TW202017116A - Package, method of manufacturing package, lid body with bonding material, and method of manufacturing lid body with bonding material - Google Patents

Abstract

This package includes a substrate, a lid body, and a bonding layer that bonds the lid body to the substrate. The bonding layer includes a first metallized layer formed in a frame-shape having a predetermined width on a main surface of the lid body, and a braze layer laminated on the first metallized layer on a side opposite the lid body. The first metallized layer on the surface bonded to the lid body has a width that is greater than the width of the braze layer.

Description

Packaging, packaging manufacturing method, cover body with bonding material, and manufacturing method of cover body with bonding material

The present invention relates to a package, a package manufacturing method, a cover with a bonding material, and a method for manufacturing a cover with a bonding material.

Previously, there have been developed packages that seal components such as semiconductors to protect them. Specifically, the device is placed on a base material composed of ceramics or the like, and a lid is adhered to the base material using a bonding material such as metal solder or glass paste, thereby forming a package.

Choose the base material, cover, and bonding material for encapsulation according to the application. Here, when the difference in the expansion coefficient between the base material or the cover and the bonding material is large, excessive stress may act on the cover, and the members may be damaged, cracked, or peeled off.

In order to solve this problem, a technology has been developed in which a plurality of material layers are bonded by stacking between the packaging substrate and the lid. For example, in Patent Document 1, a high-temperature sealing material and a bonding layer are provided between the packaging substrate and the lid, and the bonding layer includes a metallization layer and a stress relaxation layer.

Patent Literature 1: International Publication No. 2014/148457

In Patent Document 1, a metal cover is used as the cover. However, when sealing an optical element such as an LED element as a package, for example, a substrate having light transmittance such as glass is used as the cover.

However, since glass is a brittle material, it is easy to be damaged due to stress, and it may not be possible to sufficiently suppress the damage by using a multilayer structure as in the prior art. In addition, even if it is not damaged, there may be problems that the bonding layer is peeled off from the lid, or the airtightness of the seal is broken. That is, there is room for improvement in the prior art.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a package for suppressing breakage and the like in a package using glass, a package manufacturing method, a cover with a bonding material, and a method for manufacturing a cover with a bonding material.

The package of the present invention includes a base layer, a cover body, and a bonding layer for bonding the cover body to the base material, characterized in that the bonding layer includes: a first metallization layer formed on the main surface of the cover body with a predetermined bandwidth Frame-shaped; and the brazing material layer, which is deposited on the first metallization layer on the side opposite to the cover body, the bandwidth of the bonding surface of the first metallization layer and the cover body is larger than that of the solder layer.

According to this configuration, it is possible to reduce the stress acting on the lid body and suppress the occurrence of breakage and the like.

In the package of the present invention, it is preferable that the bandwidth of the bonding surface of the first metallization layer and the cover is 1.025 to 2.0 times the bandwidth of the solder layer.

In the package of the present invention, it is preferable that the first metallization layer may have a plurality of metal layers with different linear thermal expansion coefficients. The closer the stacked position of each of the plurality of metal layers is to the cover, the closer to the cover The smaller the difference in linear thermal expansion coefficient between 20 and 400°C.

In the package of the present invention, it is preferable that the first metallization layer includes a first metal layer bonded to the cover and a second metal layer disposed on the side of the solder layer closer to the first metal layer as a plurality of metal layers, the first The bandwidth of the metal layer is greater than the bandwidth of the second metal layer.

A wetting prevention layer may be provided on the surface of the first metal layer beyond the second metal layer. The anti-wetting layer may be an oxide of the metal constituting the first metal layer.

In the package of the present invention, it is preferable that the first metallization layer sequentially include a Cr layer, a Ni layer, and an Au layer as a plurality of metal layers from the lid side.

In the package of the present invention, it is preferable that the bonding layer is further provided with a second metallization layer formed on the substrate into a frame shape with a predetermined bandwidth, and the solder layer is sandwiched between the first metallization layer and the second metallization layer.

In the package of the present invention, it is preferable that the bandwidth of the bonding surface of the second metallization layer and the substrate is larger than the bandwidth of the solder layer.

In the package of the present invention, it is preferable that the bandwidth of the bonding surface of the second metallization layer and the substrate is 0.9 to 1.1 times the bandwidth of the bonding surface of the first metallization layer and the cover.

In the package of the present invention, it is preferable that the maximum tensile stress of the main surface of the cover with the first metallization layer be 1000 MPa or less.

In the package of the present invention, the thickness of the first metallization layer is preferably 1 to 4 μm, and the thickness of the solder layer is 5 to 50 μm.

In the package of the present invention, it is preferable that the lid is composed of SiO ₂ 55 to 75% by mass, Al ₂ O ₃ 1 to 10% by mass, B ₂ O ₃ 10 to 30% by mass, CaO 0 to 5% by mass, and BaO 0 to The glass composition is 5 mass%, Li ₂ O+Na ₂ O+K ₂ O 1.0-15 mass%, and has a flat shape with a thickness of 30-500 μm.

In the package of the present invention, the preferred solder layer is metal solder containing 10 to 80% by mass of Au and 90 to 20% by mass of Sn.

