JP2019140379A - Substrate processing apparatus - Google Patents

Abstract

To reduce the used amount of atmosphere adjusting gas while reliably adjusting an atmosphere in a required region.SOLUTION: A substrate processing apparatus includes: processing units (60A, 60B) performing a process on a substrate W; conveyance spaces (33, 50A, 50B) through which the substrate is conveyed between a container carrying in/out section (2) and the processing units; substrate conveyance mechanisms (32, 51A, 51B) configured to convey the substrate between the container carrying in/out section and the processing units through the conveyance spaces; first gas supply passages (76A, 76B, 66) configured to supply atmosphere adjusting gas to the processing units; a first gas discharge passage (67) configured to discharge the atmosphere adjusting gas from the processing units; circulation passages (81, 82, 80L) connected to the conveyance spaces and configured to return the atmosphere adjusting gas flowing out from the conveyance spaces to the conveyance spaces; a second gas supply passage (801a) configured to supply the atmosphere adjusting gas to a circulation system constituted by the conveyance spaces and the circulation passages; and a second gas discharge passage (804) configured to discharge the atmosphere adjusting gas from the circulation system.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a substrate processing apparatus having a function of adjusting an atmosphere around a substrate.

  Various processes are performed on a substrate such as a semiconductor wafer in order to manufacture a semiconductor device. When performing a certain process, the substrate is carried into a substrate processing apparatus while being accommodated in a substrate transport container such as FOUP. Next, the substrate is taken out from the substrate transfer container by the substrate transfer device and is carried into the processing chamber where the substrate is processed. Thereafter, the substrate is taken out from the processing chamber by the substrate transfer device and carried into the original substrate transfer container. .

  An atmospheric atmosphere in a clean room containing a relatively large amount of oxygen may cause a problematic level of oxidation on the surface of the substrate. In order to prevent this, at least a part of the region through which the substrate passes after being unloaded from the substrate transport container and returned to the substrate transport container is made a low oxygen concentration gas atmosphere (for example, Patent Documents). 1).

  In some cases, it is required that the entire region through which the substrate passes before being returned to the substrate transport container after being unloaded from the substrate transport container is in a low oxygen concentration gas atmosphere. In this case, it is necessary to distribute a large amount of low oxygen concentration gas inside the substrate processing apparatus, which consumes a great deal of factory power.

JP 2001-102374 A

  An object of the present invention is to reduce the amount of gas used for adjusting the atmosphere while reliably adjusting the atmosphere of the space in the substrate processing apparatus.

  According to one embodiment of the present invention, a container carry-in / out unit on which a substrate transport container containing a substrate is placed, a processing unit for processing the substrate, and a substrate between the container carry-in / out unit and the processing unit A transport space for transporting the substrate, a substrate transport mechanism for transporting the substrate between the container carry-in / out section and the processing unit in the transport space, and a first for supplying an atmosphere adjustment gas to the processing unit. 1 gas supply path, a first gas discharge path for discharging the atmosphere adjustment gas from the processing unit, and a circulation connected to the transfer space and returning the atmosphere adjustment gas flowing out of the transfer space to the transfer space A second gas supply path for supplying the atmosphere adjustment gas to a circulation system composed of a passage, the transfer space, and the circulation path, and the atmosphere adjustment gas is discharged from the circulation system. A second gas discharge passage because, a substrate processing apparatus having a are provided.

  According to the embodiment of the present invention, since the atmosphere adjustment gas for adjusting the atmosphere of the transfer space is circulated and repeatedly used, the usage amount of the atmosphere adjustment gas can be reduced, and the running of the substrate processing apparatus is performed. Costs and burden on factory power can be reduced.

1 is a schematic plan view of a substrate processing system according to a first embodiment. It is a schematic sectional drawing of the substrate processing system along the II-II line of FIG. FIG. 3 is a schematic cross-sectional view of the substrate processing system taken along line III-III in FIG. 1. It is a schematic longitudinal cross-sectional view of a processing unit. 1 is a schematic piping system diagram of a substrate processing system according to a first embodiment. It is a schematic piping system diagram of the substrate processing system concerning a 2nd embodiment. FIG. 5 is a schematic cross-sectional view including a schematic piping system diagram of a substrate processing system according to a third embodiment, and is a schematic cross-sectional view of a substrate processing system cut at the same position as in FIG. 2.

  A substrate processing system as an embodiment of a substrate processing apparatus according to the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a diagram showing a schematic configuration of a substrate processing system. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out unit 2, a first transfer unit 3, an interface unit (connection unit) 4, and a processing unit 5. The first transport unit 3, the interface unit 4, and the processing unit 5 are accommodated in a housing that covers the entire substrate processing system 1.

  The carry-in / out unit 2 includes a container mounting unit 20, and a plurality of substrate transfer containers C (hereinafter simply referred to as “containers C”) can be mounted on the container mounting unit 20. The container C is, for example, a carrier of a type called FOUP (Front-Opening Unified Pod). In the container C, a plurality of substrates W (for example, semiconductor wafers) are stored in a horizontal posture at equal intervals in the vertical direction. The outer surface of the container C placed on the container placement unit 20 is exposed to the atmosphere in a clean room where the substrate processing system 1 is installed.

