KR102666693B1 - Substrate liquid processing apparatus and substrate liquid processing method - Google Patents

Abstract

The present invention provides a substrate liquid treatment device that can uniformly treat a substrate with a treatment liquid.
In the present invention, a processing tank 34 is provided for treating a plurality of substrates 8 by immersing them in a processing liquid in an array, and is disposed below the substrate 8 inside the processing tank 34, A substrate liquid processing device (1) having a processing liquid supply nozzle (49) formed with a discharge port (76) for discharging the processing liquid in a tube body (74) extending along the arrangement direction of the substrate (8), The discharge port 76 forms a first side 78 and a second side 79 at intervals in a horizontal direction perpendicular to the arrangement direction of the substrate 8, and the first side 78 or/and The outer edge of the second side 79 is at a position (A1, C1) where the inner edge is opened outward in the horizontal direction rather than the position (B1, D1) where the inner edge extends in the radial direction from the center of the tube body 74. ) is provided.

Description

Substrate liquid processing device and substrate liquid processing method {SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD}

The present invention relates to a substrate liquid treatment device and a substrate liquid treatment method that treat a plurality of substrates arranged by immersing them in a treatment liquid.

When manufacturing semiconductor components, flat panel displays, etc., various liquid treatments are performed on substrates such as semiconductor wafers and liquid crystal substrates using processing liquids such as cleaning liquids and etching liquids using substrate liquid processing equipment.

For example, in the substrate liquid processing apparatus disclosed in Patent Document 1, two processing liquid supply nozzles are provided at the bottom of the processing tank, and processing liquid is supplied into the inside of the processing tank from the processing liquid supply nozzles.

In this substrate liquid processing apparatus, a plurality of substrates are immersed in a processing tank in which a processing liquid is stored, arranged in a vertically standing position and spaced apart in the horizontal direction. The processing liquid supply nozzle extends in the direction in which the substrates are arranged, and discharge ports for discharging the processing liquid are provided at intervals in the direction in which the substrates are arranged. The discharge port is formed as a through hole having a circular opening. The two processing liquid supply nozzles are inclined inward and upward with their respective discharge ports facing the center of the substrate.

Then, in the substrate liquid processing device, the processing liquid is discharged from the discharge ports of the two processing liquid supply nozzles toward the center of the substrate, forming an upward flow of the processing liquid flowing along the surface of the substrate inside the processing tank, and the processing liquid is rising. The surface of the substrate is treated with a liquid.

Patent Document 1: Japanese Patent Publication No. 2012-15490

However, in the conventional substrate liquid processing device, the discharge ports of the two processing liquid supply nozzles are formed as through holes inclined toward the center of the substrate, so the directivity of the processing liquid discharged from the processing liquid supply nozzles is very high. It is done.

Therefore, most of the processing liquid discharged from the processing liquid supply nozzle flows obliquely toward the center of the substrate, and the processing liquid discharged from the two processing liquid supply nozzles collide with each other in the central part of the substrate. As a result, a vortex is generated inside the treatment tank due to the difference in the flow rate of the treatment liquid, resulting in a portion where the treatment liquid stays. As a result, there is a risk that the conventional substrate liquid treatment apparatus may not be able to uniformly treat the surface of the substrate.

Therefore, in the present invention, in the substrate liquid processing apparatus, a processing tank for processing a plurality of substrates arranged by immersing them in a processing liquid, and a processing tank disposed below the substrates inside the processing tank to adjust the arrangement direction of the substrates. It has a processing liquid supply nozzle formed with a discharge port for discharging the processing liquid on a pipe body extending along the same line, and the discharge port forms a first side and a second side at intervals in a horizontal direction perpendicular to the arrangement direction of the substrate. It is assumed that the outer edge of the first side or/and the second side is provided at a position where the inner edge is opened outward in the horizontal direction rather than at a position where the inner edge extends in the radial direction from the center of the tube body.

In addition, in the present invention, in the substrate liquid processing apparatus, a processing tank for treating a plurality of substrates by immersing them in a processing liquid in an arranged state, and disposed below the substrate within the processing tank, arrange the plurality of substrates. It has a processing liquid supply nozzle formed with a discharge port for discharging the processing liquid in a pipe body extending along a direction, and the discharge port is spaced in a horizontal direction perpendicular to the arrangement direction of the substrate and is spaced on the first side and the second side. It is assumed that the opening angle of the first side and the second side is opened by 180 degrees or more.

In addition, an inner tube for supplying the treatment liquid is accommodated inside the tube body, and a supply port for supplying the treatment liquid from the inner tube to the tube body is formed facing in a direction opposite to the discharge port formed in the tube body. did.

In addition, the discharge ports were respectively disposed between the plurality of substrates arranged, and the supply ports were respectively disposed between the juxtaposed discharge ports.

Additionally, an inner tube for supplying the treatment liquid is accommodated inside the tube body, and the outer peripheral surface of the inner tube protrudes outward from the first side or/and the second side.

In addition, the plurality of processing liquid supply nozzles inside the treatment tank are arranged in parallel so that the discharge directions of the processing liquid at the center of the first side and the second side of each discharge port do not intersect. It was decided that

Additionally, the plurality of processing liquid supply nozzles were arranged inside the processing tank between the plurality of substrate holding bodies provided to maintain the substrates in an aligned state.

Additionally, the side surface of the substrate holding body was formed to be parallel so as not to intersect the discharge direction of the processing liquid at the center of the first side and the second side of the discharge port.

In addition, the treatment tank was further provided with a bubble supply unit for supplying air bubbles from below the substrate.

Additionally, the bubble supply unit discharges bubbles together with the processing liquid from the processing liquid supply nozzle.

Additionally, the bubbles were assumed to be in a liquid form at the flow pressure of the processing liquid discharged from the processing liquid supply nozzle.

Additionally, it was assumed that the bubbles were generated by boiling the treatment liquid.

In addition, the bubbles were assumed to be generated by controlling at least one of the flow pressure of the processing liquid, the temperature of the processing liquid, and the concentration of the processing liquid.

Additionally, an atmospheric pressure sensor was provided outside the treatment tank, and the temperature and concentration of the treatment liquid that generates the bubbles were corrected according to the signal obtained from the atmospheric pressure sensor.

In addition, in the present invention, a plurality of substrates are immersed in the processing liquid stored in a processing tank in an arranged state, the processing liquid is supplied from a processing liquid supply nozzle disposed below the substrate inside the processing tank, and the substrate is In the substrate liquid treatment method, the processing liquid is discharged from the processing liquid supply nozzle in a manner that spreads outward from the center of the processing liquid supply nozzle in a radial direction.

