TW201932642A - Substrate-liquid treatment device, substrate-liquid treatment method, and recording medium - Google Patents

Abstract

To provide: a substrate-liquid treatment device which can determine whether or not a liquid treatment using a heated treatment liquid has been successful, for each substrate; a substrate-liquid treatment method; and a recording medium. This substrate-liquid treatment device is provided with a substrate-holding part 52 for holding a substrate W, a treatment liquid-supplying part 53 for supplying a treatment liquid L1 to a treatment surface Sw of the substrate W held by the substrate-holding part 52, a temperature detection sensor 40 for detecting the temperature of the treatment liquid L1 on the treatment surface Sw, and a control unit connected to the temperature detection sensor 40. The control unit obtains the temperature detected by the temperature detection sensor 40 at least in a period after the end of a liquid treatment, between the period after the end of a liquid treatment and the period before the start of the liquid treatment but after formation of a puddle of the treatment liquid L1 on the treatment surface Sw.

Description

Substrate liquid processing device, substrate liquid processing method, and recording medium

The present invention relates to a substrate liquid processing apparatus, a substrate liquid processing method, and a recording medium.

In general, it is known to use a cleaning liquid for cleaning a substrate (wafer) or a substrate liquid for treating a substrate such as a plating solution for plating a substrate. The processing device (for example, refer to Patent Documents 1 to 3). In such a substrate liquid processing apparatus, there is a case where a heated processing liquid is used.

In order to properly perform such liquid treatment, the treatment liquid on the substrate must have a desired temperature suitable for liquid treatment. Further, in order to uniformly perform such liquid treatment on the treated surface of the entire substrate, it is necessary to uniformly supply the treatment liquid to the entire treated surface. However, for various reasons, there is a case where the treatment liquid on the substrate does not necessarily have a desired temperature, and there is a case where the treatment liquid is not appropriately supplied to the entire treatment surface. In these cases, the liquid processing of the substrate is not performed properly, and the substrate becomes a defective product, which causes a problem even in the subsequent stage of processing using such a substrate.
[Previous Technical Literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 9-17761
[Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-107747
[Patent Document 3] Japanese Patent Laid-Open Publication No. 2012-136783

[Problems to be solved by the invention]

The present invention has been made in view of such a problem, and an object thereof is to provide a substrate liquid processing apparatus, a substrate liquid processing method, and a recording medium which can determine whether or not the liquid processing using the heated processing liquid is determined for each substrate.

[Means to solve the problem]

An aspect of the present invention relates to a substrate liquid processing apparatus that performs liquid processing of a processing surface of a substrate by a processing liquid, the substrate liquid processing apparatus comprising: a substrate holding portion that holds the substrate; and a processing liquid a supply unit that supplies a processing liquid to a processing surface of the substrate held by the substrate holding portion, a temperature detecting sensor that detects a temperature of the processing liquid on the processing surface, and a control unit that is connected to the temperature The sensor is detected, and the control unit is obtained after the liquid pool (Puddle) on which the treatment liquid is formed on the treatment surface and before the liquid treatment is started, and after the liquid treatment is completed, at least after the liquid treatment is completed, the temperature detection feeling is obtained. The temperature at which the detector is detected.

Another aspect of the present invention relates to a substrate liquid processing method for performing liquid processing of a processed surface of a substrate by a processing liquid, the substrate liquid processing method characterized by comprising: a substrate held by a substrate holding portion a process in which a treatment liquid is supplied to a treatment liquid to form a liquid pool of a treatment liquid on a treatment surface; and a liquid treatment in a state in which a liquid pool of a treatment liquid is formed on the treatment surface is formed on the treatment surface. After the liquid pool of the treatment liquid and before the liquid treatment is started, at least after the liquid treatment is completed, the temperature of the treatment liquid on the treatment surface detected by the temperature detection sensor is obtained.

Another aspect of the present invention relates to a recording medium having a program recorded thereon, and the program is controlled by a computer for controlling the operation of the substrate liquid processing apparatus, and the substrate is controlled by the computer to make the substrate The liquid treatment method is carried out.

[Effect of the invention]

According to the present invention, it is possible to determine the quality of the liquid treatment using the heated treatment liquid for each substrate.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

First, the configuration of a substrate liquid processing apparatus according to an embodiment of the present invention will be described with reference to Fig. 1 . Fig. 1 is a schematic view showing a configuration of a plating processing apparatus as an example of a substrate liquid processing apparatus according to an embodiment of the present invention. Here, the plating treatment apparatus is a device that supplies the plating liquid L1 (processing liquid) to the substrate W and performs plating treatment (liquid processing) on the substrate W.

As shown in FIG. 1, the plating processing apparatus 1 according to the embodiment of the present invention includes a plating processing unit 2 and a control unit 3 that controls the operation of the plating processing unit 2.

The plating processing unit 2 performs various processes on the substrate W (wafer). Various processes performed on the plating processing unit 2 will be described later.

The control unit 3 is, for example, a computer, and has an operation control unit and a storage unit. The operation control unit is configured by, for example, a CPU (Central Processing Unit), and controls the operation of the plating processing unit 2 by reading and executing a program stored in the memory unit. The memory unit is constituted by a memory device such as a RAM (Random Access Memory), a ROM (Read Only Memory), or a hard disk, and stores a program for controlling various processes performed by the plating processing unit 2. Further, even if the program is recorded on the recording medium 31 that can be read by a computer, the program may be attached to the storage unit from the recording medium 31. Examples of the recording medium 31 readable by a computer include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like. In the recording medium 31, for example, when a computer for controlling the operation of the plating processing apparatus 1 is executed, the computer controls the plating processing apparatus 1 to execute a program to be described later.

