TW202015246A - Solar cell and method for manufacturing solar cell - Google Patents

Solar cell and method for manufacturing solar cell Download PDF

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TW202015246A
TW202015246A TW108120703A TW108120703A TW202015246A TW 202015246 A TW202015246 A TW 202015246A TW 108120703 A TW108120703 A TW 108120703A TW 108120703 A TW108120703 A TW 108120703A TW 202015246 A TW202015246 A TW 202015246A
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substrate
hole
solder
welding
aluminum electrode
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TWI699899B (en
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新井傑也
菅原美愛子
小林賢一
小宮秀利
松井正五
錦織潤
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日商亞特比目有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
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Abstract

The present invention relates to a solar cell and a method for manufacturing solar cell, with an objective of improving conversion efficiency and increasing the fixing strength of ribbons on the back surface, and eliminating Ag patterns between the ribbon and the substrate to prevent the conversion efficiency from being reduced and preventing conversion efficiency from being decreased due to temperature cycle test, by soldering the ribbon directly to a hole portion of an aluminum electrode on the back surface of the substrate with the ribbon slightly protruding over the aluminum electrode from the edge of the hole. A hole is formed in a part of an aluminum electrode after the aluminum electrode is formed on the entire back surface of the substrate, or an aluminum electrode in which a hole is formed in a portion of the entire back surface of the substrate is formed, and a ribbon is soldered after a solder is directly formed on the substrate inside the hole, or the ribbon is soldered directly to the substrate inside the hole, with the ribbon protruding over the aluminum electrode from the edge of the hole by 0.1mm or more.

Description

太陽能電池及太陽能電池的製造方法 Solar cell and method for manufacturing solar cell

本發明係有關於太陽能電池及太陽能電池的製造方法,該太陽能電池係形成當光照射到基板上時用以產生高電子濃度的區域,並且在區域上形成會透光的絕緣膜,在絕緣膜上形成指狀電極,該指狀電極係用於從區域取出電子的取出口,該太陽能電池係透過指狀電極將電子取出到外部,並且將焊帶(ribbon,也稱為「焊線」)焊接到基板背面之鋁電極中形成的孔之部分中,並且以從孔的邊緣突出於鋁電極的上側0.1mm以上之方式來進行焊接,以增加轉換效率並提高背面之焊帶的固定強度,且在焊帶和基板之間無Ag圖案以防止轉換效率之降低,同時防止因溫度循環測試導致之轉換效率之降低。 The present invention relates to a solar cell and a method of manufacturing a solar cell. The solar cell forms an area for generating a high electron concentration when light is irradiated on a substrate, and forms an insulating film that transmits light on the area. A finger electrode is formed on the finger electrode, which is an outlet for taking out electrons from the area. The solar cell takes out the electrons through the finger electrode to the outside and the ribbon (also called "bonding wire") Soldering to the part of the hole formed in the aluminum electrode on the back of the substrate, and welding is carried out in such a way that it protrudes from the edge of the hole above the upper side of the aluminum electrode by 0.1 mm, so as to increase the conversion efficiency and improve the fixing strength of the back side of the ribbon, And there is no Ag pattern between the solder tape and the substrate to prevent the reduction of conversion efficiency, and at the same time prevent the reduction of conversion efficiency due to temperature cycle testing.

以往,在太陽能電池(solar cell)的設計中,重點係使太陽能電池單元中產生的電子有效地流動到所連接的外部電路。為了實現這一點,特別重要的是要減小從電池連接到外部的部分的電阻成分、防止所產生的電子的損耗、及強力地固定正面及背面之外部端子。 Conventionally, in the design of solar cells, the focus has been on efficiently flowing electrons generated in solar cells to the connected external circuits. In order to achieve this, it is particularly important to reduce the resistance component of the portion connected from the battery to the outside, prevent the loss of generated electrons, and strongly fix the external terminals on the front and back.

例如,如第11圖之習知技術所示,在矽基板31的正面(上 表面)上形成有氮化膜32,且在其上將指狀電極(銀)33之糊膏(含有含鉛玻璃)進行網版印刷(Screen printing)並予以燒結,並如圖所示在氮化膜32中鑿孔以形成用於從高電子濃度區域往外部取出電子的指狀電極33。其次,在與指狀電極33正交之方向上進行網版印刷並燒結而產生匯流條電極(銀)34。用焊料36在匯流條電極(銀)34上焊接焊帶(導線)35而將該焊帶35牢固地固定於矽基板31。 For example, as shown in the conventional technique of FIG. 11, on the front surface of the silicon substrate 31 (upper A nitride film 32 is formed on the surface), and the paste of the finger electrode (silver) 33 (containing lead-containing glass) is screen-printed and sintered on the nitrogen electrode as shown in the figure. A hole is formed in the chemical film 32 to form a finger electrode 33 for taking electrons from the high electron concentration region to the outside. Next, screen printing and sintering are performed in a direction orthogonal to the finger electrodes 33 to produce bus bar electrodes (silver) 34. A solder tape (lead) 35 is soldered to the bus bar electrode (silver) 34 with solder 36 to firmly fix the solder tape 35 to the silicon substrate 31.

另外,在矽基板31的背面(下表面)形成鋁電極37,且將焊帶39焊接並固定於其上。 In addition, an aluminum electrode 37 is formed on the back surface (lower surface) of the silicon substrate 31, and a solder tape 39 is soldered and fixed thereto.

另外,如果鋁電極37形成在整個背面上並且焊帶39的焊接強度為較弱之情況下,先在此鋁電極37的一部分(與正面上的匯流條電極34對應之部分)鑿孔,並於此將銀糊膏進行網版印刷並予以燒結以形成銀的部分371,以焊料38將焊帶39固定以獲得必要的固定強度。 In addition, if the aluminum electrode 37 is formed on the entire back surface and the soldering strength of the solder tape 39 is weak, a part of the aluminum electrode 37 (the portion corresponding to the bus bar electrode 34 on the front surface) is drilled first, and Here, the silver paste is screen-printed and sintered to form the silver portion 371, and the solder tape 39 is fixed with the solder 38 to obtain the necessary fixing strength.

然而,在上述以往的在矽基板31的整個背面上形成鋁電極並在其上焊接焊帶39的話,會出現焊帶39無法以足夠的強度固定到矽基板31的問題。 However, when the aluminum electrode is formed on the entire back surface of the silicon substrate 31 and the solder tape 39 is soldered thereon, there is a problem that the solder tape 39 cannot be fixed to the silicon substrate 31 with sufficient strength.

另外,存在有下述問題:為了防此此種情況發生,如上述第11圖所示,必須先在鋁電極37的一部分鑿孔且於此塗上銀糊膏並燒結,再將焊帶39焊接在其上以獲得足夠的固定強度。 In addition, there is a problem that in order to prevent this from happening, as shown in FIG. 11 above, it is necessary to first drill a hole in a part of the aluminum electrode 37 and apply silver paste on it and sinter it, and then solder the ribbon 39 Welded on it to obtain sufficient fixing strength.

再者,如前述所言,將銀糊膏塗佈在形成於鋁電極37之一部分的孔上並燒結,然後將焊帶39焊接於其上的話,由於使銀圖案固定在基板上並於其上焊接焊帶39而使電子以該焊帶39-銀圖案-基板之路徑流入,因此將產生降低太陽能電池的轉換效率、或甚至因TC(thermal cycling;熱循環)測試而導致轉換效率降低的現象,吾人係期望解決這個問題。 Furthermore, as mentioned above, when a silver paste is applied to the hole formed in a part of the aluminum electrode 37 and sintered, and then the soldering tape 39 is welded thereon, since the silver pattern is fixed on the substrate and applied thereto Solder ribbon 39 is applied to allow electrons to flow in the path of the ribbon 39-silver pattern-substrate, so the conversion efficiency of the solar cell will be reduced, or even the conversion efficiency will be reduced due to TC (thermal cycling) test Phenomenon, we are looking forward to solving this problem.

本發明者們藉由實驗發現,直接焊接到基板背面之鋁電極之孔的一部分上並且以從孔的邊緣稍微突出的方式來焊接,會增加轉換效率並提高背面之焊帶的固定強度,且在焊帶和基板之間無Ag圖案以防止轉換效率之降低,同時防止因溫度循環測試導致之轉換效率之降低之構造與方法。 The inventors found through experiments that soldering directly to a part of the hole of the aluminum electrode on the back of the substrate and soldering in a manner slightly protruding from the edge of the hole will increase the conversion efficiency and improve the fixing strength of the solder tape on the back, and There is no Ag pattern between the solder tape and the substrate to prevent the reduction of conversion efficiency, and at the same time to prevent the reduction of conversion efficiency due to temperature cycle testing.