In addition, in the present invention, a plurality of substrates are immersed in the processing liquid stored in a processing tank in an arranged state, the processing liquid is supplied from a processing liquid supply nozzle disposed below the substrate inside the processing tank, and the substrate is In the substrate liquid treatment method, the processing liquid is discharged from the processing liquid supply nozzle in a manner that spreads outward by more than 180 degrees from the center of the processing liquid supply nozzle.

Additionally, air bubbles were supplied from below the substrate.

According to the present invention, the occurrence of eddy currents or stagnation of the processing liquid inside the processing tank can be suppressed, and the substrate can be uniformly treated with the processing liquid.

1 is a plan view showing a substrate liquid processing device.
Figure 2 is an explanatory diagram showing an etching processing device according to Example 1.
Figure 3 is a front view showing the treatment tank.
Figure 4 is a floor plan of the same building.
Figure 5 is an enlarged cross-sectional view of the same plane.
6 is an enlarged front cross-sectional view (a) and an enlarged side cross-sectional view (b) showing the treatment liquid supply nozzle.
7 is an enlarged front cross-sectional view showing another processing liquid supply nozzle.
Fig. 8 is an explanatory diagram showing an etching processing device according to Example 2.
9 is an explanatory diagram showing an etching processing device according to Example 3.
Fig. 10 is an explanatory diagram showing an etching processing device according to Example 4.
11 is an explanatory diagram showing an etching processing device according to a modification.
Fig. 12 is an explanatory diagram showing an etching processing device according to a modification.

Below, the specific configuration of the substrate liquid processing device and the substrate liquid processing method according to the present invention will be described with reference to the drawings.

As shown in FIG. 1, the substrate liquid processing device 1 includes a carrier loading/unloading section 2, a lot forming section 3, a lot placing section 4, a lot conveying section 5, a lot processing section 6, It has a control unit (7).

The carrier loading/unloading section 2 carries out loading and unloading of a carrier 9 that accommodates a plurality of sheets (e.g., 25 sheets) of substrates (silicon wafers) 8 arranged vertically in a horizontal position.

This carrier loading/unloading section 2 includes a carrier stage 10 for arranging a plurality of carriers 9, a carrier transport mechanism 11 for transporting the carriers 9, and a device for temporarily storing the carriers 9. Carrier stocks 12 and 13 and a carrier placement table 14 on which the carrier 9 is placed are provided. Here, the carrier stock 12 temporarily stores the substrate 8, which becomes a product, before processing it in the lot processing unit 6. Additionally, the carrier stock 13 is temporarily stored after the substrate 8, which becomes a product, is processed in the lot processing unit 6.

Then, the carrier loading/unloading section 2 transfers the carrier 9 loaded into the carrier stage 10 from the outside to the carrier stock 12 or the carrier placement table 14 using the carrier conveying mechanism 11. Additionally, the carrier loading/unloading section 2 transfers the carrier 9 placed on the carrier placement table 14 to the carrier stock 13 or carrier stage 10 using the carrier conveying mechanism 11. The carrier 9 conveyed to the carrier stage 10 is carried out.

The lot forming unit 3 combines the substrates 8 accommodated in one or more carriers 9 to form a lot consisting of a plurality of substrates 8 (for example, 50 sheets) to be processed simultaneously. Additionally, when forming a lot, the lot may be formed so that the surfaces on which the pattern is formed on the surface of the substrate 8 face each other, and the surfaces on which the pattern is formed on the surface of the substrate 8 may all face one side. You may form the lot so that it faces.

This lot forming unit 3 is provided with a substrate transport mechanism 15 that transports a plurality of substrates 8 . Additionally, the substrate transport mechanism 15 can change the posture of the substrate 8 from a horizontal posture to a vertical posture and from a vertical posture to a horizontal posture during transportation of the substrate 8.

Then, the lot forming unit 3 transfers the substrate 8 from the carrier 9 placed on the carrier placing table 14 to the lot placing unit 4 using the substrate transport mechanism 15, and places the lot. The formed substrate 8 is placed in the lot placement unit 4. Additionally, the lot forming unit 3 transfers the lot placed on the lot placing unit 4 to the carrier 9 placed on the carrier placing table 14 using the substrate transport mechanism 15 . In addition, the substrate transport mechanism 15 is a substrate support part for supporting a plurality of substrates 8, and supports the substrates 8 before processing (before transport from the lot transport unit 5). It has two types: a support part and a post-processed substrate support part that supports the substrate 8 after processing (after being transported in the lot transport part 5). This prevents particles, etc. attached to the substrate 8 before processing from transferring to the substrate 8 after processing.

The lot placement unit 4 temporarily places (stands by) the lot being transported between the lot forming unit 3 and the lot processing unit 6 by the lot transfer unit 5 on the lot placement table 16 .

This lot placement unit 4 includes a loading-side lot placement table 17 for placing lots before processing (before being transferred from the lot transfer unit 5), and a lot placement table 17 for placing lots after processing (before being transferred from the lot transfer unit 5). A lot placement table 18 on the unloading side is provided for placing the lots in the rear section. On the loading-in side lot placement table 17 and the unloading-side lot placement table 18, a plurality of substrates 8 for one lot are arranged back and forth in a vertical position.

Then, in the lot placement unit 4, the lot formed in the lot forming unit 3 is placed on the loading side lot placement table 17, and the lot is transferred to the lot processing unit 6 through the lot transfer unit 5. is brought in Furthermore, in the lot placement unit 4, the lot transported from the lot processing unit 6 through the lot transfer unit 5 is placed on the lot placement table 18 on the delivery side, and the lot is placed in the lot forming unit 3. It is sent back.

The lot transport unit 5 transports lots between the lot placement unit 4 and the lot processing unit 6 or within the lot processing unit 6.

This lot transport unit 5 is provided with a lot transport mechanism 19 for transporting lots. The lot transfer mechanism 19 includes a rail 20 arranged along the lot placement unit 4 and the lot processing unit 6, and a moving body that moves along the rail 20 while holding a plurality of substrates 8 ( 21). The mobile body 21 is provided with a substrate holding body 22 capable of advancing and retreating, which holds a plurality of substrates 8 arranged front and rear in a vertical position.

Then, the lot transfer unit 5 receives the lot placed on the loading-side lot placement table 17 to the substrate holding body 22 of the lot transfer mechanism 19, and delivers the lot to the lot processing unit 6. do. Additionally, the lot transfer unit 5 receives the lot processed in the lot processing unit 6 to the substrate holding body 22 of the lot transfer mechanism 19, and transfers the lot to the lot placement table 18 on the delivery side. do. Additionally, the lot transport unit 5 uses the lot transport mechanism 19 to transport lots inside the lot processing unit 6 .