  The front panel 31 (see FIGS. 1 and 2) of the first transport unit 3 is provided with a plurality of doors. Each door is provided with an unlocking mechanism and a lid adsorbing mechanism for a lid (not shown) of the container C, and the lid of the container C placed on the container placing portion 20 can be removed. When the lid of the container C is removed, the internal space of the container C communicates with the internal space of the first transfer unit 3 (first transfer space 33 described later). At this time, since the peripheral edge of the opening of the container C and the front panel 31 of the first transport unit 3 are in close contact with each other, the atmosphere in the clean room does not enter the inside of the container C. When the container C containing the substrate W is carried into the substrate processing system 1, the container C is sealed with a nitrogen gas atmosphere. What is described in this paragraph is well known in the technical field of semiconductor manufacturing equipment and is not shown in the drawings.

  A first substrate transfer device 32 is provided in the first transfer unit 3. The interface unit 4 is provided with two delivery units 4A and 4B. Each delivery unit 4A, 4B can hold a plurality of substrates W in a horizontal posture with a gap in the vertical direction. The first substrate transfer device 32 takes out the substrate W from the container C placed on the container placement unit 20 and having the lid removed, and carries it in one of the two delivery units 4A and 4B. The internal space 33 of the first transport unit 3 is also referred to as a first transport space 33. In the present specification, the “transport space” means a space in which the substrate W is transported by the substrate transport device.

  The processing unit 5 includes an upper part 5A and a lower part 5B. Since the configurations of the upper portion 5A and the lower portion 5B are substantially the same, in this specification, only the upper portion 5A will be described in many cases. A second transport space 50A extending in the front-rear direction (X direction) is formed at the center in the left-right direction (Y direction) of the upper portion 5A. A second substrate transfer device 51A is provided in the second transfer space 50A. A plurality of processing units 60A are provided on the left and right sides of the second transfer space 50A. The second substrate transfer device 51A can transfer a substrate between the upper delivery unit 4A and the plurality of processing units 60A in the upper portion 5A.

  As shown in FIG. 4, the processing unit 60 </ b> A includes a unit casing (chamber) 61 and a processing mechanism 62 disposed in the unit casing 61. In the illustrated embodiment, the processing mechanism 62 includes a spin chuck 63 (substrate holding and rotating mechanism) that holds the substrate W in a horizontal posture and rotates the substrate W around a vertical axis, and a processing fluid (chemical solution, rinse solution, two liquids) on the substrate W. A nozzle 64 for supplying fluid or the like, and a cup body 65 surrounding the substrate W.

  The processing unit 60A has a nitrogen gas supply unit 66 for supplying an atmosphere adjustment gas, in this example, nitrogen gas, to the internal space (processing space) of the unit casing 61, particularly the space above the substrate W. The nitrogen gas supply unit 66 may be configured as a fan filter unit. In this case, a down flow of the atmosphere adjustment gas is formed in the processing space.

  Connected to the cup body 65 are an exhaust path 67 for sucking the atmosphere inside the cup body 65 and a drain path 68 for discharging the processing fluid scattered from the substrate W from the cup body 65. The drainage path 68 is connected to a waste liquid line of a semiconductor manufacturing factory. From the exhaust path 67, a mixed fluid including a gas that fills the internal space of the unit casing 61 and the processing fluid supplied from the nozzle 64 to the substrate W is discharged.

  The processing unit 60 is provided with an air supply port 69 (unit air passage) for supplying air as purge gas (here, clean air that is filtered air in the clean room) to the internal space of the unit casing 61. Yes.

  On the side surface of the unit casing 61 facing the second transfer space 50 </ b> A, an opening 70 through which the arm of the second substrate transfer apparatus 51 holding the substrate W can pass is provided. A shutter 71 is provided in the opening 70. The shutter 71 is opened when the second substrate transport apparatus 51 carries the substrate W into and out of the processing unit 60A. The shutter 71 is closed when the processing of the substrate W is executed in the processing unit 60A, and isolates the internal space of the processing unit 60A from the transport space 50A. The shutter 71 may have a configuration like a gate valve.

  On the side surface of the processing unit 60A opposite to the shutter 71, a maintenance door 72 that is opened when various components of the processing unit 60A are maintained is provided. The maintenance door 72 is provided with a key cylinder 73 and an electromagnetic lock 74. The operator can switch the state of the processing unit 60A between the maintenance mode and the processing mode by inserting the operation key into the key cylinder 73 and rotating it.

  Each processing unit 60A is provided with an oxygen concentration sensor S4 (see FIG. 5) for detecting the oxygen concentration in the internal space of the unit casing 61.

  The processing unit 60B in the lower portion 5B of the processing unit 5 has the same configuration as the processing unit 60A.

  As shown in FIGS. 3 and 4, the upper portion of the upper portion 5A of the processing section 5 is for supplying nitrogen gas as an atmosphere adjusting gas to the nitrogen gas supply section 66 of each processing unit 60A in the upper portion 5A. A nitrogen gas supply duct 76A is provided. An open / close valve 66V is provided between the nitrogen gas supply unit 66 and the nitrogen gas supply duct 76A of each processing unit 60A. In addition, an air supply duct 78A for supplying air as purge gas to an air supply port (air passage) 69 of each processing unit 60A in the upper portion 5A is provided above the upper portion 5A of the processing section 5. ing. An open / close valve 69V is provided between the air supply port 69 and the air supply duct 78A of each processing unit 60A. The upper portion 5A of the processing unit 5 is provided with an exhaust duct 79A into which gas or mixed fluid discharged from the exhaust path 67 of the processing unit 60A flows.

