TWI450350B - Test method of multi - grain and its point measuring machine - Google Patents

Test method of multi - grain and its point measuring machine Download PDF

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TWI450350B
TWI450350B TW100133749A TW100133749A TWI450350B TW I450350 B TWI450350 B TW I450350B TW 100133749 A TW100133749 A TW 100133749A TW 100133749 A TW100133749 A TW 100133749A TW I450350 B TWI450350 B TW I450350B
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die
tested
probe
probe sets
spot
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TW201314807A (en
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Chroma Ate Inc
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Description

多晶粒之測試方法及其點測機Multi-grain test method and its spot measuring machine

本發明係關於一種測試方法及其點測機,尤指一種多晶粒之測試方法及其點測機。The invention relates to a test method and a spot measuring machine thereof, in particular to a multi-grain test method and a spot measuring machine thereof.

發光二極體(LED)的技術日益成熟,應用的領域也越來越廣,例如一般住宅所使用之壁燈、輔助照明燈與庭園燈等,或者是運用於顯示器之背光源。The technology of light-emitting diodes (LEDs) is becoming more and more mature, and the fields of application are becoming wider and wider, such as wall lamps, auxiliary lights and garden lights used in general houses, or backlights used in displays.

然而隨著發光二極體的快速成長,除了發光二極體本身具有的高亮度、高功率、較長壽命等優點,要如何維持發光二極體之品質亦相當重要,因此發光二極體製造完成後,必須檢測發光二極體之發光特性,以判斷發光二極體之品質是否良好。However, with the rapid growth of the light-emitting diode, in addition to the high brightness, high power, and long life of the light-emitting diode itself, how to maintain the quality of the light-emitting diode is also very important, so the light-emitting diode manufacturing After completion, it is necessary to detect the light-emitting characteristics of the light-emitting diode to determine whether the quality of the light-emitting diode is good.

發光二極體在製造時會成長於晶圓之上,再利用雷射切割形成複數LED晶粒於晶圓上。LED晶粒進行檢測時,則是以點測機的一探針組進行,以致能LED晶粒位於同一側面的兩個電極,使得受測的單顆LED晶粒發光,並據以感測LED晶粒之發光特性。The LEDs are grown on the wafer during fabrication, and laser cutting is used to form a plurality of LED dies on the wafer. When the LED die is detected, it is performed by a probe set of the spot measuring machine, so that the LED chips are located on the same side of the two electrodes, so that the single LED die to be tested emits light, and accordingly the LED is sensed. The luminescent properties of the grains.

為了增加檢測的速度,點測機逐漸朝多晶粒點測的方向發展,亦即點測機開始具有複數探針組,以於檢測時同時對多個晶粒進行檢測。然而在點測的過程中,晶粒是黏著於一薄膜之上,此薄膜會逐漸收縮而導致部份晶粒產生偏移,也因此使得探針無法正確的致能LED晶粒的電極。In order to increase the speed of detection, the measuring machine gradually develops toward the direction of multi-die spot measurement, that is, the spot measuring machine starts to have a plurality of probe sets for detecting multiple dies at the same time. However, during the spotting process, the die adheres to a film, and the film gradually shrinks, causing some of the grains to shift, and thus the probe cannot properly enable the electrodes of the LED die.

緣此,本發明之一目的係提供一種多晶粒之測試方法,此測試方法能夠在晶粒偏移的狀況發生時,繼續正確且快速的進行多晶粒點測動作。Accordingly, it is an object of the present invention to provide a multi-die test method that can continue to perform correct and fast multi-die spotting operations when a grain offset condition occurs.

同時,本發明亦提供用於多晶粒測試之點測機,以實現上述之多晶粒之測試方法。At the same time, the present invention also provides a spot measuring machine for multi-die testing to achieve the above-described multi-die test method.

一種多晶粒之測試方法,係供一點測機對複數個待測晶粒進行點測,該點測機係包含複數探針組,該測試方法係包括下列步驟:取得該複數個待測晶粒之一位置資料;根據該位置資料,以該些探針組對未產生偏移之待測晶粒進行點測;以及根據該位置資料移動該些探針組與該些待測晶粒之至少一者,以該些探針組之至少一者對產生偏移之待測晶粒進行點測。A multi-die test method is used for spot testing a plurality of test dies for a plurality of test dies, the test finder comprising a plurality of probe sets, the test method comprising the steps of: obtaining the plurality of crystals to be tested One position data of the granules; according to the position data, spotting the unmeasured dies with the offsets by using the probe sets; and moving the probe sets and the dies to be tested according to the position data At least one of the probe sets is spotted with at least one of the probe sets to produce an offset.

