TW202013064A - Producing method of mask integrated frame and mask for forming oled picture element - Google Patents
Producing method of mask integrated frame and mask for forming oled picture element Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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Abstract
Description
發明領域 本發明是關於一種框架一體型遮罩的製造方法及OLED像素形成用遮罩。更詳而言之,是有關於一種將遮罩與框架一體化且焊接時可減少遮罩之變形以提升位置精准度,藉以準確地進行各遮罩間的對準(align)的框架一體型遮罩的製造方法及OLED像素形成用遮罩。Field of invention The invention relates to a manufacturing method of a frame-integrated mask and a mask for forming OLED pixels. More specifically, it relates to a frame-integrated type that integrates the mask with the frame and reduces the deformation of the mask when welding to improve position accuracy, thereby accurately aligning the masks. Manufacturing method of mask and mask for forming OLED pixels.
發明背景 最近,正在進行薄板製造中的有關電鑄(Electroforming)方法的研究。電鑄方法是在電解液中浸漬陽極和陰極,並施加電源,使金屬薄板在陰極的表面上電鍍,因而是能夠製造電極薄板並且有望大量生産的方法。Background of the invention Recently, research on electroforming methods in the manufacture of thin plates is being conducted. The electroforming method is to impregnate the anode and cathode in the electrolyte, and apply power to make the metal thin plate electroplated on the surface of the cathode, so it is a method capable of manufacturing the electrode thin plate and expected to be mass-produced.
另一方面,作爲OLED製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask)方法,該方法將薄膜形式的金屬遮罩(Shadow Mask,陰影遮罩)緊貼於基板並且在所需位置上沉積有機物。On the other hand, as a technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which closely fits a shadow mask in the form of a thin film to a substrate and is in a desired position Organic matter is deposited on it.
在現有的OLED製造工藝中,將遮罩製造成條狀、板狀等後,將遮罩焊接固定到OLED像素沉積框架並使用。一個遮罩上可以具備與一個顯示器對應的多個單元。另外,爲了製造大面積OLED,可將多個遮罩固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個遮罩,以使其變得平坦。調節拉伸力以使遮罩的整體部分變得平坦是非常困難的作業。特別是,爲了使各個單元全部變得平坦,同時對準尺寸僅爲數μm至數十μm的遮罩圖案,需要微調施加到遮罩各側的拉伸力並且實時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. Multiple units corresponding to one display may be provided on one mask. In addition, in order to manufacture a large-area OLED, a plurality of masks can be fixed to the OLED pixel deposition frame. During the process of fixing to the frame, each mask is stretched to make it flat. It is very difficult to adjust the stretching force to flatten the entire part of the mask. In particular, in order to flatten all the cells and align the mask pattern with a size of only a few μm to several tens of μm, it is necessary to fine-tune the stretching force applied to each side of the mask and confirm the height of the alignment state in real time Claim.
儘管如此,在將多個遮罩固定於一個框架過程中,仍然存在遮罩之間以及遮罩單元之間對準不好的問題。另外,在將遮罩焊接固定於框架的過程中,遮罩膜的厚度過薄且面積大,因此存在遮罩因荷重而下垂或者扭曲的問題,以及焊接過程中因焊接部分發生的皺紋、毛邊(burr)等使遮罩單元的對準錯開的問題等。Nevertheless, in the process of fixing multiple masks to one frame, there is still a problem of poor alignment between the masks and between the mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sags or twists due to load, and wrinkles and burrs that occur in the welded part during the welding process (Burr), etc. problems such as misalignment of the mask unit.
在超高清的OLED中,現有的QHD(Quarter High Definition)畫質為500-600PPI(pixel per inch),像素的尺寸達到約30-50μm,而4K UHD(Ultra High Definition)、8K UHD高清具有比之更高的~860PPI,~1600PPI等的解析度。如此,考慮到超高清的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm程度,超出這一誤差將導致産品的不良,所以產率可能極低。因此,需要開發能夠防止遮罩的下垂或者扭曲等變形並且使對準精確的技術,以及將遮罩固定於框架的技術等。In ultra-high-definition OLED, the existing QHD (Quarter High Definition) image quality is 500-600PPI (pixel per inch), the pixel size reaches about 30-50μm, and 4K UHD (Ultra High Definition), 8K UHD HD has a comparison The higher resolution is ~860PPI, ~1600PPI, etc. In this way, considering the pixel size of the ultra-high-definition OLED, the alignment error between the units needs to be reduced to a degree of several μm. Exceeding this error will result in defective products, so the yield may be extremely low. Therefore, it is necessary to develop a technique capable of preventing deformation such as sagging or twisting of the mask and accurately aligning it, and a technique of fixing the mask to the frame and the like.
發明概要 發明欲解決之課題Summary of the invention Problems to be solved by invention
本發明是爲瞭解決如前述之習知技術的諸問題所研究而成者,其目的在於提供一種遮罩與框架可構成一體型構造之框架一體型遮罩的製造方法。The present invention was developed to solve the problems of the aforementioned conventional technology, and its object is to provide a method for manufacturing a frame-integrated mask in which the mask and the frame can form an integrated structure.
又,本發明之目的在於提供一種防止遮罩下垂或扭曲等的變形,並且可準確地進行對準之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that can prevent deformation such as sagging or twisting of the mask and can be accurately aligned.
又,本發明之目的在於提供一種明顯縮短製造時間,並且使産率顯著提升之框架一體型遮罩的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that significantly reduces manufacturing time and significantly improves productivity.
又,本發明之目的在於提供一種將遮罩黏合於框架上時防止遮罩變形,並且焊接時減少遮罩的變形,以此來提升位置精準度之OLED像素形成用遮罩。 解決課題之方法In addition, an object of the present invention is to provide a mask for forming an OLED pixel that prevents deformation of the mask when the mask is adhered to the frame, and reduces deformation of the mask during welding, thereby improving position accuracy. Ways to solve the problem
本發明之前述目的藉由OLED像素形成用遮罩而達成,其包括形成有多個遮罩圖案之遮罩單元;及位於遮罩單元周邊之虛擬部,虛擬部之至少一部分上形成有相互間隔開地形成之多個焊接部,與各個焊接部相隔規定距離之周圍形成有防皺圖案。The foregoing object of the present invention is achieved by a mask for forming an OLED pixel, which includes a mask unit formed with a plurality of mask patterns; and a dummy part located around the mask unit, at least a part of the dummy part is formed with a mutual spacing A plurality of welded portions formed on the ground are formed with anti-crease patterns around a predetermined distance from each welded portion.
防皺圖案與焊接部爲同心,其至少可佔據具有大於焊接部的直徑之圓周上之區域。The anti-wrinkle pattern is concentric with the welding part, and it can occupy at least an area on the circumference having a diameter larger than that of the welding part.
防皺圖案包括多個單位防皺圖案, 單位防皺圖案可以係圓形、橢圓形中之任一形狀。The anti-wrinkle pattern includes a plurality of unit anti-wrinkle patterns, and the unit anti-wrinkle pattern may be any shape of a circle or an ellipse.
多個單位防皺圖案與焊接部為同心,其至少於直徑大於焊接部的直徑之圓周上之區域上可以相互間隔開地佈置。The plurality of unit anti-crease patterns are concentric with the welded portion, and they may be arranged spaced apart from each other at least on a region on the circumference whose diameter is larger than that of the welded portion.
防皺圖案包括多個單位防皺圖案,單位防皺圖案與焊接部為同心,其形狀可以係包括具有大於焊接部的直徑的圓周的至少一部分。The anti-wrinkle pattern includes a plurality of unit anti-wrinkle patterns, the unit anti-wrinkle pattern is concentric with the welded portion, and its shape may include at least a part of the circumference having a diameter larger than the diameter of the welded portion.
一個單位防皺圖案之形狀可以係密閉圖案形狀,該密閉圖案形狀連接與特定焊接部為同心且直徑大於特定焊接部的直徑的圓周之至少一部分以及與相鄰於特定焊接部之焊接部為同心且直徑大於相鄰的焊接部的圓周之至少一部分。The shape of a unit anti-crease pattern may be a closed pattern shape, which is concentric with at least a part of the circumference concentric with the specific welding portion and having a diameter greater than the diameter of the specific welding portion, and concentric with the welding portion adjacent to the specific welding portion And the diameter is larger than at least a part of the circumference of the adjacent welded portion.
相鄰的一雙單位防皺圖案可以係還包括互相面對且平行的邊之密閉圖案形狀。An adjacent pair of unit anti-crease patterns may further include a closed pattern shape with sides facing and parallel to each other.
防皺圖案包括多個單位防皺圖案,且單位防皺圖案之形狀可以係密閉圖案形狀,該密閉圖案形狀連接與焊接部位爲同心且直徑大於焊接部之第一直徑之圓周的至少一部分以及具有大於第一直徑之第二直徑的圓周的至少一部分。The anti-wrinkle pattern includes a plurality of unit anti-wrinkle patterns, and the shape of the unit anti-wrinkle pattern may be a closed pattern shape that connects at least a part of the circumference of the circumference that is concentric with the welding site and has a diameter greater than the first diameter of the welding part and has At least a portion of the circumference of the second diameter larger than the first diameter.
多個單位防皺圖案之間可相互間隔開地佈置,藉以圍繞一個焊接部。A plurality of unit anti-crease patterns may be arranged spaced apart from each other, thereby surrounding one welding part.
防皺圖案與遮罩圖案之間相互間隔開地形成,且還可包括寬大於遮罩圖案之寬的多個緩衝圖案。The anti-crease pattern and the mask pattern are formed spaced apart from each other, and may further include a plurality of buffer patterns having a width greater than that of the mask pattern.
單位緩衝圖案之形狀係圓形、橢圓形中之任一形狀。The shape of the unit buffer pattern is any one of a circle and an ellipse.
