TW201938275A - Substrate processing device, substrate processing method, and computer-readable storage medium - Google Patents

Abstract

This disclosure describes a substrate processing device which can achieve greater uniformity in the supply width of a process liquid that is supplied selectively to the peripheral section of a substrate, and can suppress unevenness in the supply of the process liquid in the circumferential direction of the substrate. The substrate processing device of the invention comprises a rotating holding section which holds and rotates a substrate, a supply section which supplies a process liquid from a nozzle onto a peripheral section of a surface, and a control section. The control section controls the rotating holding section so as to rotate the substrate, and when the process liquid discharged from the nozzle is being supplied to the portion of the peripheral section closer to the center of the substrate, controls the supply section so that the direction of discharge of the process liquid from the nozzle points in the radial direction and is directed outward when viewed from above, whereas when the process liquid being discharged from the nozzle is supplied to the portion of the peripheral section closer to the periphery of the substrate, controls the supply section so that the direction of discharge of the process liquid from the nozzle points in the axial direction and is directed in the forward rotation direction when viewed from above.

Description

Substrate processing device, substrate processing method, and computer-readable recording medium

The disclosure of the present invention relates to a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium.

Patent Document 1 discloses a technique for manufacturing a semiconductor device by finely processing a substrate (for example, a semiconductor wafer). The coating liquid is ejected from the coating liquid nozzle while the coating liquid nozzle is directed horizontally on the edge portion of the substrate. The photoresist film can be selectively formed on the edge portion of the substrate by moving.
[Xizhi technical literature]
[Patent Literature]

Patent Document 1: Japanese Patent Application Laid-Open No. 2014-110386

[Problems to be Solved by the Invention]

The disclosure of the present invention describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium, which can make the supply width of the processing liquid selectively supplied to the edge portion of the substrate more uniform, and can suppress the substrate The supply of the processing liquid in the circumferential direction is uneven.
[Technical means to solve the problem]

[1] A substrate processing apparatus according to an aspect of the present invention includes: a rotation holding portion that holds and rotates a substrate; a supply portion configured to supply a processing liquid from a nozzle located on a surface side of the substrate to an edge portion of the surface; and Control department. The control unit performs the following steps: controlling the rotation holding unit to rotate the substrate; and when the processing liquid ejected from the nozzle is supplied to the edge portion near the center of the substrate, the control unit controls the supply unit so that the The processing liquid is sprayed from the nozzle in such a manner that the spraying direction of the processing liquid is outward along the radial direction of the substrate; When viewed from above, the processing liquid is ejected from the nozzle in such a manner that the discharge direction of the processing liquid from the nozzle is directed to the forward rotation direction of the substrate.

On the other hand, if the processing liquid is discharged from the nozzle such that the processing liquid is discharged from the nozzle in the radial direction of the substrate when viewed from above, the velocity vector of the processing liquid discharged from the nozzle is decomposed into In the case of the radial direction of the substrate and the direction (rotation direction) orthogonal thereto, the radial component exceeds the rotation direction component. Therefore, the processing liquid easily and quickly flows toward the edge of the substrate, so that the processing liquid is not easily disturbed at the position where the processing liquid reaches the surface of the substrate. Therefore, the liquid arrival position of the processing liquid is likely to become constant. As a result, the uniformity of the supply width of the processing liquid tends to increase. On the other hand, the processing liquid does not easily diffuse in the circumferential direction of the substrate. Therefore, there is a tendency that uneven supply of the processing liquid tends to occur in the circumferential direction of the substrate.

On the other hand, if the processing liquid is ejected from the nozzle such that the processing liquid is ejected from the nozzle in a forward rotation direction of the substrate when viewed from above, the velocity vector of the processing liquid ejected from the nozzle is decomposed into In the case of the radial direction of the substrate and the direction (rotational direction) orthogonal thereto, the rotational direction component exceeds the radial component. Therefore, the processing liquid easily diffuses in the circumferential direction of the substrate. Therefore, there is a tendency that uneven supply of the processing liquid does not easily occur in the circumferential direction of the substrate. On the other hand, when the processing liquid diffuses in the circumferential direction of the substrate, compared with the center side of the substrate, a larger centrifugal force acts on the processing liquid on the edge side, so the flow velocity of the center side of the substrate in the processing liquid becomes slower. , The flow velocity of the edge side of the substrate in the processing liquid becomes faster. Therefore, the processing liquid tends to stay in the center side of the substrate. As a result, the uniformity of the supply width of the processing liquid tends to be easily reduced.

However, according to the substrate processing apparatus of item 1, when the processing liquid discharged from the nozzle is supplied to the edge portion near the center of the substrate, the direction of the processing liquid from the nozzle is viewed along the substrate when viewed from above. The processing liquid is sprayed from the nozzle radially outward; when the processing liquid sprayed from the nozzle is supplied to the edge portion near the edge of the substrate, the direction of spraying the processing liquid from the nozzle toward the substrate when viewed from above The processing liquid is ejected from the nozzle in a forward rotation manner. Therefore, the uniformity of the supply width of the processing liquid is increased, and the uneven supply of the processing liquid is less likely to occur.

[2] In the substrate processing apparatus described in the above item 1, the supply unit may be further configured to change the attitude of the nozzle; the control unit performs the following steps: the processing liquid ejected from the nozzle is near the center of the substrate toward the edge portion In the case of supply, the supply unit is controlled to adjust the attitude of the nozzle so that the processing liquid from the nozzle is ejected in the radial direction of the substrate when viewed from above, and the processing liquid is discharged from the nozzle; In the case where the processing liquid is supplied to the edge portion near the edge of the substrate, the supply portion is controlled to adjust the attitude of the nozzle so that the direction of discharge of the processing liquid from the nozzle when viewed from above is in the direction of rotation of the substrate and toward the direction of rotation , And spray the processing liquid from the nozzle. In this case, by changing the attitude of one nozzle, the effect of the substrate processing apparatus described in the first item can be obtained by using only one nozzle.