The configuration of the plating processing unit 2 will be described with reference to Fig. 1 . FIG. 1 is a schematic cross-sectional view showing a configuration of a plating treatment unit 2.

The plating processing unit 2 includes a loading/unloading station 21 and a processing station 22 provided adjacent to the loading/unloading station 21.

The loading/unloading station 21 includes a placing unit 211 and a conveying unit 212 that is disposed adjacent to the placing unit 211.

In the mounting unit 211, a plurality of transport containers (hereinafter referred to as carriers C) that accommodate a plurality of substrates W in a horizontal state are placed.

The transport unit 212 includes a transport mechanism 213 and a receiving unit 214. The transport mechanism 213 includes a holding mechanism that holds the substrate W, and is configured to be rotatable in the horizontal direction and the vertical direction and centered on the vertical axis.

The processing station 22 includes a plating treatment unit 5. In the present embodiment, the number of the plating treatment portions 5 included in the processing station 22 is two or more, but it may be one. The plating treatment unit 5 is arranged on both sides of the conveyance path 221 extending in a specific direction (both sides in a direction orthogonal to the movement direction of the conveyance mechanism 222 to be described later).

A transport mechanism 222 is provided in the transport path 221 . The transport mechanism 222 includes a holding mechanism that holds the substrate W, and is configured to be rotatable in the horizontal direction and the vertical direction and centered on the vertical axis.

In the plating processing unit 2, the transport mechanism 213 of the loading/unloading station 21 transports the substrate W between the carrier C and the receiving unit 214. Specifically, the transport mechanism 213 takes out the substrate W from the carrier C placed on the mounting portion 211 , and mounts the taken-out substrate W on the receiving portion 214 . Further, the transport mechanism 213 takes out the substrate W placed on the receiving unit 214 by the transport mechanism 222 of the processing station 22, and stores the carrier W on the mounting unit 211.

In the plating processing unit 2, the transport mechanism 222 of the processing station 22 transports the substrate W between the receiving unit 214 and the plating processing unit 5, and between the plating processing unit 5 and the receiving unit 214. Specifically, the transport mechanism 222 takes out the substrate W placed on the receiving unit 214 and carries the taken-out substrate W into the plating processing unit 5 . Further, the transport mechanism 222 takes out the substrate W from the plating processing unit 5, and mounts the taken-out substrate W on the receiving unit 214.

Next, the configuration of the plating treatment unit 5 will be described with reference to Fig. 2 . FIG. 2 is a schematic cross-sectional view showing a configuration of the plating treatment unit 5.

The plating treatment unit 5 performs liquid treatment including electroless plating treatment. The plating treatment unit 5 includes a chamber 51, a substrate holding portion 52 disposed in the chamber 51, and holding the substrate W horizontally, and a plated surface (processing surface Sw) held by the substrate holding portion 52. The plating solution supply unit 53 (processing liquid supply unit) of the liquid L1 (treatment liquid). In the present embodiment, the substrate holding portion 52 has a disk member 521 that vacuum-adsorbs the lower surface (back surface) of the substrate W. The substrate holding portion 52 is a vacuum disk type, but the substrate holding portion 52 is not limited thereto, and may be a mechanical disk type that grips the outer edge portion of the substrate W by, for example, a disk mechanism.

The rotation holding motor 523 (rotation driving unit) is coupled to the substrate holding portion 52 via a rotating shaft 522. When the rotation motor 523 is driven, the substrate holding portion 52 rotates together with the substrate W. The rotary motor 523 is supported by a base 524 that is fixed to the chamber 51.

The plating liquid supply unit 53 has a plating liquid nozzle 531 (processing liquid nozzle) that discharges (supplied) the plating liquid L1 to the substrate W held by the substrate holding unit 52, and supplies the plating liquid L1 to the plating liquid nozzle 531. The plating solution is supplied to the source 532. The plating solution supply source 532 supplies the plating solution nozzle 531 with the plating solution L1 heated or tempered to a specific temperature. The temperature of the plating solution L1 when discharged from the plating solution nozzle 531 is a temperature higher than the ambient temperature around the substrate W, for example, 55 ° C or more and 75 ° C or less, more preferably 60 ° C or more and 70 ° C or less. The plating liquid nozzle 531 is held by the nozzle arm 56 and configured to be movable.

The plating solution L1 is a plating solution for electroless plating of a self-catalytic type (reduced type). The plating solution L1 contains, for example, cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, metal ions such as gold (Au), hypophosphorous acid, and dimethyl A reducing agent such as a guanamine borane. The plating solution L1 may contain an additive or the like. Examples of the plating film (metal film) produced by the plating treatment using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, and the like.

The plating treatment unit 5 according to the present embodiment further includes a cleaning liquid supply unit 54 that supplies the cleaning liquid L2 to the upper surface of the substrate W held by the substrate holding unit 52, and supplies the rinsing to the upper surface of the substrate W. The rinse liquid supply unit 55 of the liquid L3 serves as another processing liquid supply unit.

