TW202015125A - Wet processing equipment and processing method wherein the wet processing equipment includes a conveying device, an etching zone, a first cleaning zone, a deoxidizing zone, and a second cleaning zone - Google Patents

Wet processing equipment and processing method wherein the wet processing equipment includes a conveying device, an etching zone, a first cleaning zone, a deoxidizing zone, and a second cleaning zone Download PDF

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TW202015125A
TW202015125A TW107135992A TW107135992A TW202015125A TW 202015125 A TW202015125 A TW 202015125A TW 107135992 A TW107135992 A TW 107135992A TW 107135992 A TW107135992 A TW 107135992A TW 202015125 A TW202015125 A TW 202015125A
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jet
wafers
water
zone
cleaning
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TW107135992A
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TWI733060B (en
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易健民
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智優科技股份有限公司
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Priority to CN201811345994.5A priority patent/CN111048436B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A wet processing equipment is suitable for processing plural wafers carried by a carrier. The wet processing equipment includes a conveying device, an etching zone, a first cleaning zone, a deoxidizing zone, and a second cleaning zone. The conveying device can transport the carrier to move. The etching zone has a first chemical solution for soaking the carrier transported by the conveying device to etch plural pins of the wafer. The first cleaning zone is located on the downstream side of the etching zone to clean the wafers on the carrier output through the etching zone. The deoxidizing zone is located on the downstream side of the first cleaning zone and has a second chemical solution for soaking the carrier transported by the conveying device to generate a deoxidation reaction on the pins of each wafer. The second cleaning zone is located on the downstream side of the deoxidizing zone to clean the wafers on the carrier output through the deoxidizing zone.

Description

濕式處理設備及處理方法Wet processing equipment and processing method

本發明是有關於一種濕式處理設備,特別是指一種用以對封裝後的晶片進行濕式化學處理的濕式處理設備及處理方法。The invention relates to a wet processing equipment, in particular to a wet processing equipment and a processing method for performing wet chemical processing on a packaged wafer.

現有透過四方平面無引腳封裝(QFN)方式封裝後的料片,需再透過切割機對料片進行鋸切以將其區分出多個晶片。切割機的鋸切刀在鋸切料片的絕緣封裝體過程中,因鋸切時所產生的高溫易造成各晶片側邊的金屬引腳產生部分熔融的狀態,使得鋸切刀在移動時很容易拉動前述熔融金屬移動而形成絲狀的金屬絲。Existing blanks packaged in a quad flat no-lead package (QFN) method need to be sawed by a cutting machine to distinguish multiple wafers. The saw blade of the cutting machine is in the process of sawing the insulating package of the material. Due to the high temperature generated during sawing, the metal pins on the sides of the wafers are partially melted, which makes the saw blade very moving. It is easy to pull the molten metal to move to form a wire-like metal wire.

其中,當金屬絲直接連接在兩個相鄰的引腳之間時會造成晶片短路。當金屬絲由其中一引腳拉出但與另一相鄰的引腳相間隔時,或者是熔融金屬未被拉成金屬絲時,則不會造成晶片短路。雖然前述兩種情形不會立即造成晶片短路,但是,晶片在長時間熱脹冷縮的使用環境影響下,金屬絲或者是引腳會有遷移(migration)現象,易造成金屬絲與另一相鄰引腳接觸或者是兩個相鄰的引腳相互接觸,進而導致晶片短路的情形產生。Among them, when the metal wire is directly connected between two adjacent pins, it will cause a short circuit of the chip. When the metal wire is pulled out from one of the pins but is spaced apart from another adjacent pin, or when the molten metal is not drawn into the metal wire, it will not cause a short circuit of the chip. Although the above two situations will not immediately cause a short circuit of the chip, under the influence of the thermal expansion and contraction of the chip for a long time, the wire or the pin will have a migration phenomenon, which is easy to cause the wire and the other phase to migrate. Adjacent pins are in contact or two adjacent pins are in contact with each other, which causes a short circuit of the chip.

因此,本發明之一目的,即在提供一種能夠克服先前技術的至少一個缺點的濕式處理設備。Therefore, an object of the present invention is to provide a wet processing apparatus capable of overcoming at least one disadvantage of the prior art.

於是,本發明濕式處理設備,適於對一承載治具所承載的多個晶片進行加工處理,該濕式處理設備包含一輸送裝置、一蝕刻區、一第一清洗區、一去氧化區,及一第二清洗區。Therefore, the wet processing equipment of the present invention is suitable for processing a plurality of wafers carried by a carrying jig. The wet processing equipment includes a conveying device, an etching area, a first cleaning area, and a deoxidizing area , And a second cleaning area.

輸送裝置可沿一第一輸送方向輸送該承載治具移動。蝕刻區具有用以供該輸送裝置所輸送的該承載治具浸泡以蝕刻各該晶片的多個引腳的第一藥液。第一清洗區位於該蝕刻區下游側用以清洗經由該蝕刻區輸出的該承載治具上的該等晶片。去氧化區位於該第一清洗區下游側,並具有用以供該輸送裝置所輸送的該承載治具浸泡以對各該晶片的該等引腳產生去氧化反應的第二藥液。第二清洗區位於該去氧化區下游側用以清洗經由該去氧化區輸出的該承載治具上的該等晶片。The conveying device can convey the carrying jig along a first conveying direction to move. The etching area has a first chemical solution for soaking the carrying jig transported by the transport device to etch a plurality of pins of each wafer. The first cleaning zone is located on the downstream side of the etching zone for cleaning the wafers on the carrier jig output through the etching zone. The deoxidation zone is located on the downstream side of the first cleaning zone, and has a second chemical solution for immersing the carrier jig transported by the transfer device to generate a deoxidation reaction to the pins of each wafer. The second cleaning zone is located on the downstream side of the deoxidation zone for cleaning the wafers on the carrier jig output through the deoxidation zone.

本發明之另一目的,即在提供一種能夠克服先前技術的至少一個缺點的處理方法。Another object of the present invention is to provide a processing method that can overcome at least one disadvantage of the prior art.

於是,本發明處理方法,適於對一承載治具所承載的多個晶片進行加工處理,該處理方法包含下述步驟:Therefore, the processing method of the present invention is suitable for processing a plurality of wafers carried by a carrier jig. The processing method includes the following steps:

透過一輸送裝置沿一第一輸送方向輸送該承載治具移動;Conveying the carrying jig movement along a first conveying direction through a conveying device;

透過一蝕刻區以第一藥液對沿著該第一輸送方向移動的各該晶片的多個引腳進行蝕刻;Etching a plurality of pins of each wafer moving along the first conveying direction with a first chemical solution through an etching area;

透過一第一清洗區對沿著該第一輸送方向由該蝕刻區輸出的該等晶片進行清洗;Cleaning the wafers output from the etching area along the first conveying direction through a first cleaning area;

透過一去氧化區以第二藥液對沿著該第一輸送方向移動的各該晶片的該等引腳產生去氧化反應;及Passing through a deoxidation zone with a second chemical solution to produce a deoxidation reaction on the pins of each wafer moving along the first conveying direction; and

透過一第二清洗區對沿著該第一輸送方向由該去氧化區輸出的該等晶片進行清洗。The wafers output from the deoxidation zone along the first conveying direction are cleaned through a second cleaning zone.

本發明之功效在於:藉由蝕刻區的第一藥液與晶片的各引腳或者是與晶片因鋸切所產生的金屬絲產生化學反應並且蝕刻各引腳或金屬絲,使得兩個相鄰的引腳之間的距離能夠變大至預設的長度,或者是將金屬絲移除,以防止晶片在後續使用時因熱脹冷縮的因素造成金屬絲與另一相鄰引腳接觸或者是兩個相鄰的引腳相互接觸,進而導致短路的情形產生。The effect of the present invention lies in that the first chemical solution in the etching area reacts with each pin of the wafer or the metal wire generated by sawing of the wafer and etchs each pin or metal wire, so that the two adjacent The distance between the pins can be increased to a preset length, or the wire can be removed to prevent the chip from being in contact with another adjacent pin due to thermal expansion and contraction during subsequent use. Two adjacent pins are in contact with each other, which causes a short circuit.

在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same numbers.

參閱圖1及圖2,圖1是本發明濕式處理設備300的一實施例所欲加工處理的一晶片1的一仰視圖,圖2則是晶片1的一側視圖。晶片1是透過例如雙排式四方平面無引腳封裝方式(Dual Row Quad Flat No lead , DR-QFN)方式、四方平面無引腳封裝(QFN)方式或雙邊無引腳封裝(DFN)方式封裝而成。晶片1是以矩形為例,當然其也可以是方形。晶片1包括一絕緣封裝體11、多個引腳12、一金屬導熱層13,及一金屬保護層14。絕緣封裝體11具有一第一面111、一相反於第一面111的第二面112,及四個連接於第一面111與第二面112之間的側面113。各引腳12是由銅所製成且被絕緣封裝體11包覆住一部份。該等引腳12的其中一部分在兩個短邊側的側面113處排列成雙排,其中一排引腳12是裸露於絕緣封裝體11的第一面111,而另一排引腳12則是同時裸露於絕緣封裝體11的第一面111及側面113。該等引腳12的其餘部分在兩個長邊側的側面113處排列成單排,且同時裸露於絕緣封裝體11的第一面111及側面113。金屬導熱層13是由例如錫所製成且被絕緣封裝體11包覆住一部份,金屬導熱層13可裸露於絕緣封裝體11的第一面111。金屬保護層14是由例如銀所製成且鍍於金屬導熱層13上,以遮蔽住金屬導熱層13。1 and 2, FIG. 1 is a bottom view of a wafer 1 to be processed by an embodiment of the wet processing apparatus 300 of the present invention, and FIG. 2 is a side view of the wafer 1. The chip 1 is packaged by, for example, a dual row quad flat no lead (DR-QFN) method, a quad flat no-lead package (QFN) method or a double-sided no-lead package (DFN) method Made. The wafer 1 is exemplified by a rectangular shape. Of course, it may also be a square shape. The chip 1 includes an insulating package 11, a plurality of pins 12, a metal thermal conductive layer 13, and a metal protective layer 14. The insulating package 11 has a first surface 111, a second surface 112 opposite to the first surface 111, and four side surfaces 113 connected between the first surface 111 and the second surface 112. Each pin 12 is made of copper and is partially covered by an insulating package 11. Some of the pins 12 are arranged in a double row at the side 113 on the two short sides. One row of pins 12 is exposed on the first surface 111 of the insulating package 11 and the other row of pins 12 is It is exposed on the first surface 111 and the side surface 113 of the insulating package 11 at the same time. The remaining portions of the pins 12 are arranged in a single row on the side surfaces 113 on the two long sides, and are exposed on the first surface 111 and the side surfaces 113 of the insulating package 11 at the same time. The metal heat-conducting layer 13 is made of, for example, tin and is partially covered by the insulating package 11. The metal heat-conducting layer 13 may be exposed on the first surface 111 of the insulating package 11. The metal protective layer 14 is made of, for example, silver and is plated on the metal heat conduction layer 13 to shield the metal heat conduction layer 13.

參閱圖3、圖4及圖5,一承載治具2用以同時承載多個如圖1所示的晶片1,承載治具2包含一承載盤21,及一可拆卸地蓋合於承載盤21的蓋板23。承載盤21包括一呈矩形的盤體211、多個承載單元212、多個凸塊單元213,及四個墊塊單元214。盤體211形成有多個呈陣列排列的通孔215,及三個定位孔216。各定位孔216鄰近於盤體211的對應角隅處。各承載單元212形成於盤體211界定出各通孔215的一內周面210,並包含四個凸伸臂217,及四個承載片223。各凸伸臂217凸設於內周面210的對應角隅處。各承載片223連接於對應的兩個相鄰的凸伸臂217之間,用以承載晶片1的第一面111(如圖2)或第二面112(如圖2)。在本實施例中是以各承載片223承載第一面111作說明。各凸塊單元213包含四個凸設於盤體211頂面的凸塊218,該等凸塊218鄰近於內周面210的四個角隅處。各墊塊單元214包含多個凸設於盤體211頂面且位於盤體211的對應角隅處的墊塊219,該等墊塊219界定出多個相互垂直交錯連通的溝槽220。盤體211頂面具有兩個長面部221,及兩個短面部222。兩長面部221分別位於盤體211的兩長邊,而兩短面部222分別位於盤體211的兩短邊。各長面部221位於對應的兩個墊塊單元214之間,而各短面部222則位於對應的兩個墊塊單元214之間。Referring to FIG. 3, FIG. 4 and FIG. 5, a carrier jig 2 is used to simultaneously carry a plurality of wafers 1 as shown in FIG. 1, the carrier jig 2 includes a carrier plate 21, and a detachable cover is attached to the carrier plate 21的盖板23。 21 cover plate 23. The bearing plate 21 includes a rectangular plate body 211, a plurality of bearing units 212, a plurality of bump units 213, and four pad units 214. The disc body 211 is formed with a plurality of through holes 215 arranged in an array, and three positioning holes 216. Each positioning hole 216 is adjacent to the corresponding corner of the disc body 211. Each bearing unit 212 is formed on the disk body 211 to define an inner peripheral surface 210 of each through hole 215, and includes four protruding arms 217 and four bearing pieces 223. Each protruding arm 217 is protruded at a corresponding corner of the inner peripheral surface 210. Each carrier piece 223 is connected between the corresponding two adjacent protruding arms 217 for supporting the first surface 111 (see FIG. 2) or the second surface 112 (see FIG. 2) of the wafer 1. In this embodiment, it is described that each bearing piece 223 carries the first surface 111. Each bump unit 213 includes four bumps 218 protruding on the top surface of the disc body 211. The bumps 218 are adjacent to the four corners of the inner peripheral surface 210. Each pad unit 214 includes a plurality of pads 219 protruding on the top surface of the disc body 211 and located at corresponding corners of the disc body 211. The pads 219 define a plurality of grooves 220 that are vertically and staggered and communicate with each other. The top surface of the disc body 211 has two long face parts 221 and two short face parts 222. The two long faces 221 are respectively located on the two long sides of the disc body 211, and the two short faces 222 are respectively located on the two short sides of the disc body 211. Each long face 221 is located between two corresponding pad units 214, and each short face 222 is located between two corresponding pad units 214.

蓋板23包括一呈矩形的板體231,及三個定位柱232。板體231形成有多個呈陣列排列的開孔單元233,及多個穿孔234。各開孔單元233包括一第一開孔230,四個圍繞在第一開孔230外周圍的第二開孔235。該等穿孔234鄰近於板體231的兩長邊及兩短邊並且圍繞在該等開孔單元233外周圍。板體231具有多個擋止框236,各擋止框236呈框形且界定出第一開孔230。各擋止框236用以擋止晶片1的第二面112。各定位柱232凸設於板體231底面且鄰近板體231的對應角隅處,用以卡掣於對應的定位孔216內。The cover plate 23 includes a rectangular plate body 231 and three positioning posts 232. The plate body 231 is formed with a plurality of opening units 233 arranged in an array, and a plurality of through holes 234. Each opening unit 233 includes a first opening 230 and four second openings 235 surrounding the first opening 230. The perforations 234 are adjacent to the two long sides and the two short sides of the plate body 231 and surround the outside of the opening units 233. The plate body 231 has a plurality of blocking frames 236, and each blocking frame 236 has a frame shape and defines a first opening 230. Each blocking frame 236 is used to block the second surface 112 of the wafer 1. Each positioning post 232 is protrudingly arranged on the bottom surface of the plate body 231 and is adjacent to the corresponding corner of the plate body 231 for being caught in the corresponding positioning hole 216.

參閱圖6及圖7,將各晶片1放置於對應的承載單元212後,承載單元212的四個承載片223會抵接於晶片1的第一面111以承載晶片1。隨後,將蓋板23蓋合於承載盤21,使各定位柱232(如圖4)卡掣於對應的定位孔216(如圖3)內,以及各凸塊218頂面及各墊塊219(如圖3)頂面抵接於板體231底面,即完成蓋板23的組裝。此時,晶片1的第一面111大部分區域,以及裸露於第一面111的所有引腳12與金屬保護層14皆會與承載盤21的通孔215對應,藉此,使得處理液、清潔液或壓縮空氣等流體能通過通孔215流入承載治具2內的晶片1處,以對晶片1進行化學反應、清洗或吹乾等動作。晶片1的第二面112大部分區域會與蓋板23的對應開孔單元233的第一開孔230及四個第二開孔235位置對應,藉此,使得處理液、清潔液或壓縮空氣等流體能通過第一開孔230及第二開孔235流入承載治具2內的晶片1處,以對晶片1進行化學反應、清洗或吹乾等動作。Referring to FIGS. 6 and 7, after placing each wafer 1 on the corresponding carrier unit 212, the four carrier sheets 223 of the carrier unit 212 will abut on the first surface 111 of the wafer 1 to carry the wafer 1. Subsequently, the cover plate 23 is covered on the bearing plate 21, so that each positioning post 232 (see FIG. 4) is locked in the corresponding positioning hole 216 (see FIG. 3), and the top surface of each protrusion 218 and each pad 219 (See FIG. 3) The top surface abuts the bottom surface of the plate body 231, that is, the assembly of the cover plate 23 is completed. At this time, most areas of the first surface 111 of the wafer 1 and all the pins 12 and the metal protective layer 14 exposed on the first surface 111 will correspond to the through holes 215 of the carrier plate 21, so that the processing liquid, Fluid such as cleaning fluid or compressed air can flow into the wafer 1 in the carrier jig 2 through the through hole 215 to perform chemical reaction, cleaning, or drying on the wafer 1. Most areas of the second surface 112 of the wafer 1 will correspond to the positions of the first opening 230 and the four second openings 235 of the corresponding opening unit 233 of the cover plate 23, thereby allowing processing liquid, cleaning liquid or compressed air The isofluid can flow into the wafer 1 in the carrier jig 2 through the first opening 230 and the second opening 235 to perform chemical reaction, cleaning, or drying on the wafer 1.

晶片1的第二面112會與蓋板23的擋止框236底面的一擋止端部237相間隔一段距離,藉此,能容許晶片1受到前述流體沖擊時在承載片223與擋止框236的擋止端部237之間上下晃動。此外,晶片1的各側面113會與對應的凸塊218相間隔一段距離,藉此,能容許晶片1受到前述流體沖擊時在該等凸塊218之間前後晃動或左右晃動。The second surface 112 of the wafer 1 will be separated from a blocking end 237 of the bottom surface of the blocking frame 236 of the cover plate 23 by this distance, thereby allowing the wafer 1 to receive the impact of the aforementioned fluid when the carrier sheet 223 and the blocking frame The stop end 237 of 236 shakes up and down. In addition, each side 113 of the wafer 1 will be separated from the corresponding bump 218 by a distance, thereby allowing the wafer 1 to swing back and forth or left and right between the bumps 218 when subjected to the aforementioned fluid impact.

參閱圖8,承載盤21的各長面部221及對應的兩個墊塊單元214,以及蓋板23的板體231底面之間共同界定出一側流道24。參閱圖9,承載盤21的各短面部222及對應的兩個墊塊單元214,以及蓋板23的板體231底面之間共同界定出一端流道25。Referring to FIG. 8, each long face 221 of the bearing tray 21 and the corresponding two pad units 214, and the bottom surface of the plate body 231 of the cover plate 23 define a side flow channel 24 together. Referring to FIG. 9, each short surface portion 222 of the bearing tray 21 and the corresponding two pad units 214, and the bottom surface of the plate body 231 of the cover plate 23 together define an end flow channel 25.

參閱圖3、圖4、圖8及圖9,藉由各墊塊單元214以多個墊塊219抵接於板體231底面的方式,能降低與板體231底面的接觸面積,使處理液或清潔液較不易黏在各墊塊219頂面與板體231底面之間。藉由溝槽220能容許流體於其內流動的設計,使得壓縮空氣吹向承載治具2左右兩側的溝槽220時,能將溝槽220內的處理液或清潔液吹出使其能經由端流道25或通孔215排出。同時,壓縮空氣於溝槽220內流動的過程中也能提升將各墊塊219頂面與板體231底面之間的殘留處理液或清潔液吹走的效果。此外,壓縮空氣吹向承載治具2左右兩側的側流道24時,能將長面部221上的殘留處理液或清潔液吹走使其經由通孔215排出。並且,壓縮空氣能吹向各晶片1並對其吹乾。Referring to FIGS. 3, 4, 8 and 9, each pad unit 214 can reduce the contact area with the bottom surface of the plate body 231 by a plurality of pads 219 abutting the bottom surface of the plate body 231, so that the processing liquid Or the cleaning liquid is less likely to stick between the top surface of each pad 219 and the bottom surface of the plate body 231. The design of the groove 220 can allow fluid to flow in it, so that when compressed air is blown to the grooves 220 on the left and right sides of the carrying fixture 2, the processing liquid or cleaning liquid in the groove 220 can be blown out so that it can pass through The end flow channel 25 or the through hole 215 is discharged. At the same time, the compressed air flowing in the groove 220 can also improve the effect of blowing away the residual treatment liquid or cleaning liquid between the top surface of each pad 219 and the bottom surface of the plate body 231. In addition, when the compressed air is blown to the side flow channels 24 on the left and right sides of the carrier jig 2, the residual processing liquid or cleaning liquid on the long surface 221 can be blown away and discharged through the through hole 215. Also, compressed air can be blown to each wafer 1 and dried.

藉由蓋板23的該等穿孔234對應於承載盤21的各墊塊單元214、各長面部221及各短面部222上方的設計方式,使得壓縮空氣由蓋板23上方吹向該等穿孔234時,壓縮空氣能通過該等穿孔234吹向各墊塊單元214、各長面部221及各短面部222,能將前述結構上所殘留的處理液或清潔液吹走使其經由溝槽220、側流道24及端流道25排出。By designing the perforations 234 of the cover plate 23 corresponding to the pad units 214, the long face portions 221, and the short face portions 222 of the carrier plate 21, compressed air is blown from the cover plate 23 toward the perforations 234 At this time, compressed air can be blown to each block unit 214, each long face 221 and each short face 222 through the perforations 234, which can blow away the treatment liquid or cleaning liquid remaining on the aforementioned structure through the groove 220, The side flow channel 24 and the end flow channel 25 are discharged.

參閱圖10及圖11,是本發明濕式處理設備300的一實施例,適於對承載治具2所承載的多個晶片1(如圖7)進行加工處理。濕式處理設備300包含一機體3、一輸送裝置5,及一移載裝置6。10 and 11, it is an embodiment of the wet processing equipment 300 of the present invention, which is suitable for processing a plurality of wafers 1 (as shown in FIG. 7) carried by the carrier jig 2. The wet processing equipment 300 includes a body 3, a conveying device 5, and a transfer device 6.

機體3包括一前端301,及一後端302。定義通過機體3的前端301與後端302的方向為一前後方向X、一垂直於前後方向X的左右方向Y,及一垂直於前後方向X與左右方向Y的上下方向Z。The body 3 includes a front end 301 and a rear end 302. The directions passing through the front end 301 and the rear end 302 of the body 3 are defined as a front-rear direction X, a left-right direction Y perpendicular to the front-rear direction X, and an up-down direction Z perpendicular to the front-rear direction X and the left-right direction Y.

