JP2010171229A - Method of cleaning substrate treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To efficiently clean the inside of a chamber of a substrate treatment device, for instance, a spin type wet etching treatment device. <P>SOLUTION: In this method of cleaning a substrate treatment device, the inside of a chamber (500) is cleaned by a cleaning liquid sprayed from a blocking plate by discharging the cleaning liquid to the blocking plate from a cleaning liquid supply means (70) arranged above the blocking plate while rotating the blocking plate (30). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a technical field of a cleaning method for a substrate processing apparatus such as a spin-type wet etching processing apparatus.

  As an example of this type of substrate processing apparatus, a wet etching process is performed by supplying a chemical solution or pure water to a substrate to be processed while rotating the substrate to be processed such as a semiconductor substrate or a liquid crystal panel substrate in a chamber. 2. Description of the Related Art Spin type (or single wafer type) wet etching processing apparatuses that perform cleaning processing (that is, rinsing processing) are known (see, for example, Patent Documents 1 to 3). In such a substrate processing apparatus, in order to collect chemicals and pure water scattered by the rotation of the substrate to be processed when wet etching processing and cleaning processing are performed, the substrate processing apparatus is arranged on the stage side on which the substrate to be processed is placed. An opened annular multi-stage cup may be provided (see, for example, Patent Document 3). Further, in such a substrate processing apparatus, in general, it is possible to prevent the pure water supplied to the substrate to be processed from being splashed and scattered on the substrate surface when the cleaning process is performed ( That is, a blocking plate is provided mainly for the purpose of preventing liquid splash during the rinsing process. The blocking plate is provided above the stage and is configured to be able to move up and down and rotate. In the cleaning process, the blocking plate is disposed close to the stage so as to cover the substrate to be processed on the stage, and is rotated according to the rotation of the stage.

JP 2002-170804 A Japanese Patent Laid-Open No. 11-102884 JP 2008-129378 A

  In the substrate processing apparatus as described above, the chemical liquid scattered by the rotation of the substrate to be processed when the wet etching process is performed adheres to the inner wall and the multi-stage cup of the chamber. When the chemical solution adhering to the inner wall of the chamber or the multistage cup is dried and crystallized, it becomes particles and the inside of the chamber is contaminated. For this reason, it is necessary to clean the inside of the chamber and remove the chemical solution adhering to the inner wall of the chamber or the multistage cup. However, since the above-described substrate processing apparatus is generally not equipped with a cleaning function for cleaning the inside of the chamber, cleaning by, for example, hand shower or water wiping is performed as cleaning inside the chamber. For this reason, there is a technical problem that it is difficult to efficiently clean the inside of the chamber.

  The present invention has been made in view of the above-described problems, for example, and an object of the present invention is to provide a substrate processing apparatus cleaning method capable of efficiently cleaning the inside of the chamber.

  In order to solve the above problems, a cleaning method for a substrate processing apparatus according to the present invention includes a stage in which a substrate to be processed is placed in a chamber and is configured to be rotatable, and a stage that is provided above the stage and is A blocking plate configured to be movable and rotatable, and processing the substrate to be processed by supplying a processing liquid to the substrate to be processed while rotating the substrate by rotating the stage. A substrate processing apparatus cleaning method for cleaning a substrate processing apparatus, wherein the cleaning liquid is discharged from a cleaning liquid supply means provided above the shielding plate while rotating the shielding plate, A cleaning step of cleaning the inside of the chamber with a cleaning liquid scattered from the blocking plate;

  In the present invention, the substrate processing apparatus is, for example, a spin-type (single-wafer type) wet etching processing apparatus, and the like. The stage is provided in the chamber above the stage, and is configured to be vertically movable and rotatable. A barrier plate. At the time of the processing, the substrate processing apparatus processes the substrate to be processed by supplying a processing liquid (for example, a chemical solution or pure water) to the substrate to be processed while rotating the substrate to be processed by rotating the stage (for example, Wet etching treatment, rinsing treatment, etc.). When the rinsing process for supplying pure water as a processing liquid to the substrate to be processed is performed, the blocking plate causes the pure water supplied to the substrate to be processed to splash and scatter on the substrate surface of the substrate to be processed. (That is, preventing splashing of liquid during the rinsing process). The blocking plate can also be called a “shielding plate”, “liquid splash prevention plate”, “scattering prevention plate”, or the like.

