TW201935563A - Substrate processing device - Google Patents
Substrate processing device Download PDFInfo
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- TW201935563A TW201935563A TW108104011A TW108104011A TW201935563A TW 201935563 A TW201935563 A TW 201935563A TW 108104011 A TW108104011 A TW 108104011A TW 108104011 A TW108104011 A TW 108104011A TW 201935563 A TW201935563 A TW 201935563A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
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Abstract
Description
本發明係有關於具有調節基板周圍之氛圍之功能的基板處理裝置。The present invention relates to a substrate processing apparatus having a function of adjusting the atmosphere around a substrate.
為了製造半導體裝置，會對半導體晶圓等基板施行各種處理。在進行某項處理時，基板會在容納於FOUP（晶圓傳送盒）等基板搬運容器內的狀態，而搬入基板處理裝置。接著，會以基板搬運裝置將基板從基板搬運容器取出，再搬入處理腔室內，並在該處施行處理；之後，再以基板搬運裝置從處理腔室取出，並搬入原本的基板搬運容器。In order to manufacture semiconductor devices, various processes are performed on substrates such as semiconductor wafers. During a certain process, the substrate is carried into a substrate processing apparatus while being stored in a substrate transfer container such as a FOUP (wafer transfer box). Next, the substrate is taken out of the substrate carrying container by the substrate carrying device, and then carried into the processing chamber, and processing is performed there; after that, the substrate carrying device is taken out of the processing chamber and carried into the original substrate carrying container.
有時會由於含有較多氧氣的無塵室內的大氣氛圍，而使基板表面發生導致問題之程度的氧化。為了防止此種情形，從基板搬運容器搬出後、到再度回到基板搬運容器為止，要使基板所通過之區域的至少一部分，成為低氧濃度氣體氛圍（例如參照專利文獻1）。In some cases, due to the atmospheric atmosphere in a clean room containing a large amount of oxygen, the substrate surface is oxidized to a degree that causes problems. In order to prevent this, at least a part of the area through which the substrate passes after the substrate transfer container is unloaded and returned to the substrate transfer container is set to a low oxygen concentration gas atmosphere (for example, refer to Patent Document 1).
有時會要求基板從搬運容器搬出後、到再度回到基板搬運容器為止，基板所通過之全區域都是低氧濃度氣體氛圍。在此情況下，有必要使大量的低氧濃度氣體在基板處理裝置的內部流通，而導致消耗龐大的工廠生產資源。
［習知技術文獻］
［專利文獻］In some cases, after the substrate is removed from the transfer container and returned to the substrate transfer container again, the entire area through which the substrate passes is in a low oxygen concentration gas atmosphere. In this case, it is necessary to circulate a large amount of low-oxygen-concentration gas inside the substrate processing apparatus, thereby consuming huge factory production resources.
[Learning technical literature]
[Patent Literature]
［專利文獻1］日本特開2001－102374號公報[Patent Document 1] Japanese Patent Laid-Open No. 2001-102374
［發明所欲解決的問題］[Problems to be Solved by Invention]
本發明之目的，係確實地進行基板處理裝置內之空間的氛圍調整，同時削減氛圍調整用氣體之使用量。
［解決問題之技術手段］The object of the present invention is to reliably adjust the atmosphere in a space in a substrate processing apparatus and reduce the amount of gas used for atmosphere adjustment.
[Technical means to solve problems]
若藉由本發明一實施形態，提供一種基板處理裝置，具備：容器搬出搬入部，載置有容納了基板的基板搬運容器；處理單元，對該基板施行處理；搬運空間，在該容器搬出搬入部與該處理單元之間搬運基板；基板搬運機構，於該搬運空間內，在該容器搬出搬入部與該處理單元之間，搬運該基板；第1氣體供給路徑，用以對該處理單元供給氛圍調整氣體；第1氣體排出路徑，用以從該處理單元排出該氛圍調整氣體；循環路徑，連接至該搬運空間，並使得由該搬運空間流出之該氛圍調整氣體回到該搬運空間；第2氣體供給路徑，對於由該搬運空間與該循環路徑所構成之循環系統，供給該氛圍調整氣體；以及第2氣體排出路徑，用以從該循環系統排出該氛圍調整氣體。
［發明之效果］According to an embodiment of the present invention, there is provided a substrate processing apparatus including: a container carrying-in / carrying-out unit that carries a substrate carrying container containing a substrate; a processing unit that performs processing on the substrate; and a carrying space in which the container carrying-in and carrying-in unit The substrate is transported between the processing unit and the substrate. The substrate transport mechanism transports the substrate between the container carrying-out and loading unit and the processing unit in the transportation space. The first gas supply path is used to supply atmosphere to the processing unit. Adjusting gas; a first gas exhaust path for exhausting the atmosphere adjusting gas from the processing unit; a circulation path connected to the carrying space and allowing the atmosphere adjusting gas flowing out of the carrying space to return to the carrying space; the second The gas supply path supplies the atmosphere adjustment gas to a circulation system constituted by the transfer space and the circulation path; and a second gas discharge path for exhausting the atmosphere adjustment gas from the circulation system.
[Effect of Invention]
藉由上述本發明實施形態，由於用以調整搬運空間之氛圍的氛圍調整氣體會循環重複利用，所以可以削減氛圍調整氣體之使用量，而可以降低基板處理裝置之運轉費用及對於工廠生產資源所造成的負擔。According to the embodiment of the present invention, since the atmosphere adjustment gas used to adjust the atmosphere of the conveying space is circulated and reused, the amount of the atmosphere adjustment gas can be reduced, and the operating cost of the substrate processing apparatus can be reduced. The burden.
以下將參照隨附圖式，針對作為本發明基板處理裝置一實施形態的基板處理系統，進行說明。圖1係繪示基板處理系統之概略構成的圖式。以下為了使相對位置明確，而定出彼此正交之X軸、Y軸及Z軸，並以Z軸正方向作為鉛直朝上方向。Hereinafter, a substrate processing system as an embodiment of the substrate processing apparatus of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram showing a schematic configuration of a substrate processing system. In order to make the relative position clear, the X-axis, Y-axis, and Z-axis orthogonal to each other are determined, and the positive direction of the Z-axis is used as the vertical upward direction.
如圖1所示，基板處理系統1具有：搬出搬入部2、第1搬運部3、介面部（連接部）4、以及處理部5。第1搬運部3、以及介面部4和處理部5，係容納在包覆整個基板處理系統1的機殼內。As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading section 2, a first conveying section 3, a mesas section (connection section) 4, and a processing section 5. The first conveyance section 3, the mesas section 4, and the processing section 5 are housed in a casing that covers the entire substrate processing system 1.
搬出搬入部2具有容器載置部20，在此容器載置部20上可以載置複數個基板搬運容器C（以下僅稱為「容器C」）。容器C，係例如稱為FOUP（晶圓傳送盒；Front-Opening Unified Pod）方式的載子。於容器C內，係在鉛直方向上等間隔地以水平方位容納著複數片基板W（例如半導體晶圓）。載置於容器載置部20之容器C的外表面，曝露在設置有此基板處理系統1之無塵室內的氛圍。The loading / unloading section 2 includes a container mounting section 20, and a plurality of substrate transfer containers C (hereinafter, referred to simply as “container C”) can be mounted on the container mounting section 20. The container C is, for example, a carrier called a FOUP (Front-Opening Unified Pod) method. In the container C, a plurality of substrates W (for example, a semiconductor wafer) are housed in the vertical direction at regular intervals in a horizontal orientation. The outer surface of the container C placed on the container mounting portion 20 is exposed to the atmosphere in a clean room in which the substrate processing system 1 is installed.
於第1搬運部3的前面板31（參照圖1及圖2），設有複數個出入口。於各個出入口，設有容器C之蓋體（未圖示）的解鎖機構及蓋體吸附機構，可以移除載置於容器載置部20之容器C的蓋體。一旦移除了容器C的蓋體，容器C的內部空間，就會與第1搬運部3的內部空間（後述之第1搬運空間33）連通。此時，由於容器C的開口部之周緣係與第1搬運部3之前面板31緊接，所以無塵室內的氛圍就不會侵入容器C的內部。當容納基板W之容器C搬入此基板處理系統1時，容器C內就會變成氮氣氛圍而密閉。於此段落所記載之內容，在半導體製造裝置之技術領域係屬公知，而未繪示於圖式。A plurality of entrances and exits are provided on the front panel 31 (see FIGS. 1 and 2) of the first conveyance unit 3. At each entrance and exit, an unlocking mechanism and a lid suction mechanism of a lid (not shown) of the container C are provided, and the lid of the container C placed on the container mounting portion 20 can be removed. When the cover of the container C is removed, the internal space of the container C communicates with the internal space of the first conveyance section 3 (the first conveyance space 33 described later). At this time, since the peripheral edge of the opening portion of the container C is in close contact with the front panel 31 of the first conveyance portion 3, the atmosphere in the clean room does not enter the inside of the container C. When the container C containing the substrate W is carried into the substrate processing system 1, the inside of the container C becomes a nitrogen atmosphere and is sealed. The contents described in this paragraph are well known in the technical field of semiconductor manufacturing devices, and are not shown in the drawings.
於第1搬運部3內，設有第1基板搬運裝置32。於介面部4，設有2個傳遞單元4A、4B。各傳遞單元4A、4B，可以在鉛直方向上隔著間隔地以水平方位保持複數片基板W。第1基板搬運裝置32，從載置於容器載置部20且移除了蓋體的容器C取出基板W，並搬入2個傳遞單元4A、4B中的任一個。第1搬運部3的內部空間33，亦稱為第1搬運空間33。又，於本說明書，所謂的「搬運空間」，係意指以基板搬運裝置搬運基板W的空間。A first substrate transfer device 32 is provided in the first transfer portion 3. On the mesial portion 4, two transmission units 4A and 4B are provided. Each of the transfer units 4A and 4B can hold a plurality of substrates W in a horizontal orientation at intervals in the vertical direction. The first substrate transfer device 32 takes out the substrate W from the container C placed on the container mounting portion 20 and the cover is removed, and loads the substrate W into any one of the two transfer units 4A and 4B. The internal space 33 of the first conveyance section 3 is also referred to as a first conveyance space 33. In addition, in this specification, a "conveying space" means the space which conveys the board | substrate W by a board | substrate conveying apparatus.