[3] In the substrate processing apparatus described in the above item 2, the control unit can control the supply unit to adjust the attitude of the nozzle so that the angle of the processing liquid ejected from the nozzle on the surface of the substrate becomes constant. In this case, even if the attitude of the nozzle is changed, the amount of change in the liquid arrival position of the processing liquid toward the surface of the substrate is suppressed. Therefore, the processing liquid can be more uniformly supplied to the edge portion.

[4] The substrate processing apparatus described in the second or third item may further include a detection unit that detects the in-plane shape of the edge portion; a control unit that controls the supply unit based on the in-plane shape detected by the detection unit. Adjust the attitude of the nozzle. In this case, the nozzle is adjusted to an attitude suitable for the in-plane shape of the edge portion. Therefore, even if the edge portion of the substrate is warped, the processing liquid can be more uniformly supplied to the edge portion.

[5] In the substrate processing apparatus described in any one of items 1 to 4, the control unit may control the supply unit to cause the nozzle to perform a sweeping operation in which the nozzle moves from the edge side of the edge portion toward the center side, Alternatively, the nozzle performs a sweeping operation in which the nozzle is moved from the center side of the edge portion toward the edge side, and the processing liquid is continuously ejected from the nozzle. In this case, the processing liquid from the nozzle is not interrupted, and the processing liquid is continuously supplied spirally to the edge portion. Therefore, the processing liquid ejected from the nozzle does not easily overlap on the surface of the substrate. Therefore, it is possible to further suppress uneven supply of the processing liquid.

[6] A substrate processing method according to another aspect of the present invention includes the steps of: rotating the substrate; and supplying the processing liquid ejected from a nozzle located above the substrate to the edge of the surface of the substrate near the center of the substrate. In this case, the processing liquid from the nozzle is discharged from the nozzle so that the processing liquid is ejected from the nozzle outward when viewed from above; and the processing liquid discharged from the nozzle is near the substrate toward the edge portion. In the case of supply at the edge, the processing liquid is discharged from the nozzle so that the discharge direction of the processing liquid from the nozzle is directed to the forward rotation direction of the substrate when viewed from above. In this case, it is possible to obtain the same function and effect as those of the substrate processing apparatus of the first item.

[7] In the method described in item 6, ejecting the processing liquid from the nozzle may include the following steps: When the processing liquid ejected from the nozzle is supplied to the edge portion near the center of the substrate, the attitude of the nozzle is adjusted When the ejection direction of the processing liquid from the nozzle is viewed from above, the processing liquid is ejected from the nozzle in a state in which the processing liquid from the nozzle is directed outward, and the processing liquid ejected from the nozzle is directed toward the edge portion near the edge of the substrate In the case of supply, the processing liquid is discharged from the nozzle while the attitude of the nozzle is adjusted so that the discharge direction of the processing liquid from the nozzle faces the clockwise rotation direction of the substrate when viewed from above. In this case, the same effect as that of the substrate processing apparatus of the second item is obtained.

[8] In the method described in item 7, discharging the processing liquid from the nozzle may include adjusting the attitude of the nozzle so that the angle of the processing liquid discharged from the nozzle on the surface of the substrate becomes constant, and discharging the processing from the nozzle. liquid. In this case, the same effect as that of the substrate processing apparatus of the above item 3 is obtained.

[9] The method described in item 7 or item 8 above, may further include detecting the in-plane shape of the edge portion; and ejecting the processing liquid from the nozzle includes: adjusting the attitude of the nozzle based on the detected in-plane shape, and removing the nozzle from the nozzle. Spit the treatment liquid. In this case, the same function and effect as those of the substrate processing apparatus of the above item 4 are obtained.

[10] In the method according to any one of the above-mentioned items 6 to 9, ejecting the treatment liquid from the nozzle may include a sweep-in operation of moving the nozzle to the center from the edge side of the edge portion, or The nozzle performs a sweeping operation in which the nozzle is moved from the center side of the edge portion toward the edge side, and the processing liquid is continuously ejected from the nozzle. In this case, the same effect as that of the substrate processing apparatus of the above-mentioned item 5 is obtained.

[11] The computer-readable recording medium according to another aspect of the present invention records a program for causing the substrate processing apparatus to execute the substrate processing method according to any one of the above items 6 to 10. A computer-readable recording medium according to another aspect of the present invention can obtain the same effect as the substrate processing method described above. In this manual, the computer-readable recording medium includes non-transitory computer recording medium (non-transitory computer recording medium) (for example, various main memory devices or auxiliary memory devices), and transmission signals ( transitory computer recording medium (e.g., data signals that can be provided over a network).
[Effect of the present invention]

The substrate processing device, substrate processing method, and computer-readable recording medium disclosed according to the present invention can make the coating width of the edge coating film selectively formed on the edge portion of the substrate more uniform, and can suppress the circumferential direction of the substrate Unevenness of the edge coating film.

The embodiments of the present invention disclosed below are only examples for explaining the present invention, so the present invention should not be limited to the following. In the following description, the same reference numerals are used for the same elements or elements having the same function, and redundant descriptions are omitted.