  The lower part 5B of the processing unit 5 is also provided with a nitrogen gas supply duct 76B, an air supply duct 78B, and an exhaust duct 79B in the same form as the upper part 5A.

  The exhaust duct 79A and the exhaust duct 79B extend to the height position of the floor panel of the housing of the processing unit 5.

  A fan filter that forms a downflow (flowing in the Z negative direction) of the atmosphere adjustment gas in the first transfer space 33 in the ceiling panel of the panels surrounding the internal space of the first transfer unit 3, that is, the first transfer space 33. A unit 34 is provided. Of the panels surrounding the first transfer space 33, the floor panel is provided with an exhaust port 35 for discharging the atmosphere adjustment gas from the first transfer space 33. As shown in FIG. 2, a suction fan 35 a for promoting exhaust from the first transfer space 33 may be provided at the exhaust port 35.

  Of the panels surrounding the first transfer space 33, the floor panel includes the surface of the first substrate transfer device 32 and the inside of the first substrate transfer device 32 from the first transfer space 33 in order to discharge dust, particles, and the like. An exhaust port 36 is provided for discharging the taken-in atmosphere adjustment gas. As shown in FIG. 2, a suction fan 36 a for promoting exhaust may be provided at the exhaust port 36.

  As shown in FIG. 1, a maintenance door 37 is provided on the left or right side panel among the panels surrounding the first transfer space 33. By opening the maintenance door 37, an operator can enter the first transfer space 33 and perform work such as maintenance of the first substrate transfer device 32.

  The maintenance door 37 is provided with a key cylinder 38 and an electromagnetic lock 39. The operator can switch the state of the first transfer space 33 and the second transfer spaces 50A and 50B between the maintenance mode and the processing mode by inserting the operation key into the key cylinder 38 and rotating it.

  As shown in FIG. 2, a fan filter unit 41 </ b> A is provided above the transfer unit 4 </ b> A of the interface unit 4. The fan filter unit 41A blows out the atmosphere adjustment gas into the second transfer space 50A in a substantially horizontal direction through an opening formed in the side panel on the interface unit 4 side among the panels surrounding the second transfer space 50A. Thereby, the side flow of the atmosphere adjustment gas flowing in the X positive direction in the second transfer space 50A is formed.

  An exhaust port 53A for discharging the atmosphere adjustment gas from the second transfer space 50A is provided in a side panel opposite to the interface unit 4 among the panels surrounding the second transfer space 50A. A fan 54A for promoting the discharge of the atmosphere adjustment gas from the second transfer space 50A may be provided in the vicinity of the exhaust port 53A. The exhaust port 53A of the upper second transfer space 50A and the exhaust port 53 of the lower second transfer space 50B are connected to one exhaust duct 55.

  As shown in FIGS. 1 and 2, maintenance doors 56A and 56B are provided at the ends of the second transfer spaces 50A and 50B opposite to the interface section 4 respectively. By opening the maintenance door 56A, an operator can enter the second transfer space 50A and perform maintenance of the second substrate transfer device 51A. An electromagnetic lock 57 is provided on the maintenance door 56A. The maintenance door 56B has the same configuration and function as the maintenance door 56A.

  The atmosphere adjustment gas is also taken into the second substrate transfer device 51A from the second transfer space 50A in order to discharge dust, particles, and the like on the surface and inside of the second substrate transfer device 51A. An exhaust duct 58 </ b> A for discharging the atmosphere adjusting gas from the second substrate transfer apparatus 51 </ b> A extends through the inside of the interface unit 4 to below the floor panel of the housing of the substrate processing system 1.

  Regarding the above points, the second substrate transfer device 51B and the second transfer space 50B are the same as the second substrate transfer device 51A and the second transfer space 50A, and have the same exhaust duct 58B. A suction fan 56 for promoting exhaust may be provided at the downstream end of the exhaust ducts 58A and 58B.

  The first transfer space 33 is always in communication with the upper second transfer space 50A via the inner space of the upper transfer unit 4A of the interface unit 4, and the lower transfer unit 4B on the lower side of the interface unit 4 It is always in communication with the lower second transfer space 50B through the space. That is, it can be considered that the first transfer space 33, the second transfer space 50A, and the second transfer space 50B form one continuous transfer space. This continuous transfer space is always isolated from the atmosphere in the clean room in which the substrate processing system 1 is installed during normal operation of the substrate processing system 1. Even when the opening of the front panel 31 of the first transfer unit 3 is opened, the container C is attached to the opening, so that the atmosphere in the clean room enters the transfer space (30, 50A, 50B). There is nothing. The upper second transfer space 50 </ b> A and the lower second transfer space 50 </ b> B are not in direct communication but are in communication via the first transfer space 33.

  During normal operation of the substrate processing system 1, the internal space of each processing unit 60A is isolated from the second transfer space 50A, and the internal space of each processing unit 60B is isolated from the second transfer space 50B (substrate) Except when the shutter 71 is open for loading and unloading). Further, during normal operation of the substrate processing system 1, the internal spaces of the processing units 60 </ b> A and 60 </ b> B are isolated from the atmosphere in the clean room in which the substrate processing system 1 is installed.

  Next, a gas supply / circulation system that supplies the atmosphere adjustment gas to the first transfer space 33, the second transfer spaces 50A and 50B, and the processing unit 60 will be described.

