CN220503189U - Spray header for semiconductor equipment - Google Patents
Spray header for semiconductor equipment Download PDFInfo
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- CN220503189U CN220503189U CN202321490218.0U CN202321490218U CN220503189U CN 220503189 U CN220503189 U CN 220503189U CN 202321490218 U CN202321490218 U CN 202321490218U CN 220503189 U CN220503189 U CN 220503189U
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- spray
- showerhead
- face
- plane
- air inlet
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- 239000007921 spray Substances 0.000 title claims abstract description 83
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 230000000149 penetrating effect Effects 0.000 claims abstract description 19
- 230000007704 transition Effects 0.000 claims description 20
- 238000005507 spraying Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The embodiment of the utility model provides a spray header for semiconductor equipment, and relates to the technical field of semiconductors. The spray header for the semiconductor device comprises a spray plate, wherein the spray plate is provided with an air inlet surface, a spray surface and a plurality of spray holes penetrating the air inlet surface and the spray surface, the spray surface is gradually recessed towards the air inlet surface from the outer edge to the central area to form a non-planar structure, so that the deposition rates of gas sprayed from the spray holes are different in the central area and the edge area of the spray surface, the film thickness of the central area and the film thickness of the edge area of a deposited film on a wafer are changed, the film thickness of the deposited film on the wafer is controlled, the overall film thickness of the deposited film on the wafer can be controlled better, and the uniformity of the deposited film on the wafer is controlled better.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a spray header for semiconductor equipment.
Background
The design of the showerhead, which is a planar faceplate with a porous structure, is critical to the uniformity of the film thickness of the deposited film on the wafer, and is typically used to distribute gases.
The shower head in the prior art has the problem that the whole film thickness of the deposited film on the wafer is difficult to control when in use, so that the uniformity of the deposited film on the wafer is difficult to control.
Disclosure of Invention
The utility model provides a spray header for semiconductor equipment, which can better control the overall film thickness of a deposited film on a wafer in a spray process, thereby better controlling the uniformity of the deposited film on the wafer.
Embodiments of the utility model may be implemented as follows:
embodiments of the present utility model provide a showerhead for a semiconductor apparatus, comprising:
the spray plate is provided with an air inlet surface and a spray surface which are opposite to each other, and a plurality of spray holes penetrating through the air inlet surface and the spray surface;
the spraying surface gradually sinks towards the air inlet surface from the outer edge to the central area so as to form a non-planar structure.
In an alternative embodiment, the spray face is a stepped plane.
In an alternative embodiment, the spraying surface comprises an inner plane, a transition surface and an outer plane, wherein the transition surface and the outer plane are sequentially connected outside the inner plane in a surrounding manner from inside to outside, the distance between the inner plane and the air inlet surface is smaller than the distance between the outer plane and the air inlet surface, and the transition surface is obliquely arranged between the inner plane and the outer plane.
In an alternative embodiment, the area of the outer plane and the area of the inner plane are equal.
In an alternative embodiment, the spray face is a ramp-type plane.
In an alternative embodiment, the spray face comprises an inner plane and an inclined face surrounding the inner plane, the inclined face being arranged obliquely with respect to the inner plane.
In an alternative embodiment, the radius of the inner plane is 130mm.
In an alternative embodiment, the arrangement density of the plurality of spray holes penetrating the inclined surface is greater than the arrangement density of the plurality of spray holes penetrating the inner plane.
In an alternative embodiment, the spray hole comprises a choke hole, a transition hole and a horn hole which are communicated in sequence, wherein the choke hole penetrates through the air inlet surface, and the horn hole penetrates through the spray surface.
In an alternative embodiment, the smaller diameter end of the bell mouth communicates with the transition orifice, and the larger diameter end of the bell mouth extends through the spray face.
The shower head for the semiconductor device has the advantages that:
the spray header for the semiconductor device comprises a spray plate, wherein the spray plate is provided with an air inlet surface, a spray surface and a plurality of spray holes penetrating through the air inlet surface and the spray surface, and the spray surface is gradually recessed towards the air inlet surface from the outer edge to the central area of the spray surface so that the spray surface forms a non-planar structure. When the spray header for the semiconductor device is used, one end of the spray holes penetrating through the air inlet surface is used for being connected with an external air source, air is sprayed out from one end of the spray holes penetrating through the spray surface through the spray holes, and as the spray surface gradually sinks towards the air inlet surface from the outer edge to the central area of the spray surface to form a non-planar structure, the deposition rates of the air in the central area and the edge area of the spray surface after being sprayed out from the spray holes are different, so that the film thickness of the central area and the film thickness of the edge area of a deposited film on a wafer are changed, the film thickness of the deposited film on the wafer is controlled, the spray header for the semiconductor device changes the length of the spray holes by changing the shape of the spray surface, the flow resistance of the air in the spray holes is also changed by changing the length of the spray holes, and therefore the uniformity of the deposited film on the wafer is controlled, the integral film thickness of the deposited film on the wafer can be better controlled, and the uniformity of the deposited film on the wafer is better controlled.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a first view angle of a showerhead for a semiconductor apparatus according to the present embodiment;
fig. 2 is a schematic structural diagram of a second view angle of a showerhead for a semiconductor apparatus according to the present embodiment;
fig. 3 is a schematic structural diagram of a third view angle of a showerhead for a semiconductor apparatus according to the present embodiment.