而且,本發明之前述目的可藉由至少一個遮罩與支撐遮罩的框架形成為一體的框架一體型遮罩的製造方法而達成,前述框架一體型遮罩的製造方法包括:(a)提供具備至少一個遮罩單元區域之框架的步驟; (b)將遮罩附著於托盤上的步驟;(c)在框架上裝載托盤,且將遮罩對應於框架的遮罩單元區域的步驟,及(d)向遮罩的焊接部照射鐳射使遮罩黏合於框架的步驟, 遮罩包括形成有多個遮罩圖案之遮罩單元;及位於遮罩單元周邊之虛擬部, 虛擬部之至少一部分上形成有相互間隔開地形成之多個焊接部,與各個焊接部相隔規定距離之周圍形成有防皺圖案。Moreover, the aforementioned object of the present invention can be achieved by a method of manufacturing a frame-integrated mask in which at least one mask and a frame supporting the mask are formed as an integrated body, the method of manufacturing the frame-integrated mask includes: (a) providing The step of having a frame with at least one mask unit area; (b) the step of attaching the mask to the tray; (c) the step of loading the tray on the frame and covering the mask unit area corresponding to the frame, and (D) The step of irradiating laser to the welding part of the mask to make the mask adhere to the frame, the mask includes a mask unit formed with a plurality of mask patterns; and a virtual part located around the mask unit, at least a part of the virtual part A plurality of welded portions formed spaced apart from each other are formed thereon, and a wrinkle-preventing pattern is formed around each welded portion at a predetermined distance.
(b)步驟可以係將遮罩附著於托盤上之後,在框架上裝載托盤,且將遮罩對應於框架的遮罩單元區域的步驟。(B) The step may be a step of loading the tray on the frame after attaching the mask to the tray and corresponding to the mask unit area of the frame.
防皺圖案與焊接部爲同心,且至少可佔據直徑大於焊接部的直徑之圓周上的區域。The anti-wrinkle pattern is concentric with the welded portion, and can occupy at least an area on the circumference whose diameter is larger than the diameter of the welded portion.
防皺圖案與遮罩圖案之間相互間隔開地形成,且還可包括寬大於遮罩圖案之寬的多個緩衝圖案。 發明效果The anti-crease pattern and the mask pattern are formed spaced apart from each other, and may further include a plurality of buffer patterns having a width greater than that of the mask pattern. Invention effect
根據如前述構成之本發明,遮罩與框架可構成一體型結構。According to the present invention constructed as described above, the cover and the frame can form an integrated structure.
又,根據本發明,可防止遮罩下垂或扭曲等的變形,並且可準確地進行對準。In addition, according to the present invention, deformation such as sagging or twisting of the mask can be prevented, and alignment can be accurately performed.
又,根據本發明,可使製造時間顯著地縮短,且使產率顯著上昇。In addition, according to the present invention, the manufacturing time can be significantly shortened, and the yield can be significantly increased.
又,根據本發明,將遮罩黏合於框架上時防止遮罩變形,且焊接時減少遮罩的變形,藉以可提升位置精準度。Moreover, according to the present invention, deformation of the mask is prevented when the mask is adhered to the frame, and deformation of the mask is reduced during welding, thereby improving position accuracy.
較佳實施例之詳細說明 後述的對於本發明的詳細說明將參照附圖,該附圖將能夠實施本發明的特定實施例作爲示例示出。充分詳細地說明這些實施例,以使所屬技術領域中具有通常知識者能夠實施本發明。應當理解,本發明的各種實施例雖然彼此不同,但是並非相互排斥。例如,在此記載的特定形狀、結構及特性與一實施例有關,在不脫離本發明的精神及範圍的情況下,能夠實現為其他實施例。另外,應當理解,各個公開的實施例中的個別構成要素的位置或配置,在不脫離本發明的精神及範圍的情況下,能夠進行變更。因此,後述的詳細說明不應被視爲具有限制意義,只要適當地說明,則本發明的範圍僅由所附的申請專利範圍及與其等同的所有範圍限定。圖中相似的符號從多方面表示相同或相似的功能,爲了方便起見,長度、面積、厚度及其形狀可以誇大表示。Detailed description of the preferred embodiment The detailed description of the present invention described later will refer to the accompanying drawings, which show specific embodiments capable of implementing the present invention as examples. These embodiments are described in sufficient detail to enable those skilled in the art to implement the present invention. It should be understood that although the various embodiments of the present invention are different from each other, they are not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented as other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be regarded as limiting, and as long as it is properly described, the scope of the present invention is limited only by the scope of the attached patent application and all ranges equivalent thereto. Similar symbols in the figure represent the same or similar functions in many ways. For convenience, the length, area, thickness, and shape can be exaggerated.
以下,將參照附圖對本發明的優選實施例進行詳細說明,以便所屬技術領域中具有通常知識者能夠容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.
圖1是示出現有的OLED像素沉積用遮罩的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition.
參照圖1,現有的遮罩10可以以條式(Stick-Type)或者板式(Plate-Type)製造。圖1的(a)中示出的遮罩10作為條式遮罩,可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1的(b)中示出的遮罩100作爲板式遮罩,可以使用於大面積的像素形成工藝。Referring to FIG. 1, the existing
遮罩10的主體(Bod,或者遮罩膜11)具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器(display)對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。放大單元C時,顯示與R、G、B對應的多個像素圖案P。作為一例,在單元C中形成有像素圖案P,以便具有70×140解析度。即,大量的像素圖案P形成集合,以構成一個單元C,並且多個單元C可以形成於遮罩10。The main body (Bod, or mask film 11) of the
圖2是示出現有的將遮罩10黏合於框架20的過程的概略圖。圖3是示出在現有的拉伸F1~F2遮罩10的過程中發生單元之間的對準誤差的概略圖。以圖1的(a)示出的具備6個單元C(C1~C6)的條式遮罩10為例進行說明。FIG. 2 is a schematic diagram showing a conventional process of bonding the
參照圖2的(a),首先,應將條式遮罩10平坦地展開。沿著條式遮罩10的長軸方向施加拉伸力F1~F2,隨著拉伸,展開條式遮罩10。在該狀態下,將條式遮罩10裝載於方框形狀的框架20上。條式遮罩10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式遮罩10的單元C1~C6位於框內部空白區域,也可以足以使多個條式遮罩10的單元C1~C6位於框內部空白區域。Referring to (a) of FIG. 2, first, the
參照圖2的(b),微調施加到條式遮罩10的各側的拉伸力F1~F2,同時對準後,隨著焊接W條式遮罩10側面的一部分,將條式遮罩10和框架20彼此連接。圖2的(c)示出彼此連接的條式遮罩10和框架的側截面。Referring to (b) of FIG. 2, finely adjust the tensile forces F1 to F2 applied to each side of the
參照圖3,儘管微調施加到條式遮罩10的各側的拉伸力F1~F2,但是顯示出遮罩單元C1~C3彼此之間對準不好的問題。例如,單元C1~C3的圖案P之間的距離D1~D1”、D2~D2”彼此不同,或者圖案P歪斜。由於條式遮罩10具有包括多個(作為一例,為6個)單元C1~C6的大面積,且具有數十μm的非常薄的厚度,因此容易因荷重而下垂或者扭曲。另外,調節拉伸力F1~F2,以使各個單元C1~C6全部變得平坦,同時通過顯微鏡實施確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3, although fine adjustments of the stretching forces F1 to F2 applied to the sides of the
因此,拉伸力F1~F2的微小誤差可能引起條式遮罩10各單元C1~C3的拉伸或者展開程度的誤差,由此,導致遮罩圖案P之間的距離D1~D1”、D2~D2”不同。雖然完美地對準以使誤差為0是非常困難的,但是爲了避免尺寸爲數μm至數十μm的遮罩圖案P對超高清OLED的像素工藝造成壞影響,對準誤差優選不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Therefore, a slight error in the stretching forces F1 to F2 may cause an error in the degree of stretching or unfolding of the units C1 to C3 of the
另外,將大概6-20個條式遮罩10分別連接在一個框架20,同時使多個條式遮罩10之間,以及條式遮罩10的多個單元C-C6之間的對準狀態精確是非常困難的作業,並且只能增加基於對準的工藝時間,這成爲降低生産性的重要理由。In addition, approximately 6-20
另一方面,將條式遮罩10連接固定到框架20後,施加到條式遮罩10的拉伸力F1~F2能夠反向地作用於框架20。即,由於拉伸力F1~F2而繃緊拉伸的條式遮罩10連接在框架20後,能夠將張力(tension)作用於框架20。通常,該張力不大,不會對框架20產生大的影響,但是在框架20的尺寸實現小型化且剛性變低的情況下,這種張力可能使框架20細微變形。如此,可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the
鑒於此,本發明提出能夠使遮罩100與框架200形成一體式結構的框架200以及框架一體型遮罩。與框架200形成一體的遮罩100能夠防止下垂或者扭曲等變形,並且精確地對準於框架200。當遮罩100連接到框架200時,不對遮罩100施加任何拉伸力,因此遮罩100連接到框架200後,可以不對遮罩200施加引起變形的張力。並且,能夠顯著地縮短將遮罩100一體地連接到框架200上的製造時間,並且顯著提升產率。In view of this, the present invention proposes a
圖4是示出本發明的一實施例涉及的框架一體型遮罩的主視圖(圖4的(a))以及側剖視圖(圖4的(b)),圖5是示出本發明的一實施例涉及的框架的主視圖(圖5的(a))以及側剖視圖(圖5的b)。4 is a front view (FIG. 4(a)) and a side cross-sectional view (FIG. 4(b)) showing a frame-integrated mask according to an embodiment of the present invention, and FIG. 5 is a diagram showing a part of the present invention. A front view ((a) of FIG. 5) and a side cross-sectional view (b of FIG. 5) of the frame according to the embodiment.