處理部5，具有上側部分5A及下側部分5B。由於上側部分5A與下側部分5B之構成係彼此幾乎一致，所以在本說明書，於多數情況下，將僅針對上側部分5A進行說明。在上側部分5A之左右方向（Y方向）中央部，形成了在前後方向（X方向）上延伸的第2搬運空間50A。於第2搬運空間50A內，設有第2基板搬運裝置51A。第2搬運空間50A的左右兩側，分別設有複數個處理單元60A。第2基板搬運裝置51A，可以在上側的傳遞單元4A、與位於上側部分5A的複數個處理單元60A之間，搬運基板。The processing unit 5 includes an upper portion 5A and a lower portion 5B. Since the configurations of the upper portion 5A and the lower portion 5B are almost the same as each other, in this specification, in most cases, only the upper portion 5A will be described. A second conveyance space 50A extending in the front-rear direction (X direction) is formed in the center portion of the upper portion 5A in the left-right direction (Y direction). A second substrate transfer device 51A is provided in the second transfer space 50A. The left and right sides of the second conveyance space 50A are provided with a plurality of processing units 60A, respectively. The second substrate transfer device 51A can transfer substrates between the upper transfer unit 4A and a plurality of processing units 60A located at the upper portion 5A.
如圖4所示，處理單元60A具有單元外殼（腔室）61、以及配置於單元外殼61內的處理機構62。於圖示之實施形態，處理機構62具有：以水平方位保持基板W並使其繞鉛直軸線旋轉的旋轉夾盤63（基板保持旋轉機構）、對基板W供給處理流體（化學藥液、沖洗液、雙流體等）的噴嘴64、以及包圍基板W周圍的杯體65。As shown in FIG. 4, the processing unit 60A includes a unit case (chamber) 61 and a processing mechanism 62 disposed in the unit case 61. In the embodiment shown in the figure, the processing mechanism 62 includes a spin chuck 63 (substrate holding rotation mechanism) that holds the substrate W in a horizontal orientation and rotates it about a vertical axis, and supplies a processing fluid (chemical solution, washing liquid) to the substrate W. , Two-fluid, etc.), and a cup body 65 surrounding the periphery of the substrate W.
處理單元60A，具有氮氣供給部66，對單元外殼61之內部空間（處理空間），尤其是對基板W上方的空間供給氛圍調整氣體，於本例係供給氮氣。氮氣供給部66亦可構成為風扇過濾器單元，在此情況下，會在處理空間形成氛圍調整氣體的降流。The processing unit 60A includes a nitrogen supply unit 66, and supplies an atmosphere-adjusting gas to the internal space (processing space) of the unit case 61, particularly to the space above the substrate W. In this example, nitrogen is supplied. The nitrogen supply unit 66 may be configured as a fan filter unit. In this case, a downflow of the atmosphere adjustment gas is formed in the processing space.
杯體65連接著排氣路徑67及排液路徑68，排氣路徑67係用以抽吸杯體65內部之氛圍，排液路徑68係用以從杯體65排出由基板W所飛散的處理流體。排液路徑68，連接著半導體製造工廠的廢液管線。從排氣路徑67會排出內含以下兩者的混合流體：充滿在單元外殼61之內部空間的氣體、以及從噴嘴64供給至基板W的處理流體。The cup 65 is connected to an exhaust path 67 and a drain path 68. The exhaust path 67 is used to suck the atmosphere inside the cup 65, and the drain path 68 is used to discharge the process scattered by the substrate W from the cup 65 fluid. The drain path 68 is connected to a waste liquid line of a semiconductor manufacturing plant. From the exhaust path 67, a mixed fluid containing both of a gas filled in the internal space of the unit case 61 and a processing fluid supplied from the nozzle 64 to the substrate W is discharged.
於處理單元60，設有空氣供給口69（單元通氣路徑），用以對單元外殼61的內部空間，供給作為吹洗氣體的空氣（在此係已過濾之無塵室內的空氣，即清淨空氣）。The processing unit 60 is provided with an air supply port 69 (unit ventilation path) for supplying air as a purge gas to the internal space of the unit casing 61 (the air in the filtered clean room, that is, clean air) ).
於面對單元外殼61之第2搬運空間50A的側面，設有開口70，可供保持著基板W之第2基板搬運裝置51的機械手臂通過。於開口70，設有閘門71。閘門71在第2基板搬運裝置51要對處理單元60A搬出搬入基板W時，就會開啟。閘門71，在處理單元60A內執行基板W之處理時會關閉，並使處理單元60A的內部空間與搬運空間50A隔離。閘門71亦可具有如閘閥般的構成。An opening 70 is provided on the side facing the second conveyance space 50A of the unit case 61, and a robot arm holding the second substrate conveyance device 51 holding the substrate W can pass therethrough. A gate 71 is provided at the opening 70. The shutter 71 is opened when the second substrate conveyance device 51 carries the substrate W into and out of the processing unit 60A. The shutter 71 is closed when the processing of the substrate W is performed in the processing unit 60A, and the internal space of the processing unit 60A is isolated from the carrying space 50A. The gate 71 may have a configuration like a gate valve.
於處理單元60A之閘門71的相反側的側面，設有維修出入口72，在處理單元60A之各種構成零件的維修時，就會開啟。於維修出入口72，設有鎖芯73及電磁鎖74。操作者藉由將操作鎖匙插入鎖芯73並旋轉，而可以使處理單元60A的狀態，在維修模式與處理模式之間進行切換。A maintenance inlet / outlet 72 is provided on the side of the gate 71 of the processing unit 60A on the opposite side, and it is opened during maintenance of various components of the processing unit 60A. A lock core 73 and an electromagnetic lock 74 are provided at the maintenance entrance 72. The operator can switch the state of the processing unit 60A between the maintenance mode and the processing mode by inserting the operation key into the lock cylinder 73 and rotating it.
於各處理單元60A，設有氧氣濃度感測器S4（參照圖5），用以偵測單元外殼61之內部空間的氧氣濃度。Each processing unit 60A is provided with an oxygen concentration sensor S4 (refer to FIG. 5) for detecting the oxygen concentration in the internal space of the unit casing 61.
位於處理部5之下側部分5B的處理單元60B，亦具有與處理單元60A相同的構成。The processing unit 60B located in the lower portion 5B of the processing unit 5 also has the same configuration as the processing unit 60A.
如圖3及圖4所示，在處理部5之上側部分5A的上部，設有氮氣供給導管76A，用以對位於上側部分5A之各處理單元60A的氮氣供給部66供給氮氣，以作為氛圍調整氣體。在各處理單元60A的氮氣供給部66與氮氣供給導管76A之間，設有開閉閥66V。再者，在處理部5之上側部分5A的上部，設有空氣供給導管78A，用以對位於上側部分5A之各處理單元60A的空氣供給口（通氣路徑）69供給空氣，以作為吹洗氣體。在各處理單元60A的空氣供給口69與空氣供給導管78A之間，設有開閉閥69V。在處理部5之上側部分5A的上部，設有排氣導管79A，供處理單元60A之排氣路徑67所排出之氣體或混合流體流入。As shown in FIGS. 3 and 4, a nitrogen supply pipe 76A is provided above the upper portion 5A of the processing portion 5 to supply nitrogen to the nitrogen supply portion 66 of each processing unit 60A located at the upper portion 5A as an atmosphere. Adjust the gas. An on-off valve 66V is provided between the nitrogen supply unit 66 and the nitrogen supply pipe 76A of each processing unit 60A. In addition, an air supply duct 78A is provided in an upper portion of the upper portion 5A of the processing portion 5 to supply air to an air supply port (ventilation path) 69 of each processing unit 60A located in the upper portion 5A as a purge gas. . An on-off valve 69V is provided between the air supply port 69 and the air supply duct 78A of each processing unit 60A. An exhaust duct 79A is provided at an upper portion of the upper portion 5A of the processing unit 5, and a gas or a mixed fluid discharged from the exhaust path 67 of the processing unit 60A flows in.
在處理部5之下側部分5B，亦以相同於上側部分5A的形態，設有氮氣供給導管76B、空氣供給導管78B及排氣導管79B。The lower portion 5B of the processing unit 5 is also provided with a nitrogen supply duct 76B, an air supply duct 78B, and an exhaust duct 79B in the same form as the upper portion 5A.
排氣導管79A及排氣導管79B，一路延伸到處理部5之機殼的底面板之高度位置。The exhaust duct 79A and the exhaust duct 79B extend all the way to the height position of the bottom panel of the casing of the processing section 5.
在圍繞第1搬運部3的內部空間——也就是第1搬運空間33——的板材中之天花板，設有風扇過濾器單元34，以在第1搬運空間33內形成氛圍調整氣體的降流（流向負Z方向）。在圍繞第1搬運空間33的板材中之底面板，設有排氣口35，用以從第1搬運空間33排出氛圍調整氣體。如圖2所示，亦可在排氣口35設置抽風扇35a，用以促進從第1搬運空間33排氣。A fan filter unit 34 is provided on the ceiling of the board surrounding the internal space of the first conveying section 3, that is, the first conveying space 33, so as to form a downflow of the atmosphere-adjusting gas in the first conveying space 33. (Flow to negative Z direction). An exhaust port 35 is provided on the bottom panel of the plate surrounding the first conveyance space 33 to exhaust the atmosphere-adjusting gas from the first conveyance space 33. As shown in FIG. 2, an exhaust fan 35 a may be provided at the exhaust port 35 to promote exhaust from the first conveyance space 33.
在圍繞第1搬運空間33的板材中之底面板，設有排氣口36，用以排出從第1搬運空間33導入第1基板搬運裝置32內的氛圍調整氣體，以排出第1基板搬運裝置32之表面及內部的灰塵、微粒等。如圖2所示，亦可在排氣口36設置抽風扇36a，用以促進排氣。An exhaust port 36 is provided on the bottom panel of the plate surrounding the first conveyance space 33 to exhaust the atmosphere-adjusting gas introduced into the first substrate conveyance device 32 from the first conveyance space 33 to exhaust the first substrate conveyance device. 32 surface dust and particles, etc. As shown in FIG. 2, an exhaust fan 36 a may be provided at the exhaust port 36 to promote exhaust.
