TW202015150A - Substrate processing apparatus and substrate processing method for efficiently collecting mist and suppressing the formation of salts due to mist of acid and alkali in the exhaust passage and processing chamber - Google Patents

Substrate processing apparatus and substrate processing method for efficiently collecting mist and suppressing the formation of salts due to mist of acid and alkali in the exhaust passage and processing chamber Download PDF

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TW202015150A
TW202015150A TW108128585A TW108128585A TW202015150A TW 202015150 A TW202015150 A TW 202015150A TW 108128585 A TW108128585 A TW 108128585A TW 108128585 A TW108128585 A TW 108128585A TW 202015150 A TW202015150 A TW 202015150A
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substrate
processing
exhaust passage
gate
mist
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TWI751432B (en
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森秀樹
古矢正明
小林信雄
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日商芝浦機械電子裝置股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

An object of the invention is to efficiently collect mist and to suppress the formation of salts due to mist of acid and alkali in the exhaust passage and processing chamber particularly in the case of using an acidic processing liquid and an alkaline processing liquid, so as to achieve substrate processing with various processing liquids in the same processing chamber. To solve the problem, according to an embodiment of a substrate processing apparatus, the substrate processing apparatus is provided for processing a substrate by sequentially supplying a plurality of types of processing liquids to the substrate, and comprises: a processing chamber in which the processing of the substrate is performed; a rotary table that holds the substrate in the processing chamber and is driven to rotate; a processing liquid supply unit that supplies the processing liquid to the substrate held by the rotary table in the rotating state; a plurality of exhaust passages with a gate that can be opened and closed so that the mist of the processing liquid flows from the processing chamber to the outside; and a gate opening and closing switching unit (elevating cylinder and control unit) that switches the opening and closing of the gate according to the rotation direction of the substrate.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

發明領域 本發明為有關一種對旋轉的基板供給處理液後進行基板處理之基板處理裝置及基板處理方法。Field of invention The present invention relates to a substrate processing apparatus and a substrate processing method that perform substrate processing after supplying a processing liquid to a rotating substrate.

發明背景 在玻璃基板或半導體晶圓等基板形成電路圖案的過程中，會將顯影液、蝕刻液、剝離液、洗淨液等各種處理液供給到基板上。揭露了為了再利用或分別丟棄進行了這樣的基板處理之各種處理液而進行分離回收之旋轉處理裝置(專利文獻1)。 先前技術文獻 專利文獻Background of the invention In the process of forming a circuit pattern on a substrate such as a glass substrate or a semiconductor wafer, various processing solutions such as developer, etching solution, stripping solution, and cleaning solution are supplied to the substrate. A rotary processing device that separates and recovers various processing liquids that have undergone such substrate processing for reuse or separate disposal is disclosed (Patent Document 1). Prior technical literature Patent Literature

[專利文獻1]  日本專利第3948963號公報[Patent Document 1] Japanese Patent No. 3948963

發明概要 發明欲解決之課題 專利文獻1所記載之旋轉處理裝置為了將附著在基板之微粒數量達到最小值，藉由吸引在處理室內產生的霧氣(mist)排出到處理室外。Summary of the invention Problems to be solved by invention The rotary processing device described in Patent Document 1 discharges the mist generated in the processing chamber to the outside of the processing chamber in order to minimize the number of particles attached to the substrate.

然而，在旋轉處理裝置中期許將在處理中產生的霧氣有效率地排出到處理室外。又，當在上述各種處理液中包含有酸性的蝕刻液、鹼性的洗淨液等時，在處理室內或排氣通路中藉由酸鹼的反應而產生鹽(salt)，恐怕會招致處理室內之清潔度惡化或由於對排出管路的附著之排出量減低。雖然將酸性處理液的處理及鹼性處理液的處理分別由各自的處理裝置個別處理可以避免鹽的產生，但是會增加裝置面積或經費等，造成生產性惡化的情況。However, in the middle of the rotary processing apparatus, the mist generated during the process may be efficiently discharged outside the processing room. In addition, when the above-mentioned various processing liquids include acidic etching liquids, alkaline cleaning liquids, etc., salts are generated by the acid-base reaction in the processing chamber or in the exhaust passage, which may lead to processing The cleanliness of the room deteriorates or the discharge volume decreases due to the attachment to the discharge pipeline. Although the treatment of the acidic treatment liquid and the treatment of the alkaline treatment liquid are individually processed by the respective treatment devices to avoid the generation of salt, the area and cost of the device are increased, and the productivity is deteriorated.

本發明以提供一種可以有效率地進行霧氣回收，而且尤其是在使用酸性處理液與鹼性處理液的情況也可以抑制在排氣通路或處理室內之根據酸鹼的霧氣之鹽產生，可以達到在同一處理室內之根據各種處理液的基板處理之基板處理裝置及基板處理方法為目的。The present invention provides a method for efficiently recovering mist, and in particular, when acidic treatment liquid and alkaline treatment liquid are used, the generation of salt in the exhaust passage or treatment chamber according to acid and alkali mists can be suppressed. A substrate processing apparatus and a substrate processing method for substrate processing according to various processing liquids in the same processing chamber are intended.

用以解決課題之手段 為了解決上述課題，有關本發明之基板處理裝置，為對基板依序供給複數種處理液來處理基板之基板處理裝置，而且構成為具有：處理室，進行前述基板的處理；旋轉台，在前述處理室的內部保持前述基板並旋轉驅動；處理液供給部，對保持在前述旋轉台並呈旋轉狀態的前述基板供給處理液；複數個附可開關之閘門的排氣通路，讓前述處理液的霧氣從前述處理室流出到外部；及閘門開關切換組件，因應前述基板的旋轉方向切換前述閘門的開關。Means to solve the problem In order to solve the above-mentioned problems, the substrate processing apparatus of the present invention is a substrate processing apparatus that sequentially supplies a plurality of processing liquids to a substrate to process the substrate, and is configured to include: a processing chamber to perform the processing of the substrate; The inside of the processing chamber holds the substrate and drives it in rotation; the processing liquid supply unit supplies the processing liquid to the substrate held on the rotating table and rotates; a plurality of exhaust channels with switchable gates allow the processing liquid The mist flows out from the processing chamber to the outside; and the gate switch switching assembly switches the gate switch according to the rotation direction of the substrate.

再者，有關本發明之基板處理方法，為對基板依序供給複數種處理液來處理基板之基板處理方法，而且構成為具有以下步驟：第1步驟，打開將第1處理液的霧氣從前述處理室內朝外部排氣之第1排氣通路的閘門，使載置在旋轉台之前述基板朝第1方向旋轉且供給前述第1處理液；第2步驟，在停止前述第1處理液的供給且使載置在前述旋轉台之前述基板的第1方向的旋轉停止後，使載置在前述旋轉台之前述基板朝與前述第1方向相反方向的第2方向旋轉；及第3步驟，關閉前述第1排氣通路的閘門，而且打開將第2處理液的霧氣從前述處理室內朝外部排氣之第2排氣通路的閘門，對載置在前述旋轉台的前述基板供給第2處理液。Furthermore, the substrate processing method of the present invention is a substrate processing method that sequentially supplies a plurality of processing liquids to a substrate to process the substrate, and is configured to have the following steps: In the first step, the mist of the first processing liquid is turned on from the foregoing The gate of the first exhaust passage that exhausts to the outside in the processing chamber rotates the substrate placed on the turntable in the first direction and supplies the first processing liquid; the second step stops the supply of the first processing liquid And after stopping the rotation of the substrate placed on the turntable in the first direction, rotating the substrate placed on the turntable in the second direction opposite to the first direction; and the third step, closing The gate of the first exhaust passage, and the gate of the second exhaust passage that exhausts the mist of the second processing liquid from the processing chamber to the outside is opened, and the second processing liquid is supplied to the substrate placed on the turntable .

發明效果 根據本發明，可以有效率地進行霧氣回收。又，即使在進行酸性處理液的處理及鹼性處理液的處理之情況下，也可以在同一處理室內處理。Invention effect According to the present invention, mist recovery can be performed efficiently. In addition, even when the treatment of the acidic treatment liquid and the treatment of the alkaline treatment liquid are performed, the treatment can be performed in the same treatment chamber.

用以實施發明的形態 以下，針對有關本發明實施形態之基板處理裝置使用圖面進行說明。Forms for carrying out the invention Hereinafter, the substrate processing apparatus according to the embodiment of the present invention will be described using the drawings.

有關本發明實施形態之基板處理裝置11的基本構造顯示於圖1至圖4。The basic structure of the substrate processing apparatus 11 according to the embodiment of the present invention is shown in FIGS. 1 to 4.