In the package of the present invention, it is preferable that the base material has a container shape having a wall portion forming an opening, the cover body closes the opening, the bonding layer is provided between the top end portion of the wall portion and the cover body, and the package is further provided to be accommodated in the base material Of electronic components.

The packaging manufacturing method of the present invention includes a bonding step of bonding a glass cover and a substrate, and the bonding step includes the step of laminating the first metallization layer on the main surface of the cover to have a predetermined bandwidth Frame-like step; and the step of laminating the solder on the first metallization layer on the side opposite to the lid body to form the first metallization layer and the solder in such a way that the bandwidth of the first metallization layer is larger than that of the solder layer Floor.

In other words, the package of the present invention is a package having a base material, a cover body, and a solder layer, and may be characterized in that at least one of the cover body and the solder layer or between the solder layer and the base material is formed to have a predetermined bandwidth The frame-shaped metallization layer has a wider bandwidth than the solder layer on the bonding surface of the metallization layer and the cover or substrate.

The cover body with a bonding material of the present invention includes a cover body and a bonding layer for bonding the cover body to other members, characterized in that the bonding layer includes: a first metallization layer formed on the main surface of the cover body to have The frame shape with a fixed bandwidth; and the solder layer are deposited on the first metallization layer on the side opposite to the cover body. The bandwidth of the junction surface of the first metallization layer and the cover body is greater than the bandwidth of the solder layer.

The method for manufacturing a cover body with a bonding material according to the present invention is characterized by comprising: a step of laminating a first metallization layer on the main surface of the cover body into a frame shape having a predetermined bandwidth; In the step of laminating the solder on the first metallization layer, the first metallization layer and the solder layer are formed in such a manner that the bandwidth of the first metallization layer is larger than the bandwidth of the solder layer.

According to the present invention, it is possible to obtain a package having a high airtightness and not easily broken, a package manufacturing method, a cover with a bonding material, and a method for manufacturing a cover with a bonding material.

Hereinafter, the package of the embodiment of the present invention will be described.

As shown in FIG. 1, the package 1 according to the embodiment of the present invention includes a base 2, a lid 3, and a bonding layer 4. The lid 3 is bonded to the base material 2 via the bonding layer 4.

The base material 2 is a member on which the electronic component 5 can be provided. In the present embodiment, the base material 2 has a container shape capable of accommodating the electronic component 5. The base material 2 includes a bottom portion 2B and a wall portion 2S. The wall portion 2S is a wall body erected from the plate-shaped bottom portion 2B. A bonding layer 4 is provided on the tip portion 2E of the wall portion 2S to bond the base material 2 and the lid 3. The tip portion 2E is configured as a flat surface having a predetermined width (width Ws shown in FIG. 2 ). The width Ws of the tip portion 2E is, for example, 300 to 1000 μm. The wall portion 2S has a frame shape when viewed from above (as viewed in the Z direction in FIG. 1 ). The substrate 2 is made of, for example, aluminum nitride. In addition, as the material of the base material 2, for example, any material used for packaging and sealing purposes such as silicon nitride and a multilayer ceramic sintered body can be selected or used in combination. In addition, a wiring or a circuit connected to the electronic component 5 can be formed on the base material 2.

As the electronic element 5, any element such as a light emitting element such as LED, a light receiving element such as CCD or CMOS, or a vibrator can be used.

The lid 3 is a member made of glass bonded to the base 2. In this embodiment, the lid 3 is a flat glass plate that seals the opening of the base 2. The thickness Tg of the cover 3 is preferably 30 to 500 μm, and more preferably 200 to 500 μm. If the thickness of the lid 3 is 500 μm or less, the stress received from the bonding layer 4 is easily relaxed, and damage is easily suppressed. In addition, if the thickness of the lid 3 is 200 μm or more, the mechanical strength required for packaging applications can be ensured. The shape of the lid 3 is preferably a shape corresponding to the opening of the base 2. In this embodiment, since the opening of the base material 2 is rectangular, the cover 3 is also rectangular plate-shaped. In addition, when the opening of the base material 2 is, for example, circular, it is preferable that the shape of the lid 3 be a disk shape.

Although the glass composition of the cover 3 can be set arbitrarily, it is preferable that, for example, when the electronic component 5 is an element that emits or receives ultraviolet light, the cover 3 contains 55 to 75% by mass of SiO ₂ and Al ₂ O ₃ 1 to 10 mass%, B ₂ O ₃ 10-30 mass%, CaO 0-5 mass%, BaO 0-5 mass%, Li ₂ O+Na ₂ O+K ₂ O 1.0-15 mass% glass. With such a glass composition, high ultraviolet transmittance can be obtained.

The bonding layer 4 is a material layer that bonds the base material 2 and the lid 3. The bonding layer 4 is formed in a frame shape with a predetermined width between the tip portion 2E and the lid 3 so as to surround the opening of the base material 2. In this embodiment, the bonding layer 4 includes the metallization layer 6 and the solder layer 7. The metallization layer 6 includes a first metallization layer 6a and a second metallization layer 6b. Each of the first metallization layer 6a and the second metallization layer 6b is a metal thin film layer. The solder layer 7 is, for example, a layer formed by melting and solidifying solder (bonding material) such as AuSn alloy paste.

