TWI623761B - Chip probing apparatus and chip probing method - Google Patents

Abstract

A wafer spotting device is adapted to spot a plurality of components to be tested, including a carrier, a light collecting device, a first probe set, and at least a second probe set. The carrying platform is used to carry and move the component to be tested. The light-receiving device is disposed toward the carrying platform for collecting the light emitted by the component to be tested. The first probe set is located above the carrying platform for spotting the component to be tested. At least one second probe set is located above the carrying platform, wherein at least one second probe set is vertically movable toward or away from the loading platform for spotting the component to be tested. A wafer spotting method is also provided.

Description

Wafer spot measuring device and wafer spot measuring method

The invention relates to a spot measuring device and method, and in particular to a wafer spot measuring device and a wafer spot measuring method.

In order to ensure the quality of the light-emitting diode wafer, the wafer is usually optically detected after the wafer is fabricated. Specifically, the spot probe is used to contact the electrode pads on the crystallized chip one by one, so that after the wafer receives the current applied by the probe, the current passes through the wafer and the emitted light is measured. Characteristics (such as wavelength, luminous intensity, color, etc.) to ensure the quality of the wafer.

In order to increase the speed of detection, the spotting device gradually develops toward the spot measurement of the multi-wafer. During the spotting process, the light-emitting diode wafer is attached to the expansion film to perform a crystal expansion step, and when the wafers to be detected on the surface of the expansion film are spaced apart from each other by a predetermined distance, a partial wafer bias may be caused. Move the preset position. If the wafer that is discarded or skipped at the offset preset position is not tested, this is not cost effective for high-end products.

The invention provides a wafer spotting device capable of performing spot measurement on a plurality of components to be tested which are not offset and offset, and can improve the spot rate.

The invention provides a wafer spotting method using the wafer spotting device as described above, which can perform spot measurement on a plurality of untested and biased components to be tested, and can improve the spotting rate.

The invention provides a wafer spotting method, which can perform spot measurement on a plurality of untested and biased components to be tested, and can improve the spot rate.

The wafer spotting device of the present invention is suitable for spotting a plurality of components to be tested. The wafer spotting device includes a carrier, a light collecting device, a first probe set, and at least a second probe set. The carrying platform is used to carry and move the components to be tested. The light-receiving device is disposed toward the carrying platform for collecting and measuring the light emitted by the components to be tested. The first probe set is located above the carrying platform for spotting the components to be tested. At least one second probe set is located above the carrier. At least one second probe set can be moved closer to or away from the carrier table for spotting the components to be tested.

The present invention uses the wafer spotting method of the wafer spotting device as described above, which is suitable for spot-measuring a plurality of components to be tested, wherein the components to be tested are divided into a plurality of groups, and the group of the components to be tested without the offset is included. The group is an unbiased group, and the group including the biased elements to be tested is a biased group. The wafer spotting method includes the following steps. Corresponding to the position of the unbiased group, moving at least one second probe set such that the first probe set and the at least one second probe set are on a working plane, and via the first probe set and at least A second probe set performs a spot test. Corresponding to the position of the bias group, moving at least one second probe group such that the first probe group and the at least one second probe group are not located on the working plane, and the point is performed via the first probe group Measurement.

The wafer spotting method of the present invention is suitable for spotting the components to be tested after obtaining the position data of one of the plurality of components to be tested by a wafer spotting device. The positional data includes the positions of the components to be tested that are not biased, and the positions of the components to be tested that are biased. The components to be tested are divided into a plurality of groups, and the group of the components to be tested that do not include the offset is an unbiased group, and the group of the components to be tested that have the offset is a group of offsets. The wafer spotting device includes a carrier that carries and moves the components to be tested, a first probe set above the carrier, and at least a second probe set. The wafer spotting method includes the following steps. Locating the elements to be tested of the unbiased group via the first probe set and the at least one second probe set, moving away from the at least one second probe set relative to the carrier, and moving away from the carrier at least After a second probe set, the components to be tested having the bias group are spotted via the first probe set.

Based on the above, the wafer spotting device and the wafer spotting method of the embodiment of the present invention can not only simultaneously measure a plurality of components to be tested, but also the spot measuring device can spot the component to be tested with a deviation, without stopping the spot measurement. The program or skipping the biased component to be tested results in a long detection time or wasted cost. Therefore, the wafer spotting apparatus and the wafer spotting method of the embodiments of the present invention can achieve a more efficient test than the conventional spotting technique.

The above described features and advantages of the invention will be apparent from the following description.