The lot processing unit 6 performs processing such as etching, cleaning, and drying on one lot of a plurality of substrates 8 arranged back and forth in a vertical position.

This lot processing unit 6 includes a drying processing device 23 for drying the substrate 8, a substrate holder cleaning device 24 for cleaning the substrate 8, and a substrate 8. ) A cleaning processing device 25 that performs a cleaning processing and two etching processing devices 26 that perform an etching processing of the substrate 8 are provided in an array.

The drying processing device 23 is provided with a substrate lifting mechanism 28 in the processing tank 27 that can be raised and lowered. A processing gas for drying (IPA (isopropyl alcohol), etc.) is supplied to the treatment tank 27. In the substrate lifting mechanism 28, one lot of a plurality of substrates 8 is held arranged back and forth in a vertical position. The drying processing device 23 receives the lot from the substrate holding body 22 of the lot transfer mechanism 19 to the substrate lifting mechanism 28 and elevates the lot with the substrate lifting mechanism 28, thereby forming a processing tank ( The substrate 8 is dried using the drying process gas supplied to 27). Additionally, the drying processing device 23 transfers the lot from the substrate lifting mechanism 28 to the substrate holding body 22 of the lot transport mechanism 19.

The substrate holding body cleaning processing device 24 is capable of supplying the processing liquid and dry gas for cleaning to the processing tank 29, and providing cleaning treatment to the substrate holding body 22 of the lot transfer mechanism 19. After supplying the liquid, the substrate holding body 22 is cleaned by supplying dry gas.

The cleaning processing device 25 has a processing tank 30 for cleaning and a processing tank 31 for rinsing, and substrate lifting mechanisms 32 and 33 are provided in each processing tank 30 and 31 to be able to raise and lower the substrate. I'm doing it. In the cleaning treatment tank 30, a cleaning treatment liquid (SC-1, etc.) is stored. In the rinsing treatment tank 31, a rinsing treatment liquid (pure water, etc.) is stored.

The etching processing device 26 has a processing tank 34 for etching and a processing tank 35 for rinsing, and substrate lifting mechanisms 36 and 37 are provided in each processing tank 34 and 35 to be able to raise and lower the substrate. I'm doing it. In the etching treatment tank 34, an etching treatment liquid (phosphoric acid aqueous solution) is stored. In the rinsing treatment tank 35, a rinsing treatment liquid (pure water, etc.) is stored.

These cleaning processing devices 25 and etching processing devices 26 have the same configuration. Explaining the etching processing device 26, one lot of a plurality of substrates 8 are held in the substrate lifting mechanisms 36 and 37, arranged back and forth in a vertical position. The etching processing device 26 receives the lot from the substrate holding body 22 of the lot transport mechanism 19 to the substrate lifting mechanism 36 and elevates the lot with the substrate lifting mechanism 36 to process the lot. The substrate 8 is subjected to an etching treatment by immersing it in the etching treatment liquid of (34). Thereafter, the etching processing device 26 transfers the lot from the substrate lifting mechanism 36 to the substrate holding body 22 of the lot transport mechanism 19. Additionally, the etching processing device 26 receives the lot from the substrate holding body 22 of the lot transport mechanism 19 to the substrate lifting mechanism 37 and lifts the lot by using the substrate lifting mechanism 37. The substrate 8 is rinsed by immersing it in the rinsing treatment liquid of the treatment tank 35. Thereafter, the etching processing device 26 transfers the lot from the substrate lifting mechanism 37 to the substrate holding body 22 of the lot transport mechanism 19.

The control unit 7 controls each part of the substrate liquid processing apparatus 1 (carrier loading/unloading unit 2, lot forming unit 3, lot placement unit 4, lot transfer unit 5, lot processing unit 6). Controls the operation of [etc.]

This control unit 7 is, for example, a computer and is provided with a computer-readable storage medium 38. The storage medium 38 stores a program that controls various processes performed in the substrate liquid processing device 1 . The control unit 7 controls the operation of the substrate liquid processing device 1 by reading and executing the program stored in the storage medium 38. Additionally, the program is stored in the computer-readable storage medium 38, and may be installed into the storage medium 38 of the control unit 7 from another storage medium. Examples of the computer-readable storage medium 38 include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.

[Example 1]

In the etching processing device 26 of the substrate liquid processing device 1, the substrate 8 is liquid treated (etched) using an aqueous solution of a chemical (phosphoric acid) of a predetermined concentration as a processing liquid (etching liquid).

As shown in FIG. 2 , the etching processing device 26 includes a liquid processing unit 39 for storing a processing liquid made of an aqueous phosphoric acid solution of a predetermined concentration and processing the substrate 8, and a processing liquid in the liquid processing unit 39. a treatment liquid supply unit 40 for supplying, a pure water supply unit 41 for supplying pure water to dilute the treatment liquid, and a treatment liquid circulation unit 42 for circulating the treatment liquid stored in the liquid treatment unit 39. and a processing liquid discharge section 43 for discharging the processing liquid from the liquid processing section 39.

The liquid processing unit 39 forms an open-top external tank 44 around the upper part of the open-top treatment tank 34, and stores the treatment liquid in the treatment tank 34 and the external tank 44. . In the processing tank 34, the processing liquid for liquid treatment is stored by immersing the substrate 8 using the substrate lifting mechanism 36. The external tank 44 stores the treatment liquid that overflowed from the treatment tank 34 and supplies the treatment liquid to the treatment tank 34 through the treatment liquid circulation unit 42 . Additionally, in the substrate lifting mechanism 36, the plurality of substrates 8 are maintained in a vertically standing position and arranged at intervals in the horizontal direction.

The processing liquid supply unit 40 supplies the liquid processing unit 39 with an aqueous solution of a chemical (phosphoric acid) having a concentration different from that of the processing liquid (lower concentration than the processing liquid). This processing liquid supply unit 40 connects an aqueous solution supply source 45 for supplying an aqueous phosphoric acid solution of a predetermined concentration and a predetermined temperature to the external tank 44 of the liquid processing unit 39 via a flow rate regulator 46. The flow rate regulator 46 is connected to the control unit 7, and is controlled to open/close and flow rate controlled by the control unit 7.

The pure water supply unit 41 supplies pure water to replenish moisture evaporated by heating (boiling) of the treatment liquid. This pure water supply unit 41 connects a pure water supply source 47 for supplying pure water at a predetermined temperature to the external tank 44 of the liquid processing unit 39 through a flow rate regulator 48. The flow rate regulator 48 is connected to the control unit 7, and is controlled to open/close and flow rate controlled by the control unit 7.