The bonding layer 4 is formed by sequentially stacking a first metallization layer 6a, a solder layer 7 and a second metallization layer 6b from the lid 3 side. In other words, the solder layer 7 is deposited on the first metallization layer 6b on the side opposite to the lid 3. That is, the solder layer 7 is formed on the first metallization layer 6b on the side opposite to the lid 3. In addition, the solder layer 7 is sandwiched and formed between the first metallization layer 6a and the second metallization layer 6b. In addition, the second metallization layer 6b is formed between the solder layer 7 and the tip portion 2E.

As shown in FIG. 2, among the main surfaces of the lid 3, the surface on the side where the bonding layer 4 is bonded, that is, the vicinity of the main surface on which the first metallization layer 6 a is laminated, forms a compressive stress region 3C having compressive stress and having a resistance Tensile stress area 3T. More specifically, when the solder layer 7 is formed, by heating and cooling the solder, the solder shrinks, and a compressive stress acts on the adjacent first metallization layer 6a and the lid 3. At this time, a compressive stress region 3C is formed near the main surface of the lid 3, and a tensile stress region 3T is formed at both ends (around) of the compressive stress region 3C to achieve a stress balance with the compressive stress. In addition, the formation position of the tensile stress region 3T coincides with the vicinity of the end of the first metallization layer 6 a in the belt width direction. Since the tensile stress in the tensile stress region 3T may cause damage to the lid 3 and peeling of the bonding layer 4, it is preferably small. Specifically, the maximum tensile stress in the tensile stress region 3T is preferably 1000 MPa or less, more preferably 800 MPa or less, and further preferably 500 MPa or less.

The bandwidth Wma of the joint surface of the first metallization layer 6 a and the lid 3 is larger than the bandwidth Wp of the solder layer 7. That is, both ends of the bandwidth of the first metallization layer 6a are each formed to extend beyond the both ends of the bandwidth of the solder layer 7 to the outside. The bandwidth Wma of the bonding surface of the first metallization layer 6a and the lid 3 is preferably 1.025 to 2.0 times the bandwidth Wp of the solder layer 7. With such a structure, the stress acting from the bonding layer 4 to the lid 3 can be relaxed. Furthermore, the bandwidth Wma of the joint surface of the first metallization layer 6a and the lid 3 exceeds, for example, 100 μm and does not reach 500 μm. The bandwidth Wp of the solder layer 7 is, for example, 100 to 500 μm. In addition, the thickness Tma of the first metallization layer 6a is preferably 1 to 4 μm. Furthermore, when the bandwidth of the solder layer 7 is not constant in the thickness direction, the maximum bandwidth in the thickness direction is set as the bandwidth of the solder layer 7 of the present invention.

It is preferable that the bandwidth Wmb of the bonding surface of the second metallization layer 6 b and the base material 2 (tip portion 2E) is also larger than the bandwidth Wp of the solder layer 7. That is, it is preferable that both ends of the bandwidth of the second metallization layer 6b are formed to extend beyond the both ends of the bandwidth of the solder layer 7 to the outside. More specifically, the bandwidth Wmb of the second metallization layer 6b is preferably 1.025 to 2.0 times the bandwidth Wp of the solder layer 7. With such a configuration, the stress generated in the bonding layer 4 and the base material 2 can be relaxed, and defects such as cracking or peeling in the bonding layer 4 can be suppressed. Furthermore, the bandwidth Wmb of the second metallization layer 6b is preferably the same size as the bandwidth Wma of the first metallization layer 6a. Specifically, it is preferable that the bandwidth Wmb of the second metallization layer 6b on the bonding surface with the base material 2 (tip portion 2E) is 0.9 to 1.1 of the bandwidth Wma of the first metallization layer 6a on the bonding surface with the lid 3 Times, more preferably 0.98 to 1.02 times, the best is Wmb = Wma.

The solder layer 7 is preferably composed of a material having high wettability to the first metallization layer 6a and the second metallization layer 6b. For example, the solder layer 7 is preferably a metal solder containing 10 to 80% by mass of Au and 90 to 20% by mass of Sn. Furthermore, the metal solder constituting the solder layer 7 is not limited to the above composition, and may contain any additives, adhesives, etc., or a known paste solder or alloy solder paste may be used. The thickness Tp of the solder layer 7 is, for example, 5 to 50 μm, preferably 10 to 40 μm, and more preferably 15 to 25 μm. By setting the thickness Tp of the solder layer 7 in this way, proper sealing workability can be ensured, and at the same time, the stress acting on the adjacent first metallization layer 6a, second metallization layer 6b, cover 3 and wall portion 2S can be reduced.

As shown in FIG. 3, each of the first metallization layer 6a and the second metallization layer 6b preferably includes a plurality of metal layers having different linear thermal expansion coefficients.

The first metallization layer 6a includes, for example, a metal layer 6aα, a metal layer 6aβ, and a metal layer 6aγ as a plurality of metal layers in order from the side close to the lid 3. Preferably, the linear thermal expansion coefficient of the metal layer 6aα is smaller than the linear thermal expansion coefficient of the metal layer 6aβ, and the linear thermal expansion coefficient of the metal layer 6aβ is smaller than the linear thermal expansion coefficient of the metal layer 6aγ. According to this structure, the stress acting on the lid 3 can be appropriately relaxed. The metal layer 6aα is, for example, a Cr layer or a Ti layer. The metal layer 6aβ is, for example, a Ni layer or a Pt layer. The metal layer 6aγ is, for example, an Au layer or an AuSn alloy layer. Furthermore, the thickness of the metal layer 6aα is preferably 0.01 to 0.3 μm. The thickness of the metal layer 6aβ is preferably 0.3 to 3 μm. The thickness of the metal layer 6aγ is preferably 0.1 to 1 μm.