Icon: 100-spraying heads; 110-an air inlet surface; 120-spraying surface; 121-an inner plane; 122-inclined plane; 123-transition surface; 124-an outer plane; 130-spray holes; 131-choke holes; 132-transition holes; 133-flare.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present utility model, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present utility model and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present utility model.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present utility model may be combined with each other without conflict.
The design of the showerhead 100 is critical to the uniformity of the film thickness of the deposited film on the wafer, the showerhead 100 being a planar faceplate having a porous structure, typically the showerhead 100 being used to distribute gases.
The showerhead 100 of the prior art has a problem in that it is difficult to control the overall film thickness of the deposited film on the wafer when in use, resulting in difficulty in controlling the uniformity of the deposited film on the wafer.
Referring to fig. 1-3, the present embodiment provides a showerhead 100 for a semiconductor device, which can effectively improve the above-mentioned technical problems, and can better control the overall film thickness of a deposited film on a wafer during a spraying process, thereby better controlling the uniformity of the deposited film on the wafer.
Referring to fig. 1-3, the present embodiment provides a showerhead 100 for a semiconductor device, which includes a shower plate having opposite air inlet surfaces 110 and shower surfaces 120 and a plurality of shower holes 130 penetrating the air inlet surfaces 110 and the shower surfaces 120, wherein the shower surfaces 120 are gradually recessed toward the air inlet surfaces 110 from an outer edge to a central region thereof to form a non-planar structure.
The lower surface of the showerhead 100 in the related art is mostly of a planar structure, and the showerhead 100 of the planar structure has a problem in that it is difficult to control the overall film thickness of the deposited film on the wafer, resulting in difficulty in controlling the uniformity of the deposited film on the wafer. In order to solve the above-mentioned technical problem, the showerhead 100 for a semiconductor device provided in this embodiment includes a shower plate having an air inlet face 110 and a shower face 120 opposite to each other and a plurality of shower holes 130 penetrating the air inlet face 110 and the shower face 120, and the shower face 120 is gradually recessed toward the air inlet face 110 from its outer edge to a central region, so that the shower face 120 forms a non-planar structure. When the showerhead 100 for a semiconductor device is used, one end of the spray holes 130 penetrating through the air inlet surface 110 is used for being connected with an external air source, air is sprayed out from one end of the spray holes 130 penetrating through the spray surface 120, and as the spray surface 120 gradually sinks towards the air inlet surface 110 from the outer edge to the central area of the spray surface 120 to form a non-planar structure, the deposition rates of the air in the central area and the edge area of the spray surface 120 after being sprayed out from the spray holes 130 are different, so that the film thickness of the central area of a deposited film on a wafer and the film thickness of the edge area are changed, and the film thickness of the deposited film on the wafer is controlled.
Specifically, the spray face 120 has the effect of improving the reaction zone edge plasma field and flow field, thereby achieving the adjustment of the uniformity of wafer film formation.
The shower surface 120 is configured to be a stepped plane, so that the geometry of the shower holes 130 penetrating one end of the shower surface 120 is changed, and thus the gas flow of the gas emitted from the shower holes 130 is changed, thereby controlling the uniformity of the deposited film on the wafer.
Referring to fig. 2 and 3, the spray hole 130 includes a choke hole 131, a transition hole 132 and a flare hole 133 which are sequentially and coaxially connected, i.e. two ends of the transition hole 132 are respectively connected with the choke hole 131 and the flare hole 133, the choke hole 131 penetrates the air inlet surface 110, and the flare hole 133 penetrates the spray surface 120. Specifically, the smaller diameter end of the flare opening 133 communicates with the transition opening 132, and the larger diameter end of the flare opening 133 extends through the spray face 120.
Wherein, the choke hole 131 and the transition hole 132 are both cylindrical holes, and the diameter of the choke hole 131 is smaller than that of the transition hole 132 to realize the choke function. The diameter of the port of the flare hole 133 communicating with the transition hole 132 is smaller than the diameter of the port of the other end of the flare hole 133. The bell mouth 133 has the effect of enhancing the passage of plasma.
With continued reference to fig. 2 in combination with fig. 1, the spray face 120 may be a sloped plane.
Specifically, the spraying surface 120 includes an inner plane 121 and an inclined surface 122 surrounding and connected to the outer side of the inner plane 121, i.e., the inclined surface 122 is ring-shaped, the outer circumferential edge of the inner plane 121 is connected to the inner circumferential edge of the inclined surface 122, and the inclined surface 122 is inclined with respect to the inner plane 121.
In this embodiment, the radius of the inner plane 121 is 130mm.
