TW201939647A - Substrate processing device - Google Patents
Substrate processing device Download PDFInfo
- Publication number
- TW201939647A TW201939647A TW108109185A TW108109185A TW201939647A TW 201939647 A TW201939647 A TW 201939647A TW 108109185 A TW108109185 A TW 108109185A TW 108109185 A TW108109185 A TW 108109185A TW 201939647 A TW201939647 A TW 201939647A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- processing tank
- processing
- substrates
- plate
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 238
- 239000000758 substrate Substances 0.000 title claims abstract description 172
- 239000007788 liquid Substances 0.000 claims abstract description 132
- 230000000630 rising effect Effects 0.000 description 9
- 238000004088 simulation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
本發明是有關於一種利用處理液對半導體晶圓、液晶顯示器用基板、電漿顯示器用基板、有機電致發光（Electroluminescence，EL）用基板、場發射顯示器（Field Emission Display，FED）用基板、光顯示器用基板、磁碟用基板、磁光碟用基板、光罩用基板、太陽電池用基板等各種基板（以下，僅稱為基板）進行處理的基板處理裝置。The present invention relates to a semiconductor wafer, a substrate for a liquid crystal display, a substrate for a plasma display, a substrate for organic electroluminescence (EL), a substrate for a field emission display (FED), A substrate processing apparatus that processes various substrates (hereinafter, simply referred to as a substrate) such as a substrate for an optical display, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, and a substrate for a solar cell.
先前，作為此種裝置，有包括儲存處理液並收容多片基板來進行處理的處理槽及配置於處理槽內的底部的液流分散構件，使基板浸漬於處理液中來進行處理者（例如，參照專利文獻1）。Previously, such devices include a processing tank that stores a processing liquid and stores a plurality of substrates for processing, and a liquid flow dispersing member disposed at the bottom of the processing tank, and immersing the substrate in the processing liquid to perform processing (for example, See Patent Document 1).
該裝置所包括的液流分散構件使處理槽內的處理液的流動分散成面向處理槽的中央的底面側的流動及朝面向處理槽的中央的斜上方的流動。藉此，可緩和基板面附近的處理液的流動的差異，因此可提升處理的面內均勻性。
[現有技術文獻]
[專利文獻]The liquid flow dispersing member included in this device disperses the flow of the processing liquid in the processing tank into a flow facing the bottom surface side of the center of the processing tank and a flow obliquely upward facing the center of the processing tank. Thereby, the difference in the flow of the processing liquid near the substrate surface can be alleviated, so that the in-plane uniformity of the processing can be improved.
[Prior Art Literature]
[Patent Literature]
[專利文獻1]日本專利特開2017-130483號公報（圖1及圖2）
[發明所欲解決之課題][Patent Document 1] Japanese Patent Laid-Open No. 2017-130483 (Figures 1 and 2)
[Problems to be Solved by the Invention]
但是，於具有此種結構的習知例的情況下，存在如下的問題。
即，先前的裝置雖然可藉由液流分散構件來提升處理的面內均勻性，但最近以面內均勻性的進一步的提升為目標，期望進一步緩和基板面附近的處理液的流動的差異。即，期望一種形成基板面內的速度差少的整流的技術。However, in the case of a conventional example having such a structure, there are the following problems.
That is, although the conventional apparatus can improve the in-plane uniformity of the processing by the liquid flow dispersing member, recently, with the goal of further improving the in-plane uniformity, it is desired to further reduce the difference in the flow of the processing liquid near the substrate surface. That is, a technique for forming a rectifier with a small speed difference in the substrate plane is desired.
本發明是鑒於此種情況而成者，其目的在於提供一種可於基板面內形成速度差少的整流的基板處理裝置。
[解決課題之手段]The present invention has been made in view of such a situation, and an object thereof is to provide a substrate processing apparatus capable of forming a rectifier with a small speed difference in the substrate surface.
[Means for solving problems]
為了達成此種目的，本發明採用如下的結構。
即，技術方案1中記載的發明是使多片基板浸漬於處理槽中所儲存的處理液中來進行處理的基板處理裝置，其包括：升降機，於所述處理槽內在規定的排列方向上支持多片基板；一對噴出管，分別配置於所述處理槽的下部、且自所述基板的排列方向觀察分別配置於兩側，朝沿著所述處理槽的底面的方向、且面向所述處理槽的中央的方向供給處理液；以及狹縫板，配置於由所述升降機支持的基板的下方與所述處理槽的底面之間，形成有多個使長軸朝向所述多片基板的排列方向的狹縫，所述多個狹縫以相互平行的位置關係來形成，且當自所述基板的排列方向觀察所述狹縫板時，關於所述處理槽的中央區域與比所述中央區域更位於所述一對噴出管側的外區域的兩個區域中的所述多個狹縫，所述外區域中的狹縫的寬度比所述中央區域中的狹縫的寬度大。To achieve such an object, the present invention adopts the following structure.
That is, the invention described in claim 1 is a substrate processing apparatus for processing a plurality of substrates by immersing them in a processing solution stored in a processing tank, and includes an elevator in the processing tank in a predetermined arrangement direction. Supports multiple substrates; a pair of ejection tubes are respectively arranged at the lower part of the processing tank, and are arranged on both sides as viewed from the arrangement direction of the substrates, facing the direction along the bottom surface of the processing tank, and facing all A processing liquid is supplied in a center direction of the processing tank; and a slit plate is disposed between a lower surface of the substrate supported by the lifter and a bottom surface of the processing tank, and a plurality of substrates are formed with long axes facing the plurality of substrates The plurality of slits are formed in a parallel positional relationship with each other, and when the slit plate is viewed from the arrangement direction of the substrate, the central region of the processing tank The central region is further located in the plurality of slits in two regions of the outer region on the side of the pair of ejection tubes, and the width of the slit in the outer region is larger than the width of the slit in the central region. .
[作用・效果]根據技術方案1中記載的發明，在由升降機支持的基板的下方與處理槽的底面之間包括狹縫板。形成於該狹縫板上的多個狹縫於外區域中的寬度比自基板的排列方向觀察的中央區域的寬度大。因此，自一對噴出管供給，並於中央區域中沿著基板面上升的處理液的強液流於穿過狹縫板而朝基板側上升時，其勢頭被減弱。另外，於處理液的液流比強液流上升的中央區域弱的外區域中狹縫的寬度變大，因此處理液的液流的勢頭不怎麼被減弱。因此，可緩和基板面附近的處理液的流動的差異，可於基板面內形成速度差少的整流。[Action and Effect] According to the invention described in claim 1, a slit plate is included between the lower side of the substrate supported by the elevator and the bottom surface of the processing tank. The width of the plurality of slits formed in the slit plate in the outer region is larger than the width of the central region as viewed from the arrangement direction of the substrate. Therefore, when the strong liquid of the processing liquid supplied from the pair of ejection tubes and rising along the substrate surface in the central region flows through the slit plate and rises toward the substrate side, its momentum is weakened. In addition, the width of the slit is larger in the outer region where the liquid flow of the processing liquid is weaker than the central area where the strong liquid flow rises, so the momentum of the liquid flow of the processing liquid is not weakened much. Therefore, the difference in the flow of the processing liquid near the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
另外，於本發明中，較佳為當自所述基板的排列方向觀察所述狹縫板時，所述外區域被劃分成比所述中央區域更位於所述一對噴出管側的第1外區域以及位於所述中央區域與所述第1外區域之間的第2外區域，且所述多個狹縫的寬度按所述中央區域、所述第2外區域、所述第1外區域的順序變大（技術方案2）。In addition, in the present invention, when the slit plate is viewed from the arrangement direction of the substrate, the outer region is preferably divided into the first region located on the side of the pair of ejection tubes than the central region. An outer region and a second outer region between the central region and the first outer region, and the widths of the plurality of slits are in accordance with the central region, the second outer region, and the first outer region The order of the regions becomes larger (Technical Solution 2).