  In the present invention, in particular, in the cleaning step, the blocking plate is rotated by discharging cleaning liquid such as pure water from the cleaning liquid supply means such as nozzle provided above the blocking plate while rotating the blocking plate. The inside of the chamber is cleaned with a cleaning liquid scattered from the plate. That is, in the cleaning process, cleaning water such as pure water is supplied to the rotating blocking plate from above, so that the cleaning water can be scattered around the blocking plate and the inside of the chamber can be cleaned. (In other words, for example, the processing liquid (or crystallized one) adhering to the inner wall of the chamber or a member (for example, a multi-stage cup) provided in the chamber can be removed). According to such a cleaning method according to the present invention, for example, in a general spin-type wet etching apparatus, the inside of a chamber can be cleaned using a generally provided blocking plate. Therefore, it is also possible to automate the cleaning of the chamber, and tentatively reduce the number of people and time required for cleaning the chamber as compared with the case of cleaning the chamber by hand shower or water wiping, for example. (That is, the efficiency of cleaning in the chamber can be improved). Furthermore, by automating the cleaning of the chamber, it becomes possible to clean the chamber easily and periodically with a relatively short cycle. Therefore, even when a chemical solution that is easily crystallized is used as the processing solution, the chemical solution The generation of particles due to crystallization of can be reliably suppressed or prevented.

  As described above, according to the substrate processing apparatus cleaning method of the present invention, the inside of a chamber of a substrate processing apparatus such as a spin-type wet etching processing apparatus can be efficiently cleaned.

  In one aspect of the method for cleaning a substrate processing apparatus according to the present invention, the cleaning step includes a chamber cleaning step of cleaning an inner wall of the chamber with a cleaning liquid scattered from the blocking plate.

  According to this aspect, for example, the blocking plate is moved up and down in accordance with the position of the portion to be cleaned on the inner wall of the chamber to clean the inner wall of the chamber. That is, by adjusting the vertical position of the shielding plate so that the cleaning liquid scattered by the rotating shielding plate hits the chemical solution (or the crystallized one) attached to the inner side wall of the chamber, Wash the wall. Therefore, it can suppress or prevent that the chemical | medical solution adhering to the inner side wall of a chamber crystallizes and it becomes a particle and the inside of a chamber is contaminated.

In another aspect of the method for cleaning a substrate processing apparatus according to the present invention, the substrate processing apparatus includes a plurality of annular members formed in an annular shape so as to surround the stage in the chamber. A treatment liquid recovery cup having a configuration arranged so as to be stacked apart from each other,
The cleaning step includes a treatment liquid recovery cup cleaning step of cleaning the plurality of annular members with a cleaning liquid scattered from the blocking plate.

  According to this aspect, for example, the one annular member is moved up and down according to the position of one annular member to be cleaned among the plurality of annular members of the treatment liquid recovery cup such as a multistage cup. Wash. Such cleaning is repeated for all the other annular members. That is, by adjusting the vertical position of the blocking plate so that the cleaning liquid scattered by the rotating blocking plate hits the chemical solution (or the crystallized one) attached to the annular member of the treatment liquid recovery cup, For example, the annular member of the treatment liquid recovery cup such as a multi-stage cup is washed. Therefore, it can suppress or prevent that the chemical | medical solution adhering to the annular member of a process liquid collection | recovery cup crystallizes and becomes a particle and the inside of a chamber is contaminated.

  In the aspect in which the cleaning process described above includes the process liquid recovery cup cleaning process, the process liquid recovery cup cleaning process may sequentially clean the plurality of annular members one by one by moving the blocking plate up and down. Good.

  In this case, for example, all of the plurality of annular members of the treatment liquid recovery cup such as a multi-stage cup can be reliably washed.