[Substrate processing system]
As shown in FIG. 1, the substrate processing system 1 (substrate processing apparatus) includes a coating and developing apparatus 2 (substrate processing apparatus) and a controller 10 (control unit). The substrate processing system 1 is provided with an exposure device 3. The exposure apparatus 3 includes a controller (not shown) that can communicate with the controller 10 of the substrate processing system 1. The exposure device 3 is configured to transfer and receive the wafer W (substrate) between the coating and developing device 2 and perform an exposure process (pattern exposure) of a photosensitive photoresist film formed on the surface Wa (refer to FIG. 4 and the like) of the wafer W. ). Specifically, an energy ray is selectively irradiated to a part to be exposed of a photosensitive photoresist film (photosensitive film) by a method such as liquid immersion exposure. Examples of the energy rays include ArF excimer laser, KrF excimer laser, g-ray, i-ray, and extreme ultraviolet (EUV: Extreme Ultraviolet).

The coating and developing device 2 is subjected to a process of forming a photoresist film R (refer to FIG. 4 and the like) on the surface Wa of the wafer W before performing the exposure processing of the exposure device 3. The photoresist film R includes a photosensitive photoresist film and a non-photosensitive photoresist film. The coating and developing device 2 is subjected to the exposure processing of the photosensitive photoresist film of the exposure device 3, and then the development process of the photosensitive photoresist film is performed.

The wafer W may have a circular plate shape or a plate shape other than a circle such as a polygon. The wafer W may have a notch portion in which a part thereof is cut out. The notch portion may be, for example, a notch (a groove such as a U-shape or a V-shape) or a straight portion (a so-called orientation plane) extending linearly. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, a FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the wafer W may be, for example, about 200 mm to 450 mm.

As shown in FIGS. 1 to 3, the coating and developing device 2 includes a carrier block 4, a processing block 5, and an interface block 6. The vehicle block 4, the processing block 5, and the interface block 6 are arranged side by side in the horizontal direction.

As shown in FIGS. 1 and 3, the carrier block 4 includes a carrier station 12 and a loading / unloading unit 13. The carrier station 12 supports a plurality of carriers 11. The carrier 11 stores at least one wafer W in a sealed state. An opening / closing frame (not shown) is provided on the side surface 11 a of the carrier 11 to allow the wafer W to be moved in and out. The carrier 11 has its side surface 11 a facing the loading / unloading unit 13 and is detachably installed on the loading station 12.

The loading / unloading unit 13 is located between the carrying station 12 and the processing block 5. The loading / unloading unit 13 includes a plurality of opening / closing openings 13a. When the carrier 11 is placed on the carrier station 12, the opening and closing 扉 of the carrier 11 is in a state facing the opening and closing 扉 13 a. By opening the opening / closing 扉 13 a and the opening / closing 侧面 of the side surface 11 a at the same time, the inside of the carrier 11 and the inside of the carry-in / out portion 13 are communicated. The carrying-in and carrying-out section 13 includes a transfer arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and carries it to the processing block 5, and receives the wafer W from the processing block 5 and returns to the carrier 11.

The processing block 5 includes unit processing blocks 14 to 17 as shown in FIGS. 1 and 2. The unit processing blocks 14 to 17 are arranged side by side in the order of the unit processing block 17, the unit processing block 14, the unit processing block 15, and the unit processing block 16 from the bottom side. The unit processing blocks 14 to 17 include a liquid processing unit U1 (substrate processing apparatus) and a heat treatment unit U2 as shown in FIG. 3.

The liquid processing unit U1 is configured to supply various processing liquids or gases to the surface Wa of the wafer W. The heat treatment unit U2 is configured to, for example, heat the wafer W by a heating plate, and cool the heated wafer W by a cooling plate, for example, to perform a heat treatment.

The unit processing block 14 is a lower-layer film formation block (BCT block), and is configured to form a lower-layer film on the surface Wa of the wafer W. The unit processing block 14 includes a transfer arm A2 (refer to FIG. 2) for transferring the wafer W to each unit U1 and U2. The liquid processing unit U1 of the unit processing block 14 applies a coating liquid for forming a lower layer film to the surface Wa of the wafer W to form a coating film. The heat treatment unit U2 of the unit processing block 14 performs various heat treatments associated with the formation of an underlying film. Specific examples of the heat treatment include heat treatment for curing the coating film to form an underlayer film. Examples of the underlayer film include an anti-reflection (SiARC) film.

The unit processing block 15 is an intermediate film (hard cover) forming block (HMCT block), and is configured to form an intermediate film on the lower film. The unit processing block 15 includes a carrying arm A3 (refer to FIG. 2) for carrying the wafer W to each unit U1 and U2. The liquid processing unit U1 of the unit processing block 15 applies a coating liquid for forming an intermediate film on a lower layer film to form a coating film. The heat treatment unit U2 of the unit processing block 15 performs various heat treatments accompanying the formation of the intermediate film. Specific examples of the heat treatment include heat treatment for curing the coating film to become an intermediate film. Examples of the intermediate film include a SOC (Spin On Carbon) film and an amorphous carbon film.

The unit processing block 16 is a photoresist film forming block (COT block), and is configured to form a thermosetting photoresist film R on the intermediate film. The unit processing block 16 includes a carrying arm A4 (refer to FIG. 2) for carrying the wafer W to each unit U1 and U2. The liquid processing unit U1 of the unit processing block 16 applies a coating liquid (photoresist) for forming a photoresist film on the intermediate film to form a coating film. The heat treatment unit U2 of the unit processing block 16 performs various heat treatments with the formation of the photoresist film R (hardened film). Specific examples of the heat treatment include a heat treatment (PAB: Pre Applied Bake) for curing the coating film to become the photoresist film R.