狹縫的寬度自中央區域起按第2外區域、第1外區域的順序變大，因此可對應於處理液的液流的勢頭精細地緩和差異。因此，可進一步緩和基板面附近的處理液的流動的差異，可於基板面內形成速度差少的整流。Since the width of the slit becomes larger in the order of the second outer region and the first outer region from the center region, the difference in the momentum of the flow of the treatment liquid can be finely mitigated. Therefore, the difference in the flow of the processing liquid near the substrate surface can be further alleviated, and rectification with a small speed difference can be formed in the substrate surface.
另外，技術方案3中記載的發明是使多片基板浸漬於處理槽中所儲存的處理液中來進行處理的基板處理裝置，其包括：升降機，於所述處理槽內在規定的排列方向上支持多片基板；一對噴出管，分別配置於所述處理槽的下部、且自所述基板的排列方向觀察分別配置於兩側，朝沿著所述處理槽的底面的方向、且面向所述處理槽的中央的方向供給處理液；狹縫板，配置於由所述升降機支持的基板的下方與所述處理槽的底面之間，形成有多個使長軸朝向所述多片基板的排列方向的狹縫，所述多個狹縫以相互平行的位置關係來形成；以及遮板（louver），設置於所述狹縫板上，包括多個沿著所述狹縫的長軸來配置長邊的板狀構件，所述多個板狀構件以相互平行的位置關係朝向所述處理槽的底面側而立設。The invention described in claim 3 is a substrate processing apparatus for processing a plurality of substrates by immersing them in a processing liquid stored in a processing tank, and includes an elevator in the processing tank in a predetermined arrangement direction. Supports multiple substrates; a pair of ejection tubes are respectively arranged at the lower part of the processing tank, and are arranged on both sides as viewed from the arrangement direction of the substrates, facing the direction along the bottom surface of the processing tank, and facing all A processing liquid is supplied in a center direction of the processing tank; a slit plate is disposed between a lower surface of the substrate supported by the lifter and a bottom surface of the processing tank, and a plurality of The slits in the arrangement direction, the plurality of slits being formed in a positional relationship parallel to each other; and a louver, which is provided on the slit plate and includes a plurality of along the long axis of the slit Long-side plate-like members are arranged, and the plurality of plate-like members are erected toward the bottom surface side of the processing tank in a positional relationship parallel to each other.
[作用・效果]根據技術方案3中記載的發明，在由升降機支持的基板的下方與處理槽的底面之間包括狹縫板。進而，於狹縫板上設置有朝向底面而立設的遮板。自一對噴出管供給的處理液的勢頭由遮板減弱，於中央區域中沿著基板面上升的處理液的強液流於穿過狹縫板而朝基板側上升時，其勢頭被進一步減弱。因此，可緩和基板面附近的處理液的流動的差異，可於基板面內形成速度差少的整流。[Action and Effect] According to the invention described in claim 3, a slit plate is included between the lower side of the substrate supported by the elevator and the bottom surface of the processing tank. Furthermore, a slit plate is provided on the slit plate so as to face the bottom surface. The momentum of the processing liquid supplied from the pair of ejection pipes is weakened by the shutter. When the strong liquid of the processing liquid rising along the substrate surface in the central region flows through the slit plate and rises toward the substrate side, its momentum is further weakened. . Therefore, the difference in the flow of the processing liquid near the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
另外，於本發明中，較佳為當自所述基板的排列方向觀察所述遮板時，所述多個板狀構件的下端面與所述處理槽的底面的距離自所述一對噴出管側朝向所述處理槽的中央依序變短（技術方案4）。In addition, in the present invention, it is preferable that when the shutter is viewed from the arrangement direction of the substrate, the distance between the lower end faces of the plurality of plate-like members and the bottom face of the processing tank is ejected from the pair The tube side becomes shorter in sequence toward the center of the processing tank (Technical Solution 4).
越是液流相互碰撞的中央，多個板狀構件的下端面與處理槽的底面的距離變得越短，因此可對應於處理液的液流的勢頭精細地緩和差異。因此，可進一步緩和基板面附近的處理液的流動的差異，可於基板面內形成速度差少的整流。The distance between the lower end surfaces of the plurality of plate-like members and the bottom surface of the processing tank becomes shorter as the centers where the liquid flows collide with each other. Therefore, the difference of the momentum of the liquid flow corresponding to the processing liquid can be finely mitigated. Therefore, the difference in the flow of the processing liquid near the substrate surface can be further alleviated, and rectification with a small speed difference can be formed in the substrate surface.
另外，技術方案5中記載的發明是使多片基板浸漬於處理槽中所儲存的處理液中來進行處理的基板處理裝置，其包括：升降機，於所述處理槽內在規定的排列方向上支持多片基板；一對噴出管，分別配置於所述處理槽的下部、且自所述基板的排列方向觀察分別配置於兩側，朝沿著所述處理槽的底面的方向、且面向所述處理槽的中央的方向供給處理液；以及遮板，配置於由所述升降機支持的基板的下方與所述處理槽的底面之間，包括多個將長邊配置於所述多片基板的排列方向上的板狀構件，所述多個板狀構件以相互平行的位置關係朝向所述處理槽的底面側而立設，且當自所述基板的排列方向觀察所述遮板時，所述多個板狀構件的下端面與所述處理槽的底面的距離自所述一對噴出管側朝向所述處理槽的中央依序變短。The invention described in claim 5 is a substrate processing apparatus for processing a plurality of substrates by immersing them in a processing liquid stored in a processing tank, and includes an elevator in the processing tank in a predetermined arrangement direction. Supports multiple substrates; a pair of ejection tubes are respectively arranged on the lower part of the processing tank, and are arranged on both sides as viewed from the arrangement direction of the substrates, facing the direction along the bottom surface of the processing tank and facing the A processing liquid is supplied in a center direction of the processing tank; and a shield plate is disposed between a bottom of the substrate supported by the lifter and a bottom surface of the processing tank, and includes a plurality of long sides disposed on the plurality of substrates. The plate-like members in the arrangement direction, the plurality of plate-like members are erected toward the bottom surface side of the processing tank in a positional relationship parallel to each other, and when the shutter is viewed from the arrangement direction of the substrate, the The distances between the lower end surfaces of the plurality of plate-like members and the bottom surface of the processing tank are sequentially shortened from the pair of discharge pipes toward the center of the processing tank.