於本發明之一較佳實施例中,其中根據該位置資料以該些探針組,對未產生偏移之待測晶粒進行點測係包括下列步驟:當該些探針組之位置對應到該位置資料時,判斷該些待測晶粒未產生偏移;以及控制該些探針組處於一出針狀態,藉以對未產生偏移之待測晶粒進行點測。In a preferred embodiment of the present invention, the spotting of the die to be tested without the offset according to the location data includes the following steps: when the positions of the probe groups correspond to When the data is obtained, it is judged that the die to be tested does not have an offset; and the probe sets are controlled to be in a pin-out state, thereby performing spot measurement on the die to be tested without offset.

於本發明之一較佳實施例中,其中根據該位置資料移動該些探針組與該些待測晶粒之至少一者,以該些探針組之至少一者對產生偏移之待測晶粒進行點測係包括下列步驟:當該些探針組之位置無法對應到該位置資料時,判斷該些待測晶粒產生偏移;以及移動該些探針組與該些待測晶粒之至少一者,並控制該些探針組之至少一者處於該出針狀態,藉以對產生偏移之待測晶粒進行點測。In a preferred embodiment of the present invention, wherein the at least one of the probe sets and the at least one of the test dies are moved according to the position data, and at least one of the probe sets is offset. Measuring the die to perform the spot measurement system includes the following steps: when the positions of the probe sets cannot correspond to the position data, determining that the die to be tested is offset; and moving the probe sets and the to-be-tested At least one of the dies and controlling at least one of the sets of probes to be in the ejector state, thereby performing a spot test on the dies to be measured that are offset.

本發明更揭露一種多晶粒之點測機,以同時測試複數個待測晶粒,該點測機係包含檢測平台、複數探針組、複數個收針模組以及一控制模組;檢測平台係用以承載該些待測晶粒;複數個收針模組係分別連結於該些探針組,以控制該些探針組之至少一者相對於該些待測晶粒垂直移動處於一收針狀態;控制模組係用以根據該些待測晶粒之一位置資料移動該些探針組與該檢測平台之至少一者進行上下作動與平面位移。The invention further discloses a multi-die spot measuring machine for simultaneously testing a plurality of die to be tested, the spot measuring machine comprising a detecting platform, a plurality of probe sets, a plurality of pin collecting modules and a control module; The platform is configured to carry the die to be tested; a plurality of pin collection modules are respectively coupled to the probe sets to control at least one of the probe sets to be vertically moved relative to the die to be tested a pin-receiving state; the control module is configured to move the probe set and the detection platform to perform up-and-down actuation and plane displacement according to the position data of the one of the die to be tested.

於本發明之一較佳實施例中,其中該收針模組係包含一音圈馬達與一電池閥之至少一者。In a preferred embodiment of the present invention, the pin collection module includes at least one of a voice coil motor and a battery valve.

於本發明之一較佳實施例中,另包含一掃描模組,係用以對該些待測晶粒進行掃描,以取得該位置資料。In a preferred embodiment of the present invention, a scanning module is further included for scanning the die to be tested to obtain the location data.

相較於習知之點測機測試程序與點測機,本發明之多晶粒之測試方法及其點測機不僅能夠同時對複數個晶粒進行點測,更能夠在晶粒產生偏移時,繼續正確的進行點測動作,而不需停止整個測試程序,因此能夠達到較習知之點測機測試程序更有效率的測試。Compared with the conventional spot tester test program and the spot measuring machine, the multi-grain test method and the spot measuring machine of the present invention can not only perform spot measurement on a plurality of crystal grains at the same time, but also can be used when the crystal grains are offset. , continue to perform the correct test action without stopping the entire test program, so it can achieve more efficient test than the known test machine test program.

本發明所採用的具體實施例,將藉由以下之實施例及圖式作進一步之說明。The specific embodiments of the present invention will be further described by the following examples and drawings.

