and gas B can pass through the mixed gas channel 172 and the etching gas channel 171 is sent to the reaction chamber 111.

Please continue to refer to the second figure. The gas mixing structure 14 is formed inside: a gas mixing chamber 141; a gas channel 142a; and a gas channel 142b. The inner diameter of the gas mixing chamber 141 is more than twice that of the gas channels 142a and 142b. The air mixing chamber 141 has a top end 1411 and an open end 1412. The top end 1411 of the gas mixing chamber 141 is domed, and the gas channel 142a and the gas channel 142b communicate with the top end 1411, so that the gas from the gas line 16a and the gas line 16b can pass through the gas channel 142a and the gas channel 142b送到混气室141. The open end 1412 of the gas mixing chamber 141 communicates with the mixed gas channel 172 in the gas mixing block 17, and the mixed gas can be sent to the etching gas channel 171 and the reaction chamber 111 through the mixed gas channel 172. The gas passage 16a and the gas passage 16b are arranged symmetrically with respect to the central axis X1 of the gas mixing chamber 141 at the same position from the open end 1412, and perpendicular to the central axis X1 of the gas mixing chamber 141.

Please refer to the third figure. The third figure shows a top view of the gas mixing structure 14 of the first embodiment of the present invention. As shown in the figure, the gas pipe 16a and the gas pipe 16b have the same pipe diameter, communicate with the gas passage 142a and the gas passage 142b, and are rotationally symmetrically arranged with respect to the central axis X1 (ejected from a plane) of the gas mixing chamber 141 (That is, the same configuration after rotating 180 degrees). The cross section of the gas mixing chamber 141 in a plan view is circular, and the axis Y1 of the gas channel 142a and the gas channel 142b both have the same separation distance D1 in the radial direction from the central axis X1 of the gas mixing chamber 141, so that the gas The gas sent from the pipeline 16a and the gas pipeline 16b can form a vortex around the central axis X1 in the gas mixing chamber 141, so that the gas A and the gas B are uniformly mixed.

By the gas mixing structure 14 of the first embodiment of the present invention as described above, the gas A and the gas B can be uniformly mixed in the gas mixing chamber 141, and the design of the dome-shaped top 1411 can make the gas in the gas mixing chamber 141 It flows evenly without accumulation in corners, and it is easy to clean the air mixing chamber 141.

[Second Embodiment]

Please refer to the fourth picture. The fourth figure shows the gas mixing structure 24 of the second embodiment of the present invention. As shown in the figure, compared with the first embodiment, the gas mixing chamber 241 directly communicates with the etching gas line 25 so that the mixed gas follows the etching gas line 25 and enters the reaction portion 21. An upper cover plate 212 for sealing the reaction chamber 211 is provided above the reaction section 21. The reaction chamber 211 is provided with a shower plate 213 so that the reaction gas sent to the reaction chamber 211 can be evenly sprayed onto the carrier plate 214 located below the shower plate 213.

Please continue to refer to the fourth figure. The gas mixing structure 24 is formed inside: a gas mixing chamber 241; a gas channel 242a; and a gas channel 242b. As in the first embodiment, the air mixing chamber 241 has a top end 2411 and an open end 2412. The inner diameter of the gas mixing chamber 241 is more than twice that of the gas channels 242a and 242b. The top end 2411 of the gas mixing chamber 241 is domed, and the gas channel 242a and the gas channel 242b communicate with the top end 2411, so that the gas A and the gas B from the gas line 26a and the gas line 26b can pass through the gas channel 242a and The gas passage 242b is sent to the gas mixing chamber 241. The gas channel 242a and the gas channel 242b extend symmetrically with respect to the central axis X2 of the gas mixing chamber 241 at the same position from the open end 2412, and are both parallel to the central axis X2 of the gas mixing chamber 241.

By the gas mixing structure 24 of the second embodiment of the present invention as described above, the gas A and the gas B can be uniformly mixed in the gas mixing chamber 241, and the design of the dome-shaped top end 2411 can make the gas in the gas mixing chamber It flows evenly without accumulation in corners, and it is easy to clean the air mixing chamber 241.