  In this specification, the atmosphere adjustment gas means any gas that can make the atmosphere of the space different from the clean air atmosphere (clean air atmosphere) in the clean room by supplying the atmosphere adjustment gas to the space. ing. The atmosphere adjustment gas is, for example, an inert gas, specifically nitrogen gas. By supplying nitrogen gas to the internal space of the transfer space 30, 50A, 50B or the processing unit 60, the internal space is made an atmosphere having a lower oxygen concentration and lower humidity than clean air in the clean room. Can do. The atmosphere adjustment gas may be an inert gas other than nitrogen gas, dry air having a lower humidity than clean air in a clean room, or carbon dioxide gas.

  As shown in FIG. 5, the gas supply / circulation system of the substrate processing system 1 has a gas supply / discharge mechanism 80. A gas supply line 81 is connected to the downstream end of the internal line 80 </ b> L provided in the gas supply / discharge mechanism 80. The gas supply line 81 branches into first, second and third branch supply lines 811, 812 and 813. The first branch supply conduit 811 is connected to the fan filter unit 34. The second branch supply conduit 812 is connected to the fan filter unit 41A. The third branch supply line 813 is connected to the fan filter unit 41B.

  A first branch exhaust pipe 821 is connected to the exhaust port 35 of the first transfer space 33. A second branch exhaust line 822 is connected to the exhaust port 36 of the first substrate transfer device 32. A third branch exhaust pipe 823 is connected to the exhaust duct 55 connected to the exhaust port 53A of the upper second transfer space 50A and the exhaust port 53B of the lower second transfer space 50B. A fourth branch exhaust pipe 824 is connected to the exhaust ducts 58A and 58B of the second substrate transfer apparatuses 51A and 51B. The first to fourth branch exhaust pipe lines 821 to 824 merge to form the exhaust pipe line 82, and are connected to the upstream end of the internal pipe line 80L in the gas supply / discharge mechanism 80.

  The internal conduit 80L, the gas supply conduit 81, the first to third branch supply conduits 811 to 813, the first to fourth branch exhaust conduits 821 to 824, and the exhaust conduit 82 form a circulation path, and this circulation A circulation system in which the atmosphere adjusting gas circulates is formed by the path and the transfer spaces 33, 50A, 50B.

  Dampers (not shown) may be provided in part of the first, second and third branch supply pipes 811, 812, 813 and the first to fourth branch exhaust pipes 821 to 824. Thereby, the balance of the gas flow volume which flows through each conveyance space 33, 50A, 50B, the balance of the internal pressure of each conveyance space 33, 50A, 50B, etc. can be adjusted. The balance between the gas flow rate and the internal pressure can also be adjusted by adjusting the number of rotations of the fans of the fan filter units 34, 41A, 41B attached to the transfer spaces 33, 50A, 50B. That is, the damper and fan (not shown) function as a pressure adjusting device.

  The pressure in the second transfer space 50A (50B) is preferably slightly higher than the pressure in the processing unit 60A (60B) facing the second transfer space 50A (50B). By doing so, it is possible to prevent the second transport space 50A (50B) from being contaminated by the chemical flowing into the second transport space 50A (50B) from the processing unit 60A (60B).

  The internal supply line 80L of the gas supply / discharge mechanism 80 is connected to a nitrogen gas supply pipe 801a connected to the nitrogen gas supply source 801 (N2) and an air supply pipe (circulation system ventilation path) connected to the clean air supply source 802 (AIR). ) 802a is connected. The nitrogen gas supply source 801 is provided as factory power provided in a semiconductor manufacturing factory. The clean air supply source 802 may be provided as factory power provided in a semiconductor manufacturing factory, or may be a clean air inlet opening in a clean room. On-off valves 801b and 802b are connected to the nitrogen gas supply pipe 801a and the air supply pipe 802a, respectively.

  The gas supply / discharge mechanism 80 has a blower 803 interposed in the internal pipe line 80L, and the gas that has flowed into the blower 803 can be sent to the downstream side with increased pressure. An exhaust pipe 804 connected to the factory exhaust system is connected to the internal pipe line 80L of the gas supply / discharge mechanism 80. The exhaust pipe 804 is provided with a damper 804a.

  The internal pipe 80L, the gas supply pipe 81, the exhaust pipe 82 (including the branch pipe branched from the pipes 81, 82), the gas supply / discharge mechanism 80, and the transfer spaces 33, 50A, 50B described above. Thus, a circulation system in which the atmosphere adjustment gas (or clean air as the purge gas) circulates is configured.

  An atmosphere adjustment gas (or clean air as a purge gas) is supplied to the processing units 60A and 60B by a system independent of the circulation system. A nitrogen gas supply source 801 is connected to the nitrogen gas supply ducts 76A and 76B, a clean air supply source 802 is connected to the air supply ducts 78A and 78B, and nitrogen gas and clean air can be distributed to the processing units 60A and 60B. it can.

  As shown in FIGS. 4 and 5, the atmosphere control gas or clean air is alternatively supplied to the processing units 60A and 60B by the on-off valves 66V and 69V attached to the processing units 60A and 60B. Can do. The exhaust path 67 of each processing unit 60A, 60B is connected to the exhaust ducts 79A, 79B, and the gas in each processing unit 60A, 60B is sent to the factory exhaust system via the exhaust path 67 and the exhaust ducts 79A, 79B. Can be discharged.