The unit processing block 17 is a development processing block (DEV block), and is configured to perform development processing of the exposed photoresist film. The unit processing block 17 has a built-in transfer arm A5 for transferring the wafer W to each unit U1, U2, and a direct transfer arm A6 for transferring the wafer W without such units (refer to FIG. 2). The liquid processing unit U1 of the unit processing block 17 supplies a developing solution to the exposed photoresist film R to develop the photoresist film R. The liquid processing unit U1 of the unit processing block 17 supplies a developing solution to the developed photoresist film R, and the dissolved components of the photoresist film are washed away together with the developing solution. Thereby, the photoresist film R is partially or entirely removed. The heat treatment unit U2 of the unit processing block 16 performs various heat treatments accompanied by a development process. Specific examples of the heat treatment include a heat treatment (PEB: Post Exposure Bake, post-exposure baking) before the development treatment, a heat treatment (PB: Post Bake, post-baking), and the like after the development treatment.

On the side of the carrier block 4 in the processing block 5, as shown in Figs. 2 and 3, a scaffold unit U10 is provided. The shelving unit U10 is provided from the bottom surface to the unit processing block 15 and is divided into a plurality of small units arranged side by side in the vertical direction. A lifting arm A7 is provided near the scaffolding unit U10. The lifting arm A7 lifts and lowers the wafer W between the small units of the shelf unit U10.

On the side of the interface block 6 in the processing block 5, a scaffold unit U11 is provided. The shelving unit U11 is provided from the bottom surface to the upper part of the unit processing block 17, and is divided into a plurality of small units arranged side by side in the vertical direction.

The interface block 6 is provided with a transfer arm A8 and is connected to the exposure device 3. The transfer arm A8 is configured to take out the wafer W of the rack unit U11 and carry it to the exposure apparatus 3, and receive the wafer W from the exposure apparatus 3 and return to the rack unit U11.

The controller 10 controls the substrate processing system 1 partially or entirely. Details of the controller 10 will be described later. In addition, the controller 10 may receive and transmit signals between the controller of the exposure device 3 and control the substrate processing system 1 and the exposure device 3 through the cooperation of the controllers.

[Configuration of liquid processing unit]
Next, the liquid processing unit U1 will be described in more detail with reference to FIGS. 4 to 7. The liquid processing unit U1 includes a rotation holding section 20, a coating liquid supply section 30 (supply section), and a drive mechanism 40 (supply section).

The rotation holding portion 20 includes a rotation portion 21, a shaft 22, and a holding portion 23. The rotating unit 21 operates according to an operation signal from the controller 10 to rotate the shaft 22. The rotating portion 21 is a power source such as an electric motor. The holding portion 23 is provided at a front end portion of the shaft 22. A wafer W is arranged on the holding portion 23. The holding portion 23 holds the wafer W slightly horizontally, for example, by suction or the like. That is, the rotation holding portion 20 rotates the wafer W around a central axis Ax (rotation axis) perpendicular to the surface Wa of the wafer W in a state where the posture of the wafer W is slightly horizontal. In this embodiment, as shown in FIG. 4, when viewed from above, the holding portion 20 is rotated to rotate the wafer W clockwise at a predetermined rotation speed.

The coating liquid supply unit 30 is configured to supply the coating liquid L to an edge portion Wb of the surface Wa of the wafer W. Examples of the coating liquid L include a photosensitive photoresist material that becomes a photosensitive photoresist film, and a non-photosensitive photoresist material that becomes a non-photosensitive photoresist film.

The coating liquid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle N, a pipe 34, and a driving mechanism 40. The liquid source 31 functions as a supply source of the coating liquid L. The pump 32 operates according to an operation signal from the controller 10, sucks the coating liquid L from the liquid source 31, and sends the coating liquid L to the nozzle N through the pipe 34 and the valve 33. The valve 33 is operated in accordance with an operation signal from the controller 10, and the piping 34 is opened and closed before and after the valve 33.

The nozzle N is disposed above the wafer W so that the discharge port faces the edge portion Wb of the wafer W. The nozzle N can spray the coating liquid L sent from the pump 32 toward the edge portion Wb. The piping 34 connects the liquid source 31, the pump 32, the valve 33, and the nozzle N in this order from the upstream side.

The driving mechanism 40 is configured to operate in accordance with an operation signal from the controller 10 to move the nozzle N in the horizontal direction and the vertical direction, and change the attitude of the nozzle N. Specifically, as shown in FIGS. 5 and 6, the driving mechanism 40 includes a guide rail 41, a moving body 42, an arm portion 43, and a slider 44.

As shown in FIG. 5, the guide rail 41 extends linearly and slightly horizontally along the radial direction of the wafer W when viewed from above. The moving body 42 is attached to the guide rail 41. The moving body 42 includes an actuator (for example, a servo motor with an encoder), and the motor is operated according to an operation signal from the controller 10 so as to be slidable on the guide rail 41.

The arm portion 43 is attached to the moving body 42. The arm portion 43 extends linearly and slightly horizontally from the moving body 42 toward the wafer W when viewed from above. The actuator included in the moving body 42 operates according to an operation signal from the controller 10, and is also configured to raise and lower the arm portion 43 in the vertical direction.

A nozzle N is attached to the front end portion of the arm portion 43. The nozzle N moves in the radial direction of the wafer W above the wafer W on a straight line orthogonal to the central axis Ax of the wafer W as the moving body 42 moves along the guide rail 41.

As shown in FIG. 6, the arm portion 43 is provided with a rail groove 43 a extending along the longitudinal direction thereof. A slider 44 is installed in the track groove 43a. The slider 44 includes an actuator (for example, a servo motor with an encoder), and the motor is operated according to an operation signal from the controller 10, and is configured to be slidable in the track groove 43a.