The cleaning liquid supply unit 54 has a cleaning liquid nozzle 541 that discharges the cleaning liquid L2 to the substrate W held by the substrate holding unit 52, and a cleaning liquid supply source 542 that supplies the cleaning liquid L2 to the cleaning liquid nozzle 541. As the cleaning liquid L2, for example, an organic acid such as formic acid, malic acid, succinic acid, citric acid or malonic acid, or hydrofluoric acid diluted to a concentration that does not corrode the plated surface of the substrate W can be used. (DHF) (aqueous solution of hydrogen fluoride) or the like. The cleaning liquid nozzle 541 is held by the nozzle arm 56 and is movable together with the plating liquid nozzle 531.

The rinse liquid supply unit 55 has a rinse liquid nozzle 551 that discharges the rinse liquid L3 to the substrate W held by the substrate holding unit 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551. These rinse liquid nozzles 551 are held by the nozzle arm 56 and are movable together with the plating liquid nozzle 531 and the cleaning liquid nozzle 541. As the rinse liquid L3, for example, pure water or the like can be used.

A nozzle moving mechanism (not shown) is connected to the nozzle arm 56 that holds the plating liquid nozzle 531, the cleaning liquid nozzle 541, and the rinse liquid nozzle 551. The nozzle moving mechanism moves the nozzle arm 56 in the horizontal direction and the vertical direction. More specifically, the nozzle arm 56 is a discharge position at which the processing liquid (plating liquid L1, the cleaning liquid L2, or the rinse liquid L3) can be discharged to the substrate W, and the retracted position retracted from the discharge position by the nozzle moving mechanism. Move between. The discharge position is not particularly limited as long as it can supply the treatment liquid to any position on the upper surface of the substrate W. For example, it is preferable to set the position at which the processing liquid can be supplied to the center of the substrate W as the discharge position. When the plating liquid L1 is supplied to the substrate W, the cleaning liquid L2 is supplied, and the rinse liquid L3 is supplied, and the discharge position of the nozzle arm 56 may be different. The position of the evacuation position in the chamber 51 is a position that does not overlap with the substrate W when viewed from above, that is, a position away from the discharge position. In the event that the nozzle arm 56 is positioned in the retracted position, the moving cover 6 is prevented from interfering with the nozzle arm 56.

The cup 571 is disposed around the substrate holding portion 52. The cup body 571 is formed in a ring shape when viewed from above, and receives the processing liquid scattered from the substrate W when the substrate W is rotated, and is guided to a drain pipe 581 which will be described later. An environmental shielding cover 572 is provided on the outer peripheral side of the cup body 571 to prevent the environment around the substrate W from diffusing into the chamber 51. The environmental shielding cover 572 is formed in a cylindrical shape so as to extend in the vertical direction, and the upper end is open. The lid body 6 to be described later can be inserted into the environmental shielding cover 572 from above.

The substrate W held by the substrate holding portion 52 is covered by the lid body 6. The lid body 6 has a ceiling portion 61 and a side wall portion 62 that extends downward from the ceiling portion 61. The ceiling portion 61 is disposed above the substrate W held by the substrate holding portion 52 when the lid body 6 is positioned below the substrate, and faces the substrate W at a relatively small interval.

The ceiling portion 61 includes a first top plate 611 and a second top plate 612 provided on the first top plate 611. A heater 63 (heating portion) is interposed between the first top plate 611 and the second top plate 612. The first top plate 611 and the second top plate 612 constitute a sealing heater 63, and the heater 63 is not in contact with the processing liquid such as the plating solution L1. More specifically, a seal ring 613 is provided between the first top plate 611 and the second top plate 612 and on the outer peripheral side of the heater 63, and the heater 63 is sealed by the seal ring 613. The first top plate 611 and the second top plate 612 are preferably corrosion-resistant with respect to the treatment liquid such as the plating solution L1, and may be formed, for example, by an aluminum alloy. In order to improve the corrosion resistance, the first top plate 611, the second top plate 612, and the side wall portion 62 may be coated with Teflon (registered trademark).

The lid moving mechanism 7 is coupled to the lid body 6 via the lid arm 71. The lid moving mechanism 7 moves the lid body 6 in the horizontal direction and the vertical direction. More specifically, the lid moving mechanism 7 has a rotary motor 72 that moves the lid body 6 in the horizontal direction, and an air cylinder 73 (interval adjustment portion) that moves the lid body 6 in the vertical direction. Among them, the rotary motor 72 is attached to the support plate 74, and the support plate 74 is provided to be movable in the vertical direction with respect to the air cylinder 73. Instead of the cylinder 73, an actuator (not shown) including a motor and a ball screw may be used.

The rotation motor 72 of the lid moving mechanism 7 moves the lid body 6 between the upper position above the substrate W held by the substrate holding portion 52 and the retracted position at which the upper position is retracted. The upper position is a position that is opposed to the substrate W held by the substrate holding portion 52 at a relatively large interval, that is, a position overlapping the substrate W when viewed from above. The retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above. In the case where the cover 6 is positioned at the retracted position, the moving nozzle arm 56 is prevented from interfering with the cover 6. The rotation axis of the rotary motor 72 extends in the vertical direction, and the lid body 6 is rotatably moved in the horizontal direction between the upper position and the retracted position.