The processing liquid circulation unit 42 disposes a processing liquid supply nozzle 49 below the substrate 8 held by the substrate lifting mechanism 36 inside the processing tank 34, and the liquid processing unit 39 A circulation passage 50 is formed between the bottom of the outer tank 44 and the processing liquid supply nozzle 49. In the circulation passage 50, a pump 51, a filter 52, and a heater 53 are provided in that order. The pump 51 and heater 53 are connected to the control unit 7 and are driven and controlled by the control unit 7. Then, the processing liquid circulation unit 42 circulates the processing liquid from the external tank 44 to the processing tank 34 by driving the pump 51 . At that time, the processing liquid is heated to a predetermined temperature by the heater 53.

Additionally, the processing liquid circulation unit 42 forms a concentration measurement flow path 54 between the middle of the circulation flow path 50 (downstream from the heater 53) and the external tank 44. The concentration measurement flow path 54 is provided with an upstream opening/closing valve 55, a concentration sensor 56 (concentration measuring unit), and a downstream opening/closing valve 57 in that order. A cleaning fluid supply unit 58 that supplies a cleaning fluid (here, pure water at room temperature) for cleaning the concentration sensor 56 is connected between the upstream opening and closing valve 55 and the concentration sensor 56. This cleaning fluid supply unit 58 connects a cleaning fluid supply source 59 for supplying cleaning fluid between the upstream on-off valve 55 and the concentration sensor 56 through the supply on-off valve 60. Additionally, a cleaning fluid discharge unit 61 that discharges the cleaning fluid is connected between the concentration sensor 56 and the downstream opening/closing valve 57. This cleaning fluid discharge unit 61 connects a discharge passage 62 communicating with an external drain pipe between the concentration sensor 56 and the downstream on-off valve 57, and connects the discharge passage 62 with a discharge on-off valve ( 63) is being prepared. The upstream on-off valve 55, the downstream on-off valve 57, the supply on-off valve 60, and the discharge on-off valve 63 are connected to the control unit 7 and are controlled to open and close by the control unit 7. Additionally, the concentration sensor 56 is connected to the control unit 7, measures the concentration of the processing liquid flowing through the concentration measurement flow path 54 in response to instructions from the control unit 7, and notifies the concentration to the control unit 7. Additionally, the cleaning fluid discharge unit 61 mainly discharges the cleaning fluid, but also discharges the processing liquid remaining in the concentration measurement flow path 54.

The treatment liquid discharge unit 43 connects a drainage passage 64 communicating with an external drainage pipe to the bottom of the treatment tank 34 of the liquid treatment unit 39, and has an opening/closing valve 65 in the drainage passage 64. is being prepared. The open/close valve 65 is connected to the control unit 7 and is controlled to open and close by the control unit 7 .

In this etching processing apparatus 26, as shown in FIGS. 3 to 5, a plurality of substrates 8 are arranged by the substrate lifting mechanism 36, and the processing liquid stored in the processing tank 34 is It is immersed. The processing liquid is supplied from the processing liquid supply nozzle 49 to the bottom of the processing tank 34 (lower than the substrate 8 ) and rises along the surface of the substrate 8 . As a result, the etching processing device 26 processes the surface of the substrate 8 with a processing liquid.

Here, the substrate lifting mechanism 36 has four substrate holding bodies 67 extending in the horizontal direction attached to the lower end of the arm 66 extending in the vertical direction via a connection plate 68. A lifting and lowering drive unit 69 is connected to the arm 66. The lifting drive unit 69 is connected to the control unit 7 and is controlled by the control unit 7 to drive the lift.

The four substrate holding bodies 67 are arranged at intervals in the horizontal direction (direction perpendicular to the arrangement direction of the substrate 8: the surface direction of the substrate 8). At the top of each substrate holding body 67, substrate holding grooves 70 are formed at intervals in the horizontal direction. Then, the outer peripheral edge of one substrate 8 is held from the lower side by the substrate holding grooves 70 of the four substrate holding bodies 67, so that the plurality of substrates 8 are positioned vertically in the horizontal direction. Keep them arranged at intervals. Each substrate holding body 67 has a lower end 71 pointed downward, and the left and right sides 72 and 73 have a vertical flat surface shape.

In addition, the processing liquid supply nozzle 49 is located below the substrate 8 held by the substrate holding body 67 inside the processing tank 34 in a horizontal direction (a direction perpendicular to the arrangement direction of the substrate 8). There are three arranged at intervals of ]. Each processing liquid supply nozzle 49 has a cylindrical tube body 74 extending along the arrangement direction of the substrate 8 and a cylindrical inner tube 75 accommodated inside the tube body 74.

As shown in FIG. 6, discharge ports 76 (upward discharge) for discharging the processing liquid into the processing tank 34 are formed at intervals in the upper part of the tube body 74 in the arrangement direction of the substrates 8. there is. At the lower part of the inner tube 75, supply ports 77 (discharged downward) for supplying the processing liquid to the tube body 74 are formed at intervals in the arrangement direction of the substrates 8. The discharge port 76 of the pipe body 74 and the supply port 77 of the inner tube 75 are formed to face opposite directions. The discharge port 76 is formed between two substrates 8 aligned and held in the substrate lifting mechanism 36 (between two substrate holding grooves 70 arranged in the substrate holding body 67). Additionally, the supply port 77 is formed between two discharge ports 76 arranged in the tubular body 74.

The discharge port 76 has a first side 78 and a second side 79 formed at intervals in the plane direction (horizontal direction) of the substrate 8 orthogonal to the arrangement direction of the substrate 8, and these first sides 78 It has a third side 80 and a fourth side 81 formed at intervals between the side 78 and the second side 79 in the arrangement direction of the substrate 8. Additionally, the third side 80 and the fourth side 81 are arranged in parallel. Additionally, the upper portion of the outer peripheral surface of the inner tube 75 protrudes upward from the first side 78 and the second side 79.

Here, as shown in Figure 6 (a), the position of the outer edge of the first side 78 is A1, the position of the inner edge is B1, and the position of the center of the tube body 74 is O when viewed from the front cross section. Do it as In addition, an imaginary line extending from the position O of the center of the tubular body 74 to the position B1 of the inner end edge of the first side 78 in the radial direction of the tubular body 74 is indicated by a dashed one-dot line, An imaginary line extending from the position O of the center of the tube body 74 to the position A1 of the outer edge of the first side surface 78 is indicated by a two-dot chain line. In addition, the position B1 of the inner end edge of the first side 78 is virtually extended from the position O of the center of the tube body 74 toward the radial direction of the tube body 74 [the one-dot chain line and the tube body The intersection of the outer circumference of (74)] is set to B2. The first side 78 has the outer end edge positioned at a position B1 of the inner end edge, which is located at a position B2 that extends virtually in the radial direction from the position O of the center of the tubular body 74. It is provided at a position A1 that is open outward toward the surface direction (horizontal direction).

