JP2005032869A - Substrate treatment equipment - Google Patents

Substrate treatment equipment Download PDF

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Publication number
JP2005032869A
JP2005032869A JP2003194362A JP2003194362A JP2005032869A JP 2005032869 A JP2005032869 A JP 2005032869A JP 2003194362 A JP2003194362 A JP 2003194362A JP 2003194362 A JP2003194362 A JP 2003194362A JP 2005032869 A JP2005032869 A JP 2005032869A
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Japan
Prior art keywords
substrate
processing
liquid
treatment
processing apparatus
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JP2003194362A
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Japanese (ja)
Inventor
Naoya Hirano
直也 平野
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SPC Electronics Corp
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SPC Electronics Corp
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Priority to JP2003194362A priority Critical patent/JP2005032869A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide substrate treatment equipment which can suppress the generation of dust and the leakage of a liquid by eliminating a driving section and a sealing section by a simple structure inside a treatment vessel, and which can be reduced in size as a whole. <P>SOLUTION: The substrate treatment equipment comprises the treatment vessel 10 for liquid-treating a substrate 1, substrate holders 11 which hold the peripheral edge of the substrate 1 in the treatment vessel 10 by circumferences of vertical inside shafts and rotate the substrate 1, treatment liquid supply nozzle 13 for supplying various treatment liquids to the substrate 1 held by the substrate holders 11, first partition plates 15 which are radially extended from the center via the substrate holders 11 to partition a space below the substrate 1 inside the treatment vessel 10, second partition plates 16 for partitioning spaces between the first partition plates 15, and a pair of gas nozzles 12 which blows out gas toward the substrate holders 11 in both directions. This substrate treatment equipment is so structured that the direction of rotation of the substrate 1 is changed according to the type of a treatment liquid, and the direction in which the gas nozzles 12 blow out gas toward each substrate holder 11 is also changed in conjunction with the change in rotating direction of the substrate 1, to blow down the treatment liquid into either a space R or a space L on the right and left of each of the first partition plates 15 respectively according to the type of the treatment liquid. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は基板処理装置に係り、より詳細には、例えば、半導体ウェーハ、液晶用ガラス、ハードディスク用基板、フォトマスク基板などの基板を密閉した処理槽内に保持して回転させ、この表面に処理液を供給(塗布)して液処理する基板処理装置に関する。
【0002】
【従来の技術】
【特許文献1】
特開2001−15402号公報
【0003】
従来、基板処理装置としては、例えば、半導体ウェーハ、液晶用ガラス、ハードディスク用基板、フォトマスク基板などの基板を密閉された処理槽内に1枚づつ搬入して回転させ、この表面に所望の液を供給して洗浄処理、エッチング処理、リンス処理などの液処理後、乾燥処理することまで含めた枚葉式の基板処理装置(例えば、特許文献1参照)が知られている。図11は、このような枚葉式の従来の基板処理装置を示した構成図である。
【0004】
図11に示すように、従来の基板処理装置は、処理槽30と、この処理槽30内で基板1を保持するスピンチャック31と、このスピンチャック31を回転させる回転モータ31aと、基板1の表面に種々の処理液を供給するノズル33と、基板1の回転に伴って基板1の外周に飛散した処理液を回収する傾斜部35aを有した回収部材35と、この回収部材35の内側底面に設けた第1排出口37aと、回収部材35の外側底面に設けた第2排出口37bと、回収部材35を昇降させる昇降機構36とを備えている。
【0005】
このような構成からなる従来の基板処理装置は、基板1をスピンチャック31に保持させて回転させ、この表面にノズル33から所定の処理液を供給して塗布することで液処理を実行する。この際、回収部材35は、スピンチャック31の外周に対して傾斜部35aが上方に位置する第1の状態(K1の位置)に配置し、処理液を内側の第1排出口37aから排出させる。そして、この基板1を続けて新たな他の処理液により液処理する場合、処理槽30内で最初の処理液と次の処理液とが混ざり合わないようにする必要がある。そこて、回収部材35は、傾斜部35aより上方にスピンチャック31で保持した基板1の表面が位置する第2の状態(K2の位置)に降下させることで、新たな他の処理液が最初の処理液に混ざり合うことなく振り分けられて第2排出口37bから排出することができる。
