TW202002118A - Point measurement method of Vertical-Cavity Surface-Emitting Laser grain preventing the thermal energy generated by the point-measurement of the high-power VCSEL grains from affecting the detection result of the neighboring grains - Google Patents
Point measurement method of Vertical-Cavity Surface-Emitting Laser grain preventing the thermal energy generated by the point-measurement of the high-power VCSEL grains from affecting the detection result of the neighboring grains Download PDFInfo
- Publication number
- TW202002118A TW202002118A TW107121929A TW107121929A TW202002118A TW 202002118 A TW202002118 A TW 202002118A TW 107121929 A TW107121929 A TW 107121929A TW 107121929 A TW107121929 A TW 107121929A TW 202002118 A TW202002118 A TW 202002118A
- Authority
- TW
- Taiwan
- Prior art keywords
- positions
- grains
- die
- spot
- point
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
本發明係與用於雷射晶粒測試之點測方法有關,特別是關於一種用於垂直式共振腔面射型雷射(Vertical-Cavity Surface-Emitting Laser;簡稱VCSEL)晶粒之點測方法。The invention relates to a spot measuring method used for laser crystal grain testing, in particular to a spot measuring method used for a vertical resonant cavity surface laser (Vertical-Cavity Surface-Emitting Laser; VCSEL for short) .
VCSEL為一種利用半導體製程製作之雷射二極體(Laser Diode),其光束是從正面發射,而非傳統的側面發射,故稱為面射型雷射(Surface-Emitting Laser)。一般側面發光之邊射型雷射(Edge-Emitting Laser)之測試,是在晶圓製成並整片切割成大量晶粒後,藉由一點測機點觸晶粒並從其側邊檢測其光學特性。而VCSEL是採取正面發光,可在晶粒尚未切割開時即進行光學特性之檢測。VCSEL is a laser diode made by a semiconductor process. Its beam is emitted from the front instead of the traditional side, so it is called a surface-emitting laser. The general side-emitting laser (Edge-Emitting Laser) test is that after the wafer is made and the whole piece is cut into a large number of die, the die is touched by a one-point measuring machine and detected from its side Optical characteristics. The VCSEL adopts front light emission, and the optical characteristics can be detected before the die is cut.
進一步而言,VCSEL晶粒是採取上下電極形式,亦即其正、負極分別位於其正面(上表面)及背面(下表面),此外,VCSEL晶粒更採取背部共陰極形式,亦即整片晶圓的下電極(或稱背部電極)為同一導體層,此導體層係作為該晶圓之所有晶粒的負極(共陰極),因此VCSEL晶粒必須在尚未切割開之狀態下進行點測。Further, the VCSEL die adopts the form of upper and lower electrodes, that is, the positive and negative electrodes are located on the front (upper surface) and the back (lower surface), respectively. In addition, the VCSEL die adopts the form of a common cathode on the back, that is, the entire chip The lower electrode (or back electrode) of the wafer is the same conductor layer, and this conductor layer serves as the negative electrode (common cathode) of all the die of the wafer, so the VCSEL die must be spot-tested before being cut. .
詳而言之,點測機利用探針點觸尚未切割開之VCSEL晶粒的上電極(亦即陽極、正極),以提供電源至VCSEL晶粒,使得VCSEL晶粒正面發光,再利用位於VCSEL晶粒正面上方之積分球接收光線,藉以分析VCSEL晶粒之光學特性。對於同一晶圓之晶粒的點測順序,現今之點測方法係採取相鄰晶粒連續測試之點測流程,亦即點測完一或多個(取決於點測機之探針數量)晶粒後隨即點測與該一或多個晶粒相鄰之另一或多個晶粒,如此之點測流程可將探針的移動距離減到最少,進而得到最高的檢測效率。In detail, the point measuring machine uses a probe to touch the upper electrode (ie, anode and positive electrode) of the VCSEL die that has not been cut to provide power to the VCSEL die, so that the VCSEL die emits light positively, and then is located at the VCSEL The integrating sphere above the front of the die receives light to analyze the optical characteristics of the VCSEL die. For the spot testing sequence of the die of the same wafer, the current spot testing method adopts the spot testing process of continuous testing of adjacent die, that is, one or more spot testing is completed (depending on the number of probes of the spot testing machine) Immediately after the die, another or more die adjacent to the one or more die are spotted. Such a spotting process can minimize the moving distance of the probe, thereby obtaining the highest detection efficiency.