如圖1所示，在圍繞第1搬運空間33的板材中之左側或右側的側面板，設有維修出入口37。藉由開啟維修出入口37，操作者可以進入第1搬運空間33，而進行第1基板搬運裝置32的維修等作業。As shown in FIG. 1, a maintenance entrance 37 is provided on the left or right side panel of the sheet material surrounding the first conveyance space 33. By opening the maintenance entrance 37, the operator can enter the first conveyance space 33 and perform operations such as maintenance of the first substrate conveyance device 32.
於維修出入口37，設有鎖芯38及電磁鎖39。操作者藉由將操作鎖匙插入鎖芯38並旋轉，而可以使第1搬運空間33及第2搬運空間50A、50B的狀態，在維修模式與處理模式之間進行切換。A lock cylinder 38 and an electromagnetic lock 39 are provided at the maintenance entrance 37. By inserting the operation key into the lock cylinder 38 and rotating it, the operator can switch the state of the first transport space 33 and the second transport space 50A, 50B between the maintenance mode and the processing mode.
如圖2所示，在介面部4之傳遞單元4A的上方，設有風扇過濾器單元41A。風扇過濾器單元41A，經由形成在圍繞第2搬運空間50A的板材中之介面部4側的側面板上的開口，而以大致水平方向對第2搬運空間50A內吹出氛圍調整氣體。藉此，形成在第2搬運空間50A內流向正X方向的氛圍調整氣體之側流。As shown in FIG. 2, a fan filter unit 41A is provided above the transmission unit 4A of the mesial portion 4. The fan filter unit 41A blows an atmosphere-adjusting gas into the second conveyance space 50A in a substantially horizontal direction through an opening formed in a side panel on the side of the mesas portion 4 in the plate surrounding the second conveyance space 50A. Thereby, the side flow of the atmosphere adjustment gas which flows to the positive X direction in the 2nd conveyance space 50A is formed.
在圍繞第2搬運空間50A的板材中之介面部4之相反側的側面板，設有排氣口53A，用以從第2搬運空間50A排出氛圍調整氣體。亦可在排氣口53A附近，設置用以促進氛圍調整氣體從第2搬運空間50A排出的風扇54A。上側之第2搬運空間50A的排氣口53A、與下側之第2搬運空間50B的排氣口53B，連接至一個排氣導管55。An exhaust port 53A is provided on a side panel on the opposite side of the intermediate surface portion 4 of the plate material surrounding the second conveyance space 50A, and is used to exhaust the atmosphere adjustment gas from the second conveyance space 50A. A fan 54A may be provided near the exhaust port 53A to promote the exhaustion of the atmosphere-adjusted gas from the second conveyance space 50A. The exhaust port 53A of the second transport space 50A on the upper side and the exhaust port 53B of the second transport space 50B on the lower side are connected to one exhaust duct 55.
如圖1及圖2所示，在第2搬運空間50A、50B之介面部4之相反側的邊緣部，分別設有維修出入口56A、56B。藉由開啟維修出入口56A，操作者可以進入第2搬運空間50A，而進行第2基板搬運裝置51A的維修等。於維修出入口56A，設有電磁鎖57。維修出入口56B，具有與維修出入口56A相同之構成及功能。As shown in FIGS. 1 and 2, maintenance entrances 56A and 56B are respectively provided on the edge portions on the opposite sides of the mesas portion 4 in the second conveyance spaces 50A and 50B. By opening the maintenance entrance 56A, the operator can enter the second conveyance space 50A and perform maintenance or the like of the second substrate conveyance device 51A. An electromagnetic lock 57 is provided at the maintenance entrance 56A. The maintenance entrance 56B has the same structure and function as the maintenance entrance 56A.
對於第2基板搬運裝置51A，也會為了排出該第2基板搬運裝置51A之表面及內部的灰塵、微粒等，而從第2搬運空間50A內導入氛圍調整氣體。用以由第2基板搬運裝置51A排出此氛圍調整氣體的排氣導管58A，就通過介面部4的內部，而一路延伸到此基板處理系統1之機殼的底面板下方。The second substrate transfer device 51A also introduces an atmosphere-adjusting gas from the second transfer space 50A in order to discharge dust, particles, and the like from the surface and inside of the second substrate transfer device 51A. An exhaust duct 58A for exhausting the atmosphere-adjusting gas from the second substrate carrying device 51A passes through the inside of the mesas portion 4 and extends all the way below the bottom panel of the casing of the substrate processing system 1.
關於上述這點，第2基板搬運裝置51B及第2搬運空間50B，係與第2基板搬運裝置51A及第2搬運空間50A相同，具有同樣的排氣導管58B。在排氣導管58A、58B的下游端，亦可設置用以促進排氣的抽風扇56。In this regard, the second substrate transfer device 51B and the second transfer space 50B have the same exhaust duct 58B as the second substrate transfer device 51A and the second transfer space 50A. At the downstream ends of the exhaust ducts 58A and 58B, an exhaust fan 56 for promoting exhaust can also be provided.
第1搬運空間33，經由介面部4上側之傳遞單元4A的內部空間，而常態性地與上側之第2搬運空間50A連通，並且經由介面部4下側之傳遞單元4B的內部空間，而常態性地與下側之第2搬運空間50B連通。也就是說，可以視作第1搬運空間33、第2搬運空間50A及第2搬運空間50B形成了連續的一個搬運空間。此連續的一個搬運空間，在基板處理系統1正常運轉時，係與設置有基板處理系統1之無塵室內的氛圍常態性地隔離。又，就連第1搬運部3之前面板31的開口部開啟時，也由於在開口部裝上了容器C，所以無塵室內的氛圍不會侵入上述搬運空間（30、50A、50B）。上側之第2搬運空間50A與下側之第2搬運空間50B，並未直接連通，而係經由第1搬運空間33而連通。The first conveying space 33 is normally connected to the second conveying space 50A on the upper side via the internal space of the transmission unit 4A on the upper side of the mesas surface portion 4 and is normally on the way through the internal space of the transmitting unit 4B on the lower side of the mesas surface portion 4. It communicates with the second conveyance space 50B on the lower side. That is, it can be considered that the first conveyance space 33, the second conveyance space 50A, and the second conveyance space 50B form a continuous conveyance space. This continuous one conveyance space is normally isolated from the atmosphere in the clean room in which the substrate processing system 1 is installed during the normal operation of the substrate processing system 1. In addition, even when the opening of the front panel 31 of the first conveying section 3 is opened, the container C is mounted in the opening, so that the atmosphere in the clean room does not enter the conveying space (30, 50A, 50B). The second conveyance space 50A on the upper side and the second conveyance space 50B on the lower side are not directly communicated, but are communicated through the first conveyance space 33.
在基板處理系統1正常運轉時，各處理單元60A之內部空間係與第2搬運空間50A隔離，再者，各處理單元60B之內部空間係與第2搬運空間50B隔離（為了搬出搬入基板而開啟閘門71時除外）。再者，在基板處理系統1正常運轉時，各處理單元60A、60B之內部空間，係與設置有基板處理系統1之無塵室內的氛圍隔離。When the substrate processing system 1 is operating normally, the internal space of each processing unit 60A is isolated from the second conveyance space 50A, and the internal space of each processing unit 60B is isolated from the second conveyance space 50B (opened for loading and unloading substrates) Except gate 71). Furthermore, when the substrate processing system 1 is operating normally, the internal space of each processing unit 60A, 60B is isolated from the atmosphere in the clean room in which the substrate processing system 1 is installed.
接著，針對用以對第1搬運空間33、第2搬運空間50A、50B及處理單元60供給氛圍調整氣體的氣體供給／循環系統，進行說明。Next, a gas supply / circulation system for supplying the atmosphere-adjusting gas to the first transfer space 33, the second transfer spaces 50A, 50B, and the processing unit 60 will be described.
於本說明書中，所謂的氛圍調整氣體，係意指藉由對空間供給該氛圍調整氣體，而可以使該空間之氛圍不同於無塵室內之潔淨空氣氛圍（清淨空氣氛圍）的任何氣體。氛圍調整氣體，例如係惰性氣體，具體而言係氮氣。藉由對搬運空間30、50A、50B或處理單元60之內部空間供給氮氣，而使這些的內部空間，變成氧氣濃度低於無塵室內的潔淨空氣、並且係低濕度的氛圍。氛圍調整氣體，亦可係氮氣以外的惰性氣體，亦可係濕度低於無塵室內之清淨空氣的乾燥空氣、或二氧化碳氣體等等。In this specification, the so-called atmosphere-adjusting gas means any gas that can make the atmosphere of the space different from the clean air atmosphere (clean air atmosphere) in the clean room by supplying the atmosphere-adjusting gas to the space. The atmosphere adjusting gas is, for example, an inert gas, and specifically, nitrogen. Nitrogen is supplied to the internal spaces of the transportation spaces 30, 50A, 50B or the processing unit 60, so that these internal spaces become a low-humidity atmosphere with lower oxygen concentration than clean air in a clean room. The atmosphere adjustment gas may also be an inert gas other than nitrogen, or dry air or carbon dioxide gas with a humidity lower than that of clean air in a clean room.
如圖5所示，基板處理系統1的氣體供給／循環系統，具有氣體供給排出機構80。在設於氣體供給排出機構80內之內部管路80L的下游端，連接著氣體供給管路81。氣體供給管路81，分支成第1、第2及第3分支供給管路811、812、813。第1分支供給管路811，連接至風扇過濾器單元34。第2分支供給管路812，連接至風扇過濾器單元41A。第3分支供給管路813，連接至風扇過濾器單元41B。As shown in FIG. 5, the gas supply / circulation system of the substrate processing system 1 includes a gas supply and discharge mechanism 80. A gas supply pipe 81 is connected to the downstream end of the internal pipe 80L provided in the gas supply and discharge mechanism 80. The gas supply line 81 is branched into first, second, and third branch supply lines 811, 812, and 813. The first branch supply line 811 is connected to the fan filter unit 34. The second branch supply line 812 is connected to the fan filter unit 41A. The third branch supply line 813 is connected to the fan filter unit 41B.