The cylinder 73 of the lid moving mechanism 7 moves the lid body 6 in the vertical direction, and adjusts the interval between the substrate W containing the plating liquid L1 and the first top plate 611 of the ceiling portion 61 on the processing surface Sw. More specifically, the cylinder 73 positions the lid body 6 at a lower position (a position indicated by a solid line in Fig. 2) and an upper position (a position indicated by a two-dot chain line in Fig. 2).

When the lid body 6 is placed at the lower position, the first top plate 611 is close to the substrate W. In this case, in order to prevent the plating solution L1 from being stained or generating bubbles in the plating solution L1, it is preferable to set the lower position so that the first top plate 611 does not contact the plating liquid L1 on the substrate W.

The upper position is a height position at which the cover 6 can be prevented from interfering with the structure around the cup 571 or the environmental shielding cover 572 or the like when the lid body 6 is rotationally moved in the horizontal direction.

In the present embodiment, when the heater 63 is driven and the lid 6 is positioned at the lower position, the plating liquid L1 on the substrate W is heated.

The side wall portion 62 of the lid body 6 extends downward from the peripheral edge portion of the first top plate 611 of the ceiling portion 61, and when the plating liquid L1 on the substrate W is heated (that is, the lid body 6 is positioned at the lower position) ) is disposed on the outer peripheral side of the substrate W. In the case where the lid body 6 is positioned at the lower position, the lower end of the side wall portion 62 may be positioned lower than the substrate W.

A heater 63 is provided in the ceiling portion 61 of the lid body 6. When the heater 63 is positioned at the lower position, the heater 63 heats the processing liquid on the substrate W (preferably, the plating liquid L1). In the present embodiment, the heater 63 is interposed between the first top plate 611 and the second top plate 612 of the lid body 6, and is sealed as described above to prevent the heater 63 from coming into contact with the treatment liquid such as the plating solution L1. . The heater 63 is not particularly limited, and for example, a mica heater as a planar heat generating body can be suitably used.

In the present embodiment, an inert gas (for example, nitrogen (N ₂ ) gas) is supplied to the inside of the lid body 6 by the inert gas supply portion 66. The inert gas supply unit 66 has a gas nozzle 661 that discharges an inert gas to the inside of the lid body 6, and an inert gas supply source 662 that supplies an inert gas to the gas nozzle 661. The gas nozzle 661 is provided in the ceiling portion 61 of the lid body 6, and the inert gas is discharged toward the substrate W while the lid body 6 covers the substrate W.

The ceiling portion 61 and the side wall portion 62 of the lid body 6 are covered by the lid cover 64. The cover cover 64 is placed on the second top plate 612 of the lid body 6 via the support portion 65. In other words, the second top plate 612 is provided with a plurality of support portions 65 projecting upward from the upper surface of the second top plate 612, and the cover portion 64 is placed on the support portion 65. The lid cover 64 is movable in the horizontal direction and the vertical direction together with the lid body 6. Further, the cover cover 64 preferably has a higher heat insulating property than the ceiling portion 61 and the side wall portion 62 in order to suppress the heat in the lid body 6 from being released to the surroundings. For example, the cover cover 64 is preferably formed of a resin material, and the resin material preferably has heat resistance.

A fan filter unit 59 (gas supply unit) that supplies clean air (gas) to the periphery of the lid body 6 is provided above the chamber 51. The fan filter unit 59 supplies air to the inside of the chamber 51 (in particular, the inside of the environmental shielding cover 572), and the supplied air flows toward the exhaust pipe 81 which will be described later. Around the cover 6, a downward flow of the downward flow of the air is formed, and the gas vaporized from the treatment liquid of the plating solution L1 or the like flows toward the exhaust pipe 81 by the downward flow. In this way, the gas vaporized from the treatment liquid is prevented from rising and diffusing into the chamber 51.

The gas supplied from the fan filter unit 59 is discharged by the exhaust mechanism 8. The exhaust mechanism 8 has two exhaust pipes 81 disposed below the cup 571, and an exhaust duct 82 disposed below the drain pipe 581. The two exhaust pipes 81 pass through the bottom of the drain pipe 581 and communicate with the exhaust duct 82. The exhaust duct 82 is substantially formed in a semi-annular shape as viewed from above. In the present embodiment, an exhaust duct 82 is provided below the exhaust pipe 581, and two exhaust pipes 81 are connected to the exhaust duct 82.

The plating treatment unit 5 that performs the plating treatment of the processing surface Sw of the substrate W by the plating solution L1 further includes a temperature detecting sensor 40 that detects the temperature of the plating liquid L1 on the processing surface Sw. The temperature detecting sensor 40 is connected to the control unit 3 (see FIG. 1), and transmits the detection result to the control unit 3.

The specific configuration of the temperature detecting sensor 40 is not particularly limited, but a non-contact type sensor is used. For example, an infrared sensor (IR sensor: Infrared Sensor) capable of detecting the temperature of the plating liquid L1 on the processing surface Sw can be suitably used as the temperature detecting sensor 40 even from a position farther away.

The temperature detecting sensor 40 shown in FIG. 2 is mounted in the chamber 51 to the fan filter unit 59, above the processing surface Sw of the substrate W, with respect to the substrate holding portion 52 (ie, relative to borrowing The substrate W) held by the substrate holding portion 52 is fixedly disposed. By arranging the temperature detecting sensor 40 at a position facing the processing surface Sw, the temperature of the plating liquid L1 over the entire processing surface Sw can be detected simply and accurately.