Specifically, the arrangement density of the plurality of spray holes 130 penetrating the inclined surface 122 is greater than the arrangement density of the plurality of spray holes 130 penetrating the inner plane 121, that is, the arrangement density of the spray holes 130 in the central region of the spray plate is smaller than the arrangement density of the spray holes 130 in the annular edge region of the spray plate outside the central region, so that the air flow blown toward the central region of the air inlet surface 110 can be more dispersed to the annular edge region outside the central region.
Referring to fig. 3, the spraying surface 120 in the present embodiment may be a stepped plane.
Specifically, the spraying surface 120 includes an inner plane 121, and a transition surface 123 and an outer plane 124 which are sequentially connected outside the inner plane 121 in a surrounding manner from inside to outside, that is, the transition surface 123 and the outer plane 124 are both annular, the inner peripheral edge of the transition surface 123 is connected to the outer peripheral edge of the inner plane 121 in a surrounding manner, and the inner peripheral edge of the outer plane 124 is connected to the outer peripheral edge of the transition surface 123 in a surrounding manner, wherein the distance between the inner plane 121 and the air inlet 110 is smaller than the distance between the outer plane 124 and the air inlet 110, and the transition surface 123 is obliquely arranged between the inner plane 121 and the outer plane 124.
In the present embodiment, the area of the outer plane 124 and the area of the inner plane 121 are equal.
In addition, in order to simplify the processing steps of the shower holes 130, the shower holes 130 are processed by machining in this embodiment.
The shower head 100 for a semiconductor device provided in this embodiment has the advantages of:
the lower surface of the showerhead 100 in the related art is mostly of a planar structure, and the showerhead 100 of the planar structure has a problem in that it is difficult to control the overall film thickness of the deposited film on the wafer, resulting in difficulty in controlling the uniformity of the deposited film on the wafer. In order to solve the above-mentioned technical problem, when the showerhead 100 for a semiconductor device provided in this embodiment is in use, the end of the spray hole 130 penetrating the air inlet surface 110 is connected to an air source, and air is sprayed out through the end of the spray hole 130 penetrating the spray surface 120, and since the spray surface 120 gradually pits from its outer edge to the central region to form a non-planar structure toward the air inlet surface 110, the deposition rates of the air sprayed out from the spray hole 130 in the central region and the edge region of the spray surface 120 are different, so that the film thickness of the central region and the film thickness of the edge region of the deposited film on the wafer are changed, and thus the film thickness of the deposited film on the wafer is controlled.
The present utility model is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present utility model are intended to be included in the scope of the present utility model. Therefore, the protection scope of the utility model is subject to the protection scope of the claims.
Claims (9)
1. A showerhead for a semiconductor apparatus, comprising:
the spray plate is provided with an air inlet surface and a spray surface which are opposite to each other, and a plurality of spray holes penetrating through the air inlet surface and the spray surface;
the spraying surface gradually sinks towards the air inlet surface from the outer edge to the central area so as to form a non-planar structure;
the spray hole comprises a choke hole, a transition hole and a horn hole which are sequentially communicated, the choke hole penetrates through the air inlet surface, and the horn hole penetrates through the spray surface.
2. The showerhead for a semiconductor apparatus of claim 1, wherein the spray face is a stepped planar face.
3. The showerhead for a semiconductor device according to claim 2, wherein the showerhead face comprises an inner plane and a transition face and an outer plane which are sequentially connected around the inner plane from the inner side to the outer side, wherein a distance between the inner plane and the air inlet face is smaller than a distance between the outer plane and the air inlet face, and the transition face is obliquely arranged between the inner plane and the outer plane.
4. The showerhead for a semiconductor device of claim 3, wherein the outer plane and the inner plane are equal in area.
5. The showerhead for a semiconductor apparatus of claim 1, wherein the spray face is a sloped plane.
6. The showerhead for a semiconductor device according to claim 5, wherein the showerhead face comprises an inner plane and an inclined face surrounding and connected to the outer side of the inner plane, the inclined face being disposed obliquely with respect to the inner plane.
7. The showerhead for a semiconductor apparatus of claim 6, wherein the radius of the inner plane is 130mm.
8. The showerhead for a semiconductor device according to claim 6, wherein a set density of the plurality of shower holes penetrating the inclined surface is greater than a set density of the plurality of shower holes penetrating the inner plane.
9. The showerhead for a semiconductor apparatus of claim 1, wherein the smaller diameter end of the bell mouth communicates with the transition orifice and the larger diameter end of the bell mouth extends through the showerhead face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321490218.0U CN220503189U (en) | 2023-06-12 | 2023-06-12 | Spray header for semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321490218.0U CN220503189U (en) | 2023-06-12 | 2023-06-12 | Spray header for semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220503189U true CN220503189U (en) | 2024-02-20 |
Family
ID=89879168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321490218.0U Active CN220503189U (en) | 2023-06-12 | 2023-06-12 | Spray header for semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220503189U (en) |
-
2023
- 2023-06-12 CN CN202321490218.0U patent/CN220503189U/en active Active
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