參照圖4以及圖5,框架一體型遮罩可以包括多個遮罩100以及一個框架200。換句話說,將多個遮罩100分別黏合於框架200的形態。以下,爲了便於說明,以四角形狀的遮罩100為例進行說明,但是遮罩100在黏合於框架200之前,可以是兩側具備用於夾持的突出部的條式遮罩形狀,黏合於框架200後,可以去除突出部。4 and 5, the frame-integrated mask may include a plurality of
各個遮罩100上形成有多個遮罩圖案P,一個遮罩100可以形成有一個單元C。一個遮罩單元C可以與智慧手機等的一個顯示器對應。遮罩100可以以電鑄(electroforming)方式形成,以便能夠以薄的厚度形成。遮罩100可以是熱膨脹係數約為1.0×10-6
/℃的恆範鋼(invar)或約為1.0×10-7
/℃的超恆範鋼(super invar)材料。由於這種材料的遮罩100的熱膨脹係數非常低,遮罩的圖案形狀因熱能變形的可能性小,在製造高解析度的OLED中,可以用作FMM、陰影遮罩(Shadow Mask)。此外,考慮到最近開發在溫度變化值不大的範圍內實施像素沉積工藝的技術,遮罩100也可以是熱膨脹係數比之略大的鎳(Ni)、鎳-鈷(Ni-Co)等材料。遮罩的厚度可以為2μm至50μm。A plurality of mask patterns P are formed on each
框架200可以以黏合多個遮罩100的形式形成。包括最週邊邊緣在內,框架200可以包括沿著第一方向(例如,橫向)、第二方向(例如,竪向)形成的多個角部。這種多個角部可以在框架200上劃分待黏合遮罩100的區域。The
框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即,邊緣框架部210可以包括中空區域R。框架200可以由恆範鋼、超恆範鋼、鋁、鈦等金屬材料形成,考慮到熱變形,優選由與遮罩具有相同熱膨脹係數的恆範鋼、超恆範鋼、鎳、鎳-鈷等材料形成,這些材料均可應用於所有作為框架200的構成要素的邊緣框架部210、遮罩單元片材部220。The
另外,框架200具備多個遮罩單元區域CR,並且可以包括連接到邊緣框架部210的遮罩單元片材部220。遮罩單元片材部220可以與遮罩100相同地通過電鑄形成,或者通過使用其他的成膜工藝形成。另外,遮罩單元片材部220可以通過鐳射劃綫、蝕刻等在平面狀片材(sheet)上形成多個遮罩單元區域CR後,連接到邊緣框架部210。或者,遮罩單元片材部220可以將平面狀的片材連接到邊緣框架部210後,通過鐳射劃線、蝕刻等形成多個遮罩單元區域CR。本說明書中主要對首先在遮罩單元片材部220形成多個遮罩單元區域CR後,連接到邊緣框架部210的情況進行說明。In addition, the
遮罩單元片材部220可以包括邊緣片材部221以及第一柵格片材部223、第二柵格片材部225中的至少一種。邊緣片材部221以及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,它們彼此之間形成為一體。The mask
邊緣片材部221可以實質上連接到邊緣框架部210上。因此,邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The
另外,第一柵格片材部223可以沿著第一方向(橫向)延伸形成。第一柵格片材部223以直綫形態形成,其兩端可以連接到邊緣片材部221。當遮罩單元片材部220包括多個第一柵格片材部223時,各個第一柵格片材部223優選具有相同的間距。In addition, the first
另外,進一步地,第二柵格片材部225可以沿著第二方向(竪向)延伸形成,第二柵格片材部225以直綫形態形成,其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當遮罩單元片材部220包括多個第二柵格片材部225時,各個第二柵格片材部225之間優選具有相同的間距。In addition, further, the second
另一方面,第一柵格片材部223之間的間距和第二柵格片材部225之間的間距,可以根據遮罩單元C的尺寸相同或不同。On the other hand, the pitch between the first
第一柵格片材部223及第二柵格片材部225雖然具有薄膜形態的薄的厚度,但是垂直於長度方向的截面的形狀可以是諸如矩形、平行四邊形的四角形形狀、三角形形狀等,邊、角的一部分可以形成圓形。截面形狀可以在鐳射劃綫、蝕刻等過程中進行調節。Although the first
邊緣框架部210的厚度可以大於遮罩單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性,可以以數mm至數十cm的厚度形成。The thickness of the
就遮罩單元片材部220而言,實質上製造厚片材的工藝比較困難,若過厚,則有可能在OLED像素沉積工藝中有機物源600(參照圖23)堵塞通過遮罩100的路徑。相反,若過薄,則有可能難以確保足以支撐遮罩100的剛性。由此,遮罩單元片材部220優選比邊緣框架部210的厚度薄,但是比遮罩100更厚。遮罩單元片材部220的厚度可以約為0.1mm至1mm。並且,第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。For the mask
在平面狀片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個遮罩單元區域CR(CR11~CR56)。從另一個角度來說,遮罩單元區域CR可以是指在邊緣框架部210的中空區域R中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the area occupied by the
隨著遮罩100的單元C與該遮罩單元區域CR對應,實質上可以用作通過遮罩圖案P沉積OLED的像素的通道。如前所述,一個遮罩單元C與智慧手機等的一個顯示器對應。一個遮罩100中可以形成有用於構成一個單元C的遮罩圖案P。或者,一個遮罩100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應,但是爲了精確地對準遮罩100,需要避免大面積遮罩100,較佳為具備一個單元C的小面積遮罩100。或者,也可以是具有多個單元C的一個遮罩100與遮罩200的一個單元區域CR對應。此時,爲了精確地對準,可以考慮具有2-3個少數單元C的遮罩100與遮罩200的一個單元區域CR對應。As the cell C of the
遮罩200具備多個遮罩單元區域CR,可以將各個遮罩100以各個遮罩單元C與各個遮罩單元區域CR分別對應的方式黏合。各個遮罩100可以包括形成有多個遮罩圖案P的遮罩單元C以及遮罩單元C周邊的虛擬部(相當於除了單元C以外的遮罩膜110部分)。虛擬部可以只包括遮罩膜110,或者可以包括形成有與遮罩圖案P類似形態的規定的虛擬圖案的遮罩膜110。遮罩單元C與框架200的遮罩單元區域CR對應,虛擬部的一部分或者全部可以黏合於框架200(遮罩單元片材部220)。由此,遮罩100和框架200可以形成一體式結構。The
另一方面,根據另一實施例,框架不是以將遮罩單元片材部220黏合於邊緣框架部210的方式製造,而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架(相當於柵格片材部223、225)的框架。這種形態的框架也包括至少一個遮罩單元區域CR,可以使遮罩100與遮罩單元區域CR對應,以製造框架一體型遮罩。On the other hand, according to another embodiment, the frame is not manufactured by adhering the mask
以下,對框架一體型遮罩的製造過程進行說明。Hereinafter, the manufacturing process of the frame-integrated mask will be described.
首先,可以提供圖4以及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的概略圖。First, the
參照圖6的(a),提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6, an
其次,參照圖6的(b),製造遮罩單元片材部220。遮罩單元片材部220使用電鑄或者其他的成膜工藝製造平面狀的片材後,通過鐳射劃綫、蝕刻等,去除遮罩單元區域CR部分,從而可以製造。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。可以存在5個第一柵格片材部223及4個第二柵格片材部225。Next, referring to (b) of FIG. 6, the mask
其次,可以將遮罩單元片材部220對應於邊緣框架部210。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220的所有側部以使遮罩單元片材部220平坦伸展的狀態下,使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點(作為圖6的(b)的例,1~3點)夾持遮罩單元片材部220並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220。Second, the mask
然後,使遮罩單元片材部220與邊緣框架部210對應時,可以焊接W方式黏合遮罩單元片材部220的邊緣片材部221。優選地,焊接W所有側部,以便遮罩單元片材部220牢固地黏合於邊緣框架部210。應當最大限度地接近框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220之間的翹起空間,並提升黏合性。焊接W部分可以以線(line)或者點(spot)形狀生成,具有與遮罩單元片材部220相同的材料,並可以成為將邊緣框架部210和遮罩單元片材部220連接成一體的媒介。Then, when the mask
圖7是示出本發明的另一實施例涉及的框架的製造過程的概略圖。圖6的實施例首先製造具備遮罩單元區域CR的遮罩單元片材部220後,黏合於邊緣框架部210,而圖7的實施例將平面狀的片材黏合於邊緣框架部210後,形成遮罩單元區域CR部分。7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. The embodiment of FIG. 6 first manufactures the mask
首先,與圖6的(a)相同地提供包括中空區域R的邊緣框架部210。First, the
然後,參照圖7的(a),可以使平面狀的片材(平面狀的遮罩單元片材部220’)與邊緣框架部210對應。遮罩單元片材部220’是還未形成遮罩單元區域CR的平面狀態。在對應的過程中,可以在拉伸F1~F4遮罩單元片材部220’的所有側部以使遮罩單元片材部220’平坦伸展狀態下,使其與邊緣框架部210對應。在一側部也能以多個點(作為圖7的(a)的例,1~3點)夾持單元片材部220’並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2遮罩單元片材部220’。Then, referring to (a) of FIG. 7, a planar sheet (planar mask unit sheet portion 220') may correspond to the
然後,使遮罩單元片材部220’與邊緣框架部210對應時,可以將遮罩單元片材部220’的邊緣部分以焊接W方式進行黏合。優選地,焊接W所有側部,以便遮罩單元片材部220’牢固地黏合於邊緣框架部220。應當最大限度地接近邊緣框架部210的角部側進行焊接W,才能最大限度地減少邊緣框架部210和遮罩單元片材部220’之間的翹起空間,並提升黏合性。焊接W部分可以以線(line)或者點(spot)形狀生成,與遮罩單元片材部220’具有相同材料,並可以成為將邊緣框架部210和遮罩單元片材部220’連接成一體的媒介。Then, when the mask unit sheet portion 220' corresponds to the
然後,參照圖7的(b),在平面狀的片材(平面狀的遮罩單元片材部220’)上形成遮罩單元區域CR。通過鐳射劃線、蝕刻等,去除遮罩單元區域CR部分的片材,藉以可以形成遮罩單元區域CR。本說明書中,以形成6×5的遮罩單元區域CR(CR11~CR56)為例進行說明。當形成遮罩單元區域CR時,可以構成遮罩單元片材部220,其中,與邊緣框架部210焊接W的部分成為邊緣片材部221,並且具備5個第一柵格片材部223以及4個第二柵格片材部225。Then, referring to (b) of FIG. 7, a mask unit region CR is formed on a planar sheet (planar mask unit sheet portion 220'). The mask unit region CR can be formed by removing a sheet of the mask unit region CR by laser scribing, etching, or the like. In this specification, an example will be described in which 6×5 mask cell regions CR (CR11 to CR56) are formed. When the mask unit region CR is formed, the mask
圖8是示出本發明之一實施例涉及之遮罩100的形狀及將遮罩100附著於托盤50上的狀態的概略圖。FIG. 8 is a schematic diagram showing the shape of the
參照圖8的(a),可以提供形成有多個遮罩圖案P的遮罩100。遮罩100可包括形成有多個遮罩圖案P的遮罩單元C及遮罩單元C周邊之虛擬部DM。虛擬部DM與除單元C以外的遮罩膜110部分對應,可以只包括遮罩膜110,或可以包括形成有與遮罩圖案P形態類似的規定的虛擬部圖案之遮罩膜110。與遮罩100之邊緣對應地,虛擬部DM的一部分或者全部可黏合於框架200[遮罩單元片材部220]。可以電鑄方式製造恆範鋼、超恆範鋼材料之遮罩100。Referring to (a) of FIG. 8, a
電鑄中,用作陰極(cathode)的母板(mother plate)使用導電性材料。作爲導電性材料,金屬可以在表面上生成金屬氧化物,可以在製造金屬過程中流入有雜質,多晶矽基材可以存在夾雜物或者晶界(Grain Boundary),導電性高分子基材含有雜質的可能性高,並且強度、耐酸性等可能脆弱。將諸如金屬氧化物、雜質、夾雜物、晶界等的妨礙在母板(或者陰極)表面均勻形成電場的要素稱爲“缺陷”(Defect)。由於缺陷(Defect),無法對上述材料的陰極施加均勻的電場,有可能導致不均勻地形成一部分鍍膜(遮罩100)。In electroforming, a conductive material is used as a mother plate used as a cathode. As a conductive material, metal can generate metal oxides on the surface, impurities can flow into the metal manufacturing process, polysilicon substrates can contain inclusions or grain boundaries (Grain Boundary), conductive polymer substrates may contain impurities High performance, and may be weak in strength and acid resistance. Elements such as metal oxides, impurities, inclusions, and grain boundaries that hinder the uniform formation of an electric field on the surface of the motherboard (or cathode) are called "defects". Due to defects, a uniform electric field cannot be applied to the cathode of the above-mentioned material, which may result in uneven formation of a part of the plating film (mask 100).