[Third Embodiment]

Please refer to the fifth picture. The fifth figure shows the gas mixing structure 34 of the third embodiment of the present invention. The gas mixing structure 34 is formed therein with: a gas mixing chamber 341; a gas channel 342a; and a gas channel 342b. Similar to the first embodiment, the air mixing chamber 341 has a top 3411 and an open end 3412. The inner diameter of the gas mixing chamber 341 is more than twice that of the gas channels 342a and 342b. The top 3411 of the gas mixing chamber 341 is domed, and the gas channel 342a and the gas channel 342b communicate with the top 3411, so that the gas A and the gas B from the gas line 36a and the gas line 36b can pass through the gas channel 342a and The gas passage 342b is sent to the gas mixing chamber 341. In the gas mixing structure 34, the section 342a' in which the gas channel 342a communicates with the gas line 36a is along the direction perpendicular to the central axis X3 of the gas mixing chamber 341, and then the gas channel 342a is bent again to The central axis X3 is connected to the air mixing chamber 341 after an angle of α of 60 degrees. In the same way as the gas channel 342a, the section 342b' of the gas channel 342b communicating with the gas line 36b is along a direction perpendicular to the central axis X3 of the gas mixing chamber 341, and then the gas channel 342b is bent again into the gas mixing chamber 341 After the central axis X3 has a β angle of 45 degrees, it communicates with the air mixing chamber 341. The gas passage 342a and the gas passage 342b are arranged substantially symmetrically with respect to the central axis X3 of the gas mixing chamber 341.

By the gas mixing structure 34 of the third embodiment of the present invention as described above, by the design of the dome-shaped top 3411, the gas can flow uniformly in the gas mixing chamber 341 without accumulating in the corners, and it is also easy to mix Cleaning of air chamber 341. In addition, by disposing the gas channels 342a and the gas channels 342b at different angles with respect to the central axis X3 of the gas mixing chamber 341, the flow directions of the gas A and the gas B in the gas mixing chamber 341 can be effectively adjusted, and the gas can be uniformly mixed The open end 3412 flows out.

[Fourth embodiment]

Please refer to the sixth figure. The sixth figure shows a top view of the gas mixing structure 44 of the fourth embodiment of the present invention. The gas mixing structure 44 is internally formed with: a gas mixing chamber 441; a gas channel 442a; a gas channel 442b; and a gas channel 442c. Similar to the first embodiment, the air mixing chamber 441 has a top end and an open end (not shown). The inner diameter of the gas mixing chamber 441 is more than twice that of the gas passages 442a, 442b, and 442c. As shown in the figure, the gas pipeline 46a, the gas pipeline 46b and the gas pipeline 46c have the same diameter, and are respectively connected to the gas channel 442a, the gas channel 442b and the gas channel 442c to send the gas A, the gas B and the gas C To air mixing chamber 441. The gas passage 442a, the gas passage 442b, and the gas passage 442c are arranged rotationally symmetrically with respect to the central axis X4 of the gas mixing chamber 441 (that is, the same arrangement is maintained after rotating 120 degrees). The gas pipeline 46a, the gas pipeline 46b and the gas pipeline 46c all have a specific distance D4 along the line Y4 from the central axis X4 of the gas mixing chamber 441, so that the gas pipeline 46a, the gas pipeline 46b and the gas pipeline 46c The incoming gas A, gas B, and gas C can form a vortex flow around the central axis X4 of the gas mixing chamber 441 in the gas mixing chamber 441 to uniformly mix the gases.

By the gas mixing structure 44 of the fourth embodiment of the present invention as described above, the gas A, the gas B, and the gas C can be uniformly mixed in the gas mixing chamber 441. By the design of the dome-shaped top, the gas can be mixed in the gas The chamber flows evenly without accumulation in corners, and it is easy to clean the air mixing chamber 441.