因此,本發明之太陽能電池,係形成當光照射到基板上時會產生高電子濃度的區域,並且在區域上形成光可透過的絕緣膜,在絕緣膜上形成指狀電極,該指狀電極係用於從區域取出電子的取出口,該太陽能電池係透過指狀電極將該電子取出到外部,並且使電子從該基板的背面流入以形成電路,其中,在基板的整個背面上形成鋁電極之後在電極的一部分形成孔、或者形成在基板的整個背面的一部分已形成有孔之鋁電極,在孔之內部的基板上直接進行焊接之後焊接焊帶、或者將焊帶直接焊接到孔之內部的基板上,並且以從孔的邊緣突出於鋁電極的上側0.1mm以上的方式進行焊接,使電子分別從焊接過的孔之內部的基板之部分及從孔的邊緣突出0.1mm以上的鋁電極之部分流入來增加轉換效率,且在焊帶和基板之 間無Ag圖案以防止轉換效率之降低,並且防止因溫度循環測試導致之轉換效率之降低。 Therefore, in the solar cell of the present invention, a region where high electron concentration is generated when light is irradiated on the substrate is formed, and a light-permeable insulating film is formed on the region, and a finger electrode is formed on the insulating film. The finger electrode It is an outlet for taking out electrons from the area. The solar cell takes out the electrons to the outside through finger electrodes and allows electrons to flow in from the back surface of the substrate to form a circuit, wherein aluminum electrodes are formed on the entire back surface of the substrate After that, a hole is formed in a part of the electrode, or an aluminum electrode with a hole is formed in a part of the entire back surface of the substrate, and the solder tape is welded after welding directly on the substrate inside the hole, or the solder tape is directly welded into the hole On the substrate, and soldered in such a way that the edge of the hole protrudes above the aluminum electrode by 0.1 mm or more, so that the electrons protrude from the portion of the substrate inside the welded hole and the aluminum electrode protruding from the edge of the hole by 0.1 mm or more Part of the inflow to increase the conversion efficiency, and between the ribbon and the substrate There is no Ag pattern to prevent the reduction of conversion efficiency and the reduction of conversion efficiency caused by temperature cycle test.

此時,鋁電極的形成有孔之部分,係與正面的取出線(銲帶、引線)對應的部分。 At this time, the portion of the aluminum electrode where the hole is formed corresponds to the lead wire (solder tape, lead) on the front.

此外,焊接係超音波焊接。 In addition, the welding system is ultrasonic welding.

此外,焊接係將要被焊接之部分的溫度預熱到焊料會熔化的溫度以下且為室溫以上之狀態下進行焊接。 In addition, the soldering system performs soldering in a state where the temperature of the part to be soldered is preheated below the temperature at which the solder will melt and above the room temperature.

另外,焊料係在錫中含有鋅、鋁、矽之一種以上,且不含Pb、Ag、Cu。 In addition, the solder contains at least one of zinc, aluminum, and silicon in tin, and does not contain Pb, Ag, or Cu.

另外,構成為:從孔的邊緣突出於鋁電極之上側0.1mm以上而進行焊接者,係突出於鋁電極的上側達0.1mm以上且為3.0mm以下而進行焊接者。 In addition, the welder protrudes from the edge of the hole by 0.1 mm or more above the aluminum electrode and performs welding, and the welder protrudes from the upper side of the aluminum electrode by 0.1 mm or more and 3.0 mm or less.

如以上所述,本發明實現了直接將焊帶焊接到基板背面之鋁電極之孔的一部分,並且以從孔的邊緣稍微突出至鋁電極之上之方式來進行焊接,以增加轉換效率並提高背面之焊帶的固定強度,且在焊帶和基板之間無Ag圖案以防止轉換效率之降低,同時防止因溫度循環測試導致之轉換效率之降低之構造與方法。 As described above, the present invention realizes welding a part of the hole of the aluminum electrode directly on the back surface of the substrate, and welding is performed in a manner of slightly protruding from the edge of the hole above the aluminum electrode to increase conversion efficiency and improve The structure and method of the fixed strength of the backside solder tape and no Ag pattern between the solder tape and the substrate to prevent the reduction of conversion efficiency and the reduction of conversion efficiency due to temperature cycle testing.

藉此,本發明直接焊接到基板背面之鋁電極之孔的一部分,降低焊帶之部分的電阻值且以足夠的固定強度固定到基板上。 In this way, the present invention directly welds to a part of the hole of the aluminum electrode on the back of the substrate, reduces the resistance value of the part of the solder tape and is fixed to the substrate with sufficient fixing strength.

另外,透過實驗已證實,以從基板之孔的邊緣突出於鋁電極之上0.1mm以上之方式進行焊接時,可從突出而已焊接之鋁電極及與此連 接之鋁電極將電子供應到基板而提高太陽能電池之轉換效率(參考第9圖、第10圖)。 In addition, it has been confirmed through experiments that when welding is performed in such a way that the edge of the hole of the substrate protrudes above the aluminum electrode by 0.1 mm or more, the aluminum electrode that has been protruded and welded can be connected to this The connected aluminum electrode supplies electrons to the substrate to improve the conversion efficiency of the solar cell (refer to Figure 9 and Figure 10).

另外,藉由將焊帶直接焊接到基板背面之鋁電極之孔的部分,在焊帶和基板之間無Ag圖案以防止轉換效率之降低,同時可防止因溫度循環測試導致之轉換效率之降低(參考第6圖)。 In addition, by soldering the soldering tape directly to the hole of the aluminum electrode on the back of the substrate, there is no Ag pattern between the soldering tape and the substrate to prevent the reduction of the conversion efficiency, and at the same time, the conversion efficiency due to the temperature cycle test can be prevented. (Refer to Figure 6).

1‧‧‧基板(矽基板) 1‧‧‧ substrate (silicon substrate)

2‧‧‧基板背面(銀電極) 2‧‧‧Back of substrate (silver electrode)

3‧‧‧基板加熱器 3‧‧‧Substrate heater

11‧‧‧ABS焊料 11‧‧‧ABS solder

12‧‧‧ABS焊接材料供應機構 12‧‧‧ABS welding material supply organization

21‧‧‧烙鐵 21‧‧‧soldering iron

22‧‧‧烙鐵頭 22‧‧‧Iron tip

23‧‧‧烙鐵加熱電源 23‧‧‧soldering iron heating power supply

24‧‧‧烙鐵超音波功率產生機構 24‧‧‧Sonic iron power generating mechanism

25‧‧‧移動機構 25‧‧‧Moving mechanism

31‧‧‧矽基板 31‧‧‧Si substrate

32‧‧‧氮化膜 32‧‧‧Nitride film

33‧‧‧指狀電極 33‧‧‧ finger electrode

34‧‧‧匯流條電極 34‧‧‧Bus electrode

35‧‧‧焊帶 35‧‧‧Solder tape

36‧‧‧焊料 36‧‧‧Solder

37‧‧‧鋁電極 37‧‧‧Aluminum electrode

38‧‧‧焊料 38‧‧‧ solder

39‧‧‧焊帶 39‧‧‧Solder tape

371‧‧‧銀的部分 371‧‧‧ Silver part

第1圖為本發明之第1實施例構造圖。 Fig. 1 is a structural diagram of a first embodiment of the invention.

第2圖為本發明之動作說明流程圖(整體)。 Fig. 2 is a flowchart (overall) of the operation of the present invention.

第3圖為本發明之詳細動作說明流程圖。 Fig. 3 is a flowchart for explaining the detailed operation of the present invention.

第4圖為本發明與以往的IV曲線例。 FIG. 4 is an example of an IV curve between the present invention and the conventional one.

第5圖為本發明之TC測試例。 Figure 5 is a TC test example of the present invention.

第6圖為本發明之TC測試結果例。 Figure 6 is an example of the TC test results of the present invention.

第7圖為本發明之動作說明流程圖(整體之2)。 Fig. 7 is a flowchart for explaining the operation of the present invention (2 of the whole).

第8圖為本發明之詳細動作說明流程圖(二)。 Fig. 8 is a flowchart (2) illustrating the detailed operation of the present invention.

第9圖為本發明之樣本照片例。 Figure 9 is an example of a sample photograph of the present invention.

第10圖為本發明之測量例。 Fig. 10 is a measurement example of the present invention.

第11圖為習知技術之說明圖。 Fig. 11 is an explanatory diagram of conventional technology.

[實施例1] [Example 1]

第1圖為本發明之第1實施例構造圖。 Fig. 1 is a structural diagram of a first embodiment of the invention.

第1圖之(a)為表示整體之側視圖;第1圖之(b)為表示第1圖之(a)部分之主要部分放大圖。 Figure 1 (a) is a side view showing the whole; Figure 1 (b) is an enlarged view of the main part showing part (a) of Figure 1;

第1圖之基板(矽基板),係欲形成太陽能電池之矽基板(單結晶,多結晶)。 The substrate (silicon substrate) in Fig. 1 is a silicon substrate (single crystal, polycrystalline) for forming a solar cell.

基板背面(Al)2係基板1的背面,係在整個背面上形成鋁電極後於一部分鑿孔,或者在基板1的整個背面上形成具有孔的鋁電極者。 The back surface of the substrate (Al) 2 is the back surface of the substrate 1 in which an aluminum electrode is formed on the entire back surface and a part of the substrate 1 is drilled, or an aluminum electrode with holes is formed on the entire back surface of the substrate 1.

基板加熱器3係用於預熱基板1的加熱器,且在焊接到基板1時,預熱到焊料會熔化的溫度以下且為室溫以上之溫度,並且為具有自動溫度調整機構者。 The substrate heater 3 is a heater for preheating the substrate 1, and when soldered to the substrate 1, it is preheated to a temperature below the temperature at which the solder will melt and above the room temperature, and it has an automatic temperature adjustment mechanism.