對於高功率VCSEL晶粒之檢測,點測機亦可利用多根並聯之探針同時點觸同一VCSEL晶粒之上電極,以提供高電流脈衝至該VCSEL晶粒,藉以檢測該VCSEL晶粒在較高的工作電流下之光學特性。然而,在高功率VCSEL晶粒之檢測過程中,由於晶粒與晶粒之間相互連接,以高電流進行測試之晶粒產生的熱能容易傳導至其周圍之晶粒,在測試完一晶粒後隨即測試其相鄰晶粒之情況下,前者晶粒因檢測產生之熱能將會影響後者晶粒之光學特性,使得各晶粒之測試數據可能來自於晶粒本身之光學特性以及其他晶粒測試時產生的熱能影響,如此則降低了測試結果之正確性。For the detection of high-power VCSEL die, the spot tester can also use multiple parallel probes to touch the electrodes on the same VCSEL die at the same time to provide high current pulses to the VCSEL die to detect the presence of the VCSEL die. Optical characteristics at higher operating currents. However, during the inspection of high-power VCSEL die, due to the interconnection between the die and the die, the thermal energy generated by the die tested with high current is easily conducted to the die around it. In the case where the adjacent die is subsequently tested, the thermal energy generated by the former die will affect the optical properties of the latter die, so that the test data of each die may come from the optical properties of the die itself and other die The impact of the heat energy generated during the test reduces the accuracy of the test results.
為了將同一晶圓之大量晶粒快速地檢測完畢,現行不論任何種類之晶粒的檢測方式都採取如前述之相鄰晶粒連續測試之點測流程,以達到最高的檢測效率,如此卻忽略了檢測準確度的重要性,使得後續各種使用該晶粒的產品性能受到影響。In order to quickly inspect a large number of dies on the same wafer, the current inspection method for any type of dies adopts the point test process of continuous testing of adjacent dies as mentioned above to achieve the highest inspection efficiency, but it is ignored The importance of detection accuracy has affected the performance of various subsequent products using the die.
有鑑於上述缺失,本發明之主要目的在於提供一種用於VCSEL晶粒之點測方法,可避免高功率VCSEL晶粒因點測產生之熱能影響鄰近晶粒之檢測結果,進而提升檢測結果之正確性。In view of the above deficiencies, the main purpose of the present invention is to provide a spot measurement method for VCSEL die, which can avoid the thermal energy generated by the spot measurement of high-power VCSEL die from affecting the detection results of neighboring die, thereby improving the accuracy of the detection results Sex.
為達成上述目的,本發明所提供之用於垂直式共振腔面射型雷射晶粒之點測方法包含有下列步驟:In order to achieve the above-mentioned object, the method for spot measuring laser crystal grains of a vertical resonator provided by the present invention includes the following steps:
a) 提供一晶圓片,該晶圓片具有複數用於垂直式共振腔面射型雷射之晶粒,各該晶粒之工作電流係大於或等於1安培(較佳地,但不限於,小於或等於20安培),該晶圓片之晶粒位置對應於矩陣排列成第一數量列及第二數量行之第三數量個區域,各該區域具有矩陣排列成第四數量列及第五數量行之第六數量個位置,第四數量及第五數量皆大於或等於3,各該區域之至少一該位置設有一該晶粒;a) Provide a wafer with a plurality of crystal grains for the vertical cavity cavity surface emitting laser, and the working current of each crystal grain is greater than or equal to 1 ampere (preferably, but not limited to , Less than or equal to 20 amps), the die position of the wafer corresponds to the third number of regions arranged in a matrix with a first number of columns and a second number of rows, each of which has a matrix arranged in a fourth number of columns and The sixth quantity position of the five quantity rows, the fourth quantity and the fifth quantity are greater than or equal to 3, at least one of the positions of each region is provided with the die;
b) 點測該等區域之該第六數量個位置中之一特定位置的晶粒,直到位於該等區域之該特定位置的晶粒全部點測完畢,其中,該等區域之該特定位置係相互對應;以及b) Spot the grains at a specific position among the sixth number of positions in the areas until the grains located at the specific positions in the areas are all spotted, wherein the specific positions in the areas are Correspond to each other; and
c) 以該第六數量個位置逐一作為該特定位置而重複進行該步驟b)直到各該區域內的晶粒點測完畢。c) Repeat the step b) taking the sixth number of positions as the specific position one by one until the grain points in each of the areas are measured.