機體3包括一濕潤區31、一蝕刻區32、一第一清洗區33、一去氧化區35、一第二清洗區36、一檢查區 38、一移除區39、一第三清洗區40、一中和區41、一第四清洗區42、一乾燥區44,及一回流區45。前述濕潤區31、蝕刻區32、第一清洗區33、去氧化區35、第二清洗區36、檢查區 38、移除區39、第三清洗區40、中和區41、第四清洗區42及乾燥區44是沿著前後方向X由前朝後依序排列成一列。而回流區45則是沿著前後方向X延伸成另一列且沿左右方向Y排列於前述列的右側。回流區45與濕潤區31共同界定出前端301,回流區45則與乾燥區 44共同界定出後端302。The body 3 includes a wetting area 31, an etching area 32, a first cleaning area 33, a deoxidizing area 35, a second cleaning area 36, an inspection area 38, a removal area 39, a third cleaning area 40 , A neutralization zone 41, a fourth cleaning zone 42, a drying zone 44, and a reflux zone 45. The aforementioned wet area 31, etching area 32, first cleaning area 33, deoxidation area 35, second cleaning area 36, inspection area 38, removal area 39, third cleaning area 40, neutralization area 41, fourth cleaning area 42 and the drying area 44 are arranged in a row along the front-back direction X from front to back in sequence. The recirculation zone 45 extends into another row along the front-rear direction X and is arranged on the right side of the aforementioned row along the left-right direction Y. The return area 45 and the wet area 31 together define the front end 301, and the return area 45 and the drying area 44 together define the rear end 302.

輸送裝置5包括一第一輸送機構51,及一沿左右方向Y與第一輸送機構51相間隔的第二輸送機構52。第一輸送機構51設置於前述濕潤區31、蝕刻區32、第一清洗區33、去氧化區35、第二清洗區36、檢查區 38、移除區39、第三清洗區40、中和區41、第四清洗區42及乾燥區44。第一輸送機構51具有一位於濕潤區 31且鄰近前端301的入料前端 511,及一位於乾燥區44且鄰近後端302的出料後端512。第一輸送機構51可沿一由前朝後的第一輸送方向D1輸送承載治具2於前述各區內移動。第二輸送機構52設置於回流區45內並具有一鄰近後端302的入料後端521,及一鄰近前端301的出料前端522。第二輸送機構52可沿一相反於第一輸送方向D1的第二輸送方向D2輸送承載治具2於回流區45內移動。The conveying device 5 includes a first conveying mechanism 51 and a second conveying mechanism 52 spaced apart from the first conveying mechanism 51 in the left-right direction Y. The first conveying mechanism 51 is disposed in the aforementioned wetting area 31, etching area 32, first cleaning area 33, deoxidation area 35, second cleaning area 36, inspection area 38, removal area 39, third cleaning area 40, neutralization Zone 41, fourth cleaning zone 42 and drying zone 44. The first conveying mechanism 51 has a feeding front end 511 located in the wetting zone 31 and adjacent to the front end 301, and a discharging front end 512 located in the drying zone 44 and adjacent to the rear end 302. The first conveying mechanism 51 can convey the carrying jig 2 in a first conveying direction D1 from front to back to move in the aforementioned areas. The second conveying mechanism 52 is disposed in the recirculation zone 45 and has a feeding rear end 521 adjacent to the rear end 302 and a discharging front end 522 adjacent to the front end 301. The second conveying mechanism 52 can convey the carrying jig 2 to move in the return area 45 along a second conveying direction D2 opposite to the first conveying direction D1.

參閱圖12及圖13,濕潤區31包括一入料段311、一位於入料段311下游側的濕潤段312,及一位於濕潤段312下游側的吹乾段313。濕潤段312包含多對沿第一輸送方向D1相間隔排列的噴灑件314。每一對的兩個噴灑件314沿上下方向Z相間隔,其中,下方噴灑件314用以朝上噴水310,而上方噴灑件314則用以朝下噴水310。藉此,使得前述噴灑件314能對第一輸送機構51所輸送的承載治具2上的晶片1(如圖7)噴灑水310以進行濕潤作業。Referring to FIGS. 12 and 13, the wet zone 31 includes a feed section 311, a wet section 312 located downstream of the feed section 311, and a blow-dry section 313 located downstream of the wet section 312. The wetting section 312 includes a plurality of spraying elements 314 arranged at intervals in the first conveying direction D1. The two spray members 314 of each pair are spaced in the vertical direction Z, wherein the lower spray member 314 is used to spray water 310 upward, and the upper spray member 314 is used to spray water 310 downward. As a result, the aforementioned spraying member 314 can spray water 310 on the wafer 1 (see FIG. 7) on the carrying jig 2 conveyed by the first conveying mechanism 51 to perform the wetting operation.

第一輸送機構51包含多個沿前後方向X相間隔排列的下輸送滾輪513,及多個沿前後方向X相間隔排列的上輸送滾輪514。該等下輸送滾輪513及該等上輸送滾輪514皆位於入料前端 511及出料後端512(如圖10)之間,各下輸送滾輪513為一主動滾輪,而各上輸送滾輪514為一從動滾輪。上輸送滾輪514的數量少於下輸送滾輪513的數量,且各上輸送滾輪514位在對應下輸送滾輪513上方。第一輸送機構51透過下輸送滾輪513及上輸送滾輪514帶動承載治具2沿第一輸送方向D1移動。The first conveyance mechanism 51 includes a plurality of lower conveyance rollers 513 arranged at intervals in the front-rear direction X, and a plurality of upper conveyance rollers 514 arranged at intervals in the front-rear direction X. The lower conveying rollers 513 and the upper conveying rollers 514 are located between the feeding front end 511 and the discharging rear end 512 (see FIG. 10), each lower conveying roller 513 is an active roller, and each upper conveying roller 514 is A driven roller. The number of upper conveying rollers 514 is less than the number of lower conveying rollers 513, and each upper conveying roller 514 is located above the corresponding lower conveying roller 513. The first conveying mechanism 51 drives the carrying jig 2 to move in the first conveying direction D1 through the lower conveying roller 513 and the upper conveying roller 514.

參閱圖12及圖14,吹乾段313包含位於噴灑件314下游側的兩對噴氣頭315,及兩個側噴氣嘴316(如圖14)。兩對噴氣頭315沿第一輸送方向D1相間隔排列,每一對的兩個噴氣頭315沿上下方向Z相間隔,各噴氣頭315用以噴出風刀(air knife)形式的壓縮氣體。其中,下方噴氣頭315呈傾斜地朝上並朝前噴氣,上方噴氣頭315則是呈傾斜地朝下並朝前噴氣。藉此,使得前述噴氣頭315能對第一輸送機構51所輸送的承載治具2上的晶片1(如圖7)噴氣以移除晶片1上的水310。兩個側噴氣嘴316沿左右方向Y相間隔,其中之一是沿著一左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著一相反於左噴氣方向D3的右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水310。Referring to FIGS. 12 and 14, the drying section 313 includes two pairs of jet heads 315 on the downstream side of the spray member 314 and two side jet nozzles 316 (see FIG. 14 ). Two pairs of jet heads 315 are arranged at intervals in the first conveying direction D1, and the two jet heads 315 of each pair are spaced apart in the vertical direction Z, and each jet head 315 is used to eject compressed gas in the form of an air knife. Among them, the lower jet head 315 jets obliquely upward and forward, and the upper jet head 315 jets obliquely downward and forward. As a result, the aforementioned jet head 315 can jet the wafer 1 (see FIG. 7) on the carrying jig 2 conveyed by the first conveying mechanism 51 to remove the water 310 on the wafer 1. The two side jet nozzles 316 are spaced apart in the left-right direction Y, one of which is a side jet of the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along a left jet direction D3, and the other is The wafer 1 on the jig 2 is jetted sideways along a right jet direction D4 opposite to the left jet direction D3, thereby removing the water 310 on the wafer 1.

參閱圖15及圖16,蝕刻區32包括一分隔段321、一位於分隔段321下游側的化學反應段322,及一位於化學反應段322下游側的吹乾段323。分隔段321位於濕潤區31的吹乾段313(如圖12)下游側,用以分隔吹乾段313與化學反應段322,以避免化學反應段322內的化學藥液滲流入吹乾段313內。化學反應段322形成一用以供第一輸送機構51所輸送的承載治具2穿過的第一藥液槽324,第一藥液槽324容置有用以供承載治具2浸泡的第一藥液325。在本實施例中,第一藥液325為用以蝕刻各晶片1的引腳12(如圖1)的蝕刻液。化學反應段322包含多個設置於第一藥液槽324內並沿第一輸送方向D1相間隔且上下交錯排列的第一藥液噴頭326。該等第一藥液噴頭326中的一部分朝上對承載治具2上的晶片1噴出水刀形式的第一藥液325,而另一部分則是朝下對晶片1噴出水刀形式的第一藥液325。第一輸送機構51還包括兩個實心滾輪515,及兩個液切滾輪516。兩實心滾輪515分別位於第一藥液槽324前後兩端。兩液切滾輪516分別抵接於兩實心滾輪515,用以阻擋第一藥液325以防其大量溢流入分隔段321及吹乾段323。各液切滾輪516被承載治具2頂撐的部分能向上位移,以容許承載治具2通過實心滾輪515與液切滾輪516之間。Referring to FIGS. 15 and 16, the etching area 32 includes a separation section 321, a chemical reaction section 322 on the downstream side of the separation section 321, and a drying section 323 on the downstream side of the chemical reaction section 322. The separating section 321 is located on the downstream side of the drying section 313 (see FIG. 12) of the wet area 31 to separate the drying section 313 and the chemical reaction section 322 to prevent the chemical liquid in the chemical reaction section 322 from seeping into the drying section 313 Inside. The chemical reaction section 322 forms a first chemical liquid tank 324 through which the carrying jig 2 conveyed by the first conveying mechanism 51 passes.药液325. In this embodiment, the first chemical solution 325 is an etching solution for etching the pins 12 of each wafer 1 (see FIG. 1). The chemical reaction section 322 includes a plurality of first chemical liquid spray heads 326 disposed in the first chemical liquid tank 324 and spaced along the first conveying direction D1 and alternately arranged up and down. A portion of the first chemical liquid spray heads 326 sprays the first chemical liquid 325 in the form of a water jet on the wafer 1 on the carrier 2 upwards, and another portion sprays the first water jet in the form of a water jet on the wafer 1 downwards药液325. The first conveying mechanism 51 further includes two solid rollers 515 and two liquid cutting rollers 516. The two solid rollers 515 are located at the front and rear ends of the first chemical tank 324, respectively. The two liquid cutting rollers 516 are respectively in contact with the two solid rollers 515 to block the first chemical liquid 325 to prevent it from overflowing into the partition section 321 and the drying section 323. The portion of each liquid cutting roller 516 supported by the load-bearing jig 2 can be displaced upward to allow the load-bearing jig 2 to pass between the solid roller 515 and the liquid-cut roller 516.

參閱圖15及圖17,吹乾段323包含位於第一藥液槽324下游側的兩對第一噴頭327及兩個第一側噴嘴328。兩對第一噴頭327沿第一輸送方向D1相間隔排列,每一對的兩個第一噴頭327沿上下方向Z相間隔。各第一噴頭327的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第一噴頭327呈傾斜地朝上並朝前噴氣,上方第一噴頭327則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴頭327能對第一輸送機構51所輸送的承載治具2上的晶片1(如圖7)噴氣以移除晶片1上的第一藥液325。各第一側噴嘴328的結構及設置方式與側噴氣嘴316(如圖14)的結構及設置方式相同。兩個第一側噴嘴328沿左右方向Y相間隔,兩個第一側噴嘴328其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第一藥液325。15 and 17, the drying section 323 includes two pairs of first spray heads 327 and two first side nozzles 328 located on the downstream side of the first chemical liquid tank 324. The two pairs of first nozzles 327 are arranged at intervals in the first conveying direction D1, and the two first nozzles 327 of each pair are arranged at intervals in the vertical direction Z. The structure and arrangement of each first spray head 327 are the same as the structure and arrangement of the spray head 315 (see FIG. 12). The lower first spray head 327 is inclined upward and sprays forward, and the upper first spray head 327 is inclined inclined. Jet down and forward. In this way, the first spray head 327 can jet the wafer 1 (see FIG. 7) on the carrier jig 2 transported by the first transport mechanism 51 to remove the first chemical liquid 325 on the wafer 1. The structure and installation manner of each first side nozzle 328 are the same as the structure and installation manner of the side air nozzle 316 (see FIG. 14 ). The two first side nozzles 328 are spaced apart in the left-right direction Y, and one of the two first side nozzles 328 is lateral to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left jet direction D3 Jetting, and the other one is jetting the wafer 1 on the carrier jig 2 sideways along the right jet direction D4, thereby removing the first chemical liquid 325 on the wafer 1.

參閱圖18,第一清洗區33包括一位於吹乾段323(如圖15)下游側的第一清洗段331、一位於第一清洗段331下游側的第二清洗段332、一位於第二清洗段332下游側的第三清洗段333,及一位於第三清洗段333下游側的第四清洗段334。第一清洗段331包含兩個沿上下方向Z相間隔的第一噴水頭335,及兩個沿上下方向Z相間隔且位於第一噴水頭335下游側的第一噴氣頭336。各第一噴水頭335的結構與第一藥液噴頭326(如圖15)的結構相同。兩個第一噴水頭335其中之一朝上對承載治具2上的晶片1噴出水刀形式的水337,而其中另一則是朝下對晶片1噴出水刀形式的水337,藉此,以對晶片1進行第一道清洗。各第一噴氣頭336的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第一噴氣頭336呈傾斜地朝上並朝前噴氣,上方第一噴氣頭336則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭336能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水337。Referring to FIG. 18, the first cleaning zone 33 includes a first cleaning section 331 located downstream of the drying section 323 (see FIG. 15), a second cleaning section 332 located downstream of the first cleaning section 331, and a second cleaning section 332 A third cleaning section 333 on the downstream side of the cleaning section 332, and a fourth cleaning section 334 on the downstream side of the third cleaning section 333. The first cleaning section 331 includes two first spray heads 335 spaced apart in the vertical direction Z, and two first spray heads 336 spaced apart in the vertical direction and located on the downstream side of the first spray head 335. The structure of each first water spray head 335 is the same as the structure of the first chemical liquid spray head 326 (see FIG. 15). One of the two first water-jet heads 335 sprays water 337 in the form of a waterjet toward the wafer 1 on the jig 2 upward, and the other sprays water 337 in the form of a waterjet toward the wafer 1 downward, thereby, In order to perform the first cleaning of the wafer 1. The structure and arrangement of each first jet head 336 is the same as that of jet head 315 (see FIG. 12). The lower first jet head 336 jets obliquely upward and forward, and the upper first jet head 336 is Jet downwards obliquely and forward. In this way, the aforementioned first jetting head 336 can jet the wafer 1 on the carrying jig 2 conveyed by the first conveying mechanism 51 to remove the water 337 on the wafer 1.

第二清洗段332形成有一用以供第一輸送機構51所輸送的承載治具2穿過的水槽338,水槽338內容置有用以供承載治具2浸泡用以清洗晶片1的水339。水槽338前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。第二清洗段332包含多個設置於水槽338內並沿第一輸送方向D1相間隔且上下交錯排列的第二噴水頭340,及兩個沿上下方向Z相間隔且位於水槽338下游側的第二噴氣頭341。該等第二噴水頭340中的一部分朝上對承載治具2上的晶片1噴出水刀形式的水339,而另一部分則是朝下對晶片1噴出水刀形式的水339,藉此,以對晶片1進行第二道清洗。各第二噴氣頭341的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第二噴氣頭341呈傾斜地朝上並朝前噴氣,上方第二噴氣頭341則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第二噴氣頭341能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水339。The second cleaning section 332 is formed with a water tank 338 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through. The water tank 338 contains water 339 for the carrier jig 2 to soak for cleaning the wafer 1. Two solid rollers 515 and two liquid cutting rollers 516 are also arranged at the front and rear ends of the water tank 338. The second cleaning section 332 includes a plurality of second sprinkler heads 340 disposed in the water tank 338 and spaced along the first conveying direction D1 and staggered up and down, and two second water spray heads 340 spaced along the vertical direction Z and located on the downstream side of the water tank 338 Two jet heads 341. A part of the second water jet heads 340 sprays water 339 in the form of a waterjet toward the wafer 1 on the carrier 2 upward, and another part sprays water 339 in the form of a waterjet toward the wafer 1 downward, thereby, In order to perform the second cleaning of the wafer 1. The structure and arrangement of each second jet head 341 are the same as those of the jet head 315 (as shown in FIG. 12). The lower second jet head 341 jets obliquely upward and forward, and the upper second jet head 341 is Jet downwards obliquely and forward. As a result, the aforementioned second jet head 341 can jet the wafer 1 on the carrying jig 2 conveyed by the first conveying mechanism 51 to remove the water 339 on the wafer 1.

第三清洗段333包含多對沿第一輸送方向D1相間隔排列的第一噴灑件342,及兩個沿上下方向Z相間隔且位於第一噴灑件342下游側的第三噴氣頭343。各第一噴灑件342的結構及設置方式與噴灑件314 (如圖12)的結構及設置方式相同。每一對的兩個第一噴灑件342沿上下方向Z相間隔,其中,下方第一噴灑件342用以朝上對晶片1噴灑水344,而上方第一噴灑件342則用以朝下對晶片1噴灑水344。藉此,使得前述第一噴灑件342能對晶片1進行第三道清洗。各第三噴氣頭343的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第三噴氣頭343呈傾斜地朝上並朝前對晶片1噴氣,上方第三噴氣頭343則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第三噴氣頭343所噴出的壓縮氣體能移除晶片1上的水344。The third cleaning section 333 includes a plurality of pairs of first spraying elements 342 spaced apart along the first conveying direction D1, and two third jetting heads 343 spaced along the vertical direction Z and located downstream of the first spraying elements 342. The structure and arrangement of each first spraying member 342 are the same as the structure and arrangement of the spraying member 314 (see FIG. 12). The two first spraying members 342 of each pair are spaced apart in the vertical direction Z, wherein the lower first spraying member 342 is used to spray water 344 to the wafer 1 upwards, and the upper first spraying member 342 is used to face downwards Wafer 1 sprayed with water 344. In this way, the first spraying member 342 can perform the third cleaning of the wafer 1. The structure and arrangement of each third jet head 343 are the same as those of the jet head 315 (see FIG. 12). The lower third jet head 343 jets the wafer 1 obliquely upward and forward, and the upper third jet head 343 343 jets wafer 1 obliquely downward and forward. In this way, the compressed gas ejected from the third jet head 343 can remove the water 344 on the wafer 1.

第四清洗段334包含多對沿第一輸送方向D1相間隔排列的第二噴灑件345、兩對位於第二噴灑件345下游側的第四噴氣頭346,及兩個位於第二噴灑件345下游側的側噴氣嘴347。各第二噴灑件345的結構及設置方式與噴灑件314 (如圖12)的結構及設置方式相同。每一對的兩個第二噴灑件345沿上下方向Z相間隔,其中,下方第二噴灑件345用以朝上對晶片1噴灑水348,而上方第二噴灑件345則用以朝下對晶片1噴灑水348。藉此,使得前述第二噴灑件345能對晶片1進行第四道清洗。The fourth cleaning section 334 includes a plurality of pairs of second spray members 345 arranged at intervals along the first conveying direction D1, two pairs of fourth spray heads 346 located downstream of the second spray members 345, and two pairs of second spray members 345 The downstream side jet nozzle 347. The structure and arrangement of each second spraying member 345 are the same as the structure and arrangement of the spraying member 314 (see FIG. 12). The two second spraying members 345 of each pair are spaced apart in the vertical direction Z, wherein the lower second spraying member 345 is used to spray water 348 upwards to the wafer 1, and the upper second spraying member 345 is used to downwardly couple Wafer 1 is sprayed with water 348. In this way, the aforementioned second spraying member 345 can perform the fourth cleaning of the wafer 1.

參閱圖18及圖19,兩對第四噴氣頭346沿第一輸送方向D1相間隔排列,每一對的兩個第四噴氣頭346沿上下方向Z相間隔。各第四噴氣頭346的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第四噴氣頭346呈傾斜地朝上並朝前對晶片1(如圖7)噴氣,上方第四噴氣頭346則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第四噴氣頭361所噴出的壓縮氣體能移除晶片1上的水348。各側噴氣嘴347的結構及設置方式與側噴氣嘴316(如圖14)的結構及設置方式相同。兩個側噴氣嘴347沿左右方向Y相間隔,兩個側噴氣嘴347其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水348。Referring to FIGS. 18 and 19, two pairs of fourth jet heads 346 are spaced apart along the first conveying direction D1, and the two fourth jet heads 346 of each pair are spaced apart in the vertical direction Z. The structure and arrangement of each fourth jet head 346 are the same as those of the jet head 315 (see FIG. 12). The lower fourth jet head 346 jets the wafer 1 (see FIG. 7) obliquely upward and forward. The upper fourth jet head 346 jets the wafer 1 obliquely downward and forward. With this, the compressed gas ejected from the aforementioned fourth jet head 361 can remove the water 348 on the wafer 1. The structure and arrangement of each side jet nozzle 347 are the same as the structure and arrangement of side jet nozzle 316 (see FIG. 14). The two side jet nozzles 347 are spaced apart in the left-right direction Y, and one of the two side jet nozzles 347 jets the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 laterally along the left jet direction D3. The other one is to laterally jet the wafer 1 on the carrier jig 2 along the right jet direction D4, thereby removing the water 348 on the wafer 1.

參閱圖20及圖21,去氧化區35整體結構與圖15的蝕刻區32結構相同,去氧化區35包括一分隔段351、一位於分隔段351下游側的化學反應段352,及一位於化學反應段352下游側的吹乾段353。分隔段351位於第四清洗段334(如圖18)下游側,用以分隔第四清洗段334與化學反應段352,以避免化學反應段352內的化學藥液滲流入第四清洗段334內。化學反應段352形成一用以供第一輸送機構51所輸送的承載治具2穿過的第二藥液槽354,第二藥液槽354容置有用以供承載治具2浸泡的第二藥液355。第二藥液槽354前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。在本實施例中,第二藥液355為用以對各晶片1的引腳12(如圖1)產生去氧化反應的去氧化液。化學反應段352包含多個設置於第二藥液槽354內並沿第一輸送方向D1相間隔且上下交錯排列的第二藥液噴頭356。該等第二藥液噴頭356中的一部分朝上對承載治具2上的晶片1噴出水刀形式的第二藥液355,而另一部分則是朝下對晶片1噴出水刀形式的第二藥液355。Referring to FIGS. 20 and 21, the overall structure of the deoxidation zone 35 is the same as the structure of the etching zone 32 of FIG. 15. The deoxidation zone 35 includes a separation section 351, a chemical reaction section 352 located downstream of the separation section 351, and a chemical The drying section 353 on the downstream side of the reaction section 352. The separating section 351 is located on the downstream side of the fourth cleaning section 334 (see FIG. 18 ), and is used to separate the fourth cleaning section 334 and the chemical reaction section 352 to prevent the chemical liquid in the chemical reaction section 352 from flowing into the fourth cleaning section 334 . The chemical reaction section 352 forms a second medicinal liquid tank 354 for the carrying jig 2 conveyed by the first conveying mechanism 51 to pass therethrough. Medicine liquid 355. Two solid rollers 515 and two liquid cutting rollers 516 are also disposed at the front and rear ends of the second chemical liquid tank 354. In this embodiment, the second chemical solution 355 is a deoxidizing solution for generating a deoxidizing reaction on the pins 12 of each wafer 1 (see FIG. 1). The chemical reaction section 352 includes a plurality of second chemical liquid spray heads 356 disposed in the second chemical liquid tank 354 and spaced along the first conveying direction D1 and staggered up and down. A part of the second chemical liquid spray heads 356 sprays a second chemical liquid 355 in the form of a water jet on the wafer 1 on the carrier 2 upward, and a second part sprays a second water jet in the form of a water jet on the wafer 1 downward Medicine liquid 355.