ABS焊料11係一長條狀焊接材料,其具有如條狀或帶狀之便於供應焊料之形狀,以便焊接到基板背面(鋁電極)2。焊接材料為於錫(Sn)中含有鋅(Zn)、鋁(Al)、矽(Si)之一種以上,且不含鉛(Pb)、銀(Ag)、銅(Cu)之材料的合金(稱之為ABS焊料11)。取決於此等焊接材料的ABS焊料11的熔點通常在約150℃至350℃的範圍內,因為係由材料的調配比來決定,所以藉由實驗計算出熔化溫度,並決定熔化溫度的最佳預熱溫度(ABS焊料11不會融化之室溫以上之溫度),再者,藉由實驗決定當加熱烙鐵頭22並施加超音波時會熔化並焊接在基板背面2中的孔內部的基板1上的適當之溫度。藉此,可進行如後述之第9圖之(a)、(b)、(c)的照片所示之超音波焊接,可提升焊接焊帶時之拉伸強度,並且可以進一步提高太陽能電池的轉換效率。又,ABS焊料11的焊接材料的組成係適量地添加了20至95wt%的錫(Sn)、3至60wt%的鋅(Zn)、鋁(Al)、矽(Si)等添加材料。 關於此等混合比,係藉由實驗並根據熔化溫度、基板或焊帶等之ABS焊接對象來確定最佳之混合比。 The ABS solder 11 is a strip-shaped solder material, which has a shape such as a strip shape or a strip shape that facilitates the supply of solder for soldering to the back surface (aluminum electrode) 2 of the substrate. The soldering material is an alloy containing at least one of zinc (Zn), aluminum (Al), and silicon (Si) in tin (Sn), and does not contain lead (Pb), silver (Ag), or copper (Cu) ( Call it ABS solder 11). The melting point of the ABS solder 11 depending on these soldering materials is usually in the range of about 150°C to 350°C. Because it is determined by the blending ratio of the materials, the melting temperature is calculated by experiment and the optimal melting temperature is determined Preheating temperature (temperature above room temperature where ABS solder 11 will not melt), furthermore, it is experimentally determined that when the soldering iron tip 22 is heated and ultrasonic waves are applied, it will melt and solder the substrate 1 inside the hole in the substrate back 2 On the right temperature. As a result, ultrasonic welding as shown in the photographs (a), (b), and (c) of FIG. 9 described later can be performed, the tensile strength when welding the welding tape can be improved, and the solar cell can be further improved Conversion efficiency. In addition, the composition of the solder material of the ABS solder 11 is appropriately added with 20 to 95 wt% of tin (Sn), 3 to 60 wt% of zinc (Zn), aluminum (Al), silicon (Si) and other additives. Regarding these mixing ratios, the best mixing ratio is determined by experiment and according to the melting temperature, the substrate or the ABS welding object such as the soldering tape.

ABS焊接材料供應機構12係用於根據烙鐵頭22相對於基板1的移動速度而以既定速度(既定量的焊料,將在後面描述)將ABS焊料11供應到該烙鐵頭22的機構。 The ABS solder material supply mechanism 12 is a mechanism for supplying the ABS solder 11 to the soldering iron head 22 at a predetermined speed (a certain amount of solder, which will be described later) according to the moving speed of the soldering iron head 22 relative to the substrate 1.

焊帶13係焊接到基板背面(鋁電極)2之有鑿孔之基板1的部分或已做過預焊接之部分,而從基板1往外部取出電流,或使電子流入等。又,如第1圖之(a)所示,當供應ABS焊料11時,預焊(超音波焊接)到基板背面2的孔之部分之基板1,如第1(b)圖所示,當與ABS焊料11疊合來供應焊帶13時,將焊帶13焊接(超音波焊接)在基板背面2的孔之部分之基板1。在已做過預焊接的情況下,係在後段的步驟中將焊帶以一般的焊接(無超音波焊接)焊接到預焊接之部分。另外,也可以使用帶有焊料之焊帶來取代使ABS焊料與焊帶13重疊而供應之情形,其中該帶有焊料之焊帶係將ABS焊料11焊接到焊帶13上而形成者。於此種情況下,帶有焊料的焊帶需要使焊料以夠厚之厚度預先焊接到焊帶13,使得約0.1mm以上的焊料從孔的邊緣突出到基板背面2(鋁電極)上。 The soldering tape 13 is welded to the part of the substrate 1 with holes drilled on the back side (aluminum electrode) 2 of the substrate or the part that has been pre-welded, and the current is taken out from the substrate 1 to the outside, or electrons are allowed to flow in. Also, as shown in FIG. 1(a), when the ABS solder 11 is supplied, the substrate 1 that is pre-soldered (ultrasonically welded) to the hole on the back surface 2 of the substrate is shown in FIG. 1(b) when When overlapping the ABS solder 11 to supply the solder tape 13, the solder tape 13 is soldered (ultrasonically welded) to the substrate 1 at the part of the hole on the back surface 2 of the substrate. In the case where pre-welding has been done, the welding tape is welded to the pre-welded part by general welding (non-sonic welding) in the subsequent steps. In addition, a solder ribbon with solder may be used instead of the case where the ABS solder is overlapped with the solder ribbon 13 and the solder ribbon is formed by soldering the ABS solder 11 to the solder ribbon 13. In this case, the solder tape with solder needs to be soldered to the solder tape 13 with a thick enough thickness so that about 0.1 mm or more solder protrudes from the edge of the hole onto the back surface 2 (aluminum electrode) of the substrate.

烙鐵21係將烙鐵頭22加熱到既定溫度並且供應超音波者。 The soldering iron 21 heats the soldering iron head 22 to a predetermined temperature and supplies ultrasonic waves.

烙鐵頭22係安裝到烙鐵21之前端,將超音波施加到要焊接的部件(基板背面2的孔之部分等),並且供應已熔化的ABS焊料11並進行焊接者。 The soldering iron tip 22 is attached to the front end of the soldering iron 21, applies ultrasonic waves to the parts to be soldered (portions of holes in the back surface 2 of the substrate, etc.), and supplies the melted ABS solder 11 and performs soldering.

烙鐵加熱電源23係供應電源使得烙鐵頭22達到既定溫度,並且檢測烙鐵頭22之部分的溫度且具有自動溫度調整機構。 The soldering iron heating power supply 23 supplies power so that the soldering iron tip 22 reaches a predetermined temperature, and detects the temperature of a part of the soldering iron tip 22 and has an automatic temperature adjustment mechanism.

烙鐵超音波功率產生機構24係將超音波從烙鐵頭22供應給要焊接的部分(基板背面2的孔之部分等)者。超音波功率(電源功率)可約為1至10W,若功率太弱則會發生超音波焊接不良,若功率太強則膜(鋁電極等)會被超音波破壞,反而可能會發生焊接不良,因此,透過實驗來確定最佳功率。通常係使用1至數瓦來進行。 The soldering iron ultrasonic power generating mechanism 24 supplies ultrasonic waves from the soldering iron head 22 to the part to be soldered (the part of the hole of the back surface 2 of the substrate, etc.). Ultrasonic power (power supply power) can be about 1 to 10W. If the power is too weak, poor ultrasonic welding will occur. If the power is too strong, the membrane (aluminum electrode, etc.) will be destroyed by ultrasonic waves, but poor welding may occur. Therefore, through experiments to determine the best power. It is usually carried out using 1 to several watts.

移動機構25係使烙鐵21以既定速度自動地移動的機構,於此種情況下,係以既定速度往右方移動的機構。既定速度係與用以自動供應ABS焊料11之ABS焊接材料供應機構12連動而調整(透過實驗調整)成,以使ABS焊料11從基板背面2的孔的邊緣突出於基板背面2之鋁電極上約0.1mm以上且通常在3mm以內之方式對ABS焊料11進行焊接。 The moving mechanism 25 is a mechanism that automatically moves the soldering iron 21 at a predetermined speed. In this case, it is a mechanism that moves to the right at a predetermined speed. The predetermined speed is adjusted in conjunction with the ABS solder material supply mechanism 12 for automatically supplying the ABS solder 11 (adjusted through experiments) so that the ABS solder 11 protrudes from the edge of the hole on the back surface 2 of the substrate to the aluminum electrode on the back surface 2 of the substrate The ABS solder 11 is soldered in a manner of about 0.1 mm or more and usually within 3 mm.

其次,說明第1圖之構造的動作。 Next, the operation of the structure of FIG. 1 will be described.

(1):將基板(約150mm的矩形基板)1放置在具有預備加熱器3的工作台(未圖示)上,將溫度調整到略低於ABS焊料11的熔化溫度的溫度(溫度係通過實驗確定)。 (1): Place the substrate (a rectangular substrate of approximately 150 mm) 1 on a table (not shown) with a pre-heater 3, and adjust the temperature to a temperature slightly lower than the melting temperature of the ABS solder 11 (the temperature is passed (Experimentally determined).