Preferably, the second metallization layer 6b is formed symmetrically with the first metallization layer 6a based on the central portion of the solder layer 7 in the thickness direction. Specifically, the second metallization layer 6b is sequentially provided with a metal layer 6bα from the side close to the base material 2, and the metal layer 6bβ and the metal layer 6bγ as a plurality of metal layers. Preferably, the linear thermal expansion coefficient of the metal layer 6bα is smaller than the linear thermal expansion coefficient of the metal layer 6bβ, and the linear thermal expansion coefficient of the metal layer 6bβ is smaller than the linear thermal expansion coefficient of the metal layer 6bγ. According to this structure, the stress acting on the base material 2 or the bonding layer 4 can be appropriately relaxed. The metal layer 6b is, for example, a Cr layer or a Ti layer. The metal layer 6bβ is, for example, a Ni layer or a Pt layer. The metal layer 6bγ is, for example, an Au layer or an AuSn alloy layer. In addition, the thickness of the metal layer 6bα is preferably 0.01 to 0.3 μm. In addition, the thickness of the metal layer 6bβ is preferably 0.3 to 3 μm. In addition, the thickness of the metal layer 6bγ is preferably 0.1 to 1 μm.

The linear thermal expansion coefficient of the substrate 2 at 20 to 400°C is preferably 5 to 70×10 ^-7 /°C. The linear thermal expansion coefficient of the cover 3 at 20 to 400°C is preferably 5 to 70×10 ^-7 /°C. The linear thermal expansion coefficient of the solder layer 7 at 20 to 400°C is preferably 100 to 200×10 ^-7 /°C. The linear thermal expansion coefficients of the metal layer 6aα, the metal layer 6aβ, and the metal layer 6aγ at 20 to 400°C are each preferably greater than the linear thermal expansion coefficient of the lid 3 and smaller than the linear thermal expansion coefficient of the solder layer 7. In addition, the linear thermal expansion coefficients of the metal layer 6bα, the metal layer 6bβ, and the metal layer 6bγ at 20 to 400°C are each preferably greater than the linear thermal expansion coefficient of the base material 2 and smaller than the linear thermal expansion coefficient of the solder layer 7.

For each of the plural metal layers (6aα, 6aβ, 6aγ) constituting the first metallization layer 6a, the closer the stacking position is to the cover 3, the smaller the difference between the linear thermal expansion coefficients of the cover 3 and 20 to 400°C is . For example, the difference between the linear thermal expansion coefficient of the cover 3 and the metal layer 6aα at 20 to 400°C is Δaα, and the difference between the linear thermal expansion coefficient of the cover 3 and the metal layer 6aβ at 20 to 400°C is Δaβ, and the cover When the difference between the linear thermal expansion coefficients of the body 3 and the metal layer 6aγ at 20°C to 400°C is Δaγ, it is preferable to satisfy Δaα>Δaβ>Δaγ. According to this configuration, separation (peeling) between the metal layers is also suppressed, and high airtightness can be obtained in the package 1.

For each of the plurality of metal layers (6bα, 6bβ, 6bγ) constituting the second metallization layer 6b, the closer the stacking position is to the tip portion 2E, the smaller the difference between the linear thermal expansion coefficients of the substrate 2 and 20 to 400°C is . For example, the difference between the linear thermal expansion coefficients of the substrate 2 and the metal layer 6bα at 20°C to 400°C is Δbα, and the difference between the linear thermal expansion coefficients of the substrate 2 and the metal layer 6bβ at 20°C to 400°C is Δbβ, and When the difference between the linear thermal expansion coefficients of the substrate 2 and the metal layer 6bγ at 20° C. to 400° C. is Δbγ, it is preferable to satisfy Δbα>Δbβ>Δbγ. According to this configuration, separation (peeling) between the metal layers is also suppressed, and high airtightness can be obtained in the package 1.

Hereinafter, the method of manufacturing the package 1 of the present invention described above will be described using FIGS. 4 to 6. First, the base material 2 and the lid 3 are prepared.

As shown in FIGS. 4 and 5, for the base material 2, first, a second metallization layer 6 b is formed on the tip portion 2E of the base material 2 using a sputtering method or the like. Next, the electronic component 5 is placed inside the base 2.

For the lid 3, as shown in FIGS. 4 and 6, first, a first metallization layer 6a is formed on one main surface using a sputtering method or the like. Next, solder (bonding material) is printed (applied) on the first metallization layer 6a by a screen printing method to form the solder layer 7. Thus, a lid body with a joining material is obtained. At this time, as described above, the first metallization layer 6a and the solder layer 7 are formed so that the bandwidth Wma of the bonding surface of the first metallization layer 6a and the lid 3 is larger than the bandwidth Wp of the solder layer 7. In addition, after the solder is applied, heat treatment may be performed to make the solder flow or to evaporate the solvent.