So far, the preferred embodiments of the gas mixing structure of the present invention have been described by the above description and the drawings. All features disclosed in this specification may be combined with other means. Each feature disclosed in this specification may be selectively replaced by features with the same, equal or similar purpose. Therefore, in addition to the features that are particularly significant All the features disclosed in this specification are only examples of equal or similar features. After the description of the preferred embodiments of the present invention, those familiar with this technical field should understand that the present invention is indeed a novel, progressive and industrially practical invention, which is of great development value. The present invention can be modified by any person skilled in the arts (such as modifying the angles α and β between the central axis of the gas channel and the gas mixing chamber), but not as protected by the scope of the application.

10: Reaction equipment 11, 21: Reaction Department 12: Etching gas generation section 13: Air box 14, 24, 34, 44: mixed gas structure 15, 25: etching gas pipeline 17: air block 16a, 26a, 36a, 46a, 16b, 26b, 36b, 46b, 46c: gas pipeline 111, 211: reaction room 112, 212: upper cover 113, 213: spray plate 114, 214: carrier plate 141, 241, 341: air mixing room 142a, 242a, 342a, 442a, 142b, 242b, 342b, 442b, 442c: gas passage 342a’, 342b’: section 171: Etching gas channel 172: Mixed gas channel 1411, 3411: top 1412, 3412: open end D1, D4: separation distance X1, X2, X3, X4: central axis Y1, Y4: axis α, β: angle

The first figure shows a schematic structural diagram of the reaction device according to the first embodiment of the present invention.

The second figure shows a partially enlarged cross-sectional view of the reaction apparatus according to the first embodiment of the present invention.

The third figure shows a top view of the mixing chamber of the first embodiment of the present invention.

The fourth figure shows a partially enlarged cross-sectional view of the reaction device of the second embodiment of the present invention.

The fifth figure shows a side cross-sectional view of a gas mixing chamber according to a third embodiment of the invention.

The sixth figure shows a top view of the mixing chamber of the fourth embodiment of the present invention.

11: Reaction Department

14: Mixed gas structure

15: Etching gas pipeline

16a, 16b: gas pipeline

17: air block

111: Reaction room

112: upper cover

113: spray plate

114: Carrier plate

141: air mixing room

142a, 142b: gas channel

171: Etching gas channel

172: Mixed gas channel

1411: Top

1412: Open end

X1: Central axis

Claims (10)

A mixed gas structure, formed inside: An air mixing chamber with a top end and an open end; and Multiple gas channels; The top end has a dome shape, the plurality of gas passages communicate with the top end and communicate with the gas mixing chamber, and the open end is used for outflow of the mixed gas. The gas mixing structure as described in item 1 of the scope of the patent application, wherein the positions of the plurality of gas channels are different from the central axis of the gas mixing chamber. The gas mixing structure as described in item 1 of the scope of the patent application, wherein the plurality of gas passages are arranged symmetrically with respect to the central axis of the gas mixing chamber. The gas mixing structure as described in item 1 of the scope of the patent application, wherein the plurality of gas channels exhibit a rotationally symmetrical arrangement with respect to the central axis of the gas mixing chamber. The gas mixing structure as described in item 1 of the scope of the patent application, wherein the axes of the plurality of gas channels are radially spaced from the central axis of the gas mixing chamber. The gas mixing structure as described in item 5 of the scope of the patent application, wherein the spacing distances in the radial direction of the axes of the plurality of gas channels and the central axis of the gas mixing chamber are all equal. The gas mixing structure as described in item 1 of the scope of the patent application, wherein the plurality of gas channels are located at the same height position with respect to the open end. The gas mixing structure as described in item 1 of the scope of the patent application, wherein the diameter of the gas mixing chamber is greater than twice the diameter of the plurality of gas channels. A reaction equipment, including: For example, the gas mixing structure according to any one of the first to eighth items of the patent application scope; and A reaction room; Wherein the gas mixture structure is located above the reaction chamber, and the open end communicates with the reaction chamber. As in the reaction device of claim 9, the at least one of the plurality of gas channels is located above the reaction chamber than the open end.

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