(2):由烙鐵加熱電源23供給電源而將烙鐵頭22加熱到既定溫度,並且由烙鐵超音波功率產生機構24產生超音波並將超音波供應給烙鐵頭22(加熱溫度、超音波功率係根據ABS焊料11的材料而有所不同,所以每種材料都透過實驗來決定)。 (2): The power supply from the soldering iron heating power supply 23 heats the soldering iron head 22 to a predetermined temperature, and the ultrasonic power generating mechanism 24 of the soldering iron generates ultrasonic waves and supplies the ultrasonic waves to the soldering iron head 22 (heating temperature, ultrasonic power system) It differs according to the material of the ABS solder 11, so each material is determined through experiment).

(3):如第1圖(a)所示,一面利用烙鐵頭22熔化ABS焊料11,一面將超音波供應(於輕壓之狀態下)給基板背面(鋁電極)2的孔之部分的基板1,並且藉由移動機構25使烙鐵頭22往圖中之右方移動。同時,由ABS焊接材料供應機構12以既定速度供應ABS焊料11,並使其移動以便使已 融化之ABS焊料11以從基板背面2的孔之邊緣突出於基板背面(鋁電極)2上約0.1mm以上之方式進行焊接(透過實驗決定烙鐵頭22的移動速度、ABS焊料11的供應量以滿足此等關係。此時,也要進一步一起調整加熱溫度、超音波功率)。 (3): As shown in FIG. 1 (a), while the ABS solder 11 is melted with a soldering iron tip 22, ultrasonic waves are supplied (under light pressure) to the part of the hole on the back of the substrate (aluminum electrode) 2 The substrate 1 moves the soldering iron head 22 to the right in the figure by the moving mechanism 25. At the same time, the ABS solder material supply mechanism 12 supplies the ABS solder 11 at a predetermined speed and moves it so that the The melted ABS solder 11 is soldered by protruding from the edge of the hole in the back surface 2 of the substrate to the back surface (aluminum electrode) 2 of about 0.1 mm or more (the moving speed of the soldering iron tip 22 and the supply amount of the ABS solder 11 are determined by experiments Satisfy these relationships. At this time, the heating temperature and ultrasonic power must also be adjusted together).

(4):如以上所述,如第1圖(a)所示,當僅供應ABS焊料11時,ABS焊料11焊接到基板背面(鋁電極)2的孔之部分的基板1上,並且以從孔的邊緣突出約0.1mm以上至3mm左右之方式焊接到基板背面(鋁電極)2上(參考第9圖)。 (4): As described above, as shown in FIG. 1 (a), when only ABS solder 11 is supplied, the ABS solder 11 is soldered to the substrate 1 at the part of the hole on the back surface (aluminum electrode) 2 of the substrate, and Solder to the back of the substrate (aluminum electrode) 2 by protruding from the edge of the hole by approximately 0.1 mm to approximately 3 mm (refer to Figure 9).

(5):在(4)之有做預焊之情況時,係在後段步驟中將焊帶焊接(採用一般焊接的無超音波焊接)到預焊接的部份,並將其作為連接到外部的引線。 (5): In the case of (4) when pre-welding is done, the welding ribbon is welded to the pre-welded part in the later step (using general welding without ultrasonic welding), and it is connected to the outside Of the lead.

(6):此外,取代(4)和(5),如第1圖(b)所示,當ABS焊料11與焊帶13一起供應之情況或者當供應帶有焊料的焊帶之情況時,將ABS焊料11焊接到基板背面(鋁電極)2有鑿孔之部分的基板1上並以從孔的邊緣突出於基板背面(鋁電極)2上約0.1mm以上至3mm左右之方式將ABS焊料11進行焊接。 (6): In addition, instead of (4) and (5), as shown in FIG. 1 (b), when the ABS solder 11 is supplied with the solder tape 13 or when the solder tape with solder is supplied, Solder the ABS solder 11 to the back surface of the substrate (aluminum electrode) 2 with a hole in the substrate 1 and apply ABS solder so that it protrudes from the edge of the hole on the back surface of the substrate (aluminum electrode) 2 by about 0.1 mm to about 3 mm 11 Perform welding.

如以上所述,藉由將ABS焊料11直接預焊接到基板背面(鋁電極)2的孔之部分的基板1或以ABS焊料11焊接焊帶13,如後所述,可以提高太陽能電池的效率,並且以ABS焊料11透過基板背面2的孔直接焊接到基板1,可以將焊帶牢固地固定到該基板1。 As described above, by directly pre-soldering the ABS solder 11 to the part of the hole of the back surface (aluminum electrode) 2 of the substrate or soldering the solder tape 13 with the ABS solder 11, as will be described later, the efficiency of the solar cell can be improved And the ABS solder 11 is directly soldered to the substrate 1 through the hole on the back surface 2 of the substrate, and the soldering tape can be firmly fixed to the substrate 1.

又,在實際實施的一個例子中,將基板加熱溫度(預熱)標準化為180℃,至少上限溫度為200℃以下(ABS焊料不熔化的溫度以下)。若超過此溫度之基板將被破壞,於此種情況下,烙鐵溫度為400℃。最多約 500℃。此係以烙鐵頭的移動速度、焊接材料供應速度來調整。速度越快就越提高溫度。關於超音波輸出,背面為6瓦以下而正面為3瓦以下。上述之條件適用於熔點約為217℃且主要材料為錫與鋅合金的焊接材料。取決於焊接材料、基板之類型、烙鐵頭的移動速度、焊料供應量等,必須對預熱溫度、烙鐵頭(烙鐵)溫度、烙鐵頭移動速度、焊料供應速度等進行實驗,以調整到最合適的條件,以便可以進行良好的超音波焊接。 Moreover, in an example of actual implementation, the substrate heating temperature (preheating) is standardized to 180°C, and at least the upper limit temperature is 200°C or lower (below the temperature at which the ABS solder does not melt). If the substrate exceeds this temperature, it will be destroyed. In this case, the temperature of the soldering iron is 400°C. Up to about 500℃. This is adjusted by the moving speed of the soldering iron head and the welding material supply speed. The faster the speed, the higher the temperature. Regarding ultrasonic output, the back is 6 watts or less and the front is 3 watts or less. The above conditions apply to welding materials with a melting point of about 217°C and the main material being tin and zinc alloys. Depends on the soldering material, the type of substrate, the moving speed of the soldering iron head, the amount of solder supply, etc., must be preheating temperature, soldering iron (soldering iron) temperature, soldering iron head moving speed, solder supply speed, etc., to adjust to the most suitable Conditions so that good ultrasonic welding can be performed.

其次,依據第2圖的流程圖的順序詳細說明第1圖的構造的動作。 Next, the operation of the structure of FIG. 1 will be described in detail in accordance with the sequence of the flowchart of FIG. 2.

第2圖為本發明之動作說明流程圖(整體)。 Fig. 2 is a flowchart (overall) of the operation of the present invention.

於第2圖中,S21步驟準備Si基板。 In the second figure, the Si substrate is prepared in step S21.

S22步驟係進行表面處理。此係為了在S21步驟中所準備的矽基板(例如,N型)上形成氮化膜,此外,形成有指狀電極、匯流條電極等的圖案。此類似於例如以往的第11圖,於矽基板31之正面側形成氮化膜32,形成有指狀電極33、匯流條電極34等的圖案。 Step S22 is a surface treatment. This is to form a nitride film on the silicon substrate (for example, N-type) prepared in step S21, and in addition, a pattern of finger electrodes, bus bar electrodes, and the like is formed. This is similar to, for example, the conventional FIG. 11 in which a nitride film 32 is formed on the front side of the silicon substrate 31, and patterns of finger electrodes 33, bus bar electrodes 34, and the like are formed.

S23步驟係進行背面處理。此步驟在矽基板的背面形成有鋁圖案,例如以網版印刷在矽基板之整個背面上用鋁糊膏(Aluminum paste)形成已有鑿孔的鋁電極。隨後,本發明進入到S25步驟。 Step S23 is to perform the back side processing. In this step, an aluminum pattern is formed on the back surface of the silicon substrate. For example, an aluminum paste with aluminum paste is formed on the entire back surface of the silicon substrate by screen printing. Subsequently, the invention proceeds to step S25.

S25步驟係進行燒結。此係為了總括地燒結由S22步驟的表面處理、S23步驟的背面處理所形成的圖案。 Step S25 is sintering. This is to sinter the pattern formed by the surface treatment in step S22 and the back surface treatment in step S23 in total.

如上所述,在本發明中,在S21至S23及S25步驟中,可以在基板的正面上形成指狀電極、匯流條電極、而於背面形成已有鑿孔的鋁電極。 As described above, in the present invention, in steps S21 to S23 and S25, finger electrodes and bus bar electrodes can be formed on the front surface of the substrate, and aluminum electrodes with holes drilled on the back surface can be formed.

S26步驟係用ABS焊料焊接焊帶。此步驟係用ABS焊料將焊帶13直接焊接到Si基板1之鋁電極之有鑿孔之部分的該基板1上,同時以從孔的邊緣突出於鋁電極上約0.1mm以上之方式進行焊接。 Step S26 is to solder the ribbon with ABS solder. In this step, the soldering tape 13 is directly soldered to the substrate 1 of the aluminum electrode of the Si substrate 1 with ABS solder, and soldering is performed by protruding from the edge of the hole to the aluminum electrode by about 0.1 mm or more .