在實現UHD級別以上的超高畫質像素中,鍍膜及鍍膜圖案(遮罩圖案P)的不均勻,有可能對形成像素產生不好的影響。例如,目前QHD畫質的情況爲500~600 PPI(pixel per inch),像素尺寸達到約30~50㎛,4K UHD、8K UHD高畫質的情況具有比前者高的~860 PPI、~1600 PPI等的解析度。直接適用於VR機器上的微顯示器或者插入到VR機器而使用的微顯示器以約2000 PPI以上級別的超高畫質爲目標,像素的尺寸約為5~10㎛。FMM、陰影遮罩的圖案寬度可以形成為數μm至數十μm尺寸,優選小於30μm的尺寸,因此數μm尺寸的缺陷也是在遮罩的圖案尺寸中佔據很大比重程度的尺寸。另外,爲了去除上述材料的陰極的缺陷,可以進行用於去除金屬氧化物、雜質等的附加的工藝,該過程中有可能又引發陰極材料被蝕刻等的其他缺陷。In ultra-high-quality pixels that achieve UHD level or higher, the unevenness of the coating and the coating pattern (mask pattern P) may have a bad influence on the formation of pixels. For example, the current QHD image quality is 500~600 PPI (pixel per inch), the pixel size reaches about 30~50㎛, 4K UHD, 8K UHD high image quality has higher than the former ~860 PPI, ~1600 PPI Resolution. Directly applicable to micro-displays on VR machines or micro-displays used when plugged into VR machines, the ultra-high image quality of about 2000 PPI or higher is targeted, and the pixel size is about 5~10㎛. The pattern width of the FMM and the shadow mask can be formed to a size of several μm to several tens of μm, preferably a size smaller than 30 μm. Therefore, defects with a size of several μm also occupy a large proportion of the pattern size of the mask. In addition, in order to remove the defects of the cathode of the above-mentioned material, an additional process for removing metal oxides, impurities, etc. may be performed, in which process other defects such as etching of the cathode material may be caused.
因此,本發明可以使用單晶材料的母板(或者陰極)。特別是,優選為單晶矽材料。可以對單晶矽材料的母板進行1019 /cm3 以上的高濃度摻雜,以便具有導電性。摻雜可以對整個母板進行,也可以僅對母板的表面部分進行。Therefore, the present invention can use a mother substrate (or cathode) of single crystal material. In particular, it is preferably a single crystal silicon material. The mother board of single crystal silicon material can be doped with a high concentration of 10 19 /cm 3 or more in order to have conductivity. The doping may be performed on the entire mother board or only on the surface part of the mother board.
另外,單晶材料可使用Ti,Cu,Ag等金屬;GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體;石墨(graphite)、石墨烯(graphene)等碳材料;包含CH3 NH3 PbCl3 、 CH3 NH3 PbBr3 、CH3 NH3 PbI3 、SrTiO3 等之鈣鈦礦(perovskite)結構等超導電體用單晶陶瓷;飛行器零部件用單晶超耐熱合金等。金屬、碳材料基本上是導電性材料。半導體材料的情況,爲了具有導電性,可執行1019以上的高濃度摻雜。其他材料可藉由執行摻雜或形成氧空位(oxygen vacancy)等,藉以形成導電性。摻雜可對母板的整體上進行,亦可僅對母板的表面部分進行。In addition, single crystal materials can use metals such as Ti, Cu, Ag; GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge and other semiconductors; graphite (graphite), graphene (graphene) and other carbon materials; including CH 3 superconductor NH 3 PbCl 3, CH 3 NH 3 PbBr 3, CH 3 NH 3 PbI 3, SrTiO 3 , etc. perovskite (Transition of perovskite) single crystal ceramic structure; aircraft parts and the like with the single crystal superalloy. Metal and carbon materials are basically conductive materials. In the case of semiconductor materials, in order to have conductivity, a high concentration doping of 1019 or more can be performed. Other materials can form conductivity by performing doping or forming oxygen vacancy. The doping may be performed on the entire motherboard or only on the surface portion of the motherboard.
單晶材料由於沒有缺陷,電鑄時在表面全部形成均勻的電場,因此生成均勻的鍍膜(遮罩100)。通過均勻的鍍膜而製造的框架一體型遮罩100、200可以進一步改善OLED像素的畫質水準。並且,由於無需進行去除、消除缺陷的附加工藝,能夠降低工藝費用,並提升生産性。Since the single crystal material has no defects, a uniform electric field is formed on the entire surface during electroforming, so a uniform plating film (mask 100) is generated. The frame-integrated
另外,若是藉由矽材料或藉由氧化(Oxidation)、氮化(Nitridation)可在表面形成絕緣薄膜之單晶材料,則具有根據需要只藉由母板的表面氧化、氮化過程就可以形成絕緣部的優點。絕緣部也可以使用光刻膠形成。在形成有絕緣部的部分中,防止鍍膜(遮罩100)的電沉積,並且在鍍膜上形成圖案(遮罩圖案P)。In addition, if it is a single crystal material that can form an insulating film on the surface by silicon material or by oxidation (Oxidation), nitridation (Nitridation), it can be formed only by the surface oxidation and nitridation process of the motherboard as needed Advantages of insulation. The insulating portion may be formed using photoresist. In the portion where the insulating portion is formed, electrodeposition of the plating film (mask 100) is prevented, and a pattern (mask pattern P) is formed on the plating film.
另外, 本發明母板的材料只要在降低陰極的缺陷之範圍內,並不一定要局限於上述之單晶材料,特以明示。In addition, as long as the material of the mother board of the present invention is within the range of reducing the defects of the cathode, it is not necessarily limited to the above single crystal material, and it is specifically stated.