由於每一區域會有矩陣排列之第六數量個位置,且該第六數量係大於或等於9,而此點測方法的流程並不會連續點測同一區域內的晶粒,因此,連續點測之晶粒會相隔一段距離,且該段距離大於兩個晶粒的寬度,如此一來,即使各該晶粒因工作電流較高而會在檢測時產生較高之熱能進而影響周圍晶粒的光學特性,但並不會影響到下一個受測晶粒的光學特性。而且,同一晶圓片通常會有數以千計甚至更多個晶粒,因此區域數量(亦即第三數量)相當大,而在全部區域之特定位置的晶粒都點測完畢之後,才有可能再點測到重覆之區域的其他晶粒,如此一來,即使點測速度相當快,當點測流程再度回到已點測過之晶粒所屬之區域時,待測晶粒先前所受到已點測晶粒之熱能影響早已恢復,因此檢測結果並不會受到影響。藉此,本發明之點測方法可避免高功率VCSEL晶粒因點測產生之熱能影響鄰近晶粒之檢測結果,進而提升檢測結果之正確性。Since each area will have a sixth number of positions arranged in a matrix, and the sixth number is greater than or equal to 9, and the flow of this spot measurement method does not continuously spot the grains in the same area, therefore, consecutive spots The measured grains will be separated by a distance, and the distance is greater than the width of the two grains. In this way, even if each of the grains has a higher operating current, it will generate higher thermal energy during the detection and affect the surrounding grains. The optical properties of the optical fiber will not affect the optical properties of the next tested grain. Moreover, the same wafer usually has thousands or even more dies, so the number of regions (that is, the third number) is quite large, and only after all the dies at specific locations in all regions are measured. It may be possible to measure the other grains in the overlapping area again. In this way, even if the spotting speed is quite fast, when the spotting process returns to the area where the grains that have been spotted belong, the grains to be tested previously It has been recovered by the thermal energy of the spot-checked grains, so the test results will not be affected. In this way, the spot testing method of the present invention can avoid the thermal energy generated by the spot testing of the high-power VCSEL die from affecting the test results of neighboring die, thereby improving the accuracy of the test results.
進一步而言,雖然該第四數量及該第五數量係設定為大於或等於3,如此即可使連續點測之晶粒相隔足夠的距離,以避免點測熱能影響檢測結果。然而,為了兼顧良好的檢測準確度及檢測效率,該第四數量及該第五數量係以小於或等於5為較佳設定,藉此,每一區域只會有最少九個且最多二十五個位置,亦即該第六數量小於或等於25,如此即可避免在該步驟c)中重複進行該步驟b)太多次(小於或等於二十五次),進而在良好之檢測準確度的前提下提高檢測效率。Furthermore, although the fourth quantity and the fifth quantity are set to be greater than or equal to 3, the grains in continuous spot measurement can be separated by a sufficient distance to avoid the thermal energy of spot measurement affecting the detection result. However, in order to take into account both good detection accuracy and detection efficiency, the fourth number and the fifth number are preferably set to less than or equal to 5, whereby by this, each area will only have a minimum of nine and a maximum of twenty-five Positions, that is, the sixth quantity is less than or equal to 25, so as to avoid repeating the step b) too many times in the step c) (less than or equal to twenty-five times), and then in a good detection accuracy On the premise of improving detection efficiency.
為了兼顧良好的檢測準確度及檢測效率,該步驟b)可(但不限於)連續點測相鄰之區域之該特定位置的晶粒,亦即點測完一或多個(取決於點測機之探針數量)區域之特定位置的晶粒後隨即點測與該一或多個區域相鄰之另一或多個區域之特定位置的晶粒。換言之,在步驟b)中能以讓點測探針位移最少距離之方式設定點測區域的順序,進而在良好之檢測準確度的前提下提高檢測效率。In order to take into account both good detection accuracy and detection efficiency, this step b) may (but not limited to) continuously spot the grains at the specific location in the adjacent area, that is, one or more spots have been spotted (depending on spot measurement) The number of probes in the machine) the die at a specific position in the area, and then immediately spot the die at a specific position in another area or areas adjacent to the area or areas. In other words, in step b), the order of the spot measurement regions can be set in such a manner that the spot measurement probe is displaced by the minimum distance, thereby improving the detection efficiency under the premise of good detection accuracy.
