TW202008446A - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

Info

Publication number
TW202008446A
TW202008446A TW108126319A TW108126319A TW202008446A TW 202008446 A TW202008446 A TW 202008446A TW 108126319 A TW108126319 A TW 108126319A TW 108126319 A TW108126319 A TW 108126319A TW 202008446 A TW202008446 A TW 202008446A
Authority
TW
Taiwan
Prior art keywords
wafer
polarizing film
laser beam
laser processing
laser
Prior art date
Application number
TW108126319A
Other languages
English (en)
Chinese (zh)
Inventor
田中圭
陳之文
深谷幸太
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202008446A publication Critical patent/TW202008446A/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Dicing (AREA)
TW108126319A 2018-08-02 2019-07-25 晶圓的加工方法 TW202008446A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018145942A JP7139050B2 (ja) 2018-08-02 2018-08-02 ウェーハの加工方法
JP2018-145942 2018-08-02

Publications (1)

Publication Number Publication Date
TW202008446A true TW202008446A (zh) 2020-02-16

Family

ID=69426930

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108126319A TW202008446A (zh) 2018-08-02 2019-07-25 晶圓的加工方法

Country Status (3)

Country Link
JP (1) JP7139050B2 (ko)
CN (1) CN110788499B (ko)
TW (1) TW202008446A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113644035B (zh) * 2021-08-06 2024-10-11 广东工业大学 一种半导体晶圆及其激光加工方法、系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116844A (ja) * 2003-10-09 2005-04-28 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4402708B2 (ja) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
JP5528904B2 (ja) * 2010-05-20 2014-06-25 株式会社ディスコ サファイアウェーハの分割方法
JP2012238746A (ja) * 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd 光デバイスウエーハの分割方法
JP2013207170A (ja) * 2012-03-29 2013-10-07 Disco Abrasive Syst Ltd デバイスウェーハの分割方法
JP5360278B2 (ja) * 2012-09-27 2013-12-04 三星ダイヤモンド工業株式会社 レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP6119551B2 (ja) * 2013-10-16 2017-04-26 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP6270520B2 (ja) * 2014-02-07 2018-01-31 株式会社ディスコ ウェーハの加工方法
JP5906265B2 (ja) * 2014-03-03 2016-04-20 株式会社ディスコ ウエーハの分割方法
JP2016072274A (ja) * 2014-09-26 2016-05-09 株式会社ディスコ ウエーハの加工方法
CN107710311A (zh) * 2015-07-03 2018-02-16 堺显示器制品株式会社 显示构件的截断方法以及液晶显示装置的制造方法

Also Published As

Publication number Publication date
CN110788499B (zh) 2023-04-07
KR20200015420A (ko) 2020-02-12
CN110788499A (zh) 2020-02-14
JP7139050B2 (ja) 2022-09-20
JP2020021874A (ja) 2020-02-06

Similar Documents

Publication Publication Date Title
JP4959422B2 (ja) ウエーハの分割方法
JP6587911B2 (ja) ウエーハの分割方法
JP5443104B2 (ja) ウエーハの加工方法
JP2007173475A (ja) ウエーハの分割方法
JP4977432B2 (ja) ヒ化ガリウムウエーハのレーザー加工方法
US7915142B2 (en) Wafer processing method
JP2006108532A (ja) ウエーハの研削方法
KR20150043975A (ko) 웨이퍼의 가공 방법
JP2008277414A (ja) ウエーハの分割方法
TW201001516A (en) Method and apparatus for polishing outer circumferential end section of semiconductor wafer
JP2013207170A (ja) デバイスウェーハの分割方法
US20110059620A1 (en) Protective film forming method and apparatus
KR20140095424A (ko) 웨이퍼 가공 방법
KR20170053114A (ko) 웨이퍼의 가공 방법
KR102084269B1 (ko) 레이저 가공 장치 및 보호막 피복 방법
JPS6239539B2 (ko)
TW202008452A (zh) 晶片製造方法
TW202008446A (zh) 晶圓的加工方法
KR102724202B1 (ko) 웨이퍼의 가공 방법
JP2008227276A (ja) ウエーハの分割方法
JP2013058536A (ja) デバイスウェーハの分割方法
US9455149B2 (en) Plate-like object processing method
JP2014096526A (ja) ウエーハの加工方法
TWI478377B (zh) 具led圖案之基板之加工方法及具led圖案之基板之加工系統
JP7086474B2 (ja) ウェーハの加工方法