Referring to FIGS. 1A, 1B, 2A, 2B and 3, the wafer spotting apparatus 100 of the embodiment of the present invention is adapted to spot a plurality of components to be tested 50. These devices to be tested 50 are, for example, a crystallized light-emitting diode chip. The wafer spotting device 100 includes a carrier 110, a light collecting device 120, a first probe set 130, and at least a second probe set 140. The loading platform 110 is configured to carry and move the components to be tested 50. For example, the loading platform 110 can move (translate or rotate) the two components to be tested 50 in a two-dimensional plane perpendicular to the direction Z, or the loading platform 110 can be in the direction Z. The elements to be tested 50 are moved closer to or away from the first probe set 130 and the second probe set 140 in a plane. The light collecting means 120 is disposed toward the stage 110 to collect the light L emitted by the elements to be tested 50. The light receiving device 120 is, for example, an integrating sphere. In the present embodiment, the light-receiving axis AX of the light-receiving device 120 is, for example, located on the centroid connection line CL of two adjacent elements to be tested 50. In other embodiments, the light receiving axis AX of the light collecting device 120 may not be located on the centroid connecting line CL of the two adjacent elements to be tested 50. That is, the probe tip 130a of the first probe set 130 and the probe tip 140a of the second probe set 140 are located on the same working plane P. Furthermore, the probe tip 130a of the first probe set 130 and the probe tip 140a of the second probe set 140 are located in the projection area 120a of the light-receiving port of the light-receiving device 120 on the working plane P.

In this embodiment, the components to be tested 50 are divided into a plurality of groups, for example, the group G1, and the two components to be tested 50 in the group G1 may be located on the receiving platform 110 at the light collecting port of the light collecting device 120. Within the projection area 120b. In another embodiment, the wafer spotting apparatus 100 includes, for example, a first probe set 130 and two second probe sets 140. Referring to FIG. 2B, the group G1 has three components to be tested 50 corresponding to the number of probe sets, and the components to be tested 50 may be partially located on the receiving port 110 of the light collecting device 120. Within the projection area 120b. For example, eighty percent of the total area of the three elements to be tested 50 are located in the projection area 120b of the light collecting device 120 on the receiving surface 110.

In addition, referring again to FIG. 1A and FIG. 1B , the first probe set 130 is located above the carrying platform 110 for spotting the components to be tested 50 . The second probe set 140 is located above the carrier 110 and is disposed parallel to the first probe set 130. The relative position of the first probe set 130 and the light receiving device 120 is fixed. The second probe set 140 can move in a direction Z that is perpendicular to the stage 110. For example, the second probe set 140 can be moved toward or away from the components to be tested 50 from the components to be tested 50 for spotting or not measuring the components to be tested 50. Further, the portion of the second probe set 140 that is moved away from the elements to be tested 50 can cause the probe of the second probe set 140 to have a higher height on the Z axis than the probe of the first probe set 130. The height on the Z axis. That is to say, the first probe set 130 and the second probe set 140 are not located on the same working plane. For example, the distance between the plane where the probe tip 140a of the second probe set 140 is located and the plane where the carrier 110 is located is greater than the working plane P where the probe tip 130a of the first probe set 130 is located and the plane where the carrier 110 is located. The distance of the plane. Furthermore, when the second probe set 140 is moved closer to the device under test 50, the height of the probe of the second probe set 140 on the Z axis and the probe of the first probe set 130 are on the Z axis. The heights above are roughly the same. That is, the probe tip 140a of the second probe set 140 and the probe tip 130a of the first probe set 130 are, for example, located on the same working plane P.

It should be noted that although FIG. 1A only shows a second probe set 140, it can be understood that in other embodiments of the present invention, the chip spotting device can be configured with multiple second probes according to actual needs. A set of needles for simultaneously or separately measuring the component to be tested. Further, in an embodiment having a plurality of second probe sets, the second set of probes may be simultaneously moved in a direction Z perpendicular to the stage 110 or at a different time along the plane perpendicular to the stage 110. The direction Z moves, and the moving module (not shown) for controlling the movement of the second probe group in the direction Z can be set according to actual conditions.