第1搬運空間33的排氣口35，連接著第1分支排氣管路821。第1基板搬運裝置32的排氣口36，連接著第2分支排氣管路822。與上側之第2搬運空間50A的排氣口53A及下側之第2搬運空間50B的排氣口53B相連的排氣導管55，連接著第3分支排氣管路823。第2基板搬運裝置51A、51B的排氣導管58A、58B，連接著第4分支排氣管路824。第1～第4分支排氣管路821～824合流而成排氣管路82，並連接至氣體供給排出機構80內之內部管路80L的上游端。The exhaust port 35 of the first transfer space 33 is connected to the first branch exhaust pipe 821. The exhaust port 36 of the first substrate transfer device 32 is connected to a second branch exhaust pipe 822. The exhaust duct 55 connected to the exhaust port 53A of the upper second transport space 50A and the exhaust port 53B of the lower second transport space 50B is connected to the third branch exhaust pipe 823. The exhaust ducts 58A and 58B of the second substrate conveying devices 51A and 51B are connected to a fourth branch exhaust duct 824. The first to fourth branch exhaust lines 821 to 824 merge to form an exhaust line 82 and is connected to the upstream end of the internal line 80L in the gas supply and exhaust mechanism 80.
藉由內部管路80L、氣體供給管路81、第1～第3分支供給管路811～813、第1～第4分支排氣管路821～824、排氣管路82而形成循環路徑；再藉由此循環路徑與搬運空間33、50A、50B，而形成氛圍調整氣體所循環的循環系統。The circulation path is formed by the internal pipeline 80L, the gas supply pipeline 81, the first to third branch supply pipelines 811 to 813, the first to fourth branch exhaust pipelines 821 to 824, and the exhaust pipeline 82; A circulation system through which the atmosphere-adjusted gas is circulated is formed by the circulation path and the conveying spaces 33, 50A, and 50B.
亦可在第1、第2及第3分支供給管路811、812、813，以及第1～第4分支排氣管路821～824的局部，設置節風門（未圖示）。藉此，可以調節在各搬運空間33、50A、50B內流動之氣體流量的平衡、各搬運空間33、50A、50B之內壓的平衡等等。氣體流量及內壓的平衡，亦可藉由調整附設在各搬運空間33、50A、50B的風扇過濾器單元34、41A、41B之風扇的轉速，來進行調整。也就是說，上述未圖示之節風門及風扇，發揮壓力調整設備的功能。Throttle valves (not shown) may be provided in parts of the first, second, and third branch supply lines 811, 812, and 813, and in the first to fourth branch exhaust lines 821 to 824. Thereby, the balance of the gas flow rate flowing in each of the transfer spaces 33, 50A, 50B, the balance of the internal pressure of each of the transfer spaces 33, 50A, 50B, and the like can be adjusted. The balance of the gas flow rate and the internal pressure can also be adjusted by adjusting the rotation speed of the fans of the fan filter units 34, 41A, and 41B attached to each of the transport spaces 33, 50A, and 50B. That is to say, the above-not shown throttle valve and fan function as a pressure adjustment device.
第2搬運空間50A（50B）的壓力，較佳係略高於面向該第2搬運空間50A（50B）之處理單元60A（60B）的壓力。藉由如此，可以防止化學物質從處理單元60A（60B）流入第2搬運空間50A（50B）而導致第2搬運空間50A（50B）受到汙染。The pressure of the second conveyance space 50A (50B) is preferably slightly higher than the pressure of the processing unit 60A (60B) facing the second conveyance space 50A (50B). By doing this, it is possible to prevent the chemical substances from flowing from the processing unit 60A (60B) into the second transfer space 50A (50B) and contamination of the second transfer space 50A (50B).
氣體供給排出機構80的內部管路80L，連接著氮氣供給管801a及氣體供給管（循環系統通氣路徑）802a；該氮氣供給管801a連接至氮氣供給源801（N2 ），該氣體供給管802a連接至清淨空氣供給源802（AIR）。氮氣供給源801，係以設於半導體製造工廠的工廠生產資源來提供。清淨空氣供給源802，可係以設於半導體製造工廠的工廠生產資源來提供者，亦可係朝向無塵室內開口之清淨空氣的吸入口。氮氣供給管801a及氣體供給管802a分別連接著開閉閥801b、802b。The internal pipeline 80L of the gas supply and exhaust mechanism 80 is connected to a nitrogen supply pipe 801a and a gas supply pipe (circulation system ventilation path) 802a. The nitrogen supply pipe 801a is connected to a nitrogen supply source 801 (N 2 ) and the gas supply pipe 802a. It is connected to the clean air supply source 802 (AIR). The nitrogen supply source 801 is provided by factory production resources provided in a semiconductor manufacturing factory. The clean air supply source 802 may be provided by a factory production resource provided in a semiconductor manufacturing factory, or may be a suction port for clean air opened toward a clean room. The nitrogen supply pipe 801a and the gas supply pipe 802a are connected to the on-off valves 801b and 802b, respectively.
氣體供給排出機構80，具有設於內部管路80L中途的鼓風機803，可以使流入鼓風機803的氣體，增加壓力而送出至下游側。氣體供給排出機構80的內部管路80L，連接著通往工廠排氣系統的排氣管804。在排氣管804，設有節風門804a。The gas supply and discharge mechanism 80 includes a blower 803 provided in the middle of the internal pipe 80L, and can increase the pressure of the gas flowing into the blower 803 and send it to the downstream side. An internal pipe 80L of the gas supply and exhaust mechanism 80 is connected to an exhaust pipe 804 leading to a factory exhaust system. The exhaust pipe 804 is provided with a throttle valve 804a.
藉由上述之內部管路80L、氣體供給管路81、排氣管路82（包含由這些管路81、82所分支出來的分支管路）、以及氣體供給排出機構80及上述之搬運空間33、50A、50B，而構成了氛圍調整氣體（或是作為吹洗氣體之清淨空氣）所循環的循環系統。The above-mentioned internal pipe 80L, gas supply pipe 81, exhaust pipe 82 (including branch pipes branched from these pipes 81 and 82), the gas supply and discharge mechanism 80, and the above-mentioned transportation space 33 , 50A, 50B, and constitute a circulation system that circulates the atmosphere adjustment gas (or clean air as the purge gas).
對於處理單元60A、60B，係藉由獨立於上述循環系統的系統，來供給氛圍調整氣體（或是作為吹洗氣體之清淨空氣）。氮氣供給導管76A、76B連接著氮氣供給源801，空氣供給導管78A、78B連接著清淨空氣供給源802，而可以將氮氣及清淨空氣分配至各處理單元60A、60B。The processing units 60A and 60B are supplied with an atmosphere-adjusting gas (or clean air as a purge gas) through a system independent of the circulation system described above. The nitrogen supply pipes 76A and 76B are connected to a nitrogen supply source 801, and the air supply pipes 78A and 78B are connected to a clean air supply source 802, so that nitrogen and clean air can be distributed to each of the processing units 60A and 60B.
如圖4及圖5所示，可以藉由附設於各處理單元60A、60B的開閉閥66V、69V，而從氛圍調整氣體或清淨空氣，擇一供給至各處理單元60A、60B。各處理單元60A、60B的排氣路徑67，連接著排氣導管79A、79B，可以將各處理單元60A、60B內的氣體，經由排氣路徑67及排氣導管79A、79B而排出至工廠排氣系統。As shown in FIGS. 4 and 5, the on-off valves 66V and 69V attached to the processing units 60A and 60B can be used to adjust the gas or the clean air from the atmosphere and supply the selected processing units 60A and 60B. The exhaust path 67 of each processing unit 60A and 60B is connected to the exhaust ducts 79A and 79B, and the gas in each processing unit 60A and 60B can be discharged to the factory exhaust via the exhaust path 67 and the exhaust ducts 79A and 79B. Air system.
基板處理系統1，具備控制裝置100。控制裝置100，係例如電腦，具備控制部101及記憶部102。記憶部102儲存著程式，該程式控制基板處理系統1所執行之各種處理。控制部101藉由叫出記憶部102所儲存之程式並加以執行，而控制基板處理系統1的動作。The substrate processing system 1 includes a control device 100. The control device 100 is, for example, a computer, and includes a control unit 101 and a memory unit 102. The memory unit 102 stores programs that control various processes performed by the substrate processing system 1. The control unit 101 controls the operation of the substrate processing system 1 by calling a program stored in the memory unit 102 and executing it.
又，該程式係儲存於電腦可讀取之記錄媒體，亦可係由該記錄媒體安裝至控制裝置100之記憶部102者。作為電腦可讀取之記錄媒體，例如有硬碟（HD）、軟性磁碟（FD）、光碟（CD）、磁光碟（MO）、記憶卡等等。In addition, the program is stored in a computer-readable recording medium, and may be installed in the memory portion 102 of the control device 100 from the recording medium. As a computer-readable recording medium, there are, for example, a hard disk (HD), a flexible magnetic disk (FD), an optical disk (CD), a magneto-optical disk (MO), a memory card, and the like.
以下將針對基板處理系統1之動作，進行說明。The operation of the substrate processing system 1 will be described below.
在基板處理系統1，首先，從載置於容器載置部20上的容器C，以第1基板搬運裝置32取出基板W，並將基板W載置於傳遞單元4A（或4B）。第2基板搬運裝置51A（或51B）將基板W搬入處理單元60A（或60B），並在處理單元60A（或60B）內對基板W施行既定之液體處理。完成處理的基板W，會以第2基板搬運裝置51A（或51B），而從處理單元60A（或60B）搬出，並載置於傳遞單元4A（或4B）。之後，第1基板搬運裝置32，會使載置於傳遞單元4A（或4B）的基板W回到原本的容器C。In the substrate processing system 1, first, the substrate W is taken out from the container C placed on the container mounting section 20 by the first substrate transfer device 32, and the substrate W is placed on the transfer unit 4A (or 4B). The second substrate transfer device 51A (or 51B) carries the substrate W into the processing unit 60A (or 60B), and performs predetermined liquid processing on the substrate W in the processing unit 60A (or 60B). The processed substrate W is removed from the processing unit 60A (or 60B) by the second substrate transfer device 51A (or 51B) and placed on the transfer unit 4A (or 4B). After that, the first substrate transfer device 32 returns the substrate W placed on the transfer unit 4A (or 4B) to the original container C.