  In an aspect in which the above-described cleaning step includes a processing liquid recovery cup cleaning step, the processing liquid recovery cup cleaning step includes cleaning the plurality of annular members with a cleaning liquid splashed from the blocking plate, By moving the blocking plate so that the interval with the stage is a predetermined interval, and supplying dry gas from at least one of the center of the blocking plate and the center of the stage between the blocking plate and the stage A drying step of drying the plurality of annular members may be included.

  In this case, the cleaning liquid remaining in the processing liquid recovery cup can be reduced or prevented by the drying process. Therefore, when the substrate to be processed is processed later by the substrate processing apparatus, it is possible to avoid a situation in which the cleaning liquid remaining in the processing liquid recovery cup is mixed into the chemical liquid.

  In an aspect in which the cleaning process includes a process liquid recovery cup cleaning process, the substrate processing apparatus includes a process liquid recovery tank and a waste liquid recovery tank provided for each of the plurality of process liquid guides. Switching means for selectively communicating one of the processing liquid recovery tank and the waste liquid recovery tank with each of the plurality of processing liquid guide sections, and the cleaning step includes the processing liquid guide section and the waste liquid recovery section. The switching means is controlled so as to communicate with the tank.

  In this case, it is possible to prevent the cleaning liquid from entering the processing liquid recovery tank. Therefore, it is possible to prevent the cleaning liquid from being mixed with the processing liquid such as the chemical liquid in the processing liquid recovery tank recovered by the processing liquid recovery cup.

  The operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

It is sectional drawing which shows typically schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a flowchart which shows the flow of the washing | cleaning method of the substrate processing apparatus which concerns on 1st Embodiment. It is a schematic diagram for demonstrating the washing | cleaning method of the substrate processing apparatus which concerns on 1st Embodiment. It is a flowchart which shows the flow of the washing | cleaning method of the substrate processing apparatus which concerns on 2nd Embodiment. It is a schematic diagram for demonstrating the washing | cleaning method of the substrate processing apparatus which concerns on 2nd Embodiment. It is a schematic diagram for demonstrating the drying process in 2nd Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>
The substrate processing apparatus cleaning method according to the first embodiment will be described with reference to FIGS.

  First, the configuration of a substrate processing apparatus to be cleaned by the substrate processing apparatus cleaning method according to the present embodiment will be described with reference to FIG.

  FIG. 1 is a cross-sectional view schematically showing a schematic configuration of a substrate processing apparatus according to the present embodiment. In FIG. 1, each member has a different scale so that each member has a size that can be recognized on the drawing.

  In FIG. 1, a substrate processing apparatus 1 according to the present embodiment is a spin type (single-wafer type) wet etching processing apparatus. For example, a wet etching process is performed on a target substrate such as a semiconductor substrate or a liquid crystal panel substrate. And rinse treatment. When performing a wet etching process on a substrate to be processed, the substrate processing apparatus 1 rotates a stage 10 to be described later, thereby rotating the substrate to be processed placed on the stage 10 to the substrate to be processed. In contrast, a chemical solution is supplied from a nozzle 20 described later. When rinsing the substrate to be processed, the substrate processing apparatus 1 rotates the stage 10 to be described later, thereby rotating the substrate to be processed placed on the stage 10 to the substrate to be processed. On the other hand, pure water is supplied from a nozzle 60 described later.

  The substrate processing apparatus 1 includes a stage 10, a nozzle 20, a blocking plate 30, a nozzle 50, a nozzle 60, a multistage cup 40, and a nozzle 70 in a chamber 500.

  The stage 10 is a disk-like stage on which a substrate to be processed is placed, and is configured to be rotatable about a vertical axis as a central axis. The stage 10 is rotationally driven by a rotational driving means such as a motor (not shown).

  The nozzle 20 is a nozzle for supplying, for example, a chemical solution that functions as an etching solution (etchant) or the like to the substrate to be processed placed on the stage 10. Examples of the chemical liquid include hydrofluoric acid, dilute hydrofluoric acid, mixed acid (hydrofluoric nitric acid) that is a mixed liquid of hydrofluoric acid and nitric acid, and potassium hydroxide. The nozzle 20 is connected to a chemical solution supply unit 21 including a chemical solution storage tank that stores the chemical solution. During the wet etching process performed by the substrate processing apparatus 1, the chemical solution stored in the chemical solution supply unit 21 is supplied from the nozzle 20 to the substrate to be processed placed on the stage 10. The nozzle 20 is configured to be movable in the horizontal direction.