參閱圖20及圖21,吹乾段353包含位於第二藥液槽354下游側的兩對第二噴頭357及兩個第二側噴嘴358。兩對第二噴頭357沿第一輸送方向D1相間隔排列,每一對的兩個第二噴頭357沿上下方向Z相間隔。各第二噴頭357的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第二噴頭357呈傾斜地朝上並朝前噴氣,上方第一噴頭327則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴頭327能對晶片1噴氣以移除晶片1上的第二藥液355。各第二側噴嘴358的結構及設置方式與側噴氣嘴316(如圖14)的結構及設置方式相同。兩個第二側噴嘴358沿左右方向Y相間隔,兩個第二側噴嘴358其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第二藥液355。Referring to FIGS. 20 and 21, the drying section 353 includes two pairs of second spray heads 357 and two second side nozzles 358 on the downstream side of the second chemical liquid tank 354. The two pairs of second heads 357 are arranged at intervals in the first conveying direction D1, and the two second heads 357 of each pair are spaced at intervals in the vertical direction Z. The structure and arrangement of each second nozzle 357 are the same as the structure and arrangement of the jet nozzle 315 (as shown in FIG. 12). The lower second nozzle 357 jets obliquely upward and forward, and the upper first nozzle 327 jets obliquely. Jet down and forward. In this way, the aforementioned first shower head 327 can jet the wafer 1 to remove the second chemical liquid 355 on the wafer 1. The structure and installation manner of each second side nozzle 358 are the same as the structure and installation manner of the side air nozzle 316 (see FIG. 14 ). The two second side nozzles 358 are spaced apart in the left-right direction Y, and one of the two second side nozzles 358 is lateral to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left jet direction D3 Jetting, and the other one is jetting the wafer 1 on the carrier jig 2 laterally along the right jet direction D4, thereby removing the second chemical liquid 355 on the wafer 1.

參閱圖22,第二清洗區36的結構與圖18的第一清洗區33的結構類似,差異只在於第二清洗區36少了如第一清洗區33的第三清洗段333 (如圖18)。第二清洗區36包括一位於吹乾段353(如圖20)下游側的第一清洗段361、一位於第一清洗段361下游側的第二清洗段362,及一位於第二清洗段362下游側的第三清洗段363。第一清洗段361包含兩個沿上下方向Z相間隔的第一噴水頭364,及兩個沿上下方向Z相間隔且位於第一噴水頭364下游側的第一噴氣頭365。各第一噴水頭364的結構與第一噴水頭335(如圖18)的結構相同。兩個第一噴水頭364其中之一朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的水366,而其中另一則是朝下對晶片1噴出水刀形式的水366,藉此,以對晶片1進行第一道清洗。各第一噴氣頭365的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第一噴氣頭365呈傾斜地朝上並朝前噴氣,上方第一噴氣頭365則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭365能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水366。Referring to FIG. 22, the structure of the second cleaning area 36 is similar to the structure of the first cleaning area 33 of FIG. 18, the only difference is that the second cleaning area 36 lacks the third cleaning section 333 like the first cleaning area 33 (as shown in FIG. 18 ). The second cleaning zone 36 includes a first cleaning section 361 located downstream of the blow drying section 353 (see FIG. 20), a second cleaning section 362 located downstream of the first cleaning section 361, and a second cleaning section 362 The third cleaning section 363 on the downstream side. The first cleaning section 361 includes two first spray heads 364 spaced apart in the vertical direction Z, and two first spray heads 365 spaced apart in the vertical direction and located on the downstream side of the first spray head 364. The structure of each first water jet head 364 is the same as the structure of the first water jet head 335 (see FIG. 18). One of the two first water spray heads 364 sprays water 366 in the form of a waterjet upward to the wafer 1 (see FIG. 7) on the carrier fixture 2, and the other sprays water in the form of a waterjet downward to the wafer 1 366, by which the first cleaning of the wafer 1 is performed. The structure and arrangement of each first jet head 365 are the same as those of the jet head 315 (see FIG. 12). The lower first jet head 365 jets obliquely upward and forward, and the upper first jet head 365 is Jet downwards obliquely and forward. In this way, the aforementioned first jet head 365 can jet the wafer 1 on the carrying jig 2 conveyed by the first conveying mechanism 51 to remove the water 366 on the wafer 1.

第二清洗段362形成有一用以供第一輸送機構51所輸送的承載治具2穿過的水槽367,水槽367內容置有用以供承載治具2浸泡用以清洗晶片1的水368。水槽367前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。第二清洗段362包含多個設置於水槽367內並沿第一輸送方向D1相間隔且上下交錯排列的第二噴水頭369,及兩個沿上下方向Z相間隔且位於水槽367下游側的第二噴氣頭370。該等第二噴水頭369中的一部分朝上對承載治具2上的晶片1噴出水刀形式的水368,而另一部分則是朝下對晶片1噴出水刀形式的水368,藉此,以對晶片1進行第二道清洗。各第二噴氣頭370的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第二噴氣頭370呈傾斜地朝上並朝前噴氣,上方第二噴氣頭370則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第二噴氣頭370能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水368。The second cleaning section 362 forms a water tank 367 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through. The water tank 367 contains water 368 for the carrier jig 2 to soak to clean the wafer 1. Two solid rollers 515 and two liquid cutting rollers 516 are also arranged at the front and rear ends of the water tank 367. The second cleaning section 362 includes a plurality of second sprinkler heads 369 disposed in the water tank 367 and spaced along the first conveying direction D1 and staggered up and down, and two second water jet heads spaced along the vertical direction Z and located on the downstream side of the water tank 367 Two jet heads 370. A part of the second water jet heads 369 sprays water 368 in the form of a water jet toward the wafer 1 on the carrier jig 2 upward, and another part sprays water 368 in the form of a water jet toward the wafer 1 downward, thereby, In order to perform the second cleaning of the wafer 1. The structure and arrangement of each second jet head 370 are the same as those of the jet head 315 (as shown in FIG. 12). The lower second jet head 370 jets obliquely upward and forward, and the upper second jet head 370 is Jet downwards obliquely and forward. As a result, the aforementioned second jet head 370 can jet the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 to remove the water 368 on the wafer 1.

參閱圖22及圖23,第三清洗段363包含多對沿第一輸送方向D1相間隔排列的噴灑件371、兩對位於噴灑件371下游側的第三噴氣頭372,及兩個位於噴灑件371下游側的側噴氣嘴373。各噴灑件371的結構及設置方式與噴灑件314 (如圖12)的結構及設置方式相同。每一對的兩個噴灑件371沿上下方向Z相間隔,其中,下方噴灑件371用以朝上對晶片1噴灑水374,而上方噴灑件371則用以朝下對晶片1噴灑水374。藉此,使得前述噴灑件371能對晶片1進行第三道清洗。Referring to FIG. 22 and FIG. 23, the third cleaning section 363 includes a plurality of pairs of spray members 371 spaced apart along the first conveying direction D1, two pairs of third jet heads 372 located downstream of the spray members 371, and two spray members 371 The downstream side jet nozzle 373. The structure and arrangement of each spraying member 371 are the same as the structure and arrangement of the spraying member 314 (see FIG. 12). The two spraying members 371 of each pair are spaced along the vertical direction Z, wherein the lower spraying member 371 is used to spray water 374 on the wafer 1 upward, and the upper spraying member 371 is used to spray water 374 on the wafer 1 downward. Thereby, the aforementioned spraying member 371 can perform the third cleaning of the wafer 1.

兩對第三噴氣頭372沿第一輸送方向D1相間隔排列,每一對的兩個第三噴氣頭372沿上下方向Z相間隔。各第三噴氣頭372的結構及設置方式與噴氣頭315(如圖12)的結構及設置方式相同,下方第三噴氣頭372呈傾斜地朝上並朝前對晶片1噴氣,上方第三噴氣頭372則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第三噴氣頭372所噴出的壓縮氣體能移除晶片1上的水374。各側噴氣嘴373的結構及設置方式與側噴氣嘴316(如圖14)的結構及設置方式相同。兩個側噴氣嘴373沿左右方向Y相間隔,兩個側噴氣嘴373其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水374。The two pairs of third jet heads 372 are arranged at intervals in the first conveying direction D1, and the two third jet heads 372 of each pair are spaced at intervals in the vertical direction Z. The structure and arrangement of each third jet head 372 are the same as those of the jet head 315 (see FIG. 12). The lower third jet head 372 jets the wafer 1 obliquely upward and forward, and the upper third jet head 372 jets wafer 1 obliquely downward and forward. In this way, the compressed gas ejected from the third jet head 372 can remove the water 374 on the wafer 1. The structure and arrangement of each side jet nozzle 373 are the same as the structure and arrangement of side jet nozzle 316 (see FIG. 14). The two side jet nozzles 373 are spaced apart in the left-right direction Y, and one of the two side jet nozzles 373 jets the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 laterally along the left jet direction D3. The other one is to laterally jet the wafer 1 on the carrier jig 2 along the right jet direction D4, thereby removing the water 374 on the wafer 1.

參閱圖10及圖11,檢查區 38位於第三清洗段363(如圖22)下游側。當第一輸送機構51輸送承載治具2移動至檢查區 38時,工作人員通過控制第一輸送機構51停止運轉,承載治具2便能停止在檢查區 38處。藉此,工作人員能將承載治具2取出,以檢查各晶片1的引腳12(如圖1)的蝕刻及清洗狀況。10 and 11, the inspection area 38 is located on the downstream side of the third cleaning section 363 (see FIG. 22). When the first conveying mechanism 51 conveys the carrying jig 2 to the inspection area 38, the worker stops the operation by controlling the first conveying mechanism 51, and the carrying jig 2 can stop at the inspection area 38. In this way, the staff can take out the carrying jig 2 to check the etching and cleaning status of the pins 12 (see FIG. 1) of each wafer 1.

參閱圖24,移除區39整體結構與圖15的蝕刻區32結構相同,移除區39包括一分隔段391、一位於分隔段391下游側的化學反應段392,及一位於化學反應段392下游側的吹乾段393。分隔段391位於檢查區 38(如圖11)下游側,用以分隔檢查區 38與化學反應段392,以避免化學反應段392內的化學藥液滲流入檢查區 38內。化學反應段392形成一用以供第一輸送機構51所輸送的承載治具2穿過的第三藥液槽394,第三藥液槽394容置有用以供承載治具2浸泡的第三藥液395。第三藥液槽394前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。在本實施例中,第三藥液395為剝銀劑,其用以去除各晶片1的金屬保護層14(如圖2)。化學反應段392包含多個設置於第三藥液槽394內並沿第一輸送方向D1相間隔且上下交錯排列的第三藥液噴頭396。該等第三藥液噴頭396中的一部分朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的第三藥液395,而另一部分則是朝下對晶片1噴出水刀形式的第三藥液395。Referring to FIG. 24, the overall structure of the removed area 39 is the same as the structure of the etched area 32 of FIG. 15. The removed area 39 includes a separation section 391, a chemical reaction section 392 on the downstream side of the separation section 391, and a chemical reaction section 392吹干段393 on the downstream side. The separating section 391 is located on the downstream side of the inspection area 38 (see FIG. 11 ), and is used to separate the inspection area 38 and the chemical reaction section 392 to prevent the chemical liquid in the chemical reaction section 392 from seeping into the inspection area 38. The chemical reaction section 392 forms a third chemical liquid tank 394 through which the carrying jig 2 conveyed by the first conveying mechanism 51 passes. The third chemical liquid tank 394 accommodates a third liquid tank immersed for carrying the jig 2药液395. Two solid rollers 515 and two liquid cutting rollers 516 are also arranged at the front and rear ends of the third chemical liquid tank 394. In this embodiment, the third chemical solution 395 is a silver stripping agent, which is used to remove the metal protective layer 14 of each wafer 1 (see FIG. 2 ). The chemical reaction section 392 includes a plurality of third chemical liquid spray heads 396 disposed in the third chemical liquid tank 394 and spaced along the first conveying direction D1 and alternately arranged up and down. A part of the third chemical liquid spray heads 396 sprays the third chemical liquid 395 in the form of a water jet upward on the wafer 1 (see FIG. 7) on the carrier jig 2, and the other part sprays water on the wafer 1 downward The third medicine liquid 395 in the form of a knife.

參閱圖24及圖25,吹乾段393包含位於第三藥液槽394下游側的兩對第三噴頭397及兩個第三側噴嘴398。兩對第三噴頭397沿第一輸送方向D1相間隔排列,每一對的兩個第三噴頭397沿上下方向Z相間隔。各第三噴頭397的結構及設置方式與第一噴頭327 (如圖15)的結構及設置方式相同,下方第三噴頭397呈傾斜地朝上並朝前噴氣,上方第三噴頭397則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第三噴頭397能對晶片1(如圖7)噴氣以移除晶片1上的第三藥液395。各第三側噴嘴398的結構及設置方式與第一側噴嘴328 (如圖15)的結構及設置方式相同。兩個第三側噴嘴398沿左右方向Y相間隔,兩個第三側噴嘴398其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第三藥液395。Referring to FIGS. 24 and 25, the drying section 393 includes two pairs of third spray heads 397 and two third side nozzles 398 on the downstream side of the third chemical liquid tank 394. The two pairs of third nozzles 397 are arranged at intervals in the first conveying direction D1, and the two third nozzles 397 of each pair are arranged at intervals in the vertical direction Z. The structure and arrangement of each third nozzle 397 are the same as the structure and arrangement of the first nozzle 327 (see FIG. 15). The lower third nozzle 397 is inclined upward and jets forward, and the upper third nozzle 397 is inclined. Jet down and forward. As a result, the third nozzle 397 can jet the wafer 1 (see FIG. 7) to remove the third chemical liquid 395 on the wafer 1. The structure and arrangement of each third-side nozzle 398 are the same as the structure and arrangement of the first-side nozzle 328 (see FIG. 15). The two third side nozzles 398 are spaced apart in the left-right direction Y, and one of the two third side nozzles 398 is lateral to the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left jet direction D3 Jetting, and the other one is jetting the wafer 1 on the carrier jig 2 laterally along the right jet direction D4, thereby removing the third chemical liquid 395 on the wafer 1.

參閱圖26,第三清洗區40的結構與圖18的第一清洗區33的結構類似,差異在於第三清洗區40少了如第一清洗區33的第二清洗段332及第三清洗段333(如圖18)。第三清洗區40包括一位於吹乾段393(如圖24)下游側的第一清洗段401,及一位於第一清洗段401下游側的第二清洗段402。第一清洗段401包含兩個沿上下方向Z相間隔的第一噴水頭403,及兩個沿上下方向Z相間隔且位於第一噴水頭403下游側的第一噴氣頭404。各第一噴水頭403的結構與第一噴水頭335(如圖18)的結構相同。兩個第一噴水頭403其中之一朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的水405,而其中另一則是朝下對晶片1噴出水刀形式的水405,藉此,以對晶片1進行第一道清洗。各第一噴氣頭404的結構及設置方式與第一噴氣頭336(如圖18)的結構及設置方式相同,下方第一噴氣頭404呈傾斜地朝上並朝前噴氣,上方第一噴氣頭404則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭404能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水405。Referring to FIG. 26, the structure of the third cleaning area 40 is similar to the structure of the first cleaning area 33 of FIG. 18, the difference is that the third cleaning area 40 is less like the second cleaning section 332 and the third cleaning section of the first cleaning area 33 333 (Figure 18). The third cleaning zone 40 includes a first cleaning section 401 located downstream of the drying section 393 (see FIG. 24), and a second cleaning section 402 located downstream of the first cleaning section 401. The first cleaning section 401 includes two first spray heads 403 spaced apart in the vertical direction Z, and two first spray heads 404 spaced apart in the vertical direction and located on the downstream side of the first spray head 403. The structure of each first water jet head 403 is the same as the structure of the first water jet head 335 (see FIG. 18). One of the two first water jet heads 403 sprays water 405 in the form of a water jet upward to the wafer 1 (see FIG. 7) on the jig 2 and the other jets water in the form of a water jet downward to the wafer 1 405, by which the first cleaning of the wafer 1 is performed. The structure and arrangement of each first jet head 404 are the same as the structure and arrangement of the first jet head 336 (see FIG. 18). The lower first jet head 404 jets obliquely upward and forward, and the upper first jet head 404 It is inclined downward and jets forward. In this way, the aforementioned first jetting head 404 can jet the wafer 1 on the carrying jig 2 conveyed by the first conveying mechanism 51 to remove the water 405 on the wafer 1.

參閱圖26及圖27,第二清洗段402包含多對沿第一輸送方向D1相間隔排列的噴灑件406、兩對位於噴灑件406下游側的第二噴氣頭407,及兩個位於噴灑件406下游側的側噴氣嘴408。各噴灑件406的結構及設置方式與第二噴灑件345(如圖18)的結構及設置方式相同。每一對的兩個噴灑件406沿上下方向Z相間隔,其中,下方噴灑件406用以朝上對晶片1(如圖7)噴灑水409,而上方噴灑件406則用以朝下對晶片1噴灑水409。藉此,使得前述噴灑件406能對晶片1進行第二道清洗。Referring to FIGS. 26 and 27, the second cleaning section 402 includes a plurality of pairs of spray elements 406 spaced apart along the first conveying direction D1, two pairs of second jet heads 407 located downstream of the spray elements 406, and two spray elements The side jet nozzle 408 on the downstream side of 406. The structure and arrangement of each spraying member 406 are the same as the structure and arrangement of the second spraying member 345 (see FIG. 18). The two spraying members 406 of each pair are spaced apart in the vertical direction Z, wherein the lower spraying member 406 is used to spray water 409 upwards on the wafer 1 (see FIG. 7), and the upper spraying member 406 is used to downwardly spray the wafers 1Spray water 409. In this way, the aforementioned spraying member 406 can perform the second cleaning of the wafer 1.

兩對第二噴氣頭407沿第一輸送方向D1相間隔排列,每一對的兩個第二噴氣頭407沿上下方向Z相間隔。各第二噴氣頭407的結構及設置方式與第四噴氣頭346(如圖18)的結構及設置方式相同,下方第二噴氣頭407呈傾斜地朝上並朝前對晶片1噴氣,上方第二噴氣頭407則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第二噴氣頭407所噴出的壓縮氣體能移除晶片1上的水409。各側噴氣嘴408的結構及設置方式與側噴氣嘴347(如圖19)的結構及設置方式相同。兩個側噴氣嘴408沿左右方向Y相間隔,兩個側噴氣嘴408其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水409。Two pairs of second jet heads 407 are spaced apart along the first conveying direction D1, and two pairs of second jet heads 407 of each pair are spaced apart in the up-down direction Z. The structure and arrangement of each second jet head 407 is the same as that of the fourth jet head 346 (see FIG. 18). The lower second jet head 407 jets the wafer 1 obliquely upward and forward, and the second The jet head 407 jets the wafer 1 obliquely downward and forward. In this way, the compressed gas jetted from the second jet head 407 can remove the water 409 on the wafer 1. The structure and arrangement of each side air nozzle 408 are the same as the structure and arrangement of the side air nozzle 347 (see FIG. 19). The two side jet nozzles 408 are spaced apart in the left-right direction Y, and one of the two side jet nozzles 408 jets the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 laterally along the left jet direction D3. The other one is to laterally jet the wafer 1 on the carrier jig 2 along the right jet direction D4, thereby removing the water 409 on the wafer 1.

參閱圖28,中和區41整體結構與圖15的蝕刻區32結構類似,中和區41包括一分隔段411、一位於分隔段411下游側的化學反應段412,及一位於化學反應段412下游側的吹乾段413。分隔段411位於第二清洗段402(如圖26)下游側,用以分隔第二清洗段402與化學反應段412,以避免化學反應段412內的化學藥液滲流入第二清洗段402內。化學反應段412形成一用以供第一輸送機構51所輸送的承載治具2穿過的第四藥液槽414,第四藥液槽414容置有用以供承載治具2浸泡的第四藥液415。第四藥液槽414前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。在本實施例中,第四藥液415為中和劑,其用以中和去除各晶片1的金屬導熱層13(如圖2)上所形成的氧化物。化學反應段412包含多個設置於第四藥液槽414內並沿第一輸送方向D1相間隔且上下交錯排列的第四藥液噴頭416。該等第四藥液噴頭416中的一部分朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的第四藥液415,而另一部分則是朝下對晶片1噴出水刀形式的第四藥液415。Referring to FIG. 28, the overall structure of the neutralization zone 41 is similar to the structure of the etching zone 32 of FIG. 15. The neutralization zone 41 includes a separation section 411, a chemical reaction section 412 on the downstream side of the separation section 411, and a chemical reaction section 412吹干段413 on the downstream side. The separation section 411 is located on the downstream side of the second cleaning section 402 (see FIG. 26) to separate the second cleaning section 402 and the chemical reaction section 412 to prevent the chemical liquid in the chemical reaction section 412 from seeping into the second cleaning section 402 . The chemical reaction section 412 forms a fourth chemical liquid tank 414 through which the carrying jig 2 conveyed by the first conveying mechanism 51 passes. The fourth chemical liquid tank 414 accommodates a fourth liquid tank immersed by the carrying jig 2药液415. Two solid rollers 515 and two liquid cutting rollers 516 are also arranged at the front and rear ends of the fourth chemical liquid tank 414. In the present embodiment, the fourth chemical solution 415 is a neutralizing agent, which is used to neutralize and remove the oxide formed on the metal thermal conductive layer 13 (as shown in FIG. 2) of each wafer 1. The chemical reaction section 412 includes a plurality of fourth chemical liquid spray heads 416 disposed in the fourth chemical liquid tank 414 and spaced along the first conveying direction D1 and staggered up and down. A part of the fourth chemical liquid spray heads 416 upward sprays the fourth chemical liquid 415 in the form of a water jet to the wafer 1 (see FIG. 7) on the carrier jig 2, and the other part sprays water downward to the wafer 1 The fourth medicine liquid 415 in the form of a knife.