在基板處理系統1啟動之際，開閉閥801b會開啟，並由氮氣供給源801對氣體供給排出機構80供給氮氣，氣體供給排出機構80會以鼓風機803而將氮氣送出至氣體供給管路81。藉此，會藉由風扇過濾器單元34而在第1搬運空間33形成氮氣的降流，同時會藉由風扇過濾器單元41A、41B而在第2搬運空間50A、50B形成氮氣的側流。在供給氮氣前就存在於搬運空間33、50A、50B的空氣，會被氮氣趕走，並經由第1～第4分支排氣管路821～824及排氣管路82而流入氣體供給排出機構80。流入氣體供給排出機構80的空氣，會經由排氣管804而排出至工廠排氣系統。藉此，原本存在於搬運空間33、50A、50B以及氣體供給管路81及排氣管路82等所構成之循環系統內的空氣，就會被置換成氮氣。又，為了有效率地進行此置換，亦可在氣體供給排出機構80之內部管路80L的部分805（參照圖5），設置防止從氮氣供給源801所供給之氮氣逆流至排氣管路82側的逆止閥、或開閉閥（未圖示）。When the substrate processing system 1 is started, the on-off valve 801 b is opened, and nitrogen gas is supplied from the nitrogen supply source 801 to the gas supply and exhaust mechanism 80. The gas supply and exhaust mechanism 80 sends nitrogen to the gas supply line 81 by a blower 803. Thereby, a downward flow of nitrogen is formed in the first conveyance space 33 by the fan filter unit 34, and a side flow of nitrogen is formed in the second conveyance spaces 50A and 50B by the fan filter units 41A and 41B. The air existing in the conveying spaces 33, 50A, and 50B before the nitrogen is supplied will be driven away by the nitrogen and flow into the gas supply and exhaust mechanism through the first to fourth branch exhaust lines 821 to 824 and the exhaust line 82. 80. The air flowing into the gas supply and exhaust mechanism 80 is exhausted to the factory exhaust system through the exhaust pipe 804. Thereby, the air originally existing in the circulation system constituted by the conveyance spaces 33, 50A, 50B, and the gas supply pipe 81 and the exhaust pipe 82 is replaced with nitrogen. In order to perform this replacement efficiently, a portion 805 (see FIG. 5) of the internal pipeline 80L of the gas supply and exhaust mechanism 80 may be provided to prevent the nitrogen gas supplied from the nitrogen supply source 801 from flowing back to the exhaust pipeline 82. Side check valve or on-off valve (not shown).
在循環系統內的氛圍置換成氮氣後，鼓風機803就會繼續被驅動，氮氣會在上述循環系統內流動。在如此這般地使氮氣循環的情況下，相較於使得供給至搬運空間33、50A、50B的氮氣係一次性使用的情況，可以大幅削減氮氣的使用量。After the atmosphere in the circulation system is replaced with nitrogen, the blower 803 will continue to be driven, and the nitrogen will flow in the circulation system. When the nitrogen gas is circulated as described above, the amount of nitrogen gas used can be significantly reduced compared to a case where the nitrogen-based system supplied to the transfer spaces 33, 50A, and 50B is used once.
又，若有大量氮氣洩漏至基板處理系統1之周圍，則有對人體造成危險之虞，所以亦可在基板處理系統1之周圍設置氧氣濃度感測器，以監控基板處理系統1之周圍的氧氣濃度。In addition, if a large amount of nitrogen leaks around the substrate processing system 1, it may cause danger to the human body. Therefore, an oxygen concentration sensor may be installed around the substrate processing system 1 to monitor the surroundings of the substrate processing system 1. Oxygen concentration.
另一方面，於各處理單元60A、60B，也是在開閉閥69V關閉之狀態下，使開閉閥66V開啟，藉此而由氮氣供給源801供給氮氣至各處理單元60A、60B，使各處理單元60A、60B內的空氣置換成氮氣。On the other hand, in each of the processing units 60A and 60B, when the on-off valve 69V is closed, the on-off valve 66V is opened, thereby supplying nitrogen from the nitrogen supply source 801 to each of the processing units 60A and 60B, so that each processing unit The air in 60A and 60B was replaced with nitrogen.
待循環系統及各處理單元60A、60B內置換成氮氣氛圍，就可以進行從上述容器C之基板W搬運及處理。氮氣氛圍之置換完成，可以藉由設在第1搬運空間33內的氧氣濃度感測器S1、設在第2搬運空間50A內的氧氣濃度感測器S2、設在第2搬運空間50A內的氧氣濃度感測器S3、以及設在各處理單元60A、60B內的氧氣濃度感測器S4來確認。After the circulation system and the processing units 60A and 60B are replaced with a nitrogen atmosphere, the substrate W from the container C can be transferred and processed. The replacement of the nitrogen atmosphere is completed by the oxygen concentration sensor S1 provided in the first transfer space 33, the oxygen concentration sensor S2 provided in the second transfer space 50A, and the oxygen concentration sensor S2 provided in the second transfer space 50A. The oxygen concentration sensor S3 and the oxygen concentration sensor S4 provided in each of the processing units 60A and 60B are confirmed.
又，為了確認氮氣有確實地在循環系統內循環，亦可在第1～第3分支供給管路811～813及第1～第4分支排氣管路821～824中之至少數個，設置壓力錶。In addition, in order to confirm that nitrogen gas is circulated in the circulation system, at least several of the first to third branch supply lines 811 to 813 and the first to fourth branch exhaust lines 821 to 824 may be provided. Pressure gauge.
在操作者或作業員為了維修而進入搬運空間33、50A、50B內時，搬運空間33、50A、50B內的氧氣濃度必須要在適切數值，以免因吸入低氧濃度之氣體而對人體產生危害。When the operator or operator enters the transportation space 33, 50A, 50B for maintenance, the oxygen concentration in the transportation space 33, 50A, 50B must be a proper value to avoid harm to the human body by inhaling low oxygen concentration gas .
一旦操作者藉由操作鎖匙（未圖示）來操作鎖芯38，而使第1搬運空間33及第2搬運空間50A、50B的狀態轉換成維修模式，則所有的基板搬運裝置（第1基板搬運裝置32、第2基板搬運裝置51A、51B）的動作都會停止。再者，開閉閥801b關閉之同時，開閉閥802b會開啟，藉此而使作為吹洗氣體的清淨空氣之供給源802將清淨空氣供給至氣體供給排出機構80的內部管路80L，同時氣體會從排氣管804排出。藉此，原先存在於循環系統的氮氣，就會置換成清淨空氣。一旦以氧氣濃度感測器S1～S3所偵測之氧氣濃度達到對人體安全的氧氣濃度，例如偵測已達到19.5%以上，就解除作為各維修出入口37、56A、56B之門鎖機構的電磁鎖39、57。藉此，操作者就可以開啟維修出入口37、56A、56B而進入搬運空間33、50A、50B內。此電磁鎖39、57之上鎖／解鎖控制可藉由獨立之安全裝置來進行，亦可藉由設在控制裝置100的安全裝置功能來進行。Once the operator operates the key cylinder 38 by operating a key (not shown), and the states of the first transport space 33 and the second transport space 50A, 50B are changed to the maintenance mode, all the substrate transport devices (the first substrate The operations of the transfer device 32 and the second substrate transfer devices 51A and 51B) are stopped. In addition, when the on-off valve 801b is closed, the on-off valve 802b is opened, thereby causing the clean air supply source 802, which is the purge gas, to supply clean air to the internal pipe 80L of the gas supply and discharge mechanism 80, and at the same time, the gas will It is discharged from the exhaust pipe 804. As a result, the nitrogen originally present in the circulation system will be replaced with clean air. Once the oxygen concentration detected by the oxygen concentration sensors S1 to S3 reaches the oxygen concentration that is safe for the human body, for example, the detection has reached more than 19.5%, the electromagnetic of the door lock mechanism as the maintenance entrance 37, 56A, 56B is released. Lock 39, 57. Thereby, the operator can open the maintenance entrances 37, 56A, and 56B and enter the transportation spaces 33, 50A, and 50B. The locking / unlocking control of the electromagnetic locks 39 and 57 may be performed by an independent security device, or may be performed by a security device function provided in the control device 100.
又，在此情況下，處理單元60A、60B內仍維持在氮氣氛圍的狀態下亦可。In this case, the processing units 60A and 60B may be maintained in a state of a nitrogen atmosphere.
在欲維修為數複數個之處理單元60A、60B中的一部分，例如一個處理單元60A時，就操作設在該處理單元60A之維修出入口72的鎖芯73，而使該處理單元60A的狀態變成維修模式。如此一來，該處理單元60A就會在維持此時之狀態下而停止。開閉閥66V會關閉，同時開閉閥69V會開啟，藉此，另會停止對處理單元60A內的氮氣供給、且開始清淨空氣之供給。一旦氧氣濃度感測器S4偵測到該處理單元60A內的氧氣濃度達到對人體係安全的氧氣濃度，則該處理單元60A的電磁鎖74會解除，維修出入口72就變成可以開啟。此電磁鎖74之上鎖／解鎖控制可藉由獨立之安全裝置來進行，亦可藉由設在控制裝置100的安全裝置功能來進行。When it is desired to repair a part of a plurality of processing units 60A, 60B, such as one processing unit 60A, the lock cylinder 73 provided at the maintenance entrance 72 of the processing unit 60A is operated, so that the state of the processing unit 60A becomes maintenance. mode. As a result, the processing unit 60A is stopped while maintaining the state at this time. The on-off valve 66V is closed, and at the same time, the on-off valve 69V is opened, thereby stopping the supply of nitrogen to the processing unit 60A and starting the supply of clean air. Once the oxygen concentration sensor S4 detects that the oxygen concentration in the processing unit 60A reaches an oxygen concentration that is safe for human systems, the electromagnetic lock 74 of the processing unit 60A will be released, and the maintenance entrance 72 will be opened. The locking / unlocking control of the electromagnetic lock 74 may be performed by an independent security device, or may be performed by a security device function provided in the control device 100.