【0006】
このように従来の基板処理装置は、基板1の表面を複数の処理液で順番に処理する場合、処理槽30内で処理液が混ざり合わないようにするため、同一処理槽内に複数の排液系統(第1排出口37a及び第2排出口37b)を備え、処理液によって回収部材35を昇降させて排液系統を変えられる構造に形成していた。
【0007】
【発明が解決しようとする課題】
しかしながら、従来の基板処理装置では、処理槽30内で異なる処理液を振り分ける回収部材35に昇降機構36を設けた機械的な駆動部分を設ける必要があるため、その駆動する部分から発塵するという不具合があった。
また、従来の基板処理装置では、回収部材35が処理槽30の外部に昇降機構36を設けて内部に貫通させて設けているため、この貫通部分から液漏れしないように封止するシーリングが必ず存在し、且つ、アルカリなどの高濃度の処理液に対して耐性を確保する必要があり、高価な部品を多数使用した複雑な構造となる不具合があった。
さらに、従来の基板処理装置では、処理槽30内のスピンチャック31の周囲に処理液を回収する回収部材35を設ける必要があるため、処理槽30が横方向に大型化するという不具合があった。
本発明はこのような課題を解決し、処理槽内の簡単な構造により駆動部分とシーリング部分とを無くして発塵及び液漏れを抑え、装置全体を小型化できる基板処理装置を提供することを目的とする。
【0008】
【課題を解決するための手段】
上述した課題を解決するために、本発明による基板処理装置は、被処理物である基板を処理液により液処理する処理槽と、この処理槽内で基板の外周端を少なくとも3つ以上の鉛直した内側の軸周りに保持(挟持)して回転させる基板保持部と、この基板保持部に保持した基板の表面に異なる種々の処理液を供給できる処理液供給ノズルと、処理槽内の基板下部で中心から外側に基板保持部を介して放射状に延在して仕切る第1仕切り板と、この第1仕切り板の間を更に各々仕切る第2仕切り板と、基板を保持した基板保持部に向けて基板の正逆回転する両方向で各々ガスを吹き付ける2本一対のガスノズルとを備え、処理槽内で処理液の異なる種類に応じて基板の正逆の回転方向を変えるとともに、ガスノズルが各基板保持部に吹き付ける方向も正逆回転に合わせて変えることで、第1仕切り板を基準にして左右の空間に処理液の種類を振り分けて吹き落とすように設ける。
【0009】
ここで、処理槽は、ガスノズルの噴射により振り分けて吹き落とした処理液を底部から振り分けた種類毎に各々排出するドレインを設けるこが好ましい。また、処理槽は、処理液供給ノズルの処理後に基板の表面および裏面に純水を供給してリンスするリンスノズルを更に設けることが好ましい。また、処理槽は、窒素、又は有機化合物の蒸気を含んだ窒素、或いは乾燥空気、又は有機化合物の蒸気を含んだ乾燥空気のいずれかを基板の表裏各々の面に吹き付ける乾燥ノズルを更に備え、且つ、その乾燥ノズルを基板中心から基板外周端へ走査する機構を備えることが好ましい。
【0010】
【発明の実施の形態】
次に、添付図面を参照して本発明による基板処理装置の実施の形態を詳細に説明する。図1は、本発明による基板処理装置の一実施形態を示す構成図である。また、図2は、図1に示した矢印C方向から見た状態を示す図である。また、図3は、図2に示したD―D線の断面を示す図である。図4は、図1に示した基板処理装置の正回転(右回り)による動作を示す図である。また、図5は、図4に示したE―E線の断面を示す図である。また、図6は、図4に示したF―F線の断面を示す図である。また、図7は、図4に示した動作による処理液の流れを示す図である。また、図8は、図1に示した基板処理装置の逆回転(左回り)による動作を示す図である。また、図9は、図8に示した動作による処理液の流れを示す図である。また、図10は、図1に示した処理槽の他の実施例を示す図である。
【0011】
図1に示すように、本発明による基板処理装置の一実施形態は、図11に示した従来技術と同様に、半導体ウェーハ、液晶用ガラス、ハードディスク用基板、フォトマスク基板などの基板1を密閉した処理槽10内に1枚づつ搬入して回転させ、この基板1の表面に所望の処理液を供給して洗浄処理、エッチング処理、リンス処理などの液処理後、乾燥処理することまで含めた枚葉式の装置である。
また、本実施の形態は、図11に示した従来技術とは異なり、被処理物である基板1を処理液により液処理する処理槽10と、この処理槽10内で基板1の外周端を少なくとも3つ以上(図1では4つ)の鉛直した内側の軸周りに保持(挟持)して回転させる基板保持部11と、この基板保持部11に保持した基板1の表面に異なる種々の処理液を供給できる処理液供給ノズル13と、処理槽10内の基板1下部で中心から外側に基板保持部11を介して放射状に延在して仕切る第1仕切り板15と、この第1仕切り板15の間を更に各々仕切る第2仕切り板16と、基板1を保持した基板保持部11に向けて基板1の正逆回転する両方向で各々ガスを吹き付ける2本一対のガスノズル12とを備えている。即ち、本実施の形態では、処理槽10内で処理液の異なる種類に応じて基板1の正逆の回転方向を変えるとともに、ガスノズル12が各基板保持部11に吹き付ける方向も正逆回転に合わせて変えることで、第1仕切り板15を基準にして左右の空間R、Lに処理液の種類を振り分けて吹き落とせる(図7及び9参照)ように設けている。
【0012】
ここで、処理槽10は、箱状の内部に空洞を備えて密閉しており、この密閉された内部に基板1を図示していない側面の開閉扉を開閉して搬入できるように設けている。この処理槽10内には、前述した処理液供給ノズル13、ガスノズル12、及び基板保持部11を設けるとともに、処理液供給ノズル13の処理後に基板1の表面および裏面に純水を供給してリンスするリンスノズル14を更に設けている。そして、基板1には、図2に示すように、処理液供給ノズル13から薬液A、薬液B、純水などの処理液を選択的に供給し、ガスノズル12から窒素又は乾燥空気などの気体を噴出するとともに、リンスノズル14から純水を供給するように各々配置している。この際、ガスノズル12は、図1に示した基板保持部11の両側に一対に配置されており、基板保持部11に向けて基板1の右回り(正回転)方向に気体を噴出する右ガスノズル12aと、基板1の左回り(逆回転)方向に気体を噴出する左ガスノズル12bとを各々設けて両方向から噴射可能にしている。また、基板保持部11は、図2に示した処理槽10の外部下方に回転モータ11aを備え、この回転モータ11aに回転可能に軸支して処理槽10内に3つ以上貫通して延在する軸11bと、この軸11bの先端で円盤状に延在して基板1を載置する載置部11cと、この載置部11cの中心から直径が小さく円柱状に鉛直して基板1の外周を軸周りに保持(挟持)して回転させる接触部11dとを備えている。
【0013】
また、処理槽10は、例えば、基板保持部11を4箇所設ける場合、図3に示すように正方形の内部で中心から四隅に対角線状に延在する第1仕切り板15を設け、この第1仕切り板15の中心と四隅との間に各々基板保持部11が介在するように設けている。この処理槽10には、第2仕切り板16が第1仕切り板15の間を仕切るように十字状に延在し、基板保持部11の下部周囲に第1仕切り板15を介して右側に三角形の空間Rと、左側に三角形の空間Lとが各々左右対象に配置されている。ここで、処理槽10は、内部が箱状で正方形に形成した実施例を説明したが、これに限定されず、例えば、円柱状で中空内の底部を中心から放射状に第1仕切り板15及び第2仕切り板16により扇状に仕切ることも可能である。そして、処理槽10では、図1に示した右ガスノズル12aまたは左ガスノズル12bいずれかを回転方向に応じて噴射することで、基板1上の処理液を第1仕切り板15により仕切った左右いずれかの空間R、Lに振り分けて吹き落とすことが可能になる。また、処理槽10には、図3に示したように、ガスノズル12が噴射により振り分けて吹き落とした処理液を、空間R、L内の底部から振り分けた種類毎に各々排出するドレイン17各々設けている。即ち、このドレイン17は、第1仕切り板15を挟んで左側の空間Lに設けた左ドレイン17aと、右側の空間Rに設けた右ドレイン17bとで排出経路を分け、異なる種類の処理液が混ざらないように排出している。