參閱圖28及圖29,吹乾段413包含位於第四藥液槽414下游側的兩對第四噴頭417及兩個第四側噴嘴418。兩對第四噴頭417沿第一輸送方向D1相間隔排列,每一對的兩個第四噴頭417沿上下方向Z相間隔。各第四噴頭417的結構及設置方式與第一噴頭327(如圖15)的結構及設置方式相同,下方第四噴頭417呈傾斜地朝上並朝前噴氣,上方第四噴頭417則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第四噴頭417能對晶片1(如圖7)噴氣以移除晶片1上的第四藥液415。各第四側噴嘴418的結構及設置方式與第一側噴嘴328(如圖17)的結構及設置方式相同。兩個第四側噴嘴418沿左右方向Y相間隔,兩個第四側噴嘴418其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的第四藥液415。Referring to FIGS. 28 and 29, the drying section 413 includes two pairs of fourth spray heads 417 and two fourth side nozzles 418 on the downstream side of the fourth chemical liquid tank 414. The two pairs of fourth heads 417 are arranged at intervals in the first conveying direction D1, and the two fourth heads 417 of each pair are spaced at intervals in the vertical direction Z. The structure and arrangement of each fourth nozzle 417 are the same as the structure and arrangement of the first nozzle 327 (as shown in FIG. 15). The lower fourth nozzle 417 is inclined upward and jets forward, and the upper fourth nozzle 417 is inclined. Jet down and forward. As a result, the aforementioned fourth shower head 417 can jet the wafer 1 (see FIG. 7) to remove the fourth chemical solution 415 on the wafer 1. The structure and arrangement of each fourth side nozzle 418 are the same as the structure and arrangement of the first side nozzle 328 (see FIG. 17). The two fourth side nozzles 418 are spaced in the left-right direction Y, and one of the two fourth side nozzles 418 is the side of the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 along the left jet direction D3 Jetting, and the other one is jetting the wafer 1 on the carrier 2 laterally along the right jet direction D4, thereby removing the fourth chemical liquid 415 on the wafer 1.

參閱圖30,第四清洗區42的結構與圖22的第二清洗區36結構相同。第四清洗區42包括一位於吹乾段413 (如圖28)下游側的第一清洗段421、一位於第一清洗段421下游側的第二清洗段422,及一位於第二清洗段422下游側的第三清洗段423。第一清洗段421包含兩個沿上下方向Z相間隔的第一噴水頭424,及兩個沿上下方向Z相間隔且位於第一噴水頭424下游側的第一噴氣頭425。各第一噴水頭424的結構與第一噴水頭364(如圖22)的結構相同。兩個第一噴水頭424其中之一朝上對承載治具2上的晶片1(如圖7)噴出水刀形式的水426,而其中另一則是朝下對晶片1噴出水刀形式的水426,藉此,以對晶片1進行第一道清洗。各第一噴氣頭425的結構及設置方式與第一噴氣頭365(如圖22)的結構及設置方式相同,下方第一噴氣頭425呈傾斜地朝上並朝前噴氣,上方第一噴氣頭425則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第一噴氣頭425能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水426。Referring to FIG. 30, the structure of the fourth cleaning area 42 is the same as the structure of the second cleaning area 36 of FIG. The fourth cleaning zone 42 includes a first cleaning section 421 located downstream of the drying section 413 (see FIG. 28), a second cleaning section 422 located downstream of the first cleaning section 421, and a second cleaning section 422 The third cleaning section 423 on the downstream side. The first cleaning section 421 includes two first water jet heads 424 spaced apart in the vertical direction Z, and two first gas jet heads 425 spaced apart in the vertical direction and located on the downstream side of the first water spray head 424. The structure of each first water jet head 424 is the same as the structure of the first water jet head 364 (see FIG. 22). One of the two first water spray heads 424 sprays water 426 in the form of a waterjet upward toward the wafer 1 (see FIG. 7) on the carrier fixture 2, and the other sprays water in the form of a waterjet downward toward the wafer 1 426, thereby performing the first cleaning of the wafer 1. The structure and arrangement of each first jet head 425 are the same as the structure and arrangement of the first jet head 365 (see FIG. 22). The lower first jet head 425 jets obliquely upward and forward, and the upper first jet head 425 It is inclined downward and jets forward. In this way, the aforementioned first jetting head 425 can jet the wafer 1 on the carrying jig 2 conveyed by the first conveying mechanism 51 to remove the water 426 on the wafer 1.

第二清洗段422形成有一用以供第一輸送機構51所輸送的承載治具2穿過的水槽427,水槽427內容置有用以供承載治具2浸泡用以清洗晶片1的水428。水槽427前後兩端同樣配置有兩個實心滾輪515,及兩個液切滾輪516。第二清洗段422包含多個設置於水槽427內並沿第一輸送方向D1相間隔且上下交錯排列的第二噴水頭429,及兩個沿上下方向Z相間隔且位於水槽427下游側的第二噴氣頭430。該等第二噴水頭429中的一部分朝上對承載治具2上的晶片1噴出水刀形式的水428,而另一部分則是朝下對晶片1噴出水刀形式的水428,藉此,以對晶片1進行第二道清洗。各第二噴氣頭430的結構及設置方式與第二噴氣頭370(如圖22)的結構及設置方式相同,下方第二噴氣頭430呈傾斜地朝上並朝前噴氣,上方第二噴氣頭430則是呈傾斜地朝下並朝前噴氣。藉此,使得前述第二噴氣頭430能對第一輸送機構51所輸送的承載治具2上的晶片1噴氣以移除晶片1上的水428。The second cleaning section 422 is formed with a water tank 427 for the carrier jig 2 conveyed by the first conveying mechanism 51 to pass through. The water tank 427 contains water 428 for the carrier jig 2 to soak for cleaning the wafer 1. Two solid rollers 515 and two liquid cutting rollers 516 are also arranged at the front and rear ends of the water tank 427. The second cleaning section 422 includes a plurality of second water jet heads 429 disposed in the water tank 427 and spaced along the first conveying direction D1 and staggered up and down, and two second water jet heads spaced along the vertical direction Z and located on the downstream side of the water tank 427 Two jet heads 430. A part of the second water jet heads 429 sprays water 428 in the form of a water jet toward the wafer 1 on the carrier 2 upward, and another part sprays water 428 in the form of a water jet toward the wafer 1 downward, thereby, In order to perform the second cleaning of the wafer 1. The structure and arrangement of each second jet head 430 are the same as the structure and arrangement of the second jet head 370 (see FIG. 22). The lower second jet head 430 jets obliquely upward and forward, and the upper second jet head 430 It is inclined downward and jets forward. In this way, the aforementioned second jet head 430 can jet the wafer 1 on the carrying jig 2 conveyed by the first conveying mechanism 51 to remove the water 428 on the wafer 1.

參閱圖30及圖31,第三清洗段423包含多對沿第一輸送方向D1相間隔排列的噴灑件431、兩對位於噴灑件431下游側的第三噴氣頭432,及兩個位於噴灑件431下游側的側噴氣嘴433。各噴灑件431的結構及設置方式與噴灑件370(如圖22)的結構及設置方式相同。每一對的兩個噴灑件431沿上下方向Z相間隔,其中,下方噴灑件431用以朝上對晶片1(如圖7)噴灑水434,而上方噴灑件431則用以朝下對晶片1噴灑水434。藉此,使得前述噴灑件431能對晶片1進行第三道清洗。Referring to FIGS. 30 and 31, the third cleaning section 423 includes a plurality of pairs of spray elements 431 arranged at intervals along the first conveying direction D1, two pairs of third jet heads 432 located downstream of the spray elements 431, and two spray elements The side air nozzle 433 on the downstream side of 431. The structure and arrangement of each spraying member 431 are the same as the structure and arrangement of the spraying member 370 (see FIG. 22). The two spray members 431 of each pair are spaced apart in the vertical direction Z, wherein the lower spray member 431 is used to spray water 434 upward to the wafer 1 (see FIG. 7), and the upper spray member 431 is used to face the wafer downward 1Spray water 434. Thereby, the aforementioned spraying member 431 can perform the third cleaning of the wafer 1.

兩對第三噴氣頭432沿第一輸送方向D1相間隔排列,每一對的兩個第三噴氣頭432沿上下方向Z相間隔。各第三噴氣頭432的結構及設置方式與第三噴氣頭372(如圖22)的結構及設置方式相同,下方第三噴氣頭432呈傾斜地朝上並朝前對晶片1噴氣,上方第三噴氣頭432則是呈傾斜地朝下並朝前對晶片1噴氣。藉此,使得前述第三噴氣頭432所噴出的壓縮氣體能移除晶片1上的水434。各側噴氣嘴433的結構及設置方式與側噴氣嘴373(如圖23)的結構及設置方式相同。兩個側噴氣嘴433沿左右方向Y相間隔,兩個側噴氣嘴433其中之一是沿著左噴氣方向D3對第一輸送機構51所輸送的承載治具2上的晶片1側向噴氣,而其中另一是沿著右噴氣方向D4對承載治具2上的晶片1側向噴氣,藉此,以移除晶片1上的水434。The two pairs of third jet heads 432 are arranged at intervals in the first conveying direction D1, and the two third jet heads 432 of each pair are spaced at intervals in the vertical direction Z. The structure and arrangement of each third jet head 432 are the same as the structure and arrangement of the third jet head 372 (see FIG. 22). The lower third jet head 432 jets the wafer 1 obliquely upward and forward, and the upper third The jet head 432 jets the wafer 1 obliquely downward and forward. In this way, the compressed gas ejected from the third jet head 432 can remove the water 434 on the wafer 1. The structure and installation method of each side air nozzle 433 are the same as the structure and installation method of the side air nozzle 373 (see FIG. 23). The two side jet nozzles 433 are spaced apart in the left-right direction Y, and one of the two side jet nozzles 433 jets the wafer 1 on the carrier jig 2 conveyed by the first conveying mechanism 51 laterally along the left jet direction D3. The other one is to laterally jet the wafer 1 on the carrier jig 2 along the right jet direction D4, thereby removing the water 434 on the wafer 1.

參閱圖32,乾燥區44包括一位於第三清洗段423 (如圖30)下游側的吹乾段441,及一位於吹乾段441下游側的烘乾段442。吹乾段441包含多對沿第一輸送方向D1相間隔排列的第一吹風件443。每一對的兩個第一吹風件443沿上下方向Z相間隔,其中,下方第一吹風件443用以朝上對晶片1(如圖7)吹出風刀形式的壓縮風,而上方第一吹風件443則用以朝下對晶片1吹出風刀形式的壓縮風。藉此,以吹乾承載治具2上的晶片1。烘乾段442包含多對沿第一輸送方向D1相間隔且上下交錯排列的排列的第二吹風件444。該等第二吹風件444中的一部分朝上對承載治具2上的晶片1吹出風刀形式的壓縮風,而另一部分則是朝下對晶片1吹出風刀形式的壓縮風,藉此,以烘乾承載治具2上的晶片1。在本實施例中,第一吹風件443所吹出的壓縮風的溫度是例如等於或小於60℃,而第二吹風件444所吹出的壓縮風的溫度是例如介於85~90℃。Referring to FIG. 32, the drying zone 44 includes a drying section 441 located downstream of the third cleaning section 423 (see FIG. 30), and a drying section 442 located downstream of the drying section 441. The drying section 441 includes a plurality of pairs of first blowing members 443 arranged at intervals in the first conveying direction D1. The two first blowing members 443 of each pair are spaced apart in the vertical direction Z, wherein the lower first blowing member 443 is used to blow compressed air in the form of an air knife upward toward the wafer 1 (see FIG. 7), and the upper first The blower 443 blows compressed air in the form of an air knife toward the wafer 1 downward. In this way, the wafer 1 on the carrier jig 2 is blow dried. The drying section 442 includes a plurality of pairs of second blowing members 444 spaced along the first conveying direction D1 and staggered up and down. A part of the second blowing members 444 blows compressed air in the form of an air knife toward the wafer 1 on the carrier 2 upward, and another part blows compressed air in the form of an air knife toward the wafer 1 downward, thereby, To dry the wafer 1 on the carrier jig 2. In the present embodiment, the temperature of the compressed air blown by the first blowing element 443 is, for example, equal to or lower than 60°C, and the temperature of the compressed air blown by the second blowing element 444 is, for example, 85 to 90°C.

參閱圖33、圖34及圖35,移載裝置6位於機體3的後端302並包括一位於乾燥區44下游側的暫存機構61,及一位於暫存機構61下游側的橫移機構62。暫存機構61包含一第一輸送單元611,及一升降單元612。第一輸送單元611對應於第一輸送機構51的出料後端512,並具有多個沿第一輸送方向D1相間隔排列第一輸送輪613。該等第一輸送輪613用以承接由出料後端512所輸出的承載治具2(如圖32),並能沿第一輸送方向D1輸送承載治具2移動。升降單元612包括兩個導桿614、一滑動架615、多對承托桿616,及一第一驅動總成617。兩導桿614沿第一輸送方向D1相間隔排列,各導桿614的軸向沿上下方向Z延伸。滑動架615可滑動地連接於兩導桿614。多對承托桿616設置於滑動架615上並沿上下方向Z相間隔排列,每一對的兩個承托桿616沿前後方向X相間隔。各承托桿616可通過對應的兩個第一輸送輪613之間而沿上下方向Z移動,使得各對承托桿616能將位在第一輸送輪613上的承載治具2往上抬升以承托承載治具2,或者是將所承托的承載治具2放置於第一輸送輪613上。第一驅動總成617與滑動架615連接用以驅動滑動架615沿上下方向Z向上或向下移動。Referring to FIGS. 33, 34 and 35, the transfer device 6 is located at the rear end 302 of the machine body 3 and includes a temporary storage mechanism 61 on the downstream side of the drying zone 44 and a lateral movement mechanism 62 on the downstream side of the temporary storage mechanism 61 . The temporary storage mechanism 61 includes a first conveying unit 611, and a lifting unit 612. The first conveying unit 611 corresponds to the discharge rear end 512 of the first conveying mechanism 51, and has a plurality of first conveying wheels 613 arranged at intervals in the first conveying direction D1. The first conveying wheels 613 are used to receive the load-bearing jig 2 (as shown in FIG. 32) output from the discharge rear end 512, and can move the load-bearing jig 2 along the first conveying direction D1. The lifting unit 612 includes two guide rods 614, a sliding frame 615, multiple pairs of support rods 616, and a first driving assembly 617. The two guide rods 614 are arranged at intervals along the first conveying direction D1, and the axial direction of each guide rod 614 extends in the vertical direction Z. The sliding frame 615 is slidably connected to the two guide rods 614. A plurality of pairs of support rods 616 are disposed on the sliding frame 615 and are arranged at intervals in the vertical direction Z, and two support rods 616 of each pair are spaced apart in the front-rear direction X. Each supporting rod 616 can move in the vertical direction Z through the corresponding two first conveying wheels 613, so that each pair of supporting rods 616 can lift the supporting jig 2 located on the first conveying wheel 613 upward The supporting jig 2 is supported, or the supported supporting jig 2 is placed on the first conveying wheel 613. The first driving assembly 617 is connected to the sliding frame 615 to drive the sliding frame 615 to move up or down in the up-down direction Z.

橫移機構62包含一第二輸送單元621,及一橫移單元622。第二輸送單元621包括多個沿第一輸送方向D1相間隔排列第二輸送輪623,該等第二輸送輪623用以承接由第一輸送單元611所輸出的承載治具2並能將其輸出至第二輸送機構52。橫移單元622包括一導軌624、一滑動件625,及一第二驅動總成626。導軌624呈長形且其長向沿左右方向Y延伸。滑動件625可滑動地連接於導軌624上並能沿左右方向Y滑動,滑動件625連接在第二輸送單元621底端。第二驅動總成626與滑動件625連接用以驅動滑動件625沿左右方向Y滑動,使得滑動件625能帶動第二輸送單元621在一對齊於第一輸送單元611的第一位置(如圖35),及一對齊於入料後端521的第二位置(如圖38)之間移動。當第二輸送單元621在第一位置時,第二輸送單元621能承接由第一輸送單元611所輸出的承載治具2。當第二輸送單元621在第二位置時,第二輸送單元621能將承接的承載治具2輸送至第二輸送機構52。藉此,使得第二輸送機構52能沿第二輸送方向D2(如圖10)輸送承載治具2於回流區45內移動,並經由出料前端522(如圖10)出料。The traverse mechanism 62 includes a second conveying unit 621 and a traverse unit 622. The second conveying unit 621 includes a plurality of second conveying wheels 623 arranged at intervals along the first conveying direction D1. The second conveying wheels 623 are used to receive the bearing jig 2 output by the first conveying unit 611 and can Output to the second conveying mechanism 52. The traverse unit 622 includes a guide rail 624, a sliding member 625, and a second driving assembly 626. The guide rail 624 has an elongated shape and its longitudinal direction extends in the left-right direction Y. The sliding member 625 is slidably connected to the guide rail 624 and can slide in the left-right direction Y, and the sliding member 625 is connected to the bottom end of the second conveying unit 621. The second driving assembly 626 is connected to the sliding member 625 to drive the sliding member 625 to slide in the left-right direction Y, so that the sliding member 625 can drive the second conveying unit 621 at a first position aligned with the first conveying unit 611 (see FIG. 35), and a second position (see FIG. 38) aligned with the rear end 521 of the feeding. When the second conveying unit 621 is in the first position, the second conveying unit 621 can receive the carrying jig 2 output by the first conveying unit 611. When the second conveying unit 621 is in the second position, the second conveying unit 621 can convey the received bearing jig 2 to the second conveying mechanism 52. As a result, the second conveying mechanism 52 can move the carrying jig 2 in the second conveying direction D2 (see FIG. 10) to move in the recirculation zone 45 and discharge through the discharge front end 522 (see FIG. 10 ).

以下針對濕式處理設備300的處理方法進行說明:The following describes the processing method of the wet processing device 300:

參閱圖36,本實施例的濕式處理設備300的處理方法包含下述步驟:輸送步驟S1、濕潤步驟S2、蝕刻步驟S3、第一清洗步驟S4、去氧化步驟S5、第二清洗步驟S6、移除步驟S7、第三清洗步驟S8、中和步驟S9、第四清洗步驟S10、乾燥步驟S11、移載步驟S12,以及回流步驟S13。Referring to FIG. 36, the processing method of the wet processing apparatus 300 of this embodiment includes the following steps: conveying step S1, wetting step S2, etching step S3, first cleaning step S4, deoxidizing step S5, second cleaning step S6, The removal step S7, the third cleaning step S8, the neutralization step S9, the fourth cleaning step S10, the drying step S11, the transfer step S12, and the reflow step S13.

參閱圖10及圖36,在輸送步驟S1中,先將多個承載治具2依序經由入料前端 511入料至第一輸送機構51上,隨後,透過輸送裝置5的第一輸送機構51沿第一輸送方向D1輸送各承載治具2移動。Referring to FIGS. 10 and 36, in the conveying step S1, a plurality of carrying jigs 2 are sequentially fed onto the first conveying mechanism 51 through the feeding front end 511, and then, through the first conveying mechanism 51 of the conveying device 5 Each carrying jig 2 is transported along the first transport direction D1 to move.

參閱圖7、圖12及圖13,在濕潤步驟S2中,經由入料前端 511入料至第一輸送機構51上的承載治具2會位在濕潤區31的入料段311。隨後,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至濕潤段312並於其內移動。濕潤段312的下方噴灑件314朝上噴出的水310會經由承載盤21的通孔215噴至晶片1,而上方噴灑件314朝下噴出的水310則會經由蓋板23的第一開孔230及第二開孔235噴至晶片1。藉此,除了能預先清洗晶片1以將其上的灰塵或髒汙沖掉外,還能對晶片1的各引腳12(如圖6)及金屬保護層14產生濕潤作用,使晶片1在後續步驟中各引腳12及金屬保護層14與化學藥液的反應速度能變快。Referring to FIG. 7, FIG. 12 and FIG. 13, in the wetting step S2, the loading jig 2 fed onto the first conveying mechanism 51 via the feeding front end 511 is located in the feeding section 311 of the wetting area 31. Subsequently, the first conveying mechanism 51 conveys the carrying jig 2 to the moistening section 312 in the first conveying direction D1 and moves therein. The water 310 sprayed upward by the lower spray member 314 of the wetting section 312 will be sprayed to the wafer 1 through the through hole 215 of the carrier plate 21, and the water 310 sprayed downward by the upper spray member 314 will pass the first opening of the cover plate 23 230 and the second opening 235 are sprayed onto the wafer 1. In this way, in addition to pre-cleaning the wafer 1 to wash away the dust or dirt on it, it can also produce a wetting effect on the pins 12 of the wafer 1 (see FIG. 6) and the metal protective layer 14 so that the wafer 1 In subsequent steps, the reaction speed of each pin 12 and the metal protective layer 14 with the chemical liquid can become faster.

參閱圖7、圖12及圖14,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段313並於其內移動。首先,鄰近濕潤段312的下方噴氣頭315傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水310由第一開孔230及第二開孔235排出。隨後,鄰近濕潤段312的上方噴氣頭315傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水310刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水310由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離濕潤段312的另一對噴氣頭315也會依照前述方式對晶片1進行第二道吹乾作業。Referring to FIG. 7, FIG. 12 and FIG. 14, then, the first conveying mechanism 51 conveys the carrying jig 2 to the drying section 313 along the first conveying direction D1 and moves therein. First, the gas jetted downward from the downward jet head 315 adjacent to the wetting section 312 is sprayed onto the wafer 1 through the through hole 215 and drives the water 310 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected from the upper jet head 315 adjacent to the wetting section 312 obliquely downward will scrape off the water 310 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and The second opening 235 is sprayed onto the wafer 1 and drives the water 310 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of jet heads 315 away from the wet section 312 will also perform a second drying operation on the wafer 1 in the aforementioned manner.

參閱圖7、圖8、圖9及圖14,另一方面,其中一個側噴氣嘴316沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴316沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上的水310(如圖13)由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水310完全吹除,以避免晶片1上的水310帶到下一站的蝕刻區32進而影響或稀釋第一藥液325(如圖15)。7, FIG. 8, FIG. 9 and FIG. 14, on the other hand, the gas ejected by one side jet nozzle 316 along the left jet direction D3 will be sprayed to the wafer 1 via the corresponding side flow channel 24, while the other side The gas jetted by the jet nozzle 316 along the right jet direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can drive the water 310 (see FIG. 13) on the wafer 1 from the through hole 215 or the end flow channel 25 Discharge to perform the third drying operation on the wafer 1. In this way, it can be ensured that the water 310 on each wafer 1 is completely blown off, so as to avoid that the water 310 on the wafer 1 is brought to the etching zone 32 of the next station to affect or dilute the first chemical solution 325 (see FIG. 15 ).