僅開啟為數複數個之處理單元60A、60B中的一部分的維修出入口72之操作，可以在仍持續搬運空間33、50A、50B內的基板W搬運之狀態下進行。The operation of opening only a part of the maintenance entrances 72 of the plurality of processing units 60A and 60B can be carried out while the substrates W in the space 33, 50A, and 50B are still being conveyed.
藉由上述實施形態，透過使得用以調整氛圍而供給至搬運空間33、50A、50B的氮氣重複使用，而可以削減氮氣的消耗量，降低基板處理系統的維修成本。According to the above-mentioned embodiment, by repeatedly using the nitrogen gas supplied to the transfer spaces 33, 50A, and 50B for adjusting the atmosphere, the consumption of nitrogen gas can be reduced, and the maintenance cost of the substrate processing system can be reduced.
再者，若藉由上述實施形態，由於維修出入口之開閉允許係基於偵測到的氧氣濃度來下達，所以可以確保操作者的安全。Furthermore, according to the above embodiment, since the opening and closing of the maintenance entrance is allowed to be issued based on the detected oxygen concentration, the safety of the operator can be ensured.
又，於上述實施形態，係經由風扇過濾器單元34、41A、41B而對第1搬運空間33、上側之第2搬運空間50A及下側之第2搬運空間50B供給氛圍調整氣體，但並不限定於此。例如，只要氣體供給排出機構80具有足以在搬運空間33、50A、50B內形成必要之氛圍調整氣體之流動的驅動力（風量、風壓），則亦可使用不具備風扇的過濾器單元來取代風扇過濾器單元34、41A、41B。In the above-mentioned embodiment, the atmosphere-adjusting gas is supplied to the first conveyance space 33, the second conveyance space 50A on the upper side, and the second conveyance space 50B on the lower side through the fan filter units 34, 41A, and 41B. Limited to this. For example, as long as the gas supply / exhaust mechanism 80 has a driving force (air volume, wind pressure) sufficient to form the necessary atmosphere adjustment gas flow in the conveying spaces 33, 50A, 50B, a filter unit without a fan may be used instead. Fan filter units 34, 41A, 41B.
再者，於上述實施形態（以下為了加以區別，亦稱為「第1實施形態」），設於基板處理系統1之所有的搬運空間（33、50A、50B），與連接至這些搬運空間的管路（81、82、80L、811、812、821、822、823、824），形成了單一的循環系統，但並不限定於此。例如，如圖6所示之第2實施形態，亦可使第1搬運空間33，與連接至第1搬運空間33的管路81N、82N、811所構成之循環系統（以下稱為「第1循環系統」）從上述單一的循環系統分離。在此情況下，會設置第1循環系統専用的氣體供給排出機構80N。氣體供給排出機構80N之構成，與圖6右側所示之氣體供給排出機構80之構成相同即可。在此情況下，就是由第2搬運空間50A、50B，與連接至第2搬運空間50A、50B的管路（81、82、80L、812、823、824），與氣體供給排出機構80，來構成基板處理系統1的第2循環系統。於圖6所示之第2實施形態，對於與設在第1實施形態之構成要素相同的構成要素，會標註相同符號，並省略重複說明。In addition, in the above-mentioned embodiment (hereinafter also referred to as "first embodiment" for the purpose of distinction), all the transfer spaces (33, 50A, 50B) provided in the substrate processing system 1 and the transfer spaces connected to these transfer spaces The pipes (81, 82, 80L, 811, 812, 821, 822, 823, 824) form a single circulation system, but it is not limited to this. For example, as in the second embodiment shown in FIG. 6, a circulation system (hereinafter referred to as "the first section") composed of the first transfer space 33 and the pipes 81N, 82N, and 811 connected to the first transfer space 33 may be used. "Circulation system") is separated from the single circulation system described above. In this case, a gas supply and exhaust mechanism 80N for the first circulation system is provided. The configuration of the gas supply / discharge mechanism 80N may be the same as the configuration of the gas supply / discharge mechanism 80 shown on the right side of FIG. 6. In this case, the second conveyance space 50A, 50B, the pipes (81, 82, 80L, 812, 823, 824) connected to the second conveyance space 50A, 50B, and the gas supply and exhaust mechanism 80 The second circulation system of the substrate processing system 1 is configured. In the second embodiment shown in FIG. 6, the same components as those provided in the first embodiment are denoted by the same reference numerals, and repeated description is omitted.
在圖6所示之第2實施形態，有下述優點。藉由將基板處理系統1的循環系統分割成第1循環系統與第2循環系統，以減少平均每一個循環系統的氣體流量，而可以縮小氣體流路（導管、管子等等）的最大剖面積。藉此，可以防止或抑制整個基板處理系統1之尺寸加大。在使用圖5所示之單一循環系統的情況下，由於平均每小時的氣體循環流量（單位係例如m3 ／min）要維持在夠大的同時，又要降低壓力損失，所以例如氣體供給管路81的剖面積需要相當大。The second embodiment shown in FIG. 6 has the following advantages. By dividing the circulation system of the substrate processing system 1 into a first circulation system and a second circulation system, the average gas flow rate of each circulation system is reduced, and the maximum cross-sectional area of the gas flow path (conduit, pipe, etc.) can be reduced. . This can prevent or suppress an increase in the size of the entire substrate processing system 1. In the case of using the single circulation system shown in FIG. 5, since the average gas circulation flow rate per hour (unit: m 3 / min) must be maintained sufficiently, and the pressure loss should be reduced, for example, the gas supply pipe The cross-sectional area of the road 81 needs to be quite large.
再者，在處理單元60A（60B）的閘門71開啟時，第2搬運空間50A（50B），係與處理單元60A（60B）的內部空間連通。因此，處理單元60A（60B）內部的氛圍（例如化學物質氛圍）會有流出至第2搬運空間50A（50B）內，而汙染第2搬運空間50A（50B）之虞。在有要求將第2搬運空間50A（50B）之氛圍中的化學物質濃度抑制到既定臨界值以下的情況，必須要提高既有之氛圍經由排氣管804的排出量、以及來自氮氣供給源801之新的氛圍調整氣體的供給量。另一方面，第1搬運空間33被外部侵入之物質汙染的可能性較低。因此，可以將來自第1循環系統之氣體排出量、及對第1循環系統之新的氮氣供給量壓低。也就是說，隨著要求條件，而相較於基板處理系統1具有單一循環系統之情況，可以將氮氣之供給量抑制至較低。再者，隨著要求條件，而相較於基板處理系統1具有單一循環系統之情況，可以削減風扇、鼓風機類（34、35a、36a、54A、54B、56）的耗電量。When the shutter 71 of the processing unit 60A (60B) is opened, the second conveyance space 50A (50B) communicates with the internal space of the processing unit 60A (60B). Therefore, the atmosphere (for example, a chemical substance atmosphere) inside the processing unit 60A (60B) may flow out into the second conveyance space 50A (50B) and contaminate the second conveyance space 50A (50B). When it is required to suppress the concentration of chemical substances in the atmosphere of the second conveyance space 50A (50B) below a predetermined threshold value, it is necessary to increase the amount of the existing atmosphere discharged through the exhaust pipe 804 and the nitrogen supply source 801 The new atmosphere adjusts the supply of gas. On the other hand, the first transport space 33 is less likely to be contaminated by externally invading substances. Therefore, it is possible to reduce the gas discharge amount from the first circulation system and the new nitrogen supply amount to the first circulation system. That is, according to the required conditions, compared with the case where the substrate processing system 1 has a single circulation system, the supply amount of nitrogen can be suppressed to a low level. Furthermore, according to the required conditions, the power consumption of fans and blowers (34, 35a, 36a, 54A, 54B, 56) can be reduced compared to the case where the substrate processing system 1 has a single circulation system.
再者，藉由使第1搬運空間33與第2搬運空間50A、50B使用各別的循環系統（第1循環系統、第2循環系統）來調整氛圍，可以將兩個搬運空間調整成各別的氛圍。例如對於只讓第2搬運空間50A、50B變成特別低氧濃度等的要求，也能彈性地因應。In addition, the first conveyance space 33 and the second conveyance spaces 50A and 50B use separate circulation systems (the first circulation system and the second circulation system) to adjust the atmosphere, so that the two transportation spaces can be adjusted to be separate. Atmosphere. For example, it is possible to flexibly respond to a request that only the second conveyance spaces 50A, 50B have a particularly low oxygen concentration.
針對相同於第2實施形態，使第1搬運空間與第2搬運空間使用各別的循環系統（第1循環系統、第2循環系統）來調整氛圍的其他實施形態（第3實施形態），將參照圖7以進行說明。於圖7所示之第3實施形態，對於與設在第1及第2實施形態之構成要素相同的構成要素，會標註相同符號，並省略重複說明。Regarding the other embodiment (the third embodiment) that is the same as the second embodiment, the first conveyance space and the second conveyance space use separate circulation systems (first circulation system, second circulation system) to adjust the atmosphere. Description will be made with reference to FIG. 7. In the third embodiment shown in FIG. 7, the same components as those provided in the first and second embodiments are denoted by the same reference numerals, and redundant descriptions are omitted.
原本在第1及第2實施形態中係分割成上下隔開之2個空間（第2搬運空間50A、50B）的搬運空間，在第3實施形態中係由單一的空間50C（第2搬運空間50C）所構成。第2搬運空間50C，係面向所有的處理單元60。於第2搬運空間50C內，設有單一的第2基板搬運裝置51C，可以與所有的處理單元60進行彼此之間的基板W之傳遞。於第3實施形態，第1搬運空間33及其內部的第1基板搬運裝置32之構成，與先前說明之第1及第2實施形態相同即可。於第3實施形態，係在第1搬運空間33與第2搬運空間50C之間，設有一個傳遞單元4C。在第1搬運空間33與第2搬運空間50C之間，亦可設置未處理基板専用的傳遞單元、以及完成處理基板専用的傳遞單元。Originally, in the first and second embodiments, the transportation space was divided into two spaces separated from each other (second transportation space 50A, 50B). In the third embodiment, a single space 50C (second transportation space) 50C). The second conveyance space 50C faces all the processing units 60. A single second substrate transfer device 51C is provided in the second transfer space 50C, and substrates W can be transferred to and from all the processing units 60. In the third embodiment, the configuration of the first transfer space 33 and the first substrate transfer device 32 therein may be the same as the first and second embodiments described above. In the third embodiment, one transfer unit 4C is provided between the first transfer space 33 and the second transfer space 50C. Between the first transfer space 33 and the second transfer space 50C, a transfer unit for processing an unprocessed substrate and a transfer unit for processing a processed substrate may be provided.