在圖1中，基板處理裝置11具備：四角柱形狀的架台12(以二點虛線表示)、配置在設於架台12上之框體(未圖示)內側的四角柱形狀處理室13。In FIG. 1, the substrate processing apparatus 11 includes a quadrangular column-shaped stage 12 (indicated by two-dotted lines), and a quadrangular column-shaped processing chamber 13 disposed inside a frame (not shown) provided on the stage 12.

在處理室13內部的中心部設有：保持被搬送到處理室13內之基板W並旋轉之旋轉台15、位於旋轉台15周圍之上部呈開口部之環狀杯體17。處理室13具有4個側面。在圖示例中，4個側面記載為具有透明性的構件。在對向的一對側面16a、16b(參照圖3)的其中一側面16a中，為了朝處理室13取出、置入基板W而形成有具備可開關的閘門(gate)之出入口18。在位於形成有該出入口18的側面16a兩側之側面19a、19b(參照圖2)中，分別各設有2個從處理室13的下部朝上部排氣之排氣通路。具體而言，在側面19a側中設有排氣通路22a、22b，在側面19b側中設有排氣通路22c、22d。排氣通路22a至22d分別與位於其上部之排氣導管25a、25b、25c、25d連接導通。排氣導管25a至25d為朝向其上端使橫剖面縮小的形狀，在上端與圓筒形狀的管體27a、27b、27c、27d連接導通。在管體27a至27d的前端中分別設有進行來自處理室13的排氣之排氣扇(未圖示)。又，出入口18之閘門開關機構(未圖示)與控制部70電連接，依據記憶在控制部70的基板處理資訊或各種程式控制該閘門的開關驅動。In the center of the processing chamber 13, a turntable 15 that holds and rotates the substrate W transported into the processing chamber 13 and an annular cup 17 that has an opening at the upper portion around the turntable 15 are provided. The processing chamber 13 has four sides. In the example shown in the figure, four sides are described as members having transparency. On one of the side surfaces 16a of the pair of opposing side surfaces 16a, 16b (see FIG. 3), an entrance 18 with a switchable gate is formed in order to take out and place the substrate W toward the processing chamber 13. Each of the side surfaces 19a and 19b (see FIG. 2) located on both sides of the side surface 16a where the inlet/outlet 18 is formed is provided with two exhaust passages for exhausting air from the lower portion of the processing chamber 13 toward the upper portion. Specifically, exhaust passages 22a and 22b are provided on the side surface 19a side, and exhaust passages 22c and 22d are provided on the side surface 19b side. The exhaust passages 22a to 22d are respectively connected to the exhaust ducts 25a, 25b, 25c, and 25d located at the upper part thereof. The exhaust ducts 25a to 25d have a shape whose cross section is reduced toward the upper end thereof, and are connected to and communicated with the cylindrical tube bodies 27a, 27b, 27c, and 27d at the upper end. Exhaust fans (not shown) for exhausting from the processing chamber 13 are provided at the front ends of the tube bodies 27a to 27d, respectively. In addition, the gate switching mechanism (not shown) of the gate 18 is electrically connected to the control unit 70, and controls the opening and closing of the gate according to the substrate processing information stored in the control unit 70 or various programs.

在處理室13的天井部中，設有將供給到基板處理裝置11所配置之清潔室內的清淨空氣進一步清淨化後供給到處理室13內之風扇過濾單元31。透過該風扇過濾單元31降流供給到處理室13內的清淨空氣如後述所示，連同因供給到基板W的處理液而產生的霧氣一起利用上述排氣風扇，通過排氣通路22(22a至22d)、排氣導管25(25a至25d)及管體27(27a至27d)朝外部排出。從風扇過濾單元31為經常朝處理室13內供給清淨空氣，排氣風扇也是經常運轉中。The patio portion of the processing chamber 13 is provided with a fan filter unit 31 that further purifies clean air supplied to the clean room where the substrate processing apparatus 11 is arranged and supplies it into the processing chamber 13. The clean air supplied to the processing chamber 13 through the fan filter unit 31 downflow as described below, and the mist generated by the processing liquid supplied to the substrate W is used by the exhaust fan through the exhaust passage 22 (22a to 22d), the exhaust duct 25 (25a to 25d) and the pipe body 27 (27a to 27d) are discharged to the outside. The fan filter unit 31 always supplies clean air into the processing chamber 13, and the exhaust fan is also constantly in operation.

在處理室13的底面14中形成開口部33(參照圖2)，在該開口部33的正下方設有使旋轉台15旋轉之驅動馬達35。驅動馬達35具有貫穿開口部33的旋轉軸36(參照圖2)。驅動馬達35與控制部70電連接，依據記憶在控制部70的基板處理資訊或各種程式控制其驅動。An opening 33 (see FIG. 2) is formed in the bottom surface 14 of the processing chamber 13, and a drive motor 35 that rotates the turntable 15 is provided directly below the opening 33. The drive motor 35 has a rotating shaft 36 (see FIG. 2) penetrating the opening 33. The driving motor 35 is electrically connected to the control unit 70 and controls its driving according to the substrate processing information stored in the control unit 70 or various programs.

杯體17具備：上部杯體17a，其具有環狀之垂直壁、及從該垂直壁上端以朝直徑方向立起的方式傾斜的環狀之傾斜壁；及下部杯體17b，其在比上部杯體17a更下部且位於直徑方向基板W側，具有環狀之垂直壁、及從該垂直壁上端以朝直徑方向立起的方式傾斜的環狀之傾斜壁。在上部杯體17a連接有使上部杯體17a升降之由未圖示的汽缸延伸之桿體38a，同樣地在下部杯體17b連接有使下部杯體17b升降之由未圖示的汽缸延伸之桿體38b。藉由使上部杯體17a、下部杯體17b升降，可進行基板W的搬入、處理液的分離回收、基板W的搬出。供給到基板W的處理液利用杯體17a、17b被分離，並且流入到設在杯體17a、17b下部的排液通路(未圖示)進行回收或丟棄。上部杯體17a的側面被嵌入到將處理室13分隔為上下的中分隔部24的開口。又，使桿體38a、38b上下動作之未圖示的伸縮汽缸與控制部70電連接，依據記憶在控制部70的基板處理資訊或各種程式控制其驅動。The cup body 17 includes: an upper cup body 17a having a ring-shaped vertical wall, and a ring-shaped inclined wall inclined from the upper end of the vertical wall in a diametrical direction; and a lower cup body 17b, which is above the upper part The lower part of the cup body 17a is located on the side of the diametrical substrate W, and has a ring-shaped vertical wall and a ring-shaped inclined wall inclined from the upper end of the vertical wall so as to rise in the radial direction. The upper cup body 17a is connected with a rod body 38a extending from an unillustrated cylinder that raises and lowers the upper cup body 17a. Similarly, the lower cup body 17b is connected to an unillustrated cylinder that extends from an unillustrated cylinder The shaft 38b. By raising and lowering the upper cup 17a and the lower cup 17b, the substrate W can be carried in, the processing liquid can be separated and recovered, and the substrate W can be carried out. The processing liquid supplied to the substrate W is separated by the cups 17a and 17b, and flows into a drain channel (not shown) provided in the lower part of the cups 17a and 17b to be recovered or discarded. The side surface of the upper cup 17a is fitted into the opening of the middle partition 24 that partitions the processing chamber 13 into upper and lower sides. Furthermore, a telescopic cylinder (not shown) that moves the rod bodies 38a and 38b up and down is electrically connected to the control unit 70, and its driving is controlled based on the substrate processing information stored in the control unit 70 or various programs.

在處理室13的側面19a側中，在與側面19a隔有特定間隔的位置設有與側面19a平行的內壁20a，進一步設有將利用側面19a與內壁20a所形成的空間以2等分方式在上下方向延伸之分隔壁21a，在側面19a側形成排氣通路22a、22b。同樣，在處理室13的側面19b中，在與側面19b隔有特定間隔的位置設有與側面19b平行的內壁20b，進一步設有將利用側面19b與內壁20b所形成的空間以2等分方式在上下方向延伸之分隔壁21b，在側面19b側形成排氣通路22c、22d。On the side surface 19a side of the processing chamber 13, an inner wall 20a parallel to the side surface 19a is provided at a position spaced apart from the side surface 19a, and a space formed by the side surface 19a and the inner wall 20a is further divided into two equal parts The partition wall 21a extending in the vertical direction forms exhaust passages 22a and 22b on the side surface 19a side. Similarly, the side wall 19b of the processing chamber 13 is provided with an inner wall 20b parallel to the side wall 19b at a certain distance from the side wall 19b, and further provided with a space formed by the side wall 19b and the inner wall 20b. The partition wall 21b extending vertically in a divided manner forms exhaust passages 22c and 22d on the side surface 19b side.