同樣地,在步驟c)中該第六數量個位置逐一作為該特定位置之順序亦可藉由較佳之設定方式而在良好之檢測準確度的前提下提高檢測效率。例如,在各區域之位置排列成三乘三矩陣的情況下(亦即第四數量為3、第五數量為3、第六數量為9),該步驟c)可(但不限於)連續以該九個位置中之相鄰位置作為該特定位置而重複進行該步驟b)九次,意即,將該九個位置以連續相鄰之順序設定為第一位置至第九位置,並依序以第一位置至第九位置作為該特定位置而重複進行該步驟b)九次。該步驟c)亦可(但不限於)對該三行依序進行該步驟b),且對同一行之三個位置依序進行該步驟b)之後,再對下一行之三個位置依序進行該步驟b),意即,第一行的三個位置分別作為該特定位置之後,再由第二行的三個位置分別作為該特定位置,以此類推。或者,該步驟c)亦可(但不限於)對該三列依序進行該步驟b),且對同一列之三個位置依序進行該步驟b)之後,再對下一列之三個位置依序進行該步驟b),意即,第一列的三個位置分別作為該特定位置之後,再由第二列的三個位置分別作為該特定位置,以此類推。Similarly, the sequence of the sixth number of positions as the specific position in step c) can also improve the detection efficiency under the premise of good detection accuracy through a better setting method. For example, in the case where the positions of the regions are arranged in a three-by-three matrix (that is, the fourth quantity is 3, the fifth quantity is 3, and the sixth quantity is 9), this step c) may be (but not limited to) continuous The adjacent position among the nine positions is repeated as the specific position, and the step b) is repeated nine times, that is, the nine positions are set as the first position to the ninth position in the order of consecutive neighbors, and in order This step b) is repeated nine times with the first position to the ninth position as the specific position. The step c) may also (but not limited to) sequentially perform the step b) on the three rows, and sequentially perform the step b) on the three positions of the same row, and then sequentially on the three positions of the next row Performing this step b) means that after the three positions of the first row are respectively used as the specific positions, the three positions of the second row are respectively used as the specific positions, and so on. Alternatively, the step c) may also (but not limited to) perform the step b) on the three rows in sequence, and perform the step b) on the three positions in the same row in sequence, and then on the three positions in the next row The step b) is performed in order, that is, after the three positions in the first row are respectively used as the specific positions, the three positions in the second row are respectively used as the specific positions, and so on.
本發明之點測方法主要係用於高功率VCSEL晶粒,其工作電流係設定在1~20安培,進一步而言,在晶粒尺寸(通常是指正方形晶粒之邊長)大於或等於1000微米(晶粒尺寸越大,發射極數量越多,其工作電流越大)的應用下,本發明之點測方法相較於習用點測方法之提升檢測準確度效果更為顯著。The point measuring method of the present invention is mainly used for high-power VCSEL die, and its operating current is set at 1-20 amps. Further, the die size (usually refers to the side length of square die) is greater than or equal to 1000 Under the application of micrometers (the larger the grain size, the larger the number of emitters and the greater the operating current), the spot measurement method of the present invention has a more significant effect of improving the detection accuracy than the conventional spot measurement method.
有關本發明所提供之用於垂直式共振腔面射型雷射晶粒之點測方法的詳細構造、特點、組裝或使用方式,將於後續的實施方式詳細說明中予以描述。然而,在本發明領域中具有通常知識者應能瞭解,該等詳細說明以及實施本發明所列舉的特定實施例,僅係用於說明本發明,並非用以限制本發明之專利申請範圍。The detailed structure, characteristics, assembling or using method of the spot measurement method for the surface-resonant laser crystal grains provided by the present invention will be described in the detailed description of the subsequent embodiments. However, those of ordinary knowledge in the field of the present invention should be able to understand that these detailed descriptions and specific embodiments listed for implementing the present invention are only used to illustrate the present invention, and are not intended to limit the scope of the patent application of the present invention.