如圖7所示之第3實施形態的第1循環系統，相對於圖6所示之第2實施形態的第1循環系統，就以下幾點有所差異。從氣體供給排出機構80N出發、再回到氣體供給排出機構80N的循環管線（管路81N、811、821、82N），分支出路徑811B，再回到循環管線。在分支路徑811B，於中途設有傳遞單元4C。在傳遞單元4C的天花板部，設有風扇過濾器單元34B1。在傳遞單元4C的底板部，設有抽風扇34B2。風扇過濾器單元34B1，過濾了從分支路徑811B流入的氛圍調整氣體後，就朝下吹出到傳遞單元4C的內部空間。抽風扇34B2抽吸傳遞單元4C之內部空間的氛圍，再送出至分支路徑811B。也就是說，藉由風扇過濾器單元34B1及抽風扇34B2，在分支路徑811B流動的氣體就受到驅動。The first circulation system of the third embodiment shown in FIG. 7 is different from the first circulation system of the second embodiment shown in FIG. 6 in the following points. The circulation line (lines 81N, 811, 821, and 82N) starting from the gas supply and discharge mechanism 80N and then back to the gas supply and discharge mechanism 80N branches off the path 811B and returns to the circulation line. In the branch path 811B, a transmission unit 4C is provided halfway. A fan filter unit 34B1 is provided on the ceiling portion of the transmission unit 4C. An exhaust fan 34B2 is provided on a bottom plate portion of the transmission unit 4C. The fan filter unit 34B1 filters the atmosphere-adjusted gas flowing from the branch path 811B, and blows it downward into the internal space of the transmission unit 4C. The exhaust fan 34B2 sucks the atmosphere of the internal space of the transmission unit 4C and sends it out to the branch path 811B. That is, the fan filter unit 34B1 and the exhaust fan 34B2 drive the gas flowing through the branch path 811B.
如圖7所示之第3實施形態的第2循環系統，相對於圖6所示之第2實施形態的第2循環系統，就以下幾點有所差異。在第2搬運空間50C內，並不是形成側流，而是形成降流。也就是說，在區劃出基板處理系統1之機殼之中的第2搬運空間50C的部分（由複數個板材所構成）的天花板部，設有風扇過濾器單元41C；而在底板部，則設有抽風扇54C。風扇過濾器單元41C，過濾了從第2循環系統的循環管線（管路812）流入的氛圍調整氣體後，就朝下吹出到第2搬運空間50C。抽風扇54C抽吸第2搬運空間50C的氛圍，再送出至第2循環系統的循環管線（管路823）。也就是說，藉由風扇過濾器單元41C及抽風扇54C，在構成第2循環系統之管路（81、812、823、82等）流動的氣體就受到驅動。The second circulation system of the third embodiment shown in FIG. 7 is different from the second circulation system of the second embodiment shown in FIG. 6 in the following points. In the second conveyance space 50C, a downflow is not formed, but a downflow is formed. In other words, the fan filter unit 41C is provided on the ceiling portion (consisting of a plurality of plates) of the second conveyance space 50C in the casing of the substrate processing system 1; and in the bottom plate portion, Equipped with exhaust fan 54C. The fan filter unit 41C filters the atmosphere-adjusted gas flowing from the circulation line (pipe 812) of the second circulation system, and blows it downward to the second conveyance space 50C. The exhaust fan 54C sucks the atmosphere of the second conveyance space 50C, and sends it to the circulation line (line 823) of the second circulation system. That is, the fan filter unit 41C and the exhaust fan 54C drive the gas flowing through the pipes (81, 812, 823, 82, etc.) constituting the second circulation system.
若藉由上述第3實施形態，可以得到與第2實施形態大致相同的優點。According to the third embodiment described above, advantages substantially the same as those of the second embodiment can be obtained.
又，第1搬運空間33、第2搬運空間50C、及傳遞單元4C之內部空間的個別內壓，可以藉由調節對各空間推入氣體的力量（例如隨著風扇過濾器單元34、34B1藉由41C之轉速而變化）、和從各空間抽吸氣體的力量（例如隨著抽風扇35a、34B2、54C之轉速而變化）之平衡，而加以控制。較佳係使傳遞單元4C之內部空間內的壓力，設定成高於第1搬運空間33內的壓力、並且高於第2搬運空間50C內的壓力。傳遞單元4C，係基板W從容器C取出、到回到容器C為止的期間，最有可能長時間滯留的處所。藉由將傳遞單元4C內的壓力設定成最高，而可以大輻降低放置在傳遞單元4C之基板W附著灰塵等懸浮物質的可能性。In addition, the individual internal pressures of the internal spaces of the first conveying space 33, the second conveying space 50C, and the transmission unit 4C can be adjusted by the force of pushing the gas into each space (e.g., as the fan filter units 34, 34B1 borrow It is controlled by the balance between the rotation speed of 41C) and the power of sucking gas from each space (for example, it changes with the rotation speed of the extraction fans 35a, 34B2, and 54C). The pressure in the internal space of the transmission unit 4C is preferably set to be higher than the pressure in the first conveyance space 33 and higher than the pressure in the second conveyance space 50C. The transfer unit 4C is a place where the substrate W is most likely to stay for a long period of time from when the substrate W is taken out from the container C to when the substrate W is returned to the container C. By setting the pressure in the transfer unit 4C to the highest, it is possible to greatly reduce the possibility that the substrate W placed on the transfer unit 4C adheres to suspended matter such as dust.
又，在第1～第3實施形態的全體，只要風扇過濾器單元、抽風扇等能產生足以在循環系統內形成循環流的氣體驅動力，則亦可省略氣體供給排出機構80內的鼓風機803。In addition, in the entirety of the first to third embodiments, the blower 803 in the gas supply and discharge mechanism 80 may be omitted as long as a fan filter unit, a suction fan, and the like can generate a gas driving force sufficient to form a circulating flow in the circulation system. .
於本說明書所揭露之所有的實施形態，可以將彼此連接之第1搬運空間（33）、第2搬運空間（50A、50B、50C）及傳遞單元（4A、4B、4C）的內部空間，視作一個搬運空間。再者，在此情況下，可以將第1搬運空間視作上述搬運空間中之第1搬運區（33）；第2搬運空間視作上述搬運空間中之第2搬運區（50A、50B、50C）；傳遞單元（4A、4B、4C）的內部空間視作上述搬運空間中之連絡區，亦即可以視作是連絡第1搬運區（33）與第2搬運區（50A、50B、50C）的區域。再者，在設於基板處理系統1的循環路徑之中，連接至第1搬運區（33）而其本身構成循環路徑的部分可以視作第1循環路徑部分，連接至第2搬運區（50A、50B、50C）而其本身構成循環路徑的部分可以視作第2循環路徑部分。In all the embodiments disclosed in this specification, the internal spaces of the first transfer space (33), the second transfer space (50A, 50B, 50C) and the transfer unit (4A, 4B, 4C) connected to each other can be viewed as Make a moving space. Moreover, in this case, the first conveyance space can be regarded as the first conveyance area (33) in the conveyance space; the second conveyance space can be regarded as the second conveyance area (50A, 50B, 50C) in the conveyance space. ); The internal space of the transfer unit (4A, 4B, 4C) is regarded as the contact area in the above-mentioned transfer space, that is, it can be considered as the connection between the first transfer area (33) and the second transfer area (50A, 50B, 50C) Area. Furthermore, among the circulation paths provided in the substrate processing system 1, the part connected to the first conveyance area (33) and constituting the circulation path itself can be regarded as the first circulation path part and connected to the second conveyance area (50A). , 50B, 50C) and the part that constitutes the circulation path itself can be regarded as the second circulation path part.
氛圍調整氣體，亦可係氮氣以外的惰性氣體，亦可係濕度低於無塵室內之清淨空氣的乾燥空氣、或二氧化碳氣體等等。The atmosphere adjustment gas may also be an inert gas other than nitrogen, or dry air or carbon dioxide gas with a humidity lower than that of clean air in a clean room.
氣體供給排出機構80，可以設在基板處理系統1的機殼內部，亦可設置在外部。The gas supply and exhaust mechanism 80 may be provided inside the casing of the substrate processing system 1 or may be provided outside.
於上述實施形態，處理單元60係具備噴嘴64與杯體65的液體處理單元，但並不限定於此，處理單元60亦可以係例如使用超臨界流體而進行基板乾燥處理的乾燥處理單元、或是進行表面改質處理的表面處理單元。In the above-mentioned embodiment, the processing unit 60 is a liquid processing unit including the nozzle 64 and the cup body 65, but is not limited thereto. The processing unit 60 may be, for example, a drying processing unit that performs substrate drying processing using a supercritical fluid, or Surface treatment unit for surface modification.
在基板處理系統1處理的基板W，並不限定於半導體晶圓，亦可以係玻璃基板、陶瓷基板等，用以製造半導體裝置的各種基板。The substrate W processed in the substrate processing system 1 is not limited to a semiconductor wafer, and may be a glass substrate, a ceramic substrate, or the like, and is used to manufacture various substrates of a semiconductor device.
本次揭露之實施形態在所有觀點皆為例示，而非用以限定。上述實施形態，只要不脫離隨附之申請專利範圍及其主旨，可以進行各種形態之省略、置換、變更。The implementation form disclosed this time is an example in all points of view, rather than a limitation. The above-mentioned embodiments can be omitted, replaced, and changed in various forms as long as they do not depart from the scope of the attached patent application and the gist thereof.