排氣通路22a至22d分別在內壁20a、20b下部形成長方形狀的開口部41a、41b、41c、41d(參照圖1、圖9)，在該等每一開口部41a至41d設有進行開口部41a至41d的開關之閘門部43a、43b、43c、43d。閘門部43a、43b、43c、43d具有：長方形狀的遮蔽板(gate)45a、45b、45c、45d；固定在遮蔽板45a至45d之以上下方向為軸方向之棒狀支撐軸46a、46b、46c、46d；為了使遮蔽板45a至45d升降而與支撐軸46a至46d連接之升降汽缸(桿體)48a、48b、48c、48d。換言之，對應於每一排氣通路22a至22d設有遮蔽板45a至45d。根據閘門部43a至43d之開口部41a至41d的開口範圍(開口量)可以利用控制部70因應基板W的旋轉速度(旋轉數)而控制在排氣最合適的開口範圍。由於當基板W的旋轉速度(旋轉數)變快時包含霧氣的氣體之迴旋速度也隨之變快，反之基板W的旋轉速度變慢時氣體的迴旋速度也變慢，因此以達到抑制處理室13內的微粒產生之效率佳的排氣之方式利用遮蔽板45a至45d的升降位置調整控制開口部41a至41d的開口範圍。對於氣體的迴旋速度當開口部41a至41d的開口範圍過大時，會使排氣通路22a至22d內的氣體流速變慢而無法充分排氣，易於在處理室13內產生微粒。另一方面，對於氣體的迴旋速度當開口部41a至41d的開口範圍過小時，排氣通路22a至22d內的氣體流速變快，氣體中的霧氣變成液滴狀而附著在處理室13內或排氣通路22a至22d內。尤其是，當在處理室13內附著處理液時，藉由其他處理液之基板處理而有在處理室13內產生鹽之虞。為此，以達到對於基板W的旋轉速度(旋轉數)為最佳的開口範圍之方式調整遮蔽板45a至45d的升降位置來進行控制。例如，對於基板W的每一旋轉速度、或是除了基板W的旋轉速度並且加上基板W的旋轉方向，藉由預先實驗等求出遮蔽板45a至45d的最佳開口範圍後記憶在控制部70的記憶部。控制部70從記憶部叫出已設定之因應基板W旋轉速度或旋轉方向之遮蔽板45a至45d的開口範圍，以達到該開口範圍的方式調整遮蔽板45a至45d的各升降位置亦可。又，升降汽缸48a至48d與控制部70電連接，依據記憶在控制部70的基板處理資訊或各種程式控制其驅動。利用升降汽缸48a至48d及控制部70構成閘門開關切換組件。The exhaust passages 22a to 22d are formed with rectangular openings 41a, 41b, 41c, and 41d (see FIGS. 1 and 9) at the lower portions of the inner walls 20a and 20b, respectively, and openings are provided in each of these openings 41a to 41d. Gate portions 43a, 43b, 43c, 43d of the switches of the portions 41a to 41d. The gate portions 43a, 43b, 43c, and 43d include: rectangular shielding plates (gates) 45a, 45b, 45c, and 45d; rod-shaped support shafts 46a and 46b fixed in the axial direction above and below the shielding plates 45a to 45d, 46c, 46d; lifting cylinders (rods) 48a, 48b, 48c, 48d connected to the support shafts 46a to 46d in order to raise and lower the shielding plates 45a to 45d. In other words, shielding plates 45a to 45d are provided corresponding to each of the exhaust passages 22a to 22d. The opening range (amount of opening) of the openings 41a to 41d of the shutter sections 43a to 43d can be controlled by the control section 70 in accordance with the rotation speed (the number of rotations) of the substrate W in the opening range most suitable for exhaust. When the rotation speed (number of rotations) of the substrate W becomes faster, the swirling speed of the gas containing the mist becomes faster, and conversely, when the rotation speed of the substrate W becomes slower, the swirling speed of the gas also becomes slower. The method of efficiently exhausting the particles in 13 generates and controls the opening range of the openings 41a to 41d by adjusting the lifting positions of the shielding plates 45a to 45d. When the opening range of the openings 41a to 41d is too large for the gas swirling speed, the flow velocity of the gas in the exhaust passages 22a to 22d is slowed and exhaust cannot be sufficiently performed, and particles are easily generated in the processing chamber 13. On the other hand, when the opening range of the openings 41a to 41d is too small, the gas flow rate in the exhaust passages 22a to 22d becomes faster, and the mist in the gas becomes droplets and attaches to the processing chamber 13 or In the exhaust passages 22a to 22d. In particular, when the processing liquid adheres in the processing chamber 13, there is a possibility that salt may be generated in the processing chamber 13 by substrate processing of other processing liquid. For this reason, the lifting and lowering positions of the shielding plates 45a to 45d are adjusted and controlled so as to achieve an opening range optimized for the rotation speed (number of rotations) of the substrate W. For example, for each rotation speed of the substrate W, or in addition to the rotation speed of the substrate W and the rotation direction of the substrate W, the optimal opening range of the shielding plates 45a to 45d is obtained by pre-experiment and the like and stored in the control section 70's memory department. The control unit 70 calls the set opening ranges of the shielding plates 45a to 45d in response to the rotation speed or direction of the substrate W from the memory unit, and adjusts the lifting positions of the shielding plates 45a to 45d so as to reach the opening range. In addition, the lift cylinders 48a to 48d are electrically connected to the control unit 70, and their driving is controlled based on the substrate processing information stored in the control unit 70 or various programs. The lift cylinders 48a to 48d and the control section 70 constitute a gate switch switching assembly.

在其間隔著基板W且位於對角線上之一對排氣通路22a、22c構成第1排氣通路，同樣在其間隔著基板W且位於對角線上之一對排氣通路22b、22d構成第2排氣通路(參照圖9、圖10)。詳細說明雖然在之後記述，但是在本實施形態中，因為當改變供給到基板W的處理液時，會改變旋轉台15的旋轉方向，為了有效率地進行排氣(霧氣回收)，會因應基板W的旋轉方向選擇排氣通路22a至22d。例如，在平面視中基板W朝逆時鐘方向旋轉的狀態下，將第1處理液也就是酸性處理液(例如蝕刻液)供給到基板W時，關閉與第2排氣通路22b、22d對應設置之閘門部43b、43d的遮蔽板45b、45d，並且使與第1排氣通路22a、22c對應設置之閘門部43a、43c的遮蔽板45a、45c上升而從打開的開口部41a、41c進行排氣。又，在平面視中基板W朝順時鐘方向旋轉的狀態下，將鹼性處理液(例如洗淨液)也就是第2處理液供給到基板W時，關閉遮蔽板45a、45c，並且使遮蔽板45b、45d上升而從開口部41b、41d進行排氣。A pair of exhaust passages 22a, 22c on the diagonal between which the substrate W is interposed constitutes the first exhaust passage, and a pair of exhaust passages 22b, 22d on the diagonal which interposes the substrate W constitutes the first exhaust passage 2 Exhaust passage (refer to FIGS. 9 and 10). Although the detailed description will be described later, in this embodiment, when the processing liquid supplied to the substrate W is changed, the rotation direction of the turntable 15 is changed, and in order to efficiently exhaust (mist recovery), the substrate The rotation direction of W selects the exhaust passages 22a to 22d. For example, when the substrate W is rotated counterclockwise in a plan view, when the first processing liquid, that is, an acidic processing liquid (for example, an etching liquid) is supplied to the substrate W, the second exhaust passages 22b and 22d are closed. The shutter plates 45b, 45d of the shutter portions 43b, 43d, and the shutter plates 45a, 45c of the shutter portions 43a, 43c provided corresponding to the first exhaust passages 22a, 22c are raised and discharged from the opened opening portions 41a, 41c gas. In addition, when the substrate W is rotated clockwise in a plan view, when an alkaline processing liquid (for example, cleaning solution), that is, the second processing liquid is supplied to the substrate W, the shielding plates 45a and 45c are closed and the shielding is performed. The plates 45b and 45d rise to exhaust from the openings 41b and 41d.