參閱圖7、圖8、圖9及圖15,在蝕刻步驟S3中,第一輸送機構51帶動承載治具2經由蝕刻區32的分隔段321進入化學反應段322的第一藥液槽324內。承載治具2於第一藥液槽324內移動的過程中是完全浸泡在第一藥液325內。第一藥液325能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第一藥液噴頭326朝上所噴出的第一藥液325會經由通孔215流至晶片1,而上方第一藥液噴頭326朝下所噴出的第一藥液325會經由第一開孔230及第二開孔235流至晶片1,使得第一藥液325能在承載治具2內順暢地流動。藉此,第一藥液325能充分且確實地與晶片1的各引腳12(如圖6)或者是與晶片1因鋸切所產生的金屬絲產生化學反應並且蝕刻各引腳12或金屬絲,使得兩個相鄰的引腳12之間的距離能夠變大至一預設的長度,或者是將金屬絲移除,以防止晶片1在後續使用時因熱脹冷縮的因素造成金屬絲與另一相鄰引腳12接觸或者是兩個相鄰的引腳12相互接觸,進而導致短路的情形產生。Referring to FIG. 7, FIG. 8, FIG. 9 and FIG. 15, in the etching step S3, the first conveying mechanism 51 drives the carrier jig 2 into the first chemical liquid tank 324 of the chemical reaction section 322 through the partition section 321 of the etching zone 32 . The carrier jig 2 is completely immersed in the first medical liquid 325 during the movement in the first medical liquid tank 324. The first chemical liquid 325 can flow into the wafer 1 in the carrier jig 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the first chemical liquid 325 ejected upward by the lower first chemical liquid spray head 326 flows to the wafer 1 through the through hole 215, and the first chemical liquid 325 ejected downward by the upper first chemical liquid spray head 326 passes through the first An opening 230 and a second opening 235 flow to the wafer 1 so that the first chemical liquid 325 can smoothly flow in the carrier jig 2. Thereby, the first chemical liquid 325 can fully and surely react with each pin 12 of the wafer 1 (as shown in FIG. 6) or the metal wire generated by sawing of the wafer 1 and etch each pin 12 or metal Wire, so that the distance between two adjacent pins 12 can be increased to a predetermined length, or the wire can be removed to prevent the wafer 1 from being used due to thermal expansion and contraction during subsequent use The wire is in contact with another adjacent pin 12 or two adjacent pins 12 are in contact with each other, thereby causing a short circuit.

參閱圖7及圖15,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段323並於其內移動。首先,鄰近化學反應段322的下方第一噴頭327傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的第一藥液325由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段322的上方第一噴頭327傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第一藥液325刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第一藥液325由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段322的另一對第一噴頭327也會依照前述方式對晶片1進行第二道吹乾作業。Referring to FIGS. 7 and 15, next, the first conveying mechanism 51 conveys the carrying jig 2 to the drying section 323 along the first conveying direction D1 and moves therein. First, the gas ejected obliquely upward by the first shower head 327 adjacent to the chemical reaction section 322 will be sprayed to the wafer 1 through the through hole 215 and drive the first chemical liquid 325 on the wafer 1 from the first opening 230 and the second opening The hole 235 is discharged. Subsequently, the gas sprayed by the first spray head 327 above and adjacent to the chemical reaction section 322 obliquely downward will scrape off the first chemical liquid 325 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the An opening 230 and a second opening 235 are sprayed onto the wafer 1 and drive the first chemical liquid 325 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of first shower heads 327 away from the chemical reaction section 322 will also perform a second drying operation on the wafer 1 according to the aforementioned method.

參閱圖7、圖8、圖9及圖17,另一方面,其中一個第一側噴嘴328沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個第一側噴嘴328沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第一藥液325(如圖16)由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第一藥液325完全吹除。Referring to FIGS. 7, 8, 9 and 17, on the other hand, the gas emitted by one of the first side nozzles 328 along the left jet direction D3 is sprayed to the wafer 1 via the corresponding side flow channel 24, while the other The gas ejected by the first side nozzle 328 along the right jet direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can pass the first chemical liquid 325 (see FIG. 16) remaining on the wafer 1 through The hole 215 or the end channel 25 is discharged to perform a third drying operation on the wafer 1. This can ensure that the first chemical solution 325 on each wafer 1 is completely blown off.

參閱圖7及圖18,在第一清洗步驟S4中,第一輸送機構51帶動承載治具2先進入第一清洗區33的第一清洗段331內,第一清洗段331的下方第一噴水頭335朝上噴出的水337會經由通孔215噴至晶片1,而上方第一噴水頭335朝下噴出的水337則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第一藥液325。接著,下方第一噴氣頭336傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水337由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭336傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水337刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水337由通孔215排出,以吹乾晶片1。Referring to FIGS. 7 and 18, in the first cleaning step S4, the first conveying mechanism 51 drives the carrying jig 2 to enter the first cleaning section 331 of the first cleaning area 33 first, and the first water spray below the first cleaning section 331 The water 337 sprayed upward by the head 335 is sprayed to the wafer 1 through the through hole 215, and the water 337 sprayed downward by the upper first spray head 335 is sprayed to the wafer 1 through the first opening 230 and the second opening 235, In order to perform the first cleaning on each wafer 1, the first chemical liquid 325 on each wafer 1 that has been blown dry is washed away. Then, the gas jetted downward from the first jet head 336 obliquely upward will be sprayed to the wafer 1 through the through hole 215 and drive the water 337 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected from the upper first jet head 336 obliquely downward will scrape off the water 337 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening The hole 235 is sprayed to the wafer 1 and drives the water 337 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

之後,第一輸送機構51帶動承載治具2進入第二清洗段332的水槽338內。承載治具2於水槽338內移動的過程中是完全浸泡在水339內。水339能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二噴水頭340朝上所噴出的水339會經由通孔215流至晶片1,而上方第二噴水頭340朝下所噴出的水339會經由第一開孔230及第二開孔235流至晶片1,使得水339能在承載治具2內順暢地流動,以對各晶片1進行第二道清洗。接著,下方第二噴氣頭341傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水339由第一開孔230及第二開孔235排出。上方第二噴氣頭341傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水339刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水339由通孔215排出,以吹乾晶片1。After that, the first conveying mechanism 51 drives the carrying jig 2 into the water tank 338 of the second cleaning section 332. When the carrying jig 2 moves in the water tank 338, it is completely immersed in the water 339. The water 339 can flow into the wafer 1 in the carrier jig 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the water 339 sprayed upward by the lower second water spray head 340 flows to the wafer 1 through the through hole 215, and the water 339 sprayed downward by the upper second water spray head 340 passes through the first opening 230 and the second opening The hole 235 flows to the wafer 1 so that the water 339 can smoothly flow in the carrier jig 2 to perform a second cleaning of each wafer 1. Next, the gas ejected from the second downward air jet head 341 obliquely upward will be sprayed to the wafer 1 through the through hole 215 and drive the water 339 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected from the upper second jet head 341 obliquely downward will scrape off the water 339 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 The water 339 sprayed onto the wafer 1 and driving the water 1 on the wafer 1 is discharged through the through hole 215 to blow dry the wafer 1.

第一輸送機構51接著帶動承載治具2進入第三清洗段333內。第三清洗段333的下方第一噴灑件342朝上噴出的水344會經由通孔215噴至晶片1,而上方第一噴灑件342朝下噴出的水344則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第三道清洗。接著,下方第三噴氣頭343傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水344由第一開孔230及第二開孔235排出。上方第三噴氣頭343傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水344刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水344由通孔215排出,以吹乾晶片1。The first conveying mechanism 51 then drives the carrying jig 2 into the third cleaning section 333. The water 344 sprayed upward from the lower first spraying member 342 of the third cleaning section 333 will be sprayed to the wafer 1 through the through hole 215, and the water 344 sprayed downward from the upper first spraying member 342 will pass the first opening 230 and The second opening 235 is sprayed to the wafer 1 to perform a third cleaning on each wafer 1. Then, the gas ejected by the downward third jet head 343 obliquely upward will be sprayed to the wafer 1 through the through hole 215 and drive the water 344 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected from the upper third jet head 343 tilting downward will scrape off the water 344 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 The water sprayed on the wafer 1 and driving the water 344 on the wafer 1 is discharged from the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖18及圖19,第一輸送機構51接著帶動承載治具2進入第四清洗段334內。第四清洗段334的下方第二噴灑件345朝上噴出的水348會經由通孔215噴至晶片1,而上方第二噴灑件345朝下噴出的水348則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第四道清洗。藉由第一清洗區33的四道清洗機制,能確保將各晶片1上殘留的第一藥液325完全洗淨去除,以避免晶片1上殘留的第一藥液325帶到下一站的去氧化區35進而影響第二藥液355(如圖20)。Referring to FIGS. 7, 8, 18 and 19, the first conveying mechanism 51 then drives the carrying jig 2 into the fourth cleaning section 334. The water 348 sprayed upward by the second spray member 345 below the fourth cleaning section 334 will be sprayed to the wafer 1 through the through hole 215, and the water 348 sprayed downward by the second spray member 345 above will pass through the first opening 230 and The second opening 235 is sprayed to the wafer 1 to perform a fourth cleaning on each wafer 1. The four cleaning mechanisms of the first cleaning area 33 can ensure that the first chemical liquid 325 remaining on each wafer 1 is completely washed and removed, so as to avoid the first chemical liquid 325 remaining on the wafer 1 to be brought to the next station. The deoxidation zone 35 further affects the second chemical solution 355 (see FIG. 20).

鄰近第二噴灑件345的下方第四噴氣頭346傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水348由第一開孔230及第二開孔235排出。鄰近第二噴灑件345的上方第四噴氣頭346傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水348刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水348由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離第二噴灑件345的另一對第四噴氣頭346也會依照前述方式對晶片1進行第二道吹乾作業。The gas ejected from the fourth spray head 346 tilted upwards adjacent to the second spray member 345 is sprayed to the wafer 1 through the through hole 215 and drives the water 348 on the wafer 1 to be discharged from the first opening 230 and the second opening 235 . The gas sprayed by the fourth jet head 346 tilting downwards above the second spraying member 345 will scrape off the water 348 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 are sprayed to the wafer 1 and drive the water 348 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of fourth jet heads 346 away from the second spraying member 345 will also perform a second drying operation on the wafer 1 in the foregoing manner.

另一方面,其中一個側噴氣嘴347沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴347沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水348由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水348完全吹除,以避免晶片1上殘留的水348帶到下一站的去氧化區35進而影響或稀釋第二藥液355。On the other hand, the gas ejected by one side jet nozzle 347 along the left jet direction D3 will be jetted to the wafer 1 via the corresponding side flow channel 24, while the gas jetted by the other side jet nozzle 347 along the right jet direction D4 It will be sprayed onto the wafer 1 through the corresponding side flow channel 24, so that the gas can drive the remaining water 348 on the wafer 1 to be discharged through the through hole 215 or the end flow channel 25, so as to perform a third drying operation on the wafer 1. In this way, it can be ensured that the water 348 on each wafer 1 is completely blown off, so as to avoid that the remaining water 348 on the wafer 1 is brought to the deoxidation zone 35 of the next station to affect or dilute the second chemical liquid 355.

參閱圖7、圖8、圖9及圖20,在去氧化步驟S5中,第一輸送機構51帶動承載治具2經由去氧化區35的分隔段351進入化學反應段352的第二藥液槽354內。承載治具2於第二藥液槽354內移動的過程中是完全浸泡在第二藥液355內。第二藥液355能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二藥液噴頭356朝上所噴出的第二藥液355會經由通孔215流至晶片1,而上方第二藥液噴頭356朝下所噴出的第二藥液355會經由第一開孔230及第二開孔235流至晶片1,使得第二藥液355能在承載治具2內順暢地流動。藉此,第二藥液355能充分且確實地與晶片1的各引腳12(如圖6)產生去氧化作用的化學反應。晶片1經過蝕刻步驟S3後,由於各引腳12與水和氣體接觸會產生局部氧化的狀況,因此,藉由第二藥液355與各引腳12產生去氧化作用,能將各引腳12鈍化為一氧化銅而構成一防護層,以防止各引腳12繼續氧化。Referring to FIGS. 7, 8, 9 and 20, in the deoxidation step S5, the first conveying mechanism 51 drives the carrying jig 2 into the second chemical liquid tank of the chemical reaction section 352 through the partition section 351 of the deoxidation zone 35 Within 354. The carrier jig 2 is completely immersed in the second medical liquid 355 while moving in the second medical liquid tank 354. The second chemical liquid 355 can flow into the wafer 1 in the carrier jig 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the second chemical liquid 355 ejected upward by the lower second chemical liquid spray head 356 flows to the wafer 1 through the through hole 215, and the second chemical liquid 355 ejected downward by the upper second chemical liquid spray head 356 passes through the first An opening 230 and a second opening 235 flow to the wafer 1 so that the second chemical liquid 355 can smoothly flow in the carrier jig 2. In this way, the second chemical solution 355 can fully and surely produce a chemical reaction with each pin 12 of the wafer 1 (see FIG. 6) for deoxidation. After the wafer 1 undergoes the etching step S3, due to the contact between the pins 12 and water and gas, local oxidation may occur. Therefore, the second chemical solution 355 and the pins 12 generate a deoxidation effect, which can The passivation is copper monoxide to form a protective layer to prevent each pin 12 from continuing to oxidize.

參閱圖7及圖20,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段353並於其內移動。首先,鄰近化學反應段352的下方第二噴頭357傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的第二藥液355由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段352的上方第二噴頭357傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第二藥液355刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第二藥液355由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段352的另一對第二噴頭357也會依照前述方式對晶片1進行第二道吹乾作業。Referring to FIGS. 7 and 20, next, the first conveying mechanism 51 conveys the carrying jig 2 to the drying section 353 along the first conveying direction D1 and moves therein. First, the gas ejected from the second spray head 357 tilted upwards adjacent to the chemical reaction section 352 is sprayed to the wafer 1 through the through hole 215 and drives the second chemical liquid 355 on the wafer 1 from the first opening 230 and the second opening The hole 235 is discharged. Subsequently, the gas ejected from the second spray head 357 above the chemical reaction section 352 obliquely and downward will scrape off the second chemical liquid 355 discharged from the first opening 230 and the second opening 235, and at the same time, the gas An opening 230 and a second opening 235 are sprayed onto the wafer 1 and drive the second chemical liquid 355 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of second shower heads 357 away from the chemical reaction section 352 will also perform a second drying operation on the wafer 1 in the foregoing manner.

參閱圖7、圖8、圖9及圖21,另一方面,其中一個第二側噴嘴358沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個第二側噴嘴358沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第二藥液355由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第二藥液355完全吹除。Referring to FIGS. 7, 8, 9 and 21, on the other hand, the gas emitted by one of the second side nozzles 358 along the left jet direction D3 will be sprayed to the wafer 1 via the corresponding side flow channel 24, while the other The gas ejected from the second side nozzle 358 along the right jet direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can flow the second chemical liquid 355 remaining on the wafer 1 from the through hole 215 or the end flow The lane 25 is discharged to perform the third drying operation on the wafer 1. With this, it is possible to ensure that the second chemical liquid 355 on each wafer 1 is completely blown off.

參閱圖7及圖22,在第二清洗步驟S6中,第一輸送機構51帶動承載治具2先進入第二清洗區36的第一清洗段361內,第一清洗段361的下方第一噴水頭364朝上噴出的水366會經由通孔215噴至晶片1,而上方第一噴水頭364朝下噴出的水366則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第二藥液355。接著,下方第一噴氣頭365傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水366由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭365傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水366刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水366由通孔215排出,以吹乾晶片1。Referring to FIGS. 7 and 22, in the second cleaning step S6, the first conveying mechanism 51 drives the carrying jig 2 to enter the first cleaning section 361 of the second cleaning area 36 first, and the first water spray below the first cleaning section 361 The water 366 sprayed upward by the head 364 is sprayed to the wafer 1 through the through hole 215, and the water 366 sprayed downward by the upper first spray head 364 is sprayed to the wafer 1 through the first opening 230 and the second opening 235. In order to perform a first cleaning on each wafer 1, the second chemical liquid 355 on each wafer 1 that has been blown dry is washed away. Then, the gas ejected from the downward first jet head 365 obliquely upward will be sprayed to the wafer 1 through the through hole 215 and drive the water 366 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected from the first jet head 365 tilted downward will scrape off the water 366 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening The hole 235 is sprayed to the wafer 1 and drives the water 366 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

之後,第一輸送機構51帶動承載治具2進入第二清洗段362的水槽367內。承載治具2於水槽367內移動的過程中是完全浸泡在水368內。水368能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二噴水頭369朝上所噴出的水368會經由通孔215流至晶片1,而上方第二噴水頭369朝下所噴出的水368會經由第一開孔230及第二開孔235流至晶片1,使得水368能在承載治具2內順暢地流動,以對各晶片1進行第二道清洗。接著,下方第二噴氣頭370傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水368由第一開孔230及第二開孔235排出。上方第二噴氣頭370傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水368刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水368由通孔215排出,以吹乾晶片1。After that, the first conveying mechanism 51 drives the carrying jig 2 into the water tank 367 of the second cleaning section 362. During the movement of the carrying jig 2 in the water tank 367, it is completely immersed in the water 368. The water 368 can flow into the wafer 1 in the carrier jig 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the water 368 sprayed upward by the lower second water spray head 369 flows to the wafer 1 through the through hole 215, and the water 368 sprayed downward by the upper second water spray head 369 passes through the first opening 230 and the second opening The holes 235 flow to the wafer 1 so that the water 368 can smoothly flow in the carrier jig 2 to perform a second cleaning of each wafer 1. Then, the gas ejected by the downward second air jet head 370 tilting upward will be sprayed to the wafer 1 through the through hole 215 and drive the water 368 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected from the upper second jet head 370 tilting downward will scrape off the water 368 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 The water sprayed on the wafer 1 and driving the water 368 on the wafer 1 is discharged through the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖9、圖22及圖23,第一輸送機構51接著帶動承載治具2進入第三清洗段363內。第三清洗段363的下方噴灑件371朝上噴出的水374會經由通孔215噴至晶片1,而上方噴灑件371朝下噴出的水374則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第三道清洗。藉由第二清洗區36的三道清洗機制,能確保將各晶片1上殘留的第二藥液355完全洗淨去除,以避免晶片1上殘留的第二藥液355帶到下一站的移除區39進而影響第三藥液395(如圖24)。7, 8, 9, 22 and 23, the first conveying mechanism 51 then drives the bearing jig 2 into the third cleaning section 363. The water 374 sprayed upward by the lower spray member 371 of the third cleaning section 363 will be sprayed to the wafer 1 through the through hole 215, and the water 374 sprayed downward by the upper spray member 371 will pass the first opening 230 and the second opening 235 sprays onto the wafer 1 to perform a third cleaning on each wafer 1. The three cleaning mechanisms of the second cleaning area 36 can ensure that the second chemical liquid 355 remaining on each wafer 1 is completely washed and removed, so as to prevent the second chemical liquid 355 remaining on the wafer 1 from being brought to the next station. The removal zone 39 in turn affects the third medical fluid 395 (see FIG. 24).

鄰近噴灑件371的下方第三噴氣頭372傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水374由第一開孔230及第二開孔235排出。鄰近噴灑件371的上方第三噴氣頭372傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水374刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水374由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離噴灑件371的另一對第三噴氣頭372也會依照前述方式對晶片1進行第二道吹乾作業。The gas ejected from the third air jet head 372 adjacent to the spray member 371 obliquely upward will be sprayed to the wafer 1 through the through hole 215 and drive the water 374 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected from the third jet head 372 tilted downwards above the spraying member 371 will scrape off the water 374 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and The second opening 235 is sprayed onto the wafer 1 and drives the water 374 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of third jet heads 372 far from the spray member 371 will also perform a second drying operation on the wafer 1 according to the aforementioned method.

最後,其中一個側噴氣嘴373沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴373沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水374由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水374完全吹除,以避免晶片1上殘留的水374帶到下一站的移除區39進而影響或稀釋第三藥液395。Finally, the gas from one of the side jet nozzles 373 along the left jet direction D3 will be sprayed to the wafer 1 via the corresponding side flow channel 24, while the gas from the other side jet nozzle 373 along the right jet direction D4 will pass through The corresponding side flow channel 24 is sprayed to the wafer 1 so that the gas can drive the remaining water 374 on the wafer 1 to be discharged through the through hole 215 or the end flow channel 25 to perform the third drying operation on the wafer 1. In this way, it can be ensured that the water 374 on each wafer 1 is completely blown off, so as to avoid that the remaining water 374 on the wafer 1 is brought to the removal zone 39 of the next station to affect or dilute the third chemical solution 395.

參閱圖10及圖11,第一輸送機構51接著會帶動承載治具2進入檢查區 38內,工作人員可通過控制第一輸送機構51停止運轉,以將承載治具2取出並檢查各晶片1的引腳12的蝕刻狀況。Referring to FIGS. 10 and 11, the first conveying mechanism 51 will then drive the carrier jig 2 into the inspection area 38. The worker can stop the operation by controlling the first conveying mechanism 51 to take out the carrier jig 2 and inspect each wafer 1 The etching condition of pin 12.

參閱圖7、圖8、圖9及圖24,在移除步驟S7中,第一輸送機構51帶動承載治具2經由移除區39的分隔段391進入化學反應段392的第三藥液槽394內。承載治具2於第三藥液槽394內移動的過程中是完全浸泡在第三藥液395內。第三藥液395能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第三藥液噴頭396朝上所噴出的第三藥液395會經由通孔215流至晶片1,而上方第三藥液噴頭396朝下所噴出的第三藥液395會經由第一開孔230及第二開孔235流至晶片1,使得第三藥液395能在承載治具2內順暢地流動。藉此,第三藥液395能充分且確實地與晶片1的金屬保護層14產生化學反應以去除金屬保護層14,也就是說,移除步驟S7是剝除金屬保護層14的剝銀步驟。Referring to FIGS. 7, 8, 9 and 24, in the removal step S7, the first conveying mechanism 51 drives the carrying jig 2 into the third chemical liquid tank of the chemical reaction section 392 through the separation section 391 of the removal area 39 Within 394. The carrier jig 2 is completely immersed in the third chemical liquid 395 while moving in the third chemical liquid tank 394. The third chemical solution 395 can flow into the wafer 1 in the carrier jig 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the third chemical liquid 395 ejected upward from the lower third chemical liquid spray head 396 flows to the wafer 1 through the through hole 215, and the third chemical liquid 395 ejected downward from the upper third chemical liquid spray head 396 passes through the first An opening 230 and a second opening 235 flow to the wafer 1 so that the third chemical liquid 395 can smoothly flow in the carrier jig 2. Thereby, the third chemical solution 395 can fully and surely generate a chemical reaction with the metal protective layer 14 of the wafer 1 to remove the metal protective layer 14, that is to say, the removing step S7 is a silver stripping step of stripping the metal protective layer 14 .

參閱圖7及圖24,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段393並於其內移動。首先,鄰近化學反應段392的下方第三噴頭397傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的第三藥液395由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段392的上方第三噴頭397傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第三藥液395刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第三藥液395由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段322的另一對第三藥液395也會依照前述方式對晶片1進行第二道吹乾作業。Referring to FIG. 7 and FIG. 24, the first conveying mechanism 51 conveys the bearing jig 2 to the drying section 393 along the first conveying direction D1 and moves therein. First, the gas ejected from the third spray head 397 below the chemical reaction section 392 tilting upward will be sprayed to the wafer 1 through the through hole 215 and drive the third chemical liquid 395 on the wafer 1 from the first opening 230 and the second opening The hole 235 is discharged. Subsequently, the gas ejected from the third nozzle 397 above the chemical reaction section 392 obliquely downward will scrape off the third chemical liquid 395 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the An opening 230 and a second opening 235 are sprayed onto the wafer 1 and drive the third chemical solution 395 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of third chemical solutions 395 away from the chemical reaction section 322 will also perform a second drying operation on the wafer 1 in the foregoing manner.