【0014】
このように形成された本発明による基板処理装置の一実施形態を用いて薬液A及び薬液Bの処理液により基板1を液処理する場合、図4に示すように、まず、基板1を基板保持部11の接触部11dで保持させ、この基板保持部11を回転モータ11a(図2参照)により回転させることで基板1を回転させる。この図4においては、基板保持部11は左回りに回転しており、このとき基板1は右回り(正回転)となる。また、処理槽10内では、第1仕切り板15を挟んで左側の空間Lに設けた左ドレイン17bを閉めるとともに、右側の空間Rに設けた右ドレイン17aを開き、処理液供給ノズル13(図2参照)から回転する基板1の表面に薬液Aを適量供給する。
【0015】
ここで、本実施の形態では、基板保持部11が基板1を100rpm〜300rpmで回転させている。この場合、図5に示すように、基板1の外周端が基板保持部11に接触していない表面上では、処理液の表面張力により薬液Aが基板1上に留まって外周端から飛散しない状態を維持する。一方、基板1の外周端が基板保持部11の接触部11dに接触している場合、図6に示すように、基板1上の処理液が基板保持部11の接触部11dに引き寄せられて接した状態になる。このような状態では、図6に示した接触部11dの直径Iを基板1の直径Jに対して小さく設け、基板1に対して接触部11dの遠心力(回転数)を高くすることで、基板1に接触した内側から処理液を図4に示した矢印Hの方向に飛散させることが可能になる。しかし、接触部11dの直径Iを極端に小さく設けてしまうと、基板1を所定の速度で回転させることが困難になるため、基板1と接触部11dとの直径比率の設定が重要になる。
【0016】
ここで、接触部11dの直径Iは、基板1の直径Jのおおよそ1/10程度とし、接触部11dの回転数が基板1の10倍とすることが最も好ましいことが分かっている。即ち、接触部11dの外周端での遠心力は、基板1の外周端での遠心力の約10倍とすることが最も好ましい。また、このような条件下で基板保持部11の接触部11dでは、図4に示したように、処理槽10の中央より遠い外側部分(基板1に接していいない外側部分)に付着した処理液が処理槽10の空間L側に飛ばないように、ガスノズル12から窒素または乾燥空気を吹き付けることで、処理液を矢印G方向に飛散させている。即ち、ガスノズル12は、基板1が右回り(正回転)の場合、図7に示すように右ガスノズル12aのみを噴射させることで、接触部11dの外側部分に付着した処理液を空間Rに吹き落とすように動作する。従って、基板1を薬液Aで液処理した場合、その排液は処理槽10の空間Rに集められて図3に示した右ドレイン17aにより排液される。
【0017】
その後、処理槽10では、図1及び2に示した処理液供給ノズル13による薬液Aの供給を止め、リンスノズル14により基板1の表面及び裏面に純水を供給してリンス(洗浄)処理を実行する。この際、図3に示した空間R、Lの右ドレイン17a及び左ドレイン17bを両方開いた状態にし、他の動作は前述した動作と同様にそのまま所定の間リンス処理を継続する。また、処理液供給ノズル13は、図2に示した薬液Aの供給を止めるとともに、純水の供給に切り替えてリンス処理の効率を向上させてもよい。
【0018】
次に、リンス処理が終了した後には、図8に示すように、基板1の回転を前述した100rpm〜300rpmの速度で逆回転(左回り)させることで薬液Bによる液処理を実行する。即ち、処理槽10内では、基板保持部11を右回りに回転させ、これにより基板1を左回り(逆回転)させる。また、処理槽10内では、第1仕切り板15を挟んで右側の空間Rに設けた右ドレイン17aを閉めるとともに、左側の空間Lに設けた左ドレイン17bを開き、処理液供給ノズル13から回転する基板1の表面に薬液Bを供給(図2参照)する。そして、ガスノズル12は、図9に示すように、基板1の左回りに対して左ガスノズル12bのみを噴射させることで、処理液を空間Lに向かって飛散させる。従って、処理槽10内では、逆回転時に薬液Bが空間Lに集められ、薬液Aを排出した空間Rには飛散しないため、薬液Aと薬液Bとが混合して化学反応してしまうことを防止できる。以上のように処理槽10では、基板1を薬液Bで液処理した後、排液は空間L底部の左ドレイン17bにより排液される。
【0019】
そして、薬液Bによる液処理が完了すると、最後に前述した薬液供給ノズル13及びリンスノズル14による純水のリンス処理を再び実行し、その後、純水の供給を止めて遠心力により乾燥させることで、この基板1を基板保持部11から外して次の工程に搬送する。以後、前述した動作を繰り返し行うことにより、複数の基板1を液処理する。
【0020】
このように本発明による基板処理装置の一実施形態によると、処理槽10内の底部を仕切った簡単な構造により、基板1を回転させる以外で処理液を排液分離する機構の駆動部分を槽内に設ける必要が無いため、処理槽10内での発塵を最大限に低減することが可能になる。
また、本発明による基板処理装置の一実施形態によると、前述したように処理液を排液分離する機構が処理槽10内の底部を仕切った単純な構造なため、排液分離機構にシーリング及び耐性などの複雑な条件を確保する必要が無く、部品のコストも十分に削減することが可能になる。
さらに、本発明による基板処理装置の一実施形態によると、処理槽10の内部を第1仕切り板15及び第2仕切り板16により仕切る簡単な構造のため、図11に示した従来技術のように基板周囲に処理液分離用の回収部材を設ける必要がなく、処理槽10全体を小型化することができる。
【0021】
ところで、図1に示した処理槽10では基板1のリンス後に付着した純水を遠心力により乾燥させる実施例を詳細に説明したが、これに限定されるものではなく、例えば、基板1に乾燥した空気を吹き付ける乾燥ノズル18を更に設けることも可能である。このように乾燥ノズル18を設けた処理槽の他の実施例は、図10に示すように、槽内にガスノズル12、処理液供給ノズル13、リンスノズル14を備え、更に、基板1の表裏各々の面に吹き付ける乾燥ノズル18を設けている。ここで、図10に示した処理槽20は、乾燥ノズル18以外は全て図1に示した処理槽と同様の構成要素であり、同じ構成には同一符号を記載するとともに、重複する説明は省略する。
【0022】
この乾燥ノズル18は、窒素、又は有機化合物の蒸気を含んだ窒素、或いは乾燥空気、又は有機化合物の蒸気を含んだ乾燥空気のいずれかを噴射可能に設けている。そして、乾燥ノズル18は、処理槽20の内部で基板1の中心から基板1の外周端へ走査できる機構を備えている。従って、この処理槽の他の実施例では、基板1の最終的なリンス処理後、乾燥ノズル18を基板1中心から基板1外端へ走査して敏速に表面を乾燥させることができる。
【0023】
このように処理槽の他の実施例によると、乾燥ノズル18以外は全て図1に示した処理槽と同じ構成要素であるため、図1に示した処理槽と同様の効果を得ることができるとともに、基板1のリンス処理後に乾燥ノズル18を走査して敏速に乾燥させることができ生産効率を向上することができる。
【0024】
以上、本発明による基板処理装置の実施の形態を詳細に説明したが、本発明は前述した実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で変更可能である。
例えば、薬液Aと薬液Bとの処理液を各々振り分ける実施例を詳細に説明したが、これに限定されるものではなく、単一の薬液のみで液処理する場合にこの薬液と純水とを振り分けることも可能である。
【0025】
【発明の効果】
このように本発明による基板処理装置によれば、処理槽内の基板底部を仕切った簡単な構造により、基板を回転させる以外で処理液を排液分離する機構の駆動部分を槽内に設ける必要が無いため、処理槽内での発塵を最大限に低減することが可能になる。
また、本発明による基板処理装置によれば、前述した処理液の排液分離機構が処理槽の底部を仕切った単純な構造であるため、この排液分離機構にシーリング及び耐性などの複雑な条件を確保する必要が無く、部品のコストも十分に削減することが可能になる。