  The substrate processing system 1 includes a control device 100. The control device 100 is a computer, for example, and includes a control unit 101 and a storage unit 102. The storage unit 102 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 101 controls the operation of the substrate processing system 1 by reading and executing a program stored in the storage unit 102.

  Note that such a program may be recorded on a computer-readable storage medium and may be installed in the storage unit 102 of the control device 100 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  Below, operation | movement of the substrate processing system 1 is demonstrated.

  In the substrate processing system 1, first, the first substrate transport device 32 takes out the substrate W from the container C placed on the container placement unit 20, and places the substrate W on the delivery unit 4 </ b> A (or 4 </ b> B). The second substrate transfer apparatus 51A (or 51B) carries the substrate W into the processing unit 60A (or 60B), and a predetermined liquid process is performed on the substrate W in the processing unit 60A (or 60B). The processed substrate W is unloaded from the processing unit 60A (or 60B) by the second substrate transfer device 51A (or 51B) and placed on the delivery unit 4A (or 4B). Thereafter, the first substrate transfer device 32 returns the substrate W placed on the delivery unit 4A (or 4B) to the original container C.

  When starting up the substrate processing system 1, the on-off valve 801 b is opened and nitrogen gas is supplied from the nitrogen gas supply source 801 to the gas supply / discharge mechanism 80, and the gas supply / discharge mechanism 80 gasses nitrogen gas by the blower 803. The feed line 81 is sent out. Thus, a down flow of nitrogen gas is formed in the first transfer space 33 by the fan filter unit 34, and a side flow of nitrogen gas is formed in the second transfer spaces 50A and 50B by the fan filter units 41A and 41B. The air that was present in the transfer spaces 33, 50 </ b> A, 50 </ b> B before the supply of the nitrogen gas is expelled by the nitrogen gas, and the gas supply / discharge mechanism via the first to fourth branch exhaust pipes 821-824 and the exhaust pipe 82 80. The air flowing into the gas supply / discharge mechanism 80 is discharged to the factory exhaust system via the exhaust pipe 804. As a result, the air existing in the circulation system including the transfer spaces 33, 50A, 50B, the gas supply pipe 81, the exhaust pipe 82, and the like is replaced with nitrogen gas. In order to efficiently perform this replacement, the nitrogen gas supplied from the nitrogen gas supply source 801 flows back to the exhaust pipe 82 side in the portion 805 (see FIG. 5) of the internal pipe line 80L of the gas supply / discharge mechanism 80. A check valve or an on-off valve for preventing this may be provided (not shown).

  Even after the atmosphere in the circulation system is replaced with nitrogen gas, the blower 803 is continuously driven, and the nitrogen gas flows in the circulation system described above. When nitrogen gas is circulated in this way, the amount of nitrogen gas used can be greatly reduced compared to the case where the nitrogen gas supplied to the transfer spaces 33, 50A, and 50B is made disposable.

  If a large amount of nitrogen gas leaks around the substrate processing system 1, there is a risk of danger to the human body. Therefore, an oxygen concentration sensor is provided around the substrate processing system 1, and the oxygen concentration around the substrate processing system 1 is May be monitored.

  On the other hand, in each of the processing units 60A and 60B, the on-off valve 66V is opened with the on-off valve 69V closed, whereby nitrogen gas is supplied from the nitrogen gas supply source 801 to each of the processing units 60A and 60B. The air in 60A and 60B is replaced with nitrogen gas.

  When the inside of the circulation system and each of the processing units 60A and 60B is replaced with a nitrogen gas atmosphere, the transfer and processing of the substrate W from the container C described above can be performed. Completion of the replacement with the nitrogen gas atmosphere includes the oxygen concentration sensor S1 provided in the first transfer space 33, the oxygen concentration sensor S2 provided in the second transfer space 50A, and the oxygen concentration sensor provided in the second transfer space 50A. This can be confirmed by S3, an oxygen concentration sensor S4 provided in each processing unit 60A, 60B.

  In order to confirm that nitrogen gas is circulated reliably in the circulation system, one of the first to third branch supply pipes 811 to 813 and the first to fourth branch exhaust pipes 821 to 824 is used. At least some of the pressure gauges may be provided.

  When a worker or an operator enters the transfer spaces 33, 50A, and 50B for maintenance, the transfer spaces 33, 50A, and 50B are set so as not to cause harm to the human body by inhaling a low oxygen concentration gas. The oxygen concentration must be an appropriate value.

  When the operator moves the state of the first transfer space 33 and the second transfer spaces 50A and 50B to the maintenance mode by operating the key cylinder 38 with an operation key (not shown), all the substrate transfer apparatuses (first The operations of the first substrate transfer device 32 and the second substrate transfer devices 51A and 51B) are stopped. Further, the on-off valve 801b is closed and the on-off valve 802b is opened, whereby clean air is supplied from the supply source 802 of clean air as purge gas to the internal conduit 80L of the gas supply / discharge mechanism 80, and the exhaust pipe Gas is discharged from 804. Thereby, the nitrogen gas existing in the circulation system is replaced with clean air. When it is detected that the oxygen concentration detected by the oxygen concentration sensors S1 to S3 has reached an oxygen concentration that is safe for the human body, for example, 19.5% or more, an electromagnetic that is a lock mechanism of each maintenance door 37, 56A, 56B. Locks 39 and 57 are released. As a result, the operator can open the maintenance doors 37, 56A, and 56B and enter the transfer spaces 33, 50A, and 50B. The locking / unlocking control of the electromagnetic locks 39 and 57 may be performed by an independent safety device, or may be performed by a safety device function provided in the control unit 100.