Further, the temperature detecting sensor 40 may be movably provided with respect to the substrate holding portion 52. Even in this case, when the temperature detecting sensor 40 detects the temperature of the plating liquid L1 on the processing surface Sw, it is preferably disposed above the processing surface Sw and facing the processing surface Sw. For example, even if the temperature detecting sensor 40 is attached to the movable arm (not shown), the measurement position between the lid body 6 positioned at the upper position and the substrate W held by the substrate holding portion 52 can be held and held. The substrate W of the substrate holding portion 52 and the standby position where the vertical direction does not overlap may be disposed in the temperature detecting sensor 40. In the case of the fixed temperature detecting sensor 40 (in particular, the infrared sensor) shown in FIG. 2, if not in the cover 6 (ie, the heater 63) from the temperature detecting sensor 40 and the substrate W After the back-off, the temperature detecting sensor 40 cannot detect the temperature of the plating liquid L1 on the processing surface Sw. On the other hand, by allowing the temperature detecting sensor 40 to move, even if the cover body 6 (that is, the heater 63) is disposed at a position (for example, an upper position) overlapping the substrate W above the substrate W, it is possible to borrow The temperature detecting sensor 40 is disposed at a measurement position between the lid body 6 and the substrate W by the temperature detecting sensor 40, and the temperature detecting sensor 40 appropriately detects the temperature of the plating liquid L1 on the processing surface Sw.

The control unit 3 can obtain the temperature of the plating solution L1 on the processing surface Sw based on the detection result sent from the temperature detecting sensor 40. In particular, the control unit 3 of the present embodiment is a sequence of "after the liquid pool of the plating solution L1 is substantially formed on the processing surface Sw and before the actual plating process is started", and "substantial plating treatment" In the sequence of "after completion", at least the timing after the "substantial plating process is completed", the detection result of the temperature detecting sensor 40 is obtained.

The plating treatment of the present embodiment is performed in a state where the plating liquid L1 on the processing surface Sw is heated by the heat emitted from the heater 63 toward the processing surface Sw of the substrate W as described above. Therefore, in the present embodiment, the "substantial plating treatment" is performed by the substrate holding portion 52 in a state in which the liquid pool of the plating liquid L1 is formed on the processing surface Sw. The position where the held substrate W overlaps, the plating liquid L1 on the processing surface Sw is heated by the heat from the heater 63, and the plating liquid L1 on the processing surface Sw by the heat from the heater 63 is started. The heating ends and ends. Therefore, the control unit 3 is in the "before the liquid pool of the plating liquid L1 is substantially formed on the processing surface Sw, and the plating liquid L1 on the processing surface Sw is heated by the heat from the heater 63". And at least "after the completion of the heating of the plating liquid L1 on the processing surface Sw from the heat of the heater 63", at least "the plating liquid on the processing surface Sw from the heat of the heater 63" The timing of the temperature detection sensor 40 is obtained at the timing after the end of the heating of L1. More specifically, the control unit 3 shown in the figure obtains the temperature detection feeling even at the timing of "after the liquid pool of the plating liquid L1 is substantially formed on the processing surface Sw and before the lid body 6 is placed at the lower position". The detection result of the detector 40 is also acceptable. In addition, the control unit 3 shown in the figure obtains the detection result of the temperature detecting sensor 40 even after the timing of the movement of the lid body 6 from the upper position toward the retracted position (for example, after the lid body 6 is placed at the retracted position). can.

The control unit 3 can determine the result of the plating process for each of the substrates W by obtaining the detection result of the temperature detecting sensor 40 as described above.

For example, the control unit 3 can detect the detection result of the temperature sensor in the timing of "after the liquid pool of the plating liquid L1 is substantially formed on the processing surface Sw and before the substantial plating process starts", It is judged whether or not the liquid pool of the plating liquid L1 formed on the processing surface Sw is good. When the liquid pool of the plating solution L1 is well formed on the processing surface Sw, the detection result of the temperature detecting sensor 40 indicates that the temperature is higher than the ambient temperature around the substrate W over the entire processing surface Sw. As described above, in the entire processing surface Sw, the detected temperature is within the range of the allowable error. On the other hand, in the case where the liquid pool of the plating liquid L1 is not formed well on the processing surface Sw, the detection result of the temperature detecting sensor 40 indicates that the detected temperature is lower than the expected temperature in one or all of the processing surface Sw. Furthermore, the detected temperature of the entire processing surface Sw does not fall within the tolerance. Therefore, the detection of the temperature detecting sensor 40 performed immediately after the "the liquid pool of the plating liquid L1 is substantially formed on the processing surface Sw and before the start of the substantial plating process" is followed by the substantial plating treatment. It is better to do it before starting.

In addition, the control unit 3 can determine whether or not the plating process on the processing surface Sw is appropriately performed based on the detection result of the temperature detecting sensor 40 in the sequence after the "substantial plating process is completed". When the plating treatment of the processing surface Sw is appropriately performed, the detection result of the temperature detecting sensor 40 indicates that the temperature is higher than the ambient temperature around the substrate W at or near the processing surface Sw. The temperature (i.e., the imaginary temperature) is further increased, and the temperature is within the tolerance of the entire processing surface Sw. On the other hand, in the case where the plating treatment on the processing surface Sw is not properly performed, the detection result of the temperature detecting sensor 40 indicates that the detected temperature deviates from the fictive temperature throughout the processing surface Sw (typically, the detected temperature is lower than the fictive temperature Lower), further, the detection temperature of the entire processing surface Sw does not fall within the tolerance. Therefore, it is preferable that the detection by the temperature detecting sensor 40 in the sequence of "after the completion of the substantial plating process" is performed immediately after the completion of the substantial plating process.