[作用・效果]根據技術方案5中記載的發明，在由升降機支持的基板的下方與處理槽的底面之間包括遮板。當自基板的排列方向觀察時，遮板所包括的多個板狀構件的下端面與處理槽的底面的距離自一對噴出管側朝向處理槽的中央依序變短。因此，自一對噴出管供給的處理液的勢頭由遮板減弱，因此於中央區域中沿著基板面上升的液流的勢頭被減弱。因此，可緩和基板面附近的處理液的流動的差異，可於基板面內形成速度差少的整流。[Action and Effect] According to the invention described in claim 5, a shield plate is included between the lower side of the substrate supported by the elevator and the bottom surface of the processing tank. When viewed from the arrangement direction of the substrates, the distances between the lower end surfaces of the plurality of plate-like members included in the shutter and the bottom surface of the processing tank are sequentially shortened from the pair of discharge pipes toward the center of the processing tank. Therefore, the momentum of the processing liquid supplied from the pair of ejection pipes is weakened by the shutter, and the momentum of the liquid flow rising along the substrate surface in the central region is weakened. Therefore, the difference in the flow of the processing liquid near the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
另外，於本發明中，較佳為所述升降機包括保持基板的下緣中央部的中央部保持部以及自所述基板的排列方向觀察保持兩側的下緣的一對側部保持部，且自所述基板的排列方向觀察，所述多個板狀構件配置於所述中央部保持部與所述側部保持部之間（技術方案6）。In addition, in the present invention, it is preferable that the elevator includes a central portion holding portion that holds a lower edge center portion of the substrate, and a pair of side portion holding portions that hold the lower edges of both sides as viewed from the arrangement direction of the substrate, and When viewed from the arrangement direction of the substrates, the plurality of plate-like members are arranged between the central portion holding portion and the side portion holding portion (claim 6).
若於中央部保持部的位置上配置遮板的多個板狀構件，則處理液於某種程度上已分散，因此減弱處理液的流動的勢頭的效果變低。另一方面，若於比側部保持部更靠近一對噴出管的位置上配置遮板的多個板狀構件，則處理液由板狀構件與側部保持部阻斷，處理液的流動變得極差。因此，藉由將多個板狀構件配置在中央部保持部與側部保持部之間，可適宜地減弱處理液的液流。When the plurality of plate-like members of the shutter are disposed at the positions of the central portion holding portion, the treatment liquid is dispersed to some extent, and therefore the effect of reducing the momentum of the flow of the treatment liquid is reduced. On the other hand, if a plurality of plate-shaped members of a shutter are disposed closer to a pair of discharge pipes than the side holding portion, the processing liquid is blocked by the plate-shaped member and the side holding portion, and the flow of the processing liquid becomes changed. Very bad. Therefore, by disposing a plurality of plate-like members between the central portion holding portion and the side portion holding portion, the liquid flow of the processing liquid can be appropriately reduced.
另外，於本發明中，較佳為所述一對噴出管朝比所述處理槽的底面中央更靠近跟前的供給位置供給處理液（技術方案7）。In addition, in the present invention, it is preferable that the pair of discharge pipes supply the processing liquid to a supply position closer to the front than the center of the bottom surface of the processing tank (claim 7).
處理液的液流由處理槽的底面反射而分散，因此可抑制處理液的液流集中於中央附近。因此，可減弱於中央附近沿著基板面上升的處理液的強液流。
[發明的效果]Since the liquid flow of the processing liquid is reflected and dispersed by the bottom surface of the processing tank, it is possible to suppress the liquid flow of the processing liquid from being concentrated near the center. Therefore, the strong liquid flow of the processing liquid rising along the substrate surface near the center can be reduced.
[Effect of the invention]
根據本發明的基板處理裝置，在由升降機支持的基板的下方與處理槽的底面之間包括狹縫板。形成於該狹縫板上的多個狹縫於外區域中的寬度比自基板的排列方向觀察的中央區域的寬度大。因此，自一對噴出管供給，並於中央區域中沿著基板面上升的處理液的強液流於穿過狹縫板而朝基板側上升時，其勢頭被減弱。另外，於處理液的液流比強液流上升的中央區域弱的外區域中狹縫的寬度變大，因此處理液的液流的勢頭不怎麼被減弱。因此，可緩和基板面附近的處理液的流動的差異，可於基板面內形成速度差少的整流。According to the substrate processing apparatus of the present invention, a slit plate is included between the lower side of the substrate supported by the elevator and the bottom surface of the processing tank. The width of the plurality of slits formed in the slit plate in the outer region is larger than the width of the central region as viewed from the arrangement direction of the substrate. Therefore, when the strong liquid of the processing liquid supplied from the pair of ejection tubes and rising along the substrate surface in the central region flows through the slit plate and rises toward the substrate side, its momentum is weakened. In addition, the width of the slit is larger in the outer region where the liquid flow of the processing liquid is weaker than the central area where the strong liquid flow rises, so the momentum of the liquid flow of the processing liquid is not weakened much. Therefore, the difference in the flow of the processing liquid near the substrate surface can be reduced, and rectification with a small speed difference can be formed in the substrate surface.
以下對本發明的各實施方式進行說明。
[實施例1]Hereinafter, embodiments of the present invention will be described.
[Example 1]
以下，參照圖式對本發明的實施例1進行說明。
圖1是表示實施例1的基板處理裝置的概略結構的方塊圖，圖2是表示升降機與狹縫板的立體圖，圖3是狹縫板的縱剖面圖。Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings.
FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to Example 1. FIG. 2 is a perspective view showing an elevator and a slit plate. FIG. 3 is a longitudinal sectional view of the slit plate.
實施例1的基板處理裝置是可利用處理液對多片基板W一併進行處理的批次式的裝置。該基板處理裝置包括處理槽1、溢流槽3及升降機5。The substrate processing apparatus of Example 1 is a batch-type apparatus that can process a plurality of substrates W in one process using a processing liquid. The substrate processing apparatus includes a processing tank 1, an overflow tank 3, and an elevator 5.
處理槽1儲存處理液，於使多片基板W變成平行的狀態且排列於規定的排列方向上的狀態下收容所述多片基板W，並對多片基板W同時進行處理。如圖1所示，處理槽1的底部具有若自基板W的排列方向觀察，則底部的中央變成低谷的形狀。供給處理液的一對噴出管7分別配置於位於處理槽1的下部的底部側、且自基板W的排列方向觀察分別配置於兩側（圖1的左右方向）。一對噴出管7朝沿著處理槽1的底面的方向、且面向處理槽1的中央的方向供給處理液。具體而言，一對噴出管7朝比處理槽1的底面中央更靠近跟前的供給位置SP分別供給處理液。藉此，處理液的液流由處理槽1的底面反射而分散，因此可抑制處理液的液流集中於中央附近。因此，可稍微減弱於中央附近沿著基板W面上升的處理液的強液流。The processing tank 1 stores a processing liquid, stores the plurality of substrates W in a parallel state, and arranges the plurality of substrates W in a predetermined arrangement direction, and simultaneously processes the plurality of substrates W. As shown in FIG. 1, the bottom of the processing tank 1 has a shape in which the center of the bottom becomes a trough when viewed from the arrangement direction of the substrates W. A pair of discharge pipes 7 for supplying the processing liquid are respectively disposed on the bottom side of the lower portion of the processing tank 1 and are arranged on both sides as viewed from the arrangement direction of the substrates W (the left-right direction in FIG. 1). The pair of discharge pipes 7 supply the processing liquid in a direction along the bottom surface of the processing tank 1 and facing the center of the processing tank 1. Specifically, the pair of discharge pipes 7 respectively supply the processing liquid toward the supply position SP located closer to the front than the center of the bottom surface of the processing tank 1. Thereby, since the liquid flow of the processing liquid is reflected and dispersed by the bottom surface of the processing tank 1, it is possible to suppress the liquid flow of the processing liquid from being concentrated near the center. Therefore, the strong liquid flow of the processing liquid rising along the substrate W surface near the center can be slightly weakened.