如圖4所示，在處理室13內設有對保持在旋轉台15並旋轉的基板W供給處理液之第1噴嘴臂部51及第2噴嘴臂部52(在圖1省略圖示)。第1噴嘴臂部51具有：以上下方向為旋動軸並在水平面上旋動之圓筒形狀的旋動軸體53、一端與旋動軸體53的側面連接並且朝另一端水平方向延伸之臂部55、及設置成貫穿旋動軸體53及臂部55的內部並且前端從臂部55的另一端突出之噴嘴56a、56b。藉由旋動軸體53的旋動，噴嘴56a、56b可以在基板W的中心部及與基板W分開的待機位置旋動。噴嘴56a、56b與供給處理液的處理液供給槽(未圖示)連接。例如，從噴嘴56a是將第1處理液也就是酸性處理液(蝕刻液等)供給到基板W，從噴嘴56b是將純水供給到基板W。As shown in FIG. 4, the processing chamber 13 is provided with a first nozzle arm portion 51 and a second nozzle arm portion 52 (not shown in FIG. 1) that supply a processing liquid to the substrate W held and rotated by the turntable 15. The first nozzle arm portion 51 has a cylindrical rotating shaft body 53 which is a rotating shaft in the vertical direction and is rotating on a horizontal plane, and one end is connected to the side surface of the rotating shaft body 53 and extends horizontally toward the other end The arm portion 55 and the nozzles 56 a and 56 b are provided so as to penetrate through the inside of the rotating shaft body 53 and the arm portion 55 and protrude from the other end of the arm portion 55. By the rotation of the rotation shaft body 53, the nozzles 56a and 56b can be rotated at the center portion of the substrate W and the standby position separated from the substrate W. The nozzles 56a and 56b are connected to a processing liquid supply tank (not shown) that supplies the processing liquid. For example, the slave nozzle 56a supplies the first processing liquid, that is, an acidic processing liquid (etching liquid, etc.) to the substrate W, and the slave nozzle 56b supplies pure water to the substrate W.

第2噴嘴臂部52也是與第1噴嘴臂部51相同的構造，具有旋動軸體57、臂部58及噴嘴60a、60b。藉由旋動軸體57的旋動，噴嘴60a、60b可以在基板W的中心部及與基板W分開的待機位置旋動。例如，從噴嘴60a是將第2處理液也就是鹼性處理液(鹼洗淨液：APM(氨水與過氧化氫水的混合液))供給到基板W，從噴嘴60b是將純水供給到基板W。第1噴嘴臂部51、第2噴嘴臂部52分別構成對於基板W的處理液供給部。第1噴嘴臂部51的旋動軸體53設在側面16a與側面19a交會的角落、第2噴嘴臂部52的旋動軸體57設在側面16a與側面19b交會的角落。又，從噴嘴56a、56b及噴嘴60a、60b之處理液供給、在待機位置與基板W中心部位置的往返移動為依據記憶在控制部70的基板處理資訊或各種程式予以控制。The second nozzle arm portion 52 also has the same structure as the first nozzle arm portion 51, and has a rotating shaft body 57, an arm portion 58, and nozzles 60a and 60b. By the rotation of the rotation shaft 57, the nozzles 60 a and 60 b can be rotated at the center portion of the substrate W and the standby position separated from the substrate W. For example, from the nozzle 60a, the second processing liquid, that is, the alkaline processing liquid (alkaline cleaning liquid: APM (mixed liquid of ammonia water and hydrogen peroxide water)) is supplied to the substrate W, and from the nozzle 60b, pure water is supplied to Substrate W. The first nozzle arm portion 51 and the second nozzle arm portion 52 each constitute a processing liquid supply portion for the substrate W. The rotating shaft body 53 of the first nozzle arm portion 51 is provided at the corner where the side surface 16a meets the side surface 19a, and the rotating shaft body 57 of the second nozzle arm portion 52 is provided at the corner where the side surface 16a intersects the side surface 19b. In addition, the supply of the processing liquid from the nozzles 56a, 56b and the nozzles 60a, 60b, and the reciprocating movement between the standby position and the center position of the substrate W are controlled based on the substrate processing information stored in the control unit 70 or various programs.

其次，針對使用有關本實施形態的基板處理裝置11之基板W的處理順序，參照圖5至圖10在以下進行說明。控制部70依據記憶的基板處理資訊及各種程式，控制根據基板處理裝置11之基板W處理(參照圖5)。Next, the processing procedure of the substrate W using the substrate processing apparatus 11 according to this embodiment will be described below with reference to FIGS. 5 to 10. The control unit 70 controls the processing of the substrate W according to the substrate processing apparatus 11 based on the stored substrate processing information and various programs (see FIG. 5 ).

打開設在基板處理裝置11的處理室13之出入口18，將利用搬送機器人(未圖示)搬送的基板W搬入到處理室13內，並且載置在旋轉台15(圖5的S11)。之後，使設在旋轉台15上的複數個支撐銷(未圖示)偏心旋轉後保持基板W。在基板W搬入的時點，關閉與第2排氣通路也就是排氣通路22b、22d對應的遮蔽板45b、45d，並且打開與第1排氣通路也就是排氣通路22a、22c對應的遮蔽板45a、45c。處理室13內的氣體環境利用排氣扇(未圖示)通過排氣通路22a、22c、排氣導管25a、25c、接著是管體27a、27c後被吸引、排氣到外部(參照圖6)。在基板W的搬入後就關閉基板W的出入口18。The gate 18 provided in the processing chamber 13 of the substrate processing apparatus 11 is opened, and the substrate W transported by the transport robot (not shown) is carried into the processing chamber 13 and placed on the turntable 15 (S11 in FIG. 5). Thereafter, a plurality of support pins (not shown) provided on the turntable 15 are eccentrically rotated to hold the substrate W. When the substrate W is carried in, the shielding plates 45b and 45d corresponding to the second exhaust passages, that is, the exhaust passages 22b, 22d are closed, and the shielding plates corresponding to the first exhaust passages, that is, the exhaust passages 22a, 22c are opened 45a, 45c. The gas environment in the processing chamber 13 is sucked by exhaust fans (not shown) through the exhaust passages 22a, 22c, the exhaust ducts 25a, 25c, and then the tubes 27a, 27c, and exhausted to the outside (see FIG. 6) ). After the substrate W is carried in, the inlet/outlet 18 of the substrate W is closed.

其次，如圖6所示藉由旋轉台15的旋轉，在平面視中使基板W朝第1方向也就是逆時鐘方向自旋旋轉(左方向旋轉)(S12)。旋轉數例如為500轉/分鐘。使第1噴嘴臂部51的旋動軸體53旋動，將噴嘴56a、56b從待機位置移動到基板W的中心位置(參照圖6)。從噴嘴56a是朝向基板W的旋轉中心附近開始第1處理液也就是酸性蝕刻液(例如磷酸溶液)的供給(S13)。供給到基板W中心附近之蝕刻液利用旋轉基板W的離心力擴散到周圍而可進行均一的蝕刻處理。蝕刻液的供給時間例如為30秒的程度。Next, as shown in FIG. 6, by rotation of the turntable 15, the substrate W is rotated in the first direction, that is, counterclockwise (left rotation) in plan view (S12). The number of rotations is, for example, 500 revolutions per minute. The rotating shaft 53 of the first nozzle arm portion 51 is rotated to move the nozzles 56a and 56b from the standby position to the center position of the substrate W (see FIG. 6). The supply of the first processing liquid, that is, the acidic etching liquid (for example, phosphoric acid solution) starts from the nozzle 56a toward the vicinity of the rotation center of the substrate W (S13). The etching solution supplied to the vicinity of the center of the substrate W is diffused to the surroundings by the centrifugal force of the rotating substrate W, and uniform etching can be performed. The supply time of the etching solution is, for example, about 30 seconds.