遮罩圖案P的寬度可以小於40μm,遮罩100的厚度可以約為2~50μm。由於框架200具備多個遮罩單元區域CR(CR11~CR56),因此也可以形成多個具有與各個遮罩單元區域CR(CR11~CR56)分別對應的遮罩單元C(C11~56)的遮罩100。The width of the mask pattern P may be less than 40 μm, and the thickness of the
遮罩100藉由鐳射焊接可黏合於框架200上。鐳射L可照射於遮罩100之焊接部WP。焊接部WP可以表示被鐳射L照射而形成焊接焊珠WB之目標區域。焊接部WP可相當於遮罩100的邊緣或者虛擬部DM的部分的至少一部分區域。以下,假設在多個焊接部WP於遮罩100的虛擬部DM區域相隔一定距離地佈置,且焊接部WP形態大體是圓形來進行說明,但並不一定局限於此,特以明示。The
另外,本發明的遮罩100的特徵在於,焊接部WP的周圍形成有防皺圖案150~170。防皺圖案150~170的特徵在於,向焊接部WP照射鐳射L以形成焊接焊珠WB之過程中,防止由於焊接部WP的周邊被扭曲或收縮等發生的變形[參照圖14及圖15]。In addition, the
防皺圖案150~17與遮罩圖案P相似,與遮罩100的虛擬部DM[或者邊緣部]上形成的孔洞(hole)相同,可在形成遮罩圖案P的過程中同樣地形成 防皺圖案150~17。作為一例,可以是在遮罩100的電鑄過程中,如遮罩圖案P那樣沒有形成鍍敷膜110的部分,或是執行遮罩100的電鑄之後,藉由圖案形成工藝而形成的部分。The
防皺圖案150~170形成於與焊接部WP相隔規定距離的周圍,整體上可佈置成圍繞焊接部WP,或佈置於焊接部WP的兩側。爲了方便說明, 圖8的(a)雖圖示防皺圖案150~170爲簡單的圖案,但各種實施例涉及的具體形狀將在後面參照圖9至圖12進行說明。The
然後,參照圖8的(b)及(c),將準備好之遮罩100可附著於托盤50’(tray)上。可以從母板剝離電鍍的遮罩100,並將其附著於托盤50’上。爲了使遮罩100附著於在托盤50’的一面時不産生褶皺、皺紋而平坦地展開,可利用靜電力、磁力、真空等。托盤50’可以是使鐳射光L透過之玻璃材料。Then, referring to (b) and (c) of FIG. 8, the
圖9至圖12是示出本發明的多個實施例涉及之遮罩的防皺圖案150~170的概略圖。圖9至圖12是圖8的D部分之放大部分。爲了便於理解,將包括遮罩圖案P的遮罩單元C圖示於右側部分,但,與遮罩圖案P相對應的防皺圖案150~170、緩衝圖案190的圖案尺寸、圖案佈置位置等並不限於圖9至圖12中所示出的,特以明示。9 to 12 are schematic diagrams showing
參照圖9至圖12,防皺圖案150~170可以形成於與焊接部WP相隔規定距離的周圍。一實施例中,防皺圖案150~170與焊接部WP為同心WPC,其可佔據直徑R2、R3大於焊接部WP的直徑R1之假設的圓AC的圓周上的區域。佔據直徑R2、R3大於焊接部WP的直徑R1的圓周的區域之形態係,當圓周上佈置有單位防皺圖案時,可形成為單位防皺圖案包括圓周的一部分本身形態等。Referring to FIGS. 9 to 12,
參照圖9,第一實施例的防皺圖案150可包括多個單位防皺圖案151。爲了容易地分散施加於遮罩100膜的壓力、張力等,多個單位防皺圖案151相比於具有棱角的形態,優選為圓形、橢圓等具有曲率的形態。Referring to FIG. 9, the
多個單位防皺圖案151相互間隔開地佈置,且與焊接部WP為同心WPC,且可佈置於直徑R2大於焊接部WP的直徑R1的之假設的圓AC的圓周上。單位防皺圖案151可在焊接部WP的周圍佈置成1重,亦可以佈置成2重或3重。The plurality of unit
除了防皺圖案150以外,還可以形成有多個緩衝圖案190。緩衝圖案190可相互間隔開地形成於防皺圖案150與遮罩圖案P之間。緩衝圖案190可沿著虛擬部DM區域之內側邊緣佈置。In addition to the
緩衝圖案190並不圍繞焊接部WP的周邊,因此起到較大範圍內分散施加於遮罩100膜的壓力、張力等的作用。因此,可具有比遮罩圖案P的寬更大的寬度,且可以具有比防皺圖案150~170更大的寬度。而且,緩衝圖案190包括多個單位緩衝圖案191、192,單位緩衝圖案191、192亦相比於具有棱角的形態,優選為圓形、橢圓等具有曲率的形態。The
根據一實施例,第一單位緩衝圖案191可佈置於穿過一雙防皺圖案150的中間之水平軸上。而且,第二單位緩衝圖案192可佈置於與第一單位緩衝圖案191相同的水平軸上,還可以佈置於穿過一雙第一單位緩衝圖案191的中間的水平軸上。但是,其佈置形態並非限於這些。According to an embodiment, the first
參照圖10,第二實施例的防皺圖案160可包括多個單位防皺圖案161。Referring to FIG. 10, the
多個單位防皺圖案161相互間隔開地佈置,且與焊接部WP為同心WPC,其形狀是包括假設的圓AC的圓周的至少一部分162、163,上述假設的圓AC的直徑R2大於焊接部WP的直徑R1。換而言之,一單位防皺圖案161可包括:與特定焊接部WP1為同心WPC且直徑大於特定焊接部WP1的直徑R2的圓周的至少一部分162;以及與相鄰於特定焊接部WP1的焊接部WP2為同心WPC且直徑大於相鄰的焊接部WP2的直徑R2的圓周的至少一部分163。單位防皺圖案161除了圓周的至少一部分162、163以外還可包括連接它們的角部164、165,因此可以具有密閉圖案形狀。由於單位防皺圖案161包括與焊接部WP相隔一定距離之曲率局部162、163,因此具有容易分散施加於焊接部WP的壓力、張力等的優點。A plurality of unit
參照圖11,第三實施例涉及的防皺圖案160’可包括多個單位防皺圖案161’。Referring to FIG. 11, the anti-crease pattern 160' according to the third embodiment may include a plurality of unit anti-crease patterns 161'.
第三實施例涉及的防皺圖案160’與第二實施例涉及的防皺圖案160相似,可包括曲率局部162、163。惟,防皺圖案160’的形狀可以是除了包括曲率局部162、163及將其相連接之角部164、165以外,還包括相互面對之平行邊166的密閉圖案形狀。由於單位防皺圖案161包括與焊接部WP相隔一定距離的曲率局部162、163,因此,具有容易分散施加於焊接部WP之壓力、張力等的優點。The anti-crease pattern 160' according to the third embodiment is similar to the
參照圖12,第四實施例涉及的防皺圖案170可包括多個單位防皺圖案171。Referring to FIG. 12, the
單位防皺圖案171與焊接部WP為同心WPC,其可具有包括假設的圓周的至少一部分172與假設的圓周的至少一部分173之形狀,上述至少一部分172是具有比焊接部WP的直徑R1大的第一直徑R2之假設的圓周的至少一部分,上述至少一部分173是具有比第一直徑R1大的第二直徑R3的假設的圓周的至少一部分。單位防皺圖案171除了包括圓周的至少一部分172、173之外,還包括用於連接它們的角部174、175,藉以可具有密閉圖案形狀。The
多個單位防皺圖案171之間有間隔,且可佈置成圍繞一焊接部WP。單位防皺圖案171可在焊接部WP周圍佈置成1重,亦可以佈置成2重、3重。單位防皺圖案171包括與焊接部WP相隔一定距離的曲率局部172、173,且佈置成圍繞焊接部WP,因此具有容易分散施加於焊接部WP的壓力、張力等的優點。The plurality of unit
圖13顯示比較例涉及的遮罩100’之形態[圖13的(a)]及將比較例涉及的遮罩100’附著於托盤50’上之狀態的平面圖[圖13的(b)]及側截面圖[圖13的(c)]。圖14是示出將比較例涉及的遮罩100黏合於框架200的單元區域CR的狀態的側截面圖[圖14的(a)]及E的放大平面圖[圖14的(b)]。FIG. 13 is a plan view showing the state of the
參照圖13的(a),與圖8中如上所述的本發明的一實施例的遮罩100相比,比較例的遮罩100’的形狀是,遮罩單元C上包括多個遮罩圖案P,且虛擬部DM上不存在額外的圖案。進而參照圖13的(b)及(c),可將遮罩100’附著於托盤50’(tray)上。而且,可以從母板剝離電鍍的遮罩100,並將其附著於於托盤50’上。Referring to FIG. 13( a ), compared with the
參照圖14的(a),可以將遮罩100的邊緣的一部分或者全部黏合於框架200[第一柵格片材部223或者第二柵格片材部225]。黏合可以焊接方式進行,較佳以鐳射焊接方式進行。鐳射焊接需要在以最大限度靠近框架200的角部側進行,這樣才能夠最大限度減少遮罩100與框架200之間的翹起空間,藉以提升黏合性。Referring to (a) of FIG. 14, part or all of the edge of the
在遮罩100’的上部,向焊接部WP照射 鐳射L,鐳射L可熔化焊接部WP區域的遮罩100’的一部分。遮罩100’的一部分被熔化,藉以可形成焊接焊珠WB(bead)。而且,焊接焊珠WB可以是將遮罩100’與框架200連接成一體的媒介。On the upper part of the mask 100', the welding portion WP is irradiated with laser L, and the laser L can melt a part of the mask 100' in the area of the welding portion WP. A part of the mask 100' is melted, whereby a welding bead WB (bead) can be formed. Also, the welding bead WB may be a medium that connects the mask 100' and the
此時,形成焊接焊珠WB的部分的遮罩100’被熔化後凝固的過程中,會施加有使焊接焊珠WB周邊收縮的張力T。由於如此般之收縮的張力T,焊接焊珠WB的周邊會發生皺紋、扭曲、毛邊等變形105’。而且,焊接焊珠WB與遮罩單元C之間的空間上會發生皺紋、扭曲等變形106’。最終,由於張力T發生變形105’、106’,且由於如此般之變形105’、106’,會發生遮罩圖案P及單元C之間的對準狀態被破壞的問題。At this time, in the process of melting and solidifying the mask 100' where the welding bead WB is formed, a tension T that shrinks the periphery of the welding bead WB is applied. Due to such a contracted tension T, wrinkles, twists, burrs and other deformations 105' occur around the welding bead WB. In addition, deformation 106' may occur in the space between the welding bead WB and the mask unit C, such as wrinkles and twists. Eventually, deformation 105', 106' occurs due to the tension T, and due to such deformation 105', 106', a problem occurs that the alignment state between the mask pattern P and the cell C is broken.