請參閱第1圖,本發明一較佳實施例所提供之用於垂直式共振腔面射型雷射晶粒之點測方法包含有下列步驟:Please refer to FIG. 1, a method for spot measuring laser crystal grains of a vertical resonator provided by a preferred embodiment of the present invention includes the following steps:
a) 提供一晶圓片10,該晶圓片10具有複數用於垂直式共振腔面射型雷射之晶粒20,各該晶粒20之工作電流係大於或等於1安培。較佳地,各該晶粒20之工作電流可(但不限於)小於或等於20安培。換言之,各該晶粒20係屬於高功率VCSEL晶粒。此步驟a)可藉由進行晶圓片掃描而得到完整的晶圓片10之晶粒20分佈圖。a) A
實際之晶圓片10具有數以千計甚至更多個相當微小之晶粒20,且該等晶粒20係尚未切割開而彼此相連,然而,為了簡化圖式並便於說明,本發明之圖式並未依照實際比例繪製,而係將晶粒20繪製得較大而使得該晶圓片10僅有大約兩百個晶粒20,且該等晶粒20並未全部繪製出來。詳而言之,在第1圖之第一流程P1中僅以一圓形示意出該晶圓片10而未繪製該等晶粒20,在第1圖之第二流程P2及第三流程P3中則以多數個方形示意出部分之晶粒20而未繪製出全部之晶粒20。The
此外,如第1圖之第一流程P1所示,該晶圓片10之晶粒20位置對應於矩陣排列成第一數量(以下簡稱I)列及第二數量(以下簡稱J)行之第三數量(以下簡稱K)個區域30,如第2圖所示,各該區域30具有矩陣排列成第四數量(以下簡稱M)列及第五數量(以下簡稱N)行之第六數量(以下簡稱R)個位置32,M及N皆大於或等於3,各該區域30之至少一位置32設有一晶粒20。此步驟a)所述之區域30及位置32可由測試人員在進行測試時規劃,或者由機台供應商預先設定於測試機台內。In addition, as shown in the first flow P1 of FIG. 1, the position of the
如第1圖所示,在本實施例中,該晶圓片10之晶粒20位置對應於五行及五列之區域30,亦即I及J皆等於5,則區域30之數量K等於25。如第2圖所示,在本實施例中,各該區域30之位置32係排列成三行及三列,亦即M及N皆等於3,則各該區域30之位置32數量R等於9。As shown in FIG. 1, in this embodiment, the position of the
如前所述,本發明之圖式係將晶粒20尺寸繪製得較大而將晶粒20數量繪製得較少,因此第1圖中所顯示二十五個區域30係比實際之區域30數量要少得多,如此同樣是為了簡化圖式並便於說明。此外,實際之晶圓片10的晶粒20係尚未切割開而彼此相連,然而,為了清楚地表示出區域30、位置32以及晶粒20,本發明之圖式中該等晶粒20係相互分離,藉以明顯地區分出位置32與晶粒20。As mentioned before, the pattern of the present invention draws the size of the
由於晶圓片10為圓形,而本實施例之區域30係(但不限於)規劃成方形,因此並非全部的位置32皆分別設有一晶粒20。在本實施例中,中央九個區域30之九個位置32皆分別設有一晶粒20,如第2圖所示;而外圍十六個區域30中,各區域30之九個位置32僅有其中一至七個位置32設有晶粒20。Since the
b) 點測該等區域30之R個位置32中之一特定位置的晶粒20,直到位於該等區域30之該特定位置的晶粒20全部點測完畢,其中,該等區域30之該特定位置係相互對應。這邊所謂的點測包含使用積分球接收晶粒20所產生的光線進行光電特性分析測試。b) Spotting the
在本實施例中,各區域30有九個位置32,此步驟b)係選定該九個位置32中的一個位置32作為該特定位置,且每個區域30的特定位置係相互對應,舉例而言,第1圖之第二流程P2係選定左上角之位置為該特定位置,意即,該特定位置為第2圖所示之位於第1列及第1行的位置32。然後,利用一點測機(圖中未示)點測該等區域30之該特定位置的晶粒20,在第1圖之第二流程P2中,僅有其中十六個區域30之該特定位置(左上角)設有晶粒20,因此僅點測該十六個晶粒20,該點測機可能先點測該十六個晶粒20中的一個或多個(取決於點測機之探針數量)晶粒20,點測完後再點測該十六個晶粒20中的另一個或多個晶粒20,直到該十六個晶粒20全部點測完畢,即完成此步驟b)。In this embodiment, each