藉由基板W的逆時鐘方向的旋轉，在利用處理室13的底面14與中分隔部24所分隔的空間中，產生逆時鐘方向的迴旋流，包含酸性處理液的霧氣之氣體藉由排氣扇(未圖示)的吸引而如圖6所示，從遮蔽板45a、45c打開後之開口部41a、41c入侵，通過排氣通路22a、22c，經過排氣導管25a、25c再經過管體27a、27c排出到外部(以虛線箭頭顯示)。在基板W為逆時鐘方向旋轉時，如圖9的示意圖所示，隨著基板W的旋轉在基板W的周圍產生逆時鐘方向的迴旋流(包含酸性處理液的霧氣之氣體)。此時，隔著基板W位於對角線上的位置之排氣通路22a、22c之開口部41a、41c位於與迴旋流對向的位置，可以有效率地收入酸性處理液的霧氣等。藉由打開與成為對向於迴旋流的位置之開口部41a、41c對應設置的閘門部43a、43c之遮蔽板45a、45c，可以將包含酸性蝕刻液的霧氣之氣體的迴旋流從排氣通路22a、22c有效率地進行排氣。又，排氣通路22b、22d的開口部41b、41d如後述，因為使用於包含鹼性處理液的霧氣之氣體的排出，因此為了防止包含酸性處理液的霧氣入侵，使遮蔽板45b、45d呈關閉狀態。The counterclockwise rotation of the substrate W generates a counterclockwise swirling flow in the space partitioned by the bottom surface 14 of the processing chamber 13 and the middle partition 24, and the gas containing the mist of the acidic processing liquid is exhausted As shown in FIG. 6, the fan (not shown) invades through the openings 41a, 41c after the shielding plates 45a, 45c are opened, passes through the exhaust passages 22a, 22c, passes through the exhaust ducts 25a, 25c, and then passes through the tube 27a and 27c are discharged to the outside (shown by dotted arrows). When the substrate W rotates in the counterclockwise direction, as shown in the schematic diagram of FIG. 9, as the substrate W rotates, a counterclockwise swirling flow (a gas containing mist of the acidic treatment liquid) is generated around the substrate W. At this time, the openings 41a, 41c of the exhaust passages 22a, 22c via the substrate W located diagonally are located at positions opposed to the swirling flow, so that mist of the acidic treatment liquid can be efficiently received. By opening the shielding plates 45a, 45c of the shutter portions 43a, 43c provided corresponding to the openings 41a, 41c facing the swirling flow, the swirling flow of the gas containing the acidic etching liquid can be removed from the exhaust passage 22a and 22c exhaust efficiently. The openings 41b and 41d of the exhaust passages 22b and 22d will be described later. Since the gas used for the mist containing the alkaline treatment liquid is discharged, the shielding plates 45b and 45d are formed to prevent the mist containing the acid treatment liquid from entering. Disabled.

其次，在停止來自噴嘴56a之上述酸性蝕刻液供給之同時、或是停止之前，從噴嘴56b為朝向基板W的旋轉中心附近開始純水供給(S14)。該純水的供給時間例如為數秒的程度。在從噴嘴56b朝基板W的中心附近供給純水期間，利用旋動軸體53將噴嘴56b朝基板W的直徑方向移動稍微距離。此為用以防止與朝基板W的中心移動過來之第2噴嘴臂部52的噴嘴60a、60b之接觸、干擾的動作。接著，旋動第2噴嘴臂部52的旋動軸體57，將噴嘴60a、60b從待機位置移動到基板W的中心位置(參照圖7)。Next, while or before the supply of the acidic etching solution from the nozzle 56a is stopped, the supply of pure water is started from the nozzle 56b toward the vicinity of the rotation center of the substrate W (S14). The supply time of this pure water is, for example, about several seconds. While the pure water is being supplied from the nozzle 56b toward the center of the substrate W, the nozzle 56b is moved slightly in the diameter direction of the substrate W by the rotating shaft 53. This is an operation for preventing contact and interference with the nozzles 60a and 60b of the second nozzle arm portion 52 moving toward the center of the substrate W. Next, the rotating shaft 57 of the second nozzle arm portion 52 is rotated to move the nozzles 60a and 60b from the standby position to the center position of the substrate W (see FIG. 7).

在來自噴嘴56b的純水供給期間，停止基板W的旋轉，之後使基板W朝第2方向也就是平面視中為順時鐘方向(右方向)反旋轉(例如500轉/分鐘)，開始處理室13內的排氣切換(S15)。排氣切換為隨著基板的上述反旋轉開始，開始關閉與將包含酸性處理液的霧氣之氣體進行排氣之開口部41a、41c對應的遮蔽板45a、45c，開始打開與開口部41b、41d對應的遮蔽板45b、45d。當瞬間關閉分別與將包含酸性處理液的霧氣之氣體進行排氣的排氣通路22a、22c對應之開口部41a、41c，並且瞬間打開分別與將包含第2處理液也就是鹼性處理液的霧氣之氣體進行排氣的排氣通路22b、22d對應之開口部41b、41d，由於恐怕會擾亂處理室13內部的氣流，為了防止該現象的發生，而慢慢地關閉排氣通路22a、22b的開口部41a、41c，同時慢慢地打開排氣通路22c、22d的開口部41b、41d。在進行這樣的排氣切換時，有暫時根據排氣通路22a、22c及排氣通路22b、22d之雙排氣的情況。但是，排氣切換若是在停止對於基板W之酸性處理液的供給後進行時，藉由充分取得酸性處理液的供給停止後之時間後再進行排氣切換，或是如本實施形態所示，藉由在酸性處理的供給、及接著實施之鹼性處理液的供給之間進行純水供給，可以在排氣通路22a至22d內部抑制酸鹼的反應。又，在不必考量亂氣流等情況下，在排氣切換時瞬間關閉、或是瞬間打開切換的開口部亦可，在不必考量鹽等產生之處理液等的情況下，在1種處理液的處理結束之後不進行純水供給亦可。During the supply of pure water from the nozzle 56b, the rotation of the substrate W is stopped, and then the substrate W is rotated counterclockwise (right direction) in the second direction, that is, in plan view (for example, 500 rpm), and the processing chamber is started. The exhaust gas in 13 is switched (S15). The exhaust is switched to start closing the shielding plates 45a, 45c corresponding to the openings 41a, 41c for exhausting the gas containing the mist of the acidic treatment liquid as the substrate reverse rotation starts, and the openings 41b, 41d start to open Corresponding shielding plates 45b, 45d. When the openings 41a, 41c corresponding to the exhaust passages 22a, 22c for exhausting the gas containing the acidic treatment liquid, respectively, are momentarily closed, and the openings corresponding to the second treatment liquid, that is, the alkaline treatment liquid, are opened instantly. The openings 41b, 41d corresponding to the exhaust passages 22b, 22d for exhausting the gas of the mist, because the airflow inside the processing chamber 13 may be disturbed, in order to prevent this phenomenon, the exhaust passages 22a, 22b are slowly closed Openings 41a, 41c, and slowly open the openings 41b, 41d of the exhaust passages 22c, 22d. When such exhaust gas switching is performed, there may be a case where the dual exhaust gas is temporarily exhausted according to the exhaust passages 22a and 22c and the exhaust passages 22b and 22d. However, if the exhaust gas switching is performed after stopping the supply of the acidic processing liquid to the substrate W, the exhaust gas switching is performed after the time after the supply of the acidic processing liquid is stopped is sufficiently obtained, or as shown in this embodiment, By supplying pure water between the supply of the acidic treatment and the supply of the alkaline treatment liquid to be performed next, the reaction of the acid and alkali can be suppressed inside the exhaust passages 22a to 22d. In addition, when it is not necessary to consider the turbulent airflow, etc., it may be instantaneously closed when the exhaust gas is switched, or the switching opening is opened instantaneously. It is not necessary to supply pure water after the treatment.

從圖7所示的狀態，當利用控制部確認利用遮蔽板45a、45c完全關閉開口部41a、41c，並且使遮蔽板45b、45d的開口範圍達到控制部70所設定的量，接著基板W的旋轉速度達到例如500轉/分鐘時，停止來自第1噴嘴臂部51的噴嘴56b之純水供給。在停止該純水供給的同時，而且從第2噴嘴臂部52的噴嘴60a朝向基板W的旋轉中心附近開始第2處理液也就是鹼性處理液(鹼洗淨液：APM(氨水與過氧化氫水的混合液))的供給，開始清洗處理(S16)。當停止來自噴嘴56b之純水供給時，使第1噴嘴臂部51的旋動軸體53旋動後使噴嘴56a、56b從基板W上的位置移動到待機位置。從第2噴嘴臂部52的噴嘴60a將鹼性處理液對著朝順時鐘方向(右旋轉)旋轉中之基板W的中央部附近供給特定時間(例如30秒鐘)。From the state shown in FIG. 7, when the control unit confirms that the shielding plates 45a, 45c completely close the openings 41a, 41c, and the opening range of the shielding plates 45b, 45d reaches the amount set by the control unit 70, then the substrate W When the rotation speed reaches, for example, 500 rpm, the supply of pure water from the nozzle 56b of the first nozzle arm 51 is stopped. While stopping the supply of the pure water, the second processing liquid, which is the alkaline processing liquid (alkaline cleaning liquid: APM (ammonia cleaning solution and peroxidation), starts from the nozzle 60a of the second nozzle arm 52 toward the vicinity of the rotation center of the substrate W The mixed solution of hydrogen water)) is supplied to start the washing process (S16). When the supply of pure water from the nozzle 56b is stopped, the rotation shaft 53 of the first nozzle arm portion 51 is rotated, and the nozzles 56a and 56b are moved from the position on the substrate W to the standby position. The alkaline treatment liquid is supplied from the nozzle 60a of the second nozzle arm portion 52 toward the vicinity of the center portion of the substrate W rotating clockwise (right rotation) for a specific time (for example, 30 seconds).