本發明的遮罩100可通過形成防皺圖案150~170及緩衝圖案190來避免發生上述問題。The
圖15是示出本發明的一實施例涉及之將遮罩100黏合於框架200的單元區域CR的狀態的概略圖。15 is a schematic diagram showing a state where the
參照圖15的(a),可以在遮罩100的上部向遮罩100的虛擬部DM[或者邊緣區域]的焊接部WP照射鐳射L。由於遮罩100的一部分被熔化,因此會形成焊接焊珠WB(bead)。而且,焊接焊珠WB可以是將遮罩100與框架200[或者邊緣片材部221、第一柵格片材部223及第二柵格片材部225]連接成一體的媒介。Referring to FIG. 15( a ), the welding portion WP of the dummy portion DM [or the edge area] of the
此時,形成焊接焊珠WB的部分的遮罩100被熔化後凝固的過程中,會施加有使焊接焊珠WB周邊收縮的張力T。施加於焊接焊珠WB周邊的收縮的張力T可分別分散到防皺圖案150~170。由於張力T將分散到多個防皺圖案150~170上,因此會使焊接焊珠WB周邊的皺紋、扭曲、毛邊等變形105’消失。At this time, during the process of melting and solidifying the
而且,施加於焊接焊珠WB與遮罩單元C之間的空間上的收縮的張力T會分別分散到緩衝圖案190上。而且,由於張力T將分散到多個緩衝圖案190上,因此焊接焊珠WB與遮罩單元C之間的空間上的皺紋、扭曲等變形106'會消失。Moreover, the contraction tension T applied to the space between the welding bead WB and the mask unit C is dispersed on the
如此,變形105’、106’因此存在多個防皺圖案150~170及緩衝圖案190而被消除,或僅在幾乎不影響遮罩圖案P的對準的水準上進行,故將遮罩100黏合於框架200的過程中能夠保持遮罩圖案P及單元C間的對準狀態。In this way, the deformations 105', 106' are eliminated due to the existence of a plurality of anti-crease patterns 150-170 and
圖16示出比較例涉及之將托盤50’裝載於框架200上使遮罩100’對應於框架200的單元區域CR的狀態的平面圖[圖16的(a)]及側截面圖[圖16的(b)]。圖17是示出比較例涉及之將托盤50’裝載於框架200上使遮罩100’黏合於框架200的單元區域CR的過程及遮罩100與托盤50’的界面狀態的側截面圖及部分放大側截面圖。FIG. 16 shows a plan view [FIG. 16(a)] and a side cross-sectional view [FIG. 16] showing a state in which the
參照圖16的(a)及(b),可以將遮罩100’對應於框架200中一個遮罩單元區域CR。顛倒上面附著有遮罩100’之托盤50’,藉由將托盤50’裝載於框架200[或者遮罩單元片材部220]上,使遮罩100’對應於遮罩單元區域CR。若托盤50’被裝載於框架200[或者遮罩單元片材部220]上,則遮罩100’將佈置於托盤50’與框架200[或者遮罩單元片材部220]之間,同時會被托盤50’擠壓。Referring to (a) and (b) of FIG. 16, the mask 100' may correspond to one mask unit region CR in the
參照圖17,向遮罩100’照射鐳射L,以使遮罩100’藉由鐳射焊接黏合於框架200上。在被鐳射焊接的遮罩的焊接部WP上生成焊接焊珠WB,焊接焊珠WB可具有與遮罩100/框架200相同的材料且與遮罩100/框架200連接成一體。Referring to FIG. 17, the mask 100' is irradiated with laser L so that the mask 100' is bonded to the
此外,除了藉由托盤50’擠壓遮罩100’以外,還可以從托盤50’的上部向擠壓體M進行擠壓,以使遮罩100與框架200[或者邊緣片材部221、第一柵格片材部223及第二柵格片材部225]更緊密地抵接。而且,除了擠壓體M重量導致的荷重之外,還可以具備按壓擠壓體M的手段。擠壓體M上可以形成有使鐳射L透過的透過孔MH,鐳射L穿過透過孔MH之後再通過托盤50’,以照射到遮罩100的焊接部(進行焊接的區域)。In addition to pressing the mask 100' by the tray 50', the pressing body M may be pressed from the upper part of the tray 50' to make the
然而,儘管存在如上所述之托盤50’及擠壓體M的荷重,托盤50’與遮罩100的界面上仍可能存在細微的空隙AG(air gap)。由於玻璃材料的托盤50’的表面粗糙度Ra是約20~30㎛,故在微米級觀察托盤50’的表面時,難免存在細微的彎曲。藉此,即使擠壓遮罩100’仍會存在托盤50’與遮罩100’沒有緊密抵接的部分,由於擠壓荷重沒有很好地傳遞到該部分,故遮罩100’與框架200[或者邊緣片材部221、第一柵格片材部223及第二柵格片材部225]亦不會緊密地抵接。However, despite the load of the tray 50' and the extruded body M as described above, there may be a slight air gap AG at the interface between the tray 50' and the
在托盤50’與遮罩100’之間沒有空隙AG而緊密地抵接的部分,遮罩100’與框架200之間藉由鐳射L1照射容易生成焊接焊珠WB,其將遮罩100’與框架200連接成一體,結果可順利地完成焊接作業。然而,在托盤50’與遮罩100之間存在空隙AG導致不能夠緊密地抵接的部分,遮罩100與框架200之間不能基於鐳射L1照射容易生成焊接焊珠WB,結果顯示出無法順利地完成焊接作業的問題。Between the tray 50' and the mask 100', there is no gap AG and the portion closely abuts, and the welding bead WB is easily generated between the mask 100' and the
因此,本發明的特徵在於,提供與遮罩100間不存在空隙AG且能夠緊密地抵接的托盤50。Therefore, a feature of the present invention is to provide a
圖18是示出本發明一實施例涉及之將托盤50裝載於框架200上使遮罩100黏合於框架200的單元區域CR的過程及遮罩100與托盤50的界面狀態的側截面圖及部分放大側截面圖。圖19是示出本發明一實施例涉及之托盤50的平面圖[圖19的(a)]及後視圖[圖19的(b)]。圖20是示出本發明一實施例涉及之將托盤50裝載於框架200上使遮罩100對應於框架200的單元區域CR的狀態的概略圖。18 is a side cross-sectional view and part showing the process of loading the
參照圖18及圖19,遮罩100可附著於托盤50(tray)上。從母板剝離電鍍的遮罩100,並可以將其附著於托盤50上。托盤50優選爲平板形狀,以使遮罩100平坦地附著於托盤50上。而且,托盤50可以是尺寸大於遮罩100之平板形狀,以使遮罩100整體上平坦地附著於托盤50上。18 and 19, the
爲了使遮罩100附著於托盤50的一面時不産生褶皺、皺紋而平坦地展開,可利用靜電力、磁力、真空等。利用靜電的方法是將帶電體與托盤50的一面摩檫以誘導靜電的方法。而且,利用靜電力的方法是向托盤50的上面或下面佈置的透明電極(transparent electrode)施加電壓,若遮罩100上亦施加電壓,則靜電被誘導,以使遮罩100平坦地展開的同時,使其具有規定的附著力,藉以將遮罩100附著於托盤50的一面之方法。利用磁力的方法是在佈置有遮罩100的托盤50的面之相反面上利用多個磁鐵以用磁力帶動遮罩100移動的同時使遮罩100展開的方法。利用真空的方法是從托盤50上佈置的遮罩100的一端到另一端使用真空裝置帶動遮罩100移動的同時使遮罩100展開的方法。In order to spread the
特別是,爲了使本發明的托盤50與遮罩100間的界面之間不産生空隙AG,與遮罩100接觸的一面是拋光面。具體來說, 托盤50一面的表面粗糙度Ra可以是100nm以下。上述圖17中提及的普通玻璃材料的托盤50’的表面粗糙度Ra是約20~30㎛,因此空隙AG的存在對㎛級別的遮罩圖案P的對準誤差產生影響。然而,本發明的托盤50由於其表面粗糙度Ra是nm級,因此不存在空隙AG或空隙AG幾乎不存在,故對遮罩圖案P的對準誤差不產生影響。In particular, in order to prevent a gap AG from occurring at the interface between the
爲了實現表面粗糙度Ra為100nm以下的托盤50,托盤50可以使用晶圓(wafer)。晶圓(wafer)的表面粗糙度Ra是約10nm,且市面上的產品較多,表面處理工藝已被習知,故較適合用作托盤50。除此之外,若對表面進行細微拋光加工,其表面粗糙度Ra可滿足100nm以下,則托盤50亦可以使用玻璃(glass)、氧化矽(silica)、耐熱玻璃、石英(quartz)、氧化鋁(Al2
O3
)等材料。以下,假設將晶圓作爲托盤50來使用的情況進行說明。In order to realize the
參照圖18的放大部分,可以確認表面粗糙度Ra為50nm以下的托盤50與遮罩100的界面之間不存在空隙AG而緊密地接觸。在遮罩100的焊接部WP照射鐳射L以進行鐳射焊接作業。Referring to the enlarged part of FIG. 18, it can be confirmed that there is no gap AG between the
另一方面,晶圓材料的托盤50有可能對鐳射L光不透明。藉此,本發明的托盤50的特徵在於,其上形成有雷射貫穿孔51,藉以能夠使從托盤50的上部照射的鐳射L到達遮罩100的焊接部WP。On the other hand, the
參照圖19的(a)、(b),雷射貫穿孔51可與焊接部WP的位置及個數對應地形成於托盤50上。焊接部WP可以規定的間隔在遮罩100的邊緣或虛擬部DM的部分上佈置多個,因此雷射貫穿孔51亦可以與其對應且相隔規定間隔地形成多個。作為一例,焊接部WP在遮罩100的兩側(左側/右側)虛擬部DM的部分以規定間隔佈置多個,因此雷射貫穿孔51亦可以在托盤50的兩側(左側/右側)以規定間隔形成多個。Referring to (a) and (b) of FIG. 19, the laser through
雷射貫穿孔51並非一定與焊接部的位置及個數對應。例如,亦可以僅對雷射貫穿孔51中的一部分照射鐳射L以進行焊接。而且,不與焊接部對應的雷射貫穿孔51中一部分在對準遮罩100與托盤50時亦可代替對準標記(ALIGN MARK)而使用。若托盤50的材料對鐳射L光透明,則亦可以不形成雷射貫穿孔51。The laser through
托盤50上還可以設置擠壓體M以進行擠壓,藉以使遮罩100與框架200[或者邊緣片材部221、第一柵格片材部223及第二柵格片材部225]更緊密地抵接。除了擠壓體M的重量導致的荷重之外,還可以具備按壓擠壓體M的手段。擠壓體M上可以形成有使鐳射L透過的透過孔MH,透過孔MH的形成區域可以與托盤50的雷射貫穿孔51的形成區域重疊。鐳射L透過透過孔MH之後,再穿過托盤50以照射到遮罩100的焊接部WP。應當最大限度地接近框架200的角部側進行焊接W,才能最大限度地減少遮罩100和框架200之間的翹起空間,並提升黏合性。The