The slider 44 and the base end portion of the nozzle N are connected by a connecting member 45. More specifically, one end of the connecting member 45 is rotatably attached to the slider 44, and the other end of the connecting member 45 is rotatably attached to the base end of the nozzle N. On the other hand, the front end portion of the nozzle N is rotatably attached to the support member 43 b extending laterally from the arm portion 43. Therefore, if the slider 44 slides in the rail groove 43a, the nozzle N will swing about the front end of the nozzle N as a center. The angle θ (see FIG. 7) of the nozzle N with respect to the surface Wa of the wafer W can be set, for example, between about 15 ° and 45 °.

By sliding the slider 44 in the track groove 43a, the attitude of the nozzle N is viewed from above, and the discharge opening of the nozzle N is rotated along the rotation direction (circumferential direction) of the wafer W toward the wafer W. The state of the direction (first attitude) and the state (second attitude) of the discharge opening of the nozzle N along the radial direction of the wafer W and toward the outer edge Wc of the wafer W when viewed from above. When viewed from above, the first and second attitudes can be changed within a range of approximately 90 °. More specifically, the angle φ between the radial direction of the wafer W and the ejection port of the nozzle N (refer to FIG. 6) may be in a range of 0 ° to 90 °, or may be in a range of 15 ° to 75 ° Within, or can be located in the range of 30 ° ~ 60 °. In addition, the direction of the discharge port of the nozzle is slightly the same as the discharge direction of the coating liquid L discharged from the nozzle N.

[Construction of controller]
As shown in FIG. 8, the controller 10 includes, as a function module, a reading section M1, a storage section M2, a processing section M3, and an instruction section M4. These functional modules are merely for the convenience of distinguishing the functions of the controller 10 into a plurality of modules, and do not mean that the hardware constituting the controller 10 must be divided into such modules. Each functional module is not limited to be implemented by the execution of a program, and can also be a dedicated electrical circuit (such as a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit). achieve.

The reading unit M1 can read a recording medium RM reading program from a computer. The recording medium RM stores a program for operating each part of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical disk, a magnetic disk, or a magneto-optical disk.

The storage unit M2 stores various data. The storage unit M2 stores, for example, a program read from the recording medium RM in the reading unit M1, various data (so-called processing recipes) when processing the wafer W, and input by an operator via an external input device (not shown). Setting data, etc.

The processing unit M3 processes various data. The processing unit M3, for example, generates operations for operating the liquid processing unit U1 (for example, the rotation holding unit 20, the pump 32, the valve 33, the driving mechanism 40, etc.) and the heat treatment unit U2 based on various data stored in the storage unit M2. Signal.

The instruction unit M4 sends the operation signals generated in the processing unit M3 to various devices.

The hardware of the controller 10 is configured by, for example, one or a plurality of control computers. The controller 10 includes a circuit 10A shown in FIG. 9 as a hardware configuration. The circuit 10A may be constituted by an electric circuit element. The circuit 10A specifically includes a processor 10B, a memory 10C (storage section), a memory 10D (storage section), a driver 10E, and an input / output port 10F. The processor 10B executes a program in cooperation with at least one of the memory 10C and the memory 10D, and executes the input and output of signals through the input / output port 10F, thereby constituting the above-mentioned functional modules. The memory 10C and the memory 10D function as the storage unit M2. The driver 10E is a circuit that individually drives various devices of the substrate processing system 1. The input / output port 10F performs input / output of signals between the driver 10E and various devices of the substrate processing system 1 (for example, the rotation holding unit 20, the pump 32, the valve 33, and the driving mechanism 40).

In this embodiment, although the substrate processing system 1 includes one controller 10, it may include a controller group (control unit) including a plurality of controllers 10. In the case where the substrate processing system 1 includes a controller group, the above-mentioned functional modules may be implemented by one controller 10 respectively, or may be implemented by a combination of two or more controllers 10. In the case where the controller 10 is constituted by a plurality of computers (circuit 10A), the above functional modules may be implemented by one computer (circuit 10A), respectively, or may be implemented by a combination of two or more computers (circuit 10A). The controller 10 may include a plurality of processors 10B. In this case, the above functional modules may be implemented by one processor 10B, respectively, or may be implemented by a combination of two or more processors 10B.

[Wafer Processing Method]
Next, a method (wafer processing method; substrate processing method) for supplying a coating liquid L to the wafer W and forming a photoresist film R on the edge portion Wb of the wafer W will be described with reference to FIG. 10. First, the controller 10 controls each part of the substrate processing system 1, and transfers the wafer W from the carrier 11 to the liquid processing unit U1.

Next, the controller 10 controls the rotation holding portion 20 to hold the wafer W in the holding portion 23 and rotates the wafer W at a predetermined rotation speed. In this state, the controller 10 controls the pump 32, the valve 33, and the driving mechanism 40 to move the nozzle N above the edge portion Wb, and ejects the coating liquid L from the nozzle N to the edge portion Wb of the wafer W.

When the nozzle N is swept in from the outer edge Wc side to the center axis Ax side, the attitude of the nozzle N first assumes that the discharge opening of the nozzle N is along the rotation direction of the wafer W (circumferential direction) when viewed from above. ) And is in a state (first attitude) toward the forward rotation direction of the wafer W (see FIG. 10 (a)). Therefore, the discharge direction of the coating liquid L from the nozzle N is also the forward rotation direction of the wafer W along the rotation direction (circumferential direction) of the wafer W when viewed from above. Ruoshi coating solution at this time from the ejection nozzle N of the velocity vector of L <L1>, the vector <L1> rotational direction component _<L1 θ>, than vector <L1> radial component <L1 _r>. In this specification, the symbols "<" and ">" refer to the quantities whose values are enclosed by these vectors.