The conditions when the solder is screen-printed can be appropriately set according to the target thickness Tp and the bandwidth Wp of the solder layer 7. For example, a mesh mask with a wire diameter of 25 to 45 μm and a mesh of 180 to 270 mesh can be used, or a blade with a hardness of 70 to 100 degrees can be used at an angle of attack of 50° to 75° and a speed of 10 to 20 mm/sec movement.

After the above steps, as shown in FIG. 4, the solder layer 7 is heated and cooled in a state where the base material 2 and the lid body 3 are in contact with the solder layer 7 in contact with the second metallization layer 6 b, and the base material 2 and The lid 3 is joined. As the heating method of the solder, heater heating, laser heating, or the like can be used.

Furthermore, the method of forming the metallization layer 6 is not limited to the above. For example, it can be formed using a well-known film forming method such as a vacuum evaporation method.

In addition, the method of applying the solder constituting the solder layer 7 is not limited to the above. For example, it can be coated using a known coating device such as a dispenser.

In addition, in the above embodiment, the case where the base material 2 has a rectangular parallelepiped base material opened on one surface is exemplified, but the shape of the base material 2 may be, for example, a bottomed cylindrical container shape. In addition, as long as the lid 3 can be joined, the base material 2 may have a shape other than the container shape. For example, the substrate 2 may have a plate shape.

In addition, in the above-mentioned embodiment, the case where the lid 3 is in the form of a flat plate is exemplified. However, as long as the lid 3 can be joined to the base 2, the lid 3 can be formed in any shape. For example, the lid 3 may have a container shape or a dome shape.

(Modification) In the above embodiment, the case where the bandwidth of each metal layer constituting the metallization layer 6 is the same has been described as an example, but the bandwidth of each of the plurality of metal layers constituting the metallization layer 6 may be different at least in part or in whole. .

When the fluidity of the solder layer 7 is high, the solder layer 7 excessively wets and diffuses over the end of the metallization layer 6 in the width direction, and excessive stress acts on the cover 3 or the base material 2 to break, or the package 1 The dimensional accuracy or airtightness is damaged. In order to suppress such excessive wetting and spreading of the solder layer 7, for example, as shown in FIGS. 7-9, it is preferable that in the first metallization layer 6a, the bandwidth of the metal layer 6aα bonded to the cover 3 is greater than The metal layer 6aα is provided in the bandwidth of at least one of the metal layers 6aβ and 6aγ closer to the solder layer 7 side. In particular, it is preferable that the bandwidth of the metal layer 6aα is larger than the bandwidth of the metal layer 6aγ bonded to the solder layer 7. In this case, it is further preferable that both ends of the metal layer 6aα in the width direction extend outward from both ends of the metal layer 6aγ in the width direction. According to this configuration, it is possible to exert an effect of easily suppressing excessive wetting and spreading of the solder layer 7, preventing stress damage, and improving dimensional accuracy and airtightness.

Here, the bandwidth of the metal layer in the central portion of the plurality of metal layers constituting the first metallization layer 6a that is not joined to the lid 3 and the solder layer 7 may be configured to be the same as the bandwidth of one metal layer that is adjacently stacked. Specifically, as shown in FIG. 7, the bandwidth of the metal layer 6aα and the bandwidth of the metal layer 6aβ can be set to be the same, and both of them can be set to be larger than the bandwidth of the metal layer 6aγ. In this case, the bandwidth of the metal layer 6aα and the metal layer 6aβ is preferably 1.05 to 2 times the bandwidth of the metal layer 6aγ. Alternatively, as shown in FIG. 8, the bandwidth of the metal layer 6aβ and the bandwidth of the metal layer 6aγ may be the same, and the bandwidth of the metal layer 6aα may be larger than the two. In this case, the bandwidth of the metal layer 6aα is preferably 1.05 to 2 times the bandwidth of the metal layer 6aβ and the bandwidth of the metal layer 6aγ. In this way, by setting the bandwidths of a part of the metal layers to be the same, members such as masks used for film formation of the respective metal layers can be used, and the productivity of the package 1 can be improved.

Furthermore, in the embodiment shown in FIG. 7, it is preferable to form a wetting prevention layer Haβ having a low wettability with respect to the solder constituting the solder layer 7 on the surface of the metal layer 6aβ having a wider bandwidth than the metal layer 6aγ. The wetting prevention layer Haβ is generally composed of a modified layer in which at least a part of the portion of the surface of the metal layer 6aβ that exceeds the metal layer 6aγ is modified. In more detail, the wetting prevention layer Haβ is composed of a metal oxide obtained by oxidizing at least a part of a portion of the surface of the metal layer 6aβ that exceeds the metal layer 6aγ. The wetting prevention layer Haβ is not limited to a uniform layer shape, and an unoxidized portion may remain on the surface of the metal layer 6aβ. By providing the wetting prevention layer Haβ, wetting and diffusion of the solder layer 7 can be further suppressed.