c) 以該R個位置32逐一作為該特定位置而重複進行該步驟b) 直到各該區域30內的晶粒20點測完畢。c) Repeat the step b) using the R positions 32 as the specific positions one by one until the
在本實施例中,各區域30之位置32數量R等於9,因此需進行該步驟b)九次,才可點測完全部之晶粒20。舉例而言,第1圖之第二流程P2選定左上角之位置為該特定位置而將該十六個晶粒20全部點測完畢,即完成第一次步驟b),然後,第二次步驟b)之進行可如第1圖之第三流程P3,係選定中上之位置為該特定位置,意即,該特定位置為第2圖所示之位於第2列及第1行的位置32,在第1圖之第三流程P3中,僅有其中十四個區域30之該特定位置(中上)設有晶粒20,因此第二次步驟b)僅點測該十四個晶粒20。然後再逐一選定該九個位置32中剩下的七個位置32作為該特定位置,而以類同於第一次及第二次步驟b)的方式分別進行第三次至第九次步驟b),即可將全部晶粒20點測完畢而完成此步驟c)。In this embodiment, the number R of the
藉此,本發明之點測方法並不會連續點測同一區域30內的晶粒20,因此,連續點測之晶粒20會相隔一段距離,且該段距離係至少大於兩個晶粒20之寬度,如此一來,即使各該晶粒20因工作電流較高而會在檢測時產生較高之熱能進而影響周圍晶粒20的光學特性,但並不會影響到下一個受測晶粒20的光學特性。而且,該晶圓片10實際上有相當大量之晶粒20,因此區域數量K實際上相當大,而在全部區域30之特定位置的晶粒20都點測完畢之後,才有可能再點測到重覆之區域的其他晶粒20,如此一來,即使點測速度相當快,當點測流程再度回到已點測過之晶粒20所屬之區域30時,待測晶粒20先前所受到已點測晶粒20之熱能影響早已恢復,因此檢測結果並不會受到影響。因此,本發明之點測方法可避免高功率VCSEL晶粒20因點測產生之熱能影響鄰近晶粒20之檢測結果,進而提升檢測結果之正確性。In this way, the spot measuring method of the present invention does not continuously spot the die 20 in the
進一步而言,雖然M及N係設定為大於或等於3,如此即可使連續點測之晶粒20相隔足夠的距離,以避免點測熱能影響檢測結果。然而,為了兼顧良好的檢測準確度及檢測效率,M及N係以小於或等於5為較佳設定,藉此,每一區域30只會有最少九個且最多二十五個位置32,亦即R小於或等於25,如此即可避免在該步驟c)中重複進行該步驟b)太多次(小於或等於二十五次),進而在良好之檢測準確度的前提下提高檢測效率。Further, although M and N are set to be greater than or equal to 3, the
為了兼顧良好的檢測準確度及檢測效率,前述之步驟b)可(但不限於)連續點測相鄰之區域30之該特定位置的晶粒20。以第1圖之第二流程P2為例,該點測機點測完該十六個晶粒20中的一個或多個晶粒20後隨即點測該一或多個晶粒20之相鄰區域的另一個或多個晶粒20,直到該十六個晶粒20全部點測完畢。換言之,在步驟b)中能以使該點測機之探針位移最少距離之方式設定點測之區域30的順序,進而在良好之檢測準確度的前提下提高檢測效率。In order to take into account both good detection accuracy and detection efficiency, the aforementioned step b) may (but not limited to) continuously spot test the die 20 at the specific position of the
同樣地,為了兼顧良好的檢測準確度及檢測效率,前述之步驟c)可(但不限於)連續以該R個位置中之相鄰位置作為該特定位置而重複進行該步驟b)R次。意即,在本實施例中,將各區域30之九個位置32以連續相鄰之順序設定為第一位置至第九位置,例如,第一行及第一列之位置32為第一位置、第一行及第二列之位置32為第二位置、第一行及第三列之位置32為第三位置、第二行及第三列之位置32為第四位置、第二行及第二列之位置為第五位置,以此類推,然後,依序以第一位置至第九位置作為該特定位置而重複進行該步驟b)九次。該步驟c)亦可(但不限於)對該三行依序進行該步驟b),且對同一行之三個位置32依序進行該步驟b)之後,再對下一行之三個位置32依序進行該步驟b),亦即如前述之例子中,第一行之三個位置32設定為第一至三位置,而第二行之三個位置32則接著設定為第四至六位置,以此類推。