溢流槽3配置於處理槽1的上緣的周圍。溢流槽3回收越過處理槽1的上緣而溢出的處理液。溢流槽3藉由循環配管9而與處理槽1的一對噴出管7連通連接。循環配管9自溢流槽3側朝向處理槽1側，包括泵11、線上加熱器（inline heater）13、及過濾器15。泵11將儲存於溢流槽3中的處理液吸入循環配管9中，並朝一對噴出管7側壓送處理液。線上加熱器13將於循環配管9中流通的處理液調節成處理溫度。例如，當處理液為含有對黏附於基板W上的氮化膜（SiN）進行蝕刻的磷酸者時，處理溫度例如為160℃。過濾器15對在循環配管9中流通的處理液中所包含的粒子進行過濾並去除。The overflow tank 3 is arranged around the upper edge of the processing tank 1. The overflow tank 3 collects a processing liquid that overflows the upper edge of the processing tank 1. The overflow tank 3 is connected to a pair of discharge pipes 7 of the processing tank 1 through a circulation pipe 9. The circulation piping 9 includes a pump 11, an inline heater 13, and a filter 15 from the overflow tank 3 side toward the processing tank 1 side. The pump 11 sucks the processing liquid stored in the overflow tank 3 into the circulation pipe 9 and pressure-feeds the processing liquid toward the pair of discharge pipes 7. The on-line heater 13 adjusts the processing liquid flowing through the circulation pipe 9 to a processing temperature. For example, when the processing liquid contains phosphoric acid that etches a nitride film (SiN) adhered to the substrate W, the processing temperature is, for example, 160 ° C. The filter 15 filters and removes particles contained in the processing liquid flowing through the circulation pipe 9.
供給管17是沿著處理槽1的內壁而延伸出，一端側的開口部朝向處理槽1的底面來配置。供給管17的另一端側與處理液供給源19連通連接。於供給管17中設置有開閉閥21。開閉閥21對自處理液供給源19朝供給管17中的處理液的流通進行控制。處理液供給源19儲存處理液，藉由開閉閥21被打開，而朝供給管17中供給常溫的處理液。The supply pipe 17 is extended along the inner wall of the processing tank 1, and the opening on one end side is arranged toward the bottom surface of the processing tank 1. The other end side of the supply pipe 17 is connected to the processing liquid supply source 19 in communication. An on-off valve 21 is provided in the supply pipe 17. The on-off valve 21 controls the flow of the processing liquid from the processing liquid supply source 19 to the supply pipe 17. The processing liquid supply source 19 stores the processing liquid and is opened by the on-off valve 21 to supply the processing liquid at a normal temperature to the supply pipe 17.
升降機5橫跨相當於處理槽1的內部的圖1中所示的「處理位置」與相當於處理槽1的上方的圖1中省略圖示的「待機位置」進行升降移動。升降機5具有背板23、中央部保持部25、及一對側部保持部27。背板23是沿著處理槽1的內壁的板狀的構件。中央部保持部25與一對側部保持部27於圖1的紙面內外方向上自背板23的下部延伸出來設置。中央部保持部25與一對側部保持部27於已將多片基板W平行地排列的狀態下，於成為圖1的紙面內外方向的規定的排列方向上保持多片基板W。一對側部保持部27隔著中央部保持部25來配置，抵接並支持立起姿勢的基板W的左右側的下緣。The elevator 5 moves up and down across the "processing position" shown in FIG. 1 corresponding to the inside of the processing tank 1 and the "standby position" (not shown in FIG. 1) corresponding to the upper part of the processing tank 1. The elevator 5 includes a back plate 23, a central portion holding portion 25, and a pair of side portion holding portions 27. The back plate 23 is a plate-like member along the inner wall of the processing tank 1. The central portion holding portion 25 and the pair of side portion holding portions 27 extend from the lower portion of the back plate 23 in the inner and outer directions of the paper surface in FIG. 1. The center portion holding portion 25 and the pair of side portion holding portions 27 hold the plurality of substrates W in a predetermined arrangement direction that becomes the inner and outer directions of the paper surface in a state where the plurality of substrates W are arranged in parallel. The pair of side-portion holding portions 27 are arranged with the center-portion holding portion 25 in contact with and support the lower edges of the left and right sides of the substrate W in the standing posture.
如圖3所示，在由升降機5支持的基板W的下方與處理槽1的底面之間配置有狹縫板31。狹縫板31呈薄板狀的外觀，形成有上下貫穿的細長形狀的開口，即多個狹縫33。狹縫板31安裝於處理槽1的前後的內壁上。另外，作為高度位置，狹縫板31以其上表面位於比處於處理位置上的升降機5的中央部保持部25的下端面更下方的方式配置。藉此，穿過了狹縫板31的處理液不會被中央部保持部25妨礙。於本實施例中，作為一例，於狹縫板31中形成有21個狹縫33。各狹縫33使長軸朝向基板W的排列方向而形成有多條，並以相互平行的位置關係來形成。As shown in FIG. 3, a slit plate 31 is arranged between the bottom of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. The slit plate 31 has a thin plate-like appearance, and is formed with a plurality of slits 33 that are elongated openings penetrating vertically. The slit plate 31 is attached to the front and rear inner walls of the processing tank 1. In addition, as the height position, the upper surface of the slit plate 31 is disposed below the lower end surface of the central portion holding portion 25 of the elevator 5 in the processing position. Thereby, the processing liquid that has passed through the slit plate 31 is not hindered by the central portion holding portion 25. In this embodiment, as an example, 21 slits 33 are formed in the slit plate 31. Each of the slits 33 is formed with a plurality of major axes facing the arrangement direction of the substrate W, and is formed in a positional relationship parallel to each other.
此處，當自基板W的排列方向（圖1及圖3的紙面內外方向）觀察時，將狹縫板31劃分成三個區域。例如，劃分成中央區域ARC、第1外區域AR1、及第2外區域AR2。中央區域ARC是包含中心且具有朝外的擴展的區域。第1外區域AR1是位於一對噴出管7側的外側的區域。第2外區域AR2是中央區域ARC與第1外區域AR1之間的區域。Here, the slit plate 31 is divided into three regions when viewed from the arrangement direction of the substrates W (directions inside and outside the paper surface in FIGS. 1 and 3). For example, it is divided into a central area ARC, a first outer area AR1, and a second outer area AR2. The central area ARC is an area containing a center and having an outward expansion. The first outer area AR1 is an area located outside the pair of discharge pipes 7. The second outer area AR2 is an area between the central area ARC and the first outer area AR1.