  In this case, the processing units 60A and 60B may be maintained in a nitrogen gas atmosphere.

  When it is desired to maintain a part of the plurality of processing units 60A and 60B, for example, one processing unit 60A, the key cylinder 73 provided on the maintenance door 72 of the processing unit 60A is operated, and the state of the processing unit 60A is changed to the maintenance mode. To. Then, the processing unit 60A stops in the state at that time. The on-off valve 66V is closed and the on-off valve 69V is opened, whereby the supply of nitrogen gas into the processing unit 60A is stopped and the supply of clean air is started. When it is detected by the oxygen concentration sensor S4 that the oxygen concentration in the processing unit 60A is safe for the human body, the electromagnetic lock 74 of the processing unit 60A is released and the maintenance door 72 can be opened. It becomes like this. The locking / unlocking control of the electromagnetic lock 74 may be performed by an independent safety device, or may be performed by a safety device function provided in the control unit 100.

  The operation of opening the maintenance door 72 of only a part of the plurality of processing units 60A, 60B can be performed while the transfer of the substrate W in the transfer spaces 33, 50A, 50B is continued.

  According to the above embodiment, by reusing the nitrogen gas supplied to the transfer spaces 33, 50A, and 50B for adjusting the atmosphere, the consumption of the nitrogen gas is reduced and the maintenance cost of the substrate processing system is reduced. Can do.

  Moreover, according to the said embodiment, since it has performed based on the oxygen concentration which detected the permission of opening and closing of a maintenance door, a worker's safety can be ensured.

  In the above embodiment, the atmosphere adjustment gas is supplied to the first transfer space 33, the upper second transfer space 50A, and the lower second transfer space 50B via the fan filter units 34, 41A, 41B. However, the present invention is not limited to this. For example, if the gas supply / discharge mechanism 80 has a driving force (air volume, wind pressure) sufficient to form a flow of the atmosphere adjustment gas required in the transfer spaces 33, 50A, 50B, the fan filter unit Instead of 34, 41A and 41B, a filter unit having no fan may be used.

  In the above embodiment (hereinafter, also referred to as “first embodiment” for distinction), all the transfer spaces (33, 50A, 50B) provided in the substrate processing system 1 and these transfer spaces are connected. Although the pipe lines (81, 82, 80L, 811, 812, 821, 822, 823, and 824) form a single circulation system, the present invention is not limited to this. For example, as in the second embodiment shown in FIG. 6, the first transport space 33 and the pipe lines 81N, 82N, 811 connected to the first transport space 33 are configured from the single circulation system. The circulatory system (hereinafter referred to as “first circulatory system”) may be separated. In this case, a gas supply / discharge mechanism 80N dedicated to the first circulation system is provided. The configuration of the gas supply / discharge mechanism 80N may be the same as the configuration of the gas supply / discharge mechanism 80 shown on the right side of FIG. In this case, the substrate processing is performed from the second transfer spaces 50A, 50B, the pipe lines (81, 82, 80L, 812, 823, 824) connected to the second transfer spaces 50A, 50B, and the gas supply / discharge mechanism 80. The second circulation system of the system 1 is configured. In the second embodiment shown in FIG. 6, the same components as those provided in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

The second embodiment shown in FIG. 6 has the following advantages. By dividing the circulation system of the substrate processing system 1 into a first circulation system and a second circulation system to reduce the gas flow rate per circulation system, the maximum cross-sectional area of the gas flow path (duct, pipe, etc.) is increased. Can be small. Thereby, an increase in the overall size of the substrate processing system 1 can be prevented or suppressed. When a single circulation system as shown in FIG. 5 is used, in order to reduce the pressure loss while maintaining a sufficiently high gas circulation flow rate per unit (unit: m ³ / min, for example), for example, gas The cross-sectional area of the supply pipe 81 needs to be considerably increased.

  Further, when the shutter 71 of the processing unit 60A (60B) is opened, the second transport space 50A (50B) communicates with the internal space of the processing unit 60A (60B). For this reason, the atmosphere (for example, chemical atmosphere) inside the processing unit 60A (60B) may flow out into the second transfer space 50A (50B) and contaminate the second transfer space 50A (50B). When there is a request to suppress the chemical concentration in the atmosphere of the second transfer space 50A (50B) to a predetermined threshold value or less, a discharge amount of the existing atmosphere through the exhaust pipe 804 and a new amount from the nitrogen gas supply source 801 are added. The supply amount of the atmosphere adjustment gas must be increased. On the other hand, the first transport space 33 is unlikely to be contaminated by a substance entering from the outside. For this reason, the discharge amount of gas from the first circulation system and the supply amount of new nitrogen gas to the first circulation system can be kept low. That is, depending on the requirements, the supply amount of nitrogen gas can be kept low as compared with the case where the substrate processing system 1 has a single circulation system. Also, depending on the requirements, the power consumption of the fans and blowers (34, 35a, 36a, 54A, 54B, 56) may be reduced as compared with the case where the substrate processing system 1 has a single circulation system. It becomes possible.

  Further, by adjusting the atmosphere of the first transfer space 33 and the second transfer spaces 50A and 50B using separate circulation systems (first circulation system and second circulation system), both the conveyance spaces are adjusted to separate atmospheres. can do. For example, it is possible to flexibly respond to a request for making only the second transport spaces 50A and 50B particularly low oxygen concentration.