在供給上述鹼性處理液的期間，如圖8所示，使排氣通路22a、22c的開口部41a、41c分別利用遮蔽板45a、45c處於關閉狀態，使設在排氣通路22b、22d的開口部41b、41d之遮蔽板45b、45d處於打開狀態。因此，藉由基板W的順時鐘方向的旋轉，在利用處理室13的底面14與中分隔部24分隔的空間中，產生順時鐘方向的迴旋流，如圖8所示，包含鹼性處理液的霧氣之氣體(以虛線箭頭顯示)利用排氣扇(未圖示)的吸引而從遮蔽板45b、45d打開後的開口部41b、41d入侵，通過排氣通路22b、22d，經過排氣導管25b、25d再經過管體27b、27d排出到外部。在基板W為順時鐘方向旋轉時，如圖10所示，隨著基板W的旋轉在基板W周圍產生順時鐘方向的迴旋流(包含鹼性處理液的霧氣之氣體)。此時，隔著基板W位於對角線上的位置之排氣通路22b、22d的開口部41b、41d位於與迴旋流對向的位置，可以有效率地收入鹼性處理液的霧氣等。藉由打開與對向於迴旋流的位置之開口部41b、41d對應設置之閘門部43b、43d的遮蔽板45b、45d，可以將包含鹼性處理液的霧氣之氣體的迴旋流從排氣通路22b、22d有效率地進行排氣。又，排氣通路22a、22c的開口部41a、41c為了防止包含鹼性處理液的霧氣之氣體入侵，因此呈現關閉遮蔽板45a、45c的狀態。During the supply of the alkaline treatment liquid, as shown in FIG. 8, the openings 41 a and 41 c of the exhaust passages 22 a and 22 c are closed by the shielding plates 45 a and 45 c, respectively, so that the exhaust passages 22 b and 22 d The shielding plates 45b and 45d of the openings 41b and 41d are in an open state. Therefore, due to the clockwise rotation of the substrate W, a clockwise vortical flow is generated in the space partitioned by the bottom surface 14 of the processing chamber 13 and the middle partition 24, as shown in FIG. 8, including the alkaline processing liquid The mist gas (shown by dotted arrows) invades through the openings 41b, 41d opened by the shielding plates 45b, 45d by the suction of the exhaust fan (not shown), passes through the exhaust passages 22b, 22d, and passes through the exhaust duct 25b and 25d are discharged to the outside through the tube bodies 27b and 27d. When the substrate W rotates in the clockwise direction, as shown in FIG. 10, a clockwise swirling flow (gas containing a mist of the alkaline processing liquid) is generated around the substrate W as the substrate W rotates. At this time, the openings 41b, 41d of the exhaust passages 22b, 22d across the substrate W at the diagonal position are located at positions opposed to the swirling flow, so that mist of the alkaline treatment liquid and the like can be efficiently collected. By opening the shielding plates 45b, 45d of the shutter portions 43b, 43d provided corresponding to the openings 41b, 41d at the positions facing the swirl flow, the swirl flow of the gas containing the mist of the alkaline treatment liquid can be removed from the exhaust passage 22b and 22d efficiently exhaust. In addition, the openings 41a, 41c of the exhaust passages 22a, 22c are in a state of closing the shielding plates 45a, 45c in order to prevent the intrusion of gas containing mist of the alkaline treatment liquid.

在停止上述鹼性處理液的供給之同時、或是在停止之前，從第2噴嘴臂部52之噴嘴60b朝向基板W的旋轉中心開始純水供給。該純水供給時間例如為10至20秒鐘。在經過上述特定時間後，停止根據噴嘴60b的純水供給。在純水供給停止後，旋動第2噴嘴臂部52的旋動軸體57使噴嘴60a、60b從基板W上的位置朝待機位置移動。The supply of pure water is started from the nozzle 60b of the second nozzle arm 52 toward the center of rotation of the substrate W while the supply of the alkaline treatment liquid is stopped or before the stop. The pure water supply time is, for example, 10 to 20 seconds. After the above specific time has elapsed, the supply of pure water according to the nozzle 60b is stopped. After the supply of pure water is stopped, the rotating shaft 57 that rotates the second nozzle arm 52 moves the nozzles 60a and 60b from the position on the substrate W toward the standby position.

之後，維持基板W的旋轉方向，使旋轉速度提升(例如1500轉/分鐘)，將存在於基板W表面上的純水甩掉，進行特定時間的基板W的乾燥處理(S17)。在乾燥處理結束後，停止朝順時鐘方向旋轉之基板W的反旋轉，進行排氣切換(S18)。排氣切換在基板W的上述反旋轉(順時鐘旋轉)停止後，開始關閉與將包含鹼性處理液的霧氣之氣體進行排氣的開口部41b、41d對應之遮蔽板45b、45d，並且開始打開與將包含酸性處理液的霧氣之氣體進行排氣的開口部41a、41c對應之遮蔽板45a、45c。當瞬間進行根據上述開關之排氣切換時，由於恐怕會擾亂處理室13內部的氣流，為了防止該現象的發生，根據遮蔽板45a至45d的開關之排氣切換為慢慢進行。根據該排氣切換，構成為本實施形態之基板處理的初始狀態(基板W的搬入時)也就是利用排氣通路22a、22c之酸性氣體的排氣狀態。After that, the rotation direction of the substrate W is maintained, the rotation speed is increased (for example, 1500 rpm), the pure water existing on the surface of the substrate W is thrown away, and the substrate W is dried for a specific time (S17). After the drying process is completed, the reverse rotation of the substrate W rotating clockwise is stopped, and the exhaust gas switching is performed (S18). After the reverse rotation (clockwise rotation) of the substrate W stops, the exhaust switching starts to close the shielding plates 45b and 45d corresponding to the openings 41b and 41d for exhausting the gas containing the mist of the alkaline processing liquid, and starts The shielding plates 45a and 45c corresponding to the openings 41a and 41c for exhausting the gas containing the mist of the acidic treatment liquid are opened. When switching the exhaust according to the above-mentioned switch instantaneously, since the air flow inside the processing chamber 13 may be disturbed, in order to prevent this phenomenon, the exhaust switching according to the switches of the shielding plates 45a to 45d is slowly performed. According to this exhaust gas switching, the initial state of the substrate processing of this embodiment (when the substrate W is carried in) is the exhaust state of the acid gas using the exhaust passages 22a and 22c.

在排氣切換結束後，使保持基板W之旋轉台15的支撐銷(未圖示)偏心旋轉解除基板W的保持。之後，打開基板W的出入口18，利用搬送機器人(未圖示)將基板W從處理室13搬出(S19)。在基板W搬出後，確認有無下個處理對象的基板W(S20)，在沒有下個處理基板時結束基板處理 (S20之否)。在有下個處理基板時(S20之是)，打開出入口18將利用搬送機器人搬送之未處理的基板W搬入到處理室13內，使其保持在旋轉台15，反覆進行根據上述處理液之基板處理。After the exhaust switching is completed, the support pin (not shown) of the turntable 15 holding the substrate W is eccentrically rotated to release the holding of the substrate W. After that, the entrance 18 of the substrate W is opened, and the substrate W is carried out of the processing chamber 13 by a transfer robot (not shown) (S19). After the substrate W is carried out, it is confirmed whether there is a substrate W to be processed next (S20), and when there is no next processed substrate, the substrate processing is ended (No at S20). When there is a next processing substrate (Yes in S20), the inlet/outlet 18 is opened to carry the unprocessed substrate W transferred by the transfer robot into the processing chamber 13 to be held on the rotary table 15, and the substrate according to the above-mentioned processing liquid is repeated deal with.

根據上述之本實施形態，從對基板W的處理室13內之搬入時，到基板W之朝逆時鐘方向的自旋旋轉之酸性處理液(蝕刻液)供給、純水供給、接著自旋旋轉停止(S11至S15(包含S18至S20))為打開與排氣通路22a、22c(第1排氣通路)的開口部41a、41c對應之遮蔽板45a、45c。接著，利用排氣扇(未圖示)將包含酸性處理液的霧氣之氣體經由開口部41a、41c被吸引，從排氣通路22a、22c通過排氣導管25a、25c及管體27a、27c排出到外部。此時排氣路22b、22d的開口部41b、41d藉由遮蔽板45b、45d而關閉。According to the present embodiment described above, from the time of loading into the processing chamber 13 of the substrate W, the acidic processing solution (etching solution) supplied to the counter-clockwise spin of the substrate W, the supply of pure water, and then the spin rotation The stop (S11 to S15 (including S18 to S20)) is to open the shielding plates 45a and 45c corresponding to the openings 41a and 41c of the exhaust passages 22a and 22c (first exhaust passage). Next, the gas containing the mist of the acid treatment liquid is sucked through the openings 41a, 41c by an exhaust fan (not shown), and is discharged from the exhaust passages 22a, 22c through the exhaust ducts 25a, 25c and the tube bodies 27a, 27c To the outside. At this time, the openings 41b and 41d of the exhaust passages 22b and 22d are closed by the shielding plates 45b and 45d.