各狹縫33之中，位於中央區域ARC中的七個狹縫33以變成寬度WD1的方式形成。位於第1外區域AR1中的四個狹縫33以寬度WD2來形成。位於第2外區域AR2中的兩個狹縫33以寬度WD3來形成。所述寬度WD1～寬度WD3的大小關係變成WD1＜WD3＜WD2。即，以WD1的寬度最窄，按WD3、WD2的順序變大的方式設定各狹縫33。Among the slits 33, seven slits 33 located in the central area ARC are formed so as to have a width WD1. Four slits 33 in the first outer area AR1 are formed with a width WD2. The two slits 33 in the second outer area AR2 are formed with a width WD3. The magnitude relationship between the widths WD1 to WD3 becomes WD1 <WD3 <WD2. That is, the slits 33 are set so that the width of WD1 is the narrowest and the order of WD3 and WD2 becomes larger.
再者，與於板狀構件中設置有多個小孔的沖孔板不同，所述狹縫板31具有容易加工這一優點。Furthermore, unlike the punched plate in which a plurality of small holes are provided in the plate-like member, the slit plate 31 has the advantage of being easy to process.
此處，若返回至圖1，則控制部61內置有未圖示的中央處理單元（Central Processing Unit，CPU）或存儲器。控制部61對升降機5的升降動作、泵11的開關動作、線上加熱器13的調溫動作、開閉閥21的開閉動作等進行統一控制。Here, when returning to FIG. 1, the control unit 61 includes a central processing unit (CPU) or a memory (not shown). The control unit 61 performs unified control of the lifting operation of the elevator 5, the switching operation of the pump 11, the temperature adjustment operation of the on-line heater 13, and the opening and closing operation of the on-off valve 21.
根據如此構成的實施例1的基板處理裝置，在由升降機5支持的基板W的下方與處理槽1的底面之間包括狹縫板31。形成於該狹縫板31上的21個狹縫33於第1外區域AR1及第2外區域AR2中的寬度WD2、寬度WD3比自基板W的排列方向觀察的中央區域ARC的寬度WD1大。因此，自一對噴出管7供給，並於中央區域ARC中沿著基板W面上升的處理液的強液流於穿過狹縫板31而朝基板W側上升時，其勢頭被減弱。另外，於處理液的液流比強液流上升的中央區域ARC弱的第1外區域AR1及第2外區域AR2中，狹縫33的寬度WD2、寬度WD3比寬度WD1大，因此處理液的液流的勢頭不怎麼被減弱。因此，可緩和基板W面附近的處理液的流動的差異，可於基板W面內形成速度差少的整流。According to the substrate processing apparatus of the first embodiment thus configured, the slit plate 31 is included between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. The widths WD2 and WD3 of the 21 slits 33 formed in the slit plate 31 in the first outer region AR1 and the second outer region AR2 are larger than the width WD1 of the central region ARC viewed from the arrangement direction of the substrate W. Therefore, when the strong liquid of the processing liquid supplied from the pair of discharge pipes 7 and rising along the substrate W surface in the central area ARC flows through the slit plate 31 and rises toward the substrate W side, its momentum is weakened. In addition, in the first outer area AR1 and the second outer area AR2 where the liquid flow of the treatment liquid is weaker than the central area ARC where the strong liquid flow rises, the width WD2 and width WD3 of the slit 33 are larger than the width WD1. The momentum of the flow is not weakened much. Therefore, the difference in the flow of the processing liquid near the substrate W surface can be alleviated, and rectification with a small speed difference can be formed in the substrate W surface.
另外，由於自中央區域ARC起按第2外區域AR2、第1外區域AR1的順序增大狹縫的寬度，因此可對應於處理液的液流的勢頭精細地緩和差異。因此，可進一步緩和基板W面附近的處理液的流動的差異，可於基板W面內形成速度差少的整流。
[實施例2]In addition, since the width of the slit is increased in the order of the second outer area AR2 and the first outer area AR1 from the central area ARC, the difference can be finely mitigated in accordance with the momentum of the liquid flow of the processing liquid. Therefore, the difference in the flow of the processing liquid near the substrate W surface can be further alleviated, and rectification with a small speed difference can be formed in the substrate W surface.
[Example 2]
繼而，參照圖式對本發明的實施例2進行說明。圖4是實施例2的基板處理裝置的狹縫板與遮板的縱剖面圖。Next, a second embodiment of the present invention will be described with reference to the drawings. 4 is a longitudinal sectional view of a slit plate and a shutter plate of the substrate processing apparatus according to the second embodiment.
再者，於以下的說明中，僅對與所述實施例1的不同點進行說明，關於共同的結構，藉由賦予相同的符號來省略說明。It should be noted that in the following description, only differences from the first embodiment will be described. Regarding the common configuration, the description will be omitted by assigning the same reference numerals.
本實施例2的基板處理裝置在由升降機5支持的基板W的下方與處理槽1的底面之間配置有狹縫板71及遮板73。狹縫板71與所述實施例1同樣地呈薄板狀的外觀，形成有上下貫穿的多個狹縫75。於本實施例中，作為一例，於狹縫板71中形成有21個狹縫75。但是，本實施例中的狹縫75自基板W的排列方向觀察，任何區域中的狹縫75均具有相同的寬度。In the substrate processing apparatus of the second embodiment, a slit plate 71 and a shield plate 73 are arranged between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. The slit plate 71 has a thin plate-like appearance similar to that of the first embodiment, and has a plurality of slits 75 penetrating vertically. In this embodiment, as an example, 21 slits 75 are formed in the slit plate 71. However, the slits 75 in this embodiment are viewed from the arrangement direction of the substrate W, and the slits 75 in any region have the same width.
遮板73設置於狹縫板71上。具體而言，遮板73包含多個板狀構件77。此處，作為一例，包含六根板狀構件77。六根板狀構件77沿著狹縫75的長軸來配置長邊，且六根板狀構件77以相互平行的位置關係朝向處理槽1的底面側而立設。各板狀構件77於相互之間隔著三個狹縫75來設置。The shutter 73 is provided on the slit plate 71. Specifically, the shutter 73 includes a plurality of plate-like members 77. Here, as an example, six plate-like members 77 are included. The six plate-shaped members 77 are arranged along the long axis of the slit 75 with long sides, and the six plate-shaped members 77 are erected toward the bottom surface side of the processing tank 1 in a positional relationship parallel to each other. Each of the plate-like members 77 is provided with three slits 75 therebetween.
進而，當自基板W的排列方向觀察遮板73時，六根板狀構件77的各下端面與處理槽1的底面的距離自一對噴出管7側朝向處理槽1的中央依序變短。換言之，構成遮板73的六個板狀構件77隨著自外側朝向中央，使自狹縫板71起的長度變長。Furthermore, when the shutter 73 is viewed from the direction in which the substrates W are arranged, the distances between the lower end surfaces of the six plate-shaped members 77 and the bottom surface of the processing tank 1 are sequentially shortened from the pair of discharge pipes 7 toward the center of the processing tank 1. In other words, as the six plate-like members 77 constituting the shutter 73 go from the outside toward the center, the length from the slit plate 71 becomes longer.