If the nozzle N continues the scanning operation and moves closer to the central axis Ax, the attitude of the nozzle N is such that the discharge opening of the nozzle N is along the radial direction of the wafer W and faces the outer edge Wc of the wafer W when viewed from above. State (second attitude) (refer to Fig. 10 (b)). Therefore, the ejection direction of the coating liquid L from the nozzle N is also the ejection port of the nozzle N when viewed from above along the radial direction of the wafer W and toward the outer edge Wc. Ruoshi coating solution at this time from the ejection nozzle N of the velocity vector of L <L2>, the vector <L2> radial component <L2 _r>, than vector <L2> the rotational direction component _<L2 θ>.

On the other hand, in a case where the sweeping operation of the nozzle N from the center axis Ax side to the outer edge Wc side is performed, the nozzle N is changed from the second posture to the first posture. In the case where the nozzle N is in the scanning operation and the scanning operation, the state in which the coating liquid L is ejected from the nozzle N is maintained in accordance with the movement of the nozzle N (moving body 42), so that the attitude of the nozzle N is in the first attitude and The second attitude is continuously and slowly changed, and may be changed stepwise (intermittently). In this manner, an edge coating film is formed on the edge portion Wb.

Next, the controller 10 controls each part of the substrate processing system 1 and transfers the wafer W from the liquid processing unit U1 to the heat treatment unit U2. Next, the controller 10 controls the heat treatment unit U2 to heat the wafer W together with the coating film. Thereby, a cured film, that is, a photoresist film R, which is cured by the coating film, is formed. In the above manner, the processing of the wafer W is finished, and a photoresist film R is formed on the edge portion Wb of the wafer W.

[effect]
It is assumed that if the nozzle N is maintained in the first posture (refer to FIG. 10 (a)) without changing, and the coating liquid L is ejected from the nozzle N to the edge portion Wb, the rotational direction component <L1 _θ > exceeds the radial component <L1 _r > Therefore, the coating liquid L easily diffuses in the circumferential direction of the wafer W. Therefore, there is a tendency that unevenness of the edge coating film does not easily occur in the circumferential direction of the wafer W (see FIG. 11 (a)). On the other hand, when the coating liquid L diffuses in the circumferential direction of the wafer W, compared with the central axis Ax side of the wafer W, a larger centrifugal force acts on the coating liquid L on the edge portion Wb side. The flow velocity of the wafer W on the central axis Ax side becomes slower, and the flow velocity of the outer edge Wc of the wafer W in the coating liquid L becomes faster. Therefore, the coating liquid L tends to stay on the center axis Ax side of the wafer W, and the shape of the inner edge of the edge coating film is easily disordered. As a result, the uniformity of the coating width of the edge coating film is reduced (refer to FIG. 11 (a)), and the peak portion H (refer to FIG. 7) tends to be easily generated on the inner edge of the edge coating film.

On the other hand, if the nozzle N is maintained in the second posture (refer to FIG. 10 (b)) without changing, and the coating liquid L is ejected from the nozzle N to the edge portion Wb, the radial component <L2 _r > exceeds the rotational direction component Since <L2 _θ >, the coating liquid L flows quickly toward the outer edge Wc of the wafer W. Therefore, at the liquid arriving position of the coating liquid L on the surface Wa of the wafer W, the coating liquid is not easily disturbed. Therefore, the inner edge of the edge-coated film is likely to become uniform (refer to FIG. 11 (b)). As a result, the uniformity of the coating width of the edge coating film is increased, and the peak portion H (refer to FIG. 7) tends to be less likely to occur in the inner edge of the edge coating film. On the other hand, the coating liquid L does not easily diffuse in the circumferential direction of the wafer W. Therefore, the edge coating film tends to become uneven in the circumferential direction of the wafer W (see FIG. 11 (b)).

However, in the above embodiment, when the coating liquid L ejected from the nozzle N is supplied to the edge portion Wb near the outer edge Wc (when the nozzle N is located near the outer edge Wc), the nozzle N is set to the first posture. When the coating liquid L ejected from the nozzle N is supplied to the edge portion Wb near the central axis Ax (when the nozzle N is located near the central axis Ax), the nozzle N is set to the second posture. Therefore, the following effects can be obtained: the uniformity of the coating width of the edge coating film is increased, and the effect that the peak portion is hardly generated in the inner edge of the edge coating film is obtained; The effect of unevenness of the edge coating film occurs.

In the above embodiment, the controller 10 changes the attitude of the nozzle N by controlling the slider 44. Therefore, the ejection direction of the coating liquid L can be changed using only one nozzle N.

In the said embodiment, the nozzle N is comprised so that the front-end | tip part may swing. Therefore, the attitude of the nozzle N is changed while the angle θ (see FIG. 7) of the nozzle N with respect to the surface Wa of the wafer W is maintained approximately constant. Therefore, even if the attitude of the nozzle N is changed, the amount of change in the liquid arrival position of the coating liquid L toward the surface Wa of the wafer W is still suppressed. As a result, the edge coating film can be more uniformly formed on the edge portion Wb.

In the above embodiment, the nozzle N performs a scanning operation or a scanning operation, and continuously sprays the coating liquid L from the nozzle N. Therefore, the coating liquid L is continuously supplied to the edge portion Wb without interrupting the discharge of the coating liquid L from the nozzle N. Therefore, the coating liquid L ejected from the nozzle N does not easily overlap on the surface Wa of the wafer W. Therefore, the film thickness of the edge coating film becomes slightly uniform.

[Modification]
Although the embodiments disclosed in the present invention have been described in detail above, various modifications may be added to the above embodiments within the scope of the gist of the present invention.