  About other embodiment (3rd Embodiment) which adjusts atmosphere using a separate circulation system (a 1st circulation system, a 2nd circulation system) similarly to 2nd Embodiment using 1st conveyance space and 2nd conveyance space This will be described with reference to FIG. In the third embodiment shown in FIG. 7, the same components as those provided in the first and second embodiments are denoted by the same reference numerals, and redundant description is omitted.

  In 3rd Embodiment, the conveyance space divided | segmented into two space (2nd conveyance space 50A, 50B) divided up and down in 1st and 2nd embodiment is single space 50C (2nd conveyance). Space 50C). The second transfer space 50C faces all the processing units 16. In the second transfer space 50C, a single second substrate transfer device 51C capable of transferring the substrate W to and from all the processing units 16 is provided. In 3rd Embodiment, the structure of the 1st conveyance space 33 and the 1st board | substrate conveyance apparatus 32 in it may be the same as 1st and 2nd embodiment demonstrated previously. In the third embodiment, one delivery unit 4C is provided between the first transfer space 33 and the second transfer space 50C. Between the 1st conveyance space 33 and the 2nd conveyance space 50C, the delivery unit only for a non-processed substrate and the delivery unit only for a processed substrate may be provided.

  The first circulatory system of the third embodiment shown in FIG. 7 differs from the first circulatory system of the second embodiment shown in FIG. 6 in the following points. A branch path 811B branches from a circulation line (pipe lines 81N, 811, 821, 82N) starting from the gas supply / discharge mechanism 80N and returning to the gas supply / discharge mechanism 80, and returns to the circulation line again. A delivery unit 4C is interposed in the branch path 811B. A fan filter unit 34B1 is provided on the ceiling of the delivery unit 4C. A suction fan 34B2 is provided on the bottom floor of the delivery unit 4C. The fan filter unit 34B1 blows downward into the internal space of the delivery unit 4C after filtering the atmosphere adjustment gas flowing in from the branch path 811B. The suction fan 34B2 sucks the atmosphere in the internal space of the delivery unit 4C and sends it out to the branch path 811B. That is, the gas flowing through the branch path 811B is driven by the fan filter unit 34B1 and the suction fan 34B2.

  The second circulatory system of the third embodiment shown in FIG. 7 differs from the second circulatory system of the second embodiment shown in FIG. 6 in the following points. Not the side flow but the down flow is formed in the second transfer space 50C. In other words, the fan filter unit 41C is provided on the ceiling of the portion (consisting of a plurality of panels) that partitions the second transfer space 50C in the housing of the substrate processing system 1, and the suction fan 54C is provided on the bottom floor. Is provided. The fan filter unit 41C filters the atmosphere adjustment gas flowing in from the circulation line (pipe 812) of the second circulation system, and then blows it downward into the second transfer space 50C. The suction fan 54C sucks the atmosphere of the second transfer space 50C and sends it out to the circulation line (pipe 823) of the second circulation system. That is, the gas flowing through the pipe lines (81, 812, 823, 82, etc.) constituting the second circulation system is driven by the fan filter unit 41C and the suction fan 54C.

  According to said 3rd Embodiment, the substantially the same advantage as 2nd Embodiment is acquired.

  The internal pressure of each of the internal spaces of the first transfer space 33, the second transfer space 50C, and the delivery unit 4C varies depending on the force for pushing the gas into each space (for example, the rotation speed of the fan filter units 34, 34B1, and 41C). ) And the force for sucking the gas from each space (for example, it varies depending on the number of rotations of the suction fans 35a, 34B2, and 54C). It is preferable to set the pressure in the internal space of the delivery unit 4C to be higher than the pressure in the first transfer space 33 and higher than the pressure in the second transfer space 50C. The delivery unit 4C is a place where the substrate W is most likely to stay for the longest time from when it is taken out from the container C until it is returned to the container C. By making the pressure in the second transfer space 50C the highest, the possibility that floating substances such as dust adhere to the substrate W placed on the delivery unit 4C can be greatly reduced.

  In all of the first to third embodiments, if a fan filter unit, a suction fan, etc. can generate a driving force of gas sufficient to form a circulation flow in the circulation system, the gas supply / discharge is performed. The blower 803 in the mechanism 80 may be omitted.

  In all the embodiments disclosed in this specification, the internal spaces of the first transfer space (33), the second transfer space (50A, 50B, 50C) and the delivery unit (4A, 4B, 4C) connected to each other are provided. It can be regarded as one conveyance space. In this case, the first transfer space is the first transfer area (33) of the transfer space, the second transfer space is the second transfer area (50A, 50B, 50C) of the transfer space, and the delivery unit (4A). , 4B, 4C) can be regarded as a communication area in the transfer space, that is, an area for connecting the first transfer area (33) and the second transfer area (50A, 50B, 50C). . Of the circulation paths provided in the substrate processing system 1, a portion connected to the first transfer area (33) and forming a circulation path itself is defined as a first circulation path portion and a second transfer area (50 A, 50 B, 50C) A part that is connected and forms a circuit itself can be regarded as a second circuit part.

  The atmosphere adjustment gas may be an inert gas other than nitrogen gas, dry air having a lower humidity than clean air in a clean room, or carbon dioxide gas.

  The gas supply / discharge mechanism 80 may be provided inside the housing of the substrate processing system 1 or may be installed outside.