Similarly, it is preferable to form a wetting prevention layer Hbβ having a low wettability with respect to the solder constituting the solder layer 7 on the surface of the metal layer 6bβ. The wetting prevention layer Hbβ is generally composed of a modified layer in which at least a part of the portion of the surface of the metal layer 6bβ that exceeds the metal layer 6bγ is modified. In more detail, the wetting prevention layer Hbβ is composed of a metal oxide obtained by oxidizing at least a part of a portion of the surface of the metal layer 6bβ that exceeds the metal layer 6bγ. The wetting prevention layer Hbβ is not limited to a uniform layer shape, and an unoxidized portion may remain on the surface of the metal layer 6bβ. By providing the wetting prevention layer Hbβ, wetting and diffusion of the solder layer 7 can be further suppressed.

The wetting prevention layer Haβ may be formed by heating the first metallization layer 6a in the atmosphere after the step of forming the first metallization layer 6a on the cover 3 and before the step of forming the solder layer 7, for example. For example, in the case where the metal layer 6aγ is composed of Au and the metal layer 6aβ is composed of Ni, by heating in an atmosphere of 330 to 370°C for 15 to 45 minutes, a modified layer composed of nickel oxide is formed as a wetting prevention layer Haβ. Similarly, the wetting prevention layer Hbβ can be formed by heating the second metallization layer 6b in the atmosphere after the step of forming the second metallization layer 6b on the substrate 2 and before the step of bonding with the solder layer 7, for example.

In addition, the wetting prevention layers Haβ and Hbβ can be formed by depositing a film material on the surface of the metal layers 6aβ and 6bβ that is less likely to wet with respect to the solder layer 7 than the metal layers 6aβ and 6bβ. For example, a metal film such as Fe may be formed on the surfaces of the metal layers 6aβ and 6bβ from the metal layers 6aγ and 6bγ, respectively, thereby constituting the wetting prevention layers Haβ and Hbβ.

Similarly, in the embodiment shown in FIG. 8, it is preferable to form the wetting prevention layers Haα and Hbα on the surfaces of the metal layers 6aα and 6bα that exceed the metal layers 6aβ and 6bβ, respectively. The details of the wetting prevention layers Haα and Hbα are the same as the above wetting prevention layers Haβ and Hbβ.

In addition, as shown in FIG. 9, each of the plurality of metal layers constituting the first metallization layer 6 a may be set to be closer to the lid 3 with a larger bandwidth and closer to the solder layer 7 with a smaller bandwidth. According to this structure, the excessive wetting and spreading of the solder layer 7 can be further appropriately suppressed.

In addition, between the metal layer 6aα bonded to the lid 3 and the metal layer 6aγ bonded to the solder layer 7, in addition to the metal layer 6aβ, more than one metal layer may be provided. The width of the metal layer provided between the metal layer 6aα and the metal layer 6aγ is preferably not less than the bandwidth of the metal layer 6aγ and not more than the bandwidth of the metal layer 6aα.

Similarly, in the second metallization layer 6b, the bandwidth of the metal layer 6bα bonded to the base material 2 (tip portion 2E) is preferably configured to be larger than the metal provided on the side of the solder layer 7 as compared to the metal layer 6bα The bandwidth of at least one of layers 6bβ and 6bγ. In particular, it is preferable that the bandwidth of the metal layer 6bα is larger than the bandwidth of the metal layer 6bγ bonded to the solder layer 7. According to such a configuration, it is possible to exert an effect of easily suppressing excessive wetting and diffusion of the solder layer 7, preventing stress damage, and improving dimensional accuracy and airtightness.

Furthermore, the bandwidth of the metal layer in the central portion of the plurality of metal layers constituting the second metallization layer 6b that is not joined to the substrate 2 and the solder layer 7 can be configured to be the same as the bandwidth of a metal layer stacked adjacent to it. Specifically, as shown in FIG. 7, the bandwidth of the metal layer 6bα and the bandwidth of the metal layer 6bβ can be set to be the same, and both of them can be made larger than the bandwidth of the metal layer 6bγ. In this case, the bandwidth of the metal layer 6bα and the metal layer 6bβ is preferably 1.05 to 2 times the bandwidth of the metal layer 6bγ. Alternatively, as shown in FIG. 8, the bandwidth of the metal layer 6bβ and the bandwidth of the metal layer 6bγ may be the same, and the bandwidth of the metal layer 6bα is larger than both. In this case, the bandwidth of the metal layer 6bα is preferably 1.05 to 2 times the bandwidth of the metal layer 6bβ and the bandwidth of the metal layer 6bγ. In this way, by setting the size of a part of the metal layer to be the same, members such as a mask used for film formation can be flowed, and the productivity of the package 1 can be improved.

Further, as shown in FIG. 9, each of the plurality of metal layers constituting the second metallization layer 6 b may be set to be closer to the base material 2 (tip portion 2E) and having a larger bandwidth, and closer to the solder layer 7 to have a smaller bandwidth. According to such a configuration, the excessive wetting and diffusion of the solder layer 7 can be further appropriately suppressed.

Furthermore, the width of the metal layer provided between the metal layer 6bα bonded to the base material 2 (tip portion 2E) and the metal layer 6bγ bonded to the solder layer 7 is preferably equal to or greater than the bandwidth of the metal layer 6bγ and is a metal layer Below 6bα bandwidth.