托盤50與遮罩100之間可以不存在空隙AG而緊密地抵接,由於上部擠壓體M和托盤50自身荷重引起的擠壓,托盤50與遮罩100,遮罩100與框架200[或邊緣片材部221、第一柵格片材部223及第二柵格片材部225]能夠更緊密地抵接。藉此,藉由鐳射L的照射遮罩100與框架200之間能夠很好地生成焊接焊珠WB。焊接焊珠WB可視為遮罩100被熔化的部分,具有點(spot)或者線(line)形狀,作為媒介將遮罩100與框架200連接成一體,最終使焊接順利地進行。The
然後,參照圖20的(a)及(b),可以將遮罩100對應於框架200的一個遮罩單元區域CR。顛倒上面附著有遮罩100的托盤50,藉由將托盤50裝載於框架200[或者遮罩單元片材部220]上,可以使遮罩100對應於遮罩單元區域CR。而且,邊控制托盤50的位置,邊利用顯微鏡觀察遮罩100是否與遮罩單元區域CR對應。若托盤50被裝載於框架200[或者遮罩單元片材部220]上,則將遮罩100佈置到托盤50與框架200[或者遮罩單元片材部220]之間的同時,用托盤50擠壓遮罩100。Then, referring to (a) and (b) of FIG. 20, the
另一方面,亦可以在框架200下部佈置下部支撐體70。下部支撐體70具有可進入框架邊緣部210的中空區域R內部的尺寸且具有平坦的形狀。而且,下部支撐體70的上面亦可形成有與遮罩單元片材部220的形狀對應的規定支撐槽(未圖示)。此時,邊緣片材部221、第一柵格片材部223及第二柵格片材部225插入支撐槽內,藉以使遮罩單元片材部220更好地固定。On the other hand, the
下部支撐體70可擠壓與遮罩100接觸的遮罩單元區域CR的相反面。即,下部支撐體70沿上部方向支撐遮罩單元片材部220,藉以防止遮罩100的黏合過程中遮罩單元片材部220向下部下垂。同時,下部支撐體70與托盤50以相互相反的方向擠壓遮罩100的邊緣部分及框架200[或者遮罩單元片材部220],故可以不破壞遮罩100的對準狀態並使其保持對準。The
本發明的特徵在於,僅藉由托盤50上附著遮罩100且將托盤50裝載於框架200上就可以完成使遮罩100與框架200的遮罩單元區域CR對應的過程,此過程對遮罩100不施加任何拉伸力。The feature of the present invention is that the process of matching the
由於框架200的遮罩單元片材部220具有薄的厚度,在對遮罩100施加拉伸力的狀態下,黏合於遮罩單元片材部220時,遮罩100中殘存的拉伸力作用於遮罩單元片材部220以及遮罩單元區域CR,也有可能使它們變形。因此,應該在對遮罩100不施加拉伸力的狀態下,將遮罩100黏合於遮罩單元片材部220。由此,可以防止因施加到遮罩100的拉伸力作為張力(tension)反向作用於框架200而導致框架200(或者遮罩單元片材部220)變形。Since the mask
只是,在對遮罩100不施加拉伸力的狀態下,將其黏合於框架200(或者遮罩單元片材部220),以製造框架一體型遮罩,並將這個框架一體型遮罩應用於像素沉積工藝時,有可能發生一種問題。在約25~45℃下進行的像素沉積工藝中,遮罩100以規定長度熱膨脹。即使是恆範鋼材料的遮罩100,隨著提升用於形成像素沉積工藝環境的溫度10℃左右,也會發生約1~3ppm的長度變化。例如,當遮罩100的總長度為500mm時,可以增加約5~15μm的長度。如此,遮罩100因自重而下垂或者在固定於框架200的狀態下拉伸而引起扭曲等變形,同時圖案P的對準誤差變大。However, the
因此,本發明的特徵在於,在不是常溫,而是比常溫更高的溫度下,在對遮罩100不施加拉伸力的狀態下,使其與框架200的遮罩單元區域CR對應並黏合。本說明書中表達爲將工藝區域的溫度提升至第一溫度ET後,使遮罩與框架對應並黏合。Therefore, the present invention is characterized in that the
“工藝區域”是指佈置有遮罩100、框架200等構成要素並且進行遮罩100的黏合工藝等的空間。工藝區域可以是密閉的腔室內的空間,也可以是開放的空間。另外,”第一溫度”可以是指將框架一體型遮罩使用於OLED像素沉積工藝時,高於或者等於像素沉積工藝的溫度。考慮到像素沉積工藝溫度約爲25~45℃,第一溫度可以是約25℃至60℃。工藝區域的溫度上升可以通過在腔室內設置加熱裝置,或者工藝區域周圍設置加熱裝置的方法等進行。The “process area” refers to a space in which components such as the
再次參照圖13,使遮罩100與遮罩單元區域CR對應後,可以將包括框架200的工藝區域的溫度提升至第一溫度ET。或者,也可以將包括框架200的工藝區域的溫度提升至第一溫度後,使遮罩100與遮罩單元區域CR對應。圖式中示出僅使一個遮罩100與一個遮罩單元區域CR對應,也可以使多個遮罩100與每個遮罩單元區域CR對應後,將工藝區域的溫度提升至第一溫度ET。Referring again to FIG. 13, after the
現有的圖1的遮罩10包括6個單元C1~C6,因此具有較長的長度,而本發明的遮罩100包括一個單元C,因此具有較短的長度,因此PPA(pixel position accuracy)扭曲的程度能夠變小。假設包括多個單元C1~C6、...的遮罩10的長度為1m,並且在1m的總長度中發生10μm的PPA誤差,則本發明的遮罩100可以隨著相對長度減小(相當於單元C數量減少)而將上述誤差範圍變成1/n。例如,本發明的遮罩100長度為100mm,則具有從現有的遮罩10的1m減小為1/10的長度,因此在100mm的總長度中發生1μm的PPA誤差,顯著降低對準誤差。The existing
另一方面,遮罩100具備多個單元C,並且即使使各個單元C與框架200的各個單元區域CR對應也處於對準誤差最小化的範圍內,則遮罩100也可以與框架200的多個遮罩單元區域CR對應。或者,具有多個單元C的遮罩100也可以與一個遮罩單元區域CR對應。在這種情況下,也考慮到基於對準的工藝時間和生産性,遮罩100優選具備盡可能少量的單元C。On the other hand, the
在本發明中,由於只需匹配遮罩100的一個單元C並確認對準狀態即可,因此與同時匹配多個單元C(C1~C6)並需要確認全部對準狀態的現有方法相比,可以顯著縮短製造時間。In the present invention, since it is only necessary to match one unit C of the
即,本發明的框架一體型遮罩的製造方法與現有方法相比,能夠明顯縮短時間,該現有方法通過使包含於6個遮罩100的各個單元C11~C16分別與一個單元區域CR11~CR16對應並確認各個對準狀態的6次過程,同時匹配6個單元C1~C6,並且需要同時確認6個單元C1~C6的對準狀態。That is, the manufacturing method of the frame-integrated mask of the present invention can significantly shorten the time compared with the conventional method. In the conventional method, the cells C11 to C16 included in the six
另外,在本發明的框架一體型遮罩的製造方法中,使30個遮罩100分別與30個單元區域CR(CR11~CR56)對應並對準的30次的過程中的產品產率,可以明顯高於使分別包括6個單元C1~C6的5個遮罩10(參照圖2的(a))與框架20對應並對準的5次過程中的現有產品的產率。由於在每次對應於6個單元C的區域中對準6個單元C1~C6的現有方法是明顯繁瑣且困難的作業,産品產率低。In addition, in the manufacturing method of the frame-integrated mask of the present invention, the product yield in the process of aligning 30
另一方面,使遮罩100與框架200對應後,也可以在框架200上用規定的黏合劑臨時固定遮罩100。然後,可以進行遮罩100的黏合步驟。On the other hand, after matching the
圖21是示出本發明一實施例涉及之將遮罩100依序黏合到單元區域CR(CR11~CR56)的過程之平面圖[圖21的(a)]及側截面圖[圖21的(b)]。21 is a plan view [FIG. 21(a)] and a side cross-sectional view [FIG. 21(b) showing a process of sequentially bonding the
參照圖21,可以使遮罩100對應地黏合於遮罩單元區域CR11後,再使遮罩100對應地黏合於與遮罩單元區域CR11相鄰的遮罩單元區域CR12。圖21雖圖示僅黏合兩個遮罩100,但可以在所有遮罩單元區域CR上對應地黏合遮罩10。Referring to FIG. 21, after the
示出2個相鄰的遮罩100的一個邊緣分別黏合(形成焊接焊珠WB)於第一柵格片材部223(或第二柵格片材部225)之上表面的形態。第一柵格片材部223(或第二柵格片材部225)的寬度、厚度約為1~5mm左右,爲了提升產品之生產性,有必要將第一柵格片材部223(或第二柵格片材部225)與遮罩100之邊緣重疊的寬度最大限度縮減到約0.1~2.5mm左右。It is shown that one edge of two
在對遮罩100不施加拉伸力的狀態下,將其焊接LW在遮罩單元片材部220上,因此沒有對遮罩單元片材部220(或者邊緣片材部221)、第一柵格片材部223、第二柵格片材部225施加張力。In a state where no tensile force is applied to the
將一個遮罩100黏合於框架200之後,可以重複使剩餘遮罩100依序與剩餘遮罩單元C對應並且黏合於框架200的過程。由於已經黏合於框架200的遮罩100可以提供基準位置,能夠顯著縮短使剩餘遮罩100依序與單元區域CR對應並且確認對準狀態的過程中的時間。並且,黏合於一個遮罩單元區域的遮罩100和黏合於相鄰的遮罩單元區域的遮罩100之間的PPA(pixel position accuracy)不超過3μm,能夠提供對準精確的超高清OLED像素形成用遮罩。After one
圖22是示出本發明一實施例涉及之將遮罩100黏合於框架200的單元區域CR後,降低工藝區域的溫度LT的過程的概略圖。22 is a schematic diagram showing a process of lowering the temperature LT of the process area after bonding the
然後參照圖22,可以將工藝區域的溫度降至第二溫度LT。“第二溫度”是指比第一溫度更低的溫度。考慮到第一溫度爲約25℃至60℃,以低於第一溫度為前提,第二溫度可以為約20℃至30℃,優選地,第二溫度可以為常溫。工藝區域的溫度降低可以藉由在腔室中設置冷卻裝置、在工藝區域周邊設置冷卻裝置方法、常溫自然冷卻的方法等進行。Then referring to FIG. 22, the temperature of the process area may be reduced to the second temperature LT. "Second temperature" refers to a temperature lower than the first temperature. Considering that the first temperature is about 25°C to 60°C, and on the premise of being lower than the first temperature, the second temperature may be about 20°C to 30°C, preferably, the second temperature may be normal temperature. The temperature of the process area can be reduced by installing a cooling device in the chamber, a cooling device around the process area, or a natural cooling method at room temperature.