Further, the control unit 3 may acquire the detection result of the temperature detecting sensor 40 continuously, or may acquire it intermittently. Further, even if the temperature detecting sensor 40 is controlled by the control unit 3, the temperature detecting sensor 40 may continuously perform temperature detection, and may be performed intermittently. Therefore, even when the substantial plating process is performed, the temperature detecting sensor 40 may perform temperature detection, and the control unit 3 may obtain the detection result of the temperature detecting sensor 40. The control unit 3 can determine the detection timing of the temperature detecting sensor 40 based on, for example, the position information of the lid body 6 or the position information of the nozzle arm 56 (that is, the nozzles 531, 541, and 551). Therefore, when the temperature detection by the temperature detecting sensor 40 is continuously performed, the control unit 3 determines that the temperature detecting sensor 40 is based on the position information of the cover 6 or the position information of the nozzle arm 56 or the like. The detection timing of the obtained detection result is also possible.

In this way, the control unit 3 can predict whether the temperature of the plating solution L1 detected by the temperature detecting sensor 40 is higher than the ambient temperature around the substrate W based on the processing surface Sw of the entire substrate W. Above the temperature, determine whether the plating treatment is good or not. Furthermore, the control unit 3 can determine whether or not the plating process is good or not based on whether or not the temperature detected by the temperature detecting sensor 40 is within the allowable error of the entire processing surface Sw.

As a result of the determination of the plating process determined by the control unit 3, it can be used for notification to the user, processing of the substrate W in the subsequent stage, and any other processing. For example, the control unit 3 displays the result of the determination of the plating process (for example, an error message) on the display, or outputs the determination result by a sound (for example, an erroneous sound). In addition, when the determination result indicates that the plating process is defective, the control unit 3 adds the plating liquid L1 of the desired temperature to the processing surface Sw from the plating solution supply unit 53, and re-forms the liquid pool of the plating liquid L1. Alternatively, the plating temperature may be adjusted to adjust the heat generation temperature of the heater 63. Further, the control unit 3 stores the determination result of the plating treatment and the correlation between each substrate W and the memory device, and the related information stored in the memory device may be used in the subsequent processing.

Next, the action of this embodiment configured from such a configuration will be described with reference to FIG. 3. Next, a plating treatment method using the plating treatment apparatus 1 will be described as an example of the substrate liquid processing method.

The plating treatment method performed by the plating treatment apparatus 1 includes a plating treatment on the substrate W. The plating treatment is performed by the plating treatment unit 5. The operation of the plating processing unit 5 shown below is controlled by the control unit 3. In addition, during the following processing, clean air is supplied from the fan filter unit 59 to the inside of the chamber 51, and flows toward the exhaust pipe 81.

First, the substrate W is carried into the plating processing unit 5, and the substrate W is held horizontal by the substrate holding unit 52 (step S1).

Next, the cleaning process of the substrate W held by the substrate holding portion 52 is performed (step S2). In the cleaning process, first, the rotary motor 523 is driven to rotate the substrate W by a specific number of rotations, and then the nozzle arm 56 positioned at the retracted position is moved to the discharge position, and the cleaning liquid L2 is removed from the cleaning liquid nozzle 541. The substrate W is supplied to the substrate, and the surface of the substrate W is washed. Thereby, the adhering matter or the like adhering to the substrate W is removed from the substrate W. The cleaning liquid L2 supplied to the substrate W is discharged to the liquid discharge pipe 581.

Next, the rinsing process of the substrate W is performed (step S3). In this rinsing process, the rinsing liquid L3 is supplied from the rinsing liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is rinsed. Thereby, the cleaning liquid L2 remaining on the substrate W is washed. The rinse liquid L3 supplied to the substrate W is discharged to the drain pipe 581.

Next, a plating liquid holding process for forming a liquid pool of the plating solution L1 on the processing surface Sw of the substrate W is performed (step S4). In this process, first, the number of rotations of the substrate W is lower than the number of rotations during the rinsing process. For example, the number of rotations of the substrate W may be 50 to 150 rpm. Thereby, the plating film formed on the substrate W can be made uniform. Further, even if the rotation of the substrate W is stopped, the amount of the plating solution L1 can be increased. Next, the plating liquid L1 is discharged from the plating liquid nozzle 531 to the upper surface of the substrate W (that is, the processing surface Sw). The plating solution L1 stays on the treatment surface Sw by the surface tension to form a layer of the plating solution L1 (so-called liquid pool). One of the plating liquid L1 flows out of the treatment surface Sw and is discharged through the liquid discharge pipe 581. After the plating liquid L1 of a specific amount is discharged from the plating liquid nozzle 531, the discharge of the plating liquid L1 is stopped. Thereafter, the nozzle arm 56 is positioned in the retracted position.