參閱圖7、圖8、圖9及圖25,另一方面,其中一個第三側噴嘴398沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個第三側噴嘴398沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第三藥液395由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第三藥液395完全吹除。Referring to FIGS. 7, 8, 9 and 25, on the other hand, the gas emitted by one third side nozzle 398 along the left jet direction D3 will be sprayed to the wafer 1 via the corresponding side flow channel 24, while the other The gas ejected from the third side nozzle 398 along the right jet direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can flow the third chemical liquid 395 remaining on the wafer 1 from the through hole 215 or the end flow The lane 25 is discharged to perform the third drying operation on the wafer 1. With this, it is possible to ensure that the third chemical solution 395 on each wafer 1 is completely blown out.

參閱圖7及圖26,在第三清洗步驟S8中,第一輸送機構51帶動承載治具2先進入第三清洗區40的第一清洗段401內,第一清洗段401的下方第一噴水頭403朝上噴出的水405會經由通孔215噴至晶片1,而上方第一噴水頭403朝下噴出的水366則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第三藥液395。接著,下方第一噴氣頭404傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水405由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭404傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水405刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水405由通孔215排出,以吹乾晶片1。Referring to FIGS. 7 and 26, in the third cleaning step S8, the first conveying mechanism 51 drives the carrying jig 2 to enter the first cleaning section 401 of the third cleaning area 40 first, and the first water spray below the first cleaning section 401 The water 405 sprayed upward by the head 403 is sprayed to the wafer 1 through the through hole 215, and the water 366 sprayed downward by the upper first spray head 403 is sprayed to the wafer 1 through the first opening 230 and the second opening 235, In order to perform the first cleaning on each wafer 1, the third chemical liquid 395 on each wafer 1 that has been blown dry is washed away. Next, the gas jetted downward from the first jet head 404 obliquely upward will be sprayed to the wafer 1 through the through hole 215 and drive the water 405 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas ejected from the upper first jet head 404 obliquely downward will scrape off the water 405 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening The hole 235 is sprayed to the wafer 1 and drives the water 405 on the wafer 1 to be discharged through the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖9、圖26及圖27,第一輸送機構51接著帶動承載治具2進入第二清洗段402內。第二清洗段402的下方噴灑件406朝上噴出的水409會經由通孔215噴至晶片1,而上方噴灑件406朝下噴出的水409則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第二道清洗。藉由第三清洗區40的兩道清洗機制,能確保將各晶片1上殘留的第三藥液395完全洗淨去除,以避免晶片1上殘留的第三藥液395帶到下一站的中和區41進而影響第四藥液415(如圖28)。7, 8, 9, 26 and 27, the first conveying mechanism 51 then drives the bearing jig 2 into the second cleaning section 402. The water 409 sprayed upward by the lower spray member 406 of the second cleaning section 402 will be sprayed to the wafer 1 through the through hole 215, and the water 409 sprayed downward by the upper spray member 406 will pass the first opening 230 and the second opening 235 sprays onto the wafer 1 to perform a second cleaning on each wafer 1. The two cleaning mechanisms of the third cleaning area 40 can ensure that the third chemical solution 395 remaining on each wafer 1 is completely washed and removed, so as to prevent the third chemical solution 395 remaining on the wafer 1 from being brought to the next station The neutralization zone 41 in turn affects the fourth medical fluid 415 (see FIG. 28).

鄰近噴灑件406的下方第二噴氣頭407傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水409由第一開孔230及第二開孔235排出。鄰近噴灑件406的上方第二噴氣頭407傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水409刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水409由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離噴灑件406的另一對第二噴氣頭407也會依照前述方式對晶片1進行第二道吹乾作業。The gas ejected obliquely upward by the second air jet head 407 adjacent to the spraying member 406 will be sprayed to the wafer 1 through the through hole 215 and drive the water 409 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas jetted from the second jet head 407 above the spray member 406 at an oblique downward direction will scrape off the water 409 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and The second opening 235 is sprayed to the wafer 1 and drives the water 409 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of second jet heads 407 far from the spraying member 406 will also perform a second drying operation on the wafer 1 according to the aforementioned method.

最後,其中一個側噴氣嘴408沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴408沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水374由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水409完全吹除,以避免晶片1上殘留的水409帶到下一站的中和區41進而影響或稀釋第四藥液415。Finally, the gas from one of the side jet nozzles 408 along the left jet direction D3 will be sprayed to the wafer 1 via the corresponding side flow channel 24, and the gas from the other side jet nozzle 408 along the right jet direction D4 will pass through The corresponding side flow channel 24 is sprayed to the wafer 1 so that the gas can drive the remaining water 374 on the wafer 1 to be discharged through the through hole 215 or the end flow channel 25 to perform the third drying operation on the wafer 1. In this way, it is possible to ensure that the water 409 on each wafer 1 is completely blown off, so as to avoid that the water 409 remaining on the wafer 1 is brought to the neutralization zone 41 of the next station to affect or dilute the fourth chemical solution 415.

參閱圖7、圖8、圖9及圖28,在中和步驟S9中,第一輸送機構51帶動承載治具2經由中和區41的分隔段411進入化學反應段412的第四藥液槽414內。承載治具2於第四藥液槽414內移動的過程中是完全浸泡在第四藥液415內。第四藥液415能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第四藥液噴頭416朝上所噴出的第四藥液415會經由通孔215流至晶片1,而上方第四藥液噴頭416朝下所噴出的第四藥液415會經由第一開孔230及第二開孔235流至晶片1,使得第四藥液415能在承載治具2內順暢地流動。藉此,第四藥液415能充分且確實地與晶片1的金屬導熱層13產生化學中和反應,以中和去除金屬導熱層13上所形成的氧化物。Referring to FIG. 7, FIG. 8, FIG. 9 and FIG. 28, in the neutralization step S9, the first conveying mechanism 51 drives the carrying jig 2 into the fourth chemical liquid tank of the chemical reaction section 412 through the partition section 411 of the neutralization zone 41 Within 414. The carrier jig 2 is completely immersed in the fourth medical liquid 415 during the movement in the fourth medical liquid tank 414. The fourth chemical solution 415 can flow into the wafer 1 in the carrier jig 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the fourth chemical liquid 415 ejected upward from the lower fourth chemical liquid spray head 416 flows to the wafer 1 through the through hole 215, and the fourth chemical liquid 415 ejected downward from the upper fourth chemical liquid spray head 416 passes through the first An opening 230 and a second opening 235 flow to the wafer 1 so that the fourth chemical liquid 415 can flow smoothly in the carrier jig 2. Thereby, the fourth chemical solution 415 can fully and surely generate a chemical neutralization reaction with the metal heat conduction layer 13 of the wafer 1 to neutralize and remove the oxide formed on the metal heat conduction layer 13.

參閱圖7及圖28,接著,第一輸送機構51沿第一輸送方向D1將承載治具2輸送至吹乾段413並於其內移動。首先,鄰近化學反應段412的下方第四噴頭417傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的第四藥液415由第一開孔230及第二開孔235排出。隨後,鄰近化學反應段412的上方第四噴頭417傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的第四藥液415刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的第四藥液415由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離化學反應段412的另一對第四藥液415也會依照前述方式對晶片1進行第二道吹乾作業。Referring to FIGS. 7 and 28, next, the first conveying mechanism 51 conveys the carrying jig 2 to the drying section 413 along the first conveying direction D1 and moves therein. First, the gas ejected obliquely upward from the fourth shower head 417 adjacent to the chemical reaction section 412 will be sprayed to the wafer 1 through the through hole 215 and drive the fourth chemical liquid 415 on the wafer 1 from the first opening 230 and the second opening The hole 235 is discharged. Subsequently, the gas ejected from the fourth nozzle 417 above the adjacent chemical reaction section 412 obliquely downward will scrape off the fourth chemical liquid 415 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the An opening 230 and a second opening 235 are sprayed onto the wafer 1 and drive the fourth chemical solution 415 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of fourth chemical liquids 415 far from the chemical reaction section 412 will also perform a second drying operation on the wafer 1 according to the aforementioned method.

參閱圖7、圖8、圖9及圖29,最後,其中一個第四側噴嘴418沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個第四側噴嘴418沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能將晶片1上還殘留的第四藥液415由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的第四藥液415完全吹除。Referring to FIGS. 7, 8, 9 and 29, finally, the gas emitted by one of the fourth side nozzles 418 along the left jet direction D3 will be sprayed to the wafer 1 via the corresponding side flow channel 24, while the other fourth The gas ejected by the side nozzle 418 along the right jet direction D4 will be sprayed to the wafer 1 through the corresponding side flow channel 24, so that the gas can discharge the fourth chemical liquid 415 remaining on the wafer 1 from the through hole 215 or the end flow channel 25 Discharge to perform the third drying operation on the wafer 1. With this, it is possible to ensure that the fourth chemical solution 415 on each wafer 1 is completely blown out.

參閱圖7及圖30,在第四清洗步驟S10中,第一輸送機構51帶動承載治具2先進入第四清洗區42的第一清洗段421內,第一清洗段421的下方第一噴水頭424朝上噴出的水426會經由通孔215噴至晶片1,而上方第一噴水頭424朝下噴出的水426則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第一道清洗,以洗掉各晶片1上已被吹乾的第四藥液415。接著,下方第一噴氣頭425傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水426由第一開孔230及第二開孔235排出。隨後,上方第一噴氣頭425傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水426刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水426由通孔215排出,以吹乾晶片1。Referring to FIGS. 7 and 30, in the fourth cleaning step S10, the first conveying mechanism 51 drives the carrying jig 2 to enter the first cleaning section 421 of the fourth cleaning area 42 first, and the first water spray below the first cleaning section 421 The water 426 sprayed upward by the head 424 is sprayed to the wafer 1 through the through hole 215, and the water 426 sprayed downward by the upper first water spray head 424 is sprayed to the wafer 1 through the first opening 230 and the second opening 235. In order to perform the first cleaning on each wafer 1, the fourth chemical liquid 415 on each wafer 1 that has been blown dry is washed away. Then, the gas jetted downward from the first gas jet head 425 upwardly is sprayed to the wafer 1 through the through hole 215 and drives the water 426 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. Subsequently, the gas jetted from the upper first jet head 425 obliquely downward will scrape off the water 426 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening The hole 235 is sprayed to the wafer 1 and drives the water 426 on the wafer 1 to be discharged from the through hole 215 to dry the wafer 1.

之後,第一輸送機構51帶動承載治具2進入第二清洗段422的水槽427內。承載治具2於水槽427內移動的過程中是完全浸泡在水428內。水428能經由通孔215、第一開孔230、第二開孔235、側流道24及端流道25流入承載治具2內的晶片1處。此外,下方第二噴水頭429朝上所噴出的水428會經由通孔215流至晶片1,而上方第二噴水頭429朝下所噴出的水428會經由第一開孔230及第二開孔235流至晶片1,使得水428能在承載治具2內順暢地流動,以對各晶片1進行第二道清洗。接著,下方第二噴氣頭430傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水428由第一開孔230及第二開孔235排出。上方第二噴氣頭430傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水428刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水428由通孔215排出,以吹乾晶片1。After that, the first conveying mechanism 51 drives the carrying jig 2 into the water tank 427 of the second cleaning section 422. During the movement of the carrying jig 2 in the water tank 427, it is completely immersed in the water 428. The water 428 can flow into the wafer 1 in the carrier jig 2 through the through hole 215, the first opening 230, the second opening 235, the side flow channel 24 and the end flow channel 25. In addition, the water 428 sprayed upward by the lower second water spray head 429 flows to the wafer 1 through the through hole 215, and the water 428 sprayed downward by the upper second water spray head 429 passes the first opening 230 and the second opening The hole 235 flows to the wafer 1 so that the water 428 can smoothly flow in the carrier jig 2 to perform a second cleaning of each wafer 1. Then, the gas jetted downward from the second jet head 430 tilted upwards will be sprayed to the wafer 1 through the through hole 215 and drive the water 428 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected from the upper second jet head 430 tilting downward will scrape off the water 428 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and the second opening 235 The water sprayed on the wafer 1 and driving the water 428 on the wafer 1 is discharged through the through hole 215 to dry the wafer 1.

參閱圖7、圖8、圖30及圖31,第一輸送機構51接著帶動承載治具2進入第三清洗段423內。第三清洗段423的下方噴灑件431朝上噴出的水434會經由通孔215噴至晶片1,而上方噴灑件431朝下噴出的水434則會經由第一開孔230及第二開孔235噴至晶片1,以對各晶片1進行第三道清洗。藉由第四清洗區42的三道清洗機制,能確保將各晶片1上殘留的第四藥液415完全洗淨去除。Referring to FIGS. 7, 8, 30 and 31, the first conveying mechanism 51 then drives the bearing jig 2 into the third cleaning section 423. The water 434 sprayed upward by the lower spray member 431 of the third cleaning section 423 will be sprayed to the wafer 1 through the through hole 215, and the water 434 sprayed downward by the upper spray member 431 will pass the first opening 230 and the second opening 235 sprays onto the wafer 1 to perform a third cleaning on each wafer 1. The three cleaning mechanisms of the fourth cleaning area 42 can ensure that the fourth chemical liquid 415 remaining on each wafer 1 is completely washed and removed.

鄰近噴灑件431的下方第三噴氣頭432傾斜朝上所噴出的氣體會經由通孔215噴至晶片1並帶動晶片1上的水434由第一開孔230及第二開孔235排出。鄰近噴灑件431的上方第三噴氣頭432傾斜朝下所噴出的氣體會將由第一開孔230及第二開孔235排出的水434刮掉,同時,氣體也會經由第一開孔230及第二開孔235噴至晶片1並帶動晶片1上的水434由通孔215排出,以對晶片1進行第一道吹乾作業。同理,遠離噴灑件431的另一對第三噴氣頭432也會依照前述方式對晶片1進行第二道吹乾作業。The gas ejected obliquely upward by the third jet head 432 adjacent to the spraying member 431 will be sprayed to the wafer 1 through the through hole 215 and drive the water 434 on the wafer 1 to be discharged from the first opening 230 and the second opening 235. The gas ejected from the third jet head 432 above the spraying member 431 at an oblique downward direction will scrape off the water 434 discharged from the first opening 230 and the second opening 235, and at the same time, the gas will also pass through the first opening 230 and The second opening 235 is sprayed to the wafer 1 and drives the water 434 on the wafer 1 to be discharged from the through hole 215 to perform the first drying operation on the wafer 1. Similarly, another pair of third jet heads 432 far from the spraying member 431 will also perform a second drying operation on the wafer 1 in the foregoing manner.

最後,其中一個側噴氣嘴433沿著左噴氣方向D3所噴出的氣體會經由對應的側流道24噴至晶片1,而另一個側噴氣嘴433沿著右噴氣方向D4所噴出的氣體會經由對應的側流道24噴至晶片1,使氣體能帶動晶片1上殘留的水434由通孔215或端流道25排出,以對晶片1進行第三道吹乾作業。藉此,能確保將各晶片1上的水434完全吹除。Finally, the gas from one of the side jet nozzles 433 along the left jet direction D3 will be sprayed to the wafer 1 via the corresponding side flow channel 24, while the gas from the other side jet nozzle 433 along the right jet direction D4 will pass through The corresponding side flow channel 24 is sprayed to the wafer 1 so that the gas can drive the remaining water 434 on the wafer 1 to be discharged through the through hole 215 or the end flow channel 25 to perform the third drying operation on the wafer 1. By this, it is possible to ensure that the water 434 on each wafer 1 is completely blown off.

參閱圖7及圖32,在乾燥步驟S11,第一輸送機構51帶動承載治具2先進入乾燥區44的吹乾段441內,位在下方的各第一吹風件443朝上所噴出的氣體會經由通孔215噴至晶片1,而位在上方的各第一吹風件443朝下所噴出的氣體會經由第一開孔230及第二開孔235噴至晶片1。由於第一吹風件443所吹出的壓縮風的溫度是例如等於或小於60℃,因此,能先將各晶片1吹乾。Referring to FIGS. 7 and 32, in the drying step S11, the first conveying mechanism 51 drives the carrier jig 2 to enter the drying section 441 of the drying area 44 first, and the first blower 443 located below the gas ejected upward It will be sprayed to the wafer 1 through the through hole 215, and the gas blown downward by each first blowing member 443 located above will be sprayed to the wafer 1 through the first opening 230 and the second opening 235. Since the temperature of the compressed air blown by the first blowing member 443 is, for example, equal to or lower than 60°C, each wafer 1 can be dried first.

第一輸送機構51接著帶動承載治具2進入烘乾段442內,位在下方的各第二吹風件444朝上所噴出的氣體會經由通孔215噴至晶片1,而位在上方的各第二吹風件444朝下所噴出的氣體會經由第一開孔230及第二開孔235噴至晶片1。由於第二吹風件444所吹出的壓縮風的溫度是例如介於85~90℃,因此,能先將各晶片1烘乾。The first conveying mechanism 51 then drives the carrying jig 2 into the drying section 442, and the gas blown upward by each second blowing member 444 located below will be sprayed to the wafer 1 through the through hole 215, while each located above The gas blown down by the second blowing member 444 is sprayed to the wafer 1 through the first opening 230 and the second opening 235. Since the temperature of the compressed air blown out by the second blowing member 444 is, for example, between 85°C and 90°C, each wafer 1 can be dried first.

參閱圖37及圖38,在移載步驟S12中,第一輸送機構51帶動承載治具2經由出料後端512出料並進入暫存機構61的第一輸送單元611上,隨後,第一輸送單元611的第一輸送輪613會沿第一輸送方向D1輸送承載治具2至橫移機構62的第二輸送單元621上。接著,第二驅動總成626透過滑動件625(如圖35)帶動第二輸送單元621由圖38所示的第一位置移動到圖39所示的第二位置,使第二輸送單元621對齊第二輸送機構52。Referring to FIGS. 37 and 38, in the transfer step S12, the first conveying mechanism 51 drives the carrying jig 2 to discharge through the discharge rear end 512 and enters the first conveying unit 611 of the temporary storage mechanism 61. Subsequently, the first The first conveying wheel 613 of the conveying unit 611 conveys the jig 2 to the second conveying unit 621 of the traverse mechanism 62 in the first conveying direction D1. Next, the second driving assembly 626 drives the second conveying unit 621 to move from the first position shown in FIG. 38 to the second position shown in FIG. 39 through the slider 625 (see FIG. 35), so that the second conveying unit 621 is aligned Second delivery mechanism 52.

參閱圖34及圖37,需說明的是,若橫移機構62發生故障而無法作動時,第一輸送單元611的第一輸送輪613便不會沿第一輸送方向D1輸送承載治具2移動。此時,升降單元612的第一驅動總成617驅動滑動架615沿上下方向Z向上移動一段距離,使得一對承托桿616能將位在第一輸送輪613上的承載治具2往上抬升而移離第一輸送輪613。藉此,以容許下一個由出料後端512出料的承載治具2能移動到第一輸送單元611上,使另一對承托桿616能透過前述方式將位在第一輸送輪613上的承載治具2往上抬升而移離第一輸送輪613。藉此,以達到暫存承載治具2的作用。當橫移機構62修復後,升降單元612的第一驅動總成617驅動滑動架615沿上下方向Z向下移動一段距離,使得一對承托桿616能將所承托承載治具2放置回第一輸送輪613上。接著,第一輸送輪613便能輸送承載治具2至第二輸送單元621上。Referring to FIG. 34 and FIG. 37, it should be noted that if the traverse mechanism 62 fails and cannot be operated, the first conveying wheel 613 of the first conveying unit 611 will not move along the first conveying direction D1 carrying the jig 2 . At this time, the first driving assembly 617 of the lifting unit 612 drives the sliding frame 615 to move upward in the vertical direction Z for a distance, so that the pair of supporting rods 616 can move the supporting jig 2 located on the first conveying wheel 613 upward Lifted and moved away from the first conveying wheel 613. Thereby, in order to allow the next carrying jig 2 discharged from the discharging rear end 512 to move to the first conveying unit 611, the other pair of supporting rods 616 can be positioned on the first conveying wheel 613 in the foregoing manner The upper loading jig 2 is lifted up and moved away from the first conveying wheel 613. In this way, the effect of temporarily storing the bearing fixture 2 can be achieved. After the traverse mechanism 62 is repaired, the first driving assembly 617 of the lifting unit 612 drives the sliding frame 615 to move down a distance in the up-down direction Z, so that the pair of supporting rods 616 can place the supported supporting jig 2 back On the first conveying wheel 613. Then, the first conveying wheel 613 can convey the carrying jig 2 to the second conveying unit 621.

參閱圖10及圖38,在回流步驟S13中,在第二位置的第二輸送單元621的第二輸送輪623會沿第二輸送方向D2輸送承載治具2移動,使承載治具2經由入料後端521入料至第二輸送機構52。隨後,第二輸送機構52便能沿第二輸送方向D2輸送承載治具2移動,使承載治具2經由出料前端522出料。藉此,在機體3的前端301便能同時處理承載治具2的入料及出料作業,能節省工人人員的配置數量及人力成本。Referring to FIGS. 10 and 38, in the reflow step S13, the second conveying wheel 623 of the second conveying unit 621 in the second position will move the carrying jig 2 along the second conveying direction D2, so that the carrying jig 2 passes through The material rear end 521 is fed to the second conveying mechanism 52. Then, the second conveying mechanism 52 can move the carrying jig 2 in the second conveying direction D2, so that the carrying jig 2 is discharged through the discharge front end 522. In this way, the front end 301 of the machine body 3 can simultaneously handle the feeding and discharging operations of the carrying jig 2, which can save the number of workers and the labor cost.

參閱圖2及圖11,在本實施例的另一實施態樣中,若各晶片1不具有金屬保護層14,則濕式處理設備300的處理方法的步驟中可省略移除步驟S7、第三清洗步驟S8、中和步驟S9及第四清洗步驟S10,也就是使濕式處理設備300的移除區39、一第三清洗區40、一中和區41及第四清洗區42停止運作。亦即濕式處理設備300可以隨著晶片1的形式而選擇執行或停止移除步驟S7(即剝銀步驟)、第三清洗步驟S8、中和步驟S9,及第四清洗步驟S10,使得濕式處理設備300在使用上非常有彈性,以滿足使用者的需求。Referring to FIGS. 2 and 11, in another embodiment of this embodiment, if each wafer 1 does not have the metal protection layer 14, the removal step S7 and the Three cleaning steps S8, neutralization step S9 and fourth cleaning step S10, that is, the removal area 39, a third cleaning area 40, a neutralization area 41 and the fourth cleaning area 42 of the wet processing equipment 300 are stopped . That is, the wet processing apparatus 300 can selectively perform or stop the removal step S7 (ie, the silver stripping step), the third cleaning step S8, the neutralization step S9, and the fourth cleaning step S10 according to the form of the wafer 1, so that the wet The processing device 300 is very flexible in use to meet the needs of users.

參閱圖20及圖22,在本實施例的另一實施態樣中,隨著去氧化區35所採用的第二藥液355的特性不同,使得在前述製程中可以省略第二清洗步驟S6,也就是說不用開啟第二清洗區36。藉此,使得濕式處理設備300可以依照去氧化區35所採用的第二藥液355的特性而彈性地調整控制是否開啟使用第二清洗區36。前述操作方式不會對蝕刻步驟S3及第一清洗步驟S4造成影響,使得濕式處理設備300仍能確實地對晶片1進行微蝕刻的作業。20 and 22, in another embodiment of this embodiment, as the characteristics of the second chemical liquid 355 used in the deoxidation zone 35 are different, the second cleaning step S6 can be omitted in the foregoing process, That is, the second cleaning area 36 does not need to be opened. As a result, the wet processing device 300 can flexibly adjust and control whether to use the second cleaning zone 36 according to the characteristics of the second chemical liquid 355 used in the deoxidation zone 35. The foregoing operation mode does not affect the etching step S3 and the first cleaning step S4, so that the wet processing apparatus 300 can still reliably perform the micro-etching operation on the wafer 1.