Preferably, the bandwidths of the metal layers 6aγ and 6bγ are above the bandwidth Wp of the solder layer 7, respectively. According to such a configuration, the excessive wetting and diffusion of the solder layer 7 can be further appropriately suppressed.

Furthermore, in the embodiment shown in FIG. 9, the portion of the surface of the metal layers 6 a β and 6 b β that exceeds the metal layers 6 a γ and 6 b γ and/or the portion of the surface of the metal layers 6 a α and 6 b α that exceeds the metal layers 6 a β and 6 b β It is possible to form the same wetting prevention layer as the above wetting prevention layers Haβ, Hbβ, Haα, Hbα.

As shown in FIGS. 3, 7-9, each of the plural metal layers constituting the first metallization layer 6a and the second metallization layer 6b preferably has the size and/or material set around the solder layer 7 And symmetrical. According to such a configuration, the stress due to the solder layer 7 can be well dispersed in each of the first metallization layer 6a and the second metallization layer 6b.

In addition, each of the plurality of metal layers constituting the first metallization layer 6a and the second metallization layer 6b may also be set to be asymmetric in size and/or material. For example, the configuration shown in FIG. 7 may be adopted as the first metallization layer 6a, and the configuration shown in FIG. 3 may be adopted as the second metallization layer 6b. That is, only the bandwidth of the metal layer 6aγ may be the same as that of the solder layer 7, and the bandwidth of the other metal layers may be larger than the metal layer 6aγ and the same.

In addition, each of the metal layers 6aα, 6aβ, 6aγ, 6bα, 6bβ, and 6bγ constituting the metallization layer 6 is preferably a case where the metal layer located farther from the solder layer 7 has a position relative to the solder layer constituting 7 The lower the wettability of the solder. For example, the wettability of the metal layer 6aβ with respect to solder is preferably lower than the wettability of the metal layer 6aγ with respect to solder. According to such a configuration, excessive wetting and diffusion of the solder layer 7 can be further suppressed.

The above embodiments have exemplified the case where the cover body 3 is made of glass, but the cover body 3 may be made of any other material such as ceramics (especially single crystal ceramics) or resins (especially heat-resistant resins).

(Example) Hereinafter, the simulation results of the package of the present invention will be described as examples. Furthermore, the following embodiments are merely examples, and the present invention is not limited to the following embodiments.

Model and simulate as described below. Furthermore, ANSYS Mechanical manufactured by ANSYS was used for modeling and simulation. First, a glass containing SiO ₂ 64% by mass, Al ₂ O ₃ 6.4% by mass, B ₂ O ₃ 21.5% by mass, Na ₂ O 6.2% by mass, K ₂ O 1.9% by mass, and a strain point of 427°C was prepared as a cover For the elastic model of the body 3, seven samples (lid body with a bonding material) of Examples 1 to 6 and Comparative Example 1 shown in Table 1 were produced using this. Specifically, first, the metallization layer 6 is modeled as each dimension condition described in Table 1 (the metallization layer is formed on the cover made of glass). Furthermore, the metallization layer 6 is modeled by using the metal layer 6aα as a Cr layer, the metal layer 6aβ as a Ni layer, and the metal layer 6aγ as an Au layer. Next, in a state where the temperature was raised from 30° C. to 300° C., a solder containing Au 80% by mass and Sn 20% by mass was coated on the metallization layer 6 and then cooled to 30° C., thereby forming a solder layer Model 7 and simulate. That is, the maximum tensile stress value of the lid 3 in the model obtained in this way is calculated. Furthermore, the linear thermal expansion coefficient of the cover 3 at 20 to 400°C is 4.2×10 ^-6 /°C, the linear thermal expansion coefficient of the solder layer 7 at 20 to 400°C is 17.5×10 ^-6 /°C, and the Cr layer 20 to 400 The coefficient of linear thermal expansion at 400℃ is 6.2×10 ^-6 /℃, the coefficient of linear thermal expansion at 20～400℃ for Ni layer is 13.3×10 ^-6 /℃, and the coefficient of linear thermal expansion at 20～400℃ for Au layer is 14.2×10 ^-6 /℃.

[表1]

[Table 1]

Compared with the simulation results of Comparative Example 1, the simulation results of Examples 1 to 6 have smaller tensile stresses, and it is presumed that the breakage of the cover can be suppressed.

The package and package manufacturing method of the present invention can be used, for example, as a package for sealing various components and a manufacturing method thereof.

1: encapsulation 2: substrate 2S: Wall 2E: Top part 3: cover 4: junction layer 5: Electronic components 6: metallization layer 6a: First metallization layer 6b: Second metallization layer 7: Solder layer

FIG. 1 is a cross-sectional view showing an outline of the configuration of a package according to an embodiment of the present invention. FIG. 2 is a partially enlarged view of the vicinity of the bonding layer of FIG. 1. FIG. 3 is an enlarged view of a portion near the metallization layer of FIG. 2. 4 is a schematic cross-sectional view showing a package manufacturing method according to an embodiment of the present invention. FIG. 5 is a plan view showing the outline of the base material in the package manufacturing process according to the embodiment of the present invention. 6 is a plan view showing the outline of the lid body in the packaging manufacturing process according to the embodiment of the present invention. 7 is a partial enlarged view of the vicinity of the metallization layer of the first modification. 8 is a partially enlarged view of the vicinity of the metallization layer of the second modification. 9 is a partially enlarged view of the vicinity of the metallization layer of the third modification.