さらに、本発明による基板処理装置によれば、処理槽の内部を第1仕切り板及び第2仕切り板により仕切る簡単な構造のため、処理槽内の基板周囲に処理液分離用の部材を設ける必要がなく、槽全体を小型化することができる。
【図面の簡単な説明】
【図1】本発明による基板処理装置の一実施形態を示す構成図。
【図2】図1に示した矢印C方向から見た状態を示す図。
【図3】図2に示したD―D線の断面を示す図。
【図4】図1に示した基板処理装置の正回転による動作を示す図。
【図5】図4に示したE―E線の断面を示す図。
【図6】図4に示したF―F線の断面を示す図。
【図7】図4に示した動作による処理液の流れを示す図。
【図8】図1に示した基板処理装置の逆回転による動作を示す図。
【図9】図8に示した動作による処理液の流れを示す図。
【図10】図1に示した処理槽の他の実施例を示す図。
【図11】従来の基板処理装置を示した構成図。
【符号の説明】
1 基板
10 処理槽
11 基板保持部
11a 回転モータ
11b 軸
11c 載置部
11d 接触部
12 ガスノズル
12a 右ガスノズル
12b 左ガスノズル
13 処理液供給ノズル
14 リンスノズル
15 第1仕切り板
16 第2仕切り板
17 ドレイン
17a 右ドレイン
17b 左ドレイン
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus. More specifically, for example, a substrate such as a semiconductor wafer, a glass for liquid crystal, a substrate for a hard disk, a photomask substrate, etc. is held and rotated in a hermetically sealed processing tank and processed on this surface. The present invention relates to a substrate processing apparatus for supplying (applying) a liquid to perform liquid processing.
[0002]
[Prior art]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-15402
Conventionally, as a substrate processing apparatus, for example, a semiconductor wafer, a glass for liquid crystal, a substrate for a hard disk, a photomask substrate, etc. are carried one by one into a sealed processing tank and rotated, and a desired liquid is applied to the surface. There is known a single-wafer type substrate processing apparatus (for example, refer to Patent Document 1) including a process of supplying a liquid and performing a drying process after a liquid process such as a cleaning process, an etching process, and a rinse process. FIG. 11 is a configuration diagram showing such a single-wafer type conventional substrate processing apparatus.
[0004]
As shown in FIG. 11, the conventional substrate processing apparatus includes a processing tank 30, a spin chuck 31 that holds the substrate 1 in the processing tank 30, a rotation motor 31 a that rotates the spin chuck 31, and the substrate 1. A nozzle 33 for supplying various processing liquids to the surface, a recovery member 35 having an inclined portion 35a for recovering the processing liquid scattered on the outer periphery of the substrate 1 as the substrate 1 rotates, and an inner bottom surface of the recovery member 35 A first discharge port 37a provided on the outside, a second discharge port 37b provided on the outer bottom surface of the recovery member 35, and an elevating mechanism 36 for raising and lowering the recovery member 35.
[0005]
The conventional substrate processing apparatus having such a configuration performs liquid processing by holding the substrate 1 on the spin chuck 31 and rotating it, supplying a predetermined processing liquid from the nozzle 33 to the surface, and applying it. At this time, the recovery member 35 is arranged in a first state (position of K1) in which the inclined portion 35a is located above the outer periphery of the spin chuck 31, and discharges the processing liquid from the first first discharge port 37a. . When the substrate 1 is subsequently subjected to liquid processing with another new processing liquid, it is necessary to prevent the first processing liquid and the next processing liquid from being mixed in the processing tank 30. Accordingly, the recovery member 35 is lowered to a second state (position K2) where the surface of the substrate 1 held by the spin chuck 31 is positioned above the inclined portion 35a, so that a new other processing liquid is first introduced. Can be distributed without being mixed with the treatment liquid and discharged from the second discharge port 37b.