  The blocking plate 30 is a disk-like member provided above the stage 10 so as to face the stage 10. The blocking plate 30 is configured to be movable up and down in the vertical direction and rotatable about the vertical axis. When the rinsing process is performed, the blocking plate 30 prevents pure water supplied from a nozzle 60 (described later) from splashing and scattering on the substrate surface of the substrate to be processed (that is, rinsing). The main purpose is to prevent liquid splashing during the treatment. During the rinsing process by the substrate processing apparatus 1, the blocking plate 30 is disposed close to the substrate to be processed and is driven to rotate according to the rotation of the stage 10.

  The nozzle 60 is a nozzle for supplying pure water to the substrate to be processed placed on the stage 10 when the rinsing process is performed. The nozzle 60 is connected to a pure water supply unit 61 including a pure water storage tank that stores pure water. During the rinsing process by the substrate processing apparatus 1, the pure water stored in the pure water supply unit 61 is supplied from the nozzle 60 to the substrate to be processed placed on the stage 10. The nozzle 70 has a jet outlet at the center of the blocking plate 30 so as to face the stage 10.

  The nozzle 50 is a nozzle for supplying a dry gas such as nitrogen gas into the chamber 500. The nozzle 50 is connected to a dry gas supply unit 51 including a dry gas storage tank for storing the dry gas. An outlet of the nozzle 50 is provided in the center of the blocking plate 30 so as to face the stage 10.

  The multi-stage cup 40 is an example of the “processing liquid recovery cup” according to the present invention, and a chemical solution or pure water scattered by the rotation of the substrate to be processed when the substrate processing apparatus 1 performs the wet etching process or the rinsing process. This is a recovery cup for recovery. In the multi-stage cup 40, a plurality of annular members 41 (that is, annular members 41a, 41b, 41c and 41d) formed in an annular shape so as to surround the stage 10 are arranged in the vertical direction, and the processing liquid guide part 42 (that is, the processing liquid). The guide portions 42a, 42b and 42c) are arranged so as to be stacked with a space therebetween.

  The treatment liquid guide 42a is a cavity formed between the annular members 41a and 41b, the treatment liquid guide 42b is a cavity formed between the annular members 41b and 41c, and the treatment liquid guide 42c is A cavity formed between the annular members 41c and 41d. The processing liquid guide part 42a communicates with the chemical solution recovery path 81a, the processing liquid guide part 42b communicates with the chemical liquid recovery path 81b, and the processing liquid guide part 42c communicates with the chemical liquid recovery path 81c. . The chemical solution recovery paths 81a, 81b, and 81c communicate with the chemical solution recovery tanks 80a, 80b, and 80c, respectively. During the wet etching process by the substrate processing apparatus 1, the chemical solutions guided from the chemical solution recovery paths 81a, 81b, and 81c are stored in the chemical solution recovery tanks 80a, 80b, and 80c, respectively.

  The chemical solution recovery path 81a is connected to the waste liquid recovery path 91a via a switching valve 100a provided in the middle thereof. The chemical solution recovery path 81b is connected to the waste liquid recovery path 91b via a switching valve 100b provided in the middle thereof. The chemical solution recovery path 81c is connected to the waste liquid recovery path 91c via a switching valve 100c provided in the middle thereof. The switching valves 100a, 100b and 100c are examples of the “switching means” according to the present invention.

  The switching valve 100a is a valve that selectively connects one of the processing liquid recovery tank 80a and the waste liquid recovery tank 90a to the processing liquid guide 42a, and the switching valve 100b is connected to the processing liquid guide tank 42b and the processing liquid recovery tank 80b. The switching valve 100c is a valve that selectively communicates one of the processing liquid recovery tank 80c and the waste liquid recovery tank 90c with the processing liquid guide 42c.

