JP7139050B2 - ウェーハの加工方法 - Google Patents

ウェーハの加工方法 Download PDF

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Publication number
JP7139050B2
JP7139050B2 JP2018145942A JP2018145942A JP7139050B2 JP 7139050 B2 JP7139050 B2 JP 7139050B2 JP 2018145942 A JP2018145942 A JP 2018145942A JP 2018145942 A JP2018145942 A JP 2018145942A JP 7139050 B2 JP7139050 B2 JP 7139050B2
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JP
Japan
Prior art keywords
wafer
laser
polarizing film
laser beam
forming step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018145942A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020021874A (ja
Inventor
圭 田中
之文 陳
幸太 深谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2018145942A priority Critical patent/JP7139050B2/ja
Priority to CN201910634032.XA priority patent/CN110788499B/zh
Priority to TW108126319A priority patent/TW202008446A/zh
Priority to KR1020190094195A priority patent/KR20200015420A/ko
Publication of JP2020021874A publication Critical patent/JP2020021874A/ja
Application granted granted Critical
Publication of JP7139050B2 publication Critical patent/JP7139050B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Dicing (AREA)
JP2018145942A 2018-08-02 2018-08-02 ウェーハの加工方法 Active JP7139050B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018145942A JP7139050B2 (ja) 2018-08-02 2018-08-02 ウェーハの加工方法
CN201910634032.XA CN110788499B (zh) 2018-08-02 2019-07-15 晶片的加工方法
TW108126319A TW202008446A (zh) 2018-08-02 2019-07-25 晶圓的加工方法
KR1020190094195A KR20200015420A (ko) 2018-08-02 2019-08-02 웨이퍼의 가공 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018145942A JP7139050B2 (ja) 2018-08-02 2018-08-02 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
JP2020021874A JP2020021874A (ja) 2020-02-06
JP7139050B2 true JP7139050B2 (ja) 2022-09-20

Family

ID=69426930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018145942A Active JP7139050B2 (ja) 2018-08-02 2018-08-02 ウェーハの加工方法

Country Status (4)

Country Link
JP (1) JP7139050B2 (ko)
KR (1) KR20200015420A (ko)
CN (1) CN110788499B (ko)
TW (1) TW202008446A (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013027929A (ja) 2012-09-27 2013-02-07 Mitsuboshi Diamond Industrial Co Ltd レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP2013207170A (ja) 2012-03-29 2013-10-07 Disco Abrasive Syst Ltd デバイスウェーハの分割方法
JP2014146810A (ja) 2014-03-03 2014-08-14 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2015079826A (ja) 2013-10-16 2015-04-23 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
WO2017006405A1 (ja) 2015-07-03 2017-01-12 堺ディスプレイプロダクト株式会社 表示部材の分断方法、及び液晶表示装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116844A (ja) * 2003-10-09 2005-04-28 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4402708B2 (ja) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
JP5528904B2 (ja) * 2010-05-20 2014-06-25 株式会社ディスコ サファイアウェーハの分割方法
JP2012238746A (ja) * 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd 光デバイスウエーハの分割方法
JP6270520B2 (ja) * 2014-02-07 2018-01-31 株式会社ディスコ ウェーハの加工方法
JP2016072274A (ja) * 2014-09-26 2016-05-09 株式会社ディスコ ウエーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013207170A (ja) 2012-03-29 2013-10-07 Disco Abrasive Syst Ltd デバイスウェーハの分割方法
JP2013027929A (ja) 2012-09-27 2013-02-07 Mitsuboshi Diamond Industrial Co Ltd レーザー加工装置、被加工物の加工方法および被加工物の分割方法
JP2015079826A (ja) 2013-10-16 2015-04-23 三星ダイヤモンド工業株式会社 弾性支持板、破断装置及び分断方法
JP2014146810A (ja) 2014-03-03 2014-08-14 Disco Abrasive Syst Ltd ウエーハの分割方法
WO2017006405A1 (ja) 2015-07-03 2017-01-12 堺ディスプレイプロダクト株式会社 表示部材の分断方法、及び液晶表示装置の製造方法

Also Published As

Publication number Publication date
TW202008446A (zh) 2020-02-16
KR20200015420A (ko) 2020-02-12
CN110788499B (zh) 2023-04-07
JP2020021874A (ja) 2020-02-06
CN110788499A (zh) 2020-02-14

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