根據如此構成的實施例2的基板處理裝置，在由升降機5支持的基板W的下方與處理槽1的底面之間包括狹縫板71。進而，於狹縫板71上設置有朝向底面而立設的遮板73。自一對噴出管7供給的處理液的勢頭由遮板73減弱，於中央區域中沿著基板W面上升的處理液的強液流於穿過狹縫板71而朝基板W側上升時，其勢頭被進一步減弱。因此，可緩和基板W面附近的處理液的流動的差異，可於基板W面內形成速度差少的整流。According to the substrate processing apparatus of the second embodiment thus configured, the slit plate 71 is included between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. Further, a slit plate 71 is provided on the slit plate 71 so as to be erected toward the bottom surface. The momentum of the processing liquid supplied from the pair of discharge pipes 7 is weakened by the shield 73, and when the strong liquid of the processing liquid rising along the substrate W surface in the central region flows through the slit plate 71 and rises toward the substrate W side, Its momentum has been further weakened. Therefore, the difference in the flow of the processing liquid near the substrate W surface can be alleviated, and rectification with a small speed difference can be formed in the substrate W surface.
另外，越是液流相互碰撞的中央，六個板狀構件77的下端面與處理槽1的底面的距離變得越短，因此可對應於處理液的液流的勢頭精細地緩和差異。因此，可進一步緩和基板W面附近的處理液的流動的差異，可於基板W面內形成速度差少的整流。
[實施例3]In addition, the distance between the lower end surfaces of the six plate-shaped members 77 and the bottom surface of the processing tank 1 becomes shorter as the centers where the liquid flows collide with each other, so that the difference in the momentum of the liquid flow of the processing liquid can be finely mitigated. Therefore, the difference in the flow of the processing liquid near the substrate W surface can be further alleviated, and rectification with a small speed difference can be formed in the substrate W surface.
[Example 3]
繼而，參照圖式對本發明的實施例3進行說明。圖5是實施例3的基板處理裝置的遮板的縱剖面圖。Next, a third embodiment of the present invention will be described with reference to the drawings. 5 is a longitudinal sectional view of a shutter of a substrate processing apparatus according to a third embodiment.
再者，於以下的說明中，僅對與所述實施例1的不同點進行說明，關於共同的結構，藉由賦予相同的符號來省略詳細的說明。It should be noted that in the following description, only differences from the first embodiment will be described. Regarding common structures, detailed descriptions will be omitted by assigning the same reference numerals.
本實施例3的基板處理裝置在由升降機5支持的基板W的下方與處理槽1的底面之間包括遮板81。遮板81包含多片板狀構件83，被固定於處理槽1的前後的內側面上。各遮板81以相互平行的位置關係朝向處理槽1的底面側而立設。於所述本實施例中，例如由四個板狀構件83構成遮板81。The substrate processing apparatus of the third embodiment includes a shutter 81 between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. The shutter 81 includes a plurality of plate-like members 83 and is fixed to the front and rear inner surfaces of the processing tank 1. The shutters 81 are erected toward the bottom surface side of the processing tank 1 in a positional relationship parallel to each other. In the present embodiment, the shutter 81 is formed of, for example, four plate-shaped members 83.
另外，當自基板W的排列方向觀察遮板81時，各板狀構件83的下端面與處理槽1的底面的距離自一對噴出管7側朝向處理槽1的中央依序變短。換言之，構成遮板81的四個板狀構件83以隨著自外側朝向中央，下端面靠近處理槽1的底面的方式配置。In addition, when the shutter 81 is viewed from the direction in which the substrates W are arranged, the distance between the lower end surface of each plate-like member 83 and the bottom surface of the processing tank 1 decreases in sequence from the pair of discharge pipes 7 toward the center of the processing tank 1. In other words, the four plate-like members 83 constituting the shutter 81 are arranged so that the lower end surface approaches the bottom surface of the processing tank 1 as it goes from the outside toward the center.
進而，於俯視及自基板W的排列方向觀察，各板狀構件83配置在中央部保持部25與側部保持部27之間。若於中央部保持部25的位置上配置遮板81的四個板狀構件的任一個，則處理液於某種程度上已分散，因此減弱處理液的流動的勢頭的效果變低。另一方面，若於比側部保持部27更靠近一對噴出管7的位置上配置遮板81的四個板狀構件83的任一個，則處理液由板狀構件83與側部保持部27阻斷，處理液的流動變得極差。因此，將四個板狀構件83在中央部保持部25與側部保持部27之間分別各配置兩個，藉此可適宜地減弱處理液的液流。Further, each of the plate-like members 83 is arranged between the central portion holding portion 25 and the side portion holding portion 27 when viewed in plan and viewed from the arrangement direction of the substrate W. When any one of the four plate-like members of the shutter 81 is disposed at the position of the central portion holding portion 25, the treatment liquid is dispersed to some extent, and thus the effect of reducing the momentum of the flow of the treatment liquid is reduced. On the other hand, when any one of the four plate-shaped members 83 of the shutter 81 is disposed at a position closer to the pair of discharge pipes 7 than the side-portion holding portion 27, the processing liquid is transferred from the plate-shaped member 83 and the side portion 27 is blocked, and the flow of the treatment liquid becomes extremely poor. Therefore, by arranging two plate-shaped members 83 between the central portion holding portion 25 and the side portion holding portion 27 respectively, the liquid flow of the processing liquid can be appropriately reduced.
根據如此構成的實施例3的基板處理裝置，在由升降機5支持的基板W的下方與處理槽1的底面之間包括遮板81。當自基板W的排列方向觀察時，遮板81所包括的四個板狀構件83的下端面與處理槽1的底面的距離自一對噴出管7側朝向處理槽1的中央依序變短。因此，不會使來自一對噴出管7的處理液的流量減少，自一對噴出管7供給的處理液的勢頭由遮板81減弱，因此於中央區域中沿著基板W面上升的液流的勢頭被減弱。因此，可緩和基板W面附近的處理液的流動的差異，可於基板W面內形成速度差少的整流。According to the substrate processing apparatus of the third embodiment configured as described above, the shutter 81 is included between the lower side of the substrate W supported by the lifter 5 and the bottom surface of the processing tank 1. When viewed from the arrangement direction of the substrate W, the distances between the lower end surfaces of the four plate-like members 83 included in the shutter 81 and the bottom surface of the processing tank 1 are sequentially shortened from the pair of discharge pipes 7 toward the center of the processing tank 1. . Therefore, the flow rate of the processing liquid from the pair of discharge pipes 7 is not reduced, and the momentum of the processing liquid supplied from the pair of discharge pipes 7 is weakened by the shutter 81. Therefore, the liquid flow rising along the substrate W surface in the central region The momentum is weakened. Therefore, the difference in the flow of the processing liquid near the substrate W surface can be alleviated, and rectification with a small speed difference can be formed in the substrate W surface.