  The multi-stage cup 40 is configured to be movable up and down in the chamber 500. Specifically, the multi-stage cup 40 is fixed to a vertical movement stage 44 of a single-axis drive mechanism 43 configured by a servo motor or the like that is provided in the chamber 500 and is movable in the vertical direction. The multistage cup 40 is driven in the vertical direction by the single-axis drive mechanism 43 in the chamber 500.

  The nozzle 70 is an example of the “cleaning water supply unit” according to the present invention, and is provided above the blocking plate 30. The nozzle 70 is connected to a pure water supply unit 71 including a pure water storage tank that stores pure water as an example of “washing water” according to the present invention. The nozzle 70 is configured to be able to discharge pure water from above the blocking plate 30 to the upper surface of the blocking plate 30. The nozzle 70 is configured to be movable in the horizontal direction.

  Next, a cleaning method for the substrate processing apparatus according to the present embodiment for cleaning the substrate processing apparatus 1 configured as described above will be described with reference to FIGS. In the present embodiment, a case where the inner wall of the chamber 500 of the substrate processing apparatus 1 is cleaned will be described as an example.

  FIG. 2 is a flowchart showing the flow of the cleaning method of the substrate processing apparatus according to the present embodiment. FIG. 3 is a schematic view for explaining a cleaning method of the substrate processing apparatus according to the present embodiment.

  In FIG. 2, first, the blocking plate 30 is started to rotate (step S110).

  Next, pure water is discharged from the nozzle 70 to the rotating blocking plate 30 (step S120). Thereby, as shown in FIG. 3, the pure water supplied from the nozzle 70 to the blocking plate 30 can be scattered around by the rotating blocking plate 30. Here, the pure water supplied from the nozzle 70 to the blocking plate 30 is first scattered from the nozzle 70 toward the upper surface of the blocking plate 30 as indicated by the arrow P1, and as shown by the arrow P2 due to the rotation of the blocking plate 30. Then, it goes to the inner wall 500 a of the chamber 500. Therefore, the chemical liquid (or crystallized liquid) 700 attached to the inner wall 500a of the chamber 500 can be removed by pure water scattered by the rotating blocking plate 30. That is, the inner wall 500a of the chamber 500 can be washed with pure water scattered by the rotating blocking plate 30.

  Next, the blocking plate 30 is moved up and down (step S130). That is, the blocking plate 30 is moved up and down according to the position of the portion to be cleaned on the inner wall 500 a of the chamber 500. Thereby, the inner wall 500a of the chamber 500 can be more reliably cleaned with the pure water scattered by the rotating blocking plate 30.

  Thus, according to the cleaning method of the substrate processing apparatus according to the present embodiment, pure water as the cleaning liquid is supplied to the blocking plate 30 from the nozzle 70 provided above the blocking plate 30 while rotating the blocking plate 30. Therefore, the inside of the chamber 500 can be washed with pure water scattered from the blocking plate 30 (that is, the chemical solution 700 attached to the inner wall 500a of the chamber 500 can be removed). Therefore, it is possible to automate the cleaning of the chamber 500. Temporarily, the number of people and time required for cleaning the chamber 500 as compared with the case where the chamber 500 is cleaned by hand shower or water wiping, for example. Can be saved (that is, the cleaning of the chamber 500 can be made more efficient). Further, by automating the cleaning of the chamber 500, the chamber 500 can be easily cleaned periodically at a relatively short period. Therefore, a chemical solution that is easily crystallized is used as the chemical solution supplied from the nozzle 20. Even in the case where the chemical liquid is present, the generation of particles due to the crystallization of the chemical liquid can be reliably suppressed.

  As described above, according to the cleaning method for a substrate processing apparatus according to this embodiment, the inside of the chamber 500 of the substrate processing apparatus 1 can be efficiently cleaned.

<Second Embodiment>
A substrate processing apparatus cleaning method according to the second embodiment will be described with reference to FIGS. The substrate processing apparatus to be cleaned by the cleaning method of the substrate processing apparatus according to the present embodiment is the substrate processing apparatus 1 as in the first embodiment described above. In the present embodiment, a case where the multi-stage cup 40 of the substrate processing apparatus 1 is cleaned will be described as an example.