S27步驟係進行測量(2)。此步驟係在S26步驟的對焊帶13進行ABS焊接之後測量太陽能電池的電氣特性(稍後使用第3圖說明)。 Step S27 is to measure (2). This step is to measure the electrical characteristics of the solar cell after ABS welding the welding tape 13 in step S26 (to be explained later using FIG. 3).

另一方面,以往,在S21至S23步驟之後,接著在S24步驟中將銀糊膏進一步塗佈到基板上,在S25步驟中燒結,在S27步驟中利用含鉛焊料(錫及鉛)將焊帶焊接到銀上面,透過銀圖案將該焊帶牢固地固定到基板上,並且在S28步驟中進行測量(2),測量太陽能電池的電氣特性。 On the other hand, in the past, after steps S21 to S23, the silver paste was further applied to the substrate in step S24, sintered in step S25, and soldered with lead-containing solder (tin and lead) in step S27. The tape is soldered to the silver, the solder tape is firmly fixed to the substrate through the silver pattern, and measurement (2) is performed in step S28 to measure the electrical characteristics of the solar cell.

第3圖為本發明之詳細動作說明流程圖。此係第2圖的S28步驟的測量(2)的詳細流程圖。 Fig. 3 is a flowchart for explaining the detailed operation of the present invention. This is a detailed flowchart of the measurement (2) in step S28 of FIG. 2.

在第3圖中,S31在TC(熱循環)測試之前進行測量(2-1)。此步驟係在第2圖的S26步驟(以本發明ABS焊料焊接焊帶)、S27步驟(將焊帶以含鉛焊料焊接到以往之Ag上,無焊帶的含鉛焊料之焊接)的基板的TC測試之前進行測量(2-1)。測量項目係從第4圖至第6圖及第10圖所示的Isc、Voc、FF、EFF等。 In Figure 3, S31 is measured before the TC (thermal cycle) test (2-1). This step is the substrate in steps S26 (welding the ribbon with the ABS solder of the present invention) and S27 (soldering the ribbon with lead-containing solder to the conventional Ag, soldering with lead-free solder without ribbon) in Figure 2 Measure before the TC test (2-1). The measurement items are Isc, Voc, FF, EFF, etc. shown in Figure 4 to Figure 6 and Figure 10.

S32步驟係進行TC500(500小時/24小時循環)。此步驟如後述的第5圖所示,將測試對象之基板1(第2圖中的S26、S27步驟)放入在高溫/低溫測試裝置內,如圖所示,在24小時循環中改變溫度/濕度,連續測試500小時。在本測試中,如第5圖的曲線圖所示,在第5圖所示的範圍內進行測試。 Step S32 is TC500 (500 hour/24 hour cycle). In this step, as shown in Figure 5 described later, the substrate 1 of the test object (steps S26 and S27 in Figure 2) is placed in a high-temperature/low-temperature test device, and as shown in the figure, the temperature is changed in a 24-hour cycle / Humidity, continuous testing for 500 hours. In this test, as shown in the graph of Figure 5, the test is performed within the range shown in Figure 5.

‧溫度:-25.4℃至86.6℃ ‧Temperature: -25.4℃ to 86.6℃

‧濕度:4.8至100% ‧Humidity: 4.8 to 100%

S33步驟係進行測量(2-2)。此步驟係在S32步驟中測試TC500後,對基板1測量太陽能電池的電氣特性(參考第6圖)。 Step S33 is a measurement (2-2). This step is to measure the electrical characteristics of the solar cell on the substrate 1 after testing the TC500 in step S32 (refer to FIG. 6).

S34步驟係進行TC1000。此步驟係進行1000小時/24小時循環測試,其比S32步驟的TC500時間更長(參考第5圖)。 Step S34 is to proceed to TC1000. This step is a 1000-hour/24-hour cycle test, which is longer than the TC500 of step S32 (refer to Figure 5).

S35步驟係進行測量(2-3)。此步驟係在S34步驟中測試TC1000後,對基板1測量太陽能電池的電特性(參考第6圖)。 Step S35 is to measure (2-3). This step is to measure the electrical characteristics of the solar cell on the substrate 1 after testing the TC1000 in step S34 (refer to FIG. 6).

如上所述,對於依據第2圖的流程圖完成的基板1(本發明,具有/不具有焊帶之以往者),係根據第3圖之流程圖進行熱循環測試前的測量(2-1),於TC500的測試後的測量(2-2),甚至TC1000的測試後的測量(2-3)。結果示意性地如第4圖和第6圖所示。 As described above, for the substrate 1 completed in accordance with the flowchart of FIG. 2 (the present invention, the conventional with/without solder ribbon), the measurement before the thermal cycle test (2-1 ), after the measurement of TC500 (2-2), or even after the measurement of TC1000 (2-3). The results are shown schematically in Figures 4 and 6.

第4圖為本發明與以往的IV曲線例子。橫軸表示太陽能電池的輸出電壓V,縱軸表示太陽能電池的輸出電流I。於此,測量根據第2圖的流程圖完成之本發明及以往之太陽能電池的IV特性,將獲得如圖所示的曲線。 FIG. 4 is an example of an IV curve between the present invention and the conventional one. The horizontal axis represents the output voltage V of the solar cell, and the vertical axis represents the output current I of the solar cell. Here, by measuring the IV characteristics of the present invention and the conventional solar cell completed according to the flowchart of FIG. 2, a curve as shown in the figure will be obtained.

於此,ABS係根據本發明的太陽能電池,其中焊帶係以ABS方式焊接,並且在上述第2圖的S21至S23,S25和S26步驟中完成。 Here, the ABS is a solar cell according to the present invention, in which the welding ribbon is welded by the ABS method, and is completed in steps S21 to S23, S25, and S26 of the above-mentioned FIG. 2.

Ref係以往的太陽能電池,其中焊帶以含鉛焊料焊接在Ag上,並且在上述第2圖的S21至S25和S27步驟中完成。 The Ref is a conventional solar cell in which the solder ribbon is soldered to Ag with lead-containing solder, and is completed in steps S21 to S25 and S27 in the above-mentioned FIG. 2.

當比較本發明的ABS和以往的Ref之IV曲線時,從第4圖中可以清楚地判斷出本發明的ABS略大於將焊帶以含鉛焊料焊接到Ag上的Ref。 When comparing the IV curve of the ABS of the present invention and the conventional Ref, it can be clearly judged from FIG. 4 that the ABS of the present invention is slightly larger than the Ref that soldered the ribbon to Ag with leaded solder.

第5圖為本發明之TC測試例。於此,橫軸表示時間(h),左端為0小時,右端為1000小時。縱軸的左側為表示溫度(℃),縱軸的右側為表示濕度(%rh)。 Figure 5 is a TC test example of the present invention. Here, the horizontal axis represents time (h), the left end is 0 hours, and the right end is 1000 hours. The left side of the vertical axis represents temperature (°C), and the right side of the vertical axis represents humidity (%rh).

在第5圖中,TC測試環境,如右下方所示。 In Figure 5, the TC test environment is shown at the bottom right.

Figure 108120703-A0202-12-0013-1
Figure 108120703-A0202-12-0013-1

如上所述,左端的0時間為開始測試的時間點,記錄溫度變化、濕度變化,如圖中之曲線所示。於此,依據上述之第3圖的流程圖對上述之TC500和TC1000進行測試。測量該被測試的基板(太陽能電池)的電氣特性,依曲線圖即可表示獲得如第6圖所示的結果。 As mentioned above, the time 0 at the left end is the time point when the test is started, and the temperature change and humidity change are recorded, as shown by the curve in the figure. Here, the above-mentioned TC500 and TC1000 are tested according to the flow chart of the third figure above. By measuring the electrical characteristics of the substrate (solar cell) under test, the results shown in Figure 6 can be obtained according to the graph.

第6圖為本發明之TC測試結果例。於此,示意性地顯示出在上述第5圖的環境下進行測試的基板(本發明的ABS焊料-無Ag,以往之含鉛焊料、有焊帶,以往之含鉛焊料、無焊帶)的三種類型的電氣特性。TC0為測試前的測量結果(2-1)(參考第3圖中的S31步驟)。TC500為進行TC500測試後的測量結果(2-2)(參考第3圖3的S33步驟)。TC1000為進行TC1000的測試後的測量結果(2-3)(參考第3圖中的S35步驟)。 Figure 6 is an example of the TC test results of the present invention. Here, the substrates tested in the environment of the above-mentioned FIG. 5 are shown schematically (ABS solder of the present invention-Ag-free, conventional lead-containing solder, with solder ribbon, conventional lead-containing solder, solder-free ribbon) The three types of electrical characteristics. TC0 is the measurement result (2-1) before the test (refer to step S31 in Figure 3). TC500 is the measurement result (2-2) after the TC500 test (refer to step S33 in FIG. 3 of FIG. 3). TC1000 is the measurement result (2-3) after the test of TC1000 (refer to step S35 in Figure 3).