[0006]
As described above, the conventional substrate processing apparatus, when processing the surface of the substrate 1 with a plurality of processing liquids in order, prevents the processing liquids from being mixed in the processing tank 30, so The liquid system (the 1st discharge port 37a and the 2nd discharge port 37b) was provided, and it formed in the structure which can raise / lower the collection | recovery member 35 with a process liquid, and can change a drainage system.
[0007]
[Problems to be solved by the invention]
However, in the conventional substrate processing apparatus, since it is necessary to provide a mechanical drive part provided with the elevating mechanism 36 in the collection member 35 that distributes different processing liquids in the processing tank 30, dust is generated from the driven part. There was a bug.
Further, in the conventional substrate processing apparatus, since the recovery member 35 is provided with the elevating mechanism 36 provided outside the processing tank 30 so as to penetrate the inside thereof, a sealing for sealing so as not to leak liquid from the through portion is always provided. It is necessary to ensure resistance to a high-concentration processing solution such as an alkali, and there is a problem that a complicated structure using many expensive parts is used.
Furthermore, in the conventional substrate processing apparatus, since it is necessary to provide the recovery member 35 for recovering the processing liquid around the spin chuck 31 in the processing tank 30, there is a problem that the processing tank 30 is enlarged in the lateral direction. .
The present invention solves such problems, and provides a substrate processing apparatus capable of reducing dust generation and liquid leakage by eliminating a driving part and a sealing part with a simple structure in a processing tank, and miniaturizing the entire apparatus. Objective.
[0008]
[Means for Solving the Problems]
In order to solve the above-described problems, a substrate processing apparatus according to the present invention includes a processing tank that performs liquid processing on a substrate that is an object to be processed with a processing liquid, and at least three vertical ends of the substrate in the processing tank. A substrate holder that is held (clamped) and rotated around the inner axis, a processing liquid supply nozzle that can supply different processing liquids to the surface of the substrate held by the substrate holder, and a lower portion of the substrate in the processing tank The first partition plate that extends radially from the center to the outside via the substrate holding portion, the second partition plate that further partitions each of the first partition plates, and the substrate toward the substrate holding portion that holds the substrate And a pair of gas nozzles that blow gas in both directions rotating in the forward and reverse directions, and changing the forward and reverse rotation directions of the substrate in accordance with different types of processing liquid in the processing tank, and the gas nozzles in each substrate holding part Spray Direction also by changing to suit the normal and reverse rotation is provided to the first partition plate with respect blow down distributes the kind of the processing solution to the left and right spaces.
[0009]
Here, it is preferable that the processing tank is provided with a drain that discharges the processing liquid that has been distributed and blown off by the injection of the gas nozzle, for each type that is distributed from the bottom. Moreover, it is preferable that the processing tank further includes a rinsing nozzle that supplies pure water to the front surface and the back surface of the substrate after the processing by the processing liquid supply nozzle. The treatment tank further includes a drying nozzle for blowing either nitrogen containing nitrogen or organic compound vapor, dry air, or dry air containing organic compound vapor on each surface of the substrate. In addition, a mechanism for scanning the drying nozzle from the center of the substrate to the outer peripheral edge of the substrate is preferably provided.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a configuration diagram showing an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a diagram showing a state seen from the direction of arrow C shown in FIG. FIG. 3 is a diagram showing a cross section taken along line DD shown in FIG. FIG. 4 is a diagram showing an operation of the substrate processing apparatus shown in FIG. 1 by forward rotation (clockwise). FIG. 5 is a view showing a cross section taken along line EE shown in FIG. FIG. 6 is a view showing a cross section taken along line FF shown in FIG. FIG. 7 is a diagram showing the flow of the processing liquid by the operation shown in FIG. FIG. 8 is a diagram showing an operation by reverse rotation (counterclockwise) of the substrate processing apparatus shown in FIG. FIG. 9 is a diagram showing the flow of the processing liquid by the operation shown in FIG. Moreover, FIG. 10 is a figure which shows the other Example of the processing tank shown in FIG.
[0011]
As shown in FIG. 1, one embodiment of a substrate processing apparatus according to the present invention seals a substrate 1 such as a semiconductor wafer, a glass for liquid crystal, a hard disk substrate, a photomask substrate, etc., as in the prior art shown in FIG. The processing tank 10 was carried one by one and rotated, and a desired processing solution was supplied to the surface of the substrate 1 to perform a drying process after a liquid process such as a cleaning process, an etching process, or a rinsing process. It is a single wafer type device.
Further, in the present embodiment, unlike the prior art shown in FIG. 11, a processing tank 10 for processing a substrate 1 as a processing object with a processing liquid, and an outer peripheral end of the substrate 1 in the processing tank 10. At least three or more (four in FIG. 1) substrate holding portions 11 that are held (sandwiched) around a vertical inner axis and rotated, and various treatments differing on the surface of the substrate 1 held by the substrate holding portions 11 A treatment liquid supply nozzle 13 capable of supplying a liquid; a first partition plate 15 extending radially from the center to the outside at a lower portion of the substrate 1 in the treatment tank 10 via the substrate holding portion 11; and the first partition plate And a pair of two gas nozzles 12 for blowing gas in both directions of forward and reverse rotation of the substrate 1 toward the substrate holding portion 11 holding the substrate 1. . That is, in the present embodiment, the forward / reverse rotation direction of the substrate 1 is changed according to different types of treatment liquid in the treatment tank 10, and the direction in which the gas nozzle 12 sprays each substrate holding unit 11 is also matched to the forward / reverse rotation. By changing the type of the treatment liquid, the types of the treatment liquid are distributed to the left and right spaces R and L with reference to the first partition plate 15 so as to be blown off (see FIGS. 7 and 9).