In the embodiment, the wafer spotting device 100 further includes a control module 150. The control module 150 is coupled to the carrier 110, the first probe set 130, and the second probe set 140. The control module 150 controls the carrier 110 according to a position data of the components to be tested 50 to move the components to be tested 50, and controls the first probe set 130 and the second probe set 140 to spot the components to be tested 50. The positional data includes the positions of the elements to be tested 52 that are not biased, and the positions of the elements 54 to be tested that are biased. That is, the control module 150 controls the carrier 110 according to the position data to move the components to be tested 50, and controls the first probe set 130 and/or the second probe set 140 to spot the unmeasured components. 52. For example, the components to be tested 50 may be scanned by a scanning module, such as a camera module, to obtain position data of the components to be tested 50 (such as a position image or a position coordinate, etc.), taking a position image as an example. The control module 150 determines whether the components to be tested 50 are offset according to the position image, and determines the centroid position C1 of the components to be tested 50 according to the position image. The control module 150 determines whether each of the to-be-tested components 50 is unbiased by determining whether the centroid position C1 of each of the to-be-tested components 50 is offset by more than half of the electrode pad size W of the corresponding to-be-tested component 50. And the components to be tested 54 which are biased are recorded in the position data. In detail, referring to FIG. 3, the centroid position C1 of the unbiased element to be tested 52 coincides with its preset centroid position C1. Therefore, the first probe set 130 and the second probe set 140 can correspond to the electrode pads of the unbiased component to be tested 52 and perform spotting. Specifically, the first probe set 130 and the second probe set 140 apply a current to the unbiased component to be tested 52 for emitting the unbiased component under test 52 to be received by the light receiving device 120. Further, optical characteristics such as wavelength, luminous intensity, color, and the like of the unbiased element to be tested 52 are measured and calculated to confirm the quality of the elements 50 to be tested.

Referring to FIG. 1A and FIG. 3 again, the components to be tested 50 are divided into a plurality of groups G1, G2, and G3, and the group of components to be tested 54 that do not include offsets is an unbiased group, such as group G1. And G3, the group of the components to be tested 54 having the offset is a biased group, such as group G2. The control module 150 controls the carrier 110 to move the components to be tested 50, and controls the first probe set 130 and the second probe set 140 to spot the unbiased components to be tested 52 of the unbiased group G1. The control module 150 controls the second probe set 140 to move away from the carrier 110, and controls the first probe set 130 to spot the unbiased component to be tested 52 in the biased group G2 and the biased to be tested. Element 54, further, the second probe set 140 is moved away from the carrier 110 such that the probe tip of the second probe set 140 has a higher height on the Z-axis than the probe tip of the first probe set 130. The height on the shaft. After the first probe set 130 measures the unbiased device under test 52 of the offset group G2 and the biased component 54 to be tested, the control module 150 controls the second probe set 140 to move closer to the carrier. 110, and control the first probe set 130 and the second probe set 140 to spot the unbiased test elements 52 of the unbiased group G3.

Further, there is a distance D between the offset centroid position C2 of the biased component 54 to be measured and its preset centroid position C1. For example, the distance D is greater than half the electrode pad (Pad) size W of each of the elements to be tested 50. In an embodiment, when the probe tip of the first probe set 130 and/or the second probe set 140 exceeds the electrode pad position of the device under test 50, that is, the first probe set 130 and/or When the probe tip of the second probe set 140 cannot correspond to the electrode pads of the components to be tested 50, the components to be tested are the biased components 54 to be tested. If the spot test is continued according to the above procedure at this time, the first probe set 130 or the second probe set 140 located above the spot measurement position of the biased test element 54 cannot accurately bias the probe to be biased. Above the electrode pads of the device under test 54. In addition, for the biased component 54 to be tested, the light-shielding angle of the probe may be different from that of the unbiased component to be tested 52, thereby causing the point measurement result to lose reference. Therefore, before the control module 150 controls the first probe set 130 to spot the biased component 54 to be tested, the control module 150 controls the second probe set 140 to move away from the components to be tested 50 to avoid the second probe. The needle set 140 interferes with the first probe set 130 for spot testing. In addition, after the control module 150 controls the first probe set 130 and the second probe set 140 to measure all the unbiased components to be tested 52, the control module 150 controls the first probe set 130 to have a spot test. Offset component 54 to be measured.

It should be noted that the wafer spotting method of this embodiment may be to perform wafer spotting using the wafer spotting device as described above, or may perform wafer spotting using other suitable wafer spotting devices. Referring to FIG. 4 and FIG. 5, first, the position data of these components to be tested 50 are obtained. According to whether the centroid position C1 of each of the components to be tested 50 in the positional data is offset by more than half of the electrode pad size W of the corresponding component to be tested 50, the component to be tested 50 is determined to be unbiased and offset. The components to be tested are recorded in the location data. If the components to be tested 52 are all unbiased, in step S101, the unbiased bits of the unbiased groups G1, G2, and G3 are sequentially inspected via the first probe set 130 and the second probe set 140. The component to be tested 52.

