TW201937790A - 用於高溫及高壓可充電電池之奈米複合電極材料 - Google Patents
用於高溫及高壓可充電電池之奈米複合電極材料 Download PDFInfo
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- TW201937790A TW201937790A TW107131222A TW107131222A TW201937790A TW 201937790 A TW201937790 A TW 201937790A TW 107131222 A TW107131222 A TW 107131222A TW 107131222 A TW107131222 A TW 107131222A TW 201937790 A TW201937790 A TW 201937790A
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- 239000002114 nanocomposite Substances 0.000 title claims abstract description 168
- 239000007772 electrode material Substances 0.000 title abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 173
- 239000002105 nanoparticle Substances 0.000 claims abstract description 48
- 229910000314 transition metal oxide Inorganic materials 0.000 claims abstract description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 79
- 239000000203 mixture Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 66
- 229910021389 graphene Inorganic materials 0.000 claims description 64
- 229910052582 BN Inorganic materials 0.000 claims description 44
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 44
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 43
- 229910001416 lithium ion Inorganic materials 0.000 claims description 43
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 27
- 229910052717 sulfur Inorganic materials 0.000 claims description 25
- 239000011593 sulfur Substances 0.000 claims description 25
- 239000002904 solvent Substances 0.000 claims description 20
- JDZCKJOXGCMJGS-UHFFFAOYSA-N [Li].[S] Chemical compound [Li].[S] JDZCKJOXGCMJGS-UHFFFAOYSA-N 0.000 claims description 19
- 229910021524 transition metal nanoparticle Inorganic materials 0.000 claims description 19
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- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 7
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 7
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- 239000002184 metal Substances 0.000 claims description 7
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- 238000001035 drying Methods 0.000 claims description 5
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- 238000010586 diagram Methods 0.000 description 15
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
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- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
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- 239000004215 Carbon black (E152) Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 2
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 description 2
- 229910001981 cobalt nitrate Inorganic materials 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
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- 229910021450 lithium metal oxide Inorganic materials 0.000 description 2
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
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- 238000005192 partition Methods 0.000 description 2
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- 239000002243 precursor Substances 0.000 description 2
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- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 150000003463 sulfur Chemical class 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- VDFVNEFVBPFDSB-UHFFFAOYSA-N 1,3-dioxane Chemical compound C1COCOC1 VDFVNEFVBPFDSB-UHFFFAOYSA-N 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- 208000032953 Device battery issue Diseases 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
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- 150000001336 alkenes Chemical class 0.000 description 1
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- 125000004432 carbon atom Chemical group C* 0.000 description 1
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- ZBYYWKJVSFHYJL-UHFFFAOYSA-L cobalt(2+);diacetate;tetrahydrate Chemical compound O.O.O.O.[Co+2].CC([O-])=O.CC([O-])=O ZBYYWKJVSFHYJL-UHFFFAOYSA-L 0.000 description 1
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 description 1
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- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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Classifications
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- H01M4/52—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
- H01M4/525—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
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- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
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- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/028—Positive electrodes
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| US15/866,113 US10424782B2 (en) | 2018-01-09 | 2018-01-09 | Nanocomposite electrode materials for use in high temperature and high pressure rechargeable batteries |
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| CN113380629A (zh) * | 2020-05-28 | 2021-09-10 | 台湾积体电路制造股份有限公司 | 形成半导体器件的方法 |
| US11688605B2 (en) | 2020-05-28 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with two-dimensional materials |
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| US11239466B2 (en) | 2018-01-09 | 2022-02-01 | Saudi Arabian Oil Company | Nanocomposite cathode materials for use in batteries |
| US10424782B2 (en) | 2018-01-09 | 2019-09-24 | Saudi Arabian Oil Company | Nanocomposite electrode materials for use in high temperature and high pressure rechargeable batteries |
| US11830735B2 (en) * | 2018-10-03 | 2023-11-28 | Northwestern University | Two-dimensional semiconductor based printable optoelectronic inks, fabricating methods and applications of same |
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| CN113054129A (zh) * | 2019-12-28 | 2021-06-29 | Tcl集团股份有限公司 | 复合材料及其制备方法、导电电极和发光二极管 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113380629A (zh) * | 2020-05-28 | 2021-09-10 | 台湾积体电路制造股份有限公司 | 形成半导体器件的方法 |
| TWI785466B (zh) * | 2020-05-28 | 2022-12-01 | 台灣積體電路製造股份有限公司 | 形成半導體裝置的方法 |
| US11688605B2 (en) | 2020-05-28 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with two-dimensional materials |
| US12400860B2 (en) | 2020-05-28 | 2025-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with two-dimensional materials |
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| US11658286B2 (en) | 2023-05-23 |
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| US10424782B2 (en) | 2019-09-24 |
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