左邊的Ref_A沒有焊帶(以往之含鉛焊料,有Ag),如圖所示,係將銀糊膏塗佈在形成於基板1的背面的鋁電極(基板背面)2的孔的部分上並燒結來形成銀圖案,且不要焊接焊帶的構成。 The Ref_A on the left has no solder tape (conventional lead-containing solder with Ag), as shown in the figure, a silver paste is applied to the hole portion of the aluminum electrode (back surface of the substrate) 2 formed on the back surface of the substrate 1 and Sinter to form a silver pattern, and do not solder the ribbon.

中央Ref_B係有焊帶(以往之含鉛焊料,有Ag),如圖所示, 係將銀糊膏塗佈在形成於基板1的背面的鋁電極(基板背面)2的孔的部分上並燒結來形成銀圖案,且要焊接焊帶的構成。 The central Ref_B series has a solder ribbon (the former leaded solder, with Ag), as shown in the figure, The silver paste is applied to the hole portion of the aluminum electrode (back surface of the substrate) 2 formed on the back surface of the substrate 1 and sintered to form a silver pattern, and a solder ribbon is welded.

右邊的ABS有焊帶(本發明之ABS焊料,無Ag),如圖所示,係以ABS焊料將焊帶直接焊接到形成於基板1的背面的鋁電極(基板背面)2的孔的部分上,且不塗佈並燒結以往之銀糊膏而形成銀圖案的構成。 The ABS on the right has a solder tape (ABS solder of the present invention, without Ag), as shown in the figure, the solder tape is directly soldered to the hole of the aluminum electrode (back surface of the substrate) 2 formed on the back surface of the substrate 1 with ABS solder No silver paste is applied and sintered to form a silver pattern.

‧關於TC1000:比較EFF(轉換效率)的三方(Ref_A、Ref_B、ABS),就會得到如圖所示之以下的測量結果 ‧About TC1000: Compare the three parties of EFF (conversion efficiency) (Ref_A, Ref_B, ABS), you will get the following measurement results as shown

‧Ref_A為-0.94%, ‧Ref_A is -0.94%,

‧Ref_B為-1.17%, ‧Ref_B is -1.17%,

‧ABS為-0.58%。 ‧ABS is -0.58%.

也就是說,關於EFF(轉換效率),本發明的ABS即使在TC1000之測試之後,轉換效率的降低也係最小,且透過實驗已證實,與以往的基板上塗佈銀糊膏並燒結以形成銀圖案,並且將焊帶焊接到該銀圖案上之情況相比較,轉化效率的降低約少了兩倍左右。 That is to say, regarding EFF (conversion efficiency), the ABS of the present invention has the smallest reduction in conversion efficiency even after the TC1000 test, and it has been confirmed through experiments that it is coated with silver paste on the conventional substrate and sintered to form The silver pattern, and compared with the case where the soldering tape is welded to the silver pattern, the reduction in conversion efficiency is about twice less.

其次,在第1圖的架構下,並配合第7圖至第10圖依序詳細說明將ABS焊料11直接焊接到形成在基板背面(鋁電極)2上的孔的內部的基板1,並且以從該孔的邊緣突出於基板背面(鋁電極)2上0.1mm以上之方式來進行焊接,以提高轉換效率時之步驟等。 Secondly, in the framework of FIG. 1 and in conjunction with FIGS. 7 to 10, the substrate 1 directly soldered to the inside of the hole formed in the back surface (aluminum electrode) 2 of the substrate will be described in detail in sequence with FIGS. Steps for soldering to protrude from the edge of the hole over the back surface (aluminum electrode) 2 of the substrate by 0.1 mm or more to improve conversion efficiency.

將根據第7圖的流程圖的順序詳細說明第1圖的構造之動作。 The operation of the structure of FIG. 1 will be described in detail according to the sequence of the flowchart of FIG. 7.

第7圖為本發明之動作說明流程圖(整體之2)。 Fig. 7 is a flowchart for explaining the operation of the present invention (2 of the whole).

於第7圖中,S1步驟具備有Si基板。 In FIG. 7, the S1 step is provided with a Si substrate.

S2步驟係進行表面處理。此步驟係在S1步驟中所具備的矽基板(例如,N型)上形成氮化膜,此外,形成有指狀電極、匯流條電極等的圖案。此類似於例如以往的第11圖,於矽基板31之正面側形成氮化膜32,且形成有指狀電極33、匯流條電極34等的圖案。 Step S2 is a surface treatment. In this step, a nitride film is formed on the silicon substrate (for example, N-type) included in step S1, and patterns of finger electrodes, bus bar electrodes, and the like are formed. This is similar to, for example, the conventional FIG. 11 in which a nitride film 32 is formed on the front side of the silicon substrate 31, and patterns of finger electrodes 33, bus bar electrodes 34, and the like are formed.

S3步驟係執行背面處理。此步驟在矽基板的背面形成有鋁圖案,例如以網版印刷在矽基板之整個背面上用鋁糊膏形成有鑿孔的鋁電極。並且,本發明進入到S5步驟。 The step S3 is to perform backside processing. In this step, an aluminum pattern is formed on the back surface of the silicon substrate. For example, a screen printed on the entire back surface of the silicon substrate is used to form a holed aluminum electrode with aluminum paste. And, the invention proceeds to step S5.

S5步驟係燒結。此步驟係共同燒結由S2步驟的表面處理、S3步驟的背面處理所形成的圖案。 Step S5 is sintering. This step is to jointly sinter the pattern formed by the surface treatment in step S2 and the back treatment in step S3.

如以上所述,本發明可以在S1至S3及S5步驟中,在基板的正面側上形成指狀電極、匯流條電極,而在背面側形成有鑿孔的鋁電極。 As described above, in the present invention, in steps S1 to S3 and S5, finger electrodes and bus bar electrodes can be formed on the front side of the substrate, and holed aluminum electrodes can be formed on the back side.

S6步驟係進行測量(1)。此步驟可以在S7步驟之ABS焊接之前使用探針測量ABS焊接之前的太陽能電池的電氣特性(參考第10圖之焊接前的資料)。 Step S6 is to measure (1). In this step, the electrical characteristics of the solar cell before ABS welding can be measured with a probe before the ABS welding in step S7 (refer to the data before welding in Figure 10).

S7步驟係進行ABS焊接。此步驟係將ABS焊料直接焊接到Si基板的鋁電極有鑿孔的部分的基板1上,並且以從孔的邊緣突出至鋁電極上約0.1mm以上之方式來進行焊接。又,也可以對焊帶13一起進行焊接(參考第1圖(b))。 Step S7 is ABS welding. In this step, ABS solder is directly soldered to the substrate 1 of the Si electrode's aluminum electrode with a holed portion, and soldering is performed in such a manner that it protrudes from the edge of the hole to about 0.1 mm or more on the aluminum electrode. In addition, the welding tape 13 may be welded together (refer to FIG. 1 (b)).

S8步驟係進行測量(2)。此步驟可以在S7步驟之ABS焊接之後測量太陽能電池的電氣特性(參考第10圖之焊接後的資料)。 Step S8 is to measure (2). In this step, the electrical characteristics of the solar cell can be measured after the ABS welding in step S7 (refer to the data after welding in Figure 10).

如以上所述,在Si基板的正面上形成有氮化物膜,且形成 有指狀電極、匯流條電極等的圖案,而在Si基板背面上形成有鑿孔的鋁電極之圖案後一同燒結,即可以形成此等圖案。 As described above, a nitride film is formed on the front surface of the Si substrate and is formed There are patterns of finger electrodes, bus bar electrodes, etc., and patterns of aluminum electrodes with holes drilled on the back surface of the Si substrate are sintered together to form these patterns.

另一方面,以往,在S1至S3步驟之後,接著在S4步驟中進一步在Si基板上塗佈銀糊膏。此係在S3步驟之背面處理上形成有鑿孔的鋁電極的一部分中,進一步網版印刷銀糊膏且在該鋁電極的孔之內部的Si基板上形成有銀圖案。且,如同本發明,藉由進行S5到S8步驟,在Si基板的正面上形成有氮化物膜,且形成有指狀電極、匯流條電極等的圖案,而在Si基板背面上有鑿孔的鋁電極之內部形成有銀圖案,並將焊帶焊接到此處以製作外部引線,即可實現將該外部引線透過銀圖案牢固地固定到基板上。 On the other hand, in the past, after steps S1 to S3, a silver paste was further applied on the Si substrate in step S4. This is a part of the aluminum electrode in which the hole is formed on the back surface process of step S3, a silver paste is further screen-printed, and a silver pattern is formed on the Si substrate inside the hole of the aluminum electrode. And, like the present invention, by performing steps S5 to S8, a nitride film is formed on the front surface of the Si substrate, and patterns of finger electrodes, bus bar electrodes, etc. are formed, and a hole is drilled on the back surface of the Si substrate A silver pattern is formed inside the aluminum electrode, and a solder ribbon is welded here to make an external lead, so that the external lead can be firmly fixed to the substrate through the silver pattern.

第8圖為本發明之詳細動作說明流程圖(二)。此步驟係第7圖的S7步驟之ABS焊接的詳細流程圖。 Fig. 8 is a flowchart (2) illustrating the detailed operation of the present invention. This step is a detailed flow chart of ABS welding in step S7 of Figure 7.