參閱圖7,藉由濕式處理設備300搭配專屬的承載治具2(簡稱Boat或Carrier)設計,使得晶片1可以選擇性地將第一面111朝下供各承載片223所承載,或者是將第二面112朝下供各承載片223所承載。藉此,能提升使用上的彈性以滿足使用上的需求,並能提升處理晶片1的品質。Referring to FIG. 7, the design of the wet processing equipment 300 with a dedicated carrier fixture 2 (referred to as Boat or Carrier) enables the chip 1 to selectively place the first surface 111 downward for each carrier piece 223 to carry, or Place the second surface 112 downward for each carrying piece 223 to carry. Thereby, the flexibility in use can be improved to meet the needs in use, and the quality of the processing wafer 1 can be improved.

綜上所述,本實施例的濕式處理設備300,藉由蝕刻區32的第一藥液325能充分且確實地與晶片1的各引腳12或者是與晶片1因鋸切所產生的金屬絲產生化學反應並且蝕刻各引腳12或金屬絲,使得兩個相鄰的引腳12之間的距離能夠變大至預設的長度,或者是將金屬絲移除,以防止晶片1在後續使用時因熱脹冷縮的因素造成金屬絲與另一相鄰引腳12接觸或者是兩個相鄰的引腳12相互接觸,進而導致短路的情形產生,故確實能達成本發明之目的。In summary, the wet processing equipment 300 of the present embodiment can fully and surely contact the pins 12 of the wafer 1 or the wafer 1 due to sawing with the first chemical solution 325 in the etching area 32 The metal wire produces a chemical reaction and etches each pin 12 or wire so that the distance between two adjacent pins 12 can be increased to a predetermined length, or the wire is removed to prevent the wafer 1 from In the subsequent use, due to the factors of thermal expansion and contraction, the metal wire is in contact with another adjacent pin 12 or two adjacent pins 12 are in contact with each other, resulting in a short circuit situation, so it can indeed achieve the purpose of the invention .

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention, and should not be used to limit the scope of the present invention. Any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still classified as This invention covers the patent.

1:晶片11:絕緣封裝體111:第一面112:第二面113:側面12:引腳13:金屬導熱層14:金屬保護層2:承載治具21:承載盤211:盤體212:承載單元213:凸塊單元214:墊塊單元215:通孔216:定位孔217:凸伸臂218:凸塊219:墊塊220:溝槽221:長面部222:短面部223:承載片23:蓋板230:第一開孔231:板體232:定位柱233:開孔單元234:穿孔235:第二開孔236:擋止框237:擋止端部24:側流道25:端流道300:濕式處理設備3:機體301:前端302:後端31:濕潤區310:水311:入料段312:濕潤段313:吹乾段314:噴灑件315:噴氣頭316:側噴氣嘴32:蝕刻區321:分隔段322:化學反應段323:吹乾段324:第一藥液槽325:第一藥液326:第一藥液噴頭327:第一噴頭328:第一側噴嘴33:第一清洗區331:第一清洗段332:第二清洗段333:第三清洗段334:第四清洗段335:第一噴水頭336:第一噴氣頭337:水338:水槽339:水340:第二噴水頭341:第二噴氣頭342:第一噴灑件343:第三噴氣頭344:水345:第二噴灑件346:第四噴氣頭347:側噴氣嘴348:水35:去氧化區351:分隔段352:化學反應段353:吹乾段354:第二藥液槽355:第二藥液356:第二藥液噴頭357:第二噴頭358:第二側噴嘴36:第二清洗區361:第一清洗段362:第二清洗段363:第三清洗段364:第一噴水頭365:第一噴氣頭366:水367:水槽368:水369:第二噴水頭370:第二噴氣頭371:噴灑件372:第三噴氣頭373:側噴氣嘴374:水38:檢查區39:移除區391:分隔段392:化學反應段393:吹乾段394:第三藥液槽395:第三藥液396:第三藥液噴頭397:第三噴頭398:第三側噴嘴40:第三清洗區401:第一清洗段402:第二清洗段403:第一噴水頭404:第一噴氣頭405:水406:噴灑件407:第二噴氣頭408:側噴氣嘴409:水41:中和區411:分隔段412:化學反應段413:吹乾段414:第四藥液槽415:第四藥液416:第四藥液噴頭417:第四噴頭418:第四側噴嘴42:第四清洗區421:第一清洗段422:第二清洗段423:第三清洗段424:第一噴水頭425:第一噴氣頭426:水427:水槽428:水429:第二噴水頭430:第二噴氣頭431:噴灑件432:第三噴氣頭433:側噴氣嘴434:水44:乾燥區441:吹乾段442:烘乾段443:第一吹風件444:第二吹風件45:回流區5:輸送裝置51:第一輸送機構511:入料前端512:出料後端513:下輸送滾輪514:上輸送滾輪515:實心滾輪516:液切滾輪52:第二輸送機構521:入料後端522:出料前端6:移載裝置61:暫存機構611:第一輸送單元612:升降單元613:第一輸送輪614:導桿615:滑動架616:承托桿617:第一驅動總成62:橫移機構621:第二輸送單元622:橫移單元623:第二輸送輪624:導軌625:滑動件626:第二驅動總成S1:輸送步驟S2:濕潤步驟S3:蝕刻步驟S4:第一清洗步驟S5:去氧化步驟S6:第二清洗步驟S7:移除步驟S8:第三清洗步驟S9:中和步驟S10:第四清洗步驟S11:乾燥步驟S12:移載步驟S13:回流步驟D1:第一輸送方向D2:第二輸送方向D3:左噴氣方向D4:右噴氣方向X:前後方向Y:左右方向Z:上下方向 1: Chip 11: Insulating package 111: First side 112: Second side 113: Side 12: Pin 13: Metal heat conduction layer 14: Metal protective layer 2: Carrier fixture 21: Carrier plate 211: Disc body 212: Carrier unit 213: bump unit 214: pad unit 215: through hole 216: positioning hole 217: protrusion arm 218: bump 219: pad 220: groove 221: long face 222: short face 223: carrier piece 23 : Cover plate 230: first opening 231: plate body 232: positioning column 233: opening unit 234: perforation 235: second opening 236: stop frame 237: stop end 24: side flow channel 25: end Flow channel 300: Wet processing equipment 3: Machine body 301: Front end 302: Rear end 31: Wetting zone 310: Water 311: Feeding section 312: Wetting section 313: Drying section 314: Spraying piece 315: Jet head 316: Side Jet nozzle 32: Etching area 321: Separation section 322: Chemical reaction section 323: Blow-drying section 324: First chemical solution tank 325: First chemical solution 326: First chemical solution nozzle 327: First nozzle 328: First side Nozzle 33: first cleaning zone 331: first cleaning section 332: second cleaning section 333: third cleaning section 334: fourth cleaning section 335: first water spray head 336: first spray head 337: water 338: water tank 339 : Water 340: Second sprinkler 341: Second jet 342: First spray 343: Third jet 344: Water 345: Second spray 346: Fourth jet 347: Side jet 348: Water 35 : Deoxidation zone 351: Separation section 352: Chemical reaction section 353: Drying section 354: Second chemical liquid tank 355: Second chemical liquid 356: Second chemical liquid spray head 357: Second spray head 358: Second side nozzle 36 : Second cleaning zone 361: First cleaning section 362: Second cleaning section 363: Third cleaning section 364: First spray head 365: First jet head 366: Water 367: Water tank 368: Water 369: Second spray head 370: Second jet head 371: Spray piece 372: Third jet head 373: Side jet nozzle 374: Water 38: Inspection area 39: Removal area 391: Separation section 392: Chemical reaction section 393: Drying section 394: No. Three chemical liquid tank 395: third chemical liquid 396: third chemical liquid spray head 397: third spray head 398: third side nozzle 40: third cleaning area 401: first cleaning section 402: second cleaning section 403: first Sprinkler head 404: First jet head 405: Water 406: Spray piece 407: Second jet head 408: Side jet nozzle 409: Water 41: Neutral zone 411: Separation section 412: Chemical reaction section 413: Drying section 414: Fourth chemical liquid tank 415: Fourth chemical liquid 416: Fourth chemical liquid spray head 417: Fourth spray head 418: Fourth side nozzle 42: Fourth cleaning area 421: First cleaning section 422: Second cleaning section 423: No. Third cleaning section 424: The first water spray head 425: First jet head 426: water 427: sink 428: water 429: second jet head 430: second jet head 431: spraying piece 432: third jet head 433: side jet nozzle 434: water 44: drying zone 441: blowing Drying section 442: Drying section 443: First blowing piece 444: Second blowing piece 45: Return area 5: Conveying device 51: First conveying mechanism 511: Feeding front end 512: Discharging rear end 513: Lower conveying roller 514 : Upper conveyor roller 515: Solid roller 516: Liquid cutting roller 52: Second conveyor mechanism 521: Feeding rear end 522: Discharging front end 6: Transfer device 61: Temporary storage mechanism 611: First conveying unit 612: Lifting unit 613: First conveyor wheel 614: Guide rod 615: Slide frame 616: Support rod 617: First drive assembly 62: Traverse mechanism 621: Second conveyor unit 622: Traverse unit 623: Second conveyor wheel 624: Guide rail 625: Slider 626: Second drive assembly S1: Conveying step S2: Wetting step S3: Etching step S4: First cleaning step S5: Deoxidation step S6: Second cleaning step S7: Removal step S8: Third Cleaning step S9: Neutralization step S10: Fourth cleaning step S11: Drying step S12: Transfer step S13: Reflow step D1: First conveying direction D2: Second conveying direction D3: Left jetting direction D4: Right jetting direction X: Front and back direction Y: left and right direction Z: up and down direction

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:    圖1是本發明濕式處理設備的一實施例所欲加工處理的一晶片的一仰視圖;    圖2是該晶片的一側視圖; 圖3是用以承載該晶片的一承載治具的一承載盤的一俯視圖;    圖4是該承載治具的一蓋板的一俯視圖; 圖5是該承載治具的一不完整立體分解圖;    圖6是該承載治具的一不完整俯視圖,說明該晶片組裝於該承載盤上;    圖7是該承載治具的一不完整剖視圖,說明該晶片組裝於該承載治具內;    圖8是該承載治具的一不完整的側視示意圖;    圖9是該承載治具的一不完整的側視示意圖;    圖10是該實施例的一俯視圖,說明一機體、一輸送裝置,及一移載裝置之間的配置關係;    圖11是該實施例的一側視圖;    圖12是該實施例的一濕潤區的一側視圖; 圖13是該實施例的該濕潤區的一濕潤段的一側視示意圖; 圖14是該實施例該濕潤區的一吹乾段的一側視示意圖; 圖15是該實施例的一蝕刻區的一側視圖; 圖16是該實施例該蝕刻區的一化學反應段的一側視示意圖; 圖17是該實施例該蝕刻區的一吹乾段的一側視示意圖; 圖18是該實施例的一第一清洗區的一側視圖; 圖19是該實施例該第一清洗區的一第四清洗段的一側視示意圖; 圖20是該實施例的一去氧化區的一側視圖; 圖21是該實施例該去氧化區的一吹乾段的一側視示意圖; 圖22是該實施例的一第二清洗區的一側視圖; 圖23是該實施例該第二清洗區的一第三清洗段的一側視示意圖; 圖24是該實施例的一移除區的一側視圖; 圖25是該實施例該移除區的一吹乾段的一側視示意圖; 圖26是該實施例的一第三清洗區的一側視圖; 圖27是該實施例該第三清洗區的一第二清洗段的一側視示意圖; 圖28是該實施例的一中和區的一側視圖; 圖29是該實施例該中和區的一吹乾段的一側視示意圖; 圖30是該實施例的一第四清洗區的一側視圖; 圖31是該實施例該第四清洗區的一第三清洗段的一側視示意圖; 圖32是該實施例的一乾燥區的一側視圖; 圖33是該實施例的一移載裝置的一立體圖; 圖34是該實施例的一移載裝置的一側視圖; 圖35是該實施例的一不完整俯視圖; 圖36是該實施例的處理方法的一步驟流程圖; 圖37是該實施例的一不完整俯視圖,說明一第二輸送單元在一第一位置;及 圖38是該實施例的一不完整俯視圖,說明該第二輸送單元在一第二位置。Other features and functions of the present invention will be clearly presented in the embodiment with reference to the drawings, in which: FIG. 1 is a bottom view of a wafer to be processed by an embodiment of the wet processing equipment of the present invention; FIG. 2 is a side view of the wafer; FIG. 3 is a top view of a carrier tray of a carrier jig for supporting the wafer; FIG. 4 is a top view of a cover plate of the carrier jig; FIG. 5 is the carrier An incomplete three-dimensional exploded view of the jig; FIG. 6 is an incomplete top view of the carrier jig, illustrating that the chip is assembled on the carrier tray; FIG. 7 is an incomplete cross-sectional view of the carrier jig, illustrating the chip assembly In the bearing jig; Figure 8 is an incomplete side view of the bearing jig; Figure 9 is an incomplete side view of the bearing jig; Figure 10 is a top view of the embodiment, illustrating The configuration relationship between a machine body, a conveying device, and a transfer device; FIG. 11 is a side view of the embodiment; FIG. 12 is a side view of a wet area of the embodiment; FIG. 13 is the embodiment FIG. 14 is a schematic side view of a wet section of the wet area of the embodiment; FIG. 14 is a schematic side view of a dry section of the wet area of the embodiment; FIG. 15 is a side view of an etching area of the embodiment; 16 is a schematic side view of a chemical reaction section of the etching zone of the embodiment; FIG. 17 is a schematic side view of a drying section of the etching zone of the embodiment; FIG. 18 is a first cleaning of the embodiment A side view of the zone; FIG. 19 is a schematic side view of a fourth cleaning section of the first cleaning zone of the embodiment; FIG. 20 is a side view of a deoxidation zone of the embodiment; FIG. 21 is the implementation An example of a side view of a drying section of the deoxidation zone; FIG. 22 is a side view of a second cleaning zone of the embodiment; FIG. 23 is a third cleaning zone of the second cleaning zone of the embodiment Fig. 24 is a side view of a removal area of the embodiment; Fig. 25 is a side view of a drying section of the removal area of the embodiment; Fig. 26 is a view of the embodiment A side view of a third cleaning area; FIG. 27 is a schematic side view of a second cleaning section of the third cleaning area of the embodiment; FIG. 28 is a side view of a neutralization area of the embodiment; 29 is a schematic side view of a drying section of the neutralization zone of the embodiment; FIG. 30 is a side view of a fourth cleaning zone of the embodiment; FIG. 31 is a side view of the fourth cleaning zone of the embodiment A schematic side view of the third cleaning section; FIG. 32 is a side view of a drying area of the embodiment; FIG. 33 is a perspective view of a transfer device of the embodiment; FIG. 34 is a transfer of the embodiment A side view of the device; FIG. 35 is an incomplete top view of the embodiment; FIG. 36 is a step flow chart of the processing method of the embodiment; FIG. 37 is an incomplete top view of the embodiment, illustrating a second conveyance The unit is in a first position; and FIG. 38 is an incomplete top view of the embodiment, illustrating the second conveying unit In a second position.

2:承載治具 2: Bearing fixture

300:濕式處理設備 300: Wet processing equipment

3:機體 3: body

301:前端 301: front end

302:後端 302: backend

31:濕潤區 31: Wet area

32:蝕刻區 32: Etching area

33:第一清洗區 33: The first cleaning area

35:去氧化區 35: Deoxidation zone

36:第二清洗區 36: Second cleaning area

38:檢查區 38: Inspection area

39:移除區 39: Remove area

40:第三清洗區 40: Third cleaning area

41:中和區 41: Zhonghe District

42:第四清洗區 42: Fourth cleaning area

44:乾燥區 44: Dry area

45:回流區 45: reflux area

5:輸送裝置 5: Conveying device

51:第一輸送機構 51: The first conveying mechanism

511:入料前端 511: feeding front

512:出料後端 512: Discharging back end

52:第二輸送機構 52: Second conveying mechanism

521:入料後端 521: Feeding back end

522:出料前端 522: Discharging front end

6:移載裝置 6: Transfer device

D1:第一輸送方向 D1: First conveying direction

D2:第二輸送方向 D2: Second conveying direction

X:前後方向 X: front and back direction

Y:左右方向 Y: left and right direction

Claims (27)