[0012]
Here, the processing tank 10 is sealed with a hollow inside a box-like shape, and the substrate 1 is provided in the sealed inside so that it can be loaded by opening and closing a side door that is not shown. . In the processing tank 10, the processing liquid supply nozzle 13, the gas nozzle 12, and the substrate holding unit 11 described above are provided, and pure water is supplied to the front surface and the back surface of the substrate 1 after the processing liquid supply nozzle 13 is processed to rinse. A rinse nozzle 14 is further provided. Then, as shown in FIG. 2, a treatment liquid such as a chemical liquid A, a chemical liquid B, or pure water is selectively supplied from the treatment liquid supply nozzle 13 to the substrate 1, and a gas such as nitrogen or dry air is supplied from the gas nozzle 12. Each is arranged so that it is ejected and pure water is supplied from the rinse nozzle 14. At this time, the gas nozzles 12 are arranged in pairs on both sides of the substrate holding unit 11 shown in FIG. 1, and a right gas nozzle that ejects gas toward the substrate holding unit 11 in the clockwise (forward rotation) direction of the substrate 1. 12a and a left gas nozzle 12b that ejects gas in the counterclockwise (reverse rotation) direction of the substrate 1 are provided to enable injection from both directions. Further, the substrate holding unit 11 includes a rotation motor 11a below the processing tank 10 shown in FIG. 2, and is rotatably supported by the rotation motor 11a so as to penetrate three or more into the processing tank 10. An existing shaft 11b, a mounting portion 11c that extends in a disc shape at the tip of the shaft 11b, and mounts the substrate 1, and a substrate 1 that has a small diameter perpendicular to the center of the mounting portion 11c in a cylindrical shape. A contact portion 11d that rotates by holding (holding) the outer periphery thereof around the axis.
[0013]
Further, for example, when four substrate holding portions 11 are provided, the processing tank 10 is provided with a first partition plate 15 extending diagonally from the center to the four corners inside the square as shown in FIG. The substrate holding portions 11 are provided between the center and the four corners of the partition plate 15, respectively. In this processing tank 10, the second partition plate 16 extends in a cross shape so as to partition the first partition plate 15, and a triangle is formed on the right side through the first partition plate 15 around the lower portion of the substrate holder 11. Space R and a triangular space L on the left side are respectively arranged on the left and right sides. Here, the embodiment in which the processing tank 10 is box-shaped inside and formed into a square has been described. However, the present invention is not limited thereto. For example, the first tank 15 and the first partition plate 15 that are cylindrical and radiate from the center in the bottom of the hollow. It is also possible to partition in a fan shape by the second partition plate 16. In the processing tank 10, either the right gas nozzle 12 a or the left gas nozzle 12 b shown in FIG. 1 is ejected according to the rotation direction, so that either the left or right of the processing liquid on the substrate 1 is partitioned by the first partition plate 15. It is possible to distribute and blow off the spaces R and L. Further, as shown in FIG. 3, the treatment tank 10 is provided with drains 17 for discharging the treatment liquid distributed and blown off by the gas nozzle 12 from the bottoms in the spaces R and L as shown in FIG. ing. That is, the drain 17 has a discharge path divided between the left drain 17a provided in the left space L with the first partition plate 15 interposed therebetween and the right drain 17b provided in the right space R, so that different types of processing liquids are provided. We discharge so as not to mix.
[0014]
When the substrate 1 is processed with the processing liquids of the chemical liquid A and the chemical liquid B using the embodiment of the substrate processing apparatus according to the present invention formed as described above, the substrate 1 is first held as shown in FIG. The substrate 1 is rotated by being held by the contact portion 11d of the portion 11 and rotating the substrate holding portion 11 by the rotation motor 11a (see FIG. 2). In FIG. 4, the substrate holding part 11 is rotated counterclockwise, and at this time, the substrate 1 is rotated clockwise (forward rotation). Further, in the processing tank 10, the left drain 17b provided in the left space L with the first partition plate 15 interposed therebetween is closed, and the right drain 17a provided in the right space R is opened, and the processing liquid supply nozzle 13 (FIG. 2), an appropriate amount of the chemical solution A is supplied to the surface of the rotating substrate 1.
[0015]
Here, in the present embodiment, the substrate holder 11 rotates the substrate 1 at 100 rpm to 300 rpm. In this case, as shown in FIG. 5, on the surface where the outer peripheral edge of the substrate 1 is not in contact with the substrate holder 11, the chemical solution A stays on the substrate 1 due to the surface tension of the processing liquid and does not scatter from the outer peripheral edge. To maintain. On the other hand, when the outer peripheral edge of the substrate 1 is in contact with the contact part 11d of the substrate holding part 11, the processing liquid on the substrate 1 is attracted to the contact part 11d of the substrate holding part 11 as shown in FIG. It will be in the state. In such a state, by setting the diameter I of the contact portion 11d shown in FIG. 6 to be smaller than the diameter J of the substrate 1, and increasing the centrifugal force (rotational speed) of the contact portion 11d with respect to the substrate 1, The processing liquid can be scattered in the direction of the arrow H shown in FIG. However, if the diameter I of the contact portion 11d is extremely small, it becomes difficult to rotate the substrate 1 at a predetermined speed, and therefore setting the diameter ratio between the substrate 1 and the contact portion 11d becomes important.
[0016]
Here, it has been found that it is most preferable that the diameter I of the contact portion 11d is about 1/10 of the diameter J of the substrate 1 and the rotational speed of the contact portion 11d is 10 times that of the substrate 1. That is, the centrifugal force at the outer peripheral end of the contact portion 11d is most preferably about 10 times the centrifugal force at the outer peripheral end of the substrate 1. Further, in the contact portion 11d of the substrate holding portion 11 under such conditions, as shown in FIG. 4, the processing liquid adhered to the outer portion (outer portion not in contact with the substrate 1) far from the center of the processing bath 10. As a result, nitrogen or dry air is blown from the gas nozzle 12 so that the processing liquid is scattered in the direction of the arrow G so that it does not fly to the space L side of the processing tank 10. That is, when the substrate 1 is rotating clockwise (forward rotation), the gas nozzle 12 sprays only the right gas nozzle 12a as shown in FIG. 7, thereby blowing the processing liquid adhering to the outer portion of the contact portion 11d into the space R. Operates to drop. Therefore, when the substrate 1 is liquid-treated with the chemical solution A, the drainage is collected in the space R of the processing tank 10 and drained by the right drain 17a shown in FIG.