＜處理液的流動的評價＞<Evaluation of Flow of Treatment Liquid>
此處，參照圖6～圖9，對關於所述實施例1～實施例3與習知例的處理液的流動進行評價。再者，圖6是表示實施例1中的處理液的流動的模擬結果，圖7是表示實施例2中的處理液的流動的模擬結果，圖8是表示實施例3中的處理液的流動的模擬結果。另外，圖9是表示習知例中的處理液的流動的模擬結果。但是，此處所述的習知例於底面上不包括液流分散構件。Here, the flow of the processing liquid with respect to the said Example 1-Example 3 and the conventional example is evaluated with reference to FIGS. 6-9. 6 is a simulation result showing the flow of the processing liquid in Example 1, FIG. 7 is a simulation result showing the flow of the processing liquid in Example 2, and FIG. 8 is a flow showing the flow of the processing liquid in Example 3. Simulation results. FIG. 9 is a simulation result showing the flow of the treatment liquid in the conventional example. However, the conventional example described here does not include a liquid flow dispersing member on the bottom surface.
雖然於灰階的圖式中難以判明，但於所述圖6～圖9中，於表示基板W的圓形的區域中白色區域越少，表示於基板W面內變成速度差越少的整流。另外，較佳為於表示基板W的圓形的區域內，由箭線所形成的旋渦少。Although it is difficult to discern in the gray scale diagrams, in FIGS. 6 to 9 described above, the smaller the white area in the circular area representing the substrate W, the smaller the speed difference in the substrate W surface. . In addition, it is preferable that there are few vortices formed by arrow lines in a circular area representing the substrate W.
若對所述圖6～圖9進行比較，則可知與習知例相比，各實施例1～實施例3於基板W面內獲得速度差少的整流。於習知例中，於基板W的左右的下部產生大的旋渦而產生速度差。實施例2於基板W的左右的邊緣部，流速變得比實施例1快，而比實施例1遜色。實施例3於基板W的中央下部，流速變得比實施例1、實施例2快，而比實施例1、實施例2遜色。Comparing FIG. 6 to FIG. 9, it can be seen that, compared with the conventional example, each of Examples 1 to 3 obtains rectification with less speed difference in the W plane of the substrate. In the conventional example, a large vortex is generated on the left and right lower portions of the substrate W, and a speed difference is generated. In Example 2, the flow velocity at the left and right edge portions of the substrate W became faster than that of Example 1, and was inferior to that of Example 1. In the third embodiment, the flow velocity becomes faster than that of the first and second embodiments in the lower center of the substrate W, and is inferior to that of the first and second embodiments.
本發明並不限定於所述實施方式，可如下述般實施變形。The present invention is not limited to the above-mentioned embodiment, and can be modified as described below.
（1）於所述各實施例1～實施例3中，作為處理液，以含有磷酸者為例進行了說明，但本發明的處理液並不限定於含有磷酸者。(1) In each of the above-mentioned Examples 1 to 3, as the treatment liquid, a case containing phosphoric acid was described as an example, but the treatment liquid of the present invention is not limited to those containing phosphoric acid.
（2）於所述各實施例1～實施例3中，於處理槽1的周圍包括溢流槽3，但本發明並不限定於此種形態。例如，亦可為包括包圍處理槽1的腔室，並於腔室的底部回收自處理槽1中溢出的處理液的結構。(2) In each of Examples 1 to 3 described above, the overflow tank 3 is included around the processing tank 1, but the present invention is not limited to this form. For example, it may be a structure including a chamber surrounding the processing tank 1 and recovering the processing liquid overflowing from the processing tank 1 at the bottom of the chamber.
（3）於所述各實施例1～實施例3中是包括循環配管9，使處理液於處理槽1與溢流槽3中循環的結構，但本發明並不限定於此種結構。例如，亦可為將自處理槽1中溢出的處理液直接排出的方式。(3) In each of the first to third embodiments described above, the configuration includes a circulation pipe 9 to circulate the processing liquid in the processing tank 1 and the overflow tank 3, but the present invention is not limited to such a configuration. For example, it is also possible to directly discharge the processing liquid overflowing from the processing tank 1.
（4）於所述各實施例1、實施例2中，形成有21個狹縫33，但本發明並不限定於所述個數。例如，亦可將狹縫33的個數設為20個以下或22個以上。(4) In each of the first and second embodiments, 21 slits 33 are formed, but the present invention is not limited to the number. For example, the number of the slits 33 may be 20 or less or 22 or more.
（5）於所述實施例1中，將狹縫33的寬度於處理槽1的一側的區域中劃分成三種，而設為於各區域中寬度不同的狹縫33，但本發明並不限定於該形態。即，亦可劃分成四種以上，只要以於經劃分的各區域中自一對噴出管7朝向中央寬度變小的方式形成即可。另外，亦可不進行劃分，自一對噴出管7朝向中央所形成的所有狹縫33以不同的寬度構成，即以狹縫33的寬度逐漸變窄的方式構成。(5) In the first embodiment, the width of the slit 33 on the side of the processing tank 1 is divided into three types, and the slits 33 having different widths in each area are set, but the present invention is not It is limited to this form. That is, it may be divided into four or more types, as long as it is formed so that the width from the pair of discharge pipes 7 becomes smaller toward the center in each divided area. In addition, without dividing, all the slits 33 formed from the pair of discharge pipes 7 toward the center may be formed with different widths, that is, the widths of the slits 33 may be gradually narrowed.
（6）於所述實施例2中，由六個板狀構件77構成遮板73，但亦可由兩個以上的板狀構件77構成遮板73。(6) In the second embodiment, the shutter 73 is configured by six plate-like members 77, but the shutter 73 may be configured by two or more plate-like members 77.
（7）於所述實施例3中，由四個板狀構件83構成遮板81，但本發明亦可利用六個以上的板狀構件83構成遮板81。
[產業上之可利用性](7) In the third embodiment, the shutter 81 is configured by four plate-shaped members 83, but the present invention may also be configured by using six or more plate-shaped members 83.
[Industrial availability]
如以上般，本發明適合於利用處理液對各種基板進行處理的基板處理裝置。As described above, the present invention is suitable for a substrate processing apparatus that processes various substrates using a processing liquid.
1‧‧‧處理槽1‧‧‧ treatment tank
3‧‧‧溢流槽 3‧‧‧ overflow tank
5‧‧‧升降機 5‧‧‧ lift
7‧‧‧噴出管 7‧‧‧ spout tube
9‧‧‧循環配管 9‧‧‧Circular piping
11‧‧‧泵 11‧‧‧Pump
13‧‧‧線上加熱器 13‧‧‧ online heater
15‧‧‧過濾器 15‧‧‧ Filter
17‧‧‧供給管 17‧‧‧ supply pipe
19‧‧‧處理液供給源 19‧‧‧ Treatment liquid supply source
21‧‧‧開閉閥 21‧‧‧ On-off valve
23‧‧‧背板 23‧‧‧ back plate
25‧‧‧中央部保持部 25‧‧‧ Central Department Holding Department
27‧‧‧側部保持部 27‧‧‧side holding section
31、71‧‧‧狹縫板 31, 71‧‧‧Slit plate
33、75‧‧‧狹縫 33, 75‧‧‧ slit
61‧‧‧控制部 61‧‧‧Control Department
73、81‧‧‧遮板 73, 81‧‧‧ Shield
77、83‧‧‧板狀構件 77, 83‧‧‧ plate members
ARC‧‧‧中央區域 ARC‧‧‧Central Area
AR1‧‧‧第1外區域 AR1‧‧‧Outer Area 1
AR2‧‧‧第2外區域 AR2‧‧‧Outer Area 2
SP‧‧‧供給位置 SP‧‧‧ Supply location
W‧‧‧基板 W‧‧‧ substrate
WD1～WD3‧‧‧寬度 WD1 ～ WD3‧‧‧Width
圖1是表示實施例1的基板處理裝置的概略結構的方塊圖。FIG. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment.