Referring to FIG. 4 and FIG. 6A to FIG. 6D, the position data of the components to be tested 50 are obtained, and the components to be tested 50 are divided into groups G1, G2, and G3, and the group of the components to be tested 54 that do not include the offset is included. G1 and G3 are unbiased groups, and group G2 including the component 54 to be tested with offset is a bias group. First, the spot group G1 is moved, corresponding to the position of the unbiased group G1, and the second probe set 140 is moved so that the first probe set 130 and the second probe set 140 are located on the same working plane, and moved. The stage 110 is placed such that the first probe set 130 and the second probe set 140 positioned on the working plane contact the unbiased elements to be tested 52. In detail, in step S101, the unbiased elements to be tested 52 of the unbiased group G1 are spotted via the first probe set 130 and the second probe set 140. Next, the spot group G2, corresponding to the position of the offset group G2, moves the second probe set 140 such that the first probe set 130 and the second probe set 140 are not located on the same work plane. The carrier 110 is moved such that the first probe set 130 contacts the biased components 54 to be tested. Specifically, in step 102, the second probe set 140 is moved relative to the carrier 110. Next, in step 103, the unbiased device under test 52 having the offset group G2 and the biased component 54 to be tested are spotted via the first probe set 130.

In this embodiment, the group G3 can also be spotted. In detail, after the first probe set 130 is spotted with the unbiased test element 52 of the offset group G2 and the biased test element 54 , the second probe is moved relative to the carrier 110 The group 140 measures the unbiased elements to be tested 52 of the unbiased group G3 via the first probe set 130 and the second probe set 140.

In an embodiment of the present invention, the wafer spotting method may be after the first test probe group 130 and the second probe set 140 are spotted through the undetected group of the test elements 52, and then passed through the first probe set 130 and the second probe set 140. A probe set 130 measures the biased component 54 to be tested and/or the unbiased component 52 in a biased group. The invention is not limited thereto.

In summary, in the wafer spotting device and the wafer spotting method of the present invention, not only a plurality of components to be tested can be spot-measured at the same time, but also a component to be tested having a biased position can be spotted. The wafer spotting device of the present invention does not need to stop the spot test procedure or skip the biased component to be tested, resulting in excessive detection time or wasted cost. Therefore, the wafer spotting apparatus and wafer spotting method of the present invention can achieve more efficient detection.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

50: a plurality of components to be tested 52: unbiased component to be tested 54: component to be tested 100 with offset: wafer spotting device 110: carrier 120: light collecting device 120a, 120b: projection region 130: first Probe set 140: second probe set 130a, 140a: probe tip 150: control module AX: light receiving axis C1: centroid position C2: offset centroid position CL: centroid connection D: distance G1 , G2, G3: group L: light P: working plane W: electrode pad size Z: direction S101, S102, S103, S104, S105, S106: steps

1A is a schematic diagram of a wafer spotting device in accordance with an embodiment of the invention. 1B is a schematic view showing a relative position of a projection area of a light-receiving port of a light-receiving device and a probe tip on a working plane according to another embodiment of the present invention. 2A is a schematic view showing a relative position of a projection area of a light-receiving device to a stage of a light-receiving device and an element to be tested according to an embodiment of the invention. 2B is a schematic view showing a relative position of a projection area of a light-receiving device to a stage of a light-receiving device and an element to be tested according to another embodiment of the present invention. 3 is a schematic diagram of an element to be tested having a bias in accordance with an embodiment of the present invention. 4 is a flow chart of a method of wafer spotting according to an embodiment of the invention. FIG. 5 is a schematic diagram of a wafer spotting method according to an embodiment of the invention. 6A-6D are schematic views of a wafer spotting method according to another embodiment of the present invention.

Claims (18)

