JP2017522447A5 - - Google Patents

Claims (13)

A CVD or PVD reactor having a process chamber and a gas supply,
The gas supply device includes an inlet duct (22) arranged in a star shape around the center and connected to a vaporized gas source (21), and the inlet duct (22) is connected to the gas source (21). Each supplied gas flow is supplied to a first mixing chamber (12) arranged in an annular cylinder around the center;
In the first mixing chamber (12), one or more first gas deflection elements (13) cause one or more deflections of each gas flow and mixing of each gas flow, and
The gas supply device includes an overflow barrier (14), and the first gas flow composed of all the gas flows exiting the first mixing chamber (12) is directed 180 ° beyond the overflow barrier (14). The second mixing chamber (15) disposed inside the first mixing chamber (12) is changed and flows into the second mixing chamber (15). one or multiple deflection of the gas flow Ji live,
The gas supply device comprises a gas outlet duct (8), the gas outlet duct (8) from the second mixing chamber (15) to the gas inlet member (5) of the CVD or PVD coating device (1). Centrally located for the outlet of the gas flow , and
In the CVD or PVD reactor, in which the gas supply device composed of the two mixing chambers (12, 15) and the vaporized gas source (21) is arranged vertically above the process chamber (2) ,
A CVD or PVD reactor characterized in that the effective stroke length of each gas flow from the gas source (21) to the gas inlet member (5) is the same . It said inlet duct (22) is facing is disposed on the inlet plane and a common center, to claim 1, characterized in that the gas outlet duct (8) extends in a direction crossing the inlet plane The described CVD or PVD reactor. The first mixing chamber (12) is a premixing chamber and includes a first gas deflecting element (13) that generates a stratified change in the direction of each gas flow, and the second mixing chamber (15) generates vortex A CVD according to claim 1 or 2 , characterized in that it comprises a second gas deflection element (16) for generating a vortex-like second gas flow in the second mixing chamber (15). Or PVD reactor. The first or second of the gas deflecting elements (13, 16) is, CVD or PVD according to any one of claims 1 to 3, characterized in that it is arranged on top of each other in the flow direction at a plurality of stages Reactor. The first or second mixing chamber (12, 15) is formed from concentric tubes (18, 19), which flow and pass in opposite directions. 5. The CVD or PVD reactor according to any one of 4 above. The first or second of the mixing chamber diameter (12, 15), one of the claims 1-5, characterized in that shorter than the axial height of the first or second of the mixing chamber (12, 15) A CVD or PVD reactor according to claim 1. According to the gas source (21) and the mixing chamber (12, 15), one of claims 1-6, characterized in that it is located directly above the top wall of the reactor housing (1) CVD or PVD reactor. CVD or PVD Reactor according to any one of claims 1 to 7, characterized in that there are additional gas inlet duct for the inflow of the dilution gas flow (22 '). A method for supplying process gas to a gas inlet member (5) of a CVD or PVD coating apparatus comprising:
Supplying each of a plurality of process gases to a respective gas source (21);
Separating each of the plurality of process gases as a respective gas stream from each other gas stream and sending the gas from the respective gas source (21) through the respective inlet ducts (22) to the first mixing chamber (12);
Deflecting each gas flow using the first gas deflection element (13) in the first mixing chamber (12) and mixing each gas flow;
Overflowing the first gas stream comprising all gas streams over the overflow barrier (14) into the second mixing chamber (15);
Deflecting the gas flow using a second gas deflection element (16);
Delivering a gas stream comprising all the respective gas streams from a gas outlet duct (8) to the gas inlet member (5),
Method, characterized in that the effective residence time of the gas in the stroke between the gas source (21) and the gas inlet member (5) differs by a maximum of 10 milliseconds. The method according to claim 9 , characterized in that the effective residence time of the gas in the stroke between the gas source (21) and the gas inlet member (5) is shorter than 100 milliseconds. The first gas deflecting element (13) disposed in the first mixing chamber (12) deflects each gas flow in a layered manner and / or the first gas deflecting element (13) disposed in the second mixing chamber (15). 11. A method according to claim 9 or 10 , characterized in that the two-gas deflection element (16) produces a vortexed second gas flow. Gas flow in the inlet duct (22), according to any one of claims 9 to 11, it is characterized in that each gas flow is set to leave the respective inlet duct (22) at the same average gas velocity the method of. 12. Method according to any one of claims 9 to 11 , characterized in that a dilution gas stream is supplied through an additional inlet duct (22 ').