以下茲列舉一較佳實施例以說明本發明,然熟習此項技藝者皆知此僅為一舉例,而並非用以限定發明本身。有關此較佳實施例之內容詳述如下。The invention is illustrated by the following description of the preferred embodiments of the invention, and is not intended to limit the invention. The contents of this preferred embodiment are detailed below.

請參閱第一圖、第二圖與第三圖,第一圖係為複數個晶粒皆無偏移時,探針組與晶粒間之相對位置關係圖,第二圖係為晶粒產生偏移時,探針組與晶粒間之相對位置關係圖,第三圖係為點測機多晶粒測試程序之步驟圖。本發明之點測機多晶粒測試程序,係供點測機對複數個待測晶粒12a與12b進行點測,點測機係包含複數探針組11a與11b;其中,探針組11a與11b係包含探針111a、112a、111b與112b,以於點測時致能待測晶粒12a與12b;如第一圖所示,當待測晶粒12a與12b之位置正確時,探針組11a與11b之探針111a、112a、111b與112b之位置係可以對應到待測晶粒12a與12b之電極,而如第二圖所示,當待測晶粒12a之位置產生偏移時,探針組11a之探針111a與112a之位置係無法對應到待測晶粒12a之電極,若此時繼續依照正常程序進行點測,就會無法致能晶粒12a之電極,並使點測之結果失去參考性。Please refer to the first figure, the second figure and the third figure. The first figure is the relative positional relationship between the probe set and the die when there are no offsets of the plurality of crystal grains, and the second figure is the grain generation bias. The relative positional relationship between the probe set and the die during shifting, and the third figure is the step diagram of the multi-die test procedure of the spot tester. The multi-die test program of the spot measuring machine of the present invention is for measuring the plurality of test pieces 12a and 12b by the spot measuring machine, and the spot measuring machine comprises a plurality of probe sets 11a and 11b; wherein the probe set 11a And 11b include probes 111a, 112a, 111b and 112b for enabling the die 12a and 12b to be tested during the spotting; as shown in the first figure, when the positions of the die 12a and 12b to be tested are correct, The positions of the probes 111a, 112a, 111b, and 112b of the needle sets 11a and 11b may correspond to the electrodes of the die 12a and 12b to be tested, and as shown in the second figure, the position of the die 12a to be tested is shifted. The positions of the probes 111a and 112a of the probe set 11a cannot correspond to the electrodes of the die 12a to be tested. If the spot measurement is continued according to the normal procedure, the electrodes of the die 12a cannot be enabled and The result of the spot test loses the reference.

因此本發明之點測機多晶粒測試程序係包括以下步驟:Therefore, the multi-die test program of the spot measuring machine of the present invention comprises the following steps:

S101:取得該複數個待測晶粒12a與12b之一位置資料;S101: Obtain a position data of the plurality of die to be tested 12a and 12b;

S103:根據該位置資料以該些探針組11a與11b,對未產生偏移之待測晶粒12a與12b進行點測;其中,本步驟於一較佳實施例中更可以包含以下步驟:首先,將該位置資料與該些探針組11a與11b之一探針組位置資料進行比對,以判別出未產生偏移之待測晶粒12a與12b;接著,再控制該些探針組11a與11b處於一出針狀態,藉以對未產生偏移之待測晶粒12a與12b進行點測;在此所述之出針狀態係指探針組11a與11b之水平位置較接近待測晶粒12a與12b,相反地,當探針組11a與11b之水平位置較遠離待測晶粒12a與12b時,則可視為一收針狀態。S103: Perform a spot test on the undetected die 12a and 12b with the probe sets 11a and 11b according to the location data. The step may further include the following steps in a preferred embodiment: First, the position data is compared with the probe set position data of the probe sets 11a and 11b to determine the unmeasured die 12a and 12b; and then the probes are controlled. The groups 11a and 11b are in a needle-out state, thereby performing spot measurement on the unmeasured crystal grains 12a and 12b which are not offset; the needle-out state described herein means that the horizontal positions of the probe groups 11a and 11b are relatively close to each other. The die 12a and 12b are measured. Conversely, when the horizontal positions of the probe sets 11a and 11b are farther away from the die 12a and 12b to be tested, it can be regarded as a pinning state.