Similarly, as shown in Fig. 6(a), the position of the outer edge of the second side surface 79 is C1 and the position of the inner edge is D1 when viewed from the front cross section. In addition, an imaginary line extending from the position O of the center of the tube body 74 to the position D1 of the inner end edge of the second side surface 79 in the radial direction of the tube body 74 is indicated by a dashed one-dot line, An imaginary line extending from the position O of the center of the tube body 74 to the position C1 of the outer edge of the second side surface 79 is indicated by a two-dot chain line. In addition, the position D1 of the inner end edge of the second side surface 79 is virtually extended from the position O of the center of the tube body 74 toward the radial direction of the tube body 74 [the one-dot chain line and the tube body The intersection of the outer circumference of (74)] is taken as D2. The second side surface 79 has the outer end edge positioned at a position D1 of the inner end edge that is positioned closer to the substrate 8 than the position D2 at which the position D1 is virtually extended in the radial direction from the position O of the center of the tubular body 74. It is provided at a position C1 open outward toward the surface direction (horizontal direction). Additionally, as shown in Fig. 6(a), the interior angle connecting the position A1, the position O, and the position C1 is larger than the interior angle connecting the position B1, the position O, and the position D1.

In this treatment liquid supply nozzle 49, the inner tube 75 is connected to the circulation flow path 50, and as shown in FIG. 6(b), the supply port 77 of the inner tube 75 is directed downward. The treatment liquid is supplied to the inside of the tubular body 74 (a hollow portion formed between the outer periphery of the inner pipe 75 and the inner periphery of the tubular body 74). The treatment liquid spreads and flows from the supply port 77 along the inner circumference of the tube body 74 and the outer circumference of the inner tube 75 in the direction of arrangement of the substrate 8 or in an upward direction perpendicular to it, and flows vertically from the discharge port 76. It is discharged upward. At that time, since the first side 78 and the second side 79 are each open outward toward the surface direction (horizontal direction) of the substrate 8, the processing liquid flows from the discharge port 76 to the substrate 8. It is spread and discharged in the surface direction (horizontal direction). As a result, the speed difference between the flow rate of the processing liquid at the center of the discharge port 76 and the flow rate of the processing liquid at the end of the discharge port 76 (near the first side 78 or the second side 79) becomes smaller. , the processing liquid can be uniformly discharged vertically upward from the discharge port 76. In addition, in the processing liquid supply nozzle 49, both the first side surface 78 and the second side surface 79 are opened outward toward the surface direction (horizontal direction) of the substrate 8. Without being limited to this, only one of the first side 78 or the second side 79 may be opened outward toward the surface direction (horizontal direction) of the substrate 8.

As shown in Fig. 6(a) and Fig. 7(a), the discharge port 76 has an opening angle of the first side 78 and the second side 79 (the first side 78 and the second side 79). The angle when the side surfaces 79 are virtually crossed may be less than 180 degrees, but as shown in FIG. 7(b), the opening angle of the first side 78 and the second side 79 is 180 degrees. It may be as large as possible, and as shown in Fig. 7(c), the opening angle of the first side 78 and the second side 79 may be made larger than 180 degrees. By opening the first side 78 and the second side 79 by more than 180 degrees, the processing liquid discharged from the vicinity of the discharge port 76 can be well diffused toward the surface direction (horizontal direction) of the substrate 8. . Additionally, the discharge port 76 can be easily formed by setting the opening angle of the first side 78 and the second side 79 to 180 degrees.

In particular, in the treatment liquid supply nozzle 49, the supply port 77 of the inner tube 75 is formed to face in the opposite direction to the discharge port 76 of the tube body 74, so that the inside of the tube body 74 [ It can be dispersed toward the surface direction (horizontal direction) of the substrate 8 in the hollow portion formed between the outer circumference of the inner tube 75 and the inner circumference of the tube body 74, and the flow rate of the processing liquid can be further uniformized. . In addition, in the processing liquid supply nozzle 49, since the supply port 77 is formed between the plurality of discharge ports 76, the inside of the pipe body 74 (the outer periphery of the inner pipe 75 and the pipe body 74) It can be dispersed in the arrangement direction of the substrate 8 in the hollow portion formed between the inner periphery, and the flow rate of the processing liquid can be further uniformized. In addition, in the processing liquid supply nozzle 49, the flow rate of the processing liquid discharged from the discharge port 76 can be increased by protruding the inner pipe 75 outward from the first side 78 or the second side 79. It is being equalized.

In addition, the processing liquid supply nozzle 49 is disposed between the substrate holding body 67 holding the substrate 8, and is located at the center of the discharge port 76 (the first side 78 and the second side side) in plan view. The substrate holding body 67 is not positioned in the discharge direction of the processing liquid (here, vertically upward) in the center portion of . As a result, the processing liquid discharged from the discharge port 76 is prevented from colliding with the substrate holding body 67 and the upward flow of the processing liquid is disturbed, and the processing liquid can be uniformly raised into the inside of the processing tank 34. there is. In addition, when the side surfaces 72 and 73 of the substrate holding body 67 are viewed from a planar view, the discharge direction (vertical direction) of the processing liquid is at the center of the discharge port 76 (the center of the first side 78 and the second side surface). ), or by forming the lower end of the substrate holder 67 pointed downward, it is possible to prevent the upward flow of the processing liquid from disturbing the substrate holder 67. In addition, when the three processing liquid supply nozzles 49 are viewed from the top, the discharge direction (vertically upward) of the processing liquid at the center of each discharge port 76 (center portion of the first side 78 and the second side 78) is They are placed so that they do not cross each other. As a result, the processing liquid discharged from the discharge port 76 of each processing liquid supply nozzle 49 is prevented from colliding with each other and the upward flow of the processing liquid is disturbed, and the processing liquid is distributed uniformly inside the treatment tank 34. It can be raised.

The substrate liquid processing device 1 is configured as described above, and each section (carrier loading/unloading section 2, lot forming section) is controlled by the control section 7 according to the substrate liquid processing program stored in the storage medium 38, etc. (3), lot placement unit 4, lot transfer unit 5, lot processing unit 6, etc.], thereby processing the substrate 8.