A wafer spotting device is suitable for spotting a plurality of components to be tested, comprising: a carrying platform for carrying and moving the components to be tested; a light collecting device disposed toward the loading platform for collecting the spotting The light emitted by the component to be tested; a first probe set located above the carrier for spotting the components to be tested; and at least a second probe set above the carrier, wherein the at least one a second probe set can be moved toward or away from the loading platform vertically for spotting the components to be tested, when the probe tip of the first probe set and the at least one second probe set When the probe tip is located on the same working plane, the probe tip of the first probe set and the probe tip of the at least one second probe set are located on the working plane of the light collecting port of the light collecting device within the area. The wafer spotting device of claim 1, further comprising: a control module coupled to the carrier, the first probe set and the at least one second probe set, wherein the control mode The group controls the loading platform according to the position data of the components to be tested to move the components to be tested, and controls the first probe group and the at least one second probe group to spot the components to be tested, wherein The location data includes the locations of the untested components to be tested and the locations of the components to be tested that are biased. The wafer spotting device of claim 2, wherein the control module controls the carrier to move the components to be tested according to the location data, and controls The first probe set and/or the at least one second probe set are used to spot the unmeasured components to be tested. The wafer spotting device of claim 2, wherein the control module controls the at least one before the control module controls the first probe set to spot the biased components to be tested. The second probe set is moved away from the elements to be tested. The wafer spotting device of claim 2, wherein after the control module controls the first probe set and the at least one second probe set to spot all the unbiased components to be tested The control module controls the first probe set to spot the components to be tested that are biased. The wafer spotting device of claim 1, wherein when the probe tip of the first probe set and the probe tip of the at least one second probe set are not in the same working plane, The distance between the plane of the probe tip of the at least one second probe set and the plane of the carrier is greater than the distance between the plane of the probe tip of the first probe set and the plane of the carrier. The wafer spotting device of claim 1, wherein a distance between a biased centroid position of each of the components to be tested and a predetermined centroid position of the corresponding component to be tested is greater than the corresponding one. The electrode pad of the device to be tested is half the size of the electrode pad. The wafer spotting device of claim 1, wherein the light collecting axis of the light collecting device is located on a line connecting the centroids of the adjacent two of the elements to be tested. The wafer spotting device of claim 2, wherein the components to be tested are divided into a plurality of groups, and the group not including the biased component to be tested is an unbiased group, including The group of the component to be tested that is biased is a biased group. The control module controls the loading station to move the to-be-tested components, and controls the first probe set and the at least one second probe set to spot the to-be-measured components of the unbiased group, the control The module controls the at least one second probe set to move away from the carrier, and controls the first probe set to spot the plurality of components to be tested of the biased group. The wafer spotting device of claim 9, wherein the components to be tested in each group are located in a projection area of the light collecting port of the light collecting device on the carrying platform. The wafer spotting device of claim 9, wherein 80% of the total area of the components to be tested in each group is located on the receiving port of the light collecting device. Within a projection area. The wafer spotting device of claim 11, wherein the control module controls the at least one second probe after the first probe set taps the component to be tested with the bias group The needle set moves closer to the carrying platform, and controls the first probe set and the at least one second probe set to spot the test elements of the unbiased group. The wafer spotting device of claim 1, wherein the relative position of the first probe set and the light receiving device is fixed. A wafer spotting method using the wafer spotting device according to claim 1, which is suitable for spotting a plurality of components to be tested, wherein the components to be tested are divided into a plurality of groups, and do not include offset The group of the device to be tested is an unbiased group, and the group including the offset component to be tested is a biased group, and the wafer spotting method includes the following steps: corresponding to the unbiased group Positioning the group, moving the at least one second probe set to Positioning the first probe set and the at least one second probe on a working plane, and performing spotting via the first probe set and the at least one second probe set; and corresponding to the bias Positioning the bit group, moving the at least one second probe set such that the first probe set and the at least one second probe set are not located on the working plane, and are performed via the first probe set Spot test. The wafer spotting method of claim 14, further comprising: corresponding to the position of the unbiased group, moving the carrying platform to enable the first probe set located on the working plane and The at least one second probe set contacts the components to be tested. The wafer spotting method of claim 14, further comprising: corresponding to the position of the biased group, moving the carrying platform to contact the first probe set located on the working plane The components to be tested. A method for spotting a wafer, wherein after a chip spotting device obtains position data of one of the plurality of components to be tested, the component to be tested is spotted, wherein the location data includes positions of the components to be tested that are not biased. And the positions of the components to be tested that are biased, the components to be tested are divided into a plurality of groups, and the group of the components to be tested that do not include the offset is an unbiased group, including the offset The group of components to be tested is a group having a bias, the wafer spotting device includes a carrier that carries and moves the components to be tested, a first probe group located above the carrier, and at least one a second probe set, the method for measuring a wafer includes the following steps: spotting the components to be tested of the unbiased group via the first probe set and the at least one second probe set; Moving the at least one second probe set relative to the carrier; and, after moving away from the at least one second probe set relative to the carrier, spotting the biased group via the first probe set The components to be tested. The wafer spotting method of claim 17, further comprising: after the first probe set taps the component to be tested of the biased group, moving the at least relative to the carrier a second probe set, wherein the test elements of the unbiased group are spotted through the first probe set and the at least one second probe set.