S105:根據該位置資料移動該些探針組11a與11b與該些待測晶粒12a與12b之至少一者,對產生偏移之待測晶粒12a與12b進行點測;其中,本步驟於一較佳實施例中更可以包含以下步驟:首先,將該位置資料與該些探針組11a與11b之探針組位置資料進行比對,以判別出產生偏移之待測晶粒12a與12b;接著,再移動該些探針組11a與11b與該些待測晶粒12a與12b之至少一者,並控制該些探針組11a與11b之至少一者處於出針狀態,藉以對產生偏移之待測晶粒12a與12b進行點測。S105: moving the probe sets 11a and 11b and the at least one of the die to be tested 12a and 12b according to the position data, and performing spot measurement on the generated die 12a and 12b with offset; wherein, this step In a preferred embodiment, the method further includes the following steps: first, comparing the location data with the probe set location data of the probe sets 11a and 11b to determine the offset die 12a to be measured. And 12b; then, moving the probe sets 11a and 11b and at least one of the die to be tested 12a and 12b, and controlling at least one of the probe sets 11a and 11b to be in a needle-out state, thereby Spot measurements are made on the die to be tested 12a and 12b which are offset.

在本發明之另一實施例中,多晶粒之點測機也可以先對產生偏移之待測晶粒進行點測,再對未產生偏移之待測晶粒進行點測,也就是先進行步驟S105,再進行步驟S103。因此,上述的步驟並無順序的限制,測試的順序以測試時間愈短者為較佳實施例。In another embodiment of the present invention, the multi-die spot measuring machine may first perform spot measurement on the die to be measured with offset, and then perform spot measurement on the die to be tested without offset, that is, Step S105 is performed first, and then step S103 is performed. Therefore, the above steps are not limited in sequence, and the order of testing is the preferred embodiment with the shorter test time.

請參閱第四圖,第四圖係為本發明多晶粒之點測機之結構圖。本發明更揭露一種多晶粒之點測機200,以同時測試複數個待測晶粒300,該點測機200係包含檢測平台21、掃描模組22、複數個探針組23、複數個收針模組24以及一控制模組25。Please refer to the fourth figure, which is a structural diagram of the multi-die spot measuring machine of the present invention. The present invention further discloses a multi-die spot measuring machine 200 for simultaneously testing a plurality of die 300 to be tested, the spot measuring machine 200 comprising a detecting platform 21, a scanning module 22, a plurality of probe sets 23, and a plurality of The needle collection module 24 and a control module 25 are provided.

檢測平台21係用以承載該些待測晶粒300;掃描模組22係用以對該些待測晶粒300進行掃描,以取得該些待測晶粒300之一位置資料,此外,待測晶粒300可由外部預先掃描產生之位置資料,則點測機200可直接匯入位置資料並判別待測晶粒300是否產生偏移。The detecting platform 21 is configured to carry the die 300 to be tested; the scanning module 22 is configured to scan the die 300 to obtain the position data of the die 300, and further, The die 300 can be pre-scanned by the externally generated position data, and the spotting machine 200 can directly import the position data and determine whether the die 300 to be measured is offset.

複數個收針模組24係分別連結於該些探針組23,以控制該些探針組23之至少一者相對於該些待測晶粒300垂直移動;其中,探針組23可以包含探針231與232,收針模組則分別連結探針231與232,據以控制探針231與232相對於該些待測晶粒300垂直移動;當探針組23朝待測晶粒300移動時,即為前述之出針狀態。反之,當探針組23朝待測晶粒300之反方向移動時,即為前述之收針狀態;於本發明之一較佳實施例中,該收針模組24係可以是一音圈馬達或一電池閥。A plurality of pin collection modules 24 are respectively coupled to the probe sets 23 to control at least one of the probe sets 23 to move vertically relative to the die 300 to be tested; wherein the probe set 23 can include The probes 231 and 232 are connected to the probes 231 and 232 respectively, so as to control the vertical movement of the probes 231 and 232 relative to the die 300 to be tested; when the probe set 23 faces the die 300 to be tested When moving, it is the aforementioned needle-out state. On the other hand, when the probe set 23 is moved in the opposite direction of the die 300 to be tested, it is the aforementioned pinning state; in a preferred embodiment of the present invention, the pinching module 24 can be a voice coil. Motor or a battery valve.