When etching the substrate 8 using this substrate liquid processing device 1, an aqueous phosphoric acid solution of a certain concentration and a certain temperature is supplied to the liquid processing section 39 by the processing liquid supply section 40 of the etching processing device 26. The processing liquid is supplied and heated to a predetermined concentration and temperature by the processing liquid circulation unit 42 to generate a processing liquid, and the processing liquid is stored in the liquid processing unit 39. At that time, since moisture evaporates by heating and the concentration of the processing liquid increases, an amount of pure water corresponding to the amount of moisture evaporated by heating is supplied to the liquid processing unit 39 through the pure water supply unit 41, Dilute the treatment solution with pure water. Then, the substrate 8 is immersed by the substrate lifting mechanism 36 in the processing tank 34 in which a processing liquid of a predetermined concentration and a predetermined temperature is stored, thereby performing an etching process (liquid treatment) on the substrate 8 with the processing liquid. .

Thereafter, the control unit 7 measures the time for which the substrate 8 was immersed in the processing liquid using a built-in timer, and when a predetermined time or more has elapsed, the liquid processing of the substrate 8 is terminated.

When treating the substrate 8 with a liquid, the processing liquid is supplied from the processing liquid supply nozzle 49 to the bottom of the processing tank 34 . The processing liquid is discharged from the discharge port 76 of the processing liquid supply nozzle 49 and rises between the arrayed substrates 8 along the substrates 8 . In the substrate liquid processing apparatus 1, since the discharge port 76 is open to the outside, the processing liquid can be discharged by spreading outward from the center of the processing liquid supply nozzle 49 in the radial direction. In particular, in the processing liquid supply nozzle 49, the discharge port 76 is formed to be open by more than 180 degrees, so that the processing liquid can be discharged by spreading outward by more than 180 degrees from the center of the processing liquid supply nozzle 49. . Therefore, the speed difference between the flow rate of the processing liquid at the center of the discharge port 76 and the flow rate of the processing liquid at the end of the discharge port 76 (near the first side 78 or the second side 79) becomes small. , the processing liquid can be uniformly discharged vertically upward from the discharge port 76. As a result, in the substrate liquid processing apparatus 1, the upward current flowing along the substrate 8 can be made to flow at a uniform speed, and the surface of the substrate 8 can be treated uniformly with the processing liquid.

In addition, in the substrate liquid processing apparatus 1, the flow rate of the processing liquid discharged from the processing liquid supply nozzle 49 can be made uniform, so that the flow rate of the processing liquid discharged from the processing liquid supply nozzle 49 can be increased. You can. As a result, in the substrate liquid processing apparatus 1, the speed (time) at which the processing liquid inside the processing tank 34 is replaced by the circulation passage 50 can be increased (shortened), By shortening the processing time, the throughput of the substrate liquid processing device 1 can be improved. Additionally, in the substrate liquid processing apparatus 1, the flow rate of the processing liquid discharged from the processing liquid supply nozzle 49 can be uniformized, so the processing liquid supply nozzle 49 can be brought closer to the substrate 8. , the substrate liquid processing apparatus 1 can be miniaturized by miniaturizing the processing tank 34.

In the substrate liquid processing apparatus 1, as described above, an upward flow flowing along the substrate 8 can be made to flow at a uniform speed. Additionally, by increasing the flow rate of the processing liquid rising inside the processing tank 34, the surface of the substrate 8 can be treated uniformly. If there is a risk that the processing liquid may remain inside the treatment tank 34, the surface of the substrate 8 may be evenly distributed by the treatment liquid. There is a risk that it may not be handled properly. To solve such a problem, air bubbles may be supplied from below the substrate 8 inside the treatment tank 34. When air bubbles are supplied from below the substrate 8, the bubbles rise upward from below the substrate 8 together with the processing liquid. The bubbles rise at a faster rate than the rise of the treatment liquid due to the action of buoyancy. Moreover, the bubbles do not rise linearly upward, but rise while randomly floating and diffusing due to the action of resistance within the treatment liquid. As a result, even when the flow rate of the processing liquid rising inside the processing tank 34 is low, retention of the processing liquid that was partially occurring inside the processing tank 34 is eliminated, and the substrate 8 is removed by the processing liquid. The surface can be treated uniformly.

Bubbles can be generated by boiling the processing liquid discharged from the processing liquid supply nozzle 49 by heating it with the heater 53 of the processing liquid circulation unit 42 . Therefore, in the substrate liquid processing apparatus 1, the processing liquid circulation unit 42 can also function as a bubble supply unit for supplying bubbles from below the substrate 8. In this way, when heating the processing liquid to generate bubbles, there is no need to provide a separate bubble supply unit.

Bubbles can be generated, for example, by heating the processing liquid to a temperature higher than the boiling point with the heater 53 provided in the circulation passage 50. In this case, the bubbles are supplied from the processing liquid supply nozzle 49 to the lower side of the substrate 8 through the circulation passage 50 on the downstream side of the heater 53. Therefore, if quartz glass or the like is used as a material for the processing liquid supply nozzle 49 or the circulation passage 50, there is a risk of damage due to air bubbles. Therefore, it is more preferable that the bubbles are in a liquid form up to the processing liquid supply nozzle 49, and are vaporized into gaseous form when discharged from the processing liquid supply nozzle 49. Since the processing liquid is flowing inside the circulation flow path 50, the pressure (flow pressure) is higher than the pressure inside the processing tank 34 due to the flow. Therefore, even if the processing liquid is heated to the same temperature, the processing liquid becomes liquid under a flow pressure higher than the internal pressure of the treatment tank 34, and is processed under an internal pressure of the treatment tank 34 lower than the flow pressure. Part of the liquid may vaporize and generate bubbles. Accordingly, the processing liquid is heated to a temperature below the boiling point by the heater 53, and the processing liquid is discharged from the processing liquid supply nozzle 49 in a liquid form. At the time of discharge, bubbles form inside the processing liquid in the processing tank 34. can occur. The temperature at which the processing liquid is heated changes as the internal pressure (flow pressure) of the circulation passage 50 varies depending on the type, concentration, or flow rate of the processing liquid. Therefore, the temperature for heating the processing liquid is adjusted to appropriately change the type, concentration, or flow rate of the processing liquid. Conduct a practical experiment to determine the optimal temperature. Additionally, bubbles can be generated by heating the processing liquid to a temperature above the boiling point with the heater 53, but the method is not limited to changing the temperature at which the processing liquid is heated. For example, when supplying an amount of pure water corresponding to the amount of moisture evaporated by heating to the liquid processing unit 39 through the pure water supply unit 41 without changing the temperature of the heater 53, by increasing the supply amount of pure water, Bubbles may be generated by lowering the concentration of the treatment liquid and lowering the boiling point. Bubbles can be generated by controlling at least one of the flow pressure of the processing liquid, the temperature of the processing liquid, and the concentration of the processing liquid. At that time, since the boiling point of the treatment liquid changes depending on the fluctuation of atmospheric pressure, an atmospheric pressure sensor S that measures atmospheric pressure is provided outside the treatment tank 34, and the measured atmospheric pressure (signal from the atmospheric pressure sensor S) is used. By correcting the temperature at which the processing liquid is heated and the concentration of the processing liquid according to the It can be used at a higher flow pressure, so it can be used as a liquid treatment solution, and bubbles can be generated stably, preventing damage to quartz glass, etc., due to bubbles. It is preferable that the bubbles are generated near the discharge port 76 of the processing liquid discharge nozzle 49. However, in the processing liquid discharge nozzle 49 formed of the double pipe, the bubbles are generated near the supply port 77 of the inner pipe 75. It may be generated from . In addition, the processing liquid is heated to a temperature above the boiling point by the heater 53 provided in the circulation passage 50, so that it becomes liquid up to the processing liquid supply nozzle 49, and becomes gaseous when discharged from the processing liquid supply nozzle 49. The method of generating bubbles by vaporizing is not limited to the shape of the discharge port 76 formed in the processing liquid supply nozzle 49 of the present invention.