Next, as a plating liquid heat treatment process, the plating liquid L1 carried on the substrate W is heated. The plating solution heat treatment project has a process in which the lid body 6 covers the substrate W (step S5), and a process of supplying an inert gas (step S6), and a heating process in which the lid body 6 is disposed at a lower position to heat the plating solution L1. (Step S7), and a process of retracting the lid body 6 from the substrate W (step S8). Further, even in the plating liquid heat treatment process, the number of rotations of the substrate W is preferably maintained at the same speed (or rotation stop) as the plating load.

In the process of covering the substrate W with the lid body 6 (step S5), first, the rotation motor 72 of the lid body moving mechanism 7 is driven, and the lid body 6 positioned at the retracted position is rotationally moved in the horizontal direction and positioned at the upper position. Then, the cylinder 73 of the lid moving mechanism 7 is driven, and the lid body 6 positioned at the upper position is lowered to be positioned at the lower position, and the substrate W is covered by the lid body 6, and the space around the substrate W is sealed.

After the substrate W is covered by the lid body 6, the inert gas is discharged from the gas nozzle 661 provided in the top plate portion 61 of the lid body 6 to the inside of the lid body 6 (step S6). Thereby, the air inside the lid body 6 is replaced with an inert gas, and the periphery of the substrate W becomes a low-oxygen environment. The inert gas is discharged at a specific time, and then the discharge of the inert body is stopped.

Next, the plating liquid L1 held on the substrate W is heated (step S7). When the temperature of the plating solution L1 rises to the temperature analyzed in the plating solution L1, the plating liquid L1 is formed on the upper surface of the substrate W to form a plating film and grow. In this heating process, the plating solution L1 is heated and maintained at the deposition temperature for the necessary time required to obtain a plating film having a desired thickness.

When the heating process is completed, the lid moving mechanism 7 is driven, and the lid body 6 is positioned at the retracted position (step S8). As a result, the plating liquid heat treatment process (steps S5 to S8) of the substrate W is completed.

Next, the rinsing process of the substrate W is performed (step S9). In the rinsing process, first, the number of rotations of the substrate W is increased as compared with the number of rotations during the plating process, and for example, the substrate W is rotated by the same number of rotations in the substrate rinsing process (step S3) before the plating process. Next, the rinse liquid nozzle 551 positioned at the retracted position is moved to the discharge position. Next, the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, the surface of the substrate W is washed, and the plating liquid L1 remaining on the substrate W is washed.

Next, the drying process of the substrate W is performed (step S10). In the drying process, the substrate W is rotated at a high speed, and for example, the number of rotations of the substrate W is increased more than the number of rotations of the substrate rinsing process (step S9). Thereby, the rinse liquid L3 remaining on the substrate W is removed and removed, and the substrate W on which the plating film is formed is obtained. In this case, even if an inert gas such as nitrogen (N ₂ ) gas is blown onto the substrate W, the drying of the substrate W may be promoted.

After that, the substrate W is taken out from the substrate holding portion 52 and is carried out from the plating processing portion 5 (step S11).

The plating treatment method is performed through the above-described series of steps S1 to S11, and in particular, the plating liquid L1 is supplied to the processing surface Sw of the substrate W held by the substrate holding portion 52, and plating is formed on the processing surface Sw. The process of the liquid pool of the liquid L1 (step S4) and the plating process by the liquid pool of the plating liquid L1 (step S5 to step S8). In the series of processes, the control unit 3 is "after the liquid pool of the plating solution L1 is substantially formed on the processing surface Sw (that is, after step S4), and before the substantial plating process is started (that is, The timing of the step S5 before (see the symbol "T1" in FIG. 3) and the timing after the "substantial plating process is completed (that is, after the step S8)" (refer to the symbol "T2" in FIG. 3) At least the timing after the "substantial plating process is completed" is obtained, and the detection result of the temperature detecting sensor 40 is obtained. In particular, since the temperature detection by the temperature detecting sensor 40 is performed by using the plating liquid L1 on the processing surface Sw as a detection target, the temperature detecting sensor 40 is performed at the timing after the "substantial plating process is completed". The temperature detection is performed after step S8 ("cover evacuation process") and before step S9 ("substrate rinse process"). Further, as described above, the detection result of the temperature detecting and control unit 3 of the temperature detecting sensor 40 may be continuously performed even while the above-described steps S4 to S9 and other steps are performed.

As described above, in the present embodiment, after the liquid pool of the plating solution L1 is formed on the processing surface Sw and before the plating process is started, and after the plating process is finished, at least after the plating process is finished, The temperature detected by the temperature detecting sensor 40 is obtained, whereby the quality of the plating process can be determined for each substrate W.

In particular, it is possible to perform the determination plating simply and accurately based on whether the temperature detected by the temperature detecting sensor 40 is higher than the expected temperature higher than the ambient temperature around the substrate W over the entire processing surface Sw. Whether it is handled well or not. Similarly, whether or not the plating process is judged can be easily and accurately performed based on whether or not the temperature detected by the temperature detecting sensor 40 is within the allowable error of the entire processing surface Sw.

Further, by providing the temperature detecting sensor 40 in a fixed manner with respect to the substrate holding portion 52, the temperature detecting sensor 40 can be placed in the plating processing portion 5 without complicating the configuration. On the other hand, by arranging the temperature detecting sensor 40 movably with respect to the substrate holding portion 52, the temperature of the plating liquid L1 on the processing surface Sw of the substrate W can be appropriately detected in various device configurations.