(1) For example, as shown in FIG. 12, the coating liquid supply unit 30 may include a plurality of nozzles N, and the nozzle N (the nozzle N on the right side in FIG. 12) may be positioned above the wafer W on the outer edge Wc side of the edge portion Wb ) Is the first attitude, and the nozzle N (the nozzle N on the left side in FIG. 12) located above the wafer W on the central axis Ax side of the edge portion Wb is set to the second attitude.

(2) As shown in FIG. 13, the liquid processing unit U1 may further include a camera 60 (detection unit). In this case, for a plurality of sample wafers, the surface of the sample wafer is captured by the camera 60 in advance, and the controller 10 calculates the in-plane shape (for example, the height position) of the edge portion Wb based on the image data of the camera 60. The operation setting of the nozzle N (a combination of the position of the nozzle N of the edge portion Wb and the attitude of the nozzle N at this time) suitable for the shape in the plane is stored in the storage portion M2 of the controller 10 in advance. Then, when the wafer W is actually processed, first, the surface Wa of the wafer W is captured by the camera 60, and the controller 10 calculates the in-plane shape of the edge portion Wb based on the image data of the camera 60. The controller 10 obtains, from the storage unit M2, the operation setting of the nozzle N that is consistent or corresponding to the calculated in-plane shape, and controls the driving mechanism 40 based on the operation setting to change the position and attitude of the nozzle N. Accordingly, even if the edge portion Wb of the wafer W is warped and uneven, the coating liquid L is appropriately supplied from the nozzle N to the edge portion Wb. Therefore, the edge coating film can be more uniformly formed on the edge portion Wb. Alternatively, while the in-plane shape of the edge portion Wb of the wafer W to be processed is captured by the camera 60, the controller 10 may directly calculate the in-plane shape of the edge portion Wb, and the position and attitude of the nozzle N may be changed to Suitable for the shape of the surface. If the in-plane shape of the edge portion Wb of the wafer W can be detected, other various detection units such as a distance sensor may be used instead of the camera 60.

(3) As shown in FIG. 14, the driving mechanism 40 further includes a slider 46. The slider 46 is mounted in the rail groove 43 a in the same manner as the slider 44. The slider 46 includes an actuator (for example, a servo motor with an encoder), and the motor is operated according to an operation signal from the controller 10, and is configured to be slidable in the track groove 43a.

The base end of the support member 43b is fixed to the slider 46. On the other hand, the front end of the nozzle N is rotatably attached to the front end of the support member 43b. Therefore, if the support member 43b moves with the slider 46, the front end of the nozzle N also moves along the rail groove 43a.

The controller 10 controls the actuators of the sliders 44 and 46 to adjust the spraying direction of the coating liquid L from the nozzle N and the position where the coating liquid L sprayed from the nozzle N contacts the surface Wa of the wafer W. That is, by controlling the sliders 44 and 46 independently by the controller 10, even if the orientation of the nozzle N (the discharge direction of the coating liquid L) is changed, the liquid arrival position of the coating liquid L can be made more constant.

(4) A processing liquid other than the coating liquid L may also be applied to the present technology. For example, the processing liquid may be an organic solvent for removing a photoresist film formed on an edge region of the wafer W.

1‧‧‧ substrate processing system (substrate processing device)

2‧‧‧ Coating and developing device (substrate processing device)

3‧‧‧ exposure device

4‧‧‧ Vehicle Block

5‧‧‧ Processing Block

6‧‧‧Interface Block

10‧‧‧ Controller (Control Department)

10A‧‧‧Circuit

10B‧‧‧Processor

10C‧‧‧Memory

10D‧‧‧Memory

10E‧‧‧Driver

10F‧‧‧I / O port

11‧‧‧ Vehicle

11a‧‧‧ side

12‧‧‧ Delivery Station

13‧‧‧ Move in and out

13a‧‧‧Open and close 扉

14 ～ 17‧‧‧Unit processing block

20‧‧‧Rotary holding section

21‧‧‧Rotating part

22‧‧‧axis

23‧‧‧holding department

30‧‧‧ Coating liquid supply section (supply section)

31‧‧‧Liquid source

32‧‧‧ pump

33‧‧‧ Valve

34‧‧‧Piping

40‧‧‧Drive mechanism (supply department)

41‧‧‧rail

42‧‧‧ Mobile

43‧‧‧arm

43a‧‧‧track groove

43b‧‧‧ supporting components

44, 46‧‧‧ slider

45‧‧‧ connecting member

60‧‧‧ Camera (Detection Section)

A1, A8‧‧‧Transfer arms

A2, A3, A4, A5‧‧‧ handling arms

A6‧‧‧Direct handling arm

A7‧‧‧Lifting arm

Ax‧‧‧center axis (rotation axis)

H‧‧‧Peak

L‧‧‧ coating liquid

M1‧‧‧Reading Department

M2‧‧‧Storage Department

M3‧‧‧ Processing Department

M4‧‧‧ Instruction

N‧‧‧Nozzle

R‧‧‧Photoresistive film

RM‧‧‧Recording media

U1‧‧‧Liquid processing unit (substrate processing device)

U2‧‧‧Heat treatment unit

U10, U11‧‧‧Scaffolding units

W‧‧‧ Wafer (substrate)

Wa‧‧‧ surface

Wb‧‧‧Edge

Wc‧‧‧Outer edge

FIG. 1 is a perspective view showing a substrate processing system.

FIG. 2 is a sectional view taken along the line II-II in FIG. 1.

FIG. 3 is a top view showing a unit processing block (BCT block, HMCT block, COT block, and DEV block).

Fig. 4 is a schematic view of the liquid processing unit as viewed from the side.

Fig. 5 is a schematic view of the liquid processing unit as viewed from above.

Fig. 6 is a diagram showing a driving mechanism of the nozzle.