一種濕式處理設備,適於對一承載治具所承載的多個晶片進行加工處理,該濕式處理設備包含: 一輸送裝置,可沿一第一輸送方向輸送該承載治具移動; 一蝕刻區,具有用以供該輸送裝置所輸送的該承載治具浸泡以蝕刻各該晶片的多個引腳的第一藥液; 一第一清洗區,位於該蝕刻區下游側用以清洗經由該蝕刻區輸出的該承載治具上的該等晶片; 一去氧化區,位於該第一清洗區下游側,並具有用以供該輸送裝置所輸送的該承載治具浸泡以對各該晶片的該等引腳產生去氧化反應的第二藥液;及 一第二清洗區,位於該去氧化區下游側用以清洗經由該去氧化區輸出的該承載治具上的該等晶片。A wet processing device suitable for processing a plurality of wafers carried by a carrier jig. The wet processing device includes: a conveying device that can convey the carrier jig along a first conveying direction; an etching The area has a first chemical solution for immersing the carrying jig transported by the conveying device to etch a plurality of pins of each wafer; a first cleaning area located downstream of the etching area for cleaning via the The wafers on the carrier jig output by the etching zone; a deoxidation zone, located on the downstream side of the first cleaning zone, and having a carrier jig for the conveying device to immerse the wafer The pins generate a second chemical solution for deoxidation reaction; and a second cleaning zone, located on the downstream side of the deoxidation zone, is used to clean the wafers on the carrier jig output through the deoxidation zone. 如請求項1所述的濕式處理設備,其中,該蝕刻區形成一用以供該承載治具穿過並容置有該第一藥液的第一藥液槽,該蝕刻區包括位於該第一藥液槽下游側的兩個第一噴頭及兩個第一側噴嘴,該兩第一噴頭沿一垂直於該第一輸送方向的上下方向相間隔,用以對該承載治具上的該等晶片噴氣以移除該第一藥液,該兩第一側噴嘴沿一垂直於該上下方向的左右方向相間隔,用以對該承載治具上的該等晶片側向噴氣以移除該第一藥液。The wet processing apparatus according to claim 1, wherein the etching zone forms a first chemical solution tank for the carrying jig to pass through and contains the first chemical solution, the etching zone includes Two first spray heads and two first side nozzles on the downstream side of the first chemical liquid tank, the two first spray heads are spaced apart in an up-and-down direction perpendicular to the first conveying direction The wafers are jetted to remove the first chemical solution, and the two first side nozzles are spaced apart in a left-right direction perpendicular to the up-down direction, for laterally jetting the wafers on the carrying jig to remove The first liquid medicine. 如請求項2所述的濕式處理設備,其中,該蝕刻區還包括多個設置於該第一藥液槽內的第一藥液噴頭,該等第一藥液噴頭中的一部分朝上對該等晶片噴出水刀形式的該第一藥液,而另一部分朝下對該等晶片噴出水刀形式的該第一藥液,該兩第一側噴嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing apparatus according to claim 2, wherein the etching zone further includes a plurality of first chemical liquid spray heads disposed in the first chemical liquid tank, and a portion of the first chemical liquid spray heads face upward The wafers spray the first chemical liquid in the form of a water jet, and the other part sprays the first chemical liquid in the form of a water jet downward to the wafers. One of the two first side nozzles is directed in a left jet direction The wafers are jetted, and the other one is jetting the wafers in a right jet direction opposite to the left jet direction. 如請求項1所述的濕式處理設備,其中,該第一清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿一垂直於該第一輸送方向的上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段形成有一水槽,該水槽容置有用以清洗該等晶片的該水,該第二清洗段包含兩個沿該上下方向相間隔的第二噴水頭,及兩個沿該上下方向相間隔且位於該兩第二噴水頭下游側的第二噴氣頭,該兩第二噴水頭用以對該等晶片噴出水刀形式的該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水。The wet processing apparatus according to claim 1, wherein the first cleaning section includes a first cleaning section and a second cleaning section located downstream of the first cleaning section, the first cleaning section includes two A first water jet head spaced apart in an up and down direction perpendicular to the first conveying direction, and two first air jet heads spaced apart in the up and down direction and located on the downstream side of the two first water jet heads, the two first water jets The head is used to spray water in the form of a waterjet on the wafers, the first jet head is used to jet the wafers to remove the water, the second cleaning section forms a water tank, and the water tank is accommodated to clean the wafers For the water of the wafer, the second cleaning section includes two second water jet heads spaced apart in the up-down direction, and two second air jet heads spaced apart in the up-down direction and located on the downstream side of the two second water jet heads, The two second water jet heads are used to spray the water in the form of a waterjet on the wafers, and the two second air jet heads are used to spray the wafers to remove the water. 如請求項4所述的濕式處理設備,其中,該第一清洗區還包括一位於該第二清洗段下游側的第三清洗段,該第三清洗段包含多對沿該第一輸送方向相間隔排列的第一噴灑件,及兩個沿該上下方向相間隔且位於該等第一噴灑件下游側的第三噴氣頭,每一該對的兩個第一噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第三噴氣頭用以對該等晶片噴氣以移除該水。The wet processing equipment according to claim 4, wherein the first cleaning zone further includes a third cleaning section located downstream of the second cleaning section, the third cleaning section includes a plurality of pairs along the first conveying direction A first spraying member arranged at intervals, and two third spray heads spaced apart in the up-down direction and located on the downstream side of the first spraying members, each pair of two first spraying members are arranged in the up-down direction The space is used to spray the water on the wafers, and the two third jet heads are used to spray the wafers to remove the water. 如請求項5所述的濕式處理設備,其中,該第一清洗區包括一位於該第三清洗段下游側的第四清洗段,該第四清洗段包含多對沿該第一輸送方向相間隔排列的第二噴灑件、兩個沿該上下方向相間隔且位於該等第二噴灑件下游側的第四噴氣頭,及兩個位於該等第二噴灑件下游側的側噴氣嘴,每一該對的兩個第二噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第四噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴一垂直於該上下方向的左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing apparatus according to claim 5, wherein the first cleaning zone includes a fourth cleaning section located downstream of the third cleaning section, and the fourth cleaning section includes a plurality of pairs of phases along the first conveying direction A second spraying member arranged at intervals, two fourth spray heads spaced apart in the up-down direction and located on the downstream side of the second spraying members, and two side spray nozzles on the downstream side of the second spraying members, each A pair of two second spraying members are spaced along the up-down direction to spray the water on the wafers, the two fourth spray heads are used to spray the wafers to remove the water, and the two side spray nozzles A left and right direction perpendicular to the up and down direction is spaced to jet the wafers on the carrying jig transported by the first transport mechanism laterally to remove the water, one of the jet nozzles on both sides is The wafers are jetted in a left jet direction, and the other is jetted in a right jet direction opposite to the left jet direction. 如請求項2所述的濕式處理設備,其中,該去氧化區形成一用以供該承載治具穿過並容置有該第二藥液的第二藥液槽,該去氧化區包括位於該第二藥液槽下游側的兩個第二噴頭及兩個第二側噴嘴,該兩第二噴頭沿該上下方向相間隔用以對該等晶片噴氣以移除該第二藥液,該兩第二側噴嘴沿該左右方向相間隔用以對該等晶片側向噴氣以移除該第二藥液。The wet processing equipment according to claim 2, wherein the deoxidation zone forms a second chemical solution tank for the carrying jig to pass through and contains the second chemical solution, the deoxidation zone includes Two second spray heads and two second side nozzles located on the downstream side of the second chemical liquid tank, the two second spray heads are spaced apart along the up-down direction to spray the wafers to remove the second chemical liquid, The two second-side nozzles are spaced apart in the left-right direction to spray the wafers laterally to remove the second chemical liquid. 如請求項7所述的濕式處理設備,其中,該去氧化區還包括多個設置於該第二藥液槽內的第二藥液噴頭,該等第二藥液噴頭中的一部分朝上對該等晶片噴出水刀形式的該第二藥液,而另一部分朝下對該等晶片噴出水刀形式的該第二藥液,該兩第二側噴嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing apparatus according to claim 7, wherein the deoxidation zone further includes a plurality of second chemical liquid spray heads disposed in the second chemical liquid tank, and a part of the second chemical liquid spray heads face upward The second chemical liquid in the form of a water jet is sprayed onto the wafers, while the second chemical liquid in the form of a water jet is sprayed down on the wafers, and one of the two second side nozzles is in a left jet direction Jet the wafers, and the other one is jetting the wafers in a right jet direction opposite to the left jet direction. 如請求項1所述的濕式處理設備,其中,該第二清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿沿一垂直於該第一輸送方向的上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段形成有一水槽,該水槽容置有用以清洗該等晶片的該水,該第二清洗段包含兩個沿該上下方向相間隔的第二噴水頭,及兩個沿該上下方向相間隔且位於該兩第二噴水頭下游側的第二噴氣頭,該兩第二噴水頭用以對該等晶片噴出水刀形式的該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水。The wet processing apparatus according to claim 1, wherein the second cleaning zone includes a first cleaning section and a second cleaning section located downstream of the first cleaning section, the first cleaning section includes two A first water jet head spaced along an up-down direction perpendicular to the first conveying direction, and two first air jet heads spaced along the up-down direction and located on the downstream side of the two first water jet heads, the two first The water spray head is used to spray water in the form of a waterjet on the wafers, the first air spray head is used to spray the wafers to remove the water, the second cleaning section forms a water tank, and the water tank is accommodated to clean the water Waiting for the water of the wafer, the second cleaning section includes two second water jet heads spaced apart in the up-down direction, and two second air jet heads spaced apart in the up-down direction and located on the downstream side of the two second water jet heads The two second water jet heads are used to jet the water in the form of a waterjet on the wafers, and the two second air jet heads are used to jet the wafers to remove the water. 如請求項9所述的濕式處理設備,其中,該第二清洗區還包括一位於該第二清洗段下游側的第三清洗段,該第三清洗段包含多對沿該第一輸送方向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的第三噴氣頭,及兩個沿該上下方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第三噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴沿一垂直於該上下方向的左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing equipment according to claim 9, wherein the second cleaning zone further includes a third cleaning section located downstream of the second cleaning section, the third cleaning section includes a plurality of pairs along the first conveying direction Sprinklers arranged in intervals, two third jet heads spaced apart in the up-down direction and located on the downstream side of the sprinklers, and two side jet nozzles spaced in the up-down direction and located on the downstream side of the sprinklers , The two spraying members of each pair are spaced apart along the up and down direction to spray the water on the wafers, the two third jetting heads are used to spray the wafers to remove the water, and the jet nozzles on both sides Spaced apart in a left-right direction perpendicular to the up-down direction, for laterally jetting the wafers on the carrying jig transported by the first transport mechanism to remove the water, one of the jet nozzles on both sides The wafers are jetted in a left jet direction, and the other jets are jetted in a right jet direction opposite to the left jet direction. 如請求項7所述的濕式處理設備,其中,各該晶片具有一金屬導熱層,及一形成於該金屬導熱層的金屬保護層,該濕式處理設備還包含一位於該第二清洗區下游側的移除區,及一位於該移除區下游側的第三清洗區,該移除區形成一用以供該承載治具穿過的第三藥液槽,該第三藥液槽容置有用以供該等晶片浸泡以去除各該晶片的該金屬保護層的第三藥液,該移除區包括位於該第三藥液槽下游側的兩個第三噴頭及兩個第三側噴嘴,該兩第三噴頭沿該上下方向相間隔用以對該等晶片噴氣以移除該第三藥液,該兩第三側噴嘴沿該左右方向相間隔用以對該等晶片側向噴氣以移除該第三藥液,該第三清洗區用以清洗經由該移除區輸出的該承載治具上的該等晶片。The wet processing apparatus according to claim 7, wherein each of the wafers has a metal thermal conductive layer, and a metal protective layer formed on the metal thermal conductive layer, the wet processing apparatus further includes a second cleaning area A removal zone on the downstream side, and a third cleaning zone on the downstream side of the removal zone, the removal zone forming a third chemical liquid tank for the carrying jig to pass through, the third chemical liquid tank A third chemical solution for immersing the wafers to remove the metal protective layer of each wafer is accommodated, and the removal area includes two third nozzles and two third nozzles on the downstream side of the third chemical solution tank Side nozzles, the two third nozzles are spaced apart along the up-down direction to jet the wafers to remove the third chemical liquid, and the two third side nozzles are spaced apart along the left-right direction to laterally target the wafers Air jet is used to remove the third chemical liquid, and the third cleaning zone is used to clean the wafers on the carrier jig output through the removal zone. 如請求項11所述的濕式處理設備,其中,該移除區還包括多個設置於該第三藥液槽內的第三藥液噴頭,該等第三藥液噴頭中的一部分朝上對該等晶片噴出水刀形式的該第三藥液,而另一部分朝下對該等晶片噴出水刀形式的該第三藥液,該兩第三側噴嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing apparatus according to claim 11, wherein the removal area further includes a plurality of third chemical liquid spray heads disposed in the third chemical liquid tank, and a portion of the third chemical liquid spray heads face upward The third chemical liquid in the form of a water jet is sprayed onto the wafers, and the third chemical liquid in the form of a water jet is sprayed down on the wafers, and one of the two third side nozzles is in a left jet direction Jet the wafers, and the other one is jetting the wafers in a right jet direction opposite to the left jet direction. 如請求項11所述的濕式處理設備,其中,該第三清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿該上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段包含多對沿該第一輸送方向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的第二噴氣頭,及兩個沿該上下方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴沿該左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing equipment according to claim 11, wherein the third cleaning zone includes a first cleaning section and a second cleaning section located downstream of the first cleaning section, the first cleaning section includes two A first water jet head spaced apart in the up-down direction, and two first gas jet heads spaced apart in the up-down direction and located on the downstream side of the two first water jet heads, the two first water jet heads are used to eject the wafers Water in the form of a waterjet, the first jetting head is used to jet the wafers to remove the water, the second cleaning section includes a plurality of pairs of spraying elements spaced apart along the first conveying direction, two along the top and bottom A second jet head spaced apart in the direction and located on the downstream side of the spray elements, and two side jet nozzles spaced in the up and down direction and located on the downstream side of the spray elements, each of the pair of two spray elements along the The upper and lower directions are spaced apart to spray the water on the wafers, the two second jet heads are used to spray the wafers to remove the water, and the two jet nozzles are spaced along the left and right directions to The wafers on the carrying jig conveyed by a conveying mechanism are laterally jetted to remove the water, one of the two jet nozzles jets the wafers in a left jet direction, and the other A right jet direction opposite to the left jet direction jets the wafers. 如請求項11所述的濕式處理設備,還包含一位於該第三清洗區下游側的中和區,及一位於該中和區下游側的第四清洗區,該中和區形成一用以供該承載治具穿過的第四藥液槽,該第四藥液槽容置有用以供該等晶片浸泡以中和去除各該晶片的該金屬導熱層上所形成的氧化物的第四藥液,該中和區包括位於該第四藥液槽下游側的兩個第四噴頭及兩個第四側噴嘴,該兩第四噴頭沿該上下方向相間隔用以對該等晶片噴氣以移除該第四藥液,該兩第四側噴嘴沿該左右方向相間隔用以對該等晶片側向噴氣以移除該第四藥液,該第四清洗區用以清洗經由該中和區輸出的該承載治具上的該等晶片。The wet processing apparatus according to claim 11, further comprising a neutralization zone located on the downstream side of the third cleaning zone, and a fourth cleaning zone located on the downstream side of the neutralization zone, the neutralization zone forming a function A fourth chemical solution tank for the carrying jig to pass through, the fourth chemical solution tank accommodating the first for immersing the wafers to neutralize and remove oxides formed on the metal thermal conductive layer of each wafer Four chemical liquids, the neutralization zone includes two fourth spray heads and two fourth side nozzles located on the downstream side of the fourth chemical liquid tank, the two fourth spray heads are spaced apart in the up and down direction to spray the wafers To remove the fourth chemical liquid, the two fourth side nozzles are spaced apart along the left-right direction to jet the wafers laterally to remove the fourth chemical liquid, and the fourth cleaning area is used to clean the medium And the wafers on the carrying jig output by the zone. 如請求項14所述的濕式處理設備,其中,該中和區還包括多個設置於該第四藥液槽內的第四藥液噴頭,該等第四藥液噴頭中的一部分朝上對該等晶片噴出水刀形式的該第四藥液,而另一部分朝下對該等晶片噴出水刀形式的該第四藥液,該兩第四側噴嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing apparatus according to claim 14, wherein the neutralization zone further includes a plurality of fourth chemical liquid spray heads disposed in the fourth chemical liquid tank, and a part of the fourth chemical liquid spray heads face upward The fourth chemical liquid in the form of a water jet is sprayed onto the wafers, and the fourth chemical liquid in the form of a water jet is sprayed down on the wafers, and one of the two fourth side nozzles is in a left jet direction Jet the wafers, and the other one is jetting the wafers in a right jet direction opposite to the left jet direction. 如請求項14所述的濕式處理設備,其中,該第四清洗區包括一第一清洗段,及一位於該第一清洗段下游側的第二清洗段,該第一清洗段包含兩個沿該上下方向相間隔的第一噴水頭,及兩個沿該上下方向相間隔且位於該兩第一噴水頭下游側的第一噴氣頭,該兩第一噴水頭用以對該等晶片噴出水刀形式的水,該第一噴氣頭用以對該等晶片噴氣以移除該水,該第二清洗段形成有一水槽,該水槽容置有用以清洗該等晶片的該水,該第二清洗段包含兩個沿該上下方向相間隔的第二噴水頭,及兩個沿該上下方向相間隔且位於該兩第二噴水頭下游側的第二噴氣頭,該兩第二噴水頭用以對該等晶片噴出水刀形式的該水,該兩第二噴氣頭用以對該等晶片噴氣以移除該水。The wet processing apparatus according to claim 14, wherein the fourth cleaning zone includes a first cleaning section and a second cleaning section located downstream of the first cleaning section, the first cleaning section includes two A first water jet head spaced apart in the up-down direction, and two first gas jet heads spaced apart in the up-down direction and located on the downstream side of the two first water jet heads, the two first water jet heads are used to eject the wafers Water in the form of a waterjet, the first jet head is used to jet the wafers to remove the water, the second cleaning section forms a water tank, the water tank accommodates the water used to clean the wafers, the second The cleaning section includes two second spray heads spaced apart in the up-down direction, and two second spray heads spaced apart in the up-down direction and located on the downstream side of the two second spray heads. The wafers are sprayed with the water in the form of a waterjet, and the two second jet heads are used to spray the wafers to remove the water. 如請求項16所述的濕式處理設備,其中,該第四清洗區還包括一位於該第二清洗段下游側的第三清洗段,該第三清洗段包含多對沿該第一輸送方向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的第三噴氣頭,及兩個沿該上下方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩第三噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴沿該左右方向相間隔,用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing equipment according to claim 16, wherein the fourth cleaning zone further includes a third cleaning section located downstream of the second cleaning section, the third cleaning section includes a plurality of pairs along the first conveying direction Sprinklers arranged in intervals, two third jet heads spaced apart in the up-down direction and located on the downstream side of the sprinklers, and two side jet nozzles spaced in the up-down direction and located on the downstream side of the sprinklers , The two spraying members of each pair are spaced apart along the up and down direction to spray the water on the wafers, the two third jetting heads are used to spray the wafers to remove the water, and the jet nozzles on both sides Spaced apart in the left-right direction for jetting the wafers on the carrying jig transported by the first transport mechanism laterally to remove the water, one of the jet nozzles on both sides is along a left jet direction Jet the wafers, and the other one is jetting the wafers in a right jet direction opposite to the left jet direction. 如請求項14所述的濕式處理設備,還包含一位於該蝕刻區上游側的濕潤區,及一位於該第四清洗區下游側的乾燥區,該濕潤區用以濕潤該輸送裝置所輸送的該承載治具上的該等晶片,該乾燥區透過吹熱風乾燥該等晶片。The wet processing equipment according to claim 14, further comprising a wetting zone located on the upstream side of the etching zone, and a drying zone located on the downstream side of the fourth cleaning zone, the wetting zone is used to wet the conveying device The wafers on the carrier jig, the drying zone dries the wafers by blowing hot air. 如請求項1所述的濕式處理設備,還包含一位於該蝕刻區上游側的濕潤區,及一位於該第二清洗區下游側的乾燥區,該濕潤區用以濕潤該輸送裝置所輸送的該承載治具上的該等晶片,該乾燥區透過吹熱風乾燥該等晶片。The wet processing equipment according to claim 1, further comprising a wetting zone located on the upstream side of the etching zone, and a drying zone located on the downstream side of the second cleaning zone, the wetting zone for wetting the conveying device The wafers on the carrier jig, the drying zone dries the wafers by blowing hot air. 如請求項18或19所述的濕式處理設備,其中,該輸送裝置包括一第一輸送機構,及一沿該左右方向與該第一輸送機構相間隔的第二輸送機構,該第一輸送機構可沿該第一輸送方向輸送該承載治具移動,並具有一位於該濕潤區的入料前端,及一位於該乾燥區的出料後端,該第二輸送機構可沿一相反於該第一輸送方向的第二輸送方向輸送該承載治具移動,並具有一鄰近該出料後端的入料後端,及一鄰近於該入料前端的出料前端,該濕式處理設備還包含一移載裝置,該移載裝置包括一位於該乾燥區下游側的暫存機構,及一位於該暫存機構下游側的橫移機構,該暫存機構包括一第一輸送單元,及一升降單元,該第一輸送單元對應於該出料後端用以承接由該出料後端所輸出的該承載治具,該升降單元包含多對沿該上下方向相間隔排列的承托桿,各該對承托桿能沿該上下方向升降且用以承托該第一輸送單元上的該承載治具,該橫移機構包括一第二輸送單元,及一橫移單元,該橫移單元用以驅動該第二輸送單元沿該左右方向在一對齊於該第一輸送單元的第一位置,及一對齊於該入料後端的第二位置之間移動,當該第二輸送單元在該第一位置時,該第二輸送單元能承接由該第一輸送單元所輸出的該承載治具,當該第二輸送單元在該第二位置時,該第二輸送單元能將承接的該承載治具輸送至該第二輸送機構。The wet processing apparatus according to claim 18 or 19, wherein the conveying device includes a first conveying mechanism and a second conveying mechanism spaced apart from the first conveying mechanism in the left-right direction, the first conveying The mechanism can move the carrying jig along the first conveying direction, and has a feeding front end located in the wetting area and a discharging rear end located in the drying area. The second conveying mechanism can move along a direction opposite to the The second conveying direction of the first conveying direction conveys the carrying jig to move, and has a feeding rear end adjacent to the discharging rear end, and a discharging front end adjacent to the feeding front end, the wet processing equipment further includes A transfer device, the transfer device includes a temporary storage mechanism located on the downstream side of the drying area, and a lateral movement mechanism located on the downstream side of the temporary storage mechanism, the temporary storage mechanism includes a first conveying unit, and a lifting Unit, the first conveying unit corresponds to the discharge rear end for receiving the bearing jig output by the discharge rear end, the lifting unit includes a plurality of pairs of support rods arranged at intervals in the up-down direction, each The pair of supporting rods can be raised and lowered in the up and down direction and used to support the bearing jig on the first conveying unit. The traverse mechanism includes a second conveying unit and a traverse unit. The traverse unit is used To drive the second conveying unit to move between a first position aligned with the first conveying unit along the left-right direction and a second position aligned with the rear end of the feed, when the second conveying unit is in the first position At a position, the second conveying unit can receive the bearing jig output by the first conveying unit, and when the second conveying unit is at the second position, the second conveying unit can treat the bearing The tool is transported to the second transport mechanism. 如請求項1所述的濕式處理設備,還包含一位於該蝕刻區上游側的濕潤區,該濕潤區包含多對沿該第一輸送方向相間隔排列的噴灑件、兩個沿該上下方向相間隔且位於該等噴灑件下游側的噴氣頭,及兩個沿該左右方向相間隔且位於該等噴灑件下游側的側噴氣嘴,每一該對的兩個噴灑件沿該上下方向相間隔用以對該等晶片噴灑該水,該兩噴氣頭用以對該等晶片噴氣以移除該水,該兩側噴氣嘴用以對該第一輸送機構所輸送的該承載治具上的該等晶片側向噴氣以移除該水,該兩側噴氣嘴其中之一是沿一左噴氣方向對該等晶片噴氣,而其中另一是沿一相反於該左噴氣方向的右噴氣方向對該等晶片噴氣。The wet processing apparatus according to claim 1, further comprising a wetting zone located on the upstream side of the etching zone, the wetting zone includes a plurality of pairs of spraying elements spaced apart along the first conveying direction, and two along the up and down direction The jet heads that are spaced apart and located on the downstream side of the spray members, and two side jet nozzles that are spaced apart and located on the downstream side of the spray members, and the two spray members of each pair are opposed in the up and down direction The interval is used for spraying the water on the wafers, the two jet heads are used to spray the wafers to remove the water, and the two jet nozzles are used on the carrying jig conveyed by the first conveying mechanism The wafers are jetted sideways to remove the water, one of the two jet nozzles jets the wafers in a left jet direction, and the other jets are jetted in a right jet direction opposite to the left jet direction The wafers are jetted. 一種處理方法,適於對一承載治具所承載的多個晶片進行加工處理,該處理方法包含下述步驟:       透過一輸送裝置沿一第一輸送方向輸送該承載治具移動;       透過一蝕刻區以第一藥液對沿著該第一輸送方向移動的各該晶片的多個引腳進行蝕刻;       透過一第一清洗區對沿著該第一輸送方向由該蝕刻區輸出的該等晶片進行清洗;       透過一去氧化區以第二藥液對沿著該第一輸送方向移動的各該晶片的該等引腳產生去氧化反應;及       透過一第二清洗區對沿著該第一輸送方向由該去氧化區輸出的該等晶片進行清洗。A processing method suitable for processing a plurality of wafers carried by a carrier jig. The processing method includes the following steps: conveying the carrier jig movement along a first conveying direction through a conveying device; through an etching area The first chemical solution is used to etch a plurality of pins of each wafer moving along the first conveying direction; through a first cleaning area, the wafers output from the etching area along the first conveying direction are processed Cleaning; through a deoxidation zone, a second chemical solution is used to deoxidize the pins of the wafer moving along the first conveying direction; and through a second cleaning zone pair along the first conveying direction The wafers output from the deoxidation zone are cleaned. 如請求項22所述的處理方法,還包含一位於該第二清洗區清洗該等晶片之後的乾燥步驟,透過一乾燥區以吹熱風方式乾燥該等晶片。The processing method according to claim 22, further comprising a drying step after cleaning the wafers in the second cleaning zone, and drying the wafers by blowing hot air through a drying zone. 如請求項23所述的處理方法,還包含一位於該第二清洗區清洗該等晶片之後且位於該乾燥步驟之前的移除步驟,透過一移除區以第三藥液對沿著該第一輸送方向由該第二清洗區輸出的各該晶片的一金屬保護層產生化學反應以去除該金屬保護層,該處理方法還包含一位於該移除步驟之後且位於該乾燥步驟之前的清洗步驟,透過一第三清洗區對沿著該第一輸送方向由該移除區輸出的該等晶片進行清洗。The processing method according to claim 23, further comprising a removal step after cleaning the wafers in the second cleaning zone and before the drying step, through a removal zone with a third chemical solution along the first A metal protective layer of each wafer output from the second cleaning area in the transport direction generates a chemical reaction to remove the metal protective layer. The processing method further includes a cleaning step after the removing step and before the drying step , Cleaning the wafers output from the removal area along the first conveying direction through a third cleaning area. 如請求項24所述的處理方法,還包含一位於該清洗步驟之後且位於該乾燥步驟之前的中和步驟,透過一中和區以第四藥液對沿著該第一輸送方向由該第三清洗區輸出的各該晶片的一金屬導熱層產生化學反應以中和去除該金屬保護層上所形成的氧化物,該處理方法還包含一位於該中和步驟之後且位於該乾燥步驟之前的清洗步驟,透過一第四清洗區對沿著該第一輸送方向由該中和區輸出的該等晶片進行清洗。The processing method according to claim 24, further comprising a neutralization step located after the cleaning step and before the drying step, passing a neutralization zone with a fourth chemical solution pair along the first conveying direction from the first A metal thermal conductive layer of each of the wafers output from the three cleaning zones generates a chemical reaction to neutralize and remove oxides formed on the metal protective layer. The processing method further includes a process located after the neutralization step and before the drying step In the cleaning step, the wafers output from the neutralization zone along the first conveying direction are cleaned through a fourth cleaning zone. 如請求項23所述的濕式處理設備的處理方法,其中,該輸送裝置是透過一第一輸送機構沿該第一輸送方向輸送該承載治具,還包含一位於該乾燥步驟之後的移載步驟,及一位於該移載步驟之後的回流步驟,在該移載步驟中,透過一移載裝置移載該承載治具至該輸送裝置的一第二輸送機構,在該回流步驟中,透過該第二輸送機構沿一相反於該第一輸送方向的第二輸送方向輸送該承載治具移動。The processing method of the wet processing equipment according to claim 23, wherein the conveying device conveys the carrying jig along the first conveying direction through a first conveying mechanism, and further includes a transfer after the drying step Step, and a reflow step after the transfer step. In the transfer step, the carrying jig is transferred to a second conveying mechanism of the conveying device through a transfer device. In the reflow step, through The second conveying mechanism conveys the carrying jig in a second conveying direction opposite to the first conveying direction. 如請求項22所述的濕式處理設備的處理方法,還包含一位於該蝕刻區蝕刻該等引腳之前的濕潤步驟,透過一濕潤區濕潤該等晶片。The processing method of the wet processing device according to claim 22, further includes a wetting step before etching the pins in the etching area, and wetting the wafers through a wetting area.
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