  FIG. 4 is a flowchart showing the flow of the cleaning method of the substrate processing apparatus according to the second embodiment. FIG. 5 is a schematic diagram for explaining a cleaning method of the substrate processing apparatus according to the second embodiment. FIG. 6 is a schematic diagram for explaining a drying process in the second embodiment.

  5 and 4, first, the switching valves 100a, 100b, and 100c are each switched to the waste liquid side (step S210). In other words, the waste liquid collection tank 90a is communicated with the processing liquid guide section 42a by the switching valve 100a, the waste liquid collection tank 90b is communicated with the treatment liquid guide section 42b by the switching valve 100b, and the waste liquid collection tank 42b is communicated by the switching valve 100c. The tank 90c is connected. That is, at the time of cleaning the multi-stage cup 40, the recovery tank communicated with the processing liquid guide part 42a is switched from the chemical liquid recovery tank 80a to the waste liquid recovery tank 90a by the switching valve 100a, and the recovery tank communicated with the processing liquid guide part 42b is changed. Then, switching from the chemical liquid recovery tank 80b to the waste liquid recovery tank 90b is performed by the switching valve 100b, and the recovery tank communicated with the processing liquid guide 42c is switched from the chemical liquid recovery tank 80c to the waste liquid recovery tank 90c by the switching valve 100c. Thereby, it is possible to prevent the pure water as the cleaning liquid from entering the chemical liquid recovery tanks 90a, 90b and 90c when the multi-stage cup 40 is cleaned. Therefore, it is possible to prevent the pure water as the cleaning liquid from being mixed with the chemical liquid in the chemical liquid recovery tanks 90a, 90b and 90c.

  Next, the multistage cup 40 and the blocking plate 30 are aligned (step S220). That is, when the multi-stage cup 40 and the blocking plate 30 are moved up and down, as shown in FIG. 5, one of the plurality of annular members 41a, 41b, 41c and 41d of the multi-stage cup 40 (in this embodiment, The height of the annular member 41a located on the uppermost side) and the blocking plate 30 are aligned.

  Next, the blocking plate 30 starts to rotate (step S230).

  Next, pure water is discharged from the nozzle 70 to the rotating blocking plate 30 (step S240). Thereby, as shown in FIG. 5, the pure water supplied from the nozzle 70 to the blocking plate 30 can be scattered around by the rotating blocking plate 30. Here, the pure water supplied from the nozzle 70 to the blocking plate 30 is first scattered from the nozzle 70 toward the upper surface of the blocking plate 30 as indicated by an arrow P3, and as indicated by an arrow P4 due to the rotation of the blocking plate 30. It goes to the annular member 41a of the multistage cup 40. Therefore, the chemicals (or crystallized liquids) 710 and 720 adhering to the annular member 41a of the multi-stage cup 40 can be removed with pure water scattered by the rotating blocking plate 30. That is, the annular member 41 a of the multi-stage cup 40 can be washed with pure water scattered by the rotating blocking plate 30. The chemical solution 710 is a chemical solution attached to the end surface of the annular member 41a facing the blocking plate 30, and the chemical solution 720 is a surface different from the end surface of the annular member 41a (for example, opposed to the annular member 41b of the annular member 41a). Surface).

  Next, the blocking plate 30 is swung up and down (step S250). That is, the rotating shielding plate 30 is swung in the vertical direction with a predetermined amplitude (for example, an amplitude of about the interval between the adjacent annular members 41). Thereby, the pure water scattered by the rotating blocking plate 30 can be applied to a surface different from the end surface of the annular member 41a in addition to the end surface of the annular member 41a. Therefore, in addition to the chemical solution 710 attached to the end surface of the annular member 41a, the chemical solution 720 attached to a surface different from the end surface of the annular member 41a is more reliably removed by pure water scattered by the rotating blocking plate 30. can do.

  Next, it is determined whether or not all the annular members 41 have been cleaned (step S260). When the cleaning of all the annular members 41 is not completed (step S260: No), the alignment of the multistage cup 40 and the blocking plate 30 is performed again to perform the cleaning of the annular members 41 that have not been cleaned. Is performed (step S220). At this time, the multi-stage cup 40 and the blocking plate 30 are moved up and down, and among the plurality of annular members 41a, 41b, 41c, and 41d of the multi-stage cup 40, an annular member that has not been cleaned (in this embodiment, for example, an annular member) 41 b) and the height of the blocking plate 30 are aligned.