在第8圖中,S11步驟係預熱基板。此步驟係在將第1圖的基板1放置在未圖示的機台狀態下,以基板加熱器3預熱基板1,且將溫度加熱到略低於ABS焊料11會熔化的溫度之溫度。 In Fig. 8, step S11 is to preheat the substrate. This step is to preheat the substrate 1 with the substrate heater 3 in a state where the substrate 1 of FIG. 1 is placed on a machine not shown, and heat the temperature to a temperature slightly lower than the temperature at which the ABS solder 11 will melt.

在S12步驟中,加熱烙鐵頭且施加超音波。此步驟係從第1圖的烙鐵加熱電源23供電給烙鐵21,將烙鐵頭22加熱到既定的溫度,並且讓烙鐵超音波功率機構24將既定輸出的超音波提供給烙鐵頭22。 In step S12, the iron tip is heated and ultrasonic waves are applied. This step supplies power to the soldering iron 21 from the soldering iron heating power supply 23 of FIG. 1, heats the soldering iron head 22 to a predetermined temperature, and causes the soldering iron ultrasonic power mechanism 24 to supply the predetermined output ultrasonic wave to the soldering iron head 22.

S13步驟係供應ABS焊料。此步驟係由第1圖的ABS焊接材料供應機構12以既定速度在烙鐵頭22及待焊接部分之間供應線狀或帶狀ABS焊料11。ABS焊料11的供應量,係以供應到基板背面2有鑿孔的部分並從該孔的邊緣突出於基板背面(鋁電極)2上約0.1mm以上的方式來 進行供應(參考第9圖,供應量由實驗決定)。又,如第1圖(b)所示,當焊接焊帶13時,只要以與ABS焊料重疊之方式供給焊帶13即可。 Step S13 is to supply ABS solder. In this step, the ABS solder material supply mechanism 12 of FIG. 1 supplies the linear or ribbon ABS solder 11 between the soldering iron tip 22 and the portion to be soldered at a predetermined speed. The amount of ABS solder 11 is supplied in such a way that it is supplied to the backside 2 of the substrate with a hole drilled and protrudes from the edge of the hole over the backside (aluminum electrode) 2 of the substrate by about 0.1 mm or more Carry out the supply (refer to Figure 9, the supply is determined by experiment). Moreover, as shown in FIG. 1(b), when soldering the solder ribbon 13, it is only necessary to supply the solder ribbon 13 so as to overlap with the ABS solder.

S14步驟係移動烙鐵頭。此步驟係以移動機構25移動第1圖的烙鐵頭22,且在第1圖中係往右方移動。 Step S14 is to move the tip of the soldering iron. In this step, the moving mechanism 25 moves the soldering iron tip 22 in FIG. 1 and moves to the right in FIG. 1.

如上所述,可以使ABS焊料11焊接到基板背面2有鑿孔的部分並且從該孔的邊緣突出約大等於0.1mm的方式,使烙鐵頭22移動以進行超音波焊接。 As described above, the ABS solder 11 can be soldered to the portion of the back surface 2 of the substrate where the hole is drilled and protruding from the edge of the hole by approximately 0.1 mm or so, the soldering iron tip 22 can be moved to perform ultrasonic soldering.

第9圖為本發明之樣本照片例。 Figure 9 is an example of a sample photograph of the present invention.

第9圖(a)表示接觸寬度約為0.1mm的樣本照片,第9圖(b)表示接觸寬度約為0.5mm的樣本照片,第9圖(c)表示接觸寬度約為1.0mm的樣本照片。於此,所顯示者分別為,以使得各照片中的橫向的帶狀物可以正好覆蓋(突出量約0.1mm,0.5mm,1.0mm)在基板背面2的帶狀孔上之方式焊接ABS焊料11的照片例。 Figure 9(a) shows a sample photo with a contact width of about 0.1mm, Figure 9(b) shows a sample photo with a contact width of about 0.5mm, and Figure 9(c) shows a sample photo with a contact width of about 1.0mm . Here, the figures show that the ABS solder is soldered in such a way that the horizontal strips in each photo can be just covered (protrusion amount is about 0.1 mm, 0.5 mm, 1.0 mm) on the strip holes on the back surface 2 of the substrate 11 photo examples.

第9圖的(a-1)、(b-1)、(c-1)分別顯示出第9圖的(a)、(b)、(c)的側視示意圖。接觸寬度係從孔的邊緣到基板(Al)2的背面上的突出量,並且顯示出約0.1mm,0.5mm和1.0mm的例子。 (A-1), (b-1), and (c-1) of FIG. 9 show schematic side views of (a), (b), and (c) of FIG. 9, respectively. The contact width is the amount of protrusion from the edge of the hole to the back surface of the substrate (Al) 2, and shows examples of about 0.1 mm, 0.5 mm, and 1.0 mm.

如上所述,在基板(Si)1上形成的基板背面(鋁電極)2中,設置帶狀的孔,將ABS焊料11以超音波焊接到該帶狀孔的部分(參考第1(a)圖),或者將焊帶13疊加在ABS焊料11上並進行超音波焊接(參考第1(b)圖),並且以調整ABS焊料11的供應量或烙鐵頭22的移動量,以從孔的邊緣突出到基板背面(鋁電極)2上約0.1mm,0.5mm,1.0mm的方式,來進行超音波焊接。 As described above, in the substrate back surface (aluminum electrode) 2 formed on the substrate (Si) 1, a band-shaped hole is provided, and the ABS solder 11 is ultrasonically soldered to the part of the band-shaped hole (refer to the first (a) Figure), or superimposing the soldering tape 13 on the ABS solder 11 and performing ultrasonic welding (refer to FIG. 1(b)), and adjusting the supply amount of the ABS solder 11 or the moving amount of the soldering iron head 22 to remove the hole Ultrasonic welding is performed by protruding the edge to the back of the substrate (aluminum electrode) 2 by about 0.1 mm, 0.5 mm, and 1.0 mm.

第10圖為本發明之測量例。此表格係表示上述之第9(a)圖,第9(b)圖和第9(c)圖之ABS焊接之前(焊接前)及焊接之後(焊接後)的測量太陽能電池的電氣特性的例子。各測量例顯示十個測量例的平均值。此外,測量係讓接觸端子接觸到第9圖的基板背面(鋁電極)2的帶狀之孔的中心部分(焊接前為孔的中心部分的基板1的部分,焊接料後為已焊接之孔的中央部分的該焊料的部分)來測量電氣特性。 Fig. 10 is a measurement example of the present invention. This table shows an example of measuring the electrical characteristics of solar cells before welding (before welding) and after welding (after welding) of ABS in Figure 9(a), Figure 9(b) and Figure 9(c) above. . Each measurement example shows the average value of ten measurement examples. In addition, the measurement is such that the contact terminal is in contact with the center portion of the strip-shaped hole on the back surface (aluminum electrode) 2 of FIG. The central part of the solder part) to measure electrical characteristics.

在第10圖中,測量例之一次,兩次和三次,分別對應到第9圖(a)之接觸寬度約為0.1mm、(b)接觸寬度約為0.5mm、(c)接觸寬度約為1.0mm。於此,Isc表示太陽能電池的短路電流,Voc表示太陽能電池的開路電壓,EFF表示太陽能電池的最大效率,FF表示太陽能電池的最大效率/(VocxIsc)。「焊接前」為表示焊接ABS焊料前的數值,「焊接後」為表示焊接ABS焊料後的數值,「變化量」為表示從焊接前至焊接後的變化量。 In Figure 10, the measurement example is one, two and three times, which correspond to Figure 9 (a), the contact width is about 0.1mm, (b) the contact width is about 0.5mm, (c) the contact width is about 1.0mm. Here, Isc represents the short-circuit current of the solar cell, Voc represents the open-circuit voltage of the solar cell, EFF represents the maximum efficiency of the solar cell, and FF represents the maximum efficiency of the solar cell/(VocxIsc). "Before soldering" means the value before soldering ABS solder, "After soldering" means the value after soldering ABS solder, and "Change" means the amount of change from before soldering to after soldering.

於此,最大效率(EFF)為: Here, the maximum efficiency (EFF) is:

‧測量例的「一次」(接觸寬度約0.1mm)之變化量為-0.40; ‧The amount of change of "one time" (contact width about 0.1mm) of the measurement example is -0.40;

‧測量例的「二次」(接觸寬度約0.5mm)之變化量為-0.18; ‧Measurement example "secondary" (contact width about 0.5mm) change amount is -0.18;

‧測量例的「三次」(接觸寬度約1.0mm)之變化量為-0.13; ‧The variation of "three times" (contact width about 1.0mm) of the measurement example is -0.13;

乃隨著接觸寬度之增加而縮小了從「焊接前」到「焊接後」的最大效率之變化量,亦即,於本實驗中首次發現隨著ABS焊料11從鋁電極(基板背面)2的孔的邊緣突出到該鋁電極2上之突出量增加到約0.1mm,0.5mm,1.0mm,縮小了最大效率之從「焊接前」到「焊接後」的變化量。 With the increase of the contact width, the maximum efficiency change from "before soldering" to "after soldering" is reduced, that is, in this experiment, it is found for the first time that with the ABS solder 11 from the aluminum electrode (back side of the substrate) 2 The amount of protrusion of the edge of the hole onto the aluminum electrode 2 is increased to about 0.1mm, 0.5mm, 1.0mm, which reduces the amount of change from "before welding" to "after welding" for maximum efficiency.