In the etching processing apparatus 26 according to Example 1, bubbles are generated by heating the processing liquid, but the generation of bubbles is not limited to this. Other methods for generating bubbles will be described below. In addition, in the following description, those having the same configuration as the etching device 26 according to the first embodiment are given the same reference numerals and their descriptions are omitted.

[Example 2]

In the etching processing device 82 shown in FIG. 8, a bubble supply section 83 is provided in the intermediate portion on the downstream side of the circulation passage 50 of the processing liquid circulation section 42. In this bubble supply unit 83, a gas supply source 84 for supplying a gas forming bubbles (for example, an inert gas such as nitrogen gas) is connected to the circulation flow path 50 through a flow rate regulator 85. The gas supplied from the gas supply source 84 becomes bubbles and is supplied together with the processing liquid to the lower side of the substrate 8 from the processing liquid supply nozzle 49 through the circulation passage 50. In this case, since the bubbles pass through the circulation passage 50, the processing liquid supply nozzle ( It is desirable to connect the gas supply unit 83 near 49). In the treatment liquid discharge nozzle 49 formed of the double pipe, the bubble supply unit 83 may be directly connected to the inner pipe 75. In addition, since bubbles flow inside the circulation passage 50 or the treatment tank 34 together with the treatment liquid, it is preferable to supply gas heated to a temperature that does not lower the temperature of the treatment liquid, and further react with the treatment liquid. Alternatively, it is preferable to supply a type of gas that does not dissolve in the treatment liquid.

[Example 3]

In the etching processing device 86 shown in FIG. 9, a bubble supply section 87 is provided in a midway portion on the upstream side of the circulation passage 50 of the processing liquid circulation section 42. The bubble supply unit 87 connects a liquid supply source 88 for supplying a liquid (for example, alcohol) that becomes bubbles by heating (boiling) to the circulation passage 50 through a flow rate regulator 89. The liquid supplied from the liquid supply source 88 is heated by the heater 53 provided in the circulation passage 50 and vaporizes by boiling, becomes bubbles, and flows from the processing liquid supply nozzle 49 through the circulation passage 50 to the substrate ( It is supplied along with the treatment liquid to the lower part of 8). In this case as well, since bubbles flow together with the treatment liquid inside the circulation passage 50 or the treatment tank 34, it is preferable to supply a type of liquid that does not react with or dissolve in the treatment liquid. In this case, the liquid can be heated together with the processing liquid using the heater 53 for heating the processing liquid provided in the circulation passage 50, but a separate heater for heating the liquid is provided in the bubble supply unit 87 to circulate the liquid. The liquid supply unit 88 may be connected as close to the processing liquid supply nozzle 49 as possible on the downstream side of the pump 51, filter 52, or heater 53 provided in the flow path 50. In this case as well, the temperature for heating the liquid is to appropriately change the type, concentration, flow rate, etc. of the liquid because the internal pressure (flow pressure) of the circulation passage 50 changes depending on the type, concentration, flow rate, etc. of the liquid. Conduct preliminary experiments to determine the optimal temperature. In addition, since the boiling point of the liquid changes depending on the fluctuation of atmospheric pressure, an atmospheric pressure sensor S that measures atmospheric pressure is provided outside the treatment tank 34, and the measured atmospheric pressure (signal from the atmospheric pressure sensor S) You may correct the heating temperature.

[Example 4]

In the etching devices 82 and 86 according to the above-mentioned embodiments 2 and 3, air bubbles are supplied from the discharge port 76 of the processing liquid supply nozzle 49. However, this is not limited to this. The air bubbles may be supplied from a position different from the discharge port 76.

For example, the bubble supply unit 91 of the etching processing apparatus 90 shown in FIG. 10 arranges the bubble supply nozzle 92 below the processing liquid supply nozzle 49 inside the processing tank 34, A gas supply source 93 for supplying gas forming bubbles (for example, an inert gas such as nitrogen gas) to the supply nozzle 92 is connected through a flow rate regulator 94. In the bubble supply nozzle 92, like the processing liquid supply nozzle 49, a bubble discharge port is formed between two substrates 8 arranged and held on the substrate support 67. The gas supplied from the gas supply source 93 becomes bubbles and is supplied from the bubble supply nozzle 92 to the bottom of the substrate 8 separately from the processing liquid. Since bubbles flow inside the treatment tank 34 together with the treatment liquid, it is more preferable to supply gas heated to a temperature that does not lower the temperature of the treatment liquid, and also does not react with or dissolve in the treatment liquid. It is desirable to supply a type of gas that is not The bubble supply nozzle 92 is preferably disposed below the discharge port 76 of the processing liquid supply nozzle 49 so as not to impede the rising of the processing liquid. In addition, the bubble supply nozzle 92 is positioned so that the discharged bubbles are not prevented from rising by the processing liquid supply nozzle 49 or the substrate support 67 when viewed from the top. It is more preferable to place it in a location away from. Additionally, the bubble supply nozzle 92 may be separate from the processing liquid supply nozzle 49 or may be integrated with the processing liquid supply nozzle 49. In addition, the bubble supply unit 91, like the bubble supply unit 87 according to the third embodiment, can also use a liquid (for example, alcohol) that becomes bubbles by heating (boiling).