[0017]
Thereafter, in the treatment tank 10, the supply of the chemical liquid A by the treatment liquid supply nozzle 13 shown in FIGS. 1 and 2 is stopped, and the rinse nozzle 14 supplies pure water to the front surface and the back surface of the substrate 1 to perform a rinsing (cleaning) process. Execute. At this time, the right drain 17a and the left drain 17b of the spaces R and L shown in FIG. 3 are both opened, and the rinsing process is continued for a predetermined period of time as in the above-described operation. Further, the processing liquid supply nozzle 13 may stop the supply of the chemical liquid A shown in FIG. 2 and may switch to the supply of pure water to improve the efficiency of the rinsing process.
[0018]
Next, after the rinsing process is completed, as shown in FIG. 8, the liquid process using the chemical solution B is performed by rotating the substrate 1 in the reverse direction (counterclockwise) at a speed of 100 rpm to 300 rpm. That is, in the processing tank 10, the substrate holding part 11 is rotated clockwise, and thereby the substrate 1 is rotated counterclockwise (reversely rotated). Further, in the processing tank 10, the right drain 17 a provided in the right space R with the first partition plate 15 interposed therebetween is closed, and the left drain 17 b provided in the left space L is opened and rotated from the processing liquid supply nozzle 13. The chemical solution B is supplied to the surface of the substrate 1 to be performed (see FIG. 2). Then, as shown in FIG. 9, the gas nozzle 12 scatters the processing liquid toward the space L by ejecting only the left gas nozzle 12 b toward the counterclockwise direction of the substrate 1. Therefore, in the processing tank 10, the chemical solution B is collected in the space L during reverse rotation and does not scatter in the space R from which the chemical solution A is discharged. Therefore, the chemical solution A and the chemical solution B are mixed and chemically reacted. Can be prevented. As described above, in the processing tank 10, after the substrate 1 is liquid-treated with the chemical solution B, the drainage is drained by the left drain 17 b at the bottom of the space L.
[0019]
Then, when the liquid treatment with the chemical solution B is completed, the pure water rinse treatment with the chemical solution supply nozzle 13 and the rinse nozzle 14 described above is finally performed, and then the supply of pure water is stopped and dried by centrifugal force. Then, the substrate 1 is removed from the substrate holder 11 and transferred to the next step. Thereafter, the plurality of substrates 1 are liquid-treated by repeating the above-described operation.
[0020]
As described above, according to an embodiment of the substrate processing apparatus of the present invention, the driving part of the mechanism for draining and separating the processing liquid other than rotating the substrate 1 by the simple structure in which the bottom of the processing tank 10 is partitioned is provided in the tank. Since it is not necessary to provide inside, the dust generation in the processing tank 10 can be reduced to the maximum.
In addition, according to one embodiment of the substrate processing apparatus of the present invention, since the mechanism for draining and separating the processing liquid has a simple structure in which the bottom of the processing tank 10 is partitioned as described above, the draining and separating mechanism is sealed and sealed. It is not necessary to ensure complicated conditions such as durability, and the cost of parts can be sufficiently reduced.
Furthermore, according to one embodiment of the substrate processing apparatus according to the present invention, because of the simple structure in which the inside of the processing tank 10 is partitioned by the first partition plate 15 and the second partition plate 16, as in the prior art shown in FIG. There is no need to provide a recovery member for separating the processing liquid around the substrate, and the entire processing tank 10 can be downsized.
[0021]
Incidentally, in the processing tank 10 shown in FIG. 1, the embodiment in which the pure water adhered after rinsing the substrate 1 is dried by centrifugal force has been described in detail. However, the present invention is not limited to this. It is also possible to further provide a drying nozzle 18 for blowing the air. As shown in FIG. 10, another embodiment of the processing tank provided with the drying nozzle 18 as described above includes a gas nozzle 12, a processing liquid supply nozzle 13, and a rinse nozzle 14 in the tank. A drying nozzle 18 for spraying on the surface is provided. Here, the processing tank 20 shown in FIG. 10 is the same component as the processing tank shown in FIG. 1 except for the drying nozzle 18, and the same components are denoted by the same reference numerals and redundant description is omitted. To do.
[0022]
The drying nozzle 18 is provided so that either nitrogen or nitrogen containing an organic compound vapor, or dry air or dry air containing an organic compound vapor can be injected. The drying nozzle 18 includes a mechanism capable of scanning from the center of the substrate 1 to the outer peripheral end of the substrate 1 inside the processing tank 20. Therefore, in another embodiment of the processing tank, after the final rinsing process of the substrate 1, the surface of the substrate 1 can be quickly dried by scanning the drying nozzle 18 from the center of the substrate 1 to the outer end of the substrate 1.
[0023]
Thus, according to the other Example of a processing tank, since all are the same components as the processing tank shown in FIG. 1 except the drying nozzle 18, the effect similar to the processing tank shown in FIG. 1 can be acquired. At the same time, after the rinsing process of the substrate 1, the drying nozzle 18 can be scanned and dried quickly, so that the production efficiency can be improved.
[0024]
As mentioned above, although the embodiment of the substrate processing apparatus according to the present invention has been described in detail, the present invention is not limited to the above-described embodiment, and can be changed without departing from the gist thereof.
For example, although the example which distributes the process liquid of the chemical | medical solution A and the chemical | medical solution B each was demonstrated in detail, when performing liquid processing only with a single chemical | medical solution, it is not limited to this, This chemical | medical solution and pure water are used. It is also possible to distribute them.
[0025]
【The invention's effect】
As described above, according to the substrate processing apparatus of the present invention, it is necessary to provide a driving part of the mechanism for draining and separating the processing liquid in addition to rotating the substrate by a simple structure in which the bottom of the substrate in the processing tank is partitioned. Therefore, it is possible to reduce dust generation in the treatment tank to the maximum.
In addition, according to the substrate processing apparatus of the present invention, the above-described processing liquid drain separation mechanism has a simple structure in which the bottom of the processing tank is partitioned, so that the drain separation mechanism has complicated conditions such as sealing and resistance. Therefore, it is possible to sufficiently reduce the cost of parts.