或者,該步驟c)亦可(但不限於)對該三列依序進行該步驟b),且對同一列之三個位置32依序進行該步驟b)之後,再對下一列之三個位置32依序進行該步驟b),意即,將第一列之三個位置32設定為第一至三位置,而第二列之三個位置32則接著設定為第四至六位置,以此類推。Similarly, in order to balance good detection accuracy and detection efficiency, the foregoing step c) may (but is not limited to) continuously repeat the step b) R times with the adjacent positions among the R positions as the specific positions. That is to say, in this embodiment, the nine
如前所述,本發明之點測方法主要係用於高功率VCSEL晶粒,其工作電流係設定在1~20安培,進一步而言,在晶粒20尺寸(通常是指正方形晶粒之邊長)大於或等於1000微米(晶粒尺寸越大,發射極數量越多,其工作電流越大)的應用下,本發明之點測方法相較於習用點測方法之提升檢測準確度效果更為顯著。As mentioned above, the point measurement method of the present invention is mainly used for high-power VCSEL die, and its operating current is set at 1-20 amps. Further, at the size of die 20 (usually refers to the edge of a square die (Long) greater than or equal to 1000 microns (the larger the grain size, the greater the number of emitters, the greater the operating current), the spot measurement method of the present invention is more effective than conventional spot measurement methods in improving detection accuracy Notable.
最後,必須再次說明,本發明於前揭實施例中所揭露的構成元件,僅為舉例說明,並非用來限制本案之範圍,其他等效元件的替代或變化,亦應為本案之申請專利範圍所涵蓋。Finally, it must be explained again that the constituent elements disclosed in the foregoing embodiments of the present invention are only examples and are not intended to limit the scope of the case. The substitution or change of other equivalent elements should also be the scope of the patent application of the case Covered.
10‧‧‧晶圓片20‧‧‧晶粒30‧‧‧區域32‧‧‧位置P1‧‧‧第一流程P2‧‧‧第二流程P3‧‧‧第三流程I‧‧‧第一數量J‧‧‧第二數量M‧‧‧第四數量N‧‧‧第五數量10‧‧‧
第1圖為本發明一較佳實施例所提供之用於垂直式共振腔面射型雷射晶粒之點測方法的示意圖;以及 第2圖為本發明該較佳實施例所提供之用於垂直式共振腔面射型雷射晶粒之點測方法中一區域的示意圖。FIG. 1 is a schematic diagram of a spot measurement method for a surface resonator type laser die of a vertical resonator provided by a preferred embodiment of the present invention; and FIG. 2 is a view provided by the preferred embodiment of the present invention. A schematic diagram of an area in the point measurement method of the surface-emitting laser crystal grains of the vertical resonator.