當將工藝區域的溫度降低至第二溫度LT時,遮罩100可以以規定長度進行熱收縮。遮罩100可以沿著所有側面方向等方性(Isotrope)熱收縮。但是,由於遮罩100以焊接方式固定連接到框架200[或者遮罩單元片材部220],因此遮罩100的熱收縮自發地對周圍的遮罩單元片材部220施加張力TS。由於遮罩100自發地施加張力,遮罩100可以更加緊密地黏合於框架200上。When the temperature of the process area is reduced to the second temperature LT, the
另外,各個遮罩100全部黏合於對應的遮罩單元區域CR後,工藝區域的溫度降低至第二溫度LT,因此同時引起所有遮罩100的熱收縮,從而可以防止框架200發生變形或者圖案P的對準誤差變大的問題。更具體而言,即使張力TS施加於遮罩單元片材部220,多個遮罩100沿著相反方向施加張力TS,因此抵消該力量,在遮罩單元片材部220不發生變形。例如,在附著於CR11單元區域的遮罩100與附著於CR12單元區域的遮罩100之間的第一柵格片材部223中,向附著於CR11單元區域的遮罩100的右側方向作用的張力TS與向附著於CR12單元區域的遮罩100的左側方向作用的張力TS相互抵消。由此,最大限度地降低基於張力TS的框架200[或者遮罩單元片材部220]的變形,從而能夠最大限度地降低遮罩100[或者遮罩圖案P]的對準誤差。In addition, after all the
圖23是示出本發明之一實施例涉及之利用框架一體型遮罩100、200的OLED像素沉積裝置1000的概略圖。23 is a schematic diagram showing an OLED
參照圖23,OLED像素沉積裝置1000包括:磁板300,容納有磁體310,並且排布有冷卻水管350;沉積源供給部500,從磁板300的下部供給有機物原料600。Referring to FIG. 23, the OLED
磁板300與沉積源沉積部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型遮罩100、200[或者FMM]。磁體310可以產生磁場,並藉由磁場緊貼到目標基板900上。A
沉積源供給部500可以往返左右路徑並供給有機物源600,由沉積源供給部500供給的有機物源600可以藉由形成於框架一體型遮罩100、200的圖案P黏合於目標基板900的一側。通過框架一體型遮罩100、200的圖案P後沉積的有機物源600,可以用作OLED的像素700。The deposition
爲了防止由於陰影效應(Shadow Effect)發生的像素700的不均勻沉積,框架一體型遮罩100、200的圖案可以傾斜地形成S[或者以錐形S形成]。沿著傾斜表面,在對角綫方向上通過圖案的有機物源600,也可以有助於像素700的形成,因此,能夠整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the
在高於像素沉積工藝溫度的第一溫度下,遮罩100黏合固定於框架200,因此即使提升至用於沉積像素工藝的溫度,也對遮罩圖案P的位置幾乎不構成影響,遮罩100和相鄰的遮罩100之間的PPA能夠保持為不超過3μm。At a first temperature that is higher than the temperature of the pixel deposition process, the
如上所述,本發明列舉了優選實施例進行圖示和說明,但是不限於上述實施例,在不脫離本發明的精神的範圍內,該技術領域中具有通常知識者能夠進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As described above, the present invention lists preferred embodiments for illustration and description, but it is not limited to the above-mentioned embodiments, and various modifications and changes can be made by those having ordinary knowledge in the technical field without departing from the spirit of the present invention. Such modifications and changes fall within the scope of the present invention and the attached patent application.
10:條式遮罩
11:遮罩膜
20:框架
50,50’:托盤(tray)
51:雷射貫穿孔
70:下部支撐體
100:遮罩
110:遮罩膜
150,160,160’,170:防皺圖案
151,161,161’,171:單位防皺圖案
190:緩衝圖案
191,192:單位緩衝圖案
200:框架
210:邊緣框架部
220:遮罩單元片材部
221:邊緣片材部
223:第一柵格片材部
225:第二柵格片材部
300:磁板
310:磁體
350:冷卻水管
500:沉積源供給部
600:有機物原料
700:像素
900:目標基板
1000:OLED像素沉積裝置
C:單元,遮罩單元
C1~C3:遮罩單元
CR:遮罩單元區域
D1~D1”、D2~D2”:距離
DM:虛擬部,遮罩虛擬部
ET:將工藝區域的溫度升至第一溫度
F1~F2:拉伸力
L:鐳射
LT:將工藝區域的溫度降至第二溫度
M:上部擠壓體
P:遮罩圖案
R:邊緣框架部的中空區域
TS:張力
W:焊接
WB:焊接焊珠
WP:焊接部
WPC:焊接部中心點10: Strip mask
11: Mask film
20:
圖1是示出現有的OLED像素沉積用遮罩的概略圖。 圖2是示出將現有的遮罩黏合於框架的過程的概略圖。 圖3是示出在現有的拉伸遮罩的過程中,發生單元之間的對準誤差的概略圖。 圖4是示出本發明之一實施例涉及之框架一體型遮罩的平面圖及側截面圖。 圖5是示出本發明之一實施例涉及之框架的平面圖以及側截面圖。 圖6是示出本發明之一實施例涉及之框架製造過程的概略圖。 圖7是示出本發明之其他實施例涉及之框架製造過程的概略圖。 圖8是示出本發明之一實施例涉及之遮罩的形狀及將遮罩附著於托盤上的狀態的概略圖。 圖9至圖12是示出本發明之多個實施例涉及之遮罩防皺圖案的概略圖。 圖13是示出比較例之將遮罩盤上黏合之狀態的概略圖。 圖14是示出比較例涉及之將遮罩黏合於框架的單元區域的狀態的概略圖。 圖15是示出本發明之一實施例涉及之將遮罩黏合於框架的單元區域的狀態的概略圖。 圖16是示出比較例涉及之將托盤裝載於框架上使遮罩對應於框架的單元區域的狀態的概略圖。 圖17是示出比較例涉及之將托盤裝載於框架上使遮罩黏合於框架的單元區域的過程及遮罩與托盤的界面狀態的概略圖。 圖18是示出本發明之一實施例涉及之將托盤裝載於框架上使遮罩黏合於框架的單元區域的過程及遮罩與托盤的界面狀態的概略圖。 圖19是示出本發明之一實施例涉及之托盤的概略圖。 圖20是示出本發明之一實施例涉及之將托盤裝載於框架上使遮罩對應於框架的單元區域的狀態的概略圖。 圖21是示出本發明之一實施例涉及之將遮罩依序黏合於單元區域的過程的概略圖。 圖22是示出本發明之一實施例涉及之將遮罩黏合於框架的單元區域之後,降低工藝區域的溫度的過程的概略圖。 圖23是示出本發明之一實施例涉及之利用框架一體型遮罩之OLED像素沉積裝置的概略圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition. FIG. 2 is a schematic diagram showing a process of bonding a conventional mask to a frame. FIG. 3 is a schematic diagram showing that an alignment error between cells occurs during a conventional stretching mask. 4 is a plan view and a side cross-sectional view showing a frame-integrated mask according to an embodiment of the present invention. 5 is a plan view and a side sectional view showing a frame according to an embodiment of the present invention. 6 is a schematic diagram showing a frame manufacturing process according to an embodiment of the present invention. 7 is a schematic diagram showing a frame manufacturing process according to another embodiment of the present invention. FIG. 8 is a schematic diagram showing the shape of the mask and the state where the mask is attached to the tray according to an embodiment of the present invention. 9 to 12 are schematic diagrams showing mask anti-crease patterns according to various embodiments of the present invention. FIG. 13 is a schematic view showing a state of bonding the mask disk in a comparative example. 14 is a schematic diagram showing a state in which a mask is adhered to a unit area of a frame according to a comparative example. 15 is a schematic diagram showing a state in which a mask is adhered to a unit area of a frame according to an embodiment of the present invention. 16 is a schematic view showing a state in which a tray is loaded on a frame so that a mask corresponds to a unit area of the frame according to a comparative example. 17 is a schematic diagram showing a process of loading a tray on a frame and adhering a mask to a unit area of the frame according to a comparative example, and an interface state between the mask and the tray. 18 is a schematic diagram showing a process of loading a tray on a frame and adhering a mask to a unit area of the frame and an interface state between the mask and the tray according to an embodiment of the present invention. 19 is a schematic diagram showing a tray according to an embodiment of the present invention. 20 is a schematic diagram showing a state in which a tray is loaded on a frame so that a mask corresponds to a unit area of the frame according to an embodiment of the present invention. 21 is a schematic diagram showing a process of sequentially bonding a mask to a cell area according to an embodiment of the present invention. 22 is a schematic diagram showing a process of lowering the temperature of the process area after bonding the mask to the unit area of the frame according to an embodiment of the present invention. 23 is a schematic diagram showing an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention.
50’:托盤 50’: tray
100:遮罩 100: mask
110:遮罩膜 110: mask film
150,160,170:防皺圖案 150, 160, 170: anti-crease pattern
C:單元/遮罩單元 C: unit/mask unit
P:圖案/遮罩圖案 P: pattern/mask pattern
WP:焊接部 WP: Welding Department
DM:遮罩虛擬部 DM: mask virtual part
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180079992A KR102254374B1 (en) | 2018-07-10 | 2018-07-10 | Producing method of mask integrated frame and mask for forming oled picture element |
KR10-2018-0079992 | 2018-07-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202013064A true TW202013064A (en) | 2020-04-01 |
Family
ID=69142912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108123116A TW202013064A (en) | 2018-07-10 | 2019-07-01 | Producing method of mask integrated frame and mask for forming oled picture element |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102254374B1 (en) |
TW (1) | TW202013064A (en) |
WO (1) | WO2020013502A1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3461222B2 (en) * | 1995-04-25 | 2003-10-27 | 株式会社東芝 | Color picture tube |
JP2002025458A (en) * | 2000-07-10 | 2002-01-25 | Toshiba Corp | Color picture tube |
KR101820020B1 (en) * | 2011-04-25 | 2018-01-19 | 삼성디스플레이 주식회사 | Mask frame assembly for thin film deposition |
KR101837624B1 (en) * | 2011-05-06 | 2018-03-13 | 삼성디스플레이 주식회사 | Mask frame assembly for thin film deposition and the manufacturing method thereof |
KR102002494B1 (en) * | 2012-11-30 | 2019-07-23 | 삼성디스플레이 주식회사 | Mask frame assembly for thin film deposition |
KR102609073B1 (en) * | 2016-11-30 | 2023-12-05 | 엘지디스플레이 주식회사 | Mask for deposition, manufacturing method of the same |
-
2018
- 2018-07-10 KR KR1020180079992A patent/KR102254374B1/en active IP Right Grant
-
2019
- 2019-07-01 TW TW108123116A patent/TW202013064A/en unknown
- 2019-07-02 WO PCT/KR2019/007991 patent/WO2020013502A1/en active Application Filing
Also Published As
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KR20200006348A (en) | 2020-01-20 |
KR102254374B1 (en) | 2021-05-24 |
WO2020013502A1 (en) | 2020-01-16 |
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