Further, by detecting the temperature of the plating liquid L1 on the processing surface Sw, the temperature detecting sensor 40 is disposed above the processing surface Sw, and the entire processing surface Sw can be detected simply and accurately. The temperature of the plating solution L1. In particular, by using an infrared sensor as the temperature detecting sensor 40, the device can be constructed relatively inexpensively and simply.

As described above, the plating treatment unit 5 of the present embodiment determines whether or not the plating treatment is good by detecting the temperature of the plating liquid L1 on the processing surface Sw. Therefore, in the embodiment, the plating liquid L1 supplied from the liquid supply unit 53 to the substrate W has a temperature higher than the ambient temperature around the substrate W, which is particularly effective. In addition, in the case where the plating liquid L1 is heated by the heat from the heater 63, the present embodiment is particularly effective.

In addition, the present invention is not limited to the above-described embodiment and the modification itself, and in the implementation stage, the constituent elements may be modified and embodied without departing from the scope of the invention. Further, various inventions can be formed by appropriate combinations of the plurality of constituent elements disclosed in the above embodiments and modifications. It is also possible to delete several constituent elements from the entire constituent elements shown in the embodiment and the modified example. Further, even if the components of the different embodiments and the modifications are combined as appropriate, they may be combined.

For example, the substrate liquid processing apparatus and the substrate liquid processing method according to the present invention are effective even for the treatment liquid other than the plating liquid L1 and the liquid treatment other than the plating treatment. Furthermore, even if the present invention is embodied, it is used as a recording medium on which a program is recorded (for example, the recording medium 31 of the control unit 3), and the program is used to control the substrate liquid processing apparatus (plating processing apparatus 1) When the computer that operates is operated, the computer controls the substrate liquid processing device to perform the above-described substrate liquid processing method.

1‧‧‧ plating treatment device

3‧‧‧Control Department

31‧‧‧Recording media

40‧‧‧Temperature Detection Sensor

52‧‧‧Substrate retention department

53‧‧‧ plating solution supply department

L1‧‧‧ plating solution

Sw‧‧‧Processing surface

W‧‧‧Substrate

Fig. 1 is a schematic plan view showing a configuration of a plating treatment apparatus.

Fig. 2 is a cross-sectional view showing the configuration of a plating treatment unit shown in Fig. 1;

Fig. 3 is a flow chart showing a plating process of a substrate in the plating processing apparatus of Fig. 1.

Claims (11)

A substrate liquid processing apparatus for performing liquid processing of a processing surface of a substrate by a processing liquid, the substrate liquid processing apparatus comprising: a substrate holding portion that holds the substrate; a processing liquid supply unit that supplies the processing liquid to the processing surface of the substrate held by the substrate holding unit; a temperature detecting sensor for detecting a temperature of the processing liquid on the processing surface; and a control unit connected to the temperature detecting sensor, The control unit is configured to obtain the temperature after the liquid processing (Puddle) in which the processing liquid is formed on the processing surface, before the liquid processing is started, and after the liquid processing is completed, after at least the liquid processing is completed. The above temperature at which the sensor is detected is detected. The substrate liquid processing apparatus according to claim 1, wherein The control unit determines whether the liquid processing is good or not based on whether the temperature detected by the temperature detecting sensor indicates a temperature higher than an expected temperature higher than an ambient temperature around the substrate over the entire processing surface. The substrate liquid processing apparatus according to claim 1 or 2, wherein The control unit determines whether the liquid processing is good or not based on whether or not the temperature detected by the temperature detecting sensor is within a tolerance range of the entire processing surface. The substrate liquid processing apparatus according to claim 1 or 2, wherein The temperature detecting sensor is fixedly disposed with respect to the substrate holding portion. The substrate liquid processing apparatus according to claim 1 or 2, wherein The temperature detecting sensor is movably disposed with respect to the substrate holding portion. The substrate liquid processing apparatus according to claim 1 or 2, wherein The temperature detecting sensor is located above the processing surface when detecting the temperature. The substrate liquid processing apparatus according to claim 1 or 2, wherein The above temperature detecting sensor is an infrared sensor. The substrate liquid processing apparatus according to claim 1 or 2, wherein The processing liquid supply unit supplies the processing liquid having a temperature higher than an ambient temperature around the substrate to the processing surface. The substrate liquid processing apparatus according to claim 1 or 2, wherein Further equipped with a heater that emits heat, The liquid treatment is performed in a state where the treatment liquid on the treatment surface is heated by heat generated from the heater. A substrate liquid processing method for performing liquid processing on a processing surface of a substrate by a processing liquid, the substrate liquid processing method characterized by comprising: a process of forming a liquid pool (Puddle) of the treatment liquid on the treatment surface by supplying the treatment liquid to the treatment surface of the substrate held by the substrate holding portion; and a process of performing the liquid treatment in a state in which the liquid pool of the treatment liquid is formed on the treatment surface. After the liquid pool of the treatment liquid is formed on the treatment surface and before the liquid treatment is started, and after the liquid treatment is completed, at least the liquid treatment is detected, and the temperature detection sensor is detected. The temperature of the above treatment liquid on the treatment surface. A recording medium in which a program is recorded and the program is executed by a computer for controlling the operation of the substrate liquid processing, wherein the computer controls the substrate liquid processing device to execute the substrate liquid processing method described in claim 10 .