另一方面，當從自旋旋轉停止起開始反旋轉(順時鐘方向的旋轉)時進行排氣切換，直到鹼處理液的供給、純水供給、自旋乾燥、反旋轉停止(S15至S18)都是打開與排氣通路22b、22d(第2排氣通路)的開口部41b、41d對應之遮蔽板45b、45d。接著，利用排氣扇(未圖示)將包含鹼性處理液的霧氣之氣體經由開口部41b、41d被吸引，從排氣通路22b、22d通過排氣導管25b、25d及管體27b、27d排出到外部。此時排氣路22a、22c的開口部41a、41c藉由遮蔽板45a、45c而關閉。On the other hand, when reverse rotation (clockwise rotation) is started after the spin rotation is stopped, exhaust gas switching is performed until the supply of the alkali treatment liquid, the supply of pure water, the spin drying, and the reverse rotation stop (S15 to S18) Both of them open the shielding plates 45b and 45d corresponding to the openings 41b and 41d of the exhaust passages 22b and 22d (second exhaust passage). Next, the gas of the mist containing the alkaline treatment liquid is sucked through the openings 41b, 41d by an exhaust fan (not shown), and passes through the exhaust ducts 25b, 25d and the tube bodies 27b, 27d from the exhaust passages 22b, 22d Discharge to the outside. At this time, the openings 41a, 41c of the exhaust passages 22a, 22c are closed by the shielding plates 45a, 45c.

在使基板W旋轉時，在基板W周圍會產生順著基板W的旋轉方向之迴旋流。在本實施形態中，使用圖9、圖10進行說明所示，由於構成為因應根據基板W的旋轉而產生的迴旋流方向，打開與迴旋流對向之遮蔽板45a、45c、或是遮蔽板45b、45d，因此可以有效率地進行從處理液產生的霧氣回收。When the substrate W is rotated, a swirling flow along the rotation direction of the substrate W is generated around the substrate W. In this embodiment, as shown in FIGS. 9 and 10, the shielding plates 45a, 45c or shielding plates facing the swirling flow are opened due to the direction of the swirling flow according to the rotation of the substrate W 45b and 45d, therefore, the mist generated from the processing liquid can be efficiently recovered.

又在本實施形態中，因為在供給酸性處理液時、及供給鹼性處理液時分開使用排氣通路22a至22d，因為防止包含根據酸性處理液之霧氣的氣體、及包含根據鹼性處理液之霧氣的氣體從相同的排氣通路22a至22d進行排氣，因此可以在排氣通路22a至22d、排氣導管25a至25d及管體27a至27d的內部抑制根據酸鹼的反應之鹽產生。又，即使在處理室13內部，因為在供給酸性處理液時，關閉用於鹼性處理液之霧氣排氣的排氣通路22b、22d之開口部41b、41d，在供給鹼性處理液時，關閉用於酸性處理液之霧氣排氣的排氣通路22a、22c之開口部41a、41c，可以抑制在處理室13內部之根據酸鹼的反應之鹽產生，可以抑制基板W的微粒附著。Also in this embodiment, the exhaust passages 22a to 22d are used separately when supplying the acid treatment liquid and when supplying the alkaline treatment liquid, because the gas containing mist based on the acid treatment liquid and the alkaline treatment liquid are prevented The gas of the mist is exhausted from the same exhaust passages 22a to 22d, so it is possible to suppress the generation of salts in the exhaust passages 22a to 22d, the exhaust ducts 25a to 25d and the pipe bodies 27a to 27d according to the reaction of acid and alkali . Furthermore, even inside the processing chamber 13, when the acidic treatment liquid is supplied, the openings 41b, 41d of the exhaust passages 22b, 22d for exhausting the mist of the alkaline treatment liquid are closed, and when the alkaline treatment liquid is supplied, Closing the openings 41a, 41c of the exhaust passages 22a, 22c for exhausting the mist of the acidic processing liquid can suppress the generation of salts in the processing chamber 13 according to the reaction of the acid and alkali, and can suppress the adhesion of particles of the substrate W.

在上述的實施形態中，雖然遮蔽板45a至45d構成為利用升降汽缸48a至48d朝上下方向升降，但是藉由使各遮蔽板45a至45d朝水平方向滑動進行開口部41a至41d的開關亦可。In the above-mentioned embodiment, although the shielding plates 45a to 45d are configured to be vertically lifted by the lifting cylinders 48a to 48d, the openings 41a to 41d may be switched by sliding the shielding plates 45a to 45d in the horizontal direction .

在實施形態中，以使用酸性處理液及鹼性處理液為例進行說明。但是在適用本發明時，處理液的種類只要是因應對於基板W所要求的處理適當選擇即可，並沒有特別限定。In the embodiment, an acid treatment liquid and an alkaline treatment liquid are used as an example for description. However, when the present invention is applied, the type of the processing liquid is not particularly limited as long as it is appropriately selected according to the processing required for the substrate W.

以上，雖然說明了本發明實施形態及各部變形例，但是該實施形態或各部變形例都只是作為一例予以揭示，並沒有限定發明範圍的意圖。上述之此等新穎實施形態可以利用其他各種形態予以實施，在不脫離發明宗旨的範圍內，可以進行各種省略、置換、變更。此等實施形態或其變形包含在發明範圍或宗旨內，而且也包含在申請專利範圍所記載的發明內。Although the embodiments of the present invention and the modified examples of the respective parts have been described above, the embodiments or the modified examples of the respective parts are disclosed as examples only, and there is no intention to limit the scope of the invention. The novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. Such embodiments or modifications thereof are included in the scope or gist of the invention, and also included in the invention described in the scope of patent application.

11:基板處理裝置 12:架台 13:處理室 14:底面 15:旋轉台 16a、16b:側面(處理室) 17:杯體 17a:上部杯體 17b:下部杯體 18:出入口 19a、19b:側面 20a、20b:內壁 21a、21b:分隔壁 22a、22b、22c、22d:排氣通路 24:中分隔壁 25a、25b、25c、25d:排氣導管 27a、27b、27c、27d:管體 31:風扇過濾單元 33:開口部 35:驅動馬達 36:旋轉軸 38a、38b:桿體 41a、41b、41c、41d:開口部 43a、43b、43c、43d:閘門部 45a、45b、45c、45d:遮蔽板 46a、46b、46c、46d:支撐軸 48a、48b、48c、48d:升降汽缸 51:第1噴嘴臂部 52:第2噴嘴臂部 53:旋動軸體 55:臂部 56a、56b:噴嘴 57:旋動軸體 58:臂部 60a、60b:噴嘴 70:控制部 W:基板 S11~S20:步驟11: Substrate processing device 12: Stand 13: processing room 14: Underside 15: Rotating table 16a, 16b: side (processing room) 17: Cup 17a: upper cup 17b: Lower cup 18: entrance 19a, 19b: side 20a, 20b: inner wall 21a, 21b: partition wall 22a, 22b, 22c, 22d: exhaust passage 24: Middle dividing wall 25a, 25b, 25c, 25d: exhaust duct 27a, 27b, 27c, 27d: tube body 31: Fan filter unit 33: opening 35: drive motor 36: axis of rotation 38a, 38b: rod body 41a, 41b, 41c, 41d: opening 43a, 43b, 43c, 43d: gate part 45a, 45b, 45c, 45d: shielding plate 46a, 46b, 46c, 46d: support shaft 48a, 48b, 48c, 48d: lifting cylinder 51: The first nozzle arm 52: Second nozzle arm 53: Rotate the shaft 55: arm 56a, 56b: nozzle 57: Rotate the shaft 58: arm 60a, 60b: nozzle 70: Control Department W: substrate S11~S20: Step

圖1為有關本發明實施形態之基板處理裝置的概略立體圖。 圖2為圖1之A-A剖面圖。 圖3為圖1之B-B剖面圖。 圖4為顯示有關本發明實施形態之基板處理裝置內部之概略立體圖。 圖5為顯示基板處理的順序之流程圖。 圖6為顯示基板處理步驟中的一步驟之概略立體圖。 圖7為顯示基板處理步驟中的一步驟之概略立體圖。 圖8為顯示基板處理步驟中的一步驟之概略立體圖。 圖9為顯示根據基板旋轉而產生之迴旋氣流方向與排氣通路閘門的配置關係之平面示意圖。 圖10為顯示根據朝與圖9的相反方向旋轉之基板而產生之迴旋氣流方向與排氣通路閘門的配置關係之平面示意圖。FIG. 1 is a schematic perspective view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1. FIG. 3 is a sectional view taken along line B-B in FIG. 1. 4 is a schematic perspective view showing the inside of a substrate processing apparatus according to an embodiment of the present invention. 5 is a flowchart showing the sequence of substrate processing. 6 is a schematic perspective view showing one step in the substrate processing step. 7 is a schematic perspective view showing one step in the substrate processing step. FIG. 8 is a schematic perspective view showing one step of the substrate processing steps. 9 is a schematic plan view showing the relationship between the direction of the swirling airflow generated according to the rotation of the substrate and the arrangement of the exhaust passage gate. 10 is a schematic plan view showing the relationship between the direction of the swirling air flow generated according to the substrate rotating in the opposite direction to FIG. 9 and the arrangement of the exhaust passage gate.

