TW202005111A - 半導體發光元件以及半導體發光元件的製造方法 - Google Patents
半導體發光元件以及半導體發光元件的製造方法 Download PDFInfo
- Publication number
- TW202005111A TW202005111A TW108116262A TW108116262A TW202005111A TW 202005111 A TW202005111 A TW 202005111A TW 108116262 A TW108116262 A TW 108116262A TW 108116262 A TW108116262 A TW 108116262A TW 202005111 A TW202005111 A TW 202005111A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- type
- semiconductor light
- atoms
- emitting element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 145
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000002019 doping agent Substances 0.000 claims abstract description 92
- 230000004888 barrier function Effects 0.000 claims abstract description 47
- 238000005253 cladding Methods 0.000 claims description 77
- 229910052738 indium Inorganic materials 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 493
- 229910052751 metal Inorganic materials 0.000 description 86
- 239000002184 metal Substances 0.000 description 86
- 239000000758 substrate Substances 0.000 description 79
- 125000004429 atom Chemical group 0.000 description 59
- 239000010931 gold Substances 0.000 description 36
- 239000007789 gas Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- 239000000203 mixture Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- LRRBNLHPFPHVCW-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;hydrogen peroxide Chemical compound OO.OC(=O)C(O)C(O)C(O)=O LRRBNLHPFPHVCW-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Substances OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 arsenic hydrogen Chemical class 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-092440 | 2018-05-11 | ||
| JP2018092440A JP2019197868A (ja) | 2018-05-11 | 2018-05-11 | 半導体発光素子及び半導体発光素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202005111A true TW202005111A (zh) | 2020-01-16 |
Family
ID=68468277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108116262A TW202005111A (zh) | 2018-05-11 | 2019-05-10 | 半導體發光元件以及半導體發光元件的製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2019197868A (ja) |
| TW (1) | TW202005111A (ja) |
| WO (1) | WO2019216308A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582880A (zh) * | 2020-12-11 | 2021-03-30 | 睿创微纳(无锡)技术有限公司 | 一种红外探测器 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208888A (ja) * | 1983-05-13 | 1984-11-27 | Nec Corp | 化合物半導体発光素子 |
| JPS61228684A (ja) * | 1985-04-02 | 1986-10-11 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
| JPS63155683A (ja) * | 1986-12-19 | 1988-06-28 | Fujitsu Ltd | 半導体発光装置 |
| JPH0330486A (ja) * | 1989-06-28 | 1991-02-08 | Nec Corp | 多重量子井戸発光素子 |
| JPH05110135A (ja) * | 1991-10-14 | 1993-04-30 | Nikko Kyodo Co Ltd | 多層エピタキシヤル結晶構造 |
| JP3381976B2 (ja) * | 1993-09-16 | 2003-03-04 | 株式会社東芝 | 半導体レーザ装置 |
| JP2002111135A (ja) * | 2000-10-02 | 2002-04-12 | Furukawa Electric Co Ltd:The | 半導体レーザ素子、それを用いた光ファイバ増幅器用励起光源 |
| JP2002368341A (ja) * | 2001-06-08 | 2002-12-20 | Furukawa Electric Co Ltd:The | 半導体レーザ素子、それを用いた励起用光源 |
| JP2002368342A (ja) * | 2001-06-11 | 2002-12-20 | Anritsu Corp | 多重量子井戸半導体素子 |
| JP2004247435A (ja) * | 2003-02-12 | 2004-09-02 | Sharp Corp | 半導体発光素子 |
| KR102477094B1 (ko) * | 2016-01-08 | 2022-12-13 | 삼성전자주식회사 | 비대칭 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자 |
| JP6452651B2 (ja) * | 2016-06-30 | 2019-01-16 | Ｄｏｗａエレクトロニクス株式会社 | 半導体光デバイスの製造方法および半導体光デバイス |
-
2018
- 2018-05-11 JP JP2018092440A patent/JP2019197868A/ja active Pending
-
2019
- 2019-05-07 WO PCT/JP2019/018237 patent/WO2019216308A1/ja active Application Filing
- 2019-05-10 TW TW108116262A patent/TW202005111A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582880A (zh) * | 2020-12-11 | 2021-03-30 | 睿创微纳(无锡)技术有限公司 | 一种红外探测器 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019216308A1 (ja) | 2019-11-14 |
| JP2019197868A (ja) | 2019-11-14 |
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