FIG. 7 is a side view mainly showing the appearance of a nozzle and an edge coating film.

FIG. 8 is a block diagram showing a main part of a substrate processing system.

FIG. 9 is a schematic diagram showing the hardware configuration of the controller.

FIG. 10 (a) is a diagram for explaining a coating process when the nozzle is oriented in the radial direction; FIG. 10 (b) is a diagram for explaining a coating process when the nozzle is oriented in the circumferential direction.

Fig. 11 (a) is an enlarged photograph showing an example of an edge-coated film when the nozzle is oriented in the radial direction; Fig. 11 (b) is an example of an edge-coated film when the nozzle is oriented in the circumferential direction; Zoom in on the photo.

FIG. 12 is a schematic view of another example of a liquid processing unit as viewed from above.

FIG. 13 is a schematic view of another example of a liquid processing unit as viewed from the side.

FIG. 14 is a diagram showing a nozzle driving mechanism of another example.

Claims (11)

A substrate processing device includes: Rotate the holding part to hold the substrate and rotate it; A supply unit for supplying a processing liquid from a nozzle located on a surface side of the substrate to an edge portion of the surface; and Control department The control unit performs the following steps: Controlling the rotation holding part to rotate the substrate; When the processing liquid ejected from the nozzle is supplied to the edge portion near the center of the substrate, the supply portion is controlled so that when viewed from above, the ejection direction of the processing liquid from the nozzle is along the diameter of the substrate. Spraying the processing liquid from the nozzle outward; and When the processing liquid ejected from the nozzle is supplied to the edge portion near the edge of the substrate, the supply portion is controlled so that the direction of ejection of the processing liquid from the nozzle toward the forward rotation direction of the substrate when viewed from above. Method, the processing liquid is ejected from this nozzle. For example, the substrate processing apparatus of the scope of application for patent No. 1 wherein: The supply unit is further configured to change the attitude of the nozzle; The control unit performs the following steps: When the processing liquid discharged from the nozzle is supplied to the edge portion near the center of the substrate, the supply portion is controlled, and the attitude of the nozzle is adjusted so that the processing liquid discharge direction from the nozzle is along the direction when viewed from above The substrate is directed radially outward, and the processing liquid is ejected from the nozzle; and In the case where the processing liquid discharged from the nozzle is supplied to the edge portion near the edge of the substrate, the supply portion is controlled, and the attitude of the nozzle is adjusted so that the processing liquid discharge direction from the nozzle faces toward the The substrate is rotated in the forward direction, and the processing liquid is ejected from the nozzle. For example, the substrate processing apparatus of the scope of application for patent No. 2 wherein, The control unit controls the supply unit, and adjusts the attitude of the nozzle so that the angle of the processing liquid ejected from the nozzle to the surface of the substrate becomes constant. For example, for a substrate processing device for which the scope of patent application is 2 or 3, It is further provided with a detection section for detecting the in-plane shape of the edge portion; The control unit controls the supply unit, and adjusts the attitude of the nozzle based on the in-plane shape detected by the detection unit. For example, a substrate processing apparatus according to any one of claims 1 to 3, wherein, The control unit controls the supply unit to cause the nozzle to perform a sweeping operation in which the nozzle is moved from the edge side of the edge portion toward the center side, or to cause the nozzle to perform a nozzle movement from the center side of the edge portion to the edge side. During the sweep operation, the processing liquid is continuously ejected from the nozzle. A substrate processing method includes the following steps: Rotating the substrate; and When the processing liquid discharged from a nozzle located above the substrate is supplied to the edge of the surface of the substrate near the center of the substrate so that the direction of the processing liquid discharged from the nozzle is viewed along the substrate from above When the processing liquid sprayed from the nozzle is supplied to the edge portion near the edge of the substrate so that the processing liquid from the nozzle is viewed from above The processing liquid is discharged from the nozzle so that the liquid discharge direction is directed to the forward rotation direction of the substrate. For example, the substrate processing method in the scope of application for patent No. 6 wherein: The discharge of the processing liquid from the nozzle includes a case where the processing liquid discharged from the nozzle is supplied to the edge portion near the center of the substrate, and the attitude of the nozzle is adjusted so that the processing from the nozzle is viewed from above. When the liquid ejecting direction is outward along the radial direction of the substrate, the processing liquid is ejected from the nozzle; and when the processing liquid ejected from the nozzle is supplied to the edge portion near the edge of the substrate, The attitude of the nozzle is adjusted so that the processing liquid is ejected from the nozzle in a state where the ejection direction of the processing liquid from the nozzle is directed to the forward rotation direction of the substrate when viewed from above. For example, the substrate processing method in the scope of patent application item 7, wherein, Discharging the processing liquid from the nozzle includes adjusting the attitude of the nozzle so that the angle of the processing liquid discharged from the nozzle on the surface of the substrate becomes constant, and discharging the processing liquid from the nozzle. For example, the substrate processing method of the scope of patent application No. 7 or 8, in which, Further includes detecting an in-plane shape of the edge portion; Spraying the processing liquid from the nozzle includes adjusting the attitude of the nozzle according to the detected in-plane shape, and spraying the processing liquid from the nozzle. For example, the method for processing a substrate according to any one of claims 6 to 8, wherein: Discharging the treatment liquid from the nozzle includes: sweeping the nozzle to perform the sweeping operation of the nozzle from the edge side of the edge portion toward the center side, or moving the nozzle to perform the nozzle from the center side of the edge portion toward the edge side. During the sweep operation, the processing liquid is continuously ejected from the nozzle. A computer-readable recording medium recorded with a program for causing a substrate processing apparatus to execute a substrate processing method according to any one of claims 6 to 10 of the scope of patent application.