控制模組25可根據待測晶粒300之位置資料移動探針組23與檢測平台21之至少一者進行上下作動與平面位移。點測機200進行點測有二種方式,通常是先將探針組23調整至固定位置後,由控制模組25根據待測晶粒300之位置資料移動檢測平台21進行點測。另一方面,若檢測平台21為固定,則控制模組25移動探針組23進行點測。The control module 25 can move up and down and planar displacement according to at least one of the probe set 23 and the detection platform 21 according to the position data of the die 300 to be tested. There are two ways for the spotting machine 200 to perform the spot test. Generally, after the probe set 23 is first adjusted to a fixed position, the control module 25 moves the detecting platform 21 according to the position data of the die 300 to be tested. On the other hand, if the detection platform 21 is stationary, the control module 25 moves the probe set 23 to perform a spot test.

綜合以上所述,相較於習知之點測機測試程序與點測機,本發明之多晶粒之測試方法及其點測機不僅能夠同時對複數個待測晶粒進行點測,更能夠在待測晶粒產生偏移時,繼續正確的進行點測動作,而不需停止整個測試程序,因此能夠達到較習知之點測機測試程序更有效率的測試。In summary, the multi-die test method and the spot measuring machine of the present invention can not only perform spot measurement on a plurality of die to be tested at the same time, but also can be compared with the conventional spot tester test program and the spot tester. When the die to be measured is offset, the correct spotting action is continued without stopping the entire test procedure, so that a more efficient test than the conventional spot tester can be achieved.

藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed.

11a、11b...探針組11a, 11b. . . Probe set

111a、112a、111b、112b...探針111a, 112a, 111b, 112b. . . Probe

12a、12b...待測晶粒12a, 12b. . . Grain to be tested

200...點測機200. . . Point measuring machine

21...檢測平台twenty one. . . Detection platform

22...掃描模組twenty two. . . Scanning module

23...探針組twenty three. . . Probe set

231、232...探針231, 232. . . Probe

24...收針模組twenty four. . . Needle collection module

25...控制模組25. . . Control module

300...待測晶粒300. . . Grain to be tested

S101-S105...點測機多晶粒測試程序步驟S101-S105. . . Dot tester multi-die test procedure

第一圖係為複數個晶粒皆無偏移時,探針組與晶粒間之相對位置關係圖;The first figure is a relative positional relationship between the probe set and the die when there is no offset of the plurality of crystal grains;

第二圖係為晶粒產生偏移時,探針組與晶粒間之相對位置關係圖;The second figure is a relative positional relationship between the probe set and the crystal grains when the crystal grains are shifted;

第三圖係為點測機多晶粒測試程序之步驟圖;以及The third diagram is a step diagram of the multi-die test procedure of the spot tester;

第四圖係為本發明多晶粒之點測機之結構圖。The fourth figure is a structural diagram of the multi-die spot measuring machine of the present invention.

S101-S105...點測機多晶粒測試程序步驟S101-S105. . . Dot tester multi-die test procedure

Claims (8)