圖2是表示升降機與狹縫板的立體圖。 FIG. 2 is a perspective view showing an elevator and a slit plate.
圖3是狹縫板的縱剖面圖。 Fig. 3 is a longitudinal sectional view of a slit plate.
圖4是實施例2的基板處理裝置的狹縫板與遮板的縱剖面圖。 4 is a longitudinal sectional view of a slit plate and a shutter plate of the substrate processing apparatus according to the second embodiment.
圖5是實施例3的基板處理裝置的遮板的縱剖面圖。 5 is a longitudinal sectional view of a shutter of a substrate processing apparatus according to a third embodiment.
圖6是表示實施例1中的處理液的流動的模擬結果。 FIG. 6 is a simulation result showing the flow of the processing liquid in Example 1. FIG.
圖7是表示實施例2中的處理液的流動的模擬結果。 FIG. 7 is a simulation result showing the flow of the processing liquid in Example 2. FIG.
圖8是表示實施例3中的處理液的流動的模擬結果。 FIG. 8 is a simulation result showing the flow of the treatment liquid in Example 3. FIG.
圖9是表示習知例中的處理液的流動的模擬結果。 FIG. 9 is a simulation result showing a flow of a treatment liquid in a conventional example.
Claims (7)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-051050 | 2018-03-19 | ||
| JP2018051050A JP7002969B2 (en) | 2018-03-19 | 2018-03-19 | Board processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201939647A true TW201939647A (en) | 2019-10-01 |
| TWI710048B TWI710048B (en) | 2020-11-11 |
Family
ID=67987015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108109185A TWI710048B (en) | 2018-03-19 | 2019-03-18 | Substrate processing device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7002969B2 (en) |
| KR (2) | KR102388646B1 (en) |
| CN (1) | CN111886675B (en) |
| TW (1) | TWI710048B (en) |
| WO (1) | WO2019181067A1 (en) |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61125136A (en) * | 1984-11-22 | 1986-06-12 | Hitachi Ltd | Treatment tank |
| JPH0310253A (en) * | 1989-06-07 | 1991-01-17 | Fujitsu Ltd | Method for processing photomask |
| JPH0480040U (en) * | 1990-11-26 | 1992-07-13 | ||
| JP2970894B2 (en) * | 1993-04-07 | 1999-11-02 | 東京エレクトロン株式会社 | Cleaning equipment |
| JP2912538B2 (en) * | 1993-12-08 | 1999-06-28 | 大日本スクリーン製造株式会社 | Immersion type substrate processing equipment |
| JPH0817782A (en) * | 1994-06-28 | 1996-01-19 | Dainippon Screen Mfg Co Ltd | Substrate treatment device |
| JPH08195431A (en) * | 1995-01-12 | 1996-07-30 | Tokyo Electron Ltd | Substrate holding implement and cleaning apparatus |
| JP3343033B2 (en) * | 1996-06-28 | 2002-11-11 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JPH10303167A (en) * | 1997-04-28 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | Substrate treating device |
| JP2000012497A (en) * | 1998-06-22 | 2000-01-14 | Toho Kasei Kk | Processed object processor |
| JP2000070886A (en) * | 1998-09-03 | 2000-03-07 | Toho Kasei Kk | Substrate processing device |
| JP2002134467A (en) * | 2000-10-26 | 2002-05-10 | Daikin Ind Ltd | Substrate processing apparatus |
| JP2007019238A (en) * | 2005-07-07 | 2007-01-25 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP4781253B2 (en) * | 2006-12-22 | 2011-09-28 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| JP4767204B2 (en) * | 2007-03-26 | 2011-09-07 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| JP2009231579A (en) * | 2008-03-24 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | Board treatment device and board treatment method |
| JP5394784B2 (en) * | 2009-03-24 | 2014-01-22 | 大日本スクリーン製造株式会社 | Substrate cleaning device |
| JP6287750B2 (en) * | 2013-12-27 | 2018-03-07 | 東京エレクトロン株式会社 | Substrate liquid processing equipment |
| JP2017117926A (en) * | 2015-12-24 | 2017-06-29 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| JP6617036B2 (en) * | 2016-01-18 | 2019-12-04 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
-
2018
- 2018-03-19 JP JP2018051050A patent/JP7002969B2/en active Active
- 2018-11-22 KR KR1020207022192A patent/KR102388646B1/en active IP Right Grant
- 2018-11-22 WO PCT/JP2018/043203 patent/WO2019181067A1/en active Application Filing
- 2018-11-22 CN CN201880091453.6A patent/CN111886675B/en active Active
- 2018-11-22 KR KR1020227011423A patent/KR102429858B1/en active IP Right Grant
-
2019
- 2019-03-18 TW TW108109185A patent/TWI710048B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI710048B (en) | 2020-11-11 |
| JP2019165067A (en) | 2019-09-26 |
| CN111886675B (en) | 2024-03-26 |
| KR20200099610A (en) | 2020-08-24 |
| KR102429858B1 (en) | 2022-08-04 |
| KR20220047406A (en) | 2022-04-15 |
| WO2019181067A1 (en) | 2019-09-26 |
| CN111886675A (en) | 2020-11-03 |
| JP7002969B2 (en) | 2022-01-20 |
| KR102388646B1 (en) | 2022-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10483137B2 (en) | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium | |
| JP2017069529A (en) | Substrate liquid processing device and substrate liquid processing method | |
| KR930020596A (en) | Treatment tanks for cleaning equipment | |
| TWI754164B (en) | Substrate processing device and substrate processing method | |
| JP7178261B2 (en) | Substrate liquid processor | |
| US20190148176A1 (en) | Substrate processing apparatus | |
| JP7212767B2 (en) | Substrate processing equipment | |
| TW201939647A (en) | Substrate processing device | |
| KR102458733B1 (en) | Plasma processing device | |
| JP6617036B2 (en) | Substrate processing equipment | |
| JP2009238802A (en) | Substrate processing apparatus | |
| JP6231249B2 (en) | Substrate processing equipment | |
| KR102666693B1 (en) | Substrate liquid processing apparatus and substrate liquid processing method | |
| KR102100900B1 (en) | Mask assembly and substrate processing apparatus including the same | |
| JPS60113433A (en) | Washing equipment of thin plate | |
| TW201401348A (en) | Micro bubble processing device | |
| TW202235674A (en) | Apparatus and system for delivering gas to a process chamber | |
| TWM535872U (en) | Spoiler applied in wet etching process and etching system having the same | |
| JPH0499885A (en) | Etching device | |
| JP2016039342A (en) | Temperature control device | |
| KR20150068019A (en) | Apparatus for Wafer Cleaning | |
| JP2012230997A (en) | Etching method of substrate |