Furthermore, according to the substrate processing apparatus of the present invention, it is necessary to provide a processing liquid separating member around the substrate in the processing tank because of the simple structure in which the inside of the processing tank is partitioned by the first partition plate and the second partition plate. There is no, and the whole tank can be reduced in size.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an embodiment of a substrate processing apparatus according to the present invention.
FIG. 2 is a diagram showing a state viewed from the direction of arrow C shown in FIG.
FIG. 3 is a view showing a cross section taken along line DD shown in FIG. 2;
4 is a diagram showing an operation of the substrate processing apparatus shown in FIG. 1 by forward rotation.
FIG. 5 is a view showing a cross section taken along line EE shown in FIG. 4;
6 is a cross-sectional view taken along line FF shown in FIG.
7 is a view showing a flow of a processing liquid by the operation shown in FIG. 4;
FIG. 8 is a view showing an operation by reverse rotation of the substrate processing apparatus shown in FIG. 1;
FIG. 9 is a view showing a flow of processing liquid by the operation shown in FIG. 8;
FIG. 10 is a view showing another embodiment of the treatment tank shown in FIG.
FIG. 11 is a configuration diagram showing a conventional substrate processing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate 10 Processing tank 11 Substrate holding part 11a Rotating motor 11b Shaft 11c Placement part 11d Contact part 12 Gas nozzle 12a Right gas nozzle 12b Left gas nozzle 13 Treatment liquid supply nozzle 14 Rinse nozzle 15 First partition plate 16 Second partition plate 17 Drain 17a Right drain 17b Left drain

Claims (4)

被処理物である基板を処理液により液処理する処理槽と、
前記処理槽内で前記基板の外周端を少なくとも3つ以上の鉛直した内側の軸周りに保持(挟持)して回転させる基板保持部と、
前記基板保持部に保持した前記基板の表面に異なる種々の処理液を供給できる処理液供給ノズルと、
前記処理槽内の前記基板下部で中心から外側に前記基板保持部を介して放射状に延在して仕切る第1仕切り板と、
前記第1仕切り板の間を更に各々仕切る第2仕切り板と、
前記基板を保持した前記基板保持部に向けて前記基板の正逆回転する両方向で各々ガスを吹き付ける2本一対のガスノズルとを備え、
前記処理槽内で前記処理液の異なる種類に応じて前記基板の正逆の回転方向を変えるとともに、前記ガスノズルが前記各基板保持部に吹き付ける方向も前記正逆回転に合わせて変えることで、前記第1仕切り板を基準にして左右の空間に前記処理液の種類を振り分けて吹き落とすように設けたことを特徴とする基板処理装置。
A treatment tank for treating a substrate to be treated with a treatment liquid;
A substrate holding unit for rotating (holding) and rotating the outer peripheral edge of the substrate around at least three vertical inner axes in the processing tank;
A treatment liquid supply nozzle capable of supplying various different treatment liquids to the surface of the substrate held by the substrate holding unit;
A first partition plate extending radially from the center to the outside at the lower part of the substrate in the processing tank via the substrate holding part;
A second partition plate further partitioning each of the first partition plates;
A pair of gas nozzles each blowing gas in both directions of forward and reverse rotation of the substrate toward the substrate holding portion holding the substrate;
By changing the direction of forward and reverse rotation of the substrate according to different types of the processing liquid in the processing tank, and also changing the direction in which the gas nozzle sprays each substrate holding part in accordance with the forward and reverse rotation, A substrate processing apparatus, wherein a type of the processing liquid is distributed and blown off in left and right spaces with reference to the first partition plate.
請求項1に記載の基板処理装置において、
前記処理槽は、前記ガスノズルの噴射により振り分けて吹き落とした前記処理液を底部から振り分けた種類毎に各々排出するドレインを設けたことを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the processing tank is provided with a drain for discharging each processing liquid distributed and blown off from the bottom by the gas nozzle.
請求項1または2に記載の基板処理装置において、
前記処理槽は、前記処理液供給ノズルの処理後に前記基板の表面および裏面に純水を供給してリンスするリンスノズルを更に設けたことを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1 or 2,
The substrate processing apparatus, wherein the processing tank is further provided with a rinsing nozzle for supplying pure water to the front and back surfaces of the substrate after the processing of the processing liquid supply nozzle.
請求項1乃至3のいずれかに記載の基板処理装置において、前記処理槽は、窒素、又は有機化合物の蒸気を含んだ窒素、或いは乾燥空気、又は有機化合物の蒸気を含んだ乾燥空気のいずれかを前記基板の表裏各々の面に吹き付ける乾燥ノズルを更に備え、且つ、その乾燥ノズルを基板中心から基板外周端へ走査する機構を備えたことを特徴とする基板処理装置。4. The substrate processing apparatus according to claim 1, wherein the processing tank is either nitrogen, nitrogen containing an organic compound vapor, dry air, or dry air containing an organic compound vapor. 5. A substrate processing apparatus, further comprising: a drying nozzle that sprays the substrate to the front and back surfaces of the substrate, and a mechanism for scanning the drying nozzle from the center of the substrate to the outer peripheral edge of the substrate.
JP2003194362A 2003-07-09 2003-07-09 Substrate treatment equipment Pending JP2005032869A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103730334A (en) * 2012-10-11 2014-04-16 沈阳芯源微电子设备有限公司 Chemical solution recycling device suitable for square substrate
CN110890292A (en) * 2018-09-07 2020-03-17 芝浦机械电子装置股份有限公司 Substrate processing apparatus and substrate processing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103730334A (en) * 2012-10-11 2014-04-16 沈阳芯源微电子设备有限公司 Chemical solution recycling device suitable for square substrate
CN110890292A (en) * 2018-09-07 2020-03-17 芝浦机械电子装置股份有限公司 Substrate processing apparatus and substrate processing method
JP2020043158A (en) * 2018-09-07 2020-03-19 芝浦メカトロニクス株式会社 Substrate processing apparatus and substrate processing method
JP7027284B2 (en) 2018-09-07 2022-03-01 芝浦メカトロニクス株式会社 Board processing equipment and board processing method
CN110890292B (en) * 2018-09-07 2023-11-17 芝浦机械电子装置股份有限公司 Substrate processing apparatus and substrate processing method

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