11:基板處理裝置 11: Substrate processing device

12:架台 12: Stand

13:處理室 13: processing room

14:底面 14: Underside

17:杯體 17: Cup

17a:上部杯體 17a: upper cup

21a、21b:分隔壁 21a, 21b: partition wall

22a、22b、22c、22d:排氣通路 22a, 22b, 22c, 22d: exhaust passage

24:中分隔壁 24: Middle dividing wall

25a、25b、25c、25d:排氣導管 25a, 25b, 25c, 25d: exhaust duct

27a、27b、27c、27d:管體 27a, 27b, 27c, 27d: tube body

31:風扇過濾單元 31: Fan filter unit

35:驅動馬達 35: drive motor

41a、41b:開口部 41a, 41b: opening

43a、43b、43c、43d:閘門部 43a, 43b, 43c, 43d: gate part

45a、45b、45c、45d:遮蔽板 45a, 45b, 45c, 45d: shielding plate

46a、46b、46c:支撐軸 46a, 46b, 46c: support shaft

48a、48b、48c:升降汽缸 48a, 48b, 48c: lifting cylinder

70:控制部 70: Control Department

W:基板 W: substrate

Claims (9)

一種基板處理裝置，為對基板依序供給複數種處理液來處理基板之基板處理裝置，具有： 處理室，進行前述基板的處理； 旋轉台，在前述處理室內部保持前述基板並旋轉驅動； 處理液供給部，對保持在前述旋轉台並呈旋轉狀態之前述基板供給處理液； 複數個附可開關之閘門的排氣通路，讓前述處理液的霧氣從前述處理室流出到外部；以及 閘門開關切換組件，因應前述基板的旋轉方向切換前述閘門的開關。A substrate processing device is a substrate processing device that sequentially supplies a plurality of processing liquids to a substrate to process the substrate, and has: Processing chamber, to process the aforementioned substrate; A rotary table that holds and rotates the substrate inside the processing chamber; A processing liquid supply unit that supplies the processing liquid to the substrate held on the rotating table and in a rotating state; A plurality of exhaust passages with switchable gates to allow the mist of the treatment liquid to flow out of the treatment chamber to the outside; and The gate switch switching assembly switches the gate switch according to the rotation direction of the substrate. 如請求項1之基板處理裝置，其中前述複數個附可開關之閘門的排氣通路包含第1排氣通路及第2排氣通路， 前述閘門開關切換組件在前述基板為朝第1方向旋轉之第1狀態下，打開位於與在前述第1狀態下產生的迴旋氣流對向的位置之前述第1排氣通路的閘門，而且關閉前述第2排氣通路的閘門，在前述基板為朝與前述第1方向反方向之前述基板的第2方向旋轉之第2狀態下，打開位於與在前述第2狀態下產生的迴旋氣流對向的位置之前述第2排氣通路的閘門，而且關閉前述第1排氣通路的閘門。The substrate processing apparatus according to claim 1, wherein the exhaust passages of the plurality of switchable gates include a first exhaust passage and a second exhaust passage, In the first state where the substrate rotates in the first direction, the gate switch switching assembly opens the gate of the first exhaust passage located at a position opposed to the swirling airflow generated in the first state, and closes the aforesaid The gate of the second exhaust passage is opened in the second state where the substrate rotates in the second direction of the substrate opposite to the first direction, and is located opposite to the swirling airflow generated in the second state The gate of the second exhaust passage at the position, and closes the gate of the first exhaust passage. 如請求項2之基板處理裝置，其中前述第1排氣通路及前述第2排氣通路分別在隔著前述基板的對角線上配置有一對。The substrate processing apparatus according to claim 2, wherein the first exhaust passage and the second exhaust passage are respectively arranged on a diagonal line across the substrate. 如請求項2或3之基板處理裝置，其中前述閘門開關切換組件因應前述基板的旋轉速度，控制前述第1排氣通路及前述第2排氣通路之閘門的開口部的開口範圍。The substrate processing apparatus according to claim 2 or 3, wherein the gate switch switching unit controls the opening range of the gate opening of the first exhaust passage and the second exhaust passage in response to the rotation speed of the substrate. 如請求項2或3之基板處理裝置，其中前述閘門開關切換組件在第1方向的旋轉停止後，在第2方向的旋轉開始前，關閉第1排氣通路的閘門而且打開第2排氣通路的閘門。The substrate processing apparatus according to claim 2 or 3, wherein after the rotation of the gate switch switching assembly in the first direction is stopped, before the rotation in the second direction is started, the gate of the first exhaust passage is closed and the second exhaust passage is opened Gate. 一種基板處理方法，為對基板依序供給複數種處理液來處理基板之基板處理方法，具有以下步驟： 第1步驟，打開將第1處理液的霧氣從前述處理室內排氣到外部之第1排氣通路的閘門，使載置在旋轉台的前述基板朝第1方向旋轉且供給前述第1處理液； 第2步驟，在停止前述第1處理液的供給且使載置在前述旋轉台之前述基板的第1方向的旋轉停止後，使載置在前述旋轉台之前述基板朝與前述第1方向相反方向之第2方向旋轉；及 第3步驟，關閉前述第1排氣通路的閘門，而且打開將第2處理液的霧氣從前述處理室內排氣到外部之第2排氣通路的閘門，對載置在前述旋轉台的前述基板供給第2處理液。A substrate processing method is a substrate processing method that sequentially supplies a plurality of processing liquids to a substrate to process the substrate, and has the following steps: In the first step, the gate of the first exhaust passage that exhausts the mist of the first processing liquid from the processing chamber to the outside is opened, the substrate placed on the turntable is rotated in the first direction, and the first processing liquid is supplied ; In the second step, after the supply of the first processing liquid is stopped and the rotation of the substrate placed on the turntable in the first direction is stopped, the substrate placed on the turntable is directed opposite to the first direction Rotation in direction 2 of the direction; and In the third step, the gate of the first exhaust passage is closed, and the gate of the second exhaust passage that exhausts the mist of the second processing liquid from the processing chamber to the outside is opened, and the substrate placed on the turntable The second processing liquid is supplied. 如請求項6之基板處理方法，其中前述第1排氣通路及前述第2排氣通路分別在隔著前述基板的對角線上配置有一對，前述第1排氣通路的閘門位於與在前述基板朝前述第1方向旋轉時產生的迴旋氣流對向的位置，前述第2排氣通路的閘門位於與在前述基板朝前述第2方向旋轉時產生的迴旋氣流對向的位置。The substrate processing method according to claim 6, wherein the first exhaust passage and the second exhaust passage are respectively arranged on a diagonal line across the substrate, and the gate of the first exhaust passage is located on the substrate At a position where the swirling airflow generated when rotating in the first direction opposes, the gate of the second exhaust passage is located opposite to the swirling airflow generated when the substrate rotates in the second direction. 如請求項6或7之基板處理方法，其中前述第1排氣通路之閘門的開口範圍因應前述基板之朝前述第1方向旋轉的旋轉速度而變動，前述第2排氣通路之閘門的開口範圍因應前述基板之朝前述第2方向旋轉的旋轉速度而變動。The substrate processing method according to claim 6 or 7, wherein the opening range of the gate of the first exhaust passage varies according to the rotation speed of the substrate in the first direction, and the opening range of the gate of the second exhaust passage It varies according to the rotation speed of the substrate in the second direction. 如請求項6或7之基板處理方法，其在停止前述基板之前述第1方向的旋轉後，在前述第2方向的旋轉開始前，關閉前述第1排氣通路的閘門而且打開前述第2排氣通路的閘門。According to the substrate processing method of claim 6 or 7, after stopping the rotation of the substrate in the first direction, before starting the rotation of the second direction, the gate of the first exhaust passage is closed and the second row is opened Gate of gas passage.
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