10‧‧‧晶圓片 10‧‧‧ Wafer
20‧‧‧晶粒 20‧‧‧ grain
30‧‧‧區域 30‧‧‧Region
P1‧‧‧第一流程 P1‧‧‧ First process
P2‧‧‧第二流程 P2‧‧‧ Second process
P3‧‧‧第三流程 P3‧‧‧ Third process
I‧‧‧第一數量 I‧‧‧Number
J‧‧‧第二數量 J‧‧‧ second quantity
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107121929A TWI652751B (en) | 2018-06-26 | 2018-06-26 | Point measuring method for surface-emitting laser crystal grains of vertical resonance cavity |
CN201910192636.3A CN110646720B (en) | 2018-06-26 | 2019-03-14 | Point measurement method for vertical resonant cavity surface emitting laser grains |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107121929A TWI652751B (en) | 2018-06-26 | 2018-06-26 | Point measuring method for surface-emitting laser crystal grains of vertical resonance cavity |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI652751B TWI652751B (en) | 2019-03-01 |
TW202002118A true TW202002118A (en) | 2020-01-01 |
Family
ID=66590947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107121929A TWI652751B (en) | 2018-06-26 | 2018-06-26 | Point measuring method for surface-emitting laser crystal grains of vertical resonance cavity |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN110646720B (en) |
TW (1) | TWI652751B (en) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01132976A (en) * | 1987-11-17 | 1989-05-25 | Mitsubishi Electric Corp | Method and apparatus for checking semiconductor laser |
US7026178B2 (en) * | 2001-11-13 | 2006-04-11 | Applied Optoelectronics, Inc. | Method for fabricating a VCSEL with ion-implanted current-confinement structure |
US7482828B2 (en) * | 2005-07-13 | 2009-01-27 | Finisar Corporation | Methods and apparatus for device testing at the wafer level |
US20100207652A1 (en) * | 2007-10-08 | 2010-08-19 | Amst Co., Ltd. | Method for wafer test and probe card for the same |
TW201122505A (en) * | 2009-12-25 | 2011-07-01 | Ssu-Pin Ma | Fast testing wafer and wafer testing method |
TW201216391A (en) * | 2010-10-11 | 2012-04-16 | Ind Tech Res Inst | Detection method and detection device for LED chips on wafer and transparent probe card thereof |
TWI450350B (en) * | 2011-09-20 | 2014-08-21 | Chroma Ate Inc | Test method of multi - grain and its point measuring machine |
TWI451106B (en) * | 2012-03-26 | 2014-09-01 | Silicon Motion Inc | Wafer testing system and testing method thereof |
TW201500750A (en) * | 2013-06-25 | 2015-01-01 | Mpi Corp | Wafer testing machine |
CN104360256B (en) * | 2014-10-21 | 2017-07-28 | 华灿光电(苏州)有限公司 | A kind of photoelectric test method of diode |
CN106597037B (en) * | 2015-10-20 | 2019-07-16 | 创意电子股份有限公司 | Probe card and test method |
US10283330B2 (en) * | 2016-07-25 | 2019-05-07 | Lam Research Corporation | Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators |
-
2018
- 2018-06-26 TW TW107121929A patent/TWI652751B/en active
-
2019
- 2019-03-14 CN CN201910192636.3A patent/CN110646720B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN110646720B (en) | 2021-06-22 |
CN110646720A (en) | 2020-01-03 |
TWI652751B (en) | 2019-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI414784B (en) | Substrate inspection method | |
US6334097B1 (en) | Method of determining lethality of defects in circuit pattern inspection method of selecting defects to be reviewed and inspection system of circuit patterns involved with the methods | |
CN1333466A (en) | Semiconductor device test method and apparatus | |
JP6122965B2 (en) | Inspection system | |
US7332362B2 (en) | Method for inspecting semiconductor device | |
TWI660249B (en) | Defect pattern grouping method and system | |
US11121046B2 (en) | Wafer-level testing method and test structure thereof | |
JPH0750331A (en) | Method and apparatus for evaluating semiconductor light-emitting element | |
CN104916559A (en) | Bit failure detection method combined with entity coordinate | |
TW201514513A (en) | Adaptive electrical testing of wafers | |
TWI652751B (en) | Point measuring method for surface-emitting laser crystal grains of vertical resonance cavity | |
CN109655737B (en) | Wafer testing method | |
CN110517970B (en) | Method for detecting defects of wafer back | |
CN109698138B (en) | Semiconductor failure positioning test unit and failure positioning method thereof | |
CN106057696A (en) | Photoelectric-separation-based photoelectric testing method for diode | |
TW201840968A (en) | Cascade defect inspection | |
KR101153339B1 (en) | Method for inspecting semiconductor light emitting device | |
CN113078072A (en) | Probe detection method | |
CN103094142A (en) | Special wafer layout configuration method used for detecting probe card and manufacture of wafer | |
CN112582383A (en) | Chip structure and chip detection method | |
JP2005051230A (en) | Semiconductor device and method for searching for predetermined position on the same | |
CN116865100A (en) | VCSEL wafer | |
TWI450350B (en) | Test method of multi - grain and its point measuring machine | |
CN104319244B (en) | Positioning method of failure center point of chip | |
JP3011504B2 (en) | Evaluation device for semiconductor light emitting device |