亦即,藉由ABS焊料11從鋁電極(基板背面)2的孔的邊緣突出到該鋁電極2上之突出量增加到約0.1mm,0.5mm,1.0mm,添加(增加)讓電子從突出的ABS焊料11的一部分(0.1mm,0.5mm,1.0mm)透過鋁電極發射到基板1的路徑,對應於此部分而提高了最高效率。 That is, the amount of protrusion of the aluminum electrode 2 from the edge of the hole of the aluminum electrode (back side of the substrate) 2 to the aluminum electrode 2 by ABS solder 11 is increased to about 0.1 mm, 0.5 mm, 1.0 mm, and the addition (increase) allows the electrons to protrude from the A part (0.1mm, 0.5mm, 1.0mm) of the ABS solder 11 is transmitted through the aluminum electrode to the path of the substrate 1, and the highest efficiency is improved corresponding to this part.

1‧‧‧基板 1‧‧‧ substrate

2‧‧‧基板背面 2‧‧‧Back of substrate

3‧‧‧基板加熱器 3‧‧‧Substrate heater

11‧‧‧ABS焊料 11‧‧‧ABS solder

12‧‧‧ABS焊接材料供應機構 12‧‧‧ABS welding material supply organization

13‧‧‧焊帶 13‧‧‧Solder tape

21‧‧‧烙鐵 21‧‧‧soldering iron

22‧‧‧烙鐵頭 22‧‧‧Iron tip

23‧‧‧烙鐵加熱電源 23‧‧‧soldering iron heating power supply

24‧‧‧烙鐵超音波功率產生機構 24‧‧‧Sonic iron power generating mechanism

25‧‧‧移動機構 25‧‧‧Moving mechanism

Claims (7)

一種太陽能電池,係形成當光照射到基板上時會產生高電子濃度的區域,並且在該區域上形成光可透過的絕緣膜,在該絕緣膜上形成指狀電極,該指狀電極係用於從前述區域取出電子的取出口,該太陽能電池係透過該指狀電極將前述電子取出到外部,並且使前述電子從前述基板的背面流入以形成電路,其中, A solar cell forms an area where high electron concentration is generated when light is irradiated on a substrate, and an insulating film through which light is transmitted is formed on the area, and finger electrodes are formed on the insulating film. The finger electrodes are used for In the extraction port for extracting electrons from the aforementioned area, the solar cell extracts the aforementioned electrons to the outside through the finger electrode, and flows the aforementioned electrons from the back of the substrate to form a circuit, wherein, 在該基板的整個背面上形成鋁電極之後於該電極的一部分形成孔、或形成在前述基板的整個背面的一部分已形成有孔之鋁電極,在該孔之內部的前述基板上直接進行焊接之後焊接焊帶、或者將焊帶直接焊接到該孔之內部的前述基板上,並且以從該孔的邊緣突出於鋁電極的上側0.1mm以上的方式進行焊接, After forming an aluminum electrode on the entire back surface of the substrate, a hole is formed in a part of the electrode, or an aluminum electrode with a hole is formed in a portion of the entire back surface of the substrate, and soldering is directly performed on the substrate inside the hole Welding the welding tape, or welding the welding tape directly to the aforementioned substrate inside the hole, and welding so as to protrude 0.1 mm or more from the edge of the hole above the upper side of the aluminum electrode, 使電子分別從前述焊接過之孔之內部的基板之部分及從孔的邊緣突出0.1mm以上的鋁電極之部分流入來增加轉換效率,且在前述焊帶和前述基板之間無Ag圖案以防止轉換效率之降低,並且防止因溫度循環測試導致之轉換效率之降低。 Electrons flow from the part of the substrate inside the soldered hole and the part of the aluminum electrode projecting more than 0.1 mm from the edge of the hole to increase the conversion efficiency, and there is no Ag pattern between the solder tape and the substrate to prevent The reduction of conversion efficiency, and prevent the reduction of conversion efficiency caused by temperature cycle test. 如申請專利範圍第1項所述之太陽能電池,其中前述鋁電極的形成有孔之部分,係與正面的取出線對應的部分。 The solar cell as described in item 1 of the scope of the patent application, wherein the part of the aluminum electrode in which the hole is formed is the part corresponding to the take-out line on the front side. 如申請專利範圍第1至2項中任一項所述之太陽能電池,其中前述焊接係超音波焊接。 The solar cell according to any one of items 1 to 2 of the patent application scope, wherein the aforementioned welding is ultrasonic welding. 如申請專利範圍第1至3項中任一項所述之太陽能電池,其中前述焊接係將要被焊接之部分的溫度預熱到焊料會熔化的溫度以下且為室溫以上之狀態下進行焊接。 The solar cell according to any one of claims 1 to 3, wherein the soldering is performed in a state where the temperature of the part to be soldered is preheated to a temperature below the temperature at which the solder will melt and above the room temperature. 如申請專利範圍第1至4項中任一項所述之太陽能電池,其中前述焊料係在錫中含有鋅、鋁、矽之一種以上,且不含Pb、Ag、Cu。 The solar cell according to any one of claims 1 to 4, wherein the solder contains at least one of zinc, aluminum, and silicon in tin, and does not contain Pb, Ag, or Cu. 如申請專利範圍第1至5項中任一項所述之太陽能電池,其中從前述孔的邊緣突出於鋁電極之上側0.1mm以上而進行焊接者,係突出於鋁電極的上側達0.1mm以上且為3.0mm以下而焊接者。 The solar cell according to any one of claims 1 to 5, wherein the edge of the hole protrudes above the aluminum electrode by 0.1 mm or more for welding, and protrudes above the aluminum electrode by 0.1 mm or more And the welding is less than 3.0mm. 一種太陽能電池的製造方法,該太陽能電池係形成當光照射到基板上時會產生高電子濃度的區域,並且在該區域上形成光可透過的絕緣膜,在該絕緣膜上形成指狀電極,該指狀電極係用於從該區域取出電子的取出口,該太陽能電池係透過該指狀電極將前述電子取出到外部,並且使前述電子從前述基板的背面流入以形成電路, A method of manufacturing a solar cell, which forms a region that generates high electron concentration when light is irradiated on a substrate, and forms a light-permeable insulating film on the region, and forms a finger electrode on the insulating film, The finger electrode system is used to take out electrons from the area. The solar cell takes the electrons to the outside through the finger electrodes and flows the electrons from the back of the substrate to form a circuit. 該製造方法係在前述基板的整個背面上形成鋁電極之後在該電極的一部分形成孔、或形成在前述基板的整個背面的一部分已形成有孔之鋁電極,在該孔之內部的前述基板上直接進行焊接之後焊接焊帶、或者將焊帶直接焊接到該孔之內部的前述基板上,並且以從該孔的邊緣突出於鋁電極的上側0.1mm以上的方式進行焊接, In this manufacturing method, after forming an aluminum electrode on the entire back surface of the substrate, a hole is formed in a part of the electrode, or an aluminum electrode formed with a hole in a portion of the entire back surface of the substrate is formed on the substrate inside the hole Welding the welding tape directly after welding, or welding the welding tape directly to the aforementioned substrate inside the hole, and welding so as to protrude from the edge of the hole above the upper side of the aluminum electrode by 0.1 mm or more, 使電子分別從前述焊接過之孔之內部的基板之部分及從孔的邊緣突出0.1mm以上的鋁電極之部分流入來增加轉換效率,且在該焊帶和該基板之間無Ag圖案以防止轉換效率之降低,並且防止因溫度循環測試導致之轉換效率之降低。 Electrons flow from the part of the substrate inside the soldered hole and the part of the aluminum electrode projecting more than 0.1 mm from the edge of the hole to increase the conversion efficiency, and there is no Ag pattern between the solder tape and the substrate to prevent The reduction of conversion efficiency, and prevent the reduction of conversion efficiency caused by temperature cycle test.
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Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06209115A (en) * 1993-01-12 1994-07-26 Sanyo Electric Co Ltd Solder part forming method of solar cell
JP2001036233A (en) * 1999-07-21 2001-02-09 Hitachi Ltd MOUNTED STRUCTURE UNIT USING Pb FREE SOLDER
JP4314872B2 (en) * 2003-04-24 2009-08-19 富士電機システムズ株式会社 Manufacturing method of solar cell module
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JP2008235549A (en) * 2007-03-20 2008-10-02 Sharp Corp Solar battery device and its manufacturing method
DE102008002954A1 (en) * 2008-07-18 2010-01-21 Schott Solar Gmbh Soldering point for solar modules and thin-film solar modules
DE102010016814B3 (en) * 2010-05-05 2011-10-06 Schott Solar Ag Method and device for applying solder to a workpiece
JP5676944B2 (en) * 2010-07-08 2015-02-25 デクセリアルズ株式会社 Solar cell module and method for manufacturing solar cell module
DE102011051511A1 (en) * 2011-05-17 2012-11-22 Schott Solar Ag Rear contact solar cell and method for producing such
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US10383207B2 (en) * 2011-10-31 2019-08-13 Cellink Corporation Interdigitated foil interconnect for rear-contact solar cells
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