  In the above embodiment, the processing unit 60 is a liquid processing unit including the nozzle 64 and the cup body 65. However, the processing unit 60 is not limited to this, and the processing unit 60 performs, for example, a substrate drying process using a supercritical fluid. It may be a drying processing unit to perform, or a surface processing unit to perform surface modification processing.

  The substrate W processed in the substrate processing system 1 is not limited to a semiconductor wafer, and may be various types of substrates for manufacturing a semiconductor device, such as a glass substrate and a ceramic substrate.

  It should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The above-described embodiments may be omitted, replaced, and modified in various forms without departing from the scope and spirit of the appended claims.

W substrate C substrate transport container 2 container carry-in / out section 60A, 60B processing unit 33, 50A, 50B, 4A, 4B, 4C transport space 33 first transport area 50A, 50B, 50C second transport area 4A, 4B, 4C contact area ( Delivery unit)
32, 51A, 51B Substrate transport mechanism (substrate transport device)
32 1st board | substrate conveyance apparatus 51A, 51B, 51C 2nd board | substrate conveyance apparatus 76A, 76B, 66 1st gas supply path 67, 79A, 79B 1st gas discharge path (exhaust path)
81, 82, 80L, 811-813, 821-824 Circulation path 801a Second gas supply path 804 Second gas discharge path 37, 56A, 56B, 72 Maintenance door 802a Circulation system ventilation path 69 Unit ventilation path 39, 57, 74 , Lock mechanism S1-S4 Oxygen concentration sensor 100 Control unit (safety device)

Claims (14)

A container carry-in / out section on which a substrate transport container containing a substrate is placed;
A processing unit for processing the substrate;
A transport space in which a substrate is transported between the container carry-in / out section and the processing unit;
In the transfer space, a substrate transfer mechanism for transferring the substrate between the container carry-in / out unit and the processing unit;
A first gas supply path for supplying an atmosphere adjustment gas to the processing unit;
A first gas discharge path for discharging the atmosphere adjustment gas from the processing unit;
A circulation path connected to the transfer space and returning the atmosphere adjusting gas flowing out of the transfer space to the transfer space;
A second gas supply path for supplying the atmosphere adjusting gas to a circulation system constituted by the transfer space and the circulation path;
A second gas discharge path for discharging the atmosphere adjustment gas from the circulation system;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 1, further comprising a pressure adjusting device that is provided in the circulation system and adjusts a pressure in the transfer space.   The substrate processing apparatus according to claim 2, wherein the pressure adjusting device operates so that a pressure in the transfer space is maintained higher than a pressure in the processing unit.   The substrate processing apparatus according to claim 2, wherein the pressure adjusting device includes a fan or a damper.   The substrate processing apparatus according to claim 1, wherein the atmosphere adjustment gas is a gas having a lower oxygen concentration than air.   The substrate processing apparatus according to claim 5, further comprising a unit ventilation path that introduces air into the processing unit in order to replace the atmosphere in the space inside the processing unit with the air atmosphere from the atmosphere adjusting gas.   The substrate processing apparatus according to claim 6, wherein the processing unit has a maintenance door, and the space inside the processing unit is opened to an atmosphere around the substrate processing apparatus by opening the maintenance door. An oxygen concentration sensor for detecting the oxygen concentration in the space inside the processing unit;
A lock mechanism attached to the maintenance door;
A safety device that permits unlocking of the lock mechanism when the oxygen concentration detected by the oxygen concentration sensor is higher than a predetermined threshold;
The substrate processing apparatus according to claim 7, further comprising:   The substrate processing apparatus according to claim 5, further comprising a circulation system air passage for introducing air into the circulation system in order to replace the atmosphere of the circulation system with the air atmosphere from the atmosphere adjustment gas.   The substrate processing according to claim 9, further comprising a maintenance door for accessing the transfer space, wherein opening the maintenance door opens the space inside the transfer space to an atmosphere around the substrate processing apparatus. apparatus. An oxygen concentration sensor for detecting the oxygen concentration in the space inside the transfer space;
A lock mechanism attached to the maintenance door;
A safety device that permits unlocking of the lock mechanism only when the oxygen concentration detected by the oxygen concentration sensor is higher than a predetermined threshold;
The substrate processing apparatus according to claim 10, further comprising: The transport space has a first transport area, a second transport area, and a communication area that connects the first transport area and the second transport area.
The substrate transfer mechanism includes a first substrate transfer device provided in the first transfer area, and a second substrate transfer device provided in the second transfer area,
In the communication area, the substrate can be transferred between the first substrate transfer device and the second substrate transfer device,
The circulation path is connected to the first transfer area, and is connected to the first transfer path portion that returns the atmosphere adjusting gas that has flowed out of the first transfer area to the first transfer area, and the second transfer area. The substrate processing apparatus according to claim 1, further comprising: a second circulation path portion that returns the atmosphere adjustment gas that has flowed out of the second transfer area to the second transfer area.   In the communication area, a transfer unit capable of temporarily holding a substrate is provided, and the first substrate transfer device can transfer a substrate to and from the transfer unit, and the second substrate transfer device The substrate processing apparatus according to claim 12, wherein the substrate can be transferred to and from the transfer unit.   The pressure adjusting device is provided in the circulation system and adjusts the pressure in the transfer space. 14. The substrate processing apparatus according to claim 13, wherein the substrate processing apparatus operates so as to be higher than the pressure in the second transfer area.