W‧‧‧基板W‧‧‧ substrate
C‧‧‧基板搬運容器 C‧‧‧ substrate handling container
1‧‧‧基板處理系統 1‧‧‧ substrate processing system
101‧‧‧控制部 101‧‧‧Control Department
102‧‧‧記憶部 102‧‧‧Memory Department
2‧‧‧容器搬出搬入部 2‧‧‧Container moving out
20‧‧‧容器載置部 20‧‧‧ Container mounting section
3‧‧‧第1搬運部 3‧‧‧ the first porter
31‧‧‧前面板 31‧‧‧Front panel
34、34B1、41A、41B、41C‧‧‧風扇過濾器單元 34, 34B1, 41A, 41B, 41C‧‧‧fan filter unit
34B2、35a、36a、54C、56‧‧‧抽風扇 34B2, 35a, 36a, 54C, 56‧‧‧ exhaust fans
35、36、53A、53B‧‧‧排氣口 35, 36, 53A, 53B‧‧‧ exhaust port
38、73‧‧‧鎖芯 38, 73‧‧‧ lock cylinder
4‧‧‧介面部 4‧‧‧ Face
5‧‧‧處理部 5‧‧‧ Processing Department
5A‧‧‧上側部分 5A‧‧‧Upper part
5B‧‧‧下側部分 5B‧‧‧ lower part
54A、54B‧‧‧風扇 54A, 54B‧‧‧Fan
55、58A、58B、78B‧‧‧排氣導管 55, 58A, 58B, 78B‧‧‧ exhaust duct
60A、60B‧‧‧處理單元 60A, 60B‧‧‧Processing unit
33、50A、50B、4A、4B、4C‧‧‧搬運空間 33, 50A, 50B, 4A, 4B, 4C‧‧‧
33‧‧‧第1搬運區 33‧‧‧The first handling area
50A、50B、50C‧‧‧第2搬運區 50A, 50B, 50C‧‧‧ 2nd handling area
4A、4B、4C‧‧‧連絡區（傳遞單元） 4A, 4B, 4C‧‧‧ Contact Area (Transfer Unit)
32、51A、51B‧‧‧基板搬運機構（基板搬運裝置） 32, 51A, 51B ‧‧‧ substrate transfer mechanism (substrate transfer device)
32‧‧‧第1基板搬運裝置 32‧‧‧The first substrate conveying device
51A、51B、51C‧‧‧第2基板搬運裝置 51A, 51B, 51C‧‧‧Second substrate transfer device
61‧‧‧單元外殼 61‧‧‧unit housing
62‧‧‧處理機構 62‧‧‧ Processing Agency
63‧‧‧旋轉夾盤 63‧‧‧Rotary Chuck
64‧‧‧噴嘴 64‧‧‧ Nozzle
65‧‧‧杯體 65‧‧‧ cup body
68‧‧‧排液路徑 68‧‧‧Draining path
66V、69V、801b、802b‧‧‧開閉閥 66V, 69V, 801b, 802b‧‧‧ On-off valve
76A、76B、66‧‧‧第1氣體供給路徑（氮氣供給導管） 76A, 76B, 66‧‧‧ the first gas supply path (nitrogen supply duct)
67、79A、79B‧‧‧第1氣體排出路徑（排氣路徑、排氣導管） 67, 79A, 79B ‧‧‧ the first gas exhaust path (exhaust path, exhaust duct)
70‧‧‧開口 70‧‧‧ opening
71‧‧‧閘門 71‧‧‧Gate
78A‧‧‧空氣供給導管 78A‧‧‧Air supply duct
81、82、80L、811～813、821～824‧‧‧循環路徑 81, 82, 80L, 811 ～ 813, 821 ～ 824‧‧‧Circulation path
80、80N‧‧‧氣體供給排出機構 80, 80N‧‧‧Gas supply and exhaust mechanism
801‧‧‧氮氣供給源 801‧‧‧ Nitrogen Supply Source
801a‧‧‧第2氣體供給路徑（氮氣供給管） 801a‧‧‧Second gas supply path (nitrogen supply pipe)
802‧‧‧清淨空氣供給源 802‧‧‧ clean air supply source
802a‧‧‧循環系統通氣路徑 802a‧‧‧Circulation system ventilation path
803‧‧‧鼓風機 803‧‧‧blower
804‧‧‧第2氣體排出路徑（排氣管） 804‧‧‧The second gas exhaust path (exhaust pipe)
804a‧‧‧節風門 804a‧‧‧ Festival damper
805‧‧‧內部管路的部分 805‧‧‧ part of the internal pipeline
81N、82N‧‧‧管路 81N, 82N‧‧‧ pipeline
811B‧‧‧分支路徑 811B‧‧‧ Branch Path
37、56A、56B、72‧‧‧維修出入口 37, 56A, 56B, 72‧‧‧ Maintenance entrance
69‧‧‧單元通氣路徑 69‧‧‧unit ventilation path
39、57、74‧‧‧門鎖機構（電磁鎖） 39, 57, 74‧‧‧‧ door lock mechanism (electromagnetic lock)
S1～S4‧‧‧氧氣濃度感測器 S1 ～ S4‧‧‧ oxygen concentration sensor
100‧‧‧控制裝置（安全裝置） 100‧‧‧Control device (safety device)
【圖1】第1實施形態之基板處理系統的概略俯視圖。[Fig. 1] A schematic plan view of a substrate processing system according to a first embodiment.
【圖2】沿著圖1之II-II線的基板處理系統的概略剖面圖。 FIG. 2 is a schematic cross-sectional view of a substrate processing system taken along a line II-II in FIG. 1.
【圖3】沿著圖1之III-III線的基板處理系統的概略剖面圖。 FIG. 3 is a schematic cross-sectional view of the substrate processing system taken along the line III-III in FIG. 1.
【圖4】處理單元的概略縱剖面圖 [Fig. 4] A schematic longitudinal sectional view of a processing unit
【圖5】第1實施形態之基板處理系統的概略配管系統圖。 [Fig. 5] A schematic piping system diagram of the substrate processing system according to the first embodiment.
【圖6】第2實施形態之基板處理系統的概略配管系統圖。 [Fig. 6] A schematic piping system diagram of a substrate processing system according to a second embodiment.
【圖7】包含第3實施形態之基板處理系統的概略配管系統圖之概略剖面圖，且係在與圖2相同位置截斷的基板處理系統概略剖面圖。 FIG. 7 is a schematic cross-sectional view of a substrate processing system including a schematic piping system diagram of a substrate processing system according to a third embodiment, and is a schematic cross-sectional view of a substrate processing system cut at the same position as FIG.
Claims (14)
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| JP2018022427 | 2018-02-09 | ||
| JP2018-022427 | 2018-02-09 | ||
| JP2018-225780 | 2018-11-30 | ||
| JP2018225780A JP7358044B2 (en) | 2018-02-09 | 2018-11-30 | Substrate processing equipment |
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| TWI774921B TWI774921B (en) | 2022-08-21 |
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| JP7365200B2 (en) * | 2019-11-08 | 2023-10-19 | 東京エレクトロン株式会社 | Monitoring system |
| JP7545805B2 (en) * | 2020-02-07 | 2024-09-05 | 川崎重工業株式会社 | ROBOT AND SUBSTRATE TRANSFER SYSTEM COMPRISING THE ROBOT |
| JP7469997B2 (en) * | 2020-09-08 | 2024-04-17 | 株式会社日立ハイテク | Semiconductor Processing Equipment |
| JP7430677B2 (en) * | 2021-09-21 | 2024-02-13 | 株式会社Kokusai Electric | Substrate processing equipment, semiconductor device manufacturing method and program |
| JP7501497B2 (en) | 2021-11-10 | 2024-06-18 | 株式会社ダイフク | Container storage facilities |
| JP7501498B2 (en) | 2021-11-10 | 2024-06-18 | 株式会社ダイフク | Container storage facilities |
| KR20230089387A (en) * | 2021-12-13 | 2023-06-20 | 세메스 주식회사 | Substrate processing apparatus and substrate processing method |
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| JP3225344B2 (en) * | 1996-01-26 | 2001-11-05 | 東京エレクトロン株式会社 | Processing equipment |
| US6152070A (en) * | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
| JP2001102374A (en) | 1999-09-28 | 2001-04-13 | Tokyo Electron Ltd | Film-forming system |
| JP2001326162A (en) | 2000-05-17 | 2001-11-22 | Canon Inc | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
| JP2003100620A (en) | 2001-09-27 | 2003-04-04 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP4342147B2 (en) | 2002-05-01 | 2009-10-14 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| KR100486690B1 (en) * | 2002-11-29 | 2005-05-03 | 삼성전자주식회사 | Substrate processing apparatus and method for controlling contamination in substrate transfer module |
| JP4798981B2 (en) | 2004-10-28 | 2011-10-19 | 東京エレクトロン株式会社 | Substrate processing apparatus control method, substrate processing apparatus, and program for controlling substrate processing apparatus |
| JP5154102B2 (en) * | 2007-03-07 | 2013-02-27 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP4518285B2 (en) | 2008-01-18 | 2010-08-04 | セイコーエプソン株式会社 | Semiconductor device manufacturing equipment |
| US8186927B2 (en) * | 2008-05-27 | 2012-05-29 | Tdk Corporation | Contained object transfer system |
| WO2012133441A1 (en) | 2011-03-28 | 2012-10-04 | 株式会社日立国際電気 | Substrate processing device, method for manufacturing semiconductor device, and substrate processing method |
| JP2014038888A (en) | 2012-08-10 | 2014-02-27 | Hitachi High-Tech Control Systems Corp | Mini-environment device, and inner atmosphere replacement method of the same |
| JP6599599B2 (en) | 2014-01-31 | 2019-10-30 | シンフォニアテクノロジー株式会社 | EFEM system |
| JP6189780B2 (en) * | 2014-04-01 | 2017-08-30 | 東京エレクトロン株式会社 | Substrate processing system |
| JP6280837B2 (en) | 2014-08-12 | 2018-02-14 | 東京エレクトロン株式会社 | Substrate processing apparatus and method for controlling atmosphere of substrate mounting portion of substrate processing apparatus |
| KR101985370B1 (en) * | 2015-01-21 | 2019-06-03 | 가부시키가이샤 코쿠사이 엘렉트릭 | Substrate processing apparatus |
| JP6392143B2 (en) | 2015-02-24 | 2018-09-19 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium storing program for executing substrate processing method |
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| JP2019140379A (en) | 2019-08-22 |
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