一種多晶粒之測試方法,係供一點測機對複數個待測晶粒進行點測,該點測機係包含複數探針組,該測試方法係包括下列步驟:取得該複數個待測晶粒之一位置資料;根據該位置資料,當該些探針組之位置對應到該位置資料時,判斷該些待測晶粒未產生偏移,以該些探針組對未產生偏移之待測晶粒進行點測;以及根據該位置資料,當該些探針組之位置無法對應到該位置資料時,判斷該些待測晶粒產生偏移,並移動該些探針組與該些待測晶粒之至少一者,以該些探針組之至少一者對產生偏移之待測晶粒進行點測。 A multi-die test method is used for spot testing a plurality of test dies for a plurality of test dies, the test finder comprising a plurality of probe sets, the test method comprising the steps of: obtaining the plurality of crystals to be tested According to the position data, when the positions of the probe groups correspond to the position data, it is judged that the samples to be tested are not offset, and the pair of probes are not offset. The die to be tested is subjected to spot measurement; and according to the position data, when the positions of the probe sets cannot correspond to the position data, determining that the die to be tested is offset, and moving the probe sets and the At least one of the to-be-measured dies is spot-measured with at least one of the sets of probes to produce an offset die. 如申請專利範圍第1項所述之測試方法,其中根據該位置資料以該些探針組,以該些探針組對未產生偏移之待測晶粒進行點測包括:控制該些探針組處於一出針狀態,藉以對未產生偏移之待測晶粒進行點測。 The test method of claim 1, wherein the spotting of the unmeasured die with the probe set according to the location data includes: controlling the probe The needle set is in a needle-out state, thereby performing spot measurement on the die to be tested without offset. 如申請專利範圍第2項所述之測試方法,其中根據該位置資料移動該些探針組與該些待測晶粒之至少一者,以該些探針組之至少一者對產生偏移之待測晶粒進行點測包括:移動該些探針組與該些待測晶粒之至少一者,並控制該些探針組之至少一者處於該出針狀態,藉以對產生偏 移之待測晶粒進行點測。 The test method of claim 2, wherein the at least one of the probe sets and the at least one of the test dies are moved according to the position data, and at least one of the probe sets is offset. The spot measurement of the die to be tested includes: moving at least one of the probe sets and the die to be tested, and controlling at least one of the probe sets to be in the exit pin state, thereby generating a bias Move the die to be tested for spot measurement. 如申請專利範圍第2項所述之測試方法,其中控制該些探針組處於該出針狀態係控制該探針組朝該些待測晶粒移動使該些探針組處於該出針狀態。 The test method of claim 2, wherein controlling the probe groups in the needle-out state controls the probe group to move toward the die to be tested to cause the probe groups to be in the needle-out state. . 一種多晶粒之點測機,係用以同時測試複數個待測晶粒,該點測機包含:一檢測平台,係用以承載該些待測晶粒;複數探針組;複數個收針模組,係分別連結於該些探針組,以控制該些探針組之至少一者相對於該些待測晶粒垂直移動處於一出針狀態或一收針狀態;一掃描模組,係用以對該些待測晶粒進行掃描,以取得一位置資料;以及一控制模組,係用以根據該位置資料控制該些探針組與該檢測平台之至少一者進行上下作動與平面位移;其中,當該些探針組之位置對應到該位置資料時,該控制模組判斷該些待測晶粒未產生偏移,並以該些探針組對未產生偏移之待測晶粒進行點測;當該些探針組之位置無法對應到該位置資料時,該控制模組判斷該些待測晶粒產生偏移,並根據該位置資料移動該些探針組與該些待測晶粒之至少一者,以對產生偏移之待測晶粒進行點測。 A multi-die spot measuring machine is used for simultaneously testing a plurality of die to be tested, the spot measuring machine comprises: a detecting platform for carrying the to-be-tested crystal grains; a plurality of probe sets; a plurality of receiving The needle module is respectively connected to the probe sets to control at least one of the probe sets to be in a needle-out state or a needle-retracting state relative to the vertical movement of the die to be tested; And the control module is configured to control the at least one of the probe sets and the detection platform to perform an up and down operation according to the location data. And a plane displacement; wherein, when the positions of the probe groups correspond to the position data, the control module determines that the die to be tested does not generate an offset, and the probe pairs are not offset The die to be tested is spot-measured; when the positions of the probe sets cannot correspond to the location data, the control module determines that the die to be measured is offset, and moves the probe sets according to the location data. And at least one of the crystals to be tested to be offset Crystal grains measured point. 如申請專利範圍第5項所述之點測機,其中該收針模組係包含一音圈馬達。 The spot measuring machine of claim 5, wherein the pinching module comprises a voice coil motor. 如申請專利範圍第5項所述之點測機,其中該收針模組 係包含一電磁閥。 The spot measuring machine according to claim 5, wherein the needle receiving module It contains a solenoid valve. 如申請專利範圍第5項所述之點測機,其中該收針模組係控制該探針組之至少一者朝該些待測晶粒之方向移動使該些探針組處於該出針狀態,以及控制該探針組之至少一者朝該些待測晶粒之反方向移動使該些探針組處於該收針狀態。The spot measuring machine of claim 5, wherein the pinching module controls at least one of the probe sets to move toward the die to be tested to cause the probe sets to be in the needle The state, and controlling at least one of the probe sets to move in opposite directions of the die to be tested, causes the probe sets to be in the pinning state.
TW100133749A 2011-09-20 2011-09-20 Test method of multi - grain and its point measuring machine TWI450350B (en)

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