[Variation example]

The above description shows the form in which the present invention is implemented, and modifications can be made without departing from the spirit of the present invention.

For example, as shown in FIG. 4 , each discharge port 76 is formed in the processing liquid supply nozzle 49 between two substrates 8 arranged and held on the substrate support 67 . When a lot is formed by the lot forming unit 3 so that the surface of the substrate 8 with the pattern is all oriented in the same direction, the processing liquid or air bubbles discharged from each discharge port 76 are applied to each substrate ( It is preferable because it flows along the pattern formation surface (surface to be processed) of 8). However, when a lot is formed in the lot forming unit 3 so that the surfaces on which the pattern is formed on the surface of the substrate 8 face each other, processing liquid or air bubbles are unnecessarily formed on the back side of the pattern formation surface of the substrate 8. flows. Therefore, in the processing liquid supply nozzle 95 shown in FIG. 11, every other discharge port 96 is formed between the two substrates 8 arranged and held on the substrate support 67, so that the opposing substrates 8 are discharged. Processing liquid or bubbles may be discharged onto the pattern formation surface (surface to be treated).

In addition, in the substrate lifting mechanism 34 shown in FIG. 4, the gap between the arm 66 or the connecting plate 68 and the substrate 8 is wider than the gap between the substrates 8, so that the arm ( 66) or the state of the processing liquid or bubbles flowing along the surface of the substrate 8 closest to the connecting plate 68 and the other substrates 8 are different. Therefore, as shown in FIG. 12, a shielding plate 97 of the same shape as the substrate 8 is provided at a position opposite to the substrate 8 located at the extreme end at a distance equal to the distance between the substrates 8. You may do so. As a result, the processing liquid or bubbles can be supplied to all substrates 8 in an equal state.

In addition, in the above description, the case where the present invention is applied to the etching processing device 26 of the substrate liquid processing device 1 has been described, but the present invention is not limited to this and can be used to process the substrate 8 in the cleaning processing device 25 or the like. The present invention can also be applied to a liquid treatment device.

1: Substrate liquid processing device
8: substrate
34: treatment tank
49: Treatment liquid supply nozzle
74: pipe body
76: discharge port
78: first side
79: second side

Claims (17)

A treatment tank that processes a plurality of substrates by immersing them in an arrayed treatment solution;
A processing liquid supply nozzle disposed below the substrate inside the processing tank and forming a discharge port for discharging the processing liquid into a tube body extending along the arrangement direction of the substrate.
To have,
The discharge port is,
A first side and a second side are formed at intervals in a horizontal direction perpendicular to the arrangement direction of the substrate, and an outer edge of one or both of the first side and the second side is an inner edge. It is provided at a position that is open outward in the horizontal direction rather than a position extending radially from the center of the pipe body,
The discharge port is open between the first side and the second side and discharges the processing liquid upward through the first side and the second side. A treatment tank that processes a plurality of substrates by immersing them in an arrayed treatment solution;
A processing liquid supply nozzle disposed below the substrate inside the processing tank and forming a discharge port for discharging the processing liquid into a tube body extending along the arrangement direction of the plurality of substrates.
To have,
The discharge port is,
A first side and a second side are formed at intervals in a horizontal direction perpendicular to the arrangement direction of the substrate, and the opening angle between the first side and the second side is open by more than 180 degrees,
The substrate liquid processing device, wherein the discharge port discharges the processing liquid upward through a space between the first side and the second side. The discharge port according to claim 1 or 2, wherein an inner tube for supplying the treatment liquid is accommodated inside the tube body, and a supply port for supplying the treatment liquid from the inner tube to the tube body is formed in the tube body. A substrate liquid processing device characterized in that it is formed facing in the opposite direction. The substrate liquid processing device according to claim 3, wherein the discharge ports are respectively disposed between the plurality of substrates arranged, and the supply ports are respectively disposed between the juxtaposed discharge ports. The method according to claim 1 or 2, wherein an inner tube for supplying the treatment liquid is accommodated inside the tube body, and an outer peripheral surface of the inner tube protrudes outward from either or both of the first side and the second side. A substrate liquid processing device characterized in that The method according to claim 1 or 2, wherein a plurality of processing liquid supply nozzles are provided inside the treatment tank, and the treatment liquid is discharged in a direction at the center of the first side and the second side of each discharge port. A substrate liquid processing device characterized by being arranged in parallel so as not to intersect each other. The substrate liquid according to claim 1 or 2, wherein a plurality of processing liquid supply nozzles are disposed inside the processing tank between a plurality of substrate holding bodies provided to maintain the substrate in an aligned state. processing unit. 8. The substrate liquid according to claim 7, wherein the side surface of the substrate holding body is formed parallel to the discharge direction of the processing liquid at the center of the first side and the second side of the discharge port so as not to intersect. processing unit. The substrate liquid processing apparatus according to claim 1 or 2, further comprising a bubble supply unit for supplying bubbles from below the substrate within the treatment tank. The substrate liquid processing device according to claim 9, wherein the bubble supply unit discharges bubbles together with the processing liquid from the processing liquid supply nozzle. The substrate liquid processing apparatus according to claim 9, wherein the bubbles are in a liquid form at the flow pressure of the processing liquid discharged from the processing liquid supply nozzle. The substrate liquid processing apparatus according to claim 9, wherein the bubbles are generated by boiling the processing liquid. The substrate liquid processing apparatus according to claim 9, wherein the bubbles are generated by controlling at least one of the flow pressure of the processing liquid, the temperature of the processing liquid, and the concentration of the processing liquid. 14. The substrate liquid treatment according to claim 13, wherein an atmospheric pressure sensor is provided outside the treatment tank, and the temperature or concentration of the processing liquid that generates the bubbles is corrected according to a signal obtained from the atmospheric pressure sensor. Device. A substrate liquid treatment method for liquid treating a substrate using the substrate liquid treatment device according to claim 1,
A substrate liquid processing method characterized in that the processing liquid is discharged from the processing liquid supply nozzle in a manner that spreads outward from the center of the processing liquid supply nozzle in a radial direction. A substrate liquid treatment method for liquid treating a substrate using the substrate liquid treatment device according to claim 2,
A substrate liquid treatment method, characterized in that the processing liquid is discharged from the processing liquid supply nozzle in a manner that spreads outward by more than 180 degrees from the center of the processing liquid supply nozzle. The substrate liquid treatment method according to claim 15 or 16, wherein air bubbles are supplied from below the substrate.

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