  That is, step S220 to step S260 are performed in a predetermined order with respect to the annular members 41a, 41b, 41c and 41d. Thereby, the whole multistage cup 40 can be washed.

  On the other hand, when the cleaning of all the annular members 41 is completed (step S260: Yes), a drying process is performed (step S270). That is, as shown in FIG. 6, the blocking plate 30 is moved so that the interval between the blocking plate 30 and the stage 10 becomes a predetermined interval, and the dry gas is supplied from the nozzle 50 between the blocking plate 30 and the stage 10. By doing so, the annular member 41 is dried. Therefore, it is possible to reduce or prevent the pure water from remaining in the annular member 41 of the multi-stage cup 40 by the drying process. Therefore, when the substrate to be processed is processed later by the substrate processing apparatus 1, it is possible to avoid a situation in which the pure water remaining in the multistage cup 40 is mixed into the chemical liquid in the processing liquid recovery tank 90.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or concept of the invention that can be read from the claims and the entire specification, and a substrate processing apparatus with such a change. These cleaning methods are also included in the technical scope of the present invention.

  DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus, 10 ... Stage, 20 ... Nozzle, 30 ... Shut-off plate, 40 ... Multi-stage cup, 41a, 41b, 41c, 41d ... Annular member, 42a, 42b, 42c ... Process liquid guide part, 50, 60, 70 ... Nozzle, 500 ... Chamber, 80a, 80b, 80c ... Treatment liquid recovery tank, 90a, 90b, 90c ... Waste liquid recovery tank, 100a, 100b, 100c ... Switching valve

Claims (6)

A chamber includes a stage on which a substrate to be processed is placed and configured to be rotatable, and a blocking plate provided above the stage and configured to be movable up and down, and rotates the stage. A substrate processing apparatus cleaning method for cleaning a substrate processing apparatus for processing the substrate to be processed by supplying a processing liquid to the substrate to be processed while rotating the substrate to be processed,
Cleaning that cleans the inside of the chamber with the cleaning liquid splashed from the shielding plate by discharging the cleaning liquid from the cleaning liquid supplying means provided above the shielding plate while rotating the shielding plate. A method for cleaning a substrate processing apparatus, comprising: a step.   The substrate cleaning apparatus cleaning method according to claim 1, wherein the cleaning step includes a chamber cleaning step of cleaning an inner wall of the chamber with a cleaning liquid scattered from the blocking plate. The substrate processing apparatus has a configuration in which a plurality of annular members formed in an annular shape so as to surround the stage are arranged in the chamber so as to be stacked in a vertical direction with a processing liquid guide portion therebetween. With a cup,
The method for cleaning a substrate processing apparatus according to claim 1, wherein the cleaning step includes a processing liquid recovery cup cleaning step for cleaning the plurality of annular members with a cleaning liquid scattered from the blocking plate. .   The substrate processing apparatus cleaning method according to claim 3, wherein in the processing liquid recovery cup cleaning step, the plurality of annular members are sequentially cleaned one by one by moving the blocking plate up and down.   In the treatment liquid recovery cup cleaning step, after the plurality of annular members are cleaned with the cleaning liquid splashed from the blocking plate, the blocking plate is disposed so that the interval between the blocking plate and the stage becomes a predetermined interval. And a drying step of drying the plurality of annular members by supplying a drying gas from at least one of a center of the shielding plate and a center of the stage between the shielding plate and the stage. A method for cleaning a substrate processing apparatus according to claim 3 or 4. The substrate processing apparatus includes a processing liquid recovery tank and a waste liquid recovery tank, one for each of the plurality of processing liquid guides, and the processing liquid recovery tank for each of the plurality of processing liquid guides. And switching means for selectively communicating one of the waste liquid recovery tanks,
6. The substrate processing apparatus according to claim 3, wherein in the cleaning step, the switching unit is controlled so that the processing liquid guide unit and the waste liquid recovery tank communicate with each other. Cleaning method.

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