2E: Top part

2S: Wall

3: cover

3C: Compression stress area

3T: Tensile stress area

4: junction layer

6: metallization layer

6a: First metallization layer

6b: Second metallization layer

7: Solder layer

Tg: the thickness of the cover

Tma: the thickness of the first metallization layer

Tp: Thickness of solder layer

Wma: the bandwidth of the junction between the first metallization layer and the cover

Wmb: bandwidth of the second metallization layer

Wp: Bandwidth of solder layer

Ws: the width of the tip

Claims (19)

A package including a base material, a cover body, and a bonding layer for bonding the cover body to the base material, characterized in that: The bonding layer has: The first metallization layer is formed on the main surface of the cover as a frame with a fixed bandwidth; and The solder layer is deposited on the first metallization layer on the side opposite to the cover, The bandwidth of the joint surface of the first metallization layer and the cover is larger than the bandwidth of the solder layer. The package of claim 1, wherein the cover is made of glass, The bandwidth of the joint surface of the first metallization layer and the cover is 1.025 to 2.0 times the bandwidth of the solder layer. The package as claimed in claim 1 or 2, wherein the first metallization layer has a plurality of metal layers with different linear thermal expansion coefficients. As in the package of claim 3, the closer the stacking position of each of the plurality of metal layers is to the cover, the smaller the difference between the linear thermal expansion coefficients of the cover and 20 to 400°C. The package according to claim 3 or 4, wherein the first metallization layer includes a first metal layer bonded to the lid and a second metal layer disposed closer to the solder layer side than the first metal layer as the Multiple metal layers, The bandwidth of the first metal layer is greater than the bandwidth of the second metal layer. The package as claimed in claim 5, wherein a portion of the surface of the first metal layer that exceeds the second metal layer is provided with a wetting prevention layer. The package as claimed in claim 6, wherein the wetting prevention layer is composed of an oxide of the metal constituting the first metal layer. The package according to any one of claims 3 to 7, wherein the first metallization layer is provided with a Cr layer, a Ni layer, and an Au layer in order from the lid body side as the plurality of metal layers. The package according to any one of claims 1 to 8, wherein the bonding layer is further provided on the substrate to form a frame-shaped second metallization layer having a predetermined bandwidth, The solder layer is sandwiched between the first metallization layer and the second metallization layer. The package of claim 9, wherein the bandwidth of the bonding surface of the second metallization layer with the substrate is greater than the bandwidth of the solder layer. The package according to claim 9 or 10, wherein the bandwidth of the bonding surface of the second metallization layer and the substrate is 0.9 to 1.1 times the bandwidth of the bonding surface of the first metallization layer and the cover. The package as claimed in any one of claims 1 to 11, wherein the maximum tensile stress of the main surface of the laminated body of the lid body having the first metallization layer is 1000 MPa or less. The package according to any one of claims 1 to 12, wherein the thickness of the first metallization layer is 1 to 4 μm, and the thickness of the solder layer is 5 to 50 μm. The package according to any one of claims 1 to 13, wherein the lid body contains SiO ₂ 55 to 75% by mass, Al ₂ O ₃ 1 to 10% by mass, B ₂ O ₃ 10 to 30% by mass, CaO 0 A glass composition of ˜5% by mass, BaO 0˜5% by mass, Li ₂ O+Na ₂ O+K ₂ O 1.0˜15% by mass, and a flat shape with a thickness of 30 to 500 μm. The package according to any one of claims 1 to 14, wherein the solder layer is metal solder containing 10 to 80% by mass of Au and 90 to 20% by mass of Sn. The package according to any one of claims 1 to 15, wherein the base material is formed in a container shape having a wall portion constituting an opening, The lid blocks the opening, The bonding layer is provided between the top end of the wall and the cover, The package further includes electronic components housed in the substrate. A packaging manufacturing method including a bonding step of bonding a cover made of glass and a substrate, characterized in that: This joining step has: The step of laminating the first metallization into a frame shape with a fixed bandwidth on the main surface of the cover; and The step of laminating solder on the first metallization layer on the side opposite to the cover body, The first metallization layer and the solder layer are formed in such a manner that the bandwidth of the first metallization layer in the bonding surface with the lid body is greater than the bandwidth of the solder layer. A cover body with a bonding material, comprising a cover body and a bonding layer for bonding the cover body to other members, characterized in that: The bonding layer has: The first metallization layer is formed on the main surface of the cover as a frame with a fixed bandwidth; and The solder layer is deposited on the first metallization layer on the side opposite to the cover, The bandwidth of the joint surface of the first metallization layer and the cover is larger than the bandwidth of the solder layer. A method for manufacturing a cover body with a bonding material, comprising a cover body made of glass and a bonding layer for bonding the cover body to other members, characterized by comprising: The step of laminating the first metallization into a frame shape with a fixed bandwidth on the main surface of the cover; and The step of laminating solder on the first metallization layer on the side opposite to the cover body, The first metallization layer and the solder layer are formed in such a manner that the bandwidth of the first metallization layer in the bonding surface with